TW202221808A - Method of manufacturing conductive line structure - Google Patents

Abstract

A method of manufacturing a conductive line structure including the following steps is provided. A sacrificial layer is formed on the conductive layer. The sacrificial layer has a first opening. The first opening includes a first opening portion and a second opening portion connected to each other. The width of the second opening portion is smaller than the width of the first opening portion. A spacer material layer is conformally formed on the sacrificial layer. The adjacent portions of the spacer material layer located on the sidewall of the second opening portion are merged together. An etching back process is performed on the spacer material layer to form a spacer on the sidewalls of the first opening. The first spacer portion of the spacer is located on the sidewall of the first opening portion. The second spacer portion of the spacer is located in the second opening portion. The width of the second spacer portion is greater than the width of the first spacer portion. The sacrificial layer is removed. A portion of the pattern of the spacer is transferred to the conductive layer to form a conductive line structure.

Description

Manufacturing method of wire structure

The present invention relates to a method of manufacturing a semiconductor element, and more particularly, to a method of manufacturing a wire structure.

With the advancement of semiconductor technology, the size of components is also constantly shrinking. As the integration of integrated circuits increases, the critical dimension (CD) of the conductors and the distance between conductors shrink with it.

When the critical dimension of the wire is reduced, the critical dimension of the subsequently formed contact window will be larger than the critical dimension of the wire. As a result, in the process of forming the contact window on the wire, the opening of the contact window for forming the contact window may pass through the wire, thereby causing damage to the wire.

In addition, in the etching process used to form the wires, the etch loading effect causes the width of the ends of the wires to become larger. Therefore, when the distance between the wires is reduced, the ends of two adjacent wires are likely to be short-circuited.

The present invention provides a method for manufacturing a wire structure, which can prevent the opening of a subsequently formed contact window from passing through the wire, and can prevent short circuits at the ends of two adjacent wires.

The present invention provides a method for manufacturing a wire structure, which includes the following steps. A conductor layer is formed on the substrate. A sacrificial layer is formed on the conductor layer. The sacrificial layer has a first opening. The first opening includes a first opening portion and a second opening portion. The second opening is connected to one end of the first opening. The width of the second opening is smaller than the width of the first opening. A layer of spacer material is conformally formed on the sacrificial layer. Adjacent portions of the spacer material layer on the sidewall of the second opening are merged together. The spacer material layer is etched back to form a spacer on the sidewall of the first opening. The spacer includes a first spacer portion and a second spacer portion. The first spacer portion is on the side wall of the first opening. The second spacer portion is in the second opening portion and is connected to the first spacer portion. The width of the second spacer portion is greater than the width of the first spacer portion. Remove the sacrificial layer. Part of the spacer pattern is transferred to the conductor layer to form a wire structure. The wire structure includes a plurality of wires. The shape of each wire includes a first wire portion and a second wire portion that are connected to each other. The shape of the first wire portion corresponds to that of a portion of the first spacer portion. The shape of the second wire portion corresponds to the shape of the second spacer portion.

According to an embodiment of the present invention, in the manufacturing method of the wire structure, the second spacer portion can fill the second opening portion.

According to an embodiment of the present invention, in the above-mentioned manufacturing method of the wire structure, the method for forming the sacrificial layer may include the following steps. A sacrificial material layer is formed on the conductor layer. A patterned photoresist layer is formed on the sacrificial material layer. The patterned photoresist layer has a second opening. The second opening includes a third opening portion and a fourth opening portion. The shape of the first opening corresponds to the shape of the third opening. The fourth opening is connected to one end of the third opening. The shape of the second opening corresponds to the shape of the fourth opening. The width of the fourth opening is smaller than the width of the third opening. The pattern of the patterned photoresist layer is transferred to the sacrificial material layer.

According to an embodiment of the present invention, in the above-mentioned manufacturing method of the wire structure, the method for transferring part of the pattern of the spacer to the conductor layer may include the following steps. A hard mask layer is formed on the conductor layer prior to forming the sacrificial material layer. A layer of sacrificial material is formed on the hard mask layer. After removing the sacrificial layer, the pattern of the spacers is transferred to the hard mask layer to form a first patterned hard mask layer. The first patterned hard mask layer may include a first hard mask portion and a second hard mask portion. The shape of the first hard mask curtain portion corresponds to the shape of the first spacer portion. The second hard mask curtain portion is connected to the first hard mask curtain portion. The shape of the second hard mask portion corresponds to the shape of the second spacer portion. The width of the second hard mask curtain portion may be greater than the width of the first hard mask curtain portion. Part of the first hard mask portion is removed to form a second patterned hard mask layer. The second patterned hardmask layer may include the remaining first hardmask portion and the second hardmask portion. The pattern of the second patterned hard mask layer is transferred to the conductor layer.

According to an embodiment of the present invention, in the above-mentioned manufacturing method of the wire structure, the method for transferring part of the pattern of the spacer to the conductor layer may include the following steps. Part of the first spacer portion is removed to form a spacer structure. The spacer structure may include the remaining first spacer portion and the second spacer portion. The pattern of the spacer structure is transferred to the conductor layer.

According to an embodiment of the present invention, in the above-mentioned manufacturing method of the wire structure, the method for transferring part of the pattern of the spacers to the conductor layer may further include the following steps. A hard mask layer is formed on the conductor layer prior to forming the sacrificial material layer. A layer of sacrificial material is formed on the hard mask layer. After the spacer structure is formed, the pattern of the spacer structure is sequentially transferred to the hard mask layer and the conductor layer.

According to an embodiment of the present invention, in the above-mentioned manufacturing method of the wire structure, the formation method of the spacer material layer is, for example, molecular layer deposition (MLD).

According to an embodiment of the present invention, in the above-mentioned manufacturing method of the wire structure, the thickness of the spacer material layer may be greater than or equal to half of the width of the second opening.

According to an embodiment of the present invention, in the above-mentioned manufacturing method of the wire structure, the width of the second wire portion may be greater than the width of the first wire portion.

According to an embodiment of the present invention, in the above-mentioned manufacturing method of the wire structure, the distance between two adjacent second wire portions may be greater than the distance between two adjacent first wire portions.

Based on the above, in the manufacturing method of the wire structure proposed by the present invention, the adjacent parts of the spacer material layer on the side wall of the second opening are merged together, so that the second spacer portion of the subsequently formed spacer is formed. The width of the spacer is greater than the width of the first spacer portion of the spacer. In this way, in the wires formed after transferring part of the spacer pattern to the conductor layer, the shape of the first wire portion corresponds to the shape of part of the first spacer portion, and the shape of the second wire portion corresponds to the shape of the second wire portion. The shape of the spacer portion allows the second wire portion to have a larger width. Since the second wire portion has a larger width, the second wire portion can serve as a pad portion for connecting to the contact window, and can prevent the opening of the contact window from passing through the wire.

In addition, since the width of the second opening in the sacrificial layer is smaller than the width of the first opening in the sacrificial layer, two adjacent second conductive lines located at the ends of two adjacent conductive lines can have larger widths. distance, thereby preventing short circuits at the ends of two adjacent wires.

In addition, the manufacturing method of the wire structure proposed by the present invention can form the spacers by a self-alignment double patterning (SADP) process, and compared with the traditional SADP process, no additional steps are added .

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

1A to 1H are perspective views illustrating a manufacturing process of a wire structure according to an embodiment of the present invention. FIG. 2 is a top view of the wire structure in FIG. 1H .

Referring to FIG. 1A , a dielectric layer 102 may be formed on the substrate 100 , and a dielectric layer 104 may be formed on the dielectric layer 102 , but the present invention is not limited thereto. In other embodiments, the dielectric layer 102 and/or the dielectric layer 104 may also be omitted. The substrate 100 may be a semiconductor substrate, such as a silicon substrate. The material of the dielectric layer 102 is, for example, silicon oxide. The method for forming the dielectric layer 102 is, for example, chemical vapor deposition (CVD). The material of the dielectric layer 104 is, for example, silicon nitride. The method of forming the dielectric layer 104 is, for example, CVD.

Then, the conductor layer 106 is formed on the substrate 100 . In this embodiment, the conductor layer 106 is formed on the dielectric layer 104 as an example for description, but the present invention is not limited thereto. The material of the conductor layer 106 may be a conductor material such as metal (eg, tungsten). The formation method of the conductor layer 106 is, for example, physical vapor deposition (PVD).

Next, a dielectric layer 108 , a dielectric layer 110 , a hard mask layer 112 , a hard mask layer 114 and a hard mask layer 116 may be sequentially formed on the conductor layer 106 , but the invention is not limited thereto. In other embodiments, the dielectric layer 110, the hard mask layer 112, the hard mask layer 114, and/or the hard mask layer 116 may be omitted. In other embodiments, other mask layers may be formed on the hard mask layer 116 . The material of the dielectric layer 108 is, for example, silicon nitride. The method of forming the dielectric layer 108 is, for example, CVD. The material of the dielectric layer 110 is, for example, silicon oxide. The formation method of the dielectric layer 110 is, for example, CVD. The material of the hard mask layer 112 is, for example, amorphous carbon. The formation method of the hard mask layer 112 is, for example, CVD. The material of the hard mask layer 114 is, for example, plasma silicon nitride (P-SiN). The formation method of the hard mask layer 114 is, for example, plasma-enhanced chemical vapor deposition (PECVD). The material of the hard mask layer 116 is, for example, amorphous silicon. The formation method of the hard mask layer 116 is, for example, CVD.

Afterwards, a sacrificial material layer 118 may be formed on the conductor layer 106 , and a sacrificial material layer 120 may be formed on the sacrificial material layer 118 . In this embodiment, the sacrificial material layer 118 is formed on the hard mask layer 116 as an example for description, but the invention is not limited thereto. The material of the sacrificial material layer 118 is, for example, bottom anti-reflective coating (BARC). The formation method of the sacrificial material layer 118 is, for example, a spin coating method. The material of the sacrificial material layer 120 is, for example, a silicon-containing bottom anti-reflection coating (Si-BARC). The formation method of the sacrificial material layer 120 is, for example, a spin coating method.

Subsequently, a patterned photoresist layer 122 may be formed on the sacrificial material layer 120 . The patterned photoresist layer 122 has openings OP1. The opening OP1 includes an opening portion OP1-1 and an opening portion OP1-2. The opening OP1-2 is connected to one end of the opening OP1-1. The width W2 of the opening OP1-2 is smaller than the width W1 of the opening OP1-1. In addition, the opening OP1 may further include an opening portion OP1-3. The opening part OP1-3 is connected to the other end of the opening part OP1-1. The width W3 of the opening portion OP1-3 may be smaller than the width W1 of the opening portion OP1-1. In this embodiment, the width W3 of the opening portion OP1-3 may be equal to the width W2 of the opening portion OP1-2, but the present invention is not limited thereto. The patterned photoresist layer 122 can be formed by a lithography process.

Referring to FIG. 1B , the pattern of the patterned photoresist layer 122 is transferred to the sacrificial material layer 118 , and a sacrificial layer 118 a is formed on the conductor layer 106 . In this embodiment, the sacrificial layer 118a is formed on the hard mask layer 116 as an example, but the present invention is not limited thereto.

For example, the formation method of the sacrificial layer 118a may include the following steps. First, using the patterned photoresist layer 122 as a mask, part of the sacrificial material layer 120 is removed to expose the sacrificial material layer 118 . Thereby, the pattern of the patterned photoresist layer 122 can be transferred to the sacrificial material layer 120 . A method for removing part of the sacrificial material layer 120 is, for example, a dry etching method. Next, using the patterned photoresist layer 122 and the sacrificial material layer 120 as a mask, part of the sacrificial material layer 118 is removed to form a sacrificial layer 118a. In this embodiment, in the etching process for removing part of the sacrificial material layer 118 , the patterned photoresist layer 122 and the sacrificial material layer 118 are removed at the same time because the etching process has similar etching rates to the patterned photoresist layer 122 and the sacrificial material layer 118 . . In addition, in the etching process for removing part of the sacrificial material layer 118 , since the patterned photoresist layer 122 has been transferred to the sacrificial material layer 120 , and the etching rate of the etching process for the sacrificial material layer 120 is lower than that for the sacrificial material layer 118 Therefore, after the patterned photoresist layer 122 is removed, the pattern of the sacrificial material layer 120 can be transferred to the sacrificial material layer 118 by using the sacrificial material layer 120 as an etching mask. A method for removing part of the sacrificial material layer 118 is, for example, a dry etching method. Additionally, after the sacrificial layer 118a is formed, the sacrificial material layer 120 may be removed. The removal method of the sacrificial material layer 120 is, for example, a dry etching method.

The sacrificial layer 118a has an opening OP2. The opening OP2 includes an opening portion OP2-1 and an opening portion OP2-2. The shape of the opening portion OP2-1 corresponds to the shape of the opening portion OP1-1. The opening OP2-2 is connected to one end of the opening OP2-1. The shape of the opening portion OP2-2 corresponds to the shape of the opening portion OP1-2. The width W5 of the opening OP2-2 is smaller than the width W4 of the opening OP2-1. In addition, the opening OP2 may further include an opening portion OP2-3. The opening part OP2-3 is connected to the other end of the opening part OP2-1. The shape of the opening portion OP2-3 corresponds to the shape of the opening portion OP1-3. The width W6 of the opening portion OP2-3 may be smaller than the width W4 of the opening portion OP2-1. In this embodiment, the width W6 of the opening portion OP2-3 may be equal to the width W5 of the opening portion OP2-2, but the present invention is not limited thereto.

Referring to FIG. 1C, a spacer material layer 126 is conformally formed on the sacrificial layer 118a. Adjacent portions of the spacer material layer 126 located on the sidewalls of the opening portion OP2-2 are merged together. For example, the thickness T1 of the spacer material layer 126 may be greater than or equal to one-half of the width W5 of the opening portion OP2-2, so that the spacer material layer 126 can be located on the sidewall of the opening portion OP2-2. Adjacent parts are merged together. In addition, adjacent portions of the spacer material layer 126 located on the sidewalls of the opening portion OP2-3 are merged together. For example, the thickness T1 of the spacer material layer 126 may be greater than or equal to half of the width W6 of the opening OP2-3, thereby enabling the spacer material layer 126 to be located on the sidewall of the opening OP2-3. Adjacent parts are merged together. The material of the spacer material layer 126 is, for example, silicon oxide. The formation method of the spacer material layer 126 is, for example, molecular layer deposition (MLD).

Referring to FIG. 1D , an etch-back process is performed on the spacer material layer 126 to form a spacer 126 a on the sidewall of the opening OP2 . The spacer 126a includes a spacer portion 126a-1 and a spacer portion 126a-2. The spacer portion 126a-1 is located on the side wall of the opening portion OP2-1. The spacer portion 126a-1 may be annular, but the invention is not limited thereto. The spacer portion 126a-2 is located in the opening portion OP2-2, and is connected to the spacer portion 126a-1. The width W8 of the spacer portion 126a-2 is larger than the width W7 of the spacer portion 126a-1. The spacer portion 126a-2 may fill the opening portion OP2-2. The spacer portion 126a-2 may be block-shaped. In addition, the spacer 126a may further include a spacer portion 126a-3. The spacer portion 126a-3 is located in the opening portion OP2-3, and is connected to the spacer portion 126a-1. The width W9 of the spacer portion 126a-3 may be greater than the width W7 of the spacer portion 126a-1. The spacer portion 126a-3 may fill the opening portion OP2-3. The spacer portion 126a-3 may be block-shaped.

Referring to FIG. 1E, the sacrificial layer 118a is removed. When the material of the sacrificial layer 118a is BARC, the removal method of the sacrificial layer 118a is, for example, an ashing method.

In this embodiment, although the spacer 126a is formed by the above method, the present invention is not limited thereto. In other embodiments, the sacrificial material layer 118 and the sacrificial material layer 120 may be omitted, and the patterned photoresist layer 122 may be used as the sacrificial layer. In the case where the sacrificial material layer 118 and the sacrificial material layer 120 are omitted, and the patterned photoresist layer 122 is used as the sacrificial layer, the method for forming the spacer 126a may include the following steps. A spacer material layer 126 is conformally formed on the patterned photoresist layer 122 , and the spacer material layer 126 is etched back to form a spacer 126 a on the sidewall of the opening OP1 of the patterned photoresist layer 122 . In addition, after the spacers 126a are formed, the patterned photoresist layer 122, which is a sacrificial layer, may be removed.

Referring to FIG. 1F , the pattern of the spacers 126 a may be transferred to the hard mask layer 116 to form a patterned hard mask layer 116 a. The patterned hardmask layer 116a may include a hardmask portion 116a-1 and a hardmask portion 116a-2. The shape of the hard mask portion 116a-1 corresponds to the shape of the spacer portion 126a-1. The hard mask curtain portion 116a-2 is connected to the hard mask curtain portion 116a-1. The shape of the hard mask portion 116a-2 corresponds to the shape of the spacer portion 126a-2. The width W11 of the hard mask curtain portion 116a-2 may be greater than the width W10 of the hard mask curtain portion 116a-1. In addition, the patterned hard mask layer 116a may further include a hard mask portion 116a-3. The hard mask curtain portion 116a-3 is connected to the hard mask curtain portion 116a-1. The shape of the hard mask portion 116a-3 corresponds to the shape of the spacer portion 126a-3. The width W12 of the hard mask curtain portion 116a-3 may be greater than the width W10 of the hard mask curtain portion 116a-1.

Next, the spacer 126a may be removed. The removal method of the spacer 126a is, for example, a wet etching method.

Referring to FIG. 1G, part of the hard mask portion 116a-1 can be removed to form a patterned hard mask layer 116b. The patterned hardmask layer 116b may include the remaining hardmask portion 116a-1, hardmask portion 116a-2, and hardmask portion 116a-3. For example, a portion of the hard mask portion 116a-1 may be removed by a lithography process and an etching process (eg, a dry etching process). The pattern of the patterned hard mask layer 116b may be used to determine the pattern of the conductor structures 106a (FIGS. 1H and 2) to be formed. In addition, the pattern of the patterned hard mask layer 116b is not limited to the pattern in FIG. 1G , and the pattern of the conductor structure 106a (FIG. 1H and FIG. 2) to be formed can be adjusted by adjusting the removed portion of the hard mask portion 116a-1. pattern. In other embodiments, the pattern of the conductor structure 106a (FIG. 1H and FIG. 2) to be formed may be adjusted by removing part of the hard mask portion 116a-2 and/or the hard mask portion 116a-3.

1H, the pattern of the patterned hard mask layer 116b can be sequentially transferred to the hard mask layer 114, the hard mask layer 112, the dielectric layer 110, the dielectric layer 108, the conductor layer 106 and part of the dielectric layer 104. Thereby, part of the pattern of the spacers 126a can be transferred to the conductor layer 106 to form the wire structure 106a. The above-mentioned pattern transfer process can be performed by an etching process (eg, a dry etching process). The patterned hard mask layer 116b and the hard mask layer 114 may be removed in the pattern transfer process described above. In addition, after the above-mentioned pattern transfer process, the hard mask layer 112 can be removed. When the material of the hard mask layer 112 is amorphous carbon, the removal method of the hard mask layer 112 is, for example, an ashing method.

Please refer to FIG. 1H and FIG. 2 , the wire structure 106a includes a plurality of wires 106b. The wire structure 106a may be a wire structure of a semiconductor device. For example, the wire structure 106a can be used as a bit line structure of dynamic random access memory (DRAM). The shape of each lead wire 106b includes a lead wire portion 106b-1 and a lead wire portion 106b-2 that are connected to each other. The shape of the lead portion 106b-1 corresponds to the shape of the partial spacer portion 126a-1 in FIG. 1E. The shape of the partial wire portion 106b-2 corresponds to the shape of the spacer portion 126a-2 in FIG. 1E. Further, the shape of the partial wire portion 106b-2 corresponds to the shape of the spacer portion 126a-3 in FIG. 1E. The width W14 of the wire portion 106b-2 may be greater than the width W13 of the wire portion 106b-1. The distance D1 between the two adjacent wire portions 106b-2 may be greater than the distance D2 between the two adjacent wire portions 106b-1.

In the present embodiment, although the method for transferring part of the pattern of the spacer 126a to the conductor layer 106 is the above-mentioned method as an example, the present invention is not limited thereto. For example, in other embodiments, the hard mask layer 114 and the hard mask layer 112 can be omitted, and the pattern of the patterned hard mask layer 116b can be sequentially transferred to the dielectric layer 110, the dielectric layer 108, the The conductor layer 106 and part of the dielectric layer 104 .

Based on the above embodiments, in the method for manufacturing the wire structure 106a, the adjacent portions of the spacer material layer 126 located on the sidewall of the opening portion OP2-2 are merged together, so that the spacer portion of the spacer 126a formed subsequently is formed. The width W8 of 126a-2 is greater than the width W7 of the spacer portion 126a-1 of the spacer 126a. In this way, in the wire 106b formed by transferring the pattern of part of the spacer 126a to the conductor layer 106, the shape of the wire part 106b-1 corresponds to the shape of the part of the spacer part 126a-1, and the wire part 106b-2 The shape corresponds to the shape of the spacer portion 126a-2, so that the wire portion 106b-2 may have a larger width. Since the wire portion 106b-2 has a larger width, the wire portion 106b-2 can serve as a pad portion for connecting to the contact window, and can prevent the contact window opening from passing through the wire 106b. On the other hand, in the case where the opening OP2 includes the opening portion OP2-3, the adjacent portions of the spacer material layer 126 located on the side wall of the opening portion OP2-3 are merged together, so that the gap between the spacers 126a formed subsequently is formed. The width W9 of the wall portion 126a-3 may be greater than the width W7 of the spacer portion 126a-1 of the spacer 126a. In this way, since the shape of the lead portion 106b-2 corresponds to the shape of the spacer portion 126a-3, the lead portion 106b-2 can have a larger width, so the lead portion 106b-2 can be used as a pad portion, and The contact window openings can be prevented from passing through the wires 106b.

In addition, since the width W5 of the opening OP2-2 in the sacrificial layer 118a is smaller than the width W4 of the opening OP2-1 in the sacrificial layer 118a, two adjacent wires located at the ends of the two adjacent wires 106b can be made The portion 106b-2 has a larger distance, so as to prevent a short circuit between the ends of the adjacent two wires 106b. On the other hand, in the case where the opening OP2 includes the opening OP2-3, since the width W6 of the opening OP2-3 in the sacrificial layer 118a is smaller than the width W4 of the opening OP2-1 in the sacrificial layer 118a, it is possible to make The distance between the two adjacent wire portions 106b-2 located at the ends of the two adjacent wires 106b is relatively large, thereby preventing a short circuit at the ends of the adjacent two wires 106b.

In addition, the manufacturing method of the wire structure 106a can form the spacers 126a through the SADP process, and compared with the conventional SADP process, no additional steps are added.

In this embodiment, although the manufacturing method of the wire structure 106a is described by taking the above method as an example, the present invention is not limited thereto.

Hereinafter, a method for manufacturing the wire structure 106a according to another embodiment of the present invention will be described with reference to FIGS. 3A to 3B . 3A to 3B are perspective views of a manufacturing process of a wire structure according to another embodiment of the present invention. 3A to 3B are cross-sectional views of the manufacturing process following the steps of FIG. 1E .

Please refer to FIGS. 1A to 1H and FIGS. 3A to 3B . The differences between the embodiments of FIGS. 3A to 3B and FIGS. 1A to 1H are as follows.

In the embodiment of FIGS. 1A to 1H , part of the hard mask portion 116a-1 is removed to form a patterned hard mask layer 116b (FIG. 1G), and then the pattern of the patterned hard mask layer 116b is sequentially transferred to hard mask layer 114, hard mask layer 112, dielectric layer 110, dielectric layer 108, conductor layer 106, and part of dielectric layer 104 (FIG. 1H). That is, in the embodiment of FIGS. 1A to 1H , the pattern of the conductor structure 106 a ( FIGS. 1H and 2 ) to be formed is determined by patterning the pattern of the hard mask layer 116 b.

However, in the embodiment of FIGS. 3A-3B, after removing the sacrificial layer 118a (FIG. 1E), a portion of the spacer portion 126a-1 is removed to form a spacer structure 126b (FIG. 3A). The spacer structure 126b may include the remaining spacer portion 126a-1, the spacer portion 126a-2, and the spacer portion 126a-3. For example, a portion of the spacer portion 126a-1 may be removed by a lithography process and an etching process (eg, a dry etching process). Next, the pattern of the spacer structure 126b can be sequentially transferred to the hard mask layer 116, the hard mask layer 114, the hard mask layer 112, the dielectric layer 110, the dielectric layer 108, the conductor layer 106 and part of the dielectric layer 104 (FIG. 3B). That is, in the embodiment of FIGS. 3A to 3B , the pattern of the wire structure 106 a ( FIG. 3B and FIG. 2 ) to be formed is determined by the pattern of the spacer structure 126 b.

In addition, the pattern of the spacer structure 126b is not limited to the pattern of FIG. 3A, and the pattern of the wire structure 106a to be formed can be adjusted by adjusting the removed portion of the spacer portion 126a-1. In other embodiments, the pattern of the wire structure 106a to be formed can be adjusted by removing part of the spacer portion 126a-2 and/or the spacer portion 126a-3.

In addition, in the embodiment of FIGS. 3A-3B, the pattern transfer process may be performed by an etching process (eg, a dry etching process). After transferring the pattern of spacer structures 126b to the hardmask layer 116, the spacer structures 126b may be removed. The removal method of the spacer structure 126b is, for example, a wet etching method. In addition, the hard mask layer 116 and the hard mask layer 114 may be removed during the pattern transfer process described above. In addition, after the above-mentioned pattern transfer process, the hard mask layer 112 can be removed. When the material of the hard mask layer 112 is amorphous carbon, the removal method of the hard mask layer 112 is, for example, an ashing method.

On the other hand, in the embodiments of FIGS. 1A to 1H and the embodiments of FIGS. 3A to 3B , the same or similar components are denoted by the same symbols and have the same or similar functions, and their descriptions are omitted here.

To sum up, the manufacturing method of the wire structure of the above-mentioned embodiment can prevent the opening of the contact window from passing through the wire, and can prevent the ends of two adjacent wires from being short-circuited. In addition, and compared with the traditional SADP process, the manufacturing method of the wire structure of the above-mentioned embodiment does not add additional steps.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the appended patent application.

100: base 102, 104, 108, 110: Dielectric layers 106: Conductor layer 106a: Wire Construction 106b: Wire 106b-1, 106b-2: Lead wire part 112, 114, 116: Hard mask layer 116a, 116b: Patterned hard mask layer 116a-1, 116a-2, 116a-3: Hard Cover Curtain Section 118, 120: sacrificial material layer 118a: sacrificial layer 122: Patterned photoresist layer 126: Spacer material layer 126a: Spacer 126b: Spacer structure 126a-1, 126a-2, 126a-3: Spacer part D1, D2: Distance OP1, OP2: Opening OP1-1, OP1-2, OP1-3, OP2-1, OP2-2, OP2-3: Opening T1: Thickness W1~W14: Width

1A to 1H are perspective views illustrating a manufacturing process of a wire structure according to an embodiment of the present invention. FIG. 2 is a top view of the wire structure in FIG. 1H . 3A to 3B are perspective views of a manufacturing process of a wire structure according to another embodiment of the present invention.

106a: Wire Construction

106b: Wire

106b-1, 106b-2: Lead wire part

D1, D2: distance

W13,W14: Width

Claims (10)

A manufacturing method of a wire structure, comprising: forming a conductor layer on the substrate; A sacrificial layer is formed on the conductor layer, wherein the sacrificial layer has a first opening, wherein the first opening includes: a first opening; and a second opening connected to one end of the first opening, wherein the width of the second opening is smaller than the width of the first opening; Conformally forming a spacer material layer on the sacrificial layer, wherein adjacent portions of the spacer material layer on the sidewall of the second opening are merged together; The spacer material layer is etched back to form a spacer on the sidewall of the first opening, wherein the spacer includes: a first spacer portion located on the side wall of the first opening portion; and a second spacer portion located in the second opening portion and connected to the first spacer portion, wherein the width of the second spacer portion is greater than the width of the first spacer portion; removing the sacrificial layer; and Part of the pattern of the spacers is transferred to the conductor layer to form a wire structure, wherein the wire structure includes a plurality of wires, wherein the shape of each of the wires includes a first wire portion and a second wire connected to each other portion, wherein the shape of the first wire portion corresponds to the shape of part of the first spacer portion, and the shape of the second wire portion corresponds to the shape of the second spacer portion. The method of manufacturing a wire structure according to claim 1, wherein the second spacer portion fills the second opening portion. The method for manufacturing a wire structure according to claim 1, wherein the method for forming the sacrificial layer comprises: forming a sacrificial material layer on the conductor layer; A patterned photoresist layer is formed on the sacrificial material layer, wherein the patterned photoresist layer has a second opening, wherein the second opening includes: a third opening, wherein the shape of the first opening corresponds to the shape of the third opening; and a fourth opening connected to one end of the third opening, wherein the shape of the second opening corresponds to the shape of the fourth opening, and the width of the fourth opening is smaller than that of the third opening the width of the opening; and The pattern of the patterned photoresist layer is transferred to the sacrificial material layer. The method for manufacturing a wire structure according to claim 3, wherein the method for transferring part of the pattern of the spacer to the conductor layer comprises: before forming the sacrificial material layer, forming a hard mask layer on the conductor layer, wherein the sacrificial material layer is formed on the hard mask layer; After removing the sacrificial layer, the pattern of the spacers is transferred to the hard mask layer to form a first patterned hard mask layer, wherein the first patterned hard mask layer includes: a first hard mask curtain portion, wherein the shape of the first hard mask curtain portion corresponds to the shape of the first spacer portion; and The second hard mask curtain part is connected to the first hard mask curtain part, wherein the shape of the second hard mask curtain part corresponds to the shape of the second spacer wall part, and the second hard mask curtain part The width is greater than the width of the first hard mask portion; Part of the first hard mask portion is removed to form a second patterned hard mask layer, wherein the second patterned hard mask layer includes the remaining first hard mask portion and the second hard mask hard mask section; and The pattern of the second patterned hard mask layer is transferred to the conductor layer. The method for manufacturing a wire structure according to claim 3, wherein the method for transferring part of the pattern of the spacer to the conductor layer comprises: removing part of the first spacer portion to form a spacer structure, wherein the spacer structure includes the remaining first spacer portion and the second spacer portion; and The pattern of the spacer structure is transferred to the conductor layer. The method for manufacturing a wire structure according to claim 5, wherein the method for transferring part of the pattern of the spacer to the conductor layer further comprises: forming a hard mask layer on the conductor layer prior to forming the sacrificial material layer, wherein the sacrificial material layer is formed on the hard mask layer; and After the spacer structure is formed, the pattern of the spacer structure is sequentially transferred to the hard mask layer and the conductor layer. The method for manufacturing a wire structure according to claim 1, wherein the method for forming the spacer material layer includes a molecular layer deposition method. The method for manufacturing a wire structure according to claim 1, wherein the thickness of the spacer material layer is greater than or equal to half of the width of the second opening. The method for manufacturing a wire structure according to claim 1, wherein the width of the second wire portion is greater than the width of the first wire portion. The method for manufacturing a wire structure according to claim 1, wherein a distance between two adjacent second wire parts is greater than a distance between two adjacent first wire parts.

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