TWI749911B - Method of manufacturing conductive line structure - Google Patents

Abstract

A method of manufacturing a conductive line structure including the following steps is provided. A sacrificial layer is formed on the conductive layer. The sacrificial layer has a first opening. The first opening includes a first opening portion and a second opening portion connected to each other. The width of the second opening portion is smaller than the width of the first opening portion. A spacer material layer is conformally formed on the sacrificial layer. The adjacent portions of the spacer material layer located on the sidewall of the second opening portion are merged together. An etching back process is performed on the spacer material layer to form a spacer on the sidewalls of the first opening. The first spacer portion of the spacer is located on the sidewall of the first opening portion. The second spacer portion of the spacer is located in the second opening portion. The width of the second spacer portion is greater than the width of the first spacer portion. The sacrificial layer is removed. A portion of the pattern of the spacer is transferred to the conductive layer to form a conductive line structure.

Description

Manufacturing method of wire structure

The present invention relates to a method of manufacturing a semiconductor element, and more particularly to a method of manufacturing a wire structure.

With the advancement of semiconductor technology, the size of components is also continuously shrinking. When the integration degree of the integrated circuit increases, the critical dimension (CD) of the wire and the distance between the wire and the wire will decrease.

When the critical size of the wire is reduced, the critical size of the subsequently formed contact window will be larger than the critical size of the wire. As a result, in the process of forming the contact window on the wire, the opening of the contact window used to form the contact window may pass through the wire and cause damage to the wire.

In addition, in the etching process used to form the wires, the etch loading effect will cause the width of the wire ends to become larger. Therefore, when the distance between the wire and the wire is reduced, the ends of two adjacent wires are likely to be short-circuited.

The present invention provides a method for manufacturing a wire structure, which can prevent the subsequently formed contact window opening from passing through the wire, and can prevent the ends of two adjacent wires from being short-circuited.

The present invention provides a method for manufacturing a wire structure, which includes the following steps. A conductor layer is formed on the substrate. A sacrificial layer is formed on the conductor layer. The sacrificial layer has a first opening. The first opening includes a first opening and a second opening. The second opening is connected to one end of the first opening. The width of the second opening is smaller than the width of the first opening. A spacer material layer is conformally formed on the sacrificial layer. The adjacent parts of the spacer material layer located on the side wall of the second opening are merged together. An etch-back process is performed on the spacer material layer, and spacers are formed on the sidewalls of the first opening. The gap wall includes a first gap wall portion and a second gap wall portion. The first spacer portion is on the side wall of the first opening. The second gap wall portion is in the second opening portion and connected to the first gap wall portion. The width of the second gap wall portion is greater than the width of the first gap wall portion. Remove the sacrificial layer. The pattern of part of the spacer is transferred to the conductor layer to form a wire structure. The wire structure includes a plurality of wires. The shape of each wire includes a first wire portion and a second wire portion connected to each other. The shape of the first wire portion corresponds to the shape of a part of the first spacer portion. The shape of the second wire portion corresponds to the shape of the second spacer portion.

According to an embodiment of the present invention, in the manufacturing method of the wire structure described above, the second gap wall portion can fill the second opening portion.

According to an embodiment of the present invention, in the method for manufacturing the wire structure described above, the method for forming the sacrificial layer may include the following steps. A sacrificial material layer is formed on the conductor layer. A patterned photoresist layer is formed on the sacrificial material layer. The patterned photoresist layer has a second opening. The second opening includes a third opening and a fourth opening. The shape of the first opening corresponds to the shape of the third opening. The fourth opening is connected to one end of the third opening. The shape of the second opening corresponds to the shape of the fourth opening. The width of the fourth opening is smaller than the width of the third opening. The pattern of the patterned photoresist layer is transferred to the sacrificial material layer.

According to an embodiment of the present invention, in the above-mentioned method of manufacturing the wire structure, the method of transferring a part of the spacer pattern to the conductor layer may include the following steps. Before forming the sacrificial material layer, a hard mask layer is formed on the conductor layer. The sacrificial material layer is formed on the hard mask layer. After the sacrificial layer is removed, the pattern of the spacer is transferred to the hard mask layer to form a first patterned hard mask layer. The first patterned hard mask layer may include a first hard mask portion and a second hard mask portion. The shape of the first hard mask portion corresponds to the shape of the first spacer portion. The second hard screen part is connected to the first hard screen part. The shape of the second hard mask portion corresponds to the shape of the second gap wall portion. The width of the second hard mask portion may be greater than the width of the first hard mask portion. A part of the first hard mask portion is removed to form a second patterned hard mask layer. The second patterned hard mask layer may include the remaining first hard mask portion and the second hard mask portion. The pattern of the second patterned hard mask layer is transferred to the conductor layer.

According to an embodiment of the present invention, in the above-mentioned method of manufacturing the wire structure, the method of transferring a part of the spacer pattern to the conductor layer may include the following steps. A part of the first gap wall portion is removed to form a gap wall structure. The gap wall structure may include the remaining first gap wall portion and the second gap wall portion. The pattern of the spacer structure is transferred to the conductor layer.

According to an embodiment of the present invention, in the above-mentioned method for manufacturing the wire structure, the method of transferring a part of the spacer pattern to the conductor layer may further include the following steps. Before forming the sacrificial material layer, a hard mask layer is formed on the conductor layer. The sacrificial material layer is formed on the hard mask layer. After the spacer structure is formed, the pattern of the spacer structure is sequentially transferred to the hard mask layer and the conductor layer.

According to an embodiment of the present invention, in the above-mentioned method for manufacturing the wire structure, the method for forming the spacer material layer is, for example, molecular layer deposition (MLD).

According to an embodiment of the present invention, in the above-mentioned method for manufacturing the wire structure, the thickness of the spacer material layer may be greater than or equal to one-half of the width of the second opening.

According to an embodiment of the present invention, in the manufacturing method of the above-mentioned wire structure, the width of the second wire portion may be greater than the width of the first wire portion.

According to an embodiment of the present invention, in the manufacturing method of the wire structure described above, the distance between two adjacent second wire portions may be greater than the distance between two adjacent first wire portions.

Based on the above, in the manufacturing method of the wire structure proposed by the present invention, the adjacent parts of the spacer material layer located on the side wall of the second opening part are merged together, so that the second spacer part of the spacer formed subsequently The width of is greater than the width of the first gap wall portion of the gap wall. In this way, in the wire formed after the pattern of part of the spacer is transferred to the conductor layer, the shape of the first wire part corresponds to the shape of the part of the first spacer part, and the shape of the second wire part corresponds to the second The shape of the spacer part allows the second wire part to have a larger width. Since the second wire portion has a larger width, the second wire portion can be used as a pad portion for connecting to the contact window, and can prevent the opening of the contact window from passing through the wire.

In addition, since the width of the second opening in the sacrificial layer is smaller than the width of the first opening in the sacrificial layer, two adjacent second wire portions located at the ends of two adjacent wires can have a larger The distance, in turn, prevents short circuits at the ends of two adjacent wires.

In addition, the manufacturing method of the wire structure proposed by the present invention can form spacers by a self-alignment double patterning (SADP) process, and compared with the traditional SADP process, no additional steps are added. .

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

1A to 1H are perspective views of a manufacturing process of a wire structure according to an embodiment of the present invention. Fig. 2 is a top view of the wire structure in Fig. 1H.

1A, the dielectric layer 102 may be formed on the substrate 100, and the dielectric layer 104 may be formed on the dielectric layer 102, but the present invention is not limited to this. In other embodiments, the dielectric layer 102 and/or the dielectric layer 104 can also be omitted. The substrate 100 may be a semiconductor substrate, such as a silicon substrate. The material of the dielectric layer 102 is silicon oxide, for example. The method for forming the dielectric layer 102 is, for example, chemical vapor deposition (CVD). The material of the dielectric layer 104 is silicon nitride, for example. The method of forming the dielectric layer 104 is, for example, CVD.

Then, a conductor layer 106 is formed on the substrate 100. In this embodiment, the conductive layer 106 is formed on the dielectric layer 104 as an example for description, but the invention is not limited to this. The material of the conductive layer 106 may be a conductive material such as metal (for example, tungsten). The formation method of the conductor layer 106 is, for example, physical vapor deposition (PVD).

Next, a dielectric layer 108, a dielectric layer 110, a hard mask layer 112, a hard mask layer 114, and a hard mask layer 116 may be sequentially formed on the conductor layer 106, but the invention is not limited thereto. In other embodiments, the dielectric layer 110, the hard mask layer 112, the hard mask layer 114, and/or the hard mask layer 116 may be omitted. In other embodiments, other mask layers may be formed on the hard mask layer 116. The material of the dielectric layer 108 is silicon nitride, for example. The method of forming the dielectric layer 108 is, for example, CVD. The material of the dielectric layer 110 is silicon oxide, for example. The method of forming the dielectric layer 110 is, for example, CVD. The material of the hard mask layer 112 is, for example, amorphous carbon. The method of forming the hard mask layer 112 is, for example, CVD. The material of the hard mask layer 114 is, for example, plasma silicon nitride (P-SiN). The formation method of the hard mask layer 114 is, for example, plasma-enhanced chemical vapor deposition (PECVD). The material of the hard mask layer 116 is, for example, amorphous silicon. The formation method of the hard mask layer 116 is, for example, CVD.

After that, a sacrificial material layer 118 may be formed on the conductor layer 106, and a sacrificial material layer 120 may be formed on the sacrificial material layer 118. In this embodiment, the sacrificial material layer 118 is formed on the hard mask layer 116 as an example for description, but the present invention is not limited to this. The material of the sacrificial material layer 118 is, for example, a bottom anti-reflective coating (BARC). The method of forming the sacrificial material layer 118 is, for example, a spin coating method. The material of the sacrificial material layer 120 is, for example, a silicon-containing bottom anti-reflective coating (Si-BARC). The method of forming the sacrificial material layer 120 is, for example, a spin coating method.

Subsequently, a patterned photoresist layer 122 may be formed on the sacrificial material layer 120. The patterned photoresist layer 122 has an opening OP1. The opening OP1 includes an opening OP1-1 and an opening OP1-2. The opening OP1-2 is connected to one end of the opening OP1-1. The width W2 of the opening OP1-2 is smaller than the width W1 of the opening OP1-1. In addition, the opening OP1 may further include an opening OP1-3. The opening OP1-3 is connected to the other end of the opening OP1-1. The width W3 of the opening OP1-3 may be smaller than the width W1 of the opening OP1-1. In this embodiment, the width W3 of the opening OP1-3 may be equal to the width W2 of the opening OP1-2, but the invention is not limited to this. The patterned photoresist layer 122 can be formed by a photolithography process.

1B, the pattern of the patterned photoresist layer 122 is transferred to the sacrificial material layer 118, and the sacrificial layer 118a is formed on the conductor layer 106. In this embodiment, the sacrificial layer 118a is formed on the hard mask layer 116 as an example, but the invention is not limited to this.

For example, the method for forming the sacrificial layer 118a may include the following steps. First, using the patterned photoresist layer 122 as a mask, a part of the sacrificial material layer 120 is removed, and the sacrificial material layer 118 is exposed. Thereby, the pattern of the patterned photoresist layer 122 can be transferred to the sacrificial material layer 120. The method for removing part of the sacrificial material layer 120 is, for example, a dry etching method. Then, using the patterned photoresist layer 122 and the sacrificial material layer 120 as a mask, a part of the sacrificial material layer 118 is removed to form the sacrificial layer 118a. In this embodiment, in the etching process for removing part of the sacrificial material layer 118, since the etching process has similar etching rates to the patterned photoresist layer 122 and the sacrificial material layer 118, the patterned photoresist layer 122 is removed at the same time. . In addition, in the etching process for removing part of the sacrificial material layer 118, since the patterned photoresist layer 122 has been transferred to the sacrificial material layer 120, and the etching process for the sacrificial material layer 120 has a lower etching rate than the sacrificial material layer 118 Therefore, after the patterned photoresist layer 122 is removed, the sacrificial material layer 120 can be used as an etching mask to transfer the pattern of the sacrificial material layer 120 to the sacrificial material layer 118. The method for removing part of the sacrificial material layer 118 is, for example, a dry etching method. In addition, after the sacrificial layer 118a is formed, the sacrificial material layer 120 may be removed. The method for removing the sacrificial material layer 120 is, for example, a dry etching method.

The sacrificial layer 118a has an opening OP2. The opening OP2 includes an opening OP2-1 and an opening OP2-2. The shape of the opening OP2-1 corresponds to the shape of the opening OP1-1. The opening OP2-2 is connected to one end of the opening OP2-1. The shape of the opening OP2-2 corresponds to the shape of the opening OP1-2. The width W5 of the opening OP2-2 is smaller than the width W4 of the opening OP2-1. In addition, the opening OP2 may further include an opening OP2-3. The opening OP2-3 is connected to the other end of the opening OP2-1. The shape of the opening OP2-3 corresponds to the shape of the opening OP1-3. The width W6 of the opening OP2-3 may be smaller than the width W4 of the opening OP2-1. In this embodiment, the width W6 of the opening OP2-3 may be equal to the width W5 of the opening OP2-2, but the invention is not limited to this.

1C, a spacer material layer 126 is conformally formed on the sacrificial layer 118a. The adjacent parts of the spacer material layer 126 located on the side wall of the opening OP2-2 are merged together. For example, the thickness T1 of the spacer material layer 126 can be greater than or equal to one-half of the width W5 of the opening OP2-2, so that the spacer material layer 126 can be positioned on the sidewall of the opening OP2-2. The adjacent parts are merged together. In addition, the adjacent parts of the spacer material layer 126 on the side walls of the opening OP2-3 are merged together. For example, the thickness T1 of the spacer material layer 126 can be greater than or equal to one-half of the width W6 of the opening OP2-3, so that the spacer material layer 126 can be positioned on the sidewall of the opening OP2-3. The adjacent parts are merged together. The material of the spacer material layer 126 is, for example, silicon oxide. The formation method of the spacer material layer 126 is, for example, molecular layer deposition (MLD).

1D, an etch-back process is performed on the spacer material layer 126, and a spacer 126a is formed on the sidewall of the opening OP2. The gap wall 126a includes a gap wall portion 126a-1 and a gap wall portion 126a-2. The spacer 126a-1 is located on the side wall of the opening OP2-1. The gap wall portion 126a-1 may be ring-shaped, but the present invention is not limited to this. The spacer 126a-2 is located in the opening OP2-2, and is connected to the spacer 126a-1. The width W8 of the spacer 126a-2 is greater than the width W7 of the spacer 126a-1. The gap portion 126a-2 can fill the opening OP2-2. The gap wall portion 126a-2 may have a block shape. In addition, the gap wall 126a may further include a gap wall portion 126a-3. The gap wall portion 126a-3 is located in the opening OP2-3, and is connected to the gap wall portion 126a-1. The width W9 of the gap wall portion 126a-3 may be greater than the width W7 of the gap wall portion 126a-1. The gap portion 126a-3 can fill the opening OP2-3. The gap wall portion 126a-3 may be block-shaped.

Please refer to FIG. 1E to remove the sacrificial layer 118a. In the case where the material of the sacrificial layer 118a is BARC, the method of removing the sacrificial layer 118a is, for example, an ashing method.

In this embodiment, although the spacer 126a is formed by the above method, the present invention is not limited to this. In other embodiments, the sacrificial material layer 118 and the sacrificial material layer 120 may be omitted, and the patterned photoresist layer 122 may be used as the sacrificial layer. In the case where the sacrificial material layer 118 and the sacrificial material layer 120 are omitted, and the patterned photoresist layer 122 is used as the sacrificial layer, the formation method of the spacer 126a may include the following steps. A spacer material layer 126 is conformally formed on the patterned photoresist layer 122, and then an etch-back process is performed on the spacer material layer 126, and spacers 126a are formed on the sidewalls of the opening OP1 of the patterned photoresist layer 122. In addition, after the spacer 126a is formed, the patterned photoresist layer 122 as a sacrificial layer may be removed.

1F, the pattern of the spacer 126a can be transferred to the hard mask layer 116 to form a patterned hard mask layer 116a. The patterned hard mask layer 116a may include a hard mask portion 116a-1 and a hard mask portion 116a-2. The shape of the hard mask portion 116a-1 corresponds to the shape of the spacer portion 126a-1. The hard mask part 116a-2 is connected to the hard mask part 116a-1. The shape of the hard mask portion 116a-2 corresponds to the shape of the spacer portion 126a-2. The width W11 of the hard mask portion 116a-2 may be greater than the width W10 of the hard mask portion 116a-1. In addition, the patterned hard mask layer 116a may further include a hard mask portion 116a-3. The hard mask part 116a-3 is connected to the hard mask part 116a-1. The shape of the hard mask portion 116a-3 corresponds to the shape of the spacer portion 126a-3. The width W12 of the hard mask portion 116a-3 may be greater than the width W10 of the hard mask portion 116a-1.

Then, the spacer 126a can be removed. The method of removing the spacer 126a is, for example, a wet etching method.

1G, a part of the hard mask portion 116a-1 can be removed to form a patterned hard mask layer 116b. The patterned hard mask layer 116b may include the remaining hard mask portion 116a-1, the hard mask portion 116a-2, and the hard mask portion 116a-3. For example, a part of the hard mask portion 116a-1 can be removed by a lithography process and an etching process (eg, a dry etching process). The pattern of the patterned hard mask layer 116b can be used to determine the pattern of the wire structure 106a (FIG. 1H and FIG. 2) to be formed. In addition, the pattern of the patterned hard mask layer 116b is not limited to the pattern of FIG. 1G, and the wire structure 106a to be formed (FIG. 1H and FIG. 2) can be adjusted by adjusting the removed portion of the hard mask portion 116a-1. pattern. In other embodiments, the pattern of the wire structure 106a (FIG. 1H and FIG. 2) to be formed can be adjusted by removing part of the hard mask portion 116a-2 and/or the hard mask portion 116a-3.

1H, the pattern of the patterned hard mask layer 116b can be sequentially transferred to the hard mask layer 114, the hard mask layer 112, the dielectric layer 110, the dielectric layer 108, the conductor layer 106, and part of the dielectric layer 104. Thereby, a part of the pattern of the spacer 126a can be transferred to the conductive layer 106 to form a wire structure 106a. The above-mentioned pattern transfer process can be performed by an etching process (for example, a dry etching process). The patterned hard mask layer 116b and the hard mask layer 114 can be removed in the pattern transfer process described above. In addition, after the pattern transfer process described above, the hard mask layer 112 can be removed. When the material of the hard mask layer 112 is amorphous carbon, the method for removing the hard mask layer 112 is, for example, an ashing method.

1H and FIG. 2, the wire structure 106a includes a plurality of wires 106b. The wire structure 106a may be a wire structure of a semiconductor device. For example, the wire structure 106a can be used as a bit line structure of a dynamic random access memory (DRAM). The shape of each wire 106b includes a wire portion 106b-1 and a wire portion 106b-2 connected to each other. The shape of the wire portion 106b-1 corresponds to the shape of the partial spacer portion 126a-1 in FIG. 1E. The shape of the partial wire portion 106b-2 corresponds to the shape of the spacer portion 126a-2 in FIG. 1E. In addition, the shape of the partial wire portion 106b-2 corresponds to the shape of the spacer portion 126a-3 in FIG. 1E. The width W14 of the wire portion 106b-2 may be greater than the width W13 of the wire portion 106b-1. The distance D1 between two adjacent wire portions 106b-2 may be greater than the distance D2 between two adjacent wire portions 106b-1.

In this embodiment, although the method of transferring the pattern of part of the spacer 126a to the conductor layer 106 is taken as an example, the present invention is not limited thereto. For example, in other embodiments, the hard mask layer 114 and the hard mask layer 112 can be omitted, and the pattern of the patterned hard mask layer 116b is sequentially transferred to the dielectric layer 110, the dielectric layer 108, The conductor layer 106 and part of the dielectric layer 104.

Based on the foregoing embodiment, it can be seen that in the manufacturing method of the wire structure 106a, the adjacent parts of the spacer material layer 126 located on the sidewall of the opening OP2-2 are merged together, so that the spacer part of the spacer 126a subsequently formed The width W8 of 126a-2 is greater than the width W7 of the spacer portion 126a-1 of the spacer 126a. In this way, in the wire 106b formed after the pattern of the partial spacer 126a is transferred to the conductor layer 106, the shape of the wire portion 106b-1 corresponds to the shape of the partial spacer portion 126a-1, and the wire portion 106b-2 The shape of φ corresponds to the shape of the spacer portion 126a-2, so that the wire portion 106b-2 can have a larger width. Since the wire portion 106b-2 has a relatively large width, the wire portion 106b-2 can be used as a pad portion for connecting to the contact window, and can prevent the opening of the contact window from passing through the wire 106b. On the other hand, when the opening OP2 includes the opening OP2-3, the adjacent parts of the spacer material layer 126 on the side wall of the opening OP2-3 merge together, so that the gap between the spacer 126a formed subsequently The width W9 of the wall portion 126a-3 may be greater than the width W7 of the gap wall portion 126a-1 of the gap wall 126a. In this way, since the shape of the wire portion 106b-2 corresponds to the shape of the spacer portion 126a-3, the wire portion 106b-2 can have a larger width, so the wire portion 106b-2 can be used as a pad portion, and It is possible to prevent the contact window opening from passing through the wire 106b.

In addition, since the width W5 of the opening OP2-2 in the sacrificial layer 118a is smaller than the width W4 of the opening OP2-1 in the sacrificial layer 118a, the two adjacent wires located at the ends of the two adjacent wires 106b can be made The portion 106b-2 has a relatively large distance, which can prevent the ends of two adjacent wires 106b from being short-circuited. On the other hand, in the case where the opening OP2 includes the opening OP2-3, since the width W6 of the opening OP2-3 in the sacrificial layer 118a is smaller than the width W4 of the opening OP2-1 in the sacrificial layer 118a, it is possible to make The two adjacent wire portions 106b-2 located at the ends of the two adjacent wires 106b have a relatively large distance, thereby preventing the ends of the two adjacent wires 106b from being short-circuited.

In addition, the manufacturing method of the wire structure 106a can form the spacer 126a through the SADP process, and compared with the traditional SADP process, no additional steps are added.

In this embodiment, although the manufacturing method of the wire structure 106a is described by taking the above-mentioned method as an example, the present invention is not limited thereto.

Hereinafter, a method of manufacturing a wire structure 106a according to another embodiment of the present invention will be described with reference to FIGS. 3A to 3B. 3A to 3B are perspective views of a manufacturing process of a wire structure according to another embodiment of the present invention. 3A to 3B are cross-sectional views of the manufacturing process following the steps of FIG. 1E.

Please refer to FIGS. 1A to 1H and FIGS. 3A to 3B. The differences between the embodiment of FIGS. 3A to 3B and FIGS. 1A to 1H are as follows.

In the embodiment of FIGS. 1A to 1H, part of the hard mask portion 116a-1 is removed to form a patterned hard mask layer 116b (FIG. 1G), and then the patterns of the patterned hard mask layer 116b are sequentially transferred To the hard mask layer 114, the hard mask layer 112, the dielectric layer 110, the dielectric layer 108, the conductor layer 106 and a portion of the dielectric layer 104 (FIG. 1H). That is, in the embodiment of FIGS. 1A to 1H, the pattern of the conductive line structure 106a (FIG. 1H and FIG. 2) to be formed is determined by the pattern of the patterned hard mask layer 116b.

However, in the embodiment of FIGS. 3A to 3B, after the sacrificial layer 118a is removed (FIG. 1E), part of the spacer portion 126a-1 is removed to form the spacer structure 126b (FIG. 3A). The spacer structure 126b may include the remaining spacer part 126a-1, the spacer part 126a-2, and the spacer part 126a-3. For example, a lithography process and an etching process (eg, a dry etching process) may be used to remove part of the spacer portion 126a-1. Then, the pattern of the spacer structure 126b can be sequentially transferred to the hard mask layer 116, the hard mask layer 114, the hard mask layer 112, the dielectric layer 110, the dielectric layer 108, the conductor layer 106, and part of the dielectric layer. 104 (Figure 3B). That is, in the embodiment of FIGS. 3A to 3B, the pattern of the conductive line structure 106a (FIG. 3B and FIG. 2) to be formed is determined by the pattern of the spacer structure 126b.

In addition, the pattern of the spacer structure 126b is not limited to the pattern of FIG. 3A, and the pattern of the conductor structure 106a to be formed can be adjusted by adjusting the removed portion of the spacer portion 126a-1. In other embodiments, the pattern of the wire structure 106a to be formed can be adjusted by removing part of the spacer portion 126a-2 and/or the spacer portion 126a-3.

In addition, in the embodiment of FIGS. 3A to 3B, the pattern transfer process can be performed by an etching process (eg, a dry etching process). After transferring the pattern of the spacer structure 126b to the hard mask layer 116, the spacer structure 126b may be removed. The method for removing the spacer structure 126b is, for example, a wet etching method. In addition, the hard mask layer 116 and the hard mask layer 114 can be removed during the pattern transfer process described above. In addition, after the pattern transfer process described above, the hard mask layer 112 can be removed. When the material of the hard mask layer 112 is amorphous carbon, the method for removing the hard mask layer 112 is, for example, an ashing method.

On the other hand, in the embodiment of FIGS. 1A to 1H and the embodiment of FIGS. 3A to 3B, the same or similar components are denoted by the same symbols and have the same or similar functions, and their description is omitted here.

In summary, the manufacturing method of the wire structure of the above embodiment can prevent the contact window opening from passing through the wire, and can prevent the ends of two adjacent wires from being short-circuited. In addition, and compared with the traditional SADP process, the manufacturing method of the wire structure of the above embodiment does not add additional steps.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to those defined by the attached patent scope.

100: base 102, 104, 108, 110: Dielectric layer 106: Conductor layer 106a: Wire structure 106b: Wire 106b-1, 106b-2: Lead wire part 112, 114, 116: hard mask layer 116a, 116b: Patterned hard mask layer 116a-1, 116a-2, 116a-3: hard mask 118, 120: Sacrificial material layer 118a: Sacrificial layer 122: patterned photoresist layer 126: Spacer material layer 126a: Clearance wall 126b: Spacer structure 126a-1, 126a-2, 126a-3: Clearance wall part D1, D2: distance OP1, OP2: opening OP1-1, OP1-2, OP1-3, OP2-1, OP2-2, OP2-3: opening T1: thickness W1~W14: width

1A to 1H are perspective views of a manufacturing process of a wire structure according to an embodiment of the present invention. Fig. 2 is a top view of the wire structure in Fig. 1H. 3A to 3B are perspective views of a manufacturing process of a wire structure according to another embodiment of the present invention.

106a: Wire structure

106b: Wire

106b-1, 106b-2: Wire part

D1, D2: distance

W13, W14: width

Claims (8)

A method for manufacturing a wire structure includes: forming a conductor layer on a substrate; forming a sacrificial layer on the conductor layer, wherein the sacrificial layer has a first opening, wherein the first opening includes: a first opening; and The second opening is connected to one end of the first opening, wherein the width of the second opening is smaller than the width of the first opening; a spacer material layer is conformally formed on the sacrificial layer, The adjacent parts of the spacer material layer located on the side wall of the second opening are merged together; the spacer material layer is etched back to form a gap on the side wall of the first opening Wall, wherein the gap wall includes: a first gap wall portion located on the side wall of the first opening portion; and a second gap wall portion located in the second opening portion and connected to the first gap portion A spacer part, wherein the width of the second spacer part is greater than the width of the first spacer part; removing the sacrificial layer; and transferring part of the spacer pattern to the conductor layer, and A wire structure is formed, wherein the wire structure includes a plurality of wires, wherein the shape of each wire includes a first wire portion and a second wire portion connected to each other, wherein the shape of the first wire portion corresponds to a part of the wire The shape of the first spacer part, and the shape of the second wire part corresponds to the shape of the second spacer part, The method for transferring part of the pattern of the spacer to the conductor layer includes: removing part of the first spacer portion to form a spacer structure, wherein the spacer structure includes the remaining first gap A wall portion and the second gap wall portion; and transferring the pattern of the gap wall structure to the conductor layer. The method of manufacturing a wire structure according to claim 1, wherein the second gap wall portion fills the second opening portion. The method for manufacturing a wire structure according to claim 1, wherein the method for forming the sacrificial layer includes: forming a sacrificial material layer on the conductor layer; forming a patterned photoresist layer on the sacrificial material layer, wherein The patterned photoresist layer has a second opening, wherein the second opening includes: a third opening, wherein the shape of the first opening corresponds to the shape of the third opening; and a fourth opening, One end connected to the third opening, wherein the shape of the second opening corresponds to the shape of the fourth opening, and the width of the fourth opening is smaller than the width of the third opening; And transferring the pattern of the patterned photoresist layer to the sacrificial material layer. The method for manufacturing a wire structure according to claim 1, wherein the method of transferring a part of the spacer pattern to the conductor layer further includes: before forming the sacrificial material layer, forming a hard layer on the conductor layer. Veil Layer, wherein the sacrificial material layer is formed on the hard mask layer; and after the spacer structure is formed, the pattern of the spacer structure is sequentially transferred to the hard mask layer and the conductor Floor. The method for manufacturing a wire structure according to claim 1, wherein the method for forming the spacer material layer includes a molecular layer deposition method. The method for manufacturing a wire structure according to claim 1, wherein the thickness of the spacer material layer is greater than or equal to one-half of the width of the second opening. The manufacturing method of the wire structure according to claim 1, wherein the width of the second wire portion is greater than the width of the first wire portion. The manufacturing method of the wire structure according to claim 1, wherein the distance between two adjacent second wire portions is greater than the distance between two adjacent first wire portions.

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