TW202209589A - 半導體晶粒封裝與製造方法 - Google Patents

半導體晶粒封裝與製造方法 Download PDF

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TW202209589A
TW202209589A TW110119920A TW110119920A TW202209589A TW 202209589 A TW202209589 A TW 202209589A TW 110119920 A TW110119920 A TW 110119920A TW 110119920 A TW110119920 A TW 110119920A TW 202209589 A TW202209589 A TW 202209589A
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die
connectors
area
package
dummy
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TW110119920A
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TWI773354B (zh
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黃冠育
黃松輝
侯上勇
許書嘉
黃裕允
張文耀
鄭育真
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台灣積體電路製造股份有限公司
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Abstract

在一實施例中，中介物具有第一側，第一積體電路裝置透過第一組導電連接器貼合至中介物的第一側，並且第一組導電連接器的每一個具有第一高度。第一晶粒封裝透過第二組導電連接器貼合至中介物的第一側。第二組導電連接器包括第一導電連接器以及第二導電連接器。第一導電連接器具有第二高度，第二導電連接器具有第三高度。第三高度不同於第二高度。第一虛設導電連接器位於中介物的第一側與第一晶粒封裝之間。底部填充膠設置於第一積體電路裝置與第一晶粒封裝之下。密封體設置於第一積體電路裝置與第一晶粒封裝周圍。

Description

半導體晶粒封裝與製造方法
各種電子構件（例如電晶體、二極體、電阻器、電容器等）的整合密度不斷提高，促成了半導體產業的快速成長。在大多數的情況下，最小特徵尺寸反覆縮小即可提高整合密度，從而可將更多構件整合到給定區域中。小尺寸電子裝置需求上的成長，也使得更小且更具創造性的半導體晶粒封裝技術的需求不斷提高。疊層封裝（Pakage-on-Package，PoP）技術即為此種封裝系統的範例。在PoP裝置中，頂部半導體封裝堆疊在底部半導體封裝的頂部，以提供高度整合和構件密度。一般而言，透過PoP技術，即可在印刷電路板（Printed Circuit Board，PCB）上，生產具有功能較強且佔用區域較小的半導體裝置。
以下揭露內容提供諸多不同的實施例或實例以用於實施本發明實施例的不同特徵。下文闡述構件及排列的具體實例以簡化本揭露。當然，這些僅為實例且不用於在進行限制。舉例而言，在以下說明中第一特徵形成於第二特徵「之上」或形成於第二特徵「上」可包括其中第一特徵與第二特徵被形成為直接接觸的實施例，並且亦可包括其中第一特徵與第二特徵之間可形成有額外特徵使得所述第一特徵與所述第二特徵可不直接接觸的實施例。另外，本揭露可在各種實例中重複使用參考編號及/或字母。此種重複是出於簡潔及清晰的目的，而非自身指示所論述的各種實施例及/或配置之間的關係。
此外，為易於說明起見，本文中可使用例如「位於…之下（beneath）」、「位於…下方（below）」、「下部的（lower）」、「位於…上方（above）」、「上部的（upper）」等空間相對性用語來闡述圖中所示的一個元件或特徵與另一（其他）元件或特徵的關係。除圖中所繪示的定向之外，所述空間相對性用語亦旨在囊括裝置在使用或操作中的不同定向。設備可具有其他定向（旋轉90度或處於其他定向），並且同樣地可對本文中所使用的空間相對性描述語加以相應地解釋。
根據一些實施例，使用具有不同高度的連接器將積體電路裝置貼合至晶圓，其可解決積體電路晶粒及/或晶圓的翹曲問題。在一些實施例中，這些連接器是由電鍍方法所形成的微凸塊。在一些實施例中，藉由在形成過程中，藉由在積體電路裝置和晶圓之一或兩者上插入虛設微凸塊，來調整某些區域中的微凸塊的圖案密度，即可獲得不同高度的微凸塊。舉例而言，如果第一區域需具有比第二區域更短的微凸塊高度，則可藉由在第一區域中插入虛設微凸塊來增加第一區域中的微凸塊的圖案密度。不同高度連接器的這種形成方式，可防止冷接頭（cold joint）或連接器損壞，從而可以提高裝置的可靠性和良率。
接下來的實施例將說明系統晶片（System-on-a-Chip，SoC）。然而，實施例並非用來設下限制，而是可以應用在各式各樣的實施例中。在一些實施例中，晶粒封裝是包括接合在一起的多個晶粒而形成的。這些晶粒例如可利用混合接合來接合在一起。晶粒封裝可以包括基板通孔及/或介電通孔。除了記憶體晶粒、I/O晶粒等的其他半導體裝置外，還可以藉由結合晶粒封裝來形成封裝。晶粒封裝和半導體裝置可以包括用於電性連接到單個重佈線結構的不同尺寸的導電特徵。藉由形成接合的晶粒的晶粒封裝以及將晶粒封裝和半導體裝置結合在同一封裝中，可以縮小封裝的尺寸並可改善封裝的高速操作。
圖1是根據一些實施例的積體電路裝置50的剖視圖。積體電路裝置50可以是邏輯晶粒（例如中央處理單元（Central Processing Unit，CPU）、圖形處理單元（Graphics Processing Unit，GPU）、系統晶片（System-on-a-Chip，SoC）、微控制器等、記憶體晶粒（例如動態隨機存取記憶體（Dynamic Random Access Memory，DRAM）晶粒、靜態隨機存取記憶體（Static Random Access Memory，SRAM）晶粒等等）、電源管理晶粒（例如電源管理積體電路（Power Management Integrated Circuit，PMIC）晶粒）、射頻（Radio Frequency，RF）晶粒、感測器晶粒、微機電系統（Micro-Electro-Mechanical-System，MEMS）晶粒、訊號處理晶粒（例如數位訊號處理（Digital Signal Processing，DSP）晶粒）、前端晶粒（例如類比前端（Analog Front-End，AFE）晶粒）等，或以上的組合。積體電路裝置50可以在晶圓中形成，該晶圓可包括在後續步驟中單體化的不同裝置區域，即可形成多個積體電路裝置50。積體電路裝置50包括基板52以及內連線結構54。
基板52可包括塊狀半導體基板、絕緣體上半導體（Semiconductor-On-Insulator，SOI）基板、多層半導體基板等等。基板52的半導體材料可以是矽、鍺、化合物半導體，包括矽鍺、碳化矽、鎵砷、磷化鎵、磷化銦、砷化銦及/或銻化銦；合金半導體，包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP及/或GaInAsP；或其組合。亦可使用其他基板，例如多層基板或梯度基板。基板52可以是摻雜的或未摻雜的。諸如電晶體、電容器、電阻器，二極體等之類的元件可以形成在基板52的主動表面（例如面向上的表面）之內及/或之上。
具有一個或多個介電層以及相應金屬化圖案的內連線結構54形成在基板52的主動表面上。介電層可以是金屬間介電（Inter-Metallization Dielectric，IMD）層。IMD層例如可以由低介電常數（low-K）材料所形成，例如未摻雜矽玻璃（Undoped Silicate Glass，USG）、磷矽酸鹽玻璃（PhosphoSilicate Glass，PSG）、硼磷矽玻璃（BoroPhosphoSilicate Glass，BPSG）、氟化矽玻璃（FluoroSilicate Glass，FSG）、SiOx Cy 、旋塗式玻璃、旋塗式高分子聚合物、矽碳材料、其化合物、其複合物、其組合等，藉由本領域任何已知的適用方法形成，例如旋轉塗佈、化學氣相沉積（Chemical Vapor Deposition，CVD）、電漿增強CVD（Plasma-Enhanced CVD，PECVD）、高密度電漿化學氣相沉積（High-Density Plasma-Chemical Vapor Deposition，HDP-CVD）等等。介電層中的金屬化圖案可例如藉由利用通孔及/或走線在元件之間路由電訊號，並且還可包含各種電性元件，例如電容器、電阻器、電感器等等。各種元件與金屬化圖案可以內連以執行一個或多個功能。這些功能可包括記憶體結構、處理結構、感測器、放大器、功率分配、輸入/輸出電路等等。此外，在內連線結構54之內及/或之上形成諸如導電柱或接觸墊之類的晶粒連接器，以提供連接至電路以及元件的外部電性連接。所屬技術領域中具有通常知識者應瞭解，提供上述範例的是出於說明性的目的。對於給定的應用，可以適當地使用其他電路。
在一些實施例中，積體電路裝置50是一個包括多個基板52的堆疊裝置。舉例來說，積體電路裝置50可以是包括多個記憶體晶粒的記憶體裝置，例如混合記憶體立方體（Hybrid Memory Cube，HMC）模組、高頻寬記憶體（High Bandwidth Memory，HBM）模組等。在這樣的實施例中，積體電路裝置50包括藉由通孔內連的多個基板52。每個基板52可具有（或可不具有）單獨的內連線結構54。
圖2至圖6是根據一些實施例繪示的形成晶粒封裝100（請參閱圖6）的剖視圖。在一些實施例中，晶粒封裝100例如是系統晶片（System-on-a-Chip，SoC）封裝、系統積體電路（System-on-an-Integrated-Circuit，SoIC）封裝等等。請參閱圖2，圖2繪示了半導體裝置102。半導體裝置102可以例如是記憶體裝置、邏輯裝置、電源裝置、以上裝置的組合或其他半導體裝置等，其設計為與晶粒封裝100內的其他裝置相互配合運作。但任何合適的功能皆適用。
在一個實施例中，半導體裝置102包括第一基板104、多個第一主動裝置（未單獨示出）、多個第一金屬化層106、接合層108以及接合層108內的接合金屬110。第一基板104可包括摻雜或未摻雜的塊狀矽，或是絕緣體上覆矽（Silicon-On-Insulator，SOI）基板的主動層。SOI基板通常包括一層半導體材料，例如矽、鍺、矽鍺、SOI、絕緣體上矽鍺（Silicon Germanium-on-Insulator，SGOI）或以上的組合。可以使用的其他基板包括多層基板、梯度基板或混合取向基板。
第一主動裝置包括各類的主動裝置與被動裝置，例如電晶體、電容器、電阻器，電感器等，其可以用於產生半導體裝置102的設計所需的結構和功能要求。可以使用任何合適的方法在第一基板104內或在第一基板104上形成第一主動裝置。
第一金屬化層106形成在第一基板104與第一主動裝置上方，並被設計用來連接各種主動裝置以形成功能電路。在一實施例中，第一金屬化層106由介電與導電材料以層層交替的方式形成，並且可通過任何合適的製程（諸如沉積、鑲嵌、雙鑲嵌等）形成。在一實施例中，可以藉由至少一層間介電層（Interlayer Dielectric Layer，ILD）將四層的金屬化層與第一基板分開，但第一金屬化層106的確切數目依設計而定。
接合層108沉積在第一金屬化層106上方。接合層108可以用於熔融接合（也稱為氧化物對氧化物接合或介電質對介電質接合）。根據一些實施例，接合層108是由例如氧化矽、氮化矽等的含矽介電材料形成。可以例如使用CVD、高密度電漿化學氣相沉積（High-Density Plasma Chemical Vapor Deposition，HDPCVD）、PVD、原子層沉積（Atomic Layer Deposition，ALD）等之類的任何適當方法來沉積接合層108。可以例如使用化學機械拋光（Chemical Mechanical Polish，CMP）製程來平坦化接合層108。
接合金屬110可形成在接合層108內。在一實施例中，接合金屬110的形式方式，是首先在接合層108的頂面上塗覆光阻劑並將其圖案化，接著在接合層108內形成開口。接下來將圖案化的光阻劑作為蝕刻遮罩使用來蝕刻接合層108以形成開口。可以藉由例如乾式蝕刻（例如反應性離子蝕刻（Reactive Ion Etching，RIE）或中性束蝕刻（Neutral Beam Etching，NBE）等）、濕式蝕刻等合適的製程來蝕刻接合層108。接合金屬110也可被稱為「接合墊」或「金屬墊」。
開口形成後，將接合金屬110填充進接合層108內的開口中。在一實施例中，接合金屬110可包括晶種層與鍍金屬。晶種層可透過毯覆式沉積的方式沉積在接合層108的頂面上，例如可包括銅層。取決於所需的材料，可以使用例如濺射，蒸發、或電漿增強型化學氣相沉積（Plasma-Enhanced Chemical Vapor Deposition，PECVD）等製程來沉積晶種層。可以藉由例如電鍍或無電鍍覆等的電鍍製程將鍍金屬沉積在晶種層上。鍍金屬可包括銅、銅合金等。在一些實施例中，鍍金屬可以是填充材料。在沉積晶種層之前，可透過毯覆式沉積的方式將阻擋層（未單獨示出）沉積在接合層108的頂面上。阻擋層可包括鈦、氮化鈦、鉭、氮化鉭等。
請繼續參閱圖2，半導體裝置102可包括多個延伸通過基板104的基板通孔（Through Substrate Via，TSV）112，以促進電訊號的傳輸。在其他的實施例中，半導體裝置102不包括TSV 112。在一實施例中，首先可以藉由在基板104內形成多個TSV開口來形成這些TSV 112。可以藉由塗覆與圖案化光阻劑（未示出）來暴露出基板104的多個區域，然後蝕刻基板104暴露出來的多個部分至所需深度，即可形成TSV開口。可以形成TSV開口，以便比形成在基板104內及/或上的主動裝置至少更進一步延伸進基板104中，並且可以延伸至大於基板104的最終所需高度的深度。因此，儘管深度取決於整體設計，但是距離基板104上的主動裝置的深度可以在約20μm至約200μm之間，例如距離基板104上的主動裝置的深度例如約50μm。
一旦這些TSV開口在基板104內形成後，可以在TSV開口內填塞襯層（未示出）。襯層例如可以是正矽酸四乙酯（tetraethylorthosilicate，TEOS）或氮化矽形成的氧化物，但也可以替換使用任何合適的介電材料。襯層可以藉由使用電漿增強型化學氣相沉積（plasma enhanced chemical vapor deposition，PECVD）製程來形成，但也可以替換使用其他適合的製程，例如物理氣相沉積或熱製程。此外，襯層可以形成為在約0.1μm與約5μm之間的厚度，例如約1μm。
一旦襯層沿著TSV開口的側壁和底部形成，即可形成阻擋層（也未單獨示出），並且可以用第一導電材料填充TSV開口的其餘部分，從而形成TSV 112。第一導電材料可包括銅，但是可以替代使用其他合適的材料，例如鋁、合金、摻雜的多晶矽、其組合等。可以藉由將銅電鍍到晶種層（未示出）上，填充和過度填充TSV開口，來形成第一導電材料。TSV開口經填充後，可例如藉由化學機械拋光（Chemical Mechanical Polishing，CMP）的平坦化製程，去除TSV開口外的多餘襯層、阻擋層、晶種層、第一導電材料，但也可利用其他合適的去除製程。在一些實施例中，可將TSV 112形成為具有約0.5μm至10μm之間的寬度，例如約2μm。在一些實施例中，可將TSV 112形成為具有約1μm至40μm之間的間距，例如約10μm。但任何合適的尺寸皆適用。
在一些實施例中，多個半導體裝置102形成在同一基板104上，然後被單體化以形成單獨的半導體裝置102。可以使用切割製程、雷射製程、蝕刻製程等或其組合，來將半導體裝置102單體化。單體化完成後，在一些實施例中，半導體裝置102可具有在約30μm和約200μm之間的厚度，例如約100μm。在一些實施例中，半導體裝置102可具有在約1 mm2 和約850 mm2 之間的面積，例如約30 mm2 。除了以上的尺寸外，半導體裝置102可具有其他尺寸。在一些實施例中，可在單體化之前或之後，將已知良好晶粒（Known Good Die，KGD）與有缺陷晶粒分開。
圖3繪示了將半導體裝置102接合至第一晶圓120。在一些實施例中，第一晶圓120可以是應用處理器晶圓，其中半導體晶粒（未單獨示出）形成為與半導體裝置102配合運作。但任何合適的功能，例如額外的記憶體或其他功能也可適用。第一晶圓120可包括第二基板122與多個第二主動裝置（圖3中未單獨示出）。在一實施例中，第二基板122與第二主動裝置可類似於圖2中的第一基板104與第一主動裝置。舉例而言，第二基板122可以是一個半導體基板，而第二主動裝置可以是形成在第二基板122之上或之內的主動或被動裝置。但任何合適的基板與主動裝置皆適用。
第一晶圓120也可包括第二金屬化層124、第二接合層126以及第二接合金屬128。在一實施例中，第二金屬化層124、第二接合層126及第二接合金屬128可類似於第一金屬化層106、第一接合層108及第一接合金屬110。舉例而言，第二接合金屬128可以是在形成第二接合層126之後，放置到第二接合層126中的金屬。
在另一實施例中，第二接合金屬128與第二接合層126形成為第二金屬化層124的一部分。舉例而言，第二接合層126可形成為覆蓋主動裝置的初始介電層，而第二接合金屬128可以形成在第二接合層126內並且與主動裝置相鄰，此即為所謂的「via0」配置。但任何合適的第二接合金屬128與第二接合層126配置都適用。
在第二接合層126與第二接合金屬128形成後，半導體裝置102即可接合到第一晶圓120。在一些實施例中，例如可以使用混合接合製成，來將半導體裝置102接合到第一晶圓120，其中第一接合層108是接合到第二接合層126，而第一接合金屬110是接合到第二接合金屬128。在一些實施例中，首先例如可以利用乾式處理、濕式處理、電漿處理、暴露於惰性氣體、暴露於H2 、暴露於N2 、暴露於O2 或其組合來活化第一晶圓120以及半導體裝置102的頂面。但任何合適的活化製程皆適用。
活化製程完成後，例如可以使用化學沖洗來清潔第一晶圓120和半導體裝置102，接著將半導體裝置102對準並放置，使其與第一晶圓120物理接觸。例如可以使用拾取及放置製程，來將半導體裝置102放置在第一晶圓120上。然後，對第一晶圓120和半導體裝置102進行熱處理並施加接觸壓力，以將第一晶圓120混合接合到半導體裝置102。舉例而言，可以施加約200kPa或更低的壓力以及約200°C至約400°C之間的溫度至第一晶圓120與半導體裝置102，以熔融第一接合層108與第二接合層126。然後，可施加等於或高於第一接合金屬110和第二接合金屬128的材料共晶點的溫度，例如約150°C至約650°C之間的溫度至第一晶圓120和半導體裝置102來熔融金屬接合墊。以此方式，第一晶圓120和半導體裝置102的熔融形成了混合接合裝置。在一些實施例中，接合的晶粒經烘烤、退火、壓製或以其他方式處理以增強或完成接合。
此外，在以上的描述中，儘管第二接合金屬128是在第二金屬化層124內，並且第一接合金屬110是在第一金屬化層106之上，但以上描述僅是示例性而非限制性的。更確切地說，任何合適的組合，包括第一接合金屬110位於第一金屬化層106內（例如在via0內），皆可適用。在其他的實施例中，可藉由直接表面接合、金屬對金屬接合，或其他接合製程，將第一晶圓120接合至半導體裝置102。直接表面接合製程是藉由清潔及/或表面活化製程，然後對結合的表面施加壓力、熱及/或其他接合製程步驟，來產生介電質對介電質接合或基板對基板接合。在一些實施例中，第一晶圓120與半導體裝置102藉由熔融導電元件而實現的金屬對金屬的接合來結合在一起。任何合適的接合製程皆適用。
圖4繪示了半導體裝置102的薄化以暴露TSV 112。在一實施例中，可以利用例如化學機械平坦化（Chemical Mechanical Planarization，CMP）製程等平坦化製程來執行半導體裝置102的薄化，其中蝕刻劑（etchant）和研磨劑（abrasive）與研磨平台（grinding platen）一起使用，以便進行反應並研磨掉材料，直到形成平坦表面並露出TSV 112。然而，也可以利用任何其他合適的方法來暴露TSV 112，例如一系列的一個或多個蝕刻製程。
圖5繪示在第二接合金屬128上形成多個介電通孔（Through Dielectric Via，TDV）130。在其他的實施例中，並不形成TDV 130。在一實施例中，首先可以藉由在第二接合金屬128之上（或若有需要，也可在單獨設置的晶種層之上）放置並圖案化光阻劑（圖5中未單獨示出）來形成TDV 130。在一實施例中，形成在光阻劑中的圖案是用於TDV 130的圖案。TDV 130可以在半導體裝置102的不同側邊形成。但任何適用於TDV 130圖案的排列都適用。在一些實施例中，TDV 130的間距可大於TSV 112的間距。
一旦在光阻劑放置完成並圖案化之後，TDV 130可以形成在光阻劑之內。在一實施例中，TDV 130包括一種或多種導電材料，諸如銅、鎢、其他導電金屬等，並且可以例如透過電鍍、無電鍍覆等方式形成。在形成TDV 130的導電材料後，可以使用適當的去除製程，例如電漿灰化製程或濕式化學剝離，來去除光阻劑。在一些實施例中，可將TDV 130形成為具有約10μm至約200μm之間的寬度，例如約150μm。此外，可將TDV 130形成為具有約35μm至約250μm之間的高度，例如約180μm。但任何合適的尺寸皆適用。
在一些實施例中，在TDV 130形成之後，可以使每個半導體裝置102的第一基板104凹陷。例如可以使用一個或多個蝕刻製程（例如濕式蝕刻製程或乾式蝕刻製程）使第一基板104凹陷。然而，可以使第一基板104凹陷以使TSV 112遠離第一基板104延伸的任何合適的方法皆適用。以這種方式，TSV 112可以從晶粒封裝100的第一基板104突出，以促進在後續處理步驟中與外部的連接。
請參閱圖6，形成介電層132並執行單體化製程，來形成個別的晶粒封裝100。圖6示出了個別的晶粒封裝100。在使第一基板104凹陷後，可在半導體裝置102與TDV 130之上形成一介電層132。在一些實施例中，介電層132可以例如是低溫聚酰亞胺材料之類的材料，但任何其他合適的介電質，例如PBO、其他聚合物、樹脂、環氧樹脂等或其組合也可適用。在一些情況下，介電層132可以被固化。
在形成介電層132之後，將第一晶圓120薄化，然後執行單體化製程，以單體化個別晶粒封裝100。在一實施例中，可以例如利用CMP製程或研磨製程等的平坦化製程來薄化第一晶圓120的背面。然而，任何合適的用於薄化第一晶圓120的製程，例如一系列的一個或多個蝕刻或拋光和蝕刻的組合製程皆可適用。
在一些實施例中，介電層132可以形成為覆蓋TDV 130和TSV 112，隨後可以凹入以暴露出TDV 130和TSV 112。可以例如使用平坦化製程（例如CMP製程或研磨製程）或一種或多種蝕刻製程（例如濕式蝕刻製程或乾式蝕刻製程）使介電層132凹陷。但任何可以使介電層132凹陷的方法都適用。以這種方式，可以將TDV 130與TSV 112暴露出來，以促進在後續處理步驟中與外部的連接。
在一些實施例中，在形成介電層132之後（並且在選擇性的凹陷步驟之後），介電層132、TDV 130及TSV 112的表面在製程變化內呈共面。可以使用切割製程、雷射製程、蝕刻製程等或其組合，來將第一晶圓120單體化。
圖7至圖12B以及圖19至圖26是根據一些實施例，在形成半導體裝置的製程期間的中間步驟的剖視圖和俯視圖。圖13至圖18D是根據各種實施例，主動與虛設連接器的配置的剖視圖和俯視圖。在圖7至圖12A以及圖19至圖25中，裝置封裝200是藉由將各種積體電路裝置50和晶粒封裝100接合到中介物170的前側而形成的。在一些實施例中，裝置封裝200是晶圓上晶片（Chip-On-Wafer，CoW）封裝，但應理解的是，實施例可以應用於其他三維積體電路（Three-Dimensional Integrated Circuit，3DIC）封裝。在圖25中，藉由將裝置封裝200安裝至封裝基板來形成裝置封裝400。在一實施例中，裝置封裝400是基板上晶圓上晶片（Chip-On-Wafer-On-Substrate，CoWoS® ）封裝，但應理解的是，實施例可以應用於其他3DIC封裝。
圖7是根據一些實施例的中介物170的剖視圖。儘管僅示出了一個中介物170，但應理解的是，中介物170可以形成在具有多個裝置區的晶圓中，其中每個裝置區都用於形成一個中介物170。中介物170包括基板172、多個貫通孔174、內連線結構176。
基板172可以是塊狀半導體基板、SOI基板、多層半導體基板等等。基板172的半導體材料可以是矽、鍺、化合物半導體，包括矽鍺、碳化矽、鎵砷、磷化鎵、磷化銦、砷化銦及/或銻化銦；合金半導體，包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP及/或GaInAsP；或其組合。亦可使用其他基板，例如多層基板或梯度基板。基板172可以是摻雜的或未摻雜的。諸如電晶體等之類的主動元件可以（可以不）形成在基板172的前表面（例如，面向上的表面）之內及/或之上。諸如電容器、電阻器、二極體等等的被動元件可以（可以不）位於基板172的前表面之內及/或之上。
形成貫通孔174，以從基板172的前表面延伸到基板172之中。當基板172是矽基板時，貫通孔174有時也稱為基板通孔或矽通孔（Through-Silicon Via，TSV）。可以例如藉由蝕刻、研磨（milling）、雷射技術，其組合等在基板172中形成凹部來形成貫通孔174。可以例如藉由使用氧化技術在凹部中形成薄的介電材料。可以例如藉由CVD、原子層沉積（Atomic Layer Deposition，ALD）、物理氣相沉積（Physical Vapor Deposition，PVD）、熱氧化及/或其組合等，將薄的阻擋層共形地沉積在基板172的前側上方和開口中。阻擋層可以由氮化物或氮氧化物形成，例如氮化鈦、氮氧化鈦、氮化鉭、氮氧化鉭、氮化鎢及/或其組合等等。可以將導電材料沉積在薄的阻擋層上方和開口中。導電材料可以藉由電化學鍍覆製程、CVD、ALD、PVD及/或其組合等形成。導電材料例如可以是銅、鎢、鋁、銀、金及/或其組合等。例如可藉由化學機械拋光（chemical-mechanical polish，CMP）從基板172的前側去除多餘的導電材料和阻擋層。因此，貫通孔174可包括導電材料，並且在導電材料和基板172之間具有薄的阻擋層。
內連線結構176形成在基板172的前表面上方，並且用於將基板172的裝置（如果有的話）及/或貫通孔174電性連接在一起及/或電性連接到外部裝置。內連線結構176可包括一個或多個介電層178和在介電層中的個別的金屬化圖案180。金屬化圖案180可包括通孔及/或走線，以將任何裝置及/或貫通孔174互連在一起及/或互連到外部裝置。介電層178可以由氧化矽、氮化矽、碳化矽、氮氧化矽、低介電常數（low-K）材料所形成，例如PSG、BPSG、FSG、SiOx Cy 、旋塗式玻璃、旋塗式高分子聚合物、矽碳材料、其化合物、其複合物、其組合等。介電層178可以藉由任何合適的方法沉積，例如旋塗、CVD、PECVD、HDP-CVD等。可以例如藉由使用微影（photolithography）技術在介電層上沉積和圖案化光阻材料，以暴露介電層的要成為金屬化圖案的部分，以在介電層178中形成金屬化圖案180。可以使用例如非等向性乾式蝕刻製程等的蝕刻製程，來在介電層178中產生與介電層178的暴露部分相對應的凹部及/或開口。這些凹部及/或開口可以填塞進擴散阻擋層並且填充有導電材料。擴散阻擋層可以由一層或多層的TaN、Ta、TiN、Ti、CoW等形成，並可藉由ALD等沉積，而導電材料可以由銅、鋁、鎢、銀，或其組合等形成，並可藉由CVD、PVD等沉積。例如可以藉由使用CMP來去除介電層178上的任何多餘的擴散阻擋層及/或導電材料。
圖8至圖10以圖7的一部分的詳細視圖，繪示了在內連線結構176上的電連接器的形成。在圖8中，介電層178被繪示為在最上方的金屬化圖案180之上延伸並覆蓋。但在一些實施例中，介電層178和最上方的金屬化圖案180的頂表面，在製程變化內是共面的。在圖8中，金屬化圖案180A電性耦接至內連線結構中的其他金屬化圖案，隨後可以電性耦接至積體電路裝置50及/或晶粒封裝100（也可以稱為主動金屬化圖案180A）。金屬化圖案180B（也可以稱為虛設金屬化圖案180B）與內連線結構中的其他金屬化圖案電性隔離，隨後將不電性耦接至積體電路裝置50及/或晶粒封裝100。在一些實施例中，最頂部的金屬化圖案180（所示的180A和180B是其一部分）可以被稱為接墊180或凸塊下金屬（Underbump Metallization，UBM）180。
雖然繪示出了單個虛設接墊180B，但在一些實施例中，可根據需求而包含更多虛設接墊180B。舉例而言，視中介物170的設計和整體封裝結構而定，單個內連線結構176可包括數百、數千或更多的虛設接墊180B。將於下詳細討論的是，虛設接墊180B放置在內連線結構176的特定區域中，以增加接墊180的圖案密度，並在那些特定區域中形成導電凸塊204，如此一來，接墊180和形成的導電凸塊204中的圖案密度的差異，改變了那些特定區域中的導電凸塊204的形成速率。舉例而言，可以藉由諸如電鍍之類的電鍍製程，來形成導電凸塊204，並且接墊180和導電凸塊204的圖案密度會影響並改變鍍覆速率。具體地，接墊180和導電凸塊204的圖案密度較高的區域的電鍍速率較慢，接墊180和導電凸塊204的圖案密度較低的區域的電鍍速率較快。如下面進一步討論的，鍍覆速率的這項差異可用於調整中介物170的不同區域中的導電凸塊204的高度，以便處理中介物170及/或隨後貼合至中介物170的積體電路裝置50和晶粒封裝100的翹曲。
在圖9中，在內連線結構176上沉積並圖案化光阻材料182，以暴露出介電層178的部分，其中隨後的圖案化製程將用於圖案化暴露出來的介電層178。更進一步，在圖9中，可以使用例如非等向性乾式蝕刻製程等的蝕刻製程，來在介電層178中產生與介電層178的暴露部分相對應的凹部及/或開口，以暴露出部分的接墊180。
在圖10中，包括導電凸塊204和導電連接器206的電連接器形成在暴露的接墊180上。導電凸塊204A和導電連接器206A（也可稱為主動導電凸塊204A和主動導電連接器206A）電性耦接到主動金屬化圖案180A，並且隨後可電性耦接到積體電路裝置50及/或晶粒封裝100。導電凸塊204B和導電連接器206B（也可稱為虛設導電凸塊204B和虛設導電連接器206B）電性耦接到與內連線結構中的其他金屬化圖案電性隔離的主動金屬化圖案180B，隨後不電性耦接到積體電路裝置50及/或晶粒封裝100。
導電凸塊204由諸如銅、鋁、金、鎳、鈀等或其組合的導電材料形成，並且可以藉由濺射、印刷、電鍍、無電鍍覆、CVD等方式形成。導電凸塊204可以是無焊料的，大體上具有垂直的側壁，並且可以被稱為凸柱（pillar）。導電凸塊204電性且物理連接到內連線結構176。主動導電連接器206A將導電凸塊204接合至其他裝置（例如於隨後接合的裝置100和50）上的連接器（請參閱圖12A至12B）。虛設導電連接器206B不將導電凸塊204接合至其他裝置（請參閱圖12A至12B）。導電連接器206可由導電材料（例如焊料）形成，並且可被稱為焊帽。可藉由蒸發、電鍍、印刷、焊料轉移、植球等方法，首先在導電凸塊204上形成焊料層來形成導電連接器206。焊料層形成後，即可執行回焊製程，以便將導電連接器206形塑為所需的凸塊形狀。導電凸塊204和導電連接器206共同形成為微凸塊。
圖11繪示了圖7的導電凸塊204和導電連接器206形成在接墊180上的結構，就如圖8至圖10的視圖中所詳細論述的。
在圖12A中，多個積體電路裝置50和一個或多個晶粒封裝100被貼合至中介物170。例如可使用拾取及放置工具，將積體電路裝置50和一個或多個晶粒封裝100貼合至內連線結構176。
各種積體電路裝置50可包括具有不同功能的多個裝置。內連線結構54和176是以物理及電性連接的方式，連接至積體電路裝置50和中介物170。積體電路裝置50可各自具有單一功能（例如邏輯裝置、記憶體晶粒等）或可具有多種功能（例如SoC）。在一實施例中，積體電路裝置50是記憶體裝置，像是HBM模組。積體電路裝置50也可包括邏輯裝置，例如CPU。
晶粒封裝100（圖6示例性的繪示了晶粒封裝100）包括多個裝置。晶粒封裝100的TDV 130和貫通孔112連接到導電連接器206，以物理和電性連接晶粒封裝100和中介物170。
一個或多個晶粒封裝100的背面設置為距離內連線結構176是高度H1 ，而積體電路裝置50的背面設置為距離內連線結構176是高度H2 。高度H1 和H2 可以是相同高度也可以是不同高度。在一些實施例中，高度H1 在約50μm至約800μm的範圍內，並且高度H2 在約50μm至約800μm的範圍內。
在中介物170是形成為一個晶圓的實施例中，可將多個積體電路裝置50和一個或多個晶粒封裝100貼合至晶圓的不同裝置區域中，並在隨後的步驟中將其單體化，以形成多個裝置封裝200。圖12B是圖12A的結構的示例性俯視圖，繪出區域200A和200B。區域200A和200B各自包含多個裝置50和單個晶粒封裝100。在一些實施例中，例如圖12B的實施例，積體電路裝置50對稱的排列在晶粒封裝100附近。在一些實施例中，積體電路裝置50不對稱的排列在晶粒封裝100附近。非對稱配置可讓積體電路裝置50更靠近晶粒封裝100的輸入/輸出（Input/Output，I/O）連接區域。
在實施例中，多個積體電路裝置50和一個或多個晶粒封裝100藉由包括導電凸塊202（也可稱為主動導電凸塊202）、主動導電凸塊204A、導電連接器206的連接，而貼合至內連線結構176。主動導電凸塊202電性和物理連接到內連線結構54，並且主動導電凸塊204A電性和物理連接到內連線結構176。導電連接器206接合主動導電凸塊202和204A。
內連線結構176上的虛設導電凸塊204B和虛設導電連接器206B不連接至接合至內連線結構176的多個積體電路裝置50或一個或多個晶粒封裝100。在所示實施例中，沒有對應的主動導電凸塊202被接合至虛設導電凸塊204B和虛設導電連接器206B。在一些實施例中，多個積體電路裝置50或一個或多個晶粒封裝100也可以包括接合至虛設導電凸塊204B和虛設導電連接器206B的虛設導電凸塊202。
圖13和圖14繪示了在接合晶粒封裝100和中介物170之前和之後的封裝300的一部分的簡化形式。在圖13示出了在被接合在一起之前，晶粒封裝100和中介物170的一部分。如圖13所示，晶粒封裝100翹曲或彎曲，使得在晶粒封裝100上的主動導電凸塊202上形成的主動導電連接器206A的接合表面，具有彎曲輪廓310A。在此範例中，晶粒封裝100是彎曲的，使得邊緣延伸得比中心區域高（有時稱為微笑輪廓（smiling profile））。在一些實施例中，晶粒封裝100是彎曲的，使得邊緣延伸得比中心區域低（有時稱為皺眉輪廓（frowning profile））（例如參閱圖17）。如果形成在中介物170上的主動導電凸塊204A上的主動導電連接器206A的接合表面不具有相似的彎曲輪廓，則在晶粒封裝100上的主動導電凸塊202上形成的主動導電連接器206A的接合表面的彎曲輪廓310A會引起諸如冷接頭或連接器損壞的問題。
如上所述且將於下詳細討論的是，虛設導電凸塊204B放置在中介物170的特定區域中，以增加導電凸塊204的那些區域中的圖案密度，如此一來，導電凸塊180中的圖案密度差異，改變了那些區域中的導電凸塊204的形成速率。形成速率的這項差異可用於調整中介物170的不同區域中的導電凸塊204的高度，以便處理中介物170及/或隨後貼合至中介物170的積體電路裝置50和晶粒封裝100的翹曲。因此，如圖13所示，在中介物170上的主動導電凸塊204A上形成的主動導電連接器206A的接合表面具有彎曲輪廓310B，該彎曲輪廓310B與晶粒封裝100的彎曲輪廓310A相似。在圖13所示的實施例中，越靠近中介物170的中心區域的中介物170上的主動導電凸塊204A高度越短，而越遠離該中心區域的主動導電凸塊204A高度越高。舉例而言，外部的主動導電凸塊204A可以形成為具有高度H3 ，中間的主動導電凸塊204A可以形成為具有高度H5 ，並且位於外部的主動導電凸塊和中間的主動導電凸塊之間的主動導電凸塊204A可以形成為具有高度H4 。在一些實施例中，高度H3 大於H4 和H5 ，高度H4 大於H5 且小於H3 ，並且高度H5 小於H4 和H3 。在一些其他的實施例中，這些高度的關係可以是相反的，使得H5 最大，而H3 最小。在其他的實施例中，高度H4 可以是最高的高度。
在一些實施例中，晶粒封裝100的下表面可以彎曲，使得晶粒封裝100的邊緣處的下表面比晶粒封裝100的中間區域的下表面高出距離D1 。在一些實施例中，距離D1 在20μm至50μm的範圍內。
在圖14中，藉由具有不同高度的中介物170上的主動導電凸塊204A，晶粒封裝100接合到中介物170，以解決晶粒封裝100的翹曲及/或彎曲問題。
圖15繪示了中介物170的一部分上的主動接墊180A和虛設接墊180B的示例性配置（因此也是主動導電凸塊204A和虛設導電凸塊204B的配置）。在所繪示的部分中，中介物170被劃分為區域402和404，其中區域402是可以形成虛設接墊180B的區域，而區域404是不能形成虛設接墊180B的區域。在一些實施例中，區域402與主動接墊180A之間相距距離D2 。在一些實施例中，距離D2 在15μm至50μm的範圍內。距離D2 可確保虛設導電凸塊204B確實與主動導電凸塊204A不發生干涉。儘管圖15將區域402和404繪示為棋盤圖案，但也可以將區域402繪示成其他圖案，例如列、行、同心圓等或其組合，而這些圖案皆在本發明實施例的範圍內。
圖16A、16B、16C、16D是區域200A或200B（參見圖12B）的配置的實施例，以使主動導電凸塊204A實現圖13和圖14中的微笑曲線輪廓310B。如圖16A所示，在晶粒封裝100的佔用區域中的主動接墊180A和虛設接墊180B的配置是設置成多個區或區域（在圖16A至圖16D中標示為區域1至區域3），使得虛設接墊180B的配置在每個不同區域中可以是不同的。在圖16A至圖16D中，晶粒封裝100的佔用區域內的虛設接墊180B被配置為分成三個區域。區域1和2由同心圓形成，該同心圓以晶粒封裝100的佔用區域的中心點為中心，區域3是晶粒封裝100的佔用區域的其餘部分。在圖16A至圖16D中，區域1位於晶粒封裝100的佔用區域的中心，區域2是圍繞區域1的環，區域3是晶粒封裝100的佔用區域的其餘部分，不在區域1或區域2中。
如上所述，主動接墊180A和虛設接墊180B的圖案密度影響了主動導電凸塊204A的形成高度，使得主動接墊180A和虛設接墊180B的較高圖案密度導致較短的主動導電凸塊204A。為了獲得圖13和圖14中的微笑曲線輪廓310B（即較高的主動導電凸塊204A朝向晶粒封裝100的佔用區域的外邊緣，而較短的主動導電凸塊204A則位於晶粒封裝100的佔用區域的中間區域中），主動接墊180A和虛設接墊180B需在晶粒封裝100的佔用區域的中間區域中呈現更高的圖案密度。在此實施例中，在區域1中的主動接墊180A和虛設接墊180B的圖案密度皆大於在區域2和區域3中的圖案密度，在區域3中的主動接墊180A和虛設接墊180B的圖案密度皆小於在區域2和區域1中的圖案密度，而在區域2中的主動接墊180A和虛設接墊180B的圖案密度是介於在區域2和區域1中之間的圖案密度。
在圖16A中，虛設接墊180B是圓形的，並且在不同區域中具有不同的尺寸。舉例而言，虛設接墊180B在區域1中尺寸最大，在區域2中較小，而在區域3中最小（或不存在）。圖16B繪示了與圖16A類似的配置，但虛設接墊180B具有不同的形狀且為正方形或矩形。
在圖16C中，虛設接墊180B是圓形的，並且在每個區域中的尺寸相似，而不同區域中，在每個區域402中的虛設接墊180B數目是不同的。舉例而言，區域1中的每個區域402具有最多的虛設接墊180B，區域2中的每個區域402具有的虛設接墊180B數少於區域1，而區域3中的每個區域402具有的虛設接墊180B（可能為零）少於區域2。圖16D繪示了與圖16C類似的配置，但虛設接墊180B具有不同的形狀且為正方形或矩形。
儘管僅示出了四個具有各種尺寸和形狀的配置，但是本發明實施例預期虛設接墊180B可呈現更多尺寸和形狀，以實現區域1-3的不同圖案密度的目標。此外，晶粒封裝100的佔用區域（或甚至整個中介物170的佔用區域）可以分割為更多或更少的區域，例如2個區域、4個區域、5個區域或更多個區域。
儘管已將虛設接墊、虛設凸塊、虛設連接器描述為僅位於晶粒封裝100的佔用區域內，但在一些實施例中，是存在虛設接墊、虛設凸塊、虛設連接器的。舉例而言，虛設接墊、虛設凸塊、虛設連接器皆可存在於積體電路裝置50的佔用區域之內或存在於積體電路裝置50和晶粒封裝100的佔用區域之外。
在一些實施例中，虛設接墊、虛設凸塊、虛設連接器只形成在晶粒封裝100的佔用區域之內，則積體電路裝置50的佔用區域之內的導電凸塊204和202形成為具有相同的高度，而晶粒封裝100的佔用區域之內的導電凸塊204及/或202形成為具有不同的高度。
圖17繪示了在接合晶粒封裝100和中介物170之前的封裝300的一部分的簡化形式。本實施例具有皺眉曲線輪廓312A和312B，除此之外，本實施例與圖13和圖14中的實施例相似。舉例而言，在本實施例中，較高的主動導電凸塊204A位於中介物170的中心區域，而較短的主動導電凸塊204A則位於的中心區域的外面。關於本實施例的細節，與上述實施例相類似的描述，在此不再重述。
圖18A、18B、18C、18D是區域200A或200B（參見圖12B）的配置的實施例，以使主動導電凸塊204A實現圖17中的皺眉曲線輪廓312B。除了本實施例具有皺眉曲線輪廓312A和312B之外，本實施例與圖16A至圖16B中的實施例相似。關於本實施例的細節，與上述實施例相類似的描述，在此不再重述。
為了獲得圖17中的皺眉曲線輪廓312B（即較高的主動導電凸塊204A位於晶粒封裝100的佔用區域的中間區域中，而較短的主動導電凸塊204A則位於晶粒封裝100的佔用區域的中間區域之外），主動接墊180A和虛設接墊180B需在晶粒封裝100的佔用區域的中間區域之外，呈現更高的圖案密度。在此實施例中，在區域1中的主動接墊180A和虛設接墊180B的圖案密度小於在區域2和在區域3中的圖案密度，在區域3中的主動接墊180A和虛設接墊180B的圖案密度大於在區域2和區域1中的圖案密度，而在區域2中的主動接墊180A和虛設接墊180B的圖案密度是介於在區域2和區域1中之間的圖案密度。
在圖18A中，虛設接墊180B是圓形的，並且在不同區域中具有不同的尺寸。舉例而言，虛設接墊180B在區域3中尺寸最大，在區域2中較小，而在區域1中最小（或不存在）。圖18B繪示了與圖18A類似的配置，但虛設接墊180B具有不同的形狀且為正方形或矩形。
在圖18C中，虛設接墊180B是圓形的，並且在每個區域中的尺寸相似，而不同區域中，在每個區域402中的虛設接墊180B數目是不同的。舉例而言，在區域3中的每個區域402具有最多的虛設接墊180B，在區域2中的每個區域402具有的虛設接墊180B數少於區域3，而在區域1中的每個區域402具有的虛設接墊180B（可能為零）少於區域2。圖18D繪示了與圖16C類似的配置，但虛設接墊180B具有不同的形狀且為正方形或矩形。
中介物170具有不同高度的連接器，其可解決積體電路晶粒及/或晶圓的翹曲問題。在一些實施例中，這些連接器是由電鍍方法所形成的微凸塊。在一些實施例中，藉由在形成過程中，藉由在積體電路裝置和晶圓之一或兩者上插入虛設微凸塊，來調整某些區域中的微凸塊的圖案密度，即可獲得不同高度的微凸塊。舉例而言，如果第一區域需具有比第二區域更短的微凸塊高度，則可藉由在第一區域中插入虛設微凸塊來增加第一區域中的微凸塊的圖案密度。不同高度連接器的這種形成方式，可防止冷接頭或連接器損壞，從而可以提高裝置的可靠性和裝置良率。
在圖19中，將底部填充膠材料210點膠在積體電路裝置50與晶粒封裝100以及內連線結構176之間。底部填充膠材料210圍繞主動和導電凸塊202和204A/204B以及主動和虛設導電連接器206A/206B。底部填充膠材料210具有沿著積體電路裝置50和晶粒封裝100的側面向上延伸的填角（fillet）。底部填充膠材料210可以是任何可接受的材料，例如聚合物、環氧樹脂、模製底部填充膠等。底部填充膠材料210可藉由毛細流動製程形成。底部填充膠材料210將虛設導電凸塊204B和虛設導電連接器206B與晶粒封裝100分離並隔離開來。
在圖20中，在各個構件上形成密封體212。密封體212可以是模塑化合物、環氧樹脂等，並且可藉由壓縮模製、轉移模製等方法來塗覆密封體212。密封體212可形成在內連線結構176上方，使得積體電路裝置50、晶粒封裝100、底部填充膠材料210被掩埋或覆蓋。然後使密封體212固化。在一些實施例中，使密封體212變薄，如此一來，密封體212、積體電路裝置50、晶粒封裝100的頂面是齊平的。
在圖21中，將中間結構翻轉以準備對基板172的背面進行處理。可將中間結構放置在承載基板214上或其他合適的支撐結構上，以用於後續處理。舉例而言，承載基板214可以貼合至密封體212。中間結構可以藉由離型層216貼合至承載基板214。離型層216可以由基於聚合物的材料形成，其可以與承載基板214一起從上層結構中去除。在一些實施例中，承載基板214例如是塊狀半導體或玻璃基板的基板，並且可以具有任何厚度，例如約300mm的厚度。在一些實施例中，離型層216是環氧基熱離型材料，其在加熱時會失去黏性，例如光熱轉換（Light-To-Heat-Conversion，LTHC）離型塗層。
在圖22中，使基板172變薄以暴露出貫通孔174。在一些實施例中，基板172和貫通孔174的暴露出來的表面是齊平的。可以藉由薄化製程，像是研磨製程、化學機械拋光（Chemical-Mechanical Polish，CMP）或其他可接受的去除製程來使貫通孔174暴露出來。在一些實施例中（未繪示），可執行一凹陷製程使基板172凹陷，如此一來貫通孔174即可從基板172的背面突出。此凹陷製程例如可以是合適的回蝕製程。可在基板172的背面上形成絕緣層，該絕緣層圍繞並保護貫通孔174的突出部分。
在圖23中，重佈線結構220形成在基板172的背面上方。重佈線結構220包括介電層222、多個UBM 224以及多個導電凸塊226。重佈線結構220是一範例。可在重佈線結構220中形成更多或更少的介電層和導電層。如要形成更多的介電層和金屬化圖案，則可重複執行將於下方論述的步驟和製程。
在形成重佈線結構220的一範例中，介電層222沉積在基板172和貫通孔174的背面上。在一些實施例中，介電層222例如由聚苯並噁唑（polybenzoxazole，PBO）、聚酰亞胺、苯並環丁烯（benzocyclobutene，BCB）等的光敏材料形成，其可以使用微影罩幕來圖案化。介電層222可藉由旋轉塗佈、疊層、CVD等或其組合來形成。然後圖案化介電層222。圖案化形成多個開口，以暴露出貫通孔174的一部分。可藉由可接受的製程來形成圖案，例如當介電層222是光敏材料時，可將介電層222曝露於光線或是例如使用非等向性蝕刻來進行蝕刻。如果介電層222是光敏材料，則可在曝光之後使介電層222顯影。
然後形成UBM 224。UBM 224包括在介電層222的主表面上並沿著主表面延伸的導線。UBM 224更包括延伸穿過介電層222以物理和電性連接到貫通孔174的導電通孔。晶種層（未示出）形成在介電層222上方和穿過介電層222延伸的開口中。在一些實施例中，晶種層是金屬層，其可以是單層或包括由不同材料形成的多個子層的複合層。在一些實施例中，晶種層包括鈦層和在鈦層上方的銅層。可以使用例如PVD等形成晶種層。
然後，在晶種層上形成並圖案化介電層228。在一些實施例中，介電層228例如光阻劑、聚酰亞胺、BCB等的光敏材料形成，其可以使用微影罩幕來圖案化。介電層228可藉由旋轉塗佈、疊層、CVD等或其組合來形成，並且可曝露於光線中來進行圖案化。介電層228的圖案對應於UBM 224。圖案化形成穿過介電層228的開口，以暴露出晶種層。然後在介電層228的開口中及在晶種層的被暴露部分上形成導電材料。例如可藉由電鍍、無電鍍等的鍍覆方式來形成導電材料。導電材料可以包括金屬，例如銅、鈦、鎢、鋁等。導電材料和晶種層下方部分的組合，形成UBM 224。
然後形成導電凸塊226。在UBM 224和介電層228上形成並圖案化介電層230。介電層230可類似於介電層228。介電層230可曝露於光線以用於圖案化。介電層230的圖案對應於導電凸塊226。圖案化形成穿過介電層230的開口，以暴露出UBM 224的一部分。然後在介電層230的開口中及在UBM 224的被暴露部分上形成導電材料。例如可藉由電鍍、無電鍍覆等的鍍覆方式來形成導電材料。導電材料可以包括金屬，例如銅、鈦、鎢、鋁等。因為UBM 224被介電層230中的開口暴露出來，所以在開口中沒有形成晶種層，而是在UBM 224上直接且物理地形成了導電材料。藉由與用於形成UBM 224的導電材料的電鍍製程相同的電鍍製程參數執行電鍍製程，來形成導電材料。值得注意的是，在UBM 224和導電凸塊226之間沒有形成晶種層，而是藉由使用UBM 224的晶種層來執行電鍍製程，來形成導電凸塊226的導電材料。
在圖24中，導電連接器232形成在導電凸塊226上。導電連接器232可藉由焊料等的導電材料形成，並且可藉由蒸發、電鍍、印刷、焊料轉移、焊球放置等方法，首先在導電凸塊226上形成焊料層來形成導電連接器232。焊料層形成後，即可執行回焊製程，以便將導電連接器232形塑為所需的凸塊形狀。導電連接器232可以是球柵陣列（Ball Grid Array，BGA）連接器、焊球、受控塌陷晶片連接（Controlled Collapse Chip Connection，C4）凸塊等。UBM 224使導電連接器232從貫通孔174橫向偏移。因為在UBM 224和導電凸塊226之間沒有形成晶種層，所以導電凸塊226是從UBM 224連續延伸到導電連接器232的導電材料。
在圖25中，執行載體剝離，以將承載基板214與密封體212分離（剝離）。根據一些實施例，剝離包括將雷射光或紫外線（ultraviolet，UV）光等投射在離型層216上，使得離型層216在光的熱能下分解，並且可以去除承載基板214。然後將此結構翻轉並放置在膠帶上。隨後，中介物170沿著相鄰裝置區域之間的劃線區域被單體化，以形成裝置封裝200。可透過鋸切、切割等方式來進行單體化。單體化的結果是，中介物170和密封體212的邊緣是連續的。換句話說，中介物170的外側壁具有與密封體212的外側壁相同的寬度。介電層228和介電層230可以可選地在載體剝離之前或之後去除。
在圖26中，藉由將裝置封裝200安裝至封裝基板410來形成裝置封裝300。封裝基板410可由矽、鍺等的半導體材料製成，或者也可使用像是矽鍺、碳化矽、砷化鎵、砷化銦、磷化銦、碳化矽鍺、磷化砷化鎵、磷化銦鎵、以上的組合等的化合物材料。此外，封裝基板410可以是SOI基板。在一些實施例中， SOI基板包括一層半導體材料，例如磊晶矽、鍺、矽鍺、SOI或以上的組合。在替代實施例中，封裝基板410是基於例如是玻璃纖維增強樹脂核心的絕緣核心。一種示例性核心材料是玻璃纖維樹脂，例如FR4。核心材料的替代材料包括雙馬來酰亞胺三嗪（bismaleimide-triazine，BT）樹脂或者其他印刷電路板（Printed Circuit Board，PCB）材料或薄膜。味之素增補膜（Ajinomoto Build-up Film，ABF）之類的增補膜或其他疊層可用於封裝基板410。
封裝基板410可包括主動和被動裝置。所屬技術領域中具有通常知識者應知曉，可使用電晶體、電容器、電阻器、以上組合等之類的多種元件來產生裝置封裝400的設計所需的結構和功能要求。可以使用任何合適的方法來形成裝置。
封裝基板410還可包括金屬化層和通孔以及在金屬化層和通孔上方的接合墊412。金屬化層可形成在主動與被動裝置上方，並被設計用來連接各種裝置以形成功能電路。金屬化層可以由介電（例如低介電常數（low-K）介電材料）和導電材料（例如銅）以層層交替的方式排列形成，並且具有使導電材料層互連的通孔，同時可藉由任何合適的製程（諸如沉積、鑲嵌、雙鑲嵌等）形成。在一些實施例中，封裝基板410大體上沒有主動和被動裝置。
導電連接器232被回焊，以將裝置封裝200貼合至接合墊412，從而將中介物170接合到封裝基板410。導電連接器232將包括封裝基板410中的金屬化層的封裝基板410電性和物理耦接到裝置封裝200。如上所述，以物理的方式分開部分的底部填充膠材料210，可減少裝置封裝200的翹曲。封裝基板410和中介物170之間的直立（Stand-off）高度變化因此可減少，如此一來，在回焊導電連接器232時可避免的冷接頭和橋接。從而可以提高製造良率。
導電連接器232可在其回焊之前，在其上形成環氧樹脂助焊劑，在將裝置封裝200貼合至封裝件基板410之後，剩餘的環氧樹脂助焊劑的環氧樹脂部分中的至少一些會殘留下來。這些剩餘的環氧樹脂部分可以用作底部填充膠使用，以減少應力並保護由導電連接器232的回焊形成的接頭。
在一些實施例中，在安裝到封裝基板410上之前，將被動裝置（例如表面安裝元件（Surface Mount Device，SMD），未繪示）貼合至裝置封裝400（例如接合至接合墊412）。在這樣的實施例中，主動裝置可以與導電連接器232接合到封裝基板410的相同表面。
底部填充膠414可形成在裝置封裝200和封裝基板410之間且圍繞導電連接器232、導電凸塊226及UBM 224。由於UBM 224的形成製程，UBM 224在形成之後沒有被介電層或絕緣層包圍。因此底部填充膠414直接接觸並沿UBM 224的側面延伸。此外，底部填充膠414是從封裝基板410延伸到介電層222的連續材料。底部填充膠414可以在貼合裝置封裝200之後藉由毛細流動製程形成，或者可以在貼合裝置封裝200之前，藉由合適的沉積方法形成。
可選地，散熱器可以被貼合至裝置封裝400，從而覆蓋並圍繞裝置封裝200。散熱器可以由具有高導熱係數的材料形成，例如鋼、不銹鋼、銅或其組合等。散熱器保護裝置封裝200，並形成導熱路徑，以傳導來自裝置封裝400各個構件的熱量。
圖27繪示了在接合晶粒封裝100和中介物170之前的封裝300的一部分的簡化形式。本實施例與圖13和圖14中的實施例相似，但本實施例包括了設置於晶粒封裝100上的虛設導電凸塊202A，而不是設置於中介物170上的虛設導電凸塊204A。圖13至圖15、圖16A至圖16D、圖17、圖18A至圖18D中公開的主動和虛設凸塊的各種配置皆適用於圖27中的實施例。關於本實施例的細節，與上述實施例相類似的描述，在此不再重述。
圖28繪示了在接合晶粒封裝100和中介物170之前的封裝300的一部分的簡化形式。本實施例與圖13、圖14、圖27中的實施例相似，但本實施例包括了設置於晶粒封裝100上的虛設導電凸塊202A以及設置於中介物170上的虛設導電凸塊204A。圖13至圖15、圖16A至圖16D、圖17、圖18A至圖18D中公開的主動和虛設凸塊的各種配置皆適用於圖28中的實施例。關於本實施例的細節，與上述實施例相類似的描述，在此不再重述。
也可以包括其他特徵和製程。舉例而言，可以包括測試結構，以輔助3D封裝或3DIC裝置的驗證測試。測試結構可包括例如形成在重佈線層中或在基板上的測試墊，該些測試墊讓3D封裝或3DIC的測試得以進行，也使得探針及/或探針卡等得以使用。驗證測試可以在中間結構以及最終結構上執行。此外，在此公開的結構和方法可以與結合了已知良品的中間驗證的測試方法配合使用，以增加良率並降低成本。
本文描述的實施例具有以下優點。根據一些實施例，實施例包括具有不同高度的連接器，其可解決積體電路晶粒及/或中介物的翹曲問題。在一些實施例中，這些連接器是由電鍍方法所形成的微凸塊。在一些實施例中，藉由在形成過程中，利用在積體電路裝置和晶圓之一或兩者上插入虛設微凸塊，來調整某些區域中的微凸塊的圖案密度，即可獲得不同高度的微凸塊。舉例而言，如果第一區域需具有比第二區域更短的微凸塊高度，則可藉由在第一區域中插入虛設微凸塊來增加第一區域中的微凸塊的圖案密度。不同高度連接器的這種形成方式，可防止冷接頭或連接器損壞，從而可以提高裝置的可靠性和裝置良率。
此外，本文描述的封裝，允許具有不同功能或技術的裝置合併在一起，這樣一來可增加功能並降低成本。透過接合半導體裝置以在封裝內形成接合的晶粒封裝（例如系統晶片（System-on-a-Chip，SoC）等），可以減小封裝的尺寸。封裝可包括接合的晶粒封裝和其他半導體晶粒，例如記憶體晶粒、I/O晶粒等。可以將接合的晶粒封裝和半導體晶粒連接到相同的重佈線結構，如此即可使接合的晶粒封裝和半導體晶粒之間的佈線更短。重佈線結構可以具有不同尺寸的通孔，以連接到不同的裝置，例如連接到接合的晶粒封裝的通孔或是連接到半導體晶粒的接觸墊。在與裝置的連接（例如貫通孔或導電墊）的間距較小的情況下，重佈線結構的單個通孔可以連接至多個連接。以這種方式使用的接合的晶粒封裝或較短的佈線，可改善封裝的高頻或高速操作。接合的晶粒封裝可包括多個半導體裝置或半導體裝置堆疊，如此可降低成本，並提供更大的設計靈活性。在某些情況下，在接合的晶粒封裝中使用不同的保護材料，可減少缺陷（例如CTE不匹配或摻雜劑擴散到接合的晶粒封裝中）發生的機會。
在一實施例中，中介物具有第一側，第一積體電路裝置透過第一組導電連接器貼合至中介物的第一側，每一個第一組導電連接器具有第一高度。此封裝也包括第一晶粒封裝，透過第二組導電連接器貼合至中介物的第一側。第二組導電連接器包括第一導電連接器以及第二導電連接器。第一導電連接器具有第二高度，第二導電連接器具有第三高度，第三高度不同於第二高度。封裝更包括第一虛設導電連接器，位於中介物的第一側與第一晶粒封裝之間。封裝也包括底部填充膠，設置於第一積體電路裝置與第一晶粒封裝之下。封裝也包括密封體，設置於第一積體電路裝置與第一晶粒封裝周圍。
實施例可包括以下一個或多個特徵。在封裝中，第一晶粒封裝包括第一晶粒、第一介電材料及第一貫通孔。第一晶粒透過金屬對金屬接合以及介電質對介電質接合與第二晶粒連接。第一介電材料位於第一晶粒以及第二晶粒上方，其中第一介電材料圍繞所述第一晶粒。第一貫通孔延伸穿過第一介電材料，其中第一貫通孔連接至第一晶粒。第一晶粒封裝更包括延伸穿過第一介電材料的第二貫通孔，其中第二貫通孔連接至第二晶粒。第一晶粒封裝更包括延伸穿過第一介電材料的第三貫通孔，其中第三貫通孔連接至第二晶粒。第一晶粒封裝在中介物的第一側的佔用區域包括第一區、第二區及第三區。第一導電連接器以及第一虛設導電連接器位於第一區。第二導電連接器位於第二區，並且第二高度小於第三高度。第二區圍繞第一區。第一區圍繞第二區。第二區包括第二虛設導電連接器，並且第三區沒有虛設導電連接器。封裝更包括第三導電連接器與第四導電連接器，第三導電連接器位於第二區。第三導電連器具有比第二高度高的高度。第四導電連接器位於第三區，並且第四導電連器具有比第三導電連接器高的高度。
在一實施例中，在中介物的第一側形成第一重佈線結構。第一重佈線結構包括位於多個介電層中的多條金屬線與多個通孔。第一重佈線結構包括位於所述第一重佈線結構的第一表面上的多個主動接墊與多個虛設接墊。多個主動接墊電性耦接到多條金屬線與多個通孔，多個虛設接墊電性隔離於多條金屬線與多個通孔。此方法更包括在多個主動接墊上形成多個主動連接器。此方法更包括在多個虛設接墊上形成多個虛設連接器。此方法更包括將第一積體電路裝置貼合至多個主動連接器的第一子集。此方法更包括將第二積體電路裝置貼合至多個主動連接器的第二子集。多個虛設連接器位於中介物以及第二積體電路裝置之間。此方法更包括在中介物的第一側形成底部填充膠。底部填充膠具有位於第一積體電路裝置之下的第一部分以及位於第二積體電路裝置之下的第二部分。此方法更包括透過密封體密封第一積體電路裝置以及第二積體電路裝置。
實施例可包括以下一個或多個特徵。此方法更包括形成第二積體電路裝置，形成方式包括透過金屬對金屬接合以及介電質對介電質接合將第一晶粒與第二晶粒接合；在第一晶粒以及第二晶粒上方形成第一介電材料，第一介電材料圍繞第一晶粒；以及形成延伸穿過第一介電材料的第一貫通孔，第一貫通孔連接至第一晶粒。第二積體電路裝置在第一重佈線結構上的佔用區域包括第一區、第二區及第三區。第一區及第二區包括多個虛設連接器，第一區、第二區及第三區包括多個主動連接器，並且第三區沒有虛設導電連接器。在第三區中的多個主動連接器高於第一區及第二區中的多個主動連接器。在第一區中的多個主動與虛設連接器具有第一圖案密度。在第三區中的多個主動連接器具有第二圖案密度，並且第二圖案密度小於第一圖案密度。第二區圍繞第一區，並且其中第二區將第一區與第三區分隔開來。多個第一主動連接器的第一子集具有相同的高度，其中多個主動連接器的第二子集具有多種高度。此方法更包括形成延伸貫穿中介物的基板的多個貫通孔，第一重佈線結構電性耦接至多個貫通孔。
在一實施例中，透過第一組連接器將第一積體電路裝置貼合至中介物的第一側，第一組連接器具有相同高度。此方法更包括透過第二組連接器將晶粒封裝貼合至中介物的第一側，第二組連接器具有多種高度。第一組虛設連接器位於中介物與晶粒封裝之間。第一組虛設連接器電性隔離於第一晶粒封裝與第一積體電路裝置。此方法更包括在第一積體電路裝置以及晶粒封裝之下在中介物的第一側形成底部填充膠。此方法更包括透過密封體密封第一積體電路裝置以及晶粒封裝。
實施例可包括以下一個或多個特徵。在此方法中，晶粒封裝在中介物的第一側的佔用區域包括第一區、第二區及第三區。第二區圍繞第一區，並且第二區位於第一區以及第三區之間。第一區及第二區包括第一組虛設連接器，並且第一區、第二區及第三區包括多個主動連接器。
以上概述數個實施例的特徵，以讓所屬技術領域中具有通常知識者可以更好地理解本發明實施例的各面向。所屬技術領域中具有通常知識者應理解，本發明實施例可以用來作為設計或修改其他製程和結構的基礎，以實現與本文說明的實施例相同的目的及/或達成相同的優點。所屬技術領域中具有通常知識者應知曉，等效的作法並不脫離本發明實施例的精神和範圍，因此在不背離本發明實施例的精神和範圍的情況下，可以進行各種改變，替換、變更。
50:積體電路裝置 52、172:基板 54、176:內連線結構 100:晶粒封裝 102:半導體裝置 104:第一基底 106:第一金屬化層 108:接合層（第一接合層） 110:接合金屬 112:基板通孔 120:第一晶圓 122:第二基板 124:第二金屬化層 126:第二接合層 128:第二接合金屬 130:介電通孔 132、178、222:介電層 170:中介物 174:貫通孔 180、180A、180B:金屬化圖案 180A:主動接墊 180B:虛設接墊 182:光阻材料 200、400: 裝置封裝 200A、200B:區域 202、202A、202B、204、204A、204B、226:導電凸塊 206、206A、206B、232:導電連接器 210:底部填充膠材料 212:密封體 214:承載基板 216:離型層 220:重佈線結構 222、228、230:介電層 224:UBM 300:封裝 310A、310B:彎曲輪廓 310B:微笑曲線輪廓 312A、312B:皺眉曲線輪廓 402、404、200A、200B:區域 410:封裝基板 412:接合墊 414:底部填充膠 D1 、D2 :距離 H1 、H2 、H3 、H4 、H5 :高度
根據以下詳細描述，同時參閱附圖，即可最佳地理解本發明實施例的各個面向。應當理解的是，根據本領域的標準作法，各種特徵未按比例繪製。事實上，為了清楚起見，可以任意地增加或減小各種特徵的尺寸。 圖1是根據一些實施例繪示的積體電路晶粒的剖視圖。 圖2至圖6是根據一些實施例繪示的形成晶粒封裝的製程期間的中間步驟的剖視圖。 圖7至圖12B以及圖19至圖26是根據一些實施例，在形成半導體裝置的製程期間的中間步驟的剖視圖和俯視圖。 圖13至圖18D是根據一些實施例，主動與虛設連接器的配置的剖視圖和俯視圖。 圖27至圖28是根據一些實施例，主動與虛設連接器的配置的剖視圖。
100:晶粒封裝
170:中介物
202、204A、204B:導電凸塊
206A、206B:導電連接器
300:封裝

Claims (20)

  1. 一種封裝，包括： 中介物，具有第一側； 第一積體電路裝置，透過第一組導電連接器貼合至所述中介物的所述第一側，所述第一組導電連接器的每一個具有第一高度； 第一晶粒封裝，透過第二組導電連接器貼合至所述中介物的所述第一側，所述第二組導電連接器包括第一導電連接器以及第二導電連接器，所述第一導電連接器具有第二高度，所述第二導電連接器具有第三高度，所述第三高度不同於所述第二高度； 第一虛設導電連接器，位於所述中介物的所述第一側與所述第一晶粒封裝之間； 底部填充膠，設置於所述第一積體電路裝置與所述第一晶粒封裝之下；以及 密封體，設置於所述第一積體電路裝置與所述第一晶粒封裝周圍。
  2. 如請求項1所述的封裝，其中所述第一晶粒封裝包括： 第一晶粒，透過金屬對金屬接合以及介電質對介電質接合與第二晶粒連接； 第一介電材料，位於所述第一晶粒以及所述第二晶粒上方，其中所述第一介電材料圍繞所述第一晶粒；以及 第一貫通孔，延伸穿過所述第一介電材料，其中所述第一貫通孔連接至所述第一晶粒。
  3. 如請求項2所述的封裝，其中所述第一晶粒封裝更包括延伸穿過所述第一介電材料的第二貫通孔，其中所述第二貫通孔連接至所述第二晶粒。
  4. 如請求項2所述的封裝，其中所述第一晶粒封裝更包括延伸穿過所述第一介電材料的第三貫通孔，其中所述第三貫通孔連接至所述第二晶粒。
  5. 如請求項1所述的封裝，其中所述第一晶粒封裝在所述中介物的所述第一側的佔用區域包括第一區、第二區、第三區，所述第一導電連接器以及所述第一虛設導電連接器位於所述第一區，所述第二導電連接器位於所述第二區，並且所述第二高度小於所述第三高度。
  6. 如請求項5所述的封裝，其中所述第二區圍繞所述第一區。
  7. 如請求項5所述的封裝，其中所述第一區圍繞所述第二區。
  8. 如請求項5所述的封裝，其中所述第二區包括第二虛設導電連接器，並且所述第三區沒有虛設導電連接器。
  9. 如請求項8所述的封裝，更包括： 第三導電連接器，位於所述第二區，所述第三導電連器具有比所述第二高度高的高度；以及 第四導電連接器，位於所述第三區，所述第四導電連器具有比所述第三導電連接器高的高度。
  10. 如請求項1所述的封裝，其中所述底部填充膠將所述第一虛設導電連接器與所述第一晶粒封裝分隔開來。
  11. 一種方法，包括： 在中介物的第一側形成第一重佈線結構，所述第一重佈線結構包括位於多個介電層中的多條金屬線與多個通孔，所述第一重佈線結構包括位於所述第一重佈線結構的第一表面上的多個主動接墊與多個虛設接墊，所述主動接墊電性耦接到所述金屬線與所述通孔，所述虛設接墊電性隔離於所述金屬線與所述通孔； 在所述主動接墊上形成多個主動連接器； 在所述虛設接墊上形成多個虛設連接器； 將第一積體電路裝置貼合至所述主動連接器的第一子集； 將第二積體電路裝置貼合至所述主動連接器的第二子集，所述虛設連接器位於所述中介物以及所述第二積體電路裝置之間； 在所述中介物的所述第一側形成底部填充膠，所述底部填充膠具有位於所述第一積體電路裝置之下的第一部分以及位於所述第二積體電路裝置之下的第二部分； 透過密封體密封所述第一積體電路裝置以及所述第二積體電路裝置。
  12. 如請求項11所述的方法，更包括： 形成所述第二積體電路裝置，包括： 透過金屬對金屬接合以及介電質對介電質接合將第一晶粒與第二晶粒接合； 在所述第一晶粒以及所述第二晶粒上方形成第一介電材料，所述第一介電材料圍繞所述第一晶粒；以及 形成延伸穿過所述第一介電材料的第一貫通孔，所述第一貫通孔連接至所述第一晶粒。
  13. 如請求項11所述的方法，其中所述第二積體電路裝置在所述第一重佈線結構上的佔用區域包括第一區、第二區、第三區，所述第一區及所述第二區包括多個虛設連接器，所述第一區、所述第二區及所述第三區包括多個主動連接器，並且所述第三區沒有虛設導電連接器。
  14. 如請求項13所述的方法，其中在所述第三區中的所述主動連接器高於所述第一區及所述第二區中的所述主動連接器。
  15. 如請求項13所述的方法，其中在所述第一區中的所述主動連接器與所述虛設連接器具有第一圖案密度，在所述第三區中的所述主動連接器具有第二圖案密度，並且所述第二圖案密度小於所述第一圖案密度。
  16. 如請求項13所述的方法，其中所述第二區圍繞所述第一區，並且所述第二區將所述第一區與所述第三區分隔開來。
  17. 如請求項11所述的方法，其中所述第一主動連接器的所述第一子集具有相同的高度，並且所述主動連接器的所述第二子集具有多種高度。
  18. 如請求項11所述的方法，更包括： 形成延伸貫穿所述中介物的基板的多個貫通孔，所述第一重佈線結構電性耦接至所述貫通孔。
  19. 一種方法，包括： 透過第一組連接器將第一積體電路裝置貼合至中介物的第一側，所述第一組連接器具有相同高度； 透過第二組連接器將晶粒封裝貼合至所述中介物的所述第一側，所述第二組連接器具有多種高度，第一組虛設連接器位於所述中介物與所述晶粒封裝之間，所述第一組虛設連接器電性隔離於所述第一晶粒封裝與所述第一積體電路裝置； 在所述第一積體電路裝置以及所述晶粒封裝之下在所述中介物的所述第一側形成底部填充膠；以及 透過密封體密封所述第一積體電路裝置以及所述晶粒封裝。
  20. 如請求項19所述的方法，其中所述晶粒封裝在所述中介物的所述第一側的佔用區域包括第一區、第二區、第三區，所述第二區圍繞所述第一區，所述第二區位於所述第一區以及所述第三區之間，所述第一區及所述第二區包括所述第一組虛設連接器，並且所述第一區、所述第二區及所述第三區包括多個主動連接器。
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