TW202209138A - Biometric sensing device and biometric sensing group - Google Patents

Abstract

A biometric sensing device including a sensing unit layer, a first light blocking layer, and a second light blocking layer is provided. The first light blocking layer is disposed on the sensing unit layer, and includes a first hole and a first light blocking portion. The first hole has an aperture Wn, and the first light blocking portion has a width Gn. The second light blocking layer is disposed on the first light blocking layer, and includes a second hole and a second light blocking portion. There is a distance H_n between the first light blocking layer and the second light blocking layer. There is an angle α between a central axis of the second hole and light, and 0°＜α＜60°. When the central axis of the second hole overlaps a central axis of the first hole, Wn, Gn, H_n , and α have the following relationship in formula 1: 2H_n *│tan(α)│ ≤ (2Gn+Wn). When the central axis of the second hole fails to overlap the central axis of the first hole, Wn, Gn, H_n , and α have the following relationship in formula 2: 2H_n *│tan(α)│ ≤(Gn+Wn).

Description

Biometric sensing device and biometric sensing population

The present invention relates to a sensing device, and more particularly, to a biometric sensing device and biometric sensing population.

In recent years, biometric sensing devices including biometric identification systems (such as fingerprints or iris) have been widely used in portable electronic devices. Taking the under-screen optical sensor as an example, a miniature optical imaging device is arranged below the screen of the portable electronic device, and an image of an object pressed above the screen is captured through a part of the light-transmitting area of the screen.

In order to successfully identify biometrics, biometric sensing devices are generally equipped with an opto-mechanical structure layer to focus the incident light and improve its collimation; however, the spacing between the elements is becoming more and more with the development of technology. In small cases, the phenomenon of optical crosstalk (crosstalk) still inevitably occurs, which will cause the image resolution of the sensing to be poor. Furthermore, when a large number of biometric sensing devices are fabricated on a motherboard, the biometric sensing devices located at the edge of the motherboard are prone to process shifts, which makes optical crosstalk more likely to occur in the biometric sensing devices.

The present invention provides a biometric sensing device, which can avoid the occurrence of optical crosstalk and has good identification performance.

The biometric sensing device of the present invention includes a sensing element layer, a first light shielding layer and a second light shielding layer. The sensing element layer is disposed on the substrate and includes a plurality of sensing elements for sensing light. The first light shielding layer is disposed on the sensing element layer and includes a plurality of first holes, wherein at least one of the plurality of first holes has a hole width W _n , and there is a first hole between two adjacent first holes. A light-shielding portion, and the width of the first light-shielding portion is Gn. The second light-shielding layer is disposed on the first light-shielding layer and includes a plurality of second holes, wherein a second light-shielding portion is arranged between two adjacent second holes, and the second light-shielding portion corresponds to the first light-shielding portion. In the normal direction of the substrate, the distance between the first light-shielding portion and the second light-shielding portion is H _n , wherein the angle between the central axis of one of the plurality of second holes and the light is α, and is 0° <α<60°. When the central axis of one of the plurality of second holes overlaps with the central axis of one of the corresponding plurality of first holes, Wn, Gn, _Hn and α conform to the formula 1: _2Hn *│tan( α)│ ≤ (2Gn+Wn). When the central axis of one of the plurality of second holes does not overlap with the central axis of one of the corresponding plurality of first holes, Wn, Gn, _Hn and α conform to Equation 2: _2Hn *│tan (α)│ ≤(Gn+Wn).

The present invention provides a biometric sensing group, and the biometric sensing devices included in the biometric sensing device can avoid the occurrence of optical crosstalk and have good identification performance.

The biometric sensing device of the present invention includes a substrate, a sensing element layer, a first light shielding layer, and a second light shielding layer. The substrate has a first area and a second area, wherein the second area is adjacent to the edge of the substrate, and the first area is far away from the edge of the substrate. The sensing element layer is disposed on the substrate and includes a plurality of sensing elements for sensing light. The first light shielding layer is disposed on the sensing element layer and includes a plurality of first holes, and a first light shielding portion is arranged between two adjacent first holes. The second light-shielding layer is disposed on the first light-shielding layer and includes a plurality of second holes, wherein a second light-shielding portion is arranged between two adjacent second holes, and the second light-shielding portion corresponds to the first light-shielding portion. The central axis of one of the plurality of second holes in the first area overlaps with the central axis of the corresponding one of the plurality of first holes, and is located in one of the plurality of second holes in the second area The central axis does not overlap with the central axis of one of the corresponding plurality of first holes.

To sum up, in the biometric sensing group of the present invention, the first hole of the biometric sensing device located in the region away from the edge of the substrate has the hole width, the width of the first light shielding portion, the first light shielding The distance between the layer and the second light-shielding layer and the maximum angle sandwiched by the central axis of the second hole and the light passing through the center of the second hole conform to Relation 1; and enable biometric sensing in an area near the edge of the substrate The width of the first hole of the device, the width of the first light-shielding part, the distance between the first light-shielding layer and the second light-shielding layer, and the central axis of the second hole and the light passing through the center of the second hole are sandwiched. The maximum angle conforms to the relational expression 2, so that all the biometric sensing devices provided by the present invention have good identification performance.

As used herein, "about", "approximately", "substantially", or "substantially" includes the stated value and the average value within an acceptable deviation of the particular value as determined by one of ordinary skill in the art, taking into account all The measurement in question and the specific amount of error associated with the measurement (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±15%, ±10%, ±5%, for example. Furthermore, the terms "about", "approximately", "substantially", or "substantially" as used herein may depend on measurement properties, cutting properties, or other properties to select a more acceptable range or standard deviation, and may Not one standard deviation applies to all properties.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, the "electrical connection" may refer to the existence of other elements between the two elements.

Furthermore, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the particular orientation of the figures. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "above" or "below" can encompass both an orientation of above and below.

Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and description to refer to the same or like parts.

FIG. 1 is a schematic top view of a biometric sensing population according to an embodiment. Referring to FIG. 1 , the biometric sensing group 10 of this embodiment includes a substrate SB and a plurality of biometric sensing devices 100 and 200 , wherein the substrate SB has a first area CA and a second area PA, and the first area CA is far away from On the edge of the substrate SB, and the second area PA is adjacent to the edge of the substrate SB. In this embodiment, the second area PA surrounds the first area CA, but the present invention is not limited to this. For example, the biometric sensing device 100 and the biometric sensing device 200 are respectively located in the first area CA and the second area PA of the substrate SB. The biometric sensing device 100 and the biometric sensing device will be described below with reference to FIGS. 2A and 2B . The components included in the apparatus 200 and the specific parametric relationships they have.

FIG. 2A is a schematic cross-sectional view of a biometric sensing device according to an embodiment of the section line A1-A1' of FIG. 1 . Referring first to FIG. 2A , the biometric sensing device 100 of this embodiment includes a sensing element layer SE, a first light shielding layer BL1 and a second light shielding layer BL2 .

The sensing element layer SE is, for example, disposed on the substrate SB and includes a plurality of sensing elements SU for sensing the light L. In some embodiments, the substrate SB may be a flexible substrate or a rigid substrate, but the invention is not limited thereto. In addition to a plurality of sensing elements SU, the sensing element layer SE of this embodiment may also include active elements (not shown), scan lines (not shown), and read lines (not shown) and other traces , but the present invention is not limited to this. In some exemplary embodiments, the active element, the scan line and the readout line are also disposed on the substrate SB, for example, wherein the scan line is electrically connected to the source of the active element, and the readout line is electrically connected to the drain of the active element connected to read the signal sensed by the sensing element SU. In some exemplary embodiments, the sensing element SU may include a first electrode (not shown), a photosensitive layer (not shown) and a second electrode (not shown). The first electrode, the photosensitive layer and the second electrode are sequentially stacked on the substrate SB, for example, in this order. The first electrode and the second electrode may include, for example, a light-transmitting conductive material or an opaque conductive material, which depends on the application of the biometric sensing device 100 . In this embodiment, the biometric sensing device 100 can be used as an off-screen fingerprint sensor. Therefore, light from the outside world (such as light reflected by a fingerprint) will pass through the second electrode and be incident on the photosensitive layer. Therefore, the second electrode is made of light-transmitting conductive material. The photosensitive layer has the property of converting light energy into electrical energy, so as to realize the function of optical sensing. In some embodiments, the material of the photosensitive layer may include a silicon-rich material, which may be silicon-rich oxide, silicon-rich nitride, silicon-rich oxynitride, silicon-rich carbide, silicon-rich oxycarbide, hydrogenated silicon-rich oxide compound, hydrogenated silicon-rich nitride, hydrogenated silicon-rich carbide, element-doped material with high work function, such as: silicon germanium compound or other suitable organic materials, or a combination of the above materials. In addition, in some embodiments, the sensing element layer SE may further include an insulating layer (not shown) covering the plurality of sensing elements SU, the insulating layer may be a single-layer structure or a multi-layer structure, and may include organic materials or Inorganic materials, the present invention is not limited to this.

For example, the first light shielding layer BL1 is disposed on the sensing element layer SE and includes a plurality of first holes OP1. From another perspective, the first light shielding layer BL1 includes a plurality of first holes OP1 located between two adjacent first holes OP1. A plurality of first light shielding parts BM1. In this embodiment, a plurality of first holes OP1 of the first light shielding layer BL1 can be used to define a light passing area, wherein the first light shielding portion BM1 has a width Gn, and at least one of the plurality of first holes OP1 has a hole width Wn, and at least one of the plurality of first holes OP1 has a central axis OP1_C. In some embodiments, the material of the first light-shielding layer BL1 includes light-shielding and/or reflective materials, which may be metals, alloys, nitrides of the aforementioned materials, oxides of the aforementioned materials, oxynitrides of the aforementioned materials, or other materials. Suitable shading and/or reflective materials. For example, the material of the first light shielding layer BL1 may be molybdenum, molybdenum oxide or a stack thereof. Based on this, the light passing region can be defined in the region where the first light shielding layer BL1 is not provided. In this embodiment, the first holes OP1 are disposed correspondingly to the sensing elements SU in the sensing element layer SE, so that the sensing elements SU can convert the light L from the outside that passes through the first holes OP1 into corresponding electrical signals No. In addition, in some embodiments, the region provided with the first light shielding portion BM1 may be used to shield the active element of the sensing element SU. In detail, the first light shielding portion BM1 may be located above the active element and at least shield the semiconductor layer of the active element, thereby preventing light from the outside from irradiating the semiconductor layer, thereby avoiding the leakage of the active element.

In some embodiments, the biometric sensing device 100 of this embodiment may further include a first insulating layer IL1 disposed between the sensing element layer SE and the first light shielding layer BL1. The first insulating layer IL1 may be, for example, an inorganic layer or an organic layer. In the case where the first insulating layer IL1 is an inorganic layer, the material it includes may be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials. In the case where the first insulating layer IL1 is an organic layer, the material it includes may be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene A stack of vinyl fluoride, hexamethyldisiloxane, or at least two of the above materials. Alternatively, the first insulating layer IL1 may include an organic material having a filtering effect. For example, the first insulating layer IL1 can be an IR-cut filter layer to prevent the displayed image from being distorted or chromatic due to the influence of infrared light, but the invention is not limited to this. . In some embodiments, the first insulating layer IL1 may have a single-layer structure or a multi-layer structure, but the invention is not limited thereto.

For example, the second light shielding layer BL2 is disposed on the first light shielding layer BL1 and includes a plurality of second holes OP2. From another perspective, the second light shielding layer BL2 includes a plurality of second holes OP2 located between two adjacent second holes A plurality of second light shielding parts BM2. The plurality of second holes OP2 in the second light shielding layer BL2 can also be used for example to define a light passing area, wherein the second light shielding portion BM2 has a width Gn+1, and at least one of the plurality of second holes OP2 has a hole width Wn +1, and at least one of the plurality of second holes OP2 has a central axis OP2_C. In some embodiments, in the normal direction n of the substrate SB, the second hole OP2 of the second light shielding layer BL2 corresponds to the first hole OP1 of the first light shielding layer BL1 . For example, the central axis OP2_C of the second hole OP2 in this embodiment overlaps the central axis OP1_C of the first hole OP1, that is, between the central axis OP2_C of the second hole OP2 and the central axis OP1_C of the first hole OP1 There is no offset distance, but the present invention is not limited thereto. In other embodiments, there may be an offset distance between the central axis OP2_C of the second hole OP2 and the central axis OP1_C of the first hole OP1 . From another perspective, in the normal direction n of the substrate SB, the second light shielding portion BM2 corresponds to and partially overlaps with the first light shielding portion BM1, but the present invention is not limited thereto.

In some embodiments, the width Wn+1 of the second hole OP2 may be larger than the width Wn of the first hole OP1 , and the width Gn+1 of the second light-shielding portion BM2 may be smaller than that of the first light-shielding portion BM1 The width Gn is not limited in the present invention. In addition, in the normal direction n of the substrate SB, there is a distance _Hn between the first light shielding layer BL1 and the second light shielding layer BL2. It is worth noting that the distance _Hn here is the top surface of the first light shielding layer BL1. The distance between BM1_T and the top surface BM2_T of the second light shielding layer BL2, but the invention is not limited to this, and it can also be the distance between the bottom surface of the first light shielding layer BL1 and the bottom surface of the second light shielding layer BL2 .

In some embodiments, the central axis OP2_C of the second hole OP2 and the light L passing through the center of the second hole OP2 form a maximum angle α. In detail, the maximum included angle α mentioned here is the critical angle at which the light L passing through the center of the second hole OP2 does not pass through the first hole OP1 not corresponding to the second hole OP2 . In this embodiment, the maximum angle α is the maximum angle between the path of the light L passing through the center of the second hole OP2 irradiated to the edge of the top surface BM1_T of the first light shielding portion BM1 and the central axis OP2_C of the second hole OP2 . In this embodiment, 0°<α<60°, but the present invention is not limited to this. In addition, in this embodiment, the first hole OP1 has a hole width Wn, the first light shielding portion BM1 has a width Gn, a distance _Hn between the first light shielding layer BL1 and the second light shielding layer BL2, and the second hole OP2 The maximum clamping degree α between the central axis OP2_C and the light L passing through the center of the second hole OP2 conforms to the following formula 1. 2H _n *│tan(α)│ ≤ (2Gn+Wn)... Equation 1

When the parameters included in the biometric sensing device 100 of the present embodiment have the above-mentioned relationship (Wn, Gn, _Hn and α conform to the above-mentioned relationship 1), it can avoid the occurrence of optical cross-talk phenomenon and reduce the resolution of the image, thereby reducing the resolution of the image. The biometric sensing device of this embodiment has good identification performance.

In addition, in some embodiments, in the normal direction n of the substrate SB, there is a distance D _n between the top surface BM1_T of the first light shielding layer BL1 and the top surface SE_T of the sensing element layer SE, and the second light shielding layer BL2 There is a distance _Dn+1 between the top surface BM2_T of the sensor element layer SE and the top surface SE_T of the sensing element layer SE, and _Dn , _Dn+1 and _Hn conform to the following Equation 3. For example, the distance _Dn is the distance between the top surface BM1_T of the first light shielding portion BM1 and the top surface SE_T of the sensing element layer SE, and the distance _Dn+1 is the distance between the top surface ML2_T of the second light shielding portion BM2 and the sensing element layer SE. The distance between the top surfaces SE_T of the element layer SE is measured. 0 < H _n ≤ (D _n+1 −D _n ) …… Equation 3.

In some embodiments, the biometric sensing device 100 of this embodiment may further include a second insulating layer IL2 disposed between the first light shielding layer BL1 and the second light shielding layer BL2. The material and structure of the second insulating layer IL2 are similar to the above-mentioned first insulating layer IL1 , and details are not repeated in this embodiment.

In some embodiments, the biometric sensing device 100 of this embodiment may further include a third light shielding layer BL3 and a plurality of microlenses ML. For example, the third light shielding layer BL3 and the plurality of microlenses ML are disposed on the second light shielding layer BL2, wherein the third light shielding layer BL3 includes a plurality of third holes OP3. From another perspective, the third light shielding layer BL3 includes A plurality of third light shielding parts BM3 between two adjacent third holes OP3. The third light-shielding layer BL3 is also used to define a light-passing area, and a plurality of microlenses ML are disposed in the light-passing area. In some embodiments, the plurality of microlenses ML correspond to the plurality of second holes OP2. For example, in some embodiments, the central axis ML_C of the plurality of microlenses ML overlaps with the central axis OP2_C of the second hole OP2 of the second light shielding layer BL2, but the present invention is not limited to this, in another In some embodiments, the central axis ML_C of the plurality of microlenses ML may not overlap with the central axis OP2_C of the second hole OP2 of the second light shielding layer BL2 . The plurality of first holes OP1 , second holes OP2 and third holes OP3 can be used, for example, to further improve the effect of light collimation, so as to reduce the problems of light leakage and light mixing caused by scattered light or refracted light. In some embodiments, the plurality of microlenses ML may be symmetric lenticular lenses, asymmetric lenticular lenses, plano-convex lenses or meniscus lenses, but the invention is not limited thereto. In addition, each or more of the plurality of microlenses ML may be disposed corresponding to one sensing element SU, but the invention is not limited thereto. Relative to the microlens ML, the top surface BM3_T of the third light shielding portion BM3 may have a gentle surface, but the present invention is not limited thereto.

In some embodiments, the biometric sensing device 100 of this embodiment may further include a third insulating layer IL3 disposed between the second light shielding layer BL2 and the plurality of microlenses ML. The material and structure of the third insulating layer IL3 are similar to the above-mentioned first insulating layer IL1 , and details are not repeated in this embodiment.

In some embodiments, the biometric sensing device 100 of this embodiment may further include a cover plate (not shown) overlapping with the substrate SB. The cover plate is disposed above the plurality of microlenses ML, for example, and includes at least one of a display panel, a touch panel, and a protection plate, wherein the display panel may be in a self-luminous form or a non-self-luminous form. When the biometric sensing device 100 of the present embodiment is used, the user's fingerprint contacts the cover plate.

Based on the above, when the parameters included in the biometric sensing device 100 of the present embodiment have at least the above-mentioned relationship, the optical crosstalk phenomenon can be avoided and the resolution of the image is reduced, so that the biometric sensing device of the present embodiment has Good identification performance.

FIG. 2B is a schematic cross-sectional view of a biometric sensing device according to another embodiment of the section line A2-A2' of FIG. 1 . It must be noted here that the embodiment shown in FIG. 2B uses the element numbers and part of the content of the embodiment in FIG. 2A , wherein the same or similar reference numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. . For the description of the omitted part, reference may be made to the descriptions and effects of the foregoing embodiments, and repeated descriptions of the following embodiments will not be repeated, and at least a part of the descriptions not omitted in the embodiment shown in FIG.

Referring to FIG. 2B , the main difference between the biometric sensing device 200 of the present embodiment and the biometric sensing device 100 of the previous embodiment is that one of the plurality of second holes OP2 of the second light shielding layer BL2 of the present embodiment is The central axis OP2_C of the one does not overlap with the central axis OP1_C of one of the corresponding plurality of first holes OP1. This is because when a biometric sensing population including a plurality of biometric sensing populations 100 and 200 is formed, the biometric sensing device 200 located in the second area PA adjacent to the edge of the substrate SB is prone to process drift. The phenomenon causes the offset distance Sn between the central axis OP2_C of the second hole OP2 of the second light shielding layer BL2 and the central axis OP1_C of the first hole OP1 in the biometric sensing group 200 .

In order to avoid the phenomenon that the biometric sensing group 200 is more prone to optical crosstalk due to the above-mentioned process offset, in this embodiment, the first hole OP1 has a hole width Wn, the first light shielding portion BM1 has a width Gn, and the first light shielding layer The distance H _n between BL1 and the second light shielding layer BL2 and the maximum clamping degree α between the central axis OP2_C of the second hole OP2 and the light L passing through the center of the second hole OP2 conform to the following formula 2. 2H _n *│tan(α)│ ≤(Gn+Wn)... Equation 2

When the parameters included in the biometric sensing device 200 of the present embodiment have at least the above-mentioned relationship (Wn, Gn, _Hn and α conform to the above-mentioned relationship 2), the optical crosstalk phenomenon can be avoided and the resolution of the image will be reduced. This enables the biometric sensing device of this embodiment to have good identification performance.

3A to 3D are image diagrams taken when the biometric sensing device according to FIG. 2A is used for sensing fingerprints, wherein FIG. 3A is an image taken with a resolution of 0.4 line pair, and FIG. 3B is an image taken in the analysis Fig. 3C is an image taken with a resolution of 0.6 line pair, Fig. 3C is an image taken with a resolution of 0.8 line pair, and Fig. 3D is a fingerprint image taken by a user using the biometric sensing device of Fig. 2A . 4A to 4D are image diagrams taken when the biometric sensing device according to FIG. 2B is used for sensing fingerprints, wherein FIG. 4A is an image taken under the condition that the resolution is 0.4 line pair, and FIG. 4B is an image taken during the analysis Figure 4C is an image taken with a resolution of 0.6 line pair, Figure 4C is an image taken with a resolution of 0.8 line pair, and Figure 4D is a fingerprint image taken by a user using the biometric sensing device of Figure 2B .

Please refer to FIG. 3A to FIG. 3D , which show that the biometric sensing device 100 has a good image resolution, because the parameters of the biometric sensing device 100 conform to the above-mentioned relationship 1, thereby avoiding optical crosstalk occurrence of the phenomenon. Similarly, please refer to FIG. 4A to FIG. 4D , which show that the biometric sensing device 200 also has good image resolution, because the parameters of the biometric sensing device 200 conform to the above-mentioned relationship 2, thereby The optical crosstalk phenomenon can be avoided.

To sum up, in the biometric sensing group of the present invention, the first hole of the biometric sensing device located in the region away from the edge of the substrate has the hole width, the width of the first light shielding portion, the first light shielding The distance between the layer and the second light-shielding layer and the maximum clamping degree between the central axis of the second hole and the light passing through the center of the second hole conform to Relation 1; The width of the first hole of the measuring device, the width of the first light-shielding part, the distance between the first light-shielding layer and the second light-shielding layer, and the central axis of the second hole and the light passing through the center of the second hole are sandwiched The maximum clamping degree of is in accordance with the relational expression 2, so that the biometric sensing devices provided by the present invention all have good identification performance.

10: Biometric sensing groups 100, 200: Biometric sensing devices A1-A1', A2-A2': Section line BL1: First light shielding layer BL2: Second light shielding layer BL3: Third light shielding layer BM1: First Light shielding portion BM1_T: top surface BM2 of the first light shielding portion: second light shielding portion BM2_T: top surface of the second light shielding portion BM3: third light shielding portion BM3_T: top surface CA of the third light shielding portion: first area _Dn : th The distance _Dn+1 between the top surface of a light shielding layer and the top surface of the sensing element layer: the distance between the top surface of the second light shielding layer and the top surface of the sensing element layer Gn: the width of the first light shielding portion Gn+1: Width of the second light shielding portion _Hn : Distance between the first light shielding layer and the second light shielding layer IL1: First insulating layer IL2: Second insulating layer IL3: Third insulating layer L: Light rays ML: Micro Lens ML_C: central axis n of microlens: normal direction OP1: first hole OP1_C: central axis of first hole OP2: second hole OP2_C: central axis of second hole OP3: third hole PA: second area SB : Substrate SE: Sensing element layer SE_T: Top surface of sensing element layer Sn: Offset distance SU: Sensing element Wn: Hole width of the first hole Wn+1: Hole width of the second hole α: Maximum included angle

FIG. 1 is a schematic top view of a biometric sensing population according to an embodiment. FIG. 2A is a schematic cross-sectional view of a biometric sensing device according to an embodiment of the section line A1-A1' of FIG. 1 . FIG. 2B is a schematic cross-sectional view of a biometric sensing device according to another embodiment of the section line A2-A2' of FIG. 1 . 3A to 3D are image diagrams taken when the biometric sensing device according to FIG. 2A is used for sensing fingerprints, wherein FIG. 3A is an image taken under the condition that the resolution is 0.4 line pair/mm, FIG. 3B is an image taken with a resolution of 0.6 line pair, FIG. 3C is an image taken with a resolution of 0.8 line pair, and FIG. 3D is when a user uses the biometric sensing device of FIG. 2A Photographed fingerprint images. 4A to 4D are image diagrams taken when the biometric sensing device according to FIG. 2B is used for sensing fingerprints, wherein FIG. 4A is an image taken under the condition that the resolution is 0.4 line pair, and FIG. 4B is an image taken during the analysis Figure 4C is an image taken with a resolution of 0.6 line pair, Figure 4C is an image taken with a resolution of 0.8 line pair, and Figure 4D is a fingerprint image taken by a user using the biometric sensing device of Figure 2B .

100: Biometric Sensing Device

A1-A1': section line

BL1: The first light shielding layer

BL2: The second light shielding layer

BL3: The third shading layer

BM1: The first light shielding part

BM1_T: the top surface of the first light shielding part

BM2: Second shading part

BM2_T: Top surface of the second light shield

BM3: Third shade

BM3_T: Top surface of the third light-shielding portion

D _n : the distance between the top surface of the first light shielding layer and the top surface of the sensing element layer

D _n+1 : the distance between the top surface of the second light shielding layer and the top surface of the sensing element layer

Gn: Width of the first light shielding portion

Gn+1: The width of the second light shielding portion

H _n : the distance between the first light shielding layer and the second light shielding layer

IL1: first insulating layer

IL2: Second insulating layer

IL3: The third insulating layer

L: light

ML: Micro lens

ML_C: the central axis of the microlens

n: normal direction

OP1: The first hole

OP1_C: The central axis of the first hole

OP2: Second hole

OP2_C: The central axis of the second hole

OP3: The third hole

SB: Substrate

SE: Sensing element layer

SE_T: The top surface of the sensing element layer

SU: Sensing element

Wn: hole width of the first hole

Wn+1: hole width of the second hole

α: Maximum included angle

Claims (11)

A biometric sensing device, comprising: a sensing element layer disposed on a substrate and including a plurality of sensing elements for sensing light; a first light shielding layer disposed on the sensing element layer and including a plurality of sensing elements A first hole, wherein at least one of the plurality of first holes has a hole width of Wn, and there is a first light shielding portion between two adjacent first holes, and the first light shielding portion has a width of is Gn; and a second light-shielding layer, disposed on the first light-shielding layer and comprising a plurality of second holes, wherein a second light-shielding portion is arranged between two adjacent second holes, and the second light-shielding portion Corresponding to the first light-shielding portion, in the normal direction of the substrate, the distance between the first light-shielding portion and the second light-shielding portion is H _n , wherein one of the plurality of second holes is The included angle between the central axis of the one and the light ray is α, and 0°<α<60°, wherein when the central axis of one of the plurality of second holes and the corresponding plurality of first holes When the central axis of one of the holes overlaps, Wn, Gn, _Hn and α conform to Equation 1: 2H _n *│tan(α)│ ≤ (2Gn+Wn)... Equation 1, wherein when the plurality of first When the central axis of one of the two holes does not overlap with the central axis of one of the corresponding first holes, Wn, Gn, _Hn and α are in accordance with Equation 2: _2Hn *│tan (α)│ ≤ (Gn+Wn) ...... Formula 2. The biometric sensing device according to claim 1, wherein in the normal direction of the substrate, the distance from the top surface of the first light shielding layer to the top surface of the sensing element layer is _Dn , the distance from the top surface of the second light shielding layer to the top surface of the sensing element layer is D _{n +1} , and D _n , D _{n +1} and H _n conform to formula 3: 0 < H _n ≤ (D _{n +1} -D _n ) Equation 3. The biometric sensing device of claim 1, further comprising: A plurality of microlenses are disposed on the second light shielding layer and correspond to the plurality of second holes. The biometric sensing device of claim 3, further comprising: a first insulating layer, disposed between the sensing element layer and the first light shielding layer; a second insulating layer disposed between the first light shielding layer and the second light shielding layer; and A third insulating layer is disposed between the second light shielding layer and the plurality of microlenses. The biometric sensing device of claim 1, further comprising: The cover plate is overlapped with the substrate, and the cover plate includes at least one of a display panel, a touch panel and a protection plate. A biometric sensing population comprising: a substrate having a first area and a second area, wherein the second area is adjacent to the edge of the substrate, and the first area is far away from the edge of the substrate; a sensing element layer, disposed on the first region and the second region of the substrate and comprising a plurality of sensing elements for sensing light; a first light shielding layer, disposed on the sensing element layer and comprising a plurality of first holes, and a first light shielding portion is arranged between two adjacent first holes; and The second light-shielding layer is disposed on the first light-shielding layer and includes a plurality of second holes, wherein there is a second light-shielding portion between two adjacent second holes, and the second light-shielding portion is connected to the first light-shielding portion. Corresponding to a shading portion, wherein the central axis of one of the plurality of second holes located in the first region overlaps with the central axis of one of the corresponding plurality of first holes, and is located in the second The central axis of one of the plurality of second holes in the region does not overlap with the central axis of the corresponding one of the plurality of first holes. The biometric sensing population of claim 6, wherein at least one of the plurality of first holes has a hole width of Wn, the first light shielding portion has a width of Gn, and the width of the first hole is Gn. In the line direction, the distance between the first shading portion and the second shading portion is H _n , the angle between the central axis of one of the plurality of second holes and the light is α, and 0°<α<60°; wherein the central axis of one of the plurality of second holes located in the first region overlaps with the central axis of the corresponding one of the plurality of first holes, Wn, Gn, _Hn and α conform to Equation 1: 2H _n *│tan(α)│ ≤ (2Gn+Wn)... Equation 1, wherein one of the plurality of second holes located in the second region The central axis of , and the central axis of one of the corresponding first holes do not overlap, and Wn, Gn, H _n and α conform to formula 2: 2H _n *│tan(α)│ ≤( Gn+Wn)... Formula 2. The biometric sensing population of claim 7, wherein in the normal direction of the substrate, the distance from the top surface of the first light shielding layer to the top surface of the sensing element layer is _Dn , the distance from the top surface of the second light shielding layer to the top surface of the sensing element layer is D _{n +1} , and D _n , D _{n +1} and H _n conform to formula 3: 0 < H _n ≤ (D _{n +1} -D _n ) Equation 3. The biometric sensing population of claim 6, further comprising: A plurality of microlenses are disposed on the second light shielding layer and correspond to the plurality of second holes. The biometric sensing population of claim 9, further comprising: a first insulating layer, disposed between the sensing element layer and the first light shielding layer; a second insulating layer disposed between the first light shielding layer and the second light shielding layer; and A third insulating layer is disposed between the second light shielding layer and the plurality of microlenses. The biometric sensing population of claim 6, further comprising: The cover plate is overlapped with the substrate, and the cover plate includes at least one of a display panel, a touch panel and a protection plate.

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