JPH04199874A - Solid state image sensing device - Google Patents
Solid state image sensing deviceInfo
- Publication number
- JPH04199874A JPH04199874A JP2335103A JP33510390A JPH04199874A JP H04199874 A JPH04199874 A JP H04199874A JP 2335103 A JP2335103 A JP 2335103A JP 33510390 A JP33510390 A JP 33510390A JP H04199874 A JPH04199874 A JP H04199874A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- light
- conversion element
- formed above
- microlens layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 85
- 238000003384 imaging method Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 51
- 239000002952 polymeric resin Substances 0.000 description 28
- 229920003002 synthetic resin Polymers 0.000 description 28
- 230000035945 sensitivity Effects 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 12
- 108010010803 Gelatin Proteins 0.000 description 11
- 239000005018 casein Substances 0.000 description 11
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 11
- 235000021240 caseins Nutrition 0.000 description 11
- 229920000159 gelatin Polymers 0.000 description 11
- 239000008273 gelatin Substances 0.000 description 11
- 235000019322 gelatine Nutrition 0.000 description 11
- 235000011852 gelatine desserts Nutrition 0.000 description 11
- 230000007423 decrease Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- -1 chisein Polymers 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は固体撮像素子置に間するものである。[Detailed description of the invention] Industrial applications The present invention is applied to a solid-state image sensor arrangement.
従来の技術
近年、固体撮像装置の小型化及び高解像度化に伴う、間
口面積（光電変換素子の光が入射する側の遮光部にカバ
ーされていない領域の面積、つまり、光電変換素子の受
光面積）の減少による感度の低下が問題となっている。Conventional technology In recent years, with the miniaturization and higher resolution of solid-state imaging devices, the frontage area (the area of the area not covered by the light shielding part on the side where the light of the photoelectric conversion element enters, that is, the light-receiving area of the photoelectric conversion element) ) has become a problem due to a decrease in sensitivity.
そこで、感度向上の為に光電変換素子の上方に入射光を
集光するレンズを設けて実質的な固体撮像装置の間口面
積の増加が計られている。Therefore, in order to improve the sensitivity, a lens is provided above the photoelectric conversion element to condense incident light, thereby increasing the substantial frontage area of the solid-state imaging device.
以下、従来の固体撮像装置について説明する。A conventional solid-state imaging device will be described below.
第５図は、従来の固体撮像装置の断面図である。FIG. 5 is a cross-sectional view of a conventional solid-state imaging device.
半導体基板５０１に光電変換素子５０２が形成され、そ
の上に絶縁膜５０３が形成された後、光電変換素子５０
２以外の上方にポリシリコンからなる転送電極部５０４
が形成され、さらにその上にアルミニウム等からなる遮
光部５０５が形成されている。そして、さらにその上に
、表面保護膜５０６と透明高分子樹脂からなる平坦化層
５０７が形成されている。さらにカラーフィルター層と
して、カゼイン、セラチン等の材料を所望の受光部上に
杉成し、適切な染料により染色することにより所望のカ
ラーフィルター層５０８か形成され、混色を防ぐ為の透
明高分子樹脂からなる中間層５０９が形成されている。After a photoelectric conversion element 502 is formed on a semiconductor substrate 501 and an insulating film 503 is formed thereon, the photoelectric conversion element 50
Transfer electrode section 504 made of polysilicon above other than 2
is formed, and a light shielding portion 505 made of aluminum or the like is further formed thereon. Furthermore, a surface protective film 506 and a flattening layer 507 made of transparent polymer resin are formed thereon. Furthermore, as a color filter layer, a material such as casein or ceratin is deposited on the desired light-receiving area and dyed with an appropriate dye to form the desired color filter layer 508, and a transparent polymer resin is used to prevent color mixing. An intermediate layer 509 is formed.
以下同様の工程を繰り返し１．イエロー・シアン・マセ
ンダ・グリーン、レッド・グリーン・フルー、等の色群
からなるカラーフィルターが形成される。その上に、透
明高分子樹脂からなるカラーフィルター・レンズ間Ｎ５
１０が形成され、その上に透明高分子樹脂またはカゼイ
ン・ゼラチン等からなる丸みを持った凸型マイクロレン
ズ層５１１が形成され、最後に透明高分子樹脂からなる
保護膜５１２が形成されている。Repeat the same steps below 1. A color filter consisting of color groups such as yellow, cyan, macenda, green, red, green, and flu is formed. On top of that, there is an N5 between the color filter and the lens made of transparent polymer resin.
10 is formed, a rounded convex microlens layer 511 made of a transparent polymer resin, casein/gelatin, etc. is formed thereon, and finally a protective film 512 made of a transparent polymer resin is formed.
発明が解決しようとする課題
しかしながら、このような従来の技術では、固体撮像素
子の小型化あるいは高解像度化に伴う、開口面積の減少
による感度低下、Ｓ／Ｎの悪化という課題を十分改善し
きれない。Problems to be Solved by the Invention However, with these conventional techniques, the problems of reduced sensitivity and deterioration of S/N due to a decrease in aperture area due to the miniaturization or higher resolution of solid-state image sensors cannot be sufficiently improved. do not have.
以下、従来の技術のその課題を詳しく説明する。Hereinafter, the problems of the conventional technology will be explained in detail.
第６図は、従来の凸型マイクロレンズを使用した固体撮
像装置の概略断面図である。６０１は半導体基板、６０
２は光電変換素子、６０３は光電変換素子以外への光入
射を防ぐ遮光部、６０４は入射光を集光する凸型マイク
ロレンズである。FIG. 6 is a schematic cross-sectional view of a solid-state imaging device using a conventional convex microlens. 601 is a semiconductor substrate, 60
2 is a photoelectric conversion element, 603 is a light shielding part that prevents light from entering other than the photoelectric conversion element, and 604 is a convex microlens that condenses incident light.
固体撮像装置に対して垂直に平行光線が入射した場合を
考゛える。光電変換部６０２及び凸型マイクロレンズ６
０４の中心Ｐに入射する光ａは光電変換部６０２に入射
し光電変換素子６０２内で電子と正孔を励起する。また
、開口部（光電変換素子のうち遮光部にカバーされてい
太い領域）より少し外側の位置Ｂに入射した光すは、遮
光部６０３をかすめて光電変換素子６０２に入射し光電
変換素子６０２内で電子と正孔を励起する。従って、中
心Ｐから位置Ｂまでの領域Ｒ１に入射した光は光電変換
部６０２に集光され、凸型マイクロレンズ６０４が無い
場合に比べ感度の向上に役だっている。しかしながら、
中心Ｐからの距〜離が位置Ｂより遠い位置Ｃに入射した
光Ｃは受光部に斜めに入射し受光部６０２を斜めに通過
して半導体基板６０１内で電子と正孔を励起する。この
場合スミア・ノイズの原因となり固体撮像素子のノイズ
を増加させる。よって、位置Ｂから位置Ｃの間の領域Ｒ
２に入射する光はノイズを増加させる。また、位置Ｃよ
りも外側の領域Ｒ３に入射した光、例えは光ｄは遮光部
６０３の側面に当たって受光部６０２に届かず感度の増
加に役立たない。従って、上記したようにスミア・ノイ
ズの発生の問題と光を集光しても受光部６０２に届けら
れないという問題のため、従来の固体撮像素子において
は、第５図に示すように光を集光するための凸型マイク
ロレンズは開口部より若干大きい程度に制限されている
。そのため、凸型マイクロレンズをより大きくして感度
向上しＳ／Ｎを向上することはできない。また、第６図
に示°すように、カメラレンズの絞りを大きく開いた等
の理由によって入射光が非平行光線の場合には、位置Ｂ
よりも中心Ｐに近い位置Ｆに入射した光ｆてさえ、受光
部６０２と半導体基板６＝０１の境界近くて電子と正孔
を励起するためスミア・ノイズの発生原因となる。Consider the case where parallel light rays are incident perpendicularly to a solid-state imaging device. Photoelectric conversion unit 602 and convex microlens 6
04 enters the photoelectric conversion unit 602 and excites electrons and holes within the photoelectric conversion element 602. Furthermore, the light incident at position B, which is slightly outside the opening (the thick area covered by the light shielding part of the photoelectric conversion element), passes through the light shielding part 603 and enters the photoelectric conversion element 602, and enters the photoelectric conversion element 602. excites electrons and holes. Therefore, the light incident on the region R1 from the center P to the position B is focused on the photoelectric conversion unit 602, which helps improve the sensitivity compared to the case without the convex microlens 604. however,
Light C incident at a position C that is farther from the center P than position B obliquely enters the light receiving section, passes obliquely through the light receiving section 602, and excites electrons and holes within the semiconductor substrate 601. In this case, it causes smear noise and increases the noise of the solid-state image sensor. Therefore, the area R between position B and position C
Light incident on 2 increases noise. Further, light that has entered the region R3 outside the position C, for example light d, hits the side surface of the light shielding section 603 and does not reach the light receiving section 602, so that it is not useful for increasing the sensitivity. Therefore, due to the problem of smear noise generation and the problem that even if the light is focused, it is not delivered to the light receiving section 602 as described above, in the conventional solid-state image sensor, the light is not transmitted as shown in FIG. The convex microlens for condensing light is limited to a size slightly larger than the aperture. Therefore, it is not possible to increase the sensitivity and improve the S/N ratio by making the convex microlens larger. Furthermore, as shown in Fig. 6, if the incident light is a non-parallel ray due to reasons such as wide opening of the camera lens aperture, position B
Even the light f incident at a position F closer to the center P excites electrons and holes near the boundary between the light receiving section 602 and the semiconductor substrate 6=01, causing smear noise.
この様な従来の技術では、最近のように固体撮像装置の
小型化及び高解像度化の為に開口面積が減少すると、感
度の低下及びスミア・ノイズの増加によりＳ／Ｎが悪化
する。In such conventional techniques, when the aperture area decreases due to the recent trend toward smaller size and higher resolution of solid-state imaging devices, the S/N deteriorates due to a decrease in sensitivity and an increase in smear noise.
また、隣同志のカラーフィルター境界近傍のカラー特性
は劣化しているため、第５図に示すように、隣同志のカ
ラーフィルター境界近傍をを通過した光を光電変換素子
５０２で検出している従来の固体撮像装置のカラー特性
は劣化する。Furthermore, since the color characteristics near the boundaries of adjacent color filters have deteriorated, as shown in FIG. The color characteristics of solid-state imaging devices deteriorate.
本発明は上記従来の問題点を解決するもので、固体撮像
装置における感度の増加とスミア・ノイズの低減を同時
に実現する方法を提供するものである。The present invention solves the above conventional problems and provides a method for simultaneously increasing sensitivity and reducing smear noise in a solid-state imaging device.
課題を解決するための手段
本発明は、半導体基板に形成された複数個の光電変換素
子と、前記光電変換素子の上方に第１の光方向変換機能
部（例えは凹型マイクロレンズ）と、前記第１の光方向
変換機能部の上方に第２の光方向変換機能部（例えば凸
型マイクロレンズ）とを備え、前記第１の光方向変換機
能部が入射光を前記光電変換素子表面の開口部に垂直な
方向に近くなるように変換出来、前記第２の光方向変換
機能部が入射光を前記第１の光方向変換機能部の上部に
集光するようになっている固体撮像装置。Means for Solving the Problems The present invention includes a plurality of photoelectric conversion elements formed on a semiconductor substrate, a first light direction conversion function section (for example, a concave microlens) above the photoelectric conversion elements, and a A second light direction conversion function section (for example, a convex microlens) is provided above the first light direction conversion function section, and the first light direction conversion function section converts the incident light into an opening on the surface of the photoelectric conversion element. The solid-state imaging device is configured such that the second light direction converting function section focuses incident light onto an upper part of the first light direction conversion function section.
作用
本発明は、上記構成によって、第２の光方向変換機能部
が固体撮像装置の画素部に入射した光を集光し、第１の
光方向変換機能部が、その集光し・た光を光電変換素子
に垂直に近い角度で且つ平行光に近くして光電変換素子
に入射させる。それにより、感度の増加とスミア・ノイ
ズの低減を同時に実現し、Ｓ／Ｎの向上を実現できる。Effect of the present invention With the above configuration, the second light direction conversion function section collects the light incident on the pixel section of the solid-state imaging device, and the first light direction conversion function section collects the focused light. is made incident on the photoelectric conversion element at an angle close to perpendicular to the photoelectric conversion element and close to parallel light. Thereby, it is possible to simultaneously increase sensitivity and reduce smear noise, and improve S/N.
実施例
以下、本発明の実施例について図面を参照しながら説明
する。EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.
本発明の第１の実施例を第１図に示す。１０１は半導体
基板、１０２は光電変換素子、１０３は絶縁膜、１０４
はポリシリコンからなる転送電極部、１０５はアルミニ
ウム等からなる遮光部、１０６は表面保護膜、１０７は
透明高分子樹脂からなる平坦化層、１０８は透明高分子
樹脂またはカゼイン、ゼラチン等の材料からなる凹型マ
イクロレンズ層、１０９は透明高分子樹脂からなるレン
ズ・レンズ間層、１１０は透明高分子樹脂またはカゼイ
ン・ゼラチン等からなる丸みを持った凸型マイクロレン
ズ層、１１１は透明高分子樹脂からなる保護膜である。A first embodiment of the invention is shown in FIG. 101 is a semiconductor substrate, 102 is a photoelectric conversion element, 103 is an insulating film, 104
105 is a transfer electrode portion made of polysilicon, 105 is a light shielding portion made of aluminum or the like, 106 is a surface protective film, 107 is a flattening layer made of transparent polymer resin, and 108 is made of transparent polymer resin or a material such as casein or gelatin. 109 is a lens-to-lens interlayer made of transparent polymer resin, 110 is a rounded convex microlens layer made of transparent polymer resin or casein/gelatin, etc., and 111 is made of transparent polymer resin. It is a protective film.
このように、光電変換素子１０２の上方に形成された凹
型マイクロレンズ層１０８と、前記凹型マイクロレンズ
層１０８の上方に形成された凸型マイクロレンズ１１１
１とを備えることにより、従来例では遮光部に遮られる
ため光電変換素子に導くことのできなかった開口部から
遠く離れて入射した光を、光電変換素子１０２に導いて
感度を増加させることが出来る。同時に、光を光電変換
素子１０２の中心付近に垂直に近い角度で導くことによ
って、従来スミア・ノイズの原因となった光電変換素子
の周辺部への斜めの入射光を減らして、スミア・ノイズ
の発生を抑えている。In this way, the concave microlens layer 108 formed above the photoelectric conversion element 102 and the convex microlens 111 formed above the concave microlens layer 108
1, it is possible to increase the sensitivity by guiding the light incident far away from the opening, which in the conventional example could not be guided to the photoelectric conversion element because it was blocked by the light shielding part, to the photoelectric conversion element 102. I can do it. At the same time, by guiding light near the center of the photoelectric conversion element 102 at an angle close to perpendicular, the oblique incident light to the periphery of the photoelectric conversion element, which conventionally causes smear noise, is reduced, and smear noise is reduced. The outbreak is being suppressed.
本発明の第２の実施例を第２図に示す。２０１は半導体
基板、２０２は光電変換素子、２０３は絶縁膜、２０４
はポリシリコンからなる転送電極部、２０５はアルミニ
ウム等からなる遮光部、２０６は表面保護膜、２０７は
透明高分子樹脂からなる平坦化層、２０８はカゼイン、
ゼラ゛チン等の材料を所望の受光部上に形成し適切な染
料により染色したカラーフィルター層、２０９は混色を
防ぐ為の透明高分子樹脂から、なる中間層、２１０は透
明高分子樹脂からなるカラーフィルター・レンズ間層、
２１１は透明高分子樹脂またはカゼイン、ゼラチン等の
材料からなる凹型マイクロレンズ層、２１２は透明高分
子樹脂からなるレンズ・レンズ間層、２１３は透明高分
子樹脂またはカゼイン・ゼラチン等からなる丸みを持っ
た凸型マイクロレンズ層、２１４は透明高分子樹脂から
なる保護膜である。A second embodiment of the invention is shown in FIG. 201 is a semiconductor substrate, 202 is a photoelectric conversion element, 203 is an insulating film, 204
is a transfer electrode portion made of polysilicon, 205 is a light shielding portion made of aluminum or the like, 206 is a surface protective film, 207 is a flattening layer made of transparent polymer resin, 208 is casein,
A color filter layer made of a material such as gelatin formed on a desired light-receiving area and dyed with an appropriate dye, 209 an intermediate layer made of a transparent polymer resin to prevent color mixing, and 210 made of a transparent polymer resin. Color filter/lens interlayer,
211 is a concave microlens layer made of transparent polymer resin, casein, gelatin, etc.; 212 is a lens-to-lens layer made of transparent polymer resin; 213 is a rounded microlens layer made of transparent polymer resin, casein, gelatin, etc. The convex microlens layer 214 is a protective film made of transparent polymer resin.
このように、光電変換素子２０２の上・方に形成された
カラーフィルター層２０８と、前記カラーフィルター層
２０８の上方に形成された凹型マイクロレンズ層２１１
と、前記凹型マイクロレンズ１ｇ２１１のＬ方に形成さ
れた凸型マイクロレンズＮ２１３とを備えることにより
、従来例では遮光部に遮られるため光電変換素子に導く
ことのできなかった開口部から遠く離れて入射した光を
、光電変換素子２０２に導いて感度を増加させる。同時
に、光を光電変換素子２０２の中心付近に垂直に近い角
度で導くことによって、従来スミア・ノイズの原因とな
った光電変換素子の周辺部への斜めの入射光を減らして
、スミア・ノイズの発生を抑えている。ざらに、カラー
フィルター層２０８の特性の良好な中心近傍のみを使用
することにより固体撮像装置のカラー特性が良くなる。In this way, the color filter layer 208 formed above and above the photoelectric conversion element 202 and the concave microlens layer 211 formed above the color filter layer 208.
and a convex microlens N213 formed on the L side of the concave microlens 1g211, the light can be far away from the opening where it was not possible to guide the light to the photoelectric conversion element because it was blocked by the light shielding part in the conventional example. The incident light is guided to the photoelectric conversion element 202 to increase sensitivity. At the same time, by guiding light near the center of the photoelectric conversion element 202 at an angle close to perpendicular, the oblique incident light to the periphery of the photoelectric conversion element, which conventionally causes smear noise, can be reduced, thereby eliminating smear noise. The outbreak is being suppressed. In general, by using only the area near the center of the color filter layer 208 where the characteristics are good, the color characteristics of the solid-state imaging device are improved.
本発明の第３の実施例を第３図に示す。３０１は半導体
基板、３０２は光電変換素子、３０３は絶縁膜、３０４
はポリシリコンからなる転送電極部、３０５はアルミニ
ウム等からなる遮光部、３０６は表面保護膜、３０７は
透明高分子樹脂からなる平坦化層、３０８は透明高分子
樹脂または力セイン、ゼラチン等の材料からなる凹型マ
イクロレンズ層、３０９は透明高分子樹脂からなるレン
ズ・カラーフィルター間層、３１１は混色を防ぐ為の透
明高分子樹脂からなる中間層、３１０はカゼイン、ゼラ
チン等の材料を所望の受光部上に形成し適切な染料によ
り染台したカラーフィルター層、３１２は透明高分子樹
脂からなるカラーフィルター・レンズ間層、３１３は透
明高分子樹脂またはカゼイン・ゼラチン等からなる丸み
を持った凸型マイクロレンズ層、３１４は透明高分子樹
脂からなる保護膜である。A third embodiment of the invention is shown in FIG. 301 is a semiconductor substrate, 302 is a photoelectric conversion element, 303 is an insulating film, 304
305 is a transfer electrode portion made of polysilicon, 305 is a light shielding portion made of aluminum or the like, 306 is a surface protective film, 307 is a flattening layer made of transparent polymer resin, and 308 is a material such as transparent polymer resin, chisein, gelatin, etc. 309 is a layer between the lens and color filter made of transparent polymer resin, 311 is an intermediate layer made of transparent polymer resin to prevent color mixing, and 310 is made of a material such as casein or gelatin for desired light reception. 312 is a color filter/lens interlayer made of transparent polymer resin, and 313 is a rounded convex layer made of transparent polymer resin, casein, gelatin, etc. The microlens layer 314 is a protective film made of transparent polymer resin.
このように、光電変換素子３０２の上方に形成された凹
型マイクロレンズ層３０８と、前記凹型マイクロレンズ
層３０８の上方に形成されたカラーフィルターＮ３１０
と、前記カラーフィルター層３１０の上方に形成された
凸型マイクロレンズＮ３１３とを備えることにより、従
来例では遮光部に遮られるため光電変換素子に導くこと
のできなかった開口部から遠く離れて入射した光を、光
電変換素子３０２に導いて感度を増加させる。同時に、
光を光電変換素子３０２の中心付近に垂直に近い角度で
導くことによって、従来スミア・ノイズの原因となった
光電変換素子の周辺部への斜めの入射光を減らして、ス
ミア・ノイズの発生を抑えている。さらに、カラーフィ
ルター層３１０を二つのレンズＮ３０８．３１３の間に
設けることにより光電変換素子上の複数の層の合計の膜
厚を薄くして、光の吸収による感度の低下を防いている
。In this way, the concave microlens layer 308 formed above the photoelectric conversion element 302 and the color filter N310 formed above the concave microlens layer 308.
and a convex microlens N313 formed above the color filter layer 310, the incident light can be far away from the aperture where it could not be guided to the photoelectric conversion element because it was blocked by the light shielding part in the conventional example. The resulting light is guided to the photoelectric conversion element 302 to increase sensitivity. at the same time,
By guiding light near the center of the photoelectric conversion element 302 at an angle close to perpendicular, the oblique incident light to the periphery of the photoelectric conversion element, which conventionally causes smear noise, is reduced, and the generation of smear noise is reduced. I'm suppressing it. Further, by providing the color filter layer 310 between the two lenses N308 and N313, the total thickness of the plurality of layers on the photoelectric conversion element is reduced, thereby preventing a decrease in sensitivity due to light absorption.
本発明の第４の実施例を第４図に示す。４０１は半導体
基板、４０２は光電変換素子、４０３は絶縁膜、４０４
はポリシリコンからなる転送電極部、４０５はアルミニ
ウム等からなる遮光部、４０６は表面保護膜、４０７は
透明高分子樹脂またはカゼイン、ゼラチン等の材料から
なる平坦化層を兼ねる凹型マイクロレンズ層、４０８は
透明高分子樹脂からなるレンズ・レンズ間層、４０９は
透明高分子樹脂またはカゼイン・ゼラチン等からなる丸
みを持った凸型マイクロレンズ層、４１０は透明高分子
樹脂からなる保護膜である。A fourth embodiment of the invention is shown in FIG. 401 is a semiconductor substrate, 402 is a photoelectric conversion element, 403 is an insulating film, 404
405 is a transfer electrode portion made of polysilicon, 405 is a light shielding portion made of aluminum or the like, 406 is a surface protective film, 407 is a concave microlens layer that also serves as a flattening layer made of a material such as transparent polymer resin or casein or gelatin, 408 409 is a lens-to-lens interlayer made of transparent polymer resin, 409 is a rounded convex microlens layer made of transparent polymer resin or casein/gelatin, and 410 is a protective film made of transparent polymer resin.
このように、光電変換素子４０２の上方に形成された凹
型マイクロレンズ層１０７と、前記凹型マイクロレンズ
層４０７の上方に形成された凸型マイクロレンズ層４１
０とを備えることにより、従来例では遮光部に遮られる
ため光電変換素子に導くことのてきなかった開口部から
遠く離れて入射した光を、光電変換素子４０２に導いて
感度を増加させる。同時に、光を光電変換素子４０２の
中心付近に垂直に近い角度で導くことによって、従来ス
ミア・ノイズの原因となった光電変換素子の周辺部への
斜めの入射光を減らして、スミア・ノイズの発生を抑え
ている。さらに、前記凹型マイクロレンズ層４０７が平
坦化層を兼ねることにより、光電変換素子上の複数の層
の合計の膜厚を薄くして、光の吸収による感度の低下を
防いでいる。In this way, the concave microlens layer 107 formed above the photoelectric conversion element 402 and the convex microlens layer 41 formed above the concave microlens layer 407.
0, the light incident far away from the opening, which in the conventional example could not be guided to the photoelectric conversion element because it was blocked by the light shielding part, is guided to the photoelectric conversion element 402, thereby increasing the sensitivity. At the same time, by guiding light near the center of the photoelectric conversion element 402 at an angle close to perpendicular, the oblique incident light to the periphery of the photoelectric conversion element, which conventionally causes smear noise, is reduced, and smear noise is reduced. The outbreak is being suppressed. Furthermore, since the concave microlens layer 407 also serves as a flattening layer, the total thickness of the plurality of layers on the photoelectric conversion element is reduced, thereby preventing a decrease in sensitivity due to light absorption.
なお、本発明の実施例では第一の光方向機能部として凹
型マイクロレンズ層、第２の光方向夏換機能部として凸
型マイクロレンズ層を用いて説明したが、換わりに光フ
ァイバー等を用いてもよい。In the embodiments of the present invention, a concave microlens layer is used as the first light direction function section, and a convex microlens layer is used as the second light direction function section. Good too.
また、本発明はＣＣＤ型の固体撮像装置だけでなく、Ｍ
ＯＳ型、ＢＢＤ型（バケツリレー型）、ＣＩＤ型（電荷
注入型）の固体撮像装置、ＡＭＩ型（アンブリファイト
・モス・イメージヤ−）、５ＩＴ（スタテック・インチ
１−スト・トランジスター）型、ＦＣ；Ａ （フローテ
ィング・ゲート・アレイ）型、ＢＡＳＩＳ（ヘース・ス
トアード・イメージ・センサー）型、ＣＭＤ （チャー
ジ・モジュレーション・デバイス）型、アバランシェ型
等の増倍型固体撮像装置にも適応可能である。Furthermore, the present invention is applicable not only to CCD type solid-state imaging devices but also to M
OS type, BBD type (bucket brigade type), CID type (charge injection type) solid-state imaging device, AMI type (Amblyphite Moss Imager), 5IT (Static Inch 1-Strist Transistor) type, FC It is also applicable to multiplier type solid-state imaging devices such as A (floating gate array) type, BASIS (Haas stored image sensor) type, CMD (charge modulation device) type, and avalanche type.
また、凹型マイクロレンズ層、凸型マイクロレンズ層、
カラーフィルター層等は、素子と分けて作成し後で張り
付けても良い。In addition, a concave microlens layer, a convex microlens layer,
The color filter layer and the like may be created separately from the element and attached later.
発明の効果
以上の説明のように、本発明の固体撮像装置では、光電
変換素子の上方に第１の光方向変換機能部を備え、前記
第１の光方向変換機能部の上方に第２の光方向変換機能
部を備えることにより、第２の光方向変換機能部が固体
撮像装置の各画素に入射した光を集光し・、第１の光方
向変換機能部が、その集光した光を光電変換素子に垂直
に近い角度で光電変換素子に入射させことができるので
、感度の増加とスミア・ノイズの低減を同時に実現し、
Ｓ／Ｎの向上を実現することが出来る。Effects of the Invention As described above, the solid-state imaging device of the present invention includes a first light direction conversion function section above the photoelectric conversion element, and a second light direction conversion function section above the first light direction conversion function section. By providing the light direction conversion function section, the second light direction conversion function section collects the light incident on each pixel of the solid-state imaging device, and the first light direction conversion function section collects the focused light. can be incident on the photoelectric conversion element at an angle close to perpendicular to the photoelectric conversion element, increasing sensitivity and reducing smear noise at the same time.
It is possible to realize an improvement in S/N.
第１図は本発明の固体撮像装置の第１の実施例を示す断
面図、第２図は本発明の固体撮像装置の第２の実施例を
示す断面図、第３図は本発明の固体撮像装置の第３の実
施例を示す断面図、第４図は本発明の固体撮像装置の第
４の実施例を示す断面図、第５図は従来の固体撮像装置
を示す断面図、第６図は従来の固体撮像装置の凸型マイ
クロレンズの集光の様子を示す概略断面図である。
１０１．２０１．３０１．４０１・・・半導体基板、１
０２．２０２．３０２．４０２・・・光電変換素子、１
０３、２０３、３０３、４０３−−−絶縁膜、 １０４
．２０４．３０４．４０４・・・転送電極部、１０５．
２０５．３０５．４０５・・・遮光部、１０６．２０６
．３０６．４０６・・・表面保護膜、１０７．２０７．
３０７・・・平坦化層、１０８．２１１．３０８・・・
凹型マイクロレンズ層、１０９．２１２．４０８・・・
レンズ・レンズ間層、１１０．２１３．３１３．４０９
・・・凸型マイクロレンズ層、１１１．２１４．３１４
．４１０・・・保護膜、２０８．３１Ｏ・・・カラーフ
ィルター層、２０９．３１１・・・中間層、２１０．３
１２・・・カラーフィルター・レンズ間層、３０９・・
・レンズ・カラーフィルター間層、４０７・・・凹型マ
イクロレンズ層。
代理人 弁理士 松 １）正 道
第 １！！Ｉ
Ｉｆ Ｊ ： 渾鰻膜
第２図
第 ３ 図
九 −Ｌ 九
第４図
丸 Ｌ 九
第５図
九 九FIG. 1 is a cross-sectional view showing a first embodiment of the solid-state imaging device of the present invention, FIG. 2 is a cross-sectional view showing a second embodiment of the solid-state imaging device of the present invention, and FIG. 4 is a sectional view showing a third embodiment of the imaging device; FIG. 4 is a sectional view showing the fourth embodiment of the solid-state imaging device of the present invention; FIG. 5 is a sectional view showing a conventional solid-state imaging device; The figure is a schematic cross-sectional view showing how light is collected by a convex microlens of a conventional solid-state imaging device. 101.201.301.401...Semiconductor substrate, 1
02.202.302.402...Photoelectric conversion element, 1
03, 203, 303, 403---Insulating film, 104
．． 204.304.404...transfer electrode section, 105.
205.305.405... Light shielding part, 106.206
．． 306.406...Surface protective film, 107.207.
307... Flattening layer, 108.211.308...
Concave microlens layer, 109.212.408...
Lens and interlens layer, 110.213.313.409
...Convex microlens layer, 111.214.314
．． 410... Protective film, 208.31O... Color filter layer, 209.311... Intermediate layer, 210.3
12...Color filter/lens interlayer, 309...
-Lens/color filter interlayer, 407...concave microlens layer. Agent Patent Attorney Matsu 1) Tadashi Michi No. 1! ! I If J: Armillary Membrane Figure 2 Figure 3 Figure 9 -L 9 Figure 4 Circle L 9 Figure 5 9 9
Claims (1)
、前記光電変換素子の上方に第１の光方向変換機能部と
、前記第１の光方向変換機能部の上方に第２の光方向変
換機能部とを備え、前記第１の光方向変換機能部が入射
光を前記光電変換素子表面の開口部に垂直な方向に近く
なるように変換出来、前記第２の光方向変換機能部が入
射光を前記第１の光方向変換機能部の上部に集光するよ
うになっていることを特徴とする固体撮像装置。（２）
半導体基板に形成された複数個の光電変換素子と、前記
光電変換素子の上方に形成された凹型マイクロレンズ層
と、前記凹型マイクロレンズ層の上方に形成された凸型
マイクロレンズ層とを備えたことを特徴とする固体撮像
装置。 （３）半導体基板に形成された複数個の光電変換素子と
、前記光電変換素子の上方に形成されたカラーフィルタ
ー層と、前記カラーフィルター層の上方に形成された凹
型マイクロレンズ層と、前記凹型マイクロレンズ層の上
方に形成された凸型マイクロレンズ層とを備えたことを
特徴とする固体撮像装置。 （４）半導体基板に形成された複数個の光電変換素子と
、前記光電変換素子の上方に形成された凹型マイクロレ
ンズ層と、前記凹型マイクロレンズ層の上方に形成され
たカラーフィルター層と、前記カラーフィルター層の上
方に形成された凸型マイクロレンズ層とを備えたことを
特徴とする固体撮像装置。 （５）半導体基板に形成された複数個の光電変換素子と
、前記光電変換素子の上方に形成されな凹型マイクロレ
ンズ層と、前記凹型マイクロレンズ層の上方に形成され
た凸型マイクロレンズ層とを備え、前記凹型マイクロレ
ンズ層が平坦層を兼ねることを特徴とする固体撮像装置
。Scope of Claims: (1) A plurality of photoelectric conversion elements formed on a semiconductor substrate, a first light direction conversion function part above the photoelectric conversion elements, and a first light direction conversion function part. a second light direction conversion function section above, the first light direction conversion function section converting the incident light in a direction close to perpendicular to the opening on the surface of the photoelectric conversion element; A solid-state imaging device characterized in that the light direction conversion function section collects incident light onto an upper part of the first light direction conversion function section. (2)
comprising a plurality of photoelectric conversion elements formed on a semiconductor substrate, a concave microlens layer formed above the photoelectric conversion element, and a convex microlens layer formed above the concave microlens layer. A solid-state imaging device characterized by: (3) a plurality of photoelectric conversion elements formed on a semiconductor substrate, a color filter layer formed above the photoelectric conversion element, a concave microlens layer formed above the color filter layer, and a concave microlens layer formed above the color filter layer; A solid-state imaging device comprising: a convex microlens layer formed above a microlens layer. (4) a plurality of photoelectric conversion elements formed on a semiconductor substrate; a concave microlens layer formed above the photoelectric conversion element; a color filter layer formed above the concave microlens layer; A solid-state imaging device comprising a convex microlens layer formed above a color filter layer. (5) a plurality of photoelectric conversion elements formed on a semiconductor substrate, a concave microlens layer not formed above the photoelectric conversion element, and a convex microlens layer formed above the concave microlens layer; A solid-state imaging device, characterized in that the concave microlens layer also serves as a flat layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2335103A JP2558389B2 (en) | 1990-11-29 | 1990-11-29 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2335103A JP2558389B2 (en) | 1990-11-29 | 1990-11-29 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04199874A true JPH04199874A (en) | 1992-07-21 |
| JP2558389B2 JP2558389B2 (en) | 1996-11-27 |
Family
ID=18284807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2335103A Expired - Fee Related JP2558389B2 (en) | 1990-11-29 | 1990-11-29 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2558389B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06125070A (en) * | 1992-10-09 | 1994-05-06 | Mitsubishi Electric Corp | Solid-state image sensing device and manufacture thereof |
| US5691548A (en) * | 1993-09-28 | 1997-11-25 | Sharp Kabushiki Kaisha | Solid state imaging device having high sensitivity and exhibiting high degree of light utilization and method of manufacturing the same |
| EP0948055A2 (en) * | 1998-03-19 | 1999-10-06 | Canon Kabushiki Kaisha | Solid-state image pickup device |
| EP1360728A1 (en) * | 2000-12-28 | 2003-11-12 | Atmel Grenoble S.A. | Integrated-circuit technology photosensitive sensor |
| EP1414074A2 (en) * | 2002-10-25 | 2004-04-28 | Hua Wei Semiconductor (Shanghai) Co., Ltd | Image sensor having reduced stress color filters and method of making |
| GB2423416A (en) * | 2005-02-01 | 2006-08-23 | Agilent Technologies Inc | Image sensor with embedded optical element |
| JP2008218650A (en) * | 2007-03-02 | 2008-09-18 | Fujifilm Corp | Solid photographing element |
| JP2012182430A (en) * | 2011-02-09 | 2012-09-20 | Canon Inc | Photoelectric conversion device |
| JP2017069506A (en) * | 2015-10-02 | 2017-04-06 | エルジー ディスプレイ カンパニー リミテッド | Thin film photosensor, two-dimensional array sensor, and display for mobile with fingerprint sensor |
| WO2020145218A1 (en) * | 2019-01-10 | 2020-07-16 | 富士フイルム株式会社 | Structure, solid-state imaging element, and image display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007180156A (en) | 2005-12-27 | 2007-07-12 | Fujifilm Corp | Solid-state imaging element |
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|---|---|---|---|---|
| JPS60145776A (en) * | 1984-01-09 | 1985-08-01 | Matsushita Electronics Corp | Solid-state image pickup device |
| JPH02103962A (en) * | 1988-10-13 | 1990-04-17 | Toshiba Corp | Solid-state image sensing device and manufacture thereof |
| JPH03283572A (en) * | 1990-03-30 | 1991-12-13 | Sony Corp | Solid-state image pick up element |
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1990
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| JPS60145776A (en) * | 1984-01-09 | 1985-08-01 | Matsushita Electronics Corp | Solid-state image pickup device |
| JPH02103962A (en) * | 1988-10-13 | 1990-04-17 | Toshiba Corp | Solid-state image sensing device and manufacture thereof |
| JPH03283572A (en) * | 1990-03-30 | 1991-12-13 | Sony Corp | Solid-state image pick up element |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06125070A (en) * | 1992-10-09 | 1994-05-06 | Mitsubishi Electric Corp | Solid-state image sensing device and manufacture thereof |
| US5691548A (en) * | 1993-09-28 | 1997-11-25 | Sharp Kabushiki Kaisha | Solid state imaging device having high sensitivity and exhibiting high degree of light utilization and method of manufacturing the same |
| EP0948055B1 (en) * | 1998-03-19 | 2007-04-11 | Canon Kabushiki Kaisha | Solid-state image pickup device |
| EP0948055A2 (en) * | 1998-03-19 | 1999-10-06 | Canon Kabushiki Kaisha | Solid-state image pickup device |
| EP1360728A1 (en) * | 2000-12-28 | 2003-11-12 | Atmel Grenoble S.A. | Integrated-circuit technology photosensitive sensor |
| EP1414074A2 (en) * | 2002-10-25 | 2004-04-28 | Hua Wei Semiconductor (Shanghai) Co., Ltd | Image sensor having reduced stress color filters and method of making |
| GB2423416A (en) * | 2005-02-01 | 2006-08-23 | Agilent Technologies Inc | Image sensor with embedded optical element |
| JP2008218650A (en) * | 2007-03-02 | 2008-09-18 | Fujifilm Corp | Solid photographing element |
| JP2012182430A (en) * | 2011-02-09 | 2012-09-20 | Canon Inc | Photoelectric conversion device |
| JP2017069506A (en) * | 2015-10-02 | 2017-04-06 | エルジー ディスプレイ カンパニー リミテッド | Thin film photosensor, two-dimensional array sensor, and display for mobile with fingerprint sensor |
| WO2020145218A1 (en) * | 2019-01-10 | 2020-07-16 | 富士フイルム株式会社 | Structure, solid-state imaging element, and image display device |
| JPWO2020145218A1 (en) * | 2019-01-10 | 2021-11-04 | 富士フイルム株式会社 | Structure, solid-state image sensor and image display device |
| US11961860B2 (en) | 2019-01-10 | 2024-04-16 | Fujifilm Corporation | Structural body, solid-state imaging element, and image display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2558389B2 (en) | 1996-11-27 |
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