JP3049856B2 - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- JP3049856B2 JP3049856B2 JP3196347A JP19634791A JP3049856B2 JP 3049856 B2 JP3049856 B2 JP 3049856B2 JP 3196347 A JP3196347 A JP 3196347A JP 19634791 A JP19634791 A JP 19634791A JP 3049856 B2 JP3049856 B2 JP 3049856B2
- Authority
- JP
- Japan
- Prior art keywords
- solid
- imaging device
- state imaging
- lens
- microlens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は固体撮像素子に関し、特
にマイクロレンズ搭載の固体撮像素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device, and more particularly to a solid-state image pickup device equipped with a microlens.
【０００２】[0002]
【従来の技術】従来の固体撮像素子は図３に示す構造に
なっている。半導体基板１の表面に光電変換を行うフォ
トダイオード部２と前記フォトダイオード部２で蓄えら
れた電荷を転送する転送ＣＣＤ部３を有している。さら
に基板１の表面には酸化膜４を介して、入射光量を規定
し、前記転送ＣＣＤ部３に光が漏れ込まないようにする
ための遮光膜５を有している。2. Description of the Related Art A conventional solid-state imaging device has a structure shown in FIG. The semiconductor device includes a photodiode unit 2 for performing photoelectric conversion on the surface of a semiconductor substrate 1 and a transfer CCD unit 3 for transferring electric charges stored in the photodiode unit 2. Further, on the surface of the substrate 1, there is provided a light-shielding film 5 for regulating the amount of incident light via an oxide film 4 so as to prevent light from leaking into the transfer CCD section 3.
【０００３】さらに、その上部にはベース層６を介して
光をフォトダイオード部２に集光させるためのレンズ層
７を有している。このマイクロレンズは通常、図４に示
す平面図のように、真四角に近い形になっている。他の
形として球形や各画素を分離しないストライプパターン
があるが、集光率の点で真四角が一番よい。Further, a lens layer 7 for condensing light on the photodiode section 2 via a base layer 6 is provided on the upper part thereof. The microlens is generally shaped like a square as shown in the plan view of FIG. Other shapes include a sphere and a stripe pattern that does not separate each pixel, but a square is best in terms of light collection rate.
【０００４】[0004]
【発明が解決しようとする課題】この従来の固体撮像素
子ではマイクロレンズが図４に示すような構造になって
いる。したがって、図４のＣ−Ｃ′線での断面（図３
（ａ））ではレンズ厚やベース層を最適化すれば垂直入
射光だけでなく斜め入射光においても確実にフォトダイ
オードに入射するようにできる。しかし、図４のＤ−
Ｄ′線での位置（図３（ｂ））ではレンズ厚が薄くなっ
てしまうので、焦点が深くなり、図５に示すように、斜
め入射光のすべてを入射できなくなってしまう。In this conventional solid-state imaging device, the microlens has a structure as shown in FIG. Therefore, the cross section taken along the line CC ′ in FIG.
In (a)), by optimizing the lens thickness and the base layer, not only vertically incident light but also obliquely incident light can be surely incident on the photodiode. However, D- in FIG.
At the position along the line D '(FIG. 3B), the lens thickness becomes thin, so that the focal point becomes deep, and as shown in FIG. 5, all the obliquely incident light cannot be incident.
【０００５】ところで図６のように固体撮像素子９の中
央部と周辺部ではカメラレンズ８から入射される光の角
度が周辺部のほうが大きくなる為、フォトダイオードへ
の入射光量が中央部に比べ、周辺部では低下してしまう
という欠点がある。この対策として、レンズを球形や、
各画素を分離しないストライプパターンにより解決でき
るが、入射光量が減少するという欠点がある。By the way, as shown in FIG. 6, the angle of the light incident from the camera lens 8 is located at the center and the periphery of the solid-state imaging device 9.
Since the degree is higher in the peripheral part, there is a disadvantage that the amount of light incident on the photodiode is lower in the peripheral part than in the central part. As a countermeasure, the lens should be spherical or
This can be solved by a stripe pattern that does not separate each pixel, but has the disadvantage that the amount of incident light decreases.
【０００６】[0006]
【課題を解決するための手段】本発明の固体撮像素子は
複数の光電変換領域と、光を集光するマイクロレンズを
有していて、前記マイクロレンズの形状が、各画素毎に
分離していてかつ、マイクロレンズの焦点の深さが画素
内で同一平面上にあることを特徴とする。The solid-state imaging device according to the present invention has a plurality of photoelectric conversion regions and a microlens for condensing light, and the shape of the microlens is separated for each pixel. In addition, the depth of focus of the microlens is on the same plane within the pixel.
【０００７】[0007]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例の固体撮像素子の断面図で
ある。図２は本発明の一実施例の固体撮像素子の平面図
である。尚、図２のＡ−Ａ′線，Ｂ−Ｂ′線で切った断
面図がそれぞれ図１の（ａ），（ｂ）図に相当する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of a solid-state imaging device according to one embodiment of the present invention. FIG. 2 is a plan view of a solid-state imaging device according to one embodiment of the present invention. The cross-sectional views taken along line AA 'and line BB' in FIG. 2 correspond to FIGS. 1A and 1B, respectively.
【０００８】半導体基板１の表面にフォトダイオード
２，転送ＣＣＤ部３を有していて、さらにその上部に酸
化膜４を介して遮光膜５を有している。その上部にはベ
ース層６を介してレンズ層７を有している。このレンズ
層は図２に示すようにＡ−Ａ′線からＢ−Ｂ′線にいく
につれてレンズ幅が減少する構造になっている。この幅
はレンズの焦点が常に同じ深さになるように設定されて
いる。A photodiode 2 and a transfer CCD section 3 are provided on the surface of a semiconductor substrate 1, and a light-shielding film 5 is further provided thereon with an oxide film 4 interposed therebetween. On the upper part, a lens layer 7 is provided via a base layer 6. As shown in FIG. 2, this lens layer has a structure in which the lens width decreases from the line AA 'to the line BB'. This width is set so that the focal point of the lens always has the same depth.
【０００９】[0009]
【発明の効果】以上説明したように本発明は、マイクロ
レンズの焦点の深さが画素内で一定の高さで最適化でき
るので、素子面内で入射光角度が異ってもフォトダイオ
ードへの入射光は均一になる。As described above, according to the present invention, the depth of the focal point of the microlens can be optimized at a constant height within the pixel, so that even if the incident light angle differs in the element plane, the present invention can be applied to the photodiode. Becomes uniform.
【図１】本発明の一実施例の断面図。FIG. 1 is a sectional view of one embodiment of the present invention.
【図２】本発明の一実施例の平面図。FIG. 2 is a plan view of one embodiment of the present invention.
【図３】従来の断面図。FIG. 3 is a conventional sectional view.
【図４】従来の平面図。FIG. 4 is a conventional plan view.
【図５】フォトダイオードの入射光量の入射角度依存性
を示した図。FIG. 5 is a diagram showing the incident angle dependency of the amount of incident light of a photodiode.
【図６】カメラレンズと固体撮像素子の相対位置を示し
た図。FIG. 6 is a diagram showing a relative position between a camera lens and a solid-state imaging device.
１ 半導体基板 ２ フォトダイオード ３ 転送ＣＣＤ部 ４ 酸化膜 ５ 遮光膜 ６ ベース層 ７ レンズ層 ８ カメラレンズ ９ 固体撮像素子。 Reference Signs List 1 semiconductor substrate 2 photodiode 3 transfer CCD section 4 oxide film 5 light shielding film 6 base layer 7 lens layer 8 camera lens 9 solid-state image sensor.
Claims (1)
生成した電荷を転送・出力する転送部と、前記光電変換
領域上に光を集光するマイクロレンズを有する固体撮像
素子において、前記マイクロレンズの形状が各画素毎に
分離していて、かつ、前記マイクロレンズの焦点の深さ
が画素内で同一平面上にあるように、前記マイクロレン
ズの平面形状を樽状にしたことを特徴とする固体撮像素
子。1. A solid-state imaging device comprising: a plurality of photoelectric conversion regions; a transfer unit configured to transfer and output charges generated in the photoelectric conversion regions; and a microlens that collects light on the photoelectric conversion regions. the shape of the lens is not separated for each pixel, and, as the depth of focus of the microlens are coplanar in a pixel, the microlenses
A solid-state imaging device , wherein the plane shape of the lens is barrel-shaped .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3196347A JP3049856B2 (en) | 1991-08-06 | 1991-08-06 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3196347A JP3049856B2 (en) | 1991-08-06 | 1991-08-06 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0540201A JPH0540201A (en) | 1993-02-19 |
| JP3049856B2 true JP3049856B2 (en) | 2000-06-05 |
Family
ID=16356330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3196347A Expired - Fee Related JP3049856B2 (en) | 1991-08-06 | 1991-08-06 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3049856B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6995800B2 (en) | 2000-01-27 | 2006-02-07 | Canon Kabushiki Kaisha | Image pickup apparatus utilizing a plurality of converging lenses |
| KR100467978B1 (en) * | 2001-08-20 | 2005-01-24 | (주)시아이센서 | Method for manufacturing optimum in image sensor by using 3 dimension simulation |
-
1991
- 1991-08-06 JP JP3196347A patent/JP3049856B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0540201A (en) | 1993-02-19 |
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