JPS5990467A - Solid-state image pickup element - Google Patents
Solid-state image pickup elementInfo
- Publication number
- JPS5990467A JPS5990467A JP57201297A JP20129782A JPS5990467A JP S5990467 A JPS5990467 A JP S5990467A JP 57201297 A JP57201297 A JP 57201297A JP 20129782 A JP20129782 A JP 20129782A JP S5990467 A JPS5990467 A JP S5990467A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- photodiode
- lens
- state image
- microlens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000003384 imaging method Methods 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 238000002161 passivation Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- WLWIMKWZMGJRBS-UHFFFAOYSA-N primin Chemical compound CCCCCC1=CC(=O)C=C(OC)C1=O WLWIMKWZMGJRBS-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229940114081 cinnamate Drugs 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- IXFOBQXJWRLXMD-ZIQFBCGOSA-N para-nitrophenyl 1-thio-β-d-glucopyranoside Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1SC1=CC=C([N+]([O-])=O)C=C1 IXFOBQXJWRLXMD-ZIQFBCGOSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000182 polyphenyl methacrylate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、固体撮像素子、特にフォトダイオード等の
受光部の寸法を大きくすることなく、光入力の信号レベ
ルを高め、素子感度を向上させた固体撮像素子に関する
ものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention increases the signal level of optical input and improves the element sensitivity without increasing the dimensions of the light receiving part of a solid-state image sensor, especially a photodiode. It relates to solid-state image sensors.
固体撮像素子は、いわゆる家庭用カラービデオカメラの
他放送用、業務用においても急速に使用される傾向にあ
シ、産業用イメージセンサとしてもその可能性が極めて
大きいと考えられる。そして、この固体撮像素子は、カ
ラー、モノクロを問わず、種々の方式、例えばＭＯＳ（
Ｍｅｔａｌ ０ｘｉｄｅＳｉｌｉｃｏｎ）形やＣＣＤ（
Ｃｈａｒｇｅ Ｃｏｐｉｅｄ Ｄｅｖｉｃｅ）形やこれ
らの折中した方式のＣＰＤ（ＣｈａｒｇｅＰｒｉｍｉｎ
ｇ Ｄｅｖｉｅｅ）形などが開発されている。Solid-state image sensing devices are rapidly being used in so-called home color video cameras as well as broadcasting and business uses, and it is thought that they have great potential as industrial image sensors as well. This solid-state image sensor can be used in various formats, such as MOS (MOS), regardless of color or monochrome.
Metal Oxide Silicon) and CCD (
CPD (Charge Copied Device) type and CPD (Charge Primin) type
g Devie) type etc. have been developed.
しかしながら、これらの方式による固体撮像素子の性能
としては、方式によ）一長一短があシ、例えばＭＯＳ形
では従来のＭＯＳ−ＬＳＩの製造技術による量産が可能
でかつ開口率、つまｂ撮像素子全体の中で占める受光面
積の割合が前記３方式中最大であるが、ノイズが大きい
こと、またＣＣＤ形ではノイズが少なく、低照度で使用
可能であるが、開口率が小さく残像が残るなどの問題が
ある。However, the performance of solid-state image sensors using these methods has advantages and disadvantages depending on the method.For example, the MOS type can be mass-produced using conventional MOS-LSI manufacturing technology, and the aperture ratio and overall size of the image sensor are low. The ratio of the light-receiving area is the largest among the three methods, but the noise is large, and although the CCD type has less noise and can be used in low illumination, it has problems such as a small aperture ratio and residual image retention. be.
このため、いずれの方式においても短所をなくし、長所
をよシ一層高めるべき努力がなされているが、撮像素子
においては、光入力信号（Ｓ）は一般に量子効率と開口
率と被写体照度との積で決まるとされている。そこで、
種々の検討改良の結果、現在では量子効率（光電変換効
率）は既にほぼ１に達しておシ、このため開口率を大き
くして取シ出せる信号量を大きくすることと、雑音を小
さくすることが考えられている。このうち開口率を大き
くすることについては、例えば構造的に開口率を大きく
とれるＭＯＳ形においてもその開口率は既に５０〜６０
チ近傍に達しておシ、これ以上開口率を高めるには転送
用Ａｌ線の配線幅を現在の３μｍルールから２μｍ 、
１μｍへと細くしなければならない。しかしながら、
配線幅を細くすることはプロセス上、極めて困難を伴な
い、まだ近い将来に実現する可能性の高い撮像素子その
ものの小形化、つまシ現在の７４インチ形から７２イン
チ形への小形化や高品質画像テレビに対応するだめの画
素自体の小形化・高密度化（画素数４００Ｘ５００程度
から１０００ｘ１０００ないしそれ以上）等を考慮する
と、開口率のこれ以上の拡大は不可能と考えられ、むし
ろこの開口率は画素数が増大するにしたがって減少する
と考えられる。For this reason, efforts are being made to eliminate the disadvantages and further enhance the advantages of both methods, but in image sensors, the optical input signal (S) is generally a product of quantum efficiency, aperture ratio, and object illuminance. It is said that it is determined by Therefore,
As a result of various studies and improvements, the quantum efficiency (photoelectric conversion efficiency) has now reached almost 1. Therefore, it is necessary to increase the aperture ratio to increase the amount of signal that can be extracted and to reduce noise. is considered. Regarding increasing the aperture ratio, for example, even in the MOS type, which can have a large aperture ratio structurally, the aperture ratio is already 50 to 60.
In order to further increase the aperture ratio, the wiring width of the transfer Al line must be increased from the current 3 μm rule to 2 μm.
The thickness must be reduced to 1 μm. however,
Reducing the wiring width is extremely difficult in terms of process, and it is expected that the size of the image sensor itself is likely to be realized in the near future. Considering the miniaturization and increase in density of the pixels themselves (from about 400 x 500 pixels to 1000 x 1000 or more) that correspond to quality image TVs, it is thought that it is impossible to further increase the aperture ratio; It is believed that the rate decreases as the number of pixels increases.
仁の発明は、固体撮像素子の性能を向上させることを目
的として、前述のような困難なプロセスを避け、かつ高
密度化に対応するために固体撮像素子上の各画素上に微
小な凸形集光レンズ（以下単にマイクロレンズと称する
）を設けることによシ、各画素に入射する光信号を増大
させ、見掛は上、開口率を拡大したのと同等な効果を得
て光信号強度を高めることを可能にした固体撮像素子を
提供するものである。Jin's invention aims to improve the performance of solid-state image sensors by creating a small convex shape on each pixel on the solid-state image sensor in order to avoid the difficult process described above and to cope with higher density. By providing a condensing lens (hereinafter simply referred to as a microlens), the optical signal incident on each pixel is increased, and the optical signal strength is increased by obtaining an effect equivalent to increasing the aperture ratio, although the appearance is better. The object of the present invention is to provide a solid-state imaging device that makes it possible to increase the image quality.
この発明によるマイクロレンズの固体撮像素子上への設
置は、例えばモノリシック形としては、固体撮像素子上
のパッシベーション膜上に直接的に設置する方法、この
パッシベーション膜そのものをレンズ状に加工する方法
、カラー固体撮像素子においてはカラーフィルタ上の表
面保護膜上に直接的に設置する方法およびこの保護膜そ
のものをレンズ状に加工する方法などがある。また、貼
シ合わせ方式も可能で光学的透明なガラス板やカラー固
体撮像素子用カラーフィルタの表面もしくは裏面にこの
マイクロレンズを形成した後、固体撮像素子と正確に貼
合せて適用できる。以上のようにこの発明によるマイク
ロレンズの設置は種々の方法が可能であるが、もとよシ
前述の方法のみに限定されるものではない。The microlens according to the present invention can be installed on a solid-state image sensor, for example, as a monolithic type, by directly installing it on the passivation film on the solid-state image sensor, by processing the passivation film itself into a lens shape, by color For solid-state image sensing devices, there are two methods, including a method of directly installing a surface protective film on a color filter and a method of processing this protective film itself into a lens shape. In addition, a bonding method is also possible, and after forming the microlens on the front or back surface of an optically transparent glass plate or a color filter for a color solid-state image sensor, it can be applied by accurately bonding it to the solid-state image sensor. As described above, the microlens according to the present invention can be installed in various ways, but is not limited to the above-mentioned methods.
このようにこの発明によるマイクロレンズは各々のフォ
トダイオード、つまシ画素上にアシ、かつこのフォトダ
イオードの配列に正確に一致していることが必要である
。さらに、このマイクロレンズの大きさとしては、フォ
トダイオードと同等ないしはそれ以上大きいことが必須
であるが、その形状は第１図（、）〜（Ｃ）に平面図で
示すようにフォトダイオード（１）に対してマイクロレ
ンズＱ）が同図（、）の如く円形状である必要はなく、
フォトダイオード（１）の形状によっては同図（ｂ）の
如く矩形もしくは同図（ｃ）の如く楕円形ででも良く、
あるいはフォトダイオード（１）と同等の形状でも良い
。まだ、このマイクロレンズ（２）の表面形状は例えば
第２図（、）に示す如く単一の曲率を有することが望ま
しいが、必ずしもこれに限定されるものではなく、第２
図（ｂ）に示す如く中央部は平坦でその周辺部分がフォ
トダイオード（１）上に集光可能な所望の曲率を有して
おればこの発明の目的は十分に達成せられる。As described above, the microlens according to the present invention requires a reed on each photodiode and border pixel, and that the arrangement of the photodiodes precisely matches. Furthermore, it is essential that the size of this microlens is equal to or larger than that of a photodiode, but its shape is similar to that of a photodiode (1 ), the microlens Q) does not need to be circular as shown in the figure (,);
Depending on the shape of the photodiode (1), it may be rectangular as shown in the figure (b) or oval as shown in the figure (c).
Alternatively, it may have the same shape as the photodiode (1). Although it is desirable that the surface shape of this microlens (2) has a single curvature, for example as shown in FIG.
As shown in Figure (b), the object of the present invention can be fully achieved if the center part is flat and the peripheral part has a desired curvature that allows light to be focused onto the photodiode (1).
さらに第２図（ａ） 、 （ｂ、）の場合でも各マイク
ロレンズ（２）が完全に分離している必要はなく、第２
図（ｅ）に示すよう人連続的な形状であってもこの発明
の目的は達せられる。なお、第２図（ａ） 、 （ｂ）
、 （Ｃ）において、（３）ハシリコン基Ｌ （４）
はパッシベーション膜、（５）は中間膜である。また、
このマイクロレンズ（２）の曲率半径はこのマイクロレ
ンズ（２）の厚さや大きさ、フォトダイオード（１）の
大きさ、マイクロレンズ（２）とフォトダイオード（１
）との間の距離さらにはマイクロレンズ（２）およびそ
の下地の屈折率等によって異なり、種々の場合に応じて
適切な値を定めることが必要である。例えばマイクロレ
ンズ（２）とフォトダイオード（１）との間の距離を約
５μｍ、フォトダイオード（１）の口径を約１０μｍ、
マイクロレンズ（２）の口径を約１６μｍ とすると、
好ましいマイクロレンズ（２）の厚さは約１．５〜３．
０μｍ、このマイクロレンズ（２）の屈折率ｎ２ζ１．
５程度の場合の曲率半径は約１５〜３０μｍが好ましい
。また、このマイクロレンズ（２）の諸次元はもとより
前記例にのみに限定されるものではなく、固体撮像素子
のフォトダイオード形状によっては前記例とは異なった
諸次元を有することも可能である。Furthermore, even in the cases of Fig. 2 (a) and (b), it is not necessary that each microlens (2) be completely separated;
The object of the present invention can be achieved even with a continuous shape as shown in Figure (e). In addition, Fig. 2 (a) and (b)
, (C), (3) silicon group L (4)
is a passivation film, and (5) is an intermediate film. Also,
The radius of curvature of this microlens (2) depends on the thickness and size of this microlens (2), the size of photodiode (1), microlens (2) and photodiode (1).
) as well as the refractive index of the microlens (2) and its base, and it is necessary to determine an appropriate value depending on various cases. For example, the distance between the microlens (2) and the photodiode (1) is approximately 5 μm, the diameter of the photodiode (1) is approximately 10 μm,
Assuming that the diameter of the microlens (2) is approximately 16 μm,
The preferred thickness of the microlens (2) is about 1.5-3.
0 μm, the refractive index of this microlens (2) n2ζ1.
In the case of about 5, the radius of curvature is preferably about 15 to 30 μm. Further, the dimensions of this microlens (2) are not limited to the above example, and may have dimensions different from the above example depending on the shape of the photodiode of the solid-state image sensor.
さらに前記第１図、第２図においては、簡単のためマイ
クロレンズＣ２）の下地、すなわち中間膜（５）は平坦
かつマイクロレンズ（２）と同等の屈折率（ｎ２）を有
するものとして説明したが、固よりかかる例のみに限定
されるものではなく、下地つｔ、ｂ中間膜（５）を加工
することによシ、第３図（、）の如く凸形である場合や
第３図（ｂ）の如く凹形であっても差支えない。なお、
図中同一符号は同一または相当部分を示す。Furthermore, in FIGS. 1 and 2, for the sake of simplicity, it is assumed that the base of the microlens C2, that is, the intermediate film (5), is flat and has the same refractive index (n2) as the microlens (2). However, this is not limited to cases in which the base layer and the interlayer film (5) are formed into a convex shape as shown in FIG. It may be concave as shown in (b). In addition,
The same reference numerals in the figures indicate the same or corresponding parts.
以上のようにマイクロレンズ（２）の構成を簡単のため
第２図および第３図を用いて説明したが、カラー固体撮
像素子の場合においては中間膜（５）の部分に色フィル
タおよび分離膜が設けられる。また保護膜としてマイク
ロレンズ（２）上に有機おるいは無機の透明な薄膜を設
けることも可能である。As mentioned above, the configuration of the microlens (2) was explained using FIGS. 2 and 3 for simplicity, but in the case of a color solid-state image sensor, a color filter and a separation film are used in the intermediate film (5). is provided. It is also possible to provide an organic or inorganic transparent thin film on the microlens (2) as a protective film.
また、この発明に係わるマイクロレンズ（２）の材質と
しては、光学的に無色透明かつ安定で、厚さ０．５〜５
． Ｏ１１，ｍ程度の薄膜形成および種々の微細加工技
術による成形が容易でアシ、かつこれらの加工プロセス
条件に耐えられるものであれば、無機材料または有機材
料を問わず適用可能である。Furthermore, the material of the microlens (2) according to the present invention is optically colorless, transparent and stable, and has a thickness of 0.5 to 5.
．． Any material, inorganic or organic, can be used as long as it is easy to form a thin film of about O11,m and to be molded by various microfabrication techniques, and can withstand these processing conditions.
具体的には、無機材料としては透明な薄膜形成が可能な
酸化シリコン、酸化亜鉛、酸化アルミニウム、酸化ジル
コニウム、酸化インジウム、ＰＳＧおよびチツ化シリコ
ン等、あるいはこれらを組合せたもの等が挙げられる。Specifically, examples of the inorganic material include silicon oxide, zinc oxide, aluminum oxide, zirconium oxide, indium oxide, PSG, and silicon oxide, which can form a transparent thin film, or a combination thereof.
また、有機材料とじては、ポリメチルメタクリレート、
ポリエチルメタクリレート、ポリイソプロピルメタクリ
レート。In addition, examples of organic materials include polymethyl methacrylate,
Polyethyl methacrylate, polyisopropyl methacrylate.
ポリフェニルメタクリレート、ポリクリシジルメタクリ
レート等の光透過性の良いメタクリレート系ポリマーお
よびコポリマーさらにポリスチレン。Methacrylate polymers and copolymers with good light transmittance such as polyphenyl methacrylate and polycricidyl methacrylate, as well as polystyrene.
ポリケイ皮酸ビニル、ポリイソプロペニルケトン等のポ
リマーおよびコポリマー並びにこれらのポリマーを主成
分としたコポリマーや側鎖もしくは主鎖の一部を塩素、
フッ素、ヨウ素等でハロゲン化したポリマーおよびコポ
リマー等が挙げられる。Polymers and copolymers such as polyvinyl cinnamate and polyisopropenyl ketone, copolymers based on these polymers, and chlorine in the side chain or part of the main chain.
Examples include polymers and copolymers halogenated with fluorine, iodine, etc.
実施例１
画素数３８４Ｘ４８５を有するＭＯ８形固体撮像素子の
パッシベーション膜上にＰＳＧを約２μｍ程度成膜し、
これを加工してレンズ厚約１．５μｍ。Example 1 PSG was deposited to a thickness of approximately 2 μm on the passivation film of an MO8 solid-state image sensor having 384×485 pixels.
This was processed to a lens thickness of approximately 1.5 μm.
曲率半径３０μｍ程度の第２図（ｂ）に示すようなマイ
クロレンズ（２）の配列を形成した。そして、各々のフ
ォトダイオード（１）よシ得られる光入力信号は、マイ
クロレンズ（２）を設置しない場合よシ２０〜３０チ程
度増加し、また画像の質もマイクロレンズ（２）の設置
前よシ向上させることができた。An array of microlenses (2) as shown in FIG. 2(b) with a radius of curvature of about 30 μm was formed. The optical input signal obtained from each photodiode (1) increases by about 20 to 30 cm compared to when the microlens (2) is not installed, and the quality of the image is also lower than before the microlens (2) is installed. I was able to improve it.
実施例２
画素数３８４Ｘ４８５を有するＭＯ８形カラー固体撮像
素子（モノリシック形）の保護膜上に屈折率１．４８程
度の有機材料によシレンズ厚さ約３μｍ。Example 2 A lens made of an organic material having a refractive index of about 1.48 and having a thickness of about 3 μm is placed on the protective film of an MO8 type color solid-state image sensor (monolithic type) having a pixel count of 384×485.
曲率半径２０１１ｍ 程度の第２図（、）に示すよう
な形状を有するマイクロレンズ（２）の配列を形成した
。An array of microlenses (2) having a radius of curvature of about 2011 m and a shape as shown in FIG. 2 (,) was formed.
このような構成によると、各々のフォトダイオード（１
）より得られる光入力信号は、マイクロレンズＱ）を設
置しない場合に比べて１５〜２０％程度向上した。また
色再現性や画質もマイクロレンズ（２）の設置前に比べ
て優れたものであった。According to such a configuration, each photodiode (1
) was improved by about 15 to 20% compared to the case where the microlens Q) was not installed. Furthermore, color reproducibility and image quality were also superior compared to before the microlens (2) was installed.
実施例３
カラー固体撮像素子用色フィルタを有するガラス基板の
裏面に屈折率１．５０程度の有機材料によシレンズ厚約
５μｍ、曲率半径１５μｍ程度の第２図（Ｃ）に示すよ
う匁マイクロレンズ（２）の配列を形成した。そして、
このマイクロレンズ（２）を有する色フィルタを、レン
ズ面を表に向けてＭＯ８形固体撮像素子のフォトダイオ
ード（１）列に一致するように貼シ付けしていわゆる貼
シ合せ形カラー固体撮像素子を形成した。そして各々の
フォトダイオード（１）よシ得られる光入力信号はマイ
クロレンズ（２）を設置しない場合に比べ、約２０％程
度向上し、かっ色再現性や画質はマイクロレンズＱ）の
設置前に比べて優れたものであった。Example 3 On the back side of a glass substrate having a color filter for a color solid-state image sensor, a microlens made of an organic material with a refractive index of about 1.50 was formed, as shown in FIG. 2(C), with a lens thickness of about 5 μm and a radius of curvature of about 15 μm. The array (2) was formed. and,
The color filter having the microlens (2) is pasted with the lens surface facing up so as to match the photodiode (1) row of the MO8 type solid-state image sensor to form a so-called pasted color solid-state image sensor. was formed. The optical input signal obtained from each photodiode (1) is improved by about 20% compared to when no microlens (2) is installed, and the brown color reproducibility and image quality are better than before installing the microlens (Q). It was excellent in comparison.
なお、前記実施例においては、ＭＯ８形固体撮像素子に
限って説明したが、この発明によるマイクロレンズａ＞
は前述の如く、他の方式の固体撮像素子にも適用可能で
ある。すなわち、この発明によるマイクロレンズ（２）
はいわゆる二次元のカラー固体撮像素子のみに限らず、
モノクロの固体撮像素子やさらには一次元の固体撮像素
子等にも設置可能である。またＭＯＳ形の固体撮像素子
の他、ＣＯＤ、ＣＰＤ、ＢＢＤ（Ｂｕｃｋｅｔ Ｂｒｉ
ｇａｄｅ Ｄｅｖｉｃｅ）お喧ＣＩＤ（Ｃｈａｒｇｅ
Ｉｎｊｅｃｔｉｏｎ Ｄｅｖｉｃｅ）形等の固体撮像素
子や赤外線固体撮像素子等にも適用できて前述と同等の
効果が得られる。In addition, in the above embodiment, the explanation was limited to the MO8 type solid-state image sensor, but the microlens a> according to the present invention
As mentioned above, it is also applicable to other types of solid-state imaging devices. That is, the microlens (2) according to the present invention
is not limited to so-called two-dimensional color solid-state image sensors;
It can be installed in a monochrome solid-state image sensor or even a one-dimensional solid-state image sensor. In addition to MOS solid-state image sensors, COD, CPD, and BBD (Bucket Bri
gade Device) CID (Charge)
The present invention can also be applied to solid-state imaging devices such as injection devices, infrared solid-state imaging devices, etc., and the same effects as described above can be obtained.
１ 以上のように固体撮像素子中の各々のフォトダイオ
ード上に無機もしくは有機材料からなる微小な凸形集光
レンズ（マイクロレンズ）をそれぞれ設けることによっ
て、開口率を増大したものと同等の効果、すなわちフォ
トダイオードに対する光入力信号を増大させる効果を、
固体撮像素子の構成寸法を変えることなく、実現でき感
度および色再現性を向上させる効果が得られる。1. As mentioned above, by providing a minute convex condensing lens (microlens) made of an inorganic or organic material on each photodiode in a solid-state image sensor, an effect equivalent to that of increasing the aperture ratio, In other words, the effect of increasing the optical input signal to the photodiode is
This can be achieved without changing the structural dimensions of the solid-state image sensor, and the effect of improving sensitivity and color reproducibility can be obtained.
第１図（ａ）・〜（Ｃ）はこの発明による固体撮像素子
の一例を示す要部平面図、第２図（＆）〜（Ｃ）は第１
図の要部断面図、第３図（ａ） 、 （ｂ）はこの発明
による固体撮像素子の他の実施例を示す要部断面図であ
る。
（１）・・・・フォトダイオード、（２）・・・・マイ
クロレンズ、（３）・・ｅ１１シリコン基板、＜４）−
・・・パッシベーション膜、（５）・・・・中間膜。
代理人 葛 野 信 −
手続補正書（自発）
特許庁長官殿
１、事件の表示 特願昭 ５７−２０１２９７号
２、発明の名称
固体撮像素子
３、補正をする者
事件との関係 特許出願人
住 所 東京都千代田区丸の内二丁［１２番３
号名 称（６０１） 三菱電機株式会社代表者片由
仁八部
４、代理人
住 所 東京都千代田区丸の内二Ｊ十１２番３
翼・５、補正の対象
明細書の発明の詳細な説明の欄
６、補正の内容
（１）明細書第２頁第１５行目の［ＣＣＤ （Ｃｈａｒ
ｇｅＣｏｐｌｅｄ Ｄｅｖｉｃｅ ） Ｊを［ＣＣＤ
（Ｃｈａｒｇｅ ＣｕｐｌｅｄＤｅｖｉｃｅ ） Ｊと
補正する。
（２）同書第５頁第８行目の「光学的透明な」を「光学
的に透明な」と補正する。
以 上FIGS. 1(a) to (C) are plan views of essential parts showing an example of a solid-state image sensor according to the present invention, and FIGS.
FIGS. 3(a) and 3(b) are sectional views of essential parts showing other embodiments of the solid-state imaging device according to the present invention. (1)...Photodiode, (2)...Microlens, (3)...e11 silicon substrate, <4)-
... Passivation film, (5) ... Intermediate film. Agent Makoto Kuzuno - Procedural amendment (spontaneous) Commissioner of the Japan Patent Office1, Indication of case Japanese Patent Application No. 57-2012972, Name of invention Solid-state image sensor3, Person making the amendment Relationship to the case Patent applicant residence Address: 2-chome Marunouchi, Chiyoda-ku, Tokyo [12-3
Name (601) Mitsubishi Electric Co., Ltd. Representative: Katayuni Hachibe 4, Agent address: 2J-112-3, Marunouchi 2, Chiyoda-ku, Tokyo
Wing 5, Detailed explanation of the invention column 6 of the specification subject to amendment, Contents of amendment (1) [CCD (Char
geCoppled Device) J [CCD
(Charge CoupledDevice) J. (2) "Optically transparent" on page 5, line 8 of the same book is corrected to "optically transparent."that's all
Claims (5)
けてなる固体撮像素子において、前記各フォトダイオー
ド上に微小な凸形集光レンズを設けたことを特徴とする
固体撮像素子。(1) A solid-state image sensor comprising a plurality of photodiodes provided on the surface of a semiconductor substrate, characterized in that a minute convex condenser lens is provided on each of the photodiodes.
もしくは有機材料で形成したことを特徴とする特許請求
の範囲第１項記載の固体撮像素子。(2) The solid-state imaging device according to claim 1, wherein the convex condenser lens is made of an optically transparent inorganic or organic material.
ラス板を介して設けたことを特徴とする特許請求の範囲
第１項記載の固体撮像素子。(3) The solid-state imaging device according to claim 1, wherein the convex condenser lens is provided on a photodiode with a glass plate interposed therebetween.
けられたフィルタの一部に形成したことを特徴とする特
許請求の範囲第１項記載の固体撮像素子。(4) The solid-state imaging device according to claim 1, wherein the convex condenser lens is formed as a part of a filter provided on a photodiode.
接的に設けたことを特徴とする特許請求の範囲第１項ま
たは第２項記載の固体撮像素子。(5) The solid-state imaging device according to claim 1 or 2, wherein the convex condensing lens is provided directly on a photodiode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201297A JPS5990467A (en) | 1982-11-15 | 1982-11-15 | Solid-state image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201297A JPS5990467A (en) | 1982-11-15 | 1982-11-15 | Solid-state image pickup element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5990467A true JPS5990467A (en) | 1984-05-24 |
Family
ID=16438648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57201297A Pending JPS5990467A (en) | 1982-11-15 | 1982-11-15 | Solid-state image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5990467A (en) |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59134974A (en) * | 1983-01-24 | 1984-08-02 | Hitachi Ltd | Photoelectric converting device |
| JPS6060756A (en) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | Solid-state image pickup element with microlens and manufacture thereof |
| JPS6060757A (en) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | Image pickup element with microlens and manufacture thereof |
| JPS6149568A (en) * | 1984-08-17 | 1986-03-11 | Matsushita Electronics Corp | Solid-state image pickup device |
| JPS61111578A (en) * | 1984-11-05 | 1986-05-29 | Sumitomo Electric Ind Ltd | Optical reception ic |
| WO1990013146A1 (en) * | 1989-04-20 | 1990-11-01 | Eastman Kodak Company | Lens arrays for light sensitive devices |
| WO1992009105A1 (en) * | 1990-11-16 | 1992-05-29 | Kabushiki Kaisha Toshiba | Solid-state imaging device and method of manufacturing the same |
| JPH04252579A (en) * | 1991-01-28 | 1992-09-08 | Sony Corp | Solid-state image pickup device |
| JP2009218341A (en) * | 2008-03-10 | 2009-09-24 | Panasonic Corp | Solid-state imaging device, and manufacturing method of the same |
| US8208052B2 (en) | 2008-12-19 | 2012-06-26 | Panasonic Corporation | Image capture device |
| US8289422B2 (en) | 2009-01-14 | 2012-10-16 | Panasonic Corporation | Image capture device |
| US8314872B2 (en) | 2008-11-19 | 2012-11-20 | Panasonic Corporation | Imaging device |
| US8384818B2 (en) | 2008-06-18 | 2013-02-26 | Panasonic Corporation | Solid-state imaging device including arrays of optical elements and photosensitive cells |
| US8520126B2 (en) | 2010-07-12 | 2013-08-27 | Panasonic Corporation | Solid-state image capturing element, image capturing device and signal processing method |
| US8767114B2 (en) | 2010-08-24 | 2014-07-01 | Panasonic Corporation | Solid-state imaging element and imaging device |
| US8860855B2 (en) | 2011-10-31 | 2014-10-14 | Panasonic Intellectual Property Corporation Of America | Solid-state image sensor with dispersing element that disperses light according to color component, image capture device and signal processing method |
| US8902339B2 (en) | 2011-06-16 | 2014-12-02 | Panasonic Intellectual Property Corporation Of America | Solid-state imaging element and dispersing element array for improved color imaging |
| US8902338B2 (en) | 2011-06-06 | 2014-12-02 | Panasonic Intellectual Property Corporation Of America | Color separation filter array, solid-state imaging element, imaging device, and display device |
| US9071722B2 (en) | 2011-12-26 | 2015-06-30 | Panasonic Intellectual Property Corporation Of America | Solid-state imaging element, imaging device, and signal processing method |
| US9099369B2 (en) | 2012-05-02 | 2015-08-04 | Panasonic Intellectual Property Corporation Of America | Solid-state image sensor |
| US9179114B2 (en) | 2012-05-02 | 2015-11-03 | Panasonic Intellectual Property Corporation Of America | Solid-state image sensor |
| US9425229B2 (en) | 2012-09-03 | 2016-08-23 | Panasonic Intellectual Property Corporation Of America | Solid-state imaging element, imaging device, and signal processing method including a dispersing element array and microlens array |
-
1982
- 1982-11-15 JP JP57201297A patent/JPS5990467A/en active Pending
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59134974A (en) * | 1983-01-24 | 1984-08-02 | Hitachi Ltd | Photoelectric converting device |
| JPS6060756A (en) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | Solid-state image pickup element with microlens and manufacture thereof |
| JPS6060757A (en) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | Image pickup element with microlens and manufacture thereof |
| JPH0570944B2 (en) * | 1983-09-14 | 1993-10-06 | Hitachi Ltd | |
| JPS6149568A (en) * | 1984-08-17 | 1986-03-11 | Matsushita Electronics Corp | Solid-state image pickup device |
| JPS61111578A (en) * | 1984-11-05 | 1986-05-29 | Sumitomo Electric Ind Ltd | Optical reception ic |
| WO1990013146A1 (en) * | 1989-04-20 | 1990-11-01 | Eastman Kodak Company | Lens arrays for light sensitive devices |
| WO1992009105A1 (en) * | 1990-11-16 | 1992-05-29 | Kabushiki Kaisha Toshiba | Solid-state imaging device and method of manufacturing the same |
| JPH04252579A (en) * | 1991-01-28 | 1992-09-08 | Sony Corp | Solid-state image pickup device |
| JP2009218341A (en) * | 2008-03-10 | 2009-09-24 | Panasonic Corp | Solid-state imaging device, and manufacturing method of the same |
| US8384818B2 (en) | 2008-06-18 | 2013-02-26 | Panasonic Corporation | Solid-state imaging device including arrays of optical elements and photosensitive cells |
| US8314872B2 (en) | 2008-11-19 | 2012-11-20 | Panasonic Corporation | Imaging device |
| US8208052B2 (en) | 2008-12-19 | 2012-06-26 | Panasonic Corporation | Image capture device |
| US8289422B2 (en) | 2009-01-14 | 2012-10-16 | Panasonic Corporation | Image capture device |
| US8520126B2 (en) | 2010-07-12 | 2013-08-27 | Panasonic Corporation | Solid-state image capturing element, image capturing device and signal processing method |
| US8767114B2 (en) | 2010-08-24 | 2014-07-01 | Panasonic Corporation | Solid-state imaging element and imaging device |
| US8902338B2 (en) | 2011-06-06 | 2014-12-02 | Panasonic Intellectual Property Corporation Of America | Color separation filter array, solid-state imaging element, imaging device, and display device |
| US8902339B2 (en) | 2011-06-16 | 2014-12-02 | Panasonic Intellectual Property Corporation Of America | Solid-state imaging element and dispersing element array for improved color imaging |
| US8860855B2 (en) | 2011-10-31 | 2014-10-14 | Panasonic Intellectual Property Corporation Of America | Solid-state image sensor with dispersing element that disperses light according to color component, image capture device and signal processing method |
| US9071722B2 (en) | 2011-12-26 | 2015-06-30 | Panasonic Intellectual Property Corporation Of America | Solid-state imaging element, imaging device, and signal processing method |
| US9099369B2 (en) | 2012-05-02 | 2015-08-04 | Panasonic Intellectual Property Corporation Of America | Solid-state image sensor |
| US9179114B2 (en) | 2012-05-02 | 2015-11-03 | Panasonic Intellectual Property Corporation Of America | Solid-state image sensor |
| US9425229B2 (en) | 2012-09-03 | 2016-08-23 | Panasonic Intellectual Property Corporation Of America | Solid-state imaging element, imaging device, and signal processing method including a dispersing element array and microlens array |
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