JPH10229180A - Solid-state image sensor - Google Patents
Solid-state image sensorInfo
- Publication number
- JPH10229180A JPH10229180A JP9029931A JP2993197A JPH10229180A JP H10229180 A JPH10229180 A JP H10229180A JP 9029931 A JP9029931 A JP 9029931A JP 2993197 A JP2993197 A JP 2993197A JP H10229180 A JPH10229180 A JP H10229180A
- Authority
- JP
- Japan
- Prior art keywords
- microlens
- light
- film
- incident
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000003384 imaging method Methods 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 abstract description 20
- 230000035945 sensitivity Effects 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 11
- 230000003287 optical effect Effects 0.000 abstract description 5
- 230000003746 surface roughness Effects 0.000 abstract 1
- 210000001747 pupil Anatomy 0.000 description 17
- 238000002161 passivation Methods 0.000 description 12
- 238000000059 patterning Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、固体撮像素子に関
し、詳しくは受光部開口の上方にマイクロレンズを設け
た固体撮像素子に関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a solid-state imaging device, and more particularly to a solid-state imaging device having a microlens provided above a light-receiving opening.
【０００２】[0002]
【従来の技術】電荷結合デバイス（以下、ＣＣＤ、ＣＣ
ＤはCharge coupled device の略）を用いた固体撮像素
子では、カムコーダーの小型化や内視鏡への応用などに
ともなって、射出瞳距離の短い光学系にも対応可能な素
子が要求されてきている。このような要求に対応するた
め、従来は図３に示すような構造のものが開示されてい
た。2. Description of the Related Art Charge-coupled devices (hereinafter referred to as CCD, CC)
(D is an abbreviation for Charge coupled device) In the solid-state imaging device using a camcorder, as the size of the camcorder is reduced and the application to an endoscope is performed, an element which can correspond to an optical system having a short exit pupil distance has been required. I have. In order to respond to such a demand, a device having a structure as shown in FIG. 3 has been disclosed.
【０００３】すなわち、図３に示すように、チップの中
心部１０１ｃではマイクロレンズ１２１のレンズ中心軸
Ｘと受光部開口１１１の中心Ｃとを一致させ、一方、チ
ップの周辺部１０１ａに向かうにしたがってマイクロレ
ンズ１２１の中心軸Ｘと受光部開口１１１の中心Ｃとの
距離ｔを一定の割合でずらして、各マイクロレンズ１２
１が配置されているものである。That is, as shown in FIG. 3, the center axis X of the microlens 121 and the center C of the light-receiving opening 111 are aligned at the center portion 101c of the chip, while moving toward the peripheral portion 101a of the chip. The distance t between the center axis X of the microlens 121 and the center C of the light-receiving opening 111 is shifted at a fixed rate,
1 is arranged.
【０００４】それによってチップの周辺部１０１ａの画
素でも入射光Ｌを受光部開口１１１の中心部に入射させ
ることが可能になる。このように受光部開口１１１の中
心Ｃに対してマイクロレンズ１２１の中心軸Ｘをずらし
て配置することを「マイクロレンズの瞳補正をかける」
と呼んでいる。このマイクロレンズ１２１の中心軸Ｘと
受光部開口１１１の中心Ｃとの距離ｔは、チップの中心
部１０１ｃから周辺部１０１ａに向かうにしたがって大
きくなり、チップ１０１の最外郭の画素で最大となる。
その値を瞳補正量と呼ぶ。Accordingly, it becomes possible to make the incident light L incident on the central portion of the light receiving portion opening 111 even at the pixels in the peripheral portion 101a of the chip. Disposing the center axis X of the microlens 121 with respect to the center C of the light-receiving unit opening 111 in this way is called “correct the pupil of the microlens”.
I'm calling The distance t between the central axis X of the microlens 121 and the center C of the light-receiving unit opening 111 increases from the central part 101c of the chip toward the peripheral part 101a, and becomes maximum at the outermost pixels of the chip 101.
The value is called a pupil correction amount.
【０００５】比較のため、マイクロレンズの瞳補正をか
けない構造を図４によって説明する。図４に示すよう
に、チップの中心部１０１ｃの画素に瞳補正をかけたと
きと同様に入射光Ｌは受光部開口１１１の中心部に入射
する。これに対して、チップの周辺部１０１ａの画素
は、入射光Ｌの一部が受光部開口１１１に入射されず受
光部開口１１１の端部の遮光膜１１２やパッシベーショ
ン膜１１３上で反射するなどする。このような現象が生
じることによりチップの周辺部１０１ａにおいて、特に
感度の低下、シェーディングなどの感度ムラが発生す
る。For comparison, a structure in which pupil correction of a micro lens is not performed will be described with reference to FIG. As shown in FIG. 4, the incident light L enters the center of the light-receiving opening 111 in the same manner as when the pupil correction is applied to the pixel at the center 101 c of the chip. On the other hand, in the pixel of the peripheral portion 101a of the chip, a part of the incident light L is not incident on the light receiving portion opening 111 and is reflected on the light shielding film 112 or the passivation film 113 at the end of the light receiving portion opening 111. . Due to the occurrence of such a phenomenon, in the peripheral portion 101a of the chip, sensitivity unevenness such as a reduction in sensitivity and shading occurs.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、さらに
瞳補正の短い光学系に対応しようとすると、チップの周
辺部では光がより斜め入射するので瞳補正量を大きく取
らなければならない。このような状況では図５に示すよ
うに、チップの中心部１０１ｃでは、入射光Ｌが受光部
開口１１１の中心部に入射される。一方、チップの周辺
部１０１ａでは、マイクロレンズ１２１の中心軸Ｘと受
光部開口１１１の中心Ｃとの距離ｔをより大きくとって
も、入射光Ｌは、受光部開口１１１の周辺に設けられた
遮光膜１１２やパッシベーション膜１１３などによっ
て、その一部が遮られる。そのため、感度の低下、シェ
ーディングなどの感度ムラが発生するという問題が起き
る。However, if an attempt is made to cope with an optical system with a shorter pupil correction, a larger amount of pupil correction must be taken since light is more obliquely incident on the periphery of the chip. In such a situation, as shown in FIG. 5, the incident light L is incident on the central portion of the light receiving portion opening 111 at the central portion 101c of the chip. On the other hand, in the peripheral portion 101a of the chip, even if the distance t between the central axis X of the microlens 121 and the center C of the light receiving portion opening 111 is set to be larger, the incident light L is transmitted to the light shielding film provided around the light receiving portion opening 111. A part thereof is blocked by the passivation film 112 and the like. For this reason, there arises a problem that sensitivity is reduced and sensitivity unevenness such as shading occurs.
【０００７】[0007]
【課題を解決するための手段】本発明は、上記課題を解
決するためになされた固体撮像素子である。すなわち、
受光部開口より光の入射側にマイクロレンズを備えた固
体撮像素子であって、上記マイクロレンズは、受光部開
口より光の入射側に設けた第１マイクロレンズと、その
受光部開口および上記第１マイクロレンズより光の入射
側に設けた第２マイクロレンズとからなる。しかも第１
マイクロレンズおよび第２マイクロレンズは、固体撮像
素子の周辺部に向かうにしたがって、第２マイクロレン
ズに入射した光が第１マイクロレンズを通して受光部開
口内に入射するように、第１マイクロレンズの中心軸お
よび第２マイクロレンズの中心軸を受光部開口の中心よ
りそれぞれにずらして設けたものである。SUMMARY OF THE INVENTION The present invention is a solid-state image pickup device for solving the above-mentioned problems. That is,
What is claimed is: 1. A solid-state imaging device comprising: a microlens on a light incident side of a light-receiving unit opening, wherein the microlens includes a first microlens provided on a light-incident side of the light-receiving unit opening; A second microlens provided on the light incident side of one microlens. And the first
The micro-lens and the second micro-lens are arranged at the center of the first micro-lens such that light incident on the second micro-lens is incident on the light receiving unit opening through the first micro-lens as going toward the periphery of the solid-state imaging device. The axis and the central axis of the second microlens are provided to be shifted from the center of the aperture of the light receiving portion.
【０００８】上記固体撮像素子では、受光部開口よりも
光の入射側に設けた第１マイクロレンズとさらにそれよ
りも光の入射側に設けた第２マイクロレンズとの２枚で
一つの受光部開口に対するマイクロレンズが構成されて
いて、かつ第１，第２マイクロレンズのそれぞれは、第
２マイクロレンズに入射した光が第１マイクロレンズを
通して受光部開口内に入射するように、固体撮像素子の
周辺部に向かうにしたがい第１マイクロレンズの中心軸
および第２マイクロレンズの中心軸を受光部開口の中心
よりそれぞれにずらして設けたことから、チップ周辺部
に入射される斜め入射光は受光部開口の周辺の遮光膜や
パッシベーション膜に入射されることなく受光部開口の
中心部に入射される。そのため、感度の低下、シェーデ
ィングなどの感度ムラの発生が抑制される。In the above-mentioned solid-state image pickup device, the first microlens provided on the light incident side of the light receiving opening and the second microlens provided on the light incident side further therefrom constitute one light receiving unit. A microlens for the aperture is formed, and each of the first and second microlenses is provided with a solid-state imaging device such that light incident on the second microlens enters the light receiving unit aperture through the first microlens. As the central axis of the first microlens and the central axis of the second microlens are shifted from the center of the light receiving portion opening toward the peripheral portion, the obliquely incident light incident on the chip peripheral portion is not incident on the light receiving portion. The light does not enter the light-shielding film or the passivation film around the opening but enters the center of the light-receiving unit opening. Therefore, the occurrence of sensitivity unevenness such as a decrease in sensitivity and shading is suppressed.
【０００９】[0009]
【発明の実施の形態】本発明の実施形態の一例を、図１
の概略構成断面図によって説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention is shown in FIG.
Will be described with reference to the schematic configuration sectional view of FIG.
【００１０】図１に示すように、半導体基板１１に設け
た転送部１２を覆う状態に絶縁膜１３、遮光膜１４、パ
ッシベーション膜１５等が形成されている。上記半導体
基板１１に形成された受光領域１６の上方（入射光Ｌの
入射側）の遮光膜１４には受光部開口１７が形成されて
いる。さらに上記パッシベーション膜１５上には、平坦
化膜１８およびカラーフィルタ１９を介して第１レンズ
形成膜２１が形成され、上記受光部開口１７の上方（入
射光Ｌの入射側）における第１レンズ形成膜２１の上部
には、この第１レンズ形成膜２１を加工してなる第１マ
イクロレンズ２２が形成されている。さらにその上部に
第２レンズ形成膜２３が形成され、第１マイクロレンズ
２２の上方（入射光Ｌの入射側）における第２レンズ形
成膜２３の上部には、この第２レンズ形成膜２３を加工
してなる第２マイクロレンズ２４が形成されている。As shown in FIG. 1, an insulating film 13, a light shielding film 14, a passivation film 15, and the like are formed so as to cover a transfer section 12 provided on a semiconductor substrate 11. A light receiving portion opening 17 is formed in the light shielding film 14 above the light receiving region 16 formed on the semiconductor substrate 11 (on the incident side of the incident light L). Further, a first lens forming film 21 is formed on the passivation film 15 via a flattening film 18 and a color filter 19, and the first lens forming film 21 is formed above the light receiving portion opening 17 (on the incident side of the incident light L). Above the film 21, a first micro lens 22 formed by processing the first lens forming film 21 is formed. Further, a second lens forming film 23 is formed thereon, and the second lens forming film 23 is processed above the first micro lens 22 (on the incident side of the incident light L). A second micro lens 24 is formed.
【００１１】しかも第１マイクロレンズ２２および第２
マイクロレンズ２４は、固体撮像素子１のチップの周辺
部１ａに向かうにしたがって、第２マイクロレンズ２４
に入射する光（以下、入射光という）Ｌが第１マイクロ
レンズ２２を通して受光部開口１７に入射するように、
第１マイクロレンズ２２の中心軸Ｘ１および第２マイク
ロレンズ２４の中心軸Ｘ２を受光部開口１７の中心Ｃよ
りそれぞれにずらして設けられている。In addition, the first micro lens 22 and the second
The microlens 24 moves toward the peripheral portion 1a of the chip of the solid-state imaging device 1, and
(Hereinafter, referred to as incident light) L is incident on the light-receiving opening 17 through the first microlens 22.
The central axis X1 of the first microlens 22 and the central axis X2 of the second microlens 24 are provided so as to be shifted from the center C of the light receiving opening 17 respectively.
【００１２】一方、固体撮像素子１のチップの中心部１
ｃでは、第２マイクロレンズ２４への入射光Ｌが第１マ
イクロレンズ２２を通して受光部開口１７に入射するよ
うに、第１マイクロレンズ２２の中心軸Ｘ１および第２
マイクロレンズ２４の中心軸Ｘ２は受光部開口１７の中
心Ｃに一致する状態に設けられている。On the other hand, the central portion 1 of the chip of the solid-state
3C, the central axis X1 of the first microlens 22 and the second axis L1 of the second microlens 22 are set such that the light L incident on the second microlens 24 is incident on the light receiving opening 17 through the first microlens 22.
The center axis X2 of the microlens 24 is provided so as to coincide with the center C of the light-receiving opening 17.
【００１３】このようにマイクロレンズを２層に形成す
るに際し、１層目の第１マイクロレンズ２２と２層目の
第２マイクロレンズ２４のそれぞれに対して瞳補正をか
ける。このとき、入射光Ｌが受光部開口１７端の遮光膜
１４やパッシベーション膜１５に当たって反射すること
がないように、第１マイクロレンズ２２の瞳補正量ｔ
１，第２マイクロレンズ２４の瞳補正量ｔ２、および第
１マイクロレンズ２２の高さｈ１，第２マイクロレンズ
２４の高さｈ２、および各層の厚さＬ１，Ｌ２は適宜設
定される。なお、固体撮像素子１のチップの中心部１ｃ
では、ｔ１＝ｔ２＝０であり、チップの周辺部１ａに向
かうにしたがってｔ１＜ｔ２となり、ｔ２−ｔ１は大き
くなる。In forming the microlenses in two layers as described above, pupil correction is applied to each of the first microlens 22 of the first layer and the second microlens 24 of the second layer. At this time, the pupil correction amount t of the first micro lens 22 is adjusted so that the incident light L does not hit the light-shielding film 14 or the passivation film 15 at the end of the light-receiving unit opening 17 and is reflected.
1, the pupil correction amount t2 of the second microlens 24, the height h1 of the first microlens 22, the height h2 of the second microlens 24, and the thicknesses L1 and L2 of each layer are appropriately set. In addition, the central portion 1c of the chip of the solid-state imaging device 1
In this case, t1 = t2 = 0, and t1 <t2, and t2−t1 increases toward the peripheral portion 1a of the chip.
【００１４】さらにチップの周辺部１ａでは、第１，第
２マイクロレンズ２２，２４によって入射光Ｌを屈折さ
せるために、少なくとも（１）式に表される関係を満足
させる必要がある。Further, in the peripheral portion 1a of the chip, in order to refract the incident light L by the first and second micro lenses 22 and 24, it is necessary to satisfy at least the relationship represented by the expression (1).
【００１５】[0015]
【数１】 (Equation 1)
【００１６】上記（１）式を満足するには、例えば第１
レンズ形成膜２１は透明性のネガレジスト（Ｎ１≒１．
６）で形成し、さらに第２レンズ形成膜２３はシクロポ
リマライズドフロリネーテッドポリマー系樹脂〔例えば
サイトップ（商品名）〕（Ｎ２≒１．３）で形成する。In order to satisfy the above expression (1), for example, the first
The lens forming film 21 is made of a transparent negative resist (N1 ≒ 1.
6), and the second lens-forming film 23 is formed of a cyclopolymerized fluorinated polymer resin [for example, Cytop (trade name)] (N2Ｎ1.3).
【００１７】上記固体撮像素子１では第１マイクロレン
ズ２２と第２マイクロレンズ２４との２枚で一つの受光
部開口１７に対するマイクロレンズが構成されていて、
かつ第１，第２マイクロレンズ２２，２４のそれぞれ
は、射出瞳距離が短い入射光Ｌであっても、第２マイク
ロレンズ２４から入射して第１マイクロレンズ２２を通
して受光部開口１７内に入射するように、固体撮像素子
１の周辺部に向かうにしたがい第１マイクロレンズ２２
の中心軸Ｘ１および第２マイクロレンズ２４の中心軸Ｘ
２を受光部開口１７の中心Ｃよりそれぞれにずらして設
けたことから、チップ周辺部の受光部開口１７に入射さ
れる斜め入射光Ｌはその受光部開口１７の周辺の遮光膜
１４やパッシベーション膜１５に入射されることなく所
定の受光部開口１７の中心部に入射される。そのため、
固体撮像素子１の周辺部の感度が落ちる現象（シェーデ
ィング）や画素毎に感度が若干変わることにより画面が
ざらつく現象（感度ムラ）が抑えられる。In the solid-state image pickup device 1, the first micro lens 22 and the second micro lens 24 constitute a micro lens for one light receiving portion opening 17,
In addition, each of the first and second micro lenses 22 and 24 enters from the second micro lens 24 and enters the light receiving unit opening 17 through the first micro lens 22 even if the incident light L has a short exit pupil distance. So that the first microlenses 22 move toward the periphery of the solid-state imaging device 1.
And the central axis X of the second microlens 24
2 are provided so as to be shifted from the center C of the light receiving portion opening 17, the oblique incident light L entering the light receiving portion opening 17 in the peripheral portion of the chip receives the light shielding film 14 and the passivation film around the light receiving portion opening 17. The light is incident on the central portion of a predetermined light receiving portion opening 17 without being incident on the light receiving portion 15. for that reason,
The phenomenon (sensitivity shading) in which the sensitivity of the peripheral portion of the solid-state imaging device 1 decreases and the phenomenon in which the screen is rough due to the sensitivity slightly changing for each pixel (sensitivity unevenness) are suppressed.
【００１８】次に上記固体撮像素子１の製造方法を簡単
に説明する。まず、通常のプロセスによって、半導体基
板に受光部、転送部等を形成した後、半導体基板上に絶
縁膜、遮光膜等を形成する。次いで受光部上の遮光膜に
受光部開口を設けた後、遮光膜、受光開口等を覆う状態
にパッシベーション膜を形成する。その後、平坦化膜、
カラーフィルタを形成した後、第１レンズ形成膜を形成
する。Next, a brief description will be given of a method of manufacturing the solid-state imaging device 1. First, after a light receiving portion, a transfer portion, and the like are formed on a semiconductor substrate by a normal process, an insulating film, a light shielding film, and the like are formed on the semiconductor substrate. Next, after a light receiving portion opening is provided in the light shielding film on the light receiving portion, a passivation film is formed so as to cover the light shielding film, the light receiving opening, and the like. After that, a flattening film,
After forming the color filters, a first lens forming film is formed.
【００１９】次に上記第１レンズ形成膜上にレジスト膜
を塗布により形成してから、このレジスト膜を第１マイ
クロレンズと同様の形状にパターニングする。このパタ
ーニングは、リソグラフィー技術によって上記レジスト
膜で第１レジストパターンを形成した後、その第１レジ
ストパターンをリフロー処理することによって行う。そ
してレンズ状にパターニングしたレジスト膜とともに上
記第１レンズ形成膜をエッチバックして、第１マイクロ
レンズを形成する。上記第１レジストパターンを形成す
る際には、入射光が形成しようとする第１マイクロレン
ズを通して受光部開口内に入射するように、受光部開口
の中心とこれから形成しようとする第１マイクロレンズ
の中心軸とを所定距離にして、この第１レジストパター
ンの位置を設定する。Next, after a resist film is formed on the first lens forming film by coating, the resist film is patterned into a shape similar to that of the first microlens. This patterning is performed by forming a first resist pattern on the resist film by a lithography technique and then performing a reflow process on the first resist pattern. Then, the first lens forming film is etched back together with the resist film patterned into a lens shape to form a first microlens. When forming the first resist pattern, the center of the light-receiving opening and the first micro-lens to be formed from the center are formed so that the incident light enters the light-receiving opening through the first micro-lens to be formed. The position of the first resist pattern is set with a predetermined distance from the center axis.
【００２０】次いで、上記第１マイクロレンズを覆う状
態に第２レンズ形成膜を形成する。次いでこの第２レン
ズ形成膜上にレジスト膜を塗布により形成してから、こ
のレジスト膜を第２マイクロレンズと同様の形状にパタ
ーニングする。このパターニングは、前記パターニング
と同様に、リソグラフィー技術によってレジスト膜で第
２レジストパターンを形成した後、その第２レジストパ
ターンをリフロー処理することによって行う。そしてパ
ターニングしたレンズ状のレジスト膜とともに上記第２
レンズ形成膜をエッチバックして、第２マイクロレンズ
を形成する。上記第２レジストパターンを形成する際に
は、入射光が形成しようとする第２マイクロレンズから
第１マイクロレンズを通して受光部開口内に入射するよ
うに、受光部開口の中心とこれから形成しようとする第
２マイクロレンズの中心軸とを所定距離にして、この第
２レジストパターンの位置を設定する。Next, a second lens forming film is formed so as to cover the first micro lens. Next, after a resist film is formed on the second lens forming film by coating, the resist film is patterned into a shape similar to that of the second microlens. This patterning is performed by forming a second resist pattern using a resist film by a lithography technique and performing a reflow process on the second resist pattern in the same manner as the above-described patterning. Then, together with the patterned lens-shaped resist film, the second
The second micro lens is formed by etching back the lens forming film. When the second resist pattern is formed, the center of the light-receiving opening and the light-receiving opening are to be formed so that the incident light enters the light-receiving opening through the first microlens from the second microlens to be formed. The position of the second resist pattern is set with a predetermined distance from the center axis of the second microlens.
【００２１】次に第１マイクロレンズと第１マイクロレ
ンズとの間にカラーフィルタを形成した別の実施形態の
一例を、図２によって説明する。図２では、前記図１に
よって説明したのと同様の構成部品には同一符号を付
す。Next, another embodiment in which a color filter is formed between the first micro lens and the first micro lens will be described with reference to FIG. 2, the same components as those described with reference to FIG. 1 are denoted by the same reference numerals.
【００２２】図２に示すように、半導体基板１１上に形
成した転送部１２を覆う状態に絶縁膜１３、遮光膜１
４、パッシベーション膜１５が形成され、このパッシベ
ーション膜１５上には第１レンズ形成膜２１が形成され
ている。この第１レンズ形成膜２１は、プラズマ窒化シ
リコン膜（Ｎ１≒２．０）またはプラズマ酸窒化シリコ
ン（ＳｉＯＮ）膜（Ｎ１≒１．７〜２．０）からなる。
上記遮光膜１４には受光部開口１７が形成され、この受
光部開口１７の上方（入射光Ｌの入射側）における第１
レンズ形成膜２１の上部には、この第１レンズ形成膜２
１を加工してなる第１マイクロレンズ２２が形成されて
いる。この第１マイクロレンズ２２を覆う状態に平坦化
膜１８が形成され、さらにその上面にカラーフィルタ１
９が形成されている。このカラーフィルタ１９上には第
２レンズ形成膜２３が形成されている。この第２レンズ
形成膜２３は、例えば透明性のネガレジスト（Ｎ１≒
１．６）またはシクロポリマライズドフロリネーテッド
ポリマー系樹脂〔例えばサイトップ（商品名）〕（Ｎ２
≒１．３）からなる。さらに第１マイクロレンズ２２の
上方（入射光Ｌの入射側）における第２レンズ形成膜２
３の上部には、この第２レンズ形成膜２３を加工してな
る第２マイクロレンズ２４が形成されている。As shown in FIG. 2, the insulating film 13 and the light shielding film 1 are covered with the transfer portion 12 formed on the semiconductor substrate 11 so as to cover the same.
4. A passivation film 15 is formed, and a first lens forming film 21 is formed on the passivation film 15. The first lens forming film 21 is made of a plasma silicon nitride film (N1 ≒ 2.0) or a plasma silicon oxynitride (SiON) film (N1 ≒ 1.7 to 2.0).
A light receiving portion opening 17 is formed in the light shielding film 14, and a first light receiving portion opening 17 above the light receiving portion opening 17 (on the incident side of the incident light L).
The first lens forming film 2 is formed on the lens forming film 21.
A first microlens 22 formed by processing No. 1 is formed. The flattening film 18 is formed so as to cover the first microlenses 22, and the color filter 1 is further formed on the upper surface thereof.
9 are formed. On this color filter 19, a second lens forming film 23 is formed. The second lens forming film 23 is made of, for example, a transparent negative resist (N1 ≒).
1.6) or cyclopolymerized fluorinated polymer resin [eg Cytop (trade name)] (N2
$ 1.3). Further, the second lens forming film 2 above the first micro lens 22 (on the incident side of the incident light L)
A second micro lens 24 formed by processing the second lens forming film 23 is formed on the upper part of the third micro lens 24.
【００２３】しかも第１マイクロレンズ２２および第２
マイクロレンズ２４は、固体撮像素子２のチップの周辺
部２ａに向かうにしたがって、第２マイクロレンズ２４
に対する入射光Ｌが第１マイクロレンズ２２を通して受
光部開口１７に入射するように、第１マイクロレンズ２
２の中心軸Ｘ１および第２マイクロレンズ２４の中心軸
Ｘ２を受光部開口１７の中心軸Ｘｃよりずらして設けら
れている。例えば、第１マイクロレンズ２２の瞳補正量
ｔ１および第２マイクロレンズ２４の瞳補正量ｔ２が適
宜設定されている。なお、固体撮像素子２のチップの中
心部２ｃでは、ｔ１＝ｔ２＝０であり、チップの周辺部
２ａに向かうにしたがってｔ１＜ｔ２となり、ｔ２−ｔ
１は大きくなる。Moreover, the first micro lens 22 and the second
The microlens 24 moves toward the peripheral portion 2 a of the chip of the solid-state imaging device 2,
The first microlens 2 is arranged such that the incident light L to the light enters the light receiving opening 17 through the first microlens 22.
The center axis X1 of the second microlens 24 and the center axis X2 of the second microlens 24 are shifted from the center axis Xc of the light-receiving opening 17. For example, the pupil correction amount t1 of the first micro lens 22 and the pupil correction amount t2 of the second micro lens 24 are appropriately set. Note that t1 = t2 = 0 at the center 2c of the chip of the solid-state imaging device 2, and t1 <t2 toward the periphery 2a of the chip, and t2−t.
1 increases.
【００２４】一方、固体撮像素子２のチップの中心部２
ｃでは、第２マイクロレンズ２４に対する入射光Ｌが第
１マイクロレンズ２２を通して受光部開口１７に入射す
るように、第１マイクロレンズ２２の中心軸Ｘ１および
第２マイクロレンズ２４の中心軸Ｘ２は受光部開口１７
の中心軸Ｘｃに一致する状態に設けられている。On the other hand, the central portion 2 of the chip of the solid-state
In (c), the central axis X1 of the first microlens 22 and the central axis X2 of the second microlens 24 are received such that the light L incident on the second microlens 24 enters the light receiving opening 17 through the first microlens 22. Opening 17
Are provided in a state coinciding with the central axis Xc.
【００２５】上記図２によって説明した固体撮像素子２
も前記図１によって説明した固体撮像素子１と同様に、
射出瞳距離が短い入射光Ｌであっても、チップ周辺部の
受光部開口１７に入射される斜め入射光は、第２マイク
ロレンズ２４および第１マイクロレンズ２２によって受
光部開口１７の周辺の遮光膜１４やパッシベーション膜
１５に入射されることなく所定の受光部開口１７内に入
射される。そのため、固体撮像素子２の周辺部の感度が
落ちる現象（シェーディング）や画素毎に感度が若干変
わることにより画面がざらつく現象（感度ムラ）が抑制
される。The solid-state imaging device 2 described with reference to FIG.
Similarly to the solid-state imaging device 1 described with reference to FIG.
Even if the incident light L has a short exit pupil distance, oblique incident light incident on the light receiving portion opening 17 around the chip is blocked by the second micro lens 24 and the first micro lens 22 around the light receiving portion opening 17. The light does not enter the film 14 or the passivation film 15 and enters the predetermined light receiving portion opening 17. For this reason, a phenomenon in which the sensitivity of the peripheral portion of the solid-state imaging device 2 decreases (shading) and a phenomenon in which the screen is rough due to a slight change in sensitivity for each pixel (sensitivity unevenness) are suppressed.
【００２６】次に上記固体撮像素子２の製造方法を簡単
に説明する。通常のプロセスによって、半導体基板に受
光部、転送部等を形成した後、半導体基板上に絶縁膜、
遮光膜等を形成する。次いで受光部上の遮光膜に受光部
開口を設けた後、遮光膜、受光開口等を覆う状態にパッ
シベーション膜を形成する。その後、第１レンズ形成膜
を形成する。Next, a brief description will be given of a method of manufacturing the solid-state imaging device 2. After forming a light receiving part, a transfer part, etc. on a semiconductor substrate by a normal process, an insulating film,
A light shielding film or the like is formed. Next, after a light receiving portion opening is provided in the light shielding film on the light receiving portion, a passivation film is formed so as to cover the light shielding film, the light receiving opening, and the like. After that, a first lens forming film is formed.
【００２７】次いで上記第１レンズ形成膜上にレジスト
膜を塗布により形成してから、このレジスト膜を第１マ
イクロレンズと同様の形状にパターニングする。このパ
ターニングは、リソグラフィー技術によってレジスト膜
で第１レジストパターンを形成した後、その第１レジス
トパターンをリフロー処理することによって行う。そし
てパターニングしたレンズ状のレジスト膜とともに上記
第１レンズ形成膜をエッチバックして、第１マイクロレ
ンズを形成する。Next, after a resist film is formed on the first lens forming film by coating, the resist film is patterned into the same shape as the first microlens. This patterning is performed by forming a first resist pattern with a resist film by a lithography technique and then performing a reflow process on the first resist pattern. Then, the first lens forming film is etched back together with the patterned lens-shaped resist film to form a first microlens.
【００２８】上記第１レジストパターンを形成する際に
は、入射光が形成しようとする第１マイクロレンズを通
して受光部開口内に入射するように、受光部開口の中心
とこれから形成しようとする第１マイクロレンズの中心
軸とを所定距離にして、この第１レジストパターンの位
置を設定する。When the first resist pattern is formed, the center of the light-receiving portion opening and the first light-receiving portion to be formed therefrom are formed so that incident light enters the light-receiving portion opening through the first microlens to be formed. The position of the first resist pattern is set with a predetermined distance from the center axis of the microlens.
【００２９】さらに、上記第１マイクロレンズを覆う状
態に平坦化膜、カラーフィルタを形成した後、第２レン
ズ形成膜を形成する。次いでこの第２レンズ形成膜上に
レジスト膜を塗布により形成してから、このレジスト膜
を第２マイクロレンズと同様の形状にパターニングす
る。このパターニングは、前記パターニングと同様に、
リソグラフィー技術によってレジスト膜で第２レジスト
パターンを形成した後、その第２レジストパターンをリ
フロー処理することによって行う。そしてパターニング
したレンズ状のレジスト膜とともに上記第２レンズ形成
膜をエッチバックして、第２マイクロレンズを形成す
る。Further, after a flattening film and a color filter are formed so as to cover the first micro lens, a second lens forming film is formed. Next, after a resist film is formed on the second lens forming film by coating, the resist film is patterned into a shape similar to that of the second microlens. This patterning, like the patterning,
After forming a second resist pattern with a resist film by a lithography technique, the second resist pattern is subjected to a reflow process. Then, the second lens forming film is etched back together with the patterned lens-shaped resist film to form a second microlens.
【００３０】上記第２レジストパターンを形成する際に
は、入射光が形成しようとする第２マイクロレンズから
第１マイクロレンズを通して受光部開口内に入射するよ
うに、受光部開口の中心とこれから形成しようとする第
２マイクロレンズの中心軸とを所定距離にして、この第
２レジストパターンの位置を設定する。When the second resist pattern is formed, the center of the light-receiving portion opening and the light-receiving portion are formed so that incident light enters the light-receiving portion opening from the second microlens to be formed through the first microlens. The position of the second resist pattern is set with a predetermined distance from the center axis of the second microlens to be obtained.
【００３１】[0031]
【発明の効果】以上、説明したように本発明によれば、
受光部開口の光の入射側に第１，第２マイクロレンズを
設け、かつ第２マイクロレンズへの入射光が第１マイク
ロレンズを通して受光部開口に入射するように、固体撮
像素子の周辺部に向かうにしたがって第１マイクロレン
ズの中心軸および第２マイクロレンズの中心軸を受光部
開口の中心よりそれぞれにずらして設けたので、斜め入
射光を受光部開口の中心部に入射することが可能にな
る。そのため、射出瞳距離が短い光学系を使うカメラで
あっても、周辺部の感度が落ちるシェーディングや画素
毎に感度が若干変わることにより画面がざらつく感度ム
ラを抑制することが可能になり、画質の向上が図れる。
また感度の低下が抑制されるので、受光部を大きくして
感度を向上させる必要もなくなる。そのため、光学系を
小さくできるのでカメラの小型化が図れる。As described above, according to the present invention,
First and second microlenses are provided on the light incident side of the light receiving unit opening, and the light incident on the second microlens is incident on the light receiving unit opening through the first microlens at a peripheral portion of the solid-state imaging device. Since the central axis of the first microlens and the central axis of the second microlens are provided to be shifted from the center of the light receiving unit opening toward the center, it is possible to make oblique incident light incident on the central part of the light receiving unit opening. Become. Therefore, even with a camera that uses an optical system with a short exit pupil distance, it is possible to suppress shading in which the sensitivity in the peripheral area is reduced and sensitivity unevenness in which the screen is rough due to a slight change in sensitivity for each pixel. Improvement can be achieved.
In addition, since a decrease in sensitivity is suppressed, it is not necessary to increase the light receiving unit to improve the sensitivity. Therefore, the size of the optical system can be reduced, and the size of the camera can be reduced.
【図１】本発明に係わる実施形態の概略構成断面図であ
る。FIG. 1 is a schematic configuration sectional view of an embodiment according to the present invention.
【図２】別の実施形態の概略構成断面図である。FIG. 2 is a schematic sectional view of another embodiment.
【図３】マイクロレンズに瞳補正をかけた従来構造の概
略構成断面図である。FIG. 3 is a schematic configuration sectional view of a conventional structure in which a pupil correction is applied to a microlens.
【図４】マイクロレンズに瞳補正をかけない構造の概略
構成断面図である。FIG. 4 is a schematic cross-sectional view of a structure in which pupil correction is not performed on a micro lens.
【図５】課題の説明図である。FIG. 5 is an explanatory diagram of a problem.
１ 固体撮像素子 １ａ チップの周辺部 １７
受光部開口 ２２ 第１マイクロレンズ ２４ 第２マイクロレン
ズ Ｃ 受光部開口の中心 Ｌ 入射光 Ｘ１ 第１マ
イクロレンズの中心軸 Ｘ２ 第２マイクロレンズの中心軸1 solid-state imaging device 1a peripheral portion of chip
Light receiving part opening 22 First micro lens 24 Second micro lens C Center of light receiving part opening L Incident light X1 Central axis of first micro lens X2 Central axis of second micro lens
Claims (1)
えた固体撮像素子において、 前記マイクロレンズは、 前記受光部開口より光の入射側に設けた第１マイクロレ
ンズと、 前記受光部開口および前記第１マイクロレンズより光の
入射側に設けた第２マイクロレンズとからなり、 前記第１マイクロレンズおよび前記第２マイクロレンズ
は、該固体撮像素子の周辺部に向かうにしたがって、該
第２マイクロレンズへ入射する光が該第１マイクロレン
ズを通して前記受光部開口内に入射するように、前記第
１マイクロレンズの中心軸および前記第２マイクロレン
ズの中心軸を前記受光部開口の中心よりそれぞれずらし
て設けられていることを特徴とする固体撮像素子。1. A solid-state imaging device having a microlens above a light-receiving unit opening, wherein the microlens comprises: a first microlens provided on a light incident side of the light-receiving unit opening; A second microlens provided on a light incident side of the first microlens, wherein the first microlens and the second microlens are arranged closer to a periphery of the solid-state imaging device; The center axis of the first microlens and the center axis of the second microlens are respectively shifted from the center of the light receiving unit opening such that light incident on the light receiving unit opening passes through the first micro lens. A solid-state imaging device, which is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9029931A JPH10229180A (en) | 1997-02-14 | 1997-02-14 | Solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9029931A JPH10229180A (en) | 1997-02-14 | 1997-02-14 | Solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10229180A true JPH10229180A (en) | 1998-08-25 |
Family
ID=12289743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9029931A Withdrawn JPH10229180A (en) | 1997-02-14 | 1997-02-14 | Solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10229180A (en) |
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