JPH08321595A - Solid state image sensor - Google Patents
Solid state image sensorInfo
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- JPH08321595A JPH08321595A JP7124999A JP12499995A JPH08321595A JP H08321595 A JPH08321595 A JP H08321595A JP 7124999 A JP7124999 A JP 7124999A JP 12499995 A JP12499995 A JP 12499995A JP H08321595 A JPH08321595 A JP H08321595A
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- Japan
- Prior art keywords
- microlens
- refractive index
- light receiving
- light
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、固体撮像装置のうち、
特に受光部上にマイクロレンズを備えた固体撮像装置に
関するものである。BACKGROUND OF THE INVENTION The present invention relates to a solid-state image pickup device,
In particular, the present invention relates to a solid-state imaging device having a microlens on the light receiving part.
【０００２】[0002]
【従来の技術】近年、固体撮像素子の小型化、高画素化
に伴う受光部面積の減少による感度の低下が問題となっ
ており、この問題を解決するために、現在では、一般的
に受光部上にマイクロレンズを備えた固体撮像装置が利
用されている。受光部上にマイクロレンズを備えること
により、受光部面積以上の入射光をマイクロレンズにて
集光でき、入射光を効率良く受光部に入射させることが
できる。そのため、入射光の利用率が上がり、感度の向
上が実現されている。2. Description of the Related Art In recent years, there has been a problem of a decrease in sensitivity due to a reduction in the area of a light receiving portion accompanying the miniaturization of a solid-state image pickup device and an increase in the number of pixels. A solid-state imaging device having a microlens on its part is used. By providing the microlens on the light receiving portion, the incident light having a larger area than the light receiving portion can be condensed by the microlens and the incident light can be efficiently incident on the light receiving portion. Therefore, the utilization rate of incident light is increased and the sensitivity is improved.
【０００３】以下に従来までのマイクロレンズを備えた
固体撮像装置について説明する。A conventional solid-state image pickup device having a microlens will be described below.
【０００４】図３は従来の固体撮像装置の主要部の構成
を示す断面図である。図３に示すように、従来の固体撮
像装置は、シリコンからなる半導体基板１の上に、Ｓi
Ｏ2等からなるゲート絶縁膜２を介して、選択的に多結
晶シリコン層からなる転送部３が形成される。この転送
部３の上に層間膜４を介してアルミニウムからなる遮光
部５が選択的に形成されており、その上層にアクリル系
樹脂からなる平坦化層37が形成される。さらにその上に
アクリル系または、ノボラック系樹脂からなり、断面が
半円状であるマイクロレンズ38が形成されて、構成され
ている。ここで、前記転送部３および、遮光部５が形成
されていない領域が受光部６であり、マイクロレンズ38
は、前記受光部６に対応してその上層に形成されてい
る。FIG. 3 is a sectional view showing the structure of the main part of a conventional solid-state image pickup device. As shown in FIG. 3, the conventional solid-state imaging device has a structure in which Si is formed on a semiconductor substrate 1 made of silicon.
The transfer portion 3 made of a polycrystalline silicon layer is selectively formed via the gate insulating film 2 made of O 2 or the like. A light shielding portion 5 made of aluminum is selectively formed on the transfer portion 3 via an interlayer film 4, and a flattening layer 37 made of an acrylic resin is formed thereon. Further, a microlens 38 made of an acrylic resin or a novolac resin and having a semicircular cross section is formed thereon to be configured. Here, the region where the transfer unit 3 and the light shielding unit 5 are not formed is the light receiving unit 6, and the microlens 38
Are formed in an upper layer corresponding to the light receiving portion 6.
【０００５】上記のように構成された固体撮像装置につ
いて、以下にその動作を説明する。まず、受光部６の上
方だけではなく遮光部５の上方にも入射してくる光がマ
イクロレンズ38により集光され、平坦化層37を通り、受
光部６に入射する。受光部６に入射した光は、その量に
応じて受光部６で信号電荷に変換される。The operation of the solid-state image pickup device configured as described above will be described below. First, the light that enters not only above the light receiving portion 6 but also above the light shielding portion 5 is condensed by the microlens 38, passes through the flattening layer 37, and enters the light receiving portion 6. The light incident on the light receiving unit 6 is converted into signal charges by the light receiving unit 6 according to the amount thereof.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上述し
た固体撮像装置における受光部６の開口面積は、近年の
固体撮像装置の小型化、高画素化にともなう単位画素面
積の縮小化および、転送部３や遮光部５の薄膜化、微細
化限界のため、縮小される傾向にあり、単位画素面積に
対する受光部６の開口面積の比率は、益々小さくなる傾
向にある。However, the aperture area of the light receiving portion 6 in the above-described solid-state image pickup device has a smaller unit pixel area due to the recent miniaturization of the solid-state image pickup device and the increase in the number of pixels, and the transfer portion 3 is provided. Due to the limitation of thinning and miniaturization of the light shielding portion 5, the light shielding portion 5 tends to be reduced, and the ratio of the opening area of the light receiving portion 6 to the unit pixel area tends to become smaller and smaller.
【０００７】以上のような状況において、従来の固体撮
像装置においては、マイクロレンズ38の周縁部に入射し
た光が遮光部５の肩で遮光されてしまい、受光部６に入
射しない光成分が発生し、マイクロレンズによる集光効
果が損なわれるという不都合が生じている。また、この
現象は、特に斜め方向の入射光成分が多い場合(ビデオ
カメラのレンズ絞りが開放に近い場合、または絞りが通
常でも、固体撮像装置の周縁部)に顕著に現れ、固体撮
像装置の感度向上、または感度の均一性向上に限界が生
じるという不都合があった。Under the above circumstances, in the conventional solid-state image pickup device, the light incident on the peripheral portion of the microlens 38 is shielded by the shoulder of the light shielding portion 5, and a light component not incident on the light receiving portion 6 is generated. However, there is an inconvenience that the light condensing effect of the microlenses is impaired. In addition, this phenomenon is particularly noticeable when there are many incident light components in the oblique direction (when the lens diaphragm of the video camera is close to the open or even when the diaphragm is normal), the phenomenon of the solid-state imaging device is increased. However, there is a problem in that there is a limit to the improvement of sensitivity or the uniformity of sensitivity.
【０００８】本発明は、上記のような不都合を解決する
ものであり、マイクロレンズによって集光された入射光
のうち、アルミニウムからなる遮光部によって遮光され
る光成分を極力少なくして、マイクロレンズの本来の効
果である感度向上効果がビデオカメラのレンズ絞りに影
響されることなく、充分に発揮でき、固体撮像装置自体
の小型化および高画素化の実現、ならびに画質の向上を
図ることができる固体撮像装置の提供を目的とする。The present invention is intended to solve the above-mentioned inconvenience, and in the incident light condensed by the microlens, the light component shielded by the light shielding part made of aluminum is reduced as much as possible, and the microlens is used. The original effect of improving the sensitivity can be sufficiently exerted without being affected by the lens aperture of the video camera, and the solid-state imaging device itself can be miniaturized and the number of pixels can be increased, and the image quality can be improved. An object is to provide a solid-state imaging device.
【０００９】[0009]
【課題を解決するための手段】本発明は上記目的を達成
するため、図１および図２に示すようにマイクロレンズ
９と受光部６の間において、マイクロレンズ９の下層に
マイクロレンズ材料よりも高い屈折率を持つ中間膜８を
有し、さらにその下層に前記中間膜８よりも低い屈折率
を持ち、かつ受光部中央に向かって凹状の曲率を持つ平
坦化層７を有するものである。In order to achieve the above object, the present invention provides a layer below the microlens 9 between the microlens 9 and the light receiving portion 6 as shown in FIG. 1 and FIG. An intermediate film 8 having a high refractive index is provided, and a flattening layer 7 having a refractive index lower than that of the intermediate film 8 and having a concave curvature toward the center of the light receiving portion is further provided thereunder.
【００１０】[0010]
【作用】本発明は、上述の構成により、マイクロレンズ
９に入射し集光された光は、マイクロレンズ９とその下
層の高屈折率の中間膜８との屈折率の差により屈折し、
固体撮像装置に対してほぼ垂直に入射することになる。
そして、受光部６直上の凹状の平坦化層７により、さら
に集光され、受光部６に入射する。この結果、マイクロ
レンズ９によって集光された入射光は、遮光部５によっ
て遮られる成分が減少するので、マイクロレンズの本来
の効果である感度向上効果が充分に発揮でき、受光部内
に効率よく入射光を集光できるので、固体撮像装置自体
の小型化および高画素化の実現、ならびに画質の向上を
図ることができる。According to the present invention, with the above-described structure, the light incident on the microlens 9 and condensed is refracted due to the difference in the refractive index between the microlens 9 and the intermediate film 8 having a high refractive index thereunder,
The light enters the solid-state imaging device almost vertically.
Then, the light is further condensed by the flattening layer 7 having a concave shape immediately above the light receiving portion 6 and is incident on the light receiving portion 6. As a result, the components of the incident light collected by the microlens 9 are blocked by the light shielding unit 5, so that the sensitivity improving effect, which is the original effect of the microlens, can be sufficiently exerted, and the light is efficiently incident on the light receiving unit. Since the light can be condensed, it is possible to reduce the size of the solid-state imaging device itself, increase the number of pixels, and improve the image quality.
【００１１】[0011]
【実施例】以下に本発明の各実施例について、図面を参
照しながら説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１２】図１は本発明の第１の実施例における固体
撮像装置の主要部分の構成を示す断面図である。FIG. 1 is a sectional view showing the structure of the main part of a solid-state image pickup device according to the first embodiment of the present invention.
【００１３】この固体撮像装置は、シリコンからなる半
導体基板１の上に、ＳiＯ2等からなるゲート絶縁膜２を
介して、選択的に多結晶シリコン層からなる転送部３が
形成される。この転送部３の上に層間膜４を介してアル
ミニウムからなる遮光部５が選択的に形成されており、
その上層に屈折率がＮ1であるアクリル系または、ＰＶ
Ａ(Ｐoly−Ｖinyl−Ａlcoholの略)系樹脂からなり、受
光部中央にむかって凹状の曲率を持つ平坦化層７を、さ
らにその上に前記平坦化層７およびマイクロレンズ９よ
りも高い屈折率Ｎ2をもつアクリル系または、ポリイミ
ド系樹脂からなる中間膜８を順次塗布して積層形成し、
最上層には、屈折率がＮ3であるアクリル系または、ノ
ボラック系樹脂からなる断面が半円状であるマイクロレ
ンズ９が形成されて、構成されている。In this solid-state image pickup device, a transfer portion 3 made of a polycrystalline silicon layer is selectively formed on a semiconductor substrate 1 made of silicon via a gate insulating film 2 made of SiO 2 or the like. A light shielding portion 5 made of aluminum is selectively formed on the transfer portion 3 via an interlayer film 4,
Acrylic or PV with refractive index N 1 on top
A flattening layer 7 made of A (abbreviation of Poly-Vinyl-Alcohol) -based resin and having a concave curvature toward the center of the light-receiving portion, and having a higher refractive index than the flattening layer 7 and the microlens 9 thereon. An intermediate film 8 made of an acrylic or polyimide resin having N 2 is sequentially applied to form a laminate,
In the uppermost layer, a microlens 9 made of an acrylic or novolac resin having a refractive index of N 3 and having a semicircular cross section is formed and configured.
【００１４】前記平坦化層７と、中間膜８、マイクロレ
ンズ９の各屈折率Ｎ1，Ｎ2，Ｎ3の関係は、Ｎ2＞Ｎ3，
Ｎ1となる。ここで、転送部３および、遮光部５が形成
されていない領域が受光部６であり、マイクロレンズ９
は、前記受光部６に対応してその上層に形成されてい
る。また、本実施例における平坦化層７の厚みは、一例
として受光部６上で約２μm、遮光部５上で約１μmであ
り、中間膜８の厚みは、約２μmである。The relationship between the flattening layer 7, the intermediate films 8 and the refractive indices N 1 , N 2 and N 3 of the microlenses 9 is N 2 > N 3 ,
It becomes N 1 . Here, the area where the transfer section 3 and the light shielding section 5 are not formed is the light receiving section 6, and the microlens 9
Are formed in an upper layer corresponding to the light receiving portion 6. The thickness of the flattening layer 7 in this embodiment is, for example, about 2 μm on the light receiving portion 6 and about 1 μm on the light shielding portion 5, and the thickness of the intermediate film 8 is about 2 μm.
【００１５】以上のように構成された固体撮像装置につ
いて、以下にその動作の説明をする。The operation of the solid-state image pickup device configured as described above will be described below.
【００１６】図１に示すように、固体撮像装置に入射
し、マイクロレンズ９によって集光された光は、マイク
ロレンズ９とその下層の高屈折率の中間膜８との屈折率
の差により屈折し、固体撮像装置に対してほぼ垂直に入
射することになる。そして、中間膜８と受光部６直上の
凹状の平坦化層７の屈折率差と平坦化層７の窪みによる
レンズ効果により、再度集光され、受光部６に入射す
る。この結果、マイクロレンズ９によって集光された入
射光は、遮光部５によって遮られる成分が減少するの
で、マイクロレンズの本来の効果である感度向上効果が
充分に発揮でき、受光部内に効率よく入射光を集光でき
るので、固体撮像装置自体の小型化および高画素化の実
現ならびに画質の向上を図ることができる。As shown in FIG. 1, the light incident on the solid-state image pickup device and condensed by the microlens 9 is refracted due to the difference in refractive index between the microlens 9 and the intermediate film 8 having a high refractive index therebelow. Then, the light enters the solid-state image pickup device almost vertically. Then, due to the difference in refractive index between the intermediate film 8 and the concave flattening layer 7 immediately above the light receiving portion 6 and the lens effect due to the depression of the flattening layer 7, the light is condensed again and is incident on the light receiving portion 6. As a result, the components of the incident light collected by the microlens 9 are blocked by the light shielding unit 5, so that the sensitivity improving effect, which is the original effect of the microlens, can be sufficiently exerted, and the light is efficiently incident on the light receiving unit. Since the light can be condensed, it is possible to reduce the size of the solid-state imaging device itself, increase the number of pixels, and improve the image quality.
【００１７】なお、上記第１の実施例では、平坦化層７
の屈折率Ｎ1、中間膜８の屈折率Ｎ2、そしてマイクロレ
ンズ９の屈折率Ｎ3の関係をＮ2＞Ｎ1，Ｎ3としたが、上
記屈折率の関係をＮ2＞Ｎ3＞Ｎ1とすれば、さらに集光
効果が向上する。また、上記各層で用いられる樹脂の屈
折率は、以下に示すような値が望ましい。Ｎ1＝1.2〜1.
3、Ｎ2＝1.8〜2.0、Ｎ3＝1.4〜1.6。In the first embodiment, the flattening layer 7
The relationship between the refractive index N 1 of the intermediate film 8, the refractive index N 2 of the intermediate film 8 and the refractive index N 3 of the microlens 9 is N 2 > N 1 and N 3 , but the relationship of the above refractive index is N 2 > N 3 When> N 1 , the light collecting effect is further improved. Further, the refractive index of the resin used in each of the above layers is preferably the following value. N 1 = 1.2-1.
3, N 2 = 1.8 to 2.0, N 3 = 1.4 to 1.6.
【００１８】以上、上記第1の実施例では、凹状の曲率
をもち、屈折率がＮ1なる平坦化層７、屈折率がＮ2なる
中間膜８および屈折率がＮ3なるマイクロレンズ９を順
次積層するようにしたが、図２の第2の実施例に示すよ
うに上記第1の実施例で述べた平坦化層７と受光部６、
遮光部５の間に屈折率がＮ4なる平坦化層10を追加する
ことにより、さらに遮光部５によって遮られる光成分を
減らすことができる。但し、平坦化層10の屈折率Ｎ4と
その他の平坦化層７、中間膜８、マイクロレンズ９の屈
折率の関係は、Ｎ2＞Ｎ3，Ｎ2＞Ｎ1＞Ｎ4となるような
樹脂を用いる必要がある。As described above, in the first embodiment, the flattening layer 7 having a concave curvature and a refractive index of N 1 , the intermediate film 8 having a refractive index of N 2, and the microlens 9 having a refractive index of N 3 are provided. Although the layers are sequentially laminated, as shown in the second embodiment of FIG. 2, the flattening layer 7 and the light receiving portion 6 described in the first embodiment,
By adding the flattening layer 10 having a refractive index of N 4 between the light shielding portions 5, it is possible to further reduce the light components shielded by the light shielding portions 5. However, the relationship between the refractive index N 4 of the flattening layer 10 and the other flattening layers 7, the intermediate film 8 and the microlenses 9 is such that N 2 > N 3 , N 2 > N 1 > N 4 are satisfied. It is necessary to use a different resin.
【００１９】なお、屈折率の関係をＮ2＞Ｎ3＞Ｎ1＞Ｎ4
とすればさらに集光効果が向上する。The relationship of the refractive index is N 2 > N 3 > N 1 > N 4
If so, the light collection effect is further improved.
【００２０】[0020]
【発明の効果】以上説明したような本発明の固体撮像装
置は、マイクロレンズによって集光された入射光のう
ち、遮光部によって遮られる光成分が減少し、より効率
よく入射光を受光部に取り込むことができるので、マイ
クロレンズの本来の効果である感度向上効果が充分に発
揮できるので、固体撮像装置自体の小型化および高画素
化、ならびに画質の向上を図ることができる。According to the solid-state image pickup device of the present invention as described above, of the incident light collected by the microlens, the light component blocked by the light shielding portion is reduced, and the incident light is more efficiently transmitted to the light receiving portion. Since it can be taken in, the effect of improving the sensitivity, which is the original effect of the microlens, can be sufficiently exerted, so that the solid-state imaging device itself can be downsized, the number of pixels can be increased, and the image quality can be improved.
【図１】本発明の第１の実施例における固体撮像装置の
主要部分の構成を示す断面図である。FIG. 1 is a sectional view showing a configuration of a main part of a solid-state imaging device according to a first embodiment of the present invention.
【図２】本発明の第２の実施例における固体撮像装置の
主要部分の構成を示す断面図である。FIG. 2 is a sectional view showing a configuration of a main part of a solid-state image pickup device according to a second embodiment of the present invention.
【図３】従来の固体撮像装置の主要部分の構成を示す断
面図である。FIG. 3 is a sectional view showing a configuration of a main part of a conventional solid-state imaging device.
１…半導体基板、 ２…ゲート絶縁膜、 ３…転送部、
４…層間膜、 ５…遮光部、 ６…受光部、 ７…平
坦化層(屈折率Ｎ1)、 ８…中間膜(屈折率Ｎ2)、９…マ
イクロレンズ(屈折率Ｎ3)、 10…低屈折率の平坦化層
(屈折率Ｎ4＜Ｎ1)。1 ... Semiconductor substrate, 2 ... Gate insulating film, 3 ... Transfer part,
4 ... Interlayer film, 5 ... Light-shielding part, 6 ... Light receiving part, 7 ... Flattening layer (refractive index N 1 ), 8 ... Intermediate film (refractive index N 2 ), 9 ... Microlens (refractive index N 3 ), 10 ... Low-refractive-index flattening layer
(Refractive index N 4 <N 1 ).
Claims (3)
固体撮像装置において、前記受光部と前記マイクロレン
ズの間にマイクロレンズと屈折率が異なる中間層を有す
ることを特徴とする固体撮像装置。1. A solid-state imaging device in which a microlens is formed on a light-receiving unit, wherein an intermediate layer having a refractive index different from that of the microlens is provided between the light-receiving unit and the microlens.
固体撮像装置において、マイクロレンズの下層にマイク
ロレンズ材料よりも高い屈折率を持つ中間膜を有し、さ
らに前記中間膜と受光部の間に前記中間膜よりも低い屈
折率を持ち、かつ受光部中央に向かって凹状の曲率を持
つ平坦膜を有することを特徴とする固体撮像装置。2. A solid-state imaging device having a microlens formed on a light receiving part, wherein an intermediate film having a higher refractive index than that of the microlens material is provided under the microlens, and the intermediate film and the light receiving part are provided. And a flat film having a lower refractive index than the intermediate film and having a concave curvature toward the center of the light receiving portion.
固体撮像装置において、マイクロレンズの下層にマイク
ロレンズ材料よりも高い屈折率を持つ中間膜を有し、さ
らに前記中間膜と受光部の間に前記中間膜よりも低い屈
折率を持ち、かつ受光部中央に向かって凹状の曲率を持
つ第１の平坦膜と、該第１の平坦膜よりもさらに低い屈
折率を持ち、かつ受光部中央に向かって凹状の曲率を持
つ第２の平坦膜を有することを特徴とする固体撮像装
置。3. A solid-state imaging device having a microlens formed on a light receiving part, wherein an intermediate film having a refractive index higher than that of the microlens material is provided in a lower layer of the microlens, and the intermediate film and the light receiving part are provided. A first flat film having a lower refractive index than the intermediate film and having a concave curvature toward the center of the light receiving portion, and a lower refractive index than the first flat film and having a light receiving portion center A solid-state imaging device having a second flat film having a concave curvature toward the front.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12499995A JP3386286B2 (en) | 1995-05-24 | 1995-05-24 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12499995A JP3386286B2 (en) | 1995-05-24 | 1995-05-24 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08321595A true JPH08321595A (en) | 1996-12-03 |
| JP3386286B2 JP3386286B2 (en) | 2003-03-17 |
Family
ID=14899385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12499995A Expired - Fee Related JP3386286B2 (en) | 1995-05-24 | 1995-05-24 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3386286B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100437819B1 (en) * | 1999-06-23 | 2004-06-26 | 주식회사 하이닉스반도체 | Charge coupled device and method of manufacturing the same |
| US7075164B2 (en) | 2001-12-28 | 2006-07-11 | Fuji Photo Film Co., Ltd. | Semiconductor photoelectric conversion device suitable for miniaturization |
| US7135666B2 (en) | 2003-10-02 | 2006-11-14 | Canon Kabushiki Kaishi | Image pick-up device having well structure and image pick-up system using the image pick-up device |
| US7283305B2 (en) | 2003-12-03 | 2007-10-16 | Canon Kabushiki Kaisha | Solid state image pickup device, method for producing the same, and image pickup system comprising the solid state image pickup device |
| US10431617B2 (en) | 2017-02-28 | 2019-10-01 | Canon Kabushiki Kaisha | Photoelectric conversion device and apparatus |
-
1995
- 1995-05-24 JP JP12499995A patent/JP3386286B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100437819B1 (en) * | 1999-06-23 | 2004-06-26 | 주식회사 하이닉스반도체 | Charge coupled device and method of manufacturing the same |
| US7075164B2 (en) | 2001-12-28 | 2006-07-11 | Fuji Photo Film Co., Ltd. | Semiconductor photoelectric conversion device suitable for miniaturization |
| US7135666B2 (en) | 2003-10-02 | 2006-11-14 | Canon Kabushiki Kaishi | Image pick-up device having well structure and image pick-up system using the image pick-up device |
| US7283305B2 (en) | 2003-12-03 | 2007-10-16 | Canon Kabushiki Kaisha | Solid state image pickup device, method for producing the same, and image pickup system comprising the solid state image pickup device |
| US7646493B2 (en) | 2003-12-03 | 2010-01-12 | Canon Kabushiki Kaisha | Solid state image pickup device, method for producing the same, and image pickup system comprising the solid state image pickup device |
| US10431617B2 (en) | 2017-02-28 | 2019-10-01 | Canon Kabushiki Kaisha | Photoelectric conversion device and apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3386286B2 (en) | 2003-03-17 |
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