TWM587775U - Display device having pixel structure and fingerprint identification chip - Google Patents

Display device having pixel structure and fingerprint identification chip Download PDF

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Publication number
TWM587775U
TWM587775U TW108212301U TW108212301U TWM587775U TW M587775 U TWM587775 U TW M587775U TW 108212301 U TW108212301 U TW 108212301U TW 108212301 U TW108212301 U TW 108212301U TW M587775 U TWM587775 U TW M587775U
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Taiwan
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light
layer
color filter
display device
substrate
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TW108212301U
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Chinese (zh)
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莊立聖
劉子維
許誠顯
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奕力科技股份有限公司
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Publication of TWM587775U publication Critical patent/TWM587775U/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • G06V40/1324Sensors therefor by using geometrical optics, e.g. using prisms
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1334Constructional arrangements; Manufacturing methods based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/13718Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on a change of the texture state of a cholesteric liquid crystal
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals

Abstract

A display device capable of detecting a fingerprint of a finger includes a first substrate, a photo sensor disposed on the first substrate, a pixel structure disposed on the first substrate for generating a detecting light and a light collimating structure corresponding to the photo sensor and disposed between the photo sensor and the finger, wherein the light collimating structure includes a multi-layer structure for filtering a reflection light reflected from the finger.

Description

具有像素結構的顯示裝置與指紋辨識晶片Display device with pixel structure and fingerprint recognition chip

本創作是有關於一種顯示裝置與指紋辨識晶片,特別是有關於一種具有像素結構的顯示裝置與指紋辨識晶片。This creation relates to a display device and a fingerprint recognition chip, and more particularly to a display device with a pixel structure and a fingerprint recognition chip.

隨著科技日新月異,可攜式顯示裝置,例如:智慧型手機(smart phone)、平板電腦(tablet PC)或是筆記型電腦(laptop PC)等,已成為了人們生活中必備之工具。隨著其功能越來越多元,其中通常儲存有私人資料,例如電話簿、相片或個人身分資訊,而具有一定的隱密性。為了保護這些資料,已發展出將指紋辨識裝置運用在可攜式顯示裝置中。不過,傳統指紋辨識裝置不具透光性,無法置於顯示區域內,因此限制了顯示裝置的螢幕佔比。為此,發展出光學式的指紋辨識裝置,使其能夠在不影響螢幕佔比的情況下偵測到指紋。光學式的指紋辨識裝置係透過偵測從手指反射光線來獲取指紋影像,然而光線受到手指反射之後會發散,導致對應不同指紋的反射光會彼此干擾,使得指紋辨識裝置所偵測到的影像不佳,進而影響指紋辨識的結果。因此,如何減少對應不同指紋的反射光的彼此干擾以改善指紋辨識的準確性仍是非常重要的議題。With the rapid development of technology, portable display devices, such as: smart phones, tablet PCs, or laptop PCs, have become essential tools in people's lives. As its functions become more diverse, private data, such as phone books, photos, or personal identity information, are often stored in it, with some privacy. To protect this data, fingerprint recognition devices have been developed for use in portable display devices. However, traditional fingerprint recognition devices are not transparent and cannot be placed in the display area, so the screen ratio of the display device is limited. For this reason, an optical fingerprint recognition device has been developed to enable it to detect fingerprints without affecting the screen ratio. The optical fingerprint recognition device obtains the fingerprint image by detecting the light reflected from the finger. However, the light will diverge after being reflected by the finger, causing the reflected light corresponding to different fingerprints to interfere with each other, making the image detected by the fingerprint recognition device not. It will affect the result of fingerprint recognition. Therefore, how to reduce mutual interference of reflected light corresponding to different fingerprints to improve the accuracy of fingerprint recognition is still a very important issue.

本創作提供了一種具有像素結構的顯示裝置,該顯示裝置可用以偵測手指的指紋,其中顯示裝置包括了光準直結構,用以過濾角度過大的入射光。顯示裝置可藉由此光準直結構減少到達光感測器的雜散光,並提升指紋辨識的可靠度。This creation provides a display device with a pixel structure. The display device can be used to detect the fingerprint of a finger. The display device includes a light collimation structure to filter incident light with an excessive angle. The display device can reduce stray light reaching the light sensor through the light collimation structure, and improve the reliability of fingerprint recognition.

根據一些實施例,本創作提供了一種具有像素結構的顯示裝置,可用以偵測一手指的指紋。顯示裝置包括一第一基板、設置在第一基板上的一光感測器、以及對應光感測器,且設置在光感測器與手指之間的一光準直結構。其中,光準直結構包括一多層結構,且過濾由手指反射的一反射光。According to some embodiments, the present invention provides a display device with a pixel structure, which can be used to detect a fingerprint of a finger. The display device includes a first substrate, a light sensor disposed on the first substrate, and a light collimating structure corresponding to the light sensor and disposed between the light sensor and a finger. The light collimation structure includes a multilayer structure, and filters a reflected light reflected by a finger.

根據一些實施例,本創作提供一種指紋辨識晶片,用於在顯示裝置中偵測一手指的指紋,顯示裝置包括一光感測器以及一光準直結構,光準直結構設置在光感測器與手指之間。光準直結構包括一多層結構,用以過濾由手指反射的一反射光。指紋辨識晶片電連接於光感測器,利用過濾後的反射光繪製一指紋圖樣,與一已知指紋圖樣比對,以達到辨識功能。According to some embodiments, the present invention provides a fingerprint recognition chip for detecting a finger's fingerprint in a display device. The display device includes a light sensor and a light collimation structure. The light collimation structure is disposed on the light sensor. Device and fingers. The light collimation structure includes a multilayer structure for filtering a reflected light reflected by a finger. The fingerprint recognition chip is electrically connected to the light sensor, and uses the filtered reflected light to draw a fingerprint pattern and compares it with a known fingerprint pattern to achieve a recognition function.

本領域技術人員能可經由參考以下的詳細描述並同時結合所附圖式而理解本創作,須注意的是,為了使讀者能容易瞭解及並使圖式簡潔,本創作的圖式只繪出顯示裝置的一部分,且所附圖式中的特定元件並非依照實際比例繪圖。此外,圖中各元件的數量及尺寸僅作為示意,並非用來限制本創作的範圍。Those skilled in the art can understand this creation by referring to the following detailed description and combining the attached drawings. It should be noted that, in order to make the reader easy to understand and keep the drawings simple, the drawings of this creation are only drawn Part of the display device, and specific elements in the drawings are not drawn to actual scale. In addition, the number and size of each element in the figure are for illustration only, and are not intended to limit the scope of this creation.

應了解到,當元件或膜層被稱為在另一個元件或膜層“上”或“連接到”另一個元件或膜層時,它可以直接在此另一元件或膜層上或直接連接到此另一元件或膜層,或者兩者之間存在有插入的元件或膜層。相反地,當元件被稱為“直接”在另一個元件或膜層“上”或“直接連接到”另一個元件或膜層時,兩者之間不存在有插入的元件或膜層。It should be understood that when an element or film is referred to as being "on" or "connected to" another element or film, it can be directly on or directly connected to the other element or film. So far, another element or film layer, or an interposed element or film layer exists between the two. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or film layer, there is no intervening element or film layer in between.

雖然術語第一、第二、第三…可用以描述多種組成元件,但組成元件並不以此術語為限。此術語僅用於區別說明書內單一組成元件與其他組成元件。權利要求中可不使用相同術語,而依照權利要求中元件宣告的順序以第一、第二、第三…取代。因此,在下文說明書中,第一組成元件在權利要求中可能為第二組成元件。Although the terms first, second, third ... can be used to describe various constituent elements, the constituent elements are not limited by this term. This term is only used to distinguish a single constituent element from other constituent elements in the description. The same terms may not be used in the claims, but may be replaced by first, second, third, etc. in the order of element declarations in the claims. Therefore, in the following description, a first constituent element may be a second constituent element in a claim.

須知悉的是,以下所舉實施例可以在不脫離本揭露的精神下,將數個不同實施例中的技術特徵進行替換、重組、混合以完成其他實施例。It should be noted that the following embodiments can be replaced, recombined, and mixed to complete other embodiments without departing from the spirit of the present disclosure.

請參考第1圖、第2圖和第3圖,第1圖為本創作第一實施例的顯示裝置的剖視示意圖,第2圖為本創作第一實施例的顯示裝置的部分功能方塊示意圖,第3圖為本創作第一實施例的像素結構的俯視示意圖,如第1圖所示,顯示裝置100包括第一基板102、複數個像素結構104、複數個光準直結構106、複數個光感測器108和第二基板116。為清楚顯示像素結構104、光準直結構106與光感測器108的位置,第1圖僅顯示單一個光準直結構106與光感測器108,但不限於此。第二基板116設置在第一基板102上,以作為顯示裝置100被手指FG觸摸的基板。第二基板116可例如為覆蓋鏡片以覆蓋第一基板102、像素結構104、光準直結構106和光感測器108,但不以此為限。在一些實施例中,第二基板116可例如另包括偏光片與黏著層,但不限於此。在一些實施例中,第二基板116也可另包括觸控元件,用以偵測手指的位置。像素結構104設置在第一基板102上,用以產生光線。每一像素結構相關於一單位的顯示效果。本實施例的顯示裝置100為非自發光顯示裝置,下文以液晶顯示裝置為例作進一步描述,但不限於此。在本實施例中,顯示裝置100可另包括第三基板118、背光模組BL與黑色矩陣BM,像素結構104設置於第一基板102與第三基板118之間,且背光模組BL設置於第一基板102下方,背光模組BL與第一基板102間可包含一偏光片(未繪示)。第一基板102與第三基板118可例如為玻璃基板,但不以此為限。如第1圖所示,當顯示裝置100進行指紋辨識時,背光模組BL可產生背光,透過控制像素結構104的透光或遮蔽,讓像素結構104中的至少一個可允許背光通過,使得此像素結構104提供偵測光L,且偵測光L在經過手指FG反射後可產生一個或複數個反射光,例如第1圖所示的光線L1和光線L2,其中光線L1代表反射光中進行方向與光準直結構106的上表面106a的法線方向的夾角(即入射角)較大的光線(即雜散光),光線L2代表反射光中進行方向與光準直結構106的上表面106a的法線方向的夾角(即入射角)較小的光線。Please refer to FIG. 1, FIG. 2, and FIG. 3. FIG. 1 is a schematic cross-sectional view of a display device according to the first embodiment of the creation, and FIG. 2 is a functional block diagram of the display device according to the first embodiment of the creation. Figure 3 is a schematic top view of the pixel structure of the first embodiment of the creation. As shown in Figure 1, the display device 100 includes a first substrate 102, a plurality of pixel structures 104, a plurality of light collimation structures 106, and a plurality of The light sensor 108 and the second substrate 116. In order to clearly display the positions of the pixel structure 104, the light collimation structure 106, and the light sensor 108, FIG. 1 only shows a single light collimation structure 106 and the light sensor 108, but is not limited thereto. The second substrate 116 is disposed on the first substrate 102 as a substrate on which the display device 100 is touched by the finger FG. The second substrate 116 may be, for example, a cover lens to cover the first substrate 102, the pixel structure 104, the light collimation structure 106, and the light sensor 108, but is not limited thereto. In some embodiments, the second substrate 116 may include, for example, a polarizer and an adhesive layer, but is not limited thereto. In some embodiments, the second substrate 116 may further include a touch element for detecting the position of the finger. The pixel structure 104 is disposed on the first substrate 102 to generate light. Each pixel structure is related to a unit display effect. The display device 100 of this embodiment is a non-self-luminous display device. The liquid crystal display device is taken as an example for further description, but it is not limited thereto. In this embodiment, the display device 100 may further include a third substrate 118, a backlight module BL and a black matrix BM, the pixel structure 104 is disposed between the first substrate 102 and the third substrate 118, and the backlight module BL is disposed on Below the first substrate 102, a polarizer (not shown) may be included between the backlight module BL and the first substrate 102. The first substrate 102 and the third substrate 118 may be glass substrates, but not limited thereto. As shown in FIG. 1, when the display device 100 performs fingerprint recognition, the backlight module BL can generate a backlight. By controlling the light transmission or shielding of the pixel structure 104, at least one of the pixel structures 104 can allow the backlight to pass through. The pixel structure 104 provides detection light L, and the detection light L can generate one or more reflected light after being reflected by the finger FG, such as light L1 and light L2 shown in FIG. 1, where light L1 represents reflected light. Light (ie, stray light) with a large angle (ie, incident angle) between the direction and the normal direction of the upper surface 106a of the light collimation structure 106, and the light ray L2 represents the proceeding direction of the reflected light and the upper surface 106a of the light collimation structure 106 Light with a smaller angle (ie, angle of incidence) in the direction of the normal.

在本實施例中,像素結構104可包括薄膜電晶體(thin film transistor,TFT)層110、液晶層112和彩色濾光層114,其中薄膜電晶體層110設置於液晶層112與第一基板102之間,且彩色濾光層114設置於液晶層112與第三基板118之間,但不以此為限。像素結構104還可包括設置在液晶層112與薄膜電晶體層110之間的像素電極DE,但不以此為限。薄膜電晶體層110可例如包括一個或複數個薄膜電晶體TFT,電性連接像素電極DE,藉此控制位於像素電極DE上的液晶層112中的液晶分子。第1圖所示的薄膜電晶體TFT的位置僅為例示,但不以此為限。在一些實施例中,薄膜電晶體TFT可位於黑色矩陣BM的正下方。液晶層112設置於薄膜電晶體層110與彩色濾光層114之間,並可包括液晶材料,例如向列型(nematic)液晶、層列型(smectic)液晶或其他合適的液晶材料,但不以此為限。彩色濾光層114可包括複數個彩色濾光片,但本創作不以此為限。根據本實施例,光感測器108設置在第一基板102上,更具體來說,光感測器108位於薄膜電晶體層110中,但不以此為限。此外,光感測器108可例如包括光電二極體、光電電晶體或其他合適的光感測元件,但不以此為限。本實施例中的光感測器108可用來接收偵測光L經由手指FG反射後的反射光,並以此進行指紋辨識。詳言之,本創作可包括一指紋辨識晶片109,其可用於在顯示裝置100中偵測手指FG的指紋。如第2圖所示,光感測器108可電連接於一指紋辨識晶片109,指紋辨識晶片109可透過光感測器108接收的反射光繪製指紋圖樣,與系統內存指紋圖樣比對,並達到辨識功能。指紋辨識晶片109可為一獨立功能晶片,也可為一整合指紋辨識、觸控與顯示晶片,本創作不以此為限。須注意的是,此處的「可用來接收偵測光L經由手指FG反射後的反射光」的光感測器可不限於第1圖中所示的光感測器108。舉例來說,光線L2可被光感測器108接收,且可被定義為入射角較小的準直光,而光線L1可射向光感測器108右側的另一個光感測器(第1圖中未示出),且對於該光感測器而言可為入射角較大的雜散光,但不以此為限。下文中關於光感測器吸收反射光的內容可參考上述說明,故不再贅述。光準直結構106設置於光感測器108與手指FG之間,用來過濾朝向光感測器108的入射角過大的反射光,使入射角較小的反射光可被光感測器108接收,進而降低同一光感測器108接收到由手指不同部位反射的反射光,藉此提升光感測器108所偵測到的影像品質。光準直結構106在方向D1上可與光感測器108重疊,或是說,光準直結構106在方向D1上可覆蓋光感測器108,但本創作不以此為限。根據本實施例,如第1圖所示,光準直結構106可設置於液晶層112與第二基板116之間,更具體來說,光準直結構106設置在彩色濾光層114與第三基板118之間以及黑色矩陣BM與第三基板118之間,但不以此為限。在一些實施例中,光準直結構106也可設置於第三基板118與第二基板116之間,或者設置於液晶層112與光感測器108之間。根據本實施例,光準直結構106可包括多層結構,用來過濾偵測光L經由手指FG反射後角度較大的光線L1,使得光線L1無法到達光感測器108,進而改善指紋辨識的效果。須注意的是,上述所提到的「用來過濾偵測光L經由手指FG反射後角度較大的光線L1」的光準直結構可不限於第1圖所示的光準直結構106。舉例來說,如上文所述,光線L1可為射向位於第1圖所示的光感測器108右側的另一光感測器的大角度雜散光,因此光線L1可由對應於該另一光感測器的光準直結構(第1圖未示出)所過濾,並改善該另一光感測器的指紋辨識的效果,而第1圖所示的光準直結構106可使角度較小的光線L2通過,並過濾掉來自手指FG的其他部位所反射的大角度雜散光(第1圖未示出),但不以此為限。下文中關於光準直結構106過濾雜散光的內容可參考上述內容,故不再贅述。In this embodiment, the pixel structure 104 may include a thin film transistor (TFT) layer 110, a liquid crystal layer 112, and a color filter layer 114. The thin film transistor layer 110 is disposed on the liquid crystal layer 112 and the first substrate 102. The color filter layer 114 is disposed between the liquid crystal layer 112 and the third substrate 118, but is not limited thereto. The pixel structure 104 may further include a pixel electrode DE disposed between the liquid crystal layer 112 and the thin film transistor layer 110, but is not limited thereto. The thin film transistor layer 110 may include, for example, one or more thin film transistor TFTs, which are electrically connected to the pixel electrode DE, thereby controlling the liquid crystal molecules in the liquid crystal layer 112 located on the pixel electrode DE. The position of the thin film transistor TFT shown in FIG. 1 is merely an example, but is not limited thereto. In some embodiments, the thin film transistor TFT may be located directly below the black matrix BM. The liquid crystal layer 112 is disposed between the thin film transistor layer 110 and the color filter layer 114, and may include a liquid crystal material, such as a nematic liquid crystal, a smectic liquid crystal, or other suitable liquid crystal materials, but not This is the limit. The color filter layer 114 may include a plurality of color filters, but the creation is not limited thereto. According to this embodiment, the light sensor 108 is disposed on the first substrate 102. More specifically, the light sensor 108 is located in the thin film transistor layer 110, but is not limited thereto. In addition, the light sensor 108 may include, but is not limited to, a photodiode, a phototransistor, or other suitable light sensing elements. The light sensor 108 in this embodiment can be used to receive the reflected light after the detection light L is reflected by the finger FG, and to perform fingerprint identification. In detail, the creation may include a fingerprint recognition chip 109, which may be used to detect the fingerprint of the finger FG in the display device 100. As shown in FIG. 2, the light sensor 108 can be electrically connected to a fingerprint recognition chip 109. The fingerprint recognition chip 109 can draw a fingerprint pattern through the reflected light received by the light sensor 108 and compare it with the fingerprint pattern of the system memory. Achieve recognition function. The fingerprint recognition chip 109 may be an independent function chip or an integrated fingerprint recognition, touch and display chip, which is not limited in this creation. It should be noted that the light sensor “which can be used to receive the reflected light after the detection light L is reflected by the finger FG” may not be limited to the light sensor 108 shown in FIG. 1. For example, the light L2 can be received by the light sensor 108 and can be defined as collimated light with a smaller incident angle, and the light L1 can be directed to another light sensor on the right side of the light sensor 108 (No. (Not shown in Fig. 1), and the light sensor may be stray light with a large incident angle, but is not limited thereto. For the content of the light sensor absorbing reflected light in the following, please refer to the above description, so it will not be repeated here. The light collimation structure 106 is disposed between the light sensor 108 and the finger FG, and is used to filter reflected light with an excessively large incident angle toward the light sensor 108, so that the reflected light with a smaller incident angle can be detected by the light sensor 108. Receiving, thereby reducing the reflected light reflected by different parts of the finger received by the same light sensor 108, thereby improving the image quality detected by the light sensor 108. The light collimation structure 106 may overlap the light sensor 108 in the direction D1, or the light collimation structure 106 may cover the light sensor 108 in the direction D1, but this creation is not limited thereto. According to this embodiment, as shown in FIG. 1, the light collimation structure 106 may be disposed between the liquid crystal layer 112 and the second substrate 116. More specifically, the light collimation structure 106 is disposed between the color filter layer 114 and the first filter layer 114. Between the three substrates 118 and between the black matrix BM and the third substrate 118, but not limited thereto. In some embodiments, the light collimation structure 106 may also be disposed between the third substrate 118 and the second substrate 116 or between the liquid crystal layer 112 and the light sensor 108. According to this embodiment, the light collimation structure 106 may include a multilayer structure for filtering the light L1 with a larger angle after the detection light L is reflected by the finger FG, so that the light L1 cannot reach the light sensor 108, thereby improving the fingerprint recognition. effect. It should be noted that the light collimating structure “to filter the light L1 with a larger angle after the detection light L is reflected by the finger FG” may not be limited to the light collimating structure 106 shown in FIG. 1. For example, as described above, the light L1 may be a large-angle stray light directed to another light sensor located on the right side of the light sensor 108 shown in FIG. 1, so the light L1 may be corresponding to the other light sensor. The light collimation structure (not shown in FIG. 1) of the light sensor is filtered, and the fingerprint recognition effect of the other light sensor is improved, and the light collimation structure 106 shown in FIG. 1 can make an angle The smaller light L2 passes through and filters out the large-angle stray light reflected from other parts of the finger FG (not shown in Fig. 1), but is not limited thereto. For the content of filtering the stray light by the light collimation structure 106 in the following, please refer to the above content, so it will not be repeated here.

如第3圖所示,在本實施例中,每一像素結構104都對應至少一個由黑色矩陣BM定義的開口OP,使得每個像素結構104所產生的光線可從對應的開口OP射出。第1圖所示的彩色濾光片可區分為第一彩色濾光片114a、第二彩色濾光片114b與第三彩色濾光片114c,分別設置於對應的開口OP中,第一彩色濾光片114a、第二彩色濾光片114b與第三彩色濾光片114c可分別具有不同的顏色,使得像素結構104所產生的光線顏色可混和出白色。在本實施例的顯示裝置100中,光感測器108可例如設置於第二彩色濾光片下,使光感測器108可偵測能通過第二彩色濾光片的光線。舉例來說,第二彩色濾光片可為綠色彩色濾光片,但不限於此。As shown in FIG. 3, in this embodiment, each pixel structure 104 corresponds to at least one opening OP defined by a black matrix BM, so that light generated by each pixel structure 104 can be emitted from the corresponding opening OP. The color filters shown in FIG. 1 can be divided into a first color filter 114a, a second color filter 114b, and a third color filter 114c, which are respectively disposed in corresponding openings OP. The first color filter The light filters 114a, the second color filter 114b, and the third color filter 114c may have different colors, respectively, so that the color of the light generated by the pixel structure 104 can be mixed into white. In the display device 100 of this embodiment, the light sensor 108 may be disposed under the second color filter, for example, so that the light sensor 108 can detect light that can pass through the second color filter. For example, the second color filter may be a green color filter, but is not limited thereto.

如第3圖所示,根據本實施例,在方向D1上,至少一部分的光準直結構106可位於開口OP中,用以接收從手指反射的反射光。光準直結構106在方向D1上的面積可大於光感測器108在方向D1上的面積,以有效阻隔角度較大的光線L1。在本實施例中,每一像素結構104可具有用以產生光線的顯示區域DR,且顯示區域DR可由光準直結構106與黑色矩陣BM定義。光準直結構106的面積可小於顯示區域DR在方向D1上的面積。舉例來說,光準直結構106在方向D1上的面積與顯示區域DR在方向D1上的面積的比值可例如為0.2、0.1、0.05或更少,但不以此為限。根據本實施例,可盡量降低光準直結構106在方向D1上的面積與顯示區域DR在方向D1上的面積的比值,以避免使用者觀看到的影像受到光準直結構106的影響而改變。As shown in FIG. 3, according to this embodiment, at least a part of the light collimating structure 106 may be located in the opening OP in the direction D1 to receive the reflected light reflected from the finger. The area of the light collimation structure 106 in the direction D1 may be larger than the area of the light sensor 108 in the direction D1 to effectively block the light L1 with a larger angle. In this embodiment, each pixel structure 104 may have a display area DR for generating light, and the display area DR may be defined by the light collimation structure 106 and the black matrix BM. The area of the light collimation structure 106 may be smaller than the area of the display area DR in the direction D1. For example, the ratio of the area of the light collimation structure 106 in the direction D1 to the area of the display region DR in the direction D1 may be, for example, 0.2, 0.1, 0.05, or less, but is not limited thereto. According to this embodiment, the ratio of the area of the light collimation structure 106 in the direction D1 to the area of the display area DR in the direction D1 can be reduced as much as possible, so as to prevent the image viewed by the user from being affected by the light collimation structure 106. .

如第1圖所示,顯示裝置100還可選擇性地包括遮光層LS。遮光層LS設置在光感測器108的下方,詳細來說,設置在光感測器108與第一基板102之間。遮光層LS在方向D1上可與光感測器108重疊,或是說光感測器108在方向D1上可覆蓋遮光層LS。根據本實施例,遮光層LS可阻擋背光(例如光線L3)進入光感測器108中,以避免指紋辨識的效果受到光線L3的影響。As shown in FIG. 1, the display device 100 may optionally further include a light shielding layer LS. The light-shielding layer LS is disposed below the light sensor 108. Specifically, the light-shielding layer LS is disposed between the light sensor 108 and the first substrate 102. The light shielding layer LS may overlap the light sensor 108 in the direction D1, or the light sensor 108 may cover the light shielding layer LS in the direction D1. According to this embodiment, the light-shielding layer LS can block the backlight (for example, light L3) from entering the light sensor 108 to prevent the effect of fingerprint recognition from being affected by the light L3.

請參考第4圖和第5圖,第4圖為本創作第一實施例的一變化實施例的光準直結構的剖視示意圖,第5圖為本創作第一實施例的一變化實施例中當光線穿過光準直結構時入射角與出射光的強度的關係圖。如第4圖所示,本實施例的光準直結構106可為多層結構,其中多層結構可例如包括複數個第一膜層F1和複數個第二膜層F2,且第一膜層F1和第二膜層F2交替堆疊,但不以此為限。在一些實施例中,多層結構可例如由三種或更多種膜層交替堆疊所形成,本創作並不以此為限。根據本實施例,第一膜層F1與第二膜層F2具有不同的折射率。舉例來說,第一膜層F1可例如包括具有折射率為1.47的氧化矽,第二膜層F2可例如包括具有折射率為1.85的氮化矽,但不以此為限。此外,多層結構的層數與厚度可根據不同的需求有所改變,本創作並不以此為限。舉例來說,多層結構可包括11對的第一膜層F1和第二膜層F2,其中第二膜層F2的厚度可例如為74奈米(nm),最中間的第一膜層F1(即,多層結構中從上計算的第6層第一膜層F1)的厚度可例如為187奈米,其餘第一膜層F1的厚度可例如為93奈米,但不以此為限。此外,光準直結構106還可包括第三膜層F3,其中第三膜層F3可例如包括氟化鎂(MgF 2),但不以此為限。如第4圖所示,當光線L’(即第1圖中的光線L1或光線L2)進入光準直結構106時,光線L’與光準直結構106的上表面106a的法線FL方向(即方向D1)之間可具有夾角φ(即入射角)。隨著夾角φ的大小不同,光線L’通過光準直結構106之後的出射光L2’的強度也可不同。舉例來說,第5圖中的x軸為夾角φ的數值,其中夾角φ的範圍為-90度到90度(-90度≦夾角φ≦90度),y軸則為光強度經過歸一化(normalize)之後的數值。詳細來說,當夾角φ的數值為0時,光線L'的行進方向與法線FL的方向相同,而在夾角φ的數值為正數時,光線L’是從右側射入光準直結構106,在夾角φ的數值為負數時,光線L’是從左側射入光準直結構106。如第5圖所示,當光線L’以夾角φ為0度的方式進入光準直結構106之後,出射光L2’的光強度可為最大。此外,當夾角φ的絕對值大於30度時(即,夾角φ≧30度或夾角φ≦-30度),出射光L2'的強度可降低至最大光強度的60%,其中最大光強度即為上述當夾角φ為0度時,出射光L2’的強度,但不以此為限。須注意的是,光線L’的顏色可例如包括紅色、綠色、藍色或其他適合的顏色,而光準直結構106中多層結構和其他膜層的材料與厚度可根據光線L’的顏色進行設計,本創作並不以此為限。由上述可知,當光線L’進入光準直結構106的夾角φ過大時,光線L’可視為影響指紋辨識的雜散光(例如,第1圖中的光線L1,但不限於此),由於本實施例中包括第4圖所示的多層結構的光準直結構106可有效的阻擋雜散光(例如,降低雜散光進入光準直結構106之後所產生的出射光L2’的光強度)到達光感測器(即第1圖所示的光感測器108),因此指紋辨識的效果可有效改善。應特別注意的是,本實施例中具有多層結構的光準直結構106與一般光準直器(collimator)之架構不同,且成本遠較一般光準直器(collimator)來得低廉,厚度則遠較一般覆蓋鏡片來得薄。此特性使得光準直結構106可被利用於本創作所有的實施例中。 Please refer to FIG. 4 and FIG. 5. FIG. 4 is a schematic cross-sectional view of a light collimation structure of a modified embodiment of the first embodiment of the creation, and FIG. 5 is a modified embodiment of the first embodiment of the creation. The relationship between the incident angle and the intensity of the outgoing light when the light passes through the light collimation structure. As shown in FIG. 4, the light collimation structure 106 in this embodiment may be a multilayer structure, where the multilayer structure may include, for example, a plurality of first film layers F1 and a plurality of second film layers F2, and the first film layers F1 and The second film layers F2 are alternately stacked, but not limited thereto. In some embodiments, the multilayer structure may be formed, for example, by alternately stacking three or more film layers, and the present invention is not limited thereto. According to this embodiment, the first film layer F1 and the second film layer F2 have different refractive indexes. For example, the first film layer F1 may include silicon oxide having a refractive index of 1.47, and the second film layer F2 may include silicon nitride having a refractive index of 1.85, but is not limited thereto. In addition, the number of layers and thickness of the multilayer structure can be changed according to different needs, and this creation is not limited to this. For example, the multilayer structure may include 11 pairs of the first film layer F1 and the second film layer F2, where the thickness of the second film layer F2 may be, for example, 74 nanometers (nm), and the middlemost first film layer F1 ( That is, the thickness of the sixth first film layer F1) calculated from above in the multilayer structure may be, for example, 187 nanometers, and the thickness of the remaining first film layer F1 may be, for example, 93 nanometers, but is not limited thereto. In addition, the light collimation structure 106 may further include a third film layer F3, where the third film layer F3 may include, for example, magnesium fluoride (MgF 2 ), but is not limited thereto. As shown in FIG. 4, when the light ray L ′ (that is, the light ray L1 or the light ray L2 in FIG. 1) enters the light collimating structure 106, the light ray L ′ and the normal line FL of the upper surface 106 a of the light collimating structure 106 are directed. (That is, the direction D1) may have an included angle φ (that is, an incident angle). As the angle φ is different, the intensity of the outgoing light L2 ′ after the light L ′ passes through the light collimating structure 106 may also be different. For example, the x-axis in Figure 5 is the value of the included angle φ, where the included angle φ ranges from -90 degrees to 90 degrees (-90 degrees ≦ included angle φ ≦ 90 degrees), and the y-axis is the normalized light intensity. The value after normalizing. Specifically, when the value of the included angle φ is 0, the direction of travel of the light ray L ′ is the same as the direction of the normal line FL, and when the value of the included angle φ is a positive number, the light ray L ′ enters the light collimation structure 106 from the right side. When the value of the included angle φ is negative, the light ray L ′ enters the light collimation structure 106 from the left side. As shown in FIG. 5, after the light L ′ enters the light collimation structure 106 with an included angle φ of 0 degrees, the light intensity of the outgoing light L2 ′ may be the maximum. In addition, when the absolute value of the included angle φ is greater than 30 degrees (that is, the included angle φ ≧ 30 degrees or the included angle φ ≦ -30 degrees), the intensity of the emitted light L2 ′ can be reduced to 60% of the maximum light intensity, where the maximum light intensity is The above is the intensity of the emitted light L2 'when the included angle φ is 0 degrees, but it is not limited thereto. It should be noted that the color of the light L ′ may include, for example, red, green, blue, or other suitable colors, and the material and thickness of the multilayer structure and other film layers in the light collimation structure 106 may be determined according to the color of the light L ′. Design, this creation is not limited to this. It can be known from the above that when the included angle φ of the light L ′ entering the light collimation structure 106 is too large, the light L ′ may be regarded as stray light that affects fingerprint recognition (for example, the light L1 in FIG. 1, but is not limited thereto). In the embodiment, the light collimation structure 106 including the multilayer structure shown in FIG. 4 can effectively block stray light (for example, reduce the light intensity of the outgoing light L2 ′ generated after the stray light enters the light collimation structure 106) to reach the light. The sensor (ie, the light sensor 108 shown in FIG. 1), so the effect of fingerprint recognition can be effectively improved. It should be particularly noted that the light collimation structure 106 with a multilayer structure in this embodiment has a different architecture from a general optical collimator, and the cost is much lower than that of a general optical collimator, and the thickness is far. Thinner than normal cover lenses. This feature allows the light collimation structure 106 to be used in all embodiments of the present creation.

請參考第6圖和第7圖,第6圖為本創作第一實施例的另一變化實施例的光準直結構的剖視示意圖,第7圖為本創作第一實施例的另一變化實施例中當光線穿過光準直結構時入射角與出射光的強度的關係圖。如第6圖所示,不同於上述變化實施例,本變化實施例的光準直結構106的多層結構可包括第一金屬層M1、第四膜層F4和第二金屬層M2,且第四膜層F4設置於第一金屬層M1與第二金屬層M2之間。第一金屬層M1和第二金屬層M2可例如包括銀,第四膜層F4可例如包括氧化矽,但不以此為限。第一金屬層M1和第二金屬層M2的材料可相同或不同。第一金屬層M1和第二金屬層M2具有足夠薄的厚度,使得光線能穿透第一金屬層M1和第二金屬層M2。在一些實施例中,第一金屬層M1和第二金屬層M2的厚度可例如為25奈米,第四膜層F4的厚度可例如為300奈米,但並不以此為限。第6圖中光線L’、出射光L2’、夾角φ(即入射角)和第7圖中x軸、y軸的定義可類似第4圖和第5圖,故在此不再贅述。應用薄金屬薄膜共振腔原理,於本變化實施例,當光線L’通過第6圖所示的光準直結構106時,如第7圖所示,隨著夾角φ越大,光線L’通過光準直結構106之後的出射光L2’的強度可越小。舉例來說,當光線L’以夾角φ為0度的方式進入光準直結構106時,出射光L2’的光強度可最大,而當夾角φ的絕對值大於30度時(即,夾角φ≧30度或夾角φ≦-30度),出射光L2'的強度可降低至最大光強度的30%,其中最大光強度即為上述當夾角φ為0度時,出射光L2’的強度,但不以此為限。因此,本變化實施例中包括第6圖所示的多層結構的光準直結構106可有效的阻擋雜散光到達光感測器,並改善指紋辨識的效果。須注意的是,本變化實施例的光線L’的顏色可包括紅色、綠色、藍色或其他適合的顏色,且第6圖所示的光準直結構的多層結構的第一金屬層M1、第四膜層F4和第二金屬層M2的材料和厚度可根據光線L’的顏色進行設計,本創作並不以此為限。應特別注意的是,於另一實施例中,第四膜層F4可不限於一層,而可為具有不同厚度或透光率的多層結構。同樣地,本實施例中具有雙層薄金屬薄膜的光準直結構106與一般光準直器(collimator)之架構不同,且成本遠較一般光準直器(collimator)來得低廉,厚度則遠較一般覆蓋鏡片來得薄。此特性使得光準直結構106可被利用於本創作所有的實施例中。Please refer to FIG. 6 and FIG. 7. FIG. 6 is a schematic cross-sectional view of a light collimation structure according to another variation of the first embodiment of the creation, and FIG. 7 is another variation of the first embodiment of the creation. A diagram of the relationship between the incident angle and the intensity of the outgoing light when the light passes through the light collimation structure in the embodiment. As shown in FIG. 6, unlike the above-mentioned modified embodiment, the multilayer structure of the light collimation structure 106 of this modified embodiment may include a first metal layer M1, a fourth film layer F4, and a second metal layer M2, and the fourth The film layer F4 is disposed between the first metal layer M1 and the second metal layer M2. The first metal layer M1 and the second metal layer M2 may include, for example, silver, and the fourth film layer F4 may include, for example, silicon oxide, but is not limited thereto. The materials of the first metal layer M1 and the second metal layer M2 may be the same or different. The first metal layer M1 and the second metal layer M2 have a sufficiently thin thickness so that light can penetrate the first metal layer M1 and the second metal layer M2. In some embodiments, the thickness of the first metal layer M1 and the second metal layer M2 may be, for example, 25 nanometers, and the thickness of the fourth film layer F4 may be, for example, 300 nanometers, but is not limited thereto. The definition of the light ray L ', the outgoing light L2', the included angle φ (that is, the incident angle) in Fig. 6 and the x-axis and y-axis in Fig. 7 may be similar to those in Figs. Applying the principle of a thin metal thin film resonator, in this modified embodiment, when the light L ′ passes through the light collimation structure 106 shown in FIG. 6, as shown in FIG. 7, as the included angle φ is larger, the light L ′ passes The intensity of the emitted light L2 'after the light collimation structure 106 can be smaller. For example, when the light L 'enters the light collimation structure 106 with an included angle φ of 0 degrees, the light intensity of the outgoing light L2' may be the largest, and when the absolute value of the included angle φ is greater than 30 degrees (that is, the included angle φ ≧ 30 degrees or included angle φ ≦ -30 degrees), the intensity of the emitted light L2 'can be reduced to 30% of the maximum light intensity, where the maximum light intensity is the intensity of the emitted light L2' when the included angle φ is 0 degrees, But not limited to this. Therefore, the light collimating structure 106 including the multilayer structure shown in FIG. 6 in this modified embodiment can effectively block stray light from reaching the light sensor and improve the effect of fingerprint identification. It should be noted that the color of the light L ′ in this modified embodiment may include red, green, blue, or other suitable colors, and the first metal layer M1 of the multilayer structure of the light collimation structure shown in FIG. 6 The material and thickness of the fourth film layer F4 and the second metal layer M2 can be designed according to the color of the light L ′, and this creation is not limited thereto. It should be particularly noted that, in another embodiment, the fourth film layer F4 may not be limited to one layer, but may be a multilayer structure having different thicknesses or light transmittances. Similarly, the light collimation structure 106 with a double-layer thin metal film in this embodiment has a different structure from a general light collimator, and the cost is much lower than that of a general light collimator, and the thickness is far. Thinner than normal cover lenses. This feature allows the light collimation structure 106 to be used in all the embodiments of this creation.

請參考第8圖,第8圖為本創作第二實施例的顯示裝置的剖視示意圖。本實施例的顯示裝置200與第一實施例的主要差異在於本實施例的顯示裝置200的光感測器208並非設置在像素結構204的薄膜電晶體層210中。如第8圖所示,光感測器208和光準直結構206設置在像素結構204的液晶層212和第二基板216之間,更具體來說,光感測器208和光準直結構206設置在黑色矩陣BM與第三基板218之間,但不以此為限。像素結構204、光感測器208、光準直結構206、第二基板216可類似第一實施例,故在此不再贅述。根據本實施例,由於光感測器208和光準直結構206設置在黑色矩陣BM上,因此光感測器208和光準直結構206在方向D1上可與黑色矩陣BM重疊,如此可避免像素結構204的顯示區域受限於光感測器208和光準直結構206。在一些實施例中,光感測器208與光準直結構206在方向D1上也可位於第三基板218與彩色濾光層114之間,且在方向D1上不與黑色矩陣BM重疊,或者與黑色矩陣BM部分重疊,但不以此為限。光準直結構206在方向D1上可與光感測器208重疊,或是說光準直結構206在方向D1上可覆蓋光感測器208,因此本實施例中位於光感測器208上的光準直結構206可用來過濾偵測光L經由手指FG反射後角度較大的光線L1,使得光線L1無法到達光感測器208,進而改善指紋辨識的效果。再者,由於本實施例中光感測器208可設置在黑色矩陣BM上,因此可不需在光感測器208下方設置遮光層(例如第1圖所示的遮光層LS),但不以此為限。本實施例的光準直結構206可適用上述任一變化實施例的光準直結構,在此不多贅述。Please refer to FIG. 8, which is a schematic cross-sectional view of a display device according to a second embodiment of the present invention. The main difference between the display device 200 of this embodiment and the first embodiment is that the light sensor 208 of the display device 200 of this embodiment is not disposed in the thin film transistor layer 210 of the pixel structure 204. As shown in FIG. 8, the light sensor 208 and the light collimation structure 206 are disposed between the liquid crystal layer 212 and the second substrate 216 of the pixel structure 204. More specifically, the light sensor 208 and the light collimation structure 206 are disposed. Between the black matrix BM and the third substrate 218, but not limited thereto. The pixel structure 204, the light sensor 208, the light collimation structure 206, and the second substrate 216 may be similar to the first embodiment, and therefore will not be repeated here. According to this embodiment, since the light sensor 208 and the light collimation structure 206 are disposed on the black matrix BM, the light sensor 208 and the light collimation structure 206 can overlap the black matrix BM in the direction D1, so that a pixel structure can be avoided The display area of 204 is limited by the light sensor 208 and the light collimation structure 206. In some embodiments, the light sensor 208 and the light collimation structure 206 may also be located between the third substrate 218 and the color filter layer 114 in the direction D1 and do not overlap the black matrix BM in the direction D1, or It partially overlaps the black matrix BM, but not limited to this. The light collimation structure 206 may overlap the light sensor 208 in the direction D1, or the light collimation structure 206 may cover the light sensor 208 in the direction D1, so it is located on the light sensor 208 in this embodiment. The light collimation structure 206 can be used to filter the light L1 with a larger angle after the detection light L is reflected by the finger FG, so that the light L1 cannot reach the light sensor 208, thereby improving the fingerprint recognition effect. Furthermore, since the light sensor 208 can be disposed on the black matrix BM in this embodiment, it is not necessary to provide a light shielding layer (such as the light shielding layer LS shown in FIG. 1) under the light sensor 208, but it is not necessary to This is limited. The light collimation structure 206 of this embodiment can be applied to the light collimation structure of any of the above-mentioned variations, and details are not described herein again.

請參考第9圖,第9圖為本創作第三實施例的顯示裝置的剖視示意圖。本實施例的顯示裝置300與第一實施例的主要差異在於本實施例的顯示裝置300的光準直結構306並非設置在彩色濾光層114與第三基板118之間以及黑色矩陣BM與第三基板118之間。如第9圖所示,光準直結構306設置於光感測器308與液晶層312之間,也就是說,本實施例的光準直結構306設置在薄膜電晶體層310中。光感測器308在方向D1上不與黑色矩陣BM重疊,且光準直結構306在方向D1上可覆蓋光感測器308。在一些實施例中,光準直結構306在方向D1上可與黑色矩陣BM部分重疊或不與黑色矩陣BM重疊。因此,本實施例的光準直結構306可用來過濾偵測光L經由手指FG反射後角度較大的光線L1,使得光線L1雜散光無法到達光感測器308,進而改善指紋辨識的效果。本實施例的顯示裝置300的其他元件可參考第一實施例,故在此不再贅述。Please refer to FIG. 9, which is a schematic cross-sectional view of a display device according to a third embodiment of the present invention. The main difference between the display device 300 of this embodiment and the first embodiment is that the light collimation structure 306 of the display device 300 of this embodiment is not disposed between the color filter layer 114 and the third substrate 118 and the black matrix BM and the first Between three substrates 118. As shown in FIG. 9, the light collimation structure 306 is disposed between the light sensor 308 and the liquid crystal layer 312. That is, the light collimation structure 306 of this embodiment is disposed in the thin film transistor layer 310. The light sensor 308 does not overlap the black matrix BM in the direction D1, and the light collimation structure 306 can cover the light sensor 308 in the direction D1. In some embodiments, the light collimation structure 306 may partially overlap the black matrix BM in the direction D1 or not overlap the black matrix BM. Therefore, the light collimation structure 306 of this embodiment can be used to filter the light L1 with a larger angle after the detection light L is reflected by the finger FG, so that the stray light L1 cannot reach the light sensor 308, thereby improving the fingerprint recognition effect. For other elements of the display device 300 in this embodiment, reference may be made to the first embodiment, and details are not described herein again.

請參考第10圖,第10圖為本創作第四實施例的顯示裝置的剖視示意圖。本創作第四實施例的顯示裝置與第一實施例主要的差異在於本實施例的顯示裝置400為自發光顯示裝置。本實施例的顯示裝置400的其他元件可與第一實施例中的相同,故在此不再贅述。須注意的是,由於顯示裝置400的像素結構404包括發光元件LU,因此顯示裝置400可不需設置背光模組,但並不以此為限。本實施例的每個像素結構404可包括一發光元件LU,此外,像素結構404還可包括薄膜電晶體TFT以驅動發光元件LU。根據本實施例,光感測器408與發光元件LU設置於第一基板402的同一表面上。具體來說,本實施例的光感測器408和發光元件LU設置在第一基板402的表面402S上,且光感測器408與發光元件LU在方向D1上不重疊,但不以此為限。舉例來說,光感測器408與薄膜電晶體TFT可由同一薄膜電晶體層所形成。光準直結構406可設置於第二基板416與光感測器408之間。根據本實施例,光準直結構406可直接形成設置在光感測器408上,但不限於此。Please refer to FIG. 10, which is a schematic cross-sectional view of a display device according to a fourth embodiment of the present invention. The main difference between the display device of this fourth embodiment and the first embodiment is that the display device 400 of this embodiment is a self-luminous display device. The other elements of the display device 400 in this embodiment may be the same as those in the first embodiment, so they are not repeated here. It should be noted that, because the pixel structure 404 of the display device 400 includes a light emitting element LU, the display device 400 may not need to be provided with a backlight module, but it is not limited thereto. Each pixel structure 404 in this embodiment may include a light emitting element LU. In addition, the pixel structure 404 may further include a thin film transistor TFT to drive the light emitting element LU. According to the present embodiment, the light sensor 408 and the light emitting element LU are disposed on the same surface of the first substrate 402. Specifically, the light sensor 408 and the light emitting element LU of this embodiment are disposed on the surface 402S of the first substrate 402, and the light sensor 408 and the light emitting element LU do not overlap in the direction D1, but this is not the case. limit. For example, the photo sensor 408 and the thin film transistor TFT may be formed from the same thin film transistor layer. The light collimation structure 406 may be disposed between the second substrate 416 and the light sensor 408. According to this embodiment, the light collimation structure 406 may be directly formed and disposed on the light sensor 408, but is not limited thereto.

請參考第11圖,其為本創作第四實施例的一變化實施例的顯示裝置的剖視示意圖。如第11圖所示,在本變化實施例中,光準直結構406可形成在封裝玻璃EG的表面上,因此光準直結構406可不與光感測器408接觸。再者,本實施例中的光準直結構406在方向D1上可不與發光元件LU重疊,但不以此為限。本實施例的顯示裝置400的其他元件可與第一實施例中的相同,故在此不再贅述。須注意的是,由於顯示裝置400的像素結構404包括發光元件LU,因此顯示裝置400可不需設置背光模組,但並不以此為限。此外,第10圖和第11圖所示的顯示裝置400還可包括設置在第二基板416與封裝玻璃EG之間的觸控元件TP,但不以此為限。Please refer to FIG. 11, which is a schematic cross-sectional view of a display device according to a modified embodiment of the fourth embodiment of the present invention. As shown in FIG. 11, in this modified embodiment, the light collimation structure 406 may be formed on the surface of the packaging glass EG, so the light collimation structure 406 may not be in contact with the light sensor 408. Furthermore, the light collimation structure 406 in this embodiment may not overlap the light emitting element LU in the direction D1, but it is not limited thereto. The other elements of the display device 400 in this embodiment may be the same as those in the first embodiment, so they are not repeated here. It should be noted that, because the pixel structure 404 of the display device 400 includes a light emitting element LU, the display device 400 may not need to be provided with a backlight module, but it is not limited thereto. In addition, the display device 400 shown in FIGS. 10 and 11 may further include a touch element TP disposed between the second substrate 416 and the packaging glass EG, but is not limited thereto.

請參考第12圖和第13圖,第12圖為本創作第五實施例的顯示裝置的剖視示意圖,第13圖為本創作第五實施例的一變化實施例的顯示裝置的剖視示意圖。為了簡化圖式,第12圖和第13圖省略了第二基板、偏光片以及黏著層。本創作第五實施例與第四實施例主要的差異在於本實施例的顯示裝置500的光感測器508並非與發光元件LU設置於同一表面。根據本實施例,顯示裝置500的像素結構504包括發光元件LU,且第一基板502設置於光感測器508與發光元件LU之間,也就是說,本實施例的光感測器508與發光元件LU位於第一基板502的不同表面上。詳細來說,光感測器508位於第一基板502的表面502S1上,而發光元件LU位於第一基板502的表面502S2上,但不以此為限。根據本實施例,光準直結構506位於光感測器508與第一基板502之間,其中,如第12圖所示,光準直結構506可直接形成於第一基板502面對光感測器508的表面上,也就是說,光準直結構506可設置在第一基板502的表面502S1上,然後可將光感測器508設置在光準直結構506上,但本創作不以此為限。應特別注意的是,光感測器508與光準直結構506可具有相同的面積,光感測器508也可略小於光準直結構506的面積,以達較佳的過濾雜散光效果。Please refer to FIG. 12 and FIG. 13. FIG. 12 is a schematic cross-sectional view of a display device according to a fifth embodiment of the creation, and FIG. 13 is a cross-sectional schematic view of a display device according to a modified embodiment of the fifth embodiment of the creation. . In order to simplify the drawings, FIGS. 12 and 13 omit the second substrate, the polarizer, and the adhesive layer. The main difference between this fifth embodiment and the fourth embodiment is that the light sensor 508 of the display device 500 of this embodiment is not disposed on the same surface as the light emitting element LU. According to this embodiment, the pixel structure 504 of the display device 500 includes a light emitting element LU, and the first substrate 502 is disposed between the light sensor 508 and the light emitting element LU, that is, the light sensor 508 and The light emitting elements LU are located on different surfaces of the first substrate 502. In detail, the light sensor 508 is located on the surface 502S1 of the first substrate 502, and the light-emitting element LU is located on the surface 502S2 of the first substrate 502, but it is not limited thereto. According to this embodiment, the light collimation structure 506 is located between the light sensor 508 and the first substrate 502. As shown in FIG. 12, the light collimation structure 506 can be directly formed on the first substrate 502 to face the light sensor. The surface of the sensor 508, that is, the light collimation structure 506 may be disposed on the surface 502S1 of the first substrate 502, and then the light sensor 508 may be disposed on the light collimation structure 506. This is limited. It should be particularly noted that the light sensor 508 and the light collimation structure 506 may have the same area, and the light sensor 508 may also be slightly smaller than the area of the light collimation structure 506 to achieve a better stray light filtering effect.

在第13圖所示的變化實施例中,光準直結構506也可直接先設置在光感測器508上,接著再將光準直結構506和光感測器508的複合結構設置在第一基板502的表面502S1上,但不以此為限。與前述的實施例相同,由於本實施例的光準直結構506在方向D1上與光感測器508重疊,因此在光線進入光感測器508之前,可藉由光準直結構506過濾掉雜散光,並改善指紋辨識的效果。此外,顯示結構500的其他元件與第四實施例的相同,故在此不再贅述。In the modified embodiment shown in FIG. 13, the light collimation structure 506 may also be directly disposed on the light sensor 508, and then the composite structure of the light collimation structure 506 and the light sensor 508 may be disposed on the first The surface 502S1 of the substrate 502 is not limited thereto. Similar to the previous embodiment, since the light collimation structure 506 of this embodiment overlaps the light sensor 508 in the direction D1, the light can be filtered by the light collimation structure 506 before the light enters the light sensor 508. Stray light and improve the effect of fingerprint recognition. In addition, the other elements of the display structure 500 are the same as those of the fourth embodiment, so they are not repeated here.

請參考第14圖,第14圖為本創作第六實施例的顯示裝置的剖視示意圖。為了簡化圖式,第14圖中省略了第二基板、偏光片、和黏著層。此外,第14圖中的第一基板602、遮光層LS和第三基板618可與第一實施例的相同,故在此不再贅述。如第14圖所示,顯示裝置600的光準直結構606的多層結構包括第一彩色濾光層6061、第二彩色濾光層6062和第三彩色濾光層6063。在本實施例中,第一彩色濾光層6061、第二彩色濾光層6062和第三彩色濾光層6063可由上而下依序堆疊,但不限於此。第一彩色濾光層6061、第二彩色濾光層6062和第三彩色濾光層6063可用來吸收不同的顏色,使得任何顏色的光線通過第一彩色濾光層6061、第二彩色濾光層6062和第三彩色濾光層6063可完全被吸收。舉例來說,第一彩色濾光層6061的顏色可為紅色、綠色或藍色的其中一個,第二彩色濾光層6062可為紅色、綠色或藍色的另外一個,而第三彩色濾光層6063可為紅色、綠色或藍色的再另一個,且第一彩色濾光層6061、第二彩色濾光層6062和第三彩色濾光層6063的堆疊順序可任意調換。例如,第一彩色濾光層6061可為紅色,第二彩色濾光層6062可為綠色,而第三彩色濾光層6063可為藍色,或者,第一彩色濾光層6061可為紅色,第二彩色濾光層6062可為藍色,而第三彩色濾光層6063可為綠色,本創作並不以此為限。舉例來說,第一彩色濾光層6061可與第一彩色濾光片114a同時形成,第二彩色濾光層6062可與第二彩色濾光片114b同時形成,第三彩色濾光層6063可與第三彩色濾光片114c同時形成,但不限於此。因此,當入射角過大的雜散光(例如第14圖所示的光線L’)欲進入光感測器608時,光線L'會先經過光準直結構606中的第一彩色濾光層6061、第二彩色濾光層6062和第三彩色濾光層6063,進而全部被吸收並過濾。如此一來,入射角過大的光線L’在到達光感測器608之前可被濾掉,藉此改善光感測器608用於指紋辨識的效果。為確保入射角過大的光線L’在到達光感測器608之前可被完全濾掉,光準直結構606可包含不只三層彩色濾光層;也就是說,光準直結構606可包含不只一組三層不同色的彩色濾光層,也可不以一組三層為單位,例如包括四層彩色濾光層。Please refer to FIG. 14, which is a schematic cross-sectional view of a display device according to a sixth embodiment of the present invention. In order to simplify the drawing, the second substrate, the polarizer, and the adhesive layer are omitted in FIG. 14. In addition, the first substrate 602, the light-shielding layer LS, and the third substrate 618 in FIG. 14 may be the same as those in the first embodiment, and therefore are not described herein again. As shown in FIG. 14, the multilayer structure of the light collimation structure 606 of the display device 600 includes a first color filter layer 6061, a second color filter layer 6062, and a third color filter layer 6063. In this embodiment, the first color filter layer 6061, the second color filter layer 6062, and the third color filter layer 6063 can be sequentially stacked from top to bottom, but it is not limited thereto. The first color filter layer 6061, the second color filter layer 6062, and the third color filter layer 6063 can be used to absorb different colors, so that light of any color passes through the first color filter layer 6061, the second color filter layer 6062 and the third color filter layer 6063 can be completely absorbed. For example, the color of the first color filter layer 6061 may be one of red, green, or blue, the second color filter layer 6062 may be the other of red, green, or blue, and the third color filter The layer 6063 may be another one of red, green, or blue, and the stacking order of the first color filter layer 6061, the second color filter layer 6062, and the third color filter layer 6063 may be arbitrarily changed. For example, the first color filter layer 6061 may be red, the second color filter layer 6062 may be green, and the third color filter layer 6063 may be blue, or the first color filter layer 6061 may be red, The second color filter layer 6062 may be blue, and the third color filter layer 6063 may be green. This creation is not limited to this. For example, the first color filter layer 6061 may be formed at the same time as the first color filter 114a, the second color filter layer 6062 may be formed at the same time as the second color filter 114b, and the third color filter layer 6063 may be formed at the same time. It is formed at the same time as the third color filter 114c, but is not limited thereto. Therefore, when stray light with an excessively large incident angle (such as the light L ′ shown in FIG. 14) is intended to enter the light sensor 608, the light L ′ will first pass through the first color filter layer 6061 in the light collimation structure 606. The second color filter layer 6062 and the third color filter layer 6063 are all absorbed and filtered. In this way, the light L 'having an excessive incident angle can be filtered out before reaching the light sensor 608, thereby improving the effect of the light sensor 608 for fingerprint recognition. In order to ensure that the light L 'having an excessively large incident angle can be completely filtered out before reaching the light sensor 608, the light collimation structure 606 may include more than three color filter layers; that is, the light collimation structure 606 may include more than A group of three layers of different color filter layers may not be based on a group of three layers, for example, it includes four layers of color filter layers.

請參考第15圖,第15圖為本創作第六實施例的一變化實施例的像素結構的俯視示意圖。如第15圖所示,光準直結構606(即多層結構)在方向D1上可至少位於光感測器608的相對兩側。在本變化實施例中,光準直結構606可為環形結構,且在方向D1上圍繞光感測器608,但不以此為限。舉例來說,光準直結構606可具有一開口606a,對應由黑色矩陣BM定義的一開口OP。本實施例的開口606a在方向D1上的大小可約略相同於或大於光感測器608在方向D1上的面積,並小於由黑色矩陣BM定義的開口OP的大小。此外,光準直結構606在方向D1上可與黑色矩陣BM至少部分重疊,且部分的光準直結構606與光感測器608在方向D1上可設置在開口OP中,但不以此為限。在一些實施例中,開口606a的大小也可約略相同於由黑色矩陣BM定義的開口OP的大小。如此一來,光線L’在到達光感測器608之前可被全部吸收,藉此改善光感測器608用於指紋辨識的效果。在一些實施例中,光準直結構606也可完全與黑色矩陣BM重疊,使得光準直結構606的開口606a對應由黑色矩陣BM定義的開口OP。Please refer to FIG. 15. FIG. 15 is a schematic top view of a pixel structure of a modified embodiment of the sixth embodiment of the present invention. As shown in FIG. 15, the light collimation structure 606 (ie, the multilayer structure) may be located at least on two opposite sides of the light sensor 608 in the direction D1. In this modified embodiment, the light collimation structure 606 may be a ring structure and surround the light sensor 608 in the direction D1, but it is not limited thereto. For example, the light collimation structure 606 may have an opening 606a corresponding to an opening OP defined by the black matrix BM. The size of the opening 606a in the direction D1 in this embodiment may be approximately the same as or larger than the area of the light sensor 608 in the direction D1, and smaller than the size of the opening OP defined by the black matrix BM. In addition, the light collimation structure 606 may at least partially overlap the black matrix BM in the direction D1, and part of the light collimation structure 606 and the light sensor 608 may be disposed in the opening OP in the direction D1, but this is not the case. limit. In some embodiments, the size of the opening 606a may also be approximately the same as the size of the opening OP defined by the black matrix BM. In this way, the light L 'can be completely absorbed before reaching the light sensor 608, thereby improving the effect of the light sensor 608 for fingerprint recognition. In some embodiments, the light collimation structure 606 may also completely overlap the black matrix BM, so that the opening 606a of the light collimation structure 606 corresponds to the opening OP defined by the black matrix BM.

請參考第16圖和第17圖,第16圖為本創作第六實施例的又一變化實施例的像素結構的俯視示意圖,第17圖為本創作第六實施例的再一變化實施例的像素結構的俯視示意圖。如第16圖所示,在方向D1上,光準直結構606除了圍繞光感測器608之外,還可例如延伸穿過光感測器608。舉例來說,光準直結構606可包括環狀部620以及橫跨部622,其中環狀部圍繞光感測器608,且橫跨部可與光感測器608重疊。Please refer to FIG. 16 and FIG. 17. FIG. 16 is a schematic top view of a pixel structure of still another modified embodiment of the sixth embodiment of the present invention, and FIG. 17 is a diagram of another modified embodiment of the sixth embodiment of the author. Top view of a pixel structure. As shown in FIG. 16, in the direction D1, in addition to surrounding the light sensor 608, the light collimating structure 606 can also extend through the light sensor 608, for example. For example, the light collimation structure 606 may include a ring portion 620 and a cross portion 622, wherein the ring portion surrounds the light sensor 608, and the cross portion may overlap the light sensor 608.

此外,如第17圖所示,在方向D1上,光準直結構606亦可位於光感測器608的兩側,而不圍繞光感測器608。須注意的是,上述變化實施例僅為示例性的,本創作並不以此為限。只要光準直結構606具有過濾掉雜散光的效果,其在方向D1上可以任意方式設置在光感測器608的周圍。In addition, as shown in FIG. 17, in the direction D1, the light collimation structure 606 may also be located on both sides of the light sensor 608 without surrounding the light sensor 608. It should be noted that the above-mentioned modified embodiments are merely exemplary, and the present invention is not limited thereto. As long as the light collimation structure 606 has the effect of filtering out stray light, it can be arranged around the light sensor 608 in any direction in the direction D1.

請參考第18圖,第18圖為本創作第七實施例的顯示裝置的剖視示意圖。本創作第七實施例與第六實施例主要的差異在於本實施例的顯示裝置700還包括光阻結構PR。顯示裝置700中除了光阻結構PR外的元件可與第六實施例中的相同,故在此不再贅述。根據本實施例,光阻結構PR可設置在第三基板718和光準直結構706(多層結構)之間。在本實施例中,光阻結構PR可例如包括低折射率的材料,使得光阻結構PR的折射率可小於第三基板718的折射率。根據本實施例,由於光阻結構PR設置於光準直結構706與第三基板718之間,因此當光線L3’從第三基板718朝向光感測器708行進時,光線L3’可因光阻結構PR與第三基板718之間的介面產生發散偏折而更容易進入光準直結構706中的第一彩色濾光層7061、第二彩色濾光層7062和第三彩色濾光層7063,進而全部被吸收並過濾。如此一來,光線L3’在到達光感測器708之前可被濾掉,藉此改善光感測器708用於指紋辨識的效果。Please refer to FIG. 18, which is a schematic cross-sectional view of a display device according to a seventh embodiment of the present invention. The main difference between this seventh embodiment and the sixth embodiment is that the display device 700 of this embodiment further includes a photoresist structure PR. The elements in the display device 700 other than the photoresist structure PR may be the same as those in the sixth embodiment, and therefore will not be repeated here. According to the present embodiment, the photoresist structure PR may be disposed between the third substrate 718 and the light collimation structure 706 (multilayer structure). In this embodiment, the photoresist structure PR may include, for example, a material with a low refractive index, so that the refractive index of the photoresist structure PR may be smaller than the refractive index of the third substrate 718. According to this embodiment, since the photoresist structure PR is disposed between the light collimation structure 706 and the third substrate 718, when the light L3 ′ travels from the third substrate 718 toward the light sensor 708, the light L3 ′ may be caused by light. The interface between the resist structure PR and the third substrate 718 generates divergent deflections and more easily enters the first color filter layer 7061, the second color filter layer 7062, and the third color filter layer 7063 in the light collimation structure 706. , And then all are absorbed and filtered. In this way, the light L3 'can be filtered out before reaching the light sensor 708, thereby improving the effect of the light sensor 708 for fingerprint recognition.

綜上所述,本創作提供了一種顯示裝置,該顯示裝置包括了位於光感測器上方的光準直結構。光準直結構可包括多層結構,且多層結構可例如由複數個第一膜層和第二膜層交替堆疊(還可包括第三膜層)所形成、由第一金屬層、第四膜層和第二金屬層依序堆疊所形成或由第一彩色濾光層、第二彩色濾光層和第三彩色濾光層依序堆疊所形成。本創作的光準直結構可將具有較大入射角的雜散光在被光感測器接收之前過濾掉,藉此改善指紋辨識的效果。In summary, the present invention provides a display device that includes a light collimation structure above a light sensor. The light collimation structure may include a multilayer structure, and the multilayer structure may be formed by, for example, alternately stacking a plurality of first film layers and a second film layer (which may also include a third film layer), a first metal layer, a fourth film layer It is formed by sequentially stacking with the second metal layer or by sequentially stacking the first color filter layer, the second color filter layer, and the third color filter layer. The original light collimation structure can filter stray light with a larger incident angle before being received by the light sensor, thereby improving the effect of fingerprint recognition.

100、200、300、400、500、600、700‧‧‧顯示裝置100, 200, 300, 400, 500, 600, 700‧‧‧ display devices

102、402、502、602‧‧‧第一基板 102, 402, 502, 602‧‧‧ first substrate

104、204、404、504、604‧‧‧像素結構 104, 204, 404, 504, 604‧‧‧ pixel structure

106、206、306、406、506、606、706‧‧‧光準直結構 106, 206, 306, 406, 506, 606, 706‧‧‧light collimation structure

106a‧‧‧上表面 106a‧‧‧upper surface

108、208、308、408、508、608、708‧‧‧光感測器 108, 208, 308, 408, 508, 608, 708‧‧‧ light sensors

109‧‧‧指紋辨識晶片 109‧‧‧Fingerprint identification chip

110、210、310‧‧‧薄膜電晶體層 110, 210, 310‧‧‧ thin film transistor layers

112、212、312‧‧‧液晶層 112, 212, 312‧‧‧ liquid crystal layer

114‧‧‧彩色濾光層 114‧‧‧color filter

114a、114b、114c‧‧‧彩色濾光片 114a, 114b, 114c‧‧‧ color filters

116、216、416‧‧‧第二基板 116, 216, 416‧‧‧Second substrate

118、218、618、718‧‧‧第三基板 118, 218, 618, 718‧‧‧ Third substrate

402S、502S1、502S2‧‧‧表面 402S, 502S1, 502S2‧‧‧ surface

6061、7061‧‧‧第一彩色濾光層 6061, 7061‧‧‧‧The first color filter layer

6062、7062‧‧‧第二彩色濾光層 6062, 7062‧‧‧‧Second color filter layer

6063、7063‧‧‧第三彩色濾光層 6063, 7063‧‧‧‧th third color filter layer

620‧‧‧環狀部 620‧‧‧Ring

622‧‧‧橫跨部 622‧‧‧Across

BL‧‧‧背光模組 BL‧‧‧ backlight module

BM‧‧‧黑色矩陣 BM‧‧‧Black Matrix

D1‧‧‧方向 D1‧‧‧ direction

DE‧‧‧像素電極 DE‧‧‧pixel electrode

DR‧‧‧顯示區域 DR‧‧‧Display Area

EG‧‧‧封裝玻璃 EG‧‧‧Packaging glass

F1‧‧‧第一膜層 F1‧‧‧The first film layer

F2‧‧‧第二膜層 F2‧‧‧Second film layer

F3‧‧‧第三膜層 F3‧‧‧ third film

F4‧‧‧第四膜層 F4‧‧‧Fourth film layer

FG‧‧‧手指 FG‧‧‧finger

FL‧‧‧法線 FL‧‧‧ Normal

L‧‧‧偵測光 L‧‧‧detection light

L1、L2、L3、L’、L3’‧‧‧光線 L1, L2, L3, L ’, L3’‧‧‧ Light

L2’‧‧‧出射光 L2’‧‧‧ exit light

LS‧‧‧遮光層 LS‧‧‧Light-shielding layer

LU‧‧‧發光元件 LU‧‧‧Light-emitting element

M1‧‧‧第一金屬層 M1‧‧‧First metal layer

M2‧‧‧第二金屬層 M2‧‧‧Second metal layer

PR‧‧‧光阻結構 PR‧‧‧Photoresistive structure

TFT‧‧‧薄膜電晶體 TFT‧‧‧ thin film transistor

TP‧‧‧觸控元件 TP‧‧‧touch element

OP、606a‧‧‧開口 OP, 606a‧‧‧ opening

φ‧‧‧夾角 φ‧‧‧ angle

第1圖為本創作第一實施例的顯示裝置的剖視示意圖。
第2圖為本創作第一實施例的顯示裝置的部分功能方塊示意圖。
第3圖為本創作第一實施例的像素結構的俯視示意圖。
第4圖為本創作第一實施例的一變化實施例的光準直結構的剖視示意圖。
第5圖為本創作第一實施例的一變化實施例中當光線穿過光準直結構時入射角與出射光的強度的關係圖。
第6圖為本創作第一實施例的另一變化實施例的光準直結構的剖視示意圖。
第7圖為本創作第一實施例的另一變化實施例中當光線穿過光準直結構時入射角與出射光的強度的關係圖。
第8圖為本創作第二實施例的顯示裝置的剖視示意圖。
第9圖為本創作第三實施例的顯示裝置的剖視示意圖。
第10圖為本創作第四實施例的顯示裝置的剖視示意圖。
第11圖為本創作第四實施例的一變化實施例的顯示裝置的剖視示意圖。
第12圖為本創作第五實施例的顯示裝置的剖視示意圖。
第13圖為本創作第五實施例的一變化實施例的顯示裝置的剖視示意圖。
第14圖為本創作第六實施例的顯示裝置的剖視示意圖。
第15圖為本創作第六實施例的一變化實施例的像素結構的俯視示意圖。
第16圖為本創作第六實施例的又一變化實施例的像素結構的俯視示意圖。
第17圖為本創作第六實施例的再一變化實施例的像素結構的俯視示意圖。
第18圖為本創作第七實施例的顯示裝置的剖視示意圖。
FIG. 1 is a schematic cross-sectional view of a display device according to a first embodiment of the present invention.
FIG. 2 is a functional block diagram of the display device according to the first embodiment of the present invention.
FIG. 3 is a schematic top view of the pixel structure of the first embodiment of the creation.
FIG. 4 is a schematic cross-sectional view of a light collimation structure according to a modified embodiment of the first embodiment of the invention.
FIG. 5 is a relationship diagram between the incident angle and the intensity of the emitted light when the light passes through the light collimating structure in a modified embodiment of the first embodiment of the creation.
FIG. 6 is a schematic cross-sectional view of a light collimation structure according to another modified embodiment of the first embodiment of the invention.
FIG. 7 is a relationship diagram between the incident angle and the intensity of the outgoing light when the light passes through the light collimating structure in another modified embodiment of the first embodiment of the creation.
FIG. 8 is a schematic cross-sectional view of a display device according to a second embodiment of the present invention.
FIG. 9 is a schematic cross-sectional view of a display device according to a third embodiment of the present invention.
FIG. 10 is a schematic cross-sectional view of a display device according to a fourth embodiment of the present invention.
FIG. 11 is a schematic cross-sectional view of a display device according to a modified embodiment of the fourth embodiment.
FIG. 12 is a schematic cross-sectional view of a display device according to a fifth embodiment of the present invention.
FIG. 13 is a schematic cross-sectional view of a display device according to a modified embodiment of the fifth embodiment.
FIG. 14 is a schematic cross-sectional view of a display device according to a sixth embodiment of the present invention.
FIG. 15 is a schematic top view of a pixel structure of a modified embodiment of the sixth embodiment of the invention.
FIG. 16 is a schematic top view of a pixel structure according to another variation of the sixth embodiment of the present invention.
FIG. 17 is a schematic top view of a pixel structure of still another modified embodiment of the sixth embodiment of the invention.
FIG. 18 is a schematic cross-sectional view of a display device according to a seventh embodiment of the present invention.

Claims (19)

一種具有像素結構的顯示裝置,用以偵測一手指的指紋,該顯示裝置包括:
一第一基板;
一光感測器,設置在該第一基板上;以及
一光準直結構,對應該光感測器,且設置在該光感測器與該手指之間;
其中,該光準直結構包括一多層結構,用以過濾由該手指反射的一反射光。
A display device with a pixel structure is used to detect a fingerprint of a finger. The display device includes:
A first substrate
A light sensor disposed on the first substrate; and a light collimation structure corresponding to the light sensor and disposed between the light sensor and the finger;
Wherein, the light collimation structure includes a multilayer structure for filtering a reflected light reflected by the finger.
如請求項1所述的顯示裝置,其中在一垂直方向上,該光準直結構與該光感測器重疊,該多層結構包括複數層第一膜層和複數層第二膜層,各該第一膜層與各該第二膜層交替堆疊,且各該第一膜層和各該第二膜層具有不同的折射率。The display device according to claim 1, wherein the light collimation structure overlaps the light sensor in a vertical direction, and the multilayer structure includes a plurality of first film layers and a plurality of second film layers, each of which The first film layer and each of the second film layers are alternately stacked, and each of the first film layer and each of the second film layers have different refractive indexes. 如請求項1所述的顯示裝置,其中在一垂直方向上,該光準直結構與該光感測器重疊,該多層結構包括一第一金屬層、一第三膜層和一第二金屬層,且該第三膜層設置於該第一金屬層與該第二金屬層之間。The display device according to claim 1, wherein the light collimation structure overlaps the light sensor in a vertical direction, and the multilayer structure includes a first metal layer, a third film layer, and a second metal Layer, and the third film layer is disposed between the first metal layer and the second metal layer. 如請求項1所述的顯示裝置,另包括一第二基板,與該第一基板相對設置,其中像素結構包括一薄膜電晶體層、一液晶層以及一彩色濾光層,該薄膜電晶體層設置於該液晶層與該第一基板之間,該彩色濾光層設置於該液晶層與該第二基板之間,且該光感測器位於該薄膜電晶體層中。The display device according to claim 1, further comprising a second substrate opposite to the first substrate, wherein the pixel structure includes a thin film transistor layer, a liquid crystal layer, and a color filter layer, the thin film transistor layer The color filter layer is disposed between the liquid crystal layer and the first substrate, the color filter layer is disposed between the liquid crystal layer and the second substrate, and the light sensor is located in the thin film transistor layer. 如請求項4所述的顯示裝置,其中該光準直結構設置於該光感測器與該液晶層之間。The display device according to claim 4, wherein the light collimation structure is disposed between the light sensor and the liquid crystal layer. 如請求項4所述的顯示裝置,其中該光準直結構設置於該液晶層與該第二基板之間。The display device according to claim 4, wherein the light collimation structure is disposed between the liquid crystal layer and the second substrate. 如請求項1所述的顯示裝置,另包括一第二基板,與該第一基板相對設置,其中像素結構包括一薄膜電晶體層、一液晶層以及一彩色濾光層,該薄膜電晶體層設置於該液晶層與該第一基板之間,該彩色濾光層設置於該液晶層與該第二基板之間,且該光感測器與該光準直結構位於該液晶層與該第二基板之間。The display device according to claim 1, further comprising a second substrate opposite to the first substrate, wherein the pixel structure includes a thin film transistor layer, a liquid crystal layer, and a color filter layer, the thin film transistor layer The color filter layer is disposed between the liquid crystal layer and the first substrate, the color filter layer is disposed between the liquid crystal layer and the second substrate, and the light sensor and the light collimation structure are disposed between the liquid crystal layer and the first substrate. Between two substrates. 如請求項1所述的顯示裝置,其中該像素結構包括一發光元件,且該光感測器與該發光元件設置於該第一基板的同一表面上。The display device according to claim 1, wherein the pixel structure includes a light emitting element, and the light sensor and the light emitting element are disposed on a same surface of the first substrate. 如請求項1所述的顯示裝置,其中該像素結構包括一發光元件,且該第一基板設置於該光感測器與該發光元件之間。The display device according to claim 1, wherein the pixel structure includes a light emitting element, and the first substrate is disposed between the light sensor and the light emitting element. 如請求項9所述的顯示裝置,其中該光準直結構直接形成於該第一基板面對該光感測器的表面上。The display device according to claim 9, wherein the light collimation structure is directly formed on a surface of the first substrate facing the light sensor. 如請求項9所述的顯示裝置,其中該光準直結構直接形成於該光感測器上。The display device according to claim 9, wherein the light collimation structure is directly formed on the light sensor. 如請求項1所述的顯示裝置,其中在一垂直方向上,該多層結構至少位於該光感測器的相對兩側,該多層結構包括一第一彩色濾光層、一第二彩色濾光層和一第三彩色濾光層,且該第一彩色濾光層、該第二彩色濾光層和該第三彩色濾光層依序堆疊。The display device according to claim 1, wherein in a vertical direction, the multilayer structure is located at least on opposite sides of the light sensor, and the multilayer structure includes a first color filter layer and a second color filter Layer and a third color filter layer, and the first color filter layer, the second color filter layer and the third color filter layer are sequentially stacked. 如請求項12所述的顯示裝置,其中該第一彩色濾光層、該第二彩色濾光層和該第三彩色濾光層用以吸收不同的顏色。The display device according to claim 12, wherein the first color filter layer, the second color filter layer, and the third color filter layer are used to absorb different colors. 如請求項12所述的顯示裝置,其中在該垂直方向上,該多層結構至少圍繞該光感測器。The display device according to claim 12, wherein the multilayer structure surrounds at least the light sensor in the vertical direction. 如請求項13所述的顯示裝置,另包括一光阻結構和一第二基板,其中該光阻結構設置在該多層結構和該第二基板上,且該光阻結構的折射率小於該第二基板的折射率。The display device according to claim 13, further comprising a photoresist structure and a second substrate, wherein the photoresist structure is disposed on the multilayer structure and the second substrate, and a refractive index of the photoresist structure is less than the first The refractive index of the two substrates. 一種指紋辨識晶片,用於在一顯示裝置中偵測一手指的指紋,該顯示裝置包括一光感測器以及一光準直結構,該光準直結構設置在該光感測器與該手指之間;
其中,該光準直結構包括一多層結構,用以過濾由該手指反射的一反射光;其中,該指紋辨識晶片電連接於該光感測器,利用該過濾後的反射光繪製一指紋圖樣,與一已知指紋圖樣比對,以達到辨識功能。
A fingerprint recognition chip is used to detect a fingerprint of a finger in a display device. The display device includes a light sensor and a light collimation structure. The light collimation structure is disposed on the light sensor and the finger. between;
Wherein, the light collimation structure includes a multilayer structure for filtering a reflected light reflected by the finger; wherein the fingerprint recognition chip is electrically connected to the light sensor, and a fingerprint is drawn using the filtered reflected light The pattern is compared with a known fingerprint pattern to achieve the identification function.
如請求項16所述的指紋辨識晶片,其中在一垂直方向上,該光準直結構與該光感測器重疊,該多層結構包括複數層第一膜層和複數層第二膜層,各該第一膜層與各該第二膜層交替堆疊,且各該第一膜層和各該第二膜層具有不同的折射率。The fingerprint recognition chip according to claim 16, wherein the light collimation structure overlaps the light sensor in a vertical direction, and the multilayer structure includes a plurality of first film layers and a plurality of second film layers, each The first film layer and each of the second film layers are alternately stacked, and each of the first film layer and each of the second film layers have different refractive indexes. 如請求項16所述的指紋辨識晶片,其中在一垂直方向上,該光準直結構與該光感測器重疊,該多層結構包括一第一金屬層、一第三膜層和一第二金屬層,且該第三膜層設置於該第一金屬層與該第二金屬層之間。The fingerprint identification chip according to claim 16, wherein the light collimation structure overlaps the light sensor in a vertical direction, and the multilayer structure includes a first metal layer, a third film layer, and a second A metal layer, and the third film layer is disposed between the first metal layer and the second metal layer. 如請求項16所述的指紋辨識晶片,其中在一垂直方向上,該多層結構至少位於該光感測器的相對兩側,該多層結構包括一第一彩色濾光層、一第二彩色濾光層和一第三彩色濾光層,且該第一彩色濾光層、該第二彩色濾光層和該第三彩色濾光層依序堆疊。The fingerprint identification chip according to claim 16, wherein the multilayer structure is located at least on opposite sides of the light sensor in a vertical direction, and the multilayer structure includes a first color filter layer and a second color filter A light layer and a third color filter layer, and the first color filter layer, the second color filter layer and the third color filter layer are sequentially stacked.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI723876B (en) * 2020-05-08 2021-04-01 大陸商深圳天德鈺科技股份有限公司 Display device
TWI756097B (en) * 2020-08-17 2022-02-21 友達光電股份有限公司 Fingerprint sensing module
TWI803870B (en) * 2020-05-11 2023-06-01 大陸商上海耕岩智能科技有限公司 Fingerprint imaging device and fingerprint imaging method

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM587775U (en) * 2019-07-07 2019-12-11 奕力科技股份有限公司 Display device having pixel structure and fingerprint identification chip
TWI710827B (en) * 2019-12-04 2020-11-21 友達光電股份有限公司 Display apparatus
CN111061089B (en) 2019-12-13 2021-04-27 武汉华星光电技术有限公司 Display device
CN113536872B (en) * 2020-04-22 2023-10-13 群创光电股份有限公司 Fingerprint identification module and fingerprint identification device
CN111552108B (en) * 2020-06-08 2022-11-25 京东方科技集团股份有限公司 Display device and fingerprint identification method thereof
CN111552109A (en) * 2020-06-09 2020-08-18 京东方科技集团股份有限公司 Display module, driving method thereof and display device
CN111681551B (en) * 2020-06-28 2021-07-06 武汉华星光电技术有限公司 Display module and electronic equipment
TWI789673B (en) * 2020-08-27 2023-01-11 友達光電股份有限公司 Sensing device substrate and display apparatus having the same
TWI783829B (en) * 2021-05-20 2022-11-11 義明科技股份有限公司 Optical sensing integrated circuit and electronic device with the optical sensing integrated circuit
CN218825596U (en) * 2022-05-11 2023-04-07 指纹卡安娜卡敦知识产权有限公司 Optical fingerprint sensor and electronic device
TWI830585B (en) * 2023-01-19 2024-01-21 晨豐光電股份有限公司 Backlight panel with touch module

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7820255B2 (en) * 2003-05-29 2010-10-26 Konica Minolta Holdings, Inc. Transparent film for display substrate, display substrate using the film and method of manufacturing the same, liquid crystal display, organic electroluminescence display, and touch panel
KR101133758B1 (en) * 2005-01-19 2012-04-09 삼성전자주식회사 Sensor and thin film transistor array panel including sensor
EP1895545B1 (en) * 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP4333768B2 (en) * 2007-04-06 2009-09-16 ソニー株式会社 Display device
CN101681042B (en) * 2007-07-13 2013-07-24 夏普株式会社 Liquid crystal display device
TWI398707B (en) * 2008-05-16 2013-06-11 Au Optronics Corp Photo sensitive unit and pixel structure and liquid crystal display panel having the same
KR101889287B1 (en) * 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN101576672A (en) * 2009-03-27 2009-11-11 福建华映显示科技有限公司 Touch-control liquid crystal display
TWI580994B (en) * 2012-05-15 2017-05-01 Dainippon Printing Co Ltd A laminated substrate, a laminate, a laminate plate, a liquid crystal display panel, and an image display device
TWI656387B (en) * 2012-08-31 2019-04-11 日商大日本印刷股份有限公司 Laminated body, polarizing plate, liquid crystal panel, touch panel sensor, touch panel device and image display device
JP6299458B2 (en) * 2014-06-13 2018-03-28 大日本印刷株式会社 Display device with touch panel
TWI559185B (en) * 2014-10-03 2016-11-21 速博思股份有限公司 Display device with fingerprint recognition and touch detection
CN106250800B (en) * 2015-06-05 2021-08-27 Agc株式会社 Cover glass and portable information terminal
CN112860086A (en) * 2015-12-07 2021-05-28 大日本印刷株式会社 Writing sheet for touch panel pen, touch panel, display device, and method for screening writing sheet for touch panel pen
CN108602311B (en) * 2016-02-09 2021-07-27 大日本印刷株式会社 Optical laminate, method for producing same, front plate, and image display device
TWI616824B (en) * 2016-05-30 2018-03-01 晨星半導體股份有限公司 Fingerprint recognition device and touch-control device with fingerprint recognition function
CN110431520B (en) * 2017-03-24 2023-05-26 大日本印刷株式会社 Conductive film, touch panel, and image display device
TWI636393B (en) * 2017-07-31 2018-09-21 敦泰電子有限公司 In-display optical fingerprint identification display device
TWI637225B (en) * 2017-09-08 2018-10-01 奇景光電股份有限公司 Flat-panel display embedded with a fingerprint sensor and a method of forming the same
TWI652806B (en) * 2017-09-08 2019-03-01 奇景光電股份有限公司 Flat panel display with fingerprint sensor embedded therein and method of forming same
CN108415188B (en) * 2018-05-02 2021-11-16 上海中航光电子有限公司 Liquid crystal display panel, display device and fingerprint unlocking method thereof
CN108701230B (en) * 2018-05-17 2023-03-17 京东方科技集团股份有限公司 Biometric sensor, display device, method of manufacturing biometric sensor
TWM587775U (en) * 2019-07-07 2019-12-11 奕力科技股份有限公司 Display device having pixel structure and fingerprint identification chip

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI723876B (en) * 2020-05-08 2021-04-01 大陸商深圳天德鈺科技股份有限公司 Display device
TWI803870B (en) * 2020-05-11 2023-06-01 大陸商上海耕岩智能科技有限公司 Fingerprint imaging device and fingerprint imaging method
TWI756097B (en) * 2020-08-17 2022-02-21 友達光電股份有限公司 Fingerprint sensing module

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