TWI783829B - Optical sensing integrated circuit and electronic device with the optical sensing integrated circuit - Google Patents

Abstract

An optical sensing integrated circuit includes a substrate, a chip, a first optical element, a second optical element, a package body, and a quarter-wave plate. The chip is on the substrate and has a first optical sensor and a second optical sensor. The first optical element is on the first optical sensor and includes a first transparent substrate and a first polarization structure. The second optical element is on the second optical sensor and includes a second transparent substrate and a second polarization structure. A space is formed between the package body and the substrate to accommodate the chip, the first optical element and the second optical element, and the package body has an opening. The quarter-wave chip is mounted on the opening to cover the first optical sensor and the second optical sensor.

Description

Photo-sensing integrated circuit and electronic device using the photo-sensing integrated circuit

The invention relates to a light-sensing integrated circuit, in particular to a light-sensing integrated circuit with a polarization structure.

Optical sensors are used in mobile electronic devices and wearable electronic devices with display devices to achieve some functions, such as ambient light sensors (ambient light sensor) are used to detect the brightness of the environment to adjust the brightness of the display device, Proximity sensors are used to detect the approach of objects. Conventional optical sensors are generally placed in the peripheral space of the screen of the display device. However, with the demand for a high screen-to-body ratio, there is less and less space for placing optical sensors around the screen. In a display device with an OLED display panel, the optical sensor is disposed under the OLED display panel to achieve a high screen-to-body ratio.

However, the light of the OLED display panel will affect the detection result of the optical sensor. Therefore it is necessary to improve the prior art.

One of the objectives of the present invention is to provide a photo-sensing integrated circuit with a polarization structure.

One of the objectives of the present invention is to provide an electronic device using a light-sensing integrated circuit with a polarization structure.

According to the present invention, an electronic device includes an organic light emitting diode display panel, a polarizer, a first quarter-wave plate, and a light-sensing integrated circuit. The polarizer is located above the OLED display panel and has a first polarization direction. The first quarter-wave plate is located between the OLED display panel and the polarizer. The photo-sensing integrated circuit is located under the OLED display panel. The photo-sensing integrated circuit includes a substrate, a chip, a first optical element, a second optical element, a packaging body and a second quarter-wave plate. The chip is located on the substrate, wherein the chip has a first optical sensor and a second optical sensor to generate a first sensing value and a second sensing value respectively. The first optical element is located on the first optical sensor and includes a first transparent substrate and a first polarizing structure located between the first transparent substrate and the first optical sensor, wherein the first polarizing structure has a second polarization direction. The second optical element is located on the second optical sensor and includes a second transparent substrate and a second polarization structure located between the second transparent substrate and the second optical sensor, wherein the second polarization structure There is a third polarization direction perpendicular to the second polarization direction. An accommodating space is formed between the package body and the substrate to accommodate the chip, the first optical element and the second optical element, and the package body has an opening facing the first optical sensor and the second optical sensor. optical sensor. The second quarter-wave plate is installed on the opening to cover the first optical sensor and the second optical sensor.

According to the present invention, a photo-sensing integrated circuit includes a substrate, a chip, a first optical element, a second optical element, a package and a quarter-wave plate. The chip is located on the substrate, wherein the chip has a first optical sensor and a second optical sensor to generate a first sensing value and a second sensing value respectively. The first optical element is located on the first optical sensor and includes a first transparent substrate and a first polarizing structure located between the first transparent substrate and the first optical sensor, wherein the first polarizing structure has a first polarization direction. The second optical element is located on the second optical sensor and includes a second transparent substrate and a second polarization structure located between the second transparent substrate and the second optical sensor, wherein the second polarization structure with a direction perpendicular to the first polarization Second polarization direction. An accommodating space is formed between the package body and the substrate to accommodate the chip, the first optical element and the second optical element, and the package body has an opening facing the first optical sensor and the second optical sensor. optical sensor. The quarter-wave plate is installed on the opening to cover the first optical sensor and the second optical sensor.

According to the present invention, an electronic device includes an organic light emitting diode display panel, a polarizer, a first quarter-wave plate, and a light-sensing integrated circuit. The polarizer is located above the OLED display panel and has a first polarization direction. The first quarter-wave plate is located between the OLED display panel and the polarizer. The photo-sensing integrated circuit is located under the OLED display panel. The photo-sensing integrated circuit includes: a substrate, a chip, an optical element, a packaging body and a second quarter-wave plate. The chip is located on the substrate, wherein the chip has a first optical sensor and a second optical sensor to generate a first sensing value and a second sensing value respectively. The optical element is located on the first optical sensor and the second optical sensor and includes a transparent substrate, a first polarizing structure and a second polarizing structure, wherein the first polarizing structure is located on the transparent substrate and the transparent substrate Between the first optical sensors, the second polarization structure is located between the transparent substrate and the second optical sensor, the first polarization structure has a second polarization direction, and the second polarization structure has a direction perpendicular to the A third polarization direction of the second polarization direction. An accommodating space is formed between the package body and the substrate to accommodate the chip and the optical element, and the package body has an opening facing the first optical sensor and the second optical sensor. The second quarter-wave plate is installed on the opening to cover the first optical sensor and the second optical sensor.

According to the present invention, a photo-sensing integrated circuit includes a substrate, a chip, an optical element, a package and a quarter-wave plate. The chip is located on the substrate, wherein the chip has a first optical sensor and a second optical sensor to generate a first sensing value and a second sensing value respectively. The optical element is located on the first optical sensor and the second optical sensor and includes a transparent substrate, a first polarization structure and a second polarization structure, wherein the first polarization structure is located on the transparent substrate Between the bottom and the first optical sensor, the second polarization structure is located between the transparent substrate and the second optical sensor, the first polarization structure has a first polarization direction, and the second polarization structure has A second polarization direction perpendicular to the first polarization direction. An accommodating space is formed between the package body and the substrate to accommodate the chip and the optical element, and the package body has an opening facing the first optical sensor and the second optical sensor. The quarter-wave plate is installed on the opening to cover the first optical sensor and the second optical sensor.

10: Light sensing integrated circuit

12: Substrate

14: Wafer

142: Optical sensor

144: Optical sensor

16: Optical components

162: Transparent base

164:Polarization structure

1642: metal wire

1644: metal wire

1646: metal wire

166: transparent protective layer

18: Optical components

182: Transparent base

184:Polarization structure

186: transparent protective layer

20: Line up

22: Encapsulation

24:Accommodating space

26: Quarter wave plate

30: Light sensing integrated circuit

32: Optical components

322: Transparent base

324:Polarization structure

326:Polarization structure

328: transparent protective layer

40:Electronic device

42: Polarizer

44: Quarter wave plate

46: OLED display panel

P1: polarization direction

P2: Polarization direction

P3: Polarization direction

L1: ambient light

L2: linearly polarized light

L3: circularly polarized light

L4: linearly polarized light

FIG. 1 shows a cross-sectional view of the first embodiment of the photo-sensing integrated circuit of the present invention.

FIG. 2 shows a top view of the photo-sensing integrated circuit of FIG. 1 .

FIG. 3 is a partially enlarged view of the polarization structure in FIG. 1 .

Figure 4 shows an enlarged view of the optical element in Figure 1 .

5 to 9 show the packaging process of the photo-sensing integrated circuit shown in FIG. 1 .

FIG. 10 shows a cross-sectional view of the second embodiment of the photo-sensing integrated circuit of the present invention.

FIG. 11 shows an electronic device using the photo-sensing IC of FIG. 1 .

FIG. 1 shows a cross-sectional view of the light-sensing integrated circuit 10 of the present invention, and FIG. 2 shows a top view of the light-sensing integrated circuit 10 of the present invention. The photo-sensing integrated circuit 10 includes a substrate 12 , a chip 14 , optical elements 16 and 18 , bonding wires 20 , a package 22 and a quarter-wave plate 26 . The chip 14 is located on the substrate 12 , and the chip 14 has two optical sensors 142 and 144 for sensing light to generate sensing values C1 and C2 respectively. In one embodiment, the optical sensors 142 and 144 may be but not limited to photodiodes. The optical element 16 is located on the optical sensor 142 and includes a transparent substrate 162 , a polarizing structure 164 and a transparent protective layer 166 . The polarization structure 164 is located between the transparent substrate 162 and the optical sensor 142 and has a polarization direction P1. In order to avoid that when the optical element 16 is placed on the wafer 14, the polarizing structure 164 collides with the wafer 14 and is damaged, transparent The protection layer 166 is disposed between the polarization structure 164 and the optical sensor 142 and covers the polarization structure 164 . The optical element 18 is located on the optical sensor 144 and includes a transparent substrate 182 , a polarizing structure 184 and a transparent protective layer 186 . The polarization structure 184 is located between the transparent substrate 182 and the optical sensor 144 and has a polarization direction P2 perpendicular to the polarization direction P1. In order to prevent the polarizing structure 184 from colliding with the chip 14 and being damaged when the optical element 18 is placed on the chip 14 , the transparent protective layer 186 is arranged between the polarizing structure 184 and the optical sensor 144 and covers the polarizing structure 184 . The wire bonding 20 connects the substrate 12 and the chip 14 so that signals or data on the chip 14 can be transmitted to the substrate 12 . An accommodating space 24 is formed between the package body 22 and the substrate 12 to accommodate the chip 14 , the optical elements 16 and 18 and the wire bonding 20 . The package body 22 has an opening 222 (see FIG. 9 ) facing the optical sensors 142 and 144 . The quarter wave plate 26 is mounted on the opening 222 of the package body 22 to cover the optical sensors 142 and 144 .

In the photo-sensing integrated circuit 10 of FIG. 1 , the polarizing structure 164 is located under the transparent substrate 162 close to the optical sensor 142 , which ensures that the light entering the optical sensor 142 must pass through the polarizing structure 164 . If the polarizing structure 164 is arranged on the transparent substrate 162 away from the optical sensor 142, some light rays, such as light with no polarization state or polarized light perpendicular to the polarization direction P1, may not pass through the polarizing structure 164, but Entering the optical sensor 142 from the side of the transparent substrate 162 affects the sensing result of the optical sensor 142 . Similarly, the polarizing structure 184 is attached to the optical sensor 144 through the transparent protective layer 186, so the light entering the optical sensor 144 must also pass through the polarizing structure 184 to avoid unintended light, such as non-polarized light The light or the polarized light perpendicular to the polarization direction P2 enters the optical sensor 144 .

FIG. 3 is a partially enlarged view of the polarization structure 164 in FIG. 1 . The polarization structure 164 is composed of a plurality of metal wires 1642, 1644 and 1646 parallel to the polarization direction P1, wherein the height H of the metal wires 1642, 1644 and 1646 can be but not limited to 200nm~300nm, the metal wires 1642, The line width (width) W of 1644 and 1646 may be but not limited to 30nm-80nm, and the space S between adjacent metal lines may be but not limited to 20nm-100nm. The material of metal wires 1642, 1644 and 1646 can be aluminum or gold, but not limited here. The polarization structure 184 is similar to the polarization structure 164, except that the metal lines of the polarization structure 184 are parallel to the polarization direction P2.

FIG. 4 is an enlarged view of the optical element 16 in FIG. 1 . In order to protect the polarization structure 164 , the thickness T of the transparent protective layer 166 needs to be greater than the line height H of the metal lines 1642 , 1644 and 1646 . Similarly, the thickness T of the transparent protective layer 186 of the optical element 18 is also greater than the line height H of the metal lines of the polarization structure 184 . In one embodiment, the thickness T of the transparent protection layers 166 and 186 is 1 um, but the invention is not limited thereto.

In one embodiment, the transparent substrate 162, the transparent substrate 182 and the quarter wave plate 26 can be optical glass, but the present invention is not limited thereto, the transparent substrate 162, the transparent substrate 182 and the quarter wave plate 26 can also be Is other heat-resistant transparent materials.

5 to 9 show the packaging process of the photo-sensing integrated circuit 10 . First, step S100 of FIG. 5 is performed to fix the wafer 14 on the substrate 12 , as shown in FIG. 6 . In one embodiment, the chip 14 can be attached on the substrate 12 by a die attach film (Die Attach Film; DAF), and then baked to fix the chip 14 on the substrate 12 . After the wafer 14 is fixed on the substrate 12 , step S102 of FIG. 5 is performed to dispose the optical elements 16 and 18 on the wafer 14 , as shown in FIG. 7 . In one embodiment, the optical elements 16 and 18 can be attached on the wafer 14 by adhesive silicone, and then baked to fix the optical elements 16 and 18 on the wafer 14 . After the optical elements 16 and 18 are fixed on the wafer 14 , step S104 of FIG. 5 is performed to perform a wire bonding process to form a wire bonding 20 between the substrate 12 and the wafer 14 , as shown in FIG. 8 . After the wire bonding 20 is completed, step S106 in FIG. 5 is performed to fix the package body 22 on the substrate 12 , as shown in FIG. 9 . In one embodiment, the package body 22 can be attached on the substrate 12 by adhesive silicone, and then baked to fix the package body 22 on the substrate 12 . After the package body 22 is fixed on the substrate 12, step S108 of FIG. 5 is performed, and the quarter-wave plate 26 is installed on the opening 222 of the package body 22 to complete the photo-sensing integrated circuit 10 of the present invention, as Figure 1 shows. In one embodiment, the quarter-wave plate 26 can be attached on the package body 22 by adhesive silicone, and then baked to fix the quarter-wave plate 26 on the package body 22 .

In a conventional light-sensing integrated circuit, the metal layer that can pass through the chip 14 is placed on the optical sensor Polarization structures are formed on 142 and 144 , but the line width of the polarization structures is limited by the manufacturing process of the wafer 14 , and it is not easy to manufacture, resulting in low yield of the wafer 14 . In the present invention, the polarizing structures 164 and 184 are fabricated on the transparent substrates 162 and 182 respectively, and then attached to the optical sensors 142 and 144. Therefore, the line width of the polarizing structures is not limited by the manufacturing process of the chip 14, and more Easy to make.

FIG. 10 shows a cross-sectional view of another embodiment of the photo-sensing integrated circuit of the present invention. The light-sensing integrated circuit 30 and the light-sensing integrated circuit 10 also include a substrate 12, a chip 14, a bonding wire 20, a package body 22, and a quarter-wave plate 26. The difference is that the light-sensing integrated circuit 30 only uses An optical element 32 . The optical element 32 is located on the optical sensors 142 and 144 and includes a transparent substrate 322 , a polarizing structure 324 , a polarizing structure 326 and a transparent protective layer 328 . The polarization structure 324 is located between the transparent substrate 322 and the optical sensor 142 and has a polarization direction P1. The polarization structure 326 is located between the transparent substrate 322 and the optical sensor 144 and has a polarization direction P2 perpendicular to the polarization direction P1. In order to prevent the polarizing structures 324 and 326 from colliding with the chip 14 and being damaged when the optical element 42 is placed on the chip 14, the transparent protective layer 328 is configured between the polarizing structure 324 and the optical sensor 142, and between the polarizing structure 326 and the optical sensor 142. Between the sensors 144 and wrapping the polarization structures 324 and 326 .

The packaging process of the photo-sensing integrated circuit 30 is almost the same as that of the photo-sensing integrated circuit 10. You can refer to the packaging process of FIG. 32 is disposed on the wafer 14 . In one embodiment, the optical element 32 can be attached on the wafer 14 by adhesive silicone, and then baked to fix the optical element 32 on the wafer 14 .

FIG. 11 shows an electronic device 40 using the photo-sensing integrated circuit 10 of the present invention. The electronic device 40 includes a polarizer 42 , a quarter wave plate 44 , an OLED display panel 46 and a photo-sensing integrated circuit 10 . The polarizer 42 is located above the OLED display panel 46 and has a polarization direction P3. The quarter wave plate 44 is located between the polarizer 42 and the OLED display panel 46 . The photo-sensing integrated circuit 10 is located below the OLED display panel 46 . In this embodiment, the polarization direction P3 of the polarizing plate 42 is parallel to the polarization direction P1 of the polarization structure 164, but the present invention is not limited thereto, and the distance between the polarization direction P3 and the polarization direction P1 may also be greater than 0 degrees. And the included angle is less than 90 degrees.

In one embodiment, the light-sensing integrated circuit 10 is an ambient light sensor for detecting the intensity of ambient light outside the electronic device 40 . When the non-polarized ambient light L1 outside the electronic device 40 passes through the polarizer 42 , it will become linearly polarized light L2 with a polarization direction P3 . The linearly polarized light L2 will become circularly polarized light L3 after passing through the quarter-wave plate 44 . Then, when the circularly polarized light L3 passes through the quarter-wave plate 26 of the photo-sensing integrated circuit 10 , the circularly polarized light L3 will return to the linearly polarized light L4 with the polarization direction P3. Since the polarization direction P1 of the polarization structure 164 of the optical element 16 in the photo-sensing integrated circuit 10 is parallel to the polarization direction P3, the linearly polarized light L4 can enter the optical sensor 142 through the polarization structure 164 . The polarization direction P2 of the polarization structure 184 of the optical element 18 in the photo-sensing integrated circuit 10 is perpendicular to the polarization direction P3 , so the linearly polarized light L4 is blocked by the polarization structure 184 and cannot enter the optical sensor 144 . At the same time, the OLED display panel 46 may also generate light L5 to the photo-sensing integrated circuit 10 . Since the light L5 is in a non-polarized state, the light L5 is almost unaffected after passing through the quarter-wave plate 26 . Then, part of the light L5 is filtered by the polarizing structures 164 and 184 . Since the polarization direction P1 of the polarization structure 164 is perpendicular to the polarization direction P2 of the polarization structure 184, it can be considered that the polarization structure 164 allows half of the light L5 to enter the optical sensor 142, and the polarization structure 184 also allows half of the light L5 to enter the optical sensor 142. device 144. In other words, the optical sensor 142 will generate a sensing value C1=L4+L5/2, and the optical sensor 144 will generate a sensing value C2=L5/2, and finally subtract the sensing value C2 from the sensing value C1 to get The interference of the OLED display panel 46 can be eliminated, and the linearly polarized light L4 can be obtained, so that the intensity of the ambient light L1 can be accurately judged. In an embodiment, the photo-sensing integrated circuit 10 in FIG. 11 can also be replaced by a photo-sensing integrated circuit 30 .

In the above embodiments, the light-sensing integrated circuit 10 or 30 is an ambient light sensor, but the present invention is not limited thereto, and the light-sensing integrated circuit 10 or 30 can also be other optical sensors, such as proximity sensor, proximity sensor or in-display fingerprint sensor.

In traditional electronic devices, the quarter-wave plate and the ambient light sensor are two independent components, and the quarter-wave plate is set on the package of the ambient light sensor. Therefore, the traditional electronic device There will be a greater thickness. In addition, when assembling electronic devices, the quarter-wave plate and the optical sensor in the ambient light sensor need to be accurately aligned, so the assembly process is more complicated, and once the assembly deviates, the optical path may have errors. This leads to false detection results. The present invention integrates the quarter-wave plate 26 in the photo-sensing integrated circuit 10 or 30, so the thickness of the electronic device 40 can be reduced, and in the packaging process of the photo-sensing integrated circuit 10 or 30, the quarter wave One of the wave plates 26 has been aligned with the optical sensors 142 and 144 , so the process of assembling the electronic device 40 can be simplified, and errors in detection results will not be caused by deviations in the assembly of the electronic device 40 .

The above descriptions of the preferred embodiments of the present invention are for the purpose of illustration, and are not intended to limit the present invention to the disclosed form. It is possible to modify or change based on the above teachings or learning from the embodiments of the present invention. The embodiment is selected and described in order to explain the principle of the present invention and to allow those familiar with the art to use the present invention in various embodiments for practical application. Decide.

10: Light sensing integrated circuit

12: Substrate

14: Wafer

142: Optical sensor

144: Optical sensor

16: Optical components

162: Transparent base

164:Polarization structure

166: transparent protective layer

18: Optical components

182: Transparent base

184:Polarization structure

186: transparent protective layer

20: Line up

22: Encapsulation

24:Accommodating space

26: Quarter wave plate

Claims (22)

An electronic device, comprising: an organic light emitting diode display panel; a polarizing plate located above the organic light emitting diode display panel and having a first polarization direction; a first quarter wave plate located on the Between the organic light emitting diode display panel and the polarizer; and a photo-sensing integrated circuit located under the organic light-emitting diode display panel, wherein the photo-sensing integrated circuit includes: a substrate; a The chip is located on the substrate, wherein the chip has a first optical sensor and a second optical sensor to generate a first sensing value and a second sensing value respectively; a first optical element is located on the On the first optical sensor and including a first transparent substrate and a first polarization structure located between the first transparent substrate and the first optical sensor, wherein the first polarization structure has a second polarization direction; A second optical element is located on the second optical sensor and includes a second transparent substrate and a second polarization structure located between the second transparent substrate and the second optical sensor, wherein the second polarization The structure has a third polarization direction perpendicular to the second polarization direction; a package body forms an accommodating space with the substrate to accommodate the chip, the first optical element and the second optical element, and the package The body has an opening facing the first optical sensor and the second optical sensor; and a second quarter-wave plate mounted on the opening to cover the first optical sensor and the second optical sensor the second optical sensor. The electronic device according to claim 1, wherein the first polarization direction is parallel to the second polarization direction. The electronic device according to claim 1, wherein the first optical element further includes a first transparent protective layer between the first polarization structure and the first optical sensor, and the second optical element further includes a second transparent protective layer The protection layer is between the second polarization structure and the second optical sensor. The electronic device according to claim 3, wherein the first polarization structure includes a plurality of first metal wires parallel to the second polarization direction, and the second polarization structure includes a plurality of second metal wires parallel to the third polarization direction , the thickness of the first transparent protection layer is greater than the thickness of the first metal line, and the thickness of the second transparent protection layer is greater than the thickness of the second metal line. The electronic device according to claim 3, wherein the thickness of the first or second transparent protective layer is 1um. The electronic device according to claim 1, wherein the first transparent substrate and the second transparent substrate comprise optical glass. A light-sensing integrated circuit, comprising: a substrate; a chip located on the substrate, wherein the chip has a first optical sensor and a second optical sensor to generate a first sensing value and a The second sensing value; a first optical element located on the first optical sensor and including a first transparent substrate and a first polarization structure located between the first transparent substrate and the first optical sensor , wherein the first polarization structure has a first polarization direction; a second optical element is located on the second optical sensor and includes a second transparent substrate The bottom and a second polarization structure are located between the second transparent substrate and the second optical sensor, wherein the second polarization structure has a second polarization direction perpendicular to the first polarization direction; a package body, and An accommodating space is formed between the substrates to accommodate the chip, the first optical element and the second optical element, and the package has an opening facing the first optical sensor and the second optical sensor and a quarter-wave plate installed on the opening to cover the first optical sensor and the second optical sensor. The photo-sensing integrated circuit according to claim 7, wherein the first optical element further includes a first transparent protective layer between the first polarization structure and the first optical sensor, and the second optical element further includes A second transparent protection layer is between the second polarization structure and the second optical sensor. The photo-sensing integrated circuit according to claim 8, wherein the first polarization structure comprises a plurality of first metal wires parallel to the first polarization direction, and the second polarization structure comprises a plurality of metal lines parallel to the second polarization direction For the second metal line, the thickness of the first transparent protection layer is greater than the line height of the first metal line, and the thickness of the second transparent protection layer is greater than the line height of the second metal line. The photo-sensing integrated circuit according to claim 8, wherein the thickness of the first or second transparent protective layer is 1um. The photo-sensing integrated circuit according to claim 7, wherein the first transparent substrate and the second transparent substrate comprise optical glass. An electronic device, comprising: an organic light emitting diode display panel; A polarizer, located above the organic light emitting diode display panel, has a first polarization direction; a first quarter-wave plate, located between the organic light emitting diode display panel and the polarizer; and a photo-sensing integrated circuit located under the organic light-emitting diode display panel, wherein the photo-sensing integrated circuit includes: a substrate; a chip located on the substrate, wherein the chip has a first optical The sensor and a second optical sensor generate a first sensing value and a second sensing value respectively; an optical element is located on the first optical sensor and the second optical sensor and includes A transparent substrate, a first polarization structure and a second polarization structure, wherein the first polarization structure is located between the transparent substrate and the first optical sensor, and the second polarization structure is located between the transparent substrate and the second Between the optical sensors, the first polarization structure has a second polarization direction, and the second polarization structure has a third polarization direction perpendicular to the second polarization direction; a package body forms a an accommodating space for accommodating the chip and the optical element, and the package has an opening facing the first optical sensor and the second optical sensor; and a second quarter-wave plate installed The opening is used to cover the first optical sensor and the second optical sensor. The electronic device according to claim 12, wherein the first polarization direction is parallel to the second polarization direction. The electronic device according to claim 12, wherein the optical element further comprises a transparent protective layer on Between the first polarization structure and the first optical sensor, and between the second polarization structure and the second optical sensor. The electronic device according to claim 14, wherein the first polarization structure includes a plurality of first metal wires parallel to the second polarization direction, and the second polarization structure includes a plurality of second metal wires parallel to the third polarization direction , the thickness of the transparent protective layer is greater than the line heights of the first and second metal lines. The electronic device according to claim 14, wherein the thickness of the transparent protective layer is 1um. The electronic device according to claim 12, wherein the transparent substrate comprises optical glass. A light-sensing integrated circuit, comprising: a substrate; a chip located on the substrate, wherein the chip has a first optical sensor and a second optical sensor to generate a first sensing value and a The second sensing value; an optical element located on the first optical sensor and the second optical sensor and including a transparent substrate, a first polarization structure and a second polarization structure, wherein the first polarization The structure is located between the transparent substrate and the first optical sensor, the second polarization structure is located between the transparent substrate and the second optical sensor, the first polarization structure has a first polarization direction, and the second polarization structure is located between the transparent substrate and the second optical sensor. The two polarization structures have a second polarization direction perpendicular to the first polarization direction; a package body forms an accommodating space with the substrate to accommodate the chip and the optical element, and the package body has an opening facing the first optical sensor and the second optical sensor; and a quarter wave plate installed on the opening to cover the first optical sensor and the second optical sensor. The photo-sensing integrated circuit according to claim 18, wherein the optical element further comprises a transparent protective layer between the first polarization structure and the first optical sensor, and between the second polarization structure and the second between optical sensors. The photo-sensing integrated circuit according to claim 19, wherein the first polarization structure comprises a plurality of first metal lines parallel to the first polarization direction, and the second polarization structure comprises a plurality of metal lines parallel to the second polarization direction For the second metal line, the thickness of the transparent protective layer is greater than the line heights of the first metal line and the second metal line. The photo-sensing integrated circuit according to claim 19, wherein the thickness of the transparent protective layer is 1um. The photo-sensing integrated circuit as claimed in claim 18, wherein the transparent substrate comprises optical glass.

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