TW202209170A - Sensing device - Google Patents

Abstract

A sensing device includes a light emitting panel and a sensing pixel array structure. The light emitting panel is adapted to emit an initial light with a first waveform. The sensing pixel array structure includes a plurality of first sensing pixel structures and at least one second sensing pixel structure. The first sensing pixel structures allow the first sensing elements thereof to sense the initial light with the first waveform as the first sensing light provided by the first sensing pixel structures. The first sensing pixel structures occupy more than 90% but less than 100% of a configuration area of the overall sensing pixel array structure. The second sensing pixel structure includes a second sensing element and a light conversion layer. The second sensing pixel structure is adapted to adjust the initial light with the first waveform to a second sensing light with a second waveform, and allows the second sensing element to sense the second sensing light.

Description

sensing device

The present invention relates to a sensing device, and more particularly, to a sensing device having at least two sensing pixel structures.

The fingerprint recognition function can support a variety of applications, enhance user experience and increase added value, and is currently one of the key development projects in the industry. In the existing fingerprint sensing device, in addition to the sensing structure for fingerprint identification, a sensing structure for fingerprint anti-counterfeiting is also provided to distinguish the authenticity of the fingerprint. The sensing structure for fingerprint anti-counterfeiting is often equipped with color filter layers such as color resist to realize anti-counterfeiting identification. After the light reflected by the fingerprint passes through the color filter layer, the light quantity will be reduced by about 2/3, so the sensing element in the fingerprint anti-counterfeiting sensing structure can only receive about 1/3 of the light quantity, so that the amount of light received by the sensing element Signal strength decreases. Therefore, how to improve the sensitivity of the sensing element and the strength of the signal received by the sensing element, etc., have become issues of concern to researchers at present.

The present invention provides a sensing device whose design can help increase the amount of light received by the sensing element, thereby improving the quality of the sensing device.

At least one embodiment of the present invention provides a sensing device including a light emitting panel and a sensing pixel array structure. The light emitting panel is adapted to emit the initial light of the first waveform. The sensing pixel array structure is located on the back side of the light emitting panel, wherein the sensing pixel array structure includes a plurality of first sensing pixel structures and at least one second sensing pixel structure. Each first sensing pixel structure includes a first sensing element, and each first sensing pixel structure uses the initial light of the first waveform as the first sensing light to provide the first sensing element for sensing, wherein a plurality of The proportion of the configuration area of a sensing pixel structure to the overall sensing pixel array structure is more than 90% but less than 100%. At least one second sensing pixel structure includes a second sensing element and a light conversion layer. The light conversion layer is located between the second sensing element and the light emitting panel. The at least one second sensing pixel structure is adapted to adjust the initial light of the first waveform into a second sensing light to provide the second sensing element for sensing, and the second sensing light has a second waveform different from the first waveform . The light conversion layer has an excitation peak wavelength, and the excitation peak wavelength is in the range of 400 nm to 750 nm.

In an embodiment of the present invention, the light conversion layer includes quantum dots.

In an embodiment of the present invention, the second sensing light includes converted light obtained by converting a part of the original light through the light conversion layer and another part of the original light that has passed through the light conversion layer but is not converted by the light conversion layer.

In an embodiment of the present invention, the at least one second sensing pixel structure further includes a light collimation structure and a lens sequentially stacked on the second sensing element.

In an embodiment of the present invention, the light conversion layer of the at least one second sensing pixel structure is located between the lens and the sensing element.

In an embodiment of the present invention, the light conversion layer of the at least one second sensing pixel structure is located between the light emitting panel and the lens.

In an embodiment of the present invention, the above-mentioned sensing device further includes at least one third sensing pixel structure. At least one third sensing pixel structure includes a third sensing element and a color filter layer. The color filter layer is located between the third sensing element and the light emitting panel. The at least one third sensing pixel structure is adapted to adjust the initial light of the first waveform into a third sensing light to provide the third sensing element for sensing, and the third sensing light has a third waveform different from the first waveform .

In an embodiment of the present invention, the proportion of the at least one second sensing pixel structure and the at least one third sensing pixel structure in the overall sensing pixel array structure is less than 10%, but more than 0% %.

In an embodiment of the present invention, the above-mentioned first waveform is in a wavelength range of 400 nm to 700 nm.

At least another embodiment of the present invention provides a sensing device including a sensing pixel array structure. The sensing pixel array structure includes a plurality of first sensing pixel structures and at least one second sensing pixel structure arranged in an array. The ratio of the configuration area of the plurality of first sensing pixel structures to the overall sensing pixel array structure is more than 90% but less than 100%. Each first sensing pixel structure includes a first sensing element, and each first sensing pixel structure provides the first sensing element with an initial light of a first waveform as the first sensing light for sensing. The at least one second sensing pixel structure includes a second sensing element, and the at least one second sensing pixel structure is adapted to adjust the initial light of the first waveform into the second sensing light to provide the second sensing element for sensing and the second sensing light has a second waveform different from the first waveform.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. The same reference numerals refer to the same elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on," "connected to," "overlying" another element, it can be directly on the other element on or connected to another element, or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may refer to the existence of other elements between the two elements.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or or parts shall not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, "a first element," "component," "region," "layer," or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms including "at least one" unless the content clearly dictates otherwise. "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will also be understood that, when used in this specification, the terms "comprising" and/or "comprising" designate the stated feature, region, integer, step, operation, presence of an element and/or part, but do not exclude one or more The presence or addition of other features, entireties of regions, steps, operations, elements, components, and/or combinations thereof.

Furthermore, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the particular orientation of the figures. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "above" can encompass both an orientation of above and below.

As used herein, "about", "substantially", or "approximately" includes the stated value and the average within an acceptable deviation of the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the A specific amount of measurement-related error (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "substantially", or "approximately" may be used to select a more acceptable range of deviation or standard deviation depending on optical properties, etching properties, or other properties, and not one standard deviation may apply to all. nature.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed as having meanings consistent with their meanings in the context of the related art and the present invention, and are not to be construed as idealized or excessive Formal meaning, unless expressly defined as such herein.

Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Thus, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and/or tolerances, are to be expected. Accordingly, the embodiments described herein should not be construed as limited to the particular shapes of regions as shown herein, but rather include deviations in shapes resulting from, for example, manufacturing. For example, regions illustrated or described as flat may typically have rough and/or nonlinear features. Additionally, the acute angles shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.

FIG. 1 is a schematic top view of a sensing device according to an embodiment of the present invention. Referring to FIG. 1 , the sensing device 10 includes a sensing pixel array structure SS. In this embodiment, the sensing pixel array structure SS includes a plurality of first sensing pixel structures 110 and at least one second sensing pixel structure 120 arranged in an array.

The plurality of first sensing pixel structures 110 and the plurality of second sensing pixel structures 120 may be arranged in an array along the first direction D1 and the second direction D2, respectively. In this embodiment, the first direction D1 and the second direction D2 intersect, but the present invention is not limited to this. In one embodiment, the first sensing pixel structure 110 is used for fingerprint identification, for example, and the second sensing pixel structure 120 is used for anti-counterfeiting identification. That is to say, although the first sensing pixel structure 110 and the second sensing pixel structure 120 can also provide sensing functions, they can be used to discriminate different information. As shown in FIG. 1 , the number of the first sensing pixel structures 110 may be greater than the number of the second sensing pixel structures 120 .

In this embodiment, although a plurality of second sensing pixel structures 120 are used as an example for description, it is not limited thereto. In some embodiments, the sensing pixel structures arranged in an array to form the sensing pixel array structure SS may include only a single second sensing pixel structure. In other words, the sensing pixel array structure SS may only have a single second sensing pixel structure 120 for anti-counterfeiting identification, and the rest of the sensing pixel structures are the first sensing pixel structures 110 for fingerprint identification. .

In this embodiment, the ratio of the configuration area of the first sensing pixel structure 110 to the overall sensing pixel array structure SS is greater than the configuration area ratio of the second sensing pixel structure 120 to the entire sensing pixel array structure SS. For example, the ratio of the configuration area of the first sensing pixel structure 110 to the entire sensing pixel array structure SS is preferably more than 90% but less than 100%. In other words, the proportion of the second sensing pixel structure 120 to the configuration area of the entire sensing pixel array structure SS is preferably less than 10%. In addition, the lower limit of the ratio of the second sensing pixel structure 120 to the configuration area of the overall sensing pixel array structure SS is not particularly limited, as long as it is greater than 0%.

The arrangement and layout of the second sensing pixel structure 120 in the sensing pixel array structure SS can be adjusted according to different requirements. For example, as shown in FIG. 1 , the second sensing pixel structures 120 are arranged in groups of three in the sensing pixel array structure SS, and the three second sensing pixel structures 120 in each group are along the first The layout is arranged in a staggered manner in the two directions D2. Here, the three second sensing pixel structures 120 staggered along the second direction D2 form, for example, a V-shape with an opening facing the left side of FIG. 1 . In the first direction D1 , for example, three first sensing pixel structures 110 are spaced between two adjacent second sensing pixel structures 120 . In addition, in the second direction D2, adjacent two groups of the second sensing pixel structures 120 are, for example, spaced apart from each other along the first direction D1 to form four columns of the first sensing pixel structures 110. In other embodiments, the above-mentioned three second sensing pixel structures 120 can also be arranged in a straight line, an oblique line, or a scattered arrangement along the second direction D2, and those with ordinary knowledge in the art can follow the design requirements. The number and arrangement of the second sensing pixel structures 120 are adjusted, but the invention is not limited to this.

In this embodiment, the first sensing pixel structure 110 and the second sensing pixel structure 120 may have different structural designs to provide different sensing functions. When the first sensing pixel structure 110 and the second sensing pixel structure 120 are incident with the same initial light, the first sensing pixel structure 110 can directly use the initial light of the first waveform as the first sensing light for sensing. and the second sensing pixel structure 120 can adjust the initial light of the first waveform to the second sensing light having the second waveform to sense the second sensing light. The first sensing pixel structure 110 and the second sensing pixel structure 120 sense the sensing light of different waveforms, respectively, so as to generate different identification signals. The sensing device 10 can analyze the signals sensed by different sensing pixel structures through an algorithm to determine whether the fingerprint signals sensed by the sensing pixel array structure SS are abnormal, so as to identify the authenticity of the obtained fingerprint signals.

Hereinafter, embodiments applicable to the first sensing pixel structure and the second sensing pixel structure in the above-mentioned embodiments will be illustrated and described, but the present invention is not limited to the following embodiments.

FIG. 2A is a schematic diagram of a first embodiment of a cross section along line I-I' in the sensing device of FIG. 1 . It must be noted here that FIG. 2A uses the element numbers and part of the content of the embodiment in FIG. 1 , wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

Referring to FIG. 2A , the sensing device 10A includes a substrate 100 , a light emitting panel 200 and a sensing pixel array structure SS. In one embodiment, the substrate 100 may be a transparent substrate or a non-transparent substrate, and the material thereof may be a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but the invention is not limited thereto. Various film layers such as signal lines, driving elements, test elements, switching elements, storage capacitors, etc. can be formed on the substrate 100 .

In this embodiment, the light emitting panel 200 has a front side 200a and a back side 200b. In the following description, the side of the light emitting panel 200 close to or facing the finger F may be referred to as the front side 200a of the light emitting panel 200, and the other side relative to the front side 200a of the light emitting panel 200 may be referred to as the back side of the light emitting panel 200 200b. In addition, the back side 200b of the light emitting panel 200 can also be understood as the side facing the sensing pixel array structure SS. That is, the back side 200b of the light emitting panel 200 is located between the sensing pixel array structure SS and the front side 200a of the light emitting panel 200 . The light-emitting panel 200 is suitable for emitting light from the front side 200 a , so the front side 200 a can be understood as the light-emitting side of the light-emitting panel 200 .

In this embodiment, the light emitting panel 200 is adapted to emit the initial light 210 of the first waveform. In one embodiment, the wavelength range covered by the first waveform may be determined according to the design of the light-emitting elements of the light-emitting panel 200 . The initial light 210 of the first waveform is composed of visible light, for example. For example, the initial light 210 of the first waveform may be composed of visible light of different colors, such that the first waveform falls within the range of 400 nm to 700 nm. For the convenience of description, the initial light 210 of the first waveform can be divided into a first short wavelength part 212 , a first long wavelength part 214 and a first medium wavelength part 216 according to the wavelength range.

In this embodiment, the sensing pixel array structure SS is located on the back side 200 b of the light emitting panel 200 , and the sensing pixel array structure SS is located between the substrate 100 and the light emitting panel 200 . In this embodiment, the first sensing pixel structure 110 of the sensing pixel array structure SS includes a first sensing element 112 . The first sensing pixel structure 110 uses the initial light 210 of the first waveform as the first sensing light, and provides the first sensing element 112 for sensing. That is, the first sensing pixel structure 110 may not change the waveform of the initial light 210 so that the first sensing light sensed by the first sensing element 112 has the same first waveform as the initial light 210 . In other words, the first sensing light sensed by the first sensing element 112 is composed of, for example, the first short wavelength portion 212 , the first long wavelength portion 214 and the first medium wavelength portion 216 of the initial light 210 . In one embodiment, the first sensing element 112 may include various film layers and/or components (not shown) such as reading circuit structures, electrode layers, and sensing layers.

In this embodiment, each of the second sensing pixel and pixel structures 120 of the sensing pixel array structure SS may include a second sensing element 122 and a light conversion layer 124 . The light conversion layer 124 has wavelength conversion properties, and its absorption peak wavelength is smaller than the excitation peak wavelength. The absorption peak wavelength of the light conversion layer 124 may fall within the wavelength range of the first waveform and the excitation peak wavelength of the light conversion layer 124 may be, for example, in the range of 400 nm to 750 nm, but not limited thereto. That is, the light conversion layer 124 may absorb a portion of the initial light 210 of the first waveform and convert the absorbed portion into light having a longer wavelength range. In one embodiment, the light conversion layer 124 may include quantum dots, phosphors, or the like. Therefore, the second sensing pixel structure 120 is suitable for adjusting the initial light 210 of the first waveform into the second sensing light 220 to provide the second sensing element 122 for sensing, wherein the second sensing light 220 has the first The second waveform is different from the first waveform that the initial light 210 has.

In this embodiment, each of the first sensing pixel structure 110 and the second sensing pixel structure 120 further includes a light collimation structure stacked on the first sensing element 112 and the second sensing element 122 in sequence LS and lens ML.

As shown in FIG. 2A , the light collimation structure LS may include a first insulating layer 130 , a first light shielding layer BM1 , a second insulating layer 132 , a second light shielding layer BM2 and a third insulating layer stacked on the substrate 100 in sequence 134. In one embodiment, the first insulating layer 130 covers, for example, the top surface and the side surface of the first sensing element 112 and the top surface and the side surface of each second sensing element 122 . The first light shielding layer BM1 has, for example, a plurality of first openings V1 , and the first openings V1 can expose part of the first insulating layer 130 . In this embodiment, the plurality of first openings V1 may correspond to the first sensing elements 112 and the second sensing elements 122 respectively. The second insulating layer 132, for example, fills the first opening V1 of the first light shielding layer BM1 and covers the top surface of the first light shielding layer BM1. For example, the second light shielding layer BM2 has a plurality of second openings V2 , and the second openings V2 may expose part of the second insulating layer 132 . In this embodiment, the second opening V2 may correspond to the first opening V1. In this way, the first sensing element 112 and each of the second sensing elements 122 can receive the light controlled by the first opening V1 and the second opening V2 for sensing.

The third insulating layer 134, for example, fills the second opening V2 of the second light shielding layer BM2, and covers the top surface of the second light shielding layer BM2. In one embodiment, the materials of the first insulating layer 130 and the second insulating layer 132 may include organic materials, such as acrylic materials, siloxane materials, polyimide materials, epoxy resin materials, or a stack of the above materials. layer, but the present invention is not limited thereto. The material of the first light-shielding layer BM1 and the second light-shielding layer BM2 may include light-shielding materials such as metal, black resin, or graphite, or a stack of the above-mentioned light-shielding materials, but the present invention is not limited thereto. The material of the third insulating layer 134 may include inorganic materials or organic materials, wherein the inorganic materials are, for example, silicon oxide, silicon nitride, silicon oxynitride, or a stack of the above materials, and the organic materials are, for example, acrylic materials, siloxanes, etc. material, polyimide material, epoxy resin material, or a laminate of the above materials, etc. It should be noted that although the third insulating layer 134 in FIG. 2A is only shown as a single-layer structure, in other embodiments, the third insulating layer 134 may also be a multi-layer structure. For example, the third insulating layer 134 can also be a two-layer, three-layer or four-layer structure. The number of layers and the material of the third insulating layer 134 can be adjusted according to design requirements, but the invention is not limited thereto.

A plurality of lenses ML are located between the light collimation structure LS and the light emitting panel 200 . In this embodiment, a third light shielding layer BM3 is further provided on the light collimation structure LS. For example, the third light shielding layer BM3 has a plurality of third openings V3 , and the third openings V3 may expose part of the third insulating layer 134 . In this embodiment, the third opening V3 may correspond to the second opening V2. In one embodiment, the material of the third light-shielding layer BM3 may include light-shielding materials such as metal, black resin or graphite, or a stack of the above-mentioned light-shielding materials, but the present invention is not limited thereto. The lens ML is disposed in the third opening V3, for example. The lens ML may be a lens structure with a larger central thickness than an edge thickness, such as a symmetric lenticular lens, an asymmetric lenticular lens, a plano-convex lens, or a meniscus lens. The lens ML can improve light collimation, so that the problems of light leakage and light mixing caused by scattered light or refracted light can be reduced, thereby reducing light loss.

On the other hand, the light emitting direction of the light emitting panel 200 is, for example, away from the sensing pixel array structure SS. In this way, when the finger F approaches the front side 200a of the light emitting panel 200, the initial light 210 of the first waveform emitted by the light emitting panel 200 can be reflected by the finger F, and the initial light 210 of the first waveform reflected by the finger F can pass through first. The lens ML, the second opening V2 and the first opening V1 improve the collimation, and then enter the first sensing element 112 and each second sensing element 122, so that the first sensing element 112 and each second sensing element 122 A fingerprint signal with good quality can be obtained, so that the sensing device 10A has a good fingerprint recognition degree.

The light conversion layer 124 of the second sensing pixel structure 120 is located between the second sensing element 122 and the light emitting panel 200 . In this embodiment, the light conversion layer 124 is, for example, located between the lens ML and the sensing element 122A. Specifically, the light conversion layer 124 is located, for example, on the side of the third insulating layer 134 close to the lens ML. Although it is shown in FIG. 2A that the light conversion layer 124 directly contacts the bottom of the lens ML, in other embodiments, the light conversion layer 124 and the lens ML can be separated by a distance; or the third insulating layer 134 has a multi-layer structure. In this case, at least one layer of the multi-layer structure is also spaced apart, as long as the light conversion layer 124 is located on the traveling path of the initial light 210 of the first waveform, and the present invention is not limited thereto.

In this embodiment, the second sensed light 220 includes converted light obtained by converting a part of the initial light 210 of the first waveform via the light conversion layer 124 , and the second light that passes through the light conversion layer 124 but is not converted by the light conversion layer 124 . Another portion of the initial light 210 of a waveform. According to the wavelength conversion characteristics, the second sensing pixel structure 120 can include three designs, such as the second sensing pixel structure 120A, the second sensing pixel structure 120B and the second sensing pixel structure 120C. The second sensing pixel structure 120A may include a light conversion layer 124A for adjusting the initial light 210 of the first waveform into the second sensing light 220A and a second sensing element 122A for sensing the second sensing light 220A; the second sensing element 122A; The sensing pixel structure 120B may include a light conversion layer 124B for adjusting the initial light 210 of the first waveform to the second sensing light 220B and a second sensing element 122B for sensing the second sensing light 220B; the second sensing The pixel structure 120C may include a light conversion layer 124C for adjusting the initial light 210 of the first waveform into the second sensing light 220C, and a second sensing element 122C for sensing the second sensing light 220C. However, in some embodiments, the plurality of second sensing pixel structures 120 may only have the same design, or the entire sensing device 10A may include only a single second sensing pixel structure 120 .

The second sensing light 220A, the second sensing light 220B, and the second sensing light obtained in the second sensing pixel structure 120A, the second sensing pixel structure 120B, and the second sensing pixel structure 120C, respectively, will be illustrated below. 220C, but the present invention is not limited to the following embodiments.

In the second sensing pixel structure 120A, the wavelength conversion characteristic of the light conversion layer 124A can, for example, convert the first short wavelength portion 212 of the initial light 210 into the first converted light 222 , but does not convert the first long wavelength of the initial light 210 . The wavelength portion 214 and the first mid-wavelength portion 216 . That is, the wavelength range of the first short wavelength portion 212 may be the absorption wavelength range of the light conversion layer 124A, and the wavelength range of the first converted light 222 may be the excitation wavelength range of the light conversion layer 124A. Therefore, the second sensing element 122A of the second sensing pixel structure 120A can receive the first converted light 222 converted by the light conversion layer 124A and the first converted light 222 that has passed through the light conversion layer 124A but is not converted by the light conversion layer 124A. Long wavelength portion 214 and first medium wavelength portion 216 . In this way, the second sensing element 122A receives the second sensing light 220A formed by the overlapping of the first converted light 222 , the first long wavelength portion 214 and the first medium wavelength portion 216 . In some embodiments, the first short wavelength portion 212 of the initial light 210 may not be fully absorbed by the light conversion layer 124A, so the second sensed light 220A may even include a portion of the unconverted first short wavelength portion 212 . In some embodiments, the first short-wavelength portion 212 , the first long-wavelength portion 214 and the first medium-wavelength portion 216 appear blue, red, and green, respectively, and the first converted light 222 appears red, for example, then the second The sensing light 220A is, for example, orange in color compared to the initial light 210 .

In the second sensing pixel structure 120B, the light conversion properties of the light conversion layer 124B can, for example, convert the first short wavelength portion 212 of the initial light 210 into the second converted light 224 , but do not convert the first long wavelength portion of the initial light 210 . The wavelength portion 214 and the first mid-wavelength portion 216 . In this way, the second sensing element 122B receives the second sensing light 220B formed by the overlapping of the second converted light 224 , the first long-wavelength portion 214 and the first medium-wavelength portion 216 . In some embodiments, the first short wavelength portion 212 of the initial light 210 may not be fully absorbed by the light conversion layer 124B, so the second sensed light 220B may even include a portion of the unconverted first short wavelength portion 212 . In some embodiments, the first short-wavelength portion 212 , the first long-wavelength portion 214 and the first medium-wavelength portion 216 appear blue, red, and green, respectively, and the second converted light 224 appears green, for example, then the second The sensing light 220B is yellowish green compared to the initial light 210 .

In the second sensing pixel structure 120C, the light conversion properties of the light conversion layer 124C may, for example, convert the first short wavelength portion 212 of the initial light 210 into the third converted light 226 , but do not convert the first long wavelength portion of the initial light 210 . The wavelength portion 214 and the first mid-wavelength portion 216 . In this way, the second sensing element 122C receives the second sensing light 220C formed by the overlapping of the third converted light 226 , the first long wavelength portion 214 and the first medium wavelength portion 216 . In some embodiments, the first short wavelength portion 212 of the initial light 210 may not be fully absorbed by the light conversion layer 124C, so the second sensed light 220C may even include a portion of the unconverted first short wavelength portion 212 . In some embodiments, the wavelength range of the third converted light 226 is different from the wavelength range of the first short wavelength portion 212 . Specifically, the wavelength range of the third converted light 226 is, for example, a direction in which the wavelength range of the first short wavelength portion 212 is shifted toward the long wavelength range. For example, the wavelength range of the third converted light 226 may be between the wavelength range of the first short wavelength portion 212 and the wavelength range of the first medium wavelength portion 216 . In some embodiments, since the wavelength range of the third converted light 226 is shifted toward the long wavelength range compared to the first short wavelength portion 212 , the second sensing light 220C, for example, exhibits a different light than the initial light 210 .

The wavelength conversion function of the light conversion layer 124 can change the wavelength range of light without absorbing the light significantly. Therefore, the initial light 210 of the first waveform reflected by the finger F and incident on the second sensing pixel structure 120 can be adjusted to the second sensing light 220 of the second waveform through the light conversion layer 124 , but it will not cause obvious light loss. In this way, the second sensing element 122A, the second sensing element 122B, and the second sensing element 122C can receive a sufficient amount of the second sensing light 220, thereby improving the accuracy of the sensing elements. In other words, the signal strength received by the sensing element can be enhanced by the arrangement of the light-transmitting layer 124 , thereby improving the quality of the sensing device 10A and enhancing the fingerprint anti-counterfeiting effect.

In some embodiments, the absorption spectrum of the first sensing element 112 and each of the second sensing elements 122 may be defined according to the material of the sensing layer or the design of the sensing structure. For example, a sensing element using a silicon-rich oxide (SRO) as a sensing layer generally has an absorption spectrum in the wavelength range of 480 nm to 520 nm, and a sensing element with a PIN diode structure The element generally has an absorption spectrum with wavelengths ranging from 580 nm to 620 nm. Therefore, not all of the first short wavelength portion 212, the first long wavelength portion 214, and the first medium wavelength portion 216 of the initial light 210 can effectively cause the sensing element to sense. For a small number of second sensing pixel structures 120, the sensing efficiency of the second sensing element 122 may be limited. However, in this embodiment, the light conversion layer 124 is arranged in a small number of the second sensing pixel structures 120 , so that more part of the light of the second sensing light 220 can fall on the sensor by selecting the light conversion material. The wavelengths in the absorption spectrum of the sensing element are thus helpful to improve the sensing sensitivity and sensing efficiency of the second sensing element 122 . Therefore, the sensing device 10A can have an ideal anti-counterfeiting identification function.

FIG. 2B is a schematic diagram of a second embodiment of the cross section along line I-I' in the sensing device of FIG. 1 . It must be noted here that FIG. 2B uses the element numbers and part of the content of the embodiment in FIG. 2A , wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

In this embodiment, the difference between the sensing device 10B shown in FIG. 2B and the sensing device 10A shown in FIG. 2A is that the light conversion layer 124 is located between the light emitting panel 200 and the lens ML.

Specifically, the light conversion layer 124 is, for example, located on the backside 200b of the light emitting panel 200 . Therefore, the initial light 210 of the first waveform reflected by the finger F can be adjusted to the second sensing light 220 of the second waveform through the light conversion layer 124, and then the lens ML, the second opening V2 and the first opening V1 are used to improve the collimation Spend. Usually, the second sensing light 220 adjusted by the light conversion layer 124 is more divergent than the initial light 210. Therefore, the second sensing light 220 of the sensing device 10B also passes through the lens ML to further improve its collimation, so that the second sensing light 220 of the sensing device 10B is further improved. The sensing element 122 can receive a fingerprint signal of good quality, thereby improving the fingerprint anti-counterfeiting effect of the sensing device 10B.

FIG. 2C is a schematic diagram of a third embodiment of the cross section along line I-I' of the sensing device of FIG. 1 . It must be noted here that FIG. 2C uses the element numbers and part of the content of the embodiment of FIG. 2A , wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

In this embodiment, the difference between the sensing device 10C shown in FIG. 2C and the sensing device 10A shown in FIG. 2A is that the light conversion layer 124 is disposed on the surface MLa of the lens ML.

Specifically, the light conversion layer 124 is, for example, located on the surface MLa of the lens ML facing the light emitting panel 200 . Therefore, the initial light 210 of the first waveform reflected by the finger F can be adjusted into the second sensing light 220 of the second waveform through the light conversion layer 124, and the second sensing light 220 directly passes through the lens ML, and then passes through the second opening V2 and the first opening V1 to improve the collimation degree. In this way, the second sensing light 220 directly passes through the lens ML to avoid the divergence phenomenon caused by the light conversion layer 124 , thereby improving the fingerprint anti-counterfeiting effect of the sensing device 10C.

FIG. 3 is a schematic top view of a sensing device according to another embodiment of the present invention. It must be noted here that FIG. 3 uses the element numbers and part of the content of the embodiment in FIG. 1 , wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

In this embodiment, the difference between the sensing device 20 shown in FIG. 3 and the sensing device 10 shown in FIG. 1 is that the sensing pixel array structure SS of the sensing device 20 further includes at least one first The three-sensing pixel structure 300 . Specifically, the sensing pixel array structure SS of the sensing device 20 includes a plurality of first sensing pixel structures 110 , at least one second sensing pixel structure 120 and at least one third sensing pixel structure arranged in an array. Elemental structure 300.

In one embodiment, the third sensing pixel structure 300 can be used for anti-counterfeiting identification as the second sensing pixel structure 120, for example. For example, the third sensing pixel structure 300 can be used to discriminate anti-counterfeiting identification information different from the second sensing pixel structure 120, thereby helping to improve the accuracy of the identification result. As shown in FIG. 3 , the number of the second sensing pixel structures 120 may be greater than the number of the third sensing pixel structures 300 .

In this embodiment, although a plurality of third sensing pixel structures 300 are used as an example for description, it is not limited thereto. In some embodiments, the sensing pixel structures arranged in an array to form the sensing pixel array structure SS may include only a single third sensing pixel structure 300 .

In this embodiment, the proportion of the configuration area of the first sensing pixel structure 110 in the entire sensing pixel array structure SS is larger than that of the second sensing pixel structure 120 and the third sensing pixel structure 300 in the entire sensing image The configuration area ratio of the pixel array structure SS. For example, the ratio of the total arrangement area of the second sensing pixel structure 120 and the third sensing pixel structure 300 to the overall arrangement area of the sensing pixel array structure SS is preferably less than 10%, but exceeds 0% . That is to say, the configuration area of the first sensing pixel structure 110 in the entire sensing pixel array structure SS is greater than 90%, but less than 100%.

The arrangement and layout of the third sensing pixel structure 300 in the sensing pixel array structure SS can be adjusted according to different requirements. For example, as shown in FIG. 3 , for example, the sensing device 20 replaces one of the second sensing pixel structures 120 of the sensing device 10 with the third sensing pixel structure 300 . That is to say, in the sensing pixel array structure SS of the sensing device 20, two second sensing pixel structures 120 and one third sensing pixel structure 300 are set as a group, and the second sensing pixel structure 300 in each set is The sensing pixel structures 120 and the third sensing pixel structures 300 are arranged in a staggered manner along the second direction D2. Here, the third sensing pixel structure 300 is, for example, located on one side of each set of sensing pixel structures, and is only adjacent to one second sensing pixel structure 120 . In other embodiments, the third sensing pixel structure 300 may also be located in the middle part of each set of sensing pixel structures, adjacent to the two second sensing pixel structures 120; or the third sensing pixel structure The structures 300 may be arranged not adjacent to the second sensing pixel structures 120 but interspersed. Those skilled in the art can adjust the number and arrangement of the third sensing pixel structures 300 according to design requirements, and the present invention is not limited thereto.

In this embodiment, the third sensing pixel structure 300 may have a different structure design from the first sensing pixel structure 110 and the second sensing pixel structure 120 to provide different sensing functions. For example, the third sensing pixel structure 300 can adjust the initial light of the first waveform to the third sensing light having the third waveform to sense the third sensing light. Through the first sensing pixel structure 110 , the second sensing pixel structure 120 and the third sensing pixel structure 300 to sense the sensing light of different waveforms respectively, more kinds of identification signals can be generated, thereby improving the sensing Correctness of device 20.

Hereinafter, the embodiments applicable to the first sensing pixel structure, the second sensing pixel structure and the third sensing pixel structure in the above-mentioned embodiments will be exemplified, but the present invention is not limited to the following embodiments .

FIG. 4A is a schematic diagram of a first embodiment of the cross-section along the line I-I' in the sensing device of FIG. 3 . It must be noted here that FIG. 4A uses the element numbers and part of the content of the embodiment in FIG. 2A , wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

In this embodiment, the difference between the sensing device 20A shown in FIG. 4A and the sensing device 10A shown in FIG. 2A is that the sensing device 20A is replaced by a third sensing pixel structure 300 for sensing The second sensing pixel structure 120C of the device 10A. Specifically, the sensing pixel array structure SS of the sensing device 20A includes, for example, a first sensing pixel structure 110 , a second sensing pixel structure 120A, a second sensing pixel structure 120B, and a third sensing pixel structure 120B. Elemental structure 300. In other embodiments, the third sensing pixel structure 300 may replace the second sensing pixel structure 120A, the second sensing pixel structure 120B, the second sensing pixel structure 120C or the above sensing pixel structures The combination of the two is not limited in the present invention.

In this embodiment, each of the third sensing pixel structures 300 of the sensing pixel array structure SS may include a third sensing element 302 and a color filter layer 304 . The third sensing pixel structure 300 may not include a light conversion layer or a light conversion material, such as quantum dots, phosphors, and the like. The color filter layer 304 has filter properties, and can be used for shielding and/or absorbing light in a specific wavelength range, while allowing only light in another specific wavelength range to pass. That is, the color filter layer 304 can shield and/or absorb a portion of the initial light 210 of the first waveform and pass another portion of the initial light 210 of the first waveform. In one embodiment, the color filter layer 304 may be any color filter layer known to those of ordinary skill in the art for use in sensing devices. Therefore, the third sensing pixel structure 300 is suitable for adjusting the initial light 210 of the first waveform into the third sensing light 310 to provide the third sensing element 302 for sensing, wherein the third sensing light 310 has the third sensing light 310 . The three waveforms are different from the first waveform that the initial light 210 has.

In this embodiment, the third sensing pixel structure 300 further includes a light collimation structure LS and a lens ML sequentially stacked on the third sensing element 302 . Specifically, for the structural design and configuration relationship between the light collimation structure LS and the lens ML, reference may be made to the descriptions of the foregoing embodiments, and will not be repeated.

The color filter layer 304 of the third sensing pixel structure 300 is, for example, located between the third sensing element 302 and the light emitting panel 200 . In this embodiment, the color filter layer 304, for example, fills the second opening V2 of the second light shielding layer BM2, and covers part of the top surface of the second light shielding layer BM2, but the invention is not limited thereto. In other embodiments, the color filter layer 304 and the second light shielding layer BM2 may be separated by a distance; or in the case where the third insulating layer 134 is a multi-layer structure, at least one layer of the multi-layer structure may be separated, as long as the color The filter layer 304 only needs to be located on the traveling path of the initial light 210 of the first waveform.

In this embodiment, the third sensing light 310 includes only a part of the initial light 210 passing through the color filter layer 304 . According to the filter characteristics of the third sensing pixel structure 300 , the third sensing pixel structure 300 can only allow light within a short wavelength range, a medium wavelength range or a long wavelength range to pass through. For example, the first waveform of the initial light 210 is divided into a first short wavelength portion 212, a first long wavelength portion 214 and a first medium wavelength portion 216 and the third sensing pixel structure 300 allows only the first short wavelength portion When the light from 212 passes through, the first long wavelength portion 214 and the first medium wavelength portion 216 are shielded and/or absorbed by the color filter layer 304 , and only the first short wavelength portion 212 can pass through the color filter layer 304 It is sensed by the third sensing element 302 as the third sensing light 310 . In this way, after the initial light 210 of the first waveform passes through the color filter layer 304 , only the first short wavelength portion 212 remains and can be provided to the third sensing element 302 . Compared with the second sensing element 122 of the second sensing pixel structure 120 , the third sensing element 302 receives a relatively small amount of light, but may receive light with a relatively concentrated wavelength range. Therefore, with the combination of the second sensing pixel structure 120 and the third sensing pixel structure 300, multiple sensing signals can be obtained, which helps to improve the accuracy of the identification result. In some embodiments, the first short-wavelength portion 212 , the first long-wavelength portion 214 and the first medium-wavelength portion 216 appear as blue, red, and green, respectively, and the third sensing light 310 appears as blue, but not in This is limited. In other embodiments, the color filter layer 304 may allow only the first long wavelength portion 214 to pass through, or only the first mid-wavelength portion 216 based on material selection.

Based on the above, by matching the second sensing pixel structure with the light conversion layer and the third sensing pixel structure with the color filter layer, it can be used to discriminate different anti-counterfeiting identification information, so as to increase the discrimination of the sensing device 20A information types, so as to improve the accuracy of the identification results.

FIG. 4B is a schematic diagram of a second embodiment of the cross section along the line I-I' in the sensing device of FIG. 3 . It must be noted here that FIG. 4B uses the element numbers and part of the content of the embodiment in FIG. 4A , wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

In this embodiment, the difference between the sensing device 20B shown in FIG. 4B and the sensing device 20A shown in FIG. 4A is that the light conversion layer 124 is located between the light emitting panel 200 and the lens ML. Specifically, the light conversion layer 124A of the second sensing pixel structure 120A and the light conversion layer 124B of the second sensing pixel structure 120B are located between the light emitting panel 200 and the lens ML. In this way, the scattered light caused by the light conversion layer 124A and the light conversion layer 124B can first pass through the lens ML, the second opening V2 and the first opening V1 to improve the collimation, so that the second sensing element 122A and the first opening V1 can be collimated. The two sensing elements 122B can obtain fingerprint signals of good quality, so that the sensing device 20B has a good fingerprint anti-counterfeiting effect.

FIG. 4C is a schematic diagram of a third embodiment of the cross section along line I-I' in the sensing device of FIG. 3 . It must be noted here that FIG. 4C uses the element numbers and part of the content of the embodiment of FIG. 4A , wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

In this embodiment, the difference between the sensing device 20C shown in FIG. 4C and the sensing device 20A shown in FIG. 4A is that the light conversion layer 124 is disposed on the surface MLa of the lens ML. Specifically, the light conversion layer 124A of the second sensing pixel structure 120A and the light conversion layer 124B of the second sensing pixel structure 120B are disposed on the surface MLa of the lens ML. In this way, the scattered light caused by the light conversion layer 124A and the light conversion layer 124B directly passes through the lens ML to improve the collimation degree, and then further improves the collimation degree through the second opening V2 and the first opening V1, thereby The sensing device 20C has a good fingerprint anti-counterfeiting effect.

In some optional embodiments, the light conversion layer 124A and the light conversion layer 124B may be located in the same film layer position as the color filter layer 304 , that is, between the third insulating layer 134 and the second light shielding layer BM2 .

To sum up, the sensing device of the present invention can sense sensing light of different waveforms to generate different identification signals by setting the first sensing pixel structure and at least one second sensing pixel structure. In this way, the sensing device can analyze different signals through an algorithm to determine whether the fingerprint signal sensed by the sensing pixel array structure is abnormal, so as to identify the authenticity of the obtained fingerprint signal. In addition, the initial light is adjusted to sensing light with different waveforms by the light conversion layer of the second sensing pixel structure, which can improve the signal strength and sensing sensitivity received by the sensing element while avoiding the loss of light quantity. and sensing efficiency, thereby improving the quality of the sensing device and enhancing the fingerprint anti-counterfeiting effect.

Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.

10, 10A, 10B, 10C, 20, 20A, 20B, 20C: Sensing device 100: Substrate 110: First sensing pixel structure 112: The first sensing element 120, 120A, 120B, 120C: the second sensing pixel structure 122, 122A, 122B, 122C: the second sensing element 124, 124A, 124B, 124C: light conversion layer 130: first insulating layer 132: Second insulating layer 134: The third insulating layer 200: Luminous Panel 200a: Front side 200b: Dorsal 210: Initial Light 212: First short wavelength part 214: first long wavelength part 216: first mid-wavelength part 220, 220A, 220B, 220C: the second sensing light 222: First converted light 224: Second converted light 226: Third Conversion Light 300: The third sensing pixel structure 302: The third sensing element 304: Color filter layer 310: The third sensing light BM1: first light shielding layer BM2: Second light shielding layer BM3: The third shading layer D1: first direction D2: Second direction F: finger LS: light collimation structure ML: Lens MLa: Surface SS: Sensing pixel array structure V1: The first opening V2: Second opening V3: Third opening

FIG. 1 is a schematic top view of a sensing device according to an embodiment of the present invention. FIG. 2A is a schematic diagram of a first embodiment of a cross section along line I-I' in the sensing device of FIG. 1 . FIG. 2B is a schematic diagram of a second embodiment of the cross section along line I-I' in the sensing device of FIG. 1 . FIG. 2C is a schematic diagram of a third embodiment of the cross section along line I-I' of the sensing device of FIG. 1 . FIG. 3 is a schematic top view of a sensing device according to another embodiment of the present invention. FIG. 4A is a schematic diagram of a first embodiment of the cross-section along the line I-I' in the sensing device of FIG. 3 . FIG. 4B is a schematic diagram of a second embodiment of the cross section along the line I-I' in the sensing device of FIG. 3 . FIG. 4C is a schematic diagram of a third embodiment of the cross section along line I-I' in the sensing device of FIG. 3 .

10A: Sensing device

100: Substrate

110: First sensing pixel structure

112: The first sensing element

120, 120A, 120B, 120C: the second sensing pixel structure

122, 122A, 122B, 122C: the second sensing element

124, 124A, 124B, 124C: light conversion layer

130: first insulating layer

132: Second insulating layer

134: The third insulating layer

200: Luminous Panel

200a: Front side

200b: Dorsal

210: Initial Light

212: First short wavelength part

214: first long wavelength part

216: first mid-wavelength part

220, 220A, 220B, 220C: the second sensing light

222: First converted light

224: Second converted light

226: Third Conversion Light

BM1: first light shielding layer

BM2: Second light shielding layer

BM3: The third shading layer

F: finger

LS: light collimation structure

ML: Lens

SS: Sensing pixel array structure

V1: The first opening

V2: Second opening

V3: Third opening

Claims (10)

A sensing device, comprising: a light emitting panel adapted to emit the initial light of the first waveform; and The sensing pixel array structure is located on the back side of the light-emitting panel, wherein The sensing pixel array structure includes: a plurality of first sensing pixel structures, each of the first sensing pixel structures includes a first sensing element, and each of the first sensing pixel structures uses the initial light of the first waveform as the The first sensing light is provided to the first sensing element for sensing, wherein the proportion of the configuration area of the plurality of first sensing pixel structures to the entire sensing pixel array structure is more than 90% but less than 100% %;as well as At least one second sensing pixel structure, the at least one second sensing pixel structure includes a second sensing element and a light conversion layer, the light conversion layer is located between the second sensing element and the light emitting panel and the at least one second sensing pixel structure is adapted to adjust the initial light of the first waveform into a second sensing light to provide the second sensing element for sensing, and the The second sensing light has a second waveform different from the first waveform, The light conversion layer has an excitation peak wavelength and the excitation peak wavelength is in the range of 400 nm to 750 nm. The sensing device of claim 1, wherein the light conversion layer comprises quantum dots. The sensing device of claim 1, wherein the second sensed light includes converted light obtained by converting a portion of the initial light of the first waveform via the light conversion layer and passing through the light conversion layer The other portion of the initial light of the first waveform that has not been converted by the light conversion layer. The sensing device of claim 1, wherein the at least one second sensing pixel structure further comprises a light collimating structure and a lens sequentially stacked on the second sensing element. The sensing device of claim 4, wherein the light conversion layer of the at least one second sensing pixel structure is located between the lens and the sensing element. The sensing device of claim 4, wherein the light conversion layer of the at least one second sensing pixel structure is located between the light emitting panel and the lens. The sensing device according to claim 1, further comprising at least one third sensing pixel structure, the at least one third sensing pixel structure comprising a third sensing element and a color filter layer, the color filter The light layer is located between the third sensing element and the light emitting panel, and the at least one third sensing pixel structure is adapted to adjust the initial light of the first waveform into a third sensing light to The third sensing element is provided for sensing, and the third sensing light has a third waveform different from the first waveform. The sensing device according to claim 7, wherein the proportion of the at least one second sensing pixel structure and the at least one third sensing pixel structure in the overall configuration area of the sensing pixel array structure is: Less than 10%, but more than 0%. The sensing device of claim 1, wherein the first waveform is in a wavelength range of 400 nm to 700 nm. A sensing device, comprising: The sensing pixel array structure includes a plurality of first sensing pixel structures and at least one second sensing pixel structure arranged in an array, wherein, The proportion of the configuration area of the plurality of first sensing pixel structures in the entire sensing pixel array structure is more than 90% but less than 100%, Each of the first sensing pixel structures includes a first sensing element, and each of the first sensing pixel structures provides the first sensing light with the initial light of the first waveform as a first sensing light the sensing element senses, and The at least one second sensing pixel structure includes a second sensing element, and the at least one second sensing pixel structure is adapted to adjust the initial light of the first waveform into a second sensing light to The second sensing element is provided for sensing, and the second sensing light has a second waveform different from the first waveform.

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