TWI806280B - Optical sensing device - Google Patents
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Abstract
Description
本發明是有關於一種感測裝置,且特別是有關於一種光學感測裝置。The present invention relates to a sensing device, and in particular to an optical sensing device.
為了建構智慧生活的環境,感測技術已廣泛應用於各式電子裝置中。舉例而言,手機及電子鎖等裝置採用指紋感測器來保護個人數據安全及門禁管制。就實際應用需求而言,指紋感測器需搭配光準直設計,例如,使用遮光層來限制感測元件的收光角度,同時搭配使用有機材料來堆疊足夠的厚度,以利微透鏡聚焦及光線的準直化,目的是為了得到更清晰的指紋影像。In order to construct a smart living environment, sensing technology has been widely used in various electronic devices. For example, devices such as mobile phones and electronic locks use fingerprint sensors to protect personal data security and access control. In terms of practical application requirements, the fingerprint sensor needs to be designed with light collimation, for example, use a light-shielding layer to limit the light-receiving angle of the sensing element, and use organic materials to stack enough thickness to facilitate micro-lens focusing and The purpose of collimating the light is to obtain a clearer fingerprint image.
由於有機厚膜易於製程過程中因溫度變化而出現翹曲,故目前採用斷膜的設計來釋放有機厚膜中的應力,以解決翹曲的問題。然而,此斷膜的設計卻會在後續製程過程中因破真空的壓力變化而使氣體衝入斷膜處,造成框膠穿刺或斷線,導致生產良率不佳。Since the organic thick film is prone to warping due to temperature changes during the manufacturing process, the design of breaking the film is currently used to release the stress in the organic thick film to solve the problem of warping. However, the design of this film break will cause gas to rush into the film break due to the pressure change of breaking the vacuum during the subsequent process, causing the frame glue to puncture or break, resulting in poor production yield.
本發明提供一種光學感測裝置,具有提高的生產良率。The invention provides an optical sensing device with improved production yield.
本發明的一個實施例提出一種光學感測裝置,具有感測區及圍繞感測區的非感測區,且包括:基板;感測元件層,位於基板上,且包括位於感測區的多個感測元件;第一平坦層,位於感測元件層上,且具有第一狹縫;以及第二平坦層,位於第一平坦層上,且具有第二狹縫,其中,沿相同方向延伸的第一狹縫與第二狹縫於基板的正投影不重疊,且第二狹縫的位於非感測區的部分於基板的正投影呈現曲線圖案。An embodiment of the present invention proposes an optical sensing device, which has a sensing area and a non-sensing area surrounding the sensing area, and includes: a substrate; a sensing element layer located on the substrate, and including multiple sensors located in the sensing area a sensing element; a first planar layer, located on the sensing element layer, and having a first slit; and a second planar layer, located on the first planar layer, and having a second slit, wherein, extending in the same direction Orthographic projections of the first slit and the second slit on the substrate do not overlap, and the orthographic projection of the part of the second slit located in the non-sensing area on the substrate presents a curved pattern.
在本發明的一實施例中,上述的第二狹縫的位於感測區的部分於基板的正投影呈現直線圖案。In an embodiment of the present invention, the orthographic projection of the portion of the second slit located in the sensing region on the substrate presents a straight line pattern.
在本發明的一實施例中,上述的第一平坦層還具有位於非感測區的第一溝槽,第二平坦層還具有位於非感測區的第二溝槽,且第一溝槽於基板的正投影重疊第二溝槽於基板的正投影。In an embodiment of the present invention, the above-mentioned first flat layer further has a first groove located in the non-sensing area, the second flat layer further has a second groove located in the non-sensing area, and the first groove The orthographic projection of the second trench on the substrate is superimposed on the orthographic projection of the substrate.
在本發明的一實施例中,上述的第一狹縫沿第一方向及第二方向延伸貫穿第一平坦層,且第一方向與第二方向相互垂直。In an embodiment of the present invention, the above-mentioned first slit extends through the first flat layer along the first direction and the second direction, and the first direction and the second direction are perpendicular to each other.
在本發明的一實施例中,上述的第二狹縫沿第一方向及第二方向延伸貫穿第二平坦層,且第一方向與第二方向相互垂直。In an embodiment of the present invention, the above-mentioned second slit extends through the second flat layer along the first direction and the second direction, and the first direction and the second direction are perpendicular to each other.
在本發明的一實施例中,上述的曲線圖案為S形曲線圖案或鋸齒狀圖案。In an embodiment of the present invention, the above-mentioned curved pattern is an S-shaped curved pattern or a zigzag pattern.
在本發明的一實施例中,上述的第一狹縫以及第二狹縫的總面積佔光學感測裝置的總面積的0.05%至6%。In an embodiment of the present invention, the total area of the above-mentioned first slit and the second slit accounts for 0.05% to 6% of the total area of the optical sensing device.
在本發明的一實施例中,上述的光學感測裝置還包括第一遮光層,位於感測元件層上,且具有多個第一開口,其中,各第一開口於基板的正投影重疊各感測元件於基板的正投影。In an embodiment of the present invention, the above-mentioned optical sensing device further includes a first light-shielding layer located on the sensing element layer and having a plurality of first openings, wherein the orthographic projection of each first opening on the substrate overlaps each The orthographic projection of the sensing element on the substrate.
在本發明的一實施例中,上述的光學感測裝置還包括第二遮光層,位於第一平坦層上,且具有多個第二開口,其中,各第二開口於基板的正投影重疊各感測元件於基板的正投影。In an embodiment of the present invention, the above-mentioned optical sensing device further includes a second light-shielding layer, which is located on the first flat layer and has a plurality of second openings, wherein the orthographic projection of each second opening on the substrate overlaps each The orthographic projection of the sensing element on the substrate.
在本發明的一實施例中,上述的光學感測裝置還包括多個微透鏡結構,位於第二平坦層上,且各微透鏡結構於基板的正投影重疊各感測元件於基板的正投影。In an embodiment of the present invention, the above-mentioned optical sensing device further includes a plurality of microlens structures located on the second flat layer, and the orthographic projections of each microlens structure on the substrate overlap the orthographic projections of each sensing element on the substrate .
本發明的另一個實施例提出一種光學感測裝置,具有感測區及圍繞感測區的非感測區,且包括:第一基板;感測元件層,位於第一基板上,且包括位於感測區的多個感測元件;第一平坦層,位於感測元件層上,且具有位於感測區的第一狹縫及位於非感測區的第一溝槽;以及第二平坦層,位於第一平坦層上,且具有位於感測區的第二狹縫及位於非感測區的第二溝槽,其中,沿相同方向延伸的第一狹縫與第二狹縫於第一基板的正投影不重疊,且第一溝槽於第一基板的正投影重疊第二溝槽於第一基板的正投影。Another embodiment of the present invention provides an optical sensing device, which has a sensing area and a non-sensing area surrounding the sensing area, and includes: a first substrate; a sensing element layer located on the first substrate, and including A plurality of sensing elements in the sensing area; a first planar layer, located on the sensing element layer, and having a first slit located in the sensing area and a first groove located in the non-sensing area; and a second planar layer , located on the first flat layer, and has a second slit located in the sensing area and a second groove located in the non-sensing area, wherein the first slit and the second slit extending in the same direction are located in the first The orthographic projections of the substrates do not overlap, and the orthographic projections of the first trench on the first substrate overlap the orthographic projections of the second trench on the first substrate.
在本發明的一實施例中,上述的第一狹縫還延伸至非感測區且連接第一溝槽。In an embodiment of the present invention, the above-mentioned first slit further extends to the non-sensing area and connects to the first trench.
在本發明的一實施例中,上述的第二狹縫還延伸至非感測區且連接第二溝槽。In an embodiment of the present invention, the above-mentioned second slit also extends to the non-sensing area and connects to the second groove.
在本發明的一實施例中,上述的第一溝槽及第二溝槽於第一基板的正投影呈現環狀圖案。In an embodiment of the present invention, the orthographic projection of the above-mentioned first groove and the second groove on the first substrate presents a ring pattern.
在本發明的一實施例中,上述的光學感測裝置還包括第三平坦層,位於感測元件層與第一平坦層之間,且第三平坦層具有位於感測區的第三狹縫及位於非感測區的第三溝槽,其中,沿相同方向延伸的第一狹縫、第二狹縫以及第三狹縫於第一基板的正投影不重疊,且第三溝槽於第一基板的正投影重疊第一溝槽及第二溝槽於第一基板的正投影。In an embodiment of the present invention, the above-mentioned optical sensing device further includes a third flat layer located between the sensing element layer and the first flat layer, and the third flat layer has a third slit located in the sensing region and the third groove located in the non-sensing area, wherein the orthographic projections of the first slit, the second slit and the third slit extending in the same direction on the first substrate do not overlap, and the third groove is located in the first substrate The orthographic projection of a substrate overlaps the orthographic projections of the first groove and the second groove on the first substrate.
在本發明的一實施例中,上述的光學感測裝置還包括第二基板,與第一基板相對,且感測元件層、第一平坦層以及第二平坦層位於第二基板與第一基板之間。In an embodiment of the present invention, the above-mentioned optical sensing device further includes a second substrate opposite to the first substrate, and the sensing element layer, the first flat layer and the second flat layer are located between the second substrate and the first substrate. between.
在本發明的一實施例中,上述的光學感測裝置還包括色阻圖案,位於第二基板與第二平坦層之間。In an embodiment of the present invention, the above-mentioned optical sensing device further includes a color-resist pattern located between the second substrate and the second flat layer.
在本發明的一實施例中,上述的光學感測裝置還包括間隙物,位於第二基板與第二平坦層之間。In an embodiment of the present invention, the above-mentioned optical sensing device further includes a spacer located between the second substrate and the second planar layer.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反地,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」或「耦接」可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.
應當理解,儘管術語「第一」、「第二」、「第三」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、層及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的第一「元件」、「部件」、「區域」、「層」或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.
這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式「一」、「一個」和「該」旨在包括複數形式,包括「至少一個」或表示「及/或」。如本文所使用的,術語「及/或」包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語「包含」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件及/或部件的存在,但不排除一個或多個其它特徵、區域、整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include plural forms including "at least one" or meaning "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprising" and/or "comprising" designate the existence of said features, regions, integers, steps, operations, elements and/or components, but do not exclude one or more Existence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「下」或「下方」可以包括上方和下方的取向。Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "below" can encompass both an orientation of "below" and "upper," depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.
考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制),本文使用的「約」、「近似」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值。例如,「約」可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的「約」、「近似」、或「實質上」可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。The terms "about," "approximately," or "substantially" as used herein include stated values and those within ordinary skill in the art, taking into account the measurements in question and the specific amount of error associated with the measurements (i.e., limitations of the measurement system). The average value within an acceptable range of deviation from a specified value as determined by a human being. For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, "about", "approximately", or "substantially" used herein may select a more acceptable range of deviation or standard deviation based on optical properties, etching properties or other properties, and may not use one standard deviation to apply to all nature.
本文參考作為理想化實施例的示意圖的截面圖來描述示例性實施例。因此,可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此,本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀,而是包括例如由製造導致的形狀偏差。例如,示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外,所示的銳角可以是圓的。因此,圖中所示的區域本質上是示意性的,並且它們的形狀不是旨在示出區域的精確形狀,並且不是旨在限制權利要求的範圍。Exemplary embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat, may, typically, have rough and/or non-linear features. Additionally, acute corners shown may be rounded. Thus, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.
圖1A是依照本發明一實施例的光學感測裝置10的上視示意圖。圖1B是圖1A的光學感測裝置10的區域I的放大示意圖。圖1C是沿圖1B的剖面線A-A’所作的剖面示意圖。圖1D是沿圖1A的剖面線B-B’所作的剖面示意圖。圖1E是沿圖1A的剖面線C-C’所作的剖面示意圖。為了使圖式的表達較為簡潔,圖1A示意性繪示光學感測裝置10的基板SB1、框膠FG、狹縫ST1、ST2以及切割道CL,並省略其他構件。FIG. 1A is a schematic top view of an
首先,請同時參照圖1A至圖1C,光學感測裝置10包括:基板SB1;感測元件層SE,位於基板SB1上,且包括多個感測元件SC;平坦層PL1,位於感測元件層SE上,且具有狹縫ST1;以及平坦層PL2,位於平坦層PL1上,且具有狹縫ST2,其中,沿相同方向延伸的狹縫ST1與狹縫ST2於基板SB1的正投影不重疊,且狹縫ST2於基板SB1的正投影呈現曲線的圖案。First, please refer to FIGS. 1A to 1C at the same time. The
在本發明的一實施例的光學感測裝置10中,藉由使平坦層PL2中的狹縫ST2呈現曲線的圖案,能夠阻礙氣體衝入狹縫ST2中,藉以防止氣衝造成的框膠穿刺或斷線問題,從而提高光學感測裝置10的生產良率。In the
以下,配合圖1A至圖1E,繼續說明光學感測裝置10的各個元件的實施方式,但本發明不以此為限。Hereinafter, with reference to FIG. 1A to FIG. 1E , the implementation of each element of the
請參照圖1A,在本實施例中,可以沿著切割道CL進行切割,而得到光學感測裝置10,且切割道CL可以位於相鄰的兩個光學感測裝置10之間。一般而言,光學感測裝置10可以具有感測區SA及非感測區NA,且非感測區NA可以圍繞感測區SA。另外,光學感測裝置10上還可以塗有框膠FG,且框膠FG可以圍繞感測區SA,框膠FG及其外側則可視為非感測區NA。在一些實施例中,非感測區NA還可以包括接合區BA,且接合區BA可以位於光學感測裝置10的一個側邊,例如,接合區BA可以位於光學感測裝置10的下側,如圖1A所示,但不以此為限。Referring to FIG. 1A , in this embodiment, the
光學感測裝置10的基板SB1可為可撓性基板或剛性基板,其材質可以是陶瓷基板、石英基板、玻璃基板、高分子基板或其他適合的材質,但不限於此。The substrate SB1 of the
請參照圖1C,在一些實施例中,光學感測裝置10還可以包括絕緣層IL,絕緣層IL可以設置於基板SB1與感測元件層SE之間。絕緣層IL的材料可為氧化矽、氮化矽、或上述至少二種材料的堆疊層,但不以此為限。Please refer to FIG. 1C , in some embodiments, the
在本實施例中,感測元件層SE中的感測元件SC可以位於感測區SA,且感測元件SC可以包括第一電極SC1、感光層SC2以及第二電極SC3。第一電極SC1、感光層SC2以及第二電極SC3例如以此順序依序堆疊於基板SB1上。在一些實施例中,第二電極SC3的面積大於感光層SC2的面積,且第一電極SC1與第二電極SC3的輪廓可局部重疊。在一些實施例中,第一電極SC1與第二電極SC3可包括透光的導電材料或不透光的導電材料,其視感測裝置100的用途而定。舉例而言,光學感測裝置10可作為屏下指紋感測器來使用,因此,來自外界的光(例如經指紋反射的光)會穿過第二電極SC3而入射至感光層SC2,基於此,第二電極SC3是使用透光的導電材料製作。感光層SC2具有將光能轉換為電能的特性,以實現光學感測的功能。在一些實施例中,感光層SC2的材料可包括富矽材料,其可為富矽氧化物、富矽氮化物、富矽氮氧化物、富矽碳化物、富矽碳氧化物、氫化富矽氧化物、氫化富矽氮化物、氫化富矽碳化物或其他合適的材料或上述材料的組合。In this embodiment, the sensing element SC in the sensing element layer SE may be located in the sensing area SA, and the sensing element SC may include a first electrode SC1 , a photosensitive layer SC2 and a second electrode SC3 . The first electrode SC1 , the photosensitive layer SC2 and the second electrode SC3 are sequentially stacked on the substrate SB1 in this order, for example. In some embodiments, the area of the second electrode SC3 is larger than the area of the photosensitive layer SC2, and the contours of the first electrode SC1 and the second electrode SC3 may partially overlap. In some embodiments, the first electrode SC1 and the second electrode SC3 may include a light-transmitting conductive material or a light-impermeable conductive material, which depends on the application of the sensing device 100 . For example, the
在一些實施例中,感測元件層SE還可以包括平坦層PLs。平坦層PLs例如位於感測元件SC的第一電極SC1與第二電極SC3之間。在一些實施例中,平坦層PLs具有暴露出感測元件SC的第一電極SC1的開口OP,其中感光層SC2位於開口OP中且接觸第一電極SC1,而第二電極SC3可設置於感光層SC2及平坦層PLs上且與感光層SC2接觸。In some embodiments, the sensing element layer SE may further include a planarization layer PLs. The flat layer PLs is, for example, located between the first electrode SC1 and the second electrode SC3 of the sensing element SC. In some embodiments, the flat layer PLs has an opening OP exposing the first electrode SC1 of the sensing element SC, wherein the photosensitive layer SC2 is located in the opening OP and contacts the first electrode SC1, and the second electrode SC3 can be disposed on the photosensitive layer. SC2 and the flat layer PLs and in contact with the photosensitive layer SC2.
請同時參照圖1A至圖1C,平坦層PL1的每一個狹縫ST1可以完全貫穿平坦層PL1,且平坦層PL2可以填入狹縫ST1中。換言之,狹縫ST1可以從光學感測裝置10一側的非感測區NA延伸穿過感測區SA,再延伸至對側的非感測區NA,而將平坦層PL1分割為分離的兩個區塊,如此一來,可有助於應力釋放。舉例而言,在本實施例中,平坦層PL1的狹縫ST1可以包括沿第一方向D1延伸的兩個狹縫ST1h及沿第二方向D2延伸的一個狹縫ST1v,且第一方向D1與第二方向D2可以相互垂直,使得平坦層PL1可被分割為分離的六個區塊。然而,狹縫ST1的延伸方向及數量並無特別限制。在一些實施例中,狹縫ST1的數量可以等於或大於1。在一些實施例中,狹縫ST1的延伸方向可以不同於第一方向D1及第二方向D2。在一些實施例中,狹縫ST1的縫寬W1可以介於5 μm至10 μm之間。Please refer to FIG. 1A to FIG. 1C at the same time, each slit ST1 of the flat layer PL1 can completely penetrate the flat layer PL1 , and the flat layer PL2 can be filled into the slit ST1 . In other words, the slit ST1 may extend from the non-sensing area NA on one side of the
類似地,平坦層PL2的每一個狹縫ST2可以完全貫穿平坦層PL2,而將平坦層PL2分割為分離的兩個區塊,以利於應力釋放。舉例而言,在本實施例中,平坦層PL2的狹縫ST2可以包括沿第一方向D1延伸的兩個狹縫ST2h以及沿第二方向D2延伸的一個狹縫ST2v,且第一方向D1與第二方向D2可以相互垂直,使得平坦層PL2可被分割為分離的六個區塊。然而,狹縫ST2的延伸方向及數量並無特別限制。在一些實施例中,狹縫ST2的數量可以等於或大於1。在一些實施例中,狹縫ST2的延伸方向可以不同於第一方向D1及第二方向D2。在一些實施例中,狹縫ST2的縫寬W2可以介於5 μm至10 μm之間。在一些實施例中,狹縫ST1、ST2的總面積可以佔光學感測裝置10的總面積的約0.05%至6%。Similarly, each slit ST2 of the flat layer PL2 can completely pass through the flat layer PL2 to divide the flat layer PL2 into two separate parts, so as to facilitate stress release. For example, in this embodiment, the slit ST2 of the flat layer PL2 may include two slits ST2h extending along the first direction D1 and one slit ST2v extending along the second direction D2, and the first direction D1 and The second directions D2 may be perpendicular to each other, so that the flat layer PL2 may be divided into six separate blocks. However, the extending direction and number of the slits ST2 are not particularly limited. In some embodiments, the number of slits ST2 may be equal to or greater than one. In some embodiments, the extending direction of the slit ST2 may be different from the first direction D1 and the second direction D2. In some embodiments, the width W2 of the slit ST2 may be between 5 μm and 10 μm. In some embodiments, the total area of the slits ST1 , ST2 may account for about 0.05% to 6% of the total area of the
在本實施例中,沿第二方向D2延伸的狹縫ST1v、ST2v於基板SB1的正投影不重疊。同樣地,在本實施例中,沿第一方向D1延伸的狹縫ST1h、ST2h於基板SB1的正投影不重疊。如此一來,可以避免影響平坦層PL1、PL2的整體平坦度。In this embodiment, the orthographic projections of the slits ST1v and ST2v extending along the second direction D2 on the substrate SB1 do not overlap. Likewise, in this embodiment, the orthographic projections of the slits ST1h and ST2h extending along the first direction D1 on the substrate SB1 do not overlap. In this way, it is possible to avoid affecting the overall flatness of the flat layers PL1, PL2.
在一些實施例中,光學感測裝置10還可以包括平坦層PL3及遮光層BM1,且平坦層PL3可以位於平坦層PL1與感測元件層SE之間,而遮光層BM1例如可以位於平坦層PL1與平坦層PL3之間。詳細而言,遮光層BM1可以具有多個開口O1,且各開口O1於基板SB1的正投影可以重疊各感測元件SC於基板SB1的正投影。遮光層BM1的材料可以包括遮光及/或反射材料,其可為金屬、合金、前述材料的氮化物、前述材料的氧化物、前述材料的氮氧化物、或是其它合適的遮光及/或反射材料。在一些實施例中,遮光層BM1的材料可為鉬、氧化鉬或其堆疊層。遮光層BM1的設置能夠有效避免雜散光入射至感測元件SC,進而提高感測解析度。在本實施例中,開口O1與感測元件SC對應地設置,以使感測元件SC可將穿過開口O1的外界的光轉換為對應的電訊號。另外,在一些實施例中,設置有遮光層BM1的區域可用於遮蔽例如開關元件,以避免開關元件產生漏電的情況。In some embodiments, the
在一些實施例中,光學感測裝置10還可以包括遮光層BM2,且遮光層BM2可以位於平坦層PL1與平坦層PL2之間。詳細而言,遮光層BM2可以具有多個開口O2,且各開口O2於基板SB1的正投影可以重疊各感測元件SC於基板SB1的正投影。在本實施例中,開口O2與感測元件SC對應地設置,以使感測元件SC可將穿過開口O2的外界的光轉換為對應的電訊號。遮光層BM2的材料可以包括遮光及/或反射材料,其可為金屬、合金、前述材料的氮化物、前述材料的氧化物、前述材料的氮氧化物、或是其它合適的遮光及/或反射材料。在一些實施例中,遮光層BM2的材料可為鉬、氧化鉬或其堆疊層。另外,遮光層BM2亦可設置於狹縫ST1中,其可遮蔽來自外界的大角度的光(例如斜向光)且避免產生漏光的現象。舉例而言,當光學感測裝置10作為屏下指紋感測器的用途時,可避免斜向光對感測元件SC造成的雜散光干擾,藉此提高光的訊噪比以取得更清晰的指紋影像。此外,其亦能夠避免感測到的影像失真。In some embodiments, the
在一些實施例中,光學感測裝置10還可以包括平坦層PL4,平坦層PL4可以位於平坦層PL2上,且平坦層PL4可以填入平坦層PL2的狹縫ST2中。在一些實施例中,平坦層PLs、PL1、PL2、PL3、PL4可以包括例如有機材料層與無機材料層的堆疊層,其中,有機材料層可以包括例如聚亞醯胺、聚酯、苯並環丁烯(benzocyclobutene,BCB)、聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA)、聚乙烯苯酚(poly(4-vinylphenol),PVP)、聚乙烯醇(polyvinyl alcohol,PVA)、聚四氟乙烯(polytetrafluoroethene,PTFE)、六甲基二矽氧烷(hexamethyldisiloxane,HMDSO)或上述至少二種材料的堆疊層,但不以此為限,無機材料層可以包括例如氧化矽、氮化矽、氮氧化矽、或上述至少二種材料的堆疊層,但不以此為限。In some embodiments, the
在一些實施例中,光學感測裝置10還可以包括遮光層BM3,遮光層BM3可以位於平坦層PL4上,且遮光層BM3可以具有開口O3。遮光層BM3的材料可以包括遮光及/或反射材料,其可為金屬、合金、前述材料的氮化物、前述材料的氧化物、前述材料的氮氧化物、或是其它合適的遮光及/或反射材料。在一些實施例中,遮光層BM3的材料可為鉬、氧化鉬或其堆疊層。In some embodiments, the
在一些實施例中,光學感測裝置10還可以包括多個微透鏡結構ML,微透鏡結構ML可以位於遮光層BM3的開口O3中,且與感測元件SC對應地設置。舉例而言,多個微透鏡結構ML可以陣列的方式排列。在一些實施例中,每一微透鏡結構ML的中心軸可與對應的開口O1以及開口O2的中心軸重疊,以進一步提升光準直的效果。在一些實施例中,微透鏡結構ML可為對稱雙凸透鏡、非對稱雙凸透鏡、平凸透鏡或凹凸透鏡,但不以此為限。In some embodiments, the
在一些實施例中,光學感測裝置10還可以包括多個對頂物CP,對頂物CP可以與微透鏡結構ML屬於相同膜層,但對頂物CP可以不重疊感測元件SC。此外,對頂物CP可以具有各種形狀或尺寸,例如圖1C所示的半圓形或圖1D所示的正梯形,但不限於此。In some embodiments, the
在一些實施例中,光學感測裝置10還可以包括基板SB2,且基板SB2上可以設置色阻圖案CR,色阻圖案CR可以對應一部分的感測元件SC設置,用以提供防偽的功能。舉例而言,色阻圖案CR可以包括紅色色阻圖案Rr、綠色色阻圖案Rg以及藍色色阻圖案Rb,且紅色色阻圖案Rr、綠色色阻圖案Rg以及藍色色阻圖案Rb可以分別對應不同的感測元件SC設置。如此一來,對應不同色阻圖案CR的感測元件SC能夠測得不同波段的光感測訊號,以用於分辨感測對象的真偽。In some embodiments, the
另外,基板SB1、SB2可以在高真空下進行對組,且對組完成之後,基板SB2與基板SB1相對,使得感測元件層SE、平坦層PL1、PL2以及色阻圖案CR可以位於基板SB1、SB2之間,微透鏡結構ML可以位於基板SB2與平坦層PL2之間,且色阻圖案CR可以位於微透鏡結構ML與基板SB2之間。在一些實施例中,基板SB2上還可以設置間隙物SP,間隙物SP不重疊感測元件SC,且間隙物SP可與基板SB1上的對頂物CP對頂,從而使基板SB1、SB2在對組完成之後保持穩定的間距,同時避免微透鏡結構ML壓傷,進而提高光學感測裝置10的感測解析度。此外,間隙物SP可以具有各種形狀或尺寸,例如圖1D所示的尺寸不同的倒梯形,但不限於此。In addition, the substrates SB1 and SB2 can be grouped under high vacuum, and after the grouping is completed, the substrate SB2 is opposite to the substrate SB1, so that the sensing element layer SE, the flat layers PL1, PL2 and the color-resist pattern CR can be located on the substrate SB1, Between SB2, the microlens structure ML may be located between the substrate SB2 and the flat layer PL2, and the color resist pattern CR may be located between the microlens structure ML and the substrate SB2. In some embodiments, a spacer SP can also be provided on the substrate SB2, the spacer SP does not overlap the sensing element SC, and the spacer SP can be aligned with the counter object CP on the substrate SB1, so that the substrates SB1 and SB2 After the grouping is completed, a stable distance is maintained, and at the same time, crushing of the microlens structure ML is avoided, thereby improving the sensing resolution of the
請參照圖1B,在本實施例中,狹縫ST2的位於非感測區NA的部分(例如至少於重疊框膠FG的部分)於基板SB1的正投影可以呈現S形曲線圖案。如此一來,當基板SB1、SB2在對組完成之後破真空時,能夠對衝入狹縫ST2的氣體形成阻力,從而防止氣衝造成的框膠穿刺或斷線。在本實施例中,狹縫ST2的位於感測區SA的部分於基板SB1的正投影可以呈現直線圖案,但不限於此。在一些實施例中,狹縫ST2位於感測區SA的部分也可以呈現S形曲線圖案。Referring to FIG. 1B , in this embodiment, the orthographic projection of the portion of the slit ST2 located in the non-sensing area NA (for example, at least the portion less than the overlapping frame FG) on the substrate SB1 may present an S-shaped curve pattern. In this way, when the vacuum of the substrates SB1 and SB2 is broken after the assembly is completed, resistance can be formed to the gas rushing into the slit ST2, thereby preventing the sealant from being punctured or disconnected due to the gas shock. In this embodiment, the orthographic projection of the portion of the slit ST2 located in the sensing area SA on the substrate SB1 may present a straight line pattern, but is not limited thereto. In some embodiments, the portion of the slit ST2 located in the sensing area SA may also present an S-shaped curve pattern.
請同時參照圖1A及圖1D,在本實施例中,平坦層PL1還可以具有位於非感測區NA的溝槽T1,且溝槽T1於基板SB1的正投影可以呈現環狀的圖案。換言之,溝槽T1可以環繞光學感測裝置10。另外,平坦層PL2還可以具有位於非感測區NA的溝槽T2,溝槽T2於基板SB1的正投影可以呈現環狀的圖案,且溝槽T1於基板SB1的正投影可以完全重疊溝槽T2於基板SB1的正投影。也就是說,溝槽T2也可以環繞光學感測裝置10。此外,狹縫ST1可以連接溝槽T1,且狹縫ST2可以連接溝槽T2。Please refer to FIG. 1A and FIG. 1D at the same time. In this embodiment, the planar layer PL1 may also have a trench T1 located in the non-sensing area NA, and the orthographic projection of the trench T1 on the substrate SB1 may present a circular pattern. In other words, the trench T1 may surround the
在其他實施例中,平坦層PLs、PL3、PL4還可以分別具有溝槽Ts、T3、T4,且溝槽T3於基板SB1的正投影完全重疊溝槽T1於基板SB1的正投影,溝槽Ts於基板SB1的正投影完全重疊溝槽T3於基板SB1的正投影,溝槽T2於基板SB1的正投影完全重疊溝槽T4於基板SB1的正投影,使得溝槽Ts、T1、T2、T3、T4可以形成圖1A所示的切割道CL。如此一來,當對切割道CL進行切割時,溝槽Ts、T1、T2、T3、T4兩側的平坦層PLs、PL1、PL2、PL3、PL4可與對應的間隙物SP及對頂物CP構成支撐性良好且穩定而有利於進行切割的結構,藉以提升切割品質。In other embodiments, the flat layers PLs, PL3, and PL4 may also have trenches Ts, T3, and T4 respectively, and the orthographic projection of the trench T3 on the substrate SB1 completely overlaps the orthographic projection of the trench T1 on the substrate SB1, and the trench Ts The orthographic projection of the trench T3 on the substrate SB1 completely overlaps the orthographic projection of the trench T3 on the substrate SB1, and the orthographic projection of the trench T2 on the substrate SB1 completely overlaps the orthographic projection of the trench T4 on the substrate SB1, so that the trenches Ts, T1, T2, T3, T4 may form the scribe lines CL shown in FIG. 1A . In this way, when cutting the scribe line CL, the flat layers PLs, PL1, PL2, PL3, and PL4 on both sides of the trenches Ts, T1, T2, T3, and T4 can be aligned with the corresponding spacers SP and countertops CP. It constitutes a well-supported and stable structure that is conducive to cutting, so as to improve cutting quality.
在一些實施例中,平坦層PLs、PL1、PL2、PL3、PL4還可以分別具有位於非感測區NA的溝槽Tsa、T1a、T2a、T3a、T4a,其中溝槽Tsa、T1a、T2a、T3a、T4a於基板SB1的正投影可以分別位於溝槽Ts、T1、T2、T3、T4於基板SB1的正投影與框膠FG於基板SB1的正投影之間,且溝槽Tsa、T1a、T2a、T3a、T4a於基板SB1的正投影可以相互重疊,使得切割道CL兩側的平坦層PLs、PL1、PL2、PL3、PL4可與位於感測區SA的平坦層PLs、PL1、PL2、PL3、PL4斷開,如此一來,能夠避免在切割道CL進行切割時對感測區SA的膜層產生影響。In some embodiments, the planar layers PLs, PL1, PL2, PL3, PL4 can also have trenches Tsa, T1a, T2a, T3a, T4a located in the non-sensing area NA, respectively, wherein the trenches Tsa, T1a, T2a, T3a The orthographic projections of , T4a on the substrate SB1 can be respectively located between the orthographic projections of the grooves Ts, T1, T2, T3, T4 on the substrate SB1 and the orthographic projection of the frame glue FG on the substrate SB1, and the grooves Tsa, T1a, T2a, Orthographic projections of T3a and T4a on the substrate SB1 can overlap each other, so that the flat layers PLs, PL1, PL2, PL3, and PL4 on both sides of the scribe line CL can be aligned with the flat layers PLs, PL1, PL2, PL3, and PL4 located in the sensing area SA. In this way, it is possible to avoid affecting the film layer of the sensing area SA when the cutting line CL cuts.
在一些實施例中,如圖1D所示,框膠FG塗佈處可以設置有多組(例如圖示三組)間隙物SP及對頂物CP,以確保基板SB1與基板SB2之間能夠形成穩定的黏合結構。In some embodiments, as shown in FIG. 1D , multiple sets (for example, three sets in the figure) of spacers SP and countertops CP can be provided at the place where the sealant FG is coated, so as to ensure that the spacer SP and the countertop CP can be formed between the substrate SB1 and the substrate SB2. Stable adhesive structure.
請參照圖1E,在本實施例中,光學感測裝置10的接合區BA可以設置有多個接墊PD,接墊PD可以電性連接例如外部的驅動元件,以將驅動訊號傳遞至感測元件SC。另外,可於切割道CL兩側、於基板SB1上設置對頂物CP,且可於基板SB2上對應接墊PD及對頂物CP處分別設置層疊的黑色色阻圖案Rk、紅色色阻圖案Rr、綠色色阻圖案Rg、藍色色阻圖案Rb以及間隙物SP,以在切割道CL進行切割時提供輔助支撐。Please refer to FIG. 1E , in this embodiment, the bonding area BA of the
以下,使用圖2A至圖2D繼續說明本發明的其他實施例,並且,沿用圖1A至圖1E的實施例的元件標號與相關內容,其中,採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明,可參考圖1A至圖1E的實施例,在以下的說明中不再重述。In the following, other embodiments of the present invention are continued to be described using FIGS. 2A to 2D , and the element numbers and related contents of the embodiment in FIGS. 1A to 1E are used, wherein the same or similar elements are represented by the same numbers, and Descriptions of the same technical contents are omitted. For the description of the omitted parts, reference may be made to the embodiment shown in FIG. 1A to FIG. 1E , which will not be repeated in the following description.
圖2A是依照本發明一實施例的光學感測裝置20的上視示意圖。圖2B是圖2A的光學感測裝置20的區域II的放大示意圖。圖2C是沿圖2B的剖面線D-D’所作的剖面示意圖。圖2D是沿圖2A的剖面線E-E’所作的剖面示意圖。為了使圖式的表達較為簡潔,圖2A示意性繪示光學感測裝置20的基板SB1、框膠FG、狹縫ST1、ST2、ST3以及切割道CL,並省略其他構件。FIG. 2A is a schematic top view of an
請同時參照圖2A至圖2D,光學感測裝置20具有感測區SA及圍繞感測區SA的非感測區NA,且包括:基板SB1;感測元件層SE,位於基板SB1上,且包括位於感測區SA的多個感測元件SC;平坦層PL1,位於感測元件層SE上,且具有位於感測區SA的狹縫ST1及位於非感測區NA的溝槽T1;以及平坦層PL2,位於平坦層PL1上,且具有位於感測區SA的狹縫ST2及位於非感測區NA的溝槽T2,其中,沿相同方向延伸的狹縫ST1與狹縫ST2於基板SB1的正投影不重疊,且溝槽T1於基板SB1的正投影重疊溝槽T2於基板SB1的正投影。此外,光學感測裝置20還可以包括平坦層PLs、PL3、PL4、遮光層BM1、BM2、BM3、絕緣層IL、微透鏡結構ML、色阻圖案CR以及基板SB2。Please refer to FIG. 2A to FIG. 2D at the same time. The
與如圖1A至圖1E所示的光學感測裝置10相比,圖2A至圖2D所示的光學感測裝置20的不同之處在於:光學感測裝置20的平坦層PL3還具有狹縫ST3,且平坦層PL2的狹縫ST2的位於非感測區NA的部分可以呈現鋸齒狀圖案。Compared with the
在本實施例中,平坦層PL3的每一個狹縫ST3可以完全貫穿平坦層PL3,以有助於應力釋放。換言之,狹縫ST3可以從光學感測裝置20一側的非感測區NA延伸穿過感測區SA,再延伸至對側的非感測區NA,而將平坦層PL3分割為分離的兩個區塊,且遮光層BM1以及平坦層PL1可以填入狹縫ST3中。舉例而言,在本實施例中,平坦層PL3的狹縫ST3可以包括沿第一方向D1延伸的兩個狹縫ST3h以及沿第二方向D2延伸的一個狹縫ST3v,且第一方向D1與第二方向D2可以相互垂直,使得平坦層PL3可被分割為分離的六個區塊。然而,狹縫ST3的延伸方向及數量並無特別限制。在一些實施例中,狹縫ST3的數量可以等於或大於1。在一些實施例中,狹縫ST3的延伸方向可以不同於第一方向D1及第二方向D2。In this embodiment, each slit ST3 of the flat layer PL3 can completely penetrate the flat layer PL3 to facilitate stress release. In other words, the slit ST3 may extend from the non-sensing area NA on one side of the
另外,在本實施例中,狹縫ST2至少於重疊框膠FG的部分呈現鋸齒狀圖案。如此一來,當基板SB1、SB2在對組完成之後破真空時,能夠對衝入狹縫ST2的氣體形成阻力,從而防止氣衝造成框膠穿刺或斷線問題。在一些實施例中,狹縫ST2位於感測區SA的部分也可以呈現鋸齒狀圖案。In addition, in this embodiment, at least the portion of the slit ST2 that is less than the overlapping sealant FG presents a zigzag pattern. In this way, when the vacuum of the substrates SB1 and SB2 is broken after the assembly is completed, resistance can be formed to the gas rushing into the slit ST2, thereby preventing the sealant from being punctured or disconnected due to the gas shock. In some embodiments, the portion of the slit ST2 located in the sensing area SA may also exhibit a zigzag pattern.
請同時參照圖2A及圖2D,在本實施例中,平坦層PL3還可以具有位於非感測區NA的溝槽T3,且溝槽T3於基板SB1的正投影可以重疊溝槽T1及溝槽T2於基板SB1的正投影。換言之,溝槽T3可以環繞光學感測裝置10,且溝槽T3於基板SB1的正投影可以呈現環狀的圖案。另外,狹縫ST3可以連接溝槽T3。Please refer to FIG. 2A and FIG. 2D at the same time. In this embodiment, the flat layer PL3 can also have a trench T3 located in the non-sensing area NA, and the orthographic projection of the trench T3 on the substrate SB1 can overlap the trench T1 and the trench. Orthographic projection of T2 onto substrate SB1. In other words, the trench T3 can surround the
在本實施例中,平坦層PLs、PL4並未設置於切割道CL兩側,且溝槽T1、T2、T3可以構成圖2A所示的切割道CL。在一些實施例中,平坦層PL1、PL2、PL3還可以分別具有位於非感測區NA的溝槽T1a、T2a、T3a,其中溝槽、T1a、T2a、T3a於基板SB1的正投影可以分別位於溝槽T1、T2、T3於基板SB1的正投影與框膠FG於基板SB1的正投影之間,且溝槽T1a、T2a、T3a於基板SB1的正投影可以相互重疊,使得切割道CL兩側的平坦層PL1、PL2、PL3可與位於感測區SA的平坦層PL1、PL2、PL3斷開,以避免在切割道CL進行切割時對感測區SA的膜層產生影響。另外,可於溝槽T2兩側的平坦層PL2上設置對頂物CP,且可於基板SB2上對應對頂物CP處分別設置層疊的黑色色阻圖案Rk、紅色色阻圖案Rr、綠色色阻圖案Rg、藍色色阻圖案Rb以及間隙物SP。如此一來,當對切割道CL進行切割時,切割道CL兩側的平坦層PL1、PL2、PL3以及對頂物CP可與對應的黑色色阻圖案Rk、紅色色阻圖案Rr、綠色色阻圖案Rg、藍色色阻圖案Rb以及間隙物SP的疊層構成支撐性良好且穩定而有利於進行切割的結構,藉以提升切割品質。In this embodiment, the planar layers PLs and PL4 are not disposed on both sides of the scribe line CL, and the trenches T1 , T2 , T3 can constitute the scribe line CL shown in FIG. 2A . In some embodiments, the flat layers PL1, PL2, and PL3 can also have trenches T1a, T2a, and T3a respectively located in the non-sensing area NA, wherein the orthographic projections of the trenches, T1a, T2a, and T3a on the substrate SB1 can be located at Between the orthographic projections of the grooves T1, T2, and T3 on the substrate SB1 and the orthographic projection of the sealant FG on the substrate SB1, and the orthographic projections of the grooves T1a, T2a, and T3a on the substrate SB1 can overlap each other, so that both sides of the scribe line CL The planar layers PL1 , PL2 , PL3 in the sensing area SA can be disconnected from the planar layers PL1 , PL2 , PL3 in the sensing area SA, so as to avoid affecting the film layer of the sensing area SA when the scribe line CL performs cutting. In addition, countertops CP can be provided on the flat layer PL2 on both sides of the trench T2, and stacked black color-resist patterns Rk, red color-resist patterns Rr, and green color-resist patterns can be respectively provided on the substrate SB2 corresponding to the countertops CP. The resist pattern Rg, the blue color resist pattern Rb and the spacer SP. In this way, when cutting the scribe line CL, the flat layers PL1, PL2, PL3 and the counter object CP on both sides of the scribe line CL can be matched with the corresponding black color-resist pattern Rk, red color-resist pattern Rr, green color-resist pattern The stacked layers of the pattern Rg, the blue color resist pattern Rb and the spacer SP form a structure with good support and stability, which is favorable for cutting, so as to improve cutting quality.
綜上所述,本發明的光學感測裝置藉由使平坦層中的狹縫呈現曲線的圖案,能夠防止氣衝造成的框膠穿刺或斷線問題,從而提高光學感測裝置的生產良率。另外,本發明的光學感測裝置藉由平坦層的溝槽重疊而形成切割道,能夠提供支撐性良好的切割結構,進而提升切割品質。To sum up, the optical sensing device of the present invention can prevent frame glue puncture or disconnection caused by air shock by making the slits in the flat layer present a curved pattern, thereby improving the production yield of the optical sensing device . In addition, the optical sensing device of the present invention forms cutting lines by overlapping the grooves of the flat layer, which can provide a cutting structure with good support, thereby improving cutting quality.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.
10、20:光學感測裝置 A-A’、B-B’、C-C’、D-D’、E-E’:剖面線 BA:接合區 BM1、BM2、BM3:遮光層 CL:切割道 CP:對頂物 CR:色阻圖案 D1:第一方向 D2:第二方向 FG:框膠 I、II:區域 IL:絕緣層 ML:微透鏡結構 NA:非感測區 O1、O2、O3、OP:開口 PD:接墊 PLs、PL1、PL2、PL3、PL4:平坦層 Rb:藍色色阻圖案 Rg:綠色色阻圖案 Rk:黑色色阻圖案 Rr:紅色色阻圖案 SA:感測區 SB1、SB2:基板 SC:感測元件 SC1:第一電極 SC2:感光層 SC3:第二電極 SE:感測元件層 SP:間隙物 ST1、ST1h、ST1v:狹縫 ST2、ST2h、ST2v:狹縫 ST3、ST3h、ST3v:狹縫 Ts、T1、T2、T3、T4:溝槽 Tsa、T1a、T2a、T3a、T4a:溝槽 W1、W2:縫寬 10, 20: Optical sensing device A-A', B-B', C-C', D-D', E-E': hatching BA: junction area BM1, BM2, BM3: shading layer CL: cutting lane CP: Counterpoint CR: color resist pattern D1: the first direction D2: Second direction FG: frame glue I, II: area IL: insulating layer ML: microlens structure NA: non-sensing area O1, O2, O3, OP: opening PD: Pad PLs, PL1, PL2, PL3, PL4: Flat layers Rb: blue color resist pattern Rg: green color resistance pattern Rk: black color resistance pattern Rr: red color resistance pattern SA: sensing area SB1, SB2: Substrate SC: Sensing element SC1: first electrode SC2: photosensitive layer SC3: Second electrode SE: Sensing element layer SP: spacer ST1, ST1h, ST1v: Slits ST2, ST2h, ST2v: Slits ST3, ST3h, ST3v: Slits Ts, T1, T2, T3, T4: Groove Tsa, T1a, T2a, T3a, T4a: Trenches W1, W2: seam width
圖1A是依照本發明一實施例的光學感測裝置10的上視示意圖。
圖1B是圖1A的光學感測裝置10的區域I的放大示意圖。
圖1C是沿圖1B的剖面線A-A’所作的剖面示意圖。
圖1D是沿圖1A的剖面線B-B’所作的剖面示意圖。
圖1E是沿圖1A的剖面線C-C’所作的剖面示意圖。
圖2A是依照本發明一實施例的光學感測裝置20的上視示意圖。
圖2B是圖2A的光學感測裝置20的區域II的放大示意圖。
圖2C是沿圖2B的剖面線D-D’所作的剖面示意圖。
圖2D是沿圖2A的剖面線E-E’所作的剖面示意圖。
FIG. 1A is a schematic top view of an
A-A’:剖面線 A-A': hatching
CL:切割道 CL: cutting lane
FG:框膠 FG: frame glue
NA:非感測區 NA: non-sensing area
SA:感測區 SA: sensing area
ST1v、ST2v:狹縫 ST1v, ST2v: slit
W1、W2:縫寬 W1, W2: seam width
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---|---|---|---|---|
TWM567414U (en) * | 2017-09-20 | 2018-09-21 | 金佶科技股份有限公司 | Fingerprint identification apparatus |
US20190213379A1 (en) * | 2018-01-11 | 2019-07-11 | Boe Technology Group Co., Ltd. | Display panel and manufacturing method thereof and display device |
US20200091252A1 (en) * | 2018-09-17 | 2020-03-19 | Samsung Display Co., Ltd. | Display device |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7928527B2 (en) * | 2008-06-04 | 2011-04-19 | International Business Machines Corporation | Delamination and crack resistant image sensor structures and methods |
WO2011055638A1 (en) * | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US8928846B2 (en) * | 2010-05-21 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having dielectric film over and in contact with wall-like structures |
KR101736330B1 (en) * | 2010-09-03 | 2017-05-30 | 삼성전자주식회사 | Pixel, image sensor having the pixel, and image processing device having the image sensor |
CN103810479B (en) * | 2014-02-28 | 2019-04-05 | 成都费恩格尔微电子技术有限公司 | Fingerprint acquisition system and fingerprint information acquisition method |
CN104281841A (en) * | 2014-09-30 | 2015-01-14 | 深圳市汇顶科技股份有限公司 | Fingerprint identification system and fingerprint processing method and device thereof |
US9361507B1 (en) * | 2015-02-06 | 2016-06-07 | Hoyos Labs Ip Ltd. | Systems and methods for performing fingerprint based user authentication using imagery captured using mobile devices |
TWI621996B (en) * | 2015-11-23 | 2018-04-21 | 艾瑞克迪恩 傑森 | Fringerprint reader |
CN106056072B (en) * | 2016-05-27 | 2017-10-17 | 广东欧珀移动通信有限公司 | A kind of unlocked by fingerprint method and equipment |
TWI616824B (en) * | 2016-05-30 | 2018-03-01 | 晨星半導體股份有限公司 | Fingerprint recognition device and touch-control device with fingerprint recognition function |
JP6907228B2 (en) * | 2016-11-18 | 2021-07-21 | 富士フイルム株式会社 | Structures, solid-state image sensors, infrared sensors and compositions |
CN106886767B (en) * | 2017-02-23 | 2019-07-05 | 京东方科技集团股份有限公司 | A kind of optical fingerprint identification device and display panel |
TWI756388B (en) * | 2017-03-24 | 2022-03-01 | 日商富士軟片股份有限公司 | Structure, composition for forming near-infrared transmission filter layer, and photosensor |
US10643051B2 (en) * | 2017-07-13 | 2020-05-05 | Samsung Electronics Co., Ltd. | Optics-based fingerprint sensor, electric device including optics-based fingerprint sensor, and operation method of electric device |
CN109508135B (en) * | 2017-09-15 | 2022-05-27 | 上海耕岩智能科技有限公司 | Electronic equipment command executing method based on fingerprint identification and electronic equipment |
TWI741129B (en) * | 2018-01-16 | 2021-10-01 | 日商凸版印刷股份有限公司 | Electronic machine |
KR102489337B1 (en) * | 2018-01-17 | 2023-01-19 | 삼성디스플레이 주식회사 | Display device |
US12015037B2 (en) * | 2018-04-11 | 2024-06-18 | Sony Semiconductor Solutions Corporation | Imaging device and method of manufacturing imaging device |
US10558838B2 (en) * | 2018-05-11 | 2020-02-11 | Synaptics Incorporated | Optimized scan sequence for biometric sensor |
WO2021035622A1 (en) * | 2019-08-29 | 2021-03-04 | 深圳市汇顶科技股份有限公司 | Fingerprint recognition apparatus and electronic device |
CN209640880U (en) * | 2019-04-10 | 2019-11-15 | 深圳市汇顶科技股份有限公司 | Optical fingerprint identification device and electronic equipment |
KR20210010681A (en) * | 2019-07-17 | 2021-01-28 | 삼성디스플레이 주식회사 | Electroluminescent device |
CN111261652A (en) * | 2019-09-23 | 2020-06-09 | 神盾股份有限公司 | Integrated optical sensor and method of manufacturing the same |
WO2021082017A1 (en) * | 2019-11-01 | 2021-05-06 | 深圳市汇顶科技股份有限公司 | Fingerprint detection apparatus and electronic device |
KR20210086907A (en) * | 2019-12-31 | 2021-07-09 | 삼성디스플레이 주식회사 | Display device |
CN212135461U (en) * | 2020-02-05 | 2020-12-11 | 神盾股份有限公司 | Optical biological characteristic sensor with staggered light receiving structure |
CN211427368U (en) * | 2020-03-03 | 2020-09-04 | 北京迈格威科技有限公司 | Fingerprint identification device, display panel and equipment |
CN112712039B (en) * | 2020-12-31 | 2024-03-01 | 维沃移动通信有限公司 | Fingerprint module and electronic equipment |
CN113065469B (en) * | 2021-04-02 | 2024-08-02 | 汇顶科技私人有限公司 | Fingerprint identification device and electronic equipment |
-
2021
- 2021-11-18 TW TW110143054A patent/TWI811854B/en active
- 2021-11-29 TW TW110144476A patent/TWI792729B/en active
- 2021-11-30 TW TW110144702A patent/TWI790019B/en active
- 2021-12-08 TW TW110145953A patent/TWI806280B/en active
- 2021-12-15 TW TW110146878A patent/TWI823209B/en active
- 2021-12-21 TW TW110147983A patent/TWI781026B/en active
- 2021-12-28 TW TW110149195A patent/TWI792813B/en active
-
2022
- 2022-03-25 TW TW111111360A patent/TWI796183B/en active
- 2022-04-14 TW TW111114339A patent/TWI799234B/en active
- 2022-04-14 TW TW112116137A patent/TWI840212B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWM567414U (en) * | 2017-09-20 | 2018-09-21 | 金佶科技股份有限公司 | Fingerprint identification apparatus |
US20190213379A1 (en) * | 2018-01-11 | 2019-07-11 | Boe Technology Group Co., Ltd. | Display panel and manufacturing method thereof and display device |
US20200091252A1 (en) * | 2018-09-17 | 2020-03-19 | Samsung Display Co., Ltd. | Display device |
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