TW202306191A - Electronic apparatus - Google Patents

Abstract

An electronic apparatus includes a substrate, a biometric region, a chip, a first planarization layer, a first light shielding layer and an antenna. The biometric region is on the substrate and includes at least one first active device and at least one light sensitive device. The light sensitive device is on the first active device and electrically connected to the first active device. The light sensitive device has a light sensitive layer. The chip is on the substrate and has a second active device. The first planarization layer is on the first active device and the second active device. The first light shielding layer is on the first planarization layer. The first light shielding layer has at least one first opening. The first opening overlaps the light sensitive layer. The antenna is on the first planarization layer. The antenna has a first loop. The first loop and the first light shielding layer are formed in the same film layer.

Description

electronic device

The invention relates to an electronic device.

Near Field Communication (NFC) allows two electronic devices equipped with antennas to communicate wirelessly within a distance of a few centimeters. This non-contact data exchange mechanism has high response speed, high security, Convenience and other advantages are already one of the necessary elements in communication products.

In order to provide under-display fingerprint recognition in current display devices, it is necessary to install sensing circuits required for fingerprint recognition on the display device. However, adding an antenna device to the display device not only increases the overall thickness of the display device, but also requires a single assembly. A step of.

The invention provides an electronic device, which can provide near-distance wireless communication and under-screen fingerprint recognition functions.

An electronic device according to an embodiment of the present invention includes a substrate, a biometric identification area, a chip, a first flat layer, a first light-shielding layer, and an antenna. The biometric identification area is located on the substrate and includes at least one first active element and at least one photosensitive element. The photosensitive element is located on the first active element and electrically connected to the first active element, and the photosensitive element has a photosensitive layer. The chip is located on the substrate and has the second active element. The first planar layer is located on the first active element and the second active element. The first light shielding layer is located on the first flat layer, the first light shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer. The antenna is located on the first flat layer, the antenna has a first loop, and the first loop and the first light-shielding layer are the same film layer.

Based on the above, in the electronic device of the present invention, the first light-shielding layer has at least one first opening, the first opening overlaps the photosensitive layer, the first loop and the first light-shielding layer are the same film layer, in other words, the first The loop and the first light-shielding layer can be defined in the same patterning process. Therefore, without increasing the number and cost of the mask, the design of the first loop of the electronic device with the photosensitive element can provide short-distance Wireless communication and under-screen fingerprint recognition functions.

Figure 1 is a schematic top view of an electronic device 10 according to an embodiment of the present invention, and Figure 2 is a schematic cross-sectional view along the section line AA' in Figure 1, please refer to Figure 1 and Figure 2 together , the electronic device 10 includes a substrate 100 , a biometric identification area 102 and a chip 104 , and the biometric identification area 102 is located on the substrate 100 . The biometric identification area 102 includes at least one first active device T1 and a photosensitive device PD. The photosensitive device PD is located on the first active device T1 and electrically connected to the first active device T1.

For example, the first active device T1 includes a semiconductor layer SC1 , a gate G1 , a source S1 and a drain D1 . Materials of the gate G1 , the source S1 and the drain D1 may include metals with good electrical conductivity, such as aluminum, molybdenum, titanium, copper and other metals. The chip 104 is located on the substrate 100 and has a second active device T2. For example, the second active device T2 includes a semiconductor layer SC2, a gate G2, a source S2, and a drain D2. Materials of the gate G2 , the source S2 and the drain D2 may include metals with good electrical conductivity, such as aluminum, molybdenum, titanium, copper and other metals.

The electronic device 10 further includes a gate insulating layer GI, an interlayer insulating layer ILD, and a first insulating layer 106 . Materials of the gate insulating layer GI, the interlayer insulating layer ILD, and the first insulating layer 106 may include transparent insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, etc., but the invention is not limited thereto. Materials of the semiconductor layers SC1 and SC2 may include silicon semiconductor materials (such as polysilicon, amorphous silicon, etc.), oxide semiconductor materials, and organic semiconductor materials.

The region where the semiconductor layer SC1 overlaps the gate G1 can be regarded as the channel region CH1 of the first active device T1 , and the region where the semiconductor layer SC1 overlaps the gate G1 can be regarded as the channel region CH1 of the first active device T1 . The gate insulating layer GI is located between the gate G1 and the semiconductor layer SC1 and between the gate G2 and the semiconductor layer SC2, and the interlayer insulating layer ILD is disposed between the source S1 and the gate G1 and between the drain D1 and the gate G1 , and the interlayer insulating layer ILD is disposed between the source S2 and the gate G2 and between the drain D2 and the gate G2.

The semiconductor layer SC1 includes a lightly doped source region SR1a, a heavily doped source region SR1b, a lightly doped drain region DR1a, a heavily doped drain region DR1b, and a channel region CH1. The source S1 and the drain D1 penetrate the interlayer insulating layer ILD and the gate insulating layer GI to electrically connect the source heavily doped region SR1b and the drain heavily doped region DR1b of the semiconductor layer SC1 respectively.

The semiconductor layer SC2 includes a lightly doped source region SR2a, a heavily doped source region SR2b, a lightly doped drain region DR2a, a heavily doped drain region DR2b, and a channel region CH2. The source S2 and the drain D2 penetrate the interlayer insulating layer ILD and the gate insulating layer GI to electrically connect the source heavily doped region SR2b and the drain heavily doped region DR2b of the semiconductor layer SC2 respectively.

The photosensitive element PD includes a lower electrode E1, a photosensitive layer SL, and an upper electrode E2. The lower electrode E1 is located on the interlayer insulating layer ILD, the photosensitive layer SL is located on the lower electrode E1, and the upper electrode E2 is located on the photosensitive layer SL. The photosensitive element PD passes through the lower electrode. E1 is electrically connected to the drain D1 of the first active device T1. In this embodiment, the lower electrode E1 and the drain D1 of the first active element T1 are the same film layer and have the same material, and the upper electrode E2 is, for example, a light-transmitting electrode, and the material of the light-transmitting electrode includes metal oxide , for example: indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above.

In this embodiment, the electronic device 10 further includes a first planar layer PL1 , a first light shielding layer 108 and an antenna 110 . The first planar layer PL1 is located on the first active device T1 and the second active device T2 , for example, the first planar layer PL1 is located on the drains D1 , D2 , and the sources S1 , S2 . The first light-shielding layer 108 is located on the first flat layer PL1, and the first light-shielding layer 108 has at least one first opening OP1. The first opening OP1 overlaps the photosensitive layer SL, and can filter out light rays with large angles and leave light rays with small angles. .

The first insulating layer 106 has an opening exposing the photosensitive layer SL, and the upper electrode E2 of the photosensitive element PD extends into the opening to cover the part of the photosensitive layer SL exposed by the opening. In this embodiment, the material of the photosensitive layer SL is, for example, silicon-rich oxide (SRO) or other suitable materials.

Fig. 3 is a three-dimensional schematic diagram of the antenna 110, please refer to Fig. 1 to Fig. 3 together, the antenna 110 has a first loop 110a, the first loop 110a and the first light-shielding layer 108 are the same film layer, with the same material In other words, the first circle 110a and the first light-shielding layer 108 can be defined by the same patterning process. Therefore, the design of the antenna 110 of the electronic device 10 together with the photosensitive element PD and the first light-shielding layer 108 can provide short-distance wireless communication and under-screen fingerprint recognition functions without increasing the number and cost of photomasks. The material of the antenna 110 is blackened metal (that is, low-reflection metal) or a combination of metal and metal oxide, which can improve optical performance.

In this embodiment, the top view profile of the antenna 110 is a rectangle, but the present invention is not limited thereto. The top view profile of the antenna 110 can be configured according to the profile of the biometric identification area 102. For example, the top view profile of the antenna 110 can be circular, Any shape such as ellipse.

The drain D2 of the second active element T2 overlaps a part of the first loop 110 a of the antenna 110 , so that the electronic device 10 has a narrow frame. The antenna 110 surrounds the biometric identification area 102 in the plan view direction of the substrate 100 , and the first loop 110 a penetrates through the first flat layer PL1 to electrically connect the drain D2 of the second active device T2 . The antenna 110 further includes a pad P1 for connecting the antenna 110 and the drain D2 of the second active element T2. In this embodiment, the pad P1 and the upper electrode E2 are of the same film layer, in other words, the pad P1 and the upper electrode E2 may have the same material. Therefore, the antenna 110 can be electrically connected to the drain D2 without increasing the number of masks and the cost.

In one embodiment, the electronic device 10 further includes a first protective layer BP1, a second planar layer PL2, a second protective layer BP2, a third planar layer PL3, and a third protective layer sequentially disposed on the first planar layer PL1 BP3. The materials of the first protection layer BP1, the second planarization layer PL2, the second protection layer BP2, the third planarization layer PL3 and the third protection layer BP3 may include transparent insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, etc. etc., but the present invention is not limited thereto.

In one embodiment, the electronic device 10 further includes a second light-shielding layer 112, the second light-shielding layer 112 is located on the first light-shielding layer 108 and has at least one second opening OP2, the second opening OP2 overlaps the first opening OP1, and the antenna 110 also has a second loop 110b, and the second loop 110b and the second light-shielding layer 112 are the same film layer. In other words, the second circle 110b and the second light-shielding layer 112 can be defined by the same patterning process. Therefore, the design of the antenna 110 of the electronic device 10 together with the photosensitive element PD and the second light-shielding layer 112 can provide short-distance wireless communication and under-screen fingerprint recognition functions without increasing the number and cost of photomasks.

In one embodiment, the electronic device 10 further includes a third light-shielding layer 114 and a plurality of microlenses LS. The third light-shielding layer 114 is located on the first flat layer PL1 and has a plurality of third openings OP3. The microlenses LS are located in each third opening OP3 of the third light-shielding layer 114. One of the microlenses LS overlaps the photosensitive layer SL. , the antenna 110 also has a third loop 110c, and the third loop 110c and the third light-shielding layer 114 are the same film layer. In other words, the third circle 110c and the third light-shielding layer 114 can be defined by the same patterning process. Therefore, the design of the antenna 110 of the electronic device 10 together with the photosensitive element PD and the third light-shielding layer 114 can provide short-distance wireless communication and under-screen fingerprint recognition functions without increasing the number of photomasks and cost. For convenience of illustration, the second loop 110b and the third loop 110c are omitted in the first figure.

The first loop 110 a , the second loop 110 b and the third loop 110 c of the antenna 110 overlap each other in the normal direction of the substrate 100 , so that the electronic device 10 can have a narrow frame.

In one embodiment, the electronic device 10 may have a Gate-Driver on-Array (Gate-Driver on-Array) circuit 116, a source driver circuit 118, and a test circuit 120. The Gate-Driver on-Array circuit 116 is located in the biometric identification area 102 The source driving circuit 118 and the testing circuit 120 are located on opposite sides of the biometric identification area 102 . The electronic device 10 is electrically connected to the external circuit 121. The external circuit 121 can be connected to the substrate 100 through a chip-on-film bonding process (Chip On Film; COF), a chip-on-glass bonding process (Chip On Glass; COG) or other methods. Wires (not shown) are bonded.

4 is a schematic top view of a display device 14 according to an embodiment of the present invention. The display device 14 has a display 12 and an electronic device 10. The electronic device 10 can provide the display device 14 with short-range wireless communication and under-screen fingerprint recognition functions. The display 12 is, for example, an organic light emitting diode display (OLED), and may also be a micro light emitting diode display (Micro-LED).

Fig. 5 is a schematic top view of an electronic device 20 according to another embodiment of the present invention, and Fig. 6 is a schematic cross-sectional view along the section line BB' in Fig. 5, please refer to Fig. 5 and Fig. 6 together The difference between the electronic device 20 and the electronic device 10 in this embodiment is that the second loop 210b is connected to the first loop 210a and surrounded by the first loop 210a, and the first loop 210a and the second loop 210b are the same film layer . In other words, the first loop 210a, the second loop 210b and the first light-shielding layer 108 can be defined by the same patterning process. Therefore, the design of the antenna 200 of the electronic device 20 together with the photosensitive element PD and the first light-shielding layer 108 can provide short-distance wireless communication and under-screen fingerprint recognition functions without increasing the number of photomasks and cost.

FIG. 7 is a schematic top view of an electronic device 30 according to another embodiment of the present invention. The main difference between the electronic device 30 of this embodiment and the electronic device 20 in FIG. 6 lies in the first loop 310a of the antenna 310 of the electronic device 30 It extends in a direction away from the biometric identification area 102 , for example, in a direction d1 , so as to connect to a second active device (not shown) of the chip 104 .

FIG. 8 is a schematic cross-sectional view of an electronic device 40 according to another embodiment of the present invention. The difference between the electronic device 40 of this embodiment and the electronic device 10 is that the electronic device 40 further includes a protective glass 122, and the protective glass 122 has a surface facing the substrate 100. The surface 122a of the third light shielding layer 414 is located on the surface 122a of the protective glass 122 and has a plurality of third openings OP3, the microlens LS is located in each third opening OP3 of the third light shielding layer 414, one of the microlenses LS overlapped with the photosensitive layer SL.

The electronic device 40 also includes a color filter layer CF and a spacer PS. The color filter layer CF is located on the cover glass 122 and may include RGB color layers. The spacer PS is located between the cover glass 122 and the substrate 100 to maintain the cover glass 122. A certain distance from the substrate 100.

To sum up, in the electronic device of the present invention, the first light-shielding layer has at least one first opening, the first opening overlaps the photosensitive layer, the first loop and the first light-shielding layer are the same film layer, in other words, The first loop and the first light-shielding layer can be defined in the same patterning process. Therefore, without increasing the number of masks and costs, the design of the first loop of the electronic device with the photosensitive element can provide Short-range wireless communication and under-screen fingerprint recognition.

10: Electronic device 12: Display 14: Display device 20, 30, 40: Electronics 100: Substrate 102: Biometric identification area 104: chip 106: The first insulating layer 108: the first shading layer 110: Antenna 110a: The first round 110b: Second loop 110c: The third loop 112: the second shading layer 114: the third shading layer 116: Gate drive circuit on the array 118: Source drive circuit 120: Test circuit 121: External circuit 122: protective glass 122a: surface 200: Antenna 210a: The first round 210b: Second loop 310: Antenna 310a: the first loop 414: the third shading layer A-A': section line B-B': broken line BP1: The first protective layer BP2: Second protective layer BP3: The third protective layer CF: color filter layer CH1, CH2: channel area DR1a, DR2a: drain very lightly doped regions DR1b, DR2b: drain heavily doped regions D1, D2: drain d1: direction E1: Bottom electrode E2: Upper electrode GI: gate insulation layer G1, G2: gate ILD: interlayer insulating layer LS: microlens OP1: first opening OP2: second opening OP3: the third opening PD: photosensitive element PL1: the first flat layer PL2: second flat layer PL3: third flat layer PS: spacer P1: Pad SC1, SC2: semiconductor layer SL: photosensitive layer SR1a, SR2a: source lightly doped regions SR1b, SR2b: source heavily doped regions S1, S2: source T1: The first active component T2: The second active component

Read the following detailed description and match the corresponding diagrams to understand the multiple aspects of this disclosure. It should be noted that many features in the drawings are not drawn to scale in accordance with standard practice in this industry. In fact, the dimensions of the described features may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 is a schematic top view of an electronic device according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view along line A-A' of Fig. 1 . Fig. 3 is a three-dimensional schematic diagram of the antenna. FIG. 4 is a schematic top view of a display device according to an embodiment of the present invention. FIG. 5 is a schematic top view of an electronic device according to another embodiment of the present invention. Fig. 6 is a schematic cross-sectional view along the section line B-B' in Fig. 5 . FIG. 7 is a schematic top view of an electronic device according to another embodiment of the present invention. FIG. 8 is a schematic cross-sectional view of an electronic device according to another embodiment of the present invention.

Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

10: Electronic device

100: Substrate

104: chip

106: The first insulating layer

108: the first shading layer

110: Antenna

110a: The first round

110b: Second loop

110c: The third loop

112: the second shading layer

114: the third shading layer

A-A': section line

BP1: The first protective layer

BP2: Second protective layer

BP3: The third protective layer

CH1, CH2: channel area

DR1a, DR2a: drain very lightly doped regions

DR1b, DR2b: drain heavily doped regions

D1, D2: drain

E1: Bottom electrode

E2: Upper electrode

GI: gate insulation layer

G1, G2: gate

ILD: interlayer insulating layer

LS: microlens

OP1: first opening

OP2: second opening

OP3: the third opening

PD: photosensitive element

PL1: the first flat layer

PL2: second flat layer

PL3: third flat layer

P1: Pad

SC1, SC2: semiconductor layer

SL: photosensitive layer

SR1a, SR2a: source lightly doped regions

SR1b, SR2b: source heavily doped regions

S1, S2: source

T1: The first active component

T2: The second active component

Claims (11)

An electronic device comprising: a substrate; A biometric identification area is located on the substrate and includes: at least one first active element; and at least one photosensitive element, located on the first active element and electrically connected to the first active element, the photosensitive element has a photosensitive layer; A chip is located on the substrate and has a second active device; a first planar layer located on the first active element and the second active element; a first light-shielding layer located on the first planar layer, the first light-shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer; and An antenna is located on the first flat layer, wherein the antenna has a first loop, and the first loop and the first light-shielding layer are the same film layer. The electronic device as described in claim 1, further comprising: A second light-shielding layer is located on the first light-shielding layer and has at least one second opening, the second opening overlaps the first opening, the antenna also has a second loop, the second loop and the first The two light-shielding layers are the same film layer. The electronic device as described in claim 2, further comprising: a third light-shielding layer located on the first flat layer and having a plurality of third openings; and A plurality of microlenses are located in each of the third openings of the third light-shielding layer, wherein one of the microlenses overlaps the photosensitive layer, and the antenna also has a third loop, the third loop and the The third light-shielding layer is the same film layer. The electronic device according to claim 3, wherein the first loop, the second loop, and the third loop of the antenna overlap with each other in the normal direction of the substrate. The electronic device according to claim 1, wherein the antenna further includes: A second loop is connected to the first loop and surrounded by the first loop, wherein the first loop and the second loop are the same film layer. The electronic device as described in claim 1, further comprising: A cover glass has a surface facing the substrate; a third light-shielding layer located on the surface of the protective glass and having a plurality of third openings; and A plurality of microlenses are located in each of the third openings of the third light-shielding layer, wherein one of the microlenses overlaps the photosensitive layer. The electronic device according to claim 1, wherein the second active element has a drain, and the drain overlaps a part of the first loop of the antenna. The electronic device as claimed in claim 1, wherein the first loop of the antenna extends away from the biometric identification area to connect to the second active element of the chip. The electronic device according to claim 1, wherein the material of the antenna is blackened metal or a combination of metal and metal oxide. The electronic device according to claim 1, wherein the antenna surrounds the biometric identification area in a plan view direction of the substrate, and the first loop passes through the first flat layer to electrically connect the second active element. The electronic device according to claim 1, wherein the antenna further includes a pad, the photosensitive element further includes an upper electrode, the upper electrode is located on the photosensitive layer, and the pad and the upper electrode are of the same film layer.

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