TW202306190A - Photosensitive device - Google Patents

Abstract

A photosensitive device includes a first photosensitive unit, a first collimator layer, a first lens, and a first dummy lens. The first photosensitive unit includes a first photosensitive component and a first control circuit. The first control circuit is electrically connected to the first photosensitive component. The first collimator layer is located above the first photosensitive component and has a first pinhole and a first dummy pinhole. The first lens is located above the first collimator layer and overlapping with the first photosensitive component and the first pinhole in a first direction. The first dummy lens is located above the first collimator layer and overlapping with the first dummy pinhole in the first direction.

Description

photosensitive device

The present invention relates to a photosensitive device, and more particularly to a photosensitive device including a lens.

The under-display fingerprint sensing technology is to dispose the photosensitive device under the display panel of the electronic device. After the electronic device detects that the user touches the display screen, the electronic device controls the light source to emit light to illuminate the surface of the user's finger. The light will be reflected by the user's finger and enter the photosensitive device under the display panel. The photosensitive element in the photosensitive device receives the light and generates a signal. In some photosensitive devices, the light is preferably focused on the photosensitive element through a lens.

The invention provides a photosensitive device, which can improve the problems of uneven lens shape and uneven pinhole shape.

At least one embodiment of the present invention provides a photosensitive device. The photosensitive device includes a first photosensitive unit, a first collimation layer, a first lens and a first dummy lens. The first photosensitive unit includes a first photosensitive element and a first control circuit. The first control circuit is electrically connected to the first photosensitive element. The first alignment layer is located on the first photosensitive element and has a first pinhole array, and the first pinhole array includes first pinholes and first dummy pinholes. The first lens array is located on the first collimation layer, and includes first lenses and first dummy lenses. The first lens overlaps the first photosensitive element and the first pinhole in the first direction. The first dummy lens overlaps the first dummy pinhole in the first direction.

Based on the above, by setting the first dummy lens and the first dummy pinhole, the problem of uneven shape of the lens and the problem of uneven shape of the pinhole can be improved.

FIG. 1A is a schematic top view of a photosensitive device according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the photosensitive device shown in FIG. 1A . The photosensitive device 10 includes a plurality of pixels, and FIG. 1A and FIG. 1B only show one pixel of the photosensitive device 10 .

Please refer to FIG. 1A and FIG. 1B , the photosensitive device 10 includes a first photosensitive unit SU1 , a first alignment layer 210 , and a first lens array ML1A. In this embodiment, the photosensitive device 10 further includes a first substrate 100 , a first flat layer 130 , a second alignment layer 220 , a second flat layer 140 and a light shielding structure 230 .

The first photosensitive unit SU1 is located on the first substrate 100 and includes a first photosensitive element SE1 and a first control circuit CC1 . The first photosensitive element SE1 may include any form of photosensitive element. The first control circuit CC1 includes, for example, active elements or a combination of active elements and passive elements. The first control circuit CC1 is electrically connected to the first photosensitive element SE1. For example, the active element in the first control circuit CC1 is electrically connected to the electrode of the first photosensitive element SE1.

The first alignment layer 210 is located on the first photosensitive element SE1 and has a first pinhole array PH1A. In some embodiments, the material of the first alignment layer 210 includes black resin, black metal or other light-shielding materials. The first pinhole array PH1A includes a first pinhole PH1 penetrating through the first alignment layer 210 and a first dummy pinhole DPH1 . In this embodiment, the first pinhole array PH1A includes first pinholes PH1 and first dummy pinholes DPH1 arranged in an array in the second direction DR2 and the third direction DR3 .

The first pinhole PH1 overlaps the first photosensitive element SE1 in the first direction DR1 perpendicular to the first substrate 100 , while the first dummy pinhole DPH1 does not overlap the first photosensitive element SE1 in the first direction DR1 . In some embodiments, the first dummy pinhole DPH1 overlaps the first control circuit CC1 in the first direction DR1 . The first pinhole PH1 and the first dummy pinhole DPH1 have the same first distance X1 in the second direction DR2, and the first pinhole PH1 and the first dummy pinhole DPH1 have the same second distance X1 in the third direction DR3. Spacing X2. The first distance X1 and the second distance X2 are in the range of 10 microns to 30 microns.

In some embodiments, the method of forming the first alignment layer 210 includes: forming a light-shielding material layer, then forming a patterned photoresist layer on the surface of the light-shielding material layer, and then using the patterned photoresist layer as a mask The aforementioned light-shielding material layer is etched to form the first alignment layer 210 having the first pinhole array PH1A.

In this embodiment, since the first dummy pinhole DPH1 is to be formed, the patterned photoresist layer is not prone to the problem of pattern irregularity. Specifically, if there is no need to form the first dummy pinhole DPH1, when forming the patterned photoresist layer used for etching the light-shielding material layer, the developer cannot be evenly distributed between the position where the first pinhole PH1 needs to be provided and the position where the first pinhole PH1 needs to be provided. The position of the first pinhole PH1 needs to be set, which leads to inconsistent opening shapes of the formed patterned photoresist layer. In this embodiment, because the first dummy pinhole DPH1 is to be formed, the patterned photoresist layer used for etching the light-shielding material layer is not prone to the problem of inconsistency in the shape of the openings, so that the holes formed through the patterned photoresist layer The first pinhole array PH1A may have uniformly distributed pinhole shapes and pinhole diameters. In other words, the disposition of the first dummy pinholes DPH1 can improve the problems of uneven distribution of shape and uneven distribution of apertures of the first pinholes PH1 .

In some embodiments, the diameter D1 of the first pinhole PH1 and the first dummy pinhole DPH1 is in a range of 2 micrometers to 6 micrometers. In some embodiments, the depth H1 of the first pinhole PH1 and the first dummy pinhole DPH1 is in a range of 450 angstroms to 850 angstroms. In some embodiments, the first pinhole PH1 and the first dummy pinhole DPH1 have the same diameter D1 and the same depth H1. In some embodiments, the variation of the diameter D1 of the first pinhole PH1 is within plus or minus 0.2 microns.

In FIG. 1A and FIG. 1B , one pixel of the photosensitive device 10 includes eight first pinholes PH1 and eight first dummy pinholes DPH1 , but the present invention is not limited thereto. The quantity and arrangement of the first pinholes PH1 and the first dummy pinholes DPH1 can be adjusted according to actual needs.

The first planarization layer 130 is located on the first alignment layer 210 . In this embodiment, the first flat layer 130 fills the first pinhole PH1 and the first dummy pinhole DPH1.

The second alignment layer 220 is located on the first alignment layer 210 . In this embodiment, the second alignment layer 220 is located on the first planar layer 130 , and the first planar layer 130 is located between the first alignment layer 210 and the second alignment layer 220 . The second alignment layer 220 has a second pinhole PH2 overlapping the first pinhole PH1 in the first direction DR1. The diameter D2 of the second pinhole PH2 is larger than the diameter D1 of the first pinhole PH1. In some embodiments, the diameter D2 of the second pinhole PH2 is in the range of 3 microns to 15 microns. In some embodiments, the depth H2 of the second pinhole PH2 ranges from 450 angstroms to 850 angstroms. In this embodiment, the second pinhole PH2 does not overlap the first dummy pinhole DPH1, and the second alignment layer 220 shields the first dummy pinhole DPH1.

In this embodiment, since the aperture D2 of the second pinhole PH2 is larger than the aperture D1 of the first pinhole PH1 , the process margin of the second alignment layer 220 is larger than that of the first alignment layer 210 .

The second planarization layer 140 is located on the second alignment layer 220 . In this embodiment, the second flat layer 140 fills the second pinhole PH2.

The light shielding structure 230 is located on the second flat layer 140 . The light shielding structure 230 has a plurality of openings O overlapping the second pinhole PH2 , the first pinhole PH1 and the first dummy pinhole DPH1 in the first direction DR1 . In some embodiments, the width D3 of the opening O is greater than the diameter D2 of the second pinhole PH2.

In some embodiments, the second alignment layer 220 and the light shielding structure 230 include the same light shielding material as that of the first alignment layer 210 , but the invention is not limited thereto. In other embodiments, the second collimation layer 220 and the light shielding structure 230 include a light shielding material different from that of the first collimation layer 210 .

The first lens array ML1A is located on the first collimating layer 210 . In this embodiment, the first lens array ML1A is located on the second planar layer 140 and disposed in the opening O of the light shielding structure 230 . In this embodiment, the first lens array ML1A includes the first lens ML1 and the first dummy lens DML1 arranged in an array in the second direction DR2 and the third direction DR3, and the first lens ML1 and the first dummy lens DML1 are respectively Set in opening O.

The first lens ML1 overlaps the first photosensitive element SE1 , the first pinhole PH1 and the second pinhole PH2 in the first direction DR1 . The first dummy lens DML1 overlaps the first dummy pinhole DPH1 in the first direction DR1. The first dummy lens DML1 does not overlap the first photosensitive element SE1 in the first direction DR1 , and the first dummy lens DML1 overlaps the first control circuit CC1 in the first direction DR1 . The second collimation layer 220 is located between the first dummy pinhole DPH1 and the first dummy lens DML1 in the first direction DR1, and shields the first dummy pinhole DPH1, so that the light rays passing through the first dummy lens DML1 can avoid The first control circuit CC1 has a negative influence.

The first lens ML1 and the first dummy lens DML1 have the same first distance X1 in the second direction DR2 , and the first lens ML1 and the first dummy lens DML1 have the same second distance X2 in the third direction DR3 .

In some embodiments, the method of forming the first lens array ML1A includes: forming a photoresist material layer, and then patterning the aforementioned photoresist material layer to form the first lens ML1 and the first dummy lens DML1.

In this embodiment, since the first dummy lens DML1 is to be formed, the first lens array ML1A is not prone to the problem of pattern irregularity. Specifically, if there is no need to form the first dummy lens DML1, then when forming the first lens array ML1A, the developer cannot be evenly distributed in the positions where the first lens ML1 needs to be provided and the positions where the first lens ML1 does not need to be provided. Furthermore, the lens shapes of the formed first lens ML1 are inconsistent, for example, the surface of some first lenses ML1 is not round enough. In this embodiment, because the first dummy lenses DML1 are to be formed, the first lens array ML1A may have uniformly distributed lens shapes and lens thicknesses. In other words, the disposition of the first dummy lens DML1 can improve the problem of uneven distribution of the shape and thickness of the first lens ML1 . In some embodiments, the variation of the radius of curvature R1 of the first lens ML1 is within plus or minus 0.2 microns, the variation of the width of the first lens ML1 is within plus or minus 0.6 microns, and the variation of the thickness H3 of the first lens ML1 is within plus or minus 10%. within the thickness H3.

In some embodiments, the curvature radius R1 of the first lens ML1 and the first dummy lens DML1 is in a range of 7 μm to 25 μm. In some embodiments, the thickness H3 of the first lens ML1 and the first dummy lens DML1 is in a range of 2 micrometers to 6 micrometers. In some embodiments, the first lens ML1 and the first dummy lens DML1 have the same curvature radius R1 , the same thickness H3 and the same material.

FIG. 2A is a schematic top view of a photosensitive device according to an embodiment of the present invention. FIG. 2B is a schematic cross-sectional view of the photosensitive device of FIG. 2A . It must be noted here that the embodiment in Figure 2A and Figure 2B continues to use the element numbers and parts of the embodiment in Figure 1A and Figure 1B, wherein the same or similar symbols are used to represent the same or similar elements, and the same elements are omitted. A description of the technical content. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The main difference between the photosensitive device 20 in FIG. 2A and FIG. 2B and the photosensitive device 10 in FIG. 1A and FIG. 1B is that the first planar layer 130 of the photosensitive device 20 has a first trench TR1 .

Please refer to FIG. 2A and FIG. 2B , the first flat layer 130 is located between the first alignment layer 210 and the second alignment layer 220 . The first flat layer 130 has a first trench TR1 , and the second alignment layer 220 fills in the first trench TR1 and contacts the first alignment layer 210 . The first trench TR1 is suitable for dividing the first flat layer 130 into different sections, so as to prevent the photosensitive device 20 from being bent due to the stress generated during the formation of the first flat layer 130 .

In some embodiments, the first trench TR1 of the first planar layer 130 overlaps the first dummy pinhole DPH1, and the second alignment layer 220 fills the first dummy pinhole DPH1, but the present invention does not take this as a limit. In other embodiments, the first trench TR1 of the first flat layer 130 does not overlap the first dummy pinhole DPH1. In some embodiments, the width of the first trench TR1 is in the range of 6 microns to 10 microns.

FIG. 3A is a schematic top view of a photosensitive device according to an embodiment of the present invention. FIG. 3B is a schematic cross-sectional view of the photosensitive device of FIG. 3A . It must be noted here that the embodiment of FIG. 3A and FIG. 3B follows the component numbers and part of the content of the embodiment of FIG. 2A and FIG. A description of the technical content. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here. The photosensitive device 30 includes a plurality of pixels, and FIG. 3A and FIG. 3B only show two pixels PX1 and PX2 of the photosensitive device 30 .

The main difference between the photosensitive device 30 in FIG. 3A and FIG. 3B and the photosensitive device 20 in FIGS. 2A and 2B is that the second planar layer 140 of the photosensitive device 30 has a second trench TR2 .

In this embodiment, the photosensitive device 30 includes a first photosensitive unit SU1 and a second photosensitive unit SU2 . The first photosensitive unit SU1 and the second photosensitive unit SU2 are located in the pixel PX1 and the pixel PX2 respectively. The first photosensitive unit SU1 and the second photosensitive unit SU2 are located on the first substrate 100 . The first photosensitive unit SU1 includes a first photosensitive element SE1 and a first control circuit CC1 electrically connected to the first photosensitive element SE1 . The second photosensitive unit SU2 includes a second photosensitive element SE2 and a second control circuit CC2 electrically connected to the second photosensitive element SE2.

In this embodiment, part of the first lens ML1 overlaps the first photosensitive element SE1 and part of the first pinhole PH1 in the first direction DR1, and another part of the first lens ML1 overlaps the second photosensitive element in the first direction DR1. The element SE2 and another part of the first pinhole PH1. The first dummy lenses DML1 respectively overlap the corresponding first dummy pinholes DPH1 in the first direction DR1 , and do not overlap the first photosensitive element SE1 and the second photosensitive element SE2 .

The second planarization layer 140 is located on the second alignment layer 220 . The second flat layer 140 has a second trench TR2. The second trench TR2 is suitable for dividing the second planar layer 140 into different sections, so as to prevent the photosensitive device 30 from bending due to the stress generated during the formation of the first planar layer 140 . In some embodiments, the light shielding structure 230 is filled into the second trench TR2 and contacts the second alignment layer 220 .

In this embodiment, the second trench TR2 of the second planar layer 140 and the first trench TR1 of the first planar layer 130 are respectively disposed in different pixels. In this embodiment, the second trench TR2 of the second planar layer 140 overlaps the second photosensitive unit SU2 , and the first trench TR1 of the first planar layer 130 overlaps the first photosensitive unit SU1 . In some embodiments, the width of the first trench TR1 and the width of the second trench TR2 are in a range of 6 μm to 10 μm.

In this embodiment, the photosensitive device 30 further includes a third flat layer 150 . The third flat layer 150 is located on the light shielding structure 230 . The first lens ML1 and the first dummy lens DML1 are located on the third flat layer 150 . The first lens ML1 overlaps the opening O of the light shielding structure 230 in the first direction DR1 , and the opening O does not overlap the first dummy pinhole DPH1 in the first direction DR1 . In some embodiments, the first dummy lens DML1 does not overlap the opening O of the light shielding structure 230 in the first direction DR1 , but the invention is not limited thereto. In other embodiments, the first dummy lens DML1 and the first lens ML1 respectively overlap the opening O of the light shielding structure 230 in the first direction DR1 .

FIG. 4A is a schematic top view of a photosensitive device according to an embodiment of the present invention. FIG. 4B is a schematic cross-sectional view of the photosensitive device of FIG. 4A . It must be noted here that the embodiment of FIG. 4A and FIG. 4B follows the component numbers and part of the content of the embodiment of FIG. 3A and FIG. A description of the technical content. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here. The photosensitive device 40 includes a plurality of pixels, and FIG. 4A shows four pixels PX1 , PX2 , PX3 , and PX4 of the photosensitive device 40 .

The main difference between the photosensitive device 40 in FIG. 4A and FIG. 4B and the photosensitive device 30 in FIG. 3A and FIG. superior.

Please refer to FIG. 4A and FIG. 4B , the photosensitive device 40 further includes a second substrate 300 , a filter element 312 , a filter element 314 and a light shielding structure 410 .

The second substrate 300 is disposed relative to the first substrate 100 . The filter element 312 , the filter element 314 and the light shielding structure 410 are disposed on the second substrate 300 . The filter element 312 and the filter element 314 are respectively disposed in the pixel PX2 and the pixel PX1 . In some embodiments, the filter elements 312 and 314 include filter elements of different colors. In FIG. 4B , the pixel PX2 and the pixel PX1 are provided with a filter element 312 and a filter element 314 , however, it does not mean that every pixel of the photosensitive device 40 must be provided with a filter element. Specifically, the photosensitive device 40 may be provided with a filter element in each pixel, or may be provided with a filter element only in some pixels.

The light shielding structure 410 is disposed on the filter element 312 and the filter element 314 , and has a plurality of openings O overlapping the second pinhole PH2 , the first pinhole PH1 and the first dummy pinhole DPH1 in the first direction DR1 .

In this embodiment, the first lens array ML1A is located on the filter element 312 and the filter element 314 , and is disposed in the opening O of the light shielding structure 410 . In this embodiment, the first lens array ML1A includes the first lens ML1 and the first dummy lens DML1 arranged in an array in the second direction DR2 and the third direction DR3, and the first lens ML1 and the first dummy lens DML1 are respectively Set in opening O. The filter element 312 and the filter element 314 are located between the second substrate 300 and the first lens ML1 and between the second substrate 300 and the first dummy lens DML1.

In this embodiment, there is a gap GP between the first substrate 100 and the second substrate 300 . The gap GP has a first side S1 close to the first substrate 100 and a second side S2 close to the second substrate 300 . The first photosensitive element SE1 and the second photosensitive element SE2 are located between the first side S1 of the gap GP and the first substrate 100 . The first lens ML1 and the first dummy lens DML1 are located at the second side S2 of the gap GP. In some embodiments, gap GP includes air. In some embodiments, the air in gap GP is at low vacuum.

The spacer PS is located between the first substrate 100 and the second substrate 300 . The first dummy lens DML1 contacts the top surface of the spacer PS, and the first lens ML1 does not contact the top surface of the spacer PS.

FIG. 5 is a schematic cross-sectional view of a photosensitive device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 5 follows the component numbers and part of the content of the embodiment in FIG. 4A and FIG. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here. The photosensitive device 50 includes a plurality of pixels, and FIG. 5 only shows two pixels PX1 and PX2 of the photosensitive device 50 .

The main difference between the photosensitive device 50 in FIG. 5 and the photosensitive device 40 in FIGS. 4A and 4B is that the photosensitive device 50 further includes a second lens array ML2A.

Please refer to FIG. 5 , the second lens array ML2A is located on the first collimation layer 210 . In this embodiment, the second lens array ML2A is disposed on the second collimation layer 220 . In this embodiment, the second lens array ML2A includes a second lens ML2 and a second dummy lens DML2 arranged in an array in the second direction DR2 and the third direction DR3 (please refer to FIG. 4A ). In some embodiments, the second lens ML2 fills the second pinhole PH2 of the second collimation layer 220 .

The first lens ML1 and the second lens ML2 overlap the first photosensitive element SE1 , the second photosensitive element SE2 , the first pinhole PH1 and the second pinhole PH2 in the first direction DR1 . The second dummy lens DML2 overlaps the first dummy pinhole DPH1 and the first dummy lens DML1 in the first direction DR1 . The first dummy lens DML1 and the second dummy lens DML2 do not overlap the first photosensitive element SE1 and the second photosensitive element SE2 in the first direction DR1 , and the first dummy lens DML1 and the second dummy lens DML2 overlap in the first direction DR1 The first control circuit CC1 and the second control circuit CC2. The second collimation layer 220 is located between the first dummy pinhole DPH1 and the first dummy lens DML1 and between the first dummy pinhole DPH1 and the second dummy lens DML2 in the first direction DR1, and shields the first dummy pinhole. The DPH1, therefore, can prevent the light rays passing through the first dummy lens DML1 and the second dummy lens DML2 from causing negative effects on the first control circuit CC1 and the second control circuit CC2.

The first lens ML1 and the first dummy lens DML1 have the same first distance X1 in the second direction DR2 (please refer to FIG. 4A ), and the first lens ML1 and the first dummy lens DML1 are in the third direction DR3 (please refer to FIG. 4A) have the same second spacing X2. Similarly, the second lens ML2 and the second dummy lens DML2 have the same first distance X1 in the second direction DR2, and the second lens ML2 and the second dummy lens DML2 have the same second distance in the third direction DR3 X2.

In some embodiments, the methods of forming the first lens array ML1A and the second lens array ML2A both include: forming a photoresist material layer, and then patterning the aforementioned photoresist material layer to form lenses and dummy lenses. In this embodiment, the first lens array ML1A and the second lens array ML2A are respectively formed on the second substrate 300 and the first substrate 100 . Then the first substrate 100 and the second substrate 300 are combined together.

In this embodiment, the disposition of the first dummy lens DML1 and the second dummy lens DML2 can improve the problem of uneven distribution of shapes and thicknesses of the first lens ML1 and the second lens ML2 .

In some embodiments, the curvature radius R1 of the first lens ML1 and the first dummy lens DML1 and the curvature radius R2 of the second lens ML2 and the second dummy lens DML2 are in a range of 7 μm to 25 μm. In some embodiments, the thickness H3 of the first lens ML1 and the first dummy lens DML1 and the thickness H4 of the second lens ML2 and the second dummy lens DML2 are in a range of 2 μm to 6 μm. In some embodiments, the curvature radius R1 is the same as or different from the curvature radius R2, the thickness H3 is the same as or different from the thickness H4, and the material of the first lens ML1 and the first dummy lens DML1 are the same or different from the material of the second lens ML2 and the second lens ML2. The material of the dummy lens DML2.

The first lens ML1 and the first dummy lens DML1 are located in the gap GP close to the second side S2 of the second substrate 300 , and the second lens ML2 and the second dummy lens DML2 are located in the gap GP close to the first side S1 of the first substrate 100 . The second lens ML2 overlaps the first lens ML1 in the first direction DR1 , and the second dummy lens DML2 overlaps the first dummy lens DML1 in the first direction DR1 . By overlapping the first lens ML1 and the second lens ML2, light can be better focused on the first photosensitive element SE1 and the second photosensitive element SE2.

In this embodiment, the spacer PS is located between the first substrate 100 and the second substrate 300 . The first dummy lens DML1 contacts the top surface of the spacer PS, and the spacer PS covers the second dummy lens DML2.

FIG. 6 is a schematic cross-sectional view of a photosensitive device according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 6 follows the component numbers and part of the content of the embodiment of FIG. 1A and FIG. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

Please refer to FIG. 6 , in this embodiment, the photosensitive device 60 includes a first photosensitive unit SU1 , a first alignment layer 210 , and a first lens array ML1A. In this embodiment, the photosensitive device 10 further includes a first substrate 100, a first flat layer 130, a second alignment layer 220, a second flat layer 140, a light shielding structure 230, a third flat layer 150, a first oxide layer 212 , the second oxide layer 222 and the third oxide layer 232 .

The first photosensitive unit SU1 is located on the first substrate 100 and includes a first photosensitive element SE1 and a first control circuit CC1 . In this embodiment, the first control circuit CC1 includes an active element T. The active device T includes a gate G, a channel layer CH, a source S and a drain D.

The channel layer CH is located on the first substrate 100 and includes a first doped region CH1, a second doped region CH2 and a third doped region CH3, wherein the first doped region CH1, the second doped region CH2 and the second doped region CH2 The three doped regions CH3 include, for example, different doping concentrations. The second doped region CH2 is located between the first doped region CH1 and the third doped region CH3. The gate G overlaps the third doped region CH3, and the gate insulating layer GI is located between the gate G and the channel layer CH. The interlayer dielectric layer ILD is located on the gate G and the gate insulating layer GI. The source S and the drain D are located on the interlayer dielectric layer ILD, and the source S and the drain D are electrically connected to the first doped region CH1.

In some embodiments, the channel layer CH is a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (for example: indium zinc oxide, indium gallium Zinc oxide or other suitable materials, or a combination of the above materials) or other suitable materials or a combination of the above materials. In some embodiments, the materials of the gate G, the source S, and the drain D include metals such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, etc. Alloys mentioned above or other conductive materials. In this embodiment, the active element T is a top-gate thin film transistor, but the invention is not limited thereto. In other embodiments, the active element T is a bottom gate thin film transistor, a double gate thin film transistor or other types of thin film transistors.

The first photosensitive element SE1 includes a first electrode BE, a photosensitive layer PSL, and a second electrode TE. The first electrode BE is electrically connected to the drain D of the active device T. As shown in FIG. In this embodiment, the first electrode BE and the drain D belong to the same film layer, and the first electrode BE and the drain D are integrally formed, but the invention is not limited thereto. In other embodiments, the first electrode BE and the drain D belong to different film layers.

The photosensitive layer PSL is located on the first electrode BE. For example, the photosensitive layer PSL is directly formed on the first electrode BE. In some embodiments, the photosensitive layer PSL includes semiconductor stacked layers, for example, stacked layers including P-type semiconductors, intrinsic semiconductors, and N-type semiconductors. In other embodiments, the material of the photosensitive layer PSL includes a silicon-rich silicon oxide layer, a silicon-rich silicon nitride layer, a silicon-rich silicon oxynitride layer, a silicon-rich silicon carbide layer, a silicon-rich silicon carbide layer, and a hydrogenated silicon-rich silicon oxide layer. layer, hydrogenated silicon-rich silicon nitride layer, hydrogenated silicon-rich silicon carbide layer, hydrogenated amorphous silicon, hydrogenated microcrystalline silicon, hydrogenated polysilicon or combinations thereof or other photosensitive materials.

The second electrode TE is located on the photosensitive layer PSL. For example, the second electrode TE is directly formed on the photosensitive layer PSL. In this embodiment, the insulating layer 110 is located on the interlayer dielectric layer ILD, the photosensitive layer PSL and the first electrode BE, and the second electrode TE is connected to the photosensitive layer PSL through the opening 110H in the insulating layer 110 . In this embodiment, the opening 110H overlaps the first pinhole PH1 in the first direction DR1 . In some embodiments, the second electrode TE includes a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or a stacked layer of at least two of the above or other conductive materials.

The planarization layer 120 is on the second electrode TE. The buffer layer 122 is located on the planarization layer 120 . The first alignment layer 210 is located on the buffer layer 122 . The first oxide layer 212 is located on the surface of the first alignment layer 210 . The first pinhole PH1 and the first dummy pinhole DPH1 penetrate the first alignment layer 210 and the first oxide layer 212 . The first planarization layer 130 is located on the first oxide layer 212 . The second alignment layer 220 is located on the first planarization layer 130 . The second oxide layer 222 is located on the surface of the second alignment layer 220 . The second pinhole PH2 penetrates the second alignment layer 220 and the second oxide layer 222 . The second planarization layer 140 is on the second oxide layer 222 . The light shielding structure 230 is located on the second flat layer 140 . The third oxide layer 232 is located on the surface of the light shielding structure 230 . The opening O penetrates the light shielding structure 230 and the third oxide layer 232 . The third planarization layer 150 is on the third oxide layer 232 . The first lens array ML1A is located on the third flat layer 150 and is disposed corresponding to the opening O. Referring to FIG.

In this embodiment, the disposition of the first dummy lens DML1 can improve the problem of uneven distribution of the shape and thickness of the first lens ML1.

10, 20, 30, 40, 50, 60: photosensitive device 100: first substrate 110: insulating layer 110H, O, O1, O2: Open 120: flat layer 122: buffer layer 130: The first flat layer 140: second flat layer 150: The third flat layer 210: The first collimation layer 212: first oxide layer 220: Second collimation layer 222: second oxide layer 230: shading structure 232: The third oxide layer a-a': line BE: first electrode CC1: the first control circuit CC2: Second control circuit CH: channel layer CH1: the first doped region CH2: the second doped region CH3: the third doped region D: drain DML1: the first dummy lens DML2: second dummy lens DR1: first direction DR2: Second direction DR3: Third direction DPH1: First dummy pinhole D1, D2: aperture D3: width G: Gate GI: gate insulating layer H1, H2: Depth H3, H4: Thickness ILD: interlayer dielectric layer ML1: first lens ML2: second lens ML1A: first lens array PH1: first pinhole PH2: second pinhole PH1A: First pinhole array PS: spacer PSL: photosensitive layer PX1, PX2, PX3, PX4: pixels R1, R2: radius of curvature S: source S1: first side S2: second side SE1: The first photosensitive element SE2: Second photosensitive element SU1: The first photosensitive unit SU2: Second photosensitive unit T: active component TE: second electrode TR1: First Trench TR2: Second Trench X1: first spacing X2: second spacing

FIG. 1A is a schematic top view of a photosensitive device according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the photosensitive device shown in FIG. 1A . FIG. 2A is a schematic top view of a photosensitive device according to an embodiment of the present invention. FIG. 2B is a schematic cross-sectional view of the photosensitive device of FIG. 2A . FIG. 3A is a schematic top view of a photosensitive device according to an embodiment of the present invention. FIG. 3B is a schematic cross-sectional view of the photosensitive device of FIG. 3A . FIG. 4A is a schematic top view of a photosensitive device according to an embodiment of the present invention. FIG. 4B is a schematic cross-sectional view of the photosensitive device of FIG. 4A . FIG. 5 is a schematic cross-sectional view of a photosensitive device according to an embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a photosensitive device according to an embodiment of the present invention.

10: photosensitive device

100: first substrate

130: The first flat layer

140: second flat layer

210: The first collimation layer

220: Second collimation layer

230: shading structure

a-a': line

CC1: the first control circuit

DML1: the first dummy lens

DR1: first direction

DPH1: First dummy pinhole

D1, D2: aperture

D3: width

H1, H2: Depth

H3: Thickness

ML1: first lens

ML1A: first lens array

O: open

PH1: first pinhole

PH1A: First pinhole array

R1: radius of curvature

SE1: The first photosensitive element

SU1: The first photosensitive unit

Claims (20)

A photosensitive device, comprising: A first photosensitive unit, comprising: a first photosensitive element; and a first control circuit electrically connected to the first photosensitive element; A first alignment layer, located on the first photosensitive element, and has a first pinhole array, the first pinhole array includes a first pinhole and a first dummy pinhole; A first lens array is located on the first collimating layer and includes a first lens and a first dummy lens, wherein the first lens overlaps the first photosensitive element and the first dummy lens in a first direction A pinhole, and the first dummy lens overlaps the first dummy pinhole in the first direction. The photosensitive device as claimed in claim 1, wherein the first dummy lens does not overlap the first photosensitive element in the first direction. The photosensitive device as described in claim 1, further comprising: a second alignment layer located on the first alignment layer, wherein the second alignment layer has a second pinhole overlapping the first pinhole in the first direction, wherein the second pinhole The diameter of the hole is larger than the diameter of the first pinhole. The photosensitive device as described in claim 3, further comprising: a first flattening layer located between the first collimating layer and the second collimating layer; a second planar layer on the second collimating layer; and A light-shielding structure located on the second flat layer, wherein the light-shielding structure has a plurality of openings overlapping the first pinhole and the first dummy pinhole in the first direction, and the first lens and the first dummy pinhole A dummy lens is respectively disposed in the openings. The photosensitive device as described in claim 3, further comprising: a first flattening layer located between the first collimating layer and the second collimating layer; a second planar layer on the second collimating layer; and a light-shielding structure located on the second planar layer, wherein the light-shielding structure has a plurality of openings overlapping the first pinhole and the first dummy pinhole in the first direction; and A third flat layer is located on the light-shielding structure, wherein the first lens and the first dummy lens are located on the third flat layer, and the first lens overlaps the corresponding opening in the first direction. The photosensitive device as described in claim 3, further comprising: a first flat layer located between the first alignment layer and the second alignment layer, and the first flat layer has a first groove overlapping the first dummy pinhole, and the second alignment layer A straight layer is filled into the first trench. The photosensitive device as claimed in claim 6, wherein the second alignment layer contacts the first alignment layer. The photosensitive device as described in claim 6, further comprising: A second photosensitive unit, comprising: a second photosensitive element; and a second control circuit electrically connected to the second photosensitive element, wherein the first alignment layer has a plurality of first pinholes and a plurality of first dummy pinholes; and A plurality of first lenses are located on the first collimation layer, and one of the first lenses overlaps the first photosensitive element and one of the first pinholes in the first direction, and the other of the first lenses a lens overlaps the second photosensitive element and the other first pinhole in the first direction; a plurality of first dummy lenses located on the first collimation layer, wherein the first dummy lenses respectively overlap the corresponding first dummy pinholes in the first direction and do not overlap the first photosensitive element and the second photosensitive element; and A second flat layer is located on the second alignment layer, and the second flat layer has a second groove overlapping the second photosensitive unit, and the first groove overlaps the first photosensitive unit. The photosensitive device as described in claim 1, further comprising: A first substrate and a second substrate, wherein there is a gap between the first substrate and the second substrate, wherein the first photosensitive element is located in the gap near a first side of the first substrate and the first substrate between, and the first lens and the first dummy lens are located at a second side of the gap close to the second substrate. The photosensitive device as described in Claim 9, further comprising: A spacer is located between the first substrate and the second substrate, wherein the first dummy lens contacts the top surface of the spacer. The photosensitive device as described in Claim 9, further comprising: A filter element is located between the second substrate and the first lens and between the second substrate and the first dummy lens. The photosensitive device as described in Claim 9, further comprising: a second lens located on the first side of the gap, wherein the second lens overlaps the first lens in the first direction; and A second dummy lens is located on the first side of the gap, and the second dummy lens overlaps the first dummy lens in the first direction. The photosensitive device as described in claim 12, further comprising: A spacer is located between the first substrate and the second substrate, wherein the first dummy lens contacts the top surface of the spacer, and the spacer covers the second dummy lens. The photosensitive device according to claim 1, wherein the first dummy lens and the first dummy pinhole overlap the first control circuit in the first direction. The photosensitive device as claimed in claim 1, wherein the first lens array includes a plurality of first lenses and a plurality of first dummy lenses arranged in an array in a second direction and a third direction, wherein the first lenses and the first dummy lenses have the same first distance in the second direction, and the first lenses and the first dummy lenses have the same second distance in the third direction. The photosensitive device as claimed in claim 1, wherein the first lens and the first dummy lens have the same radius of curvature, the same thickness, and the same material. The photosensitive device according to claim 1, wherein the first pinhole array includes a plurality of first pinholes and a plurality of first dummy pinholes arranged in an array in a second direction and a third direction, wherein the The first pinholes and the first dummy pinholes have the same first distance in the second direction, and the first pinholes and the first dummy pinholes have the same first distance in the second direction. Two spacing. The photosensitive device as claimed in claim 1, wherein the first pinhole and the first dummy pinhole have the same aperture. The photosensitive device as described in claim 1, further comprising: A first oxide layer is located on the surface of the first alignment layer, and the first pinhole and the first dummy pinhole penetrate the first alignment layer and the first oxide layer. The photosensitive device as described in claim 1, further comprising: a second alignment layer located on the first alignment layer, wherein the second alignment layer has a second pinhole overlapping the first pinhole in the first direction, wherein the second alignment layer The straight layer covers the first dummy pinhole in the first direction.

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