TW202205693A - Light emitting device package having glue on two sides - Google Patents
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- TW202205693A TW202205693A TW109125210A TW109125210A TW202205693A TW 202205693 A TW202205693 A TW 202205693A TW 109125210 A TW109125210 A TW 109125210A TW 109125210 A TW109125210 A TW 109125210A TW 202205693 A TW202205693 A TW 202205693A
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本發明有關於光電元件,特别是關於一種具有雙面膠體的發光二極體封裝結構。The present invention relates to optoelectronic components, in particular to a light emitting diode packaging structure with double-sided colloid.
發光二極體是一種固態的半導體光電元件,用以將電能轉化爲光能。發光二極體包含一個半導體晶片。晶片的負極連接在一個金屬支架上,晶片的正極連接電源,且整個晶片被環氧樹脂封裝。發光二極體晶片包含P型半導體以及N型半導體。當電流通過焊線作用於這個晶片的時候,晶片就會發光。發光二極體晶片需要受到保護,以免遭受灰塵、潮濕、靜電放電(ESD)和機械破壞。而施加電流時,在P-N內産生的熱量需要去除,以防發光二極體晶片過熱。先前技術不斷提出新材料以及新的封裝結構將發光二極體晶片産生的熱量傳導出來。A light-emitting diode is a solid-state semiconductor optoelectronic component that converts electrical energy into light energy. A light-emitting diode consists of a semiconductor wafer. The negative electrode of the chip is connected to a metal support, the positive electrode of the chip is connected to the power supply, and the whole chip is encapsulated by epoxy resin. The light-emitting diode wafer includes P-type semiconductors and N-type semiconductors. When current is applied to the wafer through the wire, the wafer glows. LED chips need to be protected from dust, moisture, electrostatic discharge (ESD) and mechanical damage. When current is applied, the heat generated in the P-N needs to be removed to prevent the LED chip from overheating. The prior art continues to propose new materials and new packaging structures to conduct the heat generated by the light emitting diode chips away.
圖1、圖2以及圖3所示為先前技術中的發光二極體封裝結構1。其中,圖1是前視剖面示意圖,圖2是俯視圖,圖3是底視圖。如圖所示發光二極體封裝結構1包含印刷電路板2、發光二極體晶片3、第一焊線4、第二焊線5以及透明膠體6。印刷電路板2的頂面設置固晶墊2c以及焊線墊2d,印刷電路板2的底面設置二焊接墊2e。發光二極體晶片3設置於固晶墊2c,第一焊線4以及第二焊線5分別將發光二極體晶片3的二電極連接至固晶墊2c以及焊線墊2d。透明膠體6,例如環氧樹脂或矽膠,通過模制的方法,包覆發光二極體晶片3、第一焊線4以及第二焊線5,以保護發光二極體晶片3。FIG. 1 , FIG. 2 and FIG. 3 show a light emitting
如圖4、圖5以及圖6所示,是發光二極體封裝結構1實際焊接於二個金屬線200的情況。金屬線200可以是一般裸線,也可以是漆包線或膠包線外露的部分。金屬線200分別焊接到二焊接墊2e,透過第一焊線4、第二焊線5、固晶墊2c以及焊線墊2d的連接,提供電力到發光二極體晶片3,使得發光二極體晶片3發光。金屬線200通常為銅線,但不排除其他具有高導電特性的金屬。然而,受到印刷電路板2的遮蔽,發光二極體封裝結構1發光角度只有180°,無法進一步提昇發光角度。As shown in FIG. 4 , FIG. 5 and FIG. 6 , the light emitting
此外,上述發光二極體封裝結構1焊接於金屬線200的過程中,事先在二金屬線200上錫膏,再放置二焊接墊2e到二金屬線200。然後發光二極體封裝結構1連同金屬線200通過回焊爐進行回流焊。在過回流焊的過程中,因錫在高溫下流動性良好,發光二極體封裝結構1會隨著錫的流動而偏移,造成生產有一定比例的開路,短路或傾斜等不良。生產良率偏低,需要重工,造成人工材料的浪費,增加產品成本,降低競爭力。In addition, in the process of soldering the
基於上述技術問題,本發明提出一種具有雙面膠體的發光二極體封裝結構,用以解決先前技術中存在的缺陷。Based on the above technical problems, the present invention proposes a light-emitting diode packaging structure with double-sided colloids to solve the defects in the prior art.
本發明提出一種具有雙面膠體的發光二極體封裝結構,包含一金屬支架、一發光二極體晶片以及一透明膠體。金屬支架具有一頂面以及一底面,金屬支架包含一第一貼片焊盤以及一第二貼片焊盤,第一貼片焊盤以及第二貼片焊盤之間保持一透光間隙,透光間隙連通頂面以及底面,並且使第一貼片焊盤以及第二貼片焊盤之間不互相接觸。發光二極體晶片設置於第一貼片焊盤,並且對應於頂面;其中,發光二極體晶片的一第一電極以及一第二電極分別電性連接於第一貼片焊盤以及第二貼片焊盤。透明膠體覆蓋於頂面以及底面,並且包覆發光二極體晶片以及填充透光間隙,並且第一貼片焊盤以及第二貼片焊盤的外側邊緣分別外露於透明膠體。The present invention provides a light-emitting diode packaging structure with double-sided colloid, comprising a metal bracket, a light-emitting diode chip and a transparent colloid. The metal bracket has a top surface and a bottom surface, the metal bracket includes a first patch pad and a second patch pad, and a transparent gap is maintained between the first patch pad and the second patch pad, The light-transmitting gap communicates with the top surface and the bottom surface, and prevents the first patch pad and the second patch pad from contacting each other. The light-emitting diode chip is arranged on the first patch pad and corresponds to the top surface; wherein, a first electrode and a second electrode of the light-emitting diode chip are electrically connected to the first patch pad and the second electrode respectively. Two SMD pads. The transparent colloid covers the top surface and the bottom surface, wraps the light-emitting diode chip and fills the light-transmitting gap, and the outer edges of the first patch pad and the second patch pad are respectively exposed to the transparent colloid.
在至少一實施例中,具有雙面膠體的發光二極體封裝結構更包含一第一焊線以及一第二焊線,第一焊線連接於第一電極以及第一貼片焊盤,並且第二焊線連接於第二電極以及第二貼片焊盤。In at least one embodiment, the LED package structure with double-sided glue further includes a first bonding wire and a second bonding wire, the first bonding wire is connected to the first electrode and the first chip pad, and The second bonding wire is connected to the second electrode and the second chip pad.
在至少一實施例中,透明膠體具有一上模製膠體以及一下模製膠體,分別結合於頂面以及底面。In at least one embodiment, the transparent colloid has an upper molding colloid and a lower molding colloid, which are respectively combined with the top surface and the bottom surface.
在至少一實施例中,上模製膠體以及下模製膠體透過透光間隙互相連接,且上模製膠體包覆發光二極體晶片、第一焊線以及第二焊線。In at least one embodiment, the upper molding colloid and the lower molding colloid are connected to each other through the light-transmitting gap, and the upper molding colloid covers the light-emitting diode chip, the first bonding wire and the second bonding wire.
在至少一實施例中,具有雙面膠體的發光二極體封裝結構更包含二金屬線,第一貼片焊盤以及第二貼片焊盤對應底面且外露於透明膠體的部份,分別焊接到二金屬線。In at least one embodiment, the light-emitting diode package structure with double-sided glue further includes two metal wires, the first patch pad and the second patch pad corresponding to the bottom surface and exposed to the transparent glue are welded respectively. to two metal wires.
在至少一實施例中,下模製膠體位於二金屬線之間。In at least one embodiment, the lower molding compound is located between the two metal wires.
本發明通過透明膠體對二金屬線進行限位。亦即,即使是在回流焊中錫膏融化而導致二金屬線位移,二金屬線最多也只是變成對透明膠體夾持,但仍維持對第一貼片焊盤以及第二貼片焊盤的接觸,維持良好的焊接效果,提升生產過程中產品的良品率,提高勞動效率,節約勞動成本,增加競爭力。In the present invention, the position of the two metal wires is limited by the transparent colloid. That is, even if the solder paste melts during reflow soldering and the two metal lines are displaced, the two metal lines only become clamped to the transparent colloid at most, but still maintain the contact between the first and second patch pads. Contact, maintain a good welding effect, improve the yield of products in the production process, improve labor efficiency, save labor costs, and increase competitiveness.
參閱圖7、圖8以及圖9所示,為本發明實施例提出的一種具有雙面膠體的發光二極體封裝結構100,包含一金屬支架110、一發光二極體晶片120、一第一焊線131、一第二焊線132以及一透明膠體140。Referring to FIG. 7 , FIG. 8 , and FIG. 9 , a light-emitting
如圖7、圖8以及圖9所示,金屬支架110以金屬製成,具有良好的導電率以及導熱率。金屬支架110具有頂面113以及底面114。金屬支架110具有一透光間隙G,透光間隙G連通頂面113以及底面114。具體而言,金屬支架110包含第一貼片焊盤111以及第二貼片焊盤112,第一貼片焊盤111以及第二貼片焊盤112之間保持透光間隙G,透光間隙G連通頂面113以及底面114,並且使第一貼片焊盤111以及第二貼片焊盤112之間不互相接觸。As shown in FIG. 7 , FIG. 8 and FIG. 9 , the
如圖7、圖8以及圖9所示,第一貼片焊盤111上有一固晶位置,且對應於頂面113。發光二極體晶片120設置於固晶位置,亦即發光二極體晶片120設置於第一貼片焊盤111,並且對應於金屬支架110的頂面113。發光二極體晶片120具有第一電極121以及第二電極122。如圖7、圖8以及圖9所示,第一焊線131連接於第一電極121以及第一貼片焊盤111,第二焊線132連接於第二電極122以及第二貼片焊盤112,藉以透過第一焊線131以及第二焊線132將發光二極體晶片120電性連接至第一貼片焊盤111以及第二貼片焊盤112。As shown in FIG. 7 , FIG. 8 and FIG. 9 , there is a die bonding position on the
如圖7、圖8以及圖9所示,透明膠體140覆蓋於頂面113以及底面114,並且包覆發光二極體晶片120、第一焊線131、第二焊線132,以及填充透光間隙G。同時,第一貼片焊盤111以及第二貼片焊盤112的外側邊緣分別外露於透明膠體140,亦即,金屬支架110的相對兩側邊外露於透明膠體140。As shown in FIG. 7 , FIG. 8 and FIG. 9 , the
如圖7所示,透明膠體140可區分為上模製膠體141以及下模製膠體142,分別結合於頂面113以及底面114,同時填充於透光間隙G而透過透光間隙G互相連接。於一具體實施例中,可先透過下模製膠體142結合於底面114,以結合第一貼片焊盤111以及第二貼片焊盤112成金屬支架110,之後再進行發光二極體晶片120的貼附以及焊線131,132的焊接,再設置上模製膠體141於頂面113以包覆發光二極體晶片120、第一焊線131以及第二焊線132。As shown in FIG. 7 , the
參閱圖10、圖11以及圖12所示,具有雙面膠體的發光二極體封裝結構100用於焊接於二金屬線200上。金屬線200可以是一般裸線,也可以是漆包線或膠包線外露的部分。第一貼片焊盤111以及第二貼片焊盤112對應底面114且外露於透明膠體140的部份,分別焊接到二金屬線200,透過第一焊線131、第二焊線132、第一貼片焊盤111以及第二貼片焊盤112的連接,提供電力到發光二極體晶片120,使得發光二極體晶片120發光。金屬線200通常為銅線,但不排除其他具有高導電特性的金屬。透過多個具有雙面膠體的發光二極體封裝結構100依序焊接於二金屬線200,以可形成可多方向發光的燈串。Referring to FIG. 10 , FIG. 11 and FIG. 12 , the light emitting
如圖7至圖12所示,當透過二金屬線200提供電力而對第一電極121以及第二電極122施以一電壓差時,發光二極體晶片120發出光線。此時,透明膠體140可作為導光,使得光線朝頂面113上方發散。同時,透明膠體140也導引光線通過透光間隙G,並經過下模製膠體142,而向下方發散。因此,本發明實施例的具有雙面膠體的發光二極體封裝結構100可以達成360°發光,同時,以金屬製成的金屬支架110有助於導熱以協助發光二極體晶片120散熱。此外,金屬支架110表面也可以透過電鍍等方式設置反射層,加強向上或向下的強度,避免金屬支架110表面吸收光線降低亮度。透明膠體140中也可以摻雜反光、螢光或顏料等可以改變發光狀態的粒子。As shown in FIG. 7 to FIG. 12 , when a voltage difference is applied to the
如圖10所示,由具有雙面膠體的發光二極體封裝結構100的前視剖面示意圖觀察,第一貼片焊盤111以及第二貼片焊盤112的外側邊緣分別突出於下模製膠體142,並且下模製膠體142與貼片焊盤111,112的交界處形成L型截面結構,二金屬線200位於此L型截面結構中,並且分別焊接於第一貼片焊盤111以及第二貼片焊盤112,使得下模製膠體142位於二金屬線200之間,而可利用下模製膠體142對二金屬線200進行限位。亦即,即使是在回流焊中錫膏融化而導致二金屬線200位移,二金屬線200最多也只是變成對下模製膠體142夾持,但仍維持對第一貼片焊盤111以及第二貼片焊盤112的接觸,維持良好的焊接效果,提升生產過程中產品的良品率,提高勞動效率,節約勞動成本,增加競爭力。As shown in FIG. 10 , as viewed from the front cross-sectional schematic diagram of the light-emitting
1:發光二極體封裝結構
2:印刷電路板
3:發光二極體晶片
4:第一焊線
5:第二焊線
6:透明膠體
2c:固晶墊
2d:焊線墊
2e:焊接墊
100:具有雙面膠體的發光二極體封裝結構
110:金屬支架
111:第一貼片焊盤
112:第二貼片焊盤
113:頂面
114:底面
120:發光二極體晶片
121:第一電極
122:第二電極
131:第一焊線
132:第二焊線
140:透明膠體
141:上模製膠體
142:下模製膠體
G:透光間隙
200:金屬線1: LED package structure
2: Printed circuit board
3: LED chip
4: The first wire
5: The second wire
6: Transparent colloid
2c: die
圖1是先前技術中,發光二極體封裝結構的前視剖面示意圖。 圖2是先前技術中,發光二極體封裝結構的俯視圖。 圖3是先前技術中,發光二極體封裝結構的底視圖。 圖4是先前技術中,發光二極體封裝結構焊接於金屬線的前視剖面示意圖。 圖5是先前技術中,發光二極體封裝結構焊接於金屬線的俯視圖。 圖6是先前技術中,發光二極體封裝結構焊接於金屬線的底視圖。 圖7是本發明實施例中,發光二極體封裝結構的前視剖面示意圖。 圖8是本發明實施例中,發光二極體封裝結構的俯視圖。 圖9是本發明實施例中,發光二極體封裝結構的底視圖。 圖10是本發明實施例中,發光二極體封裝結構焊接於金屬線的前視剖面示意圖。 圖11是本發明實施例中,發光二極體封裝結構焊接於金屬線的俯視圖。 圖12是本發明實施例中,發光二極體封裝結構焊接於金屬線的底視圖。FIG. 1 is a schematic cross-sectional front view of a light emitting diode package structure in the prior art. FIG. 2 is a top view of a light emitting diode package structure in the prior art. FIG. 3 is a bottom view of a light emitting diode package structure in the prior art. FIG. 4 is a schematic front cross-sectional view of a light emitting diode package structure welded to a metal wire in the prior art. FIG. 5 is a top view of the light emitting diode package structure welded to the metal wire in the prior art. FIG. 6 is a bottom view of the light emitting diode package structure welded to the metal wire in the prior art. FIG. 7 is a schematic cross-sectional front view of a light emitting diode packaging structure in an embodiment of the present invention. FIG. 8 is a top view of a light emitting diode package structure according to an embodiment of the present invention. FIG. 9 is a bottom view of a light emitting diode package structure according to an embodiment of the present invention. 10 is a schematic cross-sectional front view of the light emitting diode package structure welded to the metal wire according to the embodiment of the present invention. FIG. 11 is a top view of the light emitting diode package structure welded to the metal wire according to the embodiment of the present invention. FIG. 12 is a bottom view of the light emitting diode package structure welded to the metal wire according to the embodiment of the present invention.
100:具有雙面膠體的發光二極體封裝結構100: Light-emitting diode packaging structure with double-sided colloid
110:金屬支架110: Metal bracket
111:第一貼片焊盤111: The first patch pad
112:第二貼片焊盤112: The second patch pad
113:頂面113: Top surface
114:底面114: Underside
120:發光二極體晶片120: LED chip
121:第一電極121: The first electrode
122:第二電極122: Second electrode
131:第一焊線131: The first wire
132:第二焊線132: Second wire
140:透明膠體140: Transparent colloid
141:上模製膠體141: upper molding colloid
142:下模製膠體142: Lower molding colloid
G:透光間隙G: light transmission gap
200:金屬線200: metal wire
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