TWI731763B - Lateral light emitting device package - Google Patents
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- TWI731763B TWI731763B TW109126121A TW109126121A TWI731763B TW I731763 B TWI731763 B TW I731763B TW 109126121 A TW109126121 A TW 109126121A TW 109126121 A TW109126121 A TW 109126121A TW I731763 B TWI731763 B TW I731763B
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Abstract
Description
本發明有關於光電元件,特別是關於一種可側發光的發光二極體封裝結構。 The present invention relates to optoelectronic components, in particular to a light emitting diode package structure capable of side-emitting light.
發光二極體是一種固態的半導體光電元件,用以將電能轉化為光能。發光二極體包含一個半導體晶片。晶片的負極連接在一個金屬支架上,晶片的正極連接電源,且整個晶片被環氧樹脂封裝。發光二極體晶片包含P型半導體以及N型半導體。當電流通過焊線作用於這個晶片的時候,晶片就會發光。發光二極體晶片需要受到保護,以免遭受灰塵、潮濕、靜電放電(ESD)和機械破壞。而施加電流時,在P-N內產生的熱量需要去除,以防發光二極體晶片過熱。先前技術不斷提出新材料以及新的封裝結構將發光二極體晶片產生的熱量傳導出來。 A light emitting diode is a solid-state semiconductor optoelectronic element used to convert electrical energy into light energy. The light-emitting diode contains a semiconductor chip. The negative pole of the chip is connected to a metal support, the positive pole of the chip is connected to a power source, and the entire chip is encapsulated by epoxy resin. The light-emitting diode chip includes a P-type semiconductor and an N-type semiconductor. When the current is applied to the chip through the bonding wire, the chip will emit light. The LED chip needs to be protected from dust, humidity, electrostatic discharge (ESD) and mechanical damage. When a current is applied, the heat generated in the P-N needs to be removed to prevent the light-emitting diode chip from overheating. The prior art continues to propose new materials and new packaging structures to conduct heat generated by the light-emitting diode chip.
圖1、圖2以及圖3所示為先前技術中的發光二極體封裝結構1。其中,圖1是前視圖,圖2是俯視圖,圖3是底視圖。如圖所示發光二極體封裝結構1包含印刷電路板2、發光二極體晶片3、第一焊線4、第二焊線5以及模製膠體6。印刷電路板2的頂面設置固晶墊2c以及焊線墊2d,印刷電路板2的底面設置二焊接墊2e。發光二極體晶片3設置於固晶墊2c,第一焊線4以及第二焊線5分別將發光二極體晶片3的二電極連接至固晶墊2c以
及焊線墊2d。模製膠體6,例如環氧樹脂或矽膠,通過模制的方法,包覆發光二極體晶片3、第一焊線4以及第二焊線5,以保護發光二極體晶片3。
Fig. 1, Fig. 2 and Fig. 3 show the light emitting
如圖4、圖5以及圖6所示,是發光二極體封裝結構1實際焊接於二個金屬線200的情況。金屬線200可以是一般裸線,也可以是漆包線或膠包線外露的部分。金屬線200分別焊接到二焊接墊2e,透過第一焊線4、第二焊線5、固晶墊2c以及焊線墊2d的連接,提供電力到發光二極體晶片3,使得發光二極體晶片3發光。
As shown in FIG. 4, FIG. 5, and FIG. 6, the light emitting
如圖5以及圖6所示,從俯視圖或底視圖觀察,發光二極體晶片3實際發光的時候,僅有單側(俯視圖所看到的一側)能夠看到發光二極體晶片3充分發光。另一側(底視圖所看到的一側),發光二極體晶片3以及模製膠體6都是被印刷電路板2遮擋,使得發光二極體封裝結構1只能做到接近180度的發光。
As shown in Figures 5 and 6, when viewed from the top view or bottom view, when the LED chip 3 actually emits light, only one side (the side seen from the top view) can see the LED chip 3 sufficiently. Glow. On the other side (the side seen from the bottom view), the light-emitting diode chip 3 and the molded
基於上述技術問題,本發明提出一種可側發光的發光二極體封裝結構,用以解決先前技術中存在的缺陷。 Based on the above technical problems, the present invention proposes a side-emitting light emitting diode package structure to solve the defects in the prior art.
本發明提出一種可側發光的發光二極體封裝結構,包含一絕緣基板、一第一貼片焊盤、一第二貼片焊盤、一發光二極體晶片、一模製膠體以及二金屬線。絕緣基板具有一頂面、一底面、一第一側面以及一第二側面,第一側面與第二側面相對配置,且第一側面與第二側面連接頂面以及底面。第一貼片焊盤包覆於第一側面;第二貼片焊盤包覆於第二側面。第一貼片焊盤以及第二貼片焊盤共同包覆頂面並保持一第一間隙,第一貼片焊盤以及第二貼片焊盤共同包覆底面並保持一第二間隙。發光二極 體晶片設置於第一貼片焊盤,並且對應於頂面;其中,發光二極體晶片的一第一電極以及一第二電極分別電性連接於第一貼片焊盤以及第二貼片焊盤。模製膠體對應於頂面設置,局部地覆蓋於第一貼片焊盤以及第二貼片焊盤,並且包覆發光二極體晶片以及填充第一間隙。第一貼片焊盤以及第二貼片焊盤對應頂面以及底面的部份,分別焊接到二金屬線;定義通過頂面以及底面的一高度方向,二金屬線平行於高度方向配置。 The present invention provides a side-emitting light-emitting diode package structure, which includes an insulating substrate, a first patch pad, a second patch pad, a light-emitting diode chip, a molded colloid, and two metals line. The insulating substrate has a top surface, a bottom surface, a first side surface, and a second side surface. The first side surface and the second side surface are disposed opposite to each other, and the first side surface and the second side surface are connected to the top surface and the bottom surface. The first patch pad is wrapped on the first side surface; the second patch pad is wrapped on the second side surface. The first patch pad and the second patch pad jointly cover the top surface and maintain a first gap, and the first patch pad and the second patch pad jointly cover the bottom surface and maintain a second gap. LED The bulk chip is disposed on the first patch pad and corresponds to the top surface; wherein, a first electrode and a second electrode of the light-emitting diode chip are electrically connected to the first patch pad and the second patch, respectively Pad. The molding compound is arranged corresponding to the top surface, partially covers the first patch pad and the second patch pad, and covers the light-emitting diode chip and fills the first gap. The parts of the first patch pad and the second patch pad corresponding to the top surface and the bottom surface are respectively soldered to two metal wires; a height direction passing through the top surface and the bottom surface is defined, and the two metal wires are arranged parallel to the height direction.
在至少一實施例中,其中,模製膠體於高度方向具有一膠體厚度,且絕緣基板於高度方向具有一基板厚度,膠體厚度至少是基板厚度的二倍。 In at least one embodiment, wherein the molded gel has a gel thickness in the height direction, and the insulating substrate has a substrate thickness in the height direction, and the gel thickness is at least twice the thickness of the substrate.
在至少一實施例中,定義通過第一側面以及第二側面並且垂直於高度方向的一長度方向,並定義垂直於高度方向以及長度方向的一寬度方向,絕緣基板於長度方向的一基板長度,大於絕緣基板於寬度方向上的一基板寬度。 In at least one embodiment, a length direction passing through the first side surface and the second side surface and perpendicular to the height direction is defined, and a width direction perpendicular to the height direction and the length direction is defined, and a substrate length of the insulating substrate in the length direction is defined, A substrate width greater than the width of the insulating substrate in the width direction.
在至少一實施例中,基板長度至少是基板寬度的三倍。 In at least one embodiment, the length of the substrate is at least three times the width of the substrate.
在至少一實施例中,於寬度方向上,模製膠體的一膠體寬度等於基板寬度。 In at least one embodiment, in the width direction, a gel width of the molded gel is equal to the width of the substrate.
在至少一實施例中,於寬度方向上,第一貼片焊盤以及第二貼片焊盤的焊盤寬度等於基板寬度。 In at least one embodiment, in the width direction, the pad widths of the first patch pad and the second patch pad are equal to the width of the substrate.
在至少一實施例中,可側發光的發光二極體封裝結構更包含一第一焊線以及一第二焊線,第一焊線連接於第一電極以及第一貼片焊盤,並且第二焊線連接於第二電極以及第二貼片焊盤。 In at least one embodiment, the side-emitting light-emitting diode package structure further includes a first bonding wire and a second bonding wire. The first bonding wire is connected to the first electrode and the first patch pad, and the first bonding wire is connected to the first electrode and the first patch pad. The two bonding wires are connected to the second electrode and the second patch pad.
在至少一實施例中,模製膠體位於二金屬線之間。 In at least one embodiment, the molded gel is located between the two metal wires.
本發明透過模製膠體的厚度配置,使得模製膠體明顯突出於絕緣基板,從俯視圖或底視圖觀察,本發明中的模製膠體相較於現有技術的發光二極體封裝中的模製膠體大而突出,而提供較大的發光面積,有相對較好的發光效果。同時,本發明降低絕緣基板在寬度方向上的寬度,有效地減少通過模製膠體發出的光線被絕緣基板遮擋,達成360度發光。 According to the present invention, the thickness of the molded plastic body is configured so that the molded plastic body obviously protrudes from the insulating substrate. When viewed from a top view or a bottom view, the molded body in the present invention is compared with the molded body in the prior art light-emitting diode package. It is large and prominent, and provides a larger light-emitting area, and has a relatively good light-emitting effect. At the same time, the present invention reduces the width of the insulating substrate in the width direction, effectively reducing the light emitted by the molded colloid from being blocked by the insulating substrate, and achieving 360-degree light emission.
1:發光二極體封裝結構 1: LED package structure
2:印刷電路板 2: Printed circuit board
2c:固晶墊 2c: Bonding pad
2d:焊線墊 2d: wire bonding pad
2e:焊接墊 2e: soldering pad
3:發光二極體晶片 3: LED chip
4:第一焊線 4: The first wire
5:第二焊線 5: The second welding wire
6:模製膠體 6: Molded colloid
100:可側發光的發光二極體封裝結構 100: Side-emitting light-emitting diode package structure
110:第一貼片焊盤 110: The first patch pad
120:第二貼片焊盤 120: The second patch pad
130:絕緣基板 130: Insulating substrate
131:第一側面 131: First side
132:第二側面 132: second side
133:頂面 133: top surface
134:底面 134: Bottom
140:發光二極體晶片 140: LED chip
141:第一電極 141: first electrode
142:第二電極 142: second electrode
151:第一焊線 151: The first wire
152:第二焊線 152: The second wire
160:模製膠體 160: Molded colloid
200:金屬線 200: Metal wire
G1:第一間隙 G1: first gap
G2:第二間隙 G2: second gap
Gth:膠體厚度 Gth: Gel thickness
Sth:基板厚度 Sth: substrate thickness
SL:基板長度 SL: substrate length
SW:基板寬度 SW: substrate width
GW:膠體寬度 GW: colloid width
X:長度方向 X: length direction
Y:寬度方向 Y: width direction
Z:高度方向 Z: height direction
圖1是先前技術中,發光二極體封裝結構的前視圖。 FIG. 1 is a front view of a light emitting diode package structure in the prior art.
圖2是先前技術中,發光二極體封裝結構的俯視圖。 FIG. 2 is a top view of a light emitting diode package structure in the prior art.
圖3是先前技術中,發光二極體封裝結構的底視圖。 Fig. 3 is a bottom view of a light emitting diode package structure in the prior art.
圖4是先前技術中,發光二極體封裝結構焊接於金屬線的前視圖。 4 is a front view of the LED package structure welded to the metal wire in the prior art.
圖5是先前技術中,發光二極體封裝結構焊接於金屬線的俯視圖。 FIG. 5 is a top view of the LED package structure welded to the metal wire in the prior art.
圖6是先前技術中,發光二極體封裝結構焊接於金屬線的底視圖。 FIG. 6 is a bottom view of the LED package structure welded to the metal wire in the prior art.
圖7是本發明實施例中,發光二極體封裝結構的前視剖面示意圖。 FIG. 7 is a schematic front cross-sectional view of a light emitting diode package structure in an embodiment of the present invention.
圖8是本發明實施例中,發光二極體封裝結構的俯視圖。 Fig. 8 is a top view of a light emitting diode package structure in an embodiment of the present invention.
圖9是本發明實施例中,發光二極體封裝結構的底視圖。 Fig. 9 is a bottom view of a light emitting diode package structure in an embodiment of the present invention.
圖10是本發明實施例中,發光二極體封裝結構焊接於金屬線的底視圖。 FIG. 10 is a bottom view of the light emitting diode package structure welded to the metal wire in the embodiment of the present invention.
圖11是本發明實施例中,發光二極體封裝結構焊接於金屬線的前視剖面示意圖。 FIG. 11 is a front cross-sectional schematic diagram of a light emitting diode package structure welded to a metal wire in an embodiment of the present invention.
圖12是本發明實施例中,發光二極體封裝結構焊接於金屬線的後視剖面示意圖。 12 is a schematic rear view cross-sectional view of the light emitting diode package structure welded to the metal wire in the embodiment of the present invention.
圖13是本發明實施例中,發光二極體封裝結構焊接於金屬線的前視剖面示意圖。 FIG. 13 is a front cross-sectional schematic diagram of the light emitting diode package structure welded to the metal wire in the embodiment of the present invention.
參閱圖7、圖8以及圖9所示,為本發明實施例提出的一種可側發光的發光二極體封裝結構100,包含一絕緣基板130、一第一貼片焊盤110、一第二貼片焊盤120、一發光二極體晶片140、一第一焊線151、一第二焊線152以及一模製膠體160。
Referring to FIG. 7, FIG. 8, and FIG. 9, a side-emitting light-emitting
如圖7、圖8以及圖9所示,絕緣基板130用以提供電性絕緣。在一具體實施例中,絕緣基板130、第一貼片焊盤110以及第二貼片焊盤120的組合是印刷電路板。也就是說透過印刷電路板的製程,就可以直接製作出本發明所需要的絕緣基板130、第一貼片焊盤110以及第二貼片焊盤120。絕緣基板130不排除表面經過絕緣處理的金屬基板,或是絕緣的陶瓷基板,前述金屬基板或陶瓷基板可以提供良好的導熱散熱效果。
As shown in FIGS. 7, 8 and 9, the insulating
如圖7所示,絕緣基板130具有一頂面133、一底面134、一第一側面131以及一第二側面132。第一側面131與第二側面132相對配置,且第一側面131與第二側面132連接頂面133以及底面134。
As shown in FIG. 7, the insulating
如圖7、圖8以及圖9所示,第一貼片焊盤110以及第二貼片焊盤120分別包覆於第一側面131以及第二側面132。同時,第一貼片焊盤110以及第二貼片焊盤120分別延伸至頂面133以及底面134。第一貼片焊盤110以及第二貼片焊盤120共同包覆頂面133並保持一第一間隙G1,並且第一貼片焊盤110以及第二貼片焊盤120共同包覆底面134並保持一第二間隙G2。
As shown in FIG. 7, FIG. 8, and FIG. 9, the
如圖7、圖8以及圖9所示,第一貼片焊盤110上有一固晶位置,且對應於頂面133。發光二極體晶片140設置於固晶位置,亦即發光二極體晶片140設置於第一貼片焊盤110,並且對應於頂面133。發光二極體晶片140具有一第一電極141以及一第二電極142,分別電性連接於第一貼片焊盤110以及第二貼片焊盤120,藉以透過第一焊線151以及第二焊線152將發光二極體晶片140電性連接至第一貼片焊盤110以及第二貼片焊盤120。
As shown in FIG. 7, FIG. 8 and FIG. 9, there is a die bonding position on the
如圖7以及圖8所示,在本發明實施例中,可側發光的發光二極體封裝結構100更包含一第一焊線151以及一第二焊線152,第一焊線151連接於第一電極141以及第一貼片焊盤110,並且第二焊線152連接於第二電極142以及第二貼片焊盤120。
As shown in FIGS. 7 and 8, in the embodiment of the present invention, the side-emitting light-emitting
如圖7以及圖8所示,模製膠體160對應於頂面133設置,局部地覆蓋於第一貼片焊盤110以及第二貼片焊盤120,使得第一貼片焊盤110以及第二貼片焊盤120對應於第一側面131以及第二側面132的部份外露。模製膠體160包覆發光二極體晶片140、第一焊線151、第二焊線152,以及填充第一間隙G1。
As shown in FIGS. 7 and 8, the
如圖7、圖8以及圖9所示,定義通過頂面133以及底面134的一高度方向Z,模製膠體160於高度方向Z具有一膠體厚度Gth,且絕緣基板130於高度方向Z具有一基板厚度Sth,膠體厚度Gth大於基板厚度Sth。膠體厚度Gth至少是基板厚度Sth的二倍。定義通過第一側面131以及一第二側面132並且垂直於高度方向Z的一長度方向X,並定義垂直於高度方向Z以及長度方向X的一寬度方向Y,絕緣基板130於長度方向X的基板
長度SL,大於絕緣基板130於寬度方向Y上的一基板寬度SW。基板長度SL至少是基板寬度SW的三倍。此外,於寬度方向Y上,模製膠體160的一膠體寬度GW等於基板寬度SW。於寬度方向Y上,第一貼片焊盤110以及第二貼片焊盤120的焊盤寬度等於基板寬度SW,也就是在寬度方向Y上,第一貼片焊盤110以及第二貼片焊盤120完全覆蓋頂面133,並且在長度方向X上共同覆蓋頂面133並保持第一間隙G1。
As shown in FIGS. 7, 8 and 9, a height direction Z passing through the
參閱圖10、圖11以及圖12所示,可側發光的發光二極體封裝結構100更包含二金屬線200。金屬線200可以是一般裸線,也可以是漆包線或膠包線外露的部分。二金屬線200平行於高度方向Z配置。第一貼片焊盤110以及第二貼片焊盤120對應頂面133以及底面134的部份,分別焊接到二金屬線200。可側發光的發光二極體封裝結構100是以側向焊接於二金屬線200,金屬線200可以在頂面133以及底面134的邊緣接觸第一貼片焊盤110以及第二貼片焊盤120,並且透過焊料充分電性連接於第一貼片焊盤110以及第二貼片焊盤120。模製膠體160位於二金屬線200之間。
Referring to FIG. 10, FIG. 11 and FIG. 12, the side-emitting light-emitting
透過第一焊線151、第二焊線152、第一貼片焊盤110以及第二貼片焊盤120的連接,金屬線200提供電力到發光二極體晶片140,使得發光二極體晶片140發光。金屬線200通常為銅線,但不排除其他具有高導電特性的金屬。透過多個可側發光的發光二極體封裝結構100依序焊接於二金屬線200,就可以形成可多方向發光的燈串。
Through the connection of the
如圖11以及圖12所示,當透過二金屬線200提供電力而對第一電極141以及第二電極142施以一電壓差時,發光二極體晶片140發出光線。此時,不論從俯視圖或底視圖觀察可側發光的發光二極體封裝結構
100,發光二極體晶片140是朝向側向發光(朝向高度方向Z發光)。同時模製膠體160也是朝向側向突出(朝向高度方向Z突出),而可使得模製膠體160導光效果,在長度方向X或寬度方向Y上不會受到遮蔽,而在長度方向X以及寬度方向Y有良好的發光效果,朝向高度方向Z突出的模製膠體160,也可以減少光線被絕緣基板130遮蔽的程度,而使得可側發光的發光二極體封裝結構100近似360度發光。模製膠體160中也可以摻雜反光、螢光或顏料等可以改變發光狀態的粒子。
As shown in FIGS. 11 and 12, when power is supplied through the two
參閱圖13所示,在具體的配置上,可以在二金屬線200上焊接多個可側發光的發光二極體封裝結構100,同時讓模製膠體160互為反向突出,就可以達成完整的360度發光。
Referring to FIG. 13, in a specific configuration, a plurality of side-emitting light-emitting
本發明透過模製膠體160的厚度配置,使得模製膠體160明顯突出於絕緣基板130,從俯視圖或底視圖觀察,本發明中的模製膠體160相較於現有技術的發光二極體封裝中的模製膠體160大而突出,而提供較大的發光面積,有相對較好的發光效果。同時,本發明降低絕緣基板130在寬度方向Y上的寬度,有效地減少通過模製膠體160發出的光線被絕緣基板130遮擋,達成近似360度發光。
According to the present invention, through the thickness configuration of the molded
100:可側發光的發光二極體封裝結構 100: Side-emitting light-emitting diode package structure
110:第一貼片焊盤 110: The first patch pad
120:第二貼片焊盤 120: The second patch pad
130:絕緣基板 130: Insulating substrate
140:發光二極體晶片 140: LED chip
151:第一焊線 151: The first wire
152:第二焊線 152: The second wire
160:模製膠體 160: Molded colloid
200:金屬線 200: Metal wire
X:長度方向 X: length direction
Y:寬度方向 Y: width direction
Z:高度方向 Z: height direction
Claims (8)
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Citations (2)
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US20060208364A1 (en) * | 2005-03-19 | 2006-09-21 | Chien-Jen Wang | LED device with flip chip structure |
US20180012872A1 (en) * | 2016-07-06 | 2018-01-11 | Glo Ab | Molded led package with laminated leadframe and method of making thereof |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060208364A1 (en) * | 2005-03-19 | 2006-09-21 | Chien-Jen Wang | LED device with flip chip structure |
US20180012872A1 (en) * | 2016-07-06 | 2018-01-11 | Glo Ab | Molded led package with laminated leadframe and method of making thereof |
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