TWM607068U - Sideway-emission light-emitting diode package structure - Google Patents

Sideway-emission light-emitting diode package structure Download PDF

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TWM607068U
TWM607068U TW109209946U TW109209946U TWM607068U TW M607068 U TWM607068 U TW M607068U TW 109209946 U TW109209946 U TW 109209946U TW 109209946 U TW109209946 U TW 109209946U TW M607068 U TWM607068 U TW M607068U
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emitting diode
light
patch pad
pad
patch
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TW109209946U
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Chinese (zh)
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邵樹發
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英屬安圭拉商鴻盛國際有限公司
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Publication of TWM607068U publication Critical patent/TWM607068U/en

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一種可側發光的發光二極體封裝結構,包含絕緣基板、第一貼片焊盤、第二貼片焊盤、發光二極體晶片以及模製膠體。絕緣基板具有頂面、底面、第一側面以及第二側面,第一側面與第二側面相對配置,且面連接頂面以及底面。第一貼片焊盤包覆於第一側面,第二貼片焊盤包覆於第二側面;第一貼片焊盤以及第二貼片焊盤共同包覆頂面並保持第一間隙,第一貼片焊盤以及第二貼片焊盤共同包覆底面並保持第二間隙。發光二極體晶片設置於第一貼片焊盤,並且對應於頂面。發光二極體晶片的第一電極以及第二電極分別電性連接於第一貼片焊盤以及第二貼片焊盤。模製膠體對應於頂面設置,局部地覆蓋於第一貼片焊盤以及第二貼片焊盤,並且包覆發光二極體晶片以及填充第一間隙。定義通過頂面以及底面的高度方向,模製膠體於高度方向具有膠體厚度,且絕緣基板於高度方向具有基板厚度,膠體厚度大於基板厚度。A light-emitting diode package structure capable of side-emitting light includes an insulating substrate, a first patch pad, a second patch pad, a light-emitting diode chip, and a molded colloid. The insulating substrate has a top surface, a bottom surface, a first side surface, and a second side surface. The first side surface and the second side surface are disposed opposite to each other, and the surfaces are connected to the top surface and the bottom surface. The first patch pad is wrapped on the first side surface, and the second patch pad is wrapped on the second side surface; the first patch pad and the second patch pad together cover the top surface and maintain the first gap, The first patch pad and the second patch pad jointly cover the bottom surface and maintain a second gap. The light emitting diode chip is arranged on the first patch pad and corresponds to the top surface. The first electrode and the second electrode of the light emitting diode chip are respectively electrically connected to the first patch pad and the second patch pad. The molding compound is arranged corresponding to the top surface, partially covers the first patch pad and the second patch pad, and covers the light emitting diode chip and fills the first gap. Define the height direction passing through the top surface and the bottom surface, the molded gel has a gel thickness in the height direction, and the insulating substrate has a substrate thickness in the height direction, and the gel thickness is greater than the substrate thickness.

Description

可側發光的發光二極體封裝結構Side-emitting light-emitting diode packaging structure

本新型有關於光電元件,特别是關於一種可側發光的發光二極體封裝結構。The present invention relates to optoelectronic components, in particular to a light emitting diode package structure capable of side-emitting light.

發光二極體是一種固態的半導體光電元件,用以將電能轉化爲光能。發光二極體包含一個半導體晶片。晶片的負極連接在一個金屬支架上,晶片的正極連接電源,且整個晶片被環氧樹脂封裝。發光二極體晶片包含P型半導體以及N型半導體。當電流通過焊線作用於這個晶片的時候,晶片就會發光。發光二極體晶片需要受到保護,以免遭受灰塵、潮濕、靜電放電(ESD)和機械破壞。而施加電流時,在P-N內產生的熱量需要去除,以防發光二極體晶片過熱。先前技術不斷提出新材料以及新的封裝結構將發光二極體晶片產生的熱量傳導出來。A light emitting diode is a solid-state semiconductor optoelectronic element used to convert electrical energy into light energy. The light-emitting diode contains a semiconductor chip. The negative pole of the chip is connected to a metal bracket, the positive pole of the chip is connected to a power source, and the entire chip is encapsulated by epoxy resin. The light emitting diode chip includes P-type semiconductor and N-type semiconductor. When current is applied to the chip through the bonding wire, the chip will emit light. The LED chip needs to be protected from dust, humidity, electrostatic discharge (ESD) and mechanical damage. When current is applied, the heat generated in the P-N needs to be removed to prevent the light-emitting diode chip from overheating. The prior art continues to propose new materials and new packaging structures to conduct heat generated by the light-emitting diode chip.

圖1、圖2以及圖3所示為先前技術中的發光二極體封裝結構1。其中,圖1是前視圖,圖2是俯視圖,圖3是底視圖。如圖所示發光二極體封裝結構1包含印刷電路板2、發光二極體晶片3、第一焊線4、第二焊線5以及模製膠體6。印刷電路板2的頂面設置固晶墊2c以及焊線墊2d,印刷電路板2的底面設置二焊接墊2e。發光二極體晶片3設置於固晶墊2c,第一焊線4以及第二焊線5分別將發光二極體晶片3的二電極連接至固晶墊2c以及焊線墊2d。模製膠體6,例如環氧樹脂或矽膠,通過模制的方法,包覆發光二極體晶片3、第一焊線4以及第二焊線5,以保護發光二極體晶片3。Fig. 1, Fig. 2 and Fig. 3 show the light emitting diode package structure 1 in the prior art. Among them, Fig. 1 is a front view, Fig. 2 is a top view, and Fig. 3 is a bottom view. As shown in the figure, the light-emitting diode package structure 1 includes a printed circuit board 2, a light-emitting diode chip 3, a first bonding wire 4, a second bonding wire 5 and a molded glue 6. The top surface of the printed circuit board 2 is provided with a die bonding pad 2c and a wire bonding pad 2d, and the bottom surface of the printed circuit board 2 is provided with two bonding pads 2e. The LED chip 3 is disposed on the die bonding pad 2c, and the first bonding wire 4 and the second bonding wire 5 connect the two electrodes of the LED chip 3 to the bonding pad 2c and the bonding wire pad 2d, respectively. The molding compound 6, such as epoxy resin or silicon glue, covers the light-emitting diode chip 3, the first bonding wire 4 and the second bonding wire 5 by a molding method to protect the light-emitting diode chip 3.

如圖4、圖5以及圖6所示,是發光二極體封裝結構1實際焊接於二個金屬線200的情況。金屬線200可以是一般裸線,也可以是漆包線或膠包線外露的部分。金屬線200分別焊接到二焊接墊2e,透過第一焊線4、第二焊線5、固晶墊2c以及焊線墊2d的連接,提供電力到發光二極體晶片3,使得發光二極體晶片3發光。As shown in FIG. 4, FIG. 5, and FIG. 6, the light emitting diode package structure 1 is actually welded to two metal wires 200. The metal wire 200 may be a general bare wire, or an exposed part of an enameled wire or a rubber covered wire. The metal wires 200 are respectively soldered to the two bonding pads 2e. Through the connection of the first bonding wire 4, the second bonding wire 5, the die bonding pad 2c, and the bonding wire pad 2d, power is supplied to the light emitting diode chip 3, so that the light emitting diode The bulk wafer 3 emits light.

如圖5以及圖6所示,從俯視圖或底視圖觀察,發光二極體晶片3實際發光的時候,僅有單側(俯視圖所看到的一側)能夠看到發光二極體晶片3充分發光。另一側(底視圖所看到的一側),發光二極體晶片3以及模製膠體6都是被印刷電路板2遮擋,使得發光二極體封裝結構1只能做到接近180度的發光。As shown in Figures 5 and 6, when viewed from a top view or a bottom view, when the LED chip 3 actually emits light, only one side (the side seen in the top view) can see the LED chip 3 sufficiently Glow. On the other side (the side seen from the bottom view), the light-emitting diode chip 3 and the molded glue 6 are both blocked by the printed circuit board 2, so that the light-emitting diode package structure 1 can only be close to 180 degrees Glow.

基於上述技術問題,本新型提出一種可側發光的發光二極體封裝結構,用以解決先前技術中存在的缺陷。Based on the above technical problems, the present invention proposes a side-emitting light emitting diode package structure to solve the defects in the prior art.

本新型提出一種可側發光的發光二極體封裝結構,包含絕緣基板、一第一貼片焊盤、第二貼片焊盤、發光二極體晶片以及模製膠體。絕緣基板具有頂面、底面、第一側面以及第二側面,第一側面與第二側面相對配置,且第一側面與第二側面連接頂面以及底面。第一貼片焊盤包覆於第一側面;第二貼片焊盤包覆於第二側面;第一貼片焊盤以及第二貼片焊盤共同包覆頂面並保持第一間隙,第一貼片焊盤以及第二貼片焊盤共同包覆底面並保持第二間隙。發光二極體晶片設置於第一貼片焊盤,並且對應於頂面;其中,發光二極體晶片電性連接於第一貼片焊盤以及第二貼片焊盤。模製膠體對應於頂面設置,局部地覆蓋於第一貼片焊盤以及第二貼片焊盤,並且包覆發光二極體晶片以及填充第一間隙;定義通過頂面以及底面的一高度方向,模製膠體於高度方向具有一膠體厚度,且絕緣基板於高度方向具有一基板厚度,膠體厚度大於基板厚度。The present invention proposes a side-emitting light-emitting diode package structure, which includes an insulating substrate, a first patch pad, a second patch pad, a light-emitting diode chip, and a molded colloid. The insulating substrate has a top surface, a bottom surface, a first side surface, and a second side surface. The first side surface and the second side surface are disposed oppositely, and the first side surface and the second side surface are connected to the top surface and the bottom surface. The first patch pad is wrapped on the first side surface; the second patch pad is wrapped on the second side surface; the first patch pad and the second patch pad together cover the top surface and maintain the first gap, The first patch pad and the second patch pad jointly cover the bottom surface and maintain a second gap. The light emitting diode chip is arranged on the first patch pad and corresponds to the top surface; wherein the light emitting diode chip is electrically connected to the first patch pad and the second patch pad. The molding compound is set corresponding to the top surface, partially covers the first patch pad and the second patch pad, and covers the light-emitting diode chip and fills the first gap; defines a height passing through the top surface and the bottom surface In the direction, the molded gel has a gel thickness in the height direction, and the insulating substrate has a substrate thickness in the height direction, and the gel thickness is greater than the thickness of the substrate.

在至少一實施例中,膠體厚度至少是基板厚度的二倍。In at least one embodiment, the thickness of the colloid is at least twice the thickness of the substrate.

在至少一實施例中,定義通過第一側面以及第二側面並且垂直於高度方向的長度方向,並定義垂直於高度方向以及長度方向的寬度方向,絕緣基板於長度方向的基板長度,大於絕緣基板於寬度方向上的基板寬度。In at least one embodiment, the length direction passing through the first side surface and the second side surface and perpendicular to the height direction is defined, and the width direction perpendicular to the height direction and the length direction is defined. The length of the insulating substrate in the length direction is greater than that of the insulating substrate The width of the substrate in the width direction.

在至少一實施例中,基板長度至少是基板寬度的三倍。In at least one embodiment, the length of the substrate is at least three times the width of the substrate.

在至少一實施例中,於寬度方向上,模製膠體的一膠體寬度等於基板寬度。In at least one embodiment, in the width direction, a glue width of the molded glue is equal to the width of the substrate.

在至少一實施例中,於寬度方向上,第一貼片焊盤以及第二貼片焊盤的焊盤寬度等於基板寬度。In at least one embodiment, in the width direction, the pad widths of the first patch pad and the second patch pad are equal to the width of the substrate.

在至少一實施例中,可側發光的發光二極體封裝結構更包含第一焊線以及第二焊線,第一焊線連接於發光二極體晶片以及第一貼片焊盤,並且第二焊線連接於發光二極體晶片以及第二貼片焊盤。In at least one embodiment, the side-emitting light-emitting diode package structure further includes a first bonding wire and a second bonding wire, the first bonding wire is connected to the light-emitting diode chip and the first patch pad, and The two bonding wires are connected to the light-emitting diode chip and the second patch pad.

在至少一實施例中,可側發光的發光二極體封裝結構更包含二金屬線,平行於高度方向配置,第一貼片焊盤以及第二貼片焊盤對應頂面以及底面的部份,分別焊接到二金屬線。In at least one embodiment, the side-emitting light-emitting diode package structure further includes two metal wires, which are arranged parallel to the height direction. The first patch pad and the second patch pad correspond to parts of the top surface and the bottom surface. , Welded to two metal wires respectively.

在至少一實施例中,模製膠體位於二金屬線之間。In at least one embodiment, the molded gel is located between the two metal wires.

本新型透過模製膠體的厚度配置,使得模製膠體明顯突出於絕緣基板,從俯視圖或底視圖觀察,本新型中的模製膠體相較於現有技術的發光二極體封裝中的模製膠體大而突出,而提供較大的發光面積,有相對較好的發光效果。同時,本新型降低絕緣基板在寬度方向上的寬度,有效地減少通過模製膠體發出的光線被絕緣基板遮擋,達成360度發光。Through the thickness configuration of the molded gel, the molded gel clearly protrudes from the insulating substrate. Observed from a top view or a bottom view, the molded gel of the present invention is compared with the molded gel of the prior art light-emitting diode package. Large and prominent, while providing a larger light-emitting area, there is a relatively good light-emitting effect. At the same time, the present invention reduces the width of the insulating substrate in the width direction, effectively reducing the light emitted by the molded colloid from being blocked by the insulating substrate, and achieving 360-degree light emission.

參閱圖7、圖8以及圖9所示,為本新型實施例提出的一種可側發光的發光二極體封裝結構100,包含絕緣基板130、第一貼片焊盤110、第二貼片焊盤120、發光二極體晶片140、第一焊線151、第二焊線152以及模製膠體160。Referring to FIG. 7, FIG. 8, and FIG. 9, a side-emitting light-emitting diode package structure 100 proposed by the new embodiment includes an insulating substrate 130, a first patch pad 110, and a second patch bonding The disk 120, the light emitting diode chip 140, the first bonding wire 151, the second bonding wire 152 and the molded gel 160.

如圖7、圖8以及圖9所示,絕緣基板130用以提供電性絕緣。在一具體實施例中,絕緣基板130、第一貼片焊盤110以及第二貼片焊盤120的組合是印刷電路板。也就是說透過印刷電路板的製程,就可以直接製作出本新型所需要的絕緣基板130、第一貼片焊盤110以及第二貼片焊盤120。絕緣基板130部排除表面經過絕緣處理的金屬基板,或是絕緣的陶瓷基板,前述金屬基板或陶瓷基板可以提供良好的導熱散熱效果。As shown in FIGS. 7, 8, and 9, the insulating substrate 130 is used to provide electrical insulation. In a specific embodiment, the combination of the insulating substrate 130, the first patch pad 110, and the second patch pad 120 is a printed circuit board. That is to say, through the manufacturing process of the printed circuit board, the insulating substrate 130, the first patch pad 110 and the second patch pad 120 required by the present invention can be directly manufactured. The insulating substrate 130 excludes metal substrates whose surfaces have been insulated or insulated ceramic substrates. The aforementioned metal substrates or ceramic substrates can provide good heat conduction and heat dissipation effects.

如圖7所示,絕緣基板130具有頂面133、底面134、第一側面131以及第二側面132。第一側面131與第二側面132相對配置,且第一側面131與第二側面132連接頂面133以及底面134。As shown in FIG. 7, the insulating substrate 130 has a top surface 133, a bottom surface 134, a first side surface 131 and a second side surface 132. The first side surface 131 and the second side surface 132 are disposed oppositely, and the first side surface 131 and the second side surface 132 are connected to the top surface 133 and the bottom surface 134.

如圖7、圖8以及圖9所示,第一貼片焊盤110以及第二貼片焊盤120分別包覆於第一側面131以及第二側面132。同時,第一貼片焊盤110以及第二貼片焊盤120分別延伸至頂面133以及底面134。第一貼片焊盤110以及第二貼片焊盤120共同包覆頂面133並保持第一間隙G1,並且第一貼片焊盤110以及第二貼片焊盤120共同包覆底面134並保持第二間隙G2。As shown in FIGS. 7, 8, and 9, the first patch pad 110 and the second patch pad 120 are respectively covered on the first side surface 131 and the second side surface 132. At the same time, the first patch pad 110 and the second patch pad 120 extend to the top surface 133 and the bottom surface 134 respectively. The first patch pad 110 and the second patch pad 120 jointly cover the top surface 133 and maintain the first gap G1, and the first patch pad 110 and the second patch pad 120 jointly cover the bottom surface 134 and Maintain the second gap G2.

如圖7、圖8以及圖9所示,第一貼片焊盤110上有一固晶位置,且對應於頂面133。發光二極體晶片140設置於固晶位置,亦即發光二極體晶片140設置於第一貼片焊盤110,並且對應於頂面133。發光二極體晶片140具有第一電極141以及第二電極142,分別電性連接於第一貼片焊盤110以及第二貼片焊盤120,藉以透過第一焊線151以及第二焊線152將發光二極體晶片140電性連接至第一貼片焊盤110以及第二貼片焊盤120。As shown in FIG. 7, FIG. 8 and FIG. 9, there is a die bonding position on the first patch pad 110 and corresponds to the top surface 133. The light emitting diode chip 140 is disposed at the die bonding position, that is, the light emitting diode chip 140 is disposed on the first patch pad 110 and corresponds to the top surface 133. The light emitting diode chip 140 has a first electrode 141 and a second electrode 142, which are electrically connected to the first patch pad 110 and the second patch pad 120, respectively, so as to pass through the first bonding wire 151 and the second bonding wire 152 electrically connects the light emitting diode chip 140 to the first patch pad 110 and the second patch pad 120.

如圖7以及圖8所示,在本新型實施例中,可側發光的發光二極體封裝結構100更包含第一焊線151以及第二焊線152,第一焊線151連接於第一電極141以及第一貼片焊盤110,並且第二焊線152連接於第二電極142以及第二貼片焊盤120。As shown in FIGS. 7 and 8, in the embodiment of the present invention, the side-emitting light-emitting diode package structure 100 further includes a first bonding wire 151 and a second bonding wire 152, and the first bonding wire 151 is connected to the first The electrode 141 and the first patch pad 110, and the second bonding wire 152 is connected to the second electrode 142 and the second patch pad 120.

如圖7以及圖8所示,模製膠體160對應於頂面133設置,局部地覆蓋於第一貼片焊盤110以及第二貼片焊盤120,使得第一貼片焊盤110以及第二貼片焊盤120對應於第一側面131以及第二側面132的部份外露。模製膠體160包覆發光二極體晶片140、第一焊線151、第二焊線152,以及填充第一間隙G1。As shown in FIGS. 7 and 8, the molding compound 160 is provided corresponding to the top surface 133, and partially covers the first patch pad 110 and the second patch pad 120, so that the first patch pad 110 and the second patch pad The two patch pads 120 corresponding to the first side surface 131 and the second side surface 132 are exposed. The molding compound 160 covers the light emitting diode chip 140, the first bonding wire 151, and the second bonding wire 152, and fills the first gap G1.

如圖7、圖8以及圖9所示,定義通過頂面133以及底面134的一高度方向Z,模製膠體160於高度方向Z具有一膠體厚度Gth,且絕緣基板130於高度方向Z具有一基板厚度Sth,膠體厚度Gth大於基板厚度Sth。膠體厚度Gth至少是基板厚度Sth的二倍。定義通過第一側面131以及第二側面132並且垂直於高度方向Z的長度方向X,並定義垂直於高度方向Z以及長度方向X的寬度方向Y,絕緣基板130於長度方向X的基板長度SL,大於絕緣基板130於寬度方向Y上的基板寬度SW。基板長度SL至少是基板寬度SW的三倍。此外,於寬度方向Y上,模製膠體160的一膠體寬度GW等於基板寬度SW。於寬度方向Y上,第一貼片焊盤110以及第二貼片焊盤120的焊盤寬度等於基板寬度SW,也就是在寬度方向Y上,第一貼片焊盤110以及第二貼片焊盤120完全覆蓋頂面133,並且在長度方向X上共同覆蓋頂面133並保持第一間隙G1。As shown in FIGS. 7, 8 and 9, a height direction Z passing through the top surface 133 and the bottom surface 134 is defined, the molded gel 160 has a gel thickness Gth in the height direction Z, and the insulating substrate 130 has a height direction Z The substrate thickness Sth, the gel thickness Gth is greater than the substrate thickness Sth. The gel thickness Gth is at least twice the substrate thickness Sth. Define the length direction X passing through the first side surface 131 and the second side surface 132 and perpendicular to the height direction Z, and define the width direction Y perpendicular to the height direction Z and the length direction X, the substrate length SL of the insulating substrate 130 in the length direction X, It is greater than the substrate width SW of the insulating substrate 130 in the width direction Y. The substrate length SL is at least three times the substrate width SW. In addition, in the width direction Y, a gel width GW of the molded gel 160 is equal to the substrate width SW. In the width direction Y, the pad widths of the first patch pad 110 and the second patch pad 120 are equal to the substrate width SW, that is, in the width direction Y, the first patch pad 110 and the second patch pad The pad 120 completely covers the top surface 133, and collectively covers the top surface 133 in the length direction X and maintains the first gap G1.

參閱圖10、圖11以及圖12所示,可側發光的發光二極體封裝結構100更包含二金屬線200。金屬線200可以是一般裸線,也可以是漆包線或膠包線外露的部分。二金屬線200平行於高度方向Z配置。第一貼片焊盤110以及第二貼片焊盤120對應頂面133以及底面134的部份,分別焊接到二金屬線200。可側發光的發光二極體封裝結構100是以側向焊接於二金屬線200,金屬線200可以在頂面133以及底面134的邊緣接觸第一貼片焊盤110以及第二貼片焊盤120,並且透過焊料充分電性連接於第一貼片焊盤110以及第二貼片焊盤120。模製膠體160位於二金屬線200之間。Referring to FIG. 10, FIG. 11 and FIG. 12, the side-emitting light-emitting diode package structure 100 further includes two metal wires 200. The metal wire 200 may be a general bare wire, or an exposed part of an enameled wire or a rubber covered wire. The two metal wires 200 are arranged parallel to the height direction Z. The parts of the first patch pad 110 and the second patch pad 120 corresponding to the top surface 133 and the bottom surface 134 are respectively soldered to the two metal wires 200. The side-emitting light-emitting diode package structure 100 is laterally welded to two metal wires 200, and the metal wires 200 can contact the first patch pad 110 and the second patch pad on the edges of the top surface 133 and the bottom surface 134 120, and fully electrically connected to the first patch pad 110 and the second patch pad 120 through solder. The molding gel 160 is located between the two metal wires 200.

透過第一焊線151、第二焊線152、第一貼片焊盤110以及第二貼片焊盤120的連接,金屬線200提供電力到發光二極體晶片140,使得發光二極體晶片140發光。金屬線200通常為銅線,但不排除其他具有高導電特性的金屬。透過多個可側發光的發光二極體封裝結構100依序焊接於二金屬線200,就可以形成可多方向發光的燈串。Through the connection of the first bonding wire 151, the second bonding wire 152, the first patch pad 110 and the second patch pad 120, the metal wire 200 provides power to the light emitting diode chip 140, so that the light emitting diode chip 140 shines. The metal wire 200 is usually a copper wire, but other metals with high conductivity are not excluded. Through a plurality of side-emitting light-emitting diode package structures 100 sequentially welded to the two metal wires 200, a light string capable of emitting light in multiple directions can be formed.

如圖11以及圖12所示,當透過二金屬線200提供電力而對第一電極141以及第二電極142施以電壓差時,發光二極體晶片140發出光線。此時,不論從俯視圖或底視圖觀察可側發光的發光二極體封裝結構100,發光二極體晶片140時朝向側向發光(朝向高度方向Z發光)。同時模製膠體160也是朝向側向突出(朝向高度方向Z突出),而可使得模製膠體160導光效果,在長度方向X或寬度方向Y上不會受到遮蔽,而在長度方向X以及寬度方向Y有良好的發光效果,朝向高度方向Z突出的模製膠體160,也可以減少光線被絕緣基板130遮蔽的程度,而使得可側發光的發光二極體封裝結構100近似360度發光。模製膠體160中也可以摻雜反光、螢光或顏料等可以改變發光狀態的粒子。As shown in FIG. 11 and FIG. 12, when power is supplied through the two metal wires 200 and a voltage difference is applied to the first electrode 141 and the second electrode 142, the light emitting diode chip 140 emits light. At this time, whether the side-emitting light-emitting diode package structure 100 is viewed from a top view or a bottom view, the light-emitting diode chip 140 emits light toward the side direction (light emitting toward the height direction Z). At the same time, the molded colloid 160 also protrudes toward the side (protruding toward the height direction Z), which can make the molded colloid 160 have a light guide effect without being shielded in the length direction X or the width direction Y, but in the length direction X and the width direction. The direction Y has a good light-emitting effect. The molded gel 160 protruding toward the height direction Z can also reduce the degree of light shielding by the insulating substrate 130, so that the side-emitting light-emitting diode package structure 100 emits approximately 360 degrees. The molded colloid 160 can also be doped with particles that can change the light-emitting state, such as reflective, fluorescent, or pigment.

參閱圖13所示,在具體的配置上,可以在二金屬線200上焊接多個可側發光的發光二極體封裝結構100,同時讓模製膠體160互為反向突出,就可以達成完整的360度發光。Referring to FIG. 13, in a specific configuration, a plurality of side-emitting light-emitting diode package structures 100 can be welded on the two metal wires 200, and the molded colloids 160 can protrude in opposite directions from each other to achieve completeness. 360-degree glow.

本新型透過模製膠體160的厚度配置,使得模製膠體160明顯突出於絕緣基板130,從俯視圖或底視圖觀察,本新型中的模製膠體160相較於現有技術的發光二極體封裝中的模製膠體160大而突出,而提供較大的發光面積,有相對較好的發光效果。同時,本新型降低絕緣基板130在寬度方向Y上的寬度,有效地減少通過模製膠體160發出的光線被絕緣基板130遮擋,達成近似360度發光。Through the thickness configuration of the molded gel 160 of the present invention, the molded gel 160 clearly protrudes from the insulating substrate 130. When viewed from a top view or a bottom view, the molded gel 160 of the present invention is compared with the prior art light emitting diode package The molded colloid 160 is large and prominent, and provides a larger light-emitting area and has a relatively good light-emitting effect. At the same time, the present invention reduces the width of the insulating substrate 130 in the width direction Y, effectively reducing the light emitted by the molded colloid 160 from being blocked by the insulating substrate 130, and achieving approximately 360-degree light emission.

1:發光二極體封裝結構 2:印刷電路板 2c:固晶墊 2d:焊線墊 2e:焊接墊 3:發光二極體晶片 4:第一焊線 5:第二焊線 6:模製膠體 100:可側發光的發光二極體封裝結構 110:第一貼片焊盤 120:第二貼片焊盤 130:絕緣基板 131:第一側面 132:第二側面 133:頂面 134:底面 140:發光二極體晶片 141:第一電極 142:第二電極 151:第一焊線 152:第二焊線 160:模製膠體 200:金屬線 G1:第一間隙 G2:第二間隙 Gth:膠體厚度 Sth:基板厚度 SL:基板長度 SW:基板寬度 GW:膠體寬度 X:長度方向 Y:寬度方向 Z:高度方向1: LED package structure 2: printed circuit board 2c: Bonding pad 2d: wire bonding pad 2e: soldering pad 3: LED chip 4: The first wire 5: The second wire 6: Molded colloid 100: Side-emitting light-emitting diode package structure 110: The first patch pad 120: The second patch pad 130: insulating substrate 131: First side 132: second side 133: top surface 134: Bottom 140: LED chip 141: first electrode 142: second electrode 151: The first wire 152: The second wire 160: Molded colloid 200: Metal wire G1: first gap G2: second gap Gth: Gel thickness Sth: substrate thickness SL: substrate length SW: substrate width GW: Gel width X: length direction Y: width direction Z: height direction

圖1是先前技術中,發光二極體封裝結構的前視圖。 圖2是先前技術中,發光二極體封裝結構的俯視圖。 圖3是先前技術中,發光二極體封裝結構的底視圖。 圖4是先前技術中,發光二極體封裝結構焊接於金屬線的前視圖。 圖5是先前技術中,發光二極體封裝結構焊接於金屬線的俯視圖。 圖6是先前技術中,發光二極體封裝結構焊接於金屬線的底視圖。 圖7是本新型實施例中,發光二極體封裝結構的前視剖面示意圖。 圖8是本新型實施例中,發光二極體封裝結構的俯視圖。 圖9是本新型實施例中,發光二極體封裝結構的底視圖。 圖10是本新型實施例中,發光二極體封裝結構焊接於金屬線的底視圖。 圖11是本新型實施例中,發光二極體封裝結構焊接於金屬線的前視剖面示意圖。 圖12是本新型實施例中,發光二極體封裝結構焊接於金屬線的後視剖面示意圖。 圖13是本新型實施例中,發光二極體封裝結構焊接於金屬線的前視剖面示意圖。 Fig. 1 is a front view of a light emitting diode package structure in the prior art. FIG. 2 is a top view of a light emitting diode package structure in the prior art. Fig. 3 is a bottom view of a light emitting diode package structure in the prior art. FIG. 4 is a front view of a light emitting diode package structure welded to a metal wire in the prior art. FIG. 5 is a top view of the LED package structure welded to the metal wire in the prior art. FIG. 6 is a bottom view of a light emitting diode package structure welded to a metal wire in the prior art. Fig. 7 is a schematic front cross-sectional view of a light emitting diode package structure in an embodiment of the present invention. Fig. 8 is a top view of a light emitting diode package structure in an embodiment of the present invention. Fig. 9 is a bottom view of the light emitting diode package structure in the embodiment of the present invention. FIG. 10 is a bottom view of the light emitting diode package structure welded to the metal wire in the embodiment of the present invention. FIG. 11 is a front cross-sectional schematic diagram of the light emitting diode package structure welded to the metal wire in the embodiment of the present invention. FIG. 12 is a schematic rear view cross-sectional view of the light emitting diode package structure welded to the metal wire in the embodiment of the present invention. FIG. 13 is a front cross-sectional schematic diagram of the light emitting diode package structure welded to the metal wire in the embodiment of the present invention.

100:可側發光的發光二極體封裝結構 100: Side-emitting light-emitting diode package structure

110:第一貼片焊盤 110: The first patch pad

120:第二貼片焊盤 120: The second patch pad

130:絕緣基板 130: insulating substrate

140:發光二極體晶片 140: LED chip

151:第一焊線 151: The first wire

152:第二焊線 152: The second wire

160:模製膠體 160: Molded colloid

200:金屬線 200: Metal wire

X:長度方向 X: length direction

Y:寬度方向 Y: width direction

Z:高度方向 Z: height direction

Claims (9)

一種可側發光的發光二極體封裝結構,包含: 一絕緣基板,具有一頂面、一底面、一第一側面以及一第二側面,該第一側面與該第二側面相對配置,且該第一側面與該第二側面連接該頂面以及該底面; 一第一貼片焊盤,包覆於該第一側面; 一第二貼片焊盤,包覆於該第二側面;該第一貼片焊盤以及該第二貼片焊盤共同包覆該頂面並保持一第一間隙,該第一貼片焊盤以及該第二貼片焊盤共同包覆該底面並保持一第二間隙; 一發光二極體晶片,設置於該第一貼片焊盤,並且對應於該頂面;其中,該發光二極體晶片電性連接於該第一貼片焊盤以及該第二貼片焊盤;以及 一模製膠體,對應於該頂面設置,局部地覆蓋於該第一貼片焊盤以及該第二貼片焊盤,並且包覆該發光二極體晶片以及填充該第一間隙;定義通過該頂面以及該底面的一高度方向,該模製膠體於該高度方向具有一膠體厚度,且該絕緣基板於該高度方向具有一基板厚度,該膠體厚度大於該基板厚度。 A side-emitting light-emitting diode package structure, including: An insulating substrate has a top surface, a bottom surface, a first side surface, and a second side surface. The first side surface and the second side surface are disposed opposite to each other, and the first side surface and the second side surface are connected to the top surface and the second side surface. Underside A first patch pad covering the first side surface; A second patch pad covering the second side surface; the first patch pad and the second patch pad jointly covering the top surface and maintaining a first gap, the first patch soldering The disk and the second patch pad jointly cover the bottom surface and maintain a second gap; A light-emitting diode chip is disposed on the first patch pad and corresponds to the top surface; wherein, the light-emitting diode chip is electrically connected to the first patch pad and the second patch bond Plate; and A molded plastic body corresponding to the top surface, partially covering the first patch pad and the second patch pad, and covering the light-emitting diode chip and filling the first gap; the definition passes In a height direction of the top surface and the bottom surface, the molded gel has a gel thickness in the height direction, and the insulating substrate has a substrate thickness in the height direction, and the gel thickness is greater than the thickness of the substrate. 如請求項1所述的可側發光的發光二極體封裝結構,其中,該膠體厚度至少是該基板厚度的二倍。The side-emitting light-emitting diode package structure according to claim 1, wherein the thickness of the gel is at least twice the thickness of the substrate. 如請求項1所述的可側發光的發光二極體封裝結構,其中,定義通過該第一側面以及該第二側面並且垂直於該高度方向的一長度方向,並定義垂直於該高度方向以及該長度方向的一寬度方向,該絕緣基板於該長度方向的一基板長度,大於該絕緣基板於該寬度方向上的一基板寬度。The side-emitting light-emitting diode package structure according to claim 1, wherein a length direction passing through the first side surface and the second side surface and perpendicular to the height direction is defined, and a length direction perpendicular to the height direction and A width direction of the length direction, a substrate length of the insulating substrate in the length direction is greater than a substrate width of the insulating substrate in the width direction. 如請求項3所述的可側發光的發光二極體封裝結構,其中,該基板長度至少是該基板寬度的三倍。The light emitting diode package structure capable of side-emitting light according to claim 3, wherein the length of the substrate is at least three times the width of the substrate. 如請求項3所述的可側發光的發光二極體封裝結構,其中,於該寬度方向上,該模製膠體的一膠體寬度等於該基板寬度。The side-emitting light-emitting diode package structure according to claim 3, wherein, in the width direction, a gel width of the molded gel is equal to the width of the substrate. 如請求項3所述的可側發光的發光二極體封裝結構,其中,於該寬度方向上,該第一貼片焊盤以及該第二貼片焊盤的焊盤寬度等於該基板寬度。The side-emitting light-emitting diode package structure according to claim 3, wherein, in the width direction, the pad width of the first patch pad and the second patch pad is equal to the width of the substrate. 如請求項3所述的可側發光的發光二極體封裝結構,更包含一第一焊線以及一第二焊線,該第一焊線連接於該發光二極體晶片以及該第一貼片焊盤,並且該第二焊線連接於該發光二極體晶片以及該第二貼片焊盤。The side-emitting light-emitting diode package structure according to claim 3, further comprising a first bonding wire and a second bonding wire, and the first bonding wire is connected to the light-emitting diode chip and the first sticker A chip pad, and the second bonding wire is connected to the light-emitting diode chip and the second patch pad. 如請求項3所述的可側發光的發光二極體封裝結構,更包含二金屬線,平行於該高度方向配置,該第一貼片焊盤以及該第二貼片焊盤對應該頂面以及該底面的部份,分別焊接到該二金屬線。The side-emitting light-emitting diode package structure according to claim 3, further comprising two metal wires, which are arranged parallel to the height direction, and the first patch pad and the second patch pad correspond to the top surface And the part of the bottom surface is respectively welded to the two metal wires. 如請求項8所述的可側發光的發光二極體封裝結構,其中,該模製膠體位於該二金屬線之間。The side-emitting light-emitting diode package structure according to claim 8, wherein the molded gel is located between the two metal wires.
TW109209946U 2020-07-31 2020-07-31 Sideway-emission light-emitting diode package structure TWM607068U (en)

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