TW202147544A - 具有用於電源線之連接凸片的模組 - Google Patents

具有用於電源線之連接凸片的模組 Download PDF

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TW202147544A
TW202147544A TW110120634A TW110120634A TW202147544A TW 202147544 A TW202147544 A TW 202147544A TW 110120634 A TW110120634 A TW 110120634A TW 110120634 A TW110120634 A TW 110120634A TW 202147544 A TW202147544 A TW 202147544A
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Taiwan
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carrier
module
connecting member
electrically insulating
area
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TW110120634A
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English (en)
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阿爾福列德 提姆
哈囉德 庫雷斯
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德商製陶技術股份有限公司
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Publication of TW202147544A publication Critical patent/TW202147544A/zh

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Geometry (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

本發明係關於一種模組（1），其中大於1,000 V之電壓及大於100 A之電流係經由電源線來施加，該模組具有：一電絕緣載體（2）；一連接構件（3），其具有大於0.3 mm之一材料厚度且經由一金屬化區域（4）以連接至該載體（2），該金屬化區域係藉由一第一端部（23）及一第二端部（24）來定界；電子組件（19，20），其視需要連接至該連接構件（3）；及冷卻構件（14）。 為了經由該連接構件（3）將功率自外部直接供應至該模組且因此省去先前技術中慣用之接合製程並避免電源供應器上之寄生電感，本發明提議，該連接構件（3）至少在一個位點處突出超出該金屬化區域（4）之一個端部(23，24），在此區域（9）中不固定至該載體（2）且具有接觸構件（22）。

Description

具有用於電源線之連接凸片的模組
本發明係關於功率電子裝置領域中之一種模組，其可控制大於1,000 V之電壓及大於100 A之電流。該模組至少包含 -電絕緣載體，其具有經由金屬化區域以連接至載體之至少一個連接構件，其中該連接構件較佳地由銅形成且具有大於0.3 mm之材料厚度， -電子組件，其經配置於該載體上且電連接至該連接構件以便控制經供應之功率，及 -冷卻元件，其適合於散熱。
具有絕緣閘電極之雙極電晶體（bipolar transistor with an insulated gate electrode；IGBT）為已知的，其在功率電子裝置中用作半導體組件。大於1,000 V之電壓及大於100 A之電流係經由電源線而施加至此等IGBT模組。
先前技術中已知之模組包含板狀基板，例如燒結陶瓷，其具有前側及後側。金屬冷卻器位於後側上以冷卻該模組。在該基板之前側上提供由材料厚度在0.3 mm與1.0 mm之間的銅組成之金屬化區域。在銅與模組外部之電流及電壓供應器之間的連接係藉助於所謂的接合線來進行。需要大量接合線，以便確保高電壓及電流可經傳導至模組中。此等接合線部分地經配置成彼此相距小距離且具有曲率，以便補償溫度波動。因而，可形成所謂的寄生電感。用於將金屬化區域連接至基板之已知方法為DCB（直接銅接合）或AMB（活性金屬硬焊）。
DCB方法為連接技術，其中銅可在自1060℃至1065℃之高溫範圍中連接至陶瓷基板。出於此目的，銅經加熱至接近其熔點1085℃。銅達至軟化溫度範圍，其影響銅在此製程步驟中之屬性及尺寸穩定性。在DCB方法中，可在陶瓷與銅之間產生空腔，所謂的氣孔。此等空腔對熱傳遞具有不利影響，且促進局部排放，自安全視角來看，此可能具有風險。DCB方法係用於大小為7.5"×5.5"之所謂的母板之金屬化。母板可包含具有較小尺寸之複數個基板，該等基板係根據其應用而分開。複合物可藉由DCB方法由銅及陶瓷來產生。取決於所使用陶瓷，此等複合物適合於100至1,000次負載變化。
AMB方法應理解為意謂「活性金屬硬焊」，亦即活性硬焊接，例如金屬至陶瓷之連接。在此狀況下，在真空或惰性氣體氛圍中，銅係藉助於金屬焊錫合金以連接至陶瓷，例如AlSiC。歸因於製程條件、真空或惰性氣體氛圍，AMB方法為成本密集型製程。儘管如此，此方法已在經冷卻功率模組之工業生產中確立了自己的地位，此係由於取決於所使用材料，生產了適合於高達5,000次負載變化之複合物。
本發明之目標為以一定方式改善功率電子裝置中之模組之效能，使得在大量負載變化之情況下，以緊湊形式長期確保無干擾的電子功能性。
根據本發明，此目標係藉由具有技術方案1之特徵之模組來實現。
根據本發明之模組具有載體，較佳地為陶瓷載體，該載體上之連接構件經配置於第一平坦側面上。此連接構件較佳地由銅製成，且表示至外部電流或電壓源之連接。該連接構件可呈線軌或匯流條形式且經由金屬化區域連接至載體。根據本發明，該連接構件延伸超出金屬化區域及/或載體之幾何尺寸，使得其突出超出金屬化區域及/或載體。換言之，該連接構件至少在一個位點處在橫向方向上突出超出載體及/或金屬化區域。位點可理解為意謂位置及/或區域，例如側表面及/或側表面之局部區域及/或圓周之區段/區域。若載體及/或金屬化區域具有例如尺寸為L × W × H之長方體形狀，則根據本發明，該連接構件之區域或區段經配置在此長方體外部。此意謂該連接構件之第一端部經配置在載體及/或金屬化區域外部，而該連接構件之第二端部經配置於載體之第一平坦側面及/或金屬化區域的區域中。
該連接構件藉助於金屬化以接合至載體。為了確保在載體與連接構件之間的牢固連接，出乎意料地發現，若連接構件僅在局部區域中藉助於金屬化連接至載體，則為足夠的。為了可靠功能性，若連接構件之約66%的基底區域藉助於金屬化以連接至載體，則為足夠的。此意謂連接構件之約33%的基底區域經配置在載體、功率模組或金屬化區域外部，且相對於載體及/或金屬化區域形成突出部（overhang）。換言之，若連接構件呈具有L × W × H之長方體之形式，則當由L × W產生之連接構件之66%的基底區域連接至載體時，會確保在連接構件與載體之間的牢固連接。合適的連接製程為AMB。在突出部之區域中，連接構件可擱置於載體上且在熱膨脹期間在其上滑動。
在其第一端部處，連接構件具有電流源或電壓源可連接至的至少一個接觸元件。該接觸元件可形成為連接構件之延伸部且接著經配置於與連接構件相同的平面中。用於緊固電源線之焊接或熔接製程遠離載體而以熱方式實行。如此降低，且理想地完全防止，電源供應器緊固製程對模組之影響。
在一替代性具體實例中，接觸元件可形成為與連接構件成一角度。接觸元件及連接構件接著具有例如L形狀。取決於電流及電壓供應器之連接構件，其他形狀（例如，U形狀、T形狀等）係可能的。
呈擴展構件形式之熱釋放區可設置於連接構件之第一端部與第二端部之間。至少一個擴展構件可經配置於載體及/或金屬化區域外部，較佳地直接鄰近於該載體及/或該金屬化區域。該擴展構件補償在連接構件與諸如晶片之電子組件下方的載體及/或經加熱金屬化物之間的熱膨脹差異。因而，較佳地完全防止由於熱發展而出現之功率模組上之機械負載。
擴展構件可為連接構件之整體部分，且可設計成例如呈彎曲或傾斜區段、卷邊、圓形物、彎曲物等形式。擴展構件之橫截面可等於或小於連接構件之橫截面。
在特定具體實例中，擴展構件可具有小於連接構件之橫截面的橫截面。此增加擴展構件之可撓性。擴展構件亦可具有一或多個切口。該切口可呈具有底部之開口形式或呈通孔形式。若擴展構件包含成列配置之複數個通孔，則其經設計呈穿孔形式。
切口或開口之形狀可視需要形成為例如圓形或正方形或矩形或此等形狀之組合。連接構件在連接至載體之前可包括擴展構件。
不管擴展構件之形狀如何，其可在連接構件之整個寬度上方或替代地僅在連接構件之寬度之局部區域上方延伸。擴展構件之設計適於功率饋送期間之熱發展。根據本發明，如此設計補償連接構件之擴展且因此增加模組之使用壽命。
連接構件至少在一個位點處橫向地或以一角度延伸超出金屬化區域、在此區域中不固定在載體上且具有用於電源線之接觸元件的事實將外部電源供應器至模組之連接簡化。不再需要且省去操作複雜的接合製程。另外，如此避免電源供應器上之寄生電感。根據本發明之將功率饋送直接連接至模組中之可能性的另一優點為所得總高度縮減。省去先前技術中所需之彎曲接合線（bonding wire）。因此，高效能電路之總高度縮減接合線超出電子組件之尺寸。功率電子裝置中之小型化，亦即較低總高度，為功率電子裝置中之組件開發中的持續挑戰。
在根據本發明之一個具體實例中，連接構件在至少一個位點處橫向地或以一角度在金屬化區域上方突出，且具有不在載體上方突出之接觸元件。此意謂，在此具體實例中，連接構件位於載體之區域中，但在局部區域中不固定（例如接合）至該載體。然而，該連接構件可擱置於該載體上，且在熱膨脹期間可在載體上滑動。此特定具體實例適合於其中僅極少空間可用於鄰近載體的側面之應用。
在一替代性具體實例中，連接構件可從對連接構件定界之所有側面突出在金屬化區域上方，亦即在整個圓周上方突出，且儘管如此，仍可配置於載體之尺寸內。
術語「電子組件」包含所有主動及被動電氣或電子結構元件或結構部件及/或結構元件或結構部件之部分，諸如導電軌、接合線、電壓源、開關、電阻器、電容器、線圈、二極體、致動器、感測器、積體電路（integrated circuit；IC）、晶片、SiC晶片、電晶體等。電子組件之此清單應明確說明到，在此文件之上下文中，所有可用的電氣或電子結構部件應被視為電子組件。該清單不要求完整性。
電子組件具有呈金屬化區域形式之接觸點，藉助於接觸點以連接至例如連接構件及/或另一電氣組件係可能的，如上文所界定。此等接觸點為電子組件之部分，為金屬導電的，且實現電子組件在電路中之功能安裝。在一較佳具體實例中，接觸點，亦即金屬化區域，可經設計為Ag、Au、Sn及/或SAC焊料之塗層。以此方式，有可能確保至電路之另一組件的接合導電連接。
連接構件較佳地由銅組成。在一個具體實例中，至少一個導電塗層，亦即接觸點或金屬化區域，經施加至連接構件。金屬化區域，亦即接觸點，為連接構件之組成部分，且接合至該連接構件。該塗層較佳地選自Ag、Au、Sn及/或SAC焊料。
在一較佳具體實例中，連接構件係由純度≥ 99%、較佳地≥ 99.9%且尤其較佳地≥ 99.99%，之銅製成。在一尤其較佳之具體實例中，具有低氧含量或低磷含量之銅用於連接構件。
根據本發明，至少一個電子組件直接應用於連接構件，亦即，此電子組件之接觸點直接與連接構件之接觸點經接合電連接。在此狀況下，在電子組件連接至電子組件之接觸點之塗層的金屬及/或材料期間，塗層（亦即連接構件之接觸點）之金屬及/或材料進行反應。此產生經接合機械及/或電氣連接。在此等電子組件與連接構件之間不存在接合構件，諸如接合線。在此上下文中，「直接連接」意謂兩個部分（例如電子組件及連接構件）經配置成當其經操作性地連接時彼此直接觸碰。電氣連接不需要額外構件。由於不存在額外構件，因此不僅可省去此等構件且另外可省去製程，諸如連接此等構件所必需之焊接、熔接等。額外構件及製程之不存在縮減在導致功率損耗之兩個組件之間的轉換，例如電感。提高此配置之效率及使用壽命，且降低製造成本及產品成本。
藉由在連接構件與電子組件之間的直接連接，電路之此等部分可經配置於平面中，個別部分相對於彼此之垂直位移得以避免或最小化。電氣組件相對於連接構件之位移及其經由接合線或其他有線連接進行之電氣連接時常導致電子信號中斷，如此產生功率損耗且因此應被避免。根據本發明之配置得避免此等缺點。
為了防止外部影響，除了接觸構件通向外部之，根據本發明之模組可用不導電化合物（例如聚矽氧化合物，如先前技術中已知)來囊封。
根據模組之應用而選擇本身已知的緊固方法。舉例而言，外部電源經由諸如焊接、夾持、壓接、旋擰之緊固而電連接至接觸元件。亦可使用凸片連接。
電絕緣載體較佳地為燒結陶瓷。氧化鋁或氮化鋁陶瓷極適合生產具有長使用壽命之高品質功率模組。該等陶瓷之特徵在於其極佳熱傳導性結合電絕緣屬性。
該載體較佳地具有用以使模組冷卻之冷卻構件。該等冷卻構件可例如以用於空氣冷卻之鰭片形式經配置於載體之第二平坦側面上。為了最佳化鰭片至載體之熱耦合，該等鰭片較佳為一體地連接至該載體。換言之，冷卻構件及載體形成一個部分且在一起被生產。在冷卻構件與載體之間不存在邊界線。
該載體亦可具有呈通道形式之至少一個空腔。此通道接著形成流體（氣體、水、空氣等）流動通過之冷卻構件，藉此可使模組冷卻。該通道接著為流體冷卻構件或流體冷卻模組。
連接構件較佳地經由AMB製程以連接至陶瓷載體。AMB製程尤其使得有可能將陶瓷載體連接至具有大於0.3 mm之材料厚度及/或釋放區之連接構件，該連接構件自金屬化區域及/或載體突出或伸出。在此狀況下，在真空或惰性氣體氛圍中，銅係藉助於金屬焊錫合金（亦即活性焊料）連接至陶瓷，例如AlSiC。在AMB方法中，較佳考慮使用經印刷為在20 µm至40 µm之間的焊錫膏，且因此表面可經均勻地潤濕。已發現，若謹慎地使用AMB方法，則不會在陶瓷與連接構件之間形成氣孔或空腔。因而，在陶瓷與連接構件之間產生牢固且可靠的連接。在連接構件與陶瓷之間的無空腔連接有助於熱傳遞且因此有助於藉助冷卻構件之熱耗散。此極大地改善冷卻效能。
電子組件（例如模組內之Si/SiC晶片）至連接構件之連接可藉助於所謂的「帶式接合」來進行。
用於生產根據本發明之模組的根據本發明之方法係藉由方法技術方案13之特徵來描述。該方法係關於大於1,000 V之電壓及大於100 A之電流經由電源線施加至的模組。電絕緣載體經由金屬化區域以連接至具有大於0.3 mm之材料厚度之連接構件。因為連接構件至少在一個位點處橫向地或以一角度至少延伸超出金屬化區域及/或載體，且具有至少一個接觸元件，所以自外部至模組之功率供應不再需要接合製程。此避免寄生電感。另外，高效能電路之總高度可縮減或減小。不再需要接合線超出電子組件之弓形延伸部。連接構件藉助於接觸元件以連接至電源供應器。
燒結陶瓷較佳地用作電絕緣載體，且連接構件使用AMB製程以固定在載體之金屬化區域上。已經在根據本發明之高效能電路模組之描述中詳細地描述AMB方法之優點。
本發明係關於電子高效能模組或其中多個模組，其中大於1,000 V之電壓及大於100 A之電流經由電源線來施加，該模組具有電絕緣載體，材料厚度大於0.3 mm之連接構件經由金屬化區域以固定在該電絕緣載體上，且視需要電連接至連接構件之電子組件經配置在該電絕緣載體上。
為了將功率自外部直接供應至模組及連接構件且因此省去先前技術中慣用之接合製程並避免電源供應器上之寄生電感，本發明提議，連接構件至少在一個位點處橫向地或以一角度至少延伸超出金屬化區域，在此突出部中不固定在該載體上，且具有用於電源線之接觸構件。
圖1展示根據本發明之功率模組—模組1，具有載體2、高度或材料厚度 ＞= 0.3 mm之連接構件3，該連接構件經由金屬化區域4以連接至載體2。根據圖1，載體2為尺寸為7.5吋*5.5吋之板。此等陶瓷板亦稱為基板。第一電子組件19，例如晶片，又經由金屬化區域4以連接至載體2。此第一電子組件19藉助於所謂的接合線21連接至第二電子組件20。第二電子組件20經由金屬化區域直接配置在連接構件3上。在此具體實例中，用元件符號4展示之金屬化區域4包含呈塗層形式之接觸點。此等接觸點中之一些為連接構件3之部分，且此等接觸點中之其他接觸點為第二電子組件20之部分。此使得在無額外構件（接合線21）之情況下將第二電子組件20直接接合至連接構件3。根據圖1之載體2為呈長方體形式之陶瓷載體2。長方體係藉由第一平坦側面5及第二平坦側面6來定界。在此兩個第一平坦側面5及第二平坦側面6之間的距離形成陶瓷載體2之高度。在橫向位向上，載體2係藉由四個側表面來定界。第一側表面7及第二側表面8可見於圖1中。連接構件3係藉由第一端部11及第二端部12來定界。連接構件3之第二端部12經配置在由載體2之側表面形成的區域內。連接構件3之第一端部11經配置成與載體2及與具有第一端部23及第二端部24之金屬化區域4相距一距離。該距離可經看作圖1中之突出部9。突出部9a係藉由在連接構件3之第一端部11與載體2之第一側表面7之間的距離形成。突出部9b為在連接構件3之第一端部11與金屬化區域4之第一端部23之間的距離。在連接構件3之第一端部11處提供接觸構件22。此接觸構件22連接至電源供應器（圖中未示）。因而，可向功率模組供應電流及電壓。為了使功率模組1可得到充分冷卻，其具有冷卻通道14。流體可穿過此等冷卻通道14以便實現且改善熱耗散。
圖2展示根據圖1之根據本發明之模組1的第一平坦側面5之俯視圖。經由金屬化區域4連接至載體2之連接構件3具有五個接觸構件22。距離，亦即間隙，經設置在個別接觸構件22之間。該距離如此大，使得當施加電壓時，兩個鄰近的接觸構件22之間不會出現閃絡（flashover）。接觸構件22之數目以及其大小及設計係取決於模組1之功率消耗且可適應於此。連接構件3突出超出載體2之區域係由突出部9展示。另外，圖2作為實例展示第一電子組件19及第二電子組件20。在第一電子組件19、第二電子組件20之間的連接係由接合線21來指示。為清楚起見，在每一狀況下僅指示兩個接合線21。事實上，複數個此等接合線21係用於電子組件之間的連接。第二電子組件20直接連接至連接構件。不需要接合線21來將第二電子組件20連接至連接構件3。
圖3展示根據本發明之模組1之特定具體實例。連接構件3之第一端部11及第二端部12兩者均位於由載體2之側表面所形成的區域內。金屬化區域4係由第一端部23及第二端部24來定界。連接構件3中配置在載體2之方向上之表面積大於金屬化區域4中連接構件3連接至載體2所經由之表面積。突出部9係由在連接構件3之第一端部11與金屬化區域4之第一端部23之間的距離來形成。陶瓷載體2包含呈鰭片形式之冷卻構件14。此等冷卻構件14為載體2之整體部分且一體地連接至該載體。在冷卻構件14與載體2之間不存在邊界線。冷卻構件14為個別鰭片，其經配置成彼此相距一距離。此會產生空氣可循環通過之空間，進而增加冷卻效能。
圖4展示根據本發明之模組1，其中連接構件3具有釋放區15，該釋放區具有在突出部9之區域中之擴展構件16。以一定方式設計此釋放區15，使得該釋放區補償由於輸入至模組中之功率及相關聯的熱發展而引起之擴展。此會增加模組1之使用壽命。根據圖4之釋放區15由包括擴展構件16之圓形區段組成。擴展構件16經設計成具有可撓性。可達成該可撓性，此係因為此等區段之橫截面相較於連接構件3之橫截面有縮減。另外，可自圖4看到呈冷卻通道形式之冷卻構件14。作為實例在圖4中指示此等冷卻構件14。取決於模組1之應用，冷卻構件在其配置、位向、直徑、大小及其路線方面可不同。
圖5A、圖5B及圖5C中可看到具有不同形狀之釋放區15之擴展構件16。如圖5A展示，該擴展構件為切口，或根據圖5B，為呈三角形形式之傾斜的可撓性區，或根據圖5C，係呈彎曲區段形式。為了增加擴展構件16之可撓性，不管其形狀如何，擴展構件可具有小於連接構件3之橫截面。在圖5C中，可看出，擴展構件16之高度18或材料厚度小於連接構件3之高度17或材料厚度。所有此等以不同方式成形之擴展構件16之共同特徵在於其經設計成具有可撓性。該可撓性可由幾何形狀或例如經錐形化橫截面形成。
圖6展示根據本發明之模組1之立體圖解。在此狀況下，不同冷卻構件14a、14b、14c經配置在載體2上。該載體具有呈冷卻通道形式之冷卻構件14a，亦如圖4中所展示。另外，載體2具有冷卻構件14b，如圖3中所展示。此冷卻構件一體地連接至載體2。另外，可自圖6看出，冷卻構件14c連接至載體2。冷卻構件14c為獨立構件，其使用本身已知的連接技術以連接至載體2。因此，可在冷卻構件14c與載體2之間看到邊界線25。圖6中所展示之各種冷卻構件14a、14b、14c可個別地配置在載體2上或處於任何可想像的組合配置。
另外，可自圖6看到釋放區15。此釋放區15具有以不同方式來設計之擴展構件16。此等擴展構件為釋放區15內之切口，此增加其可撓性。該等切口可由孔、盲孔或任何形狀的凹口形成，該等凹口例如橢圓形凹口或自由成形之凹口。可設想到在釋放區15內之凹口之任何組合以增加此釋放區15之可撓性。
諸圖中無一者展示出電子高效能電路可用不導電灌封（potting）化合物來囊封。若狀況如此，則僅接觸構件22自灌封化合物突出且可連接至外部電源供應器。
1:模組/功率模組 2:載體/陶瓷載體 3:連接構件 4:金屬化區域 5:第一平坦側面 6:第二平坦側面 7:第一側表面 8:第二側表面 9:突出部 9a:突出部 9b:突出部 11:第一端部 12:第二端部 14:冷卻構件 14a:冷卻構件 14b:冷卻構件 14c:冷卻構件 15:釋放區 16:擴展構件 17:高度 18:高度 19:第一電子組件 20:第二電子組件 21:接合線 22:接觸構件 23:第一端部 24:第二端部 25:邊界線
將參考諸圖來解釋本發明。所有圖含有本發明之部分、示意性表示，且作為實例用於解釋本發明。本發明之特定具體實例可偏離此等圖。諸圖中的根據本發明之功率模組之表示係粗略的且示意性的。 在諸圖中： [圖1]為根據本發明之功率模組之橫截面， [圖2]為根據圖1之功率模組之俯視圖， [圖3]展示根據本發明之功率模組之特定具體實例， [圖4]為具有熱釋放區之根據本發明之功率模組的立體圖， [圖5a、圖5b、圖5c]展示根據圖4之功率模組的熱釋放區之不同具體實例，且 [圖6]為具有熱釋放區之不同特性且具有不同冷卻構件之根據本發明之效能模式的立體圖。
1:模組/功率模組
2:載體/陶瓷載體
3:連接構件
4:金屬化區域
5:第一平坦側面
6:第二平坦側面
7:第一側表面
8:第二側表面
9:突出部
9a:突出部
9b:突出部
11:第一端部
12:第二端部
14:冷卻構件
19:第一電子組件
20:第二電子組件
21:接合線
22:接觸構件
23:第一端部
24:第二端部

Claims (16)

  1. 一種模組（1），其中大於1,000 V之電壓及大於100 A之電流係經由電源線來施加，該模組具有 電絕緣載體（2）， 連接構件（3），其具有大於0.3 mm之材料厚度且經由金屬化區域（4）以連接至該電絕緣載體（2），該金屬化區域係由第一端部（23）及第二端部（24）來定界， 電子組件（19，20），其視需要電連接至該連接構件（3），及 冷卻構件（14），其中 該連接構件（3），較佳地為銅，至少在一個位點處突出超出該金屬化區域（4）之一個端部（23，24），且在此區域（9）中，不固定至該電絕緣載體（2）並且具有接觸構件（22），且其中至少一個電子組件（20）經由該金屬化區域（4）以連接至該連接構件（39）。
  2. 如請求項1之模組（1），其中該連接構件（3）及該至少一個電子組件（20）經配置在該電絕緣載體（2）之第一平坦側面（5）上，且該冷卻構件（14）經配置在該電絕緣載體（2）之第二平坦側面（6）上。
  3. 如請求項1或2之模組（1），其中該載體（2）係由側表面來定界，且該連接構件（3）伸出超出該電絕緣載體（2）之至少一個側表面（7）。
  4. 如請求項1或2之模組（1），其中該連接構件（3）具有至少一個熱釋放區（15）。
  5. 如請求項4之模組（1），其中該至少一個熱釋放區（15）經配置在該電絕緣載體（2）外部，較佳地直接鄰近該電絕緣載體。
  6. 如請求項4之模組（1），其中該至少一個熱釋放區（15）具有擴展構件（16）。
  7. 如請求項6之模組（1），其中該擴展構件（16）之橫截面小於該連接構件（3）之橫截面。
  8. 如請求項6之模組（1），其中該擴展構件（16）係由開口或材料凹口來形成。
  9. 如請求項1或2之模組（1），其中該電絕緣載體（2）為燒結陶瓷。
  10. 如請求項1或2之模組（1），其中該電絕緣載體（2）之該冷卻構件（14）由鰭片來形成。
  11. 如請求項10之模組（1），其中經設計為該鰭片之該冷卻構件（14）一體地連接至該電絕緣載體（2）且無邊界線。
  12. 如請求項1或2之模組（1），其中該電絕緣載體（2）之該冷卻構件（14）係由空腔來形成。
  13. 如請求項1或2之模組（1），其中該連接構件（3）經由AMB製程以接合至該電絕緣載體（2）。
  14. 一種用於生產一電子高效能模組之方法，該電子高效能模組經由電源線而經供應有大於1,000 V之電壓及大於100 A之電流，該電子高效能模組包含：電絕緣陶瓷載體（2），厚度大於0.3 mm之連接構件（3）藉助於金屬化區域（4）以固定在該電絕緣陶瓷載體上；及電子組件（20，19），其經配置在該電絕緣陶瓷載體（2）上且視需要電連接至該連接構件（3），該電子高效能模組之特徵在於該連接構件（3）至少在一個位點處橫向地或以一角度至少延伸超出該金屬化區域（4），在此突出部（9）中不固定在該電絕緣陶瓷載體（2）上且具有用於電源線之連接凸片（22），且其中至少一個電子組件（20）經由該金屬化區域（4）以連接至該連接構件（3）。
  15. 如請求項14之方法，其中該電絕緣陶瓷載體（2）為燒結陶瓷，且該連接構件（3）經由AMB製程運用活性焊料（4）至該金屬化區域（4）而固定至該電絕緣陶瓷載體（2）。
  16. 如請求項14或15之方法，其中所使用之該活性焊料（4）為焊錫膏，該焊錫膏經印刷為厚度在20 µm至40 µm之間的板。
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