TW202145468A - 用於晶粒拼接應用的芯粒(chiplet)優先架構(二) - Google Patents
用於晶粒拼接應用的芯粒(chiplet)優先架構(二) Download PDFInfo
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- TW202145468A TW202145468A TW110130795A TW110130795A TW202145468A TW 202145468 A TW202145468 A TW 202145468A TW 110130795 A TW110130795 A TW 110130795A TW 110130795 A TW110130795 A TW 110130795A TW 202145468 A TW202145468 A TW 202145468A
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Abstract
本文中所揭示之實施例包括電子封裝體及形成此等電子封裝體之方法。在一實施例中,電子封裝體包含一模層,此模層具有第一表面及與第一表面相對之第二表面,及嵌入模層中的複數個第一晶粒。在一實施例中,複數個第一晶粒之每一者具有與模層之第一表面實質上共平面的一表面。在一實施例中,電子封裝體進一步包含嵌入於模層中之一第二晶粒。在一實施例中,第二晶粒係設置於複數個第一晶粒與模層之第二表面之間。
Description
發明領域
本發明之實施例係關於電子封裝,且更特定來說係關於具有第一晶粒及在第一晶粒上的第二晶粒之多晶粒電子封裝體以及形成此類電子封裝體之方法。
發明背景
對於形狀因子之小型化及對於高效能整合之增加等級之需求推動在半導體工業中複雜封裝方法。藉由嵌入式多晶粒互連橋接件(EMIB)架構致能之晶粒分割允許小形狀因子之小型化及高效能而不產生其他方法有的問題。然而,這樣的封裝架構需要由於不良凸塊厚度變化(BTV)而易於產生之問題之精細晶粒對晶粒互連件(例如:由於翹曲、對總成工具的限制及類似者)。
亦已提出使用在精細晶粒與傳統有機基體之間含有未加工節點晶粒之一補塊的替代作法。此等架構允許在不同處理節點形成之晶粒之整合。此架構亦具有數個限制。特定來說,高階節點晶粒係使用熱壓接合(TCB)在封裝體形成的稍後階段附接至低階節點晶粒。因此,晶粒置放準確度係受限於TCB 工具集及翹曲。在稍後的階段,TCB附接強加嚴格翹曲限制在補塊上並驅動一顯著低階的TCB窗口。此外,提出的架構亦依賴在高階節點晶粒附接之後的第二載體附接,以便實現中層級互連件(MLI)與封裝體側凸塊(PSB)。這導致額外的產率損失。
依據本發明之一實施例,係特地提出一種多晶粒電子封裝體,其包含:在一第一模層中的一第一晶粒,該第一晶粒包含互連件,該第一晶粒具有一主動表面,且該第一晶粒具有複數個通過基體通孔;在該第一模層中的第一複數個通孔,該等第一複數個通孔橫向鄰接於該第一晶粒的一第一側,該等第一複數個通孔之每一者自該第一模層的一頂表面延伸至該第一模層的一底表面;在該第一模層中的第二複數個通孔,該等第二複數個通孔橫向鄰接於該第一晶粒的一第二側,該等第二複數個通孔之每一者自該第一模層的該頂表面延伸至該第一模層的該底表面;一第二晶粒,其電氣耦接至該第一晶粒,且該第二晶粒電氣耦接至該等第一複數個通孔;一第三晶粒,其電氣耦接至該第一晶粒,該第三晶粒藉由該第一晶粒之該等互連件而電氣耦接至該第二晶粒;以及一第二模層,其介於該第二晶粒及該第三晶粒之間且與該第二晶粒及該第三晶粒接觸。
較佳實施例之詳細說明
根據各種實施例,本文中所描述的係具有第一晶粒及在第一晶粒上方之第二晶粒之多晶粒電子封裝體及形成此等電子封裝體之方法。在以下描述中,將使用熟習此項技術者通常採用之術語來描述例示性實現例之各種態樣,以便向其他熟習此項技術者傳達其工作實質。然而,對熟習此項技術者顯而易見的是本發明可以以僅具有所描述態樣中之一些來實踐。為了說明的目的,依次序提出特定數字、材料及組態以供徹底瞭解繪示性實行方式。然而,熟習此項技術者將顯而易見,可在無特定細節的情況下實踐本發明。在其他情況下,省略或簡化眾所周知的特徵以免混淆該等示範具體實作。
進而將會採用一最有助於理解本發明的方式,將各種操作描述為多個分立的操作,然而,說明順序不應該視為意味著這些操作必然順序相依。特別是,此等操作不需要按呈現之順序來執行。
如上文所提到,多晶粒封裝體提供繼續定標至較小外觀尺寸的能力在同時亦獲得高階效能。然而,當前架構遭受負面地影響產率的總成問題。因此,本文所揭示之實施例包括以最小化翹曲及對準問題之程序流程組裝的多晶粒封裝體。
特別是,本文中所揭示之實施例包括在高階處理節點處的複數個第一晶粒及在低階處理節點的一或更多個第二晶粒。在一實施例中,將第一晶粒在封裝體總成的初始階段置放於封裝體中。第一晶粒之早期放置具有數個優點。其一,置放程序可以一晶粒安裝器而不是一熱壓接合(TCB)工具來實現。晶粒安裝器具有一放置精確度,其是比TCB工具精確的一量級。另外,在第一晶粒之早期階段置放期間存在較少翹曲。
在一實施例中,低階節點第二晶粒至第一晶粒的附接亦具有一較大TCB窗口。由於封裝體仍然在尺寸穩定(例如:玻璃)載體上附接至第一晶粒,TCB窗口被改良,因此在適當位置上產生低翹曲。此外,實施例允許在載體被移除之前中層級互連件(MLI)及PSB形成。因此,可避免用於此類特徵之形成另外需要的額外載體。
現在參考圖1A,根據一實施例顯示之一多晶粒電子封裝體100的一截面圖。在一實施例中,電子封裝體100可包含模層120,其具有嵌入模層中的複數個晶粒。舉例來說,複數個第一晶粒107及一第二晶粒110可嵌入模層120中。雖然模層120係顯示為由分立的層所構成,應瞭解模層120的不同部分之間可能不存在可識別邊界。在一實施例中,模層120可包含第一表面109及與第一表面109相對之第二表面127。模層120可包含用於電子封裝的任何合適的材料,諸如環氧樹脂或類似者。
在一實施例中,複數個第一晶粒107可嵌入模層120中使得第一晶粒107的表面108與模層120的第一表面109實質上共平面。在一實施例中,表面108可稱為第一晶粒107的背側表面。由於露出背側表面108,電子封裝體100之熱管理被改良。在一些實施例中,可將散熱片或其他熱解決方案接附至第一晶粒107的背側表面108。
在一實施例中,複數個高速輸入/輸出HSIO晶粒112亦可嵌入模層120中。HSIO晶粒112可與第一晶粒107實質上共平面。亦即,HSIO晶粒112之背側表面113可與模層120的第一表面109及第一晶粒107的背側表面108實質上共平面。
在一實施例中,複數個第一晶粒107可與嵌入至模層120中的一第二晶粒110電氣耦接。在一實施例中,第二晶粒110係設置於第一晶粒107之主動表面106與模層120之第二表面127之間。第二晶粒110可具有主動表面114及背側表面115。在一實施例中,第二晶粒110及第一晶粒107以面對面組態配置。亦即,第二晶粒110之主動表面114面向第一晶粒107之主動表面106。在一實施例中,可在第一處理節點製造第一晶粒107,且可在較第一處理節點不高階之第二處理節點製造第二晶粒110。
在一實施例中,第一晶粒107可以第一層級互連件(FLIs)118電氣耦接至第二晶粒110。舉例來說,第一晶粒107的襯墊117可由FLIs 118電氣耦接至第二晶粒110的襯墊119,諸如控制塌陷晶片連結(C4)凸塊、或其類似者。在一實施例中,第二晶粒110的襯墊119及FLIs 118可由底部填充材料111圍繞,而第一晶粒107的襯墊117可由模層120圍繞。
在一特定實施例中,第一晶粒107可通過第二晶粒110相互互連。亦即,第二晶粒110可作用為在第一晶粒107的每一者之間提供互連的一補塊。在一些實施例中,第一晶粒107可全部實質上彼此類似。在其他實施例中,第一晶粒107可包含不同功能。在所例示實施例中,顯示四個第一晶粒107。然而,應瞭解任何數目的第一晶粒107(例如:二或更多個)陣列可在電子封裝體100中使用。
在一實施例中,HSIO晶粒112亦可電氣耦接至第二晶粒110。舉例來說,HSIO晶粒112可以實質上與第一晶粒107連接至第二晶粒110相同方式藉由FLIs118電氣耦接至第二晶粒110上的襯墊119。在一實施例中,第二晶粒110可在第一晶粒107和HSIO晶粒112之間提供互連。
在一實施例中,包含導電跡線、襯墊125、及通孔124的複數個重新分配層(RDLs)係可嵌入模層120中。RDLs可將第一晶粒107、第二晶粒110、及HSIO晶粒112的表面電氣耦接至在模層120的第二表面127上方的中層級互連件(MLIs) 128。在一實施例中,MLIs 128可透過阻焊劑122設置於開口中,如在此項技術中已知的。
現在參考圖1B,其根據一額外實施例顯示一電子封裝體101的一截面圖。在一實施例中,電子封裝體101可實質上類似於上方關於圖1A所描述之電子封裝體100,除了包括複數個第二晶粒110之外。在所例示實施例中,顯示兩個第二晶粒110A
及110B
。然而,應瞭解任何數目的第二晶粒110 (例如:二或更多個)陣列可包括於電子封裝體101中。
在一實施例中,第二晶粒110可與一或更多個橋接件130電氣耦接。橋接件130可為一嵌入式多晶粒互連橋接件(EMIB)或類似者。舉例來說,橋接件130可包含具有適用於連接至在第二晶粒110之背側表面115上之襯墊119之細微間距之襯墊131。舉例來說,FLIs 118可將襯墊131電氣耦接至襯墊119。在一實施例中,襯墊131及FLIs 118可被底部填充材料111圍繞,而在第二晶粒110之背側表面115上的襯墊119可由模層120圍繞。
第二晶粒110陣列與一或更多個橋接件130之互連提供晶粒拼接架構。亦即,複數個第二晶粒110可作用為單一晶粒。當第二晶粒之組合區域超過用以製造第二晶粒110之處理節點的標線極限時,此可特別有利。
現在參考圖2A,其根據一實施例顯示出一電子封裝體200的一截面圖。在一實施例中,電子封裝體200可包含模層220,其具有嵌入模層中的複數個晶粒。舉例來說,複數個第一晶粒207及第二晶粒210可嵌入模層220中。雖然模層220係顯示為由分立的層所構成,應瞭解模層220的不同部分之間可能不存在可識別邊界。在一實施例中,模層220可包含第一表面209及與第一表面209相對的第二表面227。模層220可包含用於電子封裝的任何合適的材料,諸如環氧樹脂或類似者。
在一實施例中,複數個第一晶粒207可嵌入模層220中。與上述電子封裝體100對比,第一晶粒207之表面208可由模層220覆蓋。在一實施例中,表面208可稱為第一晶粒207的背側表面。
在一實施例中,複數個HSIO晶粒212亦可嵌入模層220中。HSIO晶粒212係可實質上與模層220的第一表面209共平面。亦即,HSIO晶粒212之背側表面213與該模層220的第一表面209可實質上共平面。在一實施例中,第一晶粒207的厚度T1可不同於HSIO晶粒212的厚度T2。舉例來說,第一晶粒207的厚度T1可小於HSIO212的厚度T2。如圖2A中所顯示,HSIO晶粒212的背側表面213與模層220的表面209實質上共平面。然而,請瞭解模層220亦可完全地嵌入HSIO晶粒212以使得背側表面213被模層220覆蓋。
在一實施例中,複數個第一晶粒207可電氣耦接至嵌入模層220中的一第二晶粒210。在一實施例中,第二晶粒210設置於第一晶粒207的主動表面206與模層220的第二表面227之間。第二晶粒210可具有主動表面214及背側表面215。在一實施例中,第二晶粒210及第一晶粒207以面對面組態配置。亦即,第二晶粒210之主動表面214面向第一晶粒207之主動表面206。在一實施例中,可在第一處理節點製造第一晶粒207,且可在較第一處理節點不高階之第二處理節點製造第二晶粒210。在一實施例中,阻焊層242可位於第一晶粒207與第二晶粒210之間。
在一實施例中,第一晶粒207可電氣耦接至第二晶粒210帶有第一層級互連件(FLIs)218以及穿過阻焊層242的一通孔246。舉例來說,第一晶粒207之襯墊217可藉由FLIs218電氣耦接至通孔246。通孔246之相對表面亦可藉由FLIs 218電氣耦接至第二晶粒210之襯墊219。在一實施例中,第二晶粒210之襯墊219以及在通孔246及第二晶粒210間之FLIs 218可由底部填充材料211圍繞。在一實施例中,第一晶粒207之襯墊217及第一晶粒207之間的FLIs 218可由不同底部填充材料211圍繞。
在一特定實施例中,第一晶粒207可透過第二晶粒210相互互連。亦即,第二晶粒210可作用為在第一晶粒207的每一者之間提供互連的一補塊。在一些實施例中,第一晶粒207可全部實質上彼此類似。在其他實施例中,第一晶粒207可包含不同功能。在所例示實施例中,顯示四個第一晶粒207。然而,應瞭解任何數目的第一晶粒207(例如:二或更多個)陣列可在電子封裝體200中使用。
在一實施例中,HSIO晶粒212亦可電氣耦接至第二晶粒210。舉例來說,實質上以第一晶粒207連接至第二晶粒210相同的方式,HSIO晶粒212可藉由FLIs 218以及穿過阻焊層242的數個通孔246電氣耦接至第二晶粒210上的襯墊219。在一實施例中,第二晶粒210可在第一晶粒207和HSIO晶粒212之間提供互連。
在一實施例中,包含導電跡線、襯墊225、及通孔224的複數個重新分配層(RDLs)係可嵌入模層220中。RDLs可將第一晶粒207、第二晶粒210、及HSIO晶粒212的表面電氣耦接至在模層220的第二表面227之上的中層級互連件(MLIs) 228。在一實施例中,MLIs 228可透過阻焊劑222設置在開口中,如在此項技術中已知的。
現在參考圖2B,其根據一額外實施例顯示一電子封裝體201之一截面圖。在一實施例中,電子封裝體201可實質上類似於上文關於圖2A所描述之電子封裝體200,除了包括複數個第二晶粒210之外。在所例示之實施例中,顯示兩個第二晶粒210A
及210B
。然而,應瞭解任何數目個第二晶粒210 (例如:二或更多個)陣列可包括於電子封裝體201中。
在一實施例中,第二晶粒210可與一或更多個橋接件230電氣耦接在一起。橋接件230可為一EMIB或其類似者。舉例來說,橋接件230可包含具有適用於連接至在第二晶粒210之背側表面215上之襯墊219之細微間距之襯墊231。舉例來說,FLIs 218可電氣耦接襯墊231至襯墊219。在一實施例中,襯墊231及FLIs 218可由底部填充材料211圍繞,而在第二晶粒210之背側表面215上的襯墊219可由模層220圍繞。
第二晶粒210陣列與一或更多個橋接件230之互連提供晶粒拼接架構。亦即,複數個第二晶粒210可作用為單一晶粒。當第二晶粒之組合區域超過用以製造第二晶粒210之處理節點的標線極限時,此可特別有利。
現在參考圖3A至3J,其根據一實施例顯示一系列截面圖,描繪類似於圖1A中描述之電子封裝體100之電子封裝體300之製造程序。如將顯而易見的是,程序包括使第一晶粒307在總成程序中的早期安裝,以便提供對於因翹曲而不易受到變化的改良對準。
現在參考圖3A,其根據一實施例顯示在置放第一晶粒307之後的一電子封裝體300之一截面圖。在一實施例中,第一晶粒307可附接至載體370上的釋放層371。載體370可為並不易受到顯著翹曲影響的尺寸穩定材料。舉例來說,載體370可為玻璃載體。
在一實施例中,第一晶粒307可以一晶粒安裝器工具安裝至釋放層。使用一晶粒安裝器工具來放置第一晶粒307提供相較於TCB工具來說改良的放置準確性。一晶粒安裝器工具典型地具有一放置精度,其是比TCB工具好的一量級。舉例來說,一TCB工具通常具有一± 15 µ m之精確度,而一晶粒安裝器工具具有一± 5 µ m之精確度。
在一實施例中,第一晶粒307係安裝至釋放層371,此釋放層371與背側表面308介接。因此,主動表面306及第一晶粒307之主動表面306上的襯墊317係背對載體370。在一實施例中,複數個HSIO晶粒312亦可安裝至釋放層371。HSIO晶粒312的背側表面313在襯墊317背對載體370的情況下可與釋放層371介接。因此,第一晶粒307的背側表面308可與HSIO晶粒312的背側表面313實質上共平面。
現在參考圖3B,其根據一實施例在模層320安置於第一晶粒307上方之後,顯示HSIO晶粒312及載體370之電子封裝體300之一截面圖。在一實施例中,模層320可被安置及平坦化以便露出第一晶粒307及HSIO晶粒312的襯墊317之表面。模層320可以一研磨或拋光程序平坦化,如在此項技術中已知的。
現在參考圖3C,其根據一實施例顯示在通孔324在選定襯墊317上方製造後之電子封裝體300的一截面圖。在一實施例中,通孔324可為導電柱或用於形成電子封裝體中之通孔的任何其他合適的導電特徵件。在一實施例中,通孔324可製造於HSIO晶粒312上之襯墊317上方。
現在參考圖3D,其根據一實施例顯示在第二晶粒310附接至第一晶粒307及HSIO晶粒312之後的電子封裝體之截面圖。在一實施例中,第二晶粒310可附接有一TCB工具。由於TCB附接發生在封裝體總成之早期階段(且尺寸穩定載體370仍就定位),翹曲之衝擊為最小。因此,極小或沒有產率損失。
在一實施例中,第二晶粒310可耦接至具有FLIs 318之第一晶粒307及HSIO晶粒312。舉例來說,C4凸塊可將第一晶粒307及HSIO晶粒312之襯墊317電氣耦接至第二晶粒310之襯墊319。在一實施例中,底部填充材料311可圍繞第二晶粒310之FLIs 318及襯墊319。
在一實施例中,第二晶粒310可以面對面組態安裝至第一晶粒307。亦即,第二晶粒310之主動表面314可面向第一晶粒307之主動表面306(亦即,襯墊317下方的表面)。在一實施例中,襯墊319也可形成於第二晶粒310的背側表面315之上。在背側表面315上方的襯墊319可為用於通過基體通孔(TSVs)(未顯示)的襯墊,其允許電氣連結自主動表面314通過第二晶粒310至背側表面315。在一實施例中,可在第一處理節點製造第一晶粒307,且可在較第一處理節點不高階之第二處理節點製造第二晶粒310。
現在參考圖3E,其根據一實施例顯示在模層320安置於第二晶粒310及通孔324上方及周圍後之電子封裝體300的一截面圖。在一實施例中,模層320可被平坦化(例如:以拋光或研磨)以露出襯墊319及通孔324之表面。
現在參考圖3F,其根據一實施例顯示在襯墊325及通孔324形成之後電子封裝體300之一截面圖。在一實施例中,襯墊325及通孔324可用於形成於第二晶粒310上方之重新分配層(RDL)。
現在參考圖3G,其根據一實施例顯示在額外RDLs形成後之電子封裝體300的一截面圖。在一實施例中,RDLs可包含嵌入模層320中的襯墊325及通孔324。在一實施例中,RDLs係以微影通孔程序製造(例如:襯墊/通孔形成、模製、研磨/拋光以露出通孔等)。在其他實施例中,RDLs可使用傳統高密度互連(HDI)有機堆積介電層、鍍敷及類似者以合適的半加成程序(SAP)製造。如圖3G所顯示,模層320包括複數個可辨別層。然而,應瞭解在一些實施例中,模層320的層體之間可沒有可識別邊界。
現在參考圖3H,其根據一實施例顯示在阻焊層322安置在模層320的一表面327上且圖案化後一電子封裝體300之一截面圖。在一實施例中,圖案化阻劑層以形成在模層320上方露出襯墊325之複數個開口323。
現在參考圖3I,其根據一實施例顯示在MLIs 328安置在開口323中之後的電子封裝體300的一截面圖。在一實施例中,MLIs 328可包含焊料或類似者。此外,應瞭解在尺寸穩定載體仍附接至電子封裝體300時實現MIL形成。因此,不需要額外載體之附接,如同先前揭示方法之情況。
現在參考圖3J,其根據一實施例顯示在載體370及釋放層371被移除後之電子封裝體300的一截面圖。在一實施例中,可用典型濕式或乾式清潔方法移除任何釋放層殘餘物,如在此項技術中已知的。在清潔之後,封裝體300可加以切單以具有所要大小。
如圖3J所顯示,第一晶粒307的背側表面308係露出。因此,電子封裝體300之熱管理被改良。在一些實施例中,一熱解決方案(例如:一散熱片、一散熱器等)可耦接至第一晶粒307的背側表面308。在一實施例中,第一晶粒307的背側表面308與HSIO晶粒312的背側表面313及模層320的表面309實質上共平面。
現在參考圖4A至4D,其根據一實施例顯示一系列截面圖,描繪類似於關於圖1B描述之電子封裝體101之電子封裝體401之形成程序。
現在參考圖4A,其根據一實施例顯示在複數個第二晶粒410附接至第一晶粒後的電子封裝體401之截面圖。在一實施例中,接著來的電子封裝體401可以實質上類似於圖3A至3C描述之處理操作製造。例如,第一晶粒407的背側表面408與HSIO晶粒412的背側表面413可安裝至尺寸穩定載體470上方的釋放層471,以及通孔424可形成在HSIO晶粒412之上。
在一實施例中,第二晶粒410A
及410B
可以一TCB工具附接至第一晶粒407。由於TCB附接發生在封裝體總成之早期階段(且尺寸穩定載體470仍就定位),翹曲之衝擊為最小。因此,極小或沒有產率損失。
在一實施例中,第二晶粒410A
與410B
可以FLIs 418耦接至第一晶粒407及HSIO晶粒412。舉例來說,C4凸塊可將第一晶粒407及HSIO晶粒412之襯墊417電氣耦接至第二晶粒410之襯墊419。在一實施例中,底部填充材料411可圍繞第二晶粒410之FLIs 418及襯墊419。
在一實施例中,第二晶粒410可用面對面組態安裝至第一晶粒407。亦即,第二晶粒410之主動表面414可面對第一晶粒407之主動表面406。在一實施例中,襯墊419亦可形成於第二晶粒410之背側表面415上。在背側表面415上方的襯墊419可為用於通過基體通孔(TSVs)(未顯示)的襯墊,其允許電氣連結自主動表面414通過第二晶粒410至背側表面415。在一實施例中,可在第一處理節點製造第一晶粒407,且可在較第一處理節點不高階之第二處理節點製造第二晶粒410。
現在參考圖4B,其根據一實施例顯示在模層420安置在第二晶粒410及通孔424上方及周圍後之電子封裝體401的一截面圖。在一實施例中,模層420可被平坦化(例如:以拋光或研磨)以露出襯墊419及通孔424之表面。
現在參考圖4C,其根據一實施例顯示在橋接件430跨第二晶粒410A
及410B
附接之後的電子封裝體401之截面圖。在一實施例中,橋接件430可為在第二晶粒410A
與410B
之間提供電氣耦接之EMIB或類似者。第二晶粒410陣列與一或更多個橋接件430之互連提供晶粒拼接架構。亦即,複數個第二晶粒410可作用為單一晶粒。當第二晶粒410之組合區域超過用以製造第二晶粒410之處理節點的標線極限時,此可特別有利。
在一實施例中,橋接件430可包含襯墊431,其係電氣耦接至第二晶粒410之背側表面415上的襯墊419。在一實施例中,襯墊419可電氣耦接至具有FLIs 418之襯墊431。襯墊431及FLIs 418可由底部填充材料411圍繞。儘管圖4C所顯示的是單一橋接件430,然而應瞭解電子封裝體401可包含複數個橋接件430以在任意數量的第二晶粒410之間提供連結。
現在參考圖4D,其根據一實施例顯示在包含襯墊425、通孔424、及模層420之RDLs被製造於第二晶粒410上方之後的電子封裝體之一截面圖。於一實施例中,RDLs可以微影通孔程序或以標準SAP程序被製造。在一實施例中,阻焊劑422係可形成於模層420的表面427上。MLIs 428可穿過阻焊劑422以提供襯墊425連結。此外,應瞭解在尺寸穩定載體仍附接至電子封裝體401時實現MIL形成。因此,不需要額外載體之附接,如同先前揭示方法之情況。
現在參考圖4E,其根據一實施例顯示在載體470及釋放層471被移除之後電子封裝體401的截面圖。在一實施例中,可用典型濕式或乾式清潔方法移除任何釋放層殘餘物,如在此項技術中已知的。在清潔之後,封裝體401可加以切單以具有所要大小。
如圖4E所顯示,第一晶粒407的背側表面408係露出。因此,電子封裝體401之熱管理被改良。在一些實施例中,一熱解決方案(例如:一散熱片、一散熱器等)可耦接至第一晶粒407的背側表面408。在一實施例中,第一晶粒407的背側表面408可與HSIO晶粒412的背側表面413及模層420的表面409實質上共平面。
現在參考圖5A至5G,其根據一實施例顯示一系列截面圖,描繪用以形成類似於圖2A所顯示之電子封裝體200的一電子封裝體500之程序。
現在參考圖5A,其根據一實施例顯示具有晶種層573之第一載體570之一截面圖。在一實施例中,第一載體570可為諸如玻璃之任何尺寸穩定載體。
現在參考圖5B,其根據一實施例顯示在具有圖案化開口543之阻焊層542安置於晶種層573上方之後的電子封裝體500之一截面圖。阻焊層542可藉由層壓程序或其類似者安置。
現在參考圖5C,其根據一實施例顯示在通孔546及FLIs 518安置於開口543中後之電子封裝體500的一截面圖。在一實施例中,通孔546可為銅或類似者,且FLIs 518可為焊料凸塊或類似者。
現在參考圖5D,其根據一實施例顯示在安裝第一晶粒507及HSIO晶粒512後的電子封裝體500之一截面圖。在一實施例中,第一晶粒507及HSIO晶粒512可以一TCB工具安裝至FLIs 518。因此,襯墊517可附接至FLIs 518。襯墊517及FLIs 518可由底部填充材料511圍繞。如圖所顯示,第一晶粒507可以一面朝下的組態附接。亦即,第一晶粒507之主動表面506可面向第一載體570,且第一晶粒507之背側表面508可背對第一載體570。
在一實施例中,面對面的組態提供第一晶粒507及HSIO晶粒512的厚度不需要相同的一優點。舉例來說,第一晶粒507可具有一第一厚度T1,而HSIO晶粒512可具有與第一厚度T1不同(例如:大於)之第二厚度T2。在一實施例中,在第一晶粒507及HSIO晶粒512已安裝至第一載體570之後,模層520可安置於第一晶粒507及HSIO晶粒512的上方及周圍。在一些實施例中,模層520可藉由研磨或拋光程序凹入以露出HSIO晶粒背側表面。
現在參考圖5E,在移除第一載體570且將第二載體580附接至電子封裝體500之相反表面後之電子封裝體500之截面圖。如所顯示,第二載體580可與模層520介接且阻焊劑542現在朝上背對第二載體580。在一實施例中,晶種層573可被圖案化以在通孔546上方形成襯墊574。
現在參考圖5F,其根據一實施例顯示在製造通孔524且第二晶粒510附接至第一晶粒507及第HSIO晶粒512後電子封裝體500之截面圖。在一實施例中,第二晶粒510可以一TCB工具被附接。由於TCB附接發生在封裝體總成之早期階段(且尺寸穩定第二載體580仍就定位),翹曲之衝擊為最小。因此,極小或沒有產率損失。
在一實施例中,第二晶粒510可以FLIs 518耦接至第一晶粒507及HSIO晶粒512。舉例來說,FLIs 518可透過阻焊劑542將第二晶粒510的襯墊519耦接至通孔546。在一實施例中,底部填充材料511可圍繞第二晶粒510之FLIs 518及襯墊519。
在一實施例中,第二晶粒510可以面對面組態安裝至第一晶粒507。亦即,第二晶粒510之主動表面514可面向第一晶粒507之主動表面506。在一實施例中,襯墊519亦可形成於第二晶粒510的背側表面515上方。在背側表面519上方的襯墊519可為用於通過基體通孔(TSVs)(未顯示)的襯墊,其允許電氣連結自主動表面514通過第二晶粒510至背側表面515。在一實施例中,可在第一處理節點製造第一晶粒507,且可在較第一處理節點不高階之第二處理節點製造第二晶粒510。
現在參考圖5G,其根據一實施例顯示在包含襯墊525和通孔524之RDLs形成且第二載體580被移除後的一截面圖。於一實施例中,RDLs以微影通孔程序或SAP程序而製造,如在此項技術中已知的。如圖5G所顯示,模層520包括複數個可辨別層。然而,應瞭解在一些實施例中,模層520的層體之間可沒有可識別邊界。
在一實施例中,阻焊層522係安置於模層520之表面527上方。在一實施例中,抗蝕層被圖案化且MLIs 528可被安置。在一實施例中,MLIs 528可包含一焊料或類似者。此外,應瞭解在尺寸穩定第二載體580仍附接至電子封裝體500時實現MLI形成。因此,不需要額外載體之附接,如同先前揭示方法之情況。
在一實施例中,移除第二載體580以露出模層520之表面509。如圖5G所顯示,第一晶粒507之背側表面508嵌入模層520中。在一些實施例中,HSIO晶粒512的背側表面513露出。然而,在其他實施例中,HSIO晶粒512的背側表面513亦可嵌入模層520中。
現在參考圖6A至6C,其根據一實施例顯示一系列截面圖,描繪用以形成類似於關於圖2B描述之電子封裝體201的電子封裝體601之程序。
現在參考圖6A,其根據一實施例顯示在複數個第二晶粒610耦接至第一晶粒607後的電子封裝體601之截面圖。在一實施例中,接著來的電子封裝體601可以實質上類似於圖5A至5E描述之處理操作製造。舉例來說,第一晶粒607的背側表面608及HSIO晶粒612的背側表面613可面對一第二載體680,且通孔624可形成於HSIO晶粒612之上。另外,具有通孔646之阻焊劑642可設置於第一晶粒607及HSIO晶粒612上方。
在一實施例中,可以一TCB工具將第二晶粒610A
及610B
附接至第一晶粒607。由於TCB附接發生在封裝體總成之早期階段(且尺寸穩定第二載體680仍就定位),翹曲之衝擊為最小。因此,極小或沒有產率損失。
在一實施例中,第二晶粒610A
及610B
可以與具有FLIs 618之第一晶粒607及HSIO晶粒612耦接。舉例來說,FLIs 618可透過阻焊劑642將第二晶粒610之襯墊619耦接至通孔646。在一實施例中,底部填充材料611可圍繞第二晶粒610之FLIs 618及襯墊619。
在一實施例中,第二晶粒610可以一面對面組態安裝至第一晶粒607。亦即,第二晶粒610之主動表面614可面向第一晶粒607之主動表面606。在一實施例中,襯墊619亦可形成於第二晶粒610之背側表面615上方。在背側表面619上方的襯墊619可為用於通過基體通孔(TSVs)(未顯示)的襯墊,其允許電氣連結自主動表面614通過第二晶粒610至背側表面615。在一實施例中,可在第一處理節點製造第一晶粒607,且可在較第一處理節點不高階之第二處理節點製造第二晶粒610。
現在參考圖6B,其根據一實施例顯示在模層620圍繞第二晶粒610且橋接件630係橫跨附接在第二晶粒610A
及610B
後之電子封裝體601的一截面圖。在一實施例中,橋接件630可為在第二晶粒610A
與610B
之間提供電氣耦接的EMIB或類似者。第二晶粒610陣列與一或更多個橋接件630之互連提供晶粒拼接架構。亦即,複數個第二晶粒610可作用為單一晶粒。當第二晶粒610之組合區域超過用以製造第二晶粒610之處理節點的標線極限時,此可特別有利。
在一實施例中,橋接件630可包含電氣耦接至第二晶粒610之背側表面615上的襯墊619之襯墊631。在一實施例中,襯墊619可電氣耦接至具有FLIs 618之襯墊631。襯墊631及FLIs 618可由底部填充材料611圍繞。雖然圖6B中顯示單一橋接件630,然而應瞭解電子封裝體601可包含複數個橋接件630以提供任何數目的第二晶粒610之間的連結。
現在參考圖6C,其根據一實施例顯示在包含襯墊625及通孔624之RDLs形成且移除第二載體680之後的截面圖。於一實施例中,RDLs以微影通孔程序或SAP程序而製造,如在此項技術中已知的。如圖6C所顯示,模層620包括複數個可辨別層。然而,應瞭解在一些實施例中,模層620的層體之間可沒有可識別邊界。
在一實施例中,阻焊層622安置於模層620的一表面627上方。在一實施例中,阻抗層被圖案化且MLIs 628可被安置。在一實施例中,MLIs 628可包含焊料或類似者。此外,應瞭解在尺寸穩定第二載體680仍附接至電子封裝體601時實現MLI形成。因此,不需要額外載體之附接,如同先前揭示方法之情況。
在一實施例中,移除第二載體680以露出模層620之一表面609。如圖6C所顯示,第一晶粒607的背側表面608嵌入模層620中。在一些實施例中,HSIO晶粒612的背側表面613露出。然而,在其他實施例中,HSIO晶粒612的背側表面613也可嵌入模層620中。
現在參考圖7,其根據一實施例顯示一電子系統750之一截面圖。在一實施例中,電子系統750可包含一電子封裝體700,其包含複數個晶粒。舉例來說,複數個晶粒可包含第一晶粒707及第二晶粒710。在一實施例中,第二晶粒710可藉由諸如EMIB之橋接件730電氣耦接在一起。在一些實施例中,第一晶粒707及第二晶粒710以面對面組態定向。在一些實施例中,第一晶粒707在第一處理節點製造,且第二晶粒710在較第一處理節點不高階之第二處理節點製造。在一實施例中,電子封裝體700可以是任何諸如上述被更詳細地揭示之電子封裝體。
在一實施例中,電子封裝體700可電氣耦接至一板790。舉例來說,電子封裝體700的MLIs 728可被電氣和機械耦接到在板790上的襯墊(未顯示)。儘管MLIs 728被例示為焊料凸塊,應瞭解電子封裝體700可與任何合適的互連架構連接到板790。板790可為任何合適的板,例如印刷電路板(PCB)或類似者。
圖8例示根據本發明之一實現例的運算裝置800。運算裝置800安放一板802。板802可包括多個組件,包括但不限於處理器804及至少一個通訊晶片806。可將處理器804實體地且電氣耦接至板802。在一些實現例中,至少一個通訊晶片806亦實體地且電氣耦接至板802。在進一步實現例中,通訊晶片806為處理器804之一部分。
此等其他組件包括但不限於依電性記憶體(例如,DRAM)、非依電性記憶體(例如,ROM)、快閃記憶體、圖形處理器、數位信號處理器、密碼處理器、晶片組、天線、顯示器、觸控螢幕顯示器、觸控螢幕控制器、電池、音訊編解碼器、視訊編解碼器、功率放大器、全球定位系統(GPS)裝置、羅盤、加速度計、陀螺儀、揚聲器、攝影機,及大容量儲存裝置(諸如,硬碟機、光碟(CD)、數位通用光碟(DVD)等)。
通訊晶片806致能用於將資料傳送至運算裝置800以及自運算裝置800傳送資料的無線通訊。術語「無線」及其衍生詞可用以描述電路、裝置、系統、方法、技術、通訊通道等,其可經由非固態媒體經由使用經調變電磁輻射而傳達資料。此術語並不暗示相關聯裝置不含有任何導線,儘管在一些實施例中此等裝置可能不含有導線。通訊晶片806可實現若干無線標準或協定的任一個,包括但不限於Wi - Fi (IEEE 802.11家族)、WiMAX (IEEE 802.16系列)、IEEE 802.20長期演進技術(LTE)、Ev - DO、HSPA +、HSDPA +、HSUPA +、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍牙、其衍生物、以及標定為3G、4G、5G及更高之任何其他無線協定。運算裝置800可包括複數個通訊晶片806。舉例來說,第一通訊晶片806可專用於諸如Wi-Fi及藍芽之較短範圍無線通訊,且第二通訊晶片806可專用於諸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO及其他的較長範圍無線通訊。
運算裝置800的處理器804包括封裝在處理器804內的一積體電路晶粒。在本發明的一些實現例中,根據本文所描述的實施例,處理器的積體電路晶粒可封裝於一電子系統中,電子系統包含具有以面對面組態的第一晶粒及第二晶粒之封裝基體。術語「處理器」可指處理來自暫存器及/或記憶體之電子資料以將電子資料變換成可儲存在暫存器及/或記憶體中之其他電子資料的任何裝置或裝置之部分。
通訊晶片806亦包括封裝於通訊晶片806內之積體電路晶粒。根據本發明的另一實現例,根據本文所述之實施例通訊晶片的積體電路晶粒可封裝在一電子系統中,此電子系統包含具有以面對面組態的第一晶粒及第二晶粒之封裝體基體。
本發明之所例示之實現例的上述描述,包括在摘要中所描述的內容,並不旨在窮舉或把本發明限制於所揭示之精確形式。雖然為了例示的目的在本文描述了本發明的具體實現例及範例,但是如相關領域的習知技藝者將體認到的,在本發明範圍內的各種等效修改是有可能的。
有鑑於上述的詳細描述可對本發明進行這些修改。下列申請專利範圍中所用之術語不應被解釋為將本發明限制於本說明書及申請專利範圍中所揭示之特定實現例。相反的是,本發明之範疇應完全由以下申請專利範圍來判定,申請專利範圍將根據申請專利範圍解釋之已確立原則來解釋。
範例1:一電子封裝體,其包含:一模層,其具有一第一表面及與第一表面相對之一第二表面;嵌入模層中的複數個第一晶粒,其中複數個第一晶粒中的每一者具有一與模層的第一表面實質上共平面的表面;以及嵌入模層中的一第二晶粒,其中第二晶粒係設置於複數個第一晶粒與模層的第二表面之間。
範例2:範例1之電子封裝體,其中複數個第一晶粒以第一層級互連件(FLI)電氣耦接至第二晶粒。
範例3:範例1或範例2之電子封裝體,其中複數個第一晶粒之主動表面經定向為面向第二晶粒之一主動表面。
範例4:範例1至3之電子封裝體,其中複數個第一晶粒包含在第一處理節點處所製造之晶粒,且其中第二晶粒在較第一處理節點不高階之第二處理節點製造。
範例5:範例1至4之電子封裝體,其進一步包含:嵌入模層中的複數個高速輸入/輸出(HSIO)晶粒。
範例6:範例1至5之電子封裝體,其中複數個HSIO晶粒係電氣耦接至第二晶粒。
範例7:範例1至6之電子封裝體,其中複數HSIO晶粒的每一者具有與模層之第一表面實質上共平面的一表面。
範例8:範例1至7之電子封裝體,其進一步包含:複數個第二晶粒。
範例9:如範例1至8中任一項之電子封裝體,其中複數個第二晶粒係藉由嵌入模層中的一橋接件而彼此電氣耦接。
範例10:範例1至9之電子封裝體,其中複數個第二晶粒係設置於橋接件與複數個第一晶粒之間。
範例11:範例1至10之電子封裝體,其進一步地包含:自模層的第二表面延伸的中層級互連件(MLIs)。
範例12:如範例1至11之電子封裝體,其中MLIs藉由嵌入模層中的導電柱及襯墊而電氣耦接至複數個第一晶粒及第二晶粒。
範例13:一電子封裝體,其包含:一模層,其具有一第一表面及與第一表面相對之一第二表面;嵌入模層中的複數個第一晶粒;嵌入模層中的一第二晶粒,其中第二晶粒係設置於複數個第一晶粒與模層的第二表面之間;以及在複數個第一晶粒與第二晶粒之間的一阻焊層。
範例14:如範例13所述之電子封裝體,其中複數個第一晶粒之每一者係整個嵌入模層中。
範例15:範例13或範例14之電子封裝體,其進一步包含:電氣耦接至第二晶粒的複數個高速輸入/輸出(HSIO)晶粒。
範例16:範例13至15之電子封裝體,其中複數個HSIO晶粒具有第一厚度且複數個第一晶粒具有不同於第一厚度之第二厚度。
範例17:範例13至16之電子封裝體,其中複數個第一晶粒在第一處理節點處製造,且其中第二晶粒在較第一處理節點不高階之第二處理節點製造。
範例18:範例13至17中任一例之電子封裝體,其進一步包含:複數個第二晶粒,其中第二晶粒中之每一者係藉由嵌入模層中的一或更多個橋接件而彼此電氣耦接。
範例19:一製造一電子封裝體之方法,其包含:在一載體上放置多個第一晶粒;將一第一模層設置在複數個第一晶粒上方,其中第一晶粒的接觸襯墊係露出;以第一層級互連件(FLIs)將一第二晶粒附接至複數個第一晶粒;以及配置一第二模層於第二晶粒上方。
範例20:範例19之方法,其中第一晶粒係以晶粒安裝器放置在載體上,且其中第二晶粒以一熱壓接合(TCB)工具附接至複數個第一晶粒。
範例21:範例19或範例20之方法,其進一步包含:製作在第二晶粒上面的一重新分配層;在重新分配層之上設置一阻焊劑;在阻焊劑中形成開口;在開口中設置中層級互連件(MLIs);以及移除載體。
範例22:一電子系統,其包含:一板;一多晶粒封裝體,其耦接至板,其中多晶粒封裝體包含:一模層,其具有一第一表面及一第二表面;複數個第一晶粒,其中複數個第一晶粒係嵌入模層中;以及與複數個第一晶粒耦接之一第二晶粒,其中第一晶粒之主動表面面向第二晶粒之一主動表面,其中第二晶粒係嵌入模層中,且其中第二晶粒係介於第一晶粒之主動表面與模層的第二表面之間。
範例23:範例22之電子系統,其中複數個第一晶粒為第一處理節點晶粒,且其中第二晶粒為第二處理節點晶粒,其中第一處理節點較第二處理節點更高階。
範例24:範例23之電子系統,其進一步包含:嵌入模層中的複數個高速輸入/輸出(HSIO)晶粒。
範例25:範例23或範例24之電子系統,其中複數個HSIO晶粒係電氣耦接至第二晶粒。
100,101,200,201,300,500,601,700:電子封裝體
106,114,206,214,306,314,406,414,506,514,606,614:主動表面
107,207,307,407,507,607,707:第一晶粒
108,113,115,213,215,308,313,315,408,413,415,508,513,515,608,613,615,619:背側表面
109,209:第一表面
110,110A
,110B
,210,210A
,210B
,310,410,410A
,410B
,510,610,610A
,610B
,710:第二晶粒
111,211,311,411,511,611:底部填充材料
112,212,312,412,512,612:HSIO晶粒
117,119,125,217,219,225,231,317,319,325,417,419,425,431,517,519,525,574,619,625,631:襯墊
118,218,318,418,518,618:第一層級互連件(FLIs)
120,220,320,420,520,620:模層
122,222,422,642:阻焊劑
124,224,246,324,424,524,546,624,646:通孔
127,227:第二表面
128,228,328,428,528,628,728:中層級互連件(MLIs)
208,309,327,409,427,509,609,627:表面
230,430,630,730:橋接件
242,322,522,542:阻焊層
323,543:開口
370,470:載體
371,471:釋放層
401:電子封裝體、封裝體
537:晶種層
570:第一載體
580,680:第二載體
750:電子系統
790,802:板
800:運算裝置
804:處理器
806:通訊晶片
圖1A係根據一實施例一多晶粒封裝體的截面圖,其包括以面對面組態耦接至一第二晶粒的複數個第一晶粒。
圖1B係根據一實施例一多晶粒封裝體的截面圖,其包括以面對面組態耦接至複數個第二晶粒的複數個第一晶粒,其中第二晶粒藉由一嵌入式橋接件耦接在一起。
圖2A係根據一實施例一多晶粒封裝體的截面圖,其包括以介於複數個第一晶粒與第二晶粒之間的一阻焊層耦接至一第二晶粒的第一晶粒。
圖2B係根據一實施例一多晶粒封裝體的截面圖,其包括以介於複數個第一晶粒與複數個第二晶粒之間的一阻焊層耦接至一第二晶粒的第一晶粒,其中第二晶粒藉由一嵌入式橋接件耦接在一起。
圖3A係根據一實施例安裝至載體基體之複數個第一晶粒的一截面圖。
圖3B係根據一實施例在模層安置於複數個第一晶粒上方之後的一截面圖。
圖3C係根據一實施例在柱形成於模層上之後的一截面圖。
圖3D係根據一實施例在一第二晶粒附接至第一晶粒之後的一截面圖。
圖3E係根據一實施例在模層安置於第二晶粒上方之後的一截面圖。
圖3F係根據一實施例在柱形成於模層上之後的一截面圖。
圖3G係根據一實施例在重新分配層(RDL)形成於模層上之後的一截面圖。
圖3H係根據一實施例在阻焊層安置於RDL上方及圖案化之後的一截面圖。
圖3I係根據一實施例在中層級互連件(MLIs)係被安置穿過阻焊層之後的一截面圖。
圖3J係根據一實施例在載體被移除之後的一截面圖。
圖4A係根據一實施例在複數個第二晶粒附接至複數個第一晶粒之後的電子封裝體的一截面圖。
圖4B係根據一實施例在模層安置於第二晶粒上方之後的一截面圖。
圖4C係根據一實施例在一橋接件橫跨第二晶粒被附接之後的一截面圖。
圖4D係根據一實施例在模層及RDLs形成於第二晶粒上方之後的一截面圖。
圖4E係根據一實施例在載體被移除之後的一截面圖。
圖5A係根據一實施例具有晶種層之第一載體的一截面圖。
圖5B係根據一實施例在阻焊層安置於晶種層上方及圖案化之後的一截面圖。
圖5C係根據一實施例在互連件安置於阻焊劑開口中之後的一截面圖。
圖5D係根據一實施例在第一晶粒附接至互連件之後的一截面圖。
圖5E係根據一實施例在第一載體被移除且第二載體附接至封裝體之後的一截面圖。
圖5F係根據一實施例在一第二晶粒附接至第一晶粒之後的一截面圖。
圖5G係根據一實施例在RDLs形成在第二晶粒上且第二載體被移除之後的一截面圖。
圖6A係根據一實施例之具有附接至複數個第一晶粒的複數個第二晶粒電子之封裝體的一截面圖。
圖6B係根據一實施例在一橋接件橫跨第二晶粒被附接之後的一截面圖。
圖6C係根據一實施例在RDLs形成在第二晶粒上且第二載體被移除之後的一截面圖。
圖7係根據一實施例包含一多晶片封裝體的電子系統的一截面圖。
圖8係根據一實施例建立之一運算裝置的示意圖。
100:電子封裝體
106,114:主動表面
107:第一晶粒
108,113,115:背側表面
109:第一表面
110:第二晶粒
111:底部填充材料
112:HSIO晶粒
117,119:襯墊
118:第一層級互連件(FLIs)
120:模層
122:阻焊劑
124:通孔
125:襯墊
127:第二表面
128:中層級互連件(MLIs)
Claims (20)
- 一種多晶粒電子封裝體,其包含: 在一第一模層中的一第一晶粒,該第一晶粒包含互連件,該第一晶粒具有一主動表面,且該第一晶粒具有複數個通過基體通孔; 在該第一模層中的第一複數個通孔,該等第一複數個通孔橫向鄰接於該第一晶粒的一第一側,該等第一複數個通孔之每一者自該第一模層的一頂表面延伸至該第一模層的一底表面; 在該第一模層中的第二複數個通孔,該等第二複數個通孔橫向鄰接於該第一晶粒的一第二側,該等第二複數個通孔之每一者自該第一模層的該頂表面延伸至該第一模層的該底表面; 一第二晶粒,其電氣耦接至該第一晶粒,且該第二晶粒電氣耦接至該等第一複數個通孔; 一第三晶粒,其電氣耦接至該第一晶粒,該第三晶粒藉由該第一晶粒之該等互連件而電氣耦接至該第二晶粒;以及 一第二模層,其介於該第二晶粒及該第三晶粒之間且與該第二晶粒及該第三晶粒接觸。
- 如請求項1的多晶粒電子封裝體,其中該第二模層係進一步沿著該第二晶粒及該第三晶粒的最外側。
- 如請求項1的多晶粒電子封裝體,其中該第二模層具有一個與該第二晶粒的一上表面共平面之上表面。
- 如請求項1的多晶粒電子封裝體,其中該第二模層係進一步介於該第二晶粒及該第一晶粒之間並且介於該第三晶粒及該第一晶粒之間。
- 如請求項1的多晶粒電子封裝體,其中該第二模層的該上表面係與該第三晶粒的一上表面共平面。
- 如請求項1之多晶粒電子封裝體,其中該第二晶粒係藉由直接介於該第三晶粒及該第二晶粒之間的一電氣路徑來電氣耦接至該第三晶粒。
- 如請求項1之多晶粒電子封裝體,其中該第三晶粒係與該第二晶粒共平面。
- 如請求項1之多晶粒電子封裝體,其進一步包含: 一第四晶粒,其介於該第二晶粒及該第三晶粒之間,該第四晶粒耦接至該第一晶粒。
- 如請求項1之多晶粒電子封裝體,其進一步包含: 垂直地位在該第一晶粒之下的複數個中層級互連件。
- 如請求項9之多晶粒電子封裝體,其進一步包含: 位在該第一晶粒之下的一阻焊劑,其中該等複數個中層級互連件係在該阻焊劑中。
- 一種多晶粒電子封裝體,其包含: 一第一晶粒,其包含互連件,該第一晶粒具有一頂表面、一底表面、一第一側及一第二側,該第二側與該第一側相對,且該第一晶粒具有複數個通過基體通孔; 一第一模層,其橫向鄰接於該第一晶粒,該第一模層與該第一晶粒之該第一側及該第二側直接接觸; 在該第一模層中且與該第一模層直接接觸的第一複數個通孔,該等第一複數個通孔橫向鄰接於該第一晶粒的該第一側,該等第一複數個通孔之每一者自該第一模層的一頂表面延伸至該第一模層的一底表面; 在該第一模層中且與該第一模層直接接觸的第二複數個通孔,該等第二複數個通孔橫向鄰接於該第一晶粒的該第二側,該等第二複數個通孔之每一者自該第一模層的該頂表面延伸至該第一模層的該底表面; 一第二晶粒,其電氣耦接至該第一晶粒,且該第二晶粒電氣耦接至該等第一複數個通孔; 一第三晶粒,其電氣耦接至該第一晶粒,該第三晶粒藉由該第一晶粒之該等互連件而電氣耦接至該第二晶粒;以及 一第二模層,其介於該第二晶粒及該第三晶粒之間且與該第二晶粒及該第三晶粒接觸。
- 如請求項11之多晶粒電子封裝體,其中該第一晶粒具有一主動表面。
- 如請求項11之多晶粒電子封裝體,其中該第二模層係與該第二晶粒及該第三晶粒的最外側直接接觸。
- 如請求項11之多晶粒電子封裝體,其中該第二晶粒具有在一主動側上方之一背側,且其中該第二模層不位於該第二晶粒之該背側上。
- 如請求項14之多晶粒電子封裝體,其中該第三晶粒具有在一主動側上方之一背側,且其中該第二模層不位於該第三晶粒之該背側上。
- 如請求項11之多晶粒電子封裝體,其中該第二晶粒係藉由在該第一晶粒中的一電氣路徑來電氣耦接至該第三晶粒。
- 如請求項11的多晶粒電子封裝體,其中該第二晶粒及該第三晶粒具有在該第一晶粒上方之一相同高度。
- 如請求項11之多晶粒電子封裝體,其進一步包含: 一第四晶粒,其介於該第二晶粒及該第三晶粒之中間。
- 如請求項11之多晶粒電子封裝體,其進一步包含: 複數個互連件,其垂直地位在該第一晶粒之下並且橫向地延伸超出該第一晶粒。
- 如請求項19之多晶粒電子封裝體,其中該等複數個互連件係在一阻焊劑中。
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2019
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- 2019-12-30 SG SG10202109182XA patent/SG10202109182XA/en unknown
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- 2020-01-09 TW TW111118269A patent/TW202236546A/zh unknown
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TW202236546A (zh) | 2022-09-16 |
EP3961701A1 (en) | 2022-03-02 |
TWI827782B (zh) | 2024-01-01 |
US11973041B2 (en) | 2024-04-30 |
US20220115334A1 (en) | 2022-04-14 |
SG10202109182XA (en) | 2021-09-29 |
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