TW202139479A - 包含金屬格柵之雷射剝離處理系統 - Google Patents
包含金屬格柵之雷射剝離處理系統 Download PDFInfo
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Abstract
本發明揭示一種製造一發光二極體(LED)裝置之方法,其包含藉由將複數個半導體層沈積於一透明基板上而形成一LED結構。將經開溝槽金屬放置於該複數個半導體層中,其中該經開溝槽金屬接觸該透明基板。運用在其間界定一腔體之電互連將該LED結構附接至一CMOS結構。使用雷射光來提供該透明基板從該複數個半導體層之雷射剝離。
Description
本發明大體上係關於將一藍寶石或其他基板與附接至CMOS基板之一半導體LED分離。
包含可穿戴裝置、頭戴式顯示器及大面積顯示器之各種新興顯示應用需要由具有一高密度且具有低至小於100 μm × 100 μm之一橫向尺寸之微型LED (μLED或uLED)陣列組成之微型晶片。微型LED (uLED)通常具有約50 μm之直徑或寬度尺寸及更小尺寸,該等尺寸用於藉由緊密近接地對準包括紅色、藍色及綠色波長之微型LED而製造彩色顯示器。通常,已利用兩種方法來組裝由個別微型LED晶粒構造之顯示器。第一方法係一取置方法,其包括拾取各個別藍色、綠色及紅色波長微型LED及接著將其等對準且附接至一背板上,接著進行將該背板電連接至一驅動器積體電路。歸因於各微型LED之小尺寸,此組裝序列係緩慢的且經受製造錯誤。此外,隨著晶粒尺寸減小以滿足顯示器之不斷提高解析度要求,必須在各取置操作轉移愈來愈多晶粒以填入所需尺寸之一顯示器。
藉由晶圓級製造提供半導體發光裝置(LED)或微型LED之取置製造之一替代例。一CMOS晶粒上之控制電子器件可藉由焊料、導電柱或其他適合互連直接附接至一LED晶圓。不幸地,與單獨處理LED晶粒或晶圓相比,處理LED及CMOS連接晶粒及晶圓可為困難的。必須在破壞CMOS晶粒完整性及功能性之情況下才能夠執行諸如藍寶石基板移除、鎵清潔及磷光體附接之複雜處理步驟。
涉及將一雷射光源投射穿過一透明材料以被吸收於背側上之一鄰近材料中之雷射剝離程序係一特定關注問題。一透明基板(例如,藍寶石)與一吸收材料(例如,GaN)之間之介面處之受限電漿導致材料之剝離或分離。不幸地,與CMOS晶粒附接相關聯之塗層及處理步驟可干擾剝離。舉例而言,一CMOS晶粒或晶圓與一LED晶粒或晶圓之間之底膠塗層可包含透明基板之多餘塗層,其防止剝離,除非首先部分移除底膠。
在一項實施例中,一種製造一發光二極體(LED)裝置之方法包含藉由將複數個半導體層沈積於一透明基板上而形成一LED結構。將經開溝槽金屬放置於複數個半導體層中,其中該經開溝槽金屬接觸透明基板。LED結構運用在其間界定一腔體之電互連附接至一CMOS結構。使用雷射光來提供透明基板從複數個半導體層之雷射剝離。
在一些實施例中,可將一底膠材料沈積於腔體中。
在一些實施例中,經開溝槽金屬經配置以界定一經開溝槽格柵。
在一些實施例中,透明基板係藍寶石。
在一些實施例中,電互連係導電柱。
在一些實施例中,複數個半導體層係GaN。
在一些實施例中,製造一發光二極體(LED)裝置之方法包含運用在其間界定一腔體之電互連將包含複數個半導體層內之經開溝槽金屬之一LED結構附接至一CMOS結構。引導雷射光以提供透明基板從複數個半導體層之雷射剝離。
在描述本發明之數項例示性實施例之前,應瞭解,本發明不限於在以下描述中闡述之構造或處理步驟之細節。本發明可有其他實施例且能夠以各種方式實踐或實行。
如本文中根據一或多項實施例使用之術語「基板」係指具有一程序在其上起作用之一表面或一表面之部分之一中間或最終結構。另外,在一些實施例中對一基板之引用亦係指僅基板之一部分,除非上下文另有明確指示。此外,對沈積於根據一些實施例之一基板上之引用包含沈積於一裸露基板上,或沈積於具有沈積或形成於其上之一或多個膜或特徵或材料之一基板上。
在一或多項實施例中,「基板」意謂形成於一基板上之任何基板或材料表面,在一製程期間對其執行膜處理。在例示性實施例中,對其執行處理之一基板表面取決於應用而包含材料,諸如矽、氧化矽、絕緣體上矽(SOI)、應變矽、非晶矽、摻雜矽、摻雜碳之氧化矽、鍺、砷化鎵、玻璃、藍寶石、及任何其他適合材料,諸如金屬、金屬氮化物、III族氮化物(例如,GaN、AlN、InN及合金)、金屬合金及其他導電材料。基板包含(無限制)發光二極體(LED)裝置。在一些實施例中,基板曝露於一預處理程序以拋光、蝕刻、還原、氧化、羥化、退火、UV固化、電子束固化及/或烘烤基板表面。除直接在基板本身之表面上進行膜處理以外,在一些實施例中,亦對形成於基板上之一底層執行所揭示之膜處理步驟之任一者,且術語「基板表面」意欲在上下文指示時包含此底層。因此,舉例而言,在一膜/層或部分膜/層已經沈積至一基板表面上之情況下,最近沈積膜/層之曝露表面即成為基板表面。
將在本發明中可交換地使用術語「晶圓」及「基板」。因此,如本文中使用,一晶圓充當用於形成本文中描述之LED裝置之基板。
圖1係用於製造附接至一CMOS晶粒或晶圓之一LED晶粒之一例示性程序流程100。在步驟102中,一LED晶粒或晶圓使用焊料、導電柱、導電黏著材料或對一LED晶圓之其他適合互連附接至一CMOS晶粒或晶圓。在LED晶粒或晶圓與所附接之CMOS晶粒或晶圓之間施用一底膠(步驟104)。可在一預雷射剝離(LLO)良率測試中測試各組合LED晶粒或晶圓及所附接之CMOS晶粒或晶圓之電連接能力及操作,其中標記無法操作晶粒以供稍後棄置(步驟106)。藉由雷射剝離移除透明藍寶石或其他LED基板材料(步驟108),其中經引導雷射能量加熱及蒸發諸如GaN之一吸收介面材料且允許分離。在一項實施例中,GaN氮化物經蒸發且分解成氮及金屬鎵。在步驟110中,可使用熱水(或弱酸)來移除且清潔鎵金屬,以洗去(或蝕除)鎵殘留物。可在一後雷射剝離(LLO)良率測試中測試各組合LED晶粒或晶圓及所附接之CMOS晶粒或晶圓之電連接能力及操作,其中標記無法操作晶粒以供稍後棄置(步驟112)。在步驟114中,磷光體可附接至LED,且再次測試電連接能力及操作(步驟116)。在一最後步驟118中,可切割一晶圓(若必要),且封裝組合CMOS晶粒及LED。
圖2A繪示包含在底膠填充之前附接至一CMOS晶粒或晶圓210之一LED晶粒或晶圓202之一結構200。LED晶粒或晶圓202包含一藍寶石240或其他透明基板,其具有包含能夠在通電時發射光之一N型層、一作用層及一P型層之半導體層230。
在一或多項實施例中,透明基板包括藍寶石、碳化矽、矽(Si)、石英、氧化鎂(MgO)、氧化鋅(ZnO)、尖晶石及類似者之一或多者。在一或多項實施例中,在Epi層生長之前未圖案化基板。因此,在一些實施例中,基板未經圖案化且可被認為係平坦或實質上平坦的。在其他實施例中,基板經圖案化,例如,圖案化藍寶石基板(PSS)。
在一些實施例中,透明基板可支援一磊晶生長或沈積之半導體N層。接著,一半導體p層可循序地生長或沈積於N層上,從而在層之間之接面處形成一作用區。能夠形成高亮度發光裝置之半導體材料可包含(但不限於) III-V族半導體,尤其鎵、鋁、銦及氮之二元、三元及四元合金(亦稱為III族氮化物材料)。在一些實施例中,III族氮化物材料包括鎵(Ga)、鋁(Al)及銦(In)之一或多者。因此,在一些實施例中,半導體層包括氮化鎵(GaN)、氮化鋁(AlN)、氮化銦(InN)、氮化鎵鋁(GaAlN)、氮化鎵銦(GaInN)、氮化鋁鎵(AlGaN)、氮化鋁銦(AlInN)、氮化銦鎵(InGaN)、氮化銦鋁(InAlN)及類似者之一或多者。在一或多項特定實施例中,半導體層104包括氮化鎵且係一n型層。
可藉由導電柱222提供CMOS晶片或晶圓210之間之電及機械連接。柱界定一腔體或間隙220,其可用一底膠材料填充以改良機械穩定性及附接,且亦改良電隔離。
圖2B繪示在適當位置具有底膠250之圖2B之結構200。在此實施例中,已從腔體220外部之區域移除底膠。在未移除或使用諸如關於圖3A及圖3B描述之其他技術之情況下,底膠通常將形成與藍寶石240之一側壁242接觸之一圓角(藉由虛線251表示)。不幸地,接觸且黏著地留存藍寶石側壁242之此一底膠圓角251可防止藍寶石240藉由雷射剝離移除或需要額外底膠移除步驟。
參考圖3A,附接至一CMOS晶粒或晶圓210之一LED晶粒(具有藍寶石基板240)之側壁242可視需要塗佈有一防黏塗層270。防黏塗層可為將藍寶石240浸入其中之一疏水性液體或其他防黏滯材料(例如,諸如液體鐵氟龍)。必須注意不允許防塗材料進入LED與CMOS之間之腔體中,此係因為毛細作用將吸收塗層且防止底膠在稍後處理步驟中黏附於腔體內。
圖3B繪示在用防黏塗層材料270選用塗佈藍寶石240及側壁242之後附接至一CMOS晶粒或晶圓之一LED晶粒。在放置於LED晶粒及晶圓與CMOS晶片或晶圓之間之腔體中時,底膠250可進一步包含一些多餘底膠材料252。此多餘材料252仍可接觸CMOS晶片或晶圓210但未定位於腔體內。然而,由於歸因於較早地施用防黏塗層材料270,其未接觸藍寶石240及側壁242,故不會干擾雷射剝離。
圖4以透視圖繪示允許從與LED晶粒且包含經開溝槽金屬格柵460之接觸雷射剝離移除藍寶石440之一結構400。結構400包含具有附接至一CMOS晶片或晶圓410之半導體層430之一LED晶粒。類似於關於圖2A及圖2B論述之實施例,藉由導電柱422提供CMOS晶片或晶圓410與半導體層430之間之電及機械連接。柱界定一腔體或間隙,其可用一底膠材料450填充以改良機械穩定性及附接,且亦改良電隔離。
在此實施例中,半導體層430包含一起形成一經開溝槽金屬格柵462之經開溝槽金屬460。實際上,溝槽可幫助界定複數個間隔台面,其等繼而界定像素,其中該複數個間隔台面之各者包括半導體層且該等間隔台面之各者具有小於或等於其等寬度之一高度。經開溝槽金屬460經沈積於複數個間隔台面之各者之間之一空間中,金屬在間隔台面之各者之間提供光學隔離且允許與GaN LED之側壁進行電接觸。在一項實施例中,電接觸可包含沿N型層之側壁電接觸間隔台面之各者之N型層。複數個間隔台面之各者之間之空間可導致從1 μm至100 μm之範圍中之一像素間距及在像素間距的範圍從10 um至100 um時小於像素間距之10%之p接觸層之鄰近邊緣之間之空間且在像素間距的範圍為1 um至10 um時,空間間隙小於或等於5 μm且大於0.5 μm。
在一些實施例中,經開溝槽金屬460包括一反射金屬。在一些實施例中,溝槽金屬寬度小於或等於4 μm且大於0.5 μm或小於或等於3 μm且大於0.5 μm。在一些實施例中,經開溝槽金屬格柵462之間之複數個間隔台面經配置成像素,且像素間距的範圍從5 μm至100 μm或從30 μm至50 μm。在一些實施例中,半導體層430具有從2 μm至10 μm之範圍中之一厚度。
由於經開溝槽金屬460附接於LED晶粒之藍寶石440與半導體層430之間,故藍寶石剝離需要斷開與金屬460之連接。在此實施例中,雷射光402分解GaN (或其他半導體材料430)以產生與藍寶石440分離。雖然雷射能量不夠高以至於無法導致金屬460之分解及直接釋放,但在GaN之面積足夠大於金屬460之面積之區中,來自GaN之分解之氮氣膨脹力導致金屬與藍寶石分離。
已詳細描述本發明,熟習此項技術者將瞭解,鑑於本發明,可對本發明進行修改而不脫離本文中描述之發明概念之精神。因此,本發明之範疇並不意欲限於所繪示及描述之特定實施例。
100:程序流程
102:步驟
104:步驟
106:步驟
108:步驟
110:步驟
112:步驟
114:步驟
116:步驟
118:步驟
200:結構
202:發光二極體(LED)晶粒或晶圓
210:CMOS晶粒或晶圓
220:腔體或間隙
222:導電柱
230:半導體層
240:藍寶石
242:側壁
250:底膠
251:圓角
252:多餘底膠材料
270:防黏塗層/防黏塗層材料
400:結構
402:雷射光
410:CMOS晶片或晶圓
422:導電柱
430:半導體層/半導體材料
440:藍寶石
450:底膠材料
460:經開溝槽金屬
462:經開溝槽金屬格柵
參考以下圖描述本發明之非限制及非詳盡實施例,其中相同元件符號貫穿各種圖指代相同部分,除非另有指定。
圖1係用於封裝附接至一CMOS晶粒或晶圓之一LED晶粒之一例示性程序流程;
圖2A繪示在底膠填充之前附接至一CMOS晶粒或晶圓之一LED晶粒;
圖2B繪示在底膠填充之後附接至一CMOS晶粒或晶圓之一LED晶粒;
圖3A繪示用一防黏塗層塗佈附接至一CMOS晶粒或晶圓之一LED晶粒;
圖3B繪示在底膠填充之後附接至一CMOS晶粒或晶圓之一LED晶粒;及
圖4以透視圖繪示從與LED晶粒且包含經開溝槽金屬格柵之接觸移除藍寶石。
為促進理解,在可能之情況下已使用相同元件符號來指定為圖所共用之相同元件。圖未按比例繪製。舉例而言,CMOS晶粒或晶圓之高度及寬度未按比例繪製。
100:程序流程
102:步驟
104:步驟
106:步驟
108:步驟
110:步驟
112:步驟
114:步驟
116:步驟
118:步驟
Claims (10)
- 一種製造一發光二極體(LED)裝置之方法,其包括: 藉由將複數個半導體層沈積於一透明基板上而形成一LED結構; 將經開溝槽金屬放置於該複數個半導體層中,其中該經開溝槽金屬接觸該透明基板,該經開溝槽金屬經配置以界定一經開溝槽格柵; 運用在其間界定一腔體之電互連將該LED結構附接至一CMOS結構; 引導雷射光以提供該透明基板從該複數個半導體層之雷射剝離。
- 如請求項1之製造一發光二極體(LED)裝置之方法,其進一步包括將一底膠材料沈積於該腔體中。
- 如請求項1之製造一發光二極體(LED)裝置之方法,其中該透明基板係藍寶石。
- 如請求項1之製造一發光二極體(LED)裝置之方法,其中該等電互連係導電柱。
- 如請求項1之製造一發光二極體(LED)裝置之方法,其進一步包括用防黏塗層來塗佈該透明基板之一側壁。
- 如請求項5之製造一發光二極體(LED)裝置之方法,其中將該透明基板浸入防黏材料中以塗佈該側壁。
- 一種製造一發光二極體(LED)裝置之方法,其包括: 運用在其間界定一腔體之電互連將包含複數個半導體層內之經開溝槽金屬之一LED結構附接至一CMOS結構,該複數個半導體層及經開溝槽金屬經配置成界定像素之一格柵;及 引導雷射光以提供該透明基板從該複數個半導體層之雷射剝離。
- 如請求項7之製造一發光二極體(LED)裝置之方法,其中該基板係藍寶石。
- 如請求項7之製造一發光二極體(LED)裝置之方法,其中該複數個半導體層係GaN。
- 如請求項7之製造一發光二極體(LED)裝置之方法,其中該等電互連係導電柱。
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