CN115210883A - 包括金属网格的激光剥离加工系统 - Google Patents
包括金属网格的激光剥离加工系统 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 24
- 229910052594 sapphire Inorganic materials 0.000 claims description 24
- 239000010980 sapphire Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 36
- 238000000034 method Methods 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种制造发光二极管(LED)器件的方法包括通过在透明衬底上沉积多个半导体层来形成LED结构。带沟槽的金属放置在多个半导体层中,其中带沟槽的金属接触透明衬底。LED结构利用电互连附接到CMOS结构,在所述电互连之间限定了腔。激光用于提供透明衬底从多个半导体层的激光剥离。
Description
技术领域
本发明总体上涉及将蓝宝石或其他衬底与附接到CMOS衬底的半导体LED分离。
背景技术
各种新兴显示器应用——包括可穿戴设备、头戴式显示器和大面积显示器——需要由高密度microLED(µLED或uLED)阵列组成的小型化芯片,其横向尺寸低至小于100µm×100µm。microLED(uLED)的直径或宽度通常为约50µm或更小,其用于通过紧密排列包含红色、蓝色和绿色波长的microLED来制造彩色显示器。一般地,两种方法已经被用于组装由单个microLED管芯构成的显示器。第一种是拾取和放置方法,其包括拾取每个单独的蓝色、绿色和红色波长microLED并且然后将每个单独的蓝色、绿色和红色波长microLED对准并附接到背板上,接着将背板电连接到驱动器集成电路。由于每个microLED的尺寸小,这种组装顺序是慢的,并且容易产生制造误差。此外,随着管芯尺寸的减小以满足显示器不断增加的分辨率要求,越来越多数量的管芯必须在每次拾取和放置操作中被转移以填充所需尺寸的显示器。
晶片规模制造提供了半导体发光器件(LED)或微型LED的拾取和放置制造的替代方案。CMOS管芯上的控制电子器件可以通过焊料、导电柱、或其他合适的互连直接附接到LED晶片。不幸的是,与单独加工LED管芯或晶片相比,加工LED和CMOS连接的管芯和晶片可以是困难的。诸如蓝宝石衬底去除、镓清洁和磷光体附接的复杂工艺步骤必须能够在损害CMOS管芯完整性和功能性的情况下进行。
激光剥离工艺——其涉及投射激光光源穿过透明材料,以被吸收在背侧上的相邻材料中——是一种特别值得关注的工艺(particular concern)。透明衬底(例如蓝宝石)和吸收材料(例如GaN)之间的界面处的受限等离子体导致材料的剥离或分离。不幸的是,与CMOS管芯附接相关联的涂层和加工步骤可以干扰剥离。例如,CMOS管芯或晶片和LED管芯或晶片之间的底部填充涂层可以包括透明衬底的不想要的涂层,这阻止了剥离,除非底部填充首先被部分去除。
发明内容
在一个实施例中,一种制造发光二极管(LED)器件的方法包括通过在透明衬底上沉积多个半导体层来形成LED结构。带沟槽的金属放置在多个半导体层中,其中带沟槽的金属接触透明衬底。LED结构利用电互连附接到CMOS结构,在所述电互连之间限定了腔。激光用于提供透明衬底从多个半导体层的激光剥离。
在一些实施例中,底部填充材料可以沉积在腔中。
在一些实施例中,带沟槽的金属被布置为限定带沟槽的网格。
在一些实施例中,透明衬底为蓝宝石。
在一些实施例中,电互连为导电柱。
在一些实施例中,多个半导体层为GaN。
在一些实施例中,制造发光二极管(LED)器件的方法包括利用电互连将LED结构——其包括多个半导体层内的带沟槽的金属——附接到CMOS结构,在所述电互连之间限定了腔。激光被引导以提供透明衬底从多个半导体层的激光剥离。
附图说明
本公开的非限制性和非穷尽性实施例参照以下附图进行描述,其中,除非另有说明,否则遍及各图类似的附图标记指代类似的部分。
图1为附接至CMOS管芯或晶片的LED管芯封装的示例工艺流程;
图2A示出了在底部填充之前附接到CMOS管芯或晶片的LED管芯;
图2B示出了在底部填充之后附接到CMOS管芯或晶片的LED管芯;
图3A示出了用抗粘涂层涂覆附接至CMOS管芯或晶片的LED管芯;
图3B示出了在底部填充之后附接到CMOS管芯或晶片的LED管芯;以及
图4以透视图示出了去除蓝宝石,以免与LED管芯和包括的带沟槽的金属网格接触。
为便于理解,在可能的场合,相同的附图标记已用于表示附图中公用的相同元件。附图不是按比例绘制的。例如,CMOS管芯或晶片的高度和宽度没有按比例绘制。
具体实施方式
在描述本公开的几个示例性实施例之前,应理解本公开不限于以下描述中阐述的构造或工艺步骤的细节。本公开能够有其他实施例,并且能够以各种方式实践或执行。
根据一个或多个实施例,如本文中使用的术语“衬底”是指一种中间的或最终的、具有表面或表面的一部分的、工艺在其上进行的结构。另外,在一些实施例中,提及衬底也是指衬底的仅一部分,除非上下文清楚地以其他方式指示。此外,根据一些实施例,提及在衬底上沉积包括在裸衬底上沉积,或者在其上沉积或形成有一个或多个膜或特征或材料的衬底上沉积。
在一个或多个实施例中,“衬底”意味着在制作工艺期间在其之上进行膜加工的任何衬底或衬底上形成的材料表面。在示例性实施例中,取决于应用,在其上进行加工的衬底表面包括诸如以下的材料:硅、氧化硅、绝缘体上硅(SOI)、应变硅、非晶硅、掺杂硅、掺杂碳的氧化硅、锗、砷化镓、玻璃、蓝宝石、和任何其他合适的材料(诸如金属、金属氮化物、III族-氮化物(例如GaN、AlN、InN、和合金)、金属合金、和其他导电材料)。衬底包括而不限于发光二极管(LED)器件。在一些实施例中,衬底暴露于预处理工艺以抛光、蚀刻、还原、氧化、羟基化、退火、UV固化、电子束固化、和/或烘焙衬底表面。除了直接在衬底本身的表面上的膜加工之外,在一些实施例中,所公开的膜加工步骤中的任何一个也在衬底上形成的底层上进行,并且术语“衬底表面”旨在包括如上下文指示的这种底层。因此,例如,在膜/层或部分膜/层已经沉积到衬底表面上的场合,新沉积的膜/层的暴露表面成为衬底表面。
在本公开中,术语“晶片”和“衬底”将可互换使用。因此,如本文所用,晶片用作形成本文所述LED器件的衬底。
图1是用于制造附接到CMOS管芯或晶片的LED管芯的示例工艺流程100。在步骤102中,使用焊料、导电柱、导电粘合材料、或对LED晶片的其他合适的互连,将LED管芯或晶片附接到CMOS管芯或晶片。在LED管芯或晶片和附接到的CMOS管芯或晶片之间施加底部填充(步骤104)。可以在预激光剥离(LLO)良率测试中测试每个组合的LED管芯或晶片和附接到的CMOS管芯或晶片的电连接和操作,其中不可操作的管芯被标记为稍后丢弃(步骤106)。通过激光剥离去除透明蓝宝石或其它LED衬底材料(步骤108),其中定向激光能量加热并蒸发吸收界面材料(诸如GaN)并允许分离。在一个实施例中,GaN被蒸发并分解成氮和金属镓。在步骤110中,可以使用热水(或弱酸)洗去(或蚀刻掉)镓残留物来去除和清洁镓金属。可以在激光剥离(LLO)后良率测试中测试每个组合的LED管芯或晶片和附接到的CMOS管芯或晶片的电连接和操作,其中不可操作的管芯被标记为稍后丢弃(步骤112)。在步骤114中,可以将磷光体附接到LED,并且再次测试电连接和操作(步骤116)。在最后的步骤118中,可以切割晶片(如果必要),并且封装组合的CMOS管芯和LED。
图2A示出了结构200,其包括在底部填充之前附接到CMOS管芯或晶片210的LED管芯或晶片202。LED管芯或晶片202包括蓝宝石240或具有半导体层230的其他透明衬底,该半导体层230包括n型层、有源层和p型层,当通电时其能够发射光。
在一个或多个实施例中,透明衬底包括蓝宝石、碳化硅、硅(Si)、石英、氧化镁(MgO)、氧化锌(ZnO)、尖晶石等中的一种或多种。在一个或多个实施例中,衬底在Epi层生长之前没有被图案化。因此,在一些实施例中,衬底没有被图案化,并且可以被认为是平坦的或基本平坦的。在其他实施例中,衬底被图案化,例如是图案化蓝宝石衬底(PSS)。
在一些实施例中,透明衬底可以支撑外延生长或沉积的半导体n层。然后,可以在n层上顺序生长或沉积半导体p层,在层间的结处形成有源区。能够形成高亮度发光器件的半导体材料可以包括但不限于III-V族半导体,特别是镓、铝、铟和氮的二元、三元和四元合金,也称为III族氮化物材料。在一些实施例中,III族氮化物材料包括镓(Ga)、铝(Al)和铟(In)中的一种或多种。因此,在一些实施例中,半导体层包括氮化镓(GaN)、氮化铝(AlN)、氮化铟(InN)、镓铝氮化物(GaAlN)、镓铟氮化物(GaInN)、铝镓氮化物(AlGaN)、铝铟氮化物(AlInN)、铟镓氮化物(InGaN)、铟铝氮化物(InAlN)等中的一种或多种。在一个或多个具体实施例中,半导体层104包括氮化镓,并且是n型层。
可以通过导电柱222提供CMOS芯片或晶片210之间的电气和机械连接。这些柱限定了腔或间隙220,可以用底部填充材料填充该腔或间隙220,以改善机械稳定性和附接,并且还改善电绝缘。
图2B示出了图2B的结构200,其中底部填充250就位。在该实施例中,已经从腔220外部的区域去除了底部填充。在不去除或使用诸如参照图3A和图3B描述的其它技术的情况下,底部填充通常会形成与蓝宝石240的侧壁242接触的圆角(fillet)(由虚线251表示)。不幸的是,这种接触并粘合保持蓝宝石侧壁242的底部填充圆角251可能阻止通过激光剥离去除蓝宝石240,或者需要附加的底部填充去除步骤。
参考图3A,附接到CMOS管芯或晶片210的LED管芯(具有蓝宝石衬底240)的侧壁242可以可选地涂覆有抗粘涂层270。抗粘涂层可以是蓝宝石240浸入其中的疏水性液体或其他抗粘着材料(例如,诸如液体Teflon)。必须小心不要允许抗粘涂层材料进入LED和CMOS之间的腔,因为毛细作用会吸收涂层并阻止底部填充在后面的加工步骤中粘附在腔内。
图3B示出了在可选地用抗粘涂层材料270涂覆蓝宝石240和侧壁242之后,附接到CMOS管芯或晶片的LED管芯。当置于LED管芯和晶片与CMOS芯片或晶片之间的腔中时,底部填充250可以进一步包括一些过量的底部填充材料252。这种过量的材料252仍然可以接触CMOS芯片或晶片210,但是不位于腔内。然而,由于抗粘涂层材料270的较早施加,其不接触蓝宝石240和侧壁242,因此不存在对激光剥离的干扰。
图4示出了结构400的透视图,该结构400允许激光剥离去除蓝宝石440,以免与LED管芯和包括的带沟槽的金属网格460接触。结构400包括具有附接到CMOS芯片或晶片410的半导体层430的LED管芯。类似于关于图2A和图2B讨论的实施例,CMOS芯片或晶片410和半导体层430之间的电气和机械连接由导电柱422提供。这些柱限定了腔或间隙,可以用底部填充材料450填充该腔或间隙,以改善机械稳定性和附接,并且还改善电绝缘。
在此实施例中,半导体层430包括带沟槽的金属460,一起形成带沟槽的金属网格462。实际上,沟槽可以帮助限定多个间隔开的台面,这些间隔开的台面进而限定像素,其中多个间隔开的台面中的每一个包括半导体层,并且每个间隔开的台面的高度小于或等于它们的宽度。带沟槽的金属460沉积在多个间隔开的台面的每一个之间的空间中,该金属既提供每个间隔开的台面之间的光学隔离,又允许与GaN LED的侧壁电接触。在一个实施例中,电接触可以包括沿着n型层的侧壁电接触每个间隔开的台面的n型层。当像素间距在从10μm到100μm的范围内时,多个间隔开的台面中的每一个之间的空间可以导致在从1μm到100μm的范围内的像素间距以及小于像素间距的10%的p接触层的相邻边缘之间的空间;并且当像素间距在从1μm到10μm的范围内时,空间间隙小于或等于5μm并且大于0.5μm。
在一些实施例中,带沟槽的金属460包括反射金属。在一些实施例中,沟槽金属宽度小于或等于4μm且大于0.5μm,或者小于或等于3μm且大于0.5μm。在一些实施例中,带沟槽的金属网格462之间的多个间隔开的台面被布置成像素,并且像素间距的范围从5μm到100μm或从30μm到50μm。在一些实施例中,半导体层430的厚度在从2μm到10μm的范围内。
由于带沟槽的金属460附接在LED管芯的蓝宝石440和半导体层430之间,因此蓝宝石剥离需要断开与金属460的连接。在该实施例中,激光402分解GaN(或其他半导体材料430)以产生与蓝宝石440的分离。虽然激光能量没有高到足以导致金属460的分解和直接释放,但是在GaN的面积充分大于金属460的面积的区域中,来自GaN分解的氮气膨胀力导致金属与蓝宝石分离。
已详细描述了本发明,本领域技术人员将领会,给定本公开,可以对本发明进行修改,而不背离本文所述发明构思的精神。因此,意图是本发明的范围不局限于所示和所述的具体实施例。
Claims (10)
1.一种制造发光二极管(LED)器件的方法,包括:
通过在透明衬底上沉积多个半导体层来形成LED结构;
将带沟槽的金属放置在所述多个半导体层中,其中所述带沟槽的金属接触所述透明衬底,所述带沟槽的金属被布置成限定带沟槽的网格;
利用电互连将所述LED结构附接到CMOS结构,在所述电互连之间限定了腔;
引导激光以提供所述透明衬底从所述多个半导体层的激光剥离。
2.根据权利要求1所述的制造发光二极管(LED)器件的方法,还包括在所述腔中沉积底部填充材料。
3.根据权利要求1所述的制造发光二极管(LED)器件的方法,其中所述透明衬底是蓝宝石。
4.根据权利要求1所述的制造发光二极管(LED)器件的方法,其中所述电互连是导电柱。
5.根据权利要求1所述的制造发光二极管(LED)器件的方法,还包括用抗粘涂层涂覆所述透明衬底的侧壁。
6.根据权利要求5所述的制造发光二极管(LED)器件的方法,其中将所述透明衬底浸入抗粘材料中以涂覆所述侧壁。
7.一种制造发光二极管(LED)器件的方法,包括:
利用电互连将LED结构附接到CMOS结构,在所述电互连之间限定了腔,所述LED结构包括多个半导体层内的带沟槽的金属,所述多个半导体层和所述带沟槽的金属布置成限定像素的网格;以及
引导激光以提供透明衬底从所述多个半导体层的激光剥离。
8.根据权利要求7所述的制造发光二极管(LED)器件的方法,其中所述衬底是蓝宝石。
9.根据权利要求7所述的制造发光二极管(LED)器件的方法,其中所述多个半导体层是GaN。
10.根据权利要求7所述的制造发光二极管(LED)器件的方法,其中所述电互连是导电柱。
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