TW202135209A - 靜電夾頭之製造方法、靜電夾頭及基板處理裝置 - Google Patents
靜電夾頭之製造方法、靜電夾頭及基板處理裝置 Download PDFInfo
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Abstract
本發明提供一種能夠防止異常放電之靜電夾頭。
本發明提供一種靜電夾頭之製造方法,其具有如下步驟:準備形成有第1孔之第1陶瓷板之步驟;準備形成有第2孔之第2陶瓷板之步驟,且該第2孔形成於在水平方向上不同於上述第1孔之位置;於上述第1陶瓷板或上述第2陶瓷板上,藉由漿料形成具備連接上述第1孔與上述第2孔之流路的漿料層之步驟;使上述第1陶瓷板與上述第2陶瓷板介隔上述漿料層積層之步驟;及使介隔上述漿料層積層之上述第1陶瓷板與上述第2陶瓷板接合之步驟。
Description
本發明係關於一種靜電夾頭之製造方法、靜電夾頭及基板處理裝置。
於半導體製造步驟中,為了提昇基板與靜電夾頭之間之傳熱性,已知自設置於靜電夾頭之貫通孔向基板與靜電夾頭之間之微小空間供給傳熱氣體(例如,專利文獻1)。
又,專利文獻2中提出了一種靜電夾頭,其具備:基體,其含有陶瓷,且於上表面具有保持面,並且於內部具有熱媒之流路;及被覆膜,其被覆於流路之內表面。該被覆膜含有陶瓷,該陶瓷硬於基體之陶瓷。
[先前技術文獻]
[專利文獻]
[專利文獻1]國際公開第2003/046969號說明書
[專利文獻2]國際公開第2014/098224號說明書
[發明所欲解決之問題]
本發明提供一種能夠防止異常放電之靜電夾頭之製造方法、靜電夾頭及基板處理裝置。
[解決問題之技術方法]
根據本發明之一態樣,提供一種靜電夾頭之製造方法,其具有如下步驟:準備形成有第1孔之第1陶瓷板之步驟;準備形成有第2孔之第2陶瓷板之步驟,且該第2孔形成於在水平方向上不同於上述第1孔之位置;於上述第1陶瓷板或上述第2陶瓷板上,藉由漿料形成具備連接上述第1孔與上述第2孔之流路的漿料層之步驟;使上述第1陶瓷板與上述第2陶瓷板介隔上述漿料層積層之步驟;及使介隔上述漿料層積層之上述第1陶瓷板與上述第2陶瓷板接合之步驟。
[發明之效果]
根據一態樣,可提供一種能夠防止異常放電之靜電夾頭之製造方法、靜電夾頭及基板處理裝置。
以下,參照圖式,對用於實施本發明之形態進行說明。各圖式中,同一構成部分附上同一符號,有時省略重複之說明。
[基板處理裝置]
使用圖1,對一實施方式之基板處理裝置1進行說明。圖1係表示一實施方式之基板處理裝置1之一例的剖面模式圖。基板處理裝置1具備處理容器10。處理容器10中之內部提供處理空間10s。處理容器10包含本體12。本體12具有大致圓筒形狀。本體12例如由鋁所形成。於本體12之內壁面上設置有具有耐腐蝕性之膜。該膜可為氧化鋁、氧化釔等陶瓷。
於本體12之側壁形成有通路12p。基板W通過通路12p於處理空間10s與處理容器10之外部之間被搬送。通路12p藉由沿著本體12之側壁設置之閘閥12g打開及關閉。
於本體12之底部設置有支持部13。支持部13由絕緣材料所形成。支持部13具有大致圓筒形狀。支持部13於處理空間10s之中自本體12之底部向上方延在。支持部13中之上部具有載置台14。載置台14構成為於處理空間10s中支持基板W。
載置台14具有基台18及靜電夾頭20。載置台14可進而具有電極板16。電極板16由鋁等導體所形成,具有大致圓盤形狀。基台18設置於電極板16上。基台18由鋁等導體所形成,具有大致圓盤形狀。基台18電性地連接於電極板16。
於基台18之載置面上載置有靜電夾頭20,於靜電夾頭20所具備之載置面20a上載置有基板W。靜電夾頭20之本體具有大致圓盤形狀。靜電夾頭20由陶瓷等介電體所形成。
靜電夾頭20中,以平行於載置面20a之方式嵌入有電極20b。電極20b係膜狀電極。電極20b經由未圖示之開關連接於直流電源51。若自直流電源51向電極20b施加直流電壓,則於靜電夾頭20與基板W之間產生靜電引力。藉由該靜電引力使得基板W被靜電夾頭20保持。
靜電夾頭20中,於基板之周圍具有階差部,且於階差部之上表面配置有邊緣環25。邊緣環25提昇針對基板W所實施之電漿處理之面內均勻性。邊緣環25可由矽、碳化矽、或石英等所形成。邊緣環25係位於基板之周圍之環構件之一例,亦稱為聚焦環。
於靜電夾頭20之內部、即載置面20a與電極20b之間形成有流路22a。於載置面20a上形成有第1孔21a。又,於靜電夾頭20之下表面20c上形成有第2孔23a。第1孔21a與第2孔23a經由流路22a相連接。第2孔23a經由貫通基台18及電極板16之氣體供給管線24而連接於氣體源52。氣體源52供給傳熱氣體(例如,氦氣)。傳熱氣體通過氣體供給管線24、第2孔23a、流路22a及第1孔21a,被供給至靜電夾頭20之載置面20a與基板W之背面之間。
於基台18上形成流路19a,流路19a之內部供冷媒等調溫介質流通。調溫介質自冷卻器單元26通過入口配管19b,流經流路19a,通過出口配管19c後返回至冷卻器單元26中。藉此,藉由控制傳熱氣體及調溫介質,從而調整載置於靜電夾頭20上之基板W之溫度。
基板處理裝置1具備:第1高頻電源62及第2高頻電源64。第1高頻電源62供給適合於電漿之生成的第1高頻之高頻電力。第1高頻例如可為27 MHz~100 MHz之範圍內之高頻。第1高頻電源62經由匹配器66連接於電極板16。匹配器66使第1高頻電源62之輸出阻抗與負載側(電漿側)之阻抗匹配。再者,第1高頻電源62亦可經由匹配器66連接於上部電極30。第1高頻電源62構成電漿生成部之一例。
第2高頻電源64供給適合於離子饋入的第2高頻之高頻電力。第2高頻係不同於第1高頻之高頻,例如可為400 kHz~13.56 MHz之範圍內之高頻。第2高頻電源64經由匹配器68連接於電極板16。匹配器68使第2高頻電源64之輸出阻抗與負載側(電漿側)之阻抗匹配。
再者,亦可不使用第1高頻之高頻電力而是使用第2高頻之高頻電力來生成電漿。於該情形時,第2高頻亦可為大於13.56 MHz之高頻,例如40 MHz。於該情形時,基板處理裝置1亦可不具備第1高頻電源62及匹配器66。第2高頻電源64構成電漿生成部之一例。
上部電極30設置為與載置台14對向,且介隔絕緣構件32使處理容器10之本體12之上部開口封閉。上部電極30具有頂板34及支持體36。頂板34之下表面係處理空間10s側之下表面,其劃分形成處理空間10s。頂板34可由產生焦耳熱較少之低電阻之導電體或半導體所形成。頂板34具有複數個氣體出氣孔34a,該等氣體出氣孔34a在頂板34之板厚方向上貫通該頂板34。
支持體36支持頂板34且頂板34可自如裝卸。支持體36由鋁等導電性材料所形成。於支持體36之內部設置有氣體擴散室36a。支持體36具有自氣體擴散室36a向下方延伸之複數個氣體孔36b。複數個氣體孔36b分別連通於複數個氣體出氣孔34a。於支持體36上形成有氣體導入口36c。氣體導入口36c連接於氣體擴散室36a。於氣體導入口36c連接有氣體供給管38。
於氣體供給管38上連接有閥群42、流量控制器群44、及氣體源群40。氣體源群40、閥群42、及流量控制器群44構成氣體供給部。氣體源群40包含複數個氣體源。閥群42包含複數個開關閥。流量控制器群44包含複數個流量控制器。流量控制器群44之複數個流量控制器分別係質量流量控制器或壓力控制式流量控制器。氣體源群40之複數個氣體源分別經由與閥群42對應之開關閥、及與流量控制器群44對應之流量控制器而連接於氣體供給管38。
基板處理裝置1中,沿著本體12之內壁面及支持部13之外周設置有可自如裝卸之遮罩46。遮罩46防止反應副產物附著於本體12。遮罩46例如藉由於由鋁所形成之母材之表面形成具有耐腐蝕性之膜而構成。具有耐腐蝕性之膜可由氧化釔等陶瓷形成。
於支持部13與本體12之側壁之間設置有擋板48。擋板48例如藉由於由鋁所形成之母材之表面形成具有耐腐蝕性之膜(氧化釔等之膜)而構成。於擋板48上形成有複數個貫通孔。於擋板48之下方、且為本體12之底部設置有排氣口12e。排氣口12e經由排氣管53連接有排氣裝置50。排氣裝置50包含壓力調整閥及渦輪分子泵等真空泵。
於處理容器10內,處理氣體被供給至處理空間10s中。又,第1高頻及/或第2高頻之高頻電力施加於載置台14,藉此於上部電極30與基台18之間生成高頻電場,並藉由放電自氣體生成電漿。
基板處理裝置1可進而具備控制部80。控制部80可為具備處理器、記憶體等記憶部、輸入裝置、顯示裝置、信號之輸入輸出介面等的電腦。控制部80對基板處理裝置1之各部進行控制。控制部80中,操作員為了管理基板處理裝置1,可使用輸入裝置進行指令之輸入操作等。又,控制部80中,藉由顯示裝置能夠可視化地顯示基板處理裝置1之運轉情況。進而,記憶部中儲存有控制程式及製程配方資料。為了利用基板處理裝置1執行各種處理,藉由處理器執行控制程式。處理器執行控制程式,並依照製程配方資料對基板處理裝置1之各部進行控制。
[流路]
其次,參照圖2及圖3,對形成於靜電夾頭20內部之供傳熱氣體流通之流路22a進行說明。圖2係表示一實施方式之形成於靜電夾頭20之流路22a之一例的圖。圖3係表示圖2之A-A剖面之一例的圖。
圖2係俯視形成於靜電夾頭20內部之流路22a的圖。流路22a具有:流路22a1,其呈大致逆C字狀地形成於靜電夾頭20之內部;1條流路22a2,其自流路22a1朝內側分支;及6條流路22a3,其等自流路22a1朝外側分支。流路22a1係主流路之一例,流路22a3係副流路之一例。
第1孔21a於同心圓上形成有6個,並經由6條流路22a3連接於流路22a1。但,第1孔21a之個數並不限於此。第2孔23a形成於靜電夾頭20之大致中心位置,並經由流路22a2連接於流路22a1。第1孔21a之開口小於第2孔23a之開口。即,第1孔21a之開口面積小於第2孔23a之開口面積。第1孔21a及第2孔23a之形狀可為圓形,亦可為四邊形等多邊形。
根據後述之實施方式之靜電夾頭20之製造方法,如作為圖2之A-A剖面的圖3所示,靜電夾頭20具有:第1陶瓷板21,其具有第1孔21a;及第2陶瓷板23,其具有第2孔23a,且積層於第1陶瓷板21上。並且,於所積層之第1陶瓷板21與第2陶瓷板23之間,形成有具有連接第1孔21a與第2孔23a所需之高度的流路22a(流路22a1~流路22a3)。流路22a之高度形成為所需之高度。作為一例,流路22a之高度為5 μm~30 μm。
6個第1孔21a及第2孔23a形成於在俯視下不重疊之位置。即,第2孔23a形成於在水平方向上不同於6個第1孔21a之位置。又,實施方式之靜電夾頭20之製造方法中,可使流路22a之高度變小為5 μm~30 μm之範圍內。
回到圖2,作為主流路之一例的流路22a1之寬度寬於作為副流路之一例的流路22a3之寬度。流路22a1經由氣體供給管線24及流路22a2連接有氣體源52。藉此,使自氣體源52供給之傳熱氣體於寬於流路22a3之流路22a1之空間內擴散之後,向窄於流路22a1之流路22a3之空間內供給。藉此,可使傳熱氣體均勻地導入至靜電夾頭20之載置面20a與基板W之背面之間。
再者,圖3所示之形成有流路22a之漿料層22係如下述般製得:當製造靜電夾頭20時,將漿料塗佈於第1陶瓷板21與第2陶瓷板23之間。為了方便,圖3中,將漿料層22表示於第1陶瓷板21與第2陶瓷板23之間。但是,當製造靜電夾頭20時,若於使第1陶瓷板21與第2陶瓷板23介隔漿料層22積層之狀態下實施焙燒,則第1陶瓷板21與第2陶瓷板23接合,此時其等與漿料層22成為一體。即,藉由第1陶瓷板21、第2陶瓷板23及漿料層22形成單個陶瓷板28。因此,實施焙燒後之靜電夾頭20中,漿料層22並不是以層之形成存在,而是成為於陶瓷板28之內部形成有流路22a1之空間的狀態。
本實施方式之靜電夾頭20如下述般構成:被供給至形成於陶瓷板28之下表面之第2孔23a的傳熱氣體經由設置於陶瓷板28之內部的流路22a,自第1孔21a向基板W之背面供給。因此,相較於將設置於載置面20a上之傳熱氣體供給孔(第1孔21a)設為貫通陶瓷板28之貫通孔之情形而言,可縮短孔之縱向長度。藉此,使得第1孔21a內之電子之加速得到抑制,從而可抑制第1孔21a內之放電。
又,第1孔21a經由設置於陶瓷板28之內部之流路22a而設置。因此,可在不會受到設置於基台18之流路19a之形狀的制約之情況下設置第1孔21a。因此,容易設置複數個開口較小之第1孔21a。藉由使第1孔21a之開口變小,從而可減少載置面20a中針對基板W之溫度特異點,提昇溫度控制性。
又,第2孔23a形成於在水平方向上不同於第1孔21a之位置。即,第1孔21a與第2孔23a並未配置於直線上。因此,處理容器10內之清潔等過程中,當在無基板W之狀態下生成電漿時,可抑制電漿滲入至第2孔23a及氣體供給管線24中。因此,可於第2孔23a或氣體供給管線24之內部或壁面配置包含電漿耐性較低之材料的構件。
再者,圖3所示之一例中,電極20b設置於流路22a之下方,亦可形成於流路22a之上方。但,為了可更加縮短第1孔21a之縱向長度,電極20b較佳為設置於流路22a之下方。
[靜電夾頭之製造方法]
其次,參照圖4及圖5,對靜電夾頭20之製造方法之一例進行說明。圖4係表示一實施方式之靜電夾頭20之製造方法之一例的流程圖。圖5係用於對一實施方式之靜電夾頭20之製造方法之一例進行說明的圖。
開始圖4之處理,準備具有第1孔21a且經焙燒之第1陶瓷板21、及具有第2孔23a且經焙燒之第2陶瓷板23(步驟S1)。第1陶瓷板21及第2陶瓷板23較佳為氧化鋁(Al2
O3
)(以下,亦稱為「三氧化二鋁」)之燒結體、或添加有碳化矽(SiC)之三氧化二鋁之燒結體。第1陶瓷板21及第2陶瓷板23可為相同材料,亦可為不同材料。
例如,圖5(b)中示出了第1陶瓷板21及第2陶瓷板23之一例。第1陶瓷板21及第2陶瓷板23係具有同一直徑之大小相同之圓盤形狀的板狀構件。第1陶瓷板21預先被實施焙燒,而於第1陶瓷板21上形成有6個第1孔21a。同樣地,第2陶瓷板23預先被實施焙燒,而於第2陶瓷板23上形成有1個第2孔23a。
圖4之下一步驟中,藉由網版印刷於第2陶瓷板23之上形成具有流路22a之介電體的漿料層22(步驟S2)。藉此,如圖5(b)所示,於第2陶瓷板23上形成具有流路22a(流路22a1、22a2、22a3)之漿料層22。具體而言,遮住將成為流路22a1、22a2、22a3之部分,對除此以外之部分塗佈漿料22b。藉此,於第2陶瓷板23上形成漿料層22,該漿料層22中作為流路22a1、22a2、22a3之部分成為空間。
用於形成漿料層22而進行塗佈之漿料22b係將三氧化二鋁之粉末或添加有碳化矽之三氧化二鋁之粉末混合(分散)於溶劑中而成者,亦稱為糊劑。溶劑係氟系或酚系溶液,且該溶液中混合有三氧化二鋁之粉末等。再者,於步驟S2中,漿料層22亦可形成於第1陶瓷板21之面上。
圖4之下一步驟中,使第1陶瓷板21及第2陶瓷板23介隔漿料層22積層(步驟S3)。藉此,使得第1陶瓷板21及第2陶瓷板23隔著漿料層22積層。
圖4之下一步驟中,一面在垂直方向上施加壓力,一面實施焙燒,使介隔漿料層22積層之第1陶瓷板21及第2陶瓷板23接合(步驟S4),從而結束本處理。
上述靜電夾頭20之製造方法中,於使第1陶瓷板21與第2陶瓷板23介隔漿料層22積層之狀態下實施焙燒,從而使第1陶瓷板21與第2陶瓷板23接合。藉此,第1陶瓷板21、漿料層22、及第2陶瓷板23成為一體而成為陶瓷板28,漿料層22消失。其結果為,於成為一體之陶瓷板28之內部形成有流路22a。由於漿料層22係糊狀,因此流路22a可形成為5 μm~30 μm左右之高度。如此一來,由於可使流路22a之高度較小,因此可縮短第1孔21a之縱向長度。
圖5(a)係表示作為比較例之使用對漿料實施加壓形成而變硬之坯片之情形時的靜電夾頭之製造方法之一例的圖。
圖5(a)之例中,使成為上板之坯片121、形成有流路122a之坯片122、及成為下板之坯片123積層。並且,於積層之各坯片121、122、123之間塗佈漿料之後,實施焙燒。
由於圖5(a)所示之各坯片121、122、123還未實施焙燒,因此相較於實施焙燒後之第1陶瓷板21及第2陶瓷板23而言,更加柔軟。由此,於使用坯片之情形時,若如實施方式之靜電夾頭20之製造方法般一面進行加壓一面實施焙燒,則存在各坯片121、122、123發生變形之可能性。因此,較難對坯片一面進行加壓一面實施焙燒。又,由於形成有流路122a之坯片122獨立於其他坯片121、123,因此需具有某種程度之厚度,較難如本實施方式般形成5 μm~30 μm左右之流路122a。
與之相對,本實施方式之靜電夾頭20之製造方法中,在於第1陶瓷板21與第2陶瓷板23之間塗佈厚度約為5 μm~30 μm之漿料層22之後,實施焙燒。此時,第1陶瓷板21與第2陶瓷板23預先被實施焙燒,而相較於坯片而言強度更高。由此,當實施焙燒時,儘管向第1陶瓷板21與第2陶瓷板23施加壓力,亦不會發生變形,且當實施焙燒時可使第1陶瓷板21與第2陶瓷板23壓緊。
根據實施方式之靜電夾頭20之製造方法,可縮短第1孔21a之縱向長度。藉此,可防止於第1孔21a及其附近發生異常放電。
再者,電極20b可預先形成於圖4之步驟S1中所準備之第1陶瓷板21或第2陶瓷板23上,亦可於步驟S4中形成。當於步驟S4中形成電極20b時,於步驟S1中準備第3陶瓷板,第3陶瓷板中之與第2陶瓷板23之第2孔23a相同的位置上形成有孔。於第3陶瓷板之上塗佈導電性糊劑,並於步驟S3中將第2陶瓷板23積層於第3陶瓷板之上。於步驟S4中若實施焙燒,則可獲得於流路22a之下方具有電極20b之靜電夾頭20。當欲於流路22a之上方設置電極20b時,可準備於與第1陶瓷板21之第1孔21a相同的位置形成有孔之陶瓷板作為第3陶瓷板,並依據同樣之順序進行製作。但,由於第1孔21a之孔徑小於第2孔23a之孔徑,且第1孔21a之數量多於第2孔23a之數量,因此需要精密之對位。因此,較佳為於流路22a之下方形成電極20b。
[電極內之流路]
實施方式之靜電夾頭20之製造方法中,亦可於電極20b內形成流路。即,圖3所示之電極20b亦可由漿料層所形成。圖6係用於對一實施方式之靜電夾頭20之製造方法之另一例進行說明的圖。圖7係表示圖2之A-A剖面之另一例的圖。
此處,於第2陶瓷板23上形成圖6所示之導電體之漿料層20b1來代替圖5(b)所示之介電體之漿料層22。於該情形時,如作為圖2之A-A剖面之另一例的圖7所示,圖1所示之電極20b由導電體之漿料層20b1所形成,且於導電體之漿料層20b1之內部形成有流路22a。由於就流路22a具有流路22a1~22a3之方面而言,與圖5(b)所示之流路22a相同,因此,此處省略說明。再者,流路22a之形狀並不受圖5(b)及圖6所示之例所限定,只要係可連接第1孔21a與第2孔23a、且第1孔21a與第2孔23a形成於在水平方向上不同之位置,則可為任意構成。
用於形成作為圖7之電極20b的漿料層20b1而進行塗佈之漿料20b11(參照圖6)係將導電性粉末混合(分散)於溶劑中而成者。溶劑係氟系或酚系溶液,且該溶液中混合有導電性粉末。導電性粉末可為碳化鎢(WC)、碳化鉬(MoC)、碳化鉭(TaC)之任一種。
若導電體之漿料層20b1自第1陶瓷板21與第2陶瓷板23之間露出,則會使得導電體暴露於電漿中而成為造成處理容器10內之金屬污染的原因。因此,如圖6所示,將用於形成導電體之漿料層20b1的漿料20b11圓狀地塗佈於第2陶瓷板23上之內側,並且,與漿料20b11隔開間隙地於漿料20b11外周,以覆蓋漿料20b11之方式塗佈用於形成介電體之漿料層27b的漿料層27b1。導電體之漿料層20b1及介電體之漿料層27b之形成係藉由網版印刷實施。例如,亦可如下述般形成介電體之漿料層27b:遮住漿料層27b及間隙之部分而塗佈導電體之漿料20b11,其後,遮住導電體之漿料層20b1及間隙之部分而塗佈介電體之漿料27b1。
如此一來,於第1陶瓷板21與第2陶瓷板23之間,隔開間隙而形成具有厚度約為5 μm~30 μm之流路22a的作為導電層之漿料層20b1及作為介電體之漿料層27b。藉由設置間隙,從而可避免作為導電層之漿料層20b1與作為介電體之漿料層27b混合。於形成漿料層20b1及漿料層27b之後,使第1陶瓷板21、漿料層20b1及漿料層27b、以及第2陶瓷板23積層,一面進行加壓一面實施焙燒。此時,由於第1陶瓷板21與第2陶瓷板23預先被實施焙燒,因此具備某種程度之強度。由此,當實施焙燒時,儘管向第1陶瓷板21與第2陶瓷板23施加壓力,亦不會發生變形,可使第1陶瓷板21與第2陶瓷板23在垂直方向上壓緊。其結果為,第1陶瓷板21及第2陶瓷板23與漿料層20b1及漿料層27b成為一體,形成如圖7所示之電極20b及介電體層27。藉此,可於導電性構件(電極20b)之內部形成5 μm~30 μm左右之流路22a。於該情形時,流路22a亦連接第1孔21a與第2孔23a,可供傳熱氣體流通。又,藉由介電體層27覆蓋電極20b,從而可避免電極20b暴露於電漿中而發生金屬污染。
[多孔狀之流路]
實施方式之靜電夾頭20之製造方法中,亦可藉由利用以下之手法對漿料層22、漿料層20b1及漿料層27b實施焙燒,從而形成具有流路22a之多孔層。
例如,當實施焙燒時,若將溫度控制為固定之1200℃~1700℃,則漿料層難以成為多孔狀。與之相對,藉由將實施焙燒時之初始溫度控制在700℃~800℃,經過所需之時間之後,將其控制在1200℃~1700℃,從而可使漿料層形成為多孔狀。又,藉由改變漿料之粉末與溶劑之比率,從而可使漿料層形成為多孔狀,亦可改變多孔之氣孔率。
圖8係表示圖2之A-A剖面之另一例的圖。藉由形成具有流路22a之多孔層29,從而如圖8所示般陶瓷板28之側面之一部分成為多孔狀。若於流路22a內流通氦氣等傳熱氣體,則傳熱氣體自流路22a流向多孔層29之氣孔,且自陶瓷板28之側面洩漏。藉此,可抑制反應生成物附著於靜電夾頭20之側面。
[靜電夾頭之再製造]
其次,參照圖9,對進行再製造時之實施方式之靜電夾頭之製造方法進行說明。圖9係表示進行再製造時之實施方式之靜電夾頭之製造方法之一例的流程圖。
開始圖9之處理,切削第1陶瓷板21而使第2陶瓷板23露出(步驟S11)。接著,準備具有第1孔21a之新的第1陶瓷板21(步驟S12)。
接著,藉由網版印刷於第2陶瓷板23上形成具有連接第1孔21a與第2孔23a之流路22a的漿料層22(步驟S13)。漿料層22亦可形成於新的第1陶瓷板21上。
接著,使新的第1陶瓷板21與第2陶瓷板23介隔漿料層22積層(步驟S14)。接著,對漿料層22實施焙燒,而使新的第1陶瓷板21與第2陶瓷板23接合,再製造靜電夾頭20(步驟S15),從而結束本處理。
據此,藉由將暴露於電漿之第1陶瓷板21更換為新的第1陶瓷板21而執行實施方式之靜電夾頭之製造方法,從而可再製造能夠防止異常放電之靜電夾頭。
再者,本實施方式之靜電夾頭20之製造方法中所使用之漿料層並不限於將所需之粉末分散於氟系或酚系之溶液中而成者所。例如,本實施方式之靜電夾頭20之製造方法中所使用之漿料層亦可如下述般生成:將所需之粉末以預先規定好之量添加至溶液、燒結助劑、黏合劑中,並使其粉碎直至變為所需之粒徑。作為所添加之燒結助劑,可使用B4
C系、稀土類氧化物-Al2
O3
系燒結助劑。又,作為所添加之黏合劑,只要係合成樹脂即可。例如黏合劑可使用:松香酯、乙基纖維素、乙基羥乙基纖維素、丁醛樹脂、酚系樹脂、聚環氧乙烷系樹脂、聚(2-乙基㗁唑啉)系樹脂、聚乙烯吡咯啶酮系樹脂。黏合劑可為:聚丙烯酸系樹脂等、聚甲基丙烯酸系樹脂、聚乙烯醇系樹脂、丙烯酸樹脂、聚乙烯醇縮丁醛樹脂、醇酸樹脂、聚苄、聚間二乙烯苯、聚苯乙烯等。
如上所說明般,根據本實施方式之靜電夾頭20之製造方法,可提供一種能夠防止異常放電之靜電夾頭之製造方法、靜電夾頭及基板處理裝置。又,根據本實施方式之靜電夾頭20之製造方法,可再製造一種能夠防止異常放電之靜電夾頭20。
關於本次所揭示之一實施方式之靜電夾頭之製造方法、靜電夾頭及基板處理裝置,應知其於所有方面均為例示,並非限制性之內容。上述實施方式於不脫離隨附之申請專利範圍及其主旨之情況下能夠以各種形態進行變化及改良。關於上述複數個實施方式中所記載之事項,可於不產生矛盾之範圍內採用其他構成,又,可於不產生矛盾之範圍內進行組合。
例如,圖3之例中,僅於供基板W載置之載置面20a之下部設置電極20b及流路22a,於供邊緣環25載置之階差部之下部亦可設置電極20b及流路22a。
本發明之基板處理裝置能夠應用於任意類型之裝置,如:Atomic Layer Deposition(ALD,原子層沈積)裝置、Capacitively Coupled Plasma(CCP,電容耦合電漿)裝置、Inductively Coupled Plasma(ICP,感應偶合電漿)裝置、Radial Line Slot Antenna(RLSA,徑向線縫隙天線)裝置、Electron Cyclotron Resonance Plasma(ECR,電子迴旋共振電漿)裝置、Helicon Wave Plasma(HWP,螺旋波電漿)裝置。
又,以電漿處理裝置為基板處理裝置之一例進行了說明,基板處理裝置只要係向基板實施規定之處理(例如,成膜處理、蝕刻處理等)的裝置即可,並不受電漿處理裝置所限定。
1:基板處理裝置
10:處理容器
10s:處理空間
12:本體
12e:排氣口
12g:閘閥
12p:通路
13:支持部
14:載置台
16:電極板
18:基台
19a:流路
19b:入口配管
19c:出口配管
20:靜電夾頭
20a:載置面
20b:電極
20b1:漿料層
20b11:漿料
20c:下表面
21:第1陶瓷板
21a:第1孔
21b:副流路
22:漿料層
22a:流路
22a1:流路
22a2:流路
22a3:流路
22b:漿料
23:第2陶瓷板
23a:第2孔
23b:主流路
24:氣體供給管線
25:邊緣環
26:冷卻器單元
27b:漿料層
27b1:漿料
28:陶瓷板
29:多孔層
30:上部電極
32:絕緣構件
34:頂板
34a:氣體出氣孔
36:支持體
36a:氣體擴散室
36b:氣體孔
36c:氣體導入口
38:氣體供給管
40:氣體源群
42:閥群
44:流量控制器群
46:遮罩
48:擋板
50:排氣裝置
51:直流電源
52:氣體源
53:排氣管
62:第1高頻電源
64:第2高頻電源
66:匹配器
68:匹配器
80:控制部
121:坯片
122:坯片
122a:流路
123:坯片
W:基板
圖1係表示一實施方式之基板處理裝置之一例的剖面模式圖。
圖2係表示一實施方式之形成於靜電夾頭之流路之一例的圖。
圖3係表示圖2之A-A剖面之一例的圖。
圖4係表示一實施方式之靜電夾頭之製造方法之一例的流程圖。
圖5(a)、圖5(b)係用於對一實施方式之靜電夾頭之製造方法之一例進行說明的圖。
圖6係用於對一實施方式之靜電夾頭之製造方法之另一例進行說明之圖。
圖7係表示圖2之A-A剖面之另一例的圖。
圖8係表示圖2之A-A剖面之另一例的圖。
圖9係表示一實施方式之靜電夾頭之製造方法(再製造)之一例的流程圖。
20:靜電夾頭
20a:載置面
20b:電極
20c:下表面
21:第1陶瓷板
21a:第1孔
22:漿料層
22a:流路
23:第2陶瓷板
23a:第2孔
28:陶瓷板
Claims (20)
- 一種靜電夾頭之製造方法,其具有如下步驟: 準備形成有第1孔之第1陶瓷板之步驟; 準備形成有第2孔之第2陶瓷板之步驟,且該第2孔形成於在水平方向上不同於上述第1孔之位置; 於上述第1陶瓷板或上述第2陶瓷板上,藉由漿料形成具備連接上述第1孔與上述第2孔之流路的漿料層之步驟; 使上述第1陶瓷板與上述第2陶瓷板介隔上述漿料層積層之步驟;及 使介隔上述漿料層積層之上述第1陶瓷板與上述第2陶瓷板接合之步驟。
- 如請求項1之靜電夾頭之製造方法,其中 上述第1陶瓷板及上述第2陶瓷板係氧化鋁之燒結體、或添加有碳化矽之氧化鋁之燒結體。
- 如請求項1或2之靜電夾頭之製造方法,其中 上述漿料係藉由將氧化鋁之粉末或添加有碳化矽之氧化鋁之粉末混合於溶劑中而形成。
- 如請求項1至3中任一項之靜電夾頭之製造方法,其中 上述第1陶瓷板或上述第2陶瓷板具有電極。
- 如請求項1或2之靜電夾頭之製造方法,其中 上述漿料係藉由將導電性粉末混合於溶劑中而形成。
- 如請求項5之靜電夾頭之製造方法,其中 上述導電性粉末係碳化鎢、碳化鉬、碳化鉭之任一種。
- 如請求項1至6中任一項之靜電夾頭之製造方法,其中 上述漿料層係藉由網版印刷形成。
- 如請求項1至7中任一項之靜電夾頭之製造方法,其中 上述流路包含:主流路;及副流路,其與上述主流路連接,且寬度窄於上述主流路。
- 如請求項8之靜電夾頭之製造方法,其中 上述主流路構成為與上述第2孔連接,上述副流路構成為與上述第1孔連接。
- 如請求項1至9中任一項之靜電夾頭之製造方法,其中 上述第1孔之開口小於上述第2孔之開口。
- 如請求項1至10中任一項之靜電夾頭之製造方法,其中 上述流路之高度為5 μm~30 μm。
- 如請求項1至11中任一項之靜電夾頭之製造方法,其具有如下步驟: 切削上述第1陶瓷板,使上述第2陶瓷板露出之步驟; 準備具有第1孔之新的第1陶瓷板之步驟; 於新的上述第1陶瓷板或上述第2陶瓷板上,藉由漿料形成具備連接上述第1孔與上述第2孔之流路的漿料層之步驟; 將新的上述第1陶瓷板與上述第2陶瓷板介隔上述漿料層積層之步驟;及 使介隔上述漿料層積層之新的上述第1陶瓷板與上述第2陶瓷板接合,從而再製造靜電夾頭之步驟。
- 一種靜電夾頭,其係具有陶瓷板者,且 上述陶瓷板中, 於上表面形成有第1孔, 於下表面形成有第2孔,該第2孔位於在水平方向上不同於第1孔之位置, 於內部形成有連接上述第1孔與上述第2孔之流路。
- 如請求項13之靜電夾頭,其中 上述流路由導電性構件所形成。
- 如請求項13之靜電夾頭,其中 上述流路形成為多孔狀。
- 如請求項13至15中任一項之靜電夾頭,其中 上述流路包含:主流路;及副流路,其與上述主流路連接,且寬度窄於上述主流路; 上述主流路與上述第2孔連接,上述副流路與上述第1孔連接。
- 如請求項13至16中任一項之靜電夾頭,其中 上述第1孔之開口小於上述第2孔之開口。
- 一種基板處理裝置,其具有: 處理容器; 載置台,其配置於上述處理容器內,供基板載置;及 靜電夾頭,其設置於上述載置台,且於上表面具有保持基板之陶瓷板;且 上述靜電夾頭中, 於上述陶瓷板之上述上表面形成有第1孔, 於上述陶瓷板之下表面形成有第2開口孔,該第2開口孔位於在水平方向上不同於上述第1孔之位置, 於上述陶瓷板之內部形成有連接上述第1孔與上述第2孔之流路。
- 如請求項18之基板處理裝置,其中 上述第2孔構成為經由氣體供給管線連接於氣體源。
- 如請求項18或19之基板處理裝置,其中 上述流路構成為形成為多孔狀。
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US11532461B2 (en) * | 2018-10-23 | 2022-12-20 | Tokyo Electron Limited | Substrate processing apparatus |
US20230132307A1 (en) * | 2021-10-26 | 2023-04-27 | Applied Materials, Inc. | Chuck For Processing Semiconductor Workpieces At High Temperatures |
JP7338674B2 (ja) * | 2021-12-24 | 2023-09-05 | 住友大阪セメント株式会社 | 静電チャック部材、静電チャック装置、および静電チャック部材の製造方法 |
WO2024079880A1 (ja) | 2022-10-14 | 2024-04-18 | 日本碍子株式会社 | ウエハ載置台 |
JP7480876B1 (ja) | 2023-02-22 | 2024-05-10 | Toto株式会社 | 静電チャック及びその製造方法 |
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US5738751A (en) * | 1994-09-01 | 1998-04-14 | Applied Materials, Inc. | Substrate support having improved heat transfer |
US6907921B2 (en) * | 1998-06-18 | 2005-06-21 | 3M Innovative Properties Company | Microchanneled active fluid heat exchanger |
US6572814B2 (en) * | 1998-09-08 | 2003-06-03 | Applied Materials Inc. | Method of fabricating a semiconductor wafer support chuck apparatus having small diameter gas distribution ports for distributing a heat transfer gas |
TW561515B (en) | 2001-11-30 | 2003-11-11 | Tokyo Electron Ltd | Processing device, and gas discharge suppressing member |
JP4413667B2 (ja) * | 2004-03-19 | 2010-02-10 | 日本特殊陶業株式会社 | 静電チャック |
JP4706516B2 (ja) * | 2006-03-15 | 2011-06-22 | 株式会社デンソー | セラミック積層体及びその製造方法 |
JP2006344999A (ja) * | 2006-09-04 | 2006-12-21 | Sumitomo Osaka Cement Co Ltd | サセプタ及びその製造方法 |
JP5218865B2 (ja) * | 2010-03-26 | 2013-06-26 | Toto株式会社 | 静電チャック |
JP2014049685A (ja) * | 2012-09-03 | 2014-03-17 | Ngk Spark Plug Co Ltd | 半導体製造用部品 |
WO2014098224A1 (ja) | 2012-12-21 | 2014-06-26 | 京セラ株式会社 | 試料保持具 |
JP6948822B2 (ja) * | 2017-04-25 | 2021-10-13 | 東京エレクトロン株式会社 | 基板処理装置及び基板取り外し方法 |
JP7071130B2 (ja) * | 2018-01-16 | 2022-05-18 | 日本特殊陶業株式会社 | 保持装置 |
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