TW202123792A - 用於在離散組件組裝中位置誤差補償的材料 - Google Patents

用於在離散組件組裝中位置誤差補償的材料 Download PDF

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TW202123792A
TW202123792A TW109119739A TW109119739A TW202123792A TW 202123792 A TW202123792 A TW 202123792A TW 109119739 A TW109119739 A TW 109119739A TW 109119739 A TW109119739 A TW 109119739A TW 202123792 A TW202123792 A TW 202123792A
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discrete component
substrate
coating
assembly
bingham fluid
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馬修 R 珊勒
塞繆爾 布朗
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美商優尼卡塔股份有限公司
美商庫力克及索發工業公司
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Abstract

本發明揭示一種總成，其包含：一基板；一塗層，其包含安置於該基板之一表面上之一賓漢(Bingham)流體；及一離散組件，其部分嵌入於包含該賓漢流體之該塗層中或安置於包含該賓漢流體之該塗層上。一種方法包含：輻照安置於一載體上之一動態釋放結構，其中一離散組件黏附至該動態釋放結構，該輻照引起該離散組件自該載體釋放；及將該釋放離散組件接收至安置於一基板之一表面上之一塗層中或該塗層上，該塗層包含一賓漢流體。

Description

用於在離散組件組裝中位置誤差補償的材料
本發明大體上係關於將離散組件組裝至一基板上。
在一態樣中，一種總成包含：一基板；一塗層，其包含安置於該基板之一表面上之一賓漢(Bingham)流體；及一離散組件，其部分嵌入於包含該賓漢流體之該塗層中或安置於包含該賓漢流體之該塗層上。
實施例可包含以下特徵之任何一或多者。
該賓漢流體包含以下之一或多者：一助熔劑、一焊錫膏、一導電油墨、一半導電油墨、一凝膠及一化學惰性材料。
該離散組件包含一發光二極體(LED)。
該基板包含一半導體晶圓。該基板包含一膠帶。該基板包含一剛性基板。該基板包含一印刷電路板。
在一態樣中，一種總成包含：一基板；及一塗層，其包含安置於該基板上之一賓漢流體，該塗層之一第一表面接觸該基板，其中該塗層經組態使得當一離散組件入射於該塗層之與該第一表面對置之一第二表面上時，該離散組件安置於該塗層上或部分嵌入於該塗層中。
實施例可包含以下特徵之任何一或多者。
該賓漢流體包含以下之一或多者：一助熔劑、一焊錫膏、導電油墨、一半導電油墨、一凝膠及一化學惰性材料。該賓漢流體包含一導電膏。
該基板包含一印刷電路板。
在一態樣中，一種方法包含：輻照安置於一載體上之一動態釋放結構，其中一離散組件黏附至該動態釋放結構，該輻照引起該離散組件自該載體釋放；及將該釋放離散組件接收至安置於一基板之一表面上之一塗層中或該塗層上，該塗層包含一賓漢流體。
實施例可包含以下特徵之任何一或多者。
輻照該動態釋放層包含使用雷射能來輻照該動態釋放層。
該輻照誘發該動態釋放層之至少一部分剝蝕。
該方法包含在該輻照之前減小該動態釋放層之一黏附力。
輻照一動態釋放層包含透過該載體輻照該動態釋放層。
該離散組件包含一LED。
第二基板包含一膠帶。該第二基板包含一印刷電路板。
在一態樣中，一種方法包含：在一目標基板之一表面上形成一塗層，該塗層包含一賓漢流體；及將一離散組件接收至該塗層中或該塗層上，該離散組件已自一載體藉由一雷射輔助轉移程序轉移。
在一實施例中，形成包含一賓漢流體之一塗層包含將一助熔劑、一焊錫膏、導電油墨、一半導電油墨、一凝膠及一化學惰性材料之一或多者安置至該目標基板之該表面上。
在一態樣中，一種方法包含：判定安裝於一雷射輔助轉移系統中之一離散組件總成之一離散組件與一目標基板上之一目標位置之間的一對準誤差，該離散組件總成包含由一動態釋放層黏附至一支撐件之該離散組件；基於該對準誤差來判定一波束偏移特性；及將指示該波束偏移特性之一信號提供至該雷射輔助轉移系統之一光學元件，該光學元件經組態以根據該波束偏移特性來調整一波束圖案相對於該離散組件之一位置。
實施例可包含以下特徵之任何一或多者。
該方法包含由該光學元件根據該波束偏移特性來調整該波束圖案相對於該離散組件之該位置。該方法包含使用一檢流計雷射掃描器來調整該波束圖案之該位置。
判定一對準誤差包含判定該對準誤差之一量值及該對準誤差之一方向之一或多者。
判定一波束偏移特性包含判定該離散組件之一中心與該離散組件上之一偏移位置之間的一偏移。判定一偏移包含判定該離散組件之該中心與該離散組件上之該偏移位置之間的該偏移之一量值及一方向之一或多者。
該方法包含判定一波束偏移特性以至少部分補償該對準誤差。該方法包含判定一波束偏移特性使得當該波束圖案根據該波束偏移特性來入射於該離散組件總成上時，該離散組件轉移至該基板上之該目標位置。
該方法包含使用一機器視覺系統來判定該對準誤差。
該方法包含使用該波束來輻照該動態釋放層，該波束圖案相對於該離散組件之該位置已根據該波束偏移特性來調整，該輻照引起該離散組件自該載體基板釋放。
該方法包含將該離散組件接收於該目標基板上之該目標位置處。
在一態樣中，一種系統包含一運算系統，其包含一或多個處理器，該一或多個處理器耦合至一記憶體且經組態以：判定一離散組件總成之一離散組件與一目標基板上之一目標位置之間的一對準誤差，該離散組件總成包含由一動態釋放層黏附至一支撐件之該離散組件，該離散組件總成安裝於一雷射輔助轉移系統中；基於該對準誤差來判定一波束偏移特性；及將指示該波束偏移特性之一信號提供至該雷射輔助轉移系統之一光學元件，該光學元件經組態以根據該波束偏移特性來調整一波束圖案相對於該離散組件之一位置。
實施例可包含以下特徵之任何一或多者。
該系統包含該光學元件。該光學元件包含一檢流計雷射掃描器。
判定一波束偏移特性包含判定該離散組件之一中心與該離散組件上之一偏移位置之間的一偏移。判定一偏移包含判定該離散組件之該中心與該離散組件上之該偏移位置之間的該偏移之一量值及一方向之一或多者。
該一或多個處理器及該記憶體經組態以判定一波束偏移特性以至少部分補償該對準誤差。該一或多個處理器及該記憶體經組態以判定一波束偏移特性，使得當該波束圖案根據該波束偏移特性來入射於該離散組件總成上時，該離散組件轉移至該基板上之該目標位置。
該一或多個處理器及該記憶體實施一機器視覺系統。
優先權主張 本申請案主張2019年6月11日申請之美國專利申請案第62,859,830號之優先權，該案之全部內容以引用的方式併入本文中。
吾人在此描述解決用於將離散組件自支撐件轉移至目標基板之雷射輔助程序之位置誤差的方法。在一些實例中，一目標基板可包含一塗層，其包含一賓漢流體，一離散組件接收至塗層上或塗層中。賓漢流體可防止經轉移離散組件之位置自發移位以藉此促成離散組件之高精度轉移。
圖1A描繪用於將離散組件102高產量、低成本無接觸地組裝至一基板130上之一雷射輔助轉移程序。術語「離散組件」大體上係指(例如)將變成一產品或電子裝置(例如電子、機電、光伏打、光子或光電子組件、模組或系統，例如具有形成於半導電材料之一部分上之一電路的任何半導體材料)之部分的任何單元。在一些實例中，離散組件可為發光二極體(LED)。離散組件可為超薄的，其意謂具有100 µm或更小、50 µm或更小、40 µm或更小、30 µm或更小、25 µm或更小、20 µm或更小、10 µm或更小或5 µm或更小之一最大厚度。離散組件可為超小的，其意謂具有小於或等於每邊300 µm、每邊100 µm、每邊50 µm、每邊20 µm或每邊10 µm之一最大長度或寬度尺寸。離散組件可既超薄又超小。
在雷射輔助轉移程序中，一離散組件總成108定位於一組件轉移系統100中。離散組件總成108包含一支撐件110及安置於支撐件110之一前側上之一動態釋放結構112。離散組件102由動態釋放結構112黏附至支撐件110。支撐件110可為一剛性支撐件(諸如一玻璃或剛性聚合物基板)或一撓性支撐件(諸如一膠帶)。動態釋放結構112可為一單層結構或一多層結構，諸如具有兩個、三個、四個或四個以上層之一結構。
在雷射輔助轉移程序中，使用輻射(諸如雷射光，例如一波束圖案116)來輻照支撐件110之一背側。波束圖案116可為一單一波束(如圖中所展示)或多個波束之一圖案，例如來自一單一光源或來自多個光源。支撐件110透射輻射(例如雷射能)之波長。透射一給定波長之一元件係給定波長之至少一些輻射穿過元件之一元件。輻射穿過支撐件110而入射於動態釋放結構112之一區域以引起雷射波束圖案116入射於其上之區域(吾人將其稱為輻照區域)中之動態釋放層之至少一部分厚度剝蝕。剝蝕產生受侷限氣體，其膨脹以產生動態釋放結構112中之一應力。應力引起動態釋放結構112之至少一些材料變形以形成一或多個鼓泡118。例如，當波束圖案116係一單一波束或多個緊密間隔波束之一圖案時，形成一單一鼓泡118。當波束圖案116包含足夠間隔開之多個波束時，形成多個鼓泡118之一圖案。在此，術語「鼓泡118」大體上係指一單一鼓泡或多個鼓泡之一圖案。
鼓泡118對離散組件102施加一機械力。當由鼓泡118施加之機械力足以克服離散組件102與動態釋放結構112之間的黏附力時，由鼓泡118施加之機械力(結合重力)推動離散組件遠離支撐件110 (例如沿一向下方向)以轉移至一目標基板130。
可在美國公開專利第US 2014/0238592號中找到雷射輔助轉移程序之進一步描述，該專利之全部內容以引用的方式併入本文中。
一轉移向量150指示離散組件102在其自支撐件110釋放之後的行進方向且指向離散組件102在目標基板130上之最終放置。轉移向量150之方向依據雷射波束圖案116相對於離散組件102之位置而變化。當入射雷射波束圖案116相對於離散組件102居中(如圖1A及圖1B中所展示)時，所得鼓泡118 (例如單一鼓泡或多個鼓泡之圖案)亦相對於離散組件102居中，且轉移向量150垂直於動態釋放結構112之表面(指稱一法向轉移向量)。因此，離散組件102在直接位於離散組件總成108中之離散組件102之位置下方之一位置處著陸於目標基板130上。
雷射輔助轉移程序之一目的可為將離散組件102轉移至目標基板130上之一特定目標位置140。目標位置140可為其中意欲定位離散組件102之中心之目標基板130上之位置。例如，當目標基板130係一裝置基板(諸如一印刷電路板)時，目標位置140可為其中互連元件(諸如接合墊)將與離散組件102上之互連元件對準之目標基板130上之一位置。
為使目標基板130上之目標位置140與離散組件總成108中之離散組件102之位置對準，可相對於離散組件總成108移動目標基板130或可相對於目標基板130來移動離散組件總成108或兩者。可使用一機械調整機構(諸如一線性平移台、一致動器或另一適合機械調整裝置)來實施相對移動。例如，可調整離散組件總成108中之離散組件102之中心在一全局x-y座標系中之座標以匹配目標位置之全局x-y座標。
離散組件總成108及目標基板130之相對定位之機械調整有時會遭受(例如)由機械調整裝置之不精確導致之誤差，諸如沿x軸、y軸或兩者之偏差。此誤差會導致離散組件102之x-y座標與目標位置140之x-y座標之間的一對準誤差。例如，除歸因於機械調整之誤差之外或作為歸因於機械調整之誤差之替代，其他誤差源亦會促成離散組件102之x-y座標與目標位置140之x-y座標之間的一對準誤差。例如，離散組件總成108中之離散組件102之預期位置與離散組件總成108中之離散組件102之實際位置之間的一差異可產生於先前處理期間，諸如在離散組件102之單粒化或將離散組件102放置至支撐件110上期間。若目標位置140與離散組件總成108中之離散組件102之位置之間的x-y座標對準係基於離散組件108之預期位置，則由先前處理導致之此差異會導致離散組件102之x-y座標與目標位置140之x-y座標之間的一對準誤差。在一些實例中，可藉由在開始雷射輔助轉移程序之前精細機械調整目標基板130與離散組件總成108之相對位置來至少部分解決此等對準誤差。
參考圖2A至圖2C，在一些實例中，波束圖案116可在雷射輔助轉移程序期間自離散組件102之中心偏移，其意謂波束圖案116入射於自離散組件之一中心偏移之一位置處。波束圖案116之偏移可用於至少部分補償離散組件102之x-y座標與目標位置140之x-y座標之間的對準誤差。
當波束圖案116自離散組件102偏移(例如不居中於離散組件102上)時，所得鼓泡118 (例如單一鼓泡或多個鼓泡之圖案)亦不相對於離散組件102居中。此偏移引起轉移向量150自表面法線偏離一角度α (指稱一傾斜轉移向量)。轉移向量150之角度α與波束圖案116自離散組件102之中心偏移(有時指稱波束偏移)之量值d及方向相關。就一法向轉移向量(例如圖1A中所展示)而言，離散組件102將轉移至直接位於離散組件總成中之離散組件102之位置下方之目標位置140。傾斜轉移向量引起離散組件102轉移至相對於目標位置140移位之目標基板130上之一偏移位置134。
圖2B及圖2C展示離散組件總成108及附接離散組件102之俯視圖，其中波束圖案116自離散組件102之中心偏移。虛線框132描繪轉移之後的目標基板130上之離散組件102之位置，其中虛線框以偏移位置134為中心。目標位置140與偏移位置134之間的距離係由波束圖案116之偏移誘發之放置誤差ε。放置誤差ε可沿x軸(如圖2B中所展示)，沿y軸(圖中未展示)，可具有沿x軸及y軸之各者的一分量(如圖2C中所展示)。
放置誤差ε之量值與波束偏移之量值d及離散組件總成108中之離散組件102之一底面與目標基板130之一頂面之間的一間隙135之高度g相關。例如，波束偏移之量值d可具有與間隙高度g給定之放置誤差ε之一直接線性關係。轉移向量150指向之空間方向與波束偏移之方向相反。例如，在圖2A中，波束圖案116朝向圖之左邊偏移，而轉移向量150指向圖之右邊。
如上文所討論，一對準誤差可發生於離散組件102之x-y座標與目標位置140之x-y座標之間。為補償此誤差，波束圖案116可經有意偏移使得放置誤差ε匹配離散組件102之x-y座標與目標位置140之x-y座標之間的對準誤差。藉由將一偏移引入至波束圖案116來補償對準誤差可有助於達成雷射輔助轉移程序之精確對準且能夠快速達成對準以藉此促進高產量轉移程序。
在一實例中，參考圖3，一對準誤差a (圖中未展示)可存在於一雷射輔助轉移系統300中之離散組件102之x-y座標與目標位置140之x-y座標之間。對準誤差a可歸因於(例如)機械對準機構之不精確、離散組件102至支撐件110上之定位誤差或其他原因。為補償對準誤差，波束圖案116可經偏移以引起導致等於對準誤差a之一放置誤差ε的一傾斜轉移向量150。接著，儘管離散組件總成108中之離散組件102之x-y座標與目標位置140之x-y座標之間存在對準誤差a，但離散組件102直接轉移至其目標位置140。
雷射輔助轉移系統300包含一光源302，諸如一雷射。來自光源302之一光束306可入射於可使來自光源302之光束306形成為波束圖案116之一或多個光學元件304 (諸如透鏡、繞射光學元件(例如分束器))上。波束圖案116可為一單一光束(如圖中所展示)或可包含多個小波束，其係具有小於光束306之一大小(例如直徑)的光束。
一光偵測器310 (諸如一攝影機)經定位以擷取離散組件102及目標基板130上之目標位置140之相對位置之影像。將來自光偵測器310之影像312提供至一運算系統314，運算系統314包含耦合至一記憶體且經組態以處理影像312以判定對準誤差a之一或多個處理器。例如，運算系統312可實施一機器視覺方法以識別離散組件102及目標位置140且判定離散組件102之一中心與目標位置140之間的間隔之量值及方向。
基於對準誤差a，運算系統312判定波束圖案116之一波束偏移特性，使得當波束圖案116根據波束偏移特性來偏移時，離散組件102將轉移至目標位置140。波束偏移特性指示波束偏移之量值d及波束偏移之方向。在一些實例中，波束偏移特性可指示其他參數，諸如波束圖案116中之小波束之一數目或配置。
運算系統314將指示波束偏移特性之一信號316提供至(例如)雷射輔助轉移系統300以控制一或多個光學元件318根據波束偏移特性來調整波束圖案116之位置。在一實例中，一或多個光學元件318可為可調整波束圖案116之位置的一掃描器，諸如一檢流計雷射掃描器。
可藉由一掃描器實施波束偏移特向來快速達成對準誤差補償以使每離散組件之轉移時間能夠較低且因此提高雷射輔助轉移程序之產量。
參考圖4，在一些實例中，在一雷射輔助轉移程序中接收一離散組件102之一目標基板430可包含一塗層，其包含安置於其表面上之一晶粒捕捉材料402。晶粒捕捉材料(DCM) 402可為在離散組件自載體基板轉移時接收離散組件且使其保持於其目標位置中同時減少離散組件在目標基板上之轉移後移動的一材料。吾人有時將接收離散組件且使其保持於其目標位置中之程序稱為捕捉離散組件。DCM可為在離散組件102入射於塗層402上時減慢離散組件102之速度的一黏性流體。
在一些情況中，在一離散組件102由塗層402之DCM捕捉之後，離散組件102可「漂浮」於塗層中。一離散組件102之漂浮係離散組件102自其原始放置位置緩慢地運動移位一任意距離。漂浮可由表面張力、熱漂移、組件衝擊之後的流體調平、布朗(Brownian)運動或其他因數或多個因數之一組合引起。一接收離散組件之漂浮可為非所要的，例如因為漂浮會促成轉移程序之總放置誤差。例如，組件漂浮會引起放置誤差超過既定準則以藉此使放置離散組件無法用於其意欲應用。在一些實例中，諸如在涉及緊密間隔離散組件之應用中，組件漂浮會引起一新進離散組件與一先前放置離散組件接觸以藉此將進一步放置誤差增至先前放置離散組件或產生離散組件組之其他非所要特性。
在一些實例中，可針對一特定應用(例如針對一特定大小或質量之一離散組件)來調諧塗層402之DCM之流變性質以提高雷射輔助轉移程序之準確性及可靠性。
參考圖5A及圖5B，在一些實例中，一目標基板530包含一塗層502，其包含安置於一基板504之一表面上之一賓漢流體。一賓漢流體係在一低應力表現得像剛性體但在及高於其屈服應力像一黏性流體般流動之一黏塑性材料。賓漢流體有時亦指稱賓漢液體、賓漢塑膠、結構化液體或黏塑性固體。賓漢流體可包含一凝膠(例如醇凝膠、水凝膠、有機凝膠或其他類型之凝膠)、一合成聚合物、一黏性膏、一助熔劑、一焊錫膏、一懸浮液、一導電或半導電油墨(例如一有機油墨)、一化學惰性材料或其等之任何兩者或更多者之一組合。
當一離散組件102在一雷射輔助轉移程序中轉移至目標基板530時，離散組件102由包含賓漢流體之塗層502捕捉且部分嵌入至塗層中(如圖5B中所展示)或安置於塗層之頂部上。部分嵌入意謂離散組件102之底面136低於塗層502之一頂面506，同時離散組件102之一頂面508高於塗層502之頂面506。在離散組件102部分嵌入於塗層502中之後，賓漢流體之流變特性防止離散組件102自發移位其位置或漂浮。因此，可透過將包含一賓漢流體之一塗層用作一晶粒捕捉材料來提高組件放置精確度及準確性。
基板504可為一膠帶，諸如一晶圓膠帶。基板504可為一剛性基板，諸如一玻璃基板或一半導體基板。基板504可為一裝置基板，諸如一印刷電路板(PCB)。在一些實例中，基板504可為意欲用於多晶片堆疊中之一半導體基板，諸如一半導體晶圓或其部分。
當基板504係一裝置基板時，包含一賓漢流體之塗層502可促進離散組件102互連至基板504上之電接點，諸如接合墊。例如，包含賓漢流體之塗層502可為一導電膏，諸如一導電焊錫膏。參考圖5C，在一些實例中，可在離散組件102之雷射輔助轉移之後實施一處理步驟以使離散組件102之底面136與基板504上之電接點接觸。在一實例中，包含賓漢流體之塗層502可為在一焊接程序期間被移除之一焊接助熔劑。在一實例中，基板504與部分嵌入至塗層502中之離散組件102之總成經受(例如)來自一熱電極之壓力，其將賓漢流體擠出離散組件102與基板504之間以藉此實現離散組件102與基板504之間的電接觸。
已描述若干實施例。然而，應瞭解，可在不背離本發明之精神及範疇的情況下作出各種修改。例如，一些上述步驟可與順序無關，且因此可依不同於所描述之順序的一順序執行。
其他實施方案亦在以下申請專利範圍之範疇內。
100:組件轉移系統 102:離散組件 108:離散組件總成 110:支撐件 112:動態釋放結構 116:波束圖案 118:鼓泡 130:目標基板 132:虛線框 134:偏移位置 135:間隙 136:底面 140:目標位置 150:轉移向量 300:雷射輔助轉移系統 302:光源 304:光學元件 306:光束 310:光偵測器 312:影像 314:運算系統 316:信號 318:光學元件 402:晶粒捕捉材料(DCM)/塗層 430:目標基板 502:塗層 504:基板 506:頂面 508:頂面 530:目標基板 α:角度 ε:放置誤差 d:量值 g:間隙高度
圖1A及圖1B係一雷射輔助轉移程序之圖式。
圖2A至圖2C係一雷射輔助轉移程序之圖式。
圖3係一雷射輔助轉移系統之一圖式。
圖4係一離散組件及一目標基板之一圖式。
圖5A至圖5C係一雷射輔助轉移程序之圖式。
102:離散組件
136:底面
502:塗層
504:基板
506:頂面
508:頂面
530:目標基板

Claims (21)

  1. 一種總成，其包括： 一基板； 一塗層，其包括安置於該基板之一表面上之一賓漢(Bingham)流體；及 一離散組件，其部分嵌入於包括該賓漢流體之該塗層中或安置於包括該賓漢流體之該塗層上。
  2. 如請求項1之總成，其中該賓漢流體包括以下之一或多者：一助熔劑、一焊錫膏、一導電油墨、一半導電油墨、一凝膠及一化學惰性材料。
  3. 如請求項1或2之總成，其中該離散組件包括一發光二極體(LED)。
  4. 如請求項1或2之總成，其中該基板包括一半導體晶圓。
  5. 如請求項1或2之總成，其中該基板包括一膠帶。
  6. 如請求項1或2之總成，其中該基板包括一剛性基板。
  7. 如請求項1或2之總成，其中該基板包括一印刷電路板。
  8. 一種總成，其包括： 一基板；及 一塗層，其包括安置於該基板上之一賓漢流體，該塗層之一第一表面接觸該基板， 其中該塗層經組態使得當一離散組件入射於該塗層之與該第一表面對置之一第二表面上時，該離散組件安置於該塗層上或部分嵌入於該塗層中。
  9. 如請求項8之總成，其中該賓漢流體包括以下之一或多者：一助熔劑、一焊錫膏、導電油墨、一半導電油墨、一凝膠及一化學惰性材料。
  10. 如請求項8或9之總成，其中該賓漢流體包括一導電膏。
  11. 如請求項8或9之總成，其中該基板包括一印刷電路板。
  12. 一種方法，其包括： 輻照安置於一載體上之一動態釋放結構，其中一離散組件黏附至該動態釋放結構，該輻照引起該離散組件自該載體釋放；及 將該釋放離散組件接收至安置於一基板之一表面上之一塗層中或該塗層上，該塗層包括一賓漢流體。
  13. 如請求項12之方法，其中輻照該動態釋放層包括使用雷射能來輻照該動態釋放層。
  14. 如請求項12或13之方法，其中該輻照誘發該動態釋放層之至少一部分剝蝕。
  15. 如請求項12或13之方法，其包括在該輻照之前減小該動態釋放層之一黏附力。
  16. 如請求項12或13之方法，其中輻照一動態釋放層包括透過該載體輻照該動態釋放層。
  17. 如請求項12或13之方法，其中該離散組件包括一LED。
  18. 如請求項12或13之方法，其中該第二基板包括一膠帶。
  19. 如請求項12或13之方法，其中該第二基板包括一印刷電路板。
  20. 一種方法，其包括： 在一目標基板之一表面上形成一塗層，該塗層包括一賓漢流體；及 將一離散組件接收至該塗層中或該塗層上，該離散組件已藉由一雷射輔助轉移程序自一載體轉移。
  21. 如請求項20之方法，其中形成包括賓漢流體之一塗層包括將一助熔劑、一焊錫膏、導電油墨、一半導電油墨、一凝膠及一化學惰性材料之一或多者安置至該目標基板之該表面上。
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