TW202122534A - Adhesive sheet - Google Patents

Adhesive sheet Download PDF

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TW202122534A
TW202122534A TW109119439A TW109119439A TW202122534A TW 202122534 A TW202122534 A TW 202122534A TW 109119439 A TW109119439 A TW 109119439A TW 109119439 A TW109119439 A TW 109119439A TW 202122534 A TW202122534 A TW 202122534A
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adhesive sheet
adhesive
adhesive layer
energy ray
sheet
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TW109119439A
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Chinese (zh)
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TWI846884B (en
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高野健
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日商琳得科股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062—Copolymers with monomers not covered by C09J133/06
    • C09J133/066—Copolymers with monomers not covered by C09J133/06 containing -OH groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Plasma & Fusion (AREA)

Abstract

Provided is an adhesive sheet (10) that includes a substrate (11) and an adhesive layer (12), in which the adhesive layer (12) contains an energy ray-curable resin, and in which the breaking energy of the adhesive layer (12) alone after irradiation with energy rays is 0.055 J or more.

Description

黏著薄片Adhesive sheet

本發明係關於黏著薄片。The present invention relates to adhesive sheets.

近年來，電子機器之小型化、輕量化，及高機能化係有進展。對搭載於電子機器之半導體裝置，亦要求小型化、薄型化，及高密度化。半導體晶片，係可能有構裝為接近其尺寸之封裝的情形。如此的封裝，亦有稱為晶片尺寸封裝(Chip Scale Package；CSP)者。作為CSP之一者，可列舉晶圓等級封裝(Wafer Level Package；WLP)。於WLP中，藉由切割而進行單片化之前，係於晶圓形成外部電極等，最終係切割晶圓而進行單片化。WLP可列舉扇入(Fan-In)型與扇出(Fan-Out)型。扇出型之WLP(以下有略稱為「FO-WLP」者)中，係將半導體晶片以密封構件被覆，使成為較晶片尺寸更大的區域，而形成半導體晶片密封體，不僅於半導體晶片之電路面，於密封構件之表面區域亦形成再配線層或外部電極。 例如，文獻1(國際公開第2010/058646號)中，記載就由半導體晶圓單片化而得的複數個半導體晶片而言，殘留其電路形成面，使用鑄模構件將周圍圍繞而形成擴張晶圓，於半導體晶片外之區域延伸存在而形成再配線圖型的半導體封裝之製造方法。文獻1記載之製造方法中，係在以鑄模構件圍繞經單片化之複數個半導體晶片之前，改貼擴展薄片，使擴展薄片延展而擴大複數個半導體晶片之間之距離。文獻2(國際公開第2018/003312號)中，記載為了擴增複數個半導體晶片之間隔所使用的半導體加工用薄片。 如上述之FO-WLP之製造方法中，為了於半導體晶片外之區域形成上述再配線圖型等，係使擴展薄片擴張，將半導體晶片彼此充分地分離。 擴展步驟所用的薄片，通常具有用以固定薄片上之半導體晶片的黏著劑層，與用以支持黏著劑層之基材。如文獻1及文獻2記載般將擴展用之薄片拉伸時，不僅薄片之基材，黏著劑層亦會被拉伸。擴展步驟後，由黏著劑層剝離半導體晶片時，於與黏著劑層接觸的半導體晶片之表面可能有產生殘留黏著劑層的不良狀況之情況。如此的不良狀況在本說明書中有稱為黏著劑殘留者。In recent years, there has been progress in the miniaturization, weight reduction, and high-performance of electronic equipment. For semiconductor devices mounted in electronic equipment, miniaturization, thinning, and high density are also required. A semiconductor chip may be packaged in a package close to its size. Such a package is also called a chip scale package (CSP). As one of the CSPs, a wafer level package (Wafer Level Package; WLP) can be cited. In WLP, before singulation by dicing, external electrodes and the like are formed on the wafer, and finally the wafer is singulated for singulation. WLP can include fan-in (Fan-In) type and fan-out (Fan-Out) type. In fan-out WLP (hereinafter abbreviated as "FO-WLP"), the semiconductor chip is covered with a sealing member to make the area larger than the chip size, and the semiconductor chip sealing body is formed, not only in the semiconductor chip On the circuit surface, a rewiring layer or external electrode is also formed on the surface area of the sealing member. For example, Document 1 (International Publication No. 2010/058646) describes that for a plurality of semiconductor wafers obtained by singulating semiconductor wafers, the circuit formation surface remains and the surrounding area is formed by using a mold member to form an expanded crystal. A circle is a method of manufacturing a semiconductor package that extends to an area outside the semiconductor chip to form a rewiring pattern. In the manufacturing method described in Document 1, the expansion sheet is reattached before the singulated semiconductor wafers are surrounded by a mold member to extend the expansion sheet to increase the distance between the plurality of semiconductor wafers. Document 2 (International Publication No. 2018/003312) describes a semiconductor processing sheet used in order to increase the gap between a plurality of semiconductor wafers. As in the above-mentioned FO-WLP manufacturing method, in order to form the above-mentioned redistribution pattern in the area outside the semiconductor wafer, the expansion sheet is expanded to sufficiently separate the semiconductor wafers from each other. The sheet used in the expansion step usually has an adhesive layer for fixing the semiconductor chip on the sheet and a base material for supporting the adhesive layer. When the sheet for expansion is stretched as described in Document 1 and Document 2, not only the substrate of the sheet but also the adhesive layer will be stretched. After the expansion step, when the semiconductor wafer is peeled from the adhesive layer, the surface of the semiconductor wafer that is in contact with the adhesive layer may have a problem of residual adhesive layer. Such bad conditions are referred to as adhesive residues in this specification.

本發明之目的為提供可抑制黏著劑殘留的黏著薄片。 依照本發明之一態樣，提供一種黏著薄片，其具有基材與黏著劑層，前述黏著劑層，含有能量線硬化性樹脂，能量線照射後之前述黏著劑層單質的斷裂能(breaking energy)為0.055J以上。 本發明之一態樣之黏著薄片中，能量線照射後之前述黏著劑層單質的斷裂能較佳為0.065J以上。 本發明之一態樣之黏著薄片中，能量線照射後之前述黏著劑層單質的斷裂伸度較佳為6%以上。 本發明之一態樣之黏著薄片中，前述能量線硬化性樹脂，較佳具有1個以上的下述通式(11)表示之乙二醇單位。

Figure 02_image001
(前述通式(11)中，m為1以上)。 本發明之一態樣之黏著薄片中，前述能量線硬化性樹脂，較佳進一步具有3個以上的能量線硬化性之官能基。 本發明之一態樣之黏著薄片中，前述能量線硬化性樹脂，較佳進一步具有1個以上的甘油骨架。 依照本發明之一態樣，可提供可抑制黏著劑殘留的黏著薄片。The object of the present invention is to provide an adhesive sheet capable of suppressing residual adhesive. According to one aspect of the present invention, there is provided an adhesive sheet, which has a substrate and an adhesive layer, the adhesive layer contains an energy ray curable resin, and the breaking energy of the adhesive layer after the energy ray is irradiated. ) Is 0.055J or more. In the adhesive sheet of one aspect of the present invention, the breaking energy of the elemental substance of the adhesive layer after energy ray irradiation is preferably 0.065J or more. In the adhesive sheet of one aspect of the present invention, the elongation at break of the elemental substance of the adhesive layer after energy ray irradiation is preferably 6% or more. In the adhesive sheet of one aspect of the present invention, the aforementioned energy ray curable resin preferably has one or more ethylene glycol units represented by the following general formula (11).
Figure 02_image001
(In the aforementioned general formula (11), m is 1 or more). In the adhesive sheet of one aspect of the present invention, the aforementioned energy ray curable resin preferably further has 3 or more energy ray curable functional groups. In the adhesive sheet of one aspect of the present invention, the aforementioned energy ray curable resin preferably further has one or more glycerin skeletons. According to one aspect of the present invention, there can be provided an adhesive sheet that can suppress the adhesive residue.

以下，說明本發明之一實施形態。 [黏著薄片] 本實施形態之黏著薄片，具有基材與黏著劑層。黏著薄片之形狀，可採取例如膠帶狀(長條之形態)，及標籤狀(片狀之形態)等任何形狀。 (黏著劑層) 本實施形態之黏著薄片中，黏著劑層含有能量線硬化性樹脂。能量線照射後之黏著劑層單質的斷裂能為0.055J以上。 依照具備如此的能量線照射後之黏著劑層單質的斷裂能之特性的黏著薄片，可抑制黏著劑殘留。該斷裂能若為0.055J以上，則擴展步驟後，照射能量線而將晶片由黏著薄片剝離時，黏著劑層不易斷裂，黏著劑不易殘留。 本實施形態之黏著薄片中，能量線照射後之黏著劑層單質的斷裂能較佳為0.065J以上。 本實施形態之黏著薄片中，能量線照射後之黏著劑層單質的斷裂能較佳為0.300J以下。 能量線照射後之黏著劑層單質的斷裂能，可藉由後述實施例記載之方法測定。 本實施形態之黏著薄片中，較佳係能量線照射前之黏著劑層單質的位移-應力曲線中之斷裂伸度為1500%以上，黏著劑層單質的位移-應力曲線中之位移為1500%時，應力為0.22MPa以下。 依照如此的具有兼備斷裂伸度及應力之特性的黏著劑層之黏著薄片，提高於擴展步驟之擴張後的排列性，且可抑制晶片浮起。 擴展步驟中，例如，擴張前之半導體晶片彼此的間隔為35μm時，藉由擴展而將間隔擴張至2000μm時，黏著劑層會追隨於基材並且大幅變形。本實施形態之黏著薄片所具有的黏著劑層之能量線照射前的斷裂伸度為1500%以上時，即使因如此的擴展而大變形時，黏著劑層亦可不會斷裂地追隨於基材。 進一步地，黏著劑層單質的位移-應力曲線中之位移為1500%時之應力為0.22MPa以下時，藉由擴展而使基材大變形時，可減低藉由半導體晶片抑制黏著薄片變形之束縛力。半導體晶片之與黏著劑層鄰接之面，係固定黏著劑層表面，擴展時藉由將黏著劑層拉伸而施加抑制基材變形之束縛力，其結果，黏著薄片之變形變得不均勻，認為損及半導體晶片之排列性。假設該束縛力為零，則可將黏著薄片均勻地擴張，束縛力變得越大，黏著薄片之變形越集中於半導體晶片彼此之間隙附近，進而考慮到全部工作區域時，束縛力集中於端部之半導體晶片，擴張本身變得困難。 本實施形態之黏著薄片中該應力為0.22MPa以下時，可減低如此的束縛力，因此展現良好的排列性。黏著劑層單質的位移-應力曲線中之位移為1500%時之應力超過0.22MPa時，受到半導體晶片之束縛力的影響，損及排列性。 本實施形態之黏著薄片中，黏著劑層單質的位移-應力曲線中之位移為1500%時，應力較佳為0.17MPa以下。 依照具有位移1500%時之應力為0.17MPa以下的黏著劑層之黏著薄片，即使於擴展步驟中的擴張量大，亦顯示優良的排列性。 本實施形態之黏著薄片中，黏著劑層單質的位移-應力曲線中之位移為1500%時，應力較佳為0.0001MPa以上。位移1500%時之應力藉由為0.0001MPa以上，可防止黏著劑層變得過軟。 位移1500%時之應力若為0.0001MPa以上，則即使於擴展步驟中擴張量大，亦可防止黏著劑之凝集力不足，黏著薄片由擴展裝置之夾頭脫離等之不良狀況。 本實施形態之黏著薄片中，能量線照射後之黏著劑層單質的斷裂伸度較佳為6%以上。 能量線照射後之黏著劑層單質的斷裂伸度若為6%以上，則黏著劑層可追隨於由黏著薄片拾取半導體晶片時之該黏著薄片的變形，其結果，可抑制黏著劑殘留。 黏著劑層單質的位移-應力曲線中之斷裂伸度，以及位移-應力曲線中之位移為1500%時之應力，可藉由後述實施例記載之方法測定。 本實施形態之黏著薄片中，黏著劑層所含有的黏著劑，只要能量線照射後之黏著劑層單質的斷裂能滿足前述之範圍，則無特殊限定。能夠以滿足前述斷裂能之範圍的方式，例如，由以下所說明之材料中適當選擇來摻合構成黏著劑層之材料(黏著劑)。 •能量線硬化性樹脂(a1) 能量線硬化性樹脂(a1)，為受到能量線照射時會聚合硬化的樹脂。能量線例如可列舉紫外線及電子束等。能量線硬化性樹脂(a1)，較佳為紫外線硬化性樹脂。 能量線硬化性樹脂(a1)，於分子內具有至少1個的能量線硬化性之官能基。能量線硬化性之官能基，較佳為包含碳-碳雙鍵之官能基、更佳為丙烯醯基或甲基丙烯醯基。 含有能量線硬化性樹脂(a1)之黏著劑層，藉由能量線照射而硬化，黏著力會降低。欲分離被黏著體與黏著薄片時，可藉由對黏著劑層照射能量線而容易地分離。 能量線硬化性樹脂(a1)之例子，可列舉具有能量線硬化性基之低分子量化合物(單官能之單體、多官能之單體、單官能之寡聚物，及多官能之寡聚物)。 能量線硬化性樹脂(a1)，較佳具有1個以上的下述通式(11)表示之乙二醇單位。

Figure 02_image003
(前述通式(11)中，m為1以上)。 能量線硬化性樹脂(a1)具有2個以上的下述通式(11)表示之乙二醇單位時，2個以上的m，係彼此相同或相異。 前述通式(11)中之m較佳為2以上。 能量線硬化性樹脂(a1)藉由具有柔軟的聚乙二醇鏈，硬化前之黏著劑層容易變形，硬化後之黏著劑層的交聯密度適度地降低，黏著劑層不易斷裂。 能量線硬化性樹脂(a1)每一分子所具有的乙二醇單位之數目，較佳為3以上、更佳為5以上。 又，一實施形態中，能量線硬化性樹脂(a1)每一分子所具有的乙二醇單位之數目，亦佳為10以上、亦更佳為30以上、亦再更佳為50以上。 能量線硬化性樹脂(a1)每一分子所具有的乙二醇單位之數目，較佳為100以下、更佳為90以下、又更佳為80以下。 能量線硬化性樹脂(a1)，進一步地，較佳具有3個以上的能量線硬化性之官能基、更佳具有4個以上。能量線硬化性樹脂(a1)所具有的能量線硬化性之官能基數目若為3以上，則更容易抑制黏著劑殘留。 能量線硬化性樹脂(a1)，較佳具有通式(11)表示之乙二醇單位與能量線硬化性之官能基直接鍵結而得之基。 能量線硬化性樹脂(a1)，較佳具有1個以上的含有下述通式(11A)表示之乙二醇單位之基。
Figure 02_image005
(前述通式(11A)中，m為1以上，R為氫原子或甲基)。 能量線硬化性樹脂(a1)具有前述通式(11A)表示之基時，一分子中之前述通式(11A)表示之基的數目，較佳為3以上、更佳為4以上。 能量線硬化性樹脂(a1)於一分子中所具有的前述通式(11A)表示之基的數目若為3以上，則更容易抑制黏著劑殘留。 能量線硬化性樹脂(a1)具有前述通式(11A)表示之基時，一分子中之前述通式(11A)表示之基的數目，較佳為10以下、更佳為9以下、又更佳為8以下。 能量線硬化性樹脂(a1)，較佳進一步具有1個以上的甘油骨架。能量線硬化性樹脂(a1)亦佳具有聚甘油骨架。 能量線硬化性樹脂(a1)藉由具有較如飽和烴骨架之碳-碳鍵系具有更多數的醚鍵，且可多官能化之甘油骨架，黏著劑層更容易變形，同時可實現良好的硬化性。 能量線硬化性樹脂(a1)較佳以下述通式(12)表示。
Figure 02_image007
(前述通式(12)中， n為1以上， R1 、R2 及R3 係分別獨立地為前述能量線硬化性樹脂之分子中的原子或基， R1 、R2 及R3 當中至少1者具有1個以上的前述通式(11)表示之乙二醇單位)。 n為1時，前述通式(12)係以下述通式(12-1)表示。
Figure 02_image009
(前述通式(12-1)中，R1 、R2 及R3 係與前述通式(12)中之R1 、R2 及R3 同義)。 n為4時，前述通式(12)係以下述通式(12-4)表示。
Figure 02_image011
(前述通式(12-4)中， R1A 、R1B 、R1C 及R1D ，係分別獨立地與前述通式(12)中之R1 同義， R2 及R3 係與前述通式(12)中之R2 及R3 同義)。 R1 、R2 及R3 ，較佳分別獨立地，具有1個以上的前述通式(11)表示之乙二醇單位。此時，R1 、R2 及R3 中之乙二醇單位的數目係彼此相同或相異。 R1 、R2 及R3 較佳當中至少1者為包含能量線硬化性的官能基之基，R1 、R2 及R3 ，更佳分別獨立地為包含能量線硬化性的官能基之基。 R1 、R2 及R3 較佳分別獨立地為具有1個以上的前述通式(11)表示之乙二醇單位，且包含能量線硬化性之官能基之基。 R1 、R2 及R3 更佳分別獨立地為前述通式(11A)表示之基。 例如，前述通式(12-4)表示之能量線硬化性樹脂(a1)中，R1A 、R1B 、R1C 、R1D 、R2 及R3 各具有1個能量線硬化性之官能基時，該能量線硬化性樹脂(a1)，相當具有6個能量線硬化性之官能基。 能量線硬化性樹脂(a1)，較佳以下述通式(13)表示。
Figure 02_image013
(前述通式(13)中， n為1以上， R11 、R12 及R13 係分別獨立地為前述能量線硬化性樹脂之分子中的其他原子或基， m1、m2及m3係分別獨立地為1以上)。 前述通式(13)中，n為2以上時，2個以上的m1，係彼此相同或相異，2個以上的R11 ，係彼此相同或相異。 R11 、R12 及R13 較佳當中至少1者為包含能量線硬化性的官能基之基，R11 、R12 及R13 ，更佳分別獨立地為包含能量線硬化性的官能基之基。 能量線硬化性樹脂(a1)，亦佳以下述通式(14)表示。
Figure 02_image015
(前述通式(14)中， R21 、R22 、R23 及R24 係分別獨立地為前述能量線硬化性樹脂之分子中的其他原子或基， R21 、R22 、R23 及R24 當中至少1者具有1個以上的前述通式(11)表示之乙二醇單位)。 R21 、R22 、R23 及R24 ，較佳分別獨立地，具有1個以上的前述通式(11)表示之乙二醇單位。此時，R21 、R22 、R23 及R24 中之乙二醇單位的數目係彼此相同或相異。 R21 、R22 、R23 及R24 較佳當中至少1者為包含能量線硬化性的官能基之基，R21 、R22 、R23 及R24 ，更佳分別獨立地為包含能量線硬化性的官能基之基。 R21 、R22 、R23 及R24 較佳分別獨立地為具有1個以上的前述通式(11)表示之乙二醇單位，且包含能量線硬化性之官能基之基。 R21 、R22 、R23 及R24 更佳分別獨立地為前述通式(11A)表示之基。 能量線硬化性樹脂(a1)，較佳以下述通式(15)表示。
Figure 02_image017
(前述通式(15)中， R25 、R26 、R27 及R28 係分別獨立地為前述能量線硬化性樹脂之分子中的其他原子或基， m21、m22、m23及m24係分別獨立地為1以上)。 R25 、R26 、R27 及R28 較佳當中至少1者為包含能量線硬化性的官能基之基，R25 、R26 、R27 及R28 ，更佳分別獨立地為包含能量線硬化性的官能基之基。 黏著劑層，相對於該黏著劑層之固體成分總量而言，較佳含有15質量%以上、55質量%以下；更佳含有20質量%以上、48質量%以下；又更佳含有24質量%以上、48質量%以下之能量線硬化性樹脂(a1)。 黏著劑層藉由含有15質量%以上、55質量%以下的能量線硬化性樹脂(a1)，更容易提高排列性、亦更容易抑制黏著劑殘留。 黏著劑層藉由含有20質量%以上之能量線硬化性樹脂(a1)，容易提高排列性。 黏著劑層藉由含有48質量%以下之能量線硬化性樹脂(a1)，將黏著薄片捲繞為滾筒狀時，黏著劑不易由滾筒端部滲出。 能量線硬化性樹脂(a1)所具有的乙二醇單位之總數MEG ，與能量線硬化性樹脂(a1)所具有的能量線硬化性之官能基之總數MUV 之比MEG /MUV ，較佳為1以上、15以下。 黏著劑層含有24質量%以上之能量線硬化性樹脂(a1)，且MEG /MUV 為9以上時，即使於擴展步驟之擴張量大，亦顯示優良的排列性。 能量線硬化性樹脂(a1)，較佳為(甲基)丙烯酸系樹脂。 能量線硬化性樹脂(a1)，較佳為紫外線硬化性樹脂、更佳為紫外線硬化性之(甲基)丙烯酸系樹脂。 能量線硬化性樹脂(a1)，為受到能量線照射時會聚合硬化的樹脂。能量線例如可列舉紫外線及電子束等。 能量線硬化性樹脂(a1)，例如亦可使用三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯，及1,6-己二醇二丙烯酸酯等之丙烯酸酯、二環戊二烯二甲氧基二丙烯酸酯，及丙烯酸異莰酯等之含環狀脂肪族骨架之丙烯酸酯，以及聚乙二醇二丙烯酸酯、寡酯丙烯酸酯、胺基甲酸酯丙烯酸酯寡聚物、環氧基改質丙烯酸酯、聚醚丙烯酸酯，及依康酸寡聚物等之丙烯酸酯系化合物。 能量線硬化性樹脂(a1)，可1種單獨使用或組合2種以上使用。 能量線硬化性樹脂(a1)之分子量，較佳為100以上、更佳為300以上。 能量線硬化性樹脂(a1)之分子量，較佳為30000以下、更佳為15000以下。 能量線硬化性樹脂(a1)之分子量若為100以上，則可防止由黏著劑中進行相分離，維持膠帶之保管安定性。 能量線硬化性樹脂(a1)之分子量若為30000以下，則可維持與其他材料之相溶性。 又，能量線硬化性樹脂(a1)之重量平均分子量亦佳為10000以下。能量線硬化性樹脂(a1)之重量平均分子量若為10000以下，則容易兼備黏著劑之伸張性與硬化性。 重量平均分子量，可藉由凝膠滲透層析(GPC)法，由標準聚苯乙烯換算值得到。 •光聚合起始劑(C) 黏著劑層含有紫外線硬化性之化合物(例如紫外線硬化性樹脂)時，黏著劑層較佳含有光聚合起始劑(C)。 黏著劑層藉由含有光聚合起始劑(C)，可使聚合硬化時間及光線照射量為少。 光聚合起始劑(C)，具體而言，可列舉二苯甲酮、苯乙酮、苯偶姻、苯偶姻甲基醚、苯偶姻乙基醚、苯偶姻異丙基醚、苯偶姻異丁基醚、苯偶姻安息香酸、苯偶姻安息香酸甲酯、苯偶姻二甲基縮酮、2,4-二乙基噻噸酮、1-羥基環己基苯基酮、苄基二苯基硫醚、四甲基秋蘭姆單硫醚、偶氮二異丁腈、二苯乙二酮、聯苄、聯乙醯、β-氯蒽醌、(2,4,6-三甲基苄基二苯基)膦氧化物、2-苯并噻唑-N,N-二乙基二硫代胺基甲酸酯、寡{2-羥基-2-甲基-1-[4-(1-丙烯基)苯基]丙酮}，及2,2-二甲氧基-1,2-二苯基乙烷-1-酮等。此等光聚合起始劑(C)可1種單獨使用、亦可合併使用2種以上。 光聚合起始劑(C)，當於黏著劑層中摻合能量線硬化性樹脂(a1)及(甲基)丙烯酸系共聚物(b1)的情況時，相對於能量線硬化性樹脂(a1)及(甲基)丙烯酸系共聚物(b1)之合計量100質量份而言，較佳以0.1質量份以上之量使用、更佳以0.5質量份以上之量使用。 又，光聚合起始劑(C)，當於黏著劑層中摻合能量線硬化性樹脂(a1)及(甲基)丙烯酸系共聚物(b1)的情況時，相對於能量線硬化性樹脂(a1)及(甲基)丙烯酸系共聚物(b1)之合計量100質量份而言，較佳以10質量份以下之量使用、更佳以6質量份以下之量使用。 黏著劑層，於上述成分以外亦可適當含有其他成分。其他成分例如可列舉交聯劑(E)、抗靜電劑、抗氧化劑，及著色劑等。 •交聯劑(E) 交聯劑(E)可使用具有與(甲基)丙烯酸系共聚物(b1)等所具有的官能基之反應性的多官能性化合物。如此的多官能性化合物之例子，可列舉異氰酸酯化合物、環氧化合物、胺化合物、三聚氰胺化合物、氮丙啶化合物、肼化合物、醛化合物、噁唑啉化合物、金屬烷氧化物化合物、金屬螯合化合物、金屬鹽、銨鹽，及反應性酚樹脂等。 交聯劑(E)之摻合量，相對於(甲基)丙烯酸系共聚物(b1)100質量份而言，較佳為0.01質量份以上、更佳為0.03質量份以上、又更佳為0.04質量份以上。 又，交聯劑(E)之摻合量，相對於(甲基)丙烯酸系共聚物(b1)100質量份而言，較佳為8質量份以下、更佳為5質量份以下、又更佳為3.5質量份以下、又再更佳為2.1質量份以下。 黏著劑層之厚度並無特殊限定。黏著劑層之厚度，例如較佳為10μm以上、更佳為20μm以上。又，黏著劑層之厚度，較佳為150μm以下、更佳為100μm以下。 (基材) 基材較佳具有第一基材面，及與第一基材面相反側之第二基材面。 本實施形態之黏著薄片中，本實施形態之黏著劑層，較佳設置於第一基材面及第二基材面之一面，且較佳於另一面未設置黏著劑層。 就容易大幅延伸的觀點，基材之材料較佳為熱可塑性彈性體或橡膠系材料、更佳為熱可塑性彈性體。 又，基材之材料，就容易大幅延伸的觀點，較佳使用玻璃轉移溫度(Tg)比較低的樹脂。如此的樹脂之玻璃轉移溫度(Tg)，較佳為90℃以下、更佳為80℃以下、又更佳為70℃以下。 熱可塑性彈性體，可列舉胺基甲酸酯系彈性體、烯烴系彈性體、氯乙烯系彈性體、聚酯系彈性體、苯乙烯系彈性體、丙烯酸系彈性體，及醯胺系彈性體等。熱可塑性彈性體，可1種單獨或組合2種以上使用。熱可塑性彈性體，就容易大幅延伸之觀點，較佳使用胺基甲酸酯系彈性體。 胺基甲酸酯系彈性體，一般而言係使長鏈多元醇、鏈延長劑，及二異氰酸酯反應而得。胺基甲酸酯系彈性體，包含具有由長鏈多元醇所衍生的構成單位之軟質段，與具有由鏈延長劑與二異氰酸酯之反應而得的聚胺基甲酸酯構造之硬質段。 將胺基甲酸酯系彈性體依長鏈多元醇之種類來分類時，係分為聚酯系聚胺基甲酸酯彈性體、聚醚系聚胺基甲酸酯彈性體，及聚碳酸酯系聚胺基甲酸酯彈性體等。胺基甲酸酯系彈性體，可1種單獨或組合2種以上使用。本實施形態中，胺基甲酸酯系彈性體，就容易大幅延伸之觀點，較佳為聚酯系聚胺基甲酸酯彈性體或聚醚系聚胺基甲酸酯彈性體。 長鏈多元醇之例子，可列舉內酯系聚酯多元醇，及己二酸酯系聚酯多元醇等之聚酯多元醇；聚丙烯(乙烯)多元醇，及聚四亞甲基醚二醇等之聚醚多元醇；聚碳酸酯多元醇等。本實施形態中，長鏈多元醇，就容易大幅延伸之觀點，較佳為己二酸酯系聚酯多元醇。 二異氰酸酯之例子，可列舉2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、4,4’-二苯基甲烷二異氰酸酯，及六亞甲基二異氰酸酯等。本實施形態中，就容易大幅延伸之觀點，二異氰酸酯較佳為六亞甲基二異氰酸酯。 鏈延長劑，可列舉低分子多元醇(例如1,4-丁二醇及1,6-己二醇等)，及芳香族二胺等。此等之中，就容易大幅延伸之觀點，較佳使用1,6-己二醇。 烯烴系彈性體，可列舉包含選自由乙烯•α-烯烴共聚物、丙烯•α-烯烴共聚物、丁烯•α-烯烴共聚物、乙烯•丙烯•α-烯烴共聚物、乙烯•丁烯•α-烯烴共聚物、丙烯•丁烯-α烯烴共聚物、乙烯•丙烯•丁烯-α•烯烴共聚物、苯乙烯•異戊二烯共聚物，及苯乙烯•乙烯•丁烯共聚物所成之群的至少1種樹脂之彈性體。烯烴系彈性體，可1種單獨或組合2種以上使用。 烯烴系彈性體之密度並無特殊限定。例如，烯烴系彈性體之密度，較佳為0.860g/cm3 以上、未達0.905g/cm3 ；更佳為0.862g/cm3 以上、未達0.900g/cm3 ；特佳為0.864g/cm3 以上、未達0.895g/cm3 。烯烴系彈性體之密度藉由滿足上述範圍，基材當將作為被黏著體之半導體晶圓貼附於黏著薄片時之凹凸追隨性等優良。 烯烴系彈性體，在用以形成該彈性體的全部單體當中，包含烯烴系化合物之單體的質量比率(本說明書中亦稱為「烯烴含有率」)較佳為50質量%以上、100質量%以下。 烯烴含有率過低時，作為包含來自烯烴之構造單位的彈性體之性質不易出現，基材不易顯示柔軟性及橡膠彈性。 就安定地得到柔軟性及橡膠彈性之觀點，烯烴含有率較佳為50質量%以上、更佳為60質量%以上。 苯乙烯系彈性體，可列舉苯乙烯-共軛二烯共聚物，及苯乙烯-烯烴共聚物等。苯乙烯-共軛二烯共聚物之具體例，可列舉苯乙烯-丁二烯共聚物、苯乙烯-丁二烯-苯乙烯共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯共聚物、苯乙烯-異戊二烯共聚物、苯乙烯-異戊二烯-苯乙烯共聚物(SIS)、苯乙烯-乙烯-異戊二烯-苯乙烯共聚物等之未氫化苯乙烯-共軛二烯共聚物、苯乙烯-乙烯/丙烯-苯乙烯共聚物(SEPS、苯乙烯-異戊二烯-苯乙烯共聚物之氫化物)，及苯乙烯-乙烯-丁烯-苯乙烯共聚物(SEBS、苯乙烯-丁二烯共聚物之氫化物)等之氫化苯乙烯-共軛二烯共聚物等。又，工業上而言，苯乙烯系彈性體，可列舉Tufprene(旭化成股份有限公司製)、Kraton(Kraton Polymer Japan股份有限公司製)、住友TPE-SB(住友化學股份有限公司製)、Epofriend(Daicel股份有限公司製)、Rabalon(三菱化學股份有限公司製)、Septon(Kuraray股份有限公司製)，及Tuftec(旭化成股份有限公司製)等之商品名。苯乙烯系彈性體，可為氫化物亦可為未氫化物。苯乙烯系彈性體，可1種單獨或組合2種以上使用。 橡膠系材料，例如可列舉天然橡膠、合成異戊二烯橡膠(IR)、丁二烯橡膠(BR)、苯乙烯-丁二烯橡膠(SBR)、氯丁二烯橡膠(CR)、丙烯腈-丁二烯共聚合橡膠(NBR)、丁基橡膠(IIR)、鹵化丁基橡膠、丙烯酸橡膠、胺基甲酸酯橡膠，及多硫化橡膠等。橡膠系材料，可此等之1種單獨使用或組合2種以上使用。 基材亦可為將含有如上述之材料(例如熱可塑性彈性體或橡膠系材料)的薄膜層合複數層而得的層合薄膜。又，基材亦可為將含有如上述之材料(例如熱可塑性彈性體或橡膠系材料)的薄膜與其他薄膜層合而得的層合薄膜。 基材在以上述樹脂系材料為主材料之薄膜內，亦可含有添加劑。 添加劑例如可列舉顏料、染料、難燃劑、可塑劑、抗靜電劑、潤滑劑，及填料等。顏料例如可列舉二氧化鈦，及碳黑等。又，填料例示有如三聚氰胺樹脂之有機系材料、如發煙二氧化矽之無機系材料，及如鎳粒子之金屬系材料。如此的添加劑之含量並無特殊限定，較佳為在基材可發揮所期望之機能的範圍內。 以提高與層合於第一基材面及第二基材面之至少任一者的黏著劑層之密合性為目的，基材亦可依期望於單面或兩面實施表面處理，或底塗劑處理。表面處理可列舉氧化法，及凹凸化法等。底塗劑處理可列舉於基材表面形成底塗劑層之方法。氧化法例如可列舉電暈放電處理、電漿放電處理、鉻氧化處理(濕式)、火焰處理、熱風處理、臭氧處理，及紫外線照射處理等。凹凸化法例如可列舉噴砂法，及噴塗處理法等。 黏著劑層含有能量線硬化性黏著劑時，基材較佳具有對能量線之透過性。使用紫外線作為能量線時，基材較佳對紫外線具有透過性。使用電子束作為能量線時，基材較佳具有電子束之透過性。 基材之厚度，只要黏著薄片於所期望之步驟中可適切地發揮機能，則不限定。基材之厚度較佳為20μm以上、更佳為40μm以上。又，基材之厚度較佳為250μm以下、更佳為200μm以下。 又，於基材之第一基材面或第二基材面的面內方向，以2cm間隔測定複數部位之厚度時，基材厚度之標準偏差較佳為2μm以下、更佳為1.5μm以下、又更佳為1μm以下。該標準偏差藉由成為2μm以下，黏著薄片具有精度高的厚度，可將黏著薄片均勻延伸。 於23℃下，基材之MD方向及CD方向的拉伸彈性率分別為10MPa以上、350MPa以下，於23℃下，基材之MD方向及CD方向的100%應力，分別為3MPa以上、20MPa以下為佳。 拉伸彈性率及100%應力藉由為上述範圍，可將黏著薄片大幅延伸。 基材之100%應力為如下所得之值。由基材切出100mm(長度方向)×15mm(寬度方向)之大小的試驗片。將所切出之試驗片之長度方向的兩端，以夾具夾住，使夾具間之長度成為50mm。以夾具將試驗片夾住後，以速度200mm/min於長度方向拉伸，讀取夾具間之長度成為100mm時之拉伸力之測定值。基材之100%應力，係藉由將所讀取之拉伸力的測定值除以基材之截面積而得之值。基材之截面積，係以寬度方向長度15mm×基材(試驗片)之厚度而算出。該切出，係以基材製造時之流動方向(MD方向)或直交於MD方向之方向(CD方向)與試驗片之長度方向一致的方式進行。再者，該拉伸試驗中，試驗片之厚度並無特別限制，可與作為試驗對象之基材厚度相同。 於23℃下，基材之MD方向及CD方向之斷裂伸度，較佳分別為100%以上。 基材之MD方向及CD方向之斷裂伸度，藉由分別為100%以上，可將黏著薄片大幅延伸，而不產生斷裂。 基材之拉伸彈性率(MPa)及基材之斷裂伸度(%)，可如下述般測定。將基材切斷為15mm×140mm而得到試驗片。對於該試驗片，根據JIS K7161：2014及JIS K7127：1999，測定於23℃之斷裂伸度及拉伸彈性率。具體而言，將上述試驗片，以拉伸試驗機(島津製作所股份有限公司製，製品名「Autograph AG-IS 500N」)，設定為夾頭間距離100mm後，以200mm/min之速度進行拉伸試驗，測定斷裂伸度(%)及拉伸彈性率(MPa)。再者，測定係於基材製造時之流動方向(MD)及與其直交之方向(CD)雙方進行。 (黏著薄片之物性) 使本實施形態之黏著薄片，於第一方向、與第一方向相反方向之第二方向、相對於第一方向為鉛直方向之第三方向，及與第三方向相反方向之第四方向伸長，當伸長前之黏著薄片之面積S1，與伸長後之黏著薄片之面積S2之面積比(S2/S1)×100為300%時，基材及黏著劑層較佳為不會斷裂。第一方向、第二方向、第三方向及第四方向，較佳各自例如與後述2軸延伸之+X軸方向、-X軸方向、+Y軸方向，及-Y軸方向之4個方向對應。用以於4個方向伸長之裝置，例如可列舉後述擴展裝置。 (剝離薄片) 本實施形態之黏著薄片，在直到將黏著劑層之黏著面貼附於被黏著體(例如半導體晶片等)為止之間，亦能夠以保護黏著面為目的，於黏著面層合剝離薄片。剝離薄片之構成為任意。剝離薄片之例子，例示有經剝離劑等剝離處理之塑膠薄膜。 塑膠薄膜之具體例，可列舉聚酯薄膜，及聚烯烴薄膜。聚酯薄膜，例如可列舉聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯，或聚萘二甲酸乙二酯等之薄膜。聚烯烴薄膜，例如可列舉聚丙烯，或聚乙烯等之薄膜。 剝離劑可使用聚矽氧系、氟系，及長鏈烷基系等。此等剝離劑之中，較佳為價格便宜且可得到安定之性能的聚矽氧系。 剝離薄片之厚度並無特殊限定。剝離薄片之厚度，通常為20μm以上、250μm以下。 (黏著薄片之製造方法) 本實施形態之黏著薄片，可與以往的黏著薄片同樣地製造。 黏著薄片之製造方法，若可將前述黏著劑層層合於基材之一面，則不特別詳細限定。 黏著薄片之製造方法的一例，可列舉如下之方法。首先，調製含有構成黏著劑層之黏著性組成物，及依期望進一步含有溶劑或分散媒的塗覆液。接著將塗覆液於基材之一面上藉由塗佈手段塗佈而形成塗膜。塗佈手段例如可列舉模塗佈器、淋幕式塗佈器、噴霧塗佈器、狹縫塗佈器，及刀式塗佈器等。接著，可藉由將該塗膜乾燥而形成黏著劑層。塗覆液只要係可進行塗佈，其性狀並無特殊限定。塗覆液係有含有用以形成黏著劑層之成分作為溶質的情況、亦有含有用以形成黏著劑層之成分作為分散質的情況。 又，黏著薄片之製造方法之別的一例，可列舉如下之方法。首先，於前述剝離薄片之剝離面上塗佈塗覆液而形成塗膜。接著，使塗膜乾燥，形成包含黏著劑層與剝離薄片之層合體。接著，可於該層合體之黏著劑層中與剝離薄片側之面相反側之面上貼附基材，得到黏著薄片與剝離薄片之層合體。該層合體中之剝離薄片，可作為工程材料剝離，亦可保護黏著劑層直到於黏著劑層貼附被黏著體(例如半導體晶片及半導體晶圓等)為止。 塗覆液含有交聯劑時，可藉由改變塗膜之乾燥條件(例如溫度及時間等)，或藉由另外進行加熱處理，進行塗膜內之(甲基)丙烯酸系共聚物(b1)與交聯劑之交聯反應，於黏著劑層內以所期望之存在密度形成交聯構造。為了充分進行該交聯反應，亦可在藉由上述方法等於基材層合黏著劑層之後，將所得之黏著薄片例如在23℃、相對濕度50%之環境下進行數日靜置之硬化。 本實施形態之黏著薄片之厚度，較佳為30μm以上、更佳為50μm以上。又，黏著薄片之厚度，較佳為400μm以下、更佳為300μm以下。 [黏著薄片之使用方法] 本實施形態之黏著薄片，可貼合於各種被黏著體，因此可應用本實施形態之黏著薄片之被黏著體並無特殊限定。例如，被黏著體較佳為半導體晶片及半導體晶圓。 本實施形態之黏著薄片，例如可使用於半導體加工用。 進一步，本實施形態之黏著薄片，可使用於擴大貼合於單面之複數個半導體晶片之間隔。 複數個半導體晶片之擴張間隔，係依賴於半導體晶片之尺寸，因此無特殊限制。本實施形態之黏著薄片，較佳為使用於將貼合於黏著薄片之單面的複數個半導體晶片中之相鄰的半導體晶片相互之間隔擴大200μm以上。再者，該半導體晶片相互之間隔的上限並無特殊限制。該半導體晶片相互之間隔的上限例如可為6000μm。 又，本實施形態之黏著薄片，亦可使用於至少藉由2軸延伸，擴大層合於黏著薄片單面之複數個半導體晶片之間隔的情況。此時，黏著薄片例如係於彼此直交之X軸及Y軸中的+X軸方向、-X軸方向、+Y軸方向及-Y軸方向之4個方向賦予張力而被延伸，更具體而言，係於基材中之MD方向及CD方向各自被延伸。 如上述之2軸延伸，例如可使用於X軸方向及Y軸方向賦予張力的分離裝置來進行。此處，X軸及Y軸係為直交者，平行於X軸之方向中之1者設為+X軸方向、與該+X軸方向相反方向設為-X軸方向、平行於Y軸之方向中之1者設為+Y軸方向、與該+Y軸方向相反方向設為-Y軸方向。 上述分離裝置，較佳對黏著薄片於+X軸方向、-X軸方向、+Y軸方向及-Y軸方向之4個方向賦予張力，且針對該4個方向分別具備複數個保持手段，與該等所對應的複數個張力賦予手段。各方向中，保持手段及張力賦予手段之數目，雖亦依黏著薄片之大小而異，但例如可為3個以上、10個以下左右。 此處，例如在為了於+X軸方向賦予張力所具備的包含複數個保持手段與複數個張力賦予手段之群中，較佳為各自的保持手段，具備保持黏著薄片之保持構件，各自的張力賦予手段，使對應於該張力賦予手段之保持構件於+X軸方向移動，而對黏著薄片賦予張力。而複數個張力賦予手段，較佳分別獨立地設置為使保持手段於+X軸方向移動。又，在為了於-X軸方向、+Y軸方向及-Y軸方向分別賦予張力所具備的包含複數個保持手段與複數個張力賦予手段之3個群中，亦較佳具有同樣的構成。藉此，上述分離裝置，可於每個直交於各方向之方向的區域，對黏著薄片賦予不同大小之張力。 一般而言，使用4個保持構件將黏著薄片由+X軸方向、-X軸方向、+Y軸方向及-Y軸方向之4個方向分別保持，並於該4個方向延伸時，對於黏著薄片，除了此等4個方向以外，於此等之合成方向(例如+X軸方向與+Y軸方向之合成方向、+Y軸方向與-X軸方向之合成方向、-X軸方向與-Y軸方向之合成方向及-Y軸方向與+X軸方向之合成方向)亦會賦予張力。其結果，於黏著薄片之內側區域中的半導體晶片之間隔與外側區域中的半導體晶片之間隔可能產生差異。 但是，上述分離裝置，於+X軸方向、-X軸方向、+Y軸方向及-Y軸方向各自的方向中，複數個張力賦予手段可分別獨立地對黏著薄片賦予張力，因此可使黏著薄片以消除如上述之黏著薄片的內側與外側之間隔的差異的方式進行延伸。 其結果，可正確地調整半導體晶片之間隔。 上述分離裝置，較佳進一步具備測定半導體晶片之相互間隔的測定手段。此處，上述張力賦予手段，較佳設置為可基於測定手段之測定結果，使複數個保持構件個別地移動。上述分離裝置藉由具備測定手段，可基於以上述測定手段所得之半導體晶片之間隔的測定結果，進一步調整該間隔，結果可更正確地調整半導體晶片之間隔。 再者，上述分離裝置中，保持手段可列舉夾頭手段及減壓手段。夾頭手段例如可列舉機械夾頭及夾頭汽缸等。減壓手段例如可列舉減壓泵及真空抽氣器等。又，上述分離裝置中，保持手段，亦可為以接著劑或磁力等而支持黏著薄片之構成。又，夾頭手段中之保持構件，例如可使用具有如下構成的保持構件：具備將黏著薄片自下方支持的下支持構件、被下支持構件所支持的驅動機器，與被驅動機器之輸出軸支持，藉由驅動驅動機器可將黏著薄片自上方按壓的上支持構件之構成。該驅動機器，例如可列舉電動機器及致動器等。電動機器例如可列舉旋動馬達、直動馬達、線性馬達、單軸機器人及多關節機器人等。致動器例如可列舉空氣汽缸、油壓汽缸、無桿汽缸及旋轉汽缸等。 又，上述分離裝置中，張力賦予手段亦可具備驅動機器，並藉由該驅動機器使保持構件移動。張力賦予手段所具備的驅動機器，可使用與上述保持構件所具備的驅動機器相同之驅動機器。例如，張力賦予手段，可為具備作為驅動機器之直動馬達，與存在於直動馬達與保持構件之間的輸出軸，且經驅動之直動馬達透過輸出軸使保持構件移動之構成。 使用本實施形態之黏著薄片來擴大半導體晶片之間隔時，可由半導體晶片彼此接觸的狀態，或半導體晶片之間隔幾乎未被擴大的狀態下擴大其間隔，或亦可由半導體晶片彼此之間隔已擴大到特定間隔的狀態下，進一步擴大其間隔。 由半導體晶片彼此接觸的狀態，或半導體晶片之間隔幾乎未被擴大的狀態下擴大其間隔的情況，例如可藉由於切割薄片上分割半導體晶圓得到複數個半導體晶片後，由該切割薄片將複數個半導體晶片轉印於本實施形態之黏著薄片，接著擴大該半導體晶片之間隔。或亦可於本實施形態之黏著薄片上分割半導體晶圓得到複數個半導體晶片後，擴大該半導體晶片之間隔。 由半導體晶片彼此之間隔已擴大到特定間隔的狀態下，進一步擴大其間隔的情況，可使用其他黏著薄片、較佳為本實施形態之黏著薄片(第一延伸用黏著薄片)來將半導體晶片彼此的間隔擴大到特定間隔後，由該薄片(第一延伸用黏著薄片)將半導體晶片轉印於本實施形態之黏著薄片(第二延伸用黏著薄片)，接著，藉由延伸本實施形態之黏著薄片(第二延伸用黏著薄片)，可進一步擴大半導體晶片之間隔。再者，如此的半導體晶片之轉印與黏著薄片之延伸，亦可重複複數次，至半導體晶片之間隔成為所期望之距離為止。 [半導體晶圓等級封裝(FO-WLP)之製造方法] 本實施形態之黏著薄片，較佳使用於要求將半導體晶片之間隔較大幅地分離的用途，如此的用途之例子較佳可列舉扇出型之半導體晶圓等級封裝(FO-WLP)之製造方法。如此的FO-WLP之製造方法之例子，可列舉以下所說明之第一態樣。 (第一態樣) 以下說明使用本實施形態之黏著薄片的FO-WLP之製造方法之第一態樣。再者，該第一態樣中，本實施形態之黏著薄片，係作為後述第一黏著薄片10使用。 圖1A中，顯示第一黏著薄片10，與貼合於第一黏著薄片10之複數個半導體晶片CP。 第一黏著薄片10，具有第一基材11與第一黏著劑層12。第一基材11係對應於本實施形態之黏著薄片之基材。第一黏著劑層12係對應於本實施形態之黏著薄片之黏著劑層。第一基材11，具有第一基材面11A，及與第一基材面11A相反側之第二基材面11B。第一黏著劑層12係設置於第一基材面11A。於第二基材面11B並未設置黏著劑層。 本實施形態中，第一黏著薄片10係作為擴展薄片使用。 半導體晶片CP，具有電路面W1，及與電路面W1相反側之背面W3。於電路面W1，係形成有電路W2。 複數個半導體晶片CP，例如，較佳藉由以切割將半導體晶圓單片化而形成。 切割較佳對貼合於切割薄片等之半導體晶圓實施。切割可使用切割機(dicing saw)等之切斷手段。 切割亦可對半導體晶圓照射雷射光來進行，以取代使用上述切斷手段。例如，可藉由雷射光照射，將半導體晶圓完全分割，單片化為複數個半導體晶片。 或者，亦可藉由雷射光照射於半導體晶圓內部形成改質層後，於後述擴展步驟中拉伸黏著薄片，使半導體晶圓於改質層的位置斷裂，而單片化為半導體晶片CP。如此地單片化為半導體晶片之方法有稱為隱形切割(stealth dicing)者。隱形切割的情況，雷射光之照射，例如係照射紅外區域之雷射光，使聚焦於半導體晶圓之內部所設定的焦點。又，此等之方法中，雷射光之照射，可由半導體晶圓之任意側進行。 切割後，較佳將複數個半導體晶片CP一次轉印於擴展薄片。 本實施形態中，經單片化之複數個半導體晶片CP，係由切割薄片轉印於第一黏著薄片10。複數個半導體晶片CP，係將其電路面W1朝向第一黏著劑層12而被貼合。 圖1B中，顯示說明將保持複數個半導體晶片CP之第一黏著薄片10予以拉伸之步驟(以下有稱為「擴展步驟」者)的圖。 將第一黏著薄片10拉伸，擴大複數個半導體晶片CP間之間隔。又，進行隱形切割時，可藉由拉伸第一黏著薄片10，使半導體晶圓於改質層的位置斷裂，單片化為複數個半導體晶片CP，並且擴大複數個半導體晶片CP間之間隔。 於擴展步驟拉伸第一黏著薄片10之方法並無特殊限定。將第一黏著薄片10拉伸之方法，例如可列舉壓抵環狀或圓狀之擴展器(expander)而拉伸第一黏著薄片10之方法，及使用把持構件等夾住第一黏著薄片10之外周部而拉伸之方法等。後者的方法，例如可列舉使用前述之分離裝置等進行2軸延伸之方法。此等之方法中就可更大幅地擴大半導體晶片CP間之間隔的觀點，尤佳為2軸延伸之方法。 如圖1B所示，擴展後之半導體晶片CP間之距離係為D1。距離D1係依賴於半導體晶片CP之尺寸故無特殊限制。距離D1例如以分別獨立地為200μm以上、6000μm以下為佳。 擴展步驟之後，係實施對第一黏著薄片10照射能量線，使第一黏著劑層12硬化之步驟(以下有稱為「能量線照射步驟」者)。第一黏著劑層12為紫外線硬化性時，能量線照射步驟中，係對第一黏著薄片10照射紫外線。藉由於擴展步驟之後使第一黏著劑層12硬化，延伸後之第一黏著薄片10的形狀保持性會提高。其結果，容易維持貼合於第一黏著劑層12之複數個半導體晶片CP的排列性。 圖2A中，顯示說明於擴展步驟之後，將複數個半導體晶片CP轉印於第二黏著薄片20之步驟(以下有稱為「轉印步驟」者)的圖。第一擴展步驟之後，係使第一黏著劑層12硬化，因此第一黏著劑層12之黏著力降低，容易將第一黏著薄片10由半導體晶片CP剝離。進一步地，由於第一黏著薄片10為本實施形態之黏著薄片，故可抑制半導體晶片CP之黏著劑殘留。 將第一黏著薄片10拉伸，擴大複數個半導體晶片CP之間隔，成為距離D1之後，於半導體晶片CP之背面W3貼合第二黏著薄片20。此處，該第二黏著薄片20，只要可保持複數個半導體晶片CP則無特殊限定。欲進一步擴張複數個半導體晶片CP間之距離D1時，第二黏著薄片20較佳使用擴展薄片、更佳使用本實施形態之黏著薄片。 第二黏著薄片20，具有第二基材21與第三黏著劑層22。 使用本實施形態之黏著薄片作為第二黏著薄片20時，第二基材21，係對應於本實施形態之黏著薄片之基材，第三黏著劑層22，係對應於本實施形態之黏著薄片之黏著劑層。 第二黏著薄片20，亦可與複數個半導體晶片CP一起貼合於第二環狀框架。此時，於第二黏著薄片20之第三黏著劑層22上，係載置第二環狀框架，並將之輕輕地按壓而固定。之後，將於第二環狀框架之環形狀內側所露出的第三黏著劑層22壓抵於半導體晶片CP之背面W3，於第二黏著薄片20固定複數個半導體晶片CP。 圖2B中顯示說明於第二黏著薄片20之貼合後，剝離第一黏著薄片10之步驟的圖。 將第二黏著薄片20貼合後，剝離第一黏著薄片10時，複數個半導體晶片CP之電路面W1會露出。剝離第一黏著薄片10之後亦以維持於擴展步驟中擴張的複數個半導體晶片CP間之距離D1為佳。 第二黏著薄片20為擴展薄片時，亦可實施於剝離第一黏著薄片10後，拉伸第二黏著薄片20之步驟(以下有稱為「第二擴展步驟」者)。此時，亦有將拉伸第一黏著薄片10之擴展步驟稱為第一擴展步驟者。 第二擴展步驟中，進一步擴大複數個半導體晶片CP間之間隔。 第二黏著薄片20為本實施形態之黏著薄片時，於擴張後之複數個半導體晶片CP的排列性會提高。 第二擴展步驟中拉伸第二黏著薄片20之方法並無特殊限定。例如，第二擴展步驟亦可與第一擴展步驟同樣地實施。 再者，第二擴展步驟後之半導體晶片CP間之間隔係稱為D2。距離D2係依賴於半導體晶片CP之尺寸故無特殊限制，但距離D2大於距離D1。距離D2例如較佳分別獨立地為200μm以上、6000μm以下。 圖2C中，顯示說明將貼合於第二黏著薄片20之複數個半導體晶片CP，轉印於第三黏著薄片30之步驟(以下有稱為「轉印步驟」者)的圖。第二黏著薄片20為本實施形態之黏著薄片時，可抑制半導體晶片CP之黏著劑殘留。 圖2C中，顯示不實施第二擴展步驟，即由第二黏著薄片20轉印於第三黏著薄片30之狀態。第三黏著薄片30，只要可保持複數個半導體晶片CP則無特殊限定。 由第二黏著薄片20轉印於第三黏著薄片30之複數個半導體晶片CP，較佳為維持半導體晶片CP間之距離D1。實施第二擴展步驟後，較佳為維持半導體晶片CP間之距離D2。 第一擴展步驟之後，可藉由重複轉印步驟及擴展步驟任意次數，使半導體晶片CP間之距離成為所期望之距離，使密封半導體晶片CP時之電路面的方向成為所期望之方向。 欲密封第三黏著薄片30上之複數個半導體晶片CP時，第三黏著薄片30，較佳使用密封步驟用之黏著薄片、更佳使用具有耐熱性之黏著薄片。 第三黏著薄片30，具有第三基材31與第四黏著劑層32。 又，使用具有耐熱性之黏著薄片作為第三黏著薄片30時，第三基材31及第四黏著劑層32，較佳分別以具有可耐密封步驟中所施加的溫度之耐熱性的材料所形成。第三黏著薄片30之別的態樣，可列舉具備第三基材、第三黏著劑層及第四黏著劑層之黏著薄片。該黏著薄片，於第三黏著劑層與第四黏著劑層之間包含第三基材，且於第三基材之兩面具有黏著劑層。 由第二黏著薄片20轉印於第三黏著薄片30之複數個半導體晶片CP，係使電路面W1朝向第四黏著劑層32而被貼合。 圖2D中，顯示說明使用密封構件60來密封複數個半導體晶片CP之步驟(以下有稱為「密封步驟」者)的圖。 本實施形態中，密封步驟，係於複數個半導體晶片CP被轉印於第三黏著薄片30之後實施。 密封步驟中，係以電路面W1被第三黏著薄片30保護的狀態，藉由將複數個半導體晶片CP以密封構件60被覆而形成密封體3。於複數個半導體晶片CP之間亦填充有密封構件60。由於藉由第三黏著薄片30被覆電路面W1及電路W2，因此可防止電路面W1被密封構件60被覆。 藉由密封步驟，得到各以特定距離分離之複數個半導體晶片CP被埋入於密封構件60之密封體3。密封步驟中，複數個半導體晶片CP，較佳在維持實施擴展步驟之後之距離的狀態下，藉由密封構件60被覆。 密封步驟之後，剝離第三黏著薄片30。半導體晶片CP之電路面W1及密封體3之與第三黏著薄片30接觸之面3A會露出。 由密封體3剝離黏著薄片之後，對該密封體3，依序進行形成與半導體晶片CP電性連接的再配線層之再配線層形成步驟，與將再配線層與外部端子電極予以電性連接之連接步驟。藉由再配線層形成步驟及與外部端子電極之連接步驟，半導體晶片CP之電路與外部端子電極係進行電性連接。 將連接有外部端子電極的密封體3以半導體晶片CP單位進行單片化。將密封體3單片化之方法並無特殊限定。藉由將密封體3單片化，製造半導體晶片CP單位之半導體封裝。連接扇出於半導體晶片CP之區域外的外部電極的半導體封裝，係作為扇出型之晶圓等級封裝(FO-WLP)而被製造。 依照本實施形態之黏著薄片，可抑制黏著劑殘留。因此，可適合地使用於如以上說明般，大幅擴大複數個半導體晶片之間隔，且有必要將擴張後之複數個半導體晶片轉印於別的構件之用途。 [實施形態之變化] 本發明不受上述實施形態任何限定。本發明在可達成本發明之目的之範圍，包含上述實施形態經變化的態樣等。 例如，半導體晶圓或半導體晶片中之電路等，不限定於圖示之排列或形狀等。半導體封裝中之與外部端子電極之連接構造等，也不限定於前述實施形態所說明的態樣。前述實施形態中，係舉製造FO-WLP型之半導體封裝的態樣為例來說明，但本發明亦可應用於製造扇入型之WLP等之其他半導體封裝的態樣。 上述第一態樣之FO-WLP之製造方法，亦可將一部分步驟變更或將一部分步驟省略。 前述實施形態中，係舉前述實施形態之黏著劑層設置於第一基材面及第二基材面之一面上，且另一面上未設置黏著劑層的態樣之黏著薄片為例來進行說明，但本發明不限定於如此的態樣。 例如，可列舉於基材之兩面上設置有黏著劑層的黏著薄片，至少一方之黏著劑層為前述實施形態之黏著劑層。 例如，圖4中顯示黏著薄片10A。黏著薄片10A，具有基材110、第一黏著劑層12與第二黏著劑層13。黏著薄片10A，於第一黏著劑層12與第二黏著劑層13之間包含基材110。 於基材110之第一基材面11A上，設置有第一黏著劑層12，於第二基材面11B上，設置有第二黏著劑層13。 基材110係與前述實施形態中之第一基材11相同。 第一黏著劑層12，係對應於前述實施形態之黏著薄片的黏著劑層。第二黏著劑層13並無特殊限定。 第一黏著劑層12及第二黏著劑層13之組成，可相同亦可相異。 第一黏著劑層12及第二黏著劑層13之厚度，可相同亦可相異。 [實施例] 以下列舉實施例以更詳細說明本發明。本發明不受此等實施例的任何限定。 [黏著薄片之製作] (實施例1) 使丙烯酸丁酯(BA)52質量份、甲基丙烯酸甲酯(MMA)20質量份，及丙烯酸2-羥基乙酯(2HEA)28質量份共聚合而得到丙烯酸系共聚物。調製對該丙烯酸系共聚物，加成甲基丙烯酸2-異氰酸基乙酯(昭和電工股份有限公司製、製品名「Karenz MOI」(註冊商標))之樹脂(壓克力A)之溶液(黏著劑主劑)。就加成率而言，相對於丙烯酸系共聚物之2HEA 100莫耳%而言，甲基丙烯酸2-異氰酸基乙酯係90莫耳%。 所得之樹脂(壓克力A)之重量平均分子量(Mw)為60萬、Mw/Mn為4.5。藉由凝膠滲透層析(GPC)法，測定以標準聚苯乙烯換算之重量平均分子量Mw及數平均分子量Mn，由各自之測定值求得分子量分布(Mw/Mn)。 對該黏著劑主劑，以如下所示比率添加能量線硬化性樹脂A(阪本藥品工業股份有限公司製、製品名「SA-TE60」)、光聚合起始劑(IGM Resins B.V.製、製品名「Omnirad 127D」)及交聯劑(TOYOCHEM股份有限公司製、TMP-TDI(甲苯二異氰酸酯之三羥甲基丙烷加成體)，進一步添加乙酸乙酯後，攪拌30分鐘，調製固體成分35.0質量%之黏著劑組成物A1。 黏著劑主劑   ：固體成分100質量份 能量線硬化性樹脂A：固體成分51.4質量份 光聚合起始劑：固體成分3.7質量份 交聯劑         ：固體成分0.2質量份 接著，將所調製之黏著劑組成物A1之溶液塗佈於聚對苯二甲酸乙二酯(PET)系剝離薄膜(琳得科股份有限公司製、製品名「PET752150」)，將塗膜於90℃乾燥90秒，進一步於100℃乾燥90秒，於剝離薄膜上形成厚度30μm之黏著劑層。 於該黏著劑層貼合胺基甲酸酯基材(倉敷紡績股份有限公司製，製品名「U-1490」，厚度100μm，硬度90度(A型))後，將於寬度方向之端部的不要部分予以切斷去除而製作黏著薄片SA1。 能量線硬化性樹脂之性質等示於表1。 (實施例2) 於實施例1之黏著薄片SA1之製作中，使用能量線硬化性樹脂B(阪本藥品工業股份有限公司製、製品名「SA-TE6」)，以取代能量線硬化性樹脂A(「SA-TE60」)，除此以外係與實施例1同樣方式地製作實施例2之黏著薄片SA2。 (實施例3) 於實施例1之黏著薄片SA1之製作中，使用能量線硬化性樹脂C(新中村化學工業股份有限公司製、製品名「ATM-35E」)，以取代能量線硬化性樹脂A(「SA-TE60」)，除此以外係與實施例1同樣方式地製作實施例3之黏著薄片SA3。 (實施例4) 於實施例1之黏著薄片SA1之製作中，使用能量線硬化性樹脂D(新中村化學工業股份有限公司製、製品名「A-GLY-9E」)，以取代能量線硬化性樹脂A(「SA-TE60」)，除此以外係與實施例1同樣方式地製作實施例4之黏著薄片SA4。 (比較例1) 於實施例1之黏著薄片SA1之製作中，使用能量線硬化性樹脂E(新中村化學工業股份有限公司製、製品名「A-DOD-N」)，以取代能量線硬化性樹脂A(「SA-TE60」)，除此以外係與實施例1同樣方式地製作比較例1之黏著薄片R-SA1。 (比較例2) 於實施例1之黏著薄片SA1之製作中，使用能量線硬化性樹脂F(三菱化學股份有限公司製、製品名「UV-5806」)，以取代能量線硬化性樹脂A(「SA-TE60」)，除此以外係與實施例1同樣方式地製作比較例2之黏著薄片R-SA2。 [黏著薄片之評價] 針對所製作之黏著薄片，進行以下之評價。評價結果示於表1。 (排列性之評價方法) 將實施例1~4以及比較例1~2所製作之黏著薄片切斷為210mm×210mm，得到試驗用黏著薄片。此時，係以切斷後之薄片的各邊，與黏著薄片中之基材的MD方向成為平行或垂直的方式切斷。 切割矽晶圓，以3mm×3mm尺寸之晶片於X軸方向成為7列，及於Y軸方向成為7列的方式，共切出49個晶片。 剝離試驗用黏著薄片之剝離薄膜，於所露出之黏著劑層的中心部，貼附如上述般切出之計49個晶片。此時，晶片於X軸方向排有7列，及於Y軸方向排有7列，晶片間之距離，X軸方向及Y軸方向均為35μm。 接著，將貼附有晶片之試驗用黏著薄片，設置於可2軸延伸之擴展裝置(分離裝置)。圖3中，顯示說明該擴展裝置100之平面圖。圖3中，X軸及Y軸係彼此直交的關係，該X軸之正方向稱+X軸方向、該X軸之負方向稱-X軸方向、該Y軸之正方向稱+Y軸方向、該Y軸之負方向稱-Y軸方向。試驗用黏著薄片200，係以各邊與X軸或Y軸成為平行的方式，設置於擴展裝置100。其結果，試驗用黏著薄片200中之基材之MD方向，係與X軸或Y軸成為平行。再者，圖3中，晶片係經省略。 如圖3所示，擴展裝置100，於+X軸方向、-X軸方向、+Y軸方向及-Y軸方向各自具備5個保持手段101(共20個保持手段101)。各方向中之5個保持手段101當中，保持手段101A位於兩端、保持手段101C位於中央、保持手段101B位於保持手段101A與保持手段101C之間。將試驗用黏著薄片200之各邊，以此等之保持手段101把持。 此處，如圖3所示，試驗用黏著薄片200之一邊為210mm。又，各邊之保持手段101彼此之間隔為40mm。又，試驗用黏著薄片200之一邊之端部(薄片之頂點)，與存在於該邊，且離該端部最近的保持手段101A之間隔為25mm。 •第1擴展試驗 接著，驅動保持手段101各自所對應的未圖示之複數個張力賦予手段，使保持手段101各自獨立地移動。將試驗用黏著薄片之四邊以夾具固定，於X軸方向及Y軸方向各自以5mm/s之速度，以200mm之擴張量將試驗用黏著薄片擴展。第1擴展試驗之結果，試驗用黏著薄片之面積，相對於擴展前，擴張為381%。本實施例中，有將該擴張量200mm之擴展試驗稱為第1擴展試驗的情況。第1擴展試驗後，實施例1~4之黏著薄片之基材及黏著劑層並未斷裂。 •第2擴展試驗 除了將前述第1擴展試驗中之X軸方向及Y軸方向之擴張量變更為350mm以外，係與第1擴展試驗同樣地擴展試驗用黏著薄片。第2擴展試驗之結果，試驗用黏著薄片之面積，相對於擴展前擴張為711%。本實施例中，有將該擴張量350mm之擴展試驗稱為第2擴展試驗者。再者，第2擴展試驗，係針對第1擴展試驗之結果，排列性評價為後述評價A之黏著薄片來實施。第2擴展試驗後，實施例1~3之黏著薄片之基材及黏著劑層並未斷裂。 藉由第1擴展試驗或第2擴展試驗擴張試驗用黏著薄片後，藉由環狀框架保持試驗用黏著薄片200之擴張狀態。 於保持擴張狀態的狀態下，基於晶片彼此之位置關係，算出晶片間距離之標準偏差，藉以評價排列性。具體而言，由各晶片之角落，求出晶片之中心，測定鄰接之晶片的中心間距離。由該中心間距離，減去晶片之邊之長度3mm，作為晶片間距離。試驗用黏著薄片上之晶片之位置，係使用CNC影像測定機(Mitutoyo股份有限公司製、製品名「Vision ACCEL」)測定。標準偏差係使用JMP公司製之數據分析軟體JMP13算出。排列性之評價基準係如下般設定。本實施例中，係將評價A或評價B判定為合格。 •排列性之評價基準 評價A：標準偏差100μm以下 評價B：標準偏差200μm以下 評價C：標準偏差201μm以上 (晶片浮起之評價方法) 藉由前述排列性之評價方法的說明中之第1擴展試驗來擴張試驗用黏著薄片後，藉由環狀框架保持試驗用黏著薄片200之擴張狀態。於保持擴張狀態之狀態下，越過試驗用黏著薄片200，使用數位顯微鏡(KEYENCE股份有限公司製、製品名「VHX-1000」)觀察晶片之黏著劑層側之面與黏著劑層的貼合狀態。晶片浮起之評價基準係如下般設定。本實施例中，將評價A判定為合格。 •晶片浮起之評價基準 評價A：全部之晶片未由黏著薄片浮起(晶片之端部未由黏著劑層分離)。 評價B：至少1個晶片由黏著薄片浮起(晶片之端部由黏著劑層分離)。 (黏著劑之滲出評價方法) 使用前述實施例或比較例中製作的黏著劑組成物、長條狀之剝離薄膜及胺基甲酸酯基材，製作長條狀之黏著薄片之滾筒樣品。接著，將由該滾筒樣品捲出的黏著薄片切斷為35mm寬度，將所切斷之黏著薄片25m的分量，捲繞於3吋之ABS芯，得到試驗用滾筒樣品。將該試驗用滾筒樣品於40℃恆溫槽靜置48小時，將切斷面之狀態進行觸診試驗。黏著劑之滲出之評價基準係如下般設定。本實施例中，將評價A判定為合格。 •滲出之評價基準 評價A：切斷面無黏性感 評價B：切斷面有黏性感 (SS特性：UV硬化前的斷裂伸度及應力) 僅層合實施例1~4以及比較例1~2之黏著薄片之黏著劑層，製作厚度200µm、寬度15mm、長度50mm之SS特性評價用樣品。之後，將SS特性評價用樣品以夾頭固定於將夾頭間距離調整為30mm之拉伸試驗機。將經夾頭固定的SS特性評價用樣品，以50mm/min之速度拉伸，記錄此時之位移及應力。基於所記錄的位移及應力，製成位移-應力曲線。拉伸試驗機係使用島津製作所股份有限公司製之製品名「Autograph AG-IS 500N」。 以SS特性評價用樣品斷裂時之位移作為斷裂伸度(單位：%)。表1中，記載為「＞2000」者，表示即使為位移2000%，SS特性評價用樣品亦未斷裂。 位移-應力曲線中，1500%位移時之應力(單位：MPa)示於表1。 SS特性之評價基準係如下般設定。本實施例中，將評價A判定為合格。 •SS特性之評價基準 評價A：斷裂伸度為1500%以上，且1500%位移時之應力為0.22MPa以下。 評價B：相當於斷裂伸度未達1500%的情況，以及1500%位移時之應力超過0.22MPa的情況之至少任一者。 (SS特性：UV硬化後的斷裂能) UV硬化後的斷裂能E(單位：J)，係基於JIS K7161：1994及JIS K 7127：1999藉由於23℃之拉伸試驗而得到。 首先，僅層合實施例1~4以及比較例1~2之黏著薄片之黏著劑層，製作厚度40μm、寬度15mm、長度150mm之UV硬化前的薄片狀黏著劑層。對該UV硬化前之薄片狀黏著劑層照射紫外線(UV)，製作UV硬化後之SS特性評價用樣品。 •紫外線照射條件：220mW/cm2 , 160mJ/cm2 之後，將UV硬化後之SS特性評價用樣品以夾頭固定於將夾頭間距離調整為100mm之拉伸試驗機。將經夾頭固定的UV硬化後之SS特性評價用樣品，以50mm/min之速度拉伸，記錄此時之位移及應力。基於所記錄的位移及應力，製成位移-應力曲線。拉伸試驗機係使用島津製作所股份有限公司製之製品名「Autograph AG-IS 500N」。 以UV硬化後之SS特性評價用樣品斷裂時的位移作為斷裂伸度(單位：%)。 UV硬化後的斷裂能E(單位：J)，係由下述式(A)，使用表計算軟體來計算。
Figure 02_image019
前述式(A)中，常數a為斷裂點位移(單位：mm)，f(x)為位移x(單位：mm)時之應力(單位：N)。斷裂能E之測定時的取樣速率係1次/0.05sec(20Hz)。 (黏著劑殘留之評價方法) 於前述排列性之評價中之第1擴展試驗將試驗用黏著薄片擴張後，以如下之照射條件照射紫外線。 •紫外線照射條件：220mW/cm2 , 160mJ/cm2 紫外線照射後，使用琳得科股份有限公司製UV硬化型膠帶D-218將晶片由試驗用黏著薄片剝離。 使用數位顯微鏡(KEYENCE股份有限公司製、製品名「VHX-1000」)以光學100倍來確認與黏著劑層鄰接的晶片表面。 作為黏著劑殘留有無之判定基準，係於1晶片內，若有1個以上黏著劑殘留，則計數為黏著劑殘留晶片。黏著劑殘留之評價基準係如下般設定。本實施例中，係將評價A或評價B判定為合格。 •黏著劑殘留之評價基準 評價A：全部晶片無黏著劑殘留 評價B：黏著劑殘留晶片之產生比例為40%以下 評價C：黏著劑殘留晶片之產生比例為41%以上
Figure 02_image021
表1中之記號之說明，係如以下所示。 EG：乙二醇 EG單元數MEG ：能量線硬化性樹脂每一分子所具有的乙二醇單位之總數 UV硬化性官能基之數目MUV ：能量線硬化性樹脂每一分子所具有的能量線(本實施例中，紫外線)。硬化性之官能基之總數 MEG /MUV ：每個能量線(UV)硬化性官能基之乙二醇(EG)單位數 如表1所示，實施例1~4之黏著薄片中，能量線照射後之黏著劑層單質的斷裂能為0.055J以上，因此實施例1~4之黏著薄片，為黏著劑殘留少的黏著薄片。Hereinafter, an embodiment of the present invention will be described. [Adhesive Sheet] The adhesive sheet of this embodiment has a base material and an adhesive layer. The shape of the adhesive sheet can take any shape such as tape shape (long strip form) and label shape (sheet form). (Adhesive layer) In the adhesive sheet of this embodiment, the adhesive layer contains an energy ray curable resin. The fracture energy of the simple substance of the adhesive layer after energy ray irradiation is above 0.055J. According to the adhesive sheet having the characteristics of the breaking energy of the simple substance of the adhesive layer after such energy ray irradiation, the adhesive residue can be suppressed. If the fracture energy is 0.055J or more, after the expansion step, when energy rays are irradiated to peel the wafer from the adhesive sheet, the adhesive layer is not easily broken and the adhesive is not likely to remain. In the adhesive sheet of this embodiment, the breaking energy of the simple substance of the adhesive layer after energy ray irradiation is preferably 0.065J or more. In the adhesive sheet of this embodiment, the breaking energy of the simple substance of the adhesive layer after energy ray irradiation is preferably 0.300J or less. The breaking energy of the simple substance of the adhesive layer after energy ray irradiation can be measured by the method described in the following examples. In the adhesive sheet of this embodiment, it is preferable that the fracture elongation in the displacement-stress curve of the single substance of the adhesive layer before the energy ray irradiation is 1500% or more, and the displacement in the displacement-stress curve of the single substance of the adhesive layer is 1500% When the stress is below 0.22MPa. According to such an adhesive sheet having an adhesive layer that has the characteristics of both elongation at break and stress, the alignment after the expansion in the expansion step is improved, and the floating of the wafer can be suppressed. In the expansion step, for example, when the gap between the semiconductor wafers before expansion is 35 μm, when the gap is expanded to 2000 μm by expansion, the adhesive layer will follow the base material and be greatly deformed. When the breaking elongation of the adhesive layer of the adhesive sheet of the present embodiment before energy ray irradiation is 1500% or more, even when the adhesive layer is greatly deformed due to such expansion, the adhesive layer can follow the substrate without breaking. Furthermore, when the stress in the displacement-stress curve of the simple substance of the adhesive layer is 1500%, when the stress is 0.22MPa or less, when the substrate deforms greatly by expansion, the restraint of restraining the deformation of the adhesive sheet by the semiconductor chip can be reduced. force. The surface of the semiconductor chip adjacent to the adhesive layer is fixed on the surface of the adhesive layer. When it is expanded, the adhesive layer is stretched to exert a restraining force that inhibits the deformation of the substrate. As a result, the deformation of the adhesive sheet becomes uneven. It is believed to impair the alignment of semiconductor wafers. Assuming that the binding force is zero, the adhesive sheet can be uniformly expanded. The greater the binding force becomes, the more the deformation of the adhesive sheet is concentrated near the gap between the semiconductor chips, and when the entire working area is considered, the binding force is concentrated at the end. Part of the semiconductor chip, the expansion itself becomes difficult. When the stress in the adhesive sheet of the present embodiment is 0.22 MPa or less, such a binding force can be reduced, and therefore, good alignment can be exhibited. When the stress in the displacement-stress curve of the simple substance of the adhesive layer exceeds 0.22 MPa when the displacement is 1500%, it will be affected by the binding force of the semiconductor chip, which will impair the alignment. In the adhesive sheet of this embodiment, when the displacement in the displacement-stress curve of the single substance of the adhesive layer is 1500%, the stress is preferably 0.17 MPa or less. According to the adhesive sheet with an adhesive layer with a stress of 0.17 MPa or less when the displacement is 1500%, even if the expansion amount in the expansion step is large, it also shows excellent alignment. In the adhesive sheet of this embodiment, when the displacement in the displacement-stress curve of the single substance of the adhesive layer is 1500%, the stress is preferably 0.0001 MPa or more. The stress at a displacement of 1500% can prevent the adhesive layer from becoming too soft by being above 0.0001 MPa. If the stress at a displacement of 1500% is above 0.0001 MPa, even if the expansion amount is large during the expansion step, it can prevent the adhesive from insufficient cohesive force and the adhesive sheet detached from the chuck of the expansion device. In the adhesive sheet of this embodiment, the breaking elongation of the simple substance of the adhesive layer after energy ray irradiation is preferably 6% or more. If the breaking elongation of the simple substance of the adhesive layer after energy ray irradiation is 6% or more, the adhesive layer can follow the deformation of the adhesive sheet when the semiconductor chip is picked up by the adhesive sheet, and as a result, the adhesive residue can be suppressed. The elongation at break in the displacement-stress curve of the adhesive layer and the stress when the displacement in the displacement-stress curve is 1500% can be measured by the method described in the following examples. In the adhesive sheet of the present embodiment, the adhesive contained in the adhesive layer is not particularly limited as long as the rupture of the simple substance of the adhesive layer after energy ray irradiation satisfies the aforementioned range. The method that can satisfy the aforementioned range of fracture energy, for example, is appropriately selected from the materials described below to blend the material (adhesive) constituting the adhesive layer. •Energy ray curable resin (a1) Energy ray curable resin (a1) is a resin that polymerizes and hardens when irradiated with energy rays. Examples of energy rays include ultraviolet rays and electron beams. The energy ray curable resin (a1) is preferably an ultraviolet curable resin. The energy ray curable resin (a1) has at least one energy ray curable functional group in the molecule. The energy-ray-curable functional group is preferably a functional group containing a carbon-carbon double bond, more preferably an acrylic group or a methacrylic group. The adhesive layer containing energy ray curable resin (a1) is hardened by energy ray irradiation, and the adhesive force is reduced. When it is desired to separate the adherend and the adhesive sheet, it can be easily separated by irradiating the adhesive layer with energy rays. Examples of energy ray curable resin (a1) include low molecular weight compounds having energy ray curable groups (monofunctional monomers, multifunctional monomers, monofunctional oligomers, and multifunctional oligomers ). The energy ray curable resin (a1) preferably has one or more ethylene glycol units represented by the following general formula (11).
Figure 02_image003
(In the aforementioned general formula (11), m is 1 or more). When the energy ray curable resin (a1) has two or more ethylene glycol units represented by the following general formula (11), the two or more m are the same or different from each other. In the aforementioned general formula (11), m is preferably 2 or more. The energy ray curable resin (a1) has a soft polyethylene glycol chain, the adhesive layer before hardening is easy to deform, the crosslinking density of the adhesive layer after hardening is moderately reduced, and the adhesive layer is not easy to break. The number of ethylene glycol units per molecule of the energy ray curable resin (a1) is preferably 3 or more, more preferably 5 or more. Furthermore, in one embodiment, the number of ethylene glycol units per molecule of the energy ray curable resin (a1) is also preferably 10 or more, more preferably 30 or more, and still more preferably 50 or more. The number of ethylene glycol units per molecule of the energy ray curable resin (a1) is preferably 100 or less, more preferably 90 or less, and still more preferably 80 or less. The energy-ray-curable resin (a1) further preferably has 3 or more energy-ray-curable functional groups, more preferably 4 or more. If the number of energy-ray-curable functional groups possessed by the energy-ray-curable resin (a1) is 3 or more, it is easier to suppress the adhesive residue. The energy ray curable resin (a1) preferably has a group in which the ethylene glycol unit represented by the general formula (11) and the energy ray curable functional group are directly bonded. The energy ray curable resin (a1) preferably has one or more groups containing the ethylene glycol unit represented by the following general formula (11A).
Figure 02_image005
(In the aforementioned general formula (11A), m is 1 or more, and R is a hydrogen atom or a methyl group). When the energy ray curable resin (a1) has the group represented by the aforementioned general formula (11A), the number of the group represented by the aforementioned general formula (11A) in one molecule is preferably 3 or more, more preferably 4 or more. If the number of groups represented by the aforementioned general formula (11A) in one molecule of the energy ray curable resin (a1) is 3 or more, it is easier to suppress the adhesive residue. When the energy ray curable resin (a1) has the group represented by the aforementioned general formula (11A), the number of groups represented by the aforementioned general formula (11A) in a molecule is preferably 10 or less, more preferably 9 or less, and more Preferably, it is 8 or less. The energy ray curable resin (a1) preferably further has one or more glycerin skeletons. The energy ray curable resin (a1) also preferably has a polyglycerin skeleton. The energy ray curable resin (a1) has a higher number of ether bonds than a carbon-carbon bond system such as a saturated hydrocarbon skeleton, and a polyfunctional glycerin skeleton, which makes the adhesive layer easier to deform and achieves good performance. The hardening. The energy ray curable resin (a1) is preferably represented by the following general formula (12).
Figure 02_image007
(In the aforementioned general formula (12), n is 1 or more, R 1 , R 2, and R 3 are each independently an atom or group in the molecule of the energy ray curable resin, and among R 1 , R 2 and R 3 At least one has at least one ethylene glycol unit represented by the aforementioned general formula (11)). When n is 1, the aforementioned general formula (12) is represented by the following general formula (12-1).
Figure 02_image009
(In the aforementioned general formula (12-1), R 1 , R 2 and R 3 are synonymous with R 1 , R 2 and R 3 in the aforementioned general formula (12)). When n is 4, the aforementioned general formula (12) is represented by the following general formula (12-4).
Figure 02_image011
(In the aforementioned general formula (12-4), R 1A , R 1B , R 1C and R 1D are independently synonymous with R 1 in the aforementioned general formula (12), and R 2 and R 3 are the same as the aforementioned general formula (12) R 2 and R 3 have the same meaning). R 1 , R 2 and R 3 preferably each independently have one or more ethylene glycol units represented by the aforementioned general formula (11). At this time, the numbers of ethylene glycol units in R 1 , R 2 and R 3 are the same or different from each other. Preferably, at least one of R 1 , R 2, and R 3 is a group containing an energy-ray-curable functional group, and R 1 , R 2 and R 3 are more preferably each independently including an energy-ray-curable functional group base. It is preferable that R 1 , R 2 and R 3 each independently have one or more ethylene glycol units represented by the aforementioned general formula (11) and include an energy-ray-curable functional group. More preferably, R 1 , R 2 and R 3 are each independently a group represented by the aforementioned general formula (11A). For example, in the energy ray curable resin (a1) represented by the aforementioned general formula (12-4), R 1A , R 1B , R 1C , R 1D , R 2 and R 3 each have an energy ray curable functional group At this time, the energy ray curable resin (a1) has 6 energy ray curable functional groups. The energy ray curable resin (a1) is preferably represented by the following general formula (13).
Figure 02_image013
(In the aforementioned general formula (13), n is 1 or more, R 11 , R 12, and R 13 are each independently other atoms or groups in the molecule of the energy ray curable resin, and m1, m2, and m3 are each independently The ground is 1 or more). In the aforementioned general formula (13), when n is 2 or more, two or more m1 are the same or different from each other, and two or more R 11 are the same or different from each other. Preferably, at least one of R 11 , R 12 and R 13 is a group containing an energy ray-curable functional group, and R 11 , R 12 and R 13 are more preferably each independently of an energy ray-curable functional group base. The energy ray curable resin (a1) is also preferably represented by the following general formula (14).
Figure 02_image015
(In the foregoing general formula (14), R 21 , R 22 , R 23 and R 24 are each independently other atoms or groups in the molecule of the energy ray curable resin, R 21 , R 22 , R 23 and R At least one of 24 has one or more ethylene glycol units represented by the aforementioned general formula (11)). R 21 , R 22 , R 23 and R 24 preferably each independently have one or more ethylene glycol units represented by the aforementioned general formula (11). At this time, the numbers of ethylene glycol units in R 21 , R 22 , R 23 and R 24 are the same or different from each other. Preferably, at least one of R 21 , R 22 , R 23 and R 24 is a group containing an energy ray-curable functional group, and R 21 , R 22 , R 23 and R 24 are more preferably each independently containing energy ray Hardenable functional group base. R 21 , R 22 , R 23, and R 24 are preferably groups each independently having one or more ethylene glycol units represented by the aforementioned general formula (11) and including an energy-ray-curable functional group. More preferably, R 21 , R 22 , R 23 and R 24 are each independently a group represented by the aforementioned general formula (11A). The energy ray curable resin (a1) is preferably represented by the following general formula (15).
Figure 02_image017
(In the aforementioned general formula (15), R 25 , R 26 , R 27 and R 28 are each independently other atoms or groups in the molecule of the energy ray curable resin, and m21, m22, m23 and m24 are each independently The ground is 1 or more). Preferably, at least one of R 25 , R 26 , R 27, and R 28 is a group containing an energy ray-curable functional group, and R 25 , R 26 , R 27 and R 28 are more preferably each independently including an energy ray Hardenable functional group base. The adhesive layer, with respect to the total solid content of the adhesive layer, preferably contains 15% by mass or more and 55% by mass or less; more preferably 20% by mass or more and 48% by mass or less; and more preferably 24% by mass % Or more and 48% by mass or less of energy ray curable resin (a1). When the adhesive layer contains 15% by mass or more and 55% by mass or less of the energy-ray curable resin (a1), it is easier to improve the alignment and it is easier to suppress the adhesive residue. The adhesive layer contains 20% by mass or more of the energy ray curable resin (a1), which can easily improve the alignment. The adhesive layer contains 48% by mass or less of the energy-ray curable resin (a1), and when the adhesive sheet is wound into a roll, the adhesive is not easy to ooze out from the end of the roll. The ratio of the total number of ethylene glycol units M EG of the energy ray curable resin (a1) to the total number of energy ray curable functional groups M UV of the energy ray curable resin (a1) M EG /M UV , Preferably 1 or more and 15 or less. When the adhesive layer contains 24% by mass or more of the energy-ray curable resin (a1), and M EG /M UV is 9 or more, even if the expansion amount in the expansion step is large, it shows excellent alignment. The energy ray curable resin (a1) is preferably a (meth)acrylic resin. The energy ray curable resin (a1) is preferably an ultraviolet curable resin, more preferably an ultraviolet curable (meth)acrylic resin. Energy ray curable resin (a1) is a resin that polymerizes and hardens when irradiated with energy rays. Examples of energy rays include ultraviolet rays and electron beams. Energy ray curable resin (a1), for example, trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, 1,4-Butanediol diacrylate, and 1,6-hexanediol diacrylate and other acrylates, dicyclopentadiene dimethoxy diacrylate, and isobornyl acrylate, etc. containing cyclic Aliphatic skeleton acrylate, as well as polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy modified acrylate, polyether acrylate, and itaconic acid oligomer Acrylate compounds such as polymers. The energy ray curable resin (a1) can be used singly or in combination of two or more kinds. The molecular weight of the energy ray curable resin (a1) is preferably 100 or more, more preferably 300 or more. The molecular weight of the energy ray curable resin (a1) is preferably 30,000 or less, more preferably 15,000 or less. If the molecular weight of the energy ray curable resin (a1) is 100 or more, it can prevent phase separation from the adhesive and maintain the storage stability of the tape. If the molecular weight of the energy ray curable resin (a1) is 30,000 or less, it can maintain compatibility with other materials. In addition, the weight average molecular weight of the energy ray curable resin (a1) is also preferably 10,000 or less. If the weight average molecular weight of the energy ray curable resin (a1) is 10,000 or less, it is easy to have both the stretchability and curability of the adhesive. The weight average molecular weight can be obtained from a standard polystyrene conversion value by the gel permeation chromatography (GPC) method. • Photopolymerization initiator (C) When the adhesive layer contains an ultraviolet curable compound (for example, an ultraviolet curable resin), the adhesive layer preferably contains a photopolymerization initiator (C). By containing the photopolymerization initiator (C), the adhesive layer can reduce the polymerization curing time and the amount of light irradiation. The photopolymerization initiator (C) specifically includes benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, Benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexyl phenyl ketone , Benzyl diphenyl sulfide, tetramethyl thiuram monosulfide, azobisisobutyronitrile, diphenyl ethylene dione, bibenzyl, biacetin, β-chloroanthraquinone, (2,4, 6-trimethylbenzyldiphenyl)phosphine oxide, 2-benzothiazole-N,N-diethyldithiocarbamate, oligo{2-hydroxy-2-methyl-1- [4-(1-propenyl)phenyl]acetone}, and 2,2-dimethoxy-1,2-diphenylethane-1-one, etc. These photopolymerization initiators (C) may be used singly or in combination of two or more kinds. The photopolymerization initiator (C), when the energy ray curable resin (a1) and the (meth)acrylic copolymer (b1) are blended into the adhesive layer, is compared to the energy ray curable resin (a1). For 100 parts by mass of the total amount of) and the (meth)acrylic copolymer (b1), it is preferably used in an amount of 0.1 parts by mass or more, and more preferably in an amount of 0.5 parts by mass or more. In addition, when the photopolymerization initiator (C) is blended with the energy ray curable resin (a1) and the (meth)acrylic copolymer (b1) in the adhesive layer, it is relative to the energy ray curable resin For 100 parts by mass of the total amount of (a1) and (meth)acrylic copolymer (b1), it is preferably used in an amount of 10 parts by mass or less, and more preferably in an amount of 6 parts by mass or less. The adhesive layer may contain other components as appropriate in addition to the above-mentioned components. Other components include, for example, a crosslinking agent (E), an antistatic agent, an antioxidant, and a coloring agent. •Crosslinking agent (E) As the crosslinking agent (E), a polyfunctional compound having reactivity with a functional group possessed by the (meth)acrylic copolymer (b1) or the like can be used. Examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, and metal chelate compounds. , Metal salts, ammonium salts, and reactive phenol resins. The blending amount of the crosslinking agent (E) is preferably 0.01 parts by mass or more, more preferably 0.03 parts by mass or more, and still more preferably, relative to 100 parts by mass of the (meth)acrylic copolymer (b1) 0.04 parts by mass or more. In addition, the blending amount of the crosslinking agent (E) is preferably 8 parts by mass or less, more preferably 5 parts by mass or less, and still more with respect to 100 parts by mass of the (meth)acrylic copolymer (b1) It is preferably 3.5 parts by mass or less, and still more preferably 2.1 parts by mass or less. The thickness of the adhesive layer is not particularly limited. The thickness of the adhesive layer is, for example, preferably 10 μm or more, more preferably 20 μm or more. In addition, the thickness of the adhesive layer is preferably 150 μm or less, more preferably 100 μm or less. (Substrate) The substrate preferably has a first substrate surface and a second substrate surface opposite to the first substrate surface. In the adhesive sheet of this embodiment, the adhesive layer of this embodiment is preferably provided on one of the first substrate surface and the second substrate surface, and preferably no adhesive layer is provided on the other surface. From the standpoint of being easily extended to a large extent, the material of the base material is preferably a thermoplastic elastomer or a rubber-based material, and more preferably a thermoplastic elastomer. In addition, from the viewpoint that the material of the substrate is easily extended to a large extent, it is preferable to use a resin with a relatively low glass transition temperature (Tg). The glass transition temperature (Tg) of such a resin is preferably 90°C or lower, more preferably 80°C or lower, and still more preferably 70°C or lower. Thermoplastic elastomers include urethane-based elastomers, olefin-based elastomers, vinyl chloride-based elastomers, polyester-based elastomers, styrene-based elastomers, acrylic-based elastomers, and amide-based elastomers Wait. Thermoplastic elastomers can be used singly or in combination of two or more. Thermoplastic elastomers are preferably urethane-based elastomers from the viewpoint that they are easily extended to a large extent. Urethane-based elastomers are generally obtained by reacting long-chain polyols, chain extenders, and diisocyanates. The urethane-based elastomer includes a soft segment having a structural unit derived from a long-chain polyol, and a hard segment having a polyurethane structure obtained by the reaction of a chain extender and a diisocyanate. When urethane-based elastomers are classified according to the types of long-chain polyols, they are classified into polyester-based polyurethane elastomers, polyether-based polyurethane elastomers, and polycarbonates. Ester-based polyurethane elastomers, etc. The urethane-based elastomer can be used singly or in combination of two or more kinds. In this embodiment, the urethane-based elastomer is easily extended to a large extent, and a polyester-based polyurethane elastomer or a polyether-based polyurethane elastomer is preferable. Examples of long-chain polyols include polyester polyols such as lactone-based polyester polyols, and adipate-based polyester polyols; polypropylene (ethylene) polyols, and polytetramethylene ether two Polyether polyols such as alcohols; polycarbonate polyols, etc. In this embodiment, the long-chain polyol is easy to extend to a large extent, and the adipate-based polyester polyol is preferred. Examples of diisocyanates include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, and hexamethylene diisocyanate. In this embodiment, the diisocyanate is preferably hexamethylene diisocyanate from the viewpoint of ease of large extension. Examples of chain extenders include low-molecular-weight polyols (for example, 1,4-butanediol, 1,6-hexanediol, etc.), aromatic diamines, and the like. Among these, from the viewpoint that it is easy to extend to a large extent, 1,6-hexanediol is preferably used. Olefin-based elastomers include those selected from ethylene·α-olefin copolymers, propylene·α-olefin copolymers, butene·α-olefin copolymers, ethylene·propylene·α-olefin copolymers, ethylene·butene· α-olefin copolymer, propylene•butene-α olefin copolymer, ethylene•propylene•butene-α•olefin copolymer, styrene•isoprene copolymer, and styrene•ethylene•butene copolymer A group of at least one type of resin elastomer. The olefin-based elastomer can be used singly or in combination of two or more kinds. The density of the olefin-based elastomer is not particularly limited. For example, the density of the olefin elastomer is preferably 0.860 g/cm 3 or more and less than 0.905 g/cm 3 ; more preferably 0.862 g/cm 3 or more and less than 0.900 g/cm 3 ; particularly preferably 0.864 g /cm 3 or more but less than 0.895g/cm 3 . When the density of the olefin-based elastomer satisfies the above-mentioned range, the substrate has excellent concavity and convexity followability when attaching a semiconductor wafer as an adherend to an adhesive sheet. For the olefin-based elastomer, among all the monomers used to form the elastomer, the mass ratio of monomers containing olefin-based compounds (also referred to as "olefin content" in this specification) is preferably 50% by mass or more, 100% by mass. Less than mass%. When the olefin content is too low, the properties of an elastomer containing structural units derived from olefins will not easily appear, and the substrate will not easily exhibit flexibility and rubber elasticity. From the viewpoint of stably obtaining flexibility and rubber elasticity, the olefin content is preferably 50% by mass or more, and more preferably 60% by mass or more. Examples of the styrene-based elastomer include styrene-conjugated diene copolymers, styrene-olefin copolymers, and the like. Specific examples of styrene-conjugated diene copolymers include styrene-butadiene copolymer, styrene-butadiene-styrene copolymer (SBS), styrene-butadiene-butene-benzene Unhydrogenated styrene such as ethylene copolymer, styrene-isoprene copolymer, styrene-isoprene-styrene copolymer (SIS), styrene-ethylene-isoprene-styrene copolymer, etc. -Conjugated diene copolymer, styrene-ethylene/propylene-styrene copolymer (SEPS, hydrogenated product of styrene-isoprene-styrene copolymer), and styrene-ethylene-butene-styrene Hydrogenated styrene-conjugated diene copolymers such as hydrogenated copolymers (SEBS, hydrogenated styrene-butadiene copolymers), etc. In addition, industrially, styrene elastomers include Tufprene (manufactured by Asahi Kasei Co., Ltd.), Kraton (manufactured by Kraton Polymer Japan Co., Ltd.), Sumitomo TPE-SB (manufactured by Sumitomo Chemical Co., Ltd.), and Epofriend (manufactured by Sumitomo Chemical Co., Ltd.). Trade names such as Daicel Co., Ltd.), Rabalon (Mitsubishi Chemical Co., Ltd.), Septon (Kuraray Co., Ltd.), and Tuftec (Asahi Kasei Co., Ltd.). The styrene elastomer may be a hydrogenated product or an unhydrogenated product. The styrene elastomer can be used singly or in combination of two or more. Rubber-based materials, such as natural rubber, synthetic isoprene rubber (IR), butadiene rubber (BR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), acrylonitrile -Butadiene copolymer rubber (NBR), butyl rubber (IIR), halogenated butyl rubber, acrylic rubber, urethane rubber, and polyvulcanized rubber, etc. Rubber-based materials can be used alone or in combination of two or more of these. The substrate may also be a laminated film obtained by laminating a plurality of layers of films containing the above-mentioned materials (for example, thermoplastic elastomers or rubber-based materials). In addition, the substrate may also be a laminated film obtained by laminating a film containing the above-mentioned material (for example, a thermoplastic elastomer or a rubber-based material) and another film. The base material may contain additives in a film mainly composed of the above-mentioned resin-based materials. Examples of additives include pigments, dyes, flame retardants, plasticizers, antistatic agents, lubricants, and fillers. Examples of the pigment include titanium dioxide, carbon black, and the like. In addition, examples of the filler include organic materials such as melamine resin, inorganic materials such as fumed silica, and metal materials such as nickel particles. The content of such additives is not particularly limited, but is preferably within a range in which the substrate can exhibit the desired function. For the purpose of improving the adhesion with the adhesive layer laminated on at least any one of the first substrate surface and the second substrate surface, the substrate can also be surface-treated on one or both sides as desired, or the bottom Paint treatment. The surface treatment can be exemplified by the oxidation method and the uneven method. The primer treatment can be exemplified by a method of forming a primer layer on the surface of the substrate. Examples of the oxidation method include corona discharge treatment, plasma discharge treatment, chromium oxidation treatment (wet), flame treatment, hot air treatment, ozone treatment, and ultraviolet irradiation treatment. Examples of the concave-convex method include sandblasting and spraying. When the adhesive layer contains an energy ray-curable adhesive, the substrate preferably has energy ray permeability. When ultraviolet rays are used as energy rays, the base material is preferably transparent to ultraviolet rays. When an electron beam is used as the energy beam, the substrate preferably has electron beam permeability. The thickness of the substrate is not limited as long as the adhesive sheet can appropriately perform its function in the desired step. The thickness of the substrate is preferably 20 μm or more, more preferably 40 μm or more. In addition, the thickness of the substrate is preferably 250 μm or less, more preferably 200 μm or less. Moreover, when measuring the thickness of a plurality of parts at 2 cm intervals in the in-plane direction of the first substrate surface or the second substrate surface of the substrate, the standard deviation of the substrate thickness is preferably 2 μm or less, more preferably 1.5 μm or less , And more preferably 1μm or less. By making the standard deviation less than 2μm, the adhesive sheet has a highly accurate thickness, and the adhesive sheet can be stretched uniformly. At 23°C, the tensile modulus of the substrate in the MD and CD directions is 10MPa or more and 350MPa or less, and at 23°C, the 100% stress in the MD and CD directions of the substrate is 3MPa or more and 20MPa, respectively The following is better. By making the tensile elastic modulus and 100% stress within the above range, the adhesive sheet can be greatly extended. The 100% stress of the substrate is the value obtained as follows. A test piece with a size of 100 mm (length direction) × 15 mm (width direction) was cut out from the base material. Clamp the two ends of the cut test piece in the length direction with clamps so that the length between the clamps becomes 50mm. After the test piece is clamped by the clamp, it is stretched in the longitudinal direction at a speed of 200 mm/min, and the measured value of the tensile force when the length between the clamps reaches 100 mm is read. The 100% stress of the substrate is the value obtained by dividing the measured value of the read tensile force by the cross-sectional area of the substrate. The cross-sectional area of the base material is calculated by the width direction length of 15 mm×the thickness of the base material (test piece). This cutting is performed in such a way that the flow direction (MD direction) or the direction orthogonal to the MD direction (CD direction) of the substrate during the manufacture of the substrate coincides with the length direction of the test piece. Furthermore, in this tensile test, the thickness of the test piece is not particularly limited, and may be the same as the thickness of the substrate as the test object. At 23° C., the elongation at break in the MD direction and the CD direction of the substrate are preferably 100% or more, respectively. The elongation at break in the MD direction and CD direction of the substrate is over 100% respectively, so that the adhesive sheet can be greatly extended without breaking. The tensile elastic modulus (MPa) of the substrate and the breaking elongation (%) of the substrate can be measured as follows. The base material was cut into 15 mm×140 mm to obtain a test piece. For this test piece, the elongation at break and the tensile modulus of elasticity at 23°C were measured in accordance with JIS K7161:2014 and JIS K7127:1999. Specifically, the above-mentioned test piece was pulled with a tensile tester (manufactured by Shimadzu Corporation, product name "Autograph AG-IS 500N") at a distance of 100 mm between the chucks, and then pulled at a speed of 200 mm/min. Tensile test to determine the elongation at break (%) and the modulus of tensile elasticity (MPa). In addition, the measurement was performed in both the flow direction (MD) and the direction orthogonal to it (CD) at the time of substrate manufacturing. (Physical properties of the adhesive sheet) Make the adhesive sheet of this embodiment in the first direction, the second direction opposite to the first direction, the third direction perpendicular to the first direction, and the direction opposite to the third direction When the area ratio (S2/S1)×100 of the area S1 of the adhesive sheet before extension to the area S2 of the adhesive sheet after extension is 300%, the substrate and the adhesive layer are preferably not Will break. The first direction, the second direction, the third direction, and the fourth direction are preferably each, for example, the four directions of the +X axis direction, the -X axis direction, the +Y axis direction, and the -Y axis direction extending in two axes described later correspond. The device used to extend in 4 directions, for example, includes the expansion device described later. (Peeling sheet) The adhesive sheet of this embodiment can also be laminated on the adhesive surface for the purpose of protecting the adhesive surface until the adhesive surface of the adhesive layer is attached to the adherend (such as a semiconductor chip, etc.) Peel off the sheet. The configuration of the release sheet is arbitrary. Examples of the peeling sheet include a plastic film that has been peeled off by a peeling agent or the like. Specific examples of the plastic film include polyester film and polyolefin film. Examples of the polyester film include films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate. Examples of the polyolefin film include polypropylene, polyethylene and other films. As the release agent, silicone-based, fluorine-based, and long-chain alkyl-based, etc. can be used. Among these release agents, a polysiloxane system that is inexpensive and can obtain stable performance is preferred. The thickness of the release sheet is not particularly limited. The thickness of the release sheet is usually 20 μm or more and 250 μm or less. (Method for manufacturing adhesive sheet) The adhesive sheet of this embodiment can be manufactured in the same manner as the conventional adhesive sheet. The manufacturing method of the adhesive sheet is not particularly limited if the aforementioned adhesive layer can be laminated on one surface of the substrate. As an example of the manufacturing method of the adhesive sheet, the following methods can be cited. First, a coating liquid containing the adhesive composition constituting the adhesive layer and further containing a solvent or a dispersion medium as desired is prepared. Then, the coating liquid is applied to one surface of the substrate by a coating means to form a coating film. Examples of the coating means include die coaters, curtain coaters, spray coaters, slit coaters, and knife coaters. Next, the adhesive layer can be formed by drying the coating film. As long as the coating liquid can be applied, its properties are not particularly limited. The coating liquid may contain components for forming the adhesive layer as a solute, or may contain components for forming the adhesive layer as a dispersant. Moreover, as another example of the manufacturing method of the adhesive sheet, the following method can be mentioned. First, a coating liquid is applied to the release surface of the release sheet to form a coating film. Next, the coating film is dried to form a laminate including the adhesive layer and the release sheet. Then, a substrate can be attached to the surface of the adhesive layer of the laminate on the side opposite to the side of the release sheet to obtain a laminate of the adhesive sheet and the release sheet. The peeling sheet in the laminated body can be peeled off as an engineering material, and can also protect the adhesive layer until the adherend (such as semiconductor wafer and semiconductor wafer, etc.) is attached to the adhesive layer. When the coating liquid contains a crosslinking agent, the (meth)acrylic copolymer (b1) in the coating film can be carried out by changing the drying conditions (such as temperature and time, etc.) of the coating film, or by performing additional heat treatment. The cross-linking reaction with the cross-linking agent forms a cross-linked structure in the adhesive layer at a desired density. In order to fully carry out the cross-linking reaction, after the adhesive layer is laminated on the base material by the above-mentioned method, the resulting adhesive sheet may be allowed to stand for curing for several days under an environment of 23° C. and a relative humidity of 50%, for example. The thickness of the adhesive sheet of this embodiment is preferably 30 μm or more, more preferably 50 μm or more. In addition, the thickness of the adhesive sheet is preferably 400 μm or less, more preferably 300 μm or less. [Using Method of Adhesive Sheet] The adhesive sheet of this embodiment can be attached to various adherends. Therefore, the adherend to which the adhesive sheet of this embodiment can be applied is not particularly limited. For example, the adherend is preferably a semiconductor wafer and a semiconductor wafer. The adhesive sheet of this embodiment can be used, for example, for semiconductor processing. Furthermore, the adhesive sheet of this embodiment can be used to expand the interval between a plurality of semiconductor chips bonded on a single side. The expansion interval of a plurality of semiconductor chips depends on the size of the semiconductor chips, so there is no special restriction. The adhesive sheet of the present embodiment is preferably used for expanding the distance between adjacent semiconductor wafers among a plurality of semiconductor wafers bonded on one side of the adhesive sheet by 200 μm or more. Furthermore, the upper limit of the distance between the semiconductor wafers is not particularly limited. The upper limit of the distance between the semiconductor wafers may be 6000 μm, for example. In addition, the adhesive sheet of the present embodiment can also be used to expand the interval between a plurality of semiconductor chips laminated on one side of the adhesive sheet by at least biaxial extension. At this time, for example, the adhesive sheet is stretched by applying tension in four directions of the X-axis and Y-axis that are orthogonal to each other in the +X-axis direction, -X-axis direction, +Y-axis direction, and -Y-axis direction. More specifically, In other words, the MD direction and the CD direction in the substrate are respectively extended. The biaxial extension as described above can be performed by, for example, a separation device for applying tension in the X-axis direction and the Y-axis direction. Here, the X-axis and Y-axis are orthogonal, one of the directions parallel to the X-axis is set as the +X-axis direction, and the direction opposite to the +X-axis direction is set as the -X-axis direction, which is parallel to the Y-axis. One of the directions is the +Y-axis direction, and the direction opposite to the +Y-axis direction is the -Y-axis direction. The above-mentioned separation device preferably applies tension to the adhesive sheet in 4 directions of +X axis direction, -X axis direction, +Y axis direction, and -Y axis direction, and has a plurality of holding means for each of the 4 directions, and These corresponding plural tensioning means. In each direction, the number of holding means and tension applying means varies depending on the size of the adhesive sheet, but for example, it may be about 3 or more and 10 or less. Here, for example, in a group including a plurality of holding means and a plurality of tension applying means provided for applying tension in the +X axis direction, each holding means is preferably provided with a holding member for holding the adhesive sheet, and the respective tension The applying means moves the holding member corresponding to the tension applying means in the +X axis direction to apply tension to the adhesive sheet. It is preferable that a plurality of tension applying means are separately provided so as to move the holding means in the +X axis direction. In addition, it is also preferable to have the same configuration in the three groups including a plurality of holding means and a plurality of tension applying means provided for applying tension in the -X axis direction, the +Y axis direction, and the -Y axis direction, respectively. Thereby, the above-mentioned separating device can apply different magnitude of tension to the adhesive sheet in each area perpendicular to the direction of each direction. Generally speaking, four holding members are used to hold the adhesive sheet in the four directions of +X axis, -X axis, +Y axis, and -Y axis. Sheets, in addition to these four directions, in these combined directions (for example, the combined direction of the +X-axis direction and the +Y-axis direction, the combined direction of the +Y-axis direction and the -X-axis direction, the -X-axis direction and the- The composite direction of the Y-axis direction and the composite direction of the -Y-axis direction and the +X-axis direction) will also impart tension. As a result, the interval between the semiconductor chips in the inner region of the adhesive sheet and the interval between the semiconductor chips in the outer region may be different. However, in the above-mentioned separation device, in the respective directions of the +X axis direction, the -X axis direction, the +Y axis direction, and the -Y axis direction, a plurality of tension applying means can individually apply tension to the adhesive sheet, so that the adhesive can be adhered. The sheet is extended in such a way as to eliminate the difference between the inner side and the outer side of the adhesive sheet as described above. As a result, the interval between semiconductor wafers can be adjusted accurately. The aforementioned separation device preferably further includes a measuring means for measuring the distance between the semiconductor wafers. Here, the above-mentioned tension applying means is preferably provided so that a plurality of holding members can be moved individually based on the measurement result of the measuring means. By including the measurement means, the separation device can further adjust the spacing based on the measurement result of the spacing between the semiconductor wafers obtained by the measurement means. As a result, the spacing between the semiconductor wafers can be adjusted more accurately. Furthermore, in the above-mentioned separation device, the holding means may include a chuck means and a pressure reducing means. Examples of the chuck means include a mechanical chuck and a chuck cylinder. Examples of the decompression means include a decompression pump and a vacuum evacuator. In addition, in the above-mentioned separation device, the holding means may have a structure in which the adhesive sheet is supported by an adhesive, magnetic force, or the like. In addition, the holding member in the chuck means can use, for example, a holding member having the following structure: a lower support member that supports the adhesive sheet from below, a drive machine supported by the lower support member, and an output shaft support of the driven machine , The structure of the upper support member that can press the adhesive sheet from above by driving the machine. Examples of the driving equipment include electric machines and actuators. Examples of the electric machine include rotary motors, linear motors, linear motors, single-axis robots, and multi-joint robots. Examples of the actuator include air cylinders, hydraulic cylinders, rodless cylinders, and rotary cylinders. In addition, in the aforementioned separating device, the tension applying means may include a driving device, and the holding member may be moved by the driving device. For the drive device provided in the tension applying means, the same drive device as the drive device provided in the above-mentioned holding member can be used. For example, the tension applying means may include a linear motion motor as a driving device and an output shaft between the linear motion motor and the holding member, and the driven linear motion motor can move the holding member through the output shaft. When the adhesive sheet of this embodiment is used to expand the distance between semiconductor chips, the distance between the semiconductor chips can be expanded from the state where the semiconductor wafers are in contact with each other, or the distance between the semiconductor chips is hardly expanded, or the distance between the semiconductor chips can be expanded to In the state of a specific interval, further expand the interval. When the semiconductor wafers are in contact with each other, or the distance between the semiconductor wafers is hardly enlarged, for example, a plurality of semiconductor wafers can be obtained by dividing the semiconductor wafer on a dicing sheet, and the dicing sheet will divide the number of semiconductor wafers. A semiconductor wafer is transferred to the adhesive sheet of this embodiment, and then the interval between the semiconductor wafers is enlarged. Alternatively, after dividing the semiconductor wafer on the adhesive sheet of this embodiment to obtain a plurality of semiconductor chips, the interval between the semiconductor chips can be enlarged. When the distance between the semiconductor wafers has been expanded to a specific distance, if the distance is further expanded, another adhesive sheet, preferably the adhesive sheet of this embodiment (adhesive sheet for the first extension) can be used to connect the semiconductor wafers to each other. After the interval is expanded to a specific interval, the semiconductor wafer is transferred from the sheet (adhesive sheet for the first extension) to the adhesive sheet (adhesive sheet for the second extension) of this embodiment, and then the adhesive sheet of this embodiment is stretched The sheet (adhesive sheet for the second extension) can further expand the gap between the semiconductor chips. Furthermore, the transfer of such a semiconductor wafer and the extension of the adhesive sheet can be repeated several times until the interval between the semiconductor wafers becomes a desired distance. [Method for Manufacturing Semiconductor Wafer Level Package (FO-WLP)] The adhesive sheet of this embodiment is preferably used for applications that require a large separation of semiconductor chips. Examples of such applications are preferably fan-out. -Type semiconductor wafer level packaging (FO-WLP) manufacturing method. Examples of such FO-WLP manufacturing methods include the first aspect described below. (First aspect) The following describes the first aspect of the FO-WLP manufacturing method using the adhesive sheet of this embodiment. Furthermore, in this first aspect, the adhesive sheet of this embodiment is used as the first adhesive sheet 10 described later. In FIG. 1A, the first adhesive sheet 10 and the plurality of semiconductor chips CP attached to the first adhesive sheet 10 are shown. The first adhesive sheet 10 has a first substrate 11 and a first adhesive layer 12. The first substrate 11 corresponds to the substrate of the adhesive sheet of this embodiment. The first adhesive layer 12 corresponds to the adhesive layer of the adhesive sheet of this embodiment. The first substrate 11 has a first substrate surface 11A and a second substrate surface 11B on the opposite side of the first substrate surface 11A. The first adhesive layer 12 is disposed on the first substrate surface 11A. No adhesive layer is provided on the second substrate surface 11B. In this embodiment, the first adhesive sheet 10 is used as an expansion sheet. The semiconductor wafer CP has a circuit surface W1 and a back surface W3 on the opposite side of the circuit surface W1. On the circuit surface W1, a circuit W2 is formed. The plurality of semiconductor wafers CP, for example, is preferably formed by dicing the semiconductor wafer into pieces. The dicing is preferably performed on a semiconductor wafer attached to a dicing sheet or the like. Cutting means such as a dicing saw can be used for cutting. Dicing can also be performed by irradiating the semiconductor wafer with laser light instead of using the above-mentioned cutting means. For example, the semiconductor wafer can be completely divided by laser light irradiation, and singulated into a plurality of semiconductor wafers. Alternatively, after forming the modified layer by irradiating the laser light on the inside of the semiconductor wafer, the adhesive sheet is stretched in the expansion step described later to break the semiconductor wafer at the position of the modified layer, and the semiconductor wafer can be singulated into the semiconductor chip CP . Such a method of singulating into semiconductor wafers is called stealth dicing. In the case of invisible cutting, the laser light is irradiated, for example, the laser light in the infrared region is irradiated to focus on the focal point set inside the semiconductor wafer. In addition, in these methods, the laser light can be irradiated from any side of the semiconductor wafer. After dicing, it is preferable to transfer a plurality of semiconductor wafers CP to the expansion sheet at a time. In this embodiment, the singulated semiconductor chips CP are transferred to the first adhesive sheet 10 by the dicing sheet. The plurality of semiconductor chips CP are bonded with their circuit surfaces W1 facing the first adhesive layer 12. In FIG. 1B, there is shown a diagram illustrating a step of stretching the first adhesive sheet 10 holding a plurality of semiconductor chips CP (hereinafter referred to as "expansion step"). The first adhesive sheet 10 is stretched to expand the interval between the plurality of semiconductor chips CP. In addition, when performing stealth cutting, the first adhesive sheet 10 can be stretched to break the semiconductor wafer at the position of the modified layer, singulate it into a plurality of semiconductor chips CP, and expand the interval between the plurality of semiconductor chips CP. . The method of stretching the first adhesive sheet 10 in the expansion step is not particularly limited. The method of stretching the first adhesive sheet 10 includes, for example, a method of pressing against a ring-shaped or circular expander to stretch the first adhesive sheet 10, and using a holding member to clamp the first adhesive sheet 10 The method of stretching the outer periphery, etc. The latter method includes, for example, a method of performing biaxial stretching using the aforementioned separating device or the like. Among these methods, the space between the semiconductor chips CP can be enlarged more significantly, and the two-axis extension method is particularly preferable. As shown in FIG. 1B, the distance between the expanded semiconductor chips CP is D1. The distance D1 depends on the size of the semiconductor chip CP, so there is no special restriction. The distance D1 is preferably 200 μm or more and 6000 μm or less independently, for example. After the expansion step, a step of irradiating the first adhesive sheet 10 with energy rays to harden the first adhesive layer 12 (hereinafter referred to as the "energy ray irradiation step") is implemented. When the first adhesive layer 12 is UV curable, in the energy ray irradiation step, the first adhesive sheet 10 is irradiated with ultraviolet rays. By hardening the first adhesive layer 12 after the expansion step, the shape retention of the first adhesive sheet 10 after the expansion is improved. As a result, it is easy to maintain the alignment of the plurality of semiconductor chips CP bonded to the first adhesive layer 12. In FIG. 2A, a diagram illustrating the step of transferring a plurality of semiconductor wafers CP to the second adhesive sheet 20 (hereinafter referred to as a "transfer step") after the expansion step is shown. After the first expansion step, the first adhesive layer 12 is hardened, so the adhesive force of the first adhesive layer 12 is reduced, and the first adhesive sheet 10 is easily peeled off from the semiconductor chip CP. Furthermore, since the first adhesive sheet 10 is the adhesive sheet of this embodiment, the adhesive residue of the semiconductor chip CP can be suppressed. After the first adhesive sheet 10 is stretched to expand the interval between the plurality of semiconductor chips CP to reach the distance D1, the second adhesive sheet 20 is bonded to the back surface W3 of the semiconductor chip CP. Here, the second adhesive sheet 20 is not particularly limited as long as it can hold a plurality of semiconductor chips CP. When it is desired to further expand the distance D1 between the plurality of semiconductor chips CP, the second adhesive sheet 20 preferably uses an expanded sheet, and more preferably uses the adhesive sheet of this embodiment. The second adhesive sheet 20 has a second substrate 21 and a third adhesive layer 22. When the adhesive sheet of this embodiment is used as the second adhesive sheet 20, the second base material 21 corresponds to the base material of the adhesive sheet of this embodiment, and the third adhesive layer 22 corresponds to the adhesive sheet of this embodiment. The adhesive layer. The second adhesive sheet 20 can also be attached to the second ring frame together with a plurality of semiconductor chips CP. At this time, on the third adhesive layer 22 of the second adhesive sheet 20, a second ring-shaped frame is placed and lightly pressed to fix it. After that, the third adhesive layer 22 exposed inside the ring shape of the second ring frame is pressed against the back surface W3 of the semiconductor chip CP, and a plurality of semiconductor chips CP are fixed on the second adhesive sheet 20. 2B shows a diagram illustrating the step of peeling off the first adhesive sheet 10 after the second adhesive sheet 20 is attached. After the second adhesive sheet 20 is attached, when the first adhesive sheet 10 is peeled off, the circuit surfaces W1 of the plurality of semiconductor chips CP will be exposed. After peeling off the first adhesive sheet 10, it is better to maintain the distance D1 between the plurality of semiconductor chips CP expanded in the expanding step. When the second adhesive sheet 20 is an expanded sheet, the step of stretching the second adhesive sheet 20 after peeling off the first adhesive sheet 10 (hereinafter referred to as the "second expansion step") may also be implemented. At this time, the expansion step of stretching the first adhesive sheet 10 is also referred to as the first expansion step. In the second expansion step, the interval between the plurality of semiconductor chips CP is further expanded. When the second adhesive sheet 20 is the adhesive sheet of this embodiment, the alignment of the plurality of semiconductor chips CP after expansion will be improved. The method of stretching the second adhesive sheet 20 in the second expansion step is not particularly limited. For example, the second expansion step may be implemented in the same manner as the first expansion step. Furthermore, the interval between the semiconductor chips CP after the second expansion step is referred to as D2. The distance D2 depends on the size of the semiconductor chip CP, so there is no special limitation, but the distance D2 is greater than the distance D1. The distance D2 is preferably 200 μm or more and 6000 μm or less independently, for example. In FIG. 2C, there is shown a diagram illustrating the step of transferring the plurality of semiconductor chips CP bonded to the second adhesive sheet 20 to the third adhesive sheet 30 (hereinafter referred to as the "transfer step"). When the second adhesive sheet 20 is the adhesive sheet of this embodiment, the adhesive residue of the semiconductor chip CP can be suppressed. In FIG. 2C, the second expansion step is not performed, that is, the state where the second adhesive sheet 20 is transferred to the third adhesive sheet 30 is shown. The third adhesive sheet 30 is not particularly limited as long as it can hold a plurality of semiconductor chips CP. The plurality of semiconductor chips CP transferred from the second adhesive sheet 20 to the third adhesive sheet 30 preferably maintain the distance D1 between the semiconductor chips CP. After performing the second expansion step, it is preferable to maintain the distance D2 between the semiconductor chips CP. After the first expansion step, by repeating the transfer step and the expansion step any number of times, the distance between the semiconductor chips CP can be the desired distance, and the direction of the circuit surface when the semiconductor chip CP is sealed can be the desired direction. When a plurality of semiconductor chips CP on the third adhesive sheet 30 are to be sealed, the third adhesive sheet 30 is preferably an adhesive sheet for the sealing step, and more preferably an adhesive sheet with heat resistance. The third adhesive sheet 30 has a third substrate 31 and a fourth adhesive layer 32. In addition, when a heat-resistant adhesive sheet is used as the third adhesive sheet 30, the third base material 31 and the fourth adhesive layer 32 are preferably made of heat-resistant materials that can withstand the temperature applied in the sealing step. form. Another aspect of the third adhesive sheet 30 includes an adhesive sheet provided with a third substrate, a third adhesive layer, and a fourth adhesive layer. The adhesive sheet includes a third substrate between the third adhesive layer and the fourth adhesive layer, and has adhesive layers on both sides of the third substrate. The plurality of semiconductor chips CP transferred from the second adhesive sheet 20 to the third adhesive sheet 30 are bonded with the circuit surface W1 facing the fourth adhesive layer 32. In FIG. 2D, there is shown a diagram explaining a step of sealing a plurality of semiconductor wafers CP using the sealing member 60 (hereinafter referred to as a "sealing step"). In this embodiment, the sealing step is performed after the plurality of semiconductor wafers CP are transferred to the third adhesive sheet 30. In the sealing step, in a state where the circuit surface W1 is protected by the third adhesive sheet 30, the sealing body 3 is formed by covering a plurality of semiconductor chips CP with the sealing member 60. The sealing member 60 is also filled between the plurality of semiconductor chips CP. Since the circuit surface W1 and the circuit W2 are covered by the third adhesive sheet 30, the circuit surface W1 can be prevented from being covered by the sealing member 60. Through the sealing step, a sealing body 3 in which a plurality of semiconductor chips CP separated by a specific distance are embedded in the sealing member 60 is obtained. In the sealing step, the plurality of semiconductor chips CP are preferably covered by the sealing member 60 while maintaining the distance after the expanding step. After the sealing step, the third adhesive sheet 30 is peeled off. The circuit surface W1 of the semiconductor chip CP and the surface 3A of the sealing body 3 contacting the third adhesive sheet 30 are exposed. After the adhesive sheet is peeled off from the sealing body 3, the sealing body 3 is sequentially subjected to a rewiring layer forming step of forming a rewiring layer electrically connected to the semiconductor chip CP, and electrically connecting the rewiring layer and the external terminal electrode The connection steps. Through the rewiring layer forming step and the connection step with the external terminal electrode, the circuit of the semiconductor chip CP and the external terminal electrode are electrically connected. The sealing body 3 to which the external terminal electrode is connected is singulated by semiconductor wafer CP units. The method of singulating the sealing body 3 into pieces is not particularly limited. By singulating the sealing body 3 into pieces, a semiconductor package of the semiconductor chip CP unit is manufactured. The semiconductor package connecting the external electrodes outside the area of the semiconductor chip CP is manufactured as a fan-out wafer level package (FO-WLP). According to the adhesive sheet of this embodiment, the adhesive residue can be suppressed. Therefore, it can be suitably used for the purpose of greatly expanding the interval between a plurality of semiconductor wafers as described above, and it is necessary to transfer the expanded plurality of semiconductor wafers to another member. [Variations of Embodiments] The present invention is not limited to the above-mentioned embodiments at all. The present invention includes the modified aspects of the above-mentioned embodiments and the like within the scope that can achieve the purpose of the invention. For example, the semiconductor wafer or the circuits in the semiconductor wafer are not limited to the arrangement or shape shown in the figure. The connection structure with the external terminal electrode in the semiconductor package is not limited to the aspect described in the foregoing embodiment. In the foregoing embodiment, the FO-WLP type semiconductor package is manufactured as an example, but the present invention can also be applied to the manufacture of fan-in type WLP and other semiconductor packages. In the method of manufacturing the FO-WLP of the first aspect described above, part of the steps may be changed or part of the steps may be omitted. In the foregoing embodiment, the adhesive layer of the foregoing embodiment is provided on one of the first substrate surface and the second substrate surface, and the adhesive layer is not provided on the other surface as an example. Note, but the present invention is not limited to such an aspect. For example, an adhesive sheet in which adhesive layers are provided on both surfaces of a substrate can be cited, and at least one of the adhesive layers is the adhesive layer of the aforementioned embodiment. For example, Fig. 4 shows an adhesive sheet 10A. The adhesive sheet 10A has a substrate 110, a first adhesive layer 12 and a second adhesive layer 13. The adhesive sheet 10A includes a substrate 110 between the first adhesive layer 12 and the second adhesive layer 13. A first adhesive layer 12 is provided on the first substrate surface 11A of the substrate 110, and a second adhesive layer 13 is provided on the second substrate surface 11B. The substrate 110 is the same as the first substrate 11 in the foregoing embodiment. The first adhesive layer 12 corresponds to the adhesive layer of the adhesive sheet of the foregoing embodiment. The second adhesive layer 13 is not particularly limited. The composition of the first adhesive layer 12 and the second adhesive layer 13 may be the same or different. The thickness of the first adhesive layer 12 and the second adhesive layer 13 may be the same or different. [Examples] Examples are listed below to illustrate the present invention in more detail. The present invention is not limited in any way by these embodiments. [Production of Adhesive Sheet] (Example 1) 52 parts by mass of butyl acrylate (BA), 20 parts by mass of methyl methacrylate (MMA), and 28 parts by mass of 2-hydroxyethyl acrylate (2HEA) were copolymerized. An acrylic copolymer is obtained. The acrylic copolymer was prepared and a solution of resin (acrylic A) added with 2-isocyanatoethyl methacrylate (manufactured by Showa Denko Co., Ltd., product name "Karenz MOI" (registered trademark)) (Main agent of adhesive). In terms of the addition rate, the 2-isocyanatoethyl methacrylate is 90 mol% relative to 100 mol% of 2HEA of the acrylic copolymer. The weight average molecular weight (Mw) of the obtained resin (acrylic A) was 600,000, and the Mw/Mn was 4.5. The weight average molecular weight Mw and the number average molecular weight Mn in terms of standard polystyrene were measured by gel permeation chromatography (GPC), and the molecular weight distribution (Mw/Mn) was obtained from the respective measured values. To this adhesive main agent, energy ray curable resin A (manufactured by Sakamoto Pharmaceutical Co., Ltd., product name "SA-TE60") and photopolymerization initiator (manufactured by IGM Resins BV, product name) are added at the following ratios "Omnirad 127D") and crosslinking agent (manufactured by TOYOCHEM Co., Ltd., TMP-TDI (trimethylolpropane adduct of toluene diisocyanate), and after adding ethyl acetate, stirring for 30 minutes to prepare a solid content of 35.0 mass % Of adhesive composition A1. Adhesive main agent: 100 parts by mass of solid content Energy ray curable resin A: 51.4 parts by mass of solid content Photopolymerization initiator: 3.7 parts by mass of solid content Crosslinking agent: 0.2 parts by mass of solid content Next, the prepared adhesive composition A1 solution was applied to a polyethylene terephthalate (PET)-based release film (manufactured by Lintec Co., Ltd., product name "PET752150"), and the film was applied to Drying at 90°C for 90 seconds and further drying at 100°C for 90 seconds to form an adhesive layer with a thickness of 30 μm on the release film. A urethane base material (manufactured by Kurabo Industries Co., Ltd., product name) is attached to the adhesive layer "U-1490", thickness 100μm, hardness 90 degrees (Type A), cut and remove unnecessary parts at the end in the width direction to make adhesive sheet SA1. The properties of the energy ray curable resin are shown in the table. 1. (Example 2) In the production of the adhesive sheet SA1 of Example 1, energy ray curable resin B (manufactured by Sakamoto Pharmaceutical Co., Ltd., product name "SA-TE6") was used instead of energy ray curability Resin A ("SA-TE60"), except that the adhesive sheet SA2 of Example 2 was produced in the same manner as in Example 1. (Example 3) In the production of the adhesive sheet SA1 of Example 1, energy rays were used Curable resin C (manufactured by Shinnakamura Chemical Industry Co., Ltd., product name "ATM-35E") instead of energy ray curable resin A ("SA-TE60"), except that it is the same as in Example 1 The adhesive sheet SA3 of Example 3 was produced. (Example 4) In the production of the adhesive sheet SA1 of Example 1, energy ray curable resin D (manufactured by Shinnakamura Chemical Industry Co., Ltd., product name "A-GLY- 9E"), replacing the energy ray curable resin A ("SA-TE60"), except that the adhesive sheet SA4 of Example 4 was produced in the same manner as Example 1. (Comparative Example 1) In Example 1 In the production of the adhesive sheet SA1, energy ray curable resin E (manufactured by Shinnakamura Chemical Industry Co., Ltd., product name "A-DOD-N") is used instead of energy ray curable resin A ("SA-TE60") Except for this, the adhesive sheet R-SA1 of Comparative Example 1 was produced in the same manner as in Example 1. (Comparative Example 2) In the production of the adhesive sheet SA1 of Example 1, Energy ray curable resin F (manufactured by Mitsubishi Chemical Corporation, product name "UV-5806") is used instead of energy ray curable resin A ("SA-TE60"), except that it is the same as Example 1 The adhesive sheet R-SA2 of Comparative Example 2 was produced. [Evaluation of Adhesive Sheet] The following evaluations were performed for the produced adhesive sheet. The evaluation results are shown in Table 1. (Evaluation method of alignment) The adhesive sheets produced in Examples 1 to 4 and Comparative Examples 1 to 2 were cut into 210 mm×210 mm to obtain test adhesive sheets. At this time, it is cut so that each side of the cut sheet becomes parallel or perpendicular to the MD direction of the substrate in the adhesive sheet. The silicon wafer is cut, and a total of 49 wafers are cut in a way that the size of 3mm×3mm wafers becomes 7 rows in the X-axis direction and 7 rows in the Y-axis direction. The peeling film of the adhesive sheet for the peeling test was attached to the center of the exposed adhesive layer with 49 chips cut out as described above. At this time, the wafers are arranged in 7 rows in the X-axis direction and 7 rows in the Y-axis direction. The distance between the wafers, the X-axis direction and the Y-axis direction are both 35 μm. Next, the test adhesive sheet with the chip attached is set in the expansion device (separation device) that can be extended in two axes. In FIG. 3, a plan view illustrating the expansion device 100 is shown. In Figure 3, the X-axis and Y-axis are orthogonal to each other. The positive direction of the X-axis is called the +X-axis direction, the negative direction of the X-axis is called the -X-axis direction, and the positive direction of the Y-axis is called the +Y-axis direction. , The negative direction of the Y-axis is called -Y-axis direction. The test adhesive sheet 200 is installed in the expansion device 100 such that each side becomes parallel to the X-axis or the Y-axis. As a result, the MD direction of the substrate in the test adhesive sheet 200 is parallel to the X axis or the Y axis. Furthermore, in FIG. 3, the wafer is omitted. As shown in FIG. 3, the expansion device 100 is provided with 5 holding means 101 (total 20 holding means 101) in each of the +X axis direction, the -X axis direction, the +Y axis direction, and the -Y axis direction. Among the five holding means 101 in each direction, holding means 101A is located at both ends, holding means 101C is located at the center, and holding means 101B is located between holding means 101A and holding means 101C. Each side of the test adhesive sheet 200 is held by the holding means 101 such as this. Here, as shown in FIG. 3, one side of the test adhesive sheet 200 is 210 mm. In addition, the distance between the holding means 101 on each side is 40 mm. In addition, the distance between the end of one side of the test adhesive sheet 200 (the apex of the sheet) and the holding means 101A located on the side and closest to the end was 25 mm. • The first expansion test Next, a plurality of tension applying means (not shown) corresponding to each of the holding means 101 are driven to move the holding means 101 independently. Fix the four sides of the test adhesive sheet with clamps, and expand the test adhesive sheet at a speed of 5mm/s in the X-axis direction and the Y-axis direction with an expansion amount of 200mm. As a result of the first expansion test, the area of the test adhesive sheet was expanded by 381% compared to the area before expansion. In this embodiment, the expansion test with the expansion amount of 200 mm may be referred to as the first expansion test. After the first expansion test, the substrate and the adhesive layer of the adhesive sheets of Examples 1 to 4 did not break. • The second expansion test is the same as the first expansion test except that the expansion amount in the X-axis direction and the Y-axis direction in the first expansion test is changed to 350mm. As a result of the second expansion test, the area of the test adhesive sheet was 711% relative to the expansion before expansion. In this embodiment, the expansion test with the expansion amount of 350 mm is referred to as the second expansion test. In addition, the second expansion test was performed based on the results of the first expansion test, and the alignment evaluation was performed as the adhesive sheet of evaluation A described later. After the second expansion test, the substrate and the adhesive layer of the adhesive sheets of Examples 1 to 3 did not break. After the adhesive sheet for the test is expanded by the first expansion test or the second expansion test, the expansion state of the test adhesive sheet 200 is maintained by the ring frame. While maintaining the expanded state, based on the positional relationship between the wafers, the standard deviation of the distance between the wafers is calculated to evaluate the alignment. Specifically, the center of the wafer is obtained from the corner of each wafer, and the distance between the centers of adjacent wafers is measured. From the distance between the centers, subtract the length of the side of the wafer by 3 mm, and use it as the distance between the wafers. The position of the chip on the test adhesive sheet was measured using a CNC video measuring machine (manufactured by Mitutoyo Co., Ltd., product name "Vision ACCEL"). The standard deviation is calculated using the data analysis software JMP13 manufactured by JMP. The evaluation criteria for alignment are set as follows. In this example, evaluation A or evaluation B was judged to be a pass. • Evaluation Criteria for Alignment Evaluation A: Standard deviation of 100μm or less Evaluation B: Standard deviation of 200μm or less Evaluation C: Standard deviation of 201μm or more (evaluation method of wafer floating) The first extension of the description of the above evaluation method of alignment After the test adhesive sheet is expanded, the test adhesive sheet 200 is maintained in an expanded state by the ring frame. While maintaining the expanded state, go over the test adhesive sheet 200 and use a digital microscope (manufactured by KEYENCE Co., Ltd., product name "VHX-1000") to observe the bonding state of the adhesive layer side surface of the chip and the adhesive layer . The evaluation criteria for wafer floating are set as follows. In this example, evaluation A was judged to be a pass. • Evaluation Criteria for Wafer Raising: Evaluation A: All the wafers are not raised by the adhesive sheet (the end of the wafer is not separated by the adhesive layer). Evaluation B: At least one wafer floated by the adhesive sheet (the end of the wafer was separated by the adhesive layer). (Evaluation Method of Adhesive Bleeding) Using the adhesive composition, the strip-shaped release film and the urethane base material produced in the foregoing examples or comparative examples, a strip-shaped roller sample of the adhesive sheet was produced. Next, the adhesive sheet rolled out of the roller sample was cut into a width of 35 mm, and the cut adhesive sheet was wound with a weight of 25 m on a 3-inch ABS core to obtain a test roller sample. The test roller sample was allowed to stand in a constant temperature bath at 40°C for 48 hours, and the state of the cut surface was subjected to a palpation test. The evaluation criteria for the bleeding of the adhesive are set as follows. In this example, evaluation A was judged to be a pass. • Bleeding evaluation criteria Evaluation A: The cut surface has no stickiness evaluation B: The cut surface has stickiness (SS characteristics: breaking elongation and stress before UV curing) Only examples 1 to 4 and comparative examples 1 to are laminated 2 The adhesive layer of the adhesive sheet is used to make a sample for evaluation of SS characteristics with a thickness of 200 µm, a width of 15 mm, and a length of 50 mm. After that, the sample for SS characteristic evaluation was fixed with a chuck to a tensile testing machine whose distance between the chucks was adjusted to 30 mm. The sample for SS characteristic evaluation fixed by the chuck was stretched at a speed of 50 mm/min, and the displacement and stress at this time were recorded. Based on the recorded displacement and stress, a displacement-stress curve is made. The tensile testing machine uses the product name "Autograph AG-IS 500N" manufactured by Shimadzu Corporation. The displacement when the sample for evaluation of SS characteristics breaks is taken as the breaking elongation (unit: %). In Table 1, those described as ">2000" indicate that the sample for SS characteristic evaluation did not break even if the displacement was 2000%. In the displacement-stress curve, the stress at 1500% displacement (unit: MPa) is shown in Table 1. The evaluation criteria of SS characteristics are set as follows. In this example, evaluation A was judged to be a pass. • Evaluation Criteria for SS Characteristics Evaluation A: The elongation at break is 1500% or more, and the stress at 1500% displacement is 0.22MPa or less. Evaluation B: It corresponds to at least one of the case where the elongation at break is less than 1500% and the case where the stress at 1500% displacement exceeds 0.22 MPa. (SS characteristics: breaking energy after UV curing) The breaking energy E (unit: J) after UV curing is obtained by a tensile test at 23°C based on JIS K7161: 1994 and JIS K 7127: 1999. First, only the adhesive layers of the adhesive sheets of Examples 1 to 4 and Comparative Examples 1 to 2 were laminated to produce a sheet-like adhesive layer before UV curing with a thickness of 40 μm, a width of 15 mm, and a length of 150 mm. The sheet-like adhesive layer before UV curing was irradiated with ultraviolet (UV) to prepare a sample for evaluating SS characteristics after UV curing. •Ultraviolet radiation conditions: After 220mW/cm 2 , 160mJ/cm 2 , the sample for evaluating the SS characteristics after UV curing is fixed with a chuck to a tensile testing machine whose distance between the chuck is adjusted to 100mm. The sample for evaluating the SS characteristics after UV hardening fixed by the chuck was stretched at a speed of 50 mm/min, and the displacement and stress at this time were recorded. Based on the recorded displacement and stress, a displacement-stress curve is made. The tensile testing machine uses the product name "Autograph AG-IS 500N" manufactured by Shimadzu Corporation. The fracture elongation (unit: %) of the sample for evaluation of the SS characteristics after UV curing was taken as the displacement when it broke. The fracture energy E (unit: J) after UV curing is calculated by the following formula (A) using a table calculation software.
Figure 02_image019
In the aforementioned formula (A), the constant a is the displacement of the breaking point (unit: mm), and f(x) is the stress (unit: N) at the displacement x (unit: mm). The sampling rate when measuring the fracture energy E is once/0.05sec (20Hz). (Evaluation method of adhesive residue) In the first expansion test in the evaluation of the aforementioned alignment, the test adhesive sheet was expanded and then irradiated with ultraviolet rays under the following irradiation conditions. •Ultraviolet irradiation conditions: After 220mW/cm 2 , 160mJ/cm 2 UV irradiation, use the UV-curing tape D-218 manufactured by Lindco Co., Ltd. to peel off the wafer from the test adhesive sheet. A digital microscope (manufactured by KEYENCE Co., Ltd., product name "VHX-1000") was used to confirm the surface of the wafer adjacent to the adhesive layer at an optical 100 times. As a criterion for determining the presence or absence of adhesive, if there is more than one adhesive remaining in one chip, it is counted as an adhesive remaining chip. The evaluation criteria for adhesive residue are set as follows. In this example, evaluation A or evaluation B was judged to be a pass. • Evaluation Criteria for Adhesive Remaining Evaluation A: No adhesive remaining on all chips Evaluation B: The generation rate of adhesive residual chips is less than 40% Evaluation C: The generation rate of adhesive residual chips is more than 41%
Figure 02_image021
The description of the symbols in Table 1 is as follows. EG: the number of ethylene glycol EG units M EG : the total number of ethylene glycol units per molecule of the energy ray curable resin The number of UV curable functional groups M UV : the energy per molecule of the energy ray curable resin Line (in this example, ultraviolet light). The total number of curable functional groups M EG /M UV : The number of ethylene glycol (EG) units per energy ray (UV) curable functional group is shown in Table 1. In the adhesive sheets of Examples 1 to 4, the energy The breaking energy of the simple substance of the adhesive layer after radiation is above 0.055J. Therefore, the adhesive sheets of Examples 1 to 4 are adhesive sheets with little adhesive residue.

3:密封體 10:第一黏著薄片 10A:黏著薄片 11:第一基材 11A:第一基材面 11B:第二基材面 12:第一黏著劑層 13:第二黏著劑層 20:第二黏著薄片 21:第二基材 22:第三黏著劑層 30:第三黏著薄片 31:第三基材 32:第四黏著劑層 60:密封構件 100:擴展裝置 101:保持手段 101A:保持手段 101B:保持手段 101C:保持手段 110:基材 200:試驗用黏著薄片 CP:半導體晶片 W1:電路面 W2:電路 W3:背面3: Sealing body 10: The first adhesive sheet 10A: Adhesive sheet 11: The first substrate 11A: The first substrate surface 11B: Second substrate surface 12: The first adhesive layer 13: The second adhesive layer 20: The second adhesive sheet 21: Second substrate 22: The third adhesive layer 30: The third adhesive sheet 31: The third substrate 32: Fourth adhesive layer 60: Sealing member 100: Expansion device 101: keep the means 101A: Keeping the means 101B: Keeping the Means 101C: Keeping the Means 110: Substrate 200: Adhesive sheet for test CP: Semiconductor chip W1: circuit surface W2: Circuit W3: Back

[圖1A]，為說明本發明之一實施形態的黏著薄片之使用方法之第一態樣的截面圖。 [圖1B]，為說明本發明之一實施形態的黏著薄片之使用方法之第一態樣的截面圖。 [圖2A]，為說明本發明之一實施形態的黏著薄片之使用方法之第一態樣的截面圖。 [圖2B]，為說明本發明之一實施形態的黏著薄片之使用方法之第一態樣的截面圖。 [圖2C]，為說明本發明之一實施形態的黏著薄片之使用方法之第一態樣的截面圖。 [圖2D]，為說明本發明之一實施形態的黏著薄片之使用方法之第一態樣的截面圖。 [圖3]為說明實施例所使用的2軸延伸擴展裝置之平面圖。 [圖4]，為本發明之另一實施形態的黏著薄片之截面圖。[Figure 1A] is a cross-sectional view illustrating the first aspect of the method of using the adhesive sheet according to one embodiment of the present invention. [Figure 1B] is a cross-sectional view illustrating the first aspect of the method of using the adhesive sheet according to one embodiment of the present invention. [Fig. 2A] is a cross-sectional view illustrating the first aspect of the method of using the adhesive sheet according to one embodiment of the present invention. [Figure 2B] is a cross-sectional view illustrating the first aspect of the method of using the adhesive sheet according to one embodiment of the present invention. [Figure 2C] is a cross-sectional view illustrating the first aspect of the method of using the adhesive sheet according to one embodiment of the present invention. [Figure 2D] is a cross-sectional view illustrating the first aspect of the method of using the adhesive sheet according to one embodiment of the present invention. [Fig. 3] is a plan view illustrating the 2-axis extension device used in the embodiment. [Figure 4] is a cross-sectional view of an adhesive sheet according to another embodiment of the present invention.

10:第一黏著薄片 10: The first adhesive sheet

11:第一基材 11: The first substrate

11A:第一基材面 11A: The first substrate surface

11B:第二基材面 11B: Second substrate surface

12:第一黏著劑層 12: The first adhesive layer

CP:半導體晶片 CP: Semiconductor chip

W1:電路面 W1: circuit surface

W2:電路 W2: Circuit

W3:背面 W3: Back

Claims (6)

一種黏著薄片，其具有基材與黏著劑層， 前述黏著劑層，含有能量線硬化性樹脂， 能量線照射後之前述黏著劑層單質的斷裂能為0.055J以上。An adhesive sheet, which has a substrate and an adhesive layer, The aforementioned adhesive layer contains an energy ray curable resin, The breaking energy of the aforementioned adhesive layer element after energy ray irradiation is 0.055J or more. 如請求項1之黏著薄片，其中 能量線照射後之前述黏著劑層單質的斷裂能為0.065J以上。Such as the adhesive sheet of claim 1, where The breaking energy of the aforementioned adhesive layer element after energy ray irradiation is 0.065J or more. 如請求項1之黏著薄片，其中 能量線照射後之前述黏著劑層單質的斷裂伸度為6%以上。Such as the adhesive sheet of claim 1, where The breaking elongation of the aforementioned adhesive layer element after energy ray irradiation is 6% or more. 如請求項1之黏著薄片，其中 前述能量線硬化性樹脂，具有1個以上的下述通式(11)表示之乙二醇單位；
Figure 03_image001
(前述通式(11)中，m為1以上)。The adhesive sheet of claim 1, wherein the aforementioned energy ray curable resin has more than one ethylene glycol unit represented by the following general formula (11);
Figure 03_image001
(In the aforementioned general formula (11), m is 1 or more). 如請求項1之黏著薄片，其中 前述能量線硬化性樹脂，進一步具有3個以上的能量線硬化性之官能基。Such as the adhesive sheet of claim 1, where The aforementioned energy ray curable resin further has three or more energy ray curable functional groups. 如請求項1至請求項5中任一項之黏著薄片，其中 前述能量線硬化性樹脂，進一步具有1個以上的甘油骨架。Such as the adhesive sheet of any one of claim 1 to claim 5, where The aforementioned energy ray curable resin further has one or more glycerin skeletons.
TW109119439A 2019-10-04 2020-06-10 Adhesive sheet TWI846884B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019183566 2019-10-04
JP2019-183566 2019-10-04
PCT/JP2020/020331 WO2021065074A1 (en) 2019-10-04 2020-05-22 Adhesive sheet
WOPCT/JP2020/020331 2020-05-22

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TW202122534A true TW202122534A (en) 2021-06-16
TWI846884B TWI846884B (en) 2024-07-01

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