TWI814785B - Expansion method, semiconductor device manufacturing method, and adhesive sheet - Google Patents

Abstract

An expansion method with the following characteristics: The adhesion process involves adhering the first adhesive layer (12) or the second adhesive layer (13) of the adhesive sheet (10) to multiple adherends. The adhesive sheet (10) has: A first adhesive layer (12) of energy ray curable resin, a second adhesive layer (13) containing a second energy ray curable resin, and a base material (11); The expansion process is to expand the adhesive sheet (10) to expand the distance between the plurality of adherent bodies; and The energy ray irradiation process is to irradiate the first adhesive layer (12) and the second adhesive layer (13) with energy rays to harden the first adhesive layer (12) and the second adhesive layer (13).

Description

Expansion method, semiconductor device manufacturing method, and adhesive sheet

The present invention relates to an expansion method, a semiconductor device manufacturing method and an adhesive sheet.

In recent years, electronic equipment has been increasingly miniaturized, lightweight, and highly functional. Semiconductor devices mounted in electronic equipment are also required to be smaller, thinner, and higher in density. Semiconductor wafers are sometimes mounted in packages close to their size. Such packaging is also called Chip Scale Package (CSP). As one of the CSPs, wafer level packaging (Wafer Level Package; WLP) can be cited. In WLP, before individualizing by dicing, external electrodes, etc. are formed on the wafer, and finally the wafer is diced and individualized. As WLP, there are fan-in type and fan-out type. In fan-out type WLP (hereinafter sometimes referred to as "FO-WLP"), a semiconductor wafer is covered with a sealing member so that it becomes an area larger than the size of the wafer, thereby forming a semiconductor wafer sealing body. On the circuit surface, a rewiring layer or an external electrode is also formed in the surface area of the sealing member. For example, Document 1 (International Publication No. 2010/058646) describes that a plurality of semiconductor wafers are individually sliced from a semiconductor wafer, leaving the circuit formation surface, and surrounding the surroundings with a mold member to form an expanded wafer. Circle, a manufacturing method of a semiconductor package formed by extending a rewiring pattern to an area outside the semiconductor wafer. In the manufacturing method described in Document 1, before a plurality of individualized semiconductor wafers are surrounded by a mold member, an expansion sheet (expand sheet) is attached to it, and the expansion sheet is stretched to make the gaps between the plurality of semiconductor wafers Distance expands. In the manufacturing method of FO-WLP as described above, in order to form the above-mentioned rewiring pattern etc. in the area outside the semiconductor wafer, the expansion sheet (adhesive sheet) is expanded to fully separate the semiconductor wafers. It is desired to maintain the expanded The issue of the expansion state of the adhesive sheet. Such a problem is not limited to semiconductor wafers, but also applies to other attached objects.

An object of the present invention is to provide an expansion method that can maintain the shape of an adhesive sheet in an expanded state during an expansion process, and to provide an adhesive sheet used in the expansion method. Another object of the present invention is to provide a method for manufacturing a semiconductor device including the expansion method. According to one aspect of the present invention, an expansion method is provided, which is characterized by: An adhesion process in which the first adhesive layer or the second adhesive layer of an adhesive sheet is attached to a plurality of objects to be adhered, and the adhesive sheet has: a first adhesive containing a first energy ray curable resin layer, a second adhesive layer containing a second energy ray curable resin, and a base material between the aforementioned first adhesive layer and the aforementioned second adhesive layer; Expansion process, which is to expand the aforementioned adhesive sheet to expand the distance between the aforementioned plurality of adherent bodies; and The energy ray irradiation process is to irradiate the first adhesive layer and the second adhesive layer with energy rays to harden the first adhesive layer and the second adhesive layer. In the expansion method according to one aspect of the present invention, it is preferable that the first energy ray curable resin and the second energy ray curable resin are the same. In the expansion method according to one aspect of the present invention, it is preferable that the composition of the first adhesive layer and the composition of the second adhesive layer are the same. In the expansion method according to one aspect of the present invention, it is preferable that the thickness of the first adhesive layer and the thickness of the second adhesive layer are the same. In the expansion method according to one aspect of the present invention, in the bonding process, the first adhesive layer is bonded to the plurality of adherends, and in the energy ray irradiation process, from the side of the second adhesive layer It is ideal to harden the first adhesive layer and the second adhesive layer by irradiating energy rays. In the expansion method according to one aspect of the present invention, the coating system semiconductor wafer is preferably used. According to one aspect of the present invention, there is provided a method for manufacturing a semiconductor device, which includes the expansion method of the above-mentioned aspect of the present invention, and is characterized by: Including the process of cutting the workpiece adhered to the cutting adhesive sheet and obtaining individual pieces of the plurality of adhered bodies, In the aforementioned bonding process, the first adhesive layer or the second adhesive layer of the adhesive sheet is bonded to the surface of the plurality of adherends opposite to the surface in contact with the cutting adhesive sheet, After the above-mentioned sticking process, a process of separating the above-mentioned cutting adhesive sheet and the above-mentioned plurality of adherends is performed. In the method for manufacturing a semiconductor device according to one aspect of the present invention, after the adhesive sheet for cutting and the plurality of adherends are separated, the expansion process is performed. In the manufacturing method of a semiconductor device according to one aspect of the present invention, the dicing adhesive sheet contains expandable microparticles, and the expandable microparticles are expanded during the process of separating the dicing adhesive sheet from the plurality of adherends. To separate the plurality of adherends attached to the adhesive sheet and the cutting adhesive sheet. A method for manufacturing a semiconductor device according to one aspect of the present invention includes: The second transfer process is to transfer the aforementioned plurality of adherends to a second adhesive sheet having a second base material and a third adhesive layer after the aforementioned expansion process; and The third transfer process is to transfer the plurality of adherends attached to the second adhesive sheet to a third adhesive sheet having a third base material and a fourth adhesive layer, The aforementioned third adhesive sheet contains expandable microparticles. In the second transfer step, the third adhesive sheet is attached to the surface of the plurality of adherends opposite to the surface in contact with the first adhesive layer or the second adhesive layer. The agent layer separates the aforementioned adhesive sheet from the plurality of adherends, In the third transfer step, the fourth adhesive layer of the third adhesive sheet is attached to the surface of the plurality of adherends opposite to the surface in contact with the third adhesive layer. The second adhesive sheet is separated from the adherend. According to one aspect of the present invention, an adhesive sheet is provided, which is characterized by: a first adhesive layer containing a first energy ray curable resin; a second adhesive layer containing a second energy ray curable resin; and The base material between the aforementioned first adhesive layer and the aforementioned second adhesive layer, is used in expansion methods with the following projects, The adhering process involves adhering the first adhesive layer or the second adhesive layer of the adhesive sheet to a plurality of adherends; Expansion process, which is to expand the aforementioned adhesive sheet to expand the distance between the aforementioned plurality of adherent bodies; and The energy ray irradiation process is to irradiate the first adhesive layer and the second adhesive layer with energy rays to harden the first adhesive layer and the second adhesive layer. In the adhesive sheet according to one aspect of the present invention, it is preferable that the first energy ray curable resin and the second energy ray curable resin are the same. In the adhesive sheet according to one aspect of the present invention, it is preferable that the composition of the first adhesive layer and the composition of the second adhesive layer are the same. In the adhesive sheet according to one aspect of the present invention, it is preferable that the thickness of the first adhesive layer and the thickness of the second adhesive layer are the same. According to the present invention, there is provided an expansion method that can maintain the shape of an adhesive sheet after expansion in an expansion process, and an adhesive sheet used in the expansion method. According to another aspect of the present invention, a method of manufacturing a semiconductor device including the expansion method can be provided.

Hereinafter, one embodiment of the present invention will be described. The adhesive sheet of this embodiment has a base material, a first adhesive layer containing a first energy ray curable resin, and a second adhesive layer containing a second energy ray curable resin. [Adhesive Sheet] FIG. 1 is a schematic cross-sectional view showing an adhesive sheet 10 according to one aspect of this embodiment. The adhesive sheet 10 has a base material 11 , a first adhesive layer 12 and a second adhesive layer 13 . The adhesive sheet 10 may have any shape, such as a tape shape (long form) and a label shape (single piece form). In order to distinguish it from other adhesive sheets, the adhesive sheet of this embodiment may be called a first adhesive sheet. (Base material) The base material 11 has a first base material surface 11A and a second base material surface 11B on the opposite side to the first base material surface 11A. In the adhesive sheet 10 of this embodiment, the first adhesive layer 12 is provided on the first base material surface 11A, and the second adhesive layer 13 is provided on the second base material surface 11B. From the viewpoint of easily extending the material, the material of the base material 11 is preferably a thermoplastic elastomer or a rubber-based material, and a thermoplastic elastomer is more preferably used. In addition, from the viewpoint of making it easier to extend the stretch, it is preferable to use a resin with a relatively low glass transition temperature (Tg) as the material of the base material 11 . The glass transition temperature (Tg) of such a resin is preferably 90°C or lower, more preferably 80°C or lower, and even more preferably 70°C or lower. Examples of thermoplastic elastomers include urethane elastomers, olefin elastomers, vinyl chloride elastomers, polyester elastomers, styrene elastomers, acrylic elastomers, and amide elastomers. . The thermoplastic elastomer can be used individually by 1 type or in combination of 2 or more types. It is preferable to use a urethane elastomer as a thermoplastic elastomer from the viewpoint of easily extending it to a large extent. Urethane elastomers are generally obtained by reacting long-chain polyols, chain extenders and diisocyanates. Urethane elastomer is composed of a soft segment having structural units derived from a long-chain polyol, and a hard segment having a polyurethane structure obtained from the reaction of a chain extender and diisocyanate. . If urethane elastomers are classified according to the type of long-chain polyol, they can be divided into: polyester-based polyurethane elastomers, polyether-based polyurethane elastomers, and polycarbonate Ester polyurethane elastomer, etc. The urethane elastomer can be used individually by 1 type or in combination of 2 or more types. In this embodiment, the urethane-based elastomer is preferably a polyether-based polyurethane elastomer from the viewpoint of making it easier to extend the stretch. Examples of long-chain polyols include polyester polyols such as lactone-based polyester polyol and adipate-based polyester polyol; polypropylene (ethylene) polyol; and polytetramethylene ether polyol. Diols, polyether polyols, etc.; polycarbonate polyols, etc. In this embodiment, it is preferable that the long-chain polyol is an adipate-based polyester polyol from the viewpoint of easily extending the polyol. Examples of diisocyanates include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, hexamethylene diisocyanate, and the like. In this embodiment, the diisocyanate is preferably hexamethylene diisocyanate from the viewpoint of easily extending the diisocyanate. Examples of the chain extender include low molecular weight polyols (for example, 1,4-butanediol, 1,6-hexanediol, etc.), aromatic diamines, and the like. Among these, it is preferable to use 1,6-hexanediol from the viewpoint of easy extension. Examples of olefin-based elastomers include ethylene･α-olefin copolymers, propylene･α-olefin copolymers, butene･α-olefin copolymers, ethylene･propylene･α-olefin copolymers, ethylene･butene ･α-olefin copolymer, propylene･butene-α olefin copolymer, ethylene･propylene･butene-α･olefin copolymer, styrene･isoprene copolymer, and styrene･ethylene･butylene copolymer At least one type of resin elastomer is selected from the group. The olefin-based elastomer can be used individually by 1 type or in combination of 2 or more types. The density of the olefin-based elastomer is not particularly limited. For example, the density of the olefin-based elastomer is preferably 0.860 g/cm ³ or more and less than 0.905 g/cm ³ , more preferably 0.862 g/cm ³ or more and less than 0.900 g/cm ³ , and 0.864 g/cm ³ or more , less than 0.895g/cm ³ is particularly ideal. Since the density of the olefin-based elastomer meets the above range, the base material 11 has excellent unevenness following properties when attaching a semiconductor wafer as an adherend to an adhesive sheet. The olefin-based elastomer is one in which the mass ratio of the monomers composed of olefin-based compounds (also referred to as "olefin content ratio" in this specification) among all monomers used to form the elastomer is 50 mass. % or more and less than 100 mass% is ideal. When the olefin content is too low, the properties of an elastomer containing structural units derived from olefins are less likely to appear, and it is difficult for the base material 11 to exhibit flexibility and rubber elasticity. From the viewpoint of stably obtaining softness and rubber elasticity, the olefin content is preferably 50 mass% or more, and more preferably 60 mass% or more. Examples of styrene-based elastomers include styrene-conjugated diene copolymers, styrene-olefin copolymers, and the like. Specific examples of the styrene-conjugated diene copolymer include styrene-butadiene copolymer, styrene-butadiene-styrene copolymer (SBS), styrene-butadiene-butene- Unhydrogenated benzene such as styrene copolymer, styrene-isoprene copolymer, styrene-isoprene-styrene copolymer (SIS), styrene-ethylene-isoprene-styrene copolymer, etc. Ethylene-conjugated diene copolymer, styrene-ethylene/propylene-styrene copolymer (SEPS, hydrogenated product of styrene-isoprene-styrene copolymer), and styrene-ethylene-butylene-benzene Water-added styrene-conjugated diene copolymers of ethylene copolymers (SEBS, hydrogenated products of styrene-butadiene copolymer), etc. Industrially, examples of styrenic elastomers include Tufprene (manufactured by Asahi Kasei Co., Ltd.), Kraton (manufactured by Kraton Polymer Japan Co., Ltd.), Sumitomo TPE-SB (manufactured by Sumitomo Chemical Co., Ltd.), EPOFRIEND (manufactured by DAICEL Co., Ltd.) ), RABALON (manufactured by Mitsubishi Chemical Co., Ltd.), SEPTON (manufactured by Kuraray Co., Ltd.), and Tuftec (manufactured by Asahi Kasei Co., Ltd.). The styrenic elastomer may be a hydrogenated product or a non-hydrogenated product. The styrenic elastomer can be used alone or in combination of two or more types. Examples of rubber-based materials include natural rubber, synthetic isoprene rubber (IR), butadiene rubber (BR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), and propylene. Nitrile-butadiene copolymer rubber (NBR), butyl rubber (IIR), halogenated butyl rubber, acrylic rubber, urethane rubber, and polysulfide rubber, etc. The rubber-based material may be used singly or in combination of two or more of these. The base material 11 may be a laminated film in which a plurality of films made of the above-mentioned materials (for example, thermoplastic elastomer or rubber-based material) are laminated. In addition, the base material 11 may be a laminated film in which a film made of the above-described material (for example, a thermoplastic elastomer or a rubber-based material) and another film are laminated. The base material 11 may be a film made of the above-mentioned resin-based material as a main material and may contain additives. Examples of additives include pigments, dyes, flame retardants, plasticizers, antistatic agents, lubricants, fillers, and the like. Examples of pigments include titanium dioxide, carbon black, and the like. Examples of fillers include organic materials such as melamine resin, inorganic materials such as fumed silica, and metal materials such as nickel particles. The content of such additives is not particularly limited, but is preferably within a range in which the base material 11 can exhibit desired functions. The purpose of the base material 11 is to improve the adhesion with the adhesive layers (the first adhesive layer 12 and the second adhesive layer 13) laminated on the first base material surface 11A and the second base material surface 11B. Surface treatment or primer treatment can also be performed on one or both sides as desired. Examples of surface treatment include oxidation method, roughening method, and the like. An example of the primer treatment is a method of forming a primer layer on the surface of the base material 11 . Examples of the oxidation method include corona discharge treatment, ion discharge treatment, chromium oxidation treatment (wet type), flame treatment, hot air treatment, ozone treatment, and ultraviolet irradiation treatment. Examples of the roughening method include sand blasting, thermal spraying, and the like. Since the first adhesive layer 12 and the second adhesive layer 13 have an energy ray-curable adhesive, it is ideal that the base material 11 has permeability to energy rays. When the energy ray curable adhesive is an ultraviolet curable adhesive, it is preferable that the base material 11 is transparent to ultraviolet rays. When the energy ray curable adhesive is an electron ray curable adhesive, it is desirable that the base material 11 has electron beam permeability. The thickness of the base material 11 is not limited as long as the adhesive sheet 10 can function properly in the desired project. The thickness of the base material 11 is preferably 20 μm or more, and more preferably 40 μm or more. In addition, the thickness of the base material 11 is preferably 250 μm or less, and more preferably 200 μm or less. Furthermore, the standard deviation of the thickness of the base material 11 when the thickness is measured at multiple locations in the in-plane direction of the first base material surface 11A or the second base material surface 11B of the base material 11 at 2 cm intervals is ideally 2 μm or less, and 1.5 µm or less is more ideal, and 1 µm or less is even more ideal. Since the standard deviation is 2 μm or less, the adhesive sheet 10 has a highly precise thickness, and the adhesive sheet 10 can be stretched uniformly. At 23°C, the tensile elastic modulus of the base material 11 in the MD direction and CD direction is 10 MPa or more and 350 MPa or less respectively. At 23°C, the 100% stress in the MD direction and CD direction of the base material 11 is 3 MPa or more and 20 MPa or less respectively. for ideal. By having the tensile elastic modulus and 100% stress within the above ranges, the stretchable adhesive sheet 10 can be expanded. The 100% stress of the base material 11 is a value obtained as follows. A test piece with a size of 150 mm (length direction) × 15 mm (width direction) was cut out from the base material 11 . Both ends of the cut test piece in the length direction are grasped with clamps so that the length between the clamps becomes 100 mm. After grabbing the test piece with a clamp, it is stretched in the length direction at a speed of 200 mm/min, and the measured value of the tensile force when the length between the clamps becomes 200 mm is read. The 100% stress of the base material 11 is a value obtained by dividing the measured value of the tensile force read by the cross-sectional area of the base material 11 . The cross-sectional area of the base material 11 was calculated as the width direction length of 15 mm×the thickness of the base material 11 (test piece). This cutting is performed so that the flow direction (MD direction) or the direction orthogonal to the MD direction (CD direction) during the production of the base material 11 coincides with the longitudinal direction of the test piece. In addition, in this tensile test, the thickness of the test piece is not particularly limited and may be the same as the thickness of the base material to be tested. At 23° C., it is ideal that the breaking elongation in the MD direction and CD direction of the base material 11 is 100% or more. Since the breaking elongation of the base material 11 in the MD direction and the CD direction is each 100% or more, the adhesive sheet 10 can be expanded without breaking. The tensile elastic modulus (MPa) of the base material and the elongation at break (%) of the base material can be measured as follows. The base material was cut into 15 mm×140 mm to obtain a test piece. For this test piece, the breaking elongation and tensile elastic modulus at 23°C were measured in accordance with JIS K7161:2014 and JIS K7127:1999. Specifically, in a tensile testing machine (manufactured by Shimadzu Corporation, product name "Autograph AG-IS 500N"), the above-mentioned test piece was set to a distance between grips of 100 mm, and then pulled at a speed of 200 mm/min. Elongation test to measure the elongation at break (%) and tensile elastic modulus (MPa). In addition, the measurement was performed on both the flow direction (MD) and the perpendicular direction (CD) during the production of the base material. (Adhesive layer) In the adhesive sheet 10 of this embodiment, the first adhesive layer 12 and the second adhesive layer 13 contain an energy ray curable adhesive. It is preferable that the first energy ray curable resin containing the first adhesive layer 12 and the second energy ray curable resin containing the second adhesive layer 13 be the same resin. The composition of the first adhesive layer 12 and the composition of the second adhesive layer 13 are preferably the same. The thickness of the first adhesive layer 12 and the second adhesive layer 13 is not particularly limited. The thicknesses of the first adhesive layer 12 and the second adhesive layer 13 are independent, for example, preferably 10 μm or more, and more preferably 20 μm or more. In addition, the thicknesses of the first adhesive layer 12 and the second adhesive layer 13 are independent of each other, and are preferably 150 μm or less, and more preferably 100 μm or less. It is ideal that the thickness of the first adhesive layer 12 and the thickness of the second adhesive layer 13 are the same. Since the first energy ray curable resin and the second energy ray curable resin are the same resin, and the thickness of the first adhesive layer 12 and the thickness of the second adhesive layer 13 are the same, the first adhesive layer 12 The difference in the amount of shrinkage when the second adhesive layer 13 is cured will be eliminated or reduced, thereby suppressing the curling of the adhesive sheet 10 . Because the composition of the first adhesive layer 12 and the second adhesive layer 13 are the same, and the thickness of the first adhesive layer 12 and the thickness of the second adhesive layer 13 are the same, the first adhesive layer 12 The difference in shrinkage amount when the second adhesive layer 13 is hardened will be eliminated or reduced, and the curling of the adhesive sheet 10 can be suppressed. In addition, the first energy ray curable resin contained in the first adhesive layer 12 and the second energy ray curable resin contained in the second adhesive layer 13 may also be different resins. In this case, the difference between the amount of shrinkage when the first adhesive layer 12 is cured and the amount of shrinkage when the second adhesive layer 13 is cured is eliminated or reduced. The composition of layer 13 and the thickness of the adhesive layer are ideal. In order to eliminate or reduce the difference in the amount of shrinkage, for example, the compositions of the first adhesive layer 12 and the second adhesive layer 13 and the adhesive layer can be adjusted by appropriately selecting from materials that can be used for the adhesive layer described later. The thickness is enough. The first energy ray curable resin and the second energy ray curable resin are preferably ultraviolet curable resins. In this case, the first adhesive layer 12 and the second adhesive layer 13 can be hardened by ultraviolet rays without changing the energy rays irradiated to the respective adhesive layers, so the manufacturing process can be simplified. ･Energy ray curable resin (a1) It is preferable that the first adhesive layer 12 and the second adhesive layer 13 independently contain the energy ray curable resin (a1). The energy ray curable resin (a1) has a double bond having energy ray curability in the molecule. The adhesive layer containing energy ray curable resin is hardened by energy ray irradiation. Therefore, by hardening the first adhesive layer 12 and the second adhesive layer 13 provided on both sides of the base material 11 after the adhesive sheet 10 is expanded, the expanded state of the adhesive sheet 10 can be easily maintained. In addition, the adhesive layer containing energy ray curable resin is cured by energy ray irradiation and the adhesive force is reduced. When you want to separate the adherend and the adhesive sheet, you can easily separate them by irradiating energy rays to the adhesive layer. The energy ray curable resin (a1) is preferably a (meth)acrylic resin. The energy ray curable resin (a1) is preferably an ultraviolet curable resin, and more preferably an ultraviolet curable (meth)acrylic resin. The energy ray curable resin (a1) is a resin that polymerizes and hardens once it is irradiated with energy rays. Examples of energy rays include ultraviolet rays and electron rays. Examples of the energy ray curable resin (a1) include low molecular weight compounds (monofunctional monomers, polyfunctional monomers, monofunctional oligomers, and polyfunctional oligomers) having an energy ray polymerizable group. things). Specifically, as the energy ray curable resin (a1), trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxypentacrylate, dipentaerythritol hexaacrylate, Acrylic esters such as 1,4-butanediol diacrylate and 1,6-hexanediol diacrylate, dicyclopentadiene dimethoxy diacrylate, and isobornyl acrylate contain cyclic Aliphatic skeleton acrylates, as well as polyethylene glycol diacrylates, oligoester acrylates, urethane acrylate oligomers, epoxy modified acrylates, polyether acrylates, and itaconic acid oligos Polymers and other acrylate compounds. The energy ray curable resin (a1) can be used alone or in combination of two or more types. The molecular weight of the energy ray curable resin (a1) is usually 100 or more and 30,000 or less, preferably about 300 or more and 10,000 or less. ･(Meth)acrylic copolymer (b1) It is preferable that the first adhesive layer 12 and the second adhesive layer 13 each independently further contain the (meth)acrylic copolymer (b1). The (meth)acrylic copolymer is different from the energy ray curable resin (a1) mentioned above. The (meth)acrylic copolymer (b1) preferably has a carbon-carbon double bond having energy ray curability. That is, in this embodiment, the first adhesive layer 12 and the second adhesive layer 13 each independently contain an energy ray curable resin (a1) and an energy ray curable (meth)acrylic copolymer ( b1) is ideal. The first adhesive layer 12 and the second adhesive layer 13 each independently contain an energy ray curable resin ( a1) is ideal, and it is more preferable that it is contained in a ratio of 20 parts by mass or more, and it is even more desirable that it is contained in a ratio of 25 parts by mass or more. The first adhesive layer 12 and the second adhesive layer 13 each independently contain energy ray curable resin ( Although a1) is ideal, it is more preferably contained in a proportion of 70 parts by mass or less, and even more preferably it is contained in a proportion of 60 parts by mass or less. The weight average molecular weight (Mw) of the (meth)acrylic copolymer (b1) is preferably 10,000 or more, more preferably 150,000 or more, and still more preferably 200,000 or more. Moreover, the weight average molecular weight (Mw) of the (meth)acrylic copolymer (b1) is preferably 1.5 million or less, more preferably 1 million or less. In addition, the weight average molecular weight (Mw) in this specification is a standard polystyrene-converted value measured by Gel Permeation Chromatography (GPC). The (meth)acrylic copolymer (b1) is a (meth)acrylate polymer (b2) (hereinafter sometimes referred to as " Energy ray curable polymer (b2)") is ideal. The energy ray curable polymer (b2) is obtained by reacting an acrylic copolymer (b21) having a functional group-containing monomer unit and an unsaturated group-containing compound (b22) having a functional group bonded to the functional group. The copolymer is ideal. In addition, in this specification, (meth)acrylate means both acrylate and methacrylate. The same goes for other similar terms. The acrylic copolymer (b21) contains a structural unit guided by a monomer containing a functional group, and a structural unit guided by a (meth)acrylate monomer or a derivative of a (meth)acrylate monomer. . The functional group-containing monomer that is a constituent unit of the acrylic copolymer (b21) is preferably a monomer that has a polymerizable double bond and a functional group in the molecule. The functional group is preferably at least one selected from the group consisting of a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, an epoxy group, and the like. Examples of the hydroxyl-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl. (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate, etc. The hydroxyl group-containing monomer can be used alone or in combination of two or more types. Examples of the monomer containing a carboxyl group include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. The carboxyl group-containing monomer can be used alone or in combination of two or more types. Examples of the amino group-containing monomer or the substituted amino group-containing monomer include aminoethyl (meth)acrylate, n-butylaminoethyl (meth)acrylate, and the like. The amine group-containing monomer or the substituted amine group-containing monomer can be used alone or in combination of two or more types. As the (meth)acrylate monomer constituting the acrylic copolymer (b21), in addition to the alkyl (meth)acrylate having a carbon number of 1 or more and 20 or less in the alkyl group, for example, those having a lipid in the molecule can be used. Monomers with cyclic structures (monomers containing alicyclic structures). The alkyl (meth)acrylate is preferably an alkyl (meth)acrylate having a carbon number of 1 to 18 in the alkyl group. Alkyl (meth)acrylates are, for example, methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, n-butyl (meth)acrylate, and 2 -Ethylhexyl (meth)acrylate and the like are more preferred. Alkyl (meth)acrylate can be used individually by 1 type or in combination of 2 or more types. As the monomer containing an alicyclic structure, for example, cyclohexyl (meth)acrylate, dicyclopentyl (meth)acrylate, adamantyl (meth)acrylate, isocamphenyl (meth)acrylate, Dicyclopentenyl (meth)acrylate, dicyclopentenyloxyethyl (meth)acrylate, etc. The monomer containing an alicyclic structure can be used alone or in combination of two or more types. The acrylic copolymer (b21) preferably contains the structural unit guided by the above-mentioned functional group-containing monomer in a proportion of 1% by mass or more, more preferably in a proportion of 5% by mass or more, and in a proportion of 10% by mass or more Contains more ideal. In addition, the acrylic copolymer (b21) preferably contains the structural unit guided by the above-mentioned functional group-containing monomer in a proportion of 35 mass % or less, more preferably 30 mass % or less, and 25 mass % or less. The proportion is more ideal. Furthermore, the acrylic copolymer (b21) preferably contains a structural unit derived from a (meth)acrylate monomer or a derivative thereof in a proportion of 50% by mass or more, and more preferably in a proportion of 60% by mass or more. It is more desirable to contain it in a proportion of 70% by mass or more. Furthermore, the acrylic copolymer (b21) preferably contains a structural unit derived from a (meth)acrylate monomer or a derivative thereof in a proportion of 99% by mass or less, and more preferably in a proportion of 95% by mass or less. It is more preferable to contain it in a proportion of 90% by mass or less. The acrylic copolymer (b21) can be obtained by copolymerizing the above-described functional group-containing monomer and (meth)acrylic acid ester monomer or derivatives thereof by a common method. In addition to the above-mentioned monomers, the acrylic copolymer (b21) may contain at least one structural unit selected from the group consisting of dimethylacrylamide, vinyl formate, vinyl acetate, styrene, and the like. . An energy ray curable polymer can be obtained by reacting the acrylic copolymer (b21) having the above functional group-containing monomer unit and the unsaturated group-containing compound (b22) having a functional group bonded to the functional group. (b2). The functional group of the unsaturated group-containing compound (b22) can be appropriately selected according to the type of functional group of the functional group-containing monomer unit of the acrylic copolymer (b21). For example, when the functional group of the acrylic copolymer (b21) is a hydroxyl group, an amino group or a substituted amino group, it is preferable that the functional group of the unsaturated group-containing compound (b22) is an isocyanate group or an epoxy group. When the functional group of the acrylic copolymer (b21) is an epoxy group, the functional group of the unsaturated group-containing compound (b22) is preferably an amino group, a carboxyl group or an aziridinyl group. The unsaturated group-containing compound (b22) contains at least one energy-beam polymerizable carbon-carbon double bond in one molecule, preferably from 1 to 6, and more preferably from 1 to 4. . Examples of the unsaturated group-containing compound (b22) include 2-methacryloyloxyethyl isocyanate (2-isocyanatoethyl methacrylate), methylisopropenyl-α,α- Dimethylbenzyl isocyanate, methacrylyl isocyanate, allyl isocyanate, 1,1-(bisacrylyloxymethyl)ethyl isocyanate; by diisocyanate compound or polyisocyanate compound and hydroxyethyl ( Acrylyl monoisocyanate compound obtained by the reaction of meth)acrylate; Acrylyl monoisocyanate compound obtained by the reaction of diisocyanate compound or polyisocyanate compound with polyol compound and hydroxyethyl (meth)acrylate Compound; Glycidyl (meth)acrylate; (meth)acrylic acid, 2-(1-aziridinyl)ethyl (meth)acrylate, 2-vinyl-2-oxazoline , 2-isopropenyl-2-oxazoline, etc. The unsaturated group-containing compound (b22) is preferably used at a ratio (addition rate) of 50 mol% or more relative to the molar number of the functional group-containing monomer of the acrylic copolymer (b21). It is more ideal to use it at a ratio of molar % or more, and it is even more ideal to use it at a ratio of 70 molar % or more. In addition, the unsaturated group-containing compound (b22) is preferably used in a ratio of 95 mol% or less, and 93 mol% or less relative to the molar number of the functional group-containing monomer of the acrylic copolymer (b21). It is more ideal to use it in a ratio of 90 mol% or less. In the reaction between the acrylic copolymer (b21) and the unsaturated group-containing compound (b22), the functional group of the acrylic copolymer (b21) and the function of the unsaturated group-containing compound (b22) can be Based on the combination of bases, the reaction temperature, pressure, solvent, time, presence or absence of catalyst, and type of catalyst can be appropriately selected. Thereby, the functional group of the acrylic copolymer (b21) reacts with the functional group of the unsaturated group-containing compound (b22), and the unsaturated group is introduced into the side chain of the acrylic copolymer (b21). , energy ray curable polymer (b2) can be obtained. The weight average molecular weight (Mw) of the energy ray curable polymer (b2) is preferably 10,000 or more, more preferably 150,000 or more, and still more preferably 200,000 or more. Moreover, the weight average molecular weight (Mw) of the energy ray curable polymer (b2) is preferably 1.5 million or less, more preferably 1 million or less. ･Photopolymerization initiator (C) It is preferable that the first adhesive layer 12 and the second adhesive layer 13 independently contain the photopolymerization initiator (C). Since the first adhesive layer 12 and the second adhesive layer 13 contain the photopolymerization initiating agent (C), the polymerization hardening time and the amount of light irradiation can be reduced. Specific examples of the photopolymerization initiator (C) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, and benzoin isopropyl ether. Butyl ether, benzoic acid, benzoic acid methyl ester, benzodimethyl acetal, 2,4-diethylthioxanthone (thioxanthone), 1-hydroxycyclohexyl phenyl ketone, Benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, diphenylethylenedione, bibenzyl, diethyl, β-chloroanthraquinone, (2,4 , 6-trimethylbenzyldiphenyl)phosphine oxide, 2-benzothiazole-N,N-diethyldithiocarbamate, oligomeric {2-hydroxy-2-methyl-1 -[4-(1-propenyl)phenyl]acetone}, and 2,2-dimethoxy-1,2-diphenylethane-1-one, etc. These photopolymerization initiating agents (C) may be used individually by 1 type or in combination of 2 or more types. The photopolymerization initiator (C) is used when blending the energy ray curable resin (a1) and the (meth)acrylic copolymer (b1) in the adhesive layer relative to the energy ray curable resin (a1) and (meth) The total amount of the acrylic copolymer (b1) per 100 parts by mass is preferably 0.1 parts by mass or more, and more preferably 0.5 parts by mass or more. Moreover, when the energy ray curable resin (a1) and the (meth)acrylic copolymer (b1) are blended in the adhesive layer, the photopolymerization initiator (C) is The total amount of the acrylic copolymer (b1) is preferably 10 parts by mass or less, and more preferably 6 parts by mass or less based on 100 parts by mass of the total acrylic copolymer (b1). In addition to the above-mentioned components, the first adhesive layer 12 and the second adhesive layer 13 may also be appropriately blended with other components. Examples of other components include cross-linking agent (E) and the like. ･Crosslinking agent (E) As the crosslinking agent (E), a polyfunctional compound having reactivity with a functional group possessed by the (meth)acrylic copolymer (b1) or the like can be used. Examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, and metal chelates. chemical compounds, metal salts, ammonium salts and reactive phenolic resins, etc. The compounding amount of the cross-linking agent (E) is preferably 0.01 parts by mass or more, more preferably 0.03 parts by mass or more, and even more preferably 0.04 parts by mass or more based on 100 parts by mass of the (meth)acrylic copolymer (b1). In addition, the compounding amount of the cross-linking agent (E) is preferably 8 parts by mass or less, more preferably 5 parts by mass or less, and even more preferably 3.5 parts by mass or less based on 100 parts by mass of the (meth)acrylic copolymer (b1). . The recovery rate of the adhesive sheet of this embodiment is preferably 70% or more, more preferably 80% or more, and even more preferably 85% or more. The recovery rate of the adhesive sheet of this embodiment is preferably 100% or less. By keeping the recovery rate within the above range, the stretchable adhesive sheet can be expanded. The aforementioned recovery rate is obtained by cutting the adhesive sheet 10 into a test piece of 150 mm (length direction) × 15 mm (width direction), and holding both ends in the length direction with clamps so that the length between the clamps becomes 100 mm. , then, stretch at a speed of 200mm/min until the length between the clamps becomes 200mm, keep it for 1 minute with the length between the clamps expanded to 200mm, and then return to the length direction at a speed of 200mm/min. The length between the clamps was 100mm, and the length between the clamps was returned to 100mm. The state was maintained for 1 minute, and then stretched in the length direction at a speed of 60mm/min. The measured value of the tensile force showed 0.1N/15mm. The length between the clamps at When the length after the length of 100mm is L1 (mm), it is calculated by the following mathematical formula (Formula 2). Recovery rate (%) = {1-(L2÷L1)}×100 ･･･ (Formula 2) (Peel-off sheet) The adhesive sheet 10 of this embodiment has the first adhesive layer 12 or the second adhesive layer 13 During the period until the adherend (such as a semiconductor chip, etc.) is attached, in order to protect the first adhesive layer 12 and the second adhesive layer 13, the first adhesive layer 12 and the second adhesive layer 13 may also be laminated. Peel off the sheet. The structure of the peelable sheet is arbitrary. An example of a release sheet is a plastic film that has been released using a release agent or the like. Specific examples of plastic films include polyester films and polyolefin films. Examples of the polyester film include films of polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, and the like. Examples of the polyolefin film include films of polypropylene, polyethylene, and the like. As the release agent, polysilicone-based, fluorine-based, long-chain alkyl-based, etc. can be used. Among these strippers, polysiloxane is ideal because it is cheap and can achieve stable performance. The thickness of the peelable sheet is not particularly limited. The thickness of the peeled sheet is usually 20 μm or more and 250 μm or less. (Method for Manufacturing Adhesive Sheet) The adhesive sheet 10 of this embodiment can be manufactured in the same manner as a conventional adhesive sheet. The manufacturing method of the adhesive sheet 10 is not particularly limited, as long as the first adhesive layer 12 is laminated on the first base material surface 11A of the base material 11, and the second adhesive layer 13 is laminated on the second base material surface 11B. That is, Can. As a first example of the manufacturing method of the adhesive sheet 10, the following general method can be mentioned. First, an adhesive composition constituting the first adhesive layer 12 and a coating liquid (sometimes referred to as a first coating liquid) further containing a solvent or dispersion medium as desired, and a coating composition constituting the second adhesive layer 13 are prepared. An adhesive composition, and a coating fluid (sometimes referred to as a second coating fluid) further containing a solvent or dispersion medium as desired. Next, the first coating liquid is applied on the first base material surface 11A of the base material 11 by a coating means to form a coating film. Examples of the coating means include an extrusion coater (die coater), a curtain coater, a spray coater, a slit coater, a knife coater, and the like. Next, by drying the coating film, the first adhesive layer 12 can be formed. The coating liquid is not particularly limited as long as it can be coated. The coating fluid may contain a component for forming an adhesive layer as a solute, or may contain a component for forming an adhesive layer as a dispersoid. The second adhesive layer 13 is formed by applying the second coating liquid on the second base material surface 11B of the base material 11 in the same manner as the first adhesive layer 12 . As a modification of the first example, the second adhesive layer 13 may be formed first, and then the first adhesive layer 12 may be formed. Moreover, as a second example of the manufacturing method of an adhesive sheet, the following general method can be mentioned. First, the first coating liquid is applied to the peeling surface of the aforementioned peeling sheet to form a first coating film. Next, the first coating film is dried to form a laminate composed of the first adhesive layer 12 and the release sheet. Next, the base material 11 is attached to the surface of the adhesive layer of the laminate opposite to the surface on which the sheet is released. Next, the second coating liquid is applied to the exposed surface of the base material 11 to form a second coating film. The second coating film is dried to form the second adhesive layer 13 . In this way, a laminate in which the release sheet, the first adhesive layer 12 , the base material 11 and the second adhesive layer 13 are laminated is formed. A release sheet may be further laminated on the second adhesive layer 13 of the laminate. The peelable sheet of the laminated body can be peeled off as an engineering material, or can be used to protect the adhesive layer until the adherend (such as a semiconductor chip, semiconductor wafer, etc.) is attached to the adhesive layer. As a modification of the second example, a method of first forming a laminate composed of the release sheet, the second adhesive layer 13 and the base material 11 and then forming the first adhesive layer 12 on the laminate may be used. Moreover, as a third example of the manufacturing method of an adhesive sheet, the following general method can be mentioned. Similar to the second example described above, a first laminate in which a release sheet (first release sheet), first adhesive layer 12 and base material 11 are laminated is formed. On the other hand, the second coating liquid is applied to the peeling surface of another peeling sheet (second peeling sheet) to form a second coating film. Next, the second coating film is dried to form a second laminate composed of the second adhesive layer 13 and the second release sheet. By bonding the second adhesive layer 13 of the second laminated body to the exposed surface of the base material 11 of the first laminated body, a layer in which the first release sheet, the first adhesive layer 12, the base material 11, and the second adhesive layer are laminated is formed. The third laminate of the adhesive layer 13 and the second release sheet. The peeling sheet of the third laminated body can also be peeled off as an engineering material, or it can protect the adhesive layer until the adherend (such as a semiconductor chip, a semiconductor wafer, etc.) is attached to the adhesive layer. As a modification of the third example, a first laminated body composed of the peelable sheet, the second adhesive layer 13 and the base material may be formed, and a second laminate composed of the peelable sheet and the first adhesive layer 12 may be formed. The laminated body is a method of bonding the first laminated body and the second laminated body. In addition, the order in which the first adhesive layer 12 and the second adhesive layer 13 are laminated on the base material 11 is not particularly limited. When the coating fluid contains a cross-linking agent, by changing the drying conditions of the coating film (such as temperature and time, etc.), or by performing additional heat treatment, the (meth)acrylic copolymer in the coating film can be (b1) The cross-linking reaction with the cross-linking agent progresses and a cross-linking structure is formed at the desired density in the adhesive layer. In order to make this bridging reaction fully progress, the first adhesive layer 12 and the second adhesive layer 13 can also be laminated on the base material 11 by the above-mentioned method, for example, at 23° C. and a relative humidity of 50%. The health of the adhesive sheet obtained by letting it sit for several days is 10%. The thickness of the adhesive sheet 10 of this embodiment is preferably 30 μm or more, and more preferably 50 μm or more. In addition, the thickness of the adhesive sheet 10 is preferably 400 μm or less, and more preferably 300 μm or less. [How to use the adhesive sheet] The adhesive sheet 10 of this embodiment can be adhered to various adherends, so the adherends to which the adhesive sheet 10 of this embodiment can be applied are not particularly limited. For example, it is ideal that the object to be adhered is a semiconductor wafer or semiconductor wafer. The adhesive sheet 10 of this embodiment can also be applied to the expansion method. Specifically, the expansion method using the adhesive sheet 10 may include an expansion method having the following processes: an adhesion process of adhering a plurality of objects to be adhered to the first adhesive layer 12 or the second adhesive layer 13, and an adhesion process. The thin plate 10 is expanded to expand the distance between the plurality of adherends, and the first adhesive layer 12 and the second adhesive layer 13 are irradiated with energy rays, so that the first adhesive layer 12 and the second adhesive layer are Energy ray irradiation process for layer 13 hardening. Regarding this expansion method, in the adhesion process, the first adhesive layer 12 is adhered to the plurality of adherends mentioned above, and in the energy ray irradiation process, energy rays are irradiated from the second adhesive layer 13 side, so that the first The adhesive layer 12 and the second adhesive layer 13 are preferably in a hardened state. The adhesive sheet 10 of this embodiment can be used for semiconductor processing, for example. Furthermore, the adhesive sheet 10 of this embodiment can be used to expand the distance between a plurality of semiconductor wafers adhered to one side of the base material 11 . The above-mentioned expansion method using the adhesive sheet 10 is also applicable in semiconductor processing. Specifically, when the object to be adhered is a semiconductor wafer or a semiconductor wafer, an expansion method using the adhesive sheet 10 may be included as one of the manufacturing methods of the semiconductor device. The expansion interval of the plurality of semiconductor wafers depends on the size of the semiconductor wafer and is not particularly limited. The adhesive sheet 10 is ideally used to expand the mutual distance between adjacent semiconductor wafers of a plurality of semiconductor wafers adhered to one surface of the adhesive sheet 10 by 200 μm or more. In addition, the upper limit of the distance between the semiconductor wafers is not particularly limited. The upper limit of the distance between the semiconductor wafers may be, for example, 6000 μm. In addition, the adhesive sheet 10 of this embodiment can also be used when the distance between a plurality of semiconductor wafers stacked on one side of the adhesive sheet 10 is expanded by at least two-axis stretching. In this case, the adhesive sheet 10 is elongated by applying tension in four directions of the +X-axis direction, the -X-axis direction, the +Y-axis direction, and the -Y-axis direction, which are orthogonal to each other, such as the X-axis and the Y-axis. More specifically, In other words, they are respectively elongated in the MD direction and CD direction of the base material 11 . The above-described biaxial stretching can be performed, for example, using a spacing device that applies tension in the X-axis direction and the Y-axis direction. Here, the X-axis and the Y-axis are orthogonal, let one of the directions parallel to the X-axis be the +X-axis direction, and let the direction opposite to the +X-axis direction be the -X-axis direction. , let one of the directions parallel to the Y-axis be the +Y-axis direction, and let the direction opposite to the +Y-axis direction be the -Y-axis direction. The above-described separation device applies tension to the adhesive sheet 10 in four directions: +X-axis direction, -X-axis direction, +Y-axis direction, and -Y-axis direction. It has a plurality of holding means and corresponding support for each of these four directions. It is ideal to provide these plural tension means. The number of holding means and tension applying means in each direction depends on the size of the adhesive sheet 10, and may be, for example, 3 or more and 10 or less. Here, in a group including a plurality of holding means and a plurality of tensioning means provided to apply tension in the +X-axis direction, for example, each holding means is provided with a holding member for holding the adhesive sheet 10, and the tension of each It is preferable that the applying means moves the holding member corresponding to the tension applying means in the +X-axis direction to apply tension to the adhesive sheet 10 . Furthermore, it is preferable that the plurality of tension applying means independently move the holding means in the +X-axis direction. Furthermore, it is ideal to have the same structure in a group including three groups including plural holding means and plural tension applying means for applying tension in each of the -X axis direction, the +Y axis direction and the -Y axis direction. . Thereby, the above-mentioned spacing device can apply different magnitudes of tension to the adhesive sheet 10 in each area in the direction orthogonal to each direction. Generally, four holding members are used to hold the adhesive sheet 10 in four directions: +X-axis direction, -X-axis direction, +Y-axis direction, and -Y-axis direction. When extending in these four directions, the adhesive sheet 10 In addition to the four directions, in the combined directions (for example, the combined direction of the +X-axis direction and the +Y-axis direction, the combined direction of the +Y-axis direction and the -X-axis direction, the -X-axis direction and the -Y-axis direction The combined direction of the direction and the combined direction of the -Y axis direction and the +X axis direction) are also given tension. As a result, the distance between the semiconductor wafers in the inner region of the adhesive sheet 10 may be different from the distance between the semiconductor wafers in the outer region. However, since the above-mentioned separation devices are in the respective directions of the +X-axis direction, the -X-axis direction, the +Y-axis direction, and the -Y-axis direction, a plurality of tension applying means can independently apply tension to the adhesive sheet 10. Therefore, The adhesive sheet 10 can be extended in such a manner that the difference in the distance between the inside and the outside of the adhesive sheet 10 is eliminated. As a result, the distance between semiconductor wafers can be accurately adjusted. FIG. 2 is a plan view illustrating the expansion device 100 as an example of a biaxially extendable expansion device (distance device). In Figure 2, the X-axis and the Y-axis are in an orthogonal relationship with each other. Let the positive direction of the X-axis be the +X-axis direction, let the negative direction of the X-axis be the -X-axis direction, and let the Y-axis Let the positive direction of the axis be the +Y-axis direction, and let the negative direction of the Y-axis be the -Y-axis direction. The adhesive sheet 10 can be disposed on the expansion device 100 in such a manner that each side thereof is parallel to the X-axis or the Y-axis. As a result, the MD direction of the base material 11 of the adhesive sheet 10 becomes parallel to the X-axis or the Y-axis. In addition, in FIG. 2, the object to be adhered (semiconductor wafer) is omitted. As shown in FIG. 2 , the expansion device 100 is provided with five holding means 101 in each of the +X-axis direction, the -X-axis direction, the +Y-axis direction, and the -Y-axis direction (20 holding means 101 in total). . Among the five holding means 101 in each direction, the holding means 101A is located at both ends, the holding means 101C is located in the center, and the holding means 101B is located between the holding means 101A and the holding means 101C. Each side of the adhesive sheet 10 can be held by the holding means 101 . The expansion device 100 includes a plurality of tension applying means (not shown) corresponding to each of the holding means 101 . By driving the tension applying means, the holding means 101 can be moved independently. The five holding means 101 holding one side of the +X-axis direction side of the adhesive sheet 10 can be moved in the +X-axis direction at a first extension speed for a predetermined time, for example. At the same time, among the five holding means 101, the holding means 101A and the holding means 101B can also be moved in a direction away from the holding means 101C (that is, the +Y-axis direction or the -Y-axis direction). At this time, the holding means 101A moves at a speed slower than the first extension speed (for example, 2/3 of the first extension speed), and the holding means 101B can move at a speed slower than the first extension speed (for example, a speed of 2/3 of the first extension speed). Move at 1/3 of the first extension speed). In addition, the holding means 101C does not need to be moved in the +Y-axis direction and the -Y-axis direction. The holding means 101 located on the three-directional sides other than the +X-axis direction of the adhesive sheet 10 can also move in each direction and move the holding means 101A and the holding means 101B away from the holding means 101C in the same manner as in the +X-axis direction. movement in the direction. The above-mentioned separation device is preferably further equipped with a measuring means for measuring the mutual distance between the semiconductor wafers. Here, it is preferable that the tension imparting means can move and provide a plurality of holding members individually based on the measurement results of the measuring means. Since the spacing device is provided with a measuring means, the spacing between the semiconductor wafers can be further adjusted based on the measurement result of the spacing between the semiconductor wafers by the measuring means. As a result, the spacing between the semiconductor wafers can be adjusted more accurately. In the above-described separation device, examples of the holding means include a chuck means and a pressure reducing means. Examples of the chuck means include a mechanical chuck and a chuck cylinder. Examples of the pressure reducing means include a pressure reducing pump and a vacuum ejector. Furthermore, in the above-described separation device, the holding means may be configured to support the adhesive sheet 10 using adhesive, magnetic force, or the like. In addition, as the holding member of the chuck means, for example, a holding member having a structure including a lower supporting member that supports the adhesive sheet 10 from below, a driving machine that is supported from below, and an upper supporting member can be used. The upper support member is supported by the output shaft of the driving machine and can be driven by the driving machine to push the adhesive sheet 10 from above. Examples of the driving device include electric machines, actuators, and the like. Examples of electric machines include rotary motors, linear motors, linear motors, single-axis robots, multi-joint robots, and the like. Examples of the actuator include a pneumatic cylinder, a hydraulic cylinder, a rodless cylinder, a rotary cylinder, and the like. Furthermore, in the above-described separation device, the tension applying means includes a driving device, and the holding member can be moved by the driving device. As the driving device included in the tension applying means, the same driving device as the driving device included in the above-mentioned holding member can be used. For example, the tension imparting means may include a linear motor as a driving machine, and an output shaft interposed between the linear motor and the holding member. The driven linear motor moves the holding member via the output shaft. . When the adhesive sheet 10 of this embodiment is used to enlarge the distance between the semiconductor wafers, the distance between the semiconductor wafers may be enlarged from a state in which the semiconductor wafers are in contact with each other or a state in which the distance between the semiconductor wafers is hardly enlarged, or the distance between the semiconductor wafers may be enlarged from The interval has been expanded to a predetermined interval and then the interval is expanded. When the distance between the semiconductor wafers is increased from a state in which the semiconductor wafers are in contact with each other or a state in which the distance between the semiconductor wafers is hardly increased, for example, a plurality of semiconductor wafers are obtained by dividing the semiconductor wafer on a dicing sheet, and then the semiconductor wafers are converted from the dicing sheet. A number of semiconductor wafers are printed onto the adhesive sheet 10 of this embodiment, and then the distance between the semiconductor wafers can be expanded. Alternatively, the semiconductor wafer may be divided on the adhesive sheet 10 of this embodiment to obtain a plurality of semiconductor wafers, and then the intervals between the semiconductor wafers may be widened. When the distance between the semiconductor wafers has already been widened to a predetermined distance and then the distance is widened, another adhesive sheet is used, and preferably the adhesive sheet 10 of this embodiment is used to widen the distance between the semiconductor wafers to a predetermined distance. After the distance between the semiconductor wafers is transferred from the adhesive sheet 10 to another adhesive sheet 10 of this embodiment, and then by extending the adhesive sheet 10 of this embodiment, the distance between the semiconductor wafers can be further expanded. In addition, such transfer of the semiconductor wafer and extension of the adhesive sheet may be repeated a plurality of times until the distance between the semiconductor wafers becomes a desired distance. [Method for Manufacturing a Semiconductor Device] The method for manufacturing a semiconductor device according to this embodiment preferably includes an expansion method using the adhesive sheet 10 of this embodiment. The manufacturing method of a semiconductor device according to this embodiment includes a process (dicing process) of cutting a workpiece (semiconductor wafer) adhered to a dicing adhesive sheet and obtaining individual pieces of a plurality of adherends (semiconductor wafers). ) is ideal. It is ideal for cutting adhesive sheets containing expandable particles. In the bonding process of the semiconductor device manufacturing method of this embodiment, the first adhesive layer of the adhesive sheet 10 is bonded to the surface of a plurality of adherends (semiconductor wafers) opposite to the surface in contact with the dicing adhesive sheet. 12 or the second adhesive layer 13 is ideal. In the method of manufacturing a semiconductor device according to this embodiment, it is preferable to perform a process of separating the adhesive sheet for dicing from a plurality of adherends (semiconductor wafers) after the bonding process. When the dicing adhesive sheet is made of expandable particles, it is ideal to expand the expandable particles to separate the plurality of adherends (semiconductor wafers) attached to the adhesive sheet 10 from the dicing adhesive sheet. In the method of manufacturing a semiconductor device according to this embodiment, it is preferable to perform an expansion process after separating the adhesive sheet for dicing and the plurality of adherends (semiconductor wafers). The method of manufacturing a semiconductor device according to this embodiment includes a process of transferring a plurality of adherends (semiconductor wafers) to a second adhesive sheet having a second base material and a third adhesive layer (transfer process). for ideal. The second adhesive sheet ideally contains expandable particles. In the method of manufacturing a semiconductor device according to this embodiment, the second adhesive is affixed to the surface opposite to the surface in contact with the first adhesive layer 12 or the second adhesive layer 13 of the plurality of adherends (semiconductor wafers). The third adhesive layer of the sheet is ideal for separating the plurality of adherends (semiconductor wafers) attached to the second adhesive sheet from the adhesive sheet 10 . When the second adhesive sheet contains expandable particles, it is ideal to expand the expandable particles to separate the plurality of adherends (semiconductor wafers) from the second adhesive sheet. Furthermore, the adhesive sheet 10 of this embodiment is ideally used in applications that require relatively large spacing between semiconductor wafers. An example of such an application is fan-out semiconductor wafer-level packaging (FO-WLP). manufacturing method. As an example of such a FO-WLP manufacturing method, the first aspect described below can be cited. (First Embodiment) Next, a first Embodiment of the manufacturing method of FO-WLP using the adhesive sheet 10 of this embodiment will be described. FIG. 3A shows a semiconductor wafer W as a workpiece which is adhered to a dicing adhesive sheet A as a dicing sheet. The semiconductor wafer W has a circuit surface W1, and a circuit W2 is formed on the circuit surface W1. The adhesive sheet A for dicing is adhered to the back surface W3 of the semiconductor wafer W opposite to the circuit surface W1. The adhesive sheet A for cutting has a base material A1 and an adhesive layer A2. The adhesive layer A2 is laminated on the base material A1. [Dicing Process] FIG. 3B shows a state in which the plurality of formed semiconductor wafers CP are held by the adhesive sheet A for dicing after the semiconductor wafer W is cut. The semiconductor wafer W held by the adhesive sheet A for dicing is diced into individual pieces to form a plurality of semiconductor wafers CP (sometimes called a dicing process). The semiconductor wafer CP has a circuit surface W1 and a back surface W3 opposite to the circuit surface W1. A circuit W2 is formed on the circuit surface W1. Cutting is a cutting means using a cutting saw or the like. The dicing may be performed by irradiating the semiconductor wafer W with laser light instead of the cutting means. For example, the semiconductor wafer W can be completely cut off by irradiation with laser light and divided into individual semiconductor wafers. Alternatively, after the modified layer is formed inside the semiconductor wafer W by laser light irradiation, the semiconductor wafer may be broken at the position of the modified layer by elongating the adhesive sheet in the expansion process described below. , individual pieces are turned into semiconductor wafers CP. The method of singulating such slices into semiconductor wafers is sometimes called stealth dicing. During stealth dicing, the irradiation of laser light is, for example, irradiation of laser light in the infrared region so as to be focused on a focal point set inside the semiconductor wafer W. Furthermore, in these methods, laser light irradiation can be performed from either side of the semiconductor wafer W. After dicing, it is ideal that the plurality of semiconductor wafers CP are collectively transferred to the expanded sheet. It is ideal for the adhesive sheet A for cutting to contain expandable microparticles. In this case, it is preferable that at least one of the base material A1 and the adhesive layer A2 contains expandable fine particles. The expandable microparticles are not particularly limited, as long as they expand themselves due to external stimulation and form unevenness on the surface of the adhesive layer, thereby reducing the adhesion to the adherend (semiconductor wafer). Examples of the expandable fine particles include heat-expandable fine particles that expand by heating, energy-ray-expandable fine particles that expand by irradiation with energy rays, and the like. From the viewpoint of versatility and handleability, the expandable fine particles are preferably thermally expandable fine particles. By expanding the expandable fine particles contained in the adhesive sheet A for cutting, unevenness is formed on the adhesive surface of the adhesive layer A2, thereby reducing the contact area between the adhesive surface of the adhesive layer A2 and the semiconductor wafer CP, thereby improving the adhesive force. Significantly reduced. As a result, when the adhesive sheet A for dicing is separated from the semiconductor wafer CP, there is no paste residue on the semiconductor wafer CP, etc., the cleanliness of the semiconductor wafer CP is maintained, and the semiconductor wafer CP can be easily separated from the adhesive sheet A for dicing in one go. . [First Transfer Process] FIG. 3C is a diagram illustrating a process of transferring a plurality of semiconductor wafers CP to the adhesive sheet 10 of this embodiment after the dicing process. This process is sometimes called the "transfer process", and to distinguish it from other transfer processes, it is also sometimes called the "first transfer process". (First bonding process) The first transfer process includes bonding the adhesive sheet 10 to the surface (circuit surface W1) of the plurality of semiconductor wafers CP opposite to the surface (back surface W3) in contact with the dicing adhesive sheet A. The process of the first adhesive layer 12 or the second adhesive layer 13. This process is sometimes called "adhesion process", and to distinguish it from other adhesion processes, it is also sometimes called "first adhesion process". In the first form, the first adhesive layer 12 is attached to the circuit surface W1 of a plurality of semiconductor wafers CP. The adhesive sheet 10 is ideally attached in such a manner that the first adhesive layer 12 covers the circuit surface W1. The adhesive sheet 10 may be attached to the ring frame together with a plurality of semiconductor wafers CP. In this case, the ring frame is placed on the first adhesive layer 12 of the adhesive sheet 10 and is gently pushed to fix it. Thereafter, the first adhesive layer 12 exposed inside the ring shape of the ring frame is pushed onto the circuit surface W1 of the semiconductor wafer CP, and a plurality of semiconductor wafers CP are fixed to the adhesive sheet 10 . (First Separation Process) The first transfer process further includes a process of separating the cutting adhesive sheet A from the plurality of semiconductor wafers CP after the above-mentioned bonding process. This process is sometimes called "separation process", and to distinguish it from other separation processes, it is also sometimes called "first separation process". Once the adhesive sheet 10 is attached, the dicing adhesive sheet A is separated from the plurality of semiconductor wafers CP, and the back surface W3 of the plurality of semiconductor wafers CP is exposed. FIG. 4A shows a plurality of semiconductor wafers CP and the adhesive sheet 10 after the adhesive sheet A for dicing is separated. When the adhesive sheet A for dicing is made of expandable microparticles, it is ideal to expand the expandable microparticles to separate the plurality of semiconductor wafers CP and the adhesive sheet A for dicing that are attached to the adhesive sheet 10 . By expanding the expandable fine particles contained in the adhesive sheet A for cutting, unevenness is formed on the adhesive surface of the adhesive layer A2, thereby reducing the contact area between the adhesive surface of the adhesive layer A2 and the semiconductor wafer CP, thereby improving the adhesive force. significantly reduced. As a result, there is no paste residue, etc., the cleanliness of the semiconductor wafer CP is maintained, and the semiconductor wafer CP and the adhesive sheet A for dicing can be easily separated at one time. In the first form, since the first adhesive layer 12 and the second adhesive layer 13 of the adhesive sheet 10 contain energy ray curable adhesive, it is preferable that the expandable microparticles contained in the cutting adhesive sheet A are thermally expandable microparticles. . [Expansion Process] FIG. 4B is a diagram illustrating a process for extending the adhesive sheet 10 holding a plurality of semiconductor wafers CP. This project is sometimes called the "expansion project", and is sometimes called the "first expansion project" to distinguish it from other expansion projects. In this embodiment, the adhesive sheet 10 can be used as an expansion sheet. In the expansion process, the adhesive sheet 10 is elongated to expand the distance between the plurality of semiconductor wafers CP. In addition, during the invisible cutting process, the adhesive sheet 10 is stretched to break the semiconductor wafer at the position of the modified layer, and the semiconductor wafers are individually divided into a plurality of semiconductor wafers CP, and the distance between the plurality of semiconductor wafers CP can be expanded. . The method of elongating the adhesive sheet 10 in the expansion process is not particularly limited. Examples of methods for elongating the adhesive sheet 10 include a method of elongating the adhesive sheet 10 using an annular or circular expander, and a method of grasping and elongating the outer peripheral portion of the adhesive sheet 10 using a gripping member or the like. wait. As the latter method, for example, a method of biaxial stretching using the above-described spacing device or the like can be used. Among these methods, the biaxial stretching method is ideal from the viewpoint that the distance between the semiconductor wafers CP can be further expanded. As shown in FIG. 4B , let the distance between the expanded semiconductor wafers CP be D1. Since the distance D1 is based on the size of the semiconductor wafer CP, it is not particularly limited. The distance D1 is preferably, for example, independently set to 200 μm or more and 6000 μm or less. [Energy ray irradiation process] After the expansion process, a process of irradiating energy rays to the adhesive sheet 10 to harden the first adhesive layer 12 and the second adhesive layer 13 is performed. This project is sometimes called "energy ray irradiation project". When the first adhesive layer 12 and the second adhesive layer 13 are ultraviolet curable, the adhesive sheet 10 is irradiated with ultraviolet rays in the energy ray irradiation process. After the expansion process, the first adhesive layer 12 and the second adhesive layer 13 are hardened, thereby improving the shape retention of the extended adhesive sheet 10 . As a result, the alignment of the plurality of semiconductor wafers CP adhered to the first adhesive layer 12 and the second adhesive layer 13 can be easily maintained. [Second Transfer Process] FIG. 5A is a diagram illustrating a process of transferring a plurality of semiconductor wafers CP to the second adhesive sheet 20 after the expansion process and the energy ray irradiation process. In some cases, this process is called "transfer process". In order to distinguish it from other transfer processes, it may also be called "second transfer process". The second transfer process is the same as the first transfer process and includes a process of bonding the second adhesive sheet 20 to the plurality of semiconductor wafers CP (second bonding process), and a separation process of separating the adhesive sheet 10 ( Second separation project). (Second bonding process) In the second bonding process, the third adhesive layer 22 of the second adhesive sheet 20 is bonded to the back surface W3 of the plurality of semiconductor wafers CP. After the expansion process and the energy ray irradiation process, the plurality of semiconductor wafers CP are attached with their circuit surfaces W1 facing the first adhesive layer 12 . Therefore, the third adhesive layer 22 of the second adhesive sheet 20 is adhered to the back surface W3 opposite to the circuit surface W1. It is ideal to adhere the second adhesive sheet 20 to the back surface W3 of the semiconductor wafer CP while maintaining the distance between the plurality of semiconductor wafers CP after the expansion process. The second adhesive sheet 20 is not particularly limited as long as it can hold a plurality of semiconductor wafers CP. In the first form, the second adhesive sheet 20 having the second base material 21 and the third adhesive layer 22 is used. The second adhesive sheet 20 is the same as the cutting adhesive sheet A and preferably contains expandable microparticles. In this case, it is preferable that at least one of the second base material 21 and the third adhesive layer 22 contains expandable fine particles. By expanding the expandable fine particles contained in the second adhesive sheet 20, unevenness is formed on the adhesive surface of the third adhesive layer 22, thereby reducing the contact area between the adhesive surface of the third adhesive layer 22 and the semiconductor wafer CP. Can significantly reduce adhesion. As a result, when the second adhesive sheet 20 is separated from the semiconductor wafer CP, there is no paste residue on the semiconductor wafer CP, etc., the cleanliness of the semiconductor wafer CP is maintained, and the semiconductor wafer CP can be easily separated from the second adhesive sheet 20 in one go. . The second adhesive sheet 20 may also be attached to the second ring frame together with the plurality of semiconductor wafers CP. In this case, the second ring frame is placed on the third adhesive layer 22 of the second adhesive sheet 20, and is gently pushed and fixed. Thereafter, the third adhesive layer 22 exposed inside the ring shape of the second ring frame is pushed onto the back surface W3 of the semiconductor wafer CP, and a plurality of semiconductor wafers CP are fixed on the second adhesive sheet 20 . (Second Separation Process) The second transfer process is a process of separating the adhesive sheet 10 after attaching the second adhesive sheet 20 to the plurality of semiconductor wafers CP. FIG. 5B shows a plurality of semiconductor wafers CP and the second adhesive sheet 20 after the adhesive sheet 10 is separated. Once the adhesive sheet 10 is separated, the circuit surfaces W1 of the plurality of semiconductor wafers CP will be exposed. Since the first adhesive layer 12 is hardened after the expansion process, the adhesive force of the first adhesive layer 12 is reduced and the adhesive sheet 10 is easily peeled off from the semiconductor wafer CP. It is desirable to maintain the distance D1 between the plurality of semiconductor wafers CP expanded during the expansion process even after peeling off the adhesive sheet 10 . [Third Transfer Process] FIG. 5C is a diagram illustrating a process of transferring a plurality of semiconductor wafers CP adhered to the second adhesive sheet 20 to the third adhesive sheet 30 . This process is sometimes called the "transfer process", and to distinguish it from other transfer processes, it is sometimes called the "third transfer process". The third transfer process is the same as the second transfer process and includes: a process of bonding the third adhesive sheet 30 to the plurality of semiconductor wafers CP (third bonding process), and a process of separating the second adhesive sheet 20 (Third separation project). It is ideal that the plurality of semiconductor wafers CP transferred from the second adhesive sheet 20 to the third adhesive sheet 30 maintain the distance D1. (Third bonding process) In the third bonding process, the fourth adhesive layer 32 of the third adhesive sheet 30 is bonded to the circuit surface W1 of the plurality of semiconductor wafers CP. It is ideal to adhere the third adhesive sheet 30 to the circuit surface W1 of the semiconductor wafer CP while maintaining the distance between the plurality of semiconductor wafers CP after the expansion process. The third adhesive sheet 30 is not particularly limited as long as it can hold a plurality of semiconductor wafers CP. The third adhesive sheet 30 has a third base material 31 and a fourth adhesive layer 32 . The third adhesive sheet 30 may also contain expandable microparticles like the adhesive sheet A for cutting. By expanding the expandable microparticles contained in the third adhesive sheet 30, unevenness is formed on the adhesive surface of the fourth adhesive layer 32, thereby reducing the contact area between the adhesive surface of the fourth adhesive layer 32 and the semiconductor wafer CP. Can significantly reduce adhesion. As a result, when the third adhesive sheet 30 is separated from the sealing body formed in the sealing process described below, there is no paste residue on the semiconductor wafer CP, etc., and the cleanliness of the semiconductor wafer CP can be maintained. The semiconductor wafer CP is separated. The expandable fine particles contained in the third adhesive sheet 30 (third expandable fine particles), the expandable fine particles contained in the cutting adhesive sheet A (first expandable fine particles), and the expandable fine particles contained in the second adhesive sheet 20 (The second expandable fine particles) may be the same as or different from each other. (Third Separation Process) In the third separation process after the third bonding process, the second adhesive sheet 20 is separated from the plurality of semiconductor wafers CP. When at least one of the second base material 21 and the third adhesive layer 22 of the second adhesive sheet 20 contains expandable microparticles, the expandable microparticles are expanded to form unevenness on the surface of the third adhesive layer 22 . The second adhesive sheet 20 is easily peeled off from the semiconductor wafer CP. When the second adhesive sheet 20 and the third adhesive sheet 30 both contain expandable particles that expand by the same external stimulus, when the second adhesive sheet 20 is separated, the fourth adhesive layer 32 of the third adhesive sheet 30 is used. The type and peeling method of the second adhesive sheet 20 and the third adhesive sheet 30 are ideally selected so that the adhesive force of the third adhesive layer 22 of the second adhesive sheet 20 will be greater than that of the third adhesive layer 22 of the second adhesive sheet 20 . In addition, it is preferable that the mechanism for reducing the adhesive force of the second adhesive sheet 20 and the mechanism for reducing the adhesive force of the third adhesive sheet 30 are different. For example, it is ideal to select the base material and adhesive layer so that the adhesive force of the second adhesive sheet 20 is reduced by heat and the adhesive force of the third adhesive sheet 30 is reduced by ultraviolet rays. When it is desired to seal a plurality of semiconductor wafers CP on the third adhesive sheet 30, it is ideal to use an adhesive sheet for sealing process as the third adhesive sheet 30, and it is more ideal to use an adhesive sheet having heat resistance. When a heat-resistant adhesive sheet is used as the third adhesive sheet 30, the third base material 31 and the fourth adhesive layer 32 are each formed of a material that has heat resistance that can withstand the temperature applied in the sealing process. for ideal. Another form of the third adhesive sheet 30 is an adhesive sheet including a third base material, a third adhesive layer, and a fourth adhesive layer. The adhesive sheet contains a third base material between the third adhesive layer and the fourth adhesive layer, and has adhesive layers on both sides of the third base material. The plurality of semiconductor wafers CP transferred from the second adhesive sheet 20 to the third adhesive sheet 30 are adhered with the circuit surface W1 facing the fourth adhesive layer 32 . [Sealing Process] FIG. 5D is a diagram showing a process of sealing a plurality of semiconductor wafers CP using the sealing member 60 . This project is sometimes called a "sealing project". In this embodiment, the sealing process is performed after the plurality of semiconductor wafers CP are transferred to the third adhesive sheet 30 and the second adhesive sheet 20 is separated. In the sealing process, while the circuit surface W1 is protected by the third adhesive sheet 30 , the plurality of semiconductor wafers CP are covered with the sealing member 60 , thereby forming the sealing body 3 . The sealing member 60 is also filled between the plurality of semiconductor wafers CP. Here, since the circuit surface W1 and the circuit W2 are covered by the third adhesive sheet 30 , the circuit surface W1 can be prevented from being covered by the sealing member 60 . Through the sealing process, a plurality of semiconductor wafers CP spaced at predetermined distances are embedded in the sealing body 3 of the sealing member 60 . In the sealing process, it is ideal to cover the plurality of semiconductor wafers CP with the sealing member 60 in a state where the distance D1 is maintained after the expansion process. After the sealing process, a separation process of separating the third adhesive sheet 30 from the sealing body 3 is performed. This project is sometimes called the fourth separation project. Once the third adhesive sheet 30 is separated, the circuit surface W1 of the semiconductor wafer CP and the surface 3A in contact with the third adhesive sheet 30 of the sealing body 3 are exposed. After the expansion process, by repeating the transfer process and the expansion process any number of times, the distance between the semiconductor wafers CP can be set to a desired distance, and the direction of the circuit surface when the semiconductor wafer CP is sealed can be set to a desired direction. [Rewiring Layer Formation Process and Connection Process] After the third adhesive sheet 30 is peeled off from the sealing body 3, the sealing body 3 is sequentially performed: a rewiring layer formation process to form a rewiring layer electrically connected to the semiconductor chip CP. , and the connection process of electrically connecting the rewiring layer and the external terminal electrode. The circuits of the semiconductor chip CP and the external terminal electrodes are electrically connected through the rewiring layer formation process and the connection process with the external terminal electrodes. [Personalization process] The sealing body 3 connected to the external terminal electrode is diced in a semiconductor wafer CP unit. The method of individualizing the sealing body 3 is not particularly limited. By individualizing the sealing body 3, a semiconductor package of a semiconductor wafer CP unit is manufactured. A semiconductor package in which connections are fan-out to external electrodes outside the area of the semiconductor chip CP is manufactured as a fan-out type wafer-level package (FO-WLP). [Mounting Process] In this embodiment, it is preferable that the process of mounting the individualized semiconductor packages on a printed wiring board or the like is also included. The adhesive sheet 10 of this embodiment has a shape that can easily maintain the expanded state after the expansion process. Therefore, it is applicable to applications in which the distance between a plurality of semiconductor wafers needs to be greatly expanded and the expanded state of the thin plate must be maintained as described above. [Modifications of Embodiments] The present invention is not limited to the above-described embodiments. The present invention includes modifications of the above-described embodiments within the scope that achieves the object of the present invention. In the manufacturing method of the FO-WLP of the first aspect described above, a part of the process may be changed or a part of the process may be omitted. The semiconductor wafer or the circuits of the semiconductor wafer are not limited to the arrangement, shape, etc. shown in the figures. The connection structure with the external terminal electrode of the semiconductor package and the like are not limited to the forms described in the aforementioned embodiments. In the above-mentioned embodiment, a form in which a FO-WLP type semiconductor package is manufactured is taken as an example. However, the present invention is also applicable to a form in which other semiconductor packages such as a fan-in type WLP are manufactured. In the foregoing embodiment, a plurality of adherends (semiconductor wafers CP) are adhered to the first adhesive layer 12 as an example. However, the present invention is not limited to such a form. For example, a plurality of adherends (semiconductor wafers CP) may be adhered to the second adhesive layer 13 . The foregoing embodiment is described as an example in which the adherend (semiconductor wafer CP) is adhered to the adhesive layer on the upper surface of the adhesive sheet 10 and energy rays (ultraviolet) are irradiated from the lower surface of the adhesive sheet 10. However, the present invention is not limited to such a form. For example, it may be a form in which the adherend (semiconductor wafer CP) is adhered to the adhesive layer on the lower surface of the adhesive sheet 10 and energy rays (ultraviolet) are irradiated from the upper surface of the adhesive sheet 10 . The adhesive sheet is not limited to the form described in the above embodiment. Another aspect of the adhesive sheet of the present invention is that the adhesive sheet preferably has a coating layer laminated on either the first adhesive layer or the second adhesive layer. The adherend (semiconductor wafer, etc.) is adhered to an adhesive layer on which no coating layer is laminated. In Figure 6 an adhesive sheet 10A with a coating 14 is shown. The material of the coating layer 14 is preferably a composition containing an energy ray curable resin and an inorganic filler. As the energy ray curable resin, for example, the energy ray curable resin (a1) described above can be used. Examples of the inorganic filler include powders of silica, alumina, talc, calcium carbonate, titanium dioxide, red lead, silicon carbide, boron nitride, etc. Any one of these powders Spherical beads, single crystal fibers, glass fibers, etc. The thickness of the coating layer 14 is preferably 0.5 μm or more and 5 μm or less. In the method of manufacturing a semiconductor device according to the above embodiment, after the expansion process, when it is desired to further expand the distance D1 between the plurality of semiconductor wafers CP, the adhesive sheet 10 may be peeled off and the second adhesive sheet 20 may be stretched. project (hereinafter sometimes referred to as the "second expansion project"). When performing the second expansion process, it is ideal to use an expanded sheet as the second adhesive sheet 20 . As this expansion sheet, it is more preferable to use the adhesive sheet (first adhesive sheet) of the aforementioned embodiment. The second expansion process is to further expand the distance between the plurality of semiconductor wafers CP. The method of elongating the second adhesive sheet 20 in the second expansion process is not particularly limited. For example, the second expansion project is also implemented in the same manner as the first expansion project. In addition, let the distance between the semiconductor wafers CP after the second expansion process be D2. The distance D2 is based on the size of the semiconductor wafer CP, so although it is not particularly limited, the distance D2 is larger than the distance D1. The distance D2 is preferably, for example, independently set to 200 μm or more and 6000 μm or less.

3‧‧‧Sealing body 3A‧‧‧Side 10‧‧‧Adhesive sheets 11‧‧‧Substrate 11A‧‧‧First base material surface 11B‧‧‧Second base material surface 12‧‧‧First adhesive layer 13‧‧‧Second adhesive layer 14‧‧‧Coating 20‧‧‧Second adhesive sheet 22‧‧‧The third adhesive layer 30‧‧‧Third adhesive sheet 31‧‧‧Third base material 32‧‧‧The fourth adhesive layer 60‧‧‧Sealing component 100‧‧‧ Expansion device 101A‧‧‧Maintenance means 101B‧‧‧Maintaining means 101C‧‧‧Maintaining means W‧‧‧Semiconductor Wafer W1‧‧‧Circuit surface W2‧‧‧Circuit W3‧‧‧Back A‧‧‧Adhesive sheet for cutting A1‧‧‧Substrate A2‧‧‧Adhesive layer CP‧‧‧semiconductor wafer D1‧‧‧distance

FIG. 1 is a schematic cross-sectional view of an adhesive sheet according to an embodiment of the present invention. FIG. 2 is a plan view illustrating a 2-axis stretching and expansion device. 3A is a cross-sectional view illustrating a first aspect of how to use the adhesive sheet according to the embodiment of the present invention. 3B is a cross-sectional view illustrating a first aspect of how to use the adhesive sheet according to the embodiment of the present invention. 3C is a cross-sectional view illustrating a first aspect of how to use the adhesive sheet according to the embodiment of the present invention. 4A is a cross-sectional view illustrating a first aspect of how to use the adhesive sheet according to the embodiment of the present invention. 4B is a cross-sectional view illustrating a first aspect of how to use the adhesive sheet according to the embodiment of the present invention. 5A is a cross-sectional view illustrating a first aspect of a method of using the adhesive sheet according to the embodiment of the present invention. 5B is a cross-sectional view illustrating a first aspect of the use method of the adhesive sheet according to the embodiment of the present invention. 5C is a cross-sectional view illustrating a first aspect of how to use the adhesive sheet according to the embodiment of the present invention. 5D is a cross-sectional view illustrating a first aspect of a method of using the adhesive sheet according to the embodiment of the present invention. 6 is a schematic cross-sectional view of a modified adhesive sheet according to the embodiment of the present invention.

10‧‧‧Adhesive sheets

11‧‧‧Substrate

11A‧‧‧First base material surface

11B‧‧‧Second base material surface

12‧‧‧First adhesive layer

13‧‧‧Second adhesive layer

W1‧‧‧Circuit surface

W2‧‧‧Circuit

W3‧‧‧Back

CP‧‧‧semiconductor wafer

Claims (14)

An expansion method, characterized by an adhesion process in which the first adhesive layer or the second adhesive layer of an adhesive sheet is adhered to a plurality of adherends, and the adhesive sheet has: containing a first energy A first adhesive layer of linear curable resin, a second adhesive layer containing a second energy ray curable resin, and a base material between the first adhesive layer and the second adhesive layer, the first adhesive layer The agent layer is laminated on the first base material surface of the aforementioned base material, and the aforementioned second adhesive layer is laminated on the second base material surface of the aforementioned base material; the expansion process is to maintain the aforementioned adhesion of the aforementioned plurality of adherends. The thin plate is expanded to expand the distance between the plurality of adherends; and an energy ray irradiation process is performed after the aforementioned expansion process, irradiating energy rays to the aforementioned first adhesive layer and the aforementioned second adhesive layer, so that the aforementioned first adhesive layer is irradiated with energy rays. The adhesive layer and the aforementioned second adhesive layer are hardened. For example, in the expansion method of claim 1, the first energy ray curable resin and the second energy ray curable resin are the same. For example, the expansion method of claim 1 or 2, wherein the composition of the first adhesive layer and the composition of the second adhesive layer are the same. For example, the expansion method of claim 1 or 2, wherein the thickness of the first adhesive layer and the thickness of the second adhesive layer are the same. For example, the expansion method of claim 1 or 2, wherein in the aforesaid sticking process, the aforesaid first adhesive layer is affixed to the aforesaid plurality of adherends, and in the aforesaid energy ray irradiation process, from the aforesaid second The adhesive layer side is irradiated with energy rays to harden the first adhesive layer and the second adhesive layer. For example, in the expansion method of claim 1 or 2, the aforementioned adhered object is a semiconductor wafer. A method for manufacturing a semiconductor device, which includes the expansion method described in any one of items 1 to 6 of the patent application, characterized in that it includes: cutting an adhesive sheet adhered to a cutting adhesive sheet The workpiece is a process of obtaining individual pieces of a plurality of adhered objects. In the above-mentioned sticking process, the surface of the plurality of adhered objects opposite to the surface in contact with the aforementioned cutting adhesive sheet is adhered to the aforementioned adhesive sheet. For the first adhesive layer or the second adhesive layer, after the adhesion process, a process of separating the cutting adhesive sheet and the plurality of adherends is performed. For example, the manufacturing method of a semiconductor device according to claim 7, wherein before separating the adhesive sheet for cutting and the plurality of adherends, Later, the aforementioned expansion project was implemented. For example, the manufacturing method of a semiconductor device in claim 7 or 8, wherein the aforementioned adhesive sheet for cutting contains expandable microparticles, and during the process of separating the aforementioned adhesive sheet for cutting from the aforementioned plurality of adherends, the aforementioned adhesive sheets are The expandable microparticles expand to separate the plurality of adherends attached to the adhesive sheet and the cutting adhesive sheet. For example, the method for manufacturing a semiconductor device in claim 7 or 8 includes: a second transfer process, which, after the aforementioned expansion process, transfers the aforementioned plurality of adherends to a second base material and a second adhesive sheet with a third adhesive layer; and a third transfer process, which transfers the plurality of adherends attached to the second adhesive sheet to a third base material and a fourth adhesive The third adhesive sheet of the third layer contains expandable microparticles. In the second transfer process, between the plurality of adherends and the first adhesive layer or the second adhesive layer The surface opposite to the contact surface is attached to the third adhesive layer of the second adhesive sheet, and the adhesive sheet is separated from the plurality of adherends. In the third transfer process, the plurality of adherends are The surface of the fourth adhesive layer that is opposite to the surface in contact with the third adhesive layer is in contact with the third adhesive sheet, and the aforementioned fourth adhesive layer is separated from the plurality of adherends. Two adhesive sheets. An adhesive sheet, characterized by having: a first adhesive layer containing a first energy ray curable resin; a second adhesive layer containing a second energy ray curable resin; and the aforementioned first adhesive layer and the aforementioned second adhesive layer. The base material between the adhesive layers, the aforementioned first adhesive layer is laminated on the first base material surface of the aforementioned base material, and the aforementioned second adhesive layer is laminated on the second base material surface of the aforementioned base material, is used in An expansion method having the following processes: an adhesion process in which the first adhesive layer or the second adhesive layer of the adhesive sheet adheres to a plurality of objects to be adhered; and an expansion process in which the plurality of objects are maintained. The aforementioned adhesive sheet of the attached body is expanded to expand the distance between the plurality of adhered bodies; and an energy ray irradiation process is performed, which is to irradiate energy rays to the aforementioned first adhesive layer and the aforementioned second adhesive layer after the aforementioned expansion process, The first adhesive layer and the second adhesive layer are hardened. For example, in the adhesive sheet of claim 11, the first energy ray curable resin and the second energy ray curable resin are the same. For example, the adhesive sheet of claim 11 or 12, wherein the composition of the first adhesive layer and the composition of the second adhesive layer are the same. For example, if the adhesive sheet in item 11 or 12 of the patent application is applied for, the aforementioned The thickness of the first adhesive layer is the same as the thickness of the second adhesive layer.