CN111886673A - Method for expanding sheet, method for manufacturing semiconductor device, and adhesive sheet - Google Patents
Method for expanding sheet, method for manufacturing semiconductor device, and adhesive sheet Download PDFInfo
- Publication number
- CN111886673A CN111886673A CN201980017581.0A CN201980017581A CN111886673A CN 111886673 A CN111886673 A CN 111886673A CN 201980017581 A CN201980017581 A CN 201980017581A CN 111886673 A CN111886673 A CN 111886673A
- Authority
- CN
- China
- Prior art keywords
- adhesive layer
- sheet
- adhesive sheet
- pressure
- sensitive adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 230000001070 adhesive effect Effects 0.000 title claims abstract description 243
- 238000000034 method Methods 0.000 title claims abstract description 121
- 239000004065 semiconductor Substances 0.000 title claims description 218
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000012790 adhesive layer Substances 0.000 claims abstract description 137
- 239000000758 substrate Substances 0.000 claims abstract description 73
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- 229920005989 resin Polymers 0.000 claims abstract description 60
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 191
- 239000010410 layer Substances 0.000 claims description 155
- 239000000463 material Substances 0.000 claims description 35
- 238000012546 transfer Methods 0.000 claims description 30
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- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 2
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
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- GFJVXXWOPWLRNU-UHFFFAOYSA-N ethenyl formate Chemical compound C=COC=O GFJVXXWOPWLRNU-UHFFFAOYSA-N 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
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- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- YYOVITCBQDQNHB-UHFFFAOYSA-N methyl prop-2-eneperoxoate Chemical compound C(C=C)(=O)OOC.C(C=C)(=O)OOC YYOVITCBQDQNHB-UHFFFAOYSA-N 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
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- 239000004408 titanium dioxide Substances 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a method for expanding a wafer, which comprises the following steps: a bonding step for bonding a plurality of objects to be bonded to the first adhesive layer (12) or the second adhesive layer (13) of the adhesive sheet (10); a sheet expanding step of expanding the adhesive sheet (10) to expand the interval between the plurality of adherends; and an energy ray irradiation step of irradiating the first adhesive layer (12) and the second adhesive layer (13) with energy rays to cure the first adhesive layer (12) and the second adhesive layer (13), wherein the adhesive sheet (10) has a first adhesive layer (12) containing a first energy ray-curable resin, a second adhesive layer (13) containing a second energy ray-curable resin, and a substrate (11).
Description
Technical Field
The invention relates to a method for expanding a sheet, a method for manufacturing a semiconductor device, and an adhesive sheet.
Background
In recent years, electronic devices have been increasingly downsized, lightened, and highly functional. Semiconductor devices mounted in electronic devices are also required to be miniaturized, thinned, and densified. A semiconductor chip is sometimes mounted on a package having a size close to that of the semiconductor chip. Such packages are sometimes also referred to as Chip Scale Packages (CSPs). One of the CSPs is a Wafer Level Package (WLP). In WLP, external electrodes and the like are formed on a wafer before singulation by dicing, and the wafer is finally diced and singulated. Examples of WLP include a Fan-In (Fan-In) type and a Fan-Out (Fan-Out) type. In fan-out WLP (hereinafter, sometimes referred to simply as "FO-WLP"), a semiconductor chip is covered with a sealing material in a region larger than the chip size to form a semiconductor chip package, and a rewiring layer and external electrodes are formed not only on the circuit surface of the semiconductor chip but also on the surface region of the sealing material.
For example, patent document 1 describes a method for manufacturing a semiconductor package, the method including: a plurality of semiconductor chips formed by singulating a semiconductor wafer are surrounded by a mold member with circuit forming surfaces thereof left, to form an expanded wafer, and a rewiring pattern is extended to a region outside the semiconductor chips to form a semiconductor package. In the manufacturing method described in patent document 1, before surrounding the singulated semiconductor chips with the mold member, the semiconductor chips are alternately attached to the extending sheet, and the extending sheet is extended to increase the distance between the semiconductor chips.
Documents of the prior art
Patent document
Patent document 1: international publication No. 2010/058646
Disclosure of Invention
Problems to be solved by the invention
The above-described process for producing FO-WLP has the following problems: in order to form the above-described rewiring pattern or the like in the region outside the semiconductor chip, it is desirable to stretch the spreading sheet (adhesive sheet) to sufficiently separate the semiconductor chips from each other and to maintain the stretched state of the stretched adhesive sheet. Such a problem is not limited to the semiconductor chip, and is also similar to other adherends.
The present invention aims to provide an expanding method (expanding method) capable of maintaining the shape of an adhesive sheet in an expanded state in an expanding process, and an adhesive sheet used in the expanding method. Another object of the present invention is to provide a method for manufacturing a semiconductor device including the method for expanding a wafer.
Means for solving the problems
According to an embodiment of the present invention, there may be provided a method of expanding a sheet, the method including:
a bonding procedure: a first adhesive layer or a second adhesive layer for bonding a plurality of adherends to an adhesive sheet having a first adhesive layer containing a first energy ray-curable resin, a second adhesive layer containing a second energy ray-curable resin, and a base material between the first adhesive layer and the second adhesive layer;
a sheet expanding process: stretching the adhesive sheet to widen the interval between the plurality of adherends; and
an energy ray irradiation step: the first adhesive layer and the second adhesive layer are cured by irradiating the first adhesive layer and the second adhesive layer with an energy ray.
In the sheet expanding method according to an embodiment of the present invention, it is preferable that the first energy ray-curable resin and the second energy ray-curable resin are the same.
In the sheet expanding method according to an embodiment of the present invention, the composition of the first pressure-sensitive adhesive layer is preferably the same as the composition of the second pressure-sensitive adhesive layer.
In the sheet expanding method according to an embodiment of the present invention, the thickness of the first pressure-sensitive adhesive layer is preferably the same as the thickness of the second pressure-sensitive adhesive layer.
In the sheet expanding method according to an embodiment of the present invention, it is preferable that the plurality of adherends are bonded to the first pressure-sensitive adhesive layer in the bonding step, and energy rays are irradiated from the second pressure-sensitive adhesive layer side in the energy ray irradiation step to cure the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer.
In the method for spreading a sheet according to an embodiment of the present invention, the adherend is preferably a semiconductor chip.
According to an embodiment of the present invention, there is provided a method for manufacturing a semiconductor device including the above-described method for expanding a wafer according to an embodiment of the present invention, the method including: and a step of cutting the work piece bonded to the dicing adhesive sheet to obtain a plurality of singulated adherends, wherein in the bonding step, the first adhesive layer or the second adhesive layer of the adhesive sheet is bonded to one surface of the plurality of adherends opposite to the surface of the plurality of adherends in contact with the dicing adhesive sheet, and after the bonding step, the step of separating the dicing adhesive sheet from the plurality of adherends is performed.
In the method for manufacturing a semiconductor device according to one embodiment of the present invention, it is preferable that the dicing adhesive sheet is separated from the plurality of adherends, and then the expanding step is performed.
In the method for manufacturing a semiconductor device according to one embodiment of the present invention, it is preferable that the dicing adhesive sheet contains expandable fine particles, and in the step of separating the dicing adhesive sheet from the plurality of adherends, the expandable fine particles are expanded to separate the plurality of adherends bonded to the adhesive sheet from the dicing adhesive sheet.
In the method for manufacturing a semiconductor device according to one embodiment of the present invention, it is preferable that the method includes: a second transfer step of transferring the plurality of objects to be adhered to a second adhesive sheet having a second base material and a third adhesive layer after the expanding step; and a third transfer step of transferring the plurality of objects to be adhered to the second pressure-sensitive adhesive sheet to a third pressure-sensitive adhesive sheet having a third substrate and a fourth pressure-sensitive adhesive layer, wherein the third pressure-sensitive adhesive sheet contains expandable fine particles, the second transfer step includes adhering the third pressure-sensitive adhesive layer of the second pressure-sensitive adhesive sheet to one surface of the plurality of objects to be adhered on the opposite side to the surface in contact with the first pressure-sensitive adhesive layer or the second pressure-sensitive adhesive layer, and separating the pressure-sensitive adhesive sheet from the plurality of objects to be adhered, and the third transfer step includes adhering the fourth pressure-sensitive adhesive layer of the third pressure-sensitive adhesive sheet to one surface of the plurality of objects to be adhered on the opposite side to the surface in contact with the third pressure-sensitive adhesive layer, and separating the second pressure-sensitive adhesive sheet from the plurality of objects to be adhered.
According to one embodiment of the present invention, there is provided an adhesive sheet having a first adhesive layer containing a first energy ray-curable resin, a second adhesive layer containing a second energy ray-curable resin, and a substrate between the first adhesive layer and the second adhesive layer, the adhesive sheet being used in a sheet expanding method including the steps of: a bonding step of bonding a plurality of objects to be bonded to the first pressure-sensitive adhesive layer or the second pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet; a sheet expanding step of expanding the adhesive sheet to expand the interval between the plurality of adherends; and an energy ray irradiation step of irradiating the first adhesive layer and the second adhesive layer with an energy ray to cure the first adhesive layer and the second adhesive layer.
In the adhesive sheet according to one embodiment of the present invention, the first energy ray-curable resin and the second energy ray-curable resin are preferably the same.
In the psa sheet according to an embodiment of the present invention, the composition of the first psa layer is preferably the same as the composition of the second psa layer.
In the psa sheet according to an embodiment of the present invention, the thickness of the first psa layer is preferably the same as the thickness of the second psa layer.
According to the present invention, it is possible to provide a sheet expanding method capable of maintaining the shape of a pressure-sensitive adhesive sheet in a state of being expanded in a sheet expanding step, and a pressure-sensitive adhesive sheet used in the sheet expanding method. According to another embodiment of the present invention, a method for manufacturing a semiconductor device including the method for expanding a wafer can be provided.
Drawings
Fig. 1 is a schematic cross-sectional view of an adhesive sheet according to an embodiment of the present invention.
Fig. 2 is a plan view illustrating the biaxial stretching device.
Fig. 3A is a cross-sectional view illustrating a first embodiment of a method of using a pressure-sensitive adhesive sheet according to an embodiment of the present invention.
Fig. 3B is a sectional view illustrating a first embodiment of a method of using the adhesive sheet according to the embodiment of the present invention.
Fig. 3C is a sectional view illustrating a first embodiment of a method for using the adhesive sheet according to the embodiment of the present invention.
Fig. 4A is a sectional view illustrating a first embodiment of a method of using a pressure-sensitive adhesive sheet according to an embodiment of the present invention.
Fig. 4B is a sectional view illustrating a first embodiment of a method of using the adhesive sheet according to the embodiment of the present invention.
Fig. 5A is a sectional view illustrating a first embodiment of a method of using a pressure-sensitive adhesive sheet according to an embodiment of the present invention.
Fig. 5B is a sectional view illustrating a first embodiment of a method of using the adhesive sheet according to the embodiment of the present invention.
Fig. 5C is a sectional view illustrating a first embodiment of a method for using the adhesive sheet according to the embodiment of the present invention.
Fig. 5D is a sectional view illustrating a first embodiment of a method for using the adhesive sheet according to the embodiment of the present invention.
Fig. 6 is a schematic cross-sectional view of a modified adhesive sheet according to an embodiment of the present invention.
Description of the symbols
10. adhesive sheet
11. base material
12. first adhesive layer
13. second adhesive layer
20. second adhesive sheet
21. second substrate
22. third adhesive layer
30. third adhesive sheet
31. third substrate
32. fourth adhesive layer
A. adhesive sheet for dicing
CP. semiconductor chip (adhered material)
Detailed Description
Hereinafter, one embodiment of the present invention will be described.
The adhesive sheet of the present embodiment has a substrate, a first adhesive layer containing a first energy ray-curable resin, and a second adhesive layer containing a second energy ray-curable resin.
[ adhesive sheet ]
Fig. 1 shows a schematic cross-sectional view of an adhesive sheet 10 according to one embodiment of the present embodiment. The adhesive sheet 10 includes a substrate 11, a first adhesive layer 12, and a second adhesive layer 13. The shape of the pressure-sensitive adhesive sheet 10 may be any shape such as a tape shape (long shape) or a label shape (sheet shape). In order to distinguish the pressure-sensitive adhesive sheet of the present embodiment from other pressure-sensitive adhesive sheets, it may be referred to as a first pressure-sensitive adhesive sheet.
(substrate)
The substrate 11 has a first substrate surface 11A and a second substrate surface 11B opposite to the first substrate surface 11A. In the psa sheet 10 of the present embodiment, the first psa layer 12 is provided on the first substrate surface 11A, and the second psa layer 13 is provided on the second substrate surface 11B.
From the viewpoint of easy large stretching, the material of the base material 11 is preferably a thermoplastic elastomer or a rubber-like material, and more preferably a thermoplastic elastomer.
In addition, as a material of the substrate 11, a resin having a low glass transition temperature (Tg) is preferably used from the viewpoint of easy large stretching. The glass transition temperature (Tg) of such a resin is preferably 90 ℃ or lower, more preferably 80 ℃ or lower, and still more preferably 70 ℃ or lower.
As the thermoplastic elastomer, there can be mentioned: urethane elastomers, olefin elastomers, vinyl chloride elastomers, polyester elastomers, styrene elastomers, acrylic elastomers, amide elastomers, and the like. The thermoplastic elastomer may be used alone in 1 kind, or in combination with 2 or more kinds.
As the thermoplastic elastomer, a urethane elastomer is preferably used from the viewpoint of easy large stretching.
The urethane elastomer is generally obtained by reacting a long-chain polyol, a chain extender and a diisocyanate. The urethane elastomer includes a soft segment having a structural unit derived from a long-chain polyol, and a hard segment having a polyurethane structure obtained by reacting a chain extender with a diisocyanate.
If the urethane elastomer is classified according to the type of the long-chain polyol, the urethane elastomer can be classified into a polyester-based polyurethane elastomer, a polyether-based polyurethane elastomer, a polycarbonate-based polyurethane elastomer, and the like. The urethane elastomer may be used alone in 1 kind or in combination of 2 or more kinds. In the present embodiment, the urethane elastomer is preferably a polyether urethane elastomer from the viewpoint of easy large stretching.
Examples of long-chain polyols include: polyester polyols such as lactone polyester polyols and adipate polyester polyols; polyether polyols such as polypropylene (ethylene) polyol and polytetramethylene ether glycol; polycarbonate polyols, and the like. In the present embodiment, the long-chain polyol is preferably an adipate polyester polyol from the viewpoint of easy large stretching.
Examples of diisocyanates include: 2, 4-tolylene diisocyanate, 2, 6-tolylene diisocyanate, 4' -diphenylmethane diisocyanate, hexamethylene diisocyanate, and the like. In the present embodiment, the diisocyanate is preferably hexamethylene diisocyanate in view of easy large stretching.
As the chain extender, there may be mentioned: low molecular weight polyols (e.g., 1, 4-butanediol, and 1, 6-hexanediol), and aromatic diamines. Among them, 1, 6-hexanediol is preferably used from the viewpoint of easy large stretching.
Examples of the olefinic elastomer include elastomers containing at least 1 resin selected from the group consisting of ethylene/α -olefin copolymers, propylene/α -olefin copolymers, butene/α -olefin copolymers, ethylene/propylene/α -olefin copolymers, ethylene/butene/α -olefin copolymers, propylene/butene/α -olefin copolymers, ethylene/propylene/butene/α -olefin copolymers, styrene/isoprene copolymers, and styrene/ethylene/butene copolymers. The olefinic elastomer may be used alone in 1 kind or in combination of 2 or more kinds.
The density of the olefinic elastomer is not particularly limited. For example, the density of the olefinic elastomer is preferably 0.860g/cm3Above and less than 0.905g/cm3More preferably 0.862g/cm3Above and less than 0.900g/cm3Particularly preferably 0.864g/cm3Above and below 0.895g/cm3. When the density of the olefin elastomer satisfies the above range, the substrate 11 is excellent in the concave-convex following property and the like when a semiconductor wafer as an adherend is bonded to an adhesive sheet.
The olefin-based elastomer is preferably such that the mass ratio of the monomers including the olefin-based compound (also referred to as "olefin content" in the present specification) is 50 mass% or more and 100 mass% or less of the total monomers used to form the elastomer.
When the olefin content is too low, the properties of the elastomer including the olefin-derived structural unit are hardly exhibited, and the base material 11 hardly exhibits flexibility and rubber elasticity.
The olefin content is preferably 50 mass% or more, and more preferably 60 mass% or more, from the viewpoint of stably obtaining flexibility and rubber elasticity.
Examples of the styrene-based elastomer include: styrene-conjugated diene copolymers, styrene-olefin copolymers, and the like. Specific examples of the styrene-conjugated diene copolymer include: hydrogenated styrene-conjugated diene copolymers such as styrene-butadiene copolymers, styrene-butadiene-styrene copolymers (SBS), styrene-butadiene-butylene-styrene copolymers, styrene-isoprene-styrene copolymers (SIS), and unhydrogenated styrene-conjugated diene copolymers such as styrene-ethylene-isoprene-styrene copolymers, styrene-ethylene/propylene-styrene copolymers (SEPS, hydrogenated products of styrene-isoprene-styrene copolymers), and styrene-ethylene-butylene-styrene copolymers (SEBS, hydrogenated products of styrene-butadiene copolymers). Further, industrially, as the styrene-based elastomer, there can be mentioned: trade names such as Tufprene (manufactured by Asahi Kasei corporation), Kraton (manufactured by Kraton Polymers Japan), Sumitomo TPE-SB (manufactured by Sumitomo chemical Co., Ltd.), EPFRIEND (manufactured by Dacellosolve Co., Ltd.), Rubberron (manufactured by Mitsubishi chemical Co., Ltd.), Septon (manufactured by Cola Co., Ltd.), and Tuftec (manufactured by Asahi Kasei corporation). The styrenic elastomer may be a hydrogenated product or may be an unhydrogenated product. The styrene-based elastomer may be used alone in 1 kind or in combination of 2 or more kinds.
Examples of the rubber-like material include: natural rubber, synthetic Isoprene Rubber (IR), Butadiene Rubber (BR), styrene-butadiene rubber (SBR), Chloroprene Rubber (CR), nitrile-butadiene rubber (NBR), butyl rubber (IIR), halobutyl rubber, acrylic rubber, urethane rubber, polysulfide rubber, and the like. The rubber-like material may be used alone in 1 of these, or in combination with 2 or more.
The substrate 11 may be a laminated film obtained by laminating a plurality of films made of the above-described materials (for example, a thermoplastic elastomer or a rubber-based material). The substrate 11 may be a laminated film obtained by laminating a film made of the above-described material (for example, a thermoplastic elastomer or a rubber-based material) and another film.
The substrate 11 may contain an additive in a film containing the above-described resin material as a main material.
Examples of additives include: pigments, dyes, flame retardants, plasticizers, antistatic agents, lubricants, fillers, and the like. Examples of pigments include: titanium dioxide, carbon black, and the like. Examples of the filler include organic materials such as melamine resin, inorganic materials such as fumed silica, and metal materials such as nickel particles. The content of such an additive is not particularly limited, and preferably falls within a range in which the base material 11 can exert a desired function.
The substrate 11 may be subjected to surface treatment or primer treatment on one surface or both surfaces thereof as necessary in order to improve adhesion to the pressure-sensitive adhesive layers (the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13) laminated on the first substrate surface 11A and the second substrate surface 11B. Examples of the surface treatment include an oxidation method and a roughening method. As the undercoating treatment, a method of forming an undercoating layer on the surface of the substrate 11 can be mentioned. Examples of the oxidation method include: corona discharge treatment, plasma discharge treatment, chromium oxidation treatment (wet type), flame treatment, hot air treatment, ozone treatment, ultraviolet irradiation treatment, and the like. Examples of the method of forming the concavity and convexity include a sand blast method and a spray coating method.
Since the first adhesive layer 12 and the second adhesive layer 13 contain an energy ray-curable adhesive, the substrate 11 preferably has transparency to an energy ray. When the energy ray-curable adhesive is an ultraviolet ray-curable adhesive, the substrate 11 is preferably transparent to ultraviolet rays. When the energy ray-curable adhesive is an electron beam-curable adhesive, the substrate 11 preferably has electron beam transparency.
The thickness of the substrate 11 is not limited as long as the adhesive sheet 10 can function properly in a desired process. The thickness of the substrate 11 is preferably 20 μm or more, and more preferably 40 μm or more. The thickness of the substrate 11 is preferably 250 μm or less, and more preferably 200 μm or less.
When the thickness of the substrate 11 is measured at a plurality of locations at 2cm intervals in the in-plane direction of the first substrate surface 11A or the second substrate surface 11B, the standard deviation of the thickness of the substrate 11 is preferably 2 μm or less, more preferably 1.5 μm or less, and still more preferably 1 μm or less. By setting the standard deviation to 2 μm or less, the adhesive sheet 10 has a highly accurate thickness, and the adhesive sheet 10 can be uniformly stretched.
The tensile modulus of elasticity of the substrate 11 in the MD direction and the CD direction is 10MPa to 350MPa at 23 ℃, and the 100% stress of the substrate 11 in the MD direction and the CD direction is 3MPa to 20MPa at 23 ℃.
By setting the tensile elastic modulus and the 100% stress in the above ranges, the adhesive sheet 10 can be largely stretched.
The 100% stress of the substrate 11 is a value obtained as follows. A test piece having a size of 150mm (longitudinal direction). times.15 mm (width direction) was cut out from the base material 11. The both ends in the longitudinal direction of the cut test piece were clamped with clamps so that the length between the clamps was 100 mm. After the test piece was clamped by the clamps, the test piece was stretched at a speed of 200 mm/min in the longitudinal direction, and the measurement value of the stretching force was read when the length between the clamps reached 200 mm. The 100% stress of the substrate 11 is a value obtained by dividing the measured value of the tensile force read by the cross-sectional area of the substrate 11. The cross-sectional area of the substrate 11 was calculated by the length in the width direction of 15mm × the thickness of the substrate 11 (test piece). The cutting is performed so that the running direction (MD direction) or the direction perpendicular to the MD direction (CD direction) of the base material 11 during the production thereof coincides with the longitudinal direction of the test piece. In the tensile test, the thickness of the test piece is not particularly limited, and may be the same as the thickness of the substrate to be tested.
The substrate 11 preferably has an elongation at break of 100% or more in the MD direction and the CD direction, respectively, at 23 ℃.
By setting the breaking elongation of the substrate 11 to 100% or more in the MD direction and the CD direction, respectively, the psa sheet 10 can be greatly stretched without breaking.
The tensile modulus of elasticity (MPa) of the substrate and the elongation at break (%) of the substrate can be measured as follows. The substrate was cut into pieces of 15mm by 140mm to obtain test pieces. The test piece was measured for elongation at break and tensile modulus at 23 ℃ in accordance with JIS K7161:2014 and JIS K7127: 1999. Specifically, the test piece was subjected to a tensile test at a speed of 200 mm/min with a distance between chucks set to 100mm using a tensile tester (product name "Autograph AG-IS 500N" manufactured by Shimadzu corporation), and the elongation at break (%) and the tensile elastic modulus (MPa) were measured. The measurement is performed in both the direction of travel (MD) and the direction perpendicular thereto (CD) during the production of the base material.
(adhesive layer)
In the adhesive sheet 10 of the present embodiment, the first adhesive layer 12 and the second adhesive layer 13 contain an energy ray curable adhesive.
The first energy ray-curable resin contained in the first adhesive layer 12 and the second energy ray-curable resin contained in the second adhesive layer 13 are preferably the same resin.
More preferably, the composition of the first adhesive layer 12 is the same as the composition of the second adhesive layer 13.
The thicknesses of the first adhesive layer 12 and the second adhesive layer 13 are not particularly limited.
The thicknesses of the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 are each independently preferably 10 μm or more, and more preferably 20 μm or more, for example. The thicknesses of the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 are each independently preferably 150 μm or less, and more preferably 100 μm or less.
The thickness of the first adhesive layer 12 is preferably the same as the thickness of the second adhesive layer 13.
By making the first energy ray-curable resin and the second energy ray-curable resin the same and making the thickness of the first adhesive layer 12 the same as the thickness of the second adhesive layer 13, the difference in the amount of shrinkage when curing the first adhesive layer 12 and the second adhesive layer 13 can be eliminated or reduced, and the curl of the adhesive sheet 10 can be suppressed.
By making the composition of the first pressure-sensitive adhesive layer 12 the same as the composition of the second pressure-sensitive adhesive layer 13 and making the thickness of the first pressure-sensitive adhesive layer 12 the same as the thickness of the second pressure-sensitive adhesive layer 13, the difference in the amount of shrinkage when curing the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 can be eliminated or reduced, and the curl of the pressure-sensitive adhesive sheet 10 can be further suppressed.
The first energy ray-curable resin contained in the first pressure-sensitive adhesive layer 12 and the second energy ray-curable resin contained in the second pressure-sensitive adhesive layer 13 may be different resins from each other. In this case, the composition of the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 and the thickness of the pressure-sensitive adhesive layer are preferably such that the difference between the shrinkage amount of the first pressure-sensitive adhesive layer 12 during curing and the shrinkage amount of the second pressure-sensitive adhesive layer 13 during curing can be eliminated or reduced. In order to eliminate or reduce the difference in shrinkage, for example, the composition of the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 and the thickness of the pressure-sensitive adhesive layer may be adjusted by appropriately selecting from materials that can be used for the pressure-sensitive adhesive layer, which will be described later.
The first energy ray-curable resin and the second energy ray-curable resin are preferably ultraviolet-curable resins. In this case, the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 can be cured by ultraviolet rays without changing the energy ray irradiated to each pressure-sensitive adhesive layer, and therefore, the manufacturing process can be simplified.
Energy ray-curable resin (a1)
The first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 each independently preferably contain an energy ray-curable resin (a 1). The energy ray-curable resin (a1) has an energy ray-curable double bond in the molecule.
The adhesive layer containing an energy ray-curable resin is cured by irradiation with an energy ray. Therefore, after the psa sheet 10 is stretched, the first psa layer 12 and the second psa layer 13 provided on both sides of the substrate 11 are cured, thereby facilitating the holding of the expanded state of the psa sheet 10.
In addition, the adhesive layer containing the energy ray-curable resin is cured by irradiation with an energy ray, and the adhesive force is reduced. In the case where the adherend is to be separated from the adhesive sheet, the adherend can be easily separated by irradiating the adhesive layer with an energy ray.
The energy ray-curable resin (a1) is preferably a (meth) acrylic resin.
The energy ray-curable resin (a1) is preferably an ultraviolet-curable resin, and more preferably an ultraviolet-curable (meth) acrylic resin.
The energy ray-curable resin (a1) is a resin which is cured by polymerization when irradiated with an energy ray. Examples of the energy ray include ultraviolet rays and electron beams.
Examples of the energy ray-curable resin (a1) include low molecular weight compounds (monofunctional monomers, polyfunctional monomers, monofunctional oligomers, and polyfunctional oligomers) having an energy ray-polymerizable group. Specifically, as the energy ray-curable resin (a1), an acrylate such as trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1, 4-butanediol diacrylate, and 1, 6-hexanediol diacrylate, an acrylate having a cyclic aliphatic skeleton such as dicyclopentadiene dimethoxy diacrylate and isobornyl acrylate, and an acrylate compound such as polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy-modified acrylate, polyether acrylate, and itaconic acid oligomer can be used. The energy ray-curable resin (a1) may be used alone in 1 kind, or in combination with 2 or more kinds.
The molecular weight of the energy ray-curable resin (a1) is usually 100 or more and 30000 or less, and preferably 300 or more and 10000 or less.
(meth) acrylic copolymer (b1)
Each of the first adhesive layer 12 and the second adhesive layer 13 independently preferably further contains a (meth) acrylic copolymer (b 1). The (meth) acrylic copolymer is different from the energy ray-curable resin (a 1).
The (meth) acrylic copolymer (b1) preferably has an energy ray-curable carbon-carbon double bond. That is, in the present embodiment, the first adhesive layer 12 and the second adhesive layer 13 each independently preferably contain the energy ray-curable resin (a1) and the energy ray-curable (meth) acrylic copolymer (b 1).
The energy ray-curable resin (a1) is preferably contained in an amount of 10 parts by mass or more, more preferably 20 parts by mass or more, and still more preferably 25 parts by mass or more per 100 parts by mass of the (meth) acrylic copolymer (b1) in each of the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 independently.
The energy ray-curable resin (a1) is preferably contained in an amount of 80 parts by mass or less, more preferably 70 parts by mass or less, and still more preferably 60 parts by mass or less per 100 parts by mass of the (meth) acrylic copolymer (b1) in each of the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 independently.
The weight average molecular weight (Mw) of the (meth) acrylic copolymer (b1) is preferably 1 ten thousand or more, more preferably 15 ten thousand or more, and further preferably 20 ten thousand or more.
The weight average molecular weight (Mw) of the (meth) acrylic copolymer (b1) is preferably 150 ten thousand or less, and more preferably 100 ten thousand or less.
The weight average molecular weight (Mw) in the present specification is a value measured by gel permeation chromatography (GPC method) in terms of standard polystyrene.
The (meth) acrylic copolymer (b1) is preferably a (meth) acrylate polymer (b2) (hereinafter, sometimes referred to as "energy ray-curable polymer (b 2)") having an energy ray-curable functional group (energy ray-curable group) introduced into a side chain thereof.
The energy ray-curable polymer (b2) is preferably a copolymer obtained by reacting an acrylic copolymer (b21) having a functional group-containing monomer unit with an unsaturated group-containing compound (b22) having a functional group bonded to the functional group. In the present specification, the term (meth) acrylate refers to both acrylate and methacrylate. Other similar terms are also the same.
The acrylic copolymer (b21) preferably contains a structural unit derived from a functional group-containing monomer and a structural unit derived from a (meth) acrylate monomer or a derivative of a (meth) acrylate monomer.
The functional group-containing monomer as a constituent unit of the acrylic copolymer (b21) is preferably a monomer having a polymerizable double bond and a functional group in the molecule. The functional group is preferably at least one functional group selected from a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, an epoxy group, and the like.
Examples of the hydroxyl group-containing monomer include: 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate. The hydroxyl group-containing monomers may be used alone in 1 kind or in combination of 2 or more kinds.
Examples of the carboxyl group-containing monomer include: ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. The carboxyl group-containing monomers may be used alone in 1 kind or in combination of 2 or more kinds.
Examples of the amino group-containing monomer or the substituted amino group-containing monomer include: aminoethyl (meth) acrylate, n-butylaminoethyl (meth) acrylate, and the like. The amino group-containing monomer or substituted amino group-containing monomer may be used alone in 1 kind, or in combination with 2 or more kinds.
As the (meth) acrylate monomer constituting the acrylic copolymer (b21), for example, a monomer having an alicyclic structure in the molecule (alicyclic structure-containing monomer) may be preferably used in addition to the alkyl (meth) acrylate in which the alkyl group has 1 to 20 carbon atoms.
The alkyl (meth) acrylate is preferably an alkyl (meth) acrylate in which the alkyl group has 1 to 18 carbon atoms. The alkyl (meth) acrylate is more preferably, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, or the like. The alkyl (meth) acrylate may be used alone in 1 kind, or in combination of 2 or more kinds.
As the alicyclic structure-containing monomer, for example, cyclohexyl (meth) acrylate, dicyclopentanyl (meth) acrylate, adamantyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentenyl (meth) acrylate, and dicyclopentenyloxyethyl (meth) acrylate can be preferably used. The alicyclic structure-containing monomer may be used alone in 1 kind, or in combination of 2 or more kinds.
The acrylic copolymer (b21) preferably contains the structural unit derived from the functional group-containing monomer at a ratio of 1% by mass or more, more preferably at a ratio of 5% by mass or more, and still more preferably at a ratio of 10% by mass or more.
The acrylic copolymer (b21) preferably contains the structural unit derived from the functional group-containing monomer at a ratio of 35% by mass or less, more preferably at a ratio of 30% by mass or less, and still more preferably at a ratio of 25% by mass or less.
The acrylic copolymer (b21) preferably contains a structural unit derived from a (meth) acrylate monomer or a derivative thereof in a proportion of 50% by mass or more, more preferably 60% by mass or more, and still more preferably 70% by mass or more.
The acrylic copolymer (b21) preferably contains the structural unit derived from the (meth) acrylate monomer or a derivative thereof in an amount of 99% by mass or less, more preferably 95% by mass or less, and still more preferably 90% by mass or less.
The acrylic copolymer (b21) can be obtained by copolymerizing the above-mentioned functional group-containing monomer with a (meth) acrylate monomer or a derivative thereof by a usual method.
The acrylic copolymer (b21) may contain, in addition to the above-mentioned monomers, at least one structural unit selected from the group consisting of dimethylacrylamide, vinyl formate, vinyl acetate, styrene, and the like.
The energy ray-curable polymer (b2) can be obtained by reacting the acrylic copolymer (b21) having the functional group-containing monomer unit with the unsaturated group-containing compound (b22) having a functional group bonded to the functional group thereof.
The functional group of the unsaturated group-containing compound (b22) can be appropriately selected depending on the kind of the functional group-containing monomer unit of the acrylic copolymer (b 21). For example, when the functional group of the acrylic copolymer (b21) is a hydroxyl group, an amino group, or a substituted amino group, the functional group of the unsaturated group-containing compound (b22) is preferably an isocyanate group or an epoxy group, and when the functional group of the acrylic copolymer (b21) is an epoxy group, the functional group of the unsaturated group-containing compound (b22) is preferably an amino group, a carboxyl group, or an aziridine group.
The unsaturated group-containing compound (b22) contains at least 1 energy ray-polymerizable carbon-carbon double bond in 1 molecule, preferably 1 or more and 6 or less, and more preferably 1 or more and 4 or less.
Examples of the unsaturated group-containing compound (b22) include: 2-methacryloyloxyethyl isocyanate (2-isocyanatoethyl methacrylate), m-isopropenyl-alpha, alpha-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1- (bisacryloxymethyl) ethyl isocyanate; an acryloyl monoisocyanate compound obtained by the reaction of a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth) acrylate; an acryloyl group monoisocyanate compound obtained by the reaction of a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth) acrylate; glycidyl (meth) acrylate; (meth) acrylic acid, 2- (1-aziridinyl) ethyl (meth) acrylate, 2-vinyl-2-
Oxazoline, 2-isopropenyl-2-
Oxazoline, and the like.
The unsaturated group-containing compound (b22) is used preferably in a proportion of 50 mol% or more (addition rate) based on the number of moles of the functional group-containing monomer in the acrylic copolymer (b21), more preferably in a proportion of 60 mol% or more, and still more preferably in a proportion of 70 mol% or more.
The unsaturated group-containing compound (b22) is used preferably at a ratio of 95 mol% or less, more preferably at a ratio of 93 mol% or less, and still more preferably at a ratio of 90 mol% or less, based on the number of moles of the functional group-containing monomer in the acrylic copolymer (b 21).
In the reaction of the acrylic copolymer (b21) and the unsaturated group-containing compound (b22), the temperature, pressure, solvent, time, presence or absence of a catalyst, and the kind of a catalyst for the reaction can be appropriately selected depending on the combination of the functional group of the acrylic copolymer (b21) and the functional group of the unsaturated group-containing compound (b 22). As a result, the functional group of the acrylic copolymer (b21) and the functional group of the unsaturated group-containing compound (b22) were reacted with each other, and an unsaturated group was introduced into the side chain of the acrylic copolymer (b21), thereby obtaining an energy ray-curable polymer (b 2).
The weight average molecular weight (Mw) of the energy ray-curable polymer (b2) is preferably 1 ten thousand or more, more preferably 15 ten thousand or more, and further preferably 20 ten thousand or more.
The weight average molecular weight (Mw) of the energy ray-curable polymer (b2) is preferably 150 ten thousand or less, and more preferably 100 ten thousand or less.
Photopolymerization initiator (C)
The first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 each independently preferably contain a photopolymerization initiator (C). By including the photopolymerization initiator (C) in the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13, the polymerization curing time and the light irradiation amount can be reduced.
Specific examples of the photopolymerization initiator (C) include: benzophenone, acetophenone, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoylbenzoic acid methyl ester, benzoin dimethyl ether, 2, 4-diethyl thiazolone, 1-hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzil, bibenzyl, butanedione, beta-chloroanthraquinone, (2,4, 6-trimethylbenzyldiphenyl) phosphine oxide, N, 2-benzothiazolyl N-diethyldithiocarbamate, oligo { 2-hydroxy-2-methyl-1- [4- (1-propenyl) phenyl ] propanone }, 2-dimethoxy-1, 2-diphenylethan-1-one, and the like. These photopolymerization initiators (C) may be used alone in 1 kind, or may be used in combination in 2 or more kinds.
When the energy ray-curable resin (a1) and the (meth) acrylic copolymer (b1) are blended in the adhesive layer, the photopolymerization initiator (C) is preferably used in an amount of 0.1 part by mass or more, more preferably 0.5 part by mass or more, based on 100 parts by mass of the total amount of the energy ray-curable resin (a1) and the (meth) acrylic copolymer (b 1).
When the energy ray-curable resin (a1) and the (meth) acrylic copolymer (b1) are blended in the adhesive layer, the photopolymerization initiator (C) is preferably used in an amount of 10 parts by mass or less, more preferably 6 parts by mass or less, based on 100 parts by mass of the total amount of the energy ray-curable resin (a1) and the (meth) acrylic copolymer (b 1).
The first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 may contain other components in addition to the above components as appropriate. Examples of the other component include a crosslinking agent (E).
Crosslinking agent (E)
As the crosslinking agent (E), a polyfunctional compound having reactivity with a functional group carried by the (meth) acrylic copolymer (b1) or the like can be used. Examples of such polyfunctional compounds include: isocyanate compound, epoxy compound, amine compound, melamine compound, aziridine compound, hydrazine compound, aldehyde compound, and the like,
Oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, and reactive phenol resins.
The blending amount of the crosslinking agent (E) is preferably 0.01 part by mass or more, more preferably 0.03 part by mass or more, and further preferably 0.04 part by mass or more, relative to 100 parts by mass of the (meth) acrylic copolymer (b 1).
The amount of the crosslinking agent (E) blended is preferably 8 parts by mass or less, more preferably 5 parts by mass or less, and still more preferably 3.5 parts by mass or less, per 100 parts by mass of the (meth) acrylic copolymer (b 1).
The recovery rate of the pressure-sensitive adhesive sheet of the present embodiment is preferably 70% or more, more preferably 80% or more, and still more preferably 85% or more. The recovery rate of the pressure-sensitive adhesive sheet of the present embodiment is preferably 100% or less. By setting the recovery rate in the above range, the adhesive sheet can be greatly stretched.
The above restoration ratio is obtained by: when a test piece obtained by cutting the adhesive sheet 10 into 150mm (length direction) × 15mm (width direction) pieces was held between clamps at both ends in the length direction with the clamps such that the length between the clamps was 100mm, then stretched at a speed of 200 mm/min until the length between the clamps reached 200mm, held for 1 minute in a state where the length between the clamps was expanded to 200mm, then restored at a speed of 200 mm/min until the length between the clamps was 100mm, held for 1 minute in a state where the length between the clamps was restored to 100mm, then stretched at a speed of 60 mm/min in the length direction, the measured value of the stretching force showed a length between the clamps at 0.1N/15mm, the length obtained by subtracting the initial length between the clamps from 100mm was L2(mm), and the length obtained by subtracting the initial length between the clamps from 200mm in the expanded state from 100mm was L1(mm), the calculation is performed by the following formula (mathematical formula 2).
Recovery rate (%) { 1- (L2 ÷ L1) } × 100 · (equation 2)
(Release sheet)
In the adhesive sheet 10 of the present embodiment, a release sheet may be laminated on the first adhesive layer 12 and the second adhesive layer 13 in order to protect the first adhesive layer 12 and the second adhesive layer 13 during the time until an object to be adhered (for example, a semiconductor chip or the like) is attached to the first adhesive layer 12 or the second adhesive layer 13. The structure of the release sheet is arbitrary. As an example of the release sheet, a plastic film subjected to a release treatment with a release agent or the like can be exemplified.
Specific examples of the plastic film include a polyester film and a polyolefin film. Examples of the polyester film include: films of polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, or the like. As the polyolefin film, for example: films of polypropylene, polyethylene, or the like.
As the release agent, silicone, fluorine, long-chain alkyl, and the like can be used. Among these release agents, silicones are preferable which are inexpensive and can achieve stable performance.
The thickness of the release sheet is not particularly limited. The thickness of the release sheet is usually 20 μm or more and 250 μm or less.
(method for producing adhesive sheet)
The psa sheet 10 of the present embodiment can be produced in the same manner as conventional psa sheets.
The method for producing the adhesive sheet 10 is not particularly limited as long as the first adhesive layer 12 can be laminated on the first base surface 11A of the base material 11 and the second adhesive layer 13 can be laminated on the second base surface 11B.
As a first example of the method for producing the adhesive sheet 10, the following method can be given. First, a coating liquid (sometimes referred to as a first coating liquid) containing an adhesive composition constituting the first pressure-sensitive adhesive layer 12 and a solvent or a dispersion medium added as necessary, and a coating liquid (sometimes referred to as a second coating liquid) containing an adhesive composition constituting the second pressure-sensitive adhesive layer 13 and a solvent or a dispersion medium added as necessary are prepared. Next, the first coating liquid is applied to the surface of the first substrate surface 11A of the substrate 11 by the coating mechanism to form a coating film. Examples of the coating mechanism include: die coaters, curtain coaters, spray coaters, slit coaters, blade coaters, and the like. Next, the first pressure-sensitive adhesive layer 12 can be formed by drying the coating film. The properties of the coating liquid are not particularly limited as long as the liquid can be applied. The coating liquid may contain a component for forming the pressure-sensitive adhesive layer as a solute or a component for forming the pressure-sensitive adhesive layer as a dispersion medium. The second pressure-sensitive adhesive layer 13 may be formed in the same manner as the first pressure-sensitive adhesive layer 12 by applying a second coating liquid to the second substrate surface 11B of the substrate 11. As a modification of the first example, the second adhesive layer 13 may be formed first, and then the first adhesive layer 12 may be formed.
In addition, as a second example of the method for producing the adhesive sheet, the following method can be given. First, a first coating liquid is applied to the release surface of the release sheet to form a first coating film. Next, the first coating film is dried to form a laminate composed of the first pressure-sensitive adhesive layer 12 and a release sheet. Next, the base material 11 is bonded to the surface of the pressure-sensitive adhesive layer of the laminate opposite to the release sheet side surface. Next, the second coating liquid is applied to the exposed surface of the substrate 11 to form a second coating film. The second coating film is dried to form the second pressure-sensitive adhesive layer 13. This results in a laminate in which the release sheet, the first pressure-sensitive adhesive layer 12, the substrate 11, and the second pressure-sensitive adhesive layer 13 are laminated. A release sheet may be further laminated on the second adhesive layer 13 of the laminate. The release sheet in the laminate may be released as a process material, or may protect the pressure-sensitive adhesive layer until an adherend (e.g., a semiconductor chip, a semiconductor wafer, or the like) is attached to the pressure-sensitive adhesive layer. As a modification of the second example, a method may be employed in which a laminate composed of the release sheet, the second pressure-sensitive adhesive layer 13, and the substrate 11 is first formed, and then the first pressure-sensitive adhesive layer 12 is formed on the laminate.
As a third example of the method for producing the pressure-sensitive adhesive sheet, the following method can be given. A first laminate in which a release sheet (first release sheet), a first pressure-sensitive adhesive layer 12, and a substrate 11 are laminated was formed in the same manner as in the second example. On the other hand, the second coating liquid is applied to the release surface of the other release sheet (second release sheet) to form a second coating film. Next, the second coating film is dried to form a second laminate composed of the second pressure-sensitive adhesive layer 13 and the second release sheet. The second pressure-sensitive adhesive layer 13 of the second laminate is bonded to the exposed surface of the base material 11 of the first laminate, thereby forming a third laminate in which the first release sheet, the first pressure-sensitive adhesive layer 12, the base material 11, the second pressure-sensitive adhesive layer 13, and the second release sheet are laminated. The release sheet in the third laminate may be released as a process material, or may protect the adhesive layer until an adherend (e.g., a semiconductor chip, a semiconductor wafer, or the like) is attached to the adhesive layer. As a modification of the third example, a method may be adopted in which a first laminate composed of a release sheet, the second pressure-sensitive adhesive layer 13, and a base material is formed, a second laminate composed of a release sheet and the first pressure-sensitive adhesive layer 12 is formed, and the first laminate and the second laminate are bonded to each other.
The order of laminating the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 on the substrate 11 is not particularly limited.
When the coating liquid contains the crosslinking agent, the crosslinking reaction between the (meth) acrylic copolymer (b1) and the crosslinking agent in the coating film can be carried out by changing the drying conditions (for example, temperature and time) of the coating film or by separately carrying out a heating treatment, whereby a crosslinked structure can be formed in the pressure-sensitive adhesive layer at a desired density. In order to sufficiently progress the crosslinking reaction, the pressure-sensitive adhesive sheet 10 obtained after laminating the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 on the substrate 11 by the above-described method or the like may be conditioned by leaving it to stand for several days in an environment of, for example, 23 ℃ and a relative humidity of 50%.
The thickness of the pressure-sensitive adhesive sheet 10 of the present embodiment is preferably 30 μm or more, and more preferably 50 μm or more. The thickness of the pressure-sensitive adhesive sheet 10 is preferably 400 μm or less, and more preferably 300 μm or less.
[ method of Using adhesive sheet ]
Since the adhesive sheet 10 of the present embodiment can be bonded to various adherends, the adherend to which the adhesive sheet 10 of the present embodiment can be applied is not particularly limited. For example, the adherend is preferably a semiconductor chip or a semiconductor wafer.
The pressure-sensitive adhesive sheet 10 of the present embodiment can also be suitably used in a sheet expansion method.
Specifically, there is a method of expanding a sheet using the adhesive sheet 10, the method including: a bonding step of bonding a plurality of objects to be bonded to the first adhesive layer 12 or the second adhesive layer 13; a sheet expanding step of expanding the adhesive sheet 10 to expand the interval between the plurality of adherends; and an energy ray irradiation step of irradiating the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 with an energy ray to cure the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13.
In this sheet expanding method, it is preferable that the plurality of adherends are bonded to the first pressure-sensitive adhesive layer 12 in the bonding step, and the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 are cured by irradiating energy rays from the second pressure-sensitive adhesive layer 13 side in the energy ray irradiation step.
The adhesive sheet 10 of the present embodiment can be used for semiconductor processing applications, for example.
Further, the adhesive sheet 10 of the present embodiment can be used to widen the interval between a plurality of semiconductor chips attached to one surface of the substrate 11.
The above-described expanding method using the adhesive sheet 10 can also be applied to a semiconductor processing process. Specifically, when the adherend is a semiconductor chip or a semiconductor wafer, a method of expanding a sheet using the adhesive sheet 10 may be included as one step in the method of manufacturing a semiconductor device.
The expansion interval of the plurality of semiconductor chips depends on the size of the semiconductor chip and is not particularly limited. The adhesive sheet 10 is preferably used to increase the mutual spacing of adjacent semiconductor chips among a plurality of semiconductor chips bonded to one surface of the adhesive sheet 10 to 200 μm or more. The upper limit of the distance between the semiconductor chips is not particularly limited. The upper limit of the mutual spacing of the semiconductor chips may be, for example, 6000 μm.
The adhesive sheet 10 of the present embodiment may be used in a case where the intervals between the plurality of semiconductor chips stacked on one surface of the adhesive sheet 10 are widened by at least biaxial stretching. In this case, the adhesive sheet 10 is stretched by applying tension to 4 directions, i.e., the + X-axis direction, the-X-axis direction, the + Y-axis direction, and the-Y-axis direction, among the X-axis and the Y-axis, which are orthogonal to each other, and more specifically, stretched in the MD direction and the CD direction of the substrate 11.
The biaxial stretching can be performed using a separating device that applies tension in the X-axis direction and the Y-axis direction, for example. Here, the X axis and the Y axis are orthogonal axes, and 1 direction out of the directions parallel to the X axis is a + X axis direction, a direction opposite to the + X axis direction is a-X axis direction, 1 direction out of the directions parallel to the Y axis is a + Y axis direction, and a direction opposite to the + Y axis direction is a-Y axis direction.
The separation device applies tension to the adhesive sheet 10 in 4 directions of the + X axis direction, the-X axis direction, the + Y axis direction, and the-Y axis direction, and preferably includes a plurality of holding mechanisms and a plurality of tension applying mechanisms corresponding to the holding mechanisms in each of the 4 directions. The number of the holding mechanisms and the tension applying mechanisms in each direction depends on the size of the adhesive sheet 10, and may be, for example, 3 or more and 10 or less.
Here, for example, in a group including a plurality of holding mechanisms and a plurality of tension applying mechanisms provided for applying tension in the + X axis direction, it is preferable that each holding mechanism includes a holding member for holding the adhesive sheet 10, and each tension applying mechanism moves the holding member corresponding to the tension applying mechanism in the + X axis direction to apply tension to the adhesive sheet 10. Further, it is preferable that each of the plurality of tension applying mechanisms is provided independently so that the holding mechanism is movable in the + X axis direction. It is preferable that the same configuration is applied to 3 sets including a plurality of holding mechanisms and a plurality of tension applying mechanisms provided for applying tension in each of the-X axis direction, + Y axis direction, and-Y axis direction. Thus, the separating device can apply different tensions to the adhesive sheet 10 for each region in the direction orthogonal to each direction.
In general, when the adhesive sheet 10 is held by 4 holding members from 4 directions of the + X axis direction, the-X axis direction, the + Y axis direction, and the-Y axis direction, and stretched in the 4 directions, tension is applied to the adhesive sheet 10 in the direction in which they are combined (for example, the combined direction of the + X axis direction and the + Y axis direction, the combined direction of the + Y axis direction and the-X axis direction, the combined direction of the-X axis direction and the-Y axis direction, and the combined direction of the-Y axis direction and the + X axis direction), in addition to the 4 directions. As a result, a difference may occur between the interval of the semiconductor chips in the inner region and the interval of the semiconductor chips in the outer region of the adhesive sheet 10.
However, in the above-described separation device, since the plurality of tension applying mechanisms can apply tension to the adhesive sheet 10 independently of each other in each of the + X axis direction, the-X axis direction, the + Y axis direction, and the-Y axis direction, the tension applied to the adhesive sheet 10 can be realized so as to eliminate the difference in the interval between the inside and the outside of the adhesive sheet 10.
As a result, the intervals of the semiconductor chips can be accurately adjusted.
Fig. 2 is a plan view illustrating the sheet expanding device 100 as an example of the biaxially stretchable sheet expanding device (separating device). In fig. 2, the X axis and the Y axis are orthogonal to each other, and the positive direction of the X axis is defined as the + X axis direction, the negative direction of the X axis is defined as the-X axis direction, the positive direction of the Y axis is defined as the + Y axis direction, and the negative direction of the Y axis is defined as the-Y axis direction. The adhesive sheet 10 may be provided to the sheet expanding device 100 such that each side is parallel to the X axis or the Y axis. As a result, the MD direction of the substrate 11 in the adhesive sheet 10 is parallel to the X axis or the Y axis. In fig. 2, the adherend (semiconductor chip) is omitted.
As shown in fig. 2, the sheet expanding device 100 includes 5 holding mechanisms 101 (20 holding mechanisms 101 in total) in the + X-axis direction, the-X-axis direction, the + Y-axis direction, and the-Y-axis direction, respectively. Of the 5 holding mechanisms 101 in each direction, the holding mechanisms 101A are located at both ends, the holding mechanism 101C is located at the center, and the holding mechanism 101B is located between the holding mechanisms 101A and 101C. Each side of the adhesive sheet 10 can be held by these holding mechanisms 101.
The sheet expanding device 100 includes a plurality of tension applying mechanisms, not shown, corresponding to the respective holding mechanisms 101. By driving the tension applying mechanism, the holding mechanisms 101 can be moved independently of each other. For the 5 holding mechanisms 101 that hold one side of the adhesive sheet 10 in the + X axis direction, for example, it is possible to move in the + X axis direction at a first stretching speed for a given time. Meanwhile, in these 5 holding mechanisms 101, the holding mechanism 101A and the holding mechanism 101B may be moved in a direction away from the holding mechanism 101C (i.e., + Y-axis direction or-Y-axis direction). At this time, the holding mechanism 101A may be moved at a speed slower than the first stretching speed (e.g., 2/3 speed of the first stretching speed), and the holding mechanism 101B may be moved at a speed slower than the first stretching speed (e.g., 1/3 speed of the first stretching speed). The holding mechanism 101C may not move in the + Y axis direction and the-Y axis direction. The holding mechanism 101 located on the 3 directions other than the + X axis direction of the adhesive sheet 10 may be moved in each direction and the holding mechanisms 101A and 101B may be moved in a direction away from the holding mechanism 101C in the same manner as the + X axis direction.
The separation device preferably further includes a measuring unit for measuring the distance between the semiconductor chips. Here, the tension applying mechanism is preferably provided so as to be able to individually move the plurality of holding members based on the measurement result of the measuring mechanism. By providing the separation device with the measurement means, the distance can be further adjusted based on the measurement result of the semiconductor chip distance obtained by the measurement means, and as a result, the distance of the semiconductor chips can be more accurately adjusted.
In the separation device, examples of the holding mechanism include a chuck mechanism and a decompression mechanism. Examples of the chuck mechanism include a mechanical chuck and a chuck column (chuck cylinder). Examples of the pressure reducing mechanism include a pressure reducing pump and a vacuum ejector. In the above-described separation device, the holding means may be configured to support the adhesive sheet 10 by an adhesive, a magnetic force, or the like. As the holding member in the chuck mechanism, for example, a holding member having a configuration including a lower support member that supports the adhesive sheet 10 from below, a driving device that is supported by the lower support member, and an upper support member that is supported by an output shaft of the driving device and can press the adhesive sheet 10 from above by driving of the driving device can be used. Examples of the driving device include an electric device and an actuator. Examples of the electric device include: rotary motors, linear motors, single-axis robots, articulated robots, and the like. Examples of actuators include: air cylinders, hydraulic cylinders, rodless cylinders, rotary cylinders, and the like.
In addition, in the above-described defibering device, the tension applying mechanism may have a driving device, and the holding member may be moved by the driving device. As the driving device provided in the tension applying mechanism, the same driving device as the driving device provided in the holding member can be used. For example, the tension applying mechanism may be configured to include a linear motor as a driving device and an output shaft interposed between the linear motor and the holding member, and the driven linear motor may move the holding member via the output shaft.
In the case where the interval of the semiconductor chips is enlarged using the adhesive sheet 10 of the present embodiment, the interval may be enlarged from a state where the semiconductor chips are in contact with each other, or from a state where the interval of the semiconductor chips is not substantially enlarged, or further enlarged from a state where the interval of the semiconductor chips has been enlarged to a given interval.
In the case where the intervals between the semiconductor chips are widened from a state where the semiconductor chips are in contact with each other or from a state where the intervals between the semiconductor chips are not substantially widened, for example, a plurality of semiconductor chips can be obtained by dividing a semiconductor wafer on a dicing sheet, and then the plurality of semiconductor chips are transferred from the dicing sheet to the adhesive sheet 10 of the present embodiment, followed by widening the intervals between the semiconductor chips. Alternatively, the adhesive sheet 10 of the present embodiment may be formed by dividing a semiconductor wafer into a plurality of semiconductor chips and then expanding the intervals between the semiconductor chips.
As a case where the interval between the semiconductor chips is further expanded from the state where the interval between the semiconductor chips has been expanded to the given interval, after the interval between the semiconductor chips is expanded to the given interval using another adhesive sheet, preferably using the adhesive sheet 10 of the present embodiment, the semiconductor chips may be transferred from the adhesive sheet 10 to another adhesive sheet 10 of the present embodiment, followed by stretching the adhesive sheet 10 of the present embodiment, thereby further expanding the interval between the semiconductor chips. Such transfer of the semiconductor chips and stretching of the adhesive sheet may be repeated a plurality of times until the intervals between the semiconductor chips reach a desired distance.
[ method for manufacturing semiconductor device ]
The method for manufacturing a semiconductor device according to the present embodiment preferably includes a method of expanding a pressure-sensitive adhesive sheet 10 according to the present embodiment.
The method for manufacturing a semiconductor device according to the present embodiment preferably includes a step (dicing step) of dicing a work (semiconductor wafer) bonded to the dicing adhesive sheet to obtain a plurality of singulated adherends (semiconductor chips). The pressure-sensitive adhesive sheet for dicing preferably contains expandable fine particles.
In the bonding step of the method for manufacturing a semiconductor device according to the present embodiment, the first pressure-sensitive adhesive layer 12 or the second pressure-sensitive adhesive layer 13 of the pressure-sensitive adhesive sheet 10 is preferably bonded to the surface of the plurality of adherends (semiconductor chips) opposite to the surface thereof in contact with the dicing pressure-sensitive adhesive sheet.
In the method for manufacturing a semiconductor device according to the present embodiment, it is preferable that the step of separating the dicing adhesive sheet from the plurality of adherends (semiconductor chips) is performed after the bonding step. When the dicing pressure-sensitive adhesive sheet contains the expandable fine particles, the expandable fine particles are preferably expanded to separate the plurality of adherends (semiconductor chips) bonded to the pressure-sensitive adhesive sheet 10 from the dicing pressure-sensitive adhesive sheet.
In the method for manufacturing a semiconductor device according to the present embodiment, it is preferable that the dicing adhesive sheet is separated from the plurality of adherends (semiconductor chips), and then the expanding step is performed.
The method for manufacturing a semiconductor device according to the present embodiment preferably includes a step (transfer step) of transferring a plurality of objects to be adhered (semiconductor chips) to a second adhesive sheet having a second base material and a third adhesive layer. The second adhesive sheet preferably contains expandable fine particles.
In the method for manufacturing a semiconductor device according to the present embodiment, it is preferable that the third adhesive layer of the second adhesive sheet is bonded to the surface of the plurality of objects to be adhered (semiconductor chips) opposite to the surface in contact with the first adhesive layer 12 or the second adhesive layer 13, and the plurality of objects to be adhered (semiconductor chips) bonded to the second adhesive sheet are separated from the adhesive sheet 10. When the second adhesive sheet contains the expandable fine particles, it is preferable that the expandable fine particles are expanded to separate the plurality of adherends (semiconductor chips) from the second adhesive sheet.
The adhesive sheet 10 of the present embodiment is preferably used for applications requiring relatively large spacing between semiconductor chips, and an example of such applications is a method for manufacturing a fan-out semiconductor wafer level package (FO-WLP). The first embodiment will be described below as an example of such a method for producing FO-WLP.
(first embodiment)
A first embodiment of a method for producing FO-WLP using the adhesive sheet 10 of the present embodiment will be described below.
Fig. 3A shows a semiconductor wafer W as a workpiece bonded to a dicing pressure-sensitive adhesive sheet a as a dicing sheet.
The semiconductor wafer W has a circuit surface W1, and a circuit W2 is formed on the circuit surface W1. The dicing adhesive sheet a is bonded to the back surface W3 of the semiconductor wafer W on the side opposite to the circuit surface W1. The psa sheet a for dicing had a substrate a1 and a psa layer a 2. The adhesive layer a2 was laminated to the substrate a 1.
[ cutting Process ]
Fig. 3B shows a state in which the plurality of semiconductor chips CP formed after dicing the semiconductor wafer W are held in the dicing adhesive sheet a.
The semiconductor wafer W held by the dicing adhesive sheet a is singulated by dicing to form a plurality of semiconductor chips CP (sometimes referred to as a dicing step). The semiconductor chip CP has a circuit surface W1 and a back surface W3 opposite to the circuit surface W1. A circuit W2 is formed on the circuit surface W1.
The cutting may be performed by a cutting mechanism such as a microtome (dicing saw).
The semiconductor wafer W may be diced by irradiating the semiconductor wafer W with laser light instead of using the cutting mechanism. For example, the semiconductor wafer W can be completely cut by laser irradiation to be singulated into a plurality of semiconductor chips.
Alternatively, after the modified layer is formed inside the semiconductor wafer W by laser irradiation, the adhesive sheet may be stretched in a sheet expanding step described later to break the semiconductor wafer at the modified layer, thereby singulating the semiconductor chips CP. Such a method of singulating into semiconductor chips is sometimes referred to as stealth dicing. In the case of stealth dicing, the laser light is irradiated in the infrared range so as to be focused on a focal point set inside the semiconductor wafer W, for example. In these methods, laser irradiation may be performed from any side of the semiconductor wafer W.
After dicing, the plurality of semiconductor chips CP is preferably transferred to the expansion sheet at once.
The pressure-sensitive adhesive sheet a for dicing preferably contains expandable fine particles. In this case, at least one of the substrate a1 and the adhesive layer a2 preferably contains expandable fine particles. The expandable fine particles are not particularly limited as long as they can expand themselves by an external stimulus to form irregularities on the surface of the pressure-sensitive adhesive layer and reduce the adhesive strength with the adherend (semiconductor chip). Examples of the expandable fine particles include: thermal expandable fine particles that expand by heating, energy ray expandable fine particles that expand by irradiation with energy rays, and the like. From the viewpoint of versatility and workability, the expandable fine particles are preferably thermally expandable fine particles.
By forming irregularities on the adhesive surface of the adhesive layer a2 by swelling the swellable particles contained in the dicing adhesive sheet a, the contact area between the adhesive surface of the adhesive layer a2 and the semiconductor chip CP can be reduced, and the adhesive strength can be significantly reduced. As a result, when the dicing adhesive sheet a is separated from the semiconductor chip CP, the semiconductor chip CP can be easily separated from the dicing adhesive sheet a at one time without leaving adhesive residue or the like on the semiconductor chip CP and with the cleanliness of the semiconductor chip CP maintained.
[ first transfer Process ]
Fig. 3C is a diagram illustrating a process of transferring the plurality of semiconductor chips CP to the adhesive sheet 10 of the present embodiment after the dicing process. This step may be referred to as a "transfer step", and may be referred to as a "first transfer step" for the purpose of distinguishing it from other transfer steps.
(first bonding step)
The first transfer step includes a step of bonding the first pressure-sensitive adhesive layer 12 or the second pressure-sensitive adhesive layer 13 of the pressure-sensitive adhesive sheet 10 to the surface (circuit surface W1) of the plurality of semiconductor chips CP opposite to the surface (back surface W3) of the dicing pressure-sensitive adhesive sheet a. This step may be referred to as a "bonding step", and may be referred to as a "first bonding step" for the purpose of distinguishing from other bonding steps.
In the first embodiment, the first adhesive layer 12 is bonded to the circuit surface W1 of the plurality of semiconductor chips CP. The pressure-sensitive adhesive sheet 10 is preferably bonded so that the first pressure-sensitive adhesive layer 12 covers the circuit surface W1.
The adhesive sheet 10 may be attached to the ring frame together with the plurality of semiconductor chips CP. In this case, the ring frame is placed on the first pressure-sensitive adhesive layer 12 of the pressure-sensitive adhesive sheet 10, and is lightly pressed and fixed. Then, the first adhesive layer 12 exposed inside the ring shape of the ring frame is pressed against the circuit surface W1 of the semiconductor chips CP, and the plurality of semiconductor chips CP are fixed to the adhesive sheet 10.
(first separation Process)
The first transfer step further includes a step of separating the dicing adhesive sheet a from the plurality of semiconductor chips CP after the bonding step. This step may be referred to as a "separation step", and may be referred to as a "first separation step" for the purpose of distinguishing it from other separation steps.
After the adhesive sheet 10 is bonded, when the dicing adhesive sheet a is separated from the plurality of semiconductor chips CP, the back surfaces W3 of the plurality of semiconductor chips CP are exposed.
Fig. 4A shows a plurality of semiconductor chips CP and the adhesive sheet 10 after the dicing adhesive sheet a is separated.
When the dicing adhesive sheet a contains the expandable fine particles, the expandable fine particles are preferably expanded to separate the plurality of semiconductor chips CP attached to the adhesive sheet 10 from the dicing adhesive sheet a. By swelling the swellable fine particles contained in the dicing psa sheet a, irregularities can be formed on the adhesive surface of the psa layer a2, thereby reducing the contact area between the adhesive surface of the psa layer a2 and the semiconductor chip CP and significantly reducing the adhesive strength. As a result, the semiconductor chip CP and the dicing adhesive sheet a can be easily separated at one time without adhesive residue or the like while maintaining the cleanness of the semiconductor chip CP.
In the first embodiment, since the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 of the pressure-sensitive adhesive sheet 10 contain an energy ray-curable pressure-sensitive adhesive, the expandable fine particles contained in the dicing pressure-sensitive adhesive sheet a are preferably thermally expandable fine particles.
[ sheet expansion Process ]
Fig. 4B is a diagram illustrating a step of stretching the adhesive sheet 10 holding the plurality of semiconductor chips CP. This step may be referred to as a "sheet expanding step", and may be referred to as a "first sheet expanding step" for the sake of distinction from other sheet expanding steps.
In the present embodiment, the adhesive sheet 10 is used as an extension sheet. In the expanding step, the adhesive sheet 10 is stretched to expand the intervals between the plurality of semiconductor chips CP. When the stealth dicing is performed in the dicing step, the adhesive sheet 10 is stretched, whereby the semiconductor wafer can be broken at the position of the modified layer and singulated into a plurality of semiconductor chips CP, and the intervals between the plurality of semiconductor chips CP can be enlarged.
The method of stretching the adhesive sheet 10 in the sheet expanding step is not particularly limited. Examples of the method for stretching the adhesive sheet 10 include: a method of stretching the adhesive sheet 10 by pressing a ring-shaped or circular expander, a method of stretching the adhesive sheet 10 by sandwiching the outer periphery of the adhesive sheet 10 with a holding member or the like, and the like. The latter method may be, for example, a method of performing biaxial stretching using the above-mentioned spacer or the like. Among these methods, a method of performing biaxial stretching is preferable from the viewpoint of being able to further enlarge the interval between the semiconductor chips CP.
As shown in fig. 4B, the distance between the spread semiconductor chips CP is D1. The distance D1 is not particularly limited since it depends on the size of the semiconductor chip CP. The distances D1 are preferably 200 μm to 6000 μm, for example, independently of each other.
[ energy ray irradiation Process ]
After the sheet expanding step, the adhesive sheet 10 is irradiated with an energy ray to cure the first adhesive layer 12 and the second adhesive layer 13. This step is sometimes referred to as an "energy ray irradiation step".
When the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 are ultraviolet-curable, the pressure-sensitive adhesive sheet 10 is irradiated with ultraviolet rays in the energy ray irradiation step. By curing the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 after the sheet expansion step, the shape retention of the stretched pressure-sensitive adhesive sheet 10 is improved. As a result, the alignment of the plurality of semiconductor chips CP attached to the first adhesive layer 12 and the second adhesive layer 13 is easily maintained.
[ second transfer Process ]
Fig. 5A is a view illustrating a step of transferring the plurality of semiconductor chips CP to the second adhesive sheet 20 after the sheet expanding step and the energy ray irradiation step. This step may be referred to as a "transfer step", and may be referred to as a "second transfer step" for the purpose of distinguishing it from other transfer steps.
The second transfer step includes a step of bonding the second adhesive sheet 20 to the plurality of semiconductor chips CP (second peripheral bonding step) and a separation step of separating the adhesive sheet 10 (second separation step), as in the first transfer step.
(second bonding step)
In the second bonding step, the third pressure-sensitive adhesive layer 22 of the second pressure-sensitive adhesive sheet 20 is bonded to the back surfaces W3 of the plurality of semiconductor chips CP.
After the spreading step and the energy ray irradiation step, the circuit surfaces W1 of the plurality of semiconductor chips CP are bonded to the first pressure-sensitive adhesive layer 12. Therefore, the third pressure-sensitive adhesive layer 22 of the second pressure-sensitive adhesive sheet 20 is bonded to the back surface W3 on the side opposite to the circuit surface W1. The second adhesive sheet 20 is preferably bonded to the back surface W3 of the semiconductor chip CP while maintaining the spacing between the plurality of semiconductor chips CP after the spreading step.
The second adhesive sheet 20 is not particularly limited as long as it can hold a plurality of semiconductor chips CP. In the first embodiment, a second adhesive sheet 20 having a second substrate 21 and a third adhesive layer 22 is used.
The second psa sheet 20 preferably contains swellable particles, as in the case of the dicing psa sheet a. In this case, at least one of the second base material 21 and the third pressure-sensitive adhesive layer 22 preferably contains expandable fine particles.
By swelling the swellable particles contained in the second psa sheet 20, irregularities are formed on the adhesive surface of the third psa layer 22, which reduces the contact area between the adhesive surface of the third psa layer 22 and the semiconductor chip CP and significantly reduces the adhesive strength. As a result, when the second adhesive sheet 20 is separated from the semiconductor chip CP, the semiconductor chip CP can be easily separated from the second adhesive sheet 20 at one time without leaving adhesive residue or the like on the semiconductor chip CP and with the cleanliness of the semiconductor chip CP maintained.
The second adhesive sheet 20 may be attached to the second ring frame together with the plurality of semiconductor chips CP. In this case, the second ring frame is placed on the third pressure-sensitive adhesive layer 22 of the second pressure-sensitive adhesive sheet 20, and is lightly pressed and fixed. Then, the third adhesive layer 22 exposed to the inside of the loop shape of the second loop-shaped frame is pressed against the back surface W3 of the semiconductor chip CP, and the plurality of semiconductor chips CP are fixed to the second adhesive sheet 20.
(second separation step)
The second transfer step is a step of separating the adhesive sheet 10 after the second adhesive sheet 20 is bonded to the plurality of semiconductor chips CP.
Fig. 5B shows the plurality of semiconductor chips CP and the second adhesive sheet 20 after the adhesive sheet 10 is separated.
When the adhesive sheet 10 is separated, the circuit surface W1 of the plurality of semiconductor chips CP is exposed. After the sheet expanding step, the first pressure-sensitive adhesive layer 12 is cured, so that the adhesive strength of the first pressure-sensitive adhesive layer 12 is reduced, and the pressure-sensitive adhesive sheet 10 is easily peeled from the semiconductor chip CP.
Preferably, the distance D1 between the plurality of semiconductor chips CP expanded in the expanding step is maintained after the adhesive sheet 10 is peeled.
[ third transfer Process ]
Fig. 5C is a view illustrating a process of transferring the plurality of semiconductor chips CP attached to the second adhesive sheet 20 to the third adhesive sheet 30. This step may be referred to as a "transfer step", and may be referred to as a "third transfer step" for the purpose of distinguishing it from other transfer steps.
The third transfer step includes a step of bonding the third adhesive sheet 30 to the plurality of semiconductor chips CP (third bonding step) and a step of separating the second adhesive sheet 20 (third separation step) in the same manner as the second transfer step.
The plurality of semiconductor chips CP transferred from the second adhesive sheet 20 to the third adhesive sheet 30 are preferably maintained at a distance D1.
(third bonding step)
In the third bonding step, the fourth pressure-sensitive adhesive layer 32 of the third pressure-sensitive adhesive sheet 30 is bonded to the circuit surface W1 of the plurality of semiconductor chips CP.
The third adhesive sheet 30 is preferably bonded to the circuit surface W1 of the semiconductor chips CP while maintaining the intervals between the plurality of semiconductor chips CP after the spreading step.
The third adhesive sheet 30 is not particularly limited as long as it can hold a plurality of semiconductor chips CP. The third adhesive sheet 30 has a third substrate 31 and a fourth adhesive layer 32.
The third psa sheet 30 may contain swellable particles, as in the case of the dicing psa sheet a.
By forming irregularities on the adhesive surface of the fourth adhesive layer 32 by swelling the swellable particles contained in the third adhesive sheet 30, the contact area between the adhesive surface of the fourth adhesive layer 32 and the semiconductor chip CP can be reduced, and the adhesive strength can be significantly reduced. As a result, when the third adhesive sheet 30 is separated from the sealing body formed in the sealing step described later, the semiconductor chip CP can be separated from the third adhesive sheet 30 while maintaining the cleanness of the semiconductor chip CP without generating adhesive residue or the like on the semiconductor chip CP.
The swellable particles (third swellable particles) contained in the third psa sheet 30, the swellable particles (first swellable particles) contained in the dicing psa sheet a, and the swellable particles (second swellable particles) contained in the second psa sheet 20 are optionally identical or different from each other.
(third separation Process)
In the third separation step after the third bonding step, the second adhesive sheet 20 is separated from the plurality of semiconductor chips CP. When at least one of the second base material 21 and the third pressure-sensitive adhesive layer 22 of the second pressure-sensitive adhesive sheet 20 contains the expandable fine particles, the surface of the third pressure-sensitive adhesive layer 22 can be formed with irregularities by expanding the expandable fine particles, and the second pressure-sensitive adhesive sheet 20 can be easily peeled from the semiconductor chip CP.
In the case where both the second psa sheet 20 and the third psa sheet 30 include expandable particles that expand by the same external stimulus, it is preferable to select the type and the peeling method of the second psa sheet 20 and the third psa sheet 30 such that the adhesive force of the fourth psa layer 32 of the third psa sheet 30 is greater than the adhesive force of the third psa layer 22 of the second psa sheet 20 when separating the second psa sheet 20.
In addition, the mechanism of reducing the adhesive force of the second adhesive sheet 20 and the mechanism of reducing the adhesive force of the third adhesive sheet 30 are preferably different. For example, the substrate and the adhesive layer are preferably selected so that the adhesive force of the second adhesive sheet 20 is reduced by heat and the adhesive force of the third adhesive sheet 30 is reduced by ultraviolet rays.
When it is desired to seal the plurality of semiconductor chips CP on the third adhesive sheet 30, an adhesive sheet for a sealing process is preferably used as the third adhesive sheet 30, and an adhesive sheet having heat resistance is more preferably used.
In the case of using a heat-resistant adhesive sheet as the third adhesive sheet 30, each of the third substrate 31 and the fourth adhesive layer 32 is preferably formed of a material having heat resistance capable of withstanding the temperature applied in the sealing step. As another embodiment of the third psa sheet 30, a psa sheet comprising a third substrate, a third psa layer and a fourth psa layer may be mentioned. The adhesive sheet comprises a third substrate between a third adhesive layer and a fourth adhesive layer, and has adhesive layers on both surfaces of the third substrate.
The plurality of semiconductor chips CP transferred from the second psa sheet 20 to the third psa sheet 30 are bonded with the circuit surface W1 facing the fourth psa layer 32.
[ sealing Process ]
Fig. 5D is a diagram illustrating a process of sealing the plurality of semiconductor chips CP with the sealing member 60. This step is sometimes referred to as a "sealing step".
In the present embodiment, the sealing process is performed after the plurality of semiconductor chips CP are transferred to the third adhesive sheet 30 and the second adhesive sheet 20 is separated.
In the sealing step, the sealing body 3 is formed by covering the plurality of semiconductor chips CP with the sealing member 60 in a state where the circuit surface W1 is protected by the third adhesive sheet 30. The sealing member 60 is also filled between the plurality of semiconductor chips CP. Here, since the circuit surface W1 and the circuit W2 are covered with the third adhesive sheet 30, the circuit surface W1 can be prevented from being covered with the sealing member 60.
By the sealing step, the sealing body 3 in which the plurality of semiconductor chips CP spaced apart by a predetermined distance are embedded in the sealing member 60 can be obtained. In the sealing step, the plurality of semiconductor chips CP are preferably covered with the sealing member 60 while maintaining the distance D1 after the expanding step.
After the sealing step, a separation step of separating the third adhesive sheet 30 from the sealing body 3 is performed. This step is sometimes referred to as a fourth separation step.
When the third adhesive sheet 30 is separated, the circuit surface W1 of the semiconductor chip CP and the surface 3A of the sealing body 3 in contact with the third adhesive sheet 30 are exposed.
After the expanding step, the transfer step and the expanding step are repeated an arbitrary number of times, whereby the distance between the semiconductor chips CP can be set to a desired distance and the circuit surface when the semiconductor chips CP are sealed can be set to a desired orientation.
[ Re-wiring layer formation step and connection step ]
After the third adhesive sheet 30 is peeled off from the sealing body 3, a rewiring layer forming step of forming a rewiring layer electrically connected to the semiconductor chip CP and a connecting step of electrically connecting the rewiring layer to the external terminal electrode are sequentially performed on the sealing body 3. The electrical circuit of the semiconductor chip CP can be electrically connected to the external terminal electrode by the rewiring layer forming step and the connection step to the external terminal electrode.
[ singulation step ]
The sealing body 3 to which the external terminal electrodes are connected is singulated into units of semiconductor chips C. The method for making the sealing body 3 into a single piece is not particularly limited. By singulating the sealing body 3, a semiconductor package of the semiconductor chip CP unit can be manufactured. The semiconductor package to which the external electrodes outside the area of the fan-out to the semiconductor chip CP are connected is manufactured as a fan-out wafer level package (FO-WLP).
[ mounting Process ]
In the present embodiment, the step of mounting the singulated semiconductor package on a printed wiring board or the like is preferably included.
The pressure-sensitive adhesive sheet 10 of the present embodiment is easy to maintain its shape in a state of being expanded in the sheet expansion step. Therefore, the present invention can be suitably used for applications requiring a large interval between the plurality of semiconductor chips and maintaining the stretched state of the sheet as described above.
[ variation of embodiment ]
The present invention is not limited to the above embodiments. The present invention includes embodiments obtained by modifying the above-described embodiments, and the like, within a range in which the object of the present invention can be achieved.
The method for producing FO-WLP according to the first embodiment may be modified in part or omitted in part.
The arrangement, shape, and the like of the circuits in the semiconductor wafer and the semiconductor chip are not limited to those shown in the drawings. The connection structure with the external terminal electrode in the semiconductor package is not limited to the embodiment described in the above embodiment. In the above-described embodiments, the description has been given taking the case of manufacturing FO-WLP type semiconductor packages as an example, but the present invention is also applicable to manufacturing other semiconductor packages such as fan-in type WLP.
In the above-described embodiment, the embodiment in which a plurality of adherends (semiconductor chips CP) are bonded to the first pressure-sensitive adhesive layer 12 has been described as an example, but the present invention is not limited to such an embodiment. For example, a plurality of adherends (semiconductor chips CP) may be bonded to the second adhesive layer 13.
In the above-described embodiment, the case where the adherend (semiconductor chip CP) is bonded to the pressure-sensitive adhesive layer on the upper surface side of the pressure-sensitive adhesive sheet 10 and the energy ray (ultraviolet ray) is irradiated from the lower surface side of the pressure-sensitive adhesive sheet 10 has been described as an example, but the present invention is not limited to such an embodiment. For example, the adherend (semiconductor chip CP) may be bonded to the pressure-sensitive adhesive layer on the lower surface side of the pressure-sensitive adhesive sheet 10, and the energy ray (ultraviolet ray) may be irradiated from the upper surface side of the pressure-sensitive adhesive sheet 10.
The pressure-sensitive adhesive sheet is not limited to the embodiment described in the above embodiment. In another aspect of the psa sheet of the present invention, the psa sheet preferably has a coating layer laminated on any one of the first psa layer and the second psa layer. The adherend (semiconductor chip or the like) is bonded to the adhesive layer on which the coating layer is not laminated.
Fig. 6 shows an adhesive sheet 10A having a coating layer 14.
As a material of the coating layer 14, for example, a composition containing an energy ray curable resin and an inorganic filler is preferable. As the energy ray-curable resin, for example, the energy ray-curable resin (a1) described above can be used. Examples of the inorganic filler include: powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, and the like, beads obtained by spheroidizing any of these powders, single crystal fibers, glass fibers, and the like.
The thickness of the coating layer 14 is preferably 0.5 μm or more and 5 μm or less.
In the method for manufacturing a semiconductor device according to the above embodiment, when the distance D1 between the plurality of semiconductor chips CP is further extended after the expanding step, a step of expanding the second adhesive sheet 20 (hereinafter, may be referred to as "second expanding step") may be performed after the adhesive sheet 10 is peeled off. When the second sheet expanding step is performed, an expanded sheet is preferably used as the second psa sheet 20. The psa sheet (first psa sheet) according to the above-described embodiment is more preferably used as the extended sheet.
In the second expansion step, the intervals between the plurality of semiconductor chips CP are further expanded. The method of stretching the second adhesive sheet 20 in the second sheet expanding step is not particularly limited. For example, the second sheet expanding step may be performed in the same manner as the first sheet expanding step.
The interval between the semiconductor chips CP after the second expansion step is D2. The distance D2 is not particularly limited since it depends on the size of the semiconductor chip CP, but the distance D2 is larger than the distance D1. The distances D2 are preferably 200 μm to 6000 μm, for example, independently of each other.
Claims (14)
1. A method of expanding a wafer, the method comprising:
a bonding step of bonding a plurality of objects to be bonded to the first adhesive layer or the second adhesive layer of the adhesive sheet;
a sheet expanding step of expanding the adhesive sheet to expand the interval between the plurality of adherends; and
an energy ray irradiation step of irradiating the first adhesive layer and the second adhesive layer with an energy ray to cure the first adhesive layer and the second adhesive layer,
the adhesive sheet has:
a first adhesive layer containing a first energy ray-curable resin,
A second adhesive layer containing a second energy ray-curable resin, and
a substrate between the first adhesive layer and the second adhesive layer.
2. The tile expansion method according to claim 1, wherein the first energy ray-curable resin and the second energy ray-curable resin are the same.
3. A method of film expansion according to claim 1 or 2, wherein the composition of the first adhesive layer is the same as the composition of the second adhesive layer.
4. A method according to any one of claims 1 to 3, wherein the thickness of the first adhesive layer is the same as the thickness of the second adhesive layer.
5. A method for expanding sheet according to any one of claims 1 to 4, wherein,
in the bonding step, the plurality of adherends are bonded to the first adhesive layer,
in the energy ray irradiation step, energy rays are irradiated from the second pressure-sensitive adhesive layer side to cure the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer.
6. A method according to any one of claims 1 to 5, wherein the adherend is a semiconductor chip.
7. A method for manufacturing a semiconductor device, comprising the method for expanding a wafer according to any one of claims 1 to 6,
wherein the manufacturing method comprises a step of cutting the workpiece bonded with the adhesive sheet for cutting to obtain a plurality of separated adherends,
in the bonding step, the first pressure-sensitive adhesive layer or the second pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet is bonded to one surface of the plurality of adherends opposite to the surface thereof in contact with the dicing pressure-sensitive adhesive sheet,
after the bonding step, a step of separating the dicing pressure-sensitive adhesive sheet from the plurality of adherends is performed.
8. The method for manufacturing a semiconductor device according to claim 7, wherein the step of expanding is performed after the dicing adhesive sheet is separated from the plurality of adherends.
9. The method for manufacturing a semiconductor device according to claim 7 or 8,
the adhesive sheet for dicing contains expandable fine particles,
in the step of separating the dicing pressure-sensitive adhesive sheet from the plurality of adherends, the expandable fine particles are expanded to separate the plurality of adherends bonded to the pressure-sensitive adhesive sheet from the dicing pressure-sensitive adhesive sheet.
10. The method for manufacturing a semiconductor device according to any one of claims 7 to 9, comprising:
a second transfer step of transferring the plurality of objects to be adhered to a second adhesive sheet having a second base material and a third adhesive layer after the expanding step; and
a third transfer step of transferring the plurality of objects bonded to the second pressure-sensitive adhesive sheet to a third pressure-sensitive adhesive sheet having a third substrate and a fourth pressure-sensitive adhesive layer,
the third adhesive sheet contains expandable fine particles,
in the second transfer step, the third adhesive layer of the second adhesive sheet is bonded to the surface of the plurality of objects to be adhered opposite to the surface thereof in contact with the first adhesive layer or the second adhesive layer, and the adhesive sheet is separated from the plurality of objects to be adhered,
in the third transfer step, the fourth pressure-sensitive adhesive layer of the third pressure-sensitive adhesive sheet is bonded to one of the plurality of adherends on the side opposite to the side in contact with the third pressure-sensitive adhesive layer, and the second pressure-sensitive adhesive sheet is separated from the plurality of adherends.
11. An adhesive sheet, comprising:
a first adhesive layer containing a first energy ray-curable resin,
A second adhesive layer containing a second energy ray-curable resin, and
a substrate between the first adhesive layer and the second adhesive layer,
the adhesive sheet is used in a sheet expanding method, which comprises the following steps:
a bonding step of bonding a plurality of adherends to the first adhesive layer or the second adhesive layer of the adhesive sheet;
a sheet expanding step of expanding the adhesive sheet to expand the interval between the plurality of adherends; and
and an energy ray irradiation step of irradiating the first adhesive layer and the second adhesive layer with an energy ray to cure the first adhesive layer and the second adhesive layer.
12. The adhesive sheet according to claim 11, wherein the first energy-ray curable resin is the same as the second energy-ray curable resin.
13. The adhesive sheet according to claim 11 or 12, wherein the composition of the first adhesive layer is the same as the composition of the second adhesive layer.
14. The adhesive sheet according to any one of claims 11 to 13, wherein the thickness of the first adhesive layer is the same as the thickness of the second adhesive layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-040797 | 2018-03-07 | ||
| JP2018040797 | 2018-03-07 | ||
| PCT/JP2019/008510 WO2019172217A1 (en) | 2018-03-07 | 2019-03-05 | Expanding method, semiconductor device production method, and adhesive sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111886673A true CN111886673A (en) | 2020-11-03 |
Family
ID=67847182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980017581.0A Pending CN111886673A (en) | 2018-03-07 | 2019-03-05 | Method for expanding sheet, method for manufacturing semiconductor device, and adhesive sheet |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7267990B2 (en) |
| KR (1) | KR20200127171A (en) |
| CN (1) | CN111886673A (en) |
| TW (1) | TWI814785B (en) |
| WO (1) | WO2019172217A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202119521A (en) * | 2019-11-12 | 2021-05-16 | 力成科技股份有限公司 | Wafer expanding device |
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| JP5518502B2 (en) * | 2009-01-27 | 2014-06-11 | シチズン電子株式会社 | Manufacturing method of light emitting diode |
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- 2019-03-05 KR KR1020207024307A patent/KR20200127171A/en not_active Application Discontinuation
- 2019-03-05 WO PCT/JP2019/008510 patent/WO2019172217A1/en active Application Filing
- 2019-03-05 JP JP2020505034A patent/JP7267990B2/en active Active
- 2019-03-05 CN CN201980017581.0A patent/CN111886673A/en active Pending
- 2019-03-07 TW TW108107526A patent/TWI814785B/en active
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| JP2003064329A (en) * | 2001-08-30 | 2003-03-05 | Nitto Denko Corp | Heat-releasable adhesive sheet of energy-ray curing type, method for manufacturing cut piece using the same and the cut piece |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20200127171A (en) | 2020-11-10 |
| TWI814785B (en) | 2023-09-11 |
| JPWO2019172217A1 (en) | 2021-02-18 |
| JP7267990B2 (en) | 2023-05-02 |
| WO2019172217A1 (en) | 2019-09-12 |
| TW201939632A (en) | 2019-10-01 |
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