TW201939632A - Expanding method, semiconductor device production method, and adhesive sheet - Google Patents

Abstract

The expanding method of the invention is characterized by comprising: an adhesion step of adhering a plurality of adherends onto a first adhesive material layer (12) or a second adhesive material layer (13) of an adhesive sheet (10) having the first adhesive material layer (12) containing a first energy beam curable resin, the second adhesive material layer (13) containing a second energy beam curable resin, and a base material (11); an expanding step of stretching the adhesive sheet (10) to expand the intervals between the plurality of adherends; and an energy beam irradiation step of irradiating an energy beam onto the first adhesive material layer (12) and the second adhesive material layer (13) causing the first adhesive material layer (12) and the second adhesive material layer (13) to be cured.

Description

Expansion method, manufacturing method of semiconductor device, and adhesive sheet

The present invention relates to an expansion method, a method for manufacturing a semiconductor device, and an adhesive sheet.

In recent years, miniaturization, weight reduction, and high performance of electronic devices have been progressing. Semiconductor devices mounted on electronic devices are also required to be reduced in size, thickness, and density. A semiconductor wafer may be mounted in a package close to its size. Such a package is sometimes referred to as a Chip Scale Package (CSP). As one of the CSPs, a wafer level package (Wafer Level Package; WLP) can be mentioned. In the WLP, an external electrode or the like is formed on a wafer before dicing, and finally the wafer is diced and diced. As the WLP, there are fan-in type and fan-out type. In a fan-out type WLP (hereinafter sometimes referred to simply as "FO-WLP"), a semiconductor wafer is covered with a sealing member to form a semiconductor wafer sealing body so as to become a field larger than a wafer size, and not only the semiconductor wafer In the circuit surface, a redistribution layer or an external electrode is also formed in the surface area of the sealing member.
For example, in Document 1 (International Publication No. 2010/058646), it is described that a plurality of semiconductor wafers singulated from a semiconductor wafer are left with circuit formation surfaces, and a mold member is used to surround the periphery to form an expanded crystal A method for manufacturing a semiconductor package in which a rewiring pattern is extended to an area outside a semiconductor wafer. In the manufacturing method described in Document 1, before a plurality of semiconductor wafers that are singulated are surrounded by a mold member, they are exchanged with an expansion sheet, and the expansion sheet is extended so that the number of semiconductor wafers between the plurality of semiconductor wafers is expanded. Increased distance.
The above-mentioned manufacturing method of FO-WLP is to expand the expansion sheet (adhesive sheet) in order to form the above-mentioned rewiring patterns in areas outside the semiconductor wafer, and to sufficiently separate the semiconductor wafers from each other. The problem of the expanded state of the adhesive sheet. Such a problem is not limited to a semiconductor wafer, and the same applies to other adherends.

An object of the present invention is to provide an expansion method of an adhesive sheet that can maintain the expanded state in an expansion process, and an adhesive sheet used in the expansion method. Another object of the present invention is to provide a method for manufacturing a semiconductor device including the expansion method.
According to one aspect of the present invention, an expansion method is provided, which is characterized by:
Adhesive engineering is a method in which a plurality of adherends are adhered to the first adhesive layer or the second adhesive layer to which a sheet is adhered. The adhesive sheet has a first adhesive containing a first energy ray-curable resin. A layer, a second adhesive layer containing a second energy ray-curable resin, and a substrate between the first adhesive layer and the second adhesive layer;
Expansion project is to expand the aforementioned adhesive sheet to increase the interval between the plurality of adherends; and energy ray irradiation project is to irradiate the first adhesive layer and the second adhesive layer with energy rays so that The first adhesive layer and the second adhesive layer are hardened.
In the expansion method according to an aspect of the present invention, it is preferable that the first energy ray curable resin is the same as the second energy ray curable resin.
In the expansion method according to an aspect of the present invention, it is preferable that the composition of the first adhesive layer is the same as that of the second adhesive layer.
In the expansion method according to an aspect of the present invention, the thickness of the first adhesive layer is preferably the same as the thickness of the second adhesive layer.
In the expansion method according to an aspect of the present invention, in the adhesion process, the plurality of adherends are adhered to the first adhesive layer, and in the energy ray irradiation process, from the side of the second adhesive layer It is desirable to irradiate the energy rays to harden the first adhesive layer and the second adhesive layer.
In the expansion method according to an aspect of the present invention, the coated semiconductor wafer is preferable.
According to one aspect of the present invention, there is provided a method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device including the expansion method according to the aspect of the present invention, which is characterized in that:
Including the process of cutting the workpiece adhered to the adhesive thin plate for cutting to obtain a plurality of pieces of the workpiece,
In the above-mentioned adhesion process, the first adhesive layer or the second adhesive layer of the adhesive sheet is adhered to a surface of the plurality of adherends on a side opposite to a surface in contact with the adhesive sheet for cutting,
After the adhesion process, a process of separating the cutting adhesive sheet and the plurality of adherends is performed.
In the method of manufacturing a semiconductor device according to an aspect of the present invention, the expansion process is performed after separating the dicing adhesive sheet and the plurality of adherends.
In the method for manufacturing a semiconductor device according to an aspect of the present invention, the dicing adhesive sheet includes swellable fine particles, and when the dicing veneer is separated from the plurality of adherends, the swellable fine particles are expanded To separate the plurality of adherends adhered to the adhesive sheet from the adhesive sheet for cutting.
The method for manufacturing a semiconductor device according to an aspect of the present invention includes:
The second transfer process, which is after the aforementioned expansion process, transfers the plurality of adherends to a second adhesive sheet having a second substrate and a third adhesive layer; and a third transfer process, which is Transferring the plurality of adherends adhered to the second adhesive sheet to a third adhesive sheet having a third substrate and a fourth adhesive layer,
The third adhesive sheet includes expandable particles,
In the second transfer process, the third adhesion of the second adhesive sheet is adhered to a surface of the plurality of adherends on a side opposite to a surface in contact with the first adhesive layer or the second adhesive layer. The agent layer separates the adhesive sheet from the plurality of adherends,
In the third transfer process, the fourth adhesive layer of the third adhesive sheet is affixed to the surface of the plurality of adherends on the side opposite to the surface in contact with the third adhesive layer, from the plurality of The adherend separates the second adhesive sheet.
According to one aspect of the present invention, there is provided an adhesive sheet having the following features:
A first adhesive layer containing a first energy ray-curable resin;
A second adhesive layer containing a second energy ray-curable resin; and a substrate between the first adhesive layer and the second adhesive layer,
It is used in an expansion method having the following processes,
Adhesive engineering, in which the first adhesive layer or the second adhesive layer of the adhesive sheet is attached to a plurality of adherends;
Expansion project is to expand the aforementioned adhesive sheet to increase the interval between the plurality of adherends; and energy ray irradiation project is to irradiate the first adhesive layer and the second adhesive layer with energy rays so that The first adhesive layer and the second adhesive layer are hardened.
In the adhesive sheet according to an aspect of the present invention, the first energy ray-curable resin is preferably the same as the second energy ray-curable resin.
In the adhesive sheet according to an aspect of the present invention, the composition of the first adhesive layer is preferably the same as that of the second adhesive layer.
In the adhesive sheet according to an aspect of the present invention, the thickness of the first adhesive layer and the thickness of the second adhesive layer are preferably the same.
According to the present invention, there is provided an expansion method of an adhesive sheet shape that can maintain the expanded state in an expansion process, and an adhesive sheet used in the expansion method. According to another aspect of the present invention, a method for manufacturing a semiconductor device including the expansion method can be provided.

Hereinafter, one embodiment of the present invention will be described.
The adhesive sheet of this embodiment includes a substrate, a first adhesive layer containing a first energy ray-curable resin, and a second adhesive layer containing a second energy ray-curable resin.

[Adhesive sheet]
FIG. 1 is a schematic cross-sectional view showing an adhesive sheet 10 according to an embodiment of the present embodiment. The adhesive sheet 10 includes a substrate 11, a first adhesive layer 12 and a second adhesive layer 13. The shape of the adhesive sheet 10 is, for example, all shapes such as a tape shape (long form) and a label shape (single piece form). In order to distinguish it from other adhesive sheets, the adhesive sheet of this embodiment may be referred to as a first adhesive sheet.

(Base material)
The base material 11 includes a first base material surface 11A and a second base material surface 11B opposite to the first base material surface 11A. In the adhesive sheet 10 of this embodiment, a first adhesive layer 12 is provided on a first substrate surface 11A, and a second adhesive layer 13 is provided on a second substrate surface 11B.
From the viewpoint of making the extension easy, the material of the substrate 11 is preferably a thermoplastic elastomer or a rubber-based material, and a thermoplastic elastomer is more preferable.
Further, from the viewpoint of making it easy to make the elongation large, it is preferable that the material of the base material 11 is a resin having a relatively low glass transition temperature (Tg). The glass transition temperature (Tg) of such a resin is preferably 90 ° C or lower, more preferably 80 ° C or lower, and even more preferably 70 ° C or lower.
Thermoplastic elastomers include urethane-based elastomers, olefin-based elastomers, vinyl chloride-based elastomers, polyester-based elastomers, styrene-based elastomers, acrylic-based elastomers, and fluorene-based elastomers. . Thermoplastic elastomers can be used alone or in combination of two or more.
From the viewpoint of making extension easy, a thermoplastic elastomer is preferably a urethane-based elastomer.
The urethane-based elastomer is generally obtained by reacting a long-chain polyol, a chain extender, and a diisocyanate. The urethane-based elastomer is composed of a soft segment having a structural unit derived from a long-chain polyol, and a hard segment having a polyurethane structure obtained from a reaction between a chain extender and a diisocyanate. .
If the urethane-based elastomer is classified according to the type of the long-chain polyol, it can be divided into: polyester-based polyurethane elastomer, polyether-based polyurethane elastomer, and polycarbonate Ester-based polyurethane elastomers and the like. The urethane-based elastomer can be used alone or in combination of two or more. In this embodiment, it is preferable that the urethane-based elastomer is a polyether-based urethane elastomer from the viewpoint of easily extending the stretch.
Examples of long-chain polyols include polyester polyols such as lactone-based polyester polyols and adipate-based polyester polyols; polypropylene (ethylene) polyols, and polytetramethylene ether B Polyether polyols such as glycols; polycarbonate polyols and the like. In this embodiment, it is preferable that the long-chain polyol is an adipate-based polyester polyol from the viewpoint that the extension is easily increased.
Examples of the diisocyanate include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, and hexamethylene diisocyanate. In this embodiment, it is preferable that a diisocyanate is a hexamethylene diisocyanate from a viewpoint that it is easy to make extension large.
Examples of the chain extender include low-molecular-weight polyols (for example, 1,4-butanediol and 1,6-hexanediol), and aromatic diamines. Among these, the use of 1,6-hexanediol is preferable from the viewpoint that the extension is easily increased.
Examples of the olefin-based elastomer include ethylene-α-olefin copolymer, propylene-α-olefin copolymer, butene-α-olefin copolymer, ethylene-propylene-α-olefin copolymer, and ethylene-butylene. ･ Α-olefin copolymer, propylene ･ butene-α olefin copolymer, ethylene ･ propylene ･ butene-α ･ olefin copolymer, styrene ･ isoprene copolymer, and styrene ･ ethylene ･ butene copolymer An elastomer of at least one resin selected from the group. The olefin-based elastomer may be used alone or in combination of two or more. The density of the olefin-based elastomer is not particularly limited. For example, the density of olefin-based elastomers is 0.860 g / cm ³ Above and below 0.905g / cm ³ For ideal, 0.862g / cm ³ Above and below 0.900 g / cm ³ For more ideal, 0.864g / cm ³ Above and below 0.895g / cm ³ Is particularly desirable. When the density of the olefin-based elastomer falls within the above range, the substrate 11 is excellent in unevenness followability when a semiconductor wafer as an adherend is attached to an adhesive thin plate.
The olefin-based elastomer is a total unit weight used to form this elastomer, and the mass ratio of the olefin-based compound (also referred to as “olefin content rate” in this specification) is 50 masses. It is preferably at least 100% and at most 100% by mass.
When the olefin content is excessively low, the properties of an elastomer containing structural units derived from an olefin do not easily appear, and it is difficult for the base material 11 to exhibit flexibility and rubber elasticity.
From the viewpoint of stably obtaining flexibility and rubber elasticity, the olefin content is preferably 50% by mass or more, and more preferably 60% by mass or more.
Examples of the styrene-based elastomer include a styrene-conjugated diene copolymer and a styrene-olefin copolymer. Specific examples of the styrene-conjugated diene copolymer include a styrene-butadiene copolymer, a styrene-butadiene-styrene copolymer (SBS), and a styrene-butadiene-butene- Unhydrogenated benzene of styrene copolymer, styrene-isoprene copolymer, styrene-isoprene-styrene copolymer (SIS), styrene-ethylene-isoprene-styrene copolymer, etc. Ethylene-conjugated diene copolymer, styrene-ethylene / propylene-styrene copolymer (SEPS, hydride of styrene-isoprene-styrene copolymer), and styrene-ethylene-butene-benzene Water-added styrene-conjugated diene copolymers such as ethylene copolymers (SEBS, hydride of styrene-butadiene copolymers) and the like. Industrially, as the styrene-based elastomer, Tufprene (manufactured by Asahi Kasei Co., Ltd.), Kraton (manufactured by Kraton Polymer Japan Co., Ltd.), Sumitomo TPE-SB (manufactured by Sumitomo Chemical Co., Ltd.), and EPOFRIEND (manufactured by DAICEL Corporation) ), RABALON (made by Mitsubishi Chemical Co., Ltd.), SEPTON (made by Kuraray Co., Ltd.), and Tuftec (made by Asahi Kasei Co., Ltd.). The styrene-based elastomer may be a hydride or a non-hydride. The styrene-based elastomer may be used alone or in combination of two or more.
Examples of the rubber-based material include natural rubber, synthetic isoprene rubber (IR), butadiene rubber (BR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), and acrylic. Nitrile-butadiene copolymer rubber (NBR), butyl rubber (IIR), halogenated butyl rubber, acrylic rubber, urethane rubber, and polyvulcanized rubber. The rubber-based material may be used alone or in combination of two or more of them.
The base material 11 may be a laminated film in which a plurality of films made of the aforementioned materials (for example, a thermoplastic elastomer or a rubber-based material) are laminated. In addition, the base material 11 may be a laminated film in which a film made of such a material (for example, a thermoplastic elastomer or a rubber-based material) and other films are laminated.
The base material 11 may contain an additive in a film containing the above-mentioned resin-based material as a main material. Examples of the additives include pigments, dyes, flame retardants, plasticizers, antistatic agents, lubricants, and fillers. Examples of the pigment include titanium dioxide and carbon black. Examples of the filler include organic materials such as melamine resin, inorganic materials such as fumed silica, and metal materials such as nickel particles. The content of such an additive is not particularly limited, but it is desirable that the content is limited to a range in which the substrate 11 can exhibit desired functions.
The substrate 11 is for the purpose of improving the adhesion between the adhesive layers (the first adhesive layer 12 and the second adhesive layer 13) laminated on the first substrate surface 11A and the second substrate surface 11B. Surface treatment or primer treatment can also be performed on one or both sides as desired. Examples of the surface treatment include an oxidation method and an uneven method. As a primer treatment, the method of forming a primer layer on the surface of the base material 11 is mentioned. Examples of the oxidation method include corona discharge treatment, ion discharge treatment, chromium oxidation treatment (wet), flame treatment, hot air treatment, ozone treatment, and ultraviolet irradiation treatment. Examples of the unevenness method include a sand blast method and a thermal spray treatment method.
Since the first adhesive layer 12 and the second adhesive layer 13 have an energy ray-curable adhesive, it is desirable that the substrate 11 has permeability to energy rays. When the energy ray-curable adhesive is an ultraviolet-curable adhesive, the base material 11 is preferably transparent to ultraviolet rays. When the energy ray-curable adhesive is an electron ray-curable adhesive, it is desirable that the base material 11 has electron beam permeability.
The thickness of the base material 11 is not limited as long as the adhesive sheet 10 can properly perform its function in a desired process. The thickness of the substrate 11 is preferably 20 μm or more, and more preferably 40 μm or more. The thickness of the substrate 11 is preferably 250 μm or less, and more preferably 200 μm or less.
In addition, the standard deviation of the thickness of the base material 11 when the thicknesses at a plurality of locations are measured at 2 cm intervals in the in-plane direction of the first base material surface 11A or the second base material surface 11B of the base material 11 is preferably 2 μm or less, 1.5 The thickness is preferably less than 1 μm, and more preferably less than 1 μm. With this standard deviation being 2 μm or less, the adhesive sheet 10 has a highly accurate thickness, and the adhesive sheet 10 can be uniformly extended.
At 23 ° C, the tensile elastic modulus in the MD direction and the CD direction of the substrate 11 are 10 MPa and 350 MPa, respectively. At 23 ° C, the 100% stress in the MD direction and the CD direction of the substrate 11 are 3 MPa and 20 MPa, respectively. As ideal.
When the tensile elastic modulus and the 100% stress are in the above ranges, the stretched adhesive sheet 10 can be expanded.
The 100% stress of the substrate 11 is a value obtained next. A test piece having a size of 150 mm (length direction) × 15 mm (width direction) was cut out from the substrate 11. The both ends of the cut-out test piece in the longitudinal direction were held with a jig so that the length between the jigs became 100 mm. After the test piece was held by a jig, it was stretched in the longitudinal direction at a speed of 200 mm / min, and the measured value of the tensile force when the length between the jigs was 200 mm was read. The 100% stress of the base material 11 is a value obtained by dividing the read tensile force measurement value by the cross-sectional area of the base material 11. The cross-sectional area of the substrate 11 was calculated by 15 mm in the width direction × the thickness of the substrate 11 (test piece). This cutting out is performed so that the flow direction (MD direction) or the direction orthogonal to the MD direction (CD direction) and the longitudinal direction of the test piece at the time of manufacturing the base material 11 are aligned. In this tensile test, the thickness of the test piece is not particularly limited, and may be the same as the thickness of the substrate to be tested.
At 23 ° C., the breaking elongation in the MD direction and the CD direction of the substrate 11 is preferably 100% or more.
Since the breaking elongation in the MD direction and the CD direction of the substrate 11 are 100% or more, breakage does not occur, and the adhesive sheet 10 can be extended and extended.
The tensile elastic modulus (MPa) of the base material and the breaking elongation (%) of the base material can be measured next.
The substrate was cut into 15 mm × 140 mm to obtain a test piece. In this test piece, the elongation at break and the tensile elasticity at 23 ° C. were measured in accordance with JIS K7161: 2014 and JIS K7127: 1999. Specifically, a tensile tester (manufactured by Shimadzu Corporation, product name "Autograph AG-IS 500N") was used to set the test piece at a distance between chucks of 100 mm, and then pulled at a speed of 200 mm / min. The tensile test measures the elongation at break (%) and the tensile elastic modulus (MPa). The measurement was performed on both the flow direction (MD) and the right-angle direction (CD) during the production of the substrate.

(Adhesive layer)
In the adhesive sheet 10 of this embodiment, the first adhesive layer 12 and the second adhesive layer 13 are energy-ray-curable adhesives.
It is preferable that the first energy ray-curable resin containing the first adhesive layer 12 and the second energy ray-curable resin containing the second adhesive layer 13 are the same resin.
The composition of the first adhesive layer 12 and the composition of the second adhesive layer 13 are the same and more desirable.
The thicknesses of the first adhesive layer 12 and the second adhesive layer 13 are not particularly limited.
The thicknesses of the first adhesive layer 12 and the second adhesive layer 13 are independent of each other, for example, it is preferably 10 μm or more, and more preferably 20 μm or more. The thicknesses of the first adhesive layer 12 and the second adhesive layer 13 are independent of each other, and it is preferably 150 μm or less, and more preferably 100 μm or less.
The thickness of the first adhesive layer 12 and the thickness of the second adhesive layer 13 are preferably the same.
The first energy ray-curable resin and the second energy ray-curable resin are the same resin, and the thickness of the first adhesive layer 12 and the thickness of the second adhesive layer 13 are the same, so that the first adhesive layer 12 The difference in shrinkage between the second adhesive layer 13 and the second adhesive layer 13 when cured is reduced or reduced, and curling of the adhesive sheet 10 can be suppressed.
The composition of the first adhesive layer 12 is the same as that of the second adhesive layer 13, and the thickness of the first adhesive layer 12 and the thickness of the second adhesive layer 13 are the same, so that the first adhesive layer 12 The difference in the amount of shrinkage between the second adhesive layer 13 and the second adhesive layer 13 when cured is reduced or reduced, and curling of the adhesive sheet 10 can be further suppressed.
The first energy ray-curable resin contained in the first adhesive layer 12 and the second energy ray-curable resin contained in the second adhesive layer 13 may be resins different from each other. In this case, the difference between the shrinkage amount when the first adhesive layer 12 is hardened and the shrinkage amount when the second adhesive layer 13 is hardened is the same as that of the first adhesive layer 12 and the second adhesive. The composition of the layer 13 and the thickness of the adhesive layer are desirable. In order to reduce or reduce the difference in shrinkage, for example, the composition of the first adhesive layer 12 and the second adhesive layer 13 and the adhesive layer may be adjusted by appropriately selecting from among materials that can be used in the adhesive layer described later. Thickness is sufficient.
The first energy ray curable resin and the second energy ray curable resin are preferably ultraviolet curable resins. In this case, the first adhesive layer 12 and the second adhesive layer 13 can be hardened by ultraviolet rays without changing the energy rays irradiated to the respective adhesive layers, so that the manufacturing process can be simplified.

･ Energy ray hardening resin (a1)
The first adhesive layer 12 and the second adhesive layer 13 each preferably contain an energy ray-curable resin (a1) independently. The energy ray-curable resin (a1) is a double bond having energy ray-curable properties in the molecule.
The adhesive layer containing an energy ray-curable resin is hardened by irradiation with energy rays. Therefore, after the adhesive sheet 10 is expanded, the first adhesive layer 12 and the second adhesive layer 13 provided on both sides of the substrate 11 are hardened, and the expanded state of the adhesive sheet 10 is easily maintained.
In addition, the adhesive layer containing the energy ray-curable resin is hardened by irradiation with energy rays, and the adhesive force is reduced. When it is desired to separate the adherend and the adhesive sheet, the adhesive layer can be easily separated by irradiating energy rays to the adhesive layer.
The energy ray curable resin (a1) is preferably a (meth) acrylic resin.
The energy ray-curable resin (a1) is preferably an ultraviolet-curable resin, and more preferably an ultraviolet-curable (meth) acrylic resin.
The energy ray-curable resin (a1) is a resin that is polymerized and hardened upon irradiation with energy rays. Examples of the energy rays include ultraviolet rays and electron rays.
Examples of the energy ray curable resin (a1) include low molecular weight compounds (monofunctional monomers, polyfunctional monomers, monofunctional oligomers, and polyfunctional oligomers) having an energy ray polymerizable group.物). Specific examples of the energy ray curable resin (a1) include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-Butanediol diacrylate, 1,6-hexanediol diacrylate, acrylate, etc., dicyclopentadiene dimethoxy diacrylate, isobornyl acrylate, etc. Aliphatic backbone acrylates, and polyethylene glycol diacrylates, oligoester acrylates, urethane acrylate oligomers, epoxy modified acrylates, polyether acrylates, and itaconic acid oligomers Acrylate compounds such as polymers. The energy ray-curable resin (a1) can be used alone or in combination of two or more.
The molecular weight of the energy ray-curable resin (a1) is usually about 100 or more and 30,000 or less, and preferably about 300 or more and 10,000 or less.

･ (Meth) acrylic copolymer (b1)
The first adhesive layer 12 and the second adhesive layer 13 each preferably further include a (meth) acrylic copolymer (b1). The (meth) acrylic copolymer is different from the energy ray-curable resin (a1) described above.
The (meth) acrylic copolymer (b1) is preferably a carbon-carbon double bond having energy ray curability. That is, in this embodiment, the first adhesive layer 12 and the second adhesive layer 13 are energy ray curable resin (a1) and energy ray curable (meth) acrylic copolymer ( b1) is ideal.
The first adhesive layer 12 and the second adhesive layer 13 each independently contain an energy ray-curable resin in an amount of 10 parts by mass or more with respect to 100 parts by mass of the (meth) acrylic copolymer (b1) ( a1) is preferable, and it is more preferable to contain it in a ratio of 20 parts by mass or more, and it is more preferable to contain it in a ratio of 25 parts by mass or more.
The first adhesive layer 12 and the second adhesive layer 13 each independently contain an energy ray-curable resin at a ratio of 80 parts by mass or less with respect to 100 parts by mass of the (meth) acrylic copolymer (b1) ( a1) is preferable, and it is more preferable to contain it in a ratio of 70 parts by mass or less, and it is more preferable to contain it in a ratio of 60 parts by mass or less.
The weight average molecular weight (Mw) of the (meth) acrylic copolymer (b1) is preferably 10,000 or more, more preferably 150,000 or more, and more preferably 200,000 or more.
The weight average molecular weight (Mw) of the (meth) acrylic copolymer (b1) is preferably 1.5 million or less, and more preferably 1 million or less.
In addition, the weight average molecular weight (Mw) in this specification is a standard polystyrene conversion value measured by the gel permeation chromatography (GPC).
The (meth) acrylic copolymer (b1) is a (meth) acrylate polymer (b2) (hereinafter referred to as " The energy ray-curable polymer (b2) ″) is preferred.
The energy ray-curable polymer (b2) is obtained by reacting an acrylic copolymer (b21) having a monomer unit containing a functional group with an unsaturated group-containing compound (b22) having a functional group bonded to the functional group. Copolymers are ideal. In addition, in this specification, a (meth) acrylate means both an acrylate and a methacrylate. The same applies to other similar terms.
The acrylic copolymer (b21) includes a constituent unit guided by a functional group-containing monomer and a constituent unit guided by a (meth) acrylate monomer or a derivative of the (meth) acrylate monomer. .
The functional group-containing monomer as a constituent unit of the acrylic copolymer (b21) is preferably a monomer having a polymerizable double bond and a functional group in the molecule. The functional group is preferably at least any one selected from the group consisting of a hydroxyl group, a carboxyl group, an amine group, a substituted amine group, and an epoxy group.
Examples of the hydroxyl-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, and 2-hydroxybutyl (Meth) acrylate, 3-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and the like. The hydroxyl group-containing monomer may be used alone or in combination of two or more.
Examples of the carboxyl group-containing monomer include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. The carboxyl group-containing monomer may be used alone or in combination of two or more.
Examples of the amine group-containing monomer or the substituted amine group-containing monomer include amine ethyl (meth) acrylate and n-butylamino ethyl (meth) acrylate. The amine group-containing monomer or the substituted amine group-containing monomer may be used alone or in combination of two or more.
As the (meth) acrylic acid ester monomer constituting the acrylic copolymer (b21), in addition to an alkyl (meth) acrylic acid ester having a carbon number of 1 or more and 20 or less, for example, it can be suitably used to have a lipid in the molecule. A monomer having a cyclic structure (a monomer containing an alicyclic structure).
The alkyl (meth) acrylate is preferably an alkyl (meth) acrylate having 1 to 18 carbon atoms in the alkyl group. Alkyl (meth) acrylates are, for example, meth (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl (meth) acrylate, and 2 -Ethylhexyl (meth) acrylate and the like are more preferable. Alkyl (meth) acrylates can be used individually by 1 type or in combination of 2 or more types.
As the alicyclic structure-containing monomer, for example, cyclohexyl (meth) acrylate, dicyclopentyl (meth) acrylate, adamantane (meth) acrylate, isoamyl (meth) acrylate, Dicyclopentenyl (meth) acrylate, dicyclopentenyloxy (meth) acrylate, and the like. The alicyclic structure-containing monomer may be used alone or in combination of two or more.
The acrylic copolymer (b21) preferably contains a constitutional unit guided by the functional group-containing monomer in a proportion of 1% by mass or more, more preferably in a proportion of 5% by mass or more, and in a proportion of 10% by mass or more Contains more ideal.
The acrylic copolymer (b21) preferably contains 35% by mass or less of a constituent unit guided by the functional group-containing monomer, and more preferably contains 30% by mass or less of 25% by mass or less. The ratio contains more ideal.
The acrylic copolymer (b21) preferably contains a constituent unit guided by a (meth) acrylate monomer or a derivative thereof in a proportion of 50% by mass or more, and more preferably in a proportion of 60% by mass or more. It is more preferable that the content be 70% by mass or more.
The acrylic copolymer (b21) preferably contains a constituent unit guided by a (meth) acrylate monomer or a derivative thereof in a proportion of 99% by mass or less, and more preferably in a proportion of 95% by mass or less. The content is more preferably 90% by mass or less.
The acrylic copolymer (b21) can be obtained by copolymerizing the above-mentioned functional group-containing monomer and a (meth) acrylate monomer or a derivative thereof by a common method.
The acrylic copolymer (b21) is a constituent unit other than the above-mentioned monomers, and may contain at least any one selected from the group consisting of dimethylacrylamide, vinyl formate, vinyl acetate, and styrene. .
An energy ray-curable polymer can be obtained by reacting the acrylic copolymer (b21) having the functional unit-containing monomer unit and the unsaturated group-containing compound (b22) having a functional group bonded to the functional group. (b2).
The functional group of the unsaturated group-containing compound (b22) can be appropriately selected according to the type of the functional group of the functional unit-containing monomer unit that the acrylic copolymer (b21) has. For example, when the functional group of the acrylic copolymer (b21) is a hydroxyl group, an amine group, or a substituted amine group, it is preferable that the functional group of the unsaturated group-containing compound (b22) is an isocyanate group or an epoxy group. When the functional group of the acrylic copolymer (b21) is an epoxy group, the functional group of the unsaturated group-containing compound (b22) is preferably an amine group, a carboxyl group, or an aziridinyl group.
The unsaturated group-containing compound (b22) contains at least one energy ray polymerizable carbon-carbon double bond in one molecule, and preferably contains one or more and six or less, more preferably one or more and four or less .
Examples of the unsaturated group-containing compound (b22) include 2-methacryloxyethyl isocyanate (2-isocyanatoethyl methacrylate) and methisopropenyl-α, α- Dimethyl benzyl isocyanate, methacryl isocyanate, allyl isocyanate, 1,1- (bispropenyloxymethyl) ethyl isocyanate; via a diisocyanate compound or a polyisocyanate compound and a hydroxyethyl ( Acrylic fluorenyl monoisocyanate compound obtained by reaction of meth) acrylate; Acrylic fluorenyl monoisocyanate obtained by reaction of diisocyanate compound or polyisocyanate compound with polyol compound and hydroxyethyl (meth) acrylate Compounds; glycidyl (meth) acrylate; (meth) acrylic acid, 2- (1-aziridinyl) ethyl (meth) acrylate, 2-vinyl-2-oxazoline , 2-isopropenyl-2-oxazoline and the like.
The unsaturated group-containing compound (b22) has a molar number relative to the functional group-containing monomer of the acrylic copolymer (b21), and is preferably used at a ratio (addition rate) of 50 mol% or more and 60 mol. It is more ideal to use more than 70% of ears, and more ideal to use more than 70% of moles.
In addition, the unsaturated group-containing compound (b22) is a mole number of the functional group-containing monomer relative to the acrylic copolymer (b21), and is preferably used in a proportion of 95 mole% or less, and is preferably 93 mole% or less. The ratio is more ideal, and it is more ideal to use it at a ratio of 90 mol% or less.
In the reaction between the acrylic copolymer (b21) and the unsaturated group-containing compound (b22), the functional group of the acrylic copolymer (b21) and the functional group of the unsaturated group-containing compound (b22) can be used according to the functions The combination of the bases is used to appropriately select the reaction temperature, pressure, solvent, time, presence or absence of catalyst, and type of catalyst. As a result, the functional group of the acrylic copolymer (b21) and the functional group of the unsaturated group-containing compound (b22) react, and the unsaturated group is introduced into the side chain of the acrylic copolymer (b21). , Energy ray curable polymer (b2) can be obtained.
The weight average molecular weight (Mw) of the energy ray-curable polymer (b2) is preferably 10,000 or more, more preferably 150,000 or more, and more preferably 200,000 or more.
The weight average molecular weight (Mw) of the energy ray-curable polymer (b2) is preferably 1.5 million or less, and more preferably 1 million or less.
･ Photopolymerization initiator (C)
The first adhesive layer 12 and the second adhesive layer 13 each preferably contain a photopolymerization initiator (C) independently. Since the first adhesive layer 12 and the second adhesive layer 13 contain a photopolymerization initiator (C), the polymerization hardening time and the amount of light exposure can be reduced.
Specific examples of the photopolymerization initiator (C) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ether, benzoin isopropyl ether, and benzoin Butyl ether, benzoin benzoic acid, methyl benzoin benzoate, benzoin dimethyl acetal, 2,4-diethylthioxanthone, 1-hydroxycyclohexylphenyl ketone, Benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, diphenylethylenedione, bibenzyl, diethylfluorenyl, β-chloroanthraquinone, (2,4 , 6-trimethylbenzyldiphenyl) phosphine oxide, 2-benzothiazole-N, N-diethyldithiocarbamate, oligomeric {2-hydroxy-2-methyl-1 -[4- (1-propenyl) phenyl] acetone}, 2,2-dimethoxy-1,2-diphenylethane-1 ketone, and the like. These photopolymerization initiators (C) may be used alone or in combination of two or more.
The photopolymerization starter (C) is compared with the energy ray-curable resin (a1) and (methyl) when the energy ray-curable resin (a1) and (meth) acrylic copolymer (b1) are blended in the adhesive layer. A total amount of 100 parts by mass of the acrylic copolymer (b1) is preferably used in an amount of 0.1 parts by mass or more, and more preferably used in an amount of 0.5 parts by mass or more.
In addition, when the photopolymerization initiator (C) is formulated with the energy ray curable resin (a1) and the (meth) acrylic copolymer (b1) in the adhesive layer, the photopolymerization initiator (C) is compared with the energy ray curable resin (a1) and (a). The total amount of the base) acrylic copolymer (b1) is 100 parts by mass, and is preferably used in an amount of 10 parts by mass or less, and more preferably used in an amount of 6 parts by mass or less.
The first adhesive layer 12 and the second adhesive layer 13 may be formulated with other components in addition to the components described above. Other components are, for example, a crosslinking agent (E).

･ Crosslinking agent (E)
The cross-linking agent (E) is a polyfunctional compound having a reactivity with a functional group included in the (meth) acrylic copolymer (b1) and the like. Examples of such a polyfunctional compound include an isocyanate compound, an epoxy compound, an amine compound, a melamine compound, an aziridine compound, a hydrazine compound, an aldehyde compound, an oxazoline compound, a metal alkoxide compound, and a metal chelate. Chemical compounds, metal salts, ammonium salts, and reactive phenol resins.
The blending amount of the cross-linking agent (E) is preferably 0.01 parts by mass or more relative to 100 parts by mass of the (meth) acrylic copolymer (b1), more preferably 0.03 parts by mass or more, and more preferably 0.04 parts by mass or more.
The blending amount of the cross-linking agent (E) is preferably 100 parts by mass with respect to the (meth) acrylic copolymer (b1), preferably 8 parts by mass or less, more preferably 5 parts by mass or less, and more preferably 3.5 parts by mass or less. .
The recovery rate of the adhesive sheet of this embodiment is preferably 70% or more, more preferably 80% or more, and more preferably 85% or more. The recovery rate of the adhesive sheet of this embodiment is preferably 100% or less. With the recovery ratio in the above range, the adhesive sheet can be extended.
The recovery rate is obtained by cutting out the adhesive sheet 10 into a test piece of 150 mm (length direction) × 15 mm (width direction), and holding both ends in the length direction with a length of 100 mm between the grips and grasping them with the grips. Then, it was stretched at a speed of 200mm / min until the length between the clamps became 200mm, and it was maintained for 1 minute while the length between the clamps was expanded to 200mm, and then returned to the length direction at 200mm / min. The length between the clamps became 100 mm, and it was held for 1 minute while the length between the clamps returned to 100 mm. Thereafter, it was stretched in the length direction at a speed of 60 mm / min, and the measured value of the tensile force was 0.1 N / 15 mm. The length between fixtures at this time is set to L2 (mm) after subtracting the length of the initial fixture space from 100 mm from this length, and the initial fixture space is subtracted from the length of the expanded fixture space 200 mm. When the length after 100 mm is set to L1 (mm), it is calculated by the following mathematical formula (Expression 2).

Recovery rate (%) = {1- (L2 ÷ L1)} × 100 ･ ･ ･ (Eq. 2)

(Peel sheet)
The adhesive sheet 10 of this embodiment protects the first adhesive layer 12 and the second adhesive while the first adhesive layer 12 or the second adhesive layer 13 is attached to an adherend (such as a semiconductor wafer). The purpose of the layer 13 is also to laminate the peeling sheet on the first adhesive layer 12 and the second adhesive layer 13. The configuration of the peeling sheet is arbitrary. An example of a release sheet is a plastic film which is subjected to a release treatment with a release agent or the like.
Specific examples of the plastic film include a polyester film and a polyolefin film. Examples of the polyester film include films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate. Examples of the polyolefin film include polypropylene and polyethylene.
As the release agent, a silicone-based, fluorine-based, long-chain alkyl-based or the like can be used. Of these release agents, a polysiloxane based on inexpensive and stable performance is preferred.
The thickness of the release sheet is not particularly limited. The thickness of the peeling sheet is usually 20 μm or more and 250 μm or less.

(Manufacturing method of adhesive sheet)
The adhesive sheet 10 of this embodiment can be manufactured in the same manner as the conventional adhesive sheet.
The method for manufacturing the adhesive sheet 10 is not particularly limited, as long as the first adhesive layer 12 is laminated on the first substrate surface 11A of the substrate 11 and the second adhesive layer 13 is laminated on the second substrate surface 11B. can.
As a first example of the method for manufacturing the adhesive sheet 10, the next method may be mentioned. First, an adhesive composition constituting the first adhesive layer 12 and a coating liquid (sometimes referred to as a first coating liquid) which further contains a solvent or a dispersing medium as desired, and the second adhesive layer 13 are prepared. An adhesive composition and a coating liquid (sometimes referred to as a second coating liquid) containing a solvent or a dispersing medium as desired. Next, a first coating liquid is applied to the surface of the first substrate surface 11A of the substrate 11 by a coating means to form a coating film. Examples of the coating means include a die coater, a curtain coater, a spray coater, a slit coater, and a knife coater. Next, by drying the coating film, the first adhesive layer 12 can be formed. The coating liquid is not particularly limited as long as it can be applied. The coating fluid may include a component for forming an adhesive layer as a solute, and a coating fluid may include a component for forming an adhesive layer as a dispersant. The second adhesive layer 13 is formed by applying a second coating liquid on the surface of the second substrate surface 11B of the substrate 11, and can be formed in the same manner as the first adhesive layer 12. As a modification of the first example, the second adhesive layer 13 may be formed first, and then the first adhesive layer 12 may be formed later.
As a second example of a method for producing an adhesive sheet, the following method can be mentioned. First, a first coating liquid is applied to the peeling surface of the aforementioned peeling sheet to form a first coating film. Next, the first coating film is dried to form a laminated body composed of the first adhesive layer 12 and the release sheet. Next, the base material 11 is affixed to the surface of the adhesive layer of this laminated body on the surface opposite to the surface on the peeling sheet side. Next, a second coating liquid is applied to the exposed surface of the substrate 11 to form a second coating film. The second coating film is dried to form a second adhesive layer 13. In this way, a laminated body in which the release sheet, the first adhesive layer 12, the substrate 11 and the second adhesive layer 13 are laminated is formed. A release sheet may be further laminated on the second adhesive layer 13 of the laminate. The release sheet of this laminated body can be peeled as an engineering material, or it can be protected until an adherend (for example, a semiconductor wafer or a semiconductor wafer) is attached to the adhesive layer. As a modification of the second example, a method in which a laminate including a release sheet, a second adhesive layer 13 and a substrate 11 is formed first, and then a first adhesive layer 12 is formed on the laminate may be used.
As a third example of the method for producing an adhesive sheet, the next method can be mentioned. As in the second example described above, a first laminated body in which a release sheet (first release sheet), a first adhesive layer 12 and a base material 11 are laminated is formed. On the other hand, a second coating liquid is applied to the release surface of another release sheet (second release sheet) to form a second coating film. Next, the second coating film is dried to form a second laminate including the second adhesive layer 13 and the second release sheet. By laminating the second adhesive layer 13 of the second laminated body to the exposed surface of the base material 11 of the first laminated body, a first release sheet, a first adhesive layer 12, a base material 11, and a second layer are formed. The third laminate of the adhesive layer 13 and the second release sheet. The release sheet of the third laminate may be peeled as an engineering material, or may be protected until the adherend (for example, a semiconductor wafer or a semiconductor wafer) is attached to the adhesive layer. As a modification of the third example, a first laminated body formed of a release sheet, a second adhesive layer 13 and a base material may be formed, and a second laminate formed of a release sheet and the first adhesive layer 12 may be formed. The laminated body is a method of bonding a first laminated body and a second laminated body.
The order of laminating the first adhesive layer 12 and the second adhesive layer 13 on the substrate 11 is not particularly limited.
When the coating liquid contains a cross-linking agent, the (meth) acrylic copolymer in the coating film can be changed by changing the drying conditions (such as temperature and time) of the coating film or by performing additional heat treatment. (b1) The bridging reaction with the cross-linking agent progresses, and it is sufficient to form a bridging structure with a desired existence density in the adhesive layer. In order to make the bridging reaction fully progress, the first adhesive layer 12 and the second adhesive layer 13 can also be laminated on the substrate 11 by the method described above, and then, for example, performed at 23 ° C. and a relative humidity of 50%. The health of the adhesive sheet 10 obtained by leaving the environment to stand for several days.
The thickness of the adhesive sheet 10 of this embodiment is preferably 30 μm or more, and more preferably 50 μm or more. The thickness of the adhesive sheet 10 is preferably 400 μm or less, and more preferably 300 μm or less.

[How to use the adhesive sheet]
Since the adhesive sheet 10 of this embodiment can be attached to various adherends, the adherend to which the adhesive sheet 10 of this embodiment can be applied is not particularly limited. For example, the adherend is preferably a semiconductor wafer and a semiconductor wafer.
The adhesive sheet 10 of this embodiment is also applicable to an expansion method.
Specifically, the expansion method using the adhesive sheet 10 may include an expansion method having the following processes, a plurality of adherend adherence processes to adhere the first adherent layer 12 or the second adherent layer 13, and adhesion The thin plate 10 is expanded to expand the space between the plurality of adherends, and the first adhesive layer 12 and the second adhesive layer 13 are irradiated with energy rays to make the first adhesive layer 12 and the second adhesive. The energy ray irradiation process in which the layer 13 is hardened.
In this expansion method, in the adhesion process, the plurality of adherends described above are adhered to the first adhesive layer 12, and in the energy ray irradiation process, the energy rays are irradiated from the second adhesive layer 13 side to make the first It is preferable that the adhesive layer 12 and the second adhesive layer 13 are hardened.
The adhesive sheet 10 of the present embodiment can be used, for example, for semiconductor processing.
In addition, the adhesive sheet 10 of this embodiment can be used for increasing the interval between a plurality of semiconductor wafers to be adhered to one surface of the substrate 11.
The expansion method using the above-mentioned adhesive sheet 10 is also applicable to a semiconductor processing process. Specifically, when the adherend is a semiconductor wafer or a semiconductor wafer, an expansion method using an adhesive sheet 10 may be included as one of the processes for manufacturing a semiconductor device.
The expansion interval of a plurality of semiconductor wafers is not particularly limited depending on the size of the semiconductor wafer. The adhesive sheet 10 is preferably used in order to increase the distance between adjacent semiconductor wafers of a plurality of semiconductor wafers adhered to one side of the adhesive sheet 10 by 200 μm or more. The upper limit of the distance between the semiconductor wafers is not particularly limited. The upper limit of the distance between the semiconductor wafers is, for example, 6000 μm.
Moreover, the adhesive sheet 10 of this embodiment can also be used in the case where the space | interval of the multiple semiconductor wafer laminated | stacked on one surface of the adhesive sheet 10 is extended by extending at least 2 axes. In this case, the adhesive sheet 10 is stretched by applying tension in four directions of + X axis direction, -X axis direction, + Y axis direction, and -Y axis direction, which are orthogonal to each other in the X and Y axes, for example. In other words, they are respectively elongated in the MD direction and the CD direction of the substrate 11.
The above-mentioned biaxial stretching can be performed using, for example, a spacer device that applies tension in the X-axis direction and the Y-axis direction. Here, the X-axis and the Y-axis are orthogonal, and one of the directions parallel to the X-axis is set to the + X-axis direction, and the direction opposite to the + X-axis direction is set to the -X-axis direction. Let one of the directions parallel to the Y axis be the + Y axis direction, and the direction opposite to the + Y axis direction be the -Y axis direction.
The above-mentioned intervening device applies tension to the adhesive sheet 10 in four directions: + X-axis direction, -X-axis direction, + Y-axis direction, and -Y-axis direction. Each of the four directions includes a plurality of holding means and corresponding measures. The plural means for imparting the tension are ideal. The number of holding means and tension applying means in each direction depends on the size of the adhesive sheet 10, and may be, for example, about 3 or more and 10 or less.
Here, in the group including a plurality of holding means and a plurality of tension applying means provided for, for example, applying tension in the + X-axis direction, each of the holding means is provided with a holding member for holding the adhesive thin plate 10, and each has a tension. The applying means preferably moves the holding member corresponding to the tension applying means in the + X-axis direction to apply tension to the adhesive sheet 10. In addition, it is desirable that the plural tension applying means is configured to independently move the holding means in the + X axis direction. In addition, it is preferable that the same configuration be applied to three groups including plural holding means and plural tension applying means provided for applying tension in the -X axis direction, + Y axis direction, and -Y axis direction, respectively. . Accordingly, the above-mentioned intervening device can apply different magnitudes of tension to the adhesive sheet 10 in each area in a direction orthogonal to each direction.
Generally, four holding members are used to hold the adhesive sheet 10 from four directions of + X-axis direction, -X-axis direction, + Y-axis direction, and -Y-axis direction, respectively. When extending in the four directions, the adhesive sheet 10 is adhered. In addition to the 4 directions, the combination direction (for example, the combination direction of + X axis direction and + Y axis direction, the combination direction of + Y axis direction and -X axis direction, -X axis direction and -Y axis) The combined direction of the directions and the combined direction of the -Y-axis direction and the + X-axis direction) are also given tension. As a result, the interval between semiconductor wafers in the inner region and the interval between semiconductor wafers in the outer region may be different from each other.
However, since the above-mentioned spacer device is in each of the + X-axis direction, the -X-axis direction, the + Y-axis direction, and the -Y-axis direction, a plurality of tension applying means can independently apply tension to the adhesive sheet 10, so The adhesive sheet 10 can be extended so that the difference between the inside and outside of the adhesive sheet 10 can be eliminated.
As a result, the interval between semiconductor wafers can be adjusted accurately.
FIG. 2 is a plan view illustrating the expansion device 100 as an example of a two-axis expandable expansion device (intermediate device). In FIG. 2, the X-axis and the Y-axis are orthogonal to each other. The positive direction of the X-axis is set to the + X-axis direction, the negative direction of the X-axis is set to the -X-axis direction, and the Y The positive direction of the axis is the + Y axis direction, and the negative direction of the Y axis is the -Y axis direction. The adhesive sheet 10 may be provided on the expansion device 100 so that each side becomes parallel to the X-axis or the Y-axis. As a result, the MD direction of the base material 11 to which the thin plate 10 is adhered becomes parallel to the X-axis or Y-axis. In addition, in FIG. 2, an adherend (semiconductor wafer) is omitted.
As shown in FIG. 2, the expansion device 100 includes five holding means 101 (20 holding means 101) in each of the + X-axis direction, the -X-axis direction, the + Y-axis direction, and the -Y-axis direction. . Among the five holding means 101 in each direction, the holding means 101A is located at both ends, the holding means 101C is located at the center, and the holding means 101B is located between the holding means 101A and 101C. Each side of the adhesive sheet 10 can be held by such holding means 101.
The expansion device 100 includes a plurality of tension applying means (not shown) corresponding to each of the holding means 101. By driving the tension applying means, each of the holding means 101 can be moved independently. The holding means 101 for holding five sides of the + X-axis direction side of the adhesive sheet 10 can move the predetermined time in the + X-axis direction at a first extension speed, for example. At the same time, among the five holding means 101, the holding means 101A and the holding means 101B can also be moved away from the holding means 101C (ie, the + Y-axis direction or the -Y-axis direction). At this time, the holding means 101A moves at a slower speed than the first extension speed (for example, a speed of 2/3 of the first extension speed), and the holding means 101B can make it move at a slower speed than the first extension speed (for example, Speed of 1/3 of the first extension speed). In addition, the holding means 101C may not move in the + Y-axis direction and the -Y-axis direction. The holding means 101 located on three sides other than the + X-axis direction of the adhesive sheet 10 can be performed in the same manner as the + X-axis direction: moving in various directions, and moving the holding means 101A and 101B away from the holding means 101C. Direction of movement.
It is preferable that the above-mentioned spacer device further includes a measuring means for measuring a distance between semiconductor wafers. Here, it is preferable that the said tension | tensile_strength providing means can move a plurality of holding members individually according to the measurement result of a measuring means. By providing the above-mentioned spacer device with a measuring means, the interval can be further adjusted based on the measurement result of the interval of the semiconductor wafer by the measuring means, and as a result, the interval of the semiconductor wafer can be adjusted more accurately.
In addition, as the holding means, the chuck means and the decompression means may be mentioned as the holding means. Examples of the chuck means include a mechanical chuck and a chuck cylinder. Examples of the pressure reduction means include a pressure reduction pump and a vacuum ejector. Further, in the above-mentioned intervening device, the holding means may be configured to support the adhesive sheet 10 with an adhesive, magnetic force, or the like. In addition, as the holding means of the chuck means, for example, a holding member having a structure including a lower supporting member, a driving device, and an upper supporting member, which supports the adhesive sheet 10 from below, and the driving device is supported by the lower portion. Component support. The upper support component is supported by the output shaft of the driving machine, and the adhesive sheet 10 can be pushed from above by driving the driving machine.
Examples of the driving device include an electric machine and an actuator. Examples of the electric machine include a rotary motor, a linear motor, a linear motor, a single-axis robot, and a multi-joint robot. Examples of the actuator include a pneumatic cylinder, a hydraulic cylinder, a rodless cylinder, and a rotary cylinder.
Further, in the above-mentioned spacer device, the tension applying means is provided with a driving device, and the holding member may be moved by the driving device. As the drive device provided in the tension applying means, a drive device similar to the drive device provided in the holding member described above can be used. For example, the means for applying tension may include a direct-acting motor as a driving device and an output shaft interposed between the direct-acting motor and the holding member, and the driven direct-acting motor may move the holding member via the output shaft. .
When using the adhesive sheet 10 of this embodiment to increase the interval between semiconductor wafers, the interval may be increased from a state where the semiconductor wafers are in contact with each other or a state where the interval between the semiconductor wafers is hardly enlarged, or from the semiconductor wafer The interval has been enlarged to a predetermined interval, and then the interval is enlarged.
When the interval is increased from a state where the semiconductor wafers are in contact with each other or a state where the interval between the semiconductor wafers is hardly widened, for example, after a plurality of semiconductor wafers are obtained by dividing a semiconductor wafer on a dicing sheet, the dicing sheet is rotated from A plurality of semiconductor wafers are printed to the adhesive sheet 10 of this embodiment, and then the interval between the semiconductor wafers can be increased. Alternatively, the semiconductor wafer may be divided on the adhesive sheet 10 of this embodiment to obtain a plurality of semiconductor wafers, and then the interval between the semiconductor wafers may be increased.
When the interval between semiconductor wafers has been enlarged to a predetermined interval, and then the interval is enlarged, another adhesive sheet is used. It is preferable that the adhesive sheet 10 of this embodiment is used to expand the interval between semiconductor wafers to a predetermined interval. After the interval, the semiconductor wafer is transferred from the adhesive sheet 10 to another adhesive sheet 10 of this embodiment, and then the interval of the semiconductor wafer can be enlarged by extending the adhesive sheet 10 of this embodiment. In addition, the transfer of the semiconductor wafer and the extension of the adhesive sheet can be repeated a plurality of times until the distance to the semiconductor wafer becomes a desired distance.

[Manufacturing method of semiconductor device]
The method for manufacturing a semiconductor device according to this embodiment is preferably an expansion method including the use of the adhesive sheet 10 according to this embodiment.
The method of manufacturing a semiconductor device according to this embodiment includes a process of cutting a workpiece (semiconductor wafer) adhered to a dicing sheet, and obtaining a plurality of pieces (semiconductor wafers) that are singulated (cutting process). ) Is ideal. It is preferable that the dicing adhesive sheet contains swellable fine particles.
In the sticking process of the method for manufacturing a semiconductor device according to this embodiment, the first adhesive layer of the sticky sheet 10 is stuck on the surface of the plurality of adherends (semiconductor wafers) opposite to the surface in contact with the sticking sheet for dicing. 12 or the second adhesive layer 13 is preferable.
In the method of manufacturing a semiconductor device according to this embodiment, it is preferable to perform a process of separating an adhesive thin plate for dicing and a plurality of adherends (semiconductor wafers) after the adhesion process. When the dicing adhesive sheet is expandable microparticles, it is preferable to expand the swellable microparticles to separate a plurality of adherends (semiconductor wafers) and the dicing adhesive sheet adhered to the adhesive sheet 10.
In the method of manufacturing a semiconductor device according to this embodiment, it is preferable to perform an expansion process after separating the dicing adhesive sheet and a plurality of adherends (semiconductor wafers).
The method for manufacturing a semiconductor device according to this embodiment includes a process (transfer process) of transferring a plurality of adherends (semiconductor wafers) to a second adhesive sheet having a second base material and a third adhesive layer. As ideal. It is desirable that the second adhesive sheet contains expandable particles.
In the method of manufacturing a semiconductor device according to this embodiment, a second adhesive is adhered to a surface of the plurality of adherends (semiconductor wafers) opposite to a surface in contact with the first adhesive layer 12 or the second adhesive layer 13. The third adhesive layer of the thin plate preferably separates a plurality of adherends (semiconductor wafers) adhered to the second adhesive thin plate from the adhesive thin plate 10. When the second adhesive sheet includes expandable particles, it is preferable to expand the expandable particles to separate a plurality of adherends (semiconductor wafers) from the second adhesive sheet.
In addition, the adhesive sheet 10 of this embodiment is preferably used for applications requiring a relatively large distance between semiconductor wafers. As an example of such applications, a fan-out type semiconductor wafer-level package (FO-WLP) may be used. Manufacturing method. As an example of a method of manufacturing such a FO-WLP, a first embodiment described below can be mentioned.

(First Form)
Hereinafter, a first embodiment of a method for manufacturing an FO-WLP using the adhesive sheet 10 of this embodiment will be described.
FIG. 3A shows a semiconductor wafer W as a workpiece attached to the dicing adhesive sheet A as a dicing sheet.
The semiconductor wafer W has a circuit surface W1, and a circuit W2 is formed on the circuit surface W1. The dicing adhesive sheet A is attached to the back surface W3 of the semiconductor wafer W on the side opposite to the circuit surface W1. The dicing adhesive sheet A includes a substrate A1 and an adhesive layer A2. The adhesive layer A2 is laminated on the substrate A1.

[Cutting works]
FIG. 3B shows a state where a plurality of formed semiconductor wafers CP are held on the dicing adhesive sheet A after dicing of the semiconductor wafer W.
The semiconductor wafer W held on the dicing adhesive sheet A is diced to form a plurality of semiconductor wafers CP (sometimes referred to as a dicing process). The semiconductor wafer CP has a circuit surface W1 and a back surface W3 opposite to the circuit surface W1. A circuit W2 is formed on the circuit surface W1.
Cutting is a cutting method using a dicing saw or the like.
Dicing can also be performed by irradiating laser light onto the semiconductor wafer W instead of cutting. For example, the semiconductor wafer W may be completely cut off by irradiation with laser light, and the individual wafers may be formed into a plurality of semiconductor wafers.
Alternatively, after the reforming layer is formed inside the semiconductor wafer W by laser light irradiation, the semiconductor wafer may be broken at the position of the reforming layer by extending the adhesive sheet in an expansion process described later. Each chip is converted into a semiconductor wafer CP. The method of forming such a wafer into a semiconductor wafer is sometimes called stealth dicing. During the stealth dicing, the laser light is irradiated with laser light in an infrared region so as to be focused on a focal point set inside the semiconductor wafer W, for example. In these methods, the laser light may be irradiated from either side of the semiconductor wafer W.
After the dicing, the plurality of semiconductor wafers CP are preferably transferred to the expansion sheet together.
It is preferable that the dicing adhesive sheet A contains swellable fine particles. In this case, it is preferable that at least one of the substrate A1 and the adhesive layer A2 contains swellable fine particles. The swellable fine particles are not particularly limited, as long as they are swelled by external stimuli to form unevenness on the surface of the adhesive layer, and the adhesion to the adherend (semiconductor wafer) may be reduced. Examples of the expandable microparticles include thermally expandable microparticles that expand by heating, and energy ray expandable microparticles that expand by energy beam irradiation. From the viewpoint of versatility and handling, it is desirable that the expandable fine particles are thermally expandable fine particles.
By expanding the expandable microparticles contained in the dicing adhesive sheet A, unevenness is formed on the adhesive surface of the adhesive layer A2, so that the contact area between the adhesive surface of the adhesive layer A2 and the semiconductor wafer CP is reduced, and the adhesive force can be increased. Greatly reduced. As a result, when the dicing adhesive sheet A is separated from the semiconductor wafer CP, there is no residual paste or the like on the semiconductor wafer CP, the semiconductor wafer CP is kept clean, and the semiconductor wafer CP can be easily separated from the dicing adhesive sheet A at a time. .

[First transfer process]
FIG. 3C is a diagram illustrating a process of transferring a plurality of semiconductor wafers CP to the adhesive sheet 10 of this embodiment after the dicing process. This process is sometimes called a "transfer process", and in order to distinguish it from other transfer processes, it is sometimes called a "first transfer process."

(First Adhesive Project)
The first transfer process includes: adhering the first adhesive layer 12 of the adhesive sheet 10 to the surface (circuit surface W1) on the opposite side of the surface (back surface W3) of the plurality of semiconductor wafers CP that is in contact with the adhesive sheet A for dicing, or Engineering of the second adhesive layer 13. This process is sometimes referred to as "adhesion process", and in order to distinguish it from other adhesion processes, it is sometimes referred to as "first adhesion process".
In the first aspect, the first adhesive layer 12 is attached to the circuit surface W1 of the plurality of semiconductor wafers CP. The adhesive sheet 10 is preferably adhered so that the first adhesive layer 12 covers the circuit surface W1.
The adhesive sheet 10 may be attached to a ring frame together with a plurality of semiconductor wafers CP. In this case, a ring frame is placed on the first adhesive layer 12 to which the thin plate 10 is adhered, and the ring frame is gently pushed and fixed. Thereafter, the first adhesive layer 12 exposed on the inside of the ring shape of the ring frame is pushed onto the circuit surface W1 of the semiconductor wafer CP, and a plurality of semiconductor wafers CP are fixed to the adhesive sheet 10.

(First separation project)
The first transfer process further includes a process of separating the dicing adhesive sheet A from the plurality of semiconductor wafers CP after the aforementioned adhesion process. This process is sometimes called a "separation process", and to distinguish it from other separation processes, it is sometimes called a "first separation process."
Once the adhesive sheet 10 is attached, the dicing adhesive sheet A is separated from the plurality of semiconductor wafers CP, and the back surface W3 of the plurality of semiconductor wafers CP is exposed.
FIG. 4A shows the plurality of semiconductor wafers CP and the adhesive sheet 10 after the dicing adhesive sheet A is separated.
When the dicing adhesive sheet A is expandable microparticles, it is preferable that the expandable microparticles are expanded to separate the plurality of semiconductor wafers CP and the dicing adhesive sheet A that are adhered to the adhesive sheet 10. By expanding the expandable microparticles contained in the dicing adhesive sheet A, unevenness is formed on the adhesive surface of the adhesive layer A2, so that the contact area between the adhesive surface of the adhesive layer A2 and the semiconductor wafer CP is reduced, and the adhesive force can be increased. Greatly reduced. As a result, there is no residual paste or the like, the cleanness of the semiconductor wafer CP is maintained, and the semiconductor wafer CP can be easily separated from the dicing adhesive sheet A at a time.
In the first aspect, since the first adhesive layer 12 and the second adhesive layer 13 of the adhesive sheet 10 contain an energy ray-curable adhesive, the expandable microparticles contained in the dicing adhesive sheet A are preferably thermally expandable microparticles. .

[Expansion Project]
FIG. 4B is a diagram illustrating a process of stretching the adhesive sheet 10 holding the plurality of semiconductor wafers CP. This project is sometimes referred to as the "expansion project". In order to distinguish it from other expansion projects, it is sometimes referred to as the "first expansion project." In this embodiment, the adhesive sheet 10 can be used as an expanded sheet. In the expansion process, the adhesive sheet 10 is stretched to increase the interval between the plurality of semiconductor wafers CP. In addition, during the invisible cutting of the cutting process, by lengthening the adhesive sheet 10, the semiconductor wafer is broken at the position of the reforming layer, and a plurality of semiconductor wafers CP are formed into pieces, and the interval between the plurality of semiconductor wafers CP can be enlarged .
The method of stretching the adhesive sheet 10 in the expansion process is not particularly limited. As a method of extending the adhesive sheet 10, for example, a method of extending the adhesive sheet 10 by a ring-shaped or circular expander, and a method of grasping the outer peripheral portion of the adhesive sheet 10 by using a holding member or the like and extending the adhesive sheet 10 Wait. As the latter method, for example, a two-axis extension method using the aforementioned spacer device or the like can be mentioned. Among these methods, a two-axis extension method is preferable from the viewpoint that the interval between the semiconductor wafers CP can be further increased.
As shown in FIG. 4B, the distance between the expanded semiconductor wafers CP is D1. Since the distance D1 is based on the size of the semiconductor wafer CP, it is not particularly limited. The distance D1 is desirably independently set to, for example, 200 μm or more and 6000 μm or less.

[Energy Ray Project]
After the expansion process, an operation is performed in which the adhesive sheet 10 is irradiated with energy rays to harden the first adhesive layer 12 and the second adhesive layer 13. This process is sometimes called the "energy ray irradiation process".
When the first adhesive layer 12 and the second adhesive layer 13 are ultraviolet curable, in the energy ray irradiation process, the adhesive sheet 10 is irradiated with ultraviolet rays. After the expansion process, the first adhesive layer 12 and the second adhesive layer 13 are hardened, thereby improving the shape retention of the extended adhesive sheet 10. As a result, the alignment of the plurality of semiconductor wafers CP adhered to the first adhesive layer 12 and the second adhesive layer 13 can be easily maintained.

[Second transfer process]
FIG. 5A is a diagram illustrating a process of transferring a plurality of semiconductor wafers CP to the second adhesive sheet 20 after the expansion process and the energy ray irradiation process. This process may be referred to as a "transfer process", and may be sometimes referred to as a "second transfer process" in order to distinguish it from other transfer processes.
The second transfer process is the same as the first transfer process, and includes a process of attaching the second adhesive sheet 20 to the plurality of semiconductor wafers CP (second attach process) and a separation process of separating the adhesive sheet 10 ( Second separation project).

(Second Adhesive Project)
In the second adhesion process, the third adhesive layer 22 of the second adhesive sheet 20 is attached to the back surface W3 of the plurality of semiconductor wafers CP.
After the expansion process and the energy ray irradiation process, the plurality of semiconductor wafers CP are attached to the circuit surface W1 toward the first adhesive layer 12. Therefore, the third adhesive layer 22 of the second adhesive sheet 20 is adhered to the back surface W3 on the side opposite to the circuit surface W1. It is desirable that the second adhesive thin plate 20 be adhered to the back surface W3 of the semiconductor wafer CP while maintaining the interval between the plurality of semiconductor wafers CP after the expansion process.
The second adhesive sheet 20 is not particularly limited as long as it can hold a plurality of semiconductor wafers CP. In the first aspect, a second adhesive sheet 20 having a second substrate 21 and a third adhesive layer 22 is used.
The second adhesive sheet 20 is the same as the adhesive sheet A for cutting, and preferably contains expandable fine particles. In this case, it is desirable that at least one of the second base material 21 and the third adhesive layer 22 contains swellable fine particles.
By expanding the expandable fine particles contained in the second adhesive sheet 20, unevenness is formed on the adhesive surface of the third adhesive layer 22, thereby reducing the contact area between the adhesive surface of the third adhesive layer 22 and the semiconductor wafer CP, Can greatly reduce the adhesion. As a result, even when the second adhesive sheet 20 is separated from the semiconductor wafer CP, there is no residual paste or the like on the semiconductor wafer CP, the semiconductor wafer CP is maintained clean, and the semiconductor wafer CP can be easily separated from the second adhesive sheet 20 at a time .
The second adhesive sheet 20 may be attached to the second ring frame together with the plurality of semiconductor wafers CP. In this case, a second ring frame is placed on the third adhesive layer 22 of the second adhesive sheet 20, and it is gently pressed and fixed. Thereafter, the third adhesive layer 22 exposed inside the ring shape of the second ring frame is pushed onto the back surface W3 of the semiconductor wafer CP, and a plurality of semiconductor wafers CP are fixed to the second adhesive sheet 20.

(Second Separation Project)
The second transfer process is a process of separating the adhesive sheet 10 after attaching the second adhesive sheet 20 to the plurality of semiconductor wafers CP.
FIG. 5B shows the plurality of semiconductor wafers CP and the second adhesive sheet 20 after the adhesive sheet 10 is separated.
When the adhesive sheet 10 is separated, the circuit surface W1 of the plurality of semiconductor wafers CP is exposed. Since the first adhesive layer 12 is hardened after the expansion process, the adhesive force of the first adhesive layer 12 is reduced, and the adhesive sheet 10 is easily peeled from the semiconductor wafer CP.
Even after the adhesive sheet 10 is peeled off, the distance D1 between the plurality of expanded semiconductor wafers CP is preferably maintained in the expansion process.

[Third transfer process]
FIG. 5C is a diagram illustrating a process of transferring a plurality of semiconductor wafers CP adhered to the second adhesive sheet 20 to the third adhesive sheet 30. This process is sometimes referred to as "transfer process", and in order to distinguish it from other transfer processes, it is sometimes referred to as "third transfer process."
The third transfer process is the same as the second transfer process, and includes a process of attaching the third adhesive sheet 30 to a plurality of semiconductor wafers CP (third attach process) and a process of separating the second adhesive sheet 20. (Third separation project).
The plurality of semiconductor wafers CP transferred from the second adhesive sheet 20 to the third adhesive sheet 30 are preferably maintained at a distance D1.

(Third Post Project)
In the third adhesion process, the fourth adhesive layer 32 of the third adhesive sheet 30 is attached to the circuit surface W1 of the plurality of semiconductor wafers CP.
The third adhesive thin plate 30 is preferably attached to the circuit surface W1 of the semiconductor wafer CP while maintaining the interval between the plurality of semiconductor wafers CP after the expansion process.
The third adhesive sheet 30 is not particularly limited as long as it can hold a plurality of semiconductor wafers CP. The third adhesive sheet 30 includes a third substrate 31 and a fourth adhesive layer 32.
The third adhesive sheet 30 may contain expandable fine particles similarly to the adhesive sheet A for cutting.
By expanding the expandable fine particles contained in the third adhesive sheet 30, unevenness is formed on the adhesive surface of the fourth adhesive layer 32, thereby reducing the contact area between the adhesive surface of the fourth adhesive layer 32 and the semiconductor wafer CP. Can greatly reduce the adhesion. As a result, when the third adhesive sheet 30 is separated from the sealing body formed by the sealing process described later, there is no residue of paste on the semiconductor wafer CP, and the cleanness of the semiconductor wafer CP can be maintained, and the third adhesive sheet 30 can be maintained. The semiconductor wafer CP is separated.
Expandable particles (third expandable particles) contained in the third adhesive sheet 30, expandable particles (first expandable particles) contained in the cutting adhesive sheet A, and expandable particles contained in the second adhesive sheet 20 The (second swellable fine particles) may be the same as or different from each other.

(Third Separation Project)
In the third separation process after the third adhesion process, the second adhesive sheet 20 is separated from the plurality of semiconductor wafers CP. When at least one of the second base material 21 and the third adhesive layer 22 of the second adhesive sheet 20 contains swellable fine particles, the swellable fine particles are expanded to form irregularities on the surface of the third adhesive layer 22. The second adhesive sheet 20 is easily peeled from the semiconductor wafer CP.
When both the second adhesive sheet 20 and the third adhesive sheet 30 contain swellable particles expanded by the same external stimulus, when the second adhesive sheet 20 is separated, the fourth adhesive layer 32 of the third adhesive sheet 30 is used. In a manner that the adhesive force of the second adhesive sheet 20 and the third adhesive layer 22 of the second adhesive sheet 20 is greater, it is desirable to select the type of the second adhesive sheet 20 and the third adhesive sheet 30 and the peeling method.
It is desirable that the mechanism for reducing the adhesion of the second adhesive sheet 20 is different from the mechanism for reducing the adhesion of the third adhesive sheet 30. For example, in the case where the adhesion force of the second adhesive sheet 20 is reduced by heat, and the adhesion force of the third adhesive sheet 30 is decreased by ultraviolet rays, it is desirable to select a substrate and an adhesive layer.
When it is desired to seal the plurality of semiconductor wafers CP on the third adhesive sheet 30, it is preferable to use an adhesive sheet for sealing process as the third adhesive sheet 30, and it is more preferable to use an adhesive sheet having heat resistance.
When an adhesive sheet having heat resistance is used as the third adhesive sheet 30, the third base material 31 and the fourth adhesive layer 32 are each formed of a material having heat resistance that can withstand the temperature applied during the sealing process. As ideal. As another form of the third adhesive sheet 30, an adhesive sheet having a third base material, a third adhesive layer, and a fourth adhesive layer may be mentioned. The adhesive sheet includes a third substrate between the third adhesive layer and the fourth adhesive layer, and has adhesive layers on both sides of the third substrate.
The plurality of semiconductor wafers CP transferred from the second adhesive sheet 20 to the third adhesive sheet 30 are adhered with the circuit surface W1 toward the fourth adhesive layer 32.

[Sealing Engineering]
FIG. 5D is a diagram showing a process of sealing a plurality of semiconductor wafers CP using the sealing member 60. This process is sometimes called "sealing process."
In this embodiment, the sealing process is performed after the plurality of semiconductor wafers CP are transferred to the third adhesive sheet 30 and the second adhesive sheet 20 is separated.
In the sealing process, the plurality of semiconductor wafers CP are covered with the sealing member 60 in a state where the circuit surface W1 is protected by the third adhesive sheet 30, thereby forming the sealing body 3. A sealing member 60 is also filled between the plurality of semiconductor wafers CP. Here, since the circuit surface W1 and the circuit W2 are covered by the third adhesive sheet 30, the circuit surface W1 can be prevented from being covered with the sealing member 60.
By the sealing process, a plurality of semiconductor wafers CP which can be obtained at predetermined distances are buried in the sealing body 3 of the sealing member 60. In the sealing process, the plurality of semiconductor wafers CP are preferably covered with the sealing member 60 in a state where the distance D1 after the expansion process is performed is maintained.
After the sealing process, a separation process of separating the third adhesive sheet 30 from the sealing body 3 is performed. This project is sometimes referred to as the fourth separation project.
When the third adhesive sheet 30 is separated, the circuit surface W1 of the semiconductor wafer CP and the surface 3A in contact with the third adhesive sheet 30 of the sealing body 3 are exposed.
After the expansion process, by repeating the transfer process and the expansion process any number of times, the distance between the semiconductor wafers CP can be set as a desired distance, and the direction of the circuit surface when the semiconductor wafer CP is sealed can be set as a desired direction.

[Rewiring layer formation process and connection process]
After the third adhesive sheet 30 is peeled from the sealing body 3, the sealing body 3 is sequentially subjected to: a redistribution layer forming process for forming a redistribution layer electrically connected to the semiconductor wafer CP; and electrically connecting the redistribution layer to the outside Terminal electrode connection works. The circuit of the semiconductor wafer CP and the external terminal electrode are electrically connected by a redistribution layer formation process and a connection process with the external terminal electrode.

[A piece project]
The sealing body 3 connected to the external terminal electrode is divided into individual pieces in units of a semiconductor wafer CP. The method of forming the sealing body 3 into individual pieces is not particularly limited. By singulating the sealing body 3, a semiconductor package of a semiconductor wafer CP unit is manufactured. A semiconductor package that connects an external electrode that is fan-out to a region outside the semiconductor wafer CP is manufactured as a fan-out type wafer-level package (FO-WLP).

[Installation work]
In the present embodiment, it may be desirable to include a process of mounting a single-piece semiconductor package on a printed wiring board or the like.
The adhesive sheet 10 of this embodiment has a shape that is easy to maintain the expanded state of the expansion process. Therefore, it can be applied to the use which needs to widen the space | interval of a plurality of semiconductor wafers as mentioned above, and maintains the expanded state of a thin plate.

[Modification of embodiment]
The invention is not limited to the embodiments described above. The present invention encompasses a range in which the objects of the present invention can be achieved, and the above-described embodiments are modified.
The manufacturing method of the FO-WLP according to the first aspect described above may be a part of the process or a part of the process may be omitted.
The semiconductor wafer or the circuit and the like of the semiconductor wafer are not limited to the arrangement or shape shown in the figure. The connection structure and the like to the external terminal electrodes of the semiconductor package are not limited to those described in the foregoing embodiments. In the foregoing embodiment, the embodiment in which a FO-WLP type semiconductor package is manufactured is described as an example, but the present invention is also applicable to a mode in which other semiconductor packages such as a fan-in type WLP are manufactured.
In the aforementioned embodiment, a mode in which a plurality of adherends (semiconductor wafers CP) are attached to the first adhesive layer 12 is described as an example, but the present invention is not limited to such a mode. For example, a form in which a plurality of adherends (semiconductor wafers CP) are adhered to the second adhesive layer 13 may be used.
In the aforementioned embodiment, an example in which an adherent layer (semiconductor wafer CP) is adhered to the adhesive layer on the upper side of the adhesive sheet 10 and energy rays (ultraviolet rays) are irradiated from the lower side of the adhesive sheet 10 will be described as an example. However, the present invention is not limited to such a form. For example, a form in which an adherend (semiconductor wafer CP) is adhered to the adhesive layer on the lower surface side of the adhesive sheet 10 and energy rays (ultraviolet rays) are radiated from the upper surface of the adhesive sheet 10 may be used.
The adhesive sheet is not limited to the form described in the above embodiment. As another form of the adhesive sheet of the present invention, in the adhesive sheet, it is preferable that the coating layer is laminated on either of the first adhesive layer and the second adhesive layer. The adherend (semiconductor wafer, etc.) is adhered to an adhesive layer on which a coating layer is not laminated.
FIG. 6 shows an adhesive sheet 10A having a coating layer 14.
The material of the coating layer 14 is preferably a composition containing, for example, an energy ray-curable resin and an inorganic filler. The energy ray-curable resin is, for example, the aforementioned energy ray-curable resin (a1). The inorganic filler is, for example, a powder of silica, alumina, talc, calcium carbonate, titanium white, red white, silicon carbide, boron nitride, or any of these powders. Spherical beads, single crystal fibers, glass fibers, and the like.
The thickness of the coating layer 14 is preferably 0.5 μm or more and 5 μm or less.
In the method for manufacturing a semiconductor device according to the foregoing embodiment, when the distance D1 between the plurality of semiconductor wafers CP is to be further expanded after the expansion process, the adhesive sheet 10 may be peeled off and then the second adhesive sheet 20 may be stretched. (Hereinafter sometimes referred to as the "second expansion project"). When the second expansion process is performed, it is desirable to use an expansion sheet as the second adhesive sheet 20. The expansion sheet is preferably an adhesive sheet (first adhesive sheet) of the aforementioned embodiment.
The second expansion process is to further expand the interval between the plurality of semiconductor wafers CP. The method of stretching the second adhesive sheet 20 in the second expansion process is not particularly limited. For example, the second expansion project is also implemented in the same manner as the first expansion project.
In addition, the interval between the semiconductor wafers CP after the second expansion process is D2. The distance D2 is based on the size of the semiconductor wafer CP, and although not particularly limited, the distance D2 is larger than the distance D1. The distance D2 is preferably, for example, 200 μm or more and 6000 μm or less.

3‧‧‧Sealed body

3A‧‧‧face

10‧‧‧ Adhesive sheet

11‧‧‧ Substrate

11A‧‧‧First substrate surface

11B‧‧‧Second substrate surface

12‧‧‧ the first adhesive layer

13‧‧‧Second adhesive layer

14‧‧‧ Coating

20‧‧‧Second Adhesive Sheet

22‧‧‧Third adhesive layer

30‧‧‧ Third adhesive sheet

31‧‧‧ third substrate

32‧‧‧Fourth adhesive layer

60‧‧‧Sealing member

100‧‧‧ Expansion device

101A‧‧‧ Means of retention

101B‧‧‧ Means of retention

101C‧‧‧ Means of retention

W‧‧‧Semiconductor wafer

W1‧‧‧Circuit Surface

W2‧‧‧Circuit

W3‧‧‧ back

A‧‧‧ Adhesive sheet for cutting

A1‧‧‧ substrate

A2‧‧‧Adhesive layer

CP‧‧‧Semiconductor wafer

D1‧‧‧distance

FIG. 1 is a schematic cross-sectional view of an adhesive sheet according to an embodiment of the present invention.

FIG. 2 is a plan view illustrating a two-axis extension and expansion device.

3A is a cross-sectional view of a first embodiment illustrating a method of using an adhesive sheet according to an embodiment of the present invention.

FIG. 3B is a cross-sectional view of a first embodiment illustrating a method of using an adhesive sheet according to an embodiment of the present invention. FIG.

FIG. 3C is a cross-sectional view of a first embodiment illustrating a method of using an adhesive sheet according to an embodiment of the present invention. FIG.

FIG. 4A is a cross-sectional view of a first embodiment illustrating a method of using an adhesive sheet according to an embodiment of the present invention. FIG.

FIG. 4B is a cross-sectional view of a first embodiment illustrating a method of using an adhesive sheet according to an embodiment of the present invention. FIG.

5A is a cross-sectional view of a first embodiment illustrating a method of using an adhesive sheet according to an embodiment of the present invention.

FIG. 5B is a cross-sectional view of a first embodiment illustrating a method of using an adhesive sheet according to an embodiment of the present invention. FIG.

FIG. 5C is a cross-sectional view of a first embodiment illustrating a method of using an adhesive sheet according to an embodiment of the present invention. FIG.

FIG. 5D is a cross-sectional view of a first embodiment illustrating a method of using an adhesive sheet according to an embodiment of the present invention. FIG.

FIG. 6 is a schematic cross-sectional view of a modified adhesive sheet according to an embodiment of the present invention.

Claims (14)

An expansion method, characterized by: Adhesive engineering is a method in which a plurality of adherends are adhered to the first adhesive layer or the second adhesive layer to which a sheet is adhered. The adhesive sheet has a first adhesive containing a first energy ray-curable resin A layer, a second adhesive layer containing a second energy ray-curable resin, and a substrate between the first adhesive layer and the second adhesive layer; An expansion project which expands the aforementioned adhesive sheet to increase the interval between the plurality of adherends; and The energy ray irradiation project involves irradiating the first adhesive layer and the second adhesive layer with energy rays to harden the first adhesive layer and the second adhesive layer. For example, the expansion method of the first scope of the patent application, wherein the first energy ray curable resin and the second energy ray curable resin are the same. For example, the expansion method of the first or second scope of the patent application, wherein the composition of the first adhesive layer and the composition of the second adhesive layer are the same. For example, the expansion method of the first or second scope of the patent application, wherein the thickness of the first adhesive layer and the thickness of the second adhesive layer are the same. For example, the method for expanding the scope of patent application No. 1 or 2, in which, In the above-mentioned adhesion process, the plurality of adherends are adhered to the first adhesive layer, In the aforementioned energy ray irradiation process, energy rays are irradiated from the side of the second adhesive layer to harden the first adhesive layer and the second adhesive layer. For example, the method for expanding the scope of the patent application item 1 or 2, wherein the aforementioned adherend is a semiconductor wafer. A method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device including the expansion method described in any one of claims 1 to 6, and is characterized by: Including the process of cutting the workpiece adhered to the adhesive thin plate for cutting to obtain a plurality of pieces of the workpiece, In the above-mentioned adhesion process, the first adhesive layer or the second adhesive layer of the adhesive sheet is adhered to a surface of the plurality of adherends on a side opposite to a surface contacting the adhesive sheet for cutting, After the adhesion process, a process of separating the cutting adhesive sheet and the plurality of adherends is performed. For example, the method for manufacturing a semiconductor device according to the seventh aspect of the present invention, wherein the expansion process is performed after separating the adhesive sheet for cutting and the plurality of adherends. For example, the method for manufacturing a semiconductor device according to the seventh or eighth aspect of the patent application, wherein the dicing adhesive sheet includes expandable fine particles, In the process of separating the cutting adhesive sheet and the plurality of adherends, the expandable microparticles are expanded to separate the plurality of adherends and the cutting adhesive sheet adhered to the adhesive sheet. For example, a method for manufacturing a semiconductor device according to claim 7 or 8, which includes: A second transfer process, which is after the aforementioned expansion process, transferring the plurality of adherends to a second adhesive sheet having a second substrate and a third adhesive layer; and The third transfer process is to transfer the plurality of adherends adhered to the second adhesive sheet to a third adhesive sheet having a third substrate and a fourth adhesive layer. The third adhesive sheet includes expandable particles, In the second transfer process, the third adhesion of the second adhesive sheet is adhered to a surface of the plurality of adherends on a side opposite to a surface in contact with the first adhesive layer or the second adhesive layer. The agent layer separates the adhesive sheet from the plurality of adherends, In the third transfer process, the fourth adhesive layer of the third adhesive sheet is affixed to the surface of the plurality of adherends on the side opposite to the surface in contact with the third adhesive layer, from the plurality of The adherend separates the second adhesive sheet. An adhesive sheet with the following features: A first adhesive layer containing a first energy ray-curable resin; A second adhesive layer containing a second energy ray-curable resin; and A substrate between the first adhesive layer and the second adhesive layer, Expansion methods used in the following projects: Adhesive engineering, in which the first adhesive layer or the second adhesive layer of the adhesive sheet is attached to a plurality of adherends; An expansion project which expands the aforementioned adhesive sheet to increase the interval between the plurality of adherends; and The energy ray irradiation process involves irradiating the first adhesive layer and the second adhesive layer with energy rays to harden the first adhesive layer and the second adhesive layer. For example, the adhesive sheet according to item 11 of the application, wherein the first energy ray curable resin and the second energy ray curable resin are the same. For example, for the adhesive sheet in the scope of the patent application No. 11 or 12, the composition of the first adhesive layer and the composition of the second adhesive layer are the same. For example, the thickness of the first adhesive layer is the same as the thickness of the second adhesive layer.