TW202118115A - μLED DISPLAY PANEL WITH A BLACK MATRIX ANTI-DISPERSION LAYER AND THE MANUFACTURING METHOD - Google Patents

Abstract

A micro light-emitting-diode display panel with a black matrix anti-dispersion layer and a manufacturing method thereof, comprising: a substrate; an electrode layer having a plurality of electrodes formed on the substrate, defining a plurality of pixels; a plurality of micro-lights a diode, which is adhered to the electrode; and a black matrix anti-dispersion layer formed by a black negative photoresist formed between the gaps of the micro-light emitting diodes, the black matrix anti-dispersion layer forming a plurality of pixels space to define the pixels.

Description

Micro-luminescence diode display panel with black matrix anti-scattering layer and manufacturing method thereof

The present invention relates to a micro-light-emitting diode technology, in particular to a micro-light-emitting diode display panel with a black matrix anti-scattering layer and a manufacturing method thereof.

Micro Light Emitting Diode Display (μLED) is a new generation display that uses micro light emitting diodes as the light emitting element of the display. This technology is to thin, miniaturize, and array the LEDs to a single LED size of only 1~10μm, and then transfer the μLEDs to the circuit board in batches, and after surface adhesion, the electrodes and transistors on the circuit board , The upper electrode, the protective layer, etc., together constitute the μLED panel required by the micro-light-emitting diode display.

μLED has many excellent characteristics such as self-luminescence, low power consumption, fast response time, high brightness, ultra-high contrast, wide color gamut, wide viewing angle, ultra-light and thin, long service life and adapting to various operating temperatures. The technical specifications of μLED are compared with LCD and OLED have overwhelming advantages.

However, after the micro LEDs are massively transferred and attached to the electrode-containing substrate 10, there will be lateral light and dispersion problems during the light emission of individual dies. Both of these conditions may cause unclear pixels. , Contrast reduction and other issues. As shown in Figures 1A and 1B, they are Xi The top view and the cross-sectional schematic diagram along the A-A section line of the known technology μLED after the massive transfer of the die. It can be found that the μLED die 30-n-1 is under the control of the electrode 20-n-1 (the remaining electrodes 20-n-2, 20-n-3, 20-n-4, 20-n-5, There is a μLED die above 20-n-6, etc.) to emit light, part of the emitted light is upward to form light 90-1, and part of it forms lateral leakage light 90-2 and is reflected to the nearby μLED die 30 The position of -n-2, in turn, interferes with the light source generated by the μLED die 30-n-2 next to it, thereby affecting its performance. Conversely, the μLED die 30-n-1 will also be affected by the side light and reflected light of the μLED die 30-n-2 next to it. This kind of side light problem will exist in all μLED dies 30-n-1, 30-n-2, 30-n-3, 30-n-4, 30-n-5, 30-n-6 on.

Therefore, how to properly prevent the μLED from reducing its lateral light and astigmatic light when emitting light, so as to improve the clarity and contrast of the μLED, has become an important research and development direction for the development of μLED technology.

In order to achieve the above objective, the present invention provides a micro-light-emitting diode display panel with a black matrix anti-scattering layer and a manufacturing method thereof. The black matrix layer between the μLEDs is fabricated by the exposure and development process, so as to accurately fabricate the black matrix layer between the μLEDs. The black matrix layer in the gap between the μLEDs solves the technical problems of the μLEDs, such as unclear pixels and reduced contrast due to light leakage and reflection, and achieves special technical effects such as pixel definition and contrast.

The object of the present invention is to provide a micro-light-emitting diode display panel with a black matrix anti-scattering layer, including: a micro-light-emitting diode display panel with a black matrix anti-scattering layer and a manufacturing method thereof, including: 1. A substrate; an electrode layer with a plurality of electrodes formed on the substrate to define a plurality of pixels; a plurality of micro-light emitting diodes, which are individually adhered to the electrodes; and a black matrix The anti-scattering layer is formed with a black negative photoresist in the space between the light-emitting diodes.

The present invention also provides a method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer, which includes: forming a negative photoresist layer on a micro-light-emitting diode substrate that completes the massive transfer; The photomask exposes the negative photoresist layer, and the exposed position is the interval between a plurality of micro light emitting diodes in the micro light emitting diode substrate; the unexposed negative photoresist layer is removed, and the negative photoresist layer is removed. The exposed negative photoresist layer constitutes a black matrix structure; the black matrix structure is cured.

The present invention also provides a method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer, which includes: forming a negative photoresist layer on a substrate; and applying a mask to the negative photoresist layer Exposure, the exposed position is defined as the interval between a plurality of micro-light emitting diodes; the unexposed negative photoresist layer is removed, and the exposed negative photoresist layer forms a black matrix structure and forms a plurality of Pixel spaces, the size of the pixel spaces is slightly larger than the size of the micro light-emitting diode; curing the black matrix structure; fabricating the electrode layer in the pixel spaces; and transferring the micro light-emitting diode to the In some pixel space.

The present invention also provides a method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer, including: forming a negative photoresist layer on a substrate having electrode layers corresponding to a plurality of pixels. ; Expose the negative photoresist layer with a photomask, and the exposure position is defined as the interval between a plurality of micro-light emitting diodes; remove the negative photoresist layer that is not exposed, and the negative photoresist that is exposed The photoresist layer forms a black matrix structure and forms a plurality of pixel spaces, the size of the pixel spaces is slightly larger than the size of the micro-light-emitting diode; the black matrix structure is cured; and the micro-light-emitting diode is massively Transfer to these pixel spaces.

In order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, a few preferred embodiments are listed below in conjunction with the accompanying drawings, which are described in detail as follows (implementation method) formula).

10‧‧‧Substrate

20-n-2, 20-n-3, 20-n-4, 20-n-5, 20-n-6‧‧‧ electrode

30-n-1, 30-n-2, 30-n-3, 30-n-4, 30-n-5, 30-n-6‧‧‧μLED die

40-1, 40-2, 50-1, 50-2‧‧‧Negative photoresist layer

40-n-1, 40-n-2, 40-n-3, 40-n-4, 40-n-5, 40-n-6‧‧‧Negative photoresist layer

50-1’、50-2’‧‧‧Negative photoresist layer

50-n-1, 50-n-2, 50-n-3, 50-n-4, 50-n-5, 50-n-6‧‧‧Negative photoresist layer

60-n-1, 60-n-2, 60-n-3, 60-n-4, 60-n-5, 60-n-6‧‧‧Pixel space

90-1‧‧‧Light

90-2‧‧‧Side light leakage

Figures 1A and 1B are the top view and the cross-sectional schematic diagram along the A-A section line of the conventional μLED after the massive transfer of the die.

Figures 2A-2E are a flowchart of an embodiment of a method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer of the present invention, and a schematic cross-sectional view and top view of each manufacturing stage.

Figures 3A-3F are flowcharts of another embodiment of the method for fabricating a micro-light emitting diode display panel with a black matrix anti-scattering layer of the present invention, as well as cross-sectional schematic diagrams and top views of each fabrication stage.

Figures 4A-4F are flowcharts and schematic cross-sectional views of another embodiment of a method for manufacturing a micro-light emitting diode display panel with a black matrix anti-scattering layer according to the present invention.

Figures 5A-5G are flowcharts and schematic cross-sectional views of another embodiment of a method for manufacturing a micro-light emitting diode display panel with a black matrix anti-scattering layer of the present invention.

FIGS. 6A-6F are flowcharts of yet another embodiment of the method for fabricating a micro-light emitting diode display panel with a black matrix anti-scattering layer of the present invention and a schematic cross-sectional view of each fabrication stage.

Figures 7A-7G are flowcharts and schematic cross-sectional views of another embodiment of the method for manufacturing a micro-light emitting diode display panel with a black matrix anti-scattering layer of the present invention.

According to the embodiment of the present invention, the present invention uses the exposure and development process to fabricate the black matrix layer between the μLEDs, so as to accurately fabricate the black matrix that can fill the gaps between the μLEDs. Layer, and then solve the technical problems of μLEDs such as unclear pixels and reduced contrast due to light leakage and reflection, and then achieve special technical effects such as pixel sharpness and contrast.

Please refer to FIGS. 2A-2E at the same time, a flow chart of an embodiment of a method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer of the present invention, as well as a schematic cross-sectional view and a top view of each manufacturing stage. The manufacturing method of the micro light emitting diode display panel with the black matrix anti-scattering layer of the present invention includes:

Step S101: forming a negative photoresist layer on the micro-light-emitting diode substrate that has completed the mass transfer. The thickness of the negative-type photoresist layer is equivalent to the height of the micro-light-emitting diodes; the height of the micro-light-emitting diodes That includes the thickness of the micro light-emitting diode and the thickness of the electrode. As shown in Figures 2B and 2C (a schematic cross-sectional view along the section line AA), there are μLED dies 30-n-1, 30-n-2, 30-n on the micro-light-emitting diode substrate 10 that has completed the massive transfer. -3, 30-n-4, 30-n-5, 30-n-6 (as shown in Figure 1B), and the electrode layer below it has multiple electrodes 20-n-1, 20-n-2 , 20-n-3, 20-n-4, 20-n-5, 20-n-6 (which are made in the form of electrode pairs) are formed on the substrate 10, and these electrodes define the position of the pixel. The electrodes on the micro-light-emitting diode substrate 10 that has completed the massive transfer and the micro-light-emitting diode have completed the adhesion to each other, forming an electrical connection. In this step, since the photoresist layer will be subsequently produced as a permanent material layer, a negative photoresist is used for production, and different methods such as spraying or spin coating can be used to form it. Figure 2C is an ideal pattern, which differs from the actual pattern according to different coating methods; it can be seen that because the micro-light-emitting diode protrudes on the substrate 10, a μLED die 30 is formed. -The gaps between n-1, 30-n-2, 30-n-3, 30-n-4, 30-n-5, and 30-n-6 are filled with the negative photoresist layer 40-1, And the μLED die 30-n-1, 30-n-2, 30-n-3, 30-n-4, 30-n-5, 30-n-6 is also covered with a negative photoresist layer 40- 2 (Part to be removed). In addition, since the negative photoresist layer will be made into a black matrix structure, a negative photoresist material doped with black pigments can be selected.

Step S102: Expose the negative photoresist layer with a photomask, and the exposure position is the interval between the plurality of micro-light-emitting diodes in the micro-light-emitting diode substrate. This step is not drawn. Because of the negative photoresist that fills the gaps between the μLED dies 30-n-1, 30-n-2, 30-n-3, 30-n-4, 30-n-5, and 30-n-6 The layer 40-1 is the part of the permanent material that you want to retain, so it must be exposed with a corresponding photomask.

Step S103: Remove the unexposed negative photoresist layer, and the exposed negative photoresist layer constitutes a black matrix structure; this step is generally called a development step, because the selected photoresist material is a negative photoresist Therefore, the unexposed part can be removed by the developer, as shown in Figure 2D, and only the exposed negative photoresist layer 40-1 remains. The exposed part will remain as the black matrix structure reserved by the present invention.

Step S104: curing the black matrix structure; for example, the black matrix structure formed by the negative photoresist layer 40-1 is further cured into a permanent material layer through thermal curing or light curing, as shown in FIG. 2E.

The photoresist in the present invention uses a negative photoresist, but preferably, the photoresist layer of the present invention uses a high-resolution negative photoresist. The material of the photoresist layer is mainly composed of polymer resin (Resin), photo initiator (Photo initiator), monomer (Monomer), solvent (Solvent), and additives (Additives).

Among the materials of the photoresist layer, the function of polymer resin (Resin) lies in adhesion, developability, pigment dispersibility, fluidity, heat resistance, chemical resistance, and analytical ability; The function lies in the photosensitive characteristics and resolution; the function of the monomer is adhesion, developability, and resolution; the function of the solvent is viscosity and coating properties; the function of the additives is the coating and leveling Sex and foaming.

The polymer resin (Resin) can be a polymer or copolymer containing carboxylic acid group (COOH), such as acrylic resin, acrylic-epoxy resin, acrylic_melamine ( Melamine resin, acrylic-styrene (Styrene) resin, phenol-phenol (Phenolic Aldehyde) resin and other resins, or any combination of the above resins, but not limited to this. The weight percentage of the resin in the photoresist can range from 0.1% to 99%.

Monomers can be divided into water-insoluble monomers and water-soluble monomers. Among them, water-insoluble monomers can be penerythritol triacrylate, trimethyl ether propane triacrylate, and trimethyl ether propane. Trimethacrylate, tris, diethanol isocyanate triacrylate, di, trimethanol propane tetraacrylate, diisopentaerythritol pentaacrylate, pentaacrylate, isopentaerythritol tetraacetate; dihexanetetraacetate Alcohol, diisopentaerythritol hexaacetate, or multifunctional monomer, dendrimer/multiplex acrylate oligomer, polyether acrylate, urethane. Water-soluble monomers can be monomers of Ethoxylated (polyoxyethylene) (EO for short) base and Propoxylated (polyoxypropylene) (PO for short); for example: two-(two-) Oxyethylene oxyethylene) vinyl acrylic acid unitary, pentadecoxyethylene trimethanol propane triacrylate, triacontanoxyethylene di, two-bis-p-phenol methane diacrylate, thirty oxyethylene di, two-pair Phenol methane dimethacrylic acid unitary, eicosoxyethylene trimethanol propane triacrylate, pentaoxyethylene trimethanol propane triacrylate, methyloxy 550 oxyethylene monomethacrylate, two hundred oxygen Ethylene diacrylate, four hundred oxyethylene diacrylate unitary, four hundred oxyethylene dimethacrylate, six hundred oxyethylene diacrylate, six hundred oxyethylene dimethacrylate, polyoxypropylene monomethacrylate . Of course, two or more monomers can also be added and mixed to form a co-monomer. The weight percentage of monomer or comonomer in the photoresist can range from 0.1% to 99%.

Photo initiator, which can be selected from acetophenone compounds (acetophenone), benzophenone (Benzophenone)-based compound or diimidazole-based compound (bis_imidazole), benzoin-based compound (Benzoin), benzil-based compound (Benzil), α-amino ketone-based compound (α-amino ketone) ketone), acyl phosphine oxide (Acyl phosphine oxide), or benzoyl formate-based compound can be optionally mixed with the above photoinitiators, but not limited to this. The weight percentage of the photoinitiator in the photoresist can range from 0.1 to 10%.

Solvent can be ethylene glycol monopropylether, di-ethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol ethyl ether (ethyleneglycol monoethyl ether), di-ethylene glycol mono-methylether, di-ethylene glycol mono-ethyl ether, di-ethylene glycol mono-butyl ether -butyl ether), propylene glycol mono-methyl ether acetate, propylene glycol mono-ethyl ether acetate, propylene glycol mono-propyl ether acetate, 3 -Ethoxy propionate (ethyl3_ethoxy propionate), etc., or any combination of the above solvents, but not limited to this. The weight percentage of the solvent in the photoresist can range from 0.1% to 99%.

Additives are generally pigment dispersants, which are necessary ingredients for photoresists containing pigments. They are generally non-ionic interfacial active agents, such as Solsperse 39000 and Solsperse 21000. The weight percentage of this dispersant in the photoresist can range from up to 0.1 to 5%.

When performing exposure and development in steps S102 and S103 of the present invention, it further includes: (1) Substrate Clean; (2) Coating; (3) Pre-baking; (4) ) Exposure; (5) Processing steps such as developing.

Next, please refer to Figures 3A-3F, the microstructure of the present invention with a black matrix anti-scattering layer A flow chart of another embodiment of a method for manufacturing a light-emitting diode display panel and a schematic cross-sectional view and top view of each manufacturing stage, in which the micro-light-emitting diode display panel with a black matrix anti-scattering layer of the present invention is manufactured Methods include:

Step S111: forming a negative photoresist layer on the micro-light-emitting diode substrate that has completed the mass transfer, the thickness of the negative photoresist layer is less than the height of the micro-light-emitting diodes; and the thickness of the negative photoresist layer The thickness is less than 5um and greater than 1um; the thickness of the negative photoresist layer is the thickness of the black matrix anti-scattering layer of the present invention. As shown in Figures 3B and 3C (a schematic cross-sectional view along the AA section line), there are μLED dies 30-n-1, 30-n-2, 30-n on the micro-light-emitting diode substrate 10 that has completed the massive transfer. -3, 30-n-4, 30-n-5, 30-n-6 (as shown in Figure 1B), and the electrode layer below it has multiple electrodes 20-n-1, 20-n-2 , 20-n-3, 20-n-4, 20-n-5, 20-n-6 (which are made in the form of electrode pairs) are formed on the substrate 10, and these electrodes define the position of the pixel. The electrodes on the micro-light-emitting diode substrate 10 that has completed the massive transfer and the micro-light-emitting diode have completed the adhesion to each other, forming an electrical connection. In this step, since the photoresist layer will be subsequently produced as a permanent material layer, a negative photoresist is used for production, and different methods such as spraying or spin coating can be used to form it; since this embodiment is produced with a thickness less than micro The height of the light-emitting diode (including the thickness of the micro-light-emitting diode and the thickness of the electrode), therefore, spraying is preferred. Figure 3C is an ideal pattern, which differs from the actual pattern according to different coating methods; it can be seen that because the micro-light-emitting diode protrudes on the substrate 10, a μLED die 30 is formed. The gaps between -n-1, 30-n-2, 30-n-3, 30-n-4, 30-n-5, and 30-n-6 are filled with the negative photoresist layer 50-1, And the μLED die 30-n-1, 30-n-2, 30-n-3, 30-n-4, 30-n-5, 30-n-6 is also covered with a negative photoresist layer 50- 2 (Part to be removed). In addition, since the negative photoresist layer will be made into a black matrix structure, a negative photoresist material doped with black pigments can be selected.

Step S112: Expose the negative photoresist layer with a mask, and the exposed position is The space between a plurality of micro-light-emitting diodes in the micro-light-emitting diode substrate. This step is not drawn. Because of the negative photoresist that fills the gaps between the μLED dies 30-n-1, 30-n-2, 30-n-3, 30-n-4, 30-n-5, and 30-n-6 The layer 50-1 is the part of the permanent material that you want to retain, so it must be exposed with a corresponding photomask.

Step S113: Roughen the negative photoresist layer; since this embodiment uses the concept of black film photoresist to achieve the anti-side light leakage and reflection, the negative photoresist layer 50-1 is roughened to After the negative photoresist layer 50-1', the negative photoresist layer 50-1' can disperse the reflected light, which can realize the function of preventing side light leakage and reflection, as shown in Fig. 3D. The negative photoresist layer 50-2' is roughened at the same time and will be removed. The roughening process can also be after step S114.

Step S114: Remove the unexposed negative photoresist layer, and the exposed negative photoresist layer constitutes a black matrix structure; this step is generally called a development step, because the selected photoresist material is a negative photoresist Therefore, the unexposed part can be removed by the developer, as shown in Figure 3E, and only the exposed negative photoresist layer 50-1' is left. The exposed part will remain as the black matrix structure reserved by the present invention.

Step S115: curing the black matrix structure; for example, the black matrix structure formed by the negative photoresist layer 40-1 is further cured into a permanent material layer through thermal curing or light curing, which constitutes the black matrix of the present invention. Matrix anti-scattering layer, as shown in Figure 3F.

The above two different embodiments are post-production methods to form the black matrix anti-dispersion layer of the present invention. Hereinafter, a few embodiments will be briefly described to illustrate the previous method to form the black matrix anti-scattering layer of the present invention.

Next, please refer to Figures 4A-4F, a flowchart of another embodiment of a method for manufacturing a micro-light emitting diode display panel with a black matrix anti-scattering layer of the present invention and a cross-section of each manufacturing stage A schematic diagram, in which the method for manufacturing the micro-light emitting diode display panel with the black matrix anti-scattering layer of the present invention includes:

Step S131: forming a negative photoresist layer on a substrate, the thickness of the negative photoresist layer is equivalent to the height of a micro light emitting diode and an electrode layer; as shown in Figure 4B; method of formation There are many kinds, such as spin coating method or spraying method.

Step S132: Expose the negative type photoresist layer with a photomask, and the exposure positions are defined as the intervals between the micro light emitting diodes; that is, these exposed positions are the negative type as shown in Figure 4C. The photoresist layer 40-n-1, 40-n-2, 40-n-3, 40-n-4, 40-n-5, 40-n-6 and other positions, these positions are the positions of the subsequent pixel space .

Step S133: Remove the unexposed negative photoresist layer, the exposed negative photoresist layer constitutes a black matrix structure, and constitutes a plurality of pixel spaces, the size of the pixel spaces is slightly larger than the light emitting diode The size of the polar body; this step is generally called the development step. Since the photoresist material selected is a negative photoresist, the unexposed part can be removed by the developer, as shown in Figure 4D, and Only the exposed negative photoresist layer 40-1 is left. The exposed negative photoresist layer 40-1 will remain as the black matrix structure intended by the present invention. This step can generate pixel space 60-n-1, 60-n-2, 60-n-3, 60-n-4, 60-n-5, 60-n-6, etc. The width of this pixel space, It is greater than the width of the micro-light-emitting diode within a range of at most 20um; or, the width of the pixel space is greater than the width of the micro-light-emitting diode by at least 10um and at most 20um.

Step S134: curing the black matrix structure; for example, the black matrix structure formed by the negative photoresist layer 40-1 is further cured into a permanent material layer through thermal curing or light curing, and the result is shown in FIG. 4D.

Step S135: Fabricate the electrode layer in the pixel spaces; as shown in Fig. 4E As shown, electrodes 20-n-1, 20-n-2, 20-n-3, 20-n-4, 20-n-5, and 20-n-6 were produced. Since the pixel space 60-n-1, 60-n-2, 60-n-3, 60-n-4, 60-n-5, 60-n-6 has been defined, it can be through metal deposition, Photoresist coating, exposure, development and other processes can produce the required electrodes in the pixel space.

Step S136: Transfer a huge amount of micro light emitting diodes to these pixel spaces; after completion, it is as shown in FIG. 4F. Since the pixel space 60-n-1, 60-n-2, 60-n-3, 60-n-4, 60-n-5, 60-n-6 has been defined, it can be through metal deposition, After the photoresist coating, exposure, development and other processes, the micro light-emitting diode is transferred to the electrode in the pixel space by a large amount, the entire production process is completed, as shown in Figure 4F.

Next, please refer to Figures 5A-5G, a flowchart of another embodiment of a method for manufacturing a micro-light emitting diode display panel with a black matrix anti-scattering layer of the present invention and a schematic cross-sectional view of each manufacturing stage. The invented method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer includes:

Step S141: forming a negative photoresist layer on a substrate. The thickness of the negative photoresist layer is thinner than the height of the combined height of a micro light emitting diode and an electrode layer; the thickness of the negative photoresist layer 50 is less than 5um and greater than 1um; the thickness of the negative photoresist layer is the thickness of the black matrix anti-scattering layer of the present invention. As shown in Figure 4B; there are many methods of formation, such as spin coating or spraying.

Step S142: Expose the negative type photoresist layer with a photomask, and the exposure positions are defined as the intervals between the micro light emitting diodes; that is, the positions of these exposures are the negative type as shown in Figure 4C. Photoresist layer 50-n-1, 50-n-2, 50-n-3, 50-n-4, 50-n-5, 50-n-6 and other positions, these positions are the positions of subsequent pixel spaces .

Step S143: Remove the unexposed negative photoresist layer and the exposed negative photoresist layer The photoresist layer constitutes a black matrix structure and constitutes a plurality of pixel spaces. The size of the pixel spaces is slightly larger than the size of the micro light-emitting diode; this step is generally called the development step, because the selected photoresist material is negative Therefore, the unexposed part can be removed by the developer, as shown in Fig. 4D, and only the exposed negative photoresist layer 50-1 is left. The exposed negative photoresist layer 40-1 will remain as the black matrix structure intended by the present invention. This step can generate pixel space 60-n-1, 60-n-2, 60-n-3, 60-n-4, 60-n-5, 60-n-6, etc. The width of this pixel space, It is greater than the width of the micro-light-emitting diode within a range of at most 20 um; or, the width of the pixel space is greater than the width of the micro-light-emitting diode within a range of at least 10 um and at most 20 um.

Step S144: curing the black matrix structure; for example, further curing the black matrix structure formed by the negative photoresist layer 50-1 into a permanent material layer through thermal curing or light curing, and the result is shown in FIG. 5D.

Step S145: Roughen the negative photoresist layer; since this embodiment uses the concept of black film photoresist to achieve the anti-side light leakage and reflection, the negative photoresist layer 50-1 is roughened to After the negative photoresist layer 50-1', the negative photoresist layer 50-1' constitutes the black matrix anti-dispersion layer of the present invention, which can disperse the reflected light and realize the anti-side light leakage And the function of reflection, as shown in Figure 5E. The roughening process may also be after step S143.

Step S146: Fabricate the electrode layer in the pixel spaces; as shown in Figure 5F, fabricate electrodes 20-n-1, 20-n-2, 20-n-3, 20-n-4, 20- n-5, 20-n-6. Since the pixel space 60-n-1, 60-n-2, 60-n-3, 60-n-4, 60-n-5, 60-n-6 has been defined, it can be through metal deposition, Photoresist coating, exposure, development and other processes can produce the required electrodes in the pixel space.

Step S147: Transfer a huge amount of micro light emitting diodes to these pixel spaces; end After completion, it will be as shown in Figure 5G. Since the pixel space 60-n-1, 60-n-2, 60-n-3, 60-n-4, 60-n-5, 60-n-6 has been defined, it can be through metal deposition, After the photoresist coating, exposure, development and other processes, the micro light-emitting diode is transferred to the electrode in the pixel space by a large amount, the entire production process is completed, as shown in Figure 5G.

Next, please refer to Figures 6A-6F, the flow chart of another embodiment of the method for fabricating a micro-light emitting diode display panel with a black matrix anti-scattering layer of the present invention and the cross-sectional schematic diagrams and top views of each fabrication stage. Wherein, the manufacturing method of the micro light emitting diode display panel with the black matrix anti-scattering layer of the present invention includes:

Step S151: A negative photoresist layer is formed on a substrate having electrode layers corresponding to a plurality of pixels. The thickness of the negative photoresist layer is equivalent to the sum of a micro light emitting diode and the electrode layer. Height: The fabricated electrodes 20-n-1, 20-n-2, 20-n-3, 20-n-4, 20-n-5, 20-n-6 are shown in Figures 6B and 6C; There are many methods of formation, such as spin coating or spraying.

Step S152: Expose the negative photoresist layer with a photomask, and the exposure positions are defined as the intervals between the micro-light emitting diodes; that is, these exposed positions are the negative type as shown in Fig. 6D The photoresist layer 40-n-1, 40-n-2, 40-n-3, 40-n-4, 40-n-5, 40-n-6 and other positions, these positions are the positions of the subsequent pixel space .

Step S153: The unexposed negative photoresist layer is removed, and the exposed negative photoresist layer forms a black matrix structure and forms a plurality of pixel spaces, and the size of the pixel spaces is slightly larger than that of the light emitting diode. The size of the pole body; this step is generally called the development step. Since the photoresist material selected is a negative photoresist, the unexposed part can be removed by the developer, as shown in Figure 6E As shown, only the exposed negative photoresist layer 40-1 is left. The exposed negative photoresist layer 40-1 will remain as the black matrix structure intended by the present invention. This pixel space is the space above the electrodes 20-n-1, 20-n-2, 20-n-3, 20-n-4, 20-n-5, 20-n-6, and the width of the pixel space , Is greater than the width of the micro-light-emitting diode within a range of at most 20um; or, the width of the pixel space is greater than the width of the micro-light-emitting diode within a range of at least 10um and at most 20um.

Step S154: curing the black matrix structure; for example, the black matrix structure formed by the negative photoresist layer 40-1 is further cured into a permanent material layer through thermal curing or light curing, and the result is shown in FIG. 6E.

Step S155: Transfer a huge amount of micro light emitting diodes to these pixel spaces; as shown in Figure 6F, due to the pixel spaces 60-n-1, 60-n-2, 60-n-3, 60-n -4, 60-n-5, and 60-n-6 have been defined, so, through the mass transfer technology, micro-light-emitting diodes can be fabricated on the electrodes in the pixel space.

Next, please refer to Figures 7A-7G, the flow chart of another embodiment of the method for fabricating a micro-light emitting diode display panel with a black matrix anti-scattering layer of the present invention and a schematic cross-sectional view of each fabrication stage. The invented method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer includes:

Step S161: A negative photoresist layer is formed on a substrate having electrode layers corresponding to a plurality of pixels. The thickness of the negative photoresist layer is thinner than that of a micro light emitting diode and the electrode layer. Height; The fabricated electrodes 20-n-1, 20-n-2, 20-n-3, 20-n-4, 20-n-5, 20-n-6 are shown in Figures 7B and 7C; The thickness of the negative photoresist layer 50 is less than 5um and greater than 1um; the thickness of the negative photoresist layer 50 is the thickness of the black matrix anti-scattering layer of the present invention. There are many methods for forming the negative photoresist layer 50, such as a spin coating method or a spraying method.

Step S162: Expose the negative type photoresist layer with a photomask, and the exposure positions are defined as the intervals between the micro-light emitting diodes; that is, these exposed positions are the negative type as shown in Fig. 7D Photoresist layer 50-n-1, 50-n-2, 50-n-3, 50-n-4, 50-n-5, 50-n-6 and other positions, these positions are the positions of subsequent pixel spaces .

Step S163: The unexposed negative photoresist layer is removed, and the exposed negative photoresist layer forms a black matrix structure and forms a plurality of pixel spaces, and the size of the pixel spaces is slightly larger than that of the light emitting diode. The size of the polar body; this step is generally called the development step. Because the photoresist material selected is a negative photoresist, the unexposed part can be removed by the developer, as shown in Figure 7E, and Only the exposed negative photoresist layer 50-1 is left. The exposed negative photoresist layer 50-1 will remain as the black matrix structure intended by the present invention. This step can generate a pixel space, and the width of the pixel space is greater than the width of the micro-light-emitting diode within a range of at most 20um; or, the width of the pixel space is greater than the width of the micro-light-emitting diode at least 10um and at most 20um. .

Step S164: curing the black matrix structure; for example, further curing the black matrix structure formed by the negative photoresist layer 50-1 into a permanent material layer through thermal curing or light curing, and the result is shown in FIG. 7E.

Step S165: Roughen the negative photoresist layer; since this embodiment uses the concept of black film photoresist to achieve the anti-side light leakage and reflection, the negative photoresist layer 50-1 is roughened to After the negative photoresist layer 50-1', the negative photoresist layer 50-1' constitutes the black matrix anti-dispersion layer of the present invention, which can disperse the reflected light and realize the anti-side light leakage And the function of reflection, as shown in Figure 7F. The roughening process may also be after step S143.

Step S166: Transfer a huge amount of micro light-emitting diodes to these pixel spaces; as shown in Figure 7G, due to the pixel spaces 60-n-1, 60-n-2, 60-n-3, 60-n -4, 60-n-5, 60-n-6 already It has been defined, so the micro light emitting diode can be fabricated on the electrode in the pixel space through the mass transfer technology.

As shown in the foregoing various embodiments, the present invention uses different manufacturing processes to fabricate the micro light emitting diode display panel with the black matrix anti-scattering layer of the present invention, which includes: a substrate; an electrode layer, It has a plurality of electrodes formed on the substrate to define a plurality of pixels; a plurality of micro-light emitting diodes are individually adhered to the electrodes; and a black matrix anti-scattering layer formed on the micro-electrodes with a black negative photoresist The space between the light-emitting diodes, and the black matrix anti-scattering layer constitutes a plurality of pixel spaces to define the pixels. The micro-light-emitting diode display panel with a black matrix anti-scattering layer of the present invention can prevent the problems of light leakage and reflection between the micro-light-emitting diodes, and can achieve special technical effects such as improving pixel definition and contrast. .

Although the technical content of the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Anyone who is familiar with this technique and makes some changes and modifications without departing from the spirit of the present invention should be covered by the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of the attached patent application.

10‧‧‧Substrate

20-n-2, 20-n-3, 20-n-4, 20-n-5, 20-n-6‧‧‧ electrode

30-n-1‧‧‧μLED die

40-1‧‧‧Negative photoresist layer

Claims (21)

A micro-light-emitting diode display panel with a black matrix anti-scattering layer, comprising: A substrate; An electrode layer having a plurality of electrodes, formed on the substrate, and defining a plurality of pixels; A plurality of micro-luminescence diodes are individually adhered to the electrode; and A black matrix anti-dispersion layer is formed with black negative photoresist in the space between the micro light-emitting diodes, and the black matrix anti-dispersion layer forms a plurality of pixel spaces to define the pixels. The micro-light-emitting diode display panel with a black matrix anti-scattering layer according to claim 1, wherein the thickness of the black-matrix anti-scattering layer is compared with the addition of the electrode layer and the micro-light-emitting diode layers The thickness is comparable. The micro light emitting diode display panel with a black matrix anti-scattering layer as described in claim 2, wherein the upper part of the black matrix anti-scattering layer is roughened. The micro-light-emitting diode display panel with a black matrix anti-scattering layer according to claim 1, wherein the thickness of the black-matrix anti-scattering layer is compared with the addition of the electrode layer and the micro-light-emitting diode layers The thickness of the black matrix is relatively thin, and the thickness of the black matrix anti-scattering layer is less than 5um and greater than 1um. The micro light emitting diode display panel with a black matrix anti-scattering layer as described in claim 4, wherein the upper part of the black matrix anti-scattering layer is roughened. The micro light emitting diode display panel with a black matrix anti-scattering layer as described in claim 1, wherein the width of the pixel spaces formed by the black matrix anti-scattering layer is greater than the width of the micro light emitting diode Within the range of 20um at most. The micro light emitting diode display panel with a black matrix anti-scattering layer as described in claim 1, wherein the width of the pixel spaces formed by the black matrix anti-scattering layer is greater than the width of the micro light emitting diode The degree is within the range of at least 10um and at most 20um. A manufacturing method of a micro-light-emitting diode display panel with a black matrix anti-scattering layer, comprising: Forming a negative photoresist layer on a micro-light-emitting diode substrate that has completed mass transfer; Expose the negative photoresist layer with a mask, and the exposure position is the interval between a plurality of micro-light-emitting diodes in the micro-light-emitting diode substrate; Removing the unexposed negative photoresist layer, and the exposed negative photoresist layer forms a black matrix structure; and The black matrix structure is cured. The method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer as described in claim 8, wherein the thickness of the negative photoresist layer is equivalent to the height of the micro-light-emitting diode. The method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer according to claim 8, wherein the thickness of the negative type photoresist layer is less than the height of the micro-light-emitting diodes, and the negative type photoresist The thickness of the layer is less than 5um and greater than 1um. According to claim 10, the method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer, after the exposure step, further includes: The negative photoresist layer is roughened. A method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer includes: forming a negative photoresist layer on a substrate; Expose the negative photoresist layer with a photomask, and the exposure position is a position defining the interval between a plurality of micro-light emitting diodes; The unexposed negative photoresist layer is removed, and the exposed negative photoresist layer forms a black matrix Structure, and constitute a plurality of pixel spaces, the size of the pixel spaces is slightly larger than the size of the micro light emitting diode; Curing the black matrix structure; Fabricating the electrode layer in the pixel spaces; and A huge amount of micro light emitting diodes are transferred to these pixel spaces. According to claim 12, the method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer, wherein the thickness of the negative photoresist layer is equivalent to the height of the micro-light-emitting diode. The method for manufacturing a micro light emitting diode display panel with a black matrix anti-scattering layer according to claim 12, wherein the thickness of the negative photoresist layer is less than the height of the micro light emitting diodes, and the negative light The thickness of the barrier layer is less than 5um and greater than 1um. The method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer as described in claim 14, after the exposure step, further includes: The negative photoresist layer is roughened. The micro-light-emitting diode display panel with a black matrix anti-scattering layer according to claim 12, wherein the width of the pixel spaces formed by the black matrix structure is greater than the width of the micro-light-emitting diode by at most 20um Inside. A manufacturing method of a micro-light-emitting diode display panel with a black matrix anti-scattering layer, comprising: Forming a negative photoresist layer on a substrate having electrode layers corresponding to a plurality of pixels; Expose the negative photoresist layer with a photomask, and the exposure position is a position defining the interval between a plurality of micro-light emitting diodes; The unexposed negative photoresist layer is removed, and the exposed negative photoresist layer forms a black matrix Structure, and constitute a plurality of pixel spaces, the size of the pixel spaces is slightly larger than the size of the micro light emitting diode; Curing the black matrix structure; and A huge amount of micro light emitting diodes are transferred to these pixel spaces. The method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer according to claim 17, wherein the thickness of the negative photoresist layer is equivalent to the height of the micro-light-emitting diode. The method for manufacturing a micro light emitting diode display panel with a black matrix anti-scattering layer as claimed in claim 17, wherein the thickness of the negative photoresist layer is less than the height of the micro light emitting diodes, and the negative light The thickness of the barrier layer is less than 5um and greater than 1um. According to claim 19, the method for manufacturing a micro-light-emitting diode display panel with a black matrix anti-scattering layer, after the exposure step, further includes: The negative photoresist layer is roughened. The micro-light-emitting diode display panel with a black matrix anti-scattering layer according to claim 17, wherein the width of the pixel spaces formed by the black matrix structure is greater than the width of the micro-light-emitting diode by at most 20um Inside.

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