TWM593565U - Pixel substrate with quantum dots - Google Patents

Abstract

A pixel substrate with quantum dots, comprising: a transparent substrate; a black matrix layer formed on the surface of the transparent substrate, defining a plurality of pixel spaces; a plurality of quantum dot glue layers are individually formed in the pixel spaces; and Wherein, the black matrix layer is made of hardened negative photoresist material, and forms an angle with the transparent substrate less than 90 degrees, so that the pixel spaces form an inverted trapezoidal bowl-shaped structure.

Description

Pixel substrate with quantum dots

The new type relates to a quantum dot technology, especially to a pixel substrate with quantum dots.

Quantum dots (Quantum Dots) as the application materials of flat panel display technology has become the next generation of display technology. Quantum dots have the following characteristics, the conversion spectrum can be adjusted with the size (by adjusting the size of the nanocrystals of the quantum dots, the size is between 1~20nm), high luminous efficiency, good luminous stability and other optical properties. Moreover, quantum dots are mostly inorganic compounds, which have stable performance and excellent durability. Make quantum dot technology become the focus of the next generation display technology.

At present, some manufacturers have developed quantum dot light emitting diodes (Quantum Dots Light Emitting Diodes, QD-LEDs), quantum dot organic light emitting diodes (Quantum Dots Organic Light Emitting Diodes, QD-LEDs) and other display technologies. The current development is mainly to use the light-emitting diode or organic light-emitting diode as a light source of quantum dots, so that it can be converted to the spectrum of light emission. No matter what kind of application method, because the manufacturing technology of quantum dots is very different from the manufacturing process of light-emitting diodes or organic light-emitting diodes, the production of pixel substrates composed of quantum dots currently needs to be processed with the two. separate.

Therefore, how to simplify the manufacturing process and structure of the pixel substrate composed of quantum dots has become the development direction that the current quantum dot display technology developers are seeking.

In order to achieve the above purpose, the present invention provides a pixel substrate with quantum dots and a manufacturing method thereof, which can achieve the simplest process to produce a pixel substrate with quantum dots, and make quantum dot infusion easy, the production yield is improved, and it can be further accelerated Quantum dots are used to show the special technical effects of technological processes.

The object of the present invention is to provide a pixel substrate with quantum dots, including: a transparent substrate; a black matrix layer formed on the surface of the transparent substrate, defining a plurality of pixel spaces; a plurality of quantum dot glue layers, individually formed in In the pixel space; and wherein, the black matrix layer is made of hardened negative photoresist material, and forms an angle with the transparent substrate of less than 90 degrees, so that the pixel spaces form an inverted trapezoidal bowl structure.

In order to make the above-mentioned and other objects, features, and advantages of the present invention more obvious and understandable, a few preferred embodiments are described below in conjunction with the accompanying drawings, which are described in detail as follows (embodiments).

2: local

10: Pixel substrate with quantum dots

11: Transparent substrate

12: photoresist layer

12-1: Black matrix layer

20: Luminous layer

30-1, 30-2, 30-3: quantum dot glue layer

40: Mask

80: ultraviolet light

90: light

91: target light

FIG. 1 is a flow chart of a method for manufacturing a pixel substrate with quantum dots disclosed in the present invention.

2A-2E, which is a flow chart of the cross-sectional view of part 2 of FIG. 3B.

FIG. 3A illustrates a schematic diagram of the pixel substrate 10 with quantum dots and the corresponding light-emitting substrate 20 of the present invention.

FIG. 3B is an enlarged schematic diagram of the pixel substrate 10 with quantum dots and the corresponding part 2 of the new type.

FIG. 3C is a cross-section of the partial portion 2 of the pixel substrate 10 with quantum dots of the new type along the A-A section line Schematic.

According to an embodiment of the present invention, the present invention uses an exposure and development process to produce a pixel substrate with quantum dots, thereby producing a high-precision black matrix layer, so that quantum dots can be accurately poured into the pixel space defined by the black matrix layer Medium, and further to achieve a simple manufacturing process, high-resolution next-generation display technology required quantum dot pixel substrate, as a quantum dot display.

Please refer to FIG. 1 for a flow chart of a method for manufacturing a pixel substrate with quantum dots disclosed in the present invention. Please also refer to FIGS. 2A-2E (the production flow of the cross-sectional view of Part 2 in FIG. 3B), including:

Step S101: forming a photoresist layer on the surface of the transparent substrate; for example, using a spray coating method, gradually forming a photoresist with a thickness between 1.5um and 20um; or forming a photoresist with a thickness between 15um and 20um. Since this photoresist layer will be made into a permanent material layer in the future, a negative photoresist is used. In addition, the photoresist layer will be made into a black matrix structure, therefore, a negative photoresist material doped with black pigment may be used. As shown in FIGS. 2A and 2B, in the region of the enlarged portion 2, a photoresist layer 12 with a film thickness between 1.5 μm and 20 μm is formed on the transparent substrate 11 by spray coating.

Step S102: Expose the photoresist layer with a photomask; the photomask is a photomask pattern corresponding to a black matrix structure, which can be exposed by ultraviolet light. As shown in FIG. 2C, the photoresist layer 12 can be exposed with the photomask 40 exposed to the ultraviolet light 80.

Step S103: remove the unexposed photoresist layer, and make the unexposed photoresist layer into a black matrix structure of a trapezoidal structure to define a plurality of pixel spaces, and the black matrix structure and the transparent substrate Forming an angle less than 90 degrees; because the photoresist material selected is negative Type photoresist, therefore, the unexposed parts will be removed by the developer. The exposed part will remain as the black matrix structure reserved for this new model. In addition, since the black matrix structure to be formed and the transparent substrate are in contact with each other at an angle of less than 90 degrees, the black matrix layer 12-1 itself forms a positive ladder-type structure, and the appropriate developer and It takes time to develop this trapezoidal structure. The angle of the included angle is between 45 and 90 degrees, or the angle of the included angle is between 60 and 85 degrees. Please refer to FIG. 2D, the exposed part constitutes the black matrix layer 12-1.

Step S104: curing the black matrix structure; for example, the black matrix structure is further cured into a permanent material layer through thermal curing or light curing.

Step S105: each pixel space is correspondingly filled with a quantum dot glue layer corresponding to the pixel material. For example, inkjet coating (Inkjet printing) can be used to accurately convert the same light source into different colors of quantum dot inkjet coating in the corresponding pixel space. The thickness of the quantum dot glue layer is smaller than the thickness of the black matrix layer, and is between 1um~15um, or between 1um~9um, or between 1um~5um. Please refer to FIG. 2E, the quantum dot glue layers 30-1, 30-2, 30-3 are independently formed in the pixel space formed by the black matrix layer 12-1, and can be based on different light conversion efficiency Adjusting the thickness of the quantum dot glue layers 30-1, 30-2, 30-3 can be achieved by controlling the length of inkjet coating. The thickness of the quantum dot layer with higher light conversion efficiency is less than the thickness of the quantum dot layer with lower light conversion efficiency. This technical feature can solve the different conversion rates of different quantum dot formulas The problem is that the quantum dots of different colors can achieve the same luminosity, thereby achieving the special technical effect of solving the color shift problem caused by the different conversion efficiency of quantum dots. For example, the quantum dot glue in the quantum dot glue layer 30-1 has a light conversion efficiency of 95%, and the quantum dot glue in the quantum dot glue layer 30-2 has a light conversion efficiency of 85%, and the quantum dot glue layer 30 The light conversion efficiency of quantum dot glue in -3 is 70%. The thicknesses of 30-1, 30-2, and 30-3 correspond to basic thickness/95%, basic thickness/85%, and basic thickness/70%. In this way, a situation in which the thickness of the quantum dot glue layers 30-1, 30-2, and 30-3 in FIG. 2E are different is formed. Of course, if the conversion efficiencies of quantum dots of different colors, such as red, blue, and green are the same, the same thickness of the quantum dots can be used. The basic thickness of the quantum dot glue layer is also smaller than the thickness of the black matrix layer, and the thickness of the quantum dot glue layer after conversion efficiency conversion must also be smaller than the thickness of the black matrix layer.

Among them, the transparent substrate 11 may be a PET substrate (polyethylene terephthalate (Polyethylene terephthalate, PET for short), COP substrate, PC substrate, CPI substrate, glass substrate, Polyvinyl Butyral Resin (Polyvinyl Butyral Resin for short) PVB) substrate etc. The light transmittance of the transparent substrate 10 in the visible light band is greater than 80%.

The photoresist in the new type uses a negative photoresist, but preferably, the photoresist layer of the new type uses a high-resolution negative photoresist. The material of the photoresist layer is mainly composed of polymer resin (Resin), photosensitive initiator (Photo initiator), monomer (Monomer), solvent (Solvent), and additives (Additives).

Among the materials of the photoresist layer, the functions of the polymer resin (Resin) are adhesion, developability, pigment dispersibility, fluidity, heat resistance, chemical resistance, and analytical ability; the photo initiator The function is the photosensitive property and resolution ability; the monomer (Monomer) function is adhesion, developability and resolution ability; the solvent (Solvent) function is viscosity and coating properties; the additive (Additives) function is coating property and leveling Sex and foaming.

The polymer resin (Resin) may be a polymer or copolymer containing a carboxylic acid group (COOH), such as acrylic resin, acrylic-epoxy resin, acrylic_melamine ( Melamine resin, acrylic-styrene resin, phenol-phenolic resin (Phenolic Aldehyde) resins such as resins, or any combination of the above resins, but not limited to this. The weight percentage of the resin in the photoresist may range from 0.1% to 99%.

The monomers can be divided into water-insoluble and water-soluble monomers, wherein the water-insoluble monomer (water-insolubleMonomer) can be pentaerythritol triacrylate, trimethyl ether propane triacrylate, trimethyl ether propane Trimethacrylate, tri, di-ethanol isocyanate triacrylate, di, trimethanol propane tetraacrylate, diisopentaerythritol pentaacrylate, pentaacrylate, isopentaerythritol tetraacetate; dihexamethylene hexaacetate Alcohol, diisopentaerythritol hexaacetate, or polyfunctional monomers, dendritic/multiplex acrylate oligomers, polycluster polyether acrylate, urethane. Water-soluble monomers can be Ethoxylated (polyoxyethylene) (EO) base and Propoxylated (polyoxypropylene) (PO) monomers; for example: di-(di- Oxyethylene oxyethylene) vinyl acrylic unitary purpose, fifteen polyoxyethylene trimethanol propane triacrylate, trioxyethylene di, di-bis-p-phenol methane diacrylate, thirty oxyethylene di, di-di pairs Phenolmethane dimethacrylate unitary purpose, eicosoxyethylene trimethanol propane triacrylate, pentaoxyethylene trimethanol propane triacrylate, methyloxygen 550 oxyethylene monomethacrylate, dioxygen Ethylene diacrylate, four hundred oxygen ethylene diacrylate unitary purpose, four hundred oxygen ethylene dimethacrylate, six hundred oxygen ethylene diacrylate, six hundred oxygen ethylene dimethacrylate, polyoxypropylene monomethacrylate . Of course, it is also possible to add two or more monomers (monomer) and mix them into a co-monomer. The weight percentage of the monomer or comonomer in the photoresist may range from 0.1% to 99%.

The photo initiator can be selected from the group consisting of acetophenone compounds, benzophenone compounds, bis-imidazole compounds, benzoin compounds and benzyl compounds. Acyl compound (Benzii), α-amino ketone compound (α-amino ketone), acyl phosphine oxide compound (Acyl phosphine oxide) Or the benzoyl formate compound and the photoinitiator are optionally mixed, but not limited to this. The weight percentage of the photoinitiator in the photoresist may range from 0.1 to 10%.

Solvent can be ethylene glycol monopropylether, di-ethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol ether (ethyleneglycol monoethyl ether), di-ethylene glycol mono-methylether, di-ethylene glycol mono-ethyl ether, di-ethylene glycol mono-butyl ether -butyl ether), propylene glycol mono-methyl ether acetate, propylene glycol mono-ethyl ether acetate, propylene glycol mono-propyl ether acetate, 3 -Ethoxypropyl propionate (ethyl3_ethoxy propionate), etc., or any combination of the above solvents, but not limited to this. The weight percentage of the solvent in the photoresist may range from 0.1% to 99%.

The additive is generally a pigment dispersant, which is a component that must be added to the photoresist containing the pigment, and is generally a nonionic surfactant, for example: Solsperse39000, Solsperse21000, the weight percentage of this dispersant in the photoresist can be up to 0.1 to 5%.

When performing exposure in step S102 of the present invention, it further includes: (1) Substrate Clean; (2) Coating; (3) Pre-baking; (4) Exposure ); (5) Development and other processing steps.

Next, please refer to FIG. 3A, which illustrates a schematic diagram of the pixel substrate 10 with quantum dots of the present invention and the corresponding light-emitting substrate 20; FIG. 3B is a pixel substrate 10 with quantum dots of the present invention and its corresponding FIG. 3C is a schematic cross-sectional view of Part 2 of the pixel substrate 10 with quantum dots of the new type along the AA section line.

Figures 3A-3C reveal the pixel substrate 10 with quantum dots of the present invention, which includes: a transparent substrate 11, a black matrix layer 12-1 and a plurality of quantum dot glue layers 30-1, 30-2, 30-3 . Among them, the black matrix layer 12-1 is formed on the surface of the transparent substrate 10 and defines a plurality of pixel spaces; the plurality of quantum dot glue layers 30-1, 30-2, 30-3 are individually formed in the pixel space, and, Have the same thickness or different thickness. Among them, the black matrix layer 12-1 is hardened by a negative photoresist material, and the portion in contact with the transparent substrate 10 forms an angle of less than 90 degrees (the black matrix layer 12-1 itself is a positive ladder structure) , And make these pixel spaces form an inverted trapezoidal bowl-shaped structure, as shown in FIG. 3C.

In FIG. 3A, it is an embodiment using the light emitting layer 20. The light emitting layer 20 may be an LED light emitting layer or an OLED light emitting layer. The light 90 emitted by the control light-emitting layer 20 is converted into the target light 91 after being converted by the pixel substrate 10 with quantum dots.

The thickness of the black matrix layer 12-1 is between 1.5um and 40um; for another embodiment of the present invention, the thickness of the black matrix layer is between 3um and 40um; for another embodiment of the present invention In other words, the thickness of the black matrix layer is between 5um and 20um; in another embodiment of the present invention, the thickness of the black matrix layer is between 5um and 30um. Wherein, the included angle is between 45 and 90 degrees; for another embodiment of the present invention, the included angle is between 60 and 85 degrees. Among them, the thickness of the plurality of quantum dot glue layers 30-1, 30-2, 30-3 is smaller than the thickness of the black matrix layer 12-1, and is between 1um to 15um, or 1um-9um.

Although the technical content of the new model has been disclosed as above with preferred embodiments, it is not intended to limit the new model. Anyone who is familiar with this skill and makes some changes and retouching without departing from the spirit of the new model should cover the new model. The scope of protection of this new model shall be subject to the scope of the attached patent application.

2: local

11: Transparent substrate

12-1: Black matrix layer

30-1, 30-2, 30-3: quantum dot glue layer

Claims (10)

A pixel substrate with quantum dots, comprising: a transparent substrate; a black matrix layer formed on the surface of the transparent substrate, defining a plurality of pixel spaces; a plurality of quantum dot glue layers are individually formed in the pixel spaces; and Wherein, the black matrix layer is made of hardened negative photoresist material, and the contacting portion of the transparent substrate forms an angle less than 90 degrees, so that the pixel spaces form an inverted trapezoidal bowl-shaped structure. The pixel substrate with quantum dots according to claim 1, wherein the thickness of the black matrix layer is between 3um and 40um. The pixel substrate with quantum dots according to claim 1, wherein the thickness of the black matrix layer is between 3um and 30um. The pixel substrate with quantum dots according to claim 1, wherein the thickness of the black matrix layer is between 3um and 20um. The pixel substrate with quantum dots according to claim 1, wherein the angle of the included angle is between 45 and 90 degrees. The pixel substrate with quantum dots according to claim 1, wherein the angle of the included angle is between 60 and 85 degrees. The pixel substrate with quantum dots according to claim 2 or 3, wherein the thickness of the plurality of quantum dot glue layers is smaller than the black matrix layer and is between 1um and 15um. The pixel substrate with quantum dots according to claim 2 or 3, wherein the thickness of the plurality of quantum dot glue layers is smaller than the black matrix layer and is between 1um and 9um. The pixel substrate with quantum dots according to claim 1, wherein the quantum dot glue layers include a plurality of quantum dot glues with different light conversion rates, and the quantum dots of quantum dot glue with the same light conversion rate The thickness of the glue layer is the same, and the thickness of the quantum dot glue layers of quantum dot glue with different light conversion efficiency is different. The pixel substrate with quantum dots according to claim 9, wherein the thickness of the quantum dot glue layer with higher light conversion efficiency among the quantum dot glue layers is smaller than that of the quantum dot glue with lower light conversion efficiency The thickness of the layer.

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