CN111668254A - Pixel substrate with quantum dots and manufacturing method thereof - Google Patents
Pixel substrate with quantum dots and manufacturing method thereof Download PDFInfo
- Publication number
- CN111668254A CN111668254A CN201910163974.4A CN201910163974A CN111668254A CN 111668254 A CN111668254 A CN 111668254A CN 201910163974 A CN201910163974 A CN 201910163974A CN 111668254 A CN111668254 A CN 111668254A
- Authority
- CN
- China
- Prior art keywords
- pixel
- black matrix
- matrix layer
- quantum dots
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 239000002096 quantum dot Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000003292 glue Substances 0.000 claims abstract description 13
- 238000005507 spraying Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000178 monomer Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- -1 polyethylene terephthalate Polymers 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 5
- 239000003999 initiator Substances 0.000 description 5
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 4
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- AZUHIVLOSAPWDM-UHFFFAOYSA-N 2-(1h-imidazol-2-yl)-1h-imidazole Chemical compound C1=CNC(C=2NC=CN=2)=N1 AZUHIVLOSAPWDM-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- RDPPKNJLJJVJTA-UHFFFAOYSA-N 2-(2-methylprop-2-enoylperoxy)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOOC(=O)C(C)=C RDPPKNJLJJVJTA-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- DODWKYAKHGELRI-UHFFFAOYSA-N 2-prop-2-enoylperoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOOC(=O)C=C DODWKYAKHGELRI-UHFFFAOYSA-N 0.000 description 2
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- DJOWTWWHMWQATC-KYHIUUMWSA-N Karpoxanthin Natural products CC(=C/C=C/C=C(C)/C=C/C=C(C)/C=C/C1(O)C(C)(C)CC(O)CC1(C)O)C=CC=C(/C)C=CC2=C(C)CC(O)CC2(C)C DJOWTWWHMWQATC-KYHIUUMWSA-N 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- WURBFLDFSFBTLW-UHFFFAOYSA-N benzil Chemical compound C=1C=CC=CC=1C(=O)C(=O)C1=CC=CC=C1 WURBFLDFSFBTLW-UHFFFAOYSA-N 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 230000004304 visual acuity Effects 0.000 description 2
- VBZJQESSWFOWMJ-HPVRKQOGSA-N (2S,3R)-butane-1,2,3,4-tetrol prop-2-enoic acid Chemical group OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC[C@H](O)[C@H](O)CO.OC[C@H](O)[C@H](O)CO.OC[C@H](O)[C@H](O)CO.OC[C@H](O)[C@H](O)CO.OC[C@H](O)[C@H](O)CO VBZJQESSWFOWMJ-HPVRKQOGSA-N 0.000 description 1
- NNNLYDWXTKOQQX-UHFFFAOYSA-N 1,1-di(prop-2-enoyloxy)propyl prop-2-enoate Chemical compound C=CC(=O)OC(CC)(OC(=O)C=C)OC(=O)C=C NNNLYDWXTKOQQX-UHFFFAOYSA-N 0.000 description 1
- MUCVBXYYBWEXHD-UHFFFAOYSA-N 1-ethenoxypentadecane Chemical group CCCCCCCCCCCCCCCOC=C MUCVBXYYBWEXHD-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- LTCBOTDNHLWXHZ-UHFFFAOYSA-N 1-phenylpenta-1,4-dien-3-one styrene Chemical compound C=Cc1ccccc1.C=CC(=O)C=Cc1ccccc1 LTCBOTDNHLWXHZ-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- IQQVCMQJDJSRFU-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCC(CO)(CO)CO IQQVCMQJDJSRFU-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OPDLIVVWTVUXEL-UHFFFAOYSA-N CCO.CCO.C=CC(O)=O.C=CC(O)=O.C=CC(O)=O.N=C=O Chemical compound CCO.CCO.C=CC(O)=O.C=CC(O)=O.C=CC(O)=O.N=C=O OPDLIVVWTVUXEL-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- VJEMKRXPAMGICW-UHFFFAOYSA-N N-(4,6-diamino-1,3,5-triazin-2-yl)prop-2-enamide 1,3,5-triazine-2,4,6-triamine Chemical compound C(=O)(C=C)NC1=NC(=NC(=N1)N)N.N1=C(N)N=C(N)N=C1N VJEMKRXPAMGICW-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- JABXMSSGPHGCII-UHFFFAOYSA-N acetic acid;propane-1,2-diol Chemical compound CC(O)=O.CC(O)CO JABXMSSGPHGCII-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001831 conversion spectrum Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- KEVMYFLMMDUPJE-UHFFFAOYSA-N diisoamyl Natural products CC(C)CCCCC(C)C KEVMYFLMMDUPJE-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- LNKODUSOHVAMCX-UHFFFAOYSA-N methane;prop-2-enoic acid Chemical compound C.OC(=O)C=C.OC(=O)C=C LNKODUSOHVAMCX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 125000006353 oxyethylene group Chemical group 0.000 description 1
- FAQJJMHZNSSFSM-UHFFFAOYSA-N phenylglyoxylic acid Chemical compound OC(=O)C(=O)C1=CC=CC=C1 FAQJJMHZNSSFSM-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a pixel substrate with quantum dots and a manufacturing method thereof, wherein the pixel substrate with quantum dots comprises: a transparent substrate; a black matrix layer formed on the surface of the transparent substrate and defining a plurality of pixel spaces; a plurality of quantum dot glue layers respectively formed in the pixel space; and the black matrix layer is made by hardening a negative photoresist material and forms an included angle smaller than 90 degrees with the transparent substrate, so that the pixel spaces form an inverted trapezoidal bowl-shaped structure. The invention realizes the pixel substrate with quantum dots manufactured by the simplest manufacturing process, facilitates the quantum dots to be easily poured, improves the production yield, and further can accelerate the special technical effect of the quantum dots applied to the display technical process.
Description
Technical Field
The present invention relates to a quantum dot technology, and more particularly, to a pixel substrate with quantum dots and a method for fabricating the same.
Background
Quantum Dots (Quantum Dots) have become the material of the next generation display technology as the application material of the flat panel display technology. The quantum dot has the characteristics that the conversion spectrum can be adjusted along with the size (the size is between 1nm and 20nm by adjusting the size of the nano crystal of the quantum dot), the luminous efficiency is high, the luminous stability is good, and the like. Moreover, most of the quantum dots are inorganic compounds, and have the characteristics of stable performance and good durability. The quantum dot technology becomes the focus of the next generation display technology.
At present, manufacturers have developed display technologies such as Quantum dot Light emitting diodes (QD-LEDs), Quantum dot Organic Light emitting diodes (QD-LEDs), and the like. The current development mainly utilizes the light emission of the light emitting diode or the organic light emitting diode as the light source of the quantum dot to convert the light emission into the frequency spectrum of the desired light emission. In any application method, the fabrication process of the quantum dot is different from the fabrication process of the light emitting diode or the organic light emitting diode, so the fabrication of the pixel substrate formed by the quantum dot must be separated from the fabrication processes of the two.
Therefore, how to simplify the manufacturing process and structure of the pixel substrate formed by the quantum dots becomes a development direction required by the current quantum dot display technology developers.
Disclosure of Invention
In order to achieve the above objects, the present invention provides a pixel substrate with quantum dots and a method for fabricating the same, which can achieve the simplest process for fabricating the pixel substrate with quantum dots, and make the quantum dots easy to be poured, thereby increasing the production yield and further accelerating the special technical effects of the quantum dots applied to the display technology process.
According to an aspect of the present invention, there is provided a pixel substrate having quantum dots, comprising: a transparent substrate; a black matrix layer formed on the surface of the transparent substrate and defining a plurality of pixel spaces; a plurality of quantum dot glue layers respectively formed in the pixel space; and the black matrix layer is formed by hardening a negative photoresist material, and an included angle smaller than 90 degrees is formed between the black matrix layer and the transparent substrate, so that the pixel spaces form an inverted trapezoidal bowl-shaped structure.
According to another aspect of the present invention, there is provided a method for manufacturing a pixel substrate having quantum dots, including: forming a photoresist layer on the surface of the transparent substrate; exposing the photoresist layer with a mask; removing the unexposed photoresist layer, and making the unexposed photoresist layer into a black matrix layer with a trapezoidal structure to define a plurality of pixel spaces, wherein the black matrix layer and the transparent substrate form an included angle smaller than 90 degrees; curing the black matrix layer; and correspondingly pouring the quantum dot glue layers of the corresponding pixel materials into the pixel spaces respectively.
In order to make the aforementioned and other objects, features and advantages of the invention more comprehensible, several preferred embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a flowchart illustrating a method for manufacturing a pixel substrate with quantum dots according to the present invention;
FIGS. 2A-2E are flow charts illustrating the fabrication of the cross-sectional view of portion 2 of FIG. 3B;
fig. 3A is a schematic diagram illustrating a pixel substrate 10 with quantum dots and a corresponding light-emitting substrate 20 according to the invention;
fig. 3B is an enlarged schematic view of the pixel substrate 10 with quantum dots and the corresponding portion 2 thereof according to the present invention; and
fig. 3C is a cross-sectional view of a portion 2 of the pixel substrate 10 with quantum dots along the line a-a according to the present invention.
Description of the symbols:
2: locally;
10: a pixel substrate having quantum dots;
11: a transparent substrate;
12: a photoresist layer;
12-1: a black matrix layer;
20: a light emitting layer;
30-1, 30-2, 30-3, 30-4, 30-5, 30-6: a quantum dot glue layer;
40: a photomask;
80: ultraviolet light;
90: a light;
91: the target light.
Detailed Description
According to the embodiment of the invention, the pixel substrate with the quantum dots is manufactured by using an exposure and development process so as to manufacture the high-precision black matrix layer, so that the quantum dots can be accurately poured into the pixel space defined by the black matrix layer, and the pixel substrate with the quantum dots, which is required by the next generation display technology with simple process and high resolution, is further achieved to be used as a quantum dot display.
Referring to fig. 1, a flowchart of a method for fabricating a pixel substrate with quantum dots according to the present invention is shown, and referring to fig. 2A-2E (a fabrication flow of a cross-sectional view of a part 2 of fig. 3B), the method for fabricating a pixel substrate with quantum dots includes steps S101 to S105.
Step S101: a photoresist layer is formed on the surface of the transparent substrate. For example, a photoresist with a thickness of 1.5um to 20um is formed in a gradual manner by using a spraying method; alternatively, a photoresist is formed to a thickness of between 15um and 20 um. Since the photoresist layer is subsequently formed as a permanent material layer, a negative photoresist is selected for the formation. In addition, the photoresist layer will be made as a black matrix layer, and thus, a negative photoresist material doped with black pigment may be used. As shown in fig. 2A and 2B, a photoresist layer 12 with a thickness of 1.5um to 20um is formed on a transparent substrate 11 by a spray coating method in an enlarged local area 2.
Step S102: the photoresist layer is exposed by a mask. The mask is a mask pattern corresponding to the black matrix layer and can be exposed by ultraviolet light. As shown in fig. 2C, the photoresist layer 12 is exposed by the mask 40 under the exposure of the ultraviolet light 80.
Step S103: removing the unexposed photoresist layer, and making the unexposed photoresist layer into a black matrix layer with a trapezoidal structure to define a plurality of pixel spaces, wherein the black matrix layer and the transparent substrate form an included angle smaller than 90 degrees. Since the selected photoresist material is a negative photoresist, the unexposed portion can be removed by the developer. And the remaining part is the black matrix layer reserved by the invention. In addition, because the included angle between the black matrix layer to be formed and the transparent substrate is smaller than 90 degrees and is a trapezoid structure, the trapezoid structure can be manufactured by selecting proper developer and developing time in the developing process. The included angle is between 45 and 90 degrees, or the included angle is between 60 and 85 degrees. Referring to fig. 2D, the unexposed portion forms a black matrix layer 12-1.
Step S104: the black matrix layer is cured. The black matrix layer is further cured to a permanent material layer, for example, by thermal curing or photo curing.
Step S105: and correspondingly pouring the quantum dot glue layers of the corresponding pixel materials into the pixel spaces respectively. Wherein, the thickness of quantum dot glue film is less than the thickness of black matrix layer, and between 1um to 15 um. Referring to fig. 2E, the quantum dot paste layers 30-1, 30-2, 30-3, 30-4, 30-5, and 30-6 are independently formed in the pixel space formed by the black matrix layer 12-1, respectively.
The transparent substrate 11 may be a PET (polyethylene terephthalate, abbreviated as PET) substrate, a COP substrate, a PC substrate, a CPI substrate, a glass substrate, a Polyvinyl Butyral Resin (PVB) substrate, or the like. The light transmittance of the transparent substrate 10 in the visible light band is greater than 80%.
The photoresist of the present invention is a negative photoresist, and preferably, the photoresist layer of the present invention is a high resolution negative photoresist. The material of the photoresist layer mainly comprises a high molecular Resin (Resin), a Photo initiator (Photo initiator), a Monomer (Monomer), a Solvent (Solvent) and Additives (Additives).
Wherein in the material of the photoresist layer, the function of the polymer Resin (Resin) is adhesiveness, developability, pigment dispersibility, fluidity, heat resistance, chemical resistance, resolving power; the function of a Photo initiator (Photo initiator) is photosensitive property and resolving power; the Monomer functions in adhesion, developability, and resolution; the function of the Solvent (Solvent) is viscosity and coating properties; the Additives (Additives) function in terms of coatability, leveling and foamability.
The polymer Resin (Resin) may be a polymer or copolymer containing a carboxylic acid group (COOH), such as an acryl (Acrylic) Resin, an acryl-Epoxy (Epoxy) Resin, an acryl Melamine (Melamine) Resin, an acryl-Styrene (Styrene) Resin, a phenol-phenol Aldehyde (Phenolic Aldehyde) Resin, or any mixture thereof, but not limited thereto. The weight percentage of the resin in the photoresist may range from 0.1% to 99%.
The monomer can be water-insoluble and water-soluble monomer, wherein the water-insoluble monomer can be penterythritol triacrylate, trimethyletherpropane trimethacrylate, tri, di-ethanol isocyanate triacrylate, di, trimethylolpropane tetraacrylate, diisopentaerythritol pentaacrylate, and tetraacethylenetetraol; hexa-acetic acid dihexyl tetrol, hexa-acetic acid diisoamyl tetrol, or polyfunctional monomers, dendritic/clustered acrylate oligomers, clustered polyether acrylate, and urethane. The water-soluble monomer can be Ethoxylated (polyoxyethylene) (EO) base and Propoxylated (polyoxypropylene) (PO); for example, the following are: di- (di-oxyethylene-oxy-ethylene) vinyl acrylic acid unitary, pentadecyloxyethylene trimethanolpropane triacrylate, triacontoxyethylene-di, di-p-phenomenol methane diacrylate, thirty oxyethylene-di, di-p-phenomenol methane dimethacrynic acid unitary, eicosyloxyethylene-trimethanolpropane triacrylate, pentadecoxyethylene-trimethanol propane triacrylate, pentadecylopenta-pentadecylol oxyethylene monomethacrylate, di-hundred oxyethylene diacrylate, tetra-hundred oxyethylene-diacrylate unitary, tetra-hundred oxyethylene dimethacrylate, hexa-hundred oxyethylene diacrylate, hexa-hundred oxyethylene dimethacrylate, polyoxypropylene monomethacrylate. It is of course also possible to add two or more monomers (monomers) to mix them to form the comonomer (co-monomer). The weight percentage of monomer or co-monomer in the photoresist may range from 0.1% to 99%.
The photoinitiator (Photo initiator) may be selected from any mixture of the above photoinitiators, such as an acetophenone-based compound (acetophenone), a Benzophenone-based compound (Benzophenone), a bisimidazole-based compound (bis _ imidazole), a Benzoin-based compound (Benzoin), a Benzil-based compound (Benzil), an α -aminoketone-based compound (α -aminoketone), an acylphosphine oxide-based compound (acylphosphine oxide), or a benzoylformate-based compound, but is not limited thereto. The weight percentage of the photoinitiator in the photoresist may range from 0.1 to 10%.
The Solvent (Solvent) may be ethylene glycol propyl ether (ethylene glycol monopropylether), diethylene glycol dimethyl ether (di-ethylene glycol dimethyl ether), tetrahydrofuran, ethylene glycol methyl ether (ethylene glycol monomethyl ether), ethylene glycol ethyl ether (ethylene glycol monoethyl ether), diethylene glycol monomethyl ether (di-ethylene glycol mono-methyl ether), diethylene glycol monoethyl ether (di-ethylene glycol mono-ethyl ether), diethylene glycol monobutyl ether (di-ethylene glycol mono-butyl ether), propylene glycol acetate (propylene glycol mono-methyl ether acetate), propylene glycol ethyl ether acetate (propylene glycol mono-ethyl ether acetate), propylene glycol ethyl ether (propylene glycol mono-ethyl ether acetate), propylene glycol propyl ether (propylene glycol propyl ether acetate (ethylene glycol ethyl ether), and mixtures thereof, but not limited thereto, to 3. The solvent may be present in the photoresist in an amount ranging from 0.1% to 99% by weight.
The additive is typically a pigment dispersant, which is an essential ingredient for a pigment-containing resist, typically a nonionic surfactant, such as: solsperse39000, Solsperse21000, the weight percent of this dispersant in the photoresist can range from 0.1 to 5%.
In step S102 of the present invention, the exposure further includes: (1) substrate cleaning (Substrate Clean); (2) coating (Coating); (3) soft baking (pre-baking); (4) exposure (exposure); (5) development (Developing), and the like.
Next, please refer to fig. 3A, which illustrates a schematic diagram of the pixel substrate 10 with quantum dots and the corresponding light-emitting substrate 20 according to the present invention; fig. 3B is an enlarged schematic view of the pixel substrate 10 with quantum dots and the corresponding portion 2 thereof according to the present invention; fig. 3C is a cross-sectional view of a portion 2 of the pixel substrate 10 with quantum dots along the line a-a according to the present invention.
Fig. 3A-3C disclose a pixel substrate 10 with quantum dots according to the present invention, which comprises: the display panel comprises a transparent substrate 11, a black matrix layer 12-1 and a plurality of quantum dot glue layers 30-1, 30-2, 30-3, 30-4, 30-5 and 30-6. The black matrix layer 12-1 is formed on the surface of the transparent substrate 10, and defines a plurality of pixel spaces; the quantum dot glue layers 30-1, 30-2, 30-3, 30-4, 30-5 and 30-6 are respectively formed in the pixel space. The black matrix layer 12-1 is formed by hardening a negative photoresist material, and forms an included angle smaller than 90 degrees with the transparent substrate 10, so that the plurality of pixel spaces form an inverted trapezoidal frontal bowl-shaped structure, as shown in fig. 3C.
In fig. 3A, an embodiment using the light-emitting layer 20 is shown. The light emitting layer 20 may be an LED light emitting layer or an OLED light emitting layer. The light 90 emitted from the light-emitting layer 20 is controlled and converted into target light 91 by the pixel substrate 10 having quantum dots.
Wherein, the thickness of the black matrix layer 12-1 is between 1.5um and 10 um; for another embodiment of the present invention, the thickness of the black matrix layer is between 10um and 20 um. Wherein the included angle is between 45 degrees and 90 degrees; for another embodiment of the present invention, the included angle is between 60 degrees and 85 degrees. The thicknesses of the quantum dot glue layers 30-1, 30-2, 30-3, 30-4, 30-5 and 30-6 are smaller than that of the black matrix layer 12-1 and range from 1um to 9 um.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (14)
1. A pixel substrate with quantum dots, comprising:
a transparent substrate;
a black matrix layer formed on the surface of the transparent substrate and defining a plurality of pixel spaces;
a plurality of quantum dot glue layers respectively formed in the pixel space; and
the black matrix layer is made by hardening a negative photoresist material, and an included angle smaller than 90 degrees is formed between the black matrix layer and the transparent substrate, so that the plurality of pixel spaces form an inverted trapezoidal bowl-shaped structure.
2. The quantum dot pixel substrate of claim 1, wherein the thickness of the black matrix layer is between 1.5um and 10 um.
3. The quantum dot pixel substrate of claim 1, wherein the thickness of the black matrix layer is between 10um and 20 um.
4. The pixel substrate with quantum dots of claim 1, wherein the included angle is between 45 degrees and 90 degrees.
5. The pixel substrate with quantum dots of claim 1, wherein the included angle is between 60 degrees and 85 degrees.
6. The pixel substrate with quantum dots according to claim 2 or 3, wherein the thickness of the quantum dot glue layers is smaller than that of the black matrix layer and is between 1um and 15 um.
7. The pixel substrate with quantum dots according to claim 2 or 3, wherein the thickness of the quantum dot glue layers is smaller than that of the black matrix layer and is between 1um and 9 um.
8. A method for manufacturing a pixel substrate with quantum dots is characterized by comprising the following steps:
forming a photoresist layer on the surface of the transparent substrate;
exposing the photoresist layer with a mask;
removing the unexposed photoresist layer, and making the unexposed photoresist layer into a black matrix layer with a trapezoidal structure to define a plurality of pixel spaces, wherein the black matrix layer and the transparent substrate form an included angle smaller than 90 degrees;
curing the black matrix layer; and
and correspondingly pouring a quantum dot glue layer of the corresponding pixel material into the pixel spaces respectively.
9. The method of claim 8, wherein the photoresist layer is formed on the surface of the transparent substrate by spraying.
10. The method of claim 8, wherein the thickness of the black matrix layer is between 1.5um and 10 um.
11. The method of claim 8, wherein the thickness of the black matrix layer is between 10um and 20 um.
12. The method of claim 8, wherein the included angle is between 45 degrees and 90 degrees.
13. The method of claim 8, wherein the included angle is between 60 degrees and 85 degrees.
14. The method of claim 9 or 10, wherein the thickness of the quantum dot paste layers is less than that of the black matrix layer and is between 1um and 9 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910163974.4A CN111668254A (en) | 2019-03-05 | 2019-03-05 | Pixel substrate with quantum dots and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910163974.4A CN111668254A (en) | 2019-03-05 | 2019-03-05 | Pixel substrate with quantum dots and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111668254A true CN111668254A (en) | 2020-09-15 |
Family
ID=72381206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910163974.4A Withdrawn CN111668254A (en) | 2019-03-05 | 2019-03-05 | Pixel substrate with quantum dots and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111668254A (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202837751U (en) * | 2012-10-19 | 2013-03-27 | 京东方科技集团股份有限公司 | Colored membrane substrate and liquid crystal display panel |
| CN104733505A (en) * | 2015-03-19 | 2015-06-24 | 京东方科技集团股份有限公司 | Pixel defining layer of light emitting display and manufacturing method thereof |
| US20150301408A1 (en) * | 2013-05-28 | 2015-10-22 | Boe Technology Group Co., Ltd. | Quantum dot color filter and manufacturing method thereof, and display apparatus |
| CN105259696A (en) * | 2015-11-16 | 2016-01-20 | 深圳市华星光电技术有限公司 | Manufacturing method for color filter substrate |
| CN106707607A (en) * | 2017-03-20 | 2017-05-24 | 青岛海信电器股份有限公司 | Quantum-dot color filter, manufacturing method thereof and display device |
| US20170299773A1 (en) * | 2015-08-21 | 2017-10-19 | Boe Technology Group Co., Ltd. | Substrate and Manufacturing Method Therefor, Display Panel and Display Device |
| CN107329314A (en) * | 2017-08-24 | 2017-11-07 | 深圳市华星光电半导体显示技术有限公司 | Color membrane substrates and preparation method thereof, display panel and display |
| US20180031910A1 (en) * | 2015-12-02 | 2018-02-01 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method for manufacturing quantum dot color filter substrate |
| US20180045866A1 (en) * | 2016-08-11 | 2018-02-15 | Samsung Display Co., Ltd. | Color filter and display apparatus including the same |
| CN108205220A (en) * | 2018-01-16 | 2018-06-26 | 青岛海信电器股份有限公司 | Black matrix substrate and preparation method thereof, colored filter, display panel and equipment |
| CN108987442A (en) * | 2018-06-29 | 2018-12-11 | 云谷（固安）科技有限公司 | Organnic electroluminescent device |
| CN109037476A (en) * | 2018-07-26 | 2018-12-18 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
| CN109300395A (en) * | 2018-10-12 | 2019-02-01 | 京东方科技集团股份有限公司 | Color membrane substrates and preparation method thereof and quantum dot display device comprising it |
| CN209401630U (en) * | 2019-03-05 | 2019-09-17 | 恒煦电子材料股份有限公司 | Has the pixel substrate of quantum dot |
-
2019
- 2019-03-05 CN CN201910163974.4A patent/CN111668254A/en not_active Withdrawn
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202837751U (en) * | 2012-10-19 | 2013-03-27 | 京东方科技集团股份有限公司 | Colored membrane substrate and liquid crystal display panel |
| US20150301408A1 (en) * | 2013-05-28 | 2015-10-22 | Boe Technology Group Co., Ltd. | Quantum dot color filter and manufacturing method thereof, and display apparatus |
| CN104733505A (en) * | 2015-03-19 | 2015-06-24 | 京东方科技集团股份有限公司 | Pixel defining layer of light emitting display and manufacturing method thereof |
| US20170299773A1 (en) * | 2015-08-21 | 2017-10-19 | Boe Technology Group Co., Ltd. | Substrate and Manufacturing Method Therefor, Display Panel and Display Device |
| CN105259696A (en) * | 2015-11-16 | 2016-01-20 | 深圳市华星光电技术有限公司 | Manufacturing method for color filter substrate |
| US20180031910A1 (en) * | 2015-12-02 | 2018-02-01 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method for manufacturing quantum dot color filter substrate |
| US20180045866A1 (en) * | 2016-08-11 | 2018-02-15 | Samsung Display Co., Ltd. | Color filter and display apparatus including the same |
| CN106707607A (en) * | 2017-03-20 | 2017-05-24 | 青岛海信电器股份有限公司 | Quantum-dot color filter, manufacturing method thereof and display device |
| CN107329314A (en) * | 2017-08-24 | 2017-11-07 | 深圳市华星光电半导体显示技术有限公司 | Color membrane substrates and preparation method thereof, display panel and display |
| CN108205220A (en) * | 2018-01-16 | 2018-06-26 | 青岛海信电器股份有限公司 | Black matrix substrate and preparation method thereof, colored filter, display panel and equipment |
| CN108987442A (en) * | 2018-06-29 | 2018-12-11 | 云谷（固安）科技有限公司 | Organnic electroluminescent device |
| CN109037476A (en) * | 2018-07-26 | 2018-12-18 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
| CN109300395A (en) * | 2018-10-12 | 2019-02-01 | 京东方科技集团股份有限公司 | Color membrane substrates and preparation method thereof and quantum dot display device comprising it |
| CN209401630U (en) * | 2019-03-05 | 2019-09-17 | 恒煦电子材料股份有限公司 | Has the pixel substrate of quantum dot |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6115471B2 (en) | Negative photosensitive resin composition, partition, black matrix, and optical element | |
| TWI522746B (en) | A negative photosensitive resin composition, a hardened film, a partition wall and a black matrix, a method of manufacturing the same, a color filter, and an organic EL element | |
| CN101669070B (en) | Photosensitive composition, partition wall, black matrix, and method for producing color filter | |
| TWI483068B (en) | Photosensitive composition, partition, color filter and organic EL element (3) | |
| KR20050074546A (en) | Negative type photosensitive resin composition | |
| JP6341093B2 (en) | Negative photosensitive resin composition, cured resin film, partition and optical element | |
| KR102021745B1 (en) | Partial hydrolysis condensation product, ink-repellent agent, negative-type photosensitive resin composition, cured film, partition wall, and optical element | |
| CN211319630U (en) | Pixel substrate with quantum dots | |
| CN210692541U (en) | Micro light-emitting diode display panel with black matrix anti-scattering layer | |
| CN209401630U (en) | Has the pixel substrate of quantum dot | |
| CN112635509A (en) | Micro light-emitting diode display panel with black matrix anti-scattering layer and manufacturing method thereof | |
| KR100791817B1 (en) | Photosensitive resin composition | |
| TWI498372B (en) | Photosensitive composition, partition, color filter and organic EL element (1) | |
| CN210722229U (en) | Pixel substrate with quantum dots | |
| KR20190097031A (en) | Negative photosensitive resin composition | |
| CN111668254A (en) | Pixel substrate with quantum dots and manufacturing method thereof | |
| CN112634766B (en) | Pixel substrate with quantum dots and manufacturing method thereof | |
| TWM593565U (en) | Pixel substrate with quantum dots | |
| TWI494687B (en) | Photosensitive composition, partition, color filter and organic EL element (2) | |
| CN112542098A (en) | Pixel substrate with quantum dots and manufacturing method thereof | |
| KR102461906B1 (en) | Method for manufacturing Flexible photo-pattern mark for organic light emitting diode having high resolution and Method for manufacturing the same | |
| TW202117411A (en) | Pixel substrate with quantum dots and fabrication method thereof comprising a transparent substrate, a black matrix layer, and a plurality of quantum dot adhesive layers | |
| CN210725528U (en) | Double-sided transparent functional plate with ultraviolet absorption layer | |
| TW202117410A (en) | Pixel substrate with quantum dots and manufacturing method thereof wherein the pixel substrate includes a transparent substrate, a black matrix layer and a plurality of quantum dot glue layers | |
| WO2019241945A1 (en) | Method for simultaneously forming patterns on both sides of transparent substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220805 Address after: Unit 706, happy news building, 1 champley street, Hong Kong, China Applicant after: Hengxu Electronic Materials International Co.,Ltd. Address before: Five street Chinese Taiwan County of Hsinchu Aikou No. 5 lane 68 Chupei Applicant before: Hengyu Electronic Materials Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20200915 |
|
| WW01 | Invention patent application withdrawn after publication |