WO2019241945A1

WO2019241945A1 - Method for simultaneously forming patterns on both sides of transparent substrate

Info

Publication number: WO2019241945A1
Application number: PCT/CN2018/092093
Authority: WO
Inventors: 许铭案; 林文福; 陈香婷; 井川昭彦
Original assignee: 日本光电子化学株式会社; 许铭案
Priority date: 2018-06-21
Filing date: 2018-06-21
Publication date: 2019-12-26

Abstract

The present invention provides a method for simultaneously forming patterns on both sides of a transparent substrate, the method mainly involving: simultaneously forming a first photoresist layer and a second photoresist on upper and lower sides of a transparent substrate, and simultaneously forming a first thin film pattern and a second thin film pattern on the upper and lower sides of the transparent substrate via a photolithography program and by means of thin film deposition and etching, wherein the first photoresist layer and the second photoresist layer carry out a reaction by means of absorbing light in different light wavelength ranges during exposure, thereby forming different patterns, and do not affect each other in the process of exposure. By means of the method in the present invention, the steps and costs of a double-sided pattern process of a transparent substrate can be reduced, and the yield of the process can be improved.

Description

Method for simultaneously forming patterns on both sides of transparent substrate

Technical field

The invention relates to a method for forming a pattern, in particular to a method for forming a pattern on both sides of a transparent substrate at the same time.

Background technique

With the rapid rise of global flexible electronics business opportunities, the international community has invested heavily and formed cross-company soft and transparent R & D, actively invested a large amount of manpower and R & D funds, and laid out relevant future soft and transparent electronic products, including soft Displays (Flexible Display), Flexible Solar (Cell), or Flexible Lighting (Flexible Lighting), etc., are expected to seize the market opportunity in the next wave of flexible electronics boom. Transparent electronics is an emerging technology focused on manufacturing thin and transparent electronic components such as displays, chips and circuits. At present, smart devices such as smart phones, smart watches, smart display components, etc., are likely to trend toward transparent electronic devices. These transparent electronic devices are gradually moving towards personalized, beautiful design, etc. These must be achieved through semiconductor manufacturing.

At present, many transparent electronic products make patterns, circuits, and protective films on both sides of a transparent substrate. Traditionally, to make a pattern on both sides of a substrate, the lithography process must be repeated multiple times. The process includes coating, mask lamination, exposure, development, etching, and photoresist removal. Not only is the technical process complicated. , And there are multiple positioning requirements in the process, usually multiple positioning procedures often lead to low yield.

Therefore, how to solve the problem of simultaneously forming a pattern on both sides of a transparent substrate has become the development direction that the related soft process manufacturers hope to demand.

Summary of the Invention

An object of the present invention is to solve the above problems and provide a method for simultaneously forming a pattern on both sides of a transparent substrate.

The invention provides a method for simultaneously forming a pattern on both sides of a transparent substrate, comprising: forming a first thin film layer on an upper surface of the transparent substrate; and simultaneously forming a second thin film layer on a lower surface of the transparent substrate; and A first photoresist layer is formed on the first thin film layer and a second photoresist layer is simultaneously formed on the second thin film layer; a first photomask is placed on the first photoresist layer and simultaneously on the second light A second photomask is placed on the resist layer for exposure; at the same time, a part of the photoresist layer on the upper and lower surfaces of the transparent substrate is removed, so that the uncovered portion of the first thin film layer forms a first pattern space and the first pattern space. The uncovered portion of the two thin film layers forms a second pattern space. If the first photoresist layer and the second photoresist layer use a positive photoresist material, removing a part of the photoresist layer is to remove the exposed photoresist. The first photoresist layer and the second photoresist layer portion. If a negative photoresist material is used in the first photoresist layer and the second photoresist layer, removing a portion of the photoresist layer is to remove the first photoresist layer that has not been exposed. A photoresist layer and the second photoresist layer portion; the first figure is removed at the same time The first thin film layer below the space and the second thin film layer below the second pattern space; and simultaneously removing the first photoresist layer to form a first thin film pattern and the second photoresist layer to form a first Two thin-film patterns; wherein, during exposure, the first photoresist layer and the second photoresist layer absorb light of different light wavelength ranges.

According to a feature of the present invention, a material of the first photoresist layer and the second photoresist layer is selected from polymers or copolymers containing a carboxylic acid group (COOH).

According to the features of the present invention, the material of the first photoresist layer and the second photoresist layer is selected from the group consisting of: acrylic resin, acrylic-epoxy resin, and acrylic-melamine Melamine resin, acrylic-styrene resin or a combination of the above resins.

An object of the present invention is to provide a method for simultaneously forming a pattern on both sides of a transparent substrate, comprising: forming a first photoresist layer on an upper surface of a transparent substrate; and simultaneously forming a second photoresist layer on a lower surface of the transparent substrate. A photoresist layer; placing a first photomask on the first photoresist layer and a second photomask on the second photoresist layer for exposure; and simultaneously removing a part (part of the upper and lower surfaces of the transparent substrate) ) A photoresist layer such that a portion of the substrate not covered by the first photoresist layer forms a first pattern space and a portion of the substrate not covered by the second photoresist layer forms a second pattern space; wherein, if the first photoresist Layer and the second photoresist layer use a positive photoresist material, then removing a part of the photoresist layer is to remove the exposed first photoresist layer and the second photoresist layer, and if the first photoresist layer and the The second photoresist layer uses a negative photoresist material, so removing a part of the photoresist layer is to remove the unexposed first photoresist layer and the second photoresist layer portion; at the same time, a first photoresist layer is formed in the first pattern space. A thin film layer and forming a second thin film layer in the second pattern space; and The exposed first photoresist layer is formed to form a first thin film pattern and the exposed second photoresist layer is formed to form a second thin film pattern; wherein during the exposure, the first photoresist layer and the second photoresist layer are formed. The photoresist layer absorbs light in different wavelength ranges.

According to a feature of the present invention, the first photoresist layer mainly absorbs light bands below 400 nanometers (nm), and the second photoresist layer mainly absorbs light bands above 400 nanometers (nm). According to a feature of the present invention, a light source is used when performing exposure, the light source has a first characteristic wavelength and a second characteristic wavelength, wherein the first characteristic wavelength is mainly light below 400 nanometers, and the second characteristic The wavelength is mainly light above 400 nanometers.

According to the features of the present invention, a first light source and a second light source are used in the exposure. The first light source has a first characteristic wavelength, mainly light below 400 nanometers, and the second light source has a second The characteristic wavelength is mainly light above 400 nanometers.

In the present invention, a photoresist pattern is produced by using a yellow light lithography process, and then a functional pattern is formed by a technical method of a thin film etching or lift-off process. In the lithography process, the upper and lower layers of light are used. Blocking the absorption of light in different light wavelength ranges to produce different patterns, and do not affect each other during the exposure process, to achieve the process of simultaneously forming a pattern on both sides of a transparent substrate at the same time, to reduce the steps and processes of a double-sided pattern process on a transparent substrate Cost and improve the technical efficiency of the process yield. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, several preferred embodiments are exemplified below, and described in detail with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of forming a pattern on both sides of a transparent substrate simultaneously.

FIG. 2 is a flowchart of a method for simultaneously forming a pattern on both sides of a transparent substrate by a thin film etching process according to a first embodiment of the present invention.

FIG. 3A to FIG. 3F are schematic diagrams of structural changes of simultaneously forming a pattern on both sides of a transparent substrate using a thin film etching process according to the first embodiment of the present invention.

4 is a flowchart of a method for simultaneously forming a pattern on both sides of a transparent substrate by using a photoresist lift-off process according to a second embodiment of the present invention.

5A to FIG. 5E are schematic diagrams of structural changes of simultaneously forming a pattern on both sides of a transparent substrate by using a photoresist lift-off process according to a second embodiment of the present invention.

In the picture:

10 transparent substrates; 12 upper surface; 14 lower surface; 60 first thin film pattern;

62 the first thin film layer; 64 the first photoresist layer; 65 the first photomask;

70 a second thin film pattern; 72 a second thin film layer; 74 a second photoresist layer; 75 a second photomask.

detailed description

According to an embodiment of the present invention, the present invention uses a photoresist lift-off process or a thin film etching technique to realize a process of simultaneously forming a pattern on both sides of a transparent substrate at the same time, thereby reducing the The steps and costs of the double-sided pattern process, and improve the technical efficacy of the process yield.

Please refer to FIG. 1 first, which is a schematic view of forming a pattern on both sides of a transparent substrate at the same time according to the present invention. A first thin film pattern 60 is provided on an upper surface 12 of a transparent substrate 10, and a second thin film pattern 70 is provided on a lower surface 14 of the transparent substrate 10. The transparent substrate 10 can be a glass, quartz, or plastic substrate, such as polyethylene terephthalate (PET), polyvinyl butyral resin (PVB), or the like. The transparent substrate 10 has a light transmittance of more than 80% in a visible light band.

The materials of the first thin film pattern 60 and the first thin film pattern 70 can be selected from any combination of the following: a metal film, a non-metal film, an inorganic metal oxide film, or a non-metal oxide film. The thickness and pattern form of the first thin film pattern 60 and the second thin film pattern 70 may be the same or different. The first thin film pattern 60 and the first thin film pattern 70 may be formed by a thin film etching process or a photoresist lift-off process.

Please refer to FIG. 2 and FIG. 3. FIG. 2 is a flowchart of a method for simultaneously forming a pattern on both sides of a transparent substrate using a thin film etching process according to a first embodiment of the present invention; and FIGS. 3A to 3F are first embodiment of the present invention using thin film etching. Schematic diagram of structural changes in the process of simultaneously forming a pattern on both sides of a transparent substrate.

Step 101: forming a thin film layer on the upper and lower surfaces of the transparent substrate (see FIG. 3A); that is, forming a first thin film layer 62 on the upper surface of the transparent substrate, and simultaneously forming a second thin film on the lower surface of the transparent substrate Layer 72. Wherein, the first thin film layer 62 and the second thin film layer 72 may be formed by physical vapor deposition: sputtering, evaporation, or ion plating; chemical vapor deposition may also be used: plasma enhanced chemical vapor deposition, metal-based chemistry Vapor deposition; or liquid chemical deposition: sol-gel, organic metal cracking, etc. The thickness and pattern form of the first thin film pattern 60 and the second thin film pattern 70 may be the same or different. Preferably, the thickness of the first thin film pattern 60 and the second thin film pattern 70 are different, and the pattern form of the first thin film pattern 60 and the second thin film pattern 70 are different.

Step 102: forming a photoresist layer on the upper and lower thin film layers simultaneously (see FIG. 3B); forming a first photoresist layer 64 on the first thin film layer 62, and simultaneously on the second thin film layer 72 A second photoresist layer 74 is formed by coating.

Step 103: performing exposure (as shown in FIG. 3C); after placing a first photomask 65 on the first photoresist layer 64 and a second photomask 75 on the second photoresist layer 74, exposure is performed simultaneously.

Step 104: Remove the unexposed photoresist layer on both sides at the same time (see FIG. 3D); remove the unexposed first photoresist layer and the second photoresist layer at the same time, so that the first thin film layer is not covered A portion of the first pattern space 66 forms a second pattern space 76 and a portion of the second thin film layer that is not covered forms a second pattern space 76. Using different etching solutions required for the photoresist layer, the pattern space of the photoresist layer can be etched. The pattern space of the photoresist layer will expose the uncovered film layer. It should be noted that, in this first embodiment, although the photoresist layer is described using a negative photoresist material, it should be noted that the photoresist layer may also use a positive photoresist. The difference between using positive and negative photoresist materials is that after the positive photoresist material is exposed, the positive photoresist that shines on the light part will be removed in a subsequent removal action, while the negative photoresist material is exposed to the negative light of the light part after exposure. The resistance remains in the subsequent removal action, but the negative photoresist that does not shine on the light part is removed in the subsequent removal action. That is, in this step, a part of the first photoresist layer and the second photoresist layer on the upper and lower surfaces of the transparent substrate are removed at the same time, and the pattern finally formed using the positive and negative photoresists is For the opposite complement.

Step 105: At the same time, remove the upper and lower uncovered thin film layers (see FIG. 3E); remove the first thin film layer below the first pattern space 66 and the second thin film layer below the second pattern space 76, respectively. . The uncovered thin film layer can be etched using different etching solutions required for the thin film layer.

Step 106: simultaneously remove the remaining photoresist layer on the top and bottom (see FIG. 3F); remove the first photoresist layer to form a first thin film pattern 60 and the second photoresist layer to form a second thin film pattern 70 ;

When exposure is performed in step 103 in this embodiment, the first photoresist layer 64 and the second photoresist layer 74 absorb different light wavelengths. That is, the first photoresist layer 64 and the second photoresist layer 74 absorb light in different light wavelength ranges, so that different patterns are generated on the upper and lower surfaces of the substrate, and they do not affect each other during the exposure process.

In addition, in the first embodiment, in step 106: the remaining photoresist layers on the upper and lower surfaces may not be removed, but hard baking may be adopted to retain the remaining photoresist layers on the upper and lower surfaces (as shown in FIG. 3E) and hard bake Both are formed as permanent materials, and the first thin film pattern 60 and the second thin film pattern 70 may be protected.

Please refer to FIG. 4 and FIG. 5. FIG. 4 is a flowchart of a method for simultaneously forming a pattern on both sides of a transparent substrate using a photoresist lift-off process according to a second embodiment of the present invention. FIGS. 5A to 5E are applications of the second embodiment of the present invention The schematic diagram of the photoresist lift-off process for simultaneously forming a pattern on both sides of a transparent substrate.

Step 111: forming photoresist layers on the upper and lower surfaces of the transparent substrate (as shown in FIG. 5A); coating a top surface of a transparent substrate 10 to form a first photoresist layer 64, and simultaneously coating and forming on the lower surface of the transparent substrate一 second photoresist layer 74.

Step 112: performing exposure (FIG. 5B); placing a first photomask 65 on the first photoresist layer 64 and a second photomask 75 on the second photoresist layer 74, and then performing exposure.

Step 113: Remove the exposed photoresist layer on both sides at the same time (see FIG. 5C); remove the exposed first photoresist layer and the second photoresist layer at the same time, so that the substrate not covered by the first photoresist layer A first pattern space 66 is partially formed, and a second pattern space 76 is formed with a portion of the substrate not covered by the second photoresist layer. Using different etching solutions required for the photoresist layer, the pattern space of the photoresist layer can be etched. The pattern space of the photoresist layer will expose the uncovered substrate. It should be noted that in this second embodiment, although the photoresist layer is described using a negative photoresist material, it should be noted that the photoresist layer may also be used a positive photoresist. The difference between using positive and negative photoresist materials is that after the positive photoresist material is exposed, the positive photoresist that shines on the light part will be removed in a subsequent removal action, while the negative photoresist material is exposed to the negative light of the light part after exposure. The resistance remains in the subsequent removal action, but the negative photoresist that does not shine on the light part is removed in the subsequent removal action. That is, in this step, a part of the first photoresist layer and the second photoresist layer on the upper and lower surfaces of the transparent substrate are simultaneously removed. The resulting pattern using positive and negative photoresist is complementary to the opposite.

Step 114: forming a thin film layer at the same time in the pattern space on the upper and lower surfaces (as shown in FIG. 5D); forming a first thin film layer 62 in the first pattern space 66 and forming a second thin film layer 72 in the second pattern space 76.

Step 115: Remove the remaining photoresist layers on the upper and lower surfaces at the same time (see FIG. 5E); simultaneously remove the exposed first photoresist layer to form a first thin film pattern 60 and the exposed second photoresist layer to form a Second thin film pattern 70. Using different etching solutions required for the photoresist layer, the pattern space of the photoresist layer can be etched.

When exposure is performed at step 112 in this embodiment, the first photoresist layer and the second photoresist layer absorb different light wavelengths. That is, the first photoresist layer 64 and the second photoresist layer 74 absorb light in different light wavelength ranges, so that the exposure of the upper and lower surfaces of the substrate can be performed simultaneously without affecting each other to generate different patterns.

In addition, in this second embodiment, in step 115: the remaining photoresist layers on the upper and lower surfaces may not be removed, but a hard baking method may be adopted to retain the remaining photoresist layers on the upper and lower surfaces (as shown in FIG. 5D) and hard bake. Both are formed as permanent materials, and the first thin film pattern 60 and the second thin film pattern 70 may be protected.

When exposure is performed at step 102 of the first embodiment of the present invention and when exposure is performed at step 112 of the second embodiment of the present invention, the first photoresist layer mainly absorbs light bands below 400 nanometers (nm) Moreover, the second photoresist layer mainly absorbs light bands above 400 nanometers (nm). Preferably, the first photoresist layer mainly absorbs light bands below 400 nanometers (nm), and the second photoresist layer mainly absorbs light bands above 400 nanometers (nm).

Moreover, when performing exposure, a light source is used, and the light source has a first characteristic wavelength and a second characteristic wavelength, wherein the first characteristic wavelength is mainly light below 400 nanometers (nm), and the second The characteristic wavelength is mainly light above 400 nanometers (nm). Preferably, the first characteristic wavelength is between 300 nm and 400 nm, and the second characteristic wavelength is between 400 nm and 500 nm. Here, the light with a characteristic wavelength of the light source means that the light with the characteristic wavelength has a stronger light intensity in a wavelength range than light with other wavelengths. For example, the first characteristic wavelength is mainly light below 400 nanometers (nm). Preferably, the first characteristic wavelength is at 365 nm, that is, the first characteristic wavelength has a wavelength around 365 nm which is higher than other wavelengths. Light has a stronger light intensity. During exposure, the light source may be incident from the upper surface of the transparent substrate 10 or may be incident from the lower surface of the transparent substrate 10.

When performing exposure, light sources from different exposure systems can also be used, that is, a first light source and a second light source. The first light source has a first characteristic wavelength, which is mainly light below 400 nanometers (nm). And the second light source has a light having a second characteristic wavelength mainly above 400 nanometers (nm). Preferably, the first characteristic wavelength is between 300 nanometers (nm) and 400 nanometers (nm), and the second characteristic wavelength is between 400 nanometers (nm) and 500 nanometers (nm). During exposure, the first light source and the second light source may be incident from the same surface of the transparent substrate 10 or may be incident from the upper and lower surfaces of the transparent substrate 10 respectively.

Since the transparent substrate can penetrate light, in order to achieve the requirement of simultaneous exposure, the material composition of the first photoresist layer 64 and the second photoresist layer 74 is different. Therefore, it is performed in step 102 of the first embodiment of the present invention. During exposure and when exposure is performed in step 112 of the embodiment of the second embodiment of the present invention, the first photoresist layer 64 mainly absorbs light bands below 400 nanometers (nm), and the light bands greater than 400 nanometers (nm) There is no reaction; and the second photoresist layer 74 mainly absorbs light bands above 400 nanometers (nm), but has no response to light bands below 400 nanometers (nm). It is also possible that the first photoresist layer 64 mainly absorbs light bands above 400 nanometers (nm), but has no response to light bands less than 400 nanometers (nm), and the second photoresist layer 74 mainly absorbs 400 nanometers ( nm), but no response to light bands larger than 400 nanometers (nm). During the exposure process, the present invention makes the first photoresist layer 64 and the second photoresist layer 74 have different material compositions to absorb light in different light wavelength ranges, so that the exposure of the upper and lower surfaces of the substrate can be performed simultaneously and Do not affect each other to produce different patterns.

Although the photoresist in the present invention may use a positive photoresist or a negative photoresist, preferably, the first photoresist layer and the second photoresist layer of the present invention use a high-resolution negative photoresist. The materials of the first photoresist layer and the second photoresist layer are mainly composed of a polymer resin (Resin), a photoinitiator, a monomer, a solvent (Solvent), and additives (Additives). By adjusting the above composition, the material composition of the first photoresist layer 64 and the second photoresist layer 74 is different to mainly absorb light in different light wavelength ranges.

Among the materials of the first photoresist layer 64 and the second photoresist layer 74, the function of the polymer resin (Resin) is adhesion, developability, pigment dispersibility, flowability, heat resistance, chemical resistance, analysis Capability; the function of the photoinitiator lies in the photosensitivity and resolution; the function of the monomer is adhesion, development, and resolution; the function of the solvent (solvent) lies in viscosity and coating properties; additives The functions of (Additives) are coating, leveling and foaming.

The polymer resin (Resin) may be a polymer or copolymer containing a carboxylic acid group (COOH), such as an acrylic resin, an acrylic-epoxy resin, and an acrylic-melamine ( Melamine) resin, acrylic-styrene (Styrene) resin, phenol-phenolic (Phenolic Aldehyde) resin and other resins, or any combination of the above resins, but not limited to this. The weight percentage of the resin in the photoresist may range from 0.1% to 99%.

The monomers can be divided into water-insoluble and water-soluble monomers. Among them, the water-insoluble monomers can be erythritol triacrylate, trimethyl ether propane triacrylate, and trimethyl ether propane. Trimethacrylate, tris, di-ethanol isocyanate triacrylate, di, trimethylolpropane tetraacrylate, diisopentaerythritol pentaacrylate, pentaacrylate, tetraacetic acid isopentaerythritol; dihexanone hexaacetate Alcohol, diisopentaerythritol hexaacetate, or a polyfunctional monomer, dendritic / multiplex acrylate oligomer, multiplex fluorene polyether acrylate, urethane. Water-soluble monomers can be monomers of Ethoxylated (polyoxyethylene) (EO) base and Propoxylated (polyoxypropylene) (PO); for example: di- (di- (Oxyethylene oxyethylene) vinyl acrylic acid, pentapolyoxyethylene trimethanol propane triacrylate, trioxoethylene di, di-bis-p-phenol methane diacrylate, thirty oxyethylene di, di-double pairs Purpose of phenol methane dimethacrylate, ethoxyethylene trimethanol propane triacrylate, pentaoxyethylene trimethanol propane triacrylate, methyl oxygen 550 oxyethylene monomethacrylate, dioxane Ethylene Diacrylate, Tetraoxyethylene Diacrylate, Tetraoxyethylene Dimethacrylate, Six Peroxyethylene Diacrylate, Six Peroxyethylene Dimethacrylate, Polyoxypropylene Monomethacrylate . Of course, two or more monomers can also be added and mixed to form a co-monomer. The weight percentage of the monomer or comonomer in the photoresist may range from 0.1% to 99%.

The photoinitiator can be selected from acetophenone, Benzophenone or bis-imidazole, Benzoin, Mix Benzyl, α-aminoketone, Acylphosphine oxide, or benzoylformate with any photoinitiator , But not limited to this. The weight percentage of the photoinitiator in the photoresist may range from 0.1 to 10%.

Solvent can be ethylene glycol monopropyl ether, di-ethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, glycol ether (ethyleneglycol monoethyl ether), di-ethylene glycol monomethyl ether, di-ethylene glycol monoethyl ether, di-ethylene glycol monomonomethyl ether -butyl ether, propylene glycol mono-methyl ether acetate, propylene glycol mono-ethyl ether acetate, propylene glycol mono-propyl ether acetate, 3 -Ethyl3-ethoxypropionate, etc., or any mixture of the above solvents, but it is not limited to this. The weight percentage of the solvent in the photoresist may range from 0.1% to 99%.

The additive is generally a pigment dispersant. This is a component that must be added to the photoresist containing the pigment. Generally, it is a non-ionic interface active agent. 0.1 to 5%.

When exposure is performed at step 102 of the first embodiment of the present invention and when exposure is performed at step 112 of the embodiment of the second embodiment of the present invention, it further includes: (1) substrate cleaning (2) Coating, (3) pre-baking, (4) exposure, (5) developing, (6) post-baking and other processing steps.

In particular, since the film pattern of the present invention can be a single-layer film or a multi-layer film. The invention provides a method for simultaneously forming a pattern on both sides of a transparent substrate, and uses a thin film etching or lift-off process to realize the simultaneous formation of a pattern on both sides of a transparent substrate. The process can reduce the steps and costs of the double-sided pattern process of the transparent substrate, and improve the technical efficiency of the process yield.

The above-mentioned embodiments are merely preferred embodiments for fully explaining the present invention, and the protection scope of the present invention is not limited thereto. Equivalent substitutions or changes made by those skilled in the art on the basis of the present invention are all within the protection scope of the present invention. The protection scope of the present invention is subject to the claims.

Claims

A method for simultaneously forming a pattern on both sides of a transparent substrate, comprising:

A transparent substrate, and forming a first thin film layer on an upper surface of the transparent substrate, and simultaneously forming a second thin film layer on a lower surface of the transparent substrate;

Forming a first photoresist layer on the first thin film layer, and simultaneously forming a second photoresist layer on the second thin film layer;

Placing a first photomask on the first photoresist layer, and simultaneously exposing after placing a second photomask on the second photoresist layer;

At the same time, a part of the first photoresist layer and the second photoresist layer on the upper and lower surfaces of the transparent substrate are removed, so that the uncovered portion of the first thin film layer forms a first pattern space and is formed on the second The uncovered portion of the thin film layer forms a second pattern space, wherein if the first photoresist layer and the second photoresist layer use a positive photoresist material, removing a part of the photoresist layer is to remove the first exposed photoresist layer. A photoresist layer and the second photoresist layer, if the first photoresist layer and the second photoresist layer use a negative photoresist material, removing a part of the photoresist layer is to remove the first unexposed photoresist layer A photoresist layer and the second photoresist layer portion;

Simultaneously removing the first thin film layer under the first pattern space and the second thin film layer under the second pattern space; and

Simultaneously removing the remaining first photoresist layer to form a first thin film pattern and the remaining second photoresist layer to form a second thin film pattern;

During the exposure, the first photoresist layer and the second photoresist layer absorb light in different light wavelength ranges.
The method of claim 1, wherein a material of the first photoresist layer and the second photoresist layer is selected from polymers or copolymers containing carboxylic acid groups. And the material composition of the first photoresist layer is different from that of the second photoresist layer.
The method of claim 1, wherein a material of the first photoresist layer and the second photoresist layer is selected from the group consisting of acrylic resin and acrylic -Epoxy resin, acrylic-melamine resin, acrylic-styrene resin or a combination of the above resins.
The method for simultaneously forming a pattern on both sides of a transparent substrate according to claim 1, wherein the first photoresist layer mainly absorbs light wavelengths below 400 nanometers, and the second photoresist layer mainly absorbs wavelengths It is an optical band above 400 nm.
The method for simultaneously forming a pattern on both sides of a transparent substrate according to claim 1, wherein a light source is used when performing exposure, and the light source has a first characteristic wavelength and a second characteristic wavelength, wherein the first A characteristic wavelength is mainly light below 400 nanometers, and the second characteristic wavelength is mainly light above 400 nanometers.
The method for simultaneously forming a pattern on both sides of a transparent substrate according to claim 1, wherein a first light source and a second light source are used when exposing, and the first light source has a first characteristic wavelength, mainly It is light below 400 nanometers, and the second light source has a light having a second characteristic wavelength mainly above 400 nanometers.
A method for simultaneously forming a pattern on both sides of a transparent substrate, comprising:

Forming a first photoresist layer on the upper surface of a transparent substrate, and simultaneously forming a second photoresist layer on the lower surface of the transparent substrate;

Placing a first photomask on the first photoresist layer, and exposing after placing a second photomask on the second photoresist layer;

At the same time, the first photoresist layer and the second photoresist layer on the upper and lower surface portions of the transparent substrate are removed, so that a portion of the substrate not covered by the first photoresist layer forms a first pattern space, and The part of the substrate not covered by the resist layer forms a second pattern space; wherein if the first photoresist layer and the second photoresist layer use a positive photoresist material, removing a part of the photoresist layer is to remove the first exposed photoresist layer. A photoresist layer and the second photoresist layer, if the first photoresist layer and the second photoresist layer use a negative photoresist material, removing a part of the photoresist layer is to remove the first unexposed photoresist layer A photoresist layer and the second photoresist layer portion;

Forming a first thin film layer in the first pattern space and a second thin film layer in the second pattern space; and

Simultaneously removing the remaining first photoresist layer to form a first thin film pattern and the remaining second photoresist layer to form a second thin film pattern;

During the exposure, the first photoresist layer and the second photoresist layer absorb light in different light wavelength ranges.
The method of claim 7, wherein a material of the first photoresist layer and the second photoresist layer is selected from polymers or copolymers containing carboxylic acid groups. And the material composition of the first photoresist layer is different from that of the second photoresist layer.
The method for simultaneously forming a pattern on both sides of a transparent substrate according to claim 7, wherein the material of the first photoresist layer and the second photoresist layer is selected from the group consisting of acrylic resin and acrylic -Epoxy resin, acrylic-melamine resin, acrylic-styrene resin or a combination of the above resins.
The method for simultaneously forming a pattern on both sides of a transparent substrate according to claim 7, wherein the first photoresist layer mainly absorbs light wavelengths below 400 nm, and the second photoresist layer mainly absorbs wavelengths It is an optical band above 400 nm.
The method for simultaneously forming a pattern on both sides of a transparent substrate according to claim 7, wherein a light source is used when exposing, and the light source has a first characteristic wavelength and a second characteristic wavelength, wherein the first A characteristic wavelength is mainly light below 400 nanometers, and the second characteristic wavelength is mainly light above 400 nanometers.
The method for simultaneously forming a pattern on both sides of a transparent substrate according to claim 7, wherein a first light source and a second light source are used when exposing, and the first light source has a first characteristic wavelength, mainly It is light below 400 nanometers, and the second light source has a light having a second characteristic wavelength mainly above 400 nanometers.