TW202113877A - Composition for electromagnetic wave shielding, sheet for electromagnetic wave shielding, sintered body for electromagnetic wave shielding, and electronic component device - Google Patents

Composition for electromagnetic wave shielding, sheet for electromagnetic wave shielding, sintered body for electromagnetic wave shielding, and electronic component device Download PDF

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TW202113877A
TW202113877A TW109133531A TW109133531A TW202113877A TW 202113877 A TW202113877 A TW 202113877A TW 109133531 A TW109133531 A TW 109133531A TW 109133531 A TW109133531 A TW 109133531A TW 202113877 A TW202113877 A TW 202113877A
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electromagnetic wave
wave shielding
metal particles
mass
sintered body
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山岸秀明
増田宏
曽根圭太
須方振一郎
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日商日立化成股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
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    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22C12/00Alloys based on antimony or bismuth

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Abstract

A composition for electromagnetic wave shielding includes a metal particle A, a metal particle B having a lower melting point than the metal particle A, and a resin, in which transient liquid phase sintering between the metal particle A and the metal particle B is possible.

Description

電磁波屏蔽用組成物、電磁波屏蔽用片、電磁波屏蔽用燒結體以及電子零件裝置Electromagnetic wave shielding composition, electromagnetic wave shielding sheet, electromagnetic wave shielding sintered body, and electronic component device

本揭示是有關於一種電磁波屏蔽用組成物、電磁波屏蔽用片、電磁波屏蔽用燒結體以及電子零件裝置。The present disclosure relates to an electromagnetic wave shielding composition, an electromagnetic wave shielding sheet, a sintered body for electromagnetic wave shielding, and an electronic component device.

若不需要的電磁波自外部入射至電子機器,則有可能產生誤動作。因此,電子機器中使用有屏蔽來自外部的不需要的電磁波的電磁波屏蔽材料。If unnecessary electromagnetic waves enter electronic equipment from the outside, malfunctions may occur. Therefore, electronic equipment uses electromagnetic wave shielding materials that shield unnecessary electromagnetic waves from the outside.

許多電磁波屏蔽材料包含金屬,藉由反射電磁波而對電子機器屏蔽電磁波。Many electromagnetic wave shielding materials contain metal, which shields electronic equipment from electromagnetic waves by reflecting electromagnetic waves.

作為現有的電磁波屏蔽材料,可列舉:金屬鍍層、金屬框體、金屬塗料等。然而,金屬鍍層有處理時間長、價格高的傾向。另外,伴隨電子機器的小型化,需要使金屬框體小型化,有金屬框體的加工變難的傾向。Examples of conventional electromagnetic wave shielding materials include metal plating, metal frame, and metal paint. However, metal plating tends to take a long time to process and high prices. In addition, with the miniaturization of electronic devices, it is necessary to reduce the size of the metal frame, and the processing of the metal frame tends to become difficult.

另一方面,金屬塗料包含金屬粒子、樹脂以及溶劑,藉由金屬粒子的接觸而獲得導通。有由金屬塗料形成的塗膜的體積電阻率越低,塗膜的電磁波屏蔽特性越提高的傾向。因此,理想的是藉由使用扁平狀的金屬粒子來增加金屬粒子彼此的接觸點,減低塗膜的體積電阻率(例如,參照專利文獻1)。 [現有技術文獻] [專利文獻]On the other hand, the metal coating contains metal particles, resin, and solvent, and conduction is obtained by the contact of the metal particles. The lower the volume resistivity of the coating film formed of the metallic paint, the more the electromagnetic wave shielding properties of the coating film tend to improve. Therefore, it is desirable to increase the contact points between the metal particles by using flat metal particles to reduce the volume resistivity of the coating film (for example, refer to Patent Document 1). [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2002-150837號公報[Patent Document 1] Japanese Patent Laid-Open No. 2002-150837

[發明所欲解決之課題] 但是,即便使用扁平狀的金屬粒子,於減低塗膜的體積電阻率方面亦有極限。作為減低塗膜的體積電阻率的其他方法,可考慮增加金屬粒子的添加量來增加金屬粒子彼此的接點的方法,但金屬粒子的添加量亦有極限,有時難以呈現出所要求的特性。 本揭示是鑑於所述現有情況而成,其目的在於提供一種能夠形成電磁波屏蔽效果優異的電磁波屏蔽用燒結體的電磁波屏蔽用組成物、以及使用該電磁波屏蔽用組成物的電磁波屏蔽用片、電磁波屏蔽用燒結體以及電子零件裝置。[The problem to be solved by the invention] However, even if flat metal particles are used, there is a limit in reducing the volume resistivity of the coating film. As another method of reducing the volume resistivity of the coating film, a method of increasing the amount of metal particles added to increase the contact points between the metal particles can be considered. However, the amount of metal particles added also has a limit, and sometimes it is difficult to exhibit the required characteristics. The present disclosure is made in view of the above-mentioned existing situation, and its object is to provide an electromagnetic wave shielding composition capable of forming a sintered body for electromagnetic wave shielding with excellent electromagnetic wave shielding effect, and an electromagnetic wave shielding sheet and electromagnetic wave shielding sheet using the electromagnetic wave shielding composition Sintered body for shielding and electronic component device.

[解決課題之手段] 用於達成所述課題的具體的手段為如下所述。 <1> 一種電磁波屏蔽用組成物,含有金屬粒子A、熔點比所述金屬粒子A低的金屬粒子B、以及樹脂,且 於所述金屬粒子A與所述金屬粒子B之間能夠進行暫態液相燒結。 <2> 如<1>所述的電磁波屏蔽用組成物,其中所述金屬粒子B的熔點為300℃以下。 <3> 如<1>或<2>所述的電磁波屏蔽用組成物,其中所述金屬粒子A包含Cu,所述金屬粒子B包含Sn。 <4> 如<3>所述的電磁波屏蔽用組成物,其中以質量基準計,Cu於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率與Sn於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率的比(Cu含有率/Sn含有率)為0.6~21。 <5> 如<3>所述的電磁波屏蔽用組成物,其中以質量基準計,Cu於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率與Sn於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率的比(Cu含有率/Sn含有率)為1.6~64。 <6> 如<3>至<5>中任一項所述的電磁波屏蔽用組成物,其中所述金屬粒子B進而包含Bi,且 以質量基準計,Cu於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率與Bi於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率的比(Cu含有率/Bi含有率)為1.1~44。 <7> 如<1>至<6>中任一項所述的電磁波屏蔽用組成物,其中所述金屬粒子A及所述金屬粒子B於固體成分整體中所佔的合計比例為96質量%以下。 <8> 如<1>至<7>中任一項所述的電磁波屏蔽用組成物,其中所述樹脂包含熱硬化性樹脂。 <9> 如<8>所述的電磁波屏蔽用組成物,進而含有硬化劑。 <10> 如<8>或<9>所述的電磁波屏蔽用組成物,進而含有硬化促進劑。 <11> 如<1>至<10>中任一項所述的電磁波屏蔽用組成物,進而含有助焊劑成分。 <12> 如<11>所述的電磁波屏蔽用組成物,其中所述助焊劑成分含有松香及活性劑的至少一者。 <13> 如<12>所述的電磁波屏蔽用組成物,其中所述松香包含2,2-雙(羥基甲基)丙酸,所述活性劑包含三乙醇胺。 <14> 如<11>所述的電磁波屏蔽用組成物,其中於將所述助焊劑成分發生相變的溫度設為α(℃)、將所述金屬粒子B的熔點設為β(℃)時,所述助焊劑成分滿足β-20≦α≦β+20。 <15> 如<14>所述的電磁波屏蔽用組成物,其中所述助焊劑成分發生相變的溫度為130℃~160℃。 <16> 如<14>或<15>所述的電磁波屏蔽用組成物,其中所述助焊劑成分為選自由丙酸、4-胺基水楊酸及3-(苄基胺基)丙酸乙酯所組成的群組中的至少一種。 <17> 如<1>至<16>中任一項所述的電磁波屏蔽用組成物,進而含有溶劑。 <18> 一種電磁波屏蔽用片,具有包含如<1>至<17>中任一項所述的電磁波屏蔽用組成物的樹脂組成物層。 <19> 一種電磁波屏蔽用燒結體,其為如<1>至<17>中任一項所述的電磁波屏蔽用組成物或如<18>所述的電磁波屏蔽用片的燒結體。 <20> 如<19>所述的電磁波屏蔽用燒結體,其中體積電阻率為3×10-4 Ω·cm以下。 <21> 一種電子零件裝置,具有由如<19>或<20>所述的電磁波屏蔽用燒結體覆蓋的區域。[Means for Solving the Problem] The specific means for achieving the above-mentioned problem are as follows. <1> An electromagnetic wave shielding composition containing metal particles A, metal particles B having a lower melting point than the metal particles A, and resin, and capable of performing a transient state between the metal particles A and the metal particles B Liquid phase sintering. <2> The electromagnetic wave shielding composition according to <1>, wherein the melting point of the metal particles B is 300°C or less. <3> The electromagnetic wave shielding composition according to <1> or <2>, wherein the metal particles A include Cu, and the metal particles B include Sn. <4> The electromagnetic wave shielding composition according to <3>, wherein the content ratio of Cu in the whole of the metal particles A and the metal particles B and Sn in the metal particles on a mass basis The ratio of the content ratio (Cu content ratio/Sn content ratio) occupied by the whole of A and the metal particles B is 0.6-21. <5> The electromagnetic wave shielding composition according to <3>, wherein the content ratio of Cu in the whole of the metal particles A and the metal particles B and the content of Sn in the metal particles on a mass basis The ratio of the content ratio (Cu content ratio/Sn content ratio) occupied by the whole of A and the metal particles B is 1.6 to 64. <6> The electromagnetic wave shielding composition according to any one of <3> to <5>, wherein the metal particle B further contains Bi, and Cu is contained in the metal particle A and the metal particle A on a mass basis. The ratio (Cu content/Bi content) of the content ratio of the entire metal particle B to the content ratio of Bi in the entire metal particle A and the metal particle B (Cu content/Bi content) is 1.1 to 44. <7> The electromagnetic wave shielding composition according to any one of <1> to <6>, wherein the total ratio of the metal particles A and the metal particles B in the total solid content is 96% by mass the following. <8> The electromagnetic wave shielding composition according to any one of <1> to <7>, wherein the resin contains a thermosetting resin. <9> The electromagnetic wave shielding composition as described in <8> further contains a curing agent. <10> The electromagnetic wave shielding composition as described in <8> or <9> further contains a hardening accelerator. <11> The composition for electromagnetic wave shielding as described in any one of <1> to <10> further contains a flux component. <12> The electromagnetic wave shielding composition according to <11>, wherein the flux component contains at least one of rosin and an activator. <13> The electromagnetic wave shielding composition according to <12>, wherein the rosin contains 2,2-bis(hydroxymethyl)propionic acid, and the active agent contains triethanolamine. <14> The electromagnetic wave shielding composition according to <11>, wherein the temperature at which the flux component undergoes a phase change is α (°C), and the melting point of the metal particles B is β (°C) At this time, the flux composition satisfies β-20≦α≦β+20. <15> The electromagnetic wave shielding composition according to <14>, wherein the temperature at which the flux component undergoes a phase change is 130°C to 160°C. <16> The composition for electromagnetic wave shielding as described in <14> or <15>, wherein the flux component is selected from propionic acid, 4-aminosalicylic acid and 3-(benzylamino)propionic acid At least one of the group consisting of ethyl esters. <17> The electromagnetic wave shielding composition as described in any one of <1> to <16> further contains a solvent. <18> An electromagnetic wave shielding sheet having a resin composition layer containing the electromagnetic wave shielding composition according to any one of <1> to <17>. <19> A sintered body for electromagnetic wave shielding, which is a sintered body of the electromagnetic wave shielding composition described in any one of <1> to <17> or the electromagnetic wave shielding sheet described in <18>. <20> The sintered body for electromagnetic wave shielding as described in <19>, wherein the volume resistivity is 3×10 -4 Ω·cm or less. <21> An electronic component device having an area covered by the sintered body for electromagnetic wave shielding as described in <19> or <20>.

[發明的效果] 根據本揭示,可提供一種能夠形成電磁波屏蔽效果優異的電磁波屏蔽用燒結體的電磁波屏蔽用組成物、以及使用該電磁波屏蔽用組成物的電磁波屏蔽用片、電磁波屏蔽用燒結體以及電子零件裝置。[Effects of the invention] According to the present disclosure, it is possible to provide an electromagnetic wave shielding composition capable of forming an electromagnetic wave shielding sintered body with excellent electromagnetic wave shielding effect, and an electromagnetic wave shielding sheet, an electromagnetic wave shielding sintered body, and an electronic component device using the electromagnetic wave shielding composition.

以下,對用於實施本揭示的形態進行詳細說明。其中,本揭示並不限定於以下的實施形態。於以下的實施形態中,關於其構成要素(亦包括要素步驟等),除了特別明示的情況,並非必需。關於數值及其範圍亦同樣如此,並不限制本揭示。Hereinafter, a mode for implementing the present disclosure will be described in detail. However, this disclosure is not limited to the following embodiments. In the following embodiments, the constituent elements (including element steps, etc.) are not essential unless otherwise specified. The same is true for the numerical value and its range, which does not limit the present disclosure.

於本揭示中,「步驟」的用語中,除了包括與其他步驟獨立的步驟以外,即便於無法與其他步驟明確區別的情況下,只要達成該步驟的目的,則亦包括該步驟。 於本揭示中,使用「~」表示的數值範圍中包含「~」的前後所記載的數值分別作為最小值及最大值。 於本揭示中階段性地記載的數值範圍中,一個數值範圍內所記載的上限值或下限值亦可置換為其他階段性記載的數值範圍的上限值或下限值。另外,於本揭示中所記載的數值範圍中,該數值範圍的上限值或下限值亦可置換為實施例中所示的值。 於本揭示中,各成分中亦可包含多種相當的物質。於在組成物中存在多種相當於各成分的物質的情況下,各成分的含有率只要並無特別說明,則是指組成物中所存在的該多種物質的合計含有率。 於本揭示中,在相當於各成分的粒子中亦可包含多種粒子。於在組成物中存在多種相當於各成分的粒子的情況下,只要並無特別說明,則各成分的粒子徑是指與組成物中所存在的該多種粒子的混合物相關的值。 於本揭示中,「層」或「膜」的用語中,在觀察該層或膜所存在的區域時,除了包含形成於該區域的整體的情況以外,亦包含僅形成於該區域的一部分的情況。 於本揭示中,層或膜的平均厚度是對作為對象的層或膜的5點的厚度進行測定,並設為以其算術平均值的形式給出的值。 層或膜的厚度可使用測微計(micrometer)等進行測定。於本揭示中,在能夠直接測定層或膜的厚度的情況下,使用測微計進行測定。另一方面,於對一個層的厚度或多個層的總厚度進行測定的情況下,亦可藉由使用電子顯微鏡觀察測定對象的剖面來進行測定。 於本揭示中,所謂「固體成分」,是指自電磁波屏蔽用組成物去除溶劑成分後的剩餘部分。關於電磁波屏蔽用組成物中的溶劑的含有率,可藉由對電磁波屏蔽用組成物的揮發成分應用氣相層析質量分析(Gas Chromatography/Mass Spectrometry,GC/MS)等分析方法來求出。再者,於判明電磁波屏蔽用組成物的組成的情況下,亦可根據電磁波屏蔽用組成物的組成來求出溶劑的含有率。藉由將溶劑的含有率乘以電磁波屏蔽用組成物的質量,來求出電磁波屏蔽用組成物的剩餘部分的比例。In the present disclosure, the term "step" includes a step that is independent of other steps, even if it cannot be clearly distinguished from other steps, as long as the purpose of the step is achieved, the step is also included. In the present disclosure, the numerical range indicated by "~" includes the numerical values described before and after "~" as the minimum value and the maximum value, respectively. In the numerical ranges described stepwise in this disclosure, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of another numerical range described stepwise. In addition, in the numerical range described in the present disclosure, the upper limit or lower limit of the numerical range can be replaced with the values shown in the examples. In the present disclosure, each component may also contain multiple equivalent substances. When there are multiple types of substances corresponding to each component in the composition, the content rate of each component refers to the total content rate of the multiple types of substances present in the composition, unless otherwise specified. In the present disclosure, a plurality of particles may be included in the particles corresponding to each component. When there are multiple types of particles corresponding to each component in the composition, unless otherwise specified, the particle diameter of each component refers to a value related to the mixture of the multiple types of particles present in the composition. In the present disclosure, the term "layer" or "film" when observing the area in which the layer or film exists, in addition to the case where the entirety is formed in the area, it also includes only a part of the area. Happening. In this disclosure, the average thickness of a layer or film is measured at 5 points of the target layer or film, and is set to a value given as an arithmetic average value thereof. The thickness of the layer or film can be measured using a micrometer or the like. In the present disclosure, when the thickness of the layer or the film can be directly measured, the measurement is performed using a micrometer. On the other hand, in the case of measuring the thickness of one layer or the total thickness of a plurality of layers, the measurement can also be carried out by observing the cross section of the measurement target using an electron microscope. In the present disclosure, the "solid content" refers to the remaining part after removing the solvent component from the electromagnetic wave shielding composition. The solvent content in the electromagnetic wave shielding composition can be determined by applying an analysis method such as Gas Chromatography/Mass Spectrometry (GC/MS) to the volatile components of the electromagnetic wave shielding composition. Furthermore, when the composition of the electromagnetic wave shielding composition is ascertained, the content of the solvent can also be determined from the composition of the electromagnetic wave shielding composition. The ratio of the remaining part of the electromagnetic wave shielding composition is obtained by multiplying the solvent content rate by the mass of the electromagnetic wave shielding composition.

<電磁波屏蔽用組成物> 本揭示的電磁波屏蔽用組成物含有金屬粒子A、熔點比所述金屬粒子A低的金屬粒子B、以及樹脂,且於所述金屬粒子A與所述金屬粒子B之間能夠進行暫態液相燒結。電磁波屏蔽用組成物亦可含有所述成分以外的其他成分。 根據本揭示的電磁波屏蔽用組成物,可利用於金屬粒子A與金屬粒子B之間產生的暫態液相燒結,並藉由加熱而形成金屬粒子A與金屬粒子B的燒結體。與金屬粒子彼此進行接觸的情況相比較,所形成的燒結體有界面電阻低、導電性優異的傾向。結果,推測使用本揭示的電磁波屏蔽用組成物形成的電磁波屏蔽用燒結體的體積電阻率低,電磁波屏蔽效果優異。<Composition for electromagnetic wave shielding> The electromagnetic wave shielding composition of the present disclosure contains metal particles A, metal particles B having a lower melting point than the metal particles A, and resin, and is capable of undergoing a transient liquid phase between the metal particles A and the metal particles B. sintering. The electromagnetic wave shielding composition may contain components other than the above-mentioned components. According to the electromagnetic wave shielding composition of the present disclosure, the transient liquid phase sintering generated between the metal particle A and the metal particle B can be used to form a sintered body of the metal particle A and the metal particle B by heating. Compared with the case where metal particles are in contact with each other, the formed sintered body tends to have low interface resistance and excellent conductivity. As a result, it is estimated that the sintered body for electromagnetic wave shielding formed using the electromagnetic wave shielding composition of the present disclosure has low volume resistivity and excellent electromagnetic wave shielding effect.

以下,對構成本揭示的電磁波屏蔽用組成物的成分進行詳細說明。Hereinafter, the components constituting the electromagnetic wave shielding composition of the present disclosure will be described in detail.

(金屬粒子) 本揭示的電磁波屏蔽用組成物含有金屬粒子A、以及熔點比金屬粒子A低的金屬粒子B。於金屬粒子A及金屬粒子B之間,能夠進行暫態液相燒結。 本揭示中的「暫態液相燒結」亦被稱為Transient Liquid Phase Sintering(TLPS),是指如下現象:藉由熔點不同的金屬中熔點相對低的金屬(低熔點金屬)的粒子界面中的因加熱而引起的向液相的轉變、以及熔點相對高的金屬(高熔點金屬)向所述液相的反應擴散,而進行基於兩金屬的金屬化合物的生成(合金化)。利用該現象,可獲得能夠於低溫下進行燒結、且燒結後的熔點高的燒結體。 另外,於本揭示中的「暫態液相燒結」中,只要金屬粒子A及金屬粒子B中所含的至少一部分金屬成分能夠進行燒結即可,無需所有的金屬成分均能夠進行燒結。例如,金屬粒子B亦可包含Bi等無助於燒結時的反應的金屬成分。(Metal particles) The electromagnetic wave shielding composition of the present disclosure contains metal particles A and metal particles B having a lower melting point than metal particles A. Between the metal particles A and the metal particles B, transient liquid phase sintering can be performed. The “transient liquid phase sintering” in this disclosure is also called Transient Liquid Phase Sintering (TLPS), which refers to the following phenomenon: the metal with different melting points (low melting point metal) in the particle interface The transition to the liquid phase caused by heating and the reactive diffusion of a metal with a relatively high melting point (a high melting point metal) into the liquid phase progresses the formation (alloying) of a metal compound based on the two metals. Utilizing this phenomenon, a sintered body that can be sintered at a low temperature and has a high melting point after sintering can be obtained. In addition, in the "transient liquid phase sintering" in the present disclosure, as long as at least a part of the metal components contained in the metal particles A and the metal particles B can be sintered, it is not necessary that all the metal components can be sintered. For example, the metal particles B may contain a metal component that does not contribute to the reaction at the time of sintering, such as Bi.

作為能夠進行暫態液相燒結的金屬成分,可列舉能夠進行暫態液相燒結的熔點不同的金屬的組合(低熔點金屬與高熔點金屬的組合)。能夠進行暫態液相燒結的金屬的組合並無特別限定,例如可列舉:低熔點金屬與高熔點金屬分別為Sn與Cu的組合、分別為Zn與Cu的組合、分別為In與Au的組合、分別為Sn與Co的組合、以及分別為Sn與Ni的組合。能夠進行暫態液相燒結的金屬的組合可為兩種金屬的組合,亦可為三種以上的金屬的組合。As a metal component capable of transient liquid phase sintering, a combination of metals with different melting points capable of transient liquid phase sintering (combination of a low melting point metal and a high melting point metal) can be cited. The combination of metals that can be subjected to transient liquid phase sintering is not particularly limited. Examples include: low-melting-point metals and high-melting-point metals: a combination of Sn and Cu, a combination of Zn and Cu, and a combination of In and Au. , Respectively are the combination of Sn and Co, and respectively are the combination of Sn and Ni. The combination of metals capable of transient liquid phase sintering may be a combination of two metals, or a combination of three or more metals.

就燒結後的接著強度的觀點而言,金屬粒子A的熔點較佳為高於300℃,更佳為500℃以上,進而佳為800℃以上。本揭示的電磁波屏蔽用組成物可包含兩種以上的金屬粒子A,例如,可包含熔點均高於300℃的兩種以上的金屬粒子A。 就促進燒結時向液相的轉變的觀點而言,金屬粒子B的熔點較佳為300℃以下,更佳為250℃以下,進而佳為200℃以下,特佳為150℃以下。本揭示的電磁波屏蔽用組成物亦可包含兩種以上的金屬粒子B,例如亦可包含熔點均為300℃以下的兩種以上的金屬粒子B。From the viewpoint of the adhesive strength after sintering, the melting point of the metal particles A is preferably higher than 300°C, more preferably 500°C or higher, and still more preferably 800°C or higher. The electromagnetic wave shielding composition of the present disclosure may include two or more kinds of metal particles A, for example, may include two or more kinds of metal particles A each having a melting point higher than 300°C. From the viewpoint of promoting the transition to the liquid phase during sintering, the melting point of the metal particles B is preferably 300°C or lower, more preferably 250°C or lower, still more preferably 200°C or lower, and particularly preferably 150°C or lower. The electromagnetic wave shielding composition of the present disclosure may also include two or more kinds of metal particles B, for example, two or more kinds of metal particles B having a melting point of 300° C. or less.

金屬粒子A及金屬粒子B的具體的實施方式並無特別限制。於某實施方式中,可為金屬粒子A及金屬粒子B分別為金屬的單質的狀態,亦可為金屬粒子A及金屬粒子B的一者或兩者為合金的狀態。 作為較佳的實施方式,為金屬粒子A為金屬單質的狀態,金屬粒子B為合金的狀態。The specific embodiment of the metal particle A and the metal particle B is not specifically limited. In a certain embodiment, the metal particle A and the metal particle B may be in a state where the metal particle A and the metal particle B are a simple metal, respectively, or one or both of the metal particle A and the metal particle B may be in an alloy state. As a preferred embodiment, the metal particle A is in the state of a simple metal, and the metal particle B is in the state of an alloy.

另外,於某實施方式中,金屬粒子A及金屬粒子B分別可僅包含一種金屬,亦可包含兩種以上的金屬。於金屬粒子A或金屬粒子B包含兩種以上的金屬的情況下,該金屬粒子可為包含兩種以上的金屬各者的金屬粒子的組合(混合物),亦可兩種以上的金屬包含於相同的金屬粒子中,亦可為該些的組合。In addition, in a certain embodiment, each of the metal particles A and the metal particles B may include only one type of metal, or may include two or more types of metals. When the metal particle A or the metal particle B contains two or more metals, the metal particle may be a combination (mixture) of metal particles containing two or more metals, or two or more metals may be contained in the same In the metal particles of, it can also be a combination of these.

於相同的金屬粒子中含有兩種以上的金屬的金屬粒子的構成並無特別限制。例如,可為包含兩種以上的金屬的合金的金屬粒子,亦可為由兩種以上的金屬的單質構成的金屬粒子。由兩種以上的金屬的單質構成的金屬粒子例如可藉由在包含其中一金屬的金屬粒子的表面,利用鍍敷、蒸鍍等形成包含另一金屬的層而獲得。另外,亦可藉由如下方法、即、在包含其中一金屬的金屬粒子的表面,於高速氣流中使用以衝擊力為主體的力以乾式賦予包含另一金屬的粒子並使兩者複合化的方法,而獲得於相同的金屬粒子中含有兩種以上的金屬的金屬粒子。The structure of the metal particles containing two or more kinds of metals in the same metal particle is not particularly limited. For example, it may be a metal particle composed of an alloy of two or more metals, or a metal particle composed of a simple substance of two or more metals. Metal particles composed of simple substances of two or more metals can be obtained, for example, by forming a layer including another metal on the surface of a metal particle including one metal by plating, vapor deposition, or the like. In addition, the following method can also be used to dryly apply impact force on the surface of metal particles containing one metal in a high-speed airflow to particles containing another metal and combine the two Method to obtain metal particles containing two or more metals in the same metal particles.

作為金屬粒子A,較佳為包含選自由Cu、Au、Ag、Co、Ni及Fe所組成的群組中的至少一種的金屬粒子,更佳為Cu、Au、Ag、Co、Ni或Fe的粒子。 作為金屬粒子B,較佳為包含Sn、Zn或In的金屬粒子,更佳為包含Sn、Zn或In、及後述的金屬成分X的合金粒子。As the metal particle A, it is preferable to include at least one metal particle selected from the group consisting of Cu, Au, Ag, Co, Ni and Fe, more preferably one of Cu, Au, Ag, Co, Ni or Fe particle. The metal particles B are preferably metal particles containing Sn, Zn, or In, and more preferably alloy particles containing Sn, Zn, or In, and a metal component X described later.

作為金屬粒子A與熔點比金屬粒子A低的金屬粒子B的組合(金屬粒子A、金屬粒子B),例如可列舉:(包含Cu的金屬粒子、包含Sn的金屬粒子)、(包含Cu的金屬粒子、包含Zn的金屬粒子)、(包含Au的金屬粒子、包含In的金屬粒子)、(包含Co的金屬粒子、包含Sn的金屬粒子)及(包含Ni的金屬粒子、包含Sn的金屬粒子)。 於金屬粒子A與金屬粒子B的組合為包含Cu的金屬粒子與包含Sn的金屬粒子的組合的情況下,藉由包含Cu的金屬粒子及包含Sn的金屬粒子的至少一者含有Ag及Ni的至少一者,有可抑制銅錫合金的粒界徑增加的傾向。Examples of combinations of metal particles A and metal particles B having a lower melting point than metal particles A (metal particles A, metal particles B) include: (metal particles containing Cu, metal particles containing Sn), (metal particles containing Cu Particles, metal particles containing Zn), (metal particles containing Au, metal particles containing In), (metal particles containing Co, metal particles containing Sn), and (metal particles containing Ni, metal particles containing Sn) . In the case where the combination of metal particles A and metal particles B is a combination of metal particles containing Cu and metal particles containing Sn, at least one of the metal particles containing Cu and the metal particles containing Sn contains Ag and Ni. At least one of them has a tendency to suppress the increase in the grain size of the copper-tin alloy.

就降低能夠進行暫態液相燒結的溫度的觀點而言,金屬粒子B較佳為包含選自由Bi、In、Zn、Cd、Pb、Ag及Cu所組成的群組中的至少一種金屬成分X,進而佳為包含Sn、且包含金屬成分X。 再者,於金屬粒子B包含Zn的情況下,金屬成分X較佳為包含選自由Bi、In、Cd、Pb、Ag及Cu所組成的群組中的至少一種,於金屬粒子B包含In的情況下,金屬成分X較佳為包含選自由Bi、Zn、Cd、Pb、Ag及Cu所組成的群組中的至少一種。From the viewpoint of lowering the temperature at which transient liquid phase sintering can be performed, the metal particles B preferably include at least one metal component X selected from the group consisting of Bi, In, Zn, Cd, Pb, Ag, and Cu It is more preferable to include Sn and the metal component X. Furthermore, when the metal particles B include Zn, the metal component X preferably includes at least one selected from the group consisting of Bi, In, Cd, Pb, Ag, and Cu. Where the metal particles B include In In this case, the metal component X preferably includes at least one selected from the group consisting of Bi, Zn, Cd, Pb, Ag, and Cu.

金屬成分X更佳為包含選自由Bi、In、Zn、Cd、Ag及Cu所組成的群組中的至少一種,就進一步降低能夠進行暫態液相燒結的溫度的觀點而言,進而佳為包含選自由Bi、In、Zn及Cd所組成的群組中的至少一種。The metal component X more preferably contains at least one selected from the group consisting of Bi, In, Zn, Cd, Ag, and Cu, and from the viewpoint of further lowering the temperature at which transient liquid phase sintering can be performed, it is still more preferable Contains at least one selected from the group consisting of Bi, In, Zn, and Cd.

關於金屬粒子B,就降低能夠進行暫態液相燒結的溫度的觀點及適宜降低電磁波屏蔽用燒結體的體積電阻率的觀點而言,金屬成分X於金屬粒子B的整體中所佔的比例較佳為3質量%~80質量%,更佳為5質量%~15質量%、20質量%~30質量%、或50質量%~60質量%。Regarding the metal particles B, from the viewpoint of lowering the temperature at which transient liquid phase sintering is possible and the viewpoint of suitably reducing the volume resistivity of the sintered body for electromagnetic wave shielding, the ratio of the metal component X to the whole of the metal particles B is relatively high. It is preferably 3% by mass to 80% by mass, more preferably 5% by mass to 15% by mass, 20% by mass to 30% by mass, or 50% by mass to 60% by mass.

作為金屬粒子B為包含Sn的合金狀態時的例子,可列舉:SnBi合金、SnIn合金、SnZn合金、SnPb合金、SnCd合金等。其中,就降低能夠進行暫態液相燒結的溫度的觀點而言,較佳為SnBi合金。Examples of the case where the metal particles B are in an alloy state containing Sn include SnBi alloy, SnIn alloy, SnZn alloy, SnPb alloy, SnCd alloy, and the like. Among them, from the viewpoint of lowering the temperature at which transient liquid phase sintering can be performed, a SnBi alloy is preferable.

於某實施方式中,較佳為金屬粒子A包含Cu(熔點:1085℃)、金屬粒子B包含Sn(熔點:232℃),較佳為金屬粒子A包含Cu(熔點:1085℃)、金屬粒子B為包含Sn的合金(熔點:小於232℃,例如138℃)。Cu與Sn藉由燒結而生成銅-錫金屬化合物(Cu6 Sn5 )。由於該生成反應是於150℃附近進行,因此能夠利用回焊爐等一般的設備進行燒結。In an embodiment, it is preferable that the metal particle A contains Cu (melting point: 1085°C), and the metal particle B contains Sn (melting point: 232°C), and it is preferable that the metal particle A contains Cu (melting point: 1085°C) and metal particles. B is an alloy containing Sn (melting point: less than 232°C, for example, 138°C). Cu and Sn are sintered to produce a copper-tin metal compound (Cu 6 Sn 5 ). Since this formation reaction proceeds at around 150°C, it can be sintered using general equipment such as a reflow furnace.

於某實施方式中,可使用Cu粒子作為金屬粒子A,使用包含Su的合金粒子作為金屬粒子B。作為Sn為合金狀態時的例子,可列舉:包含Su、Ag及Cu的合金(SAC)、包含Sn與Bi的合金(SnBi)等。 SnBi合金的組成並無特別限制,例如可列舉Sn-Bi58。於本揭示中,由Sn-XA表示的合金表示於包含Sn的合金中包含A質量%的元素X。由Sn-Bi58表示的合金的熔點(液相轉變溫度)為約138℃。In a certain embodiment, Cu particles can be used as the metal particles A, and alloy particles containing Su can be used as the metal particles B. As an example when Sn is in an alloy state, an alloy containing Su, Ag, and Cu (SAC), an alloy containing Sn and Bi (SnBi), and the like can be cited. The composition of the SnBi alloy is not particularly limited, and for example, Sn-Bi58 can be cited. In the present disclosure, the alloy represented by Sn-XA means that the Sn-containing alloy contains A by mass% of the element X. The melting point (liquid phase transition temperature) of the alloy represented by Sn-Bi58 is about 138°C.

於金屬粒子A包含Cu、金屬粒子B包含Sn的情況下,在某實施方式中,以質量基準計,Cu於金屬粒子A及金屬粒子B的整體中所佔的含有率與Sn於金屬粒子A及金屬粒子B的整體中所佔的含有率的比(Cu含有率/Sn含有率)較佳為0.6~21,更佳為0.8~9.5,進而佳為1.0~5.6。When the metal particle A contains Cu and the metal particle B contains Sn, in a certain embodiment, on a mass basis, the content ratio of Cu in the whole of the metal particle A and the metal particle B is the same as that of Sn in the metal particle A. It is preferable that it is 0.6-21, More preferably, it is 0.8-9.5, and, as for the ratio (Cu content/Sn content) which occupies the content rate in the whole metal particle B, it is further more preferable that it is 1.0-5.6.

於金屬粒子A包含Cu、金屬粒子B包含Sn、且金屬粒子A的平均粒子徑為2 μm~8 μm的情況下,比(Cu含有率/Sn含有率)較佳為1.5~64,更佳為20~50,進而佳為25~40。若比(Cu含有率/Sn含有率)為25~64的範圍內,則有能夠形成體積電阻率的耐溫度循環特性優異的燒結體的傾向。 另一方面,於金屬粒子A包含Cu、金屬粒子B包含Sn、且金屬粒子A的平均粒子徑為0.1 μm~0.5 μm的情況下,比(Cu含有率/Sn含有率)較佳為0.6~2.0,更佳為0.9~1.8,進而佳為1.2~1.6。若比(Cu含有率/Sn含有率)為1.5~1.7的範圍內,則有能夠形成體積電阻率的耐溫度循環特性優異的燒結體的傾向。When the metal particle A contains Cu, the metal particle B contains Sn, and the average particle diameter of the metal particle A is 2 μm to 8 μm, the ratio (Cu content rate/Sn content rate) is preferably 1.5 to 64, more preferably It is 20-50, More preferably, it is 25-40. If the ratio (Cu content/Sn content) is in the range of 25 to 64, there is a tendency that a sintered body having excellent volume resistivity and temperature cycle resistance can be formed. On the other hand, when the metal particle A contains Cu, the metal particle B contains Sn, and the average particle diameter of the metal particle A is 0.1 μm to 0.5 μm, the ratio (Cu content/Sn content) is preferably 0.6 to 2.0, more preferably 0.9 to 1.8, still more preferably 1.2 to 1.6. If the ratio (Cu content/Sn content) is in the range of 1.5 to 1.7, there is a tendency that a sintered body having excellent volume resistivity and temperature cycle resistance can be formed.

另外,於某實施方式中,比(Cu含有率/Sn含有率)較佳為1.6~64,更佳為1.7~40,進而佳為1.8~21。 若比(Cu含有率/Sn含有率)為1.6~64的範圍內,則有能夠形成體積電阻率的耐溫度循環特性優異的燒結體的傾向。 其理由並不明確,如以下般進行推測。 推測:若比(Cu含有率/Sn含有率)為1.6~64的範圍,則以質量基準計的Cu於金屬粒子A及金屬粒子B的整體中所佔的含有率比Sn於金屬粒子A及金屬粒子B的整體中所佔的含有率充分多,因此,於在金屬粒子A與金屬粒子B之間產生暫態液相燒結時未反應的Sn成分不易殘留於燒結體中。 此處,若於金屬粒子A與金屬粒子B之間產生暫態液相燒結,則於銅的周圍產生銅錫合金,因此銅錫合金的粒界徑依存於銅的粒徑。假設燒結體中存在許多未反應的Sn成分,則於將燒結體供於溫度循環試驗時,在未反應的Sn成分與銅錫合金之間進行相互擴散,銅錫合金的粒界彼此結合,銅錫合金的粒界徑逐漸變大,藉此於燒結體中產生空隙,燒結體中的金屬的填充率降低,有引起體積電阻率的上升的可能性。 藉由將比(Cu含有率/Sn含有率)設為1.6~64的範圍,而燒結體中的Sn成分的殘留量減低,因此燒結體中的金屬的填充率的降低得到抑制,能夠形成體積電阻率的耐溫度循環特性優異的燒結體。In addition, in a certain embodiment, the ratio (Cu content/Sn content) is preferably 1.6 to 64, more preferably 1.7 to 40, and still more preferably 1.8 to 21. If the ratio (Cu content/Sn content) is in the range of 1.6 to 64, there is a tendency that a sintered body having excellent volume resistivity and temperature cycle resistance can be formed. The reason is not clear, but it is estimated as follows. It is estimated that if the ratio (Cu content/Sn content) is in the range of 1.6 to 64, the content ratio of Cu in the whole of metal particles A and B on a mass basis is higher than that of Sn in metal particles A and The content of the metal particles B as a whole is sufficiently high. Therefore, when transient liquid phase sintering occurs between the metal particles A and the metal particles B, unreacted Sn components are unlikely to remain in the sintered body. Here, if transient liquid phase sintering occurs between the metal particle A and the metal particle B, a copper-tin alloy is generated around the copper, so the grain boundary diameter of the copper-tin alloy depends on the copper particle diameter. Assuming that there are many unreacted Sn components in the sintered body, when the sintered body is subjected to the temperature cycle test, the unreacted Sn components and the copper-tin alloy will diffuse mutually, and the grain boundaries of the copper-tin alloy will be bonded to each other. The grain boundary diameter of the tin alloy gradually increases, whereby voids are generated in the sintered body, and the filling rate of the metal in the sintered body decreases, which may cause an increase in the volume resistivity. By setting the ratio (Cu content rate/Sn content rate) in the range of 1.6 to 64, the residual amount of Sn in the sintered body is reduced. Therefore, the decrease in the metal filling rate in the sintered body is suppressed and the volume can be formed. A sintered body with excellent resistance to temperature cycle characteristics in electrical resistivity.

於金屬粒子A包含Cu、金屬粒子B包含Sn與Bi的情況下,以質量基準計,Cu於金屬粒子A及金屬粒子B的整體中所佔的含有率與Bi於金屬粒子A及金屬粒子B的整體中所佔的含有率的比(Cu含有率/Bi含有率)較佳為1.1~44,更佳為2.3~44,進而佳為3~20,特佳為5~10。若比(Cu含有率/Bi含有率)為1.1~44,則有能夠形成體積電阻率的耐溫度循環特性優異的燒結體的傾向。When the metal particle A contains Cu and the metal particle B contains Sn and Bi, the content of Cu in the whole of the metal particle A and the metal particle B is the same as that of Bi in the metal particle A and the metal particle B on a mass basis The ratio of the content ratio (Cu content/Bi content) in the whole of the content is preferably 1.1-44, more preferably 2.3-44, still more preferably 3-20, and particularly preferably 5-10. If the ratio (Cu content/Bi content) is 1.1 to 44, there is a tendency that a sintered body having excellent volume resistivity and temperature cycle resistance can be formed.

金屬粒子B相對於金屬粒子A的比例(金屬粒子B/金屬粒子A)以質量基準計較佳為10/90~90/10,更佳為20/80~80/20,進而佳為30/70~70/30。The ratio of metal particle B to metal particle A (metal particle B/metal particle A) on a mass basis is preferably 10/90 to 90/10, more preferably 20/80 to 80/20, and still more preferably 30/70 ~70/30.

金屬粒子A及金屬粒子B的平均粒子徑並無特別限定。例如,於某實施方式中,金屬粒子A及金屬粒子B的平均粒子徑分別可為0.1 μm~10 μm,亦可為1 μm~5 μm,亦可為2 μm~3 μm。 另外,於某實施方式中,金屬粒子A的平均粒子徑較佳為0.05 μm~10 μm,更佳為0.1 μm~2 μm,進而佳為0.15 μm~1 μm。尤其是藉由金屬粒子A的平均粒子徑為2 μm以下,而於暫態液相燒結後,可減低並未進行液相燒結的金屬粒子A的量,結果,有可適宜地降低電磁波屏蔽用燒結體的體積電阻率的傾向。 另外,於某實施方式中,就電磁波屏蔽用組成物中的金屬填充率的觀點而言,金屬粒子B的平均粒子徑較佳為0.01 μm~4 μm,更佳為0.05 μm~1 μm或2 μm~3 μm。The average particle diameters of the metal particles A and the metal particles B are not particularly limited. For example, in a certain embodiment, the average particle diameter of the metal particles A and the metal particles B may be 0.1 μm-10 μm, respectively, may be 1 μm-5 μm, or may be 2 μm-3 μm. In addition, in a certain embodiment, the average particle diameter of the metal particles A is preferably 0.05 μm to 10 μm, more preferably 0.1 μm to 2 μm, and still more preferably 0.15 μm to 1 μm. In particular, since the average particle diameter of the metal particles A is 2 μm or less, after the transient liquid phase sintering, the amount of the metal particles A that have not undergone liquid phase sintering can be reduced. As a result, it is possible to suitably reduce the electromagnetic wave shielding effect. The tendency of the volume resistivity of the sintered body. In addition, in an embodiment, from the viewpoint of the metal filling rate in the electromagnetic wave shielding composition, the average particle diameter of the metal particles B is preferably 0.01 μm to 4 μm, more preferably 0.05 μm to 1 μm or 2 μm~3 μm.

進而,於某實施方式中,就進一步降低後述的電磁波屏蔽用燒結體的體積電阻率的觀點而言,金屬粒子A的平均粒子徑較佳為0.2 μm以上,更佳為0.8 μm以上,進而佳為2 μm以上。 另外,就提高後述的電磁波屏蔽用燒結體的表面的平滑性的觀點而言,金屬粒子A的平均粒子徑較佳為2 μm以下,更佳為1 μm以下,進而佳為0.8 μm以下。Furthermore, in a certain embodiment, from the viewpoint of further reducing the volume resistivity of the sintered body for electromagnetic wave shielding described later, the average particle diameter of the metal particles A is preferably 0.2 μm or more, more preferably 0.8 μm or more, and still more preferably It is 2 μm or more. In addition, from the viewpoint of improving the surface smoothness of the sintered body for electromagnetic wave shielding described later, the average particle diameter of the metal particles A is preferably 2 μm or less, more preferably 1 μm or less, and still more preferably 0.8 μm or less.

金屬粒子A與金屬粒子B的大小的關係並無特別限定。為了容易形成金屬粒子A與金屬粒子B的燒結體,較佳為於燒結前儘可能密地填充金屬粒子A及金屬粒子B。因此,例如,金屬粒子A的平均粒子徑/金屬粒子B的平均粒子徑的值較佳為大於1,更佳為大於1.1,進而佳為大於1.2。金屬粒子A的平均粒子徑/金屬粒子B的平均粒子徑的值的上限並無特別限制,例如,可為3以下。The relationship between the sizes of the metal particles A and the metal particles B is not particularly limited. In order to easily form a sintered body of the metal particles A and the metal particles B, it is preferable to pack the metal particles A and the metal particles B as densely as possible before sintering. Therefore, for example, the value of the average particle diameter of the metal particle A/the average particle diameter of the metal particle B is preferably greater than 1, more preferably greater than 1.1, and still more preferably greater than 1.2. The upper limit of the value of the average particle diameter of the metal particle A/the average particle diameter of the metal particle B is not particularly limited, and for example, it may be 3 or less.

另外,於某實施方式中,亦可金屬粒子A的平均粒子徑為10 μm~50 μm,金屬粒子B的平均粒子徑為5 μm~30 μm,金屬粒子A的平均粒子徑/金屬粒子B的平均粒子徑的值超過1且為10以下。另外,於某實施方式中,亦可金屬粒子A的平均粒子徑為0.01 μm~10 μm,金屬粒子B的平均粒子徑為5 μm~30 μm,金屬粒子A的平均粒子徑/金屬粒子B的平均粒子徑的值為0.002以上且小於1。另外,於某實施方式中,亦可金屬粒子A的平均粒子徑為4 μm~10 μm,金屬粒子B的平均粒子徑為3 μm~10 μm,金屬粒子A的平均粒子徑/金屬粒子B的平均粒子徑的值為0.5~2。另外,於某實施方式中,亦可金屬粒子A的平均粒子徑為0.01 μm~10 μm,金屬粒子B的平均粒子徑為0.01 μm~5 μm,金屬粒子A的平均粒子徑/金屬粒子B的平均粒子徑的值為0.05~2。In addition, in a certain embodiment, the average particle diameter of metal particle A may be 10 μm-50 μm, the average particle diameter of metal particle B may be 5 μm-30 μm, and the average particle diameter of metal particle A/metal particle B The value of the average particle diameter exceeds 1 and is 10 or less. In addition, in a certain embodiment, the average particle diameter of metal particle A may be 0.01 μm-10 μm, the average particle diameter of metal particle B may be 5 μm-30 μm, and the average particle diameter of metal particle A/metal particle B may be The value of the average particle diameter is 0.002 or more and less than 1. In addition, in a certain embodiment, the average particle diameter of metal particle A may be 4 μm-10 μm, the average particle diameter of metal particle B may be 3 μm-10 μm, and the average particle diameter of metal particle A/metal particle B may be The value of the average particle diameter is 0.5-2. In addition, in an embodiment, the average particle diameter of metal particle A may be 0.01 μm-10 μm, the average particle diameter of metal particle B may be 0.01 μm-5 μm, and the average particle diameter of metal particle A/metal particle B The value of the average particle diameter is 0.05-2.

金屬粒子的平均粒子徑是指藉由雷射繞射式粒度分佈計(例如,貝克曼-庫爾特(Beckman-Coulter)股份有限公司,LS 13 320型雷射散射繞射法粒度分佈測定裝置)測定的體積平均粒子徑。具體而言,於溶劑(萜品醇)125 g中,在0.01質量%~0.3質量%的範圍內添加金屬粒子,製備分散液。將該分散液的約100 ml左右注入至槽(cell)中,於25℃下進行測定。粒度分佈是將溶劑的折射率設為1.48來測定。The average particle diameter of metal particles refers to a laser diffraction particle size distribution meter (for example, Beckman-Coulter Co., Ltd., LS 13 320 laser scattering diffraction method particle size distribution measuring device ) The measured volume average particle diameter. Specifically, in 125 g of a solvent (terpineol), metal particles are added in the range of 0.01% by mass to 0.3% by mass to prepare a dispersion. About 100 ml of this dispersion liquid is poured into a cell, and it measures at 25 degreeC. The particle size distribution is measured by setting the refractive index of the solvent to 1.48.

電磁波屏蔽用組成物中的金屬粒子A及金屬粒子B的合計含有率並無特別限定。例如,金屬粒子A及金屬粒子B於電磁波屏蔽用組成物的固體成分整體中所佔的以質量基準計的合計比例較佳為96質量%以下,更佳為95質量%以下,進而佳為94質量%以下。另外,金屬粒子A及金屬粒子B於電磁波屏蔽用組成物的固體成分整體中所佔的以質量基準計的合計比例可為65質量%以上。The total content of the metal particles A and the metal particles B in the electromagnetic wave shielding composition is not particularly limited. For example, the total ratio of the metal particles A and the metal particles B to the total solid content of the electromagnetic wave shielding composition on a mass basis is preferably 96% by mass or less, more preferably 95% by mass or less, and still more preferably 94 Less than mass%. In addition, the total ratio of the metal particles A and the metal particles B to the entire solid content of the electromagnetic wave shielding composition on a mass basis may be 65% by mass or more.

電磁波屏蔽用組成物中的金屬粒子A及金屬粒子B的合計含有率並無特別限定。例如,金屬粒子A及金屬粒子B於電磁波屏蔽用組成物整體中所佔的以質量基準計的合計比例較佳為96質量%以下,更佳為95質量%以下,進而佳為94質量%以下。另外,金屬粒子A及金屬粒子B於電磁波屏蔽用組成物整體中所佔的以質量基準計的合計比例可為65質量%以上。The total content of the metal particles A and the metal particles B in the electromagnetic wave shielding composition is not particularly limited. For example, the total ratio on a mass basis of the metal particles A and the metal particles B in the entire electromagnetic wave shielding composition is preferably 96% by mass or less, more preferably 95% by mass or less, and still more preferably 94% by mass or less . In addition, the total ratio of the metal particles A and the metal particles B in the entire electromagnetic wave shielding composition on a mass basis may be 65% by mass or more.

(樹脂) 本揭示的電磁波屏蔽用組成物含有樹脂。藉由電磁波屏蔽用組成物包含樹脂,金屬粒子A與金屬粒子B的燒結體中的空隙被樹脂填充,有應力緩和性及接著力提高的傾向。(Resin) The electromagnetic wave shielding composition of the present disclosure contains resin. When the electromagnetic wave shielding composition contains a resin, the voids in the sintered body of the metal particles A and the metal particles B are filled with the resin, and the stress relaxation properties and adhesiveness tend to be improved.

電磁波屏蔽用組成物中所含的樹脂可為熱塑性樹脂,亦可為熱硬化性樹脂,亦可為該些的組合。另外,樹脂可為具有藉由加熱而可產生聚合反應的官能基的單體的狀態,亦可為已經聚合的聚合物的狀態。The resin contained in the electromagnetic wave shielding composition may be a thermoplastic resin, a thermosetting resin, or a combination of these. In addition, the resin may be in the state of a monomer having a functional group capable of generating a polymerization reaction by heating, or may be in the state of a polymer that has already been polymerized.

就耐熱性的觀點而言,電磁波屏蔽用組成物較佳為包含熱硬化性樹脂作為樹脂。作為熱硬化性樹脂,可列舉具有環氧基、丙烯醯基、甲基丙烯醯基、羥基、乙烯基、羧基、胺基、馬來醯亞胺基、酸酐基、硫醇基、亞硫醯基等官能基的樹脂。From the viewpoint of heat resistance, the electromagnetic wave shielding composition preferably contains a thermosetting resin as the resin. Examples of thermosetting resins include epoxy groups, acrylic groups, methacrylic groups, hydroxyl groups, vinyl groups, carboxyl groups, amino groups, maleimide groups, acid anhydride groups, thiol groups, and sulfinyl groups. Resins with functional groups such as groups.

作為熱硬化性樹脂,具體而言,可列舉:環氧樹脂、噁嗪樹脂、雙馬來醯亞胺樹脂、酚樹脂、不飽和聚酯樹脂、矽酮樹脂等。該些中,較佳為環氧樹脂。Specific examples of thermosetting resins include epoxy resins, oxazine resins, bismaleimide resins, phenol resins, unsaturated polyester resins, and silicone resins. Among these, epoxy resin is preferred.

作為環氧樹脂的具體例,例如可列舉:雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、萘型環氧樹脂、聯苯酚型環氧樹脂、聯苯基酚醛清漆型環氧樹脂及環式脂肪族環氧樹脂。樹脂成分可單獨使用一種,亦可併用兩種以上。Specific examples of epoxy resins include, for example, bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, and cresol novolac type epoxy resins. Oxygen resin, naphthalene type epoxy resin, biphenol type epoxy resin, biphenyl novolac type epoxy resin and cycloaliphatic epoxy resin. A resin component may be used individually by 1 type, and may use 2 or more types together.

電磁波屏蔽用組成物中的樹脂的含有率並無特別限制。例如,樹脂於電磁波屏蔽用組成物的固體成分整體中所佔的比例較佳為0.1質量%~50質量%,更佳為0.5質量%~30質量%,進而佳為1質量%~15質量%。 另外,樹脂於除了金屬粒子A及金屬粒子B以外的電磁波屏蔽用組成物的固體成分中所佔的比例較佳為10質量%~90質量%,更佳為20質量%~80質量%,進而佳為30質量%~70質量%。The content of the resin in the electromagnetic wave shielding composition is not particularly limited. For example, the proportion of the resin in the total solid content of the electromagnetic wave shielding composition is preferably 0.1% by mass to 50% by mass, more preferably 0.5% by mass to 30% by mass, and still more preferably 1% by mass to 15% by mass . In addition, the proportion of the resin in the solid content of the electromagnetic wave shielding composition other than the metal particles A and the metal particles B is preferably 10% by mass to 90% by mass, more preferably 20% by mass to 80% by mass, and further Preferably, it is 30% by mass to 70% by mass.

電磁波屏蔽用組成物中的樹脂的含有率並無特別限制。例如,樹脂於電磁波屏蔽用組成物的整體中所佔的比例較佳為0.1質量%~5質量%,更佳為0.2質量%~3質量%,進而佳為0.3質量%~1質量%。 另外,樹脂於除了金屬粒子A及金屬粒子B以外的電磁波屏蔽用組成物中所佔的比例較佳為0.5質量%~10質量%,更佳為0.8質量%~5質量%,進而佳為1質量%~3質量%。The content of the resin in the electromagnetic wave shielding composition is not particularly limited. For example, the proportion of the resin in the entire electromagnetic wave shielding composition is preferably 0.1% by mass to 5% by mass, more preferably 0.2% by mass to 3% by mass, and still more preferably 0.3% by mass to 1% by mass. In addition, the proportion of the resin in the electromagnetic wave shielding composition other than the metal particles A and the metal particles B is preferably 0.5% by mass to 10% by mass, more preferably 0.8% by mass to 5% by mass, and still more preferably 1 Mass% to 3% by mass.

(硬化劑) 於樹脂為熱硬化性樹脂的情況下,電磁波屏蔽用組成物亦可含有使熱硬化性樹脂硬化的硬化劑。 硬化劑的種類並無特別限定,可根據熱硬化性樹脂的種類來適宜選擇。(hardener) When the resin is a thermosetting resin, the electromagnetic wave shielding composition may contain a curing agent that hardens the thermosetting resin. The kind of hardening agent is not specifically limited, According to the kind of thermosetting resin, it can select suitably.

於熱硬化性樹脂為環氧樹脂的情況下,作為硬化劑,可列舉:胺系硬化劑、酚系硬化劑、酸酐系硬化劑等。硬化劑既可使用液體狀的硬化劑,亦可使用固體狀的硬化劑。 硬化劑可單獨使用一種,亦可併用兩種以上。When the thermosetting resin is an epoxy resin, examples of the curing agent include amine curing agents, phenol curing agents, acid anhydride curing agents, and the like. The curing agent may be a liquid curing agent or a solid curing agent. The hardener may be used singly, or two or more of them may be used in combination.

作為胺系硬化劑,可列舉:鏈狀脂肪族胺、環狀脂肪族胺、脂肪芳香族胺、芳香族胺等。 作為胺系硬化劑,具體而言,可列舉:間苯二胺、1,3-二胺基甲苯、1,4-二胺基甲苯、2,4-二胺基甲苯、3,5-二乙基-2,4-二胺基甲苯、3,5-二乙基-2,6-二胺基甲苯、2,4-二胺基苯甲醚等芳香環為1個的芳香族胺硬化劑;4,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基碸、4,4'-亞甲基雙(2-乙基苯胺)、3,3'-二乙基-4,4'-二胺基二苯基甲烷、3,3',5,5'-四甲基-4,4'-二胺基二苯基甲烷、3,3',5,5'-四乙基-4,4'-二胺基二苯基甲烷等芳香環為2個的芳香族胺硬化劑;芳香族胺硬化劑的水解縮合物;聚氧化四亞甲基二-對胺基苯甲酸酯(polytetramethylene oxide di-p-amino benzoic acid ester)、聚氧化四亞甲基二-對胺基苯甲酸酯(polytetramethylene oxide di-p-amino benzoate)等具有聚醚結構的芳香族胺硬化劑;芳香族二胺與表氯醇的縮合物;芳香族二胺與苯乙烯的反應產物等。Examples of the amine-based curing agent include chain aliphatic amines, cyclic aliphatic amines, aliphatic aromatic amines, and aromatic amines. Specific examples of the amine curing agent include: m-phenylenediamine, 1,3-diaminotoluene, 1,4-diaminotoluene, 2,4-diaminotoluene, 3,5-diaminotoluene, and 3,5-diaminotoluene. Ethyl-2,4-diaminotoluene, 3,5-diethyl-2,6-diaminotoluene, 2,4-diaminoanisole and other aromatic amine hardening Agent; 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 4,4'-methylenebis(2-ethylaniline), 3,3'- Diethyl-4,4'-diaminodiphenylmethane, 3,3',5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 3,3',5 ,5'-tetraethyl-4,4'-diaminodiphenylmethane and other aromatic amine hardeners with two aromatic rings; the hydrolysis condensate of aromatic amine hardeners; polyoxytetramethylene two -Polytetramethylene oxide di-p-amino benzoic acid ester, polytetramethylene oxide di-p-amino benzoate, etc. have polyethers Structured aromatic amine hardener; condensate of aromatic diamine and epichlorohydrin; reaction product of aromatic diamine and styrene, etc.

作為酸酐系硬化劑,可列舉:鄰苯二甲酸酐、馬來酸酐、甲基雙環庚烯二甲酸酐、雙環庚烯二甲酸酐、琥珀酸酐、四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、氯橋酸酐、甲基四氫鄰苯二甲酸酐、3-甲基六氫鄰苯二甲酸酐、4-甲基六氫鄰苯二甲酸酐、三烷基四氫鄰苯二甲酸酐馬來酸加成物、二苯甲酮四羧酸酐、偏苯三甲酸酐、均苯四甲酸酐、氫化甲基納迪克酸酐、由馬來酸酐與二烯化合物並藉由狄爾斯-阿爾德反應(Diels-Alder reaction)而獲得且具有多個烷基的三烷基四氫鄰苯二甲酸酐、十二碳烯基琥珀酸酐等各種環狀酸酐。Examples of acid anhydride hardeners include phthalic anhydride, maleic anhydride, methylbicycloheptene dicarboxylic acid anhydride, bicycloheptene dicarboxylic acid anhydride, succinic anhydride, tetrahydrophthalic anhydride, and hexahydrophthalic anhydride. Dicarboxylic anhydride, chloro-bridged acid anhydride, methyltetrahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride Formic anhydride maleic acid adduct, benzophenone tetracarboxylic anhydride, trimellitic anhydride, pyromellitic anhydride, hydrogenated methyl nadic anhydride, from maleic anhydride and diene compounds and through Diels- Various cyclic anhydrides such as trialkyltetrahydrophthalic anhydride and dodecenyl succinic anhydride, which are obtained by Diels-Alder reaction and have multiple alkyl groups.

作為酚系硬化劑,可列舉:使選自由苯酚化合物(例如,苯酚、甲酚、二甲酚、間苯二酚、兒茶酚、雙酚A及雙酚F)及萘酚化合物(例如,α-萘酚、β-萘酚及二羥基萘)所組成的群組中的至少一種、與醛化合物(例如,甲醛、乙醛、丙醛、苯甲醛及水楊醛)於酸性觸媒下縮合或共縮合而獲得的酚醛清漆樹脂;苯酚-芳烷基樹脂;聯苯基-芳烷基樹脂;萘酚-芳烷基樹脂等。Examples of phenolic hardeners include those selected from phenol compounds (for example, phenol, cresol, xylenol, resorcinol, catechol, bisphenol A and bisphenol F) and naphthol compounds (for example, At least one of the group consisting of α-naphthol, β-naphthol, and dihydroxy naphthalene, and aldehyde compounds (for example, formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, and salicylaldehyde) in an acid catalyst Novolac resin obtained by condensation or co-condensation; phenol-aralkyl resin; biphenyl-aralkyl resin; naphthol-aralkyl resin, etc.

較佳為將硬化劑的官能基(例如,於胺系硬化劑時為胺基,於酚系硬化劑時為酚性羥基,於酸酐系硬化劑時為酸酐基)的當量數與環氧樹脂的當量數的比(硬化劑的當量數/環氧樹脂的當量數)設定為0.6~1.4的範圍,更佳為設定為0.7~1.3的範圍,進而佳為設定為0.8~1.2的範圍。It is preferable to combine the equivalent number of the functional group of the hardener (for example, an amine group in the case of an amine hardener, a phenolic hydroxyl group in the case of a phenolic hardener, and an acid anhydride group in the case of an acid anhydride hardener) with the epoxy resin The ratio of the number of equivalents (the number of equivalents of the curing agent/the number of equivalents of the epoxy resin) is set in the range of 0.6 to 1.4, more preferably in the range of 0.7 to 1.3, and still more preferably in the range of 0.8 to 1.2.

(硬化促進劑) 於電磁波屏蔽用組成物含有熱硬化性樹脂的情況下,電磁波屏蔽用組成物亦可含有促進熱硬化性樹脂的硬化反應或熱硬化性樹脂與硬化劑的硬化反應的硬化促進劑。 硬化促進劑的種類並無特別限定,可根據熱硬化性樹脂及硬化劑的種類來適宜選擇。(Hardening accelerator) When the electromagnetic wave shielding composition contains a thermosetting resin, the electromagnetic wave shielding composition may contain a curing accelerator that promotes the curing reaction of the thermosetting resin or the curing reaction of the thermosetting resin and the curing agent. The kind of hardening accelerator is not specifically limited, According to the kind of thermosetting resin and hardening agent, it can select suitably.

作為硬化促進劑,具體而言,可列舉:1,8-二氮雜-雙環[5.4.0]十一烯-7、1,5-二氮雜-雙環[4.3.0]壬烯、5,6-二丁基胺基-1,8-二氮雜-雙環[5.4.0]十一烯-7等環脒化合物;對環脒化合物加成馬來酸酐、1,4-苯醌、2,5-甲苯醌、1,4-萘醌、2,3-二甲基苯醌、2,6-二甲基苯醌、2,3-二甲氧基-5-甲基-1,4-苯醌、2,3-二甲氧基-1,4-苯醌、苯基-1,4-苯醌等醌化合物、重氮苯基甲烷、酚樹脂等具有π鍵的化合物而成的具有分子內極化的化合物;苄基二甲基胺、三乙醇胺、二甲基胺基乙醇、三(二甲基胺基甲基)苯酚等三級胺化合物;三級胺化合物的衍生物;咪唑、2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑等咪唑化合物;咪唑化合物的衍生物;四苯基鏻四苯基硼酸鹽、三苯基鏻四苯基硼酸鹽、2-乙基-4-甲基咪唑鎓四苯基硼酸鹽、N-甲基嗎啉鎓四苯基硼酸鹽等四苯基硼酸鹽;四苯基硼酸鹽的衍生物;三苯基膦-三苯基硼烷錯合物、嗎啉-三苯基硼烷錯合物等三苯基硼烷錯合物等。硬化促進劑可單獨使用一種,亦可併用兩種以上。Specific examples of the hardening accelerator include: 1,8-diaza-bicyclo[5.4.0]undecene-7, 1,5-diaza-bicyclo[4.3.0]nonene, 5 ,6-Dibutylamino-1,8-diaza-bicyclo[5.4.0]undecene-7 and other cyclic amidine compounds; p-cyclic amidine compounds add maleic anhydride, 1,4-benzoquinone, 2,5-methylbenzoquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1, Quinone compounds such as 4-benzoquinone, 2,3-dimethoxy-1,4-benzoquinone, phenyl-1,4-benzoquinone, diazophenylmethane, phenol resins and other compounds with π bonds Compounds with intramolecular polarization; tertiary amine compounds such as benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol; derivatives of tertiary amine compounds ; Imidazole, 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole and other imidazole compounds; derivatives of imidazole compounds; tetraphenylphosphonium tetraphenyl borate, triphenylphosphonium tetra Tetraphenyl borate such as phenyl borate, 2-ethyl-4-methylimidazolium tetraphenyl borate, N-methylmorpholinium tetraphenyl borate; derivatives of tetraphenyl borate; Triphenylborane complexes such as triphenylphosphine-triphenylborane complexes, morpholine-triphenylborane complexes, etc. One type of hardening accelerator may be used alone, or two or more types may be used in combination.

硬化促進劑的含有率相對於熱硬化性樹脂及硬化劑的合計量而較佳為0.1質量%~15質量%。The content of the curing accelerator is preferably 0.1% by mass to 15% by mass relative to the total amount of the thermosetting resin and the curing agent.

(助焊劑成分) 本揭示的電磁波屏蔽用組成物亦可含有助焊劑成分。於本揭示中,所謂助焊劑成分,是指可發揮助焊作用(氧化膜的去除作用)的有機化合物,其種類並無特別限制。助焊劑成分亦可作為熱硬化性樹脂即環氧樹脂的硬化劑來發揮功能。於本揭示中,將既作為助焊劑成分發揮功能亦作為環氧樹脂的硬化劑發揮功能的成分稱為助焊劑成分。 作為助焊劑成分,具體而言,可列舉:松香、活性劑、觸變劑、抗氧化劑等。助焊劑成分可單獨使用一種,亦可併用兩種以上。(Flux composition) The electromagnetic wave shielding composition of the present disclosure may also contain a flux component. In the present disclosure, the so-called flux component refers to an organic compound that can exert a fluxing effect (a removal effect of an oxide film), and the type thereof is not particularly limited. The flux component can also function as a curing agent for epoxy resin, which is a thermosetting resin. In the present disclosure, a component that functions both as a flux component and also as a hardening agent for epoxy resin is referred to as a flux component. Specific examples of flux components include rosin, activating agents, thixotropic agents, and antioxidants. One type of flux component may be used alone, or two or more types may be used in combination.

作為松香,具體而言,可列舉:脫氫松脂酸、二氫松脂酸、新松脂酸、二氫海松酸、海松酸、異海松酸、四氫松脂酸、長葉松酸(palustric acid)、2,2-雙(羥基甲基)丙酸(2,2-bis(hydroxymethyl)propionic acid,BHPA)等。 作為活性劑,具體而言,可列舉:胺基癸酸、戊烷-1,5-二羧酸、三乙醇胺、二乙醇胺、乙醇胺二苯基乙酸、癸二酸、鄰苯二甲酸、苯甲酸、二溴水楊酸、茴香酸、碘水楊酸、吡啶甲酸、丙酸、4-胺基水楊酸、3-(苄基胺基)丙酸乙酯等。 作為觸變劑,具體而言,可列舉:12-羥基硬脂酸、12-羥基硬脂酸甘油三酯、乙烯雙硬脂酸醯胺、六亞甲基雙油酸醯胺、N,N'-二硬脂基己二酸醯胺等。 作為抗氧化劑,具體而言,可列舉:受阻酚系抗氧化劑、磷系抗氧化劑、羥基胺系抗氧化劑等。As the rosin, specifically, dehydropinpinic acid, dihydropinpinic acid, neopinpinic acid, dihydropimaric acid, pimaric acid, isopimaric acid, tetrahydropinpinic acid, palustric acid, 2,2-bis(hydroxymethyl)propionic acid (2,2-bis(hydroxymethyl)propionic acid, BHPA), etc. Specific examples of the active agent include: aminodecanoic acid, pentane-1,5-dicarboxylic acid, triethanolamine, diethanolamine, ethanolamine diphenylacetic acid, sebacic acid, phthalic acid, benzoic acid , Dibromosalicylic acid, anisic acid, iodosalicylic acid, picolinic acid, propionic acid, 4-aminosalicylic acid, 3-(benzylamino) ethyl propionate, etc. Specific examples of the thixotropic agent include: 12-hydroxystearic acid, 12-hydroxystearic acid triglyceride, ethylene distearate amide, hexamethylene bisoleate amide, N,N '-Distearyl adipamide and so on. Specific examples of the antioxidant include hindered phenol-based antioxidants, phosphorus-based antioxidants, and hydroxylamine-based antioxidants.

於電磁波屏蔽用組成物含有助焊劑成分的情況下,在某實施方式中,作為助焊劑成分,較佳為含有松香及活性劑的至少一者。於該情況下,較佳為松香包含BHPA,活性劑包含三乙醇胺。作為助焊劑成分,更佳為併用BHPA與三乙醇胺。When the composition for electromagnetic wave shielding contains a flux component, in a certain embodiment, as a flux component, it is preferable to contain at least one of rosin and an activating agent. In this case, it is preferable that the rosin contains BHPA and the active agent contains triethanolamine. As the flux component, it is more preferable to use BHPA and triethanolamine in combination.

於電磁波屏蔽用組成物含有助焊劑成分的情況下,在某實施方式中,較佳為於將助焊劑成分發生相變的溫度設為α(℃)、將金屬粒子B的熔點設為β(℃)時,包含滿足β-20≦α≦β+20的助焊劑成分(特定助焊劑成分)。 藉由使用包含特定助焊劑成分的電磁波屏蔽用組成物,有可抑制於低溫且大氣環境下進行燒結時的燒結體表面的氧化的傾向。When the electromagnetic wave shielding composition contains a flux component, in a certain embodiment, it is preferable to set the temperature at which the flux component changes phase to α (°C) and the melting point of the metal particles B to β ( ℃), it contains a flux component (specific flux component) that satisfies β-20≦α≦β+20. By using an electromagnetic wave shielding composition containing a specific flux component, there is a tendency that oxidation of the sintered body surface during sintering at a low temperature in an atmospheric environment can be suppressed.

藉由使用特定助焊劑成分作為助焊劑成分而可抑制於大氣環境下進行燒結時的燒結體表面的氧化的理由並不明確,如以下般進行推測。 推測原因在於:於在金屬粒子A與金屬粒子B之間產生暫態液相燒結時,特定助焊劑成分於金屬粒子B的熔點附近成為活性狀態。因此,可於能夠進行暫態液相燒結的溫度下效率良好地抑制燒結體表面的氧化,可抑制燒結體表面的氧化。 再者,於本揭示中,「助焊劑成分發生相變的溫度」是指助焊劑成分自液體相變為氣體、自固體相變為液體等的溫度。例如,「助焊劑成分發生相變的溫度」可為助焊劑成分的熔點或助焊劑成分的沸點。The reason why the oxidation of the surface of the sintered body during sintering in an atmospheric environment can be suppressed by using a specific flux component as the flux component is not clear, but it is estimated as follows. It is presumed that the reason is that when transient liquid phase sintering occurs between the metal particle A and the metal particle B, the specific flux component becomes an active state near the melting point of the metal particle B. Therefore, the oxidation of the surface of the sintered body can be efficiently suppressed at a temperature at which transient liquid phase sintering can be performed, and the oxidation of the surface of the sintered body can be suppressed. In addition, in the present disclosure, "the temperature at which the flux component undergoes a phase change" refers to the temperature at which the flux component changes from a liquid to a gas, from a solid to a liquid, or the like. For example, "the temperature at which the flux component undergoes a phase change" may be the melting point of the flux component or the boiling point of the flux component.

進而,於對藉由使用包含特定助焊劑成分的電磁波屏蔽用組成物而獲得的燒結體進行高溫高濕試驗等可靠性試驗的情況下,有亦可抑制體積電阻率的上升等特性的劣化、外觀的惡化等的傾向。Furthermore, when reliability tests such as high-temperature and high-humidity tests are performed on a sintered body obtained by using an electromagnetic wave shielding composition containing a specific flux component, it is possible to suppress deterioration of characteristics such as increase in volume resistivity, etc. The tendency of deterioration of appearance.

藉由特定助焊劑成分滿足α≦β+20,而特定助焊劑成分發生相變的溫度相對於金屬粒子B的熔點不會過於變高,於在低溫下進行暫態液相燒結時,特定助焊劑成為活性狀態,有可效率良好地抑制燒結體表面的氧化的傾向。Since the specific flux composition satisfies α≦β+20, the temperature at which the specific flux composition undergoes phase transition does not become too high relative to the melting point of the metal particles B. When transient liquid phase sintering is performed at a low temperature, the specific auxiliary flux The flux becomes active, and there is a tendency to efficiently suppress oxidation on the surface of the sintered body.

另外,藉由特定助焊劑成分滿足β-20≦α,而特定助焊劑成分發生相變的溫度相對於金屬粒子B的熔點不會過於變低,電磁波屏蔽用組成物的保存性優異,有可抑制對燒結體製造產生不良影響、同時可適宜地抑制於在大氣環境中進行燒結時的燒結體表面的氧化的傾向。In addition, since the specific flux component satisfies β-20≦α, the temperature at which the specific flux component undergoes phase transition does not become too low relative to the melting point of the metal particle B, and the electromagnetic wave shielding composition has excellent storage properties and can be While suppressing adverse effects on the production of the sintered body, the tendency of the surface of the sintered body to be oxidized during sintering in an air environment can be appropriately suppressed.

特定助焊劑成分可滿足α≦β+15,亦可滿足α≦β+10。 特定助焊劑成分可滿足β-10≦α,亦可滿足β≦α。The specific flux composition can satisfy α≦β+15 or α≦β+10. The specific flux composition can satisfy β-10≦α, or β≦α.

作為特定助焊劑成分,具體而言,可列舉:松香、活性劑、觸變劑、抗氧化劑等中滿足β-20≦α≦β+20的成分。特定助焊劑成分可單獨使用一種,亦可併用兩種以上。 例如,作為特定助焊劑成分,只要根據金屬粒子B熔點、與特定助焊劑成分發生相變的溫度的關係自松香、活性劑、觸變劑、抗氧化劑等中適宜選擇即可。As a specific flux component, specifically, the component which satisfies β-20≦α≦β+20 among rosin, activator, thixotropic agent, and antioxidant. A specific flux component may be used individually by 1 type, and may use 2 or more types together. For example, as the specific flux component, it may be appropriately selected from rosin, activator, thixotropic agent, antioxidant, etc., based on the relationship between the melting point of the metal particles B and the temperature at which the specific flux component undergoes phase change.

特定助焊劑成分發生相變的溫度例如較佳為130℃~160℃,更佳為135℃~155℃。The temperature at which the phase transition of the specific flux component occurs is preferably 130°C to 160°C, and more preferably 135°C to 155°C, for example.

特定助焊劑成分較佳為選自由丙酸、4-胺基水楊酸及3-(苄基胺基)丙酸乙酯所組成的群組中的至少一種。The specific flux component is preferably at least one selected from the group consisting of propionic acid, 4-aminosalicylic acid, and ethyl 3-(benzylamino)propionate.

於電磁波屏蔽用組成物含有助焊劑成分的情況下,助焊劑成分於電磁波屏蔽用組成物的固體成分整體中所佔的比例例如較佳為0.1質量%~50質量%,更佳為0.5質量%~40質量%,進而佳為1質量%~30質量%。 助焊劑成分於除了金屬粒子A及金屬粒子B以外的電磁波屏蔽用組成物的固體成分中所佔的比例較佳為5質量%~60質量%,更佳為10質量%~50質量%,進而佳為15質量%~40質量%。When the electromagnetic wave shielding composition contains a flux component, the ratio of the flux component to the entire solid content of the electromagnetic wave shielding composition is preferably, for example, 0.1% by mass to 50% by mass, more preferably 0.5% by mass ~40% by mass, more preferably 1% by mass to 30% by mass. The ratio of the flux component to the solid content of the electromagnetic wave shielding composition other than the metal particles A and the metal particles B is preferably 5 mass% to 60 mass%, more preferably 10 mass% to 50 mass%, and further It is preferably 15% by mass to 40% by mass.

於電磁波屏蔽用組成物含有特定助焊劑成分的情況下,特定助焊劑成分於電磁波屏蔽用組成物整體中所佔的比例例如較佳為1質量%~20質量%,更佳為3質量%~15質量%,進而佳為4質量%~10質量%。 於電磁波屏蔽用組成物含有特定助焊劑成分的情況下,特定助焊劑成分於除了金屬粒子A及金屬粒子B以外的電磁波屏蔽用組成物中所佔的比例較佳為5質量%~70質量%,更佳為10質量%~50質量%,進而佳為15質量%~30質量%。When the electromagnetic wave shielding composition contains a specific flux component, the ratio of the specific flux component to the entire electromagnetic wave shielding composition is preferably, for example, 1% by mass to 20% by mass, and more preferably 3% by mass to 15% by mass, more preferably 4% by mass to 10% by mass. When the electromagnetic wave shielding composition contains a specific flux component, the ratio of the specific flux component in the electromagnetic wave shielding composition excluding metal particles A and metal particles B is preferably 5 mass% to 70 mass% , More preferably 10% by mass to 50% by mass, and still more preferably 15% by mass to 30% by mass.

於電磁波屏蔽用組成物含有特定助焊劑成分的情況下,電磁波屏蔽用組成物可於包含特定助焊劑成分的同時包含不滿足β-20≦α≦β+20的助焊劑成分(以下,亦稱為「其他助焊劑成分」),亦可不包含其他助焊劑成分。When the electromagnetic wave shielding composition contains a specific flux component, the electromagnetic wave shielding composition may contain the specific flux component and at the same time include a flux component that does not satisfy β-20≦α≦β+20 (hereinafter, also referred to as It is "other flux components"), and other flux components may not be included.

其他助焊劑成分是由與金屬粒子B的熔點的關係來決定,具體而言,可自所述松香、活性劑、觸變劑及抗氧化劑的具體例中選擇。Other flux components are determined by the relationship with the melting point of the metal particles B, and specifically, can be selected from the specific examples of rosin, activator, thixotropic agent, and antioxidant.

於電磁波屏蔽用組成物含有特定助焊劑成分的情況下,在電磁波屏蔽用組成物中,特定助焊劑成分及其他助焊劑成分的合計中的其他助焊劑成分的比例可為80質量%以下,亦可為50質量%以下。When the electromagnetic wave shielding composition contains a specific flux component, in the electromagnetic wave shielding composition, the ratio of other flux components in the total of the specific flux component and other flux components may be 80% by mass or less. It can be 50% by mass or less.

(溶劑) 本揭示的電磁波屏蔽用組成物亦可含有溶劑。就充分溶解樹脂的觀點而言,溶劑較佳為極性溶劑,就抑制賦予電磁波屏蔽用組成物的步驟中的電磁波屏蔽用組成物的乾燥的觀點而言,較佳為具有200℃以上的沸點的溶劑,就抑制燒結時的孔隙的產生的觀點而言,更佳為具有300℃以下的沸點的溶劑。(Solvent) The electromagnetic wave shielding composition of the present disclosure may also contain a solvent. From the viewpoint of sufficiently dissolving the resin, the solvent is preferably a polar solvent, and from the viewpoint of suppressing drying of the electromagnetic wave shielding composition in the step of providing the electromagnetic wave shielding composition, it is preferably one having a boiling point of 200° C. or higher The solvent is more preferably a solvent having a boiling point of 300°C or less from the viewpoint of suppressing the generation of voids during sintering.

作為溶劑的例子,可列舉:萜品醇、硬脂基醇、三丙二醇甲醚、二乙二醇、二乙二醇單乙醚(別名,乙氧基乙氧基乙醇)、二乙二醇單己醚(別名:己基卡必醇)、二乙二醇單甲醚、二丙二醇-正丙醚、二丙二醇-正丁醚、三丙二醇-正丁醚、1,3-丁二醇、1,4-丁二醇、丙二醇苯基醚、2-(2-丁氧基乙氧基)乙醇等醇類;檸檬酸三丁酯、4-甲基-1,3-二氧雜環戊烷-2-酮、γ-丁內酯、二乙二醇單乙醚乙酸酯、二丙二醇甲醚乙酸酯、二乙二醇單丁醚乙酸酯、甘油三乙酸酯等酯類;異佛爾酮等酮;N-甲基-2-吡咯啶酮等內醯胺;苯基乙腈等腈類等。溶劑可單獨使用一種,亦可併用兩種以上。Examples of solvents include: terpineol, stearyl alcohol, tripropylene glycol methyl ether, diethylene glycol, diethylene glycol monoethyl ether (alias, ethoxyethoxyethanol), diethylene glycol mono Hexyl ether (alias: hexyl carbitol), diethylene glycol monomethyl ether, dipropylene glycol-n-propyl ether, dipropylene glycol-n-butyl ether, tripropylene glycol-n-butyl ether, 1,3-butanediol, 1, Alcohols such as 4-butanediol, propylene glycol phenyl ether, 2-(2-butoxyethoxy) ethanol; tributyl citrate, 4-methyl-1,3-dioxolane- 2-ketone, γ-butyrolactone, diethylene glycol monoethyl ether acetate, dipropylene glycol methyl ether acetate, diethylene glycol monobutyl ether acetate, glycerol triacetate and other esters; isophores Ketones such as ketone; N-methyl-2-pyrrolidone and other internal amines; nitriles such as phenylacetonitrile, etc. One type of solvent may be used alone, or two or more types may be used in combination.

電磁波屏蔽用組成物中的溶劑的比例較佳為電磁波屏蔽用組成物成為適於網版印刷法、噴霧塗佈法等賦予方法的黏度的量。 關於電磁波屏蔽用組成物中的溶劑的比例,於某實施方式中,相對於電磁波屏蔽用組成物的整體,例如較佳為0.1質量%~50質量%,更佳為0.5質量%~30質量%,進而佳為1質量%~10質量%。 關於電磁波屏蔽用組成物中的溶劑的比例,在某實施方式中,相對於電磁波屏蔽用組成物的整體,例如較佳為0.1質量%~25質量%,更佳為0.2質量%~20質量%,進而佳為0.3質量%~15質量%。The ratio of the solvent in the electromagnetic wave shielding composition is preferably such that the electromagnetic wave shielding composition has a viscosity suitable for imparting methods such as a screen printing method and a spray coating method. Regarding the ratio of the solvent in the electromagnetic wave shielding composition, in a certain embodiment, relative to the entire electromagnetic wave shielding composition, for example, it is preferably 0.1% by mass to 50% by mass, and more preferably 0.5% by mass to 30% by mass. , More preferably 1% by mass to 10% by mass. Regarding the ratio of the solvent in the electromagnetic wave shielding composition, in a certain embodiment, with respect to the entire electromagnetic wave shielding composition, for example, it is preferably 0.1% by mass to 25% by mass, and more preferably 0.2% by mass to 20% by mass. , More preferably 0.3% by mass to 15% by mass.

(電磁波屏蔽用組成物的製造方法) 本揭示的電磁波屏蔽用組成物的製造方法並無特別限定。可藉由如下方式而獲得:將構成電磁波屏蔽用組成物的成分混合,進而進行攪拌、溶解、分散等處理。用於進行該些混合、攪拌、分散等的裝置並無特別限定,可使用三根輥磨機、行星式混合機、行星式混合機、自轉公轉型攪拌裝置、擂潰機、雙軸混練機、薄層剪切分散機等。另外,亦可將該些裝置適宜組合來使用。於所述處理時,視需要亦可進行加熱。 處理後,亦可藉由過濾來調整電磁波屏蔽用組成物的最大粒子徑。過濾可使用過濾裝置進行。作為過濾用的過濾器,例如可列舉金屬網、金屬過濾器及尼龍網。(Method of manufacturing electromagnetic wave shielding composition) The manufacturing method of the electromagnetic wave shielding composition of this indication is not specifically limited. It can be obtained by mixing the components constituting the electromagnetic wave shielding composition, and then performing processing such as stirring, dissolving, and dispersing. The device used for these mixing, stirring, dispersing, etc. is not particularly limited, and three roll mills, planetary mixers, planetary mixers, rotation and rotation mixers, crushers, twin-shaft kneaders, etc. can be used. Thin-layer shearing and dispersing machine, etc. In addition, these devices may be appropriately combined and used. During the treatment, heating may be performed as needed. After the treatment, the maximum particle diameter of the electromagnetic wave shielding composition can also be adjusted by filtering. Filtration can be performed using a filtration device. As a filter for filtration, a metal mesh, a metal filter, and a nylon mesh are mentioned, for example.

<電磁波屏蔽用片> 本揭示的電磁波屏蔽用片具有包含本揭示的電磁波屏蔽用組成物的樹脂組成物層。視需要,本揭示的電磁波屏蔽用片亦可進而包含脫模膜而構成。<Sheet for electromagnetic wave shielding> The electromagnetic wave shielding sheet of the present disclosure has a resin composition layer containing the electromagnetic wave shielding composition of the present disclosure. If necessary, the electromagnetic wave shielding sheet of this disclosure may further include a mold release film, and may be comprised.

樹脂組成物層例如可藉由如下方式來製造:將於本揭示的電磁波屏蔽用組成物中添加溶劑而製備的清漆狀的電磁波屏蔽用組成物(以下,亦稱為「樹脂清漆」)賦予到聚對苯二甲酸乙二酯膜、聚醯亞胺膜等脫模膜上,並進行乾燥。The resin composition layer can be produced, for example, by applying a varnish-like electromagnetic wave shielding composition (hereinafter, also referred to as "resin varnish") prepared by adding a solvent to the electromagnetic wave shielding composition of the present disclosure. Polyethylene terephthalate film, polyimide film and other release films, and dried.

樹脂清漆的賦予可藉由公知的方法來實施。具體而言,可列舉:缺角輪塗佈、模塗佈、模唇塗佈、凹版塗佈、模板(stencil)塗佈、噴霧塗佈等方法;使用敷料器的方法等。作為用於以規定的厚度形成樹脂組成物層的樹脂清漆的賦予方法,可列舉:使被塗敷物通過間隙間的缺角輪塗佈法、自噴嘴塗佈調節了流量的樹脂清漆的模塗佈法等。於乾燥前的樹脂組成物層的厚度為50 μm~500 μm的情況下,較佳為使用缺角輪塗佈法。The application of the resin varnish can be implemented by a known method. Specifically, methods such as chipping wheel coating, die coating, die lip coating, gravure coating, stencil coating, spray coating, etc.; methods using an applicator, etc. can be cited. As a method of applying the resin varnish for forming the resin composition layer with a predetermined thickness, there can be mentioned: a cut-off wheel coating method in which the object to be coated passes through a gap, and die coating of a resin varnish with a flow rate adjusted from a nozzle. Bufa and so on. When the thickness of the resin composition layer before drying is 50 μm to 500 μm, it is preferable to use the chamfered wheel coating method.

關於乾燥方法,若可將樹脂清漆中所含的溶劑的至少一部分去除,則並無特別限制,可自通常所使用的乾燥方法中適宜選擇。 乾燥方法可使用利用常溫(例如,25℃)放置進行的乾燥、加熱乾燥或減壓乾燥。加熱乾燥或減壓乾燥可使用加熱板、溫風乾燥機、溫風加熱爐、氮氣乾燥機、紅外線乾燥機、紅外線加熱爐、遠紅外線加熱爐、微波加熱裝置、雷射加熱裝置、電磁加熱裝置、加熱器加熱裝置、蒸汽加熱爐等。 用於乾燥的溫度及時間可根據所使用的溶劑的種類及量來適宜調整,例如,較佳為於40℃~180℃下乾燥1分鐘~120分鐘。The drying method is not particularly limited as long as at least a part of the solvent contained in the resin varnish can be removed, and it can be appropriately selected from drying methods generally used. The drying method may use drying by standing at room temperature (for example, 25° C.), heat drying, or reduced pressure drying. Heating drying or decompression drying can use heating plate, warm air dryer, warm air heating furnace, nitrogen dryer, infrared dryer, infrared heating furnace, far infrared heating furnace, microwave heating device, laser heating device, electromagnetic heating device , Heater heating device, steam heating furnace, etc. The temperature and time for drying can be appropriately adjusted according to the type and amount of the solvent used. For example, drying is preferably at 40°C to 180°C for 1 minute to 120 minutes.

樹脂組成物層的平均厚度較佳為3 μm~300 μm,更佳為5 μm~100 μm,進而佳為10 μm~50 μm。The average thickness of the resin composition layer is preferably 3 μm to 300 μm, more preferably 5 μm to 100 μm, and still more preferably 10 μm to 50 μm.

<電磁波屏蔽用燒結體> 本揭示的電磁波屏蔽用燒結體為本揭示的電磁波屏蔽用組成物或本揭示的電磁波屏蔽用片的燒結體。電磁波屏蔽用燒結體的形狀並無特別限定,可為設置於支撐構件上的層狀,亦可為片狀。<Sintered body for electromagnetic wave shielding> The sintered body for electromagnetic wave shielding of this disclosure is a sintered body of the electromagnetic wave shielding composition of this disclosure or the electromagnetic wave shielding sheet of this disclosure. The shape of the sintered body for electromagnetic wave shielding is not particularly limited, and may be in the form of a layer provided on the support member, or may be in the form of a sheet.

本揭示的電磁波屏蔽用燒結體可藉由如下方式來製造:對本揭示的電磁波屏蔽用組成物或本揭示的電磁波屏蔽用片進行加熱,使電磁波屏蔽用組成物中所含的金屬粒子A與金屬粒子B進行暫態液相燒結。 暫態液相燒結可藉由加熱處理來進行,亦可藉由加熱加壓處理來進行。 加熱處理可使用加熱板、溫風乾燥機、溫風加熱爐、氮氣乾燥機、紅外線乾燥機、紅外線加熱爐、遠紅外線加熱爐、微波加熱裝置、雷射加熱裝置、電磁加熱裝置、加熱器加熱裝置、蒸汽加熱爐等。 另外,加熱加壓處理可使用熱板壓製裝置等,亦可一邊進行加壓一邊進行所述加熱處理。 暫態液相燒結中的加熱溫度取決於金屬粒子的種類,較佳為140℃以上,更佳為190℃以上,進而佳為220℃以上。該加熱溫度的上限並無特別限制,例如為300℃以下。 暫態液相燒結中的加熱時間取決於金屬粒子的種類,較佳為5秒~10小時,更佳為1分鐘~30分鐘,進而佳為3分鐘~10分鐘。 暫態液相燒結較佳為於低氧濃度的環境下進行。所謂低氧濃度環境下,是指體積基準的氧濃度為1000 ppm以下的狀態,較佳為500 ppm以下。 於電磁波屏蔽用組成物含有特定助焊劑成分作為助焊劑成分的情況下,暫態液相燒結可於低氧濃度的環境下進行,亦可於大氣環境下進行。藉由使用包含特定助焊劑成分的本揭示的電磁波屏蔽用組成物或本揭示的電磁波屏蔽用片來形成本揭示的電磁波屏蔽用燒結體,有即便於在大氣環境下進行暫態液相燒結的情況下亦可抑制表面的氧化的傾向。The sintered body for electromagnetic wave shielding of the present disclosure can be manufactured by heating the electromagnetic wave shielding composition of the present disclosure or the electromagnetic wave shielding sheet of the present disclosure, so that the metal particles A and the metal contained in the electromagnetic wave shielding composition are heated. Particle B undergoes transient liquid phase sintering. Transient liquid phase sintering may be performed by heat treatment, or may be performed by heat and pressure treatment. Heating treatment can use heating plate, warm air dryer, warm air heating furnace, nitrogen dryer, infrared dryer, infrared heating furnace, far infrared heating furnace, microwave heating device, laser heating device, electromagnetic heating device, heater heating Equipment, steam heating furnace, etc. In addition, a hot plate pressing device or the like may be used for the heat and pressure treatment, or the heat treatment may be performed while applying pressure. The heating temperature in transient liquid phase sintering depends on the type of metal particles, and is preferably 140°C or higher, more preferably 190°C or higher, and still more preferably 220°C or higher. The upper limit of this heating temperature is not specifically limited, For example, it is 300 degrees C or less. The heating time in transient liquid phase sintering depends on the type of metal particles, and is preferably 5 seconds to 10 hours, more preferably 1 minute to 30 minutes, and still more preferably 3 minutes to 10 minutes. The transient liquid phase sintering is preferably performed in an environment with a low oxygen concentration. The term "low oxygen concentration environment" refers to a state where the volume-based oxygen concentration is 1000 ppm or less, preferably 500 ppm or less. In the case where the electromagnetic wave shielding composition contains a specific flux component as the flux component, the transient liquid phase sintering can be performed in a low oxygen concentration environment or in an atmospheric environment. By using the electromagnetic wave shielding composition of the present disclosure or the electromagnetic wave shielding sheet of the present disclosure containing a specific flux component to form the electromagnetic wave shielding sintered body of the present disclosure, there are those that perform transient liquid phase sintering even in an atmospheric environment In this case, the tendency of surface oxidation can also be suppressed.

電磁波屏蔽用燒結體的體積電阻率較佳為3×10-4 Ω·cm以下,更佳為9×10-5 Ω·cm以下,進而佳為8×10-5 Ω·cm以下,特佳為7×10-5 Ω·cm以下。電磁波屏蔽用燒結體的體積電阻率可為1×10-5 Ω·cm以上。 於本揭示中,體積電阻率是指藉由下述方法而測定的值。 自片狀的電磁波屏蔽用燒結體切出一邊的長度為15 mm的正四邊形的板狀樣品,於板狀樣品的中心按壓高精度電阻率計羅萊斯塔(Loresta)-GP(日東精工分析技術(Nittoseiko analytech)股份有限公司製造)的4探針。根據所獲得的表面電阻率與膜厚求出體積電阻率ρ(Ω·cm)。於本揭示中,對5個板狀樣品進行測定,並將其平均值設為電磁波屏蔽用燒結體的體積電阻率。The volume resistivity of the sintered body for electromagnetic wave shielding is preferably 3×10 -4 Ω·cm or less, more preferably 9×10 -5 Ω·cm or less, and still more preferably 8×10 -5 Ω·cm or less, particularly preferably It is 7×10 -5 Ω·cm or less. The volume resistivity of the sintered body for electromagnetic wave shielding may be 1×10 -5 Ω·cm or more. In this disclosure, the volume resistivity refers to the value measured by the following method. Cut out a regular quadrilateral plate sample with a length of 15 mm on one side from the sheet-shaped sintered body for electromagnetic wave shielding, and press the high-precision resistivity meter Loresta-GP (Nitto Seiko analysis technology) on the center of the plate-shaped sample. (Manufactured by Nittoseiko analytech) Co., Ltd.) 4 probes. The volume resistivity ρ (Ω·cm) is obtained from the obtained surface resistivity and film thickness. In this disclosure, five plate-shaped samples are measured, and the average value thereof is used as the volume resistivity of the sintered body for electromagnetic wave shielding.

於電磁波屏蔽用燒結體為層狀或片狀的情況下,電磁波屏蔽用燒結體的平均厚度較佳為3 μm~30 μm,更佳為4 μm~20 μm,進而佳為5 μm~10 μm。When the sintered body for electromagnetic wave shielding is layered or sheet-like, the average thickness of the sintered body for electromagnetic wave shielding is preferably 3 μm-30 μm, more preferably 4 μm-20 μm, and still more preferably 5 μm-10 μm .

<電子零件裝置> 本揭示的電子零件裝置具有由本揭示的電磁波屏蔽用燒結體覆蓋的區域。 作為電子零件裝置,可列舉:於引線框架、完成配線的帶載體、配線板、玻璃、矽晶圓等支撐構件上,搭載有半導體晶片、電晶體、二極體、閘流體等主動元件、電容器、電阻體、電阻陣列、線圈、開關等被動元件等電子零件的裝置。 藉由利用本揭示的電磁波屏蔽用燒結體覆蓋電子零件及支撐構件中的產生電磁波的部位或容易受到電磁波的影響的部位,可獲得本揭示的電子零件裝置。 作為利用電磁波屏蔽用燒結體覆蓋電子零件或支撐構件的方法,可列舉如下方法:於欲用電磁波屏蔽用燒結體覆蓋的部位賦予清漆狀的電磁波屏蔽用組成物,並進行乾燥、加熱。作為賦予方法,可列舉:網版印刷法、噴霧塗佈法等。乾燥條件及乾燥方法與製造所述電磁波屏蔽用片時的條件及方法相同。另外,加熱條件及加熱方法與製造所述電磁波屏蔽用燒結體時的條件及方法相同。 另外,亦可列舉如下方法:於欲用電磁波屏蔽用燒結體覆蓋的部位配置本揭示的電磁波屏蔽用片,並進行加熱。電磁波屏蔽用片的加熱條件及加熱方法與製造所述電磁波屏蔽用燒結體時的條件及方法相同。<Electronic component device> The electronic component device of the present disclosure has an area covered by the sintered body for electromagnetic wave shielding of the present disclosure. Examples of electronic component devices include: lead frames, wiring-completed tape carriers, wiring boards, glass, silicon wafers, and other supporting members, mounted with semiconductor chips, transistors, diodes, thyristors, and other active components, capacitors , Resistors, resistor arrays, coils, switches and other passive components and other electronic components. By using the electromagnetic wave shielding sintered body of the present disclosure to cover the locations where electromagnetic waves are generated or the locations that are susceptible to electromagnetic waves in the electronic component and the supporting member, the electronic component device of the present disclosure can be obtained. As a method of covering an electronic component or a supporting member with a sintered body for electromagnetic wave shielding, a method of applying a varnish-like electromagnetic wave shielding composition to a site to be covered with the sintered body for electromagnetic wave shielding, drying and heating is exemplified. As an application method, a screen printing method, a spray coating method, etc. are mentioned. The drying conditions and the drying method are the same as those at the time of manufacturing the electromagnetic wave shielding sheet. In addition, the heating conditions and the heating method are the same as those when the sintered body for electromagnetic wave shielding is manufactured. In addition, a method of arranging the electromagnetic wave shielding sheet of the present disclosure on a site to be covered with the sintered body for electromagnetic wave shielding, and heating it. The heating conditions and heating method of the electromagnetic wave shielding sheet are the same as the conditions and methods when the sintered body for electromagnetic wave shielding is manufactured.

本揭示的電子零件裝置亦可包括:支撐構件、配置於支撐構件上的電子零件、密封電子零件的密封材料的硬化物、以及配置於密封材料的硬化物的表面的本揭示的電磁波屏蔽用燒結體。於在密封材料的硬化物的表面配置電磁波屏蔽用燒結體的情況下,可於使密封材料硬化後在密封材料的硬化物的表面形成電磁波屏蔽用燒結體,亦可於硬化前的密封材料的表面配置電磁波屏蔽用組成物或電磁波屏蔽用片,一併進行密封材料的硬化與電磁波屏蔽用燒結體的形成。The electronic component device of the present disclosure may also include: a support member, an electronic component arranged on the support member, a hardened material of a sealing material that seals the electronic component, and the electromagnetic wave shielding sintering of the present disclosure arranged on the surface of the hardened material of the sealing material body. When the sintered body for electromagnetic wave shielding is arranged on the surface of the hardened material of the sealing material, the sintered body for electromagnetic wave shielding can be formed on the surface of the hardened material of the sealing material after the sealing material is hardened. An electromagnetic wave shielding composition or an electromagnetic wave shielding sheet is arranged on the surface, and the sealing material is cured and the electromagnetic wave shielding sintered body is formed together.

電子零件裝置亦可進而包括收容電子零件及支撐構件的框體。於電子零件及支撐構件被收容於框體內的情況下,藉由用本揭示的電磁波屏蔽用燒結體覆蓋框體的內表面及外表面的至少一者,可獲得本揭示的電子零件裝置。 用電磁波屏蔽用燒結體覆蓋框體的內表面或外表面的方法與用電磁波屏蔽用燒結體覆蓋電子零件或支撐構件的方法相同。The electronic component device may further include a frame for accommodating the electronic component and the supporting member. When the electronic component and the supporting member are contained in the housing, the electronic component device of the present disclosure can be obtained by covering at least one of the inner surface and the outer surface of the housing with the sintered body for electromagnetic wave shielding of the present disclosure. The method of covering the inner or outer surface of the frame with the sintered body for electromagnetic wave shielding is the same as the method of covering the electronic parts or supporting members with the sintered body for electromagnetic wave shielding.

於電子零件裝置的由電磁波屏蔽用燒結體覆蓋的區域中,就接著強度的觀點而言,較佳為於電子零件、支撐構件、框體等由電磁波屏蔽用燒結體被覆的構件(被覆構件)與電磁波屏蔽用燒結體的界面中不會產生孔隙等空隙。 於本揭示中,在由電磁波屏蔽用燒結體覆蓋的區域中,在觀察被覆構件與電磁波屏蔽用燒結體的界面時,被覆構件與電磁波屏蔽用燒結體未接著的部位的長度於觀察區域中的界面的長度中所佔的比例(以下,有時稱為空隙率)較佳為5%以下,更佳為3%以下,進而佳為1%以下。 觀察區域中的界面的長度、以及被覆構件與電磁波屏蔽用燒結體未接著的部位於觀察區域中的界面的長度中所佔的長度可由如下圖像、即使用掃描式電子顯微鏡(Scanning Electron Microscope,SEM)以3000倍的條件對由電磁波屏蔽用燒結體覆蓋的區域的剖面進行拍攝而得的圖像求出。 [實施例]In the area covered by the electromagnetic wave shielding sintered body of the electronic component device, from the standpoint of adhesive strength, it is preferable to use electronic parts, support members, frames, etc., which are covered by the electromagnetic wave shielding sintered body (coating member) No voids such as voids are generated in the interface with the sintered body for electromagnetic wave shielding. In the present disclosure, in the area covered by the sintered body for electromagnetic wave shielding, when the interface between the covering member and the sintered body for electromagnetic wave shielding is observed, the length of the portion where the covering member and the sintered body for electromagnetic wave shielding are not adhered is greater than that in the observation area The ratio of the length of the interface (hereinafter, referred to as porosity) is preferably 5% or less, more preferably 3% or less, and still more preferably 1% or less. The length of the interface in the observation area, and the length of the interface between the covering member and the sintered body for electromagnetic wave shielding that are not bonded to the sintered body for electromagnetic wave shielding occupies the following image, that is, using a scanning electron microscope (Scanning Electron Microscope, SEM) The image obtained by photographing the cross section of the area covered by the sintered body for electromagnetic wave shielding under the condition of 3000 times. [Example]

以下,藉由實施例更具體地說明本揭示,但本揭示並不限定於以下實施例。Hereinafter, the present disclosure will be explained in more detail through examples, but the present disclosure is not limited to the following examples.

[實施例1A] 將作為金屬粒子A的Cu粒子(品名:1400YM,三井金屬礦業股份有限公司,平均粒子徑:4 μm)61質量份、作為金屬粒子B的Sn-Bi58粒子(品名:STC-3,三井金屬礦業股份有限公司,平均粒子徑:3 μm)30質量份、作為樹脂的環氧樹脂4質量份、作為松香的BHPA 0.7質量份、作為活性劑的三乙醇胺1.8質量份、作為硬化促進劑的咪唑0.2質量份、作為溶劑的己基卡必醇2.3質量份混合,製作樹脂清漆1A。 利用間隙被設定為50 μm的敷料器將樹脂清漆1A塗敷於聚醯亞胺膜上,製作塗膜。其後,於100℃下乾燥30分鐘,於氮氣環境的回焊爐中以150℃進行10分鐘加熱處理,獲得燒結體。燒結體的平均厚度為15 μm。將該燒結體的一部分與基底(ground)接合而製成試驗片。[Example 1A] 61 parts by mass of Cu particles (product name: 1400YM, Mitsui Metals Mining Co., Ltd., average particle diameter: 4 μm) as metal particles A, and Sn-Bi58 particles (product name: STC-3, Mitsui Metals Mining) as metal particles B Co., Ltd., average particle size: 3 μm) 30 parts by mass, 4 parts by mass of epoxy resin as resin, 0.7 parts by mass of BHPA as rosin, 1.8 parts by mass of triethanolamine as activator, and 0.2 parts by mass of imidazole as hardening accelerator Parts by mass and 2.3 parts by mass of hexylcarbitol as a solvent were mixed to prepare resin varnish 1A. The resin varnish 1A was coated on the polyimide film using an applicator whose gap was set to 50 μm to produce a coating film. Thereafter, it was dried at 100°C for 30 minutes, and heat-treated at 150°C for 10 minutes in a reflow furnace in a nitrogen atmosphere to obtain a sintered body. The average thickness of the sintered body is 15 μm. A part of this sintered body was joined to a ground to form a test piece.

[實施例2A] 將作為金屬粒子A的Cu粒子(品名:CH-0200,三井金屬礦業股份有限公司,平均粒子徑:0.2 μm)30質量份、作為金屬粒子B的Sn-Bi58粒子(品名:STC-3,三井金屬礦業股份有限公司,平均粒子徑:3 μm)60質量份、作為樹脂的環氧樹脂4質量份、作為松香的BHPA 0.7質量份、作為活性劑的三乙醇胺2.8質量份、作為硬化促進劑的咪唑0.2質量份、作為溶劑的己基卡必醇2.3質量份混合,製作樹脂清漆2A。 利用間隙被設定為10 μm的敷料器將樹脂清漆2A塗敷於聚醯亞胺膜上,製作塗膜。其後,於100℃下乾燥30分鐘,於氮氣環境的回焊爐中以150℃進行10分鐘加熱處理,獲得燒結體。燒結體的平均厚度為9 μm。將該燒結體的一部分與基底接合而製成試驗片。[Example 2A] 30 parts by mass of Cu particles (product name: CH-0200, Mitsui Metal Mining Co., Ltd., average particle diameter: 0.2 μm) as metal particles A and Sn-Bi58 particles (product name: STC-3, Mitsui Metal Mining Co., Ltd., average particle diameter: 3 μm) 60 parts by mass, 4 parts by mass of epoxy resin as resin, 0.7 parts by mass of BHPA as rosin, 2.8 parts by mass of triethanolamine as activator, and hardening accelerator 0.2 parts by mass of imidazole and 2.3 parts by mass of hexylcarbitol as a solvent were mixed to prepare resin varnish 2A. The resin varnish 2A was coated on the polyimide film with an applicator whose gap was set to 10 μm to produce a coating film. Thereafter, it was dried at 100°C for 30 minutes, and heat-treated at 150°C for 10 minutes in a reflow furnace in a nitrogen atmosphere to obtain a sintered body. The average thickness of the sintered body was 9 μm. A part of this sintered body was joined to the base to form a test piece.

[實施例3A] 將作為金屬粒子A的Cu粒子(品名:CH-0200,三井金屬礦業股份有限公司,平均粒子徑:0.2 μm)21質量份、作為第一金屬粒子B的Sn粒子(品名:Sn100,STC-3,三井金屬礦業股份有限公司,平均粒子徑:3 μm)34質量份、作為第二金屬粒子B的Sn-Bi58粒子(品名:SnBi58,STC-3,三井金屬礦業股份有限公司,平均粒子徑:3 μm)34質量份、作為樹脂的環氧樹脂1.1質量份、作為松香的BHPA 2.0質量份、作為活性劑的三乙醇胺7.5質量份、作為硬化促進劑的咪唑0.1質量份、作為溶劑的己基卡必醇0.3質量份混合,製作樹脂清漆3A。 利用間隙被設定為50 μm的敷料器將樹脂清漆3A塗敷於聚醯亞胺膜上,製作塗膜。其後,於100℃下乾燥30分鐘,於氮氣環境的回焊爐中以150℃進行10分鐘加熱處理,獲得燒結體。燒結體的平均厚度為15 μm。將該燒結體的一部分與基底接合而製成試驗片。[Example 3A] 21 parts by mass of Cu particles (product name: CH-0200, Mitsui Metal Mining Co., Ltd., average particle diameter: 0.2 μm) as the metal particle A, and Sn particles (product name: Sn100, STC-3) as the first metal particle B , Mitsui Metal Mining Co., Ltd., average particle diameter: 3 μm) 34 parts by mass, Sn-Bi58 particles as the second metal particle B (product name: SnBi58, STC-3, Mitsui Metal Mining Co., Ltd., average particle diameter: 3 μm) 34 parts by mass, 1.1 parts by mass of epoxy resin as resin, 2.0 parts by mass of BHPA as rosin, 7.5 parts by mass of triethanolamine as activator, 0.1 parts by mass of imidazole as hardening accelerator, and hexyl card as solvent 0.3 parts by mass of ethanol was mixed to prepare resin varnish 3A. The resin varnish 3A was coated on the polyimide film using an applicator whose gap was set to 50 μm to produce a coating film. Thereafter, it was dried at 100°C for 30 minutes, and heat-treated at 150°C for 10 minutes in a reflow furnace in a nitrogen atmosphere to obtain a sintered body. The average thickness of the sintered body was 15 μm. A part of this sintered body was joined to the base to form a test piece.

[比較例1] 將作為金屬粒子的銀塗佈銅粉(品名:1400YP,三井金屬礦業股份有限公司,平均粒子徑:10 μm)61質量份、作為樹脂的環氧樹脂32質量份、作為硬化促進劑的咪唑4質量份、作為溶劑的乙酸丁酯230質量份混合,製作樹脂清漆3。 利用間隙被設定為200 μm的敷料器將樹脂清漆3塗敷於聚醯亞胺膜上,製作塗膜。其後,於50℃下乾燥1小時,以150℃進行1小時加熱處理,獲得燒結體。燒結體的平均厚度為15 μm。將該燒結體的一部分與基底接合而製成試驗片。[Comparative Example 1] 61 parts by mass of silver-coated copper powder (product name: 1400YP, Mitsui Metals Mining Co., Ltd., average particle diameter: 10 μm) as metal particles, 32 parts by mass of epoxy resin as resin, and imidazole 4 as hardening accelerator Parts by mass and 230 parts by mass of butyl acetate as a solvent were mixed to prepare resin varnish 3. The resin varnish 3 was coated on the polyimide film using an applicator whose gap was set to 200 μm to produce a coating film. Then, it dried at 50 degreeC for 1 hour, and heat-processed at 150 degreeC for 1 hour, and obtained the sintered compact. The average thickness of the sintered body is 15 μm. A part of this sintered body was joined to the base to form a test piece.

<評價> (電磁波屏蔽效果的測定) 電磁波屏蔽效果是利用以下所示的KEC法進行評價。 將所獲得的試驗片設置於電磁波屏蔽效果測定裝置(一般社團法人KEC關西電子工業振興中心)的測定部,自上下夾住試驗片進行固定。該裝置可產生電場成分大的電磁波與磁場成分大的電磁波兩者。根據無試驗片時的接收電磁波的強度與設置有試驗片時的接收電磁波強度的比,評價電磁波屏蔽效果。<Evaluation> (Measurement of electromagnetic wave shielding effect) The electromagnetic wave shielding effect was evaluated by the KEC method shown below. The obtained test piece was set in the measurement section of the electromagnetic wave shielding effect measuring device (KEC Kansai Electronics Industry Promotion Center), and the test piece was clamped and fixed from above and below. The device can generate both electromagnetic waves with large electric field components and electromagnetic waves with large magnetic field components. The electromagnetic wave shielding effect is evaluated based on the ratio of the intensity of the received electromagnetic wave when there is no test piece to the intensity of the received electromagnetic wave when the test piece is installed.

(體積電阻率) 對於所獲得的燒結體,於25℃的環境下利用所述方法測定體積電阻率。實施例1A的燒結體的體積電阻率為6×10-5 Ω·cm,實施例2A的燒結體的體積電阻率為9×10-5 Ω·cm,實施例3A的燒結體的體積電阻率為9×10-5 Ω·cm,比較例1的燒結體的體積電阻率為6×10-4 Ω·cm。(Volume resistivity) With respect to the obtained sintered body, the volume resistivity was measured by the method described above in an environment of 25°C. The volume resistivity of the sintered body of Example 1A was 6×10 -5 Ω·cm, the volume resistivity of the sintered body of Example 2A was 9×10 -5 Ω·cm, and the volume resistivity of the sintered body of Example 3A It was 9×10 -5 Ω·cm, and the volume resistivity of the sintered body of Comparative Example 1 was 6×10 -4 Ω·cm.

圖1中示出實施例1A及實施例2A以及比較例1中所製作的燒結體的電磁波屏蔽效果的測定結果。得知:利用TLPS使金屬粒子燒結的實施例的燒結體與比較例1的燒結體相比較,可獲得高的電磁波屏蔽效果。FIG. 1 shows the measurement results of the electromagnetic wave shielding effect of the sintered bodies produced in Example 1A, Example 2A, and Comparative Example 1. As shown in FIG. It is found that the sintered body of the example in which the metal particles are sintered by TLPS can obtain a high electromagnetic wave shielding effect compared with the sintered body of Comparative Example 1.

[實施例1B] 將作為金屬粒子A的Cu粒子(品名:1400YM,三井金屬礦業股份有限公司,平均粒子徑:4 μm)19.5質量份、作為金屬粒子B的Sn-Bi58粒子(品名:STC-3,三井金屬礦業股份有限公司,平均粒子徑:3 μm,熔點:138℃)54.3質量份、作為樹脂的環氧樹脂0.4質量份、作為助焊劑成分的丙酸(沸點:141℃)4.4質量份、作為活性劑的三乙醇胺(熔點:20.5℃,沸點:335℃、(20 hPa下為208℃))9.0質量份、作為硬化促進劑的咪唑0.1質量份、作為溶劑的己基卡必醇12.3質量份混合,製作樹脂清漆1B。 利用間隙被設定為50 μm的敷料器將樹脂清漆1B塗敷於聚醯亞胺膜上,製作塗膜。其後,於100℃下乾燥30分鐘,於大氣環境的回焊爐中以150℃進行10分鐘加熱處理,獲得燒結體。燒結體的平均厚度為15 μm。將該燒結體的一部分與基底接合而製成試驗片。 再者,於實施例1B中,由於α(℃)為141℃,β(℃)為138℃,因此滿足β-20≦α≦β+20。[Example 1B] 19.5 parts by mass of Cu particles (product name: 1400YM, Mitsui Metal Mining Co., Ltd., average particle diameter: 4 μm) as metal particles A, and Sn-Bi58 particles (product name: STC-3, Mitsui Metals Mining) as metal particles B Co., Ltd., average particle diameter: 3 μm, melting point: 138°C) 54.3 parts by mass, epoxy resin 0.4 parts by mass as resin, and propionic acid (boiling point: 141°C) as flux component 4.4 parts by mass, as activator 9.0 parts by mass of triethanolamine (melting point: 20.5°C, boiling point: 335°C, (208°C at 20 hPa)), 0.1 parts by mass of imidazole as a hardening accelerator, and 12.3 parts by mass of hexyl carbitol as a solvent are mixed to produce Resin varnish 1B. The resin varnish 1B was coated on the polyimide film with an applicator whose gap was set to 50 μm to produce a coating film. Thereafter, it was dried at 100°C for 30 minutes, and heat-treated at 150°C for 10 minutes in a reflow furnace in an atmospheric environment to obtain a sintered body. The average thickness of the sintered body was 15 μm. A part of this sintered body was joined to the base to form a test piece. Furthermore, in Example 1B, since α (°C) is 141°C and β (°C) is 138°C, β-20≦α≦β+20 is satisfied.

[實施例2B] 於實施例1B中,將助焊劑成分自丙酸變更為4-胺基水楊酸(熔點:150℃),除此以外,與實施例1B同樣地製作樹脂清漆2B,繼而,使用樹脂清漆2B獲得燒結體及試驗片。 再者,於實施例2B中,由於α(℃)為150℃,β(℃)為138℃,因此滿足β-20≦α≦β+20。[Example 2B] In Example 1B, except that the flux component was changed from propionic acid to 4-aminosalicylic acid (melting point: 150°C), a resin varnish 2B was produced in the same manner as in Example 1B, and then resin varnish 2B was used Obtain a sintered body and a test piece. Furthermore, in Example 2B, since α (°C) is 150°C and β (°C) is 138°C, β-20≦α≦β+20 is satisfied.

[實施例3B] 於實施例1B中,將助焊劑成分自丙酸變更為2,2-雙(羥基甲基)丙酸(BHPA,熔點:185℃),除此以外,與實施例1B同樣地製作樹脂清漆3B,繼而,使用樹脂清漆3B獲得燒結體及試驗片。 再者,於實施例3B中,由於α(℃)為185℃,β(℃)為138℃,因此並不滿足β-20≦α≦β+20。[Example 3B] In Example 1B, except that the flux component was changed from propionic acid to 2,2-bis(hydroxymethyl)propionic acid (BHPA, melting point: 185°C), a resin varnish 3B was produced in the same manner as in Example 1B. Then, the resin varnish 3B was used to obtain a sintered body and a test piece. Furthermore, in Example 3B, since α (°C) is 185°C and β (°C) is 138°C, β-20≦α≦β+20 is not satisfied.

(外觀評價) 對於所獲得的燒結體,用目視確認外觀。於實施例1B及實施例2B的燒結體中,表面為灰色,表面的氧化得到抑制。另一方面,於實施例3B的燒結體中,表面為紅褐色,與實施例1B及實施例2B相比較,表面進一步被氧化。(Appearance evaluation) The appearance of the obtained sintered body was visually confirmed. In the sintered bodies of Example 1B and Example 2B, the surface was gray, and oxidation of the surface was suppressed. On the other hand, in the sintered body of Example 3B, the surface was reddish brown, and compared with Example 1B and Example 2B, the surface was further oxidized.

(體積電阻率的測定) 對於所獲得的燒結體,於25℃的環境下利用所述方法測定體積電阻率。將結果示於表1中。(Measurement of volume resistivity) With respect to the obtained sintered body, the volume resistivity was measured by the method described above in an environment of 25°C. The results are shown in Table 1.

(高溫高濕試驗後的體積電阻率的測定) 自片狀的電磁波屏蔽用燒結體切出一邊的長度為15 mm的正四邊形的板狀樣品,將板狀樣品投入85℃、85%RH(相對濕度)的恆溫恆濕槽中,並靜置100小時。其後,與所述(體積電阻率的測定)同樣地測定高溫高濕試驗後的體積電阻率。 將結果示於表1中。(Measurement of volume resistivity after high temperature and high humidity test) Cut out a 15 mm square plate-shaped sample from the sheet-shaped sintered body for electromagnetic wave shielding. Put the plate-shaped sample into a constant temperature and humidity bath at 85°C and 85%RH (relative humidity) and let it stand still. 100 hours. After that, the volume resistivity after the high-temperature and high-humidity test was measured in the same manner as described above (Measurement of Volume Resistivity). The results are shown in Table 1.

[表1]   實施例1B 實施例2B 實施例3B 外觀 灰色 灰色 紅褐色 體積電阻率 (Ω·cm) 5.7×10-5 5.4×10-5 5.6×10-5 高溫高濕試驗後的 體積電阻率(Ω·cm) 5.7×10-5 5.4×10-5 1.8×10-4 高溫高濕試驗後的外觀 灰色 灰色 綠青色 [Table 1] Example 1B Example 2B Example 3B Exterior gray gray Reddish brown Volume resistivity (Ω·cm) 5.7×10 -5 5.4×10 -5 5.6×10 -5 Volume resistivity after high temperature and high humidity test (Ω·cm) 5.7×10 -5 5.4×10 -5 1.8×10 -4 Appearance after high temperature and high humidity test gray gray Green cyan

如表1所示,實施例1B及實施例2B中所製作的燒結體與實施例3B中所製作的燒結體相比較,表面的氧化得到抑制。 進而,實施例1B及實施例2B中所製作的燒結體、與實施例3B中所製作的燒結體在未進行高溫高濕試驗時體積電阻率為相同程度。另一方面,關於高溫高濕試驗後的體積電阻率,實施例1B及實施例2B中所製作的燒結體與實施例3B中所製作的燒結體相比較,體積電阻率的值低,特性的降低得到抑制。 再者,於使用實施例1B、實施例2B及實施例3B的電磁波屏蔽用組成物與實施例1A同樣地在氮氣環境下進行燒結處理的情況下,實施例1B及實施例2B中所製作的燒結體、與實施例3B中所製作的燒結體在未進行高溫高濕試驗時體積電阻率為相同程度。進而,實施例3B中所製作的燒結體與實施例1B及實施例2B中所製作的燒結體同樣地,表面的氧化得到抑制。As shown in Table 1, compared with the sintered body produced in Example 3B, the sintered bodies produced in Example 1B and Example 2B have suppressed surface oxidation. Furthermore, the volume resistivity of the sintered body produced in Example 1B and Example 2B and the sintered body produced in Example 3B were about the same when the high-temperature and high-humidity test was not performed. On the other hand, regarding the volume resistivity after the high-temperature and high-humidity test, the sintered body produced in Example 1B and Example 2B has a lower volume resistivity value than the sintered body produced in Example 3B, and the characteristics are Decrease is suppressed. Furthermore, when the electromagnetic wave shielding composition of Example 1B, Example 2B, and Example 3B was used for sintering treatment in a nitrogen atmosphere in the same manner as Example 1A, the products produced in Example 1B and Example 2B The sintered body has the same volume resistivity as the sintered body produced in Example 3B when the high-temperature and high-humidity test is not performed. Furthermore, the sintered body produced in Example 3B was the same as the sintered body produced in Example 1B and Example 2B, and oxidation of the surface was suppressed.

[實施例1C] 將作為金屬粒子A的Cu粒子(品名:1400YM,三井金屬礦業股份有限公司,平均粒子徑:4 μm)82.2質量份、作為金屬粒子B的Sn-Bi58粒子(品名:STC-3,三井金屬礦業股份有限公司,平均粒子徑:3 μm)17.8質量份、作為樹脂的環氧樹脂4質量份、作為松香的BHPA 0.7質量份、作為活性劑的三乙醇胺2.8質量份、作為硬化促進劑的咪唑0.2質量份、作為溶劑的己基卡必醇2.3質量份混合,製作樹脂清漆1C。 利用間隙被設定為50 μm的敷料器將樹脂清漆1C塗敷於聚醯亞胺膜上,製作塗膜。其後,於100℃下乾燥30分鐘,於氮氣環境的回焊爐中以150℃進行10分鐘加熱處理,獲得燒結體。燒結體的平均厚度為15 μm。將該燒結體的一部分與基底接合而製成試驗片。[Example 1C] 82.2 parts by mass of Cu particles (product name: 1400YM, Mitsui Metal Mining Co., Ltd., average particle diameter: 4 μm) as metal particle A, and Sn-Bi58 particles (product name: STC-3, Mitsui Metal Mining Co., Ltd.) as metal particle B Co., Ltd., average particle size: 3 μm) 17.8 parts by mass, 4 parts by mass of epoxy resin as resin, 0.7 parts by mass of BHPA as rosin, 2.8 parts by mass of triethanolamine as activator, and 0.2 parts by mass of imidazole as hardening accelerator Parts by mass and 2.3 parts by mass of hexylcarbitol as a solvent were mixed to prepare resin varnish 1C. The resin varnish 1C was coated on the polyimide film with an applicator whose gap was set to 50 μm to produce a coating film. Thereafter, it was dried at 100°C for 30 minutes, and heat-treated at 150°C for 10 minutes in a reflow furnace in a nitrogen atmosphere to obtain a sintered body. The average thickness of the sintered body was 15 μm. A part of this sintered body was joined to the base to form a test piece.

[實施例2C] 將作為金屬粒子A的Cu粒子(品名:1400YM,三井金屬礦業股份有限公司,平均粒子徑:4 μm)30質量份、作為金屬粒子B的Sn-Bi58粒子(品名:STC-3,三井金屬礦業股份有限公司,平均粒子徑:3 μm)60質量份、作為樹脂的環氧樹脂4質量份、作為松香的BHPA 0.3質量份、作為活性劑的三乙醇胺2.8質量份、作為硬化促進劑的咪唑0.2質量份、作為溶劑的己基卡必醇2.3質量份混合,製作樹脂清漆2C。 利用間隙被設定為50 μm的敷料器將樹脂清漆2C塗敷於聚醯亞胺膜上,製作塗膜。其後,於100℃下乾燥30分鐘,於氮氣環境的回焊爐中以150℃進行10分鐘加熱處理,獲得燒結體。燒結體的平均厚度為15 μm。將該燒結體的一部分與基底接合而製成試驗片。[Example 2C] 30 parts by mass of Cu particles (product name: 1400YM, Mitsui Metals Mining Co., Ltd., average particle diameter: 4 μm) as metal particles A, and Sn-Bi58 particles (product name: STC-3, Mitsui Metals Mining) as metal particles B Co., Ltd., average particle size: 3 μm) 60 parts by mass, 4 parts by mass of epoxy resin as resin, 0.3 parts by mass of BHPA as rosin, 2.8 parts by mass of triethanolamine as activator, and 0.2 parts by mass of imidazole as hardening accelerator Parts by mass and 2.3 parts by mass of hexylcarbitol as a solvent were mixed to prepare resin varnish 2C. The resin varnish 2C was coated on the polyimide film with an applicator whose gap was set to 50 μm to produce a coating film. Thereafter, it was dried at 100°C for 30 minutes, and heat-treated at 150°C for 10 minutes in a reflow furnace in a nitrogen atmosphere to obtain a sintered body. The average thickness of the sintered body is 15 μm. A part of this sintered body was joined to the base to form a test piece.

<評價> (溫度循環試驗) 對於所製作的試驗片,以-45℃~125℃、各15分鐘的熱循環處理1000個循環,利用所述方法求出熱循環試驗處理前(0個循環)、500個循環後、750個循環後及1000個循環後的時間點的體積電阻率。 將所獲得的結果示於表2中。<Evaluation> (Temperature cycle test) The prepared test piece was treated with a thermal cycle of -45°C to 125°C for 15 minutes each for 1000 cycles, and the method was used to determine the thermal cycle test before treatment (0 cycles), after 500 cycles, and 750 Volume resistivity at the time point after the cycle and after 1000 cycles. The obtained results are shown in Table 2.

[表2]   0個循環 500個循環後 750個循環後 1000個循環後 實施例1C 2.5×10-4 2.6×10-4 2.5×10-4 2.4×10-4 實施例2C 1.3×10-4 1.8×10-4 3.0×10-4 7.8×10-4 單位為Ω·cm[Table 2] 0 cycles After 500 cycles After 750 cycles After 1000 cycles Example 1C 2.5×10 -4 2.6×10 -4 2.5×10 -4 2.4×10 -4 Example 2C 1.3×10 -4 1.8×10 -4 3.0×10 -4 7.8×10 -4 The unit is Ω·cm

如根據表2而明確般,實施例1C中所製作的燒結體與實施例2C中所製作的燒結體相比,伴隨溫度循環試驗的循環數的增加的、體積電阻率的上升得到抑制,體積電阻率的耐溫度循環特性優異。As is clear from Table 2, compared with the sintered body produced in Example 2C, the sintered body produced in Example 1C has an increase in volume resistivity due to an increase in the number of cycles of the temperature cycle test, and the volume resistivity is suppressed. The resistivity is excellent in temperature cycle resistance.

關於2019年9月27日提出申請的日本專利申請案2019-177659號、及2020年6月11日提出申請的日本專利申請案2020-101849號的揭示,將其整體藉由參照而併入本說明書中。 關於本說明書中所記載的所有文獻、專利申請案、及技術規格,與具體且各個地記載有藉由參照而併入各個文獻、專利申請案、及技術規格的情況相同程度地,引用且併入至本說明書中。Regarding the disclosure of Japanese Patent Application No. 2019-177659 filed on September 27, 2019, and Japanese Patent Application No. 2020-101849 filed on June 11, 2020, the entirety is incorporated herein by reference. In the manual. Regarding all documents, patent applications, and technical specifications described in this specification, they are cited and incorporated to the same extent as the cases where each document, patent application, and technical specifications are specifically and individually described and incorporated by reference. Into this manual.

no

圖1是表示燒結體的電磁波屏蔽效果的測定結果的圖。Fig. 1 is a graph showing the measurement result of the electromagnetic wave shielding effect of the sintered body.

Claims (21)

一種電磁波屏蔽用組成物,含有金屬粒子A、熔點比所述金屬粒子A低的金屬粒子B、以及樹脂,且 於所述金屬粒子A與所述金屬粒子B之間能夠進行暫態液相燒結。An electromagnetic wave shielding composition containing metal particles A, metal particles B having a lower melting point than the metal particles A, and resin, and Between the metal particles A and the metal particles B, transient liquid phase sintering can be performed. 如請求項1所述的電磁波屏蔽用組成物,其中所述金屬粒子B的熔點為300℃以下。The electromagnetic wave shielding composition according to claim 1, wherein the melting point of the metal particles B is 300°C or less. 如請求項1或請求項2所述的電磁波屏蔽用組成物,其中所述金屬粒子A包含Cu,所述金屬粒子B包含Sn。The electromagnetic wave shielding composition according to claim 1 or 2, wherein the metal particles A include Cu, and the metal particles B include Sn. 如請求項3所述的電磁波屏蔽用組成物,其中以質量基準計,Cu於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率與Sn於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率的比(Cu含有率/Sn含有率)為0.6~21。The electromagnetic wave shielding composition according to claim 3, wherein the content ratio of Cu in the whole of the metal particles A and the metal particles B and the content of Sn in the metal particles A and the metal particles A on a mass basis The ratio (Cu content/Sn content) of the content ratio (Cu content ratio/Sn content ratio) occupied by the whole of the metal particles B is 0.6-21. 如請求項3所述的電磁波屏蔽用組成物,其中以質量基準計,Cu於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率與Sn於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率的比(Cu含有率/Sn含有率)為1.6~64。The electromagnetic wave shielding composition according to claim 3, wherein the content ratio of Cu in the whole of the metal particles A and the metal particles B and the content of Sn in the metal particles A and the metal particles A on a mass basis The ratio of the content rate (Cu content rate/Sn content rate) occupied by the whole of the metal particles B is 1.6 to 64. 如請求項3至請求項5中任一項所述的電磁波屏蔽用組成物,其中所述金屬粒子B進而包含Bi,且 以質量基準計,Cu於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率與Bi於所述金屬粒子A及所述金屬粒子B的整體中所佔的含有率的比(Cu含有率/Bi含有率)為1.1~44。The electromagnetic wave shielding composition according to any one of claims 3 to 5, wherein the metal particles B further include Bi, and On a mass basis, the ratio of the content rate of Cu in the entirety of the metal particles A and the metal particles B to the content rate of Bi in the entirety of the metal particles A and the metal particles B (Cu content rate/Bi content rate) is 1.1-44. 如請求項1至請求項6中任一項所述的電磁波屏蔽用組成物,其中所述金屬粒子A及所述金屬粒子B於固體成分整體中所佔的合計比例為96質量%以下。The electromagnetic wave shielding composition according to any one of claims 1 to 6, wherein the total proportion of the metal particles A and the metal particles B in the entire solid content is 96% by mass or less. 如請求項1至請求項7中任一項所述的電磁波屏蔽用組成物,其中所述樹脂包含熱硬化性樹脂。The electromagnetic wave shielding composition according to any one of claims 1 to 7, wherein the resin includes a thermosetting resin. 如請求項8所述的電磁波屏蔽用組成物,進而含有硬化劑。The electromagnetic wave shielding composition according to claim 8 further contains a curing agent. 如請求項8或請求項9所述的電磁波屏蔽用組成物,進而含有硬化促進劑。The electromagnetic wave shielding composition according to Claim 8 or Claim 9 further contains a hardening accelerator. 如請求項1至請求項10中任一項所述的電磁波屏蔽用組成物,進而含有助焊劑成分。The electromagnetic wave shielding composition according to any one of claims 1 to 10 further contains a flux component. 如請求項11所述的電磁波屏蔽用組成物,其中所述助焊劑成分含有松香及活性劑的至少一者。The electromagnetic wave shielding composition according to claim 11, wherein the flux component contains at least one of rosin and an active agent. 如請求項12所述的電磁波屏蔽用組成物,其中所述松香包含2,2-雙(羥基甲基)丙酸,所述活性劑包含三乙醇胺。The electromagnetic wave shielding composition according to claim 12, wherein the rosin contains 2,2-bis(hydroxymethyl)propionic acid, and the active agent contains triethanolamine. 如請求項11所述的電磁波屏蔽用組成物,其中於將所述助焊劑成分發生相變的溫度設為α(℃)、將所述金屬粒子B的熔點設為β(℃)時,所述助焊劑成分滿足β-20≦α≦β+20。The electromagnetic wave shielding composition according to claim 11, wherein when the temperature at which the flux component undergoes a phase change is α (°C) and the melting point of the metal particles B is β (°C), The flux composition satisfies β-20≦α≦β+20. 如請求項14所述的電磁波屏蔽用組成物,其中所述助焊劑成分發生相變的溫度為130℃~160℃。The electromagnetic wave shielding composition according to claim 14, wherein the temperature at which the flux component undergoes a phase change is 130°C to 160°C. 如請求項14或請求項15所述的電磁波屏蔽用組成物,其中所述助焊劑成分為選自由丙酸、4-胺基水楊酸及3-(苄基胺基)丙酸乙酯所組成的群組中的至少一種。The electromagnetic wave shielding composition according to claim 14 or claim 15, wherein the flux component is selected from propionic acid, 4-aminosalicylic acid and ethyl 3-(benzylamino)propionate. At least one of the formed groups. 如請求項1至請求項16中任一項所述的電磁波屏蔽用組成物,進而含有溶劑。The electromagnetic wave shielding composition according to any one of claims 1 to 16 further contains a solvent. 一種電磁波屏蔽用片,具有包含如請求項1至請求項17中任一項所述的電磁波屏蔽用組成物的樹脂組成物層。An electromagnetic wave shielding sheet having a resin composition layer containing the electromagnetic wave shielding composition according to any one of claims 1 to 17. 一種電磁波屏蔽用燒結體,其為如請求項1至請求項17中任一項所述的電磁波屏蔽用組成物或如請求項18所述的電磁波屏蔽用片的燒結體。A sintered body for electromagnetic wave shielding, which is a sintered body of the electromagnetic wave shielding composition according to any one of claims 1 to 17 or the electromagnetic wave shielding sheet according to claim 18. 如請求項19所述的電磁波屏蔽用燒結體,其中體積電阻率為3×10-4 Ω·cm以下。The sintered body for electromagnetic wave shielding according to claim 19, wherein the volume resistivity is 3×10 -4 Ω·cm or less. 一種電子零件裝置,具有由如請求項19或請求項20所述的電磁波屏蔽用燒結體覆蓋的區域。An electronic component device having an area covered by the sintered body for electromagnetic wave shielding as described in claim 19 or claim 20.
TW109133531A 2019-09-27 2020-09-26 Composition for electromagnetic wave shielding, sheet for electromagnetic wave shielding, sintered body for electromagnetic wave shielding, and electronic component device TW202113877A (en)

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