TW202111107A - 洗淨液及具備金屬阻劑之支撐體的洗淨方法 - Google Patents
洗淨液及具備金屬阻劑之支撐體的洗淨方法 Download PDFInfo
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- TW202111107A TW202111107A TW109111715A TW109111715A TW202111107A TW 202111107 A TW202111107 A TW 202111107A TW 109111715 A TW109111715 A TW 109111715A TW 109111715 A TW109111715 A TW 109111715A TW 202111107 A TW202111107 A TW 202111107A
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- Prior art keywords
- cleaning
- metal
- support
- acid
- cleaning solution
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 83
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- SEGLCEQVOFDUPX-UHFFFAOYSA-N di-(2-ethylhexyl)phosphoric acid Chemical compound CCCCC(CC)COP(O)(=O)OCC(CC)CCCC SEGLCEQVOFDUPX-UHFFFAOYSA-N 0.000 description 1
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- PNGLEYLFMHGIQO-UHFFFAOYSA-M sodium;3-(n-ethyl-3-methoxyanilino)-2-hydroxypropane-1-sulfonate;dihydrate Chemical compound O.O.[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC=CC(OC)=C1 PNGLEYLFMHGIQO-UHFFFAOYSA-M 0.000 description 1
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- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
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- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2079—Monocarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
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Abstract
一種洗淨液,其係為了洗淨具備金屬阻劑之支撐體所使用之洗淨液,並且含有溶劑與蟻酸。
Description
本發明關於一種洗淨液及具備金屬阻劑之支撐體的洗淨方法。
本發明是基於2019年4月11日在日本申請的特願2019-075724號來主張優先權,並將其內容援用於此。
半導體電路及裝置的加工,在各世代,極限尺寸都一直在持續縮小。隨著這樣的尺寸縮小,為了滿足處理逐漸微細的構造並且圖案化的需求,正需要新的材料及方法。
圖案形成一般而言,包含使用來形成轉印至後續加上的層或機能性材料的圖案之放射線敏感性材料(阻劑)薄層選擇性地曝光。有文獻提出一種適合於同時提供非常高的蝕刻對比,而且提供對EUV(極端紫外線)或EB(電子束)的良好吸收的金屬阻劑(例如參考專利文獻1)。
在使用這種金屬阻劑來圖案化的情況,藉由曝光,配位於金屬阻劑中的金屬過氧化物的配位子會分解,進行水解及縮合,可形成金屬氧化物,阻劑會變成不溶於顯像液。接下來,藉由使阻劑顯像,可形成蝕刻耐性高的圖案。
然而,在使用金屬阻劑來圖案化的情況,在將金屬阻劑塗佈於基板上時,會有金屬過氧化物的團簇結合於矽晶圓等的基板表面而產生殘渣的情形。
為了除去這種殘渣,有文獻提出一種使用含有有機溶劑及羧酸的洗淨液(例如參考專利文獻2)。
[先前技術文獻]
[專利文獻]
[專利文獻1] 美國專利第9176377號說明書
[專利文獻2] 國際公開第2018/031896號
[發明所欲解決的課題]
本發明人等檢討的結果發現,在使用含有有機溶劑及草酸等的固體酸的洗淨液來洗淨具備金屬阻劑之支撐體的情況,可發揮高金屬除去性能力,然而若乾燥,則固體酸會析出,因此會有污染程序裝置的可能性。
另一方面,本發明人等檢討的結果發現,為了抑制乾燥時的析出而使用醋酸等的液體酸來代替草酸等的固體酸的情況,與使用草酸等的固體酸的情況相比,金屬除去性能較為不足。
本發明是鑑於上述狀況而完成,課題為提供一種為了洗淨具備金屬阻劑之支撐體而使用的洗淨液,其提升了金屬除去性,且可抑制乾燥時的析出;及具備金屬阻劑之支撐體的洗淨方法。
[用於解決課題的手段]
為了解決上述課題,本發明採用了以下的構成。
本發明之第1態樣為一種洗淨液,其係為了洗淨具備金屬阻劑之支撐體所使用之洗淨液,並且含有溶劑與蟻酸。
本發明之第2態樣為一種具備金屬阻劑之支撐體的洗淨方法,其係具有:使用前述第1態樣所關連的洗淨液來洗淨具備金屬阻劑之支撐體之步驟。
[發明之效果]
依據本發明,可提供一種為了洗淨具備金屬阻劑之支撐體而使用之洗淨液,其提升了金屬除去性,且可抑制乾燥時的析出;及具備金屬阻劑之支撐體的洗淨方法。
(洗淨液)
本發明之第1態樣所關連的洗淨液含有溶劑與蟻酸。本態樣所關連的洗淨液是為了洗淨具備金屬阻劑之支撐體而使用。
<溶劑>
溶劑並未受到特別限定,可列舉水、有機溶劑等。
有機溶劑,可列舉丙二醇甲醚(PGME)、丙二醇甲基乙基醋酸酯(PGMEA)、丙二醇丁醚(PGBE)、乙二醇甲醚等的二醇醚及其酯;乙醇、丙醇、異丙醇、異丁醇、己醇、乙二醇、丙二醇等的醇;γ-丁內酯等的環狀酯;醋酸正丁酯、醋酸乙酯等的酯;2-庚酮等的酮;碳酸伸丙酯、碳酸伸丁酯等的液體環狀碳酸酯;環丁碸等的環狀碸等。
尤其溶劑以不具有羥基的有機溶劑為佳,二醇醚及其酯或酮為較佳,丙二醇甲醚(PGME)、丙二醇甲基乙基醋酸酯(PGMEA)或2-庚酮為更佳,丙二醇甲基乙基醋酸酯(PGMEA)為特佳。
藉由使用不具有羥基的有機溶劑作為溶劑,容易抑制洗淨液中的酸(蟻酸)的酯化反應,且容易提升洗淨液的經時安定性。
本實施形態中,溶劑可單獨使用一種,或以兩種以上的混合溶劑來使用。
在本實施形態所關連的洗淨液之中,溶劑的含量,相對於洗淨液的總質量,以40~90質量%為佳,45~85質量%為較佳,50~80質量%為更佳,55~70質量%為特佳。
<蟻酸>
蟻酸並未受到特別限定,可使用市售的產品。
在本實施形態所關連的洗淨液之中,蟻酸的含量,相對於洗淨液的總質量,以10~60質量%為佳,15~55質量%為較佳,20~50質量%為更佳,30~45質量%為特佳。
若蟻酸的含量在上述合適的範圍內,則容易提升洗淨液的金屬除去性。
<螯合劑>
本態樣所關連的洗淨液中,為了進一步提升金屬除去性,亦可含有螯合劑。
螯合劑,可列舉羧酸酯(carboxylate)、二羧酸酯、鹵化物、磷酸酯、膦酸酯(sulfate)、硫酸酯、磺酸酯等。
尤其從洗淨液的金屬除去性提升的觀點看來,螯合劑以二羧酸酯為佳,下述一般式(a-1)所表示的化合物或下述一般式(b-1)所表示的化合物(B)為較佳。
[式中,Rb1
及Rb2
各自獨立,為碳數1~3之烷基。Rb3
及Rb4
各自獨立,為氫原子或碳數1~3之烷基。Yb1
為單鍵、-O-、-S-或-N(Rb5
)-。Rb5
為氫原子或碳數1~3之烷基。Yb2
為-O-、-S-或-N(Rb6
)-。
Rb6
為氫原子或碳數1~3之烷基。n為0~3之整數。]
前述式(a-1)中,Ra1
及Ra2
之碳數1~3之烷基,可列舉甲基、乙基、丙基、異丙基等,以甲基為佳。
前述式(b-1)中,Rb1
~Rb6
之碳數1~3之烷基,可列舉甲基、乙基、丙基、異丙基等。
前述式(b-1)中,Rb1
及Rb2
以甲基或乙基為佳。
Rb3
及Rb4
以氫原子為佳。
Yb1
及Yb2
以-O-為佳。
n以1為佳。
在本實施形態所關連的洗淨液含有螯合劑的情況,螯合劑的含量,相對於洗淨液的總質量,以0.1~10質量%為佳,0.3~5質量%為較佳,0.5~2.5質量%為更佳,0.7~2質量%為特佳。
若螯合劑的含量在上述合適的範圍內,則更加容易藉由螯合效果來提升洗淨液的金屬除去性。
<其他成分>
本態樣所關連的洗淨液,在不損及本發明效果的範圍,除了上述成分之外,還可含有其他成分。
其他成分,可列舉蟻酸以外的有機酸、無機氟酸、四烷基銨化合物、界面活性劑等。
有機酸,可列舉醋酸、檸檬酸、草酸、2-硝基苯基醋酸、2-乙基己酸、十二酸等的羧酸;抗壞血酸、酒石酸、葡萄醣醛酸等的糖酸;苯磺酸、對甲苯磺酸等的磺酸;如雙(2-乙基己基)磷酸酯般的磷酸酯及磷酸等。
無機氟酸,可列舉六氟矽酸、六氟磷酸、氟硼酸等。
四烷基銨化合物,可列舉四甲基氟化銨、四丁基氟化銨、四丁基銨氟矽酸鹽等。
界面活性劑,可列舉聚環氧烷烷基苯醚系界面活性劑、聚環氧烷烷醚系界面活性劑、由聚環氧乙烷與聚環氧丙烷所形成的嵌段聚合物系界面活性劑、聚氧伸烷基二苯乙烯化苯醚系界面活性劑、聚伸烷基三苄基苯醚系界面活性劑、乙炔聚環氧烷系界面活性劑等。
各添加劑可單獨使用任一種,或可併用兩種以上。
在本實施形態所關連的洗淨液之中,添加劑的含量,相對於洗淨液的總質量,以0~10質量%為佳。
本實施形態所關連的洗淨液,20%水溶液的pH以2.0以下為佳,1.95以下為較佳,1.9以下為更佳。
若20%水溶液的pH在上述合適的範圍內,則更容易提升洗淨液的金屬除去性。
此外,關於上述pH,在本實施形態所關連的洗淨液實質上不含水的情況,只要以水稀釋製作出20%水溶液然後測定pH即可。
另外,在本實施形態所關連的洗淨液含有少量水的情況,只要添加相當量的水作稀釋,製作出20%水溶液來測定pH即可。
pH測定只要使用市售的pH計來進行即可。
<具備金屬阻劑之支撐體>
本實施形態所關連的洗淨液是為了洗淨具備金屬阻劑之支撐體而使用。
支撐體並未受到特別限定,可使用以往周知的支撐體,可列舉例如電子零件用的基板、或於該基板上形成了既定配線圖案的支撐體等。較具體而言,可列舉矽晶圓、銅、鉻、鐵、鋁等的金屬製基板、或玻璃基板等。
金屬阻劑並未受到特別限定,可列舉含有選自Sn、Hf、Zr、In、Te、Sb、Ni、Co、Ti、W、Ta及Mo所構成的群中的至少一種金屬的金屬阻劑。
較具體而言,可使用美國專利第9,176,377B2號說明書、美國專利申請公開第2013/0224652號說明書、美國專利第9,310,684號說明書、美國專利申請公開第2016/0116839號說明書、Jiang, Jing;Chakrabarty, Souvik;Yu, Mufei;et al., "Metal Oxide Nanoparticle Photoresists for EUV Patterning", Journal Of Photopolymer Science And Technology 27(5), 663-666 2014、A Platinum-Fullerene Complex for Patterning Metal Containing Nanostructures, D.X. Yang, A. Frommhold, D.S. He, Z.Y. Li, R.E. Palmer, M.A. Lebedeva, T.W. Chamberlain, A.N. Khlobystov, A.P.G. Robinson, Proc SPIE Advanced Lithography, 2014、美國專利申請公開第2009/0155546號說明書、美國專利申請公開第6,566,276號說明書等所記載的金屬阻劑及圖案化方法。
尤其支撐體以矽晶圓為佳,金屬阻劑以含有Sn為佳。
根據以上說明的本實施形態之洗淨液,含有蟻酸作為酸成分,因此金屬除去性提升,而且乾燥時的析出會受到抑制。
蟻酸在常溫下為液體,因此不會如草酸等的固體酸般在乾燥時析出。另外,蟻酸與醋酸相比pKa較低,因此可得到充分的金屬除去性。
因此,藉由使用本實施形態之洗淨液,可防止程序裝置的污染,同時可發揮良好的金屬除去性。
(具備金屬阻劑之支撐體的洗淨方法)
本發明之第2態樣是一種具備金屬阻劑之支撐體的洗淨方法,其係具有使用前述第1態樣所關連的洗淨液來洗淨具備金屬阻劑之支撐體的步驟(以下會有簡稱為「洗淨步驟」的情形)。
關於支撐體及金屬阻劑,與在前述第1態樣所關連的洗淨液中所說明的支撐體及金屬阻劑同樣。
本實施形態中,洗淨步驟並未受到特別限定,可列舉邊緣珠粒(edge bead)除去、背面清洗等、半導體製造程序中的周知洗淨方法。
在本實施形態之中,洗淨具備金屬阻劑之支撐體的步驟,以包含沿著支撐體的周緣部塗佈前述第1態樣所關連的洗淨液來除去前述支撐體上的邊緣珠粒(以下會有稱為「邊緣清洗」的情形)為佳。
邊緣清洗的方法只要是以往周知的程序,則並未受到特別限定,可列舉例如國際公開第2018/031896號所記載的方法等。
邊緣清洗的次數並未受到特別限定,可實施1~20次。此外,在邊緣清洗中可適用兩種以上的洗淨液。
在邊緣清洗的過程中,能夠以宜為0.05~50mL,較佳為0.075~40mL,更佳為0.1~25mL的量滴入洗淨液。
其他實施形態,是在邊緣清洗的過程中,能夠以宜為5mL/分鐘~50mL/分鐘的流速將洗淨液噴霧,宜為1秒~5分鐘,較佳為5秒~2分鐘。
為了評估邊緣清洗的金屬除去性,可對支撐體上的殘留金屬進行檢查。為了進行微量金屬的評估,市售的適當方法一般包含感應耦合電漿質譜分析法(ICP-MS)。為了進行支撐體表面的評估,可使用氣相分解-感應耦合電漿質譜分析法(VPD-ICP-MS)。使用此技術,可決定沿著緣部的晶圓表面每單位面積的殘留金屬。
在本實施形態之中,在金屬阻劑為Sn基底的阻劑的情況,殘留Sn的量以100×1010
原子/cm2
以下為佳,90×1010
原子/cm2
以下為較佳,80×1010
原子/cm2
以下為更佳。
根據以上說明的本實施形態所關連的具備金屬阻劑之支撐體的洗淨方法,是使用含有溶劑及蟻酸的洗淨液來進行具備金屬阻劑之支撐體的洗淨。該洗淨液的金屬除去性提升,且可抑制乾燥時的析出,因此可防止程序裝置的污染,同時可發揮良好的金屬除去性。
[實施例]
以下藉由實施例進一步詳細說明本發明,然而本發明不受這些例子限定。
<洗淨液的調製>
(實施例1~4、比較例1)
將表1所示的各成分混合,調製出各例之洗淨液。
[表1]
溶劑 | 酸 | 螯合劑 | pH (20%aq.) | 殘存Sn量 [×1010 原子/cm2 ] | |
比較例1 | PGMEA [90] | 醋酸 [10] | - | 2.48 | 340 |
實施例1 | PGMEA [60] | 蟻酸 [40] | - | 1.88 | 56 |
實施例2 | PGMEA [60] | 蟻酸 [40] | - | 1.66 | 102 |
實施例3 | PGMEA [59] | 蟻酸 [40] | (A)-1 [1] | 1.67 | 32 |
實施例4 | PGMEA [59] | 蟻酸 [40] | (B)-1 [1] | 1.67 | 78 |
表1中,各簡寫分別具有以下的意思。[]內的數值為摻合量(質量%)。另外,pH是將各例之洗淨液以水稀釋,製作出20%水溶液後所測得之值。
PGMEA:丙二醇甲基乙基醋酸酯
(A)-1:乙醯基丙酮
(B)-1:丙二酸二甲酯
<Sn除去性的評估>
在6英吋Si晶圓上塗佈有機金屬錫氧氫氧化物阻劑(Inpria製)1.5mL,藉由旋轉塗佈形成Sn阻劑膜。
接下來,將各例之洗淨液5mL塗佈於形成了Sn阻劑膜的Si晶圓上,並以1500rpm使晶圓旋轉45秒鐘至乾燥。重覆此洗淨操作5次之後,塗佈丙二醇甲醚(PGME)與丙二醇甲基乙基醋酸酯(PGMEA)的質量比各50%的混合溶液5mL,並以1500rpm使晶圓旋轉45秒鐘至乾燥。
接下來,使用氣相分解-感應耦合電漿-質譜分析(VPD-ICP-MS),由ChemTrace(註冊商標)測定殘存Sn量(×1010
原子/cm2
)。將結果揭示於表1。
由表1所示的結果,確認了實施例1~4的洗淨液,與比較例1的洗淨液相比,殘存Sn量較少,金屬除去性較良好。
以上說明了本發明的合適的實施例,然而本發明不受這些實施例限定。在不脫離本發明旨趣的範圍,可進行構成的附加、省略、取代及其他變更。本發明不受前述說明限定,只受附加的申請專利範圍限定。
Claims (5)
- 一種洗淨液,其係為了洗淨具備金屬阻劑之支撐體所使用之洗淨液,並且含有溶劑與蟻酸。
- 如請求項1之洗淨液,其中前述溶劑為不具有羥基的有機溶劑。
- 如請求項1之洗淨液,其中前述蟻酸的含量,相對於洗淨液的總質量為10~60質量%。
- 一種具備金屬阻劑之支撐體的洗淨方法,其係具有:使用如請求項1之洗淨液來洗淨具備金屬阻劑之支撐體之步驟。
- 如請求項4之具備金屬阻劑之支撐體的洗淨方法,其中包含:沿著前述支撐體的周緣部塗佈如請求項1之洗淨液以除去前述支撐體上的邊緣珠粒(edge bead)。
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