TW202109642A - 載板之除去方法 - Google Patents

載板之除去方法 Download PDF

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TW202109642A
TW202109642A TW109128885A TW109128885A TW202109642A TW 202109642 A TW202109642 A TW 202109642A TW 109128885 A TW109128885 A TW 109128885A TW 109128885 A TW109128885 A TW 109128885A TW 202109642 A TW202109642 A TW 202109642A
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鈴木克彥
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日商迪思科股份有限公司
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Abstract

本發明係一種載板之除去方法,其課題為可容易自工作件除去載板的載板之除去方法。 解決手段為在自經由設置於載板表面的全體之暫時接著層而接著於除了載板的表面之外緣部的範圍之工作件,除去載板時所使用之載板之除去方法,其中包含:除去暫時接著層之外緣部的一部分或全部之暫時接著層除去工程,和在除去暫時接著層之外緣部的一部分或全部之後,自上方由保持單元而保持該工作件之保持工程,和在自上方保持工作件之狀態,經由自載板之表面側,由推壓構件加上朝下的力量於載板之外緣部而使載板移動至自工作件遠離之方向之時,而自工作件除去載板之載板除去工程。

Description

載板之除去方法
本發明係有關自經由暫時接著層而接著於載板表面之工作件,除去載板時所使用之載板之除去方法。
在由攜帶電話機或個人電腦所代表之電子機器中,具備電子電路等之裝置的裝置晶片則成為必須之構成要素。裝置晶片係例如,經由矽等之半導體材料所成之晶圓表面,以分割預定線(切割道)而劃分成複數的範圍,於各範圍形成裝置之後,經由沿著此分割預定線而分割晶圓所得到。
由如上述之方法所得到之裝置晶片係例如,固定於、CSP(Chip Size Package)用之母基板,在由打線接合等之方法而電性連接於此母基板之端子等之後,由塑模樹脂所封閉。如此,由經由塑模樹脂而封閉裝置晶片形成封裝裝置者,成為呈可自衝擊,光,熱,水等之外來因素保護裝置晶片。
在近年,開始採用使用晶圓級之再配線技術而於裝置晶片的範圍外,形成封裝端子之稱為FOWLP (Fan-Out Wafer Level Package)的封裝技術(例如,參照專利文獻1)。另外,亦提案有:以較晶圓尺寸為大之面板(對於代表性係使用於液晶面板的製造之玻璃基板)之等級,總括製造封裝裝置之稱為FOPLP(Fan-Out Panel Level Packaging)的封裝技術。
在FOPLP中,例如,於呈為暫時的基板之載板表面,藉由暫時接著層而形成配線層(RDL:Redistribution Layer),再於此配線層接合裝置晶片。接著,以塑模樹脂而封閉裝置晶片,得到封裝面板。之後,經由研削等之方法而薄化封裝面板之後,經由分割此封裝面板之時,完成封裝裝置。 [先前技術文獻] [專利文獻]
[專利文獻1] 日本特開2016-201519號公報
[發明欲解決之課題]
在上述之FOPLP中,例如,在將封裝面板分割為封裝裝置之後,自此封裝裝置除去載板。具體而言係自載板拾取各封裝裝置。但當封裝裝置之尺寸為小時,自載板拾取此封裝裝置則為困難。
另一方面,亦考慮在將封裝面板分割為封裝裝置之前,自封裝面板剝離載板而除去者。但暫時接著層之接著力係因有某種度強度之故,不使封裝面板或載板產生損傷而自封裝面板剝離載板則為困難。
本發明係有鑑於如此之問題點所作為之構成,其目的係提供:可容易自封裝面板等之工作件除去載板的載板之除去方法。 為了解決課題之手段
如根據本發明之一形態,提供:在自經由設置於載板表面的全體之暫時接著層而接著於除了該載板的該表面之外緣部的範圍之工作件,除去該載板時所使用之載板之除去方法,其中包含:除去該暫時接著層之外緣部的一部分或全部之暫時接著層除去工程,和在除去該暫時接著層之該外緣部的一部分或全部之後,自上方由保持單元而保持該工作件之保持工程,和在自上方保持該工作件之狀態,經由自該載板之該表面側,由推壓構件加上朝下的力量於該載板之該外緣部而使該載板移動至自該工作件遠離之方向之時,而自該工作件除去該載板之載板除去工程的載板之除去方法。
在本發明之一形態中,在該載板除去工程中,有著在噴上流體於該工作件與該載板之間之後,或噴上流體於該工作件與該載板之間之同時,加上朝下的力量於該載板之該外緣部而自該工作件除去該載板之情況。
另外,在本發明之一形態中,在該載板除去工程中,在將該工作件與該載板沉入於液體之狀態,加上朝下的力量於該載板之該外緣部亦可。另外,對於該液體係含有界面活性劑亦可。
另外,在本發明之一形態中,在該載板除去工程中,在將該工作件與該載板沉入於液體之狀態,賦予振動於該推壓構件之同時,加上朝下的力量於該載板之該外緣部亦可。
另外,在本發明之一形態中,在該載板除去工程中,在將該工作件與該載板沉入於液體之狀態,賦予振動於該液體之同時,加上朝下的力量於該載板之該外緣部亦可。 發明效果
在有關本發明之一形態之載板之除去方法中,由除去暫時接著層之外緣部的至少一部分者,自接著載板與工作件之暫時接著層的中央部,切開緊貼於暫時接著層之外緣部的載板之部分。
因而,由自上方由保持單元而保持工作件,加上朝下的力量於載板之外緣部者,可未受到經由緊貼於外緣部之載板的部份之影響而自工作件容易除去載板。另外,因與加上於載板之外緣部的朝下之力量同時,可利用作用於載板之重力之故,在自工作件除去載板時,無須大的力量。
參照附加圖面,對於有關本發明之一形態之實施形態進行說明。圖1(A)係顯示在有關本實施形態之載板之除去方法所使用之複合基板1之構成例之剖面圖,而圖1(B)係擴大圖1(A)之一部分而顯示之剖面圖。複合基板1係例如,包含鈉玻璃,硼矽酸鹽玻璃,石英玻璃等之絕緣體材料所形成之載板3。
此載板3係具有:大致平坦之第1面(表面)3a,和與第1面3a相反側之第2面(背面)3b:自第1面3a側或第2面3b側所視之形狀則構成為矩形之平板狀。載板3之厚度係例如2mm以下、代表性為1.1mm。
然而,在本實施形態中,使用鈉玻璃,硼矽酸鹽玻璃,石英玻璃等之絕緣體材料所形成之載板3,但對於載板3之材質,形狀,構造,尺寸等未特別限制。例如,亦可將半導體,陶瓷,樹脂,金屬等之材料所成的板,作為載板3而使用亦可。亦可將半導體晶圓等之圓盤狀的板作為載板3。
對於載板3之第1面3a係藉由暫時接著層5而接著工作件7。暫時接著層5係例如,經由重疊金屬膜或絕緣體膜等而設置於第1面3a之大致全體。然而,此暫時接著層5係亦有經由作為接著劑而發揮機能之樹脂膜等而構成之情況。
暫時接著層5之厚度係例如,20μm以下、代表性而言為5μm。此暫時接著層5係包含:接著載板3與工作件7之中央部5a,和被覆載板3之第1面3a的外緣部等之外緣部5b。也就是,工作件7係接著於除了載板3之第1面3a的外緣部之範圍。然而,此外緣部5b之一部分係緊貼於載板3而不容易剝離。
對於自工作件7剝離除去載板3時,暫時接著層5之中央部5a則分離成密著於載板3側之第1部分5c(參照圖3(C)),和密著於工作件7側之第2部分5d(參照圖3(C))。對於自工作件7剝離載板3之前,呈適當分離此中央部5a,而自中央部5a切開緊貼於載板3之外緣部5b的一部分。
工作件7係例如,包含:亦稱為封裝面板或封裝晶圓等,接合於暫時接著層5之中央部5a的配線層(RDL)(未圖示),和接合於配線層之複數的裝置晶片9,和封閉各裝置晶片9之塑模樹脂層11。此工作件7係例如,構成為與載板3同樣的平板狀。
另外,自第1面(表面)7a側(與暫時接著層5相反側)而視此工作件7的尺寸係成為較自第1面3a側或第2面3b側而視載板3之尺寸為小。並且,工作件7之厚度係例如,1.5mm以下、代表性而言為0.6mm。
然而,工作件7之第1面7a側係由研削等之方法而加工亦可。另外,對於鄰接在工作件7內之裝置晶片9之間的範圍,係設定有分割預定線。例如,由沿著任意的分割預定線而切斷工作件7者,工作件7係各分割成包含1或複數之裝置晶片9的複數之工作片。
並且,如沿著所有的分割預定線而切斷工作件7(或工作片),可得到對應於各裝置晶片9之複數的封裝裝置。然而,對於工作件7之材質,形狀,構造,尺寸等未有特別限制。例如,工作件7係亦有主要由配線層而構成,而未包含裝置晶片9或塑模樹脂層11等之情況。
在有關本實施形態之載板之除去方法中,首先,除去暫時接著層5之外緣部5b之至少一部分(暫時接著層除去工程)。圖2(A)係顯示除去暫時接著層5之外緣部5b之一部分之樣子的剖面圖,而圖2(B)係顯示除去暫時接著層5之外緣部5b的一部分之狀態的剖面圖。
對於在除去外緣部5b的一部分時,係使用圖2(A)所示之雷射加工裝置2。雷射加工裝置2係具備為了保持複合基板1之夾盤4。夾盤4係例如,包含由不鏽鋼所代表之金屬材料所成之圓筒狀的框體6,和以多孔質材料而成,配置於框體6之上部的保持板8。
保持板8之上面係成為了吸引,保持複合基板1之載板3的保持面8a。此保持板8之下面側係藉由設置於框體6內部之流路6a或閥10等而連接於吸引源12。因此,如開啟閥10時,可使吸引源12之負壓作用於保持面8a。
夾盤4(框體6)係連結於馬達等之旋轉驅動源(未圖示),經由此旋轉驅動源所產生的力,對於上述之保持面8a而言大致旋轉於垂直之旋轉軸周圍。另外,夾盤4(框體6)係經由移動機構(未圖示)所支持,而移動於對於上述之保持面8a而言大致平行之加工傳送方向,和對於保持面8a而言大致平行,對於加工傳送方向大致垂直之推斷傳送方向。
如圖2(A)所示,對於夾盤4之上方係配置有雷射照射單元14。雷射照射單元14係包含:可生成由暫時接著層5所吸收之波長的雷射光束16之雷射振盪器(未圖示),和將此雷射光束16引導至經由夾盤4所保持之複合基板1之光學系統(未圖示)。
對於在除去外緣部5b之一部分時,首先,經由夾盤4而保持複合基板1之載板3,使工作件7側露出於上方。即,如圖2(A)所示,在使載板3之第2面3b接觸於夾盤4之保持面8a之後,開啟閥10而使吸引源12之負壓作用於保持面8a。
對於在經由夾盤4而保持複合基板1之後,照射雷射光束16於露出於上方之暫時接著層5之外緣部5b,如圖2(B)所示,除去此外緣部5b之一部分5e。具體而言,自雷射照射單元14之雷射光束射出口照射雷射光束16至下方同時,使此雷射照射單元14之雷射光束射出口沿著暫時接著層5之外緣部5b之一部分5e相對移動。
然而,成為除去對象之外緣部5b之一部分5e係例如,呈圍繞暫時接著層5之中央部5a,而設定為自此暫時接著層5(或載板3)之外緣1mm~3mm的距離之位置。即,圍繞中央部5a之環狀的範圍則作為除去的對象而設定。但對於此外緣部5b之一部分5e之位置未特別限制。另外,照射雷射光束16之條件係在可經由燒蝕而除去外緣部5b之一部分5e的範圍內進行調整。
經由此,如圖2(A)所示,可自上方照射雷射光束16於外緣部5b之一部分5e而除去此外緣部5b之一部分5e。也就是,自中央部5a切開緊貼於載板3之外緣部5b之一部分,而成為呈可自工作件7容易剝離載板3。然而,在本實施形態中,僅除去外緣部5b之一部分5e,但除去外緣部5b之全部亦可。
對於在除去暫時接著層5之外緣部5b之一部分5e之後,係自上方保持複合基板1之工作件7(保持工程)。圖3(A)係自上方保持工作件7之樣子的剖面圖。對於在自上方保持工作件7時,係使用圖3(A)等之剝離裝置22。剝離裝置22係具備為了自上方保持複合基板1之工作件7的保持單元24。
對於保持單元24之下部係形成有具有與工作件7之第1面7a同程度尺寸之保持面24a。對於此保持面24a係藉由流路(未圖示)或閥(未圖示)等而連接吸引源(未圖示)。因此,如開啟閥時,吸引源的負壓則作用於保持面24a。另外,保持單元24係經由升降機構(未圖示)而支持著,移動於垂直方向。
對於在自上方保持工作件7時,如圖3(A)所示,例如,在安置工作件7於載板3之上方的狀態,使保持單元24之保持面24a接觸於此工作件7之第1面7a。並且,開啟閥而使吸引源的負壓作用於保持面24a。經由此,自上方經由保持單元24而保持複合基板1之工作件7。
然而,在本實施形態中,對於保持單元24之保持面24a而言直接使工作件7之第1面7a接觸,但使多孔質薄片等介入存在於工作件7之第1面7a與保持單元24之保持面24a之間亦可。經由此,成為呈可防止因與保持面24a之接觸引起之工作件7的損傷或污染等。
對於在自上方保持工作件7之後,係由加上朝下的力量於載板3之外緣部者,可自工作件7剝離除去載板3(載板除去工程)。圖3(B)係顯示加上朝下的力量於載板3之外緣部的樣子之剖面圖,圖3(C)係顯示自工作件7除去載板3之狀態的剖面圖。對於在自工作件7剝離除去載板3時,係使用持續剝離裝置22。
如圖3(B)所示,對於保持單元24之側方,係於相當於經由此保持單元24所保持之複合基板1的載板3之外緣部的位置,配置有棒狀的推壓構件26。推壓構件26係例如,經由與移動保持單元24之升降機構另外的升降機構(未圖示)所支持,而自保持單元24獨立移動於垂直方向。
對於在自工作件7除去載板3時,首先,同時使保持單元24與推壓構件26移動至上方,抬起保持於保持單元24之複合基板1。即,使載板3之第2面3b側露出於下方。接著,保持保持單元24之位置的狀態,使推壓構件26移動至下方,再使此推壓構件26之下端接觸於載板3之外緣部。即,經由推壓構件26而加上朝下的力量至載板3之外緣部。
如上述,複合基板1之工作件7係自上方經由保持單元24而保持。因此,當由推壓構件26而加上朝下的力量於載板3之外緣部時,載板3係將暫時接著層5,於邊緣自工作件7剝離而掉落。即,載板3係移動於自工作件7遠離的方向。在本實施形態中,因自中央部5a切開緊貼於載板3之外緣部5b之一部分之故,可自工作件7容易剝離載板3。
如以上,在有關本實施形態之載板之除去方法中,由照射吸收於暫時接著層5之波長的雷射光束16於暫時接著層5而除去暫時接著層5之外緣部5b之至少一部分5e者,自接著載板3與工作件7之暫時接著層5的中央部5a,切開緊貼於暫時接著層5之外緣部5b的載板3之部分。
因而,由自上方由保持單元24而保持工作件7,加上朝下的力量於載板3之外緣部者,可未受到經由緊貼於外緣部5b之載板3的部份之影響而自工作件7容易除去載板3。另外,因與加上於載板3之外緣部的朝下之力量同時,可利用作用於載板3之重力之故,在自工作件7除去載板3時,無須大的力量。
然而,本發明係未限定於上述實施形態之記載,而可作種種變更而實施。例如,在上述之實施形態中,以自上方的工作件7側照射雷射光束16之方法而除去外緣部5b之至少一部分5e,但以自下方的載板3側照射雷射光束之方法,亦可除去外緣部5b之至少一部分5e。然而,對於此情況,使用透過載板3而由暫時接著層5所吸收之波長的雷射光束。
同樣在上述之實施形態中,以照射雷射光束16至暫時接著層5之方法而除去暫時接著層5之外緣部5b的至少一部分5e,但以其他的方法而除去外緣部5b之至少一部分5e亦可。例如,可以切削刀片等切入於暫時接著層5之方法,除去外緣部5b的至少一部分5e。
另外,例如,上述之實施形態之推壓構件26係呈自保持單元24可獨立移動於垂直方向所構成,但此推壓構件26係如至少對於保持單元24而言可相對移動即可。
因此,例如,由將推壓構件26固定於剝離裝置22之框體(未圖示)等,僅使保持單元24移動者,對於保持單元24而言,可使推壓構件26相對移動即可。另外,在上述之實施形態中,使用1個之推壓構件26,但亦可使用複數之推壓構件26。
另外,在自工作件7剝離載板3而除去時,亦可噴上流體於在載板3與工作件7之間而露出之暫時接著層5。圖4(A)顯示由有關第1變形例之載板之除去方法,自工作件7除去載板3之樣子的剖面圖。然而,有關第1變形例之載板的除去方法之許多部分係與有關上述之實施形態之載板的除去方法共通。因而,在以下中,主要對於不同點進行說明,省略共通部分之詳細的說明。
如圖4(A)所示,對於在此第1變形例所使用之剝離裝置22之保持單元24的側方,係配置有噴嘴32。對於噴嘴32係藉由流路(未圖示)或閥(未圖示)等而連接流體34之供給源(未圖示)。
由在自此噴嘴32,噴上流體34於在載板3與工作件7之間而露出之暫時接著層5之後,或噴上流體34於在載板3與工作件7之間而露出之暫時接著層5之同時,以推壓構件26加上朝下的力量於載板3之外緣部者,可更容易自工作件7剝離載板3。作為噴上於載板3與工作件7之間的流體34係例如,可使用空氣或水等。但流體34之種類等未特別限制。
另外,在自工作件7剝離除去載板3時,將載板3與工作件7沉入於液體亦可。圖4(B)顯示由有關第2變形例之載板之除去方法,自工作件7除去載板3之樣子的剖面圖。然而,有關第2變形例之載板的除去方法之許多部分係與有關上述之實施形態之載板的除去方法共通。因而,在以下中,主要對於不同點進行說明,省略共通部分之詳細的說明。
如圖4(B)所示,對於在此第2變形例所使用之剝離裝置22之保持單元24的下方,係配置有可收容載板3與工作件7之尺寸的槽42。對於槽42內係儲存有水等之液體44。
在將載板3與工作件7沉入於槽42內的液體44之狀態,以推壓構件26加上朝下的力量於載板3之外緣部,自工作件7剝離載板3時,自工作件7所剝離之載板3係掉落在液體44中。其結果,比較於在空氣中使載板3掉落之情況,伴隨於掉落的衝擊則變小,而可防止載板3之破損,或剝離裝置22之振動等。
然而,對於液體44係含有界面活性劑亦可。作為含於液體44之界面活性劑係可使用容易侵入於暫時接著層5之陰離子界面活性劑或陽離子界面活性劑等。如此,由含有容易侵入於暫時接著層5之界面活性劑於液體44者,成為可自界面活性劑所侵入之範圍,容易分離暫時接著層5,而更容易自工作件7除去載板3。
另外,在第2變形例中,將載板3與工作件7沉入於液體44之後,以推壓構件26加上朝下的力量於載板3之外緣部時,亦可賦予超音波等之振動於此推壓構件26。具體而言,賦予超音波等之振動於推壓構件26之同時,以推壓構件26加上朝下的力量於載板3之外緣部。對於此情況,經由自推壓構件26所傳導之振動的作用,成為呈可更容易自工作件7剝離載板3。
同樣,將載板3與工作件7沉入於液體44之後,以推壓構件26加上朝下的力量於載板3之外緣部時,亦可賦予超音波等之振動於液體44。具體而言,賦予超音波等之振動於液體44之同時,以推壓構件26加上朝下的力量於載板3之外緣部。對於此情況,經由自液體44所傳導之振動的作用,成為呈可更容易自工作件7剝離載板3。
另外,對於第2變形例而言,更加組合第1變形例亦可。即,在將載板3與工作件7沉入於液體44之前,或在沉入之後,亦可噴上流體於在載板3與工作件7之間而露出之暫時接著層5者。對於此情況,亦可更容易自工作件7剝離載板3。
其他,有關上述實施形態之構造,方法等係只要在不脫離本發明之目的範圍中,可作適宜變更而實施。
1:複合基板 3:載板 3a:第1面(表面) 3b:第2面(背面) 5:暫時接著層 5a:中央部 5b:外緣部 5c:第1部分 5d:第2部分 5e:一部分 7:工作件 7a:第1面(表面) 9:裝置晶片 11:塑模樹脂層 2:雷射加工裝置 4:夾盤 6:框體 6a:流路 8:保持板 8a:保持面 10:閥 12:吸引源 14:雷射照射單元 16:雷射光束 22:剝離裝置 24:保持單元 24a:保持面 26:推壓構件 32:噴嘴 34:流體 42:槽 44:液體
[圖1(A)]係顯示包含載板與工作件之複合基板的構成例之剖面圖,而[圖1(B)]係擴大圖1(A)之一部分而顯示之剖面圖。 [圖2(A)]係顯示除去暫時接著層之外緣部之一部分之樣子的剖面圖,而[圖2(B)]係顯示除去暫時接著層之外緣部的一部分之狀態的剖面圖。 [圖3(A)]係顯示自上方保持工作件的樣子之剖面圖,而[圖3(B)]係顯示加上朝下的力量於載板之外緣部的樣子之剖面圖,[圖3(C)]係顯示自工作件除去載板之狀態的剖面圖。 [圖4(A)]顯示由有關第1變形例之載板之除去方法,自工作件除去載板之樣子的剖面圖,而[圖4(B)]係顯示由有關第2變形例之載板之除去方法而自工作件除去載板的樣子之剖面圖。
1:複合基板
2:雷射加工裝置
3:載板
3a:第1面(表面)
3b:第2面(背面)
4:夾盤
5:暫時接著層
5a:中央部
5b:外緣部
5e:一部分
6:框體
6a:流路
7:工作件
7a:第1面(表面)
8:保持板
8a:保持面
9:裝置晶片
10:閥
11:塑模樹脂層
12:吸引源
14:雷射照射單元
16:雷射光束

Claims (8)

  1. 一種載板之除去方法,係在自經由設置於載板表面的全體之暫時接著層而接著於除了該載板的該表面之外緣部的範圍之工作件,除去該載板時所使用之載板之除去方法,其中包含: 除去該暫時接著層之外緣部的一部分或全部之暫時接著層除去工程, 和在除去該暫時接著層之該外緣部的一部分或全部之後,自上方由保持單元而保持該工作件之保持工程, 和在自上方保持該工作件之狀態,經由自該載板之該表面側,由推壓構件加上朝下的力量於該載板之該外緣部而使該載板移動至自該工作件遠離之方向之時,而自該工作件除去該載板之載板除去工程。
  2. 如請求項1之載板之除去方法,其中在該載板除去工程中,在噴上流體於該工作件與該載板之間之後,或噴上流體於該工作件與該載板之間之同時,加上朝下的力量於該載板之該外緣部而自該工作件除去該載板。
  3. 如請求項1之載板之除去方法,其中在該載板除去工程中,在將該工作件與該載板沉入於液體之狀態,加上朝下的力量於該載板之該外緣部。
  4. 如請求項3之載板之除去方法,其中對於該液體係含有界面活性劑。
  5. 如請求項2之載板之除去方法,其中在該載板除去工程中,在將該工作件與該載板沉入於液體之狀態,加上朝下的力量於該載板之該外緣部。
  6. 如請求項5之載板之除去方法,其中對於該液體係含有界面活性劑。
  7. 如請求項3至請求項6之任一項之載板之除去方法,其中在該載板除去工程中,在將該工作件與該載板沉入於該液體之狀態,賦予振動於該推壓構件之同時,加上朝下的力量於該載板之該外緣部。
  8. 如請求項3至請求項6之任一項之載板之除去方法,其中在該載板除去工程中,在將該工作件與該載板沉入於該液體之狀態,賦予振動於該液體之同時,加上朝下的力量於該載板之該外緣部。
TW109128885A 2019-08-26 2020-08-25 載板之除去方法 TWI845750B (zh)

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