TW202102575A - Laminate for high-frequency circuit, method for producing same, flexible printed board, b stage sheet, and wound laminate - Google Patents

Laminate for high-frequency circuit, method for producing same, flexible printed board, b stage sheet, and wound laminate Download PDF

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TW202102575A
TW202102575A TW109106333A TW109106333A TW202102575A TW 202102575 A TW202102575 A TW 202102575A TW 109106333 A TW109106333 A TW 109106333A TW 109106333 A TW109106333 A TW 109106333A TW 202102575 A TW202102575 A TW 202102575A
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resin layer
laminate
layer
film
frequency circuits
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TWI822966B (en
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西村功
奥田隆一
藤冨晋太郎
多田羅了嗣
宮木伸行
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日商Jsr股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • B32B7/025Electric or magnetic properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/38Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
    • C08G65/40Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

Provided is a laminate for high-frequency circuit with which it is possible to reduce the transmission loss of an electrical signal in a high-frequency circuit, and to produce a circuit board with outstanding smoothing properties. The laminate for high-frequency circuits according to this invention is obtained by laminating a film layer having a glass transition temperature of at least 150 DEG C, and a resin layer, in contact with one another. The resin layer contains a polymer having at least one type of repeating unit selected from among repeating units represented by general formulas (1-1), (1-2) and (1-3). The modulus of elasticity of the resin layer falls within the range of 0.1-3.0 GPa, and at a temperature of 23 DEG C, the dielectric loss tangent of the resin layer at a frequency of 10 GHz falls within the range of 0.001-0.01 and the relative dielectric constant falls within the range of 2.0-3.0.

Description

高頻電路用積層體及其製造方法、柔性印刷基板、B階片、以及積層體捲繞體Laminated body for high frequency circuit and manufacturing method thereof, flexible printed circuit board, B-stage sheet, and laminated body wound body

本發明是有關於一種將樹脂層與膜層貼合而成的高頻電路用積層體及其製造方法、柔性印刷基板以及B階片。另外,本發明是有關於一種可較佳地用作高頻電路基板的積層體捲繞體。The present invention relates to a laminate for high-frequency circuits formed by bonding a resin layer and a film layer, a method for manufacturing the same, a flexible printed circuit board, and a B-stage sheet. In addition, the present invention relates to a laminated body wound body that can be preferably used as a high-frequency circuit board.

隨著近年來的資訊終端機設備的高性能化或網路技術的飛躍性進步,資訊通訊領域中處理的電訊號的面向高速、大容量傳輸的高頻化不斷發展。為了應對於此,於所使用的印刷配線板亦傳輸高頻訊號或高速數位訊號並進行處理,而且提高對可減少成為課題的傳輸損失的低介電常數(低εr )及低介電損耗正切(低tanδ)材料的要求(例如,參照專利文獻1~專利文獻4)。With the high performance of information terminal equipment or the rapid progress of network technology in recent years, the high frequency of the telecommunication signals processed in the information communication field for high-speed and large-capacity transmission has been continuously developed. In order to cope with this, the printed wiring board used also transmits high-frequency signals or high-speed digital signals and processes them, and improves the low dielectric constant (low ε r ) and low dielectric loss that can reduce the problematic transmission loss. Tangent (low tanδ) material requirements (for example, refer to Patent Document 1 to Patent Document 4).

作為印刷配線板,於電子及電氣設備中使用柔性印刷基板(以下,亦稱為「FPC(flexible printed circuit)」)或柔性扁平線纜(以下,亦稱為「FFC(flexible flat cable)」)。FPC是經過如下步驟來製造:對包含絕緣體層與銅箔層的覆銅積層體(copper-clad laminate,CCL)進行加工並形成電氣電路後,為了保護該電路部,將包含絕緣層與接著劑層的蓋層(coverlay,CL)的接著劑部安裝於電路部。另外,FFC是使用包含絕緣體層與接著劑層的基材與以配線狀形成的銅箔等導體,於基材的接著劑部彼此之間排列多根導體並進行接著而獲得的電氣電路。 [現有技術文獻] [專利文獻]As a printed wiring board, a flexible printed circuit board (hereinafter, also referred to as "FPC (flexible printed circuit)") or a flexible flat cable (hereinafter, also referred to as "FFC (flexible flat cable)") is used in electronic and electrical equipment . FPC is manufactured through the following steps: After processing a copper-clad laminate (CCL) containing an insulator layer and a copper foil layer and forming an electrical circuit, in order to protect the circuit part, it will contain an insulating layer and an adhesive The adhesive part of the coverlay (CL) of the layer is mounted on the circuit part. In addition, FFC is an electric circuit obtained by arranging a plurality of conductors between the adhesive portions of the base material and bonding them using a substrate including an insulator layer and an adhesive layer, and conductors such as copper foil formed in a wiring shape. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2014-197611號公報 [專利文獻2]日本專利特開2015-176921號公報 [專利文獻3]日本專利特開2016-087799號公報 [專利文獻4]日本專利特開2016-032098號公報[Patent Document 1] Japanese Patent Laid-Open No. 2014-197611 [Patent Document 2] Japanese Patent Laid-Open No. 2015-176921 [Patent Document 3] Japanese Patent Laid-Open No. 2016-087799 [Patent Document 4] Japanese Patent Laid-Open No. 2016-032098

[發明所欲解決之課題] 然而,電訊號越為高頻越容易衰減,而存在傳輸損失變大的傾向。因此,於下一代高頻(10 GHz以上)應對安裝基板中,用以減少配線間串擾的低介電或用以抑制電訊號的傳輸損失的低介電損失特性對絕緣體材料而言成為必要的不可或缺的特性。另外,為了抑制電訊號的傳輸損失,亦重要的是安裝基板的平滑性優異。認為特別是於FPC或FFC中,為了使樹脂層與膜層積層而使用接著劑,但由接著劑形成的接著層為損及安裝基板的低介電損失特性或平滑性的一因素。[The problem to be solved by the invention] However, the higher the high frequency of the electrical signal, the easier it is to attenuate, and the transmission loss tends to increase. Therefore, in the next generation of high frequency (above 10 GHz) compliant mounting substrates, low dielectric loss characteristics to reduce crosstalk between wiring and low dielectric loss characteristics to suppress transmission loss of electrical signals are necessary for insulator materials. Indispensable features. In addition, in order to suppress the transmission loss of electric signals, it is also important that the smoothness of the mounting substrate is excellent. It is considered that in FPC or FFC, an adhesive is used in order to laminate the resin layer and the film, but the adhesive layer formed of the adhesive is a factor that impairs the low dielectric loss characteristics and smoothness of the mounting substrate.

進而,於介隔存在有接著劑的樹脂層與膜層的積層體作為捲繞於卷芯的捲繞體來加以保管的情況下,接著層因外部因素(例如保管環境)而發生變質並進行硬化,因此存在於拉出時容易產生捲曲皺痕的課題。Furthermore, when the laminate of the resin layer and the film layer with the adhesive interposed therebetween is stored as a wound body wound around the core, the adhesive layer undergoes deterioration due to external factors (such as storage environment). It is hardened, so there is a problem that curls and wrinkles are likely to occur when pulled out.

本發明是鑑於所述實際情況而成者,其課題在於提供一種可製造減少高頻電路中的電訊號的傳輸損失、且平滑性優異的電路基板的高頻電路用積層體。另外,本發明的課題在於提供一種可藉由低溫下的貼合來製造、且樹脂層與膜層間的接著性優異的高頻電路用積層體的製造方法。The present invention was made in view of the above-mentioned actual situation, and its subject is to provide a laminate for high-frequency circuits that can manufacture a circuit board that reduces transmission loss of electric signals in a high-frequency circuit and has excellent smoothness. Moreover, the subject of this invention is providing the manufacturing method of the laminated body for high frequency circuits which can be manufactured by bonding at low temperature, and is excellent in the adhesiveness between a resin layer and a film layer.

進而,本發明的課題在於提供一種即便於將可減少高頻訊號的傳輸損失的高頻電路用積層體捲繞於卷芯來加以保管的情況下,亦可有效地抑制捲曲皺痕的積層體捲繞體。Furthermore, the subject of the present invention is to provide a laminate that can effectively suppress curling wrinkles even when a laminate for high-frequency circuits that can reduce transmission loss of high-frequency signals is wound around a core for storage. Rolled body.

[解決課題之手段] 本發明是為了解決所述課題的至少一部分而成者,可作為以下任一種態樣來實現。[Means to solve the problem] The present invention is made to solve at least a part of the above-mentioned problems, and can be implemented as any of the following aspects.

本發明的高頻電路用積層體的一態樣中, 玻璃轉移溫度為150℃以上的膜層與樹脂層相接並積層, 所述樹脂層含有具有由下述通式(1-1)、通式(1-2)及通式(1-3)所表示的重複單元中的至少一種重複單元的聚合物,所述樹脂層的彈性係數為0.1 GPa~3.0 GPa,於23℃下所述樹脂層的頻率10 GHz下的介電損耗正切為0.001~0.01,且相對介電常數為2.0~3.0。 [化1]

Figure 02_image001
[所述通式(1-1)~通式(1-3)中,R1 分別獨立地為鹵素原子、碳數1~20的一價烴基、碳數1~20的一價鹵化烴基、硝基、氰基、一級胺基~三級胺基、或一級胺基~三級胺基的鹽。n分別獨立地為0~2的整數。於n為2的情況下,多個R1 可相同亦可不同,且可以任意的組合鍵結而形成環結構的一部分。]In one aspect of the laminate for high-frequency circuits of the present invention, a film layer having a glass transition temperature of 150° C. or higher and a resin layer are laminated in contact with each other, and the resin layer contains the following general formula (1-1), A polymer of at least one of the repeating units represented by the general formula (1-2) and the general formula (1-3), the elastic modulus of the resin layer is 0.1 GPa to 3.0 GPa, at 23°C The dielectric loss tangent of the resin layer at a frequency of 10 GHz is 0.001 to 0.01, and the relative dielectric constant is 2.0 to 3.0. [化1]
Figure 02_image001
[In the general formulas (1-1) to (1-3), R 1 is each independently a halogen atom, a monovalent hydrocarbon group having 1 to 20 carbons, a monovalent halogenated hydrocarbon group having 1 to 20 carbons, A salt of a nitro group, a cyano group, a primary amino group to a tertiary amino group, or a primary amino group to a tertiary amino group. n is an integer of 0-2 each independently. When n is 2, a plurality of R 1 may be the same or different, and may be bonded in any combination to form a part of the ring structure. ]

於所述高頻電路用積層體的一態樣中, 所述樹脂層的厚度可為1 μm~30 μm,且所述膜層的厚度可為10 μm~300 μm。In one aspect of the laminate for high-frequency circuits, The thickness of the resin layer may be 1 μm to 30 μm, and the thickness of the film layer may be 10 μm to 300 μm.

於所述高頻電路用積層體的任一態樣中, 所述樹脂層與所述膜層的剝離強度可為5.0 N/cm以上。In any aspect of the multilayer body for high-frequency circuits, The peel strength of the resin layer and the film layer may be 5.0 N/cm or more.

於所述高頻電路用積層體的任一態樣中, 可於不與所述膜層相接的所述樹脂層的面上進一步相接積層金屬層而成。In any aspect of the multilayer body for high-frequency circuits, A metal layer may be further laminated on the surface of the resin layer that is not in contact with the film layer.

於所述高頻電路用積層體的任一態樣中, 所述樹脂層與所述金屬層的剝離強度可為5.0 N/cm以上。In any aspect of the multilayer body for high-frequency circuits, The peel strength of the resin layer and the metal layer may be 5.0 N/cm or more.

於所述高頻電路用積層體的任一態樣中, 所述金屬層的厚度可為3 μm~50 μm。In any aspect of the multilayer body for high-frequency circuits, The thickness of the metal layer may be 3 μm-50 μm.

於所述高頻電路用積層體的任一態樣中, 所述膜層可為選自由聚醯亞胺、聚醚醯亞胺、液晶聚合物、聚萘二甲酸乙二酯、聚苯乙烯、環烯烴聚合物、聚醚醚酮、聚伸芳基醚酮、及聚苯醚所組成的群組中的一種。In any aspect of the multilayer body for high-frequency circuits, The film layer can be selected from polyimide, polyetherimide, liquid crystal polymer, polyethylene naphthalate, polystyrene, cycloolefin polymer, polyether ether ketone, poly arylene ether One of the group consisting of ketones and polyphenylene ethers.

本發明的柔性印刷基板的一態樣中, 包括上述任一態樣的高頻電路用積層體。In one aspect of the flexible printed circuit board of the present invention, A laminate for high-frequency circuits including any of the above-mentioned aspects.

本發明的高頻電路用積層體的製造方法的一態樣包括: 對玻璃轉移溫度為150℃以上的膜層與表面粗糙度Ra為1 nm~100 nm的B階樹脂層於50℃~200℃下進行加熱並施加1 kN/m~19 kN/m的線負荷來加以貼合的步驟。One aspect of the manufacturing method of the laminated body for high-frequency circuits of the present invention includes: The film layer with a glass transition temperature of 150℃ or higher and the B-stage resin layer with a surface roughness Ra of 1 nm-100 nm are heated at 50℃~200℃ and a linear load of 1 kN/m~19 kN/m is applied. To make the steps of fitting.

於所述高頻電路用積層體的製造方法的一態樣中, 可更包括:於所述B階樹脂層的貼合有所述膜層之面的背面,貼合表面粗糙度Ra為10 nm~300 nm的金屬層的步驟。In one aspect of the manufacturing method of the laminated body for high-frequency circuits, It may further include: a step of attaching a metal layer with a surface roughness Ra of 10 nm to 300 nm on the back surface of the B-stage resin layer on which the film layer is attached.

本發明的B階片的一態樣為 具有B階樹脂層、以及形成於所述B階樹脂層的至少其中一面的膜層的B階片,且 於所述B階樹脂層進行硬化而成為C階樹脂層時, 所述C階樹脂層的彈性係數為0.1 GPa~3.0 GPa, 所述C階樹脂層及所述膜層的於23℃下頻率10 GHz下的介電損耗正切為0.001~0.01,且相對介電常數為2.0~3.0。One aspect of the B-stage film of the present invention is A B-stage sheet having a B-stage resin layer and a film layer formed on at least one side of the B-stage resin layer, and When the B-stage resin layer is cured to become a C-stage resin layer, The elastic coefficient of the C-stage resin layer is 0.1 GPa~3.0 GPa, The C-stage resin layer and the film layer have a dielectric loss tangent of 0.001-0.01 at a frequency of 10 GHz at 23° C., and a relative dielectric constant of 2.0-3.0.

本發明的積層體捲繞體的一態樣為 所述任一態樣的高頻電路用積層體捲繞於半徑10 mm~100 mm的卷芯而成。One aspect of the laminated body wound body of the present invention is The laminated body for high-frequency circuits of any of the above-mentioned aspects is formed by winding a core having a radius of 10 mm to 100 mm.

[發明的效果] 根據本發明的高頻電路用積層體,可製造減少高頻電路中的電訊號的傳輸損失、且平滑性優異的電路基板。另外,根據本發明的高頻電路用積層體的製造方法,可製造可藉由低溫下的貼合來製造、且樹脂層與膜層間的接著性優異的高頻電路用積層體。進而,根據本發明的積層體捲繞體,即便於將可減少高頻訊號的傳輸損失的高頻電路用積層體捲繞於卷芯並加以保管的情況下,亦可有效地抑制捲曲皺痕。[Effects of the invention] According to the laminate for a high-frequency circuit of the present invention, a circuit board with reduced transmission loss of electric signals in a high-frequency circuit and excellent in smoothness can be manufactured. Moreover, according to the manufacturing method of the laminated body for high frequency circuits of this invention, the laminated body for high frequency circuits which can be manufactured by bonding at low temperature and is excellent in the adhesiveness between a resin layer and a film layer can be manufactured. Furthermore, according to the laminated body wound body of the present invention, even when the laminated body for high-frequency circuits, which can reduce the transmission loss of high-frequency signals, is wound on the winding core and stored, curling wrinkles can be effectively suppressed. .

以下,對本發明的較佳實施形態進行詳細說明。再者,本發明並不僅限定於以下所記載的實施形態,應理解為亦包含於不變更本發明的主旨的範圍內所實施的各種變形例者。Hereinafter, preferred embodiments of the present invention will be described in detail. In addition, the present invention is not limited to the embodiments described below, but should be understood to include various modifications implemented in a range that does not change the gist of the present invention.

本說明書中,使用「~」所記載的數值範圍是包含「~」的前後所記載的數值作為下限值及上限值的含義。In this specification, the numerical range described in "~" includes the numerical values described before and after "~" as the meaning of the lower limit and the upper limit.

1.高頻電路用積層體 如以下般定義本說明書中所使用的用語。 ·所謂「高頻訊號」,是指10 GHz以上的頻率的電訊號或電波。 ·所謂「高頻電路用積層體」,是指用以於製造以10 GHz以上的頻率進行驅動的高頻電路時使用的積層體。 ·所謂「B階樹脂層」,是指樹脂半硬化的狀態的層。 ·所謂「C階樹脂層」,是指樹脂完全硬化的狀態的層。再者,本申請案發明中,亦有時將「C階樹脂層」簡稱為「樹脂層」。 ·所謂「B階片」,是指包含在膜層的至少其中一面形成有B階樹脂層的積層結構的片。 ·所謂「捲繞體」,是指相同寬度的高頻電路用積層體於卷芯上捲繞規定的長度而成者。卷長或寬度並無特別限定,通常卷長為0.5 m~100 m,寬度為數十mm~1000 mm左右。1. Laminated body for high frequency circuit The terms used in this specification are defined as follows. ·The so-called "high-frequency signal" refers to electrical signals or waves with frequencies above 10 GHz. ·The so-called "layered body for high-frequency circuits" refers to the layered body used in the manufacture of high-frequency circuits that are driven at frequencies above 10 GHz. ·The so-called "B-stage resin layer" refers to a layer in a state where the resin is semi-cured. ·The "C-stage resin layer" refers to a layer in a state where the resin is completely cured. Furthermore, in the invention of this application, the "C-stage resin layer" is sometimes simply referred to as the "resin layer". · The "B-stage sheet" refers to a sheet including a laminated structure in which a B-stage resin layer is formed on at least one surface of a film layer. ·The term "wound body" refers to a laminated body for high-frequency circuits of the same width wound around a winding core for a predetermined length. The roll length or width is not particularly limited, but the roll length is usually 0.5 m to 100 m, and the width is about tens of mm to 1000 mm.

本實施形態的高頻電路用積層體只要具有膜層與樹脂層相接並積層而成的結構即可,亦可形成為包含該結構的多層結構。另外,本實施形態的高頻電路用積層體亦可於不與膜層相接的樹脂層的表面進一步積層有金屬層。所述各層的組合或順序可為了製造高頻電路而任意選擇。The laminate for a high-frequency circuit of the present embodiment only has to have a structure in which a film layer and a resin layer are in contact with each other and laminated, and may be formed into a multilayer structure including this structure. In addition, the laminated body for high-frequency circuits of this embodiment may further have a metal layer laminated on the surface of the resin layer that is not in contact with the film layer. The combination or order of the layers can be arbitrarily selected for manufacturing a high-frequency circuit.

本實施形態的高頻電路用積層體是由膜層與樹脂層相接並積層而成者,於膜層與樹脂層之間並不介隔存在底塗樹脂層之類的接著層。一般的電路用積層體中,為了提高膜層與樹脂層的密接性而使接著層介隔存在於樹脂層與膜層之間。接著層主要使用含有具有極性官能基的聚合物的接著劑,並利用塗佈等方法來形成。然而,此種接著層的電特性差,因此擔負絕緣功能的樹脂層的有效介電常數或有效介電損失變大,不適於高頻電路。相對於此,本實施形態的高頻電路用積層體中即便不使用接著劑,膜層與樹脂層的密接性亦良好。此外,藉由膜層與樹脂層相接並積層,成功獲得不使樹脂層的有效電特性劣化並適於高頻電路的積層體。The laminate for high-frequency circuits of the present embodiment is formed by a film layer and a resin layer in contact with each other and laminated, and an adhesive layer such as a primer resin layer is not interposed between the film layer and the resin layer. In a general laminate for circuits, an adhesive layer is interposed between the resin layer and the film layer in order to improve the adhesion between the film layer and the resin layer. The adhesive layer mainly uses an adhesive containing a polymer having a polar functional group, and is formed by a method such as coating. However, this type of adhesive layer has poor electrical properties, and therefore the effective dielectric constant or effective dielectric loss of the resin layer that has an insulating function becomes large, and it is not suitable for high-frequency circuits. On the other hand, even if an adhesive is not used in the laminated body for high frequency circuits of this embodiment, the adhesiveness of a film layer and a resin layer is good. In addition, the film layer and the resin layer are in contact with each other and laminated, so as to successfully obtain a laminated body suitable for high-frequency circuits without deteriorating the effective electrical characteristics of the resin layer.

本實施形態的高頻電路用積層體的樹脂層與膜層的剝離強度較佳為5.0 N/cm以上,更佳為5.3 N/cm以上,特佳為6.0 N/cm以上。本實施形態的高頻電路用積層體具有所述範圍的剝離強度,因此即便不使用接著劑,金屬層與樹脂層的密接性亦良好。再者,剝離強度可依照「IPC-TM-650 2.4.9」中所記載的方法來測定。The peel strength between the resin layer and the film layer of the laminate for high-frequency circuits of this embodiment is preferably 5.0 N/cm or more, more preferably 5.3 N/cm or more, and particularly preferably 6.0 N/cm or more. The laminate for a high-frequency circuit of the present embodiment has a peel strength in the above-mentioned range, and therefore, even if an adhesive is not used, the adhesion between the metal layer and the resin layer is good. In addition, the peel strength can be measured in accordance with the method described in "IPC-TM-650 2.4.9".

本實施形態的高頻電路用積層體的厚度較佳為20 μm~200 μm,更佳為30 μm~180 μm,特佳為50 μm~150 μm。若高頻電路用積層體的厚度處於所述範圍,則不僅可製作進行減薄化的高頻電路基板,而且於捲繞於卷芯的情況下不易產生捲曲皺痕。The thickness of the laminate for high-frequency circuits of this embodiment is preferably 20 μm to 200 μm, more preferably 30 μm to 180 μm, and particularly preferably 50 μm to 150 μm. If the thickness of the high-frequency circuit laminate is in the above-mentioned range, not only can a thinned high-frequency circuit board be produced, but also curling wrinkles are less likely to occur when wound on a core.

另外,於卷芯形成有階差部的情況下,高頻電路用積層體的厚度特佳為階差部的高度(μm)±10 μm。若高頻電路用積層體的厚度為所述範圍內,則可消除卷芯的階差部與高頻電路用積層體的接合部的階差,因此可更有效地抑制積層體捲繞體的壓痕的形成。In addition, when the step portion is formed in the winding core, the thickness of the high-frequency circuit laminate is particularly preferably the height (μm) of the step portion ±10 μm. If the thickness of the high-frequency circuit laminate is within the above-mentioned range, the step difference between the step portion of the winding core and the junction portion of the high-frequency circuit laminate can be eliminated, and therefore it is possible to more effectively suppress the winding of the laminate. The formation of indentation.

以下,對構成本實施形態的高頻電路用積層體的各層的構成、製造方法進行詳細說明。Hereinafter, the structure and manufacturing method of each layer which comprises the laminated body for high frequency circuits of this embodiment is demonstrated in detail.

1.1.樹脂層 本實施形態的高頻電路用積層體包括樹脂層。樹脂層的彈性係數為0.1 GPa~3.0 GPa,較佳為0.2 GPa~2.5 GPa。若樹脂層的彈性係數為所述範圍,則會成為柔軟性優異的高頻電路用積層體,因此可以更自由的條件製造電路基板。所謂樹脂層的彈性係數,為拉伸彈性係數,可依照日本工業標準(Japanese Industrial Standards,JIS)K 7161來測定。1.1. Resin layer The laminate for high-frequency circuits of this embodiment includes a resin layer. The elastic coefficient of the resin layer is 0.1 GPa to 3.0 GPa, preferably 0.2 GPa to 2.5 GPa. If the coefficient of elasticity of the resin layer is in the above range, it becomes a laminate for high-frequency circuits having excellent flexibility, and therefore, a circuit board can be manufactured under more free conditions. The so-called coefficient of elasticity of the resin layer is the coefficient of tensile elasticity, which can be measured in accordance with Japanese Industrial Standards (JIS) K 7161.

23℃下的樹脂層的頻率10 GHz下的相對介電常數為2.0~3.0,較佳為2.1~2.8。另外,樹脂層於23℃下頻率10 GHz下的介電損耗正切為0.001~0.01,較佳為0.002~0.009。若相對介電常數及介電損耗正切為所述範圍,則可製造高頻特性優異的電路基板。23℃下的樹脂層的頻率10 GHz下的相對介電常數及介電損耗正切可使用空腔諧振器攝動法介電常數測定裝置來測定。The relative dielectric constant of the resin layer at a frequency of 10 GHz at 23° C. is 2.0 to 3.0, preferably 2.1 to 2.8. In addition, the dielectric loss tangent of the resin layer at a frequency of 10 GHz at 23° C. is 0.001 to 0.01, preferably 0.002 to 0.009. If the relative dielectric constant and the dielectric loss tangent fall within the above ranges, a circuit board excellent in high-frequency characteristics can be manufactured. The relative dielectric constant and dielectric loss tangent of the resin layer at a frequency of 10 GHz at 23° C. can be measured using a cavity resonator perturbation method dielectric constant measuring device.

另外,樹脂層的厚度的下限較佳為1 μm,更佳為3 μm,特佳為5 μm。樹脂層的厚度的上限較佳為30 μm,更佳為25 μm。In addition, the lower limit of the thickness of the resin layer is preferably 1 μm, more preferably 3 μm, and particularly preferably 5 μm. The upper limit of the thickness of the resin layer is preferably 30 μm, more preferably 25 μm.

於本申請案發明中,樹脂層亦包括包含不同的多個樹脂層的態樣。於樹脂層包含多個樹脂層的情況下,各樹脂單層的彈性係數、相對介電常數、介電損耗正切不需要限定於上述中記載的較佳的範圍,只要整體成為較佳的範圍即可。In the invention of this application, the resin layer also includes the aspect including a plurality of different resin layers. In the case where the resin layer includes a plurality of resin layers, the elastic modulus, relative permittivity, and dielectric loss tangent of each resin single layer need not be limited to the preferred ranges described above, as long as the whole becomes a preferred range. can.

此種樹脂層的製造方法並無特別限定,但可藉由將樹脂層用組成物塗佈於膜層或金屬箔等基材,進行擠出成形而製作自支撐膜等方法來製作。The method for producing such a resin layer is not particularly limited, but it can be produced by methods such as applying the composition for the resin layer to a substrate such as a film layer or metal foil, and performing extrusion molding to produce a self-supporting film.

樹脂層用組成物的組成只要含有後述的具有由下述通式(1-1)、通式(1-2)及通式(1-3)所表示的重複單元中的至少一種重複單元的聚合物,則並無特別限定,亦可含有硬化性化合物、視需要的其他聚合物、硬化助劑、溶媒。The composition of the resin layer composition should contain at least one of the repeating units represented by the following general formula (1-1), general formula (1-2) and general formula (1-3) as described later The polymer is not particularly limited, and may contain a curable compound, other polymers, curing aids, and solvents if necessary.

1.1.1.樹脂層用組成物 <聚合物> 樹脂層用組成物中,作為聚合物,含有具有由下述通式(1-1)、通式(1-2)及通式(1-3)所表示的重複單元中的至少一種重複單元的聚合物(以下,亦稱為「特定聚合物」)。另外,樹脂層用組成物可適時含有其他聚合物,例如環氧樹脂、聚醯亞胺、聚芳烴(polyarylenes)等具有低介電常數且低介電損耗正切特性的公知材料。1.1.1. Composition for resin layer <Polymer> The composition for the resin layer contains at least one of the repeating units represented by the following general formula (1-1), general formula (1-2) and general formula (1-3) as a polymer The polymer (hereinafter, also referred to as "specific polymer"). In addition, the composition for the resin layer may contain other polymers, such as epoxy resin, polyimide, polyarylenes, and other known materials having low dielectric constant and low dielectric loss tangent characteristics.

[化2]

Figure 02_image001
[式(1-1)~式(1-3)中,R1 分別獨立地為鹵素原子、碳數1~20的一價烴基、碳數1~20的一價鹵化烴基、硝基、氰基、一級胺基~三級胺基、或一級胺基~三級胺基的鹽。n分別獨立地為0~2的整數。於n為2的情況下,多個R1 可相同亦可不同,且可以任意的組合鍵結而形成環結構的一部分。][化2]
Figure 02_image001
[In formulas (1-1) to (1-3), R 1 is each independently a halogen atom, a monovalent hydrocarbon group with 1 to 20 carbons, a monovalent halogenated hydrocarbon group with 1 to 20 carbons, a nitro group, a cyano group A salt of an amino group, a primary amino group to a tertiary amino group, or a primary amino group to a tertiary amino group. n is an integer of 0-2 each independently. When n is 2, a plurality of R 1 may be the same or different, and may be bonded in any combination to form a part of the ring structure. ]

R1 較佳為鹵素原子、碳數1~6的一價烴基、碳數1~6的一價鹵化烴基、硝基、氰基、一級胺基~三級胺基、或一級胺基~三級胺基的鹽,更佳為氟原子、氯原子、甲基、硝基、氰基、第三丁基、苯基、胺基。n較佳為0或1,更佳為0。R 1 is preferably a halogen atom, a monovalent hydrocarbon group with 1 to 6 carbons, a monovalent halogenated hydrocarbon group with 1 to 6 carbons, a nitro group, a cyano group, a primary amino group to a tertiary amino group, or a primary amino group to a tertiary amino group. The salt of the grade amino group is more preferably a fluorine atom, a chlorine atom, a methyl group, a nitro group, a cyano group, a tertiary butyl group, a phenyl group, or an amino group. n is preferably 0 or 1, more preferably 0.

相對於重複單元的其中一結合鍵而言的另一結合鍵的位置並無特別限定,為了提昇提供重複單元的單體的聚合反應性,較佳為間位。另外,重複單元較佳為具有嘧啶骨架的由所述通式(1-2)所表示的重複單元。The position of the other bonding bond relative to one of the bonding bonds of the repeating unit is not particularly limited. In order to improve the polymerization reactivity of the monomer providing the repeating unit, the meta position is preferred. In addition, the repeating unit is preferably a repeating unit represented by the general formula (1-2) having a pyrimidine skeleton.

作為提供此種重複單元的單體,例如可列舉:4,6-二氯嘧啶、4,6-二溴嘧啶、2,4-二氯嘧啶、2,5-二氯嘧啶、2,5-二溴嘧啶、5-溴-2-氯嘧啶、5-溴-2-氟嘧啶、5-溴-2-碘嘧啶、2-氯-5-氟嘧啶、2-氯-5-碘嘧啶、2,4-二氯-5-氟嘧啶、2,4-二氯-5-碘嘧啶、5-氯-2,4,6-三氟嘧啶、2,4,6-三氯嘧啶、4,5,6-三氯嘧啶、2,4,5-三氯嘧啶、2,4,5,6-四氯嘧啶、2-苯基-4,6-二氯嘧啶、2-甲硫基-4,6-二氯嘧啶、2-甲基磺醯基-4,6-二氯嘧啶、5-甲基-4,6-二氯嘧啶、2-胺基-4,6-二氯嘧啶、5-胺基-4,6-二氯嘧啶、2,5-二胺基-4,6-二氯嘧啶、4-胺基-2,6-二氯嘧啶、5-甲氧基-4,6-二氯嘧啶、5-甲氧基-2,4-二氯嘧啶、5-氟-2,4-二氯嘧啶、5-溴-2,4-二氯嘧啶、5-碘-2,4-二氯嘧啶、2-甲基-4,6-二氯嘧啶、5-甲基-4,6-二氯嘧啶、6-甲基-2,4-二氯嘧啶、5-甲基-2,4-二氯嘧啶、5-硝基-2,4-二氯嘧啶、4-胺基-2-氯-5-氟嘧啶、2-甲基-5-胺基-4,6-二氯嘧啶、5-溴-4-氯-2-甲硫基嘧啶;3,6-二氯噠嗪、3,5-二氯噠嗪、4-甲基-3,6-二氯噠嗪;2,3-二氯吡嗪、2,6-二氯吡嗪、2,5-二溴吡嗪、2,6-二溴吡嗪、2-胺基-3,5-二溴吡嗪、5,6-二氰基-2,3-二氯吡嗪等。再者,該些單體可單獨使用一種,亦可併用兩種以上。As a monomer providing such a repeating unit, for example, 4,6-dichloropyrimidine, 4,6-dibromopyrimidine, 2,4-dichloropyrimidine, 2,5-dichloropyrimidine, 2,5- Dibromopyrimidine, 5-bromo-2-chloropyrimidine, 5-bromo-2-fluoropyrimidine, 5-bromo-2-iodopyrimidine, 2-chloro-5-fluoropyrimidine, 2-chloro-5-iodopyrimidine, 2 ,4-Dichloro-5-fluoropyrimidine, 2,4-Dichloro-5-iodopyrimidine, 5-chloro-2,4,6-trifluoropyrimidine, 2,4,6-trichloropyrimidine, 4,5 ,6-Trichloropyrimidine, 2,4,5-trichloropyrimidine, 2,4,5,6-tetrachloropyrimidine, 2-phenyl-4,6-dichloropyrimidine, 2-methylthio-4, 6-dichloropyrimidine, 2-methylsulfonyl-4,6-dichloropyrimidine, 5-methyl-4,6-dichloropyrimidine, 2-amino-4,6-dichloropyrimidine, 5- Amino-4,6-dichloropyrimidine, 2,5-diamino-4,6-dichloropyrimidine, 4-amino-2,6-dichloropyrimidine, 5-methoxy-4,6- Dichloropyrimidine, 5-methoxy-2,4-dichloropyrimidine, 5-fluoro-2,4-dichloropyrimidine, 5-bromo-2,4-dichloropyrimidine, 5-iodo-2,4- Dichloropyrimidine, 2-methyl-4,6-dichloropyrimidine, 5-methyl-4,6-dichloropyrimidine, 6-methyl-2,4-dichloropyrimidine, 5-methyl-2, 4-dichloropyrimidine, 5-nitro-2,4-dichloropyrimidine, 4-amino-2-chloro-5-fluoropyrimidine, 2-methyl-5-amino-4,6-dichloropyrimidine , 5-Bromo-4-chloro-2-methylthiopyrimidine; 3,6-dichloropyridazine, 3,5-dichloropyridazine, 4-methyl-3,6-dichloropyridazine; 2, 3-dichloropyrazine, 2,6-dichloropyrazine, 2,5-dibromopyrazine, 2,6-dibromopyrazine, 2-amino-3,5-dibromopyrazine, 5, 6-dicyano-2,3-dichloropyrazine and the like. In addition, these monomers may be used individually by 1 type, and may use 2 or more types together.

於將特定聚合物中的所有重複單元的合計設為100莫耳%的情況下,特定聚合物中的由所述通式(1-1)、通式(1-2)及通式(1-3)所表示的重複單元的含有比例較佳為5莫耳%~95莫耳%,更佳為10莫耳%~60莫耳%。When the total of all repeating units in the specific polymer is set to 100 mol%, the specific polymer is represented by the general formula (1-1), the general formula (1-2) and the general formula (1). -3) The content of the repeating unit is preferably 5 mol% to 95 mol%, more preferably 10 mol% to 60 mol%.

特定聚合物的合成方法並無特別限定,可使用公知的方法。例如可藉由將提供由所述通式(1-1)、通式(1-2)及通式(1-3)所表示的重複單元中的至少一種重複單元的單體與視需要的其他單體於有機溶媒中,與鹼金屬等一起進行加熱來合成。The synthesis method of the specific polymer is not particularly limited, and a known method can be used. For example, a monomer that provides at least one of the repeating units represented by the general formula (1-1), the general formula (1-2) and the general formula (1-3) and optionally Other monomers are synthesized by heating together with alkali metals and the like in an organic solvent.

特定聚合物的重量平均分子量(Mw)的下限較佳為500,更佳為1,000,進而更佳為10,000,特佳為30,000。重量平均分子量(Mw)的上限較佳為600,000,更佳為400,000,進而更佳為300,000,特佳為200,000。The lower limit of the weight average molecular weight (Mw) of the specific polymer is preferably 500, more preferably 1,000, still more preferably 10,000, and particularly preferably 30,000. The upper limit of the weight average molecular weight (Mw) is preferably 600,000, more preferably 400,000, still more preferably 300,000, particularly preferably 200,000.

特定聚合物的玻璃轉移溫度(Tg)的下限較佳為150℃,更佳為180℃。玻璃轉移溫度(Tg)的上限較佳為320℃,更佳為300℃。The lower limit of the glass transition temperature (Tg) of the specific polymer is preferably 150°C, more preferably 180°C. The upper limit of the glass transition temperature (Tg) is preferably 320°C, more preferably 300°C.

特定聚合物較佳為更具有由下述通式(2)所表示的重複單元。The specific polymer preferably further has a repeating unit represented by the following general formula (2).

[化3]

Figure 02_image006
(式(2)中,R3 及R4 分別獨立地為鹵素原子、硝基、氰基或碳數1~20的一價有機基,c及d分別獨立地為0~8的整數,e、f、y分別獨立地為0~2的整數,L為單鍵、-O-、-S-、-CO-、-SO-、-SO2 -或碳數1~20的二價有機基。)[化3]
Figure 02_image006
(In formula (2), R 3 and R 4 are each independently a halogen atom, a nitro group, a cyano group, or a monovalent organic group having 1 to 20 carbons, c and d are each independently an integer of 0 to 8, e , F, y are each independently an integer of 0-2, and L is a single bond, -O-, -S-, -CO-, -SO-, -SO 2 -or a divalent organic group with 1 to 20 carbons .)

作為由R3 及R4 所表示的鹵素原子,例如可列舉:氟原子、氯原子、溴原子、碘原子等。Examples of the halogen atom represented by R 3 and R 4 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

作為由R3 及R4 所表示的碳數1~20的一價有機基,例如可列舉:一價鏈狀烴基、一價脂環式烴基、一價芳香族烴基、一價鹵化烴基等。Examples of the monovalent organic group having 1 to 20 carbons represented by R 3 and R 4 include a monovalent chain hydrocarbon group, a monovalent alicyclic hydrocarbon group, a monovalent aromatic hydrocarbon group, and a monovalent halogenated hydrocarbon group.

作為所述一價鏈狀烴基,例如可列舉:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、正戊基等烷基;乙烯基、丙烯基、丁烯基、戊烯基等烯基;乙炔基、丙炔基、丁炔基、戊炔基等炔基等。Examples of the monovalent chain hydrocarbon group include alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, second butyl, tertiary butyl, and n-pentyl. Group; alkenyl groups such as vinyl, propenyl, butenyl, and pentenyl; alkynyl groups such as ethynyl, propynyl, butynyl, and pentynyl.

作為所述一價脂環式烴基,例如可列舉:環丙基、環丁基、環戊基、環己基等單環的環烷基;降冰片基、金剛烷基等多環的環烷基;環丙烯基、環丁烯基、環戊烯基、環己烯基等單環的環烯基;降冰片烯基等多環的環烯基等。Examples of the monovalent alicyclic hydrocarbon group include monocyclic cycloalkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl; and polycyclic cycloalkyl groups such as norbornyl and adamantyl. ; Cyclopropenyl, cyclobutenyl, cyclopentenyl, cyclohexenyl and other monocyclic cycloalkenyl groups; norbornenyl and other polycyclic cycloalkenyl groups.

作為所述一價芳香族烴基,例如可列舉:苯基、甲苯基、二甲苯基、萘基、蒽基等芳基;苄基、苯乙基、苯基丙基、萘基甲基等芳烷基等。Examples of the monovalent aromatic hydrocarbon group include aryl groups such as phenyl, tolyl, xylyl, naphthyl, and anthryl; and aromatic groups such as benzyl, phenethyl, phenylpropyl, and naphthylmethyl. Alkyl and so on.

作為所述一價鹵化烴基,例如可列舉藉由氟原子、氯原子、溴原子、碘原子等鹵素原子將作為所述由R3 及R4 所表示的基而例示的碳數1~20的一價烴基的氫原子的一部分或全部取代的基等。As the monovalent halogenated hydrocarbon group, for example, a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom will be exemplified as the group represented by R 3 and R 4 with 1 to 20 carbon atoms. A group in which part or all of the hydrogen atoms of the monovalent hydrocarbon group are substituted, and the like.

作為由L所表示的碳數1~20的二價有機基,例如可列舉:碳數1~20的二價鏈狀烴基、碳數1~20的二價脂環式烴基、碳數1~20的二價氟化鏈狀烴基、碳數6~20的二價芳香族烴基或碳數6~20的二價氟化芳香族烴基等。Examples of the divalent organic group having 1 to 20 carbons represented by L include: a divalent chain hydrocarbon group having 1 to 20 carbons, a divalent alicyclic hydrocarbon group having 1 to 20 carbons, and a carbon number of 1 to 20. A divalent fluorinated chain hydrocarbon group of 20, a divalent aromatic hydrocarbon group of 6 to 20 carbons, or a divalent fluorinated aromatic hydrocarbon group of 6 to 20 carbons, etc.

作為所述二價鏈狀烴基,例如可列舉:亞甲基、伸乙基、伸正丙基、伸異丙基、伸正丁基、伸第二丁基、伸第三丁基、伸新戊基、4-甲基-戊烷-2,2-二基、壬烷-1,9-二基等。Examples of the divalent chain hydrocarbon group include: methylene, ethylene, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, and neopentyl. , 4-Methyl-pentane-2,2-diyl, nonane-1,9-diyl, etc.

作為所述二價脂環式烴基,例如可列舉:環丙基、環丁基、環戊基、環己基等單環的環烷基;降冰片基、金剛烷基等多環的環烷基;環丙烯基、環丁烯基、環戊烯基、環己烯基等單環的環烯基;降冰片烯基等多環的環烯基等。Examples of the divalent alicyclic hydrocarbon group include: monocyclic cycloalkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl; and polycyclic cycloalkyl groups such as norbornyl and adamantyl groups. ; Cyclopropenyl, cyclobutenyl, cyclopentenyl, cyclohexenyl and other monocyclic cycloalkenyl groups; norbornenyl and other polycyclic cycloalkenyl groups.

作為所述二價氟化鏈狀烴基,例如可列舉藉由氟原子將作為所述由L所表示的基而例示的碳數1~20的二價鏈狀烴基的氫原子的一部分或全部取代的基等。As the divalent fluorinated chain hydrocarbon group, for example, a part or all of the hydrogen atoms of the divalent chain hydrocarbon group having 1 to 20 carbons exemplified as the group represented by L may be substituted by a fluorine atom The base and so on.

作為所述二價芳香族烴基,例如可列舉:苯基、甲苯基、二甲苯基、萘基、蒽基等芳基;苄基、苯乙基、苯基丙基、萘基甲基等芳烷基等。Examples of the divalent aromatic hydrocarbon group include aryl groups such as phenyl, tolyl, xylyl, naphthyl, and anthryl; and aromatic groups such as benzyl, phenethyl, phenylpropyl, and naphthylmethyl. Alkyl and so on.

於將特定聚合物中的所有重複單元的合計設為100莫耳%的情況下,特定聚合物中的由所述通式(2)所表示的重複單元的含有比例較佳為5莫耳%~95莫耳%,更佳為10莫耳%~60莫耳%。When the total of all repeating units in the specific polymer is 100 mol%, the content of the repeating unit represented by the general formula (2) in the specific polymer is preferably 5 mol% ~95 mol%, more preferably 10 mol% to 60 mol%.

作為該些聚合物,例如可例示日本專利特開2015-209511號公報、國際公開第2016/143447號、日本專利特開2017-197725號公報、日本專利特開2018-024827號公報等中記載的聚合物。Examples of these polymers include those described in Japanese Patent Laid-Open No. 2015-209511, International Publication No. 2016/143447, Japanese Patent Laid-Open No. 2017-197725, Japanese Patent Laid-Open No. 2018-024827, etc. polymer.

相對於後述的硬化性化合物及聚合物的合計100質量份,樹脂層用組成物中的聚合物的含有比例較佳為10質量份以上且90質量份以下。The content ratio of the polymer in the resin layer composition is preferably 10 parts by mass or more and 90 parts by mass or less with respect to 100 parts by mass in total of the curable compound and polymer described later.

<硬化性化合物> 硬化性化合物為藉由照射熱或光(例如,可見光、紫外線、近紅外線、遠紅外線、電子束等)而硬化的化合物,亦可為必需後述硬化助劑者。作為此種硬化性化合物,例如可列舉:環氧化合物、氰酸酯化合物、乙烯基化合物、矽酮化合物、噁嗪化合物、馬來醯亞胺化合物、烯丙基化合物、丙烯酸化合物、甲基丙烯酸化合物、胺基甲酸酯化合物、氧雜環丁烷化合物、羥甲基化合物、及炔丙基化合物。該些可單獨使用一種,亦可併用兩種以上。該些中,為了提高與所述特定聚合物的相容性、耐熱性等,較佳為環氧化合物、氰酸酯化合物、乙烯基化合物、矽酮化合物、噁嗪化合物、馬來醯亞胺化合物、及烯丙基化合物中的至少一種,更佳為環氧化合物、氰酸酯化合物、乙烯基化合物、烯丙基化合物、及矽酮化合物中的至少一種。<Curable compound> The curable compound is a compound that is cured by irradiating heat or light (for example, visible light, ultraviolet rays, near infrared rays, far infrared rays, electron beams, etc.), and may also be those that require a hardening auxiliary agent described later. Examples of such curable compounds include epoxy compounds, cyanate ester compounds, vinyl compounds, silicone compounds, oxazine compounds, maleimide compounds, allyl compounds, acrylic compounds, and methacrylic acid compounds. Compounds, urethane compounds, oxetane compounds, methylol compounds, and propargyl compounds. These may be used individually by 1 type, and may use 2 or more types together. Among these, in order to improve compatibility with the specific polymer, heat resistance, etc., epoxy compounds, cyanate ester compounds, vinyl compounds, silicone compounds, oxazine compounds, and maleimides are preferred. At least one of the compound and the allyl compound is more preferably at least one of an epoxy compound, a cyanate ester compound, a vinyl compound, an allyl compound, and a silicone compound.

作為所述環氧化合物,例如可列舉由下述式(c1-1)~式(c1-6)所表示的化合物。再者,由下述式(c1-6)所表示的化合物為JSR(股)製造的含環氧基的腈基-丁二烯橡膠(nitrile-butadiene rubber,NBR)粒子「XER-81」。作為所述環氧化合物,進而亦可列舉:二環戊二烯-苯酚聚合物的聚縮水甘油醚、苯酚酚醛清漆型液狀環氧化合物、苯乙烯-丁二烯嵌段共聚物的環氧化物、3',4'-環氧環己基甲基-3,4-環氧環己烷羧酸酯等。As said epoxy compound, the compound represented by following formula (c1-1)-a formula (c1-6) is mentioned, for example. In addition, the compound represented by the following formula (c1-6) is an epoxy group-containing nitrile-butadiene rubber (NBR) particle "XER-81" manufactured by JSR (Stocks). Examples of the epoxy compound include: polyglycidyl ether of dicyclopentadiene-phenol polymer, phenol novolak type liquid epoxy compound, epoxy of styrene-butadiene block copolymer Products, 3',4'-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate, etc.

[化4]

Figure 02_image008
[式(c1-5)中,n為0~5000,m獨立地為0~5000。][化4]
Figure 02_image008
[In the formula (c1-5), n is 0 to 5000, and m is independently 0 to 5000. ]

作為所述氰酸酯化合物,例如可列舉由下述式(c2-1)~式(c2-7)所表示的化合物。As said cyanate ester compound, the compound represented by following formula (c2-1)-a formula (c2-7) is mentioned, for example.

[化5]

Figure 02_image010
[式(c2-6)及(c2-7)中,n獨立地為0~30。][化5]
Figure 02_image010
[In formulas (c2-6) and (c2-7), n is independently 0-30. ]

作為所述乙烯基化合物,例如可列舉由下述式(c3-1)~式(c3-5)所表示的化合物。Examples of the vinyl compound include compounds represented by the following formulas (c3-1) to (c3-5).

[化6]

Figure 02_image012
[式(c3-4)中,n為1~5000。][化6]
Figure 02_image012
[In formula (c3-4), n is 1 to 5000. ]

作為所述矽酮化合物,例如可列舉由下述式(c4-1)~式(c4-16)所表示的化合物。再者,作為式(c4-1)中的R,可選擇下述任一種,於選擇包括乙烯基的化合物的情況下,亦可作為所述乙烯基化合物處理,於選擇包括氧雜環丁烷基的化合物的情況下,亦可作為所述氧雜環丁烷化合物處理。另外,式(c4-2)~式(c4-16)中,R分別獨立地為選自烷基、脂環式烴基、芳基、及烯基中的有機基,n為0~1000的整數(較佳為0~100的整數)。Examples of the silicone compound include compounds represented by the following formulas (c4-1) to (c4-16). Furthermore, as R in the formula (c4-1), any one of the following can be selected. In the case of selecting a compound including a vinyl group, it can also be treated as the vinyl compound, and when selecting a compound including oxetane In the case of the compound of the group, it can also be treated as the oxetane compound. In addition, in formulas (c4-2) to (c4-16), R is each independently an organic group selected from an alkyl group, an alicyclic hydrocarbon group, an aryl group, and an alkenyl group, and n is an integer of 0 to 1000 (Preferably an integer of 0-100).

作為烷基,可列舉:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、正戊基等。作為脂環式烴基,可列舉:環丙基、環丁基、環戊基、環己基等單環的環烷基;降冰片基、金剛烷基等多環的環烷基;環丙烯基、環丁烯基、環戊烯基、環己烯基等單環的環烯基;降冰片烯基等多環的環烯基等。作為芳基,可列舉:苯基、甲苯基、二甲苯基、萘基、蒽基等。作為烯基,可列舉:乙烯基、1-丙烯基、2-丙烯基等。Examples of the alkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, second butyl, tertiary butyl, n-pentyl, and the like. Examples of alicyclic hydrocarbon groups include: monocyclic cycloalkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl; polycyclic cycloalkyl groups such as norbornyl and adamantyl; cyclopropenyl, Cyclobutenyl, cyclopentenyl, cyclohexenyl and other monocyclic cycloalkenyl groups; norbornenyl and other polycyclic cycloalkenyl groups. As an aryl group, a phenyl group, a tolyl group, a xylyl group, a naphthyl group, an anthryl group, etc. are mentioned. As an alkenyl group, a vinyl group, 1-propenyl group, 2-propenyl group, etc. are mentioned.

[化7]

Figure 02_image014
[化7]
Figure 02_image014

作為所述噁嗪化合物,例如可列舉由下述式(c5-1)~式(c5-5)所表示的化合物。Examples of the oxazine compound include compounds represented by the following formulas (c5-1) to (c5-5).

[化8]

Figure 02_image016
[化8]
Figure 02_image016

作為所述馬來醯亞胺化合物,例如可列舉由下述式(c6-1)~式(c6-5)所表示的化合物。As said maleimide compound, the compound represented by following formula (c6-1)-a formula (c6-5) is mentioned, for example.

[化9]

Figure 02_image018
[式(c6-2)中,Et為乙基,式(c6-3)中,n為0~30。][化9]
Figure 02_image018
[In the formula (c6-2), Et is an ethyl group, and in the formula (c6-3), n is 0-30. ]

作為所述烯丙基化合物,例如可列舉由下述式(c7-1)~式(c7-6)所表示的化合物。尤其作為該烯丙基化合物,較佳為具有兩個以上(尤其是2個~6個、進而為2個~3個)烯丙基的化合物。As said allyl compound, the compound represented by following formula (c7-1)-a formula (c7-6) is mentioned, for example. In particular, the allyl compound is preferably a compound having two or more (especially 2 to 6, and further 2 to 3) allyl groups.

[化10]

Figure 02_image020
[化10]
Figure 02_image020

作為所述氧雜環丁烷化合物,例如可列舉由下述式(c8-1)~式(c8-3)所表示的化合物。Examples of the oxetane compound include compounds represented by the following formulas (c8-1) to (c8-3).

[化11]

Figure 02_image022
[式(c8-1)及(c8-2)中,由括號括起的重複單元的重複單元數分別獨立地為0~30。][化11]
Figure 02_image022
[In formulas (c8-1) and (c8-2), the number of repeating units of the repeating unit enclosed in parentheses is independently 0-30. ]

作為所述羥甲基化合物,例如可列舉日本專利特開2006-178059號公報、及日本專利特開2012-226297號公報中記載的羥甲基化合物。具體而言,例如可列舉:聚羥甲基化三聚氰胺、六甲氧基甲基三聚氰胺、六乙氧基甲基三聚氰胺、六丙氧基甲基三聚氰胺、六丁氧基甲基三聚氰胺等三聚氰胺系羥甲基化合物;聚羥甲基化二醇脲、四甲氧基甲基二醇脲、四丁氧基甲基二醇脲等二醇脲系羥甲基化合物;3,9-雙[2-(3,5-二胺基-2,4,6-三氮雜苯基)乙基]-2,4,8,10-四氧雜螺[5.5]十一烷、3,9-雙[2-(3,5-二胺基-2,4,6-三氮雜苯基)丙基]-2,4,8,10-四氧雜[5.5]十一烷等將胍胺加以羥甲基化而成的化合物、以及將該化合物中的活性羥甲基的全部或一部分加以烷基醚化而成的化合物等胍胺系羥甲基化合物。As said hydroxymethyl compound, the hydroxymethyl compound described in Unexamined-Japanese-Patent No. 2006-178059 and Unexamined-Japanese-Patent No. 2012-226297 can be mentioned, for example. Specifically, for example, melamine-based methylol groups such as polymethylolated melamine, hexamethoxymethylmelamine, hexaethoxymethylmelamine, hexapropoxymethylmelamine, hexabutoxymethylmelamine, etc. Base compound; polymethylolated glycol urea, tetramethoxymethyl glycol urea, tetrabutoxymethyl glycol urea and other glycol urea methylol compounds; 3,9-bis[2-( 3,5-Diamino-2,4,6-triazaphenyl)ethyl]-2,4,8,10-tetraoxaspiro[5.5]undecane, 3,9-bis[2 -(3,5-diamino-2,4,6-triazaphenyl) propyl]-2,4,8,10-tetraoxa[5.5]undecane, etc. Add guanamine to hydroxymethyl A guanamine-based methylol compound such as a compound obtained by radicalization, and a compound obtained by alkyl-etherifying all or part of the active methylol group in the compound.

作為所述炔丙基化合物,例如可列舉由下述式(c9-1)~式(c9-2)所表示的化合物。Examples of the propargyl compound include compounds represented by the following formulas (c9-1) to (c9-2).

[化12]

Figure 02_image024
[化12]
Figure 02_image024

相對於樹脂層用組成物100質量份,樹脂層用組成物中的硬化性化合物的含有比例較佳為10質量份以上且90質量份以下,更佳為20質量份以上且80質量份以下。The content ratio of the curable compound in the resin layer composition is preferably 10 parts by mass or more and 90 parts by mass or less, and more preferably 20 parts by mass or more and 80 parts by mass or less with respect to 100 parts by mass of the composition for the resin layer.

<硬化助劑> 作為硬化助劑,例如可列舉光反應起始劑(光自由基產生劑、光酸產生劑、光鹼產生劑)等聚合起始劑。作為硬化助劑的具體例,可列舉:鎓鹽化合物、碸化合物、磺酸酯化合物、磺醯亞胺化合物、二磺醯基重氮甲烷化合物、二磺醯基甲烷化合物、肟磺酸酯化合物、肼磺酸酯化合物、三嗪化合物、硝基苄基化合物、苄基咪唑化合物、有機鹵化物類、辛酸金屬鹽、二碸等。該些硬化助劑不論種類如何,可單獨使用一種,亦可併用兩種以上。<Hardening aids> Examples of the curing aid include polymerization initiators such as photoreaction initiators (photoradical generators, photoacid generators, and photobase generators). Specific examples of the curing aid include: onium salt compounds, sulfonium compounds, sulfonate compounds, sulfonylimide compounds, disulfonylimide compounds, disulfonylmethane compounds, and oxime sulfonate compounds , Hydrazine sulfonate compounds, triazine compounds, nitrobenzyl compounds, benzyl imidazole compounds, organic halides, octanoic acid metal salts, dioxins, etc. Regardless of the type of these hardening aids, one kind may be used alone, or two or more kinds may be used in combination.

相對於樹脂層用組成物100質量份,樹脂層用組成物中的硬化助劑的含有比例較佳為5質量份以上且20質量份以下,更佳為5質量份以上且10質量份以下。The content ratio of the curing aid in the resin layer composition is preferably 5 parts by mass or more and 20 parts by mass or less, and more preferably 5 parts by mass or more and 10 parts by mass or less with respect to 100 parts by mass of the composition for the resin layer.

<溶媒> 樹脂層用組成物視需要可含有溶媒。作為溶媒,不僅可列舉例如N,N-二甲基乙醯胺、N,N-二甲基甲醯胺、N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、1,3-二甲基-2-咪唑啶酮等醯胺系溶媒;γ-丁內酯、乙酸丁酯等酯系溶媒;環戊酮、環己酮、甲基乙基酮、二苯甲酮等酮系溶媒;1,2-甲氧基乙烷、二苯基醚等醚系溶媒;1-甲氧基-2-丙醇、丙二醇甲醚乙酸酯等多官能性溶媒;環丁碸、二甲基亞碸、二乙基亞碸、二甲基碸、二乙基碸、二異丙基碸、二苯基碸等碸系溶媒,亦可列舉二氯甲烷、苯、甲苯、二甲苯、二烷氧基苯(烷氧基的碳數:1~4)、三烷氧基苯(烷氧基的碳數:1~4)等。該些溶媒可單獨使用一種,亦可併用兩種以上。<Solvent> The composition for a resin layer may contain a solvent as needed. Examples of solvents include not only N,N-dimethylacetamide, N,N-dimethylformamide, N-methyl-2-pyrrolidone, and N-ethyl-2-pyrrolidone. , 1,3-Dimethyl-2-imidazolidinone and other amide solvents; γ-butyrolactone, butyl acetate and other ester solvents; cyclopentanone, cyclohexanone, methyl ethyl ketone, diphenyl Ketone solvents such as ketone; ether solvents such as 1,2-methoxyethane and diphenyl ether; polyfunctional solvents such as 1-methoxy-2-propanol and propylene glycol methyl ether acetate; ring Butylene, dimethyl sulfide, diethyl sulfide, dimethyl sulfide, diethyl sulfide, diisopropyl sulfide, diphenyl sulfide, and other solid waste solvents, including dichloromethane, benzene, toluene, etc. , Xylene, dialkoxybenzene (carbon number of alkoxy group: 1 to 4), trialkoxybenzene (carbon number of alkoxy group: 1 to 4), etc. These solvents may be used singly, or two or more of them may be used in combination.

於樹脂層用組成物含有溶媒的情況下,相對於除溶媒以外的樹脂層用組成物100質量份,較佳為2000質量份以下,更佳為200質量份以下。When the resin layer composition contains a solvent, it is preferably 2000 parts by mass or less, and more preferably 200 parts by mass or less with respect to 100 parts by mass of the resin layer composition other than the solvent.

<其他成分> 樹脂層用組成物視需要可含有其他成分。作為其他成分,例如可列舉:抗氧化劑、強化劑、潤滑劑、阻燃劑、抗菌劑、著色劑、脫模劑、發泡劑、所述聚合物以外的其他聚合物等。<Other ingredients> The composition for a resin layer may contain other components as needed. Examples of other components include antioxidants, reinforcing agents, lubricants, flame retardants, antibacterial agents, colorants, mold release agents, foaming agents, polymers other than the above-mentioned polymers, and the like.

<樹脂層用組成物的製備方法> 樹脂層用組成物的製備方法並無特別限定,例如可藉由將聚合物、硬化性化合物、及視需要的其他添加劑(例如,硬化助劑、溶媒、抗氧化劑等其他成分)均勻地混合而製備。另外,組成物的形態可設為液狀、膏狀等。<Preparation method of composition for resin layer> The preparation method of the composition for the resin layer is not particularly limited. For example, it can be obtained by uniformly mixing a polymer, a curable compound, and other additives (such as a curing aid, a solvent, an antioxidant, etc.) as necessary. preparation. In addition, the form of the composition may be a liquid form, a paste form, or the like.

1.2.膜層 本實施形態的高頻電路用積層體包括玻璃轉移溫度(Tg)為150℃以上的膜層。作為膜層,較佳為選自由聚醯亞胺(polyimide,PI)、聚醚醯亞胺(polyether imide,PEI)、液晶聚合物(liquid crystal polymer,LCP)、聚萘二甲酸乙二酯(polyethylene naphthalate,PEN)、聚苯乙烯(polystyrene,PS)、環烯烴聚合物(cycloolefin polymer,COP)、聚醚醚酮(polyether-ether-ketone,PEEK)、聚伸芳基醚酮(polyarylene ether ketones,PAEK)及聚苯醚(polyphenylene ether,PPE)所組成的群組中的一種膜。該些中,更佳為聚醯亞胺(PI)、液晶聚合物(LCP)、聚萘二甲酸乙二酯(PEN)、聚醚醚酮(PEEK),特佳為聚醯亞胺(PI)、液晶聚合物(LCP)。另外,於本實施形態的高頻電路用積層體具有多個膜層的情況下,該膜層可使用相同種類的膜,亦可使用不同種類的膜。1.2. Membrane The laminate for high-frequency circuits of this embodiment includes a film layer having a glass transition temperature (Tg) of 150°C or higher. As the film layer, it is preferably selected from polyimide (PI), polyether imide (PEI), liquid crystal polymer (LCP), polyethylene naphthalate ( polyethylene naphthalate (PEN), polystyrene (PS), cycloolefin polymer (COP), polyether-ether-ketone (PEEK), polyarylene ether ketones (polyarylene ether ketones) , PAEK) and polyphenylene ether (polyphenylene ether, PPE) is a kind of membrane in the group. Among these, polyimide (PI), liquid crystal polymer (LCP), polyethylene naphthalate (PEN), polyether ether ketone (PEEK) are more preferred, and polyimide (PI) is particularly preferred. ), Liquid Crystal Polymer (LCP). In addition, when the laminated body for a high-frequency circuit of this embodiment has a plurality of film layers, the same type of film may be used for the film layer, or different types of films may be used.

作為聚醯亞胺(PI)的具體例,可列舉商品名「卡普頓(Kapton)(註冊商標)」(東麗杜邦(Toray Dupont)公司製造)等。作為聚醚醯亞胺(PEI)的具體例,可列舉商品名「思博利爾(Superio)」(三菱化學公司製造)等。作為液晶聚合物(LCP)的具體例,可列舉商品名「威克斯塔(Vecstar)」(可樂麗(Kuraray)公司製造)等。作為聚萘二甲酸乙二酯(PEN)的具體例,可列舉商品名「泰奧奈克斯(Teonex)」(帝人公司製造)等。作為環烯烴聚合物(COP)的具體例,可列舉商品名「澤奧諾阿(Zeonor)」(日本瑞翁(Zeon)公司製造)等。作為聚醚醚酮(PEEK)的具體例,可列舉商品名「APTIV」(京都熱(Victex)公司製造)等。作為聚伸芳基醚酮(PAEK)的具體例,可列舉商品名「AvaSpire」(索爾維(Solvay)公司製造)等。作為聚苯醚(PPE)的具體例,可列舉商品名「改質聚苯醚(NORYL)」(沙特基礎工業(SABIC)公司製造)等。As a specific example of polyimide (PI), a brand name "Kapton (registered trademark)" (manufactured by Toray Dupont) and the like can be cited. As a specific example of polyetherimide (PEI), a brand name "Superio" (manufactured by Mitsubishi Chemical Corporation) and the like can be cited. As a specific example of the liquid crystal polymer (LCP), the trade name "Vecstar" (manufactured by Kuraray) and the like can be cited. As a specific example of polyethylene naphthalate (PEN), a brand name "Teonex" (manufactured by Teijin Corporation), etc. can be cited. As a specific example of the cycloolefin polymer (COP), the trade name "Zeonor" (manufactured by Zeon Corporation) and the like can be cited. As a specific example of polyether ether ketone (PEEK), a brand name "APTIV" (manufactured by Victex Corporation) and the like can be cited. As a specific example of polyarylene ether ketone (PAEK), a brand name "AvaSpire" (manufactured by Solvay) and the like can be cited. As a specific example of polyphenylene ether (PPE), the trade name "modified polyphenylene ether (NORYL)" (manufactured by Saudi Basic Industries (SABIC)) and the like can be cited.

膜層的厚度的下限較佳為10 μm,更佳為15 μm,特佳為20 μm。膜層的厚度的上限較佳為300 μm,更佳為250 μm,進而更佳為200 μm,特佳為180 μm。The lower limit of the thickness of the film layer is preferably 10 μm, more preferably 15 μm, and particularly preferably 20 μm. The upper limit of the thickness of the film layer is preferably 300 μm, more preferably 250 μm, still more preferably 200 μm, particularly preferably 180 μm.

1.3.金屬層 本實施形態的高頻電路用積層體不僅包括膜層,亦可包括金屬層。金屬層較佳為使用金屬箔或濺鍍膜。金屬箔較佳為銅箔。銅箔的種類中存在電解箔與壓延箔,可使用任一種。1.3. Metal layer The laminate for high-frequency circuits of this embodiment may include not only a film layer but also a metal layer. The metal layer is preferably a metal foil or a sputtering film. The metal foil is preferably copper foil. There are electrolytic foils and rolled foils in the types of copper foils, and any of them can be used.

金屬層的表面粗糙度Ra較佳為10 nm~300 nm,更佳為30 nm~200 nm,特佳為30 nm~100 nm。若金屬層的表面粗糙度Ra為所述範圍,則於製成高頻電路用積層體時可進一步提高樹脂層與金屬層的密接性。進而,可使高頻電路用積層體的面內的厚度更均勻,可於使高頻電路用積層體捲繞而為卷狀時抑制樹脂層與金屬層的剝離。再者,金屬層的表面粗糙度Ra是指依據JIS B0601-2001而測定的「算術平均粗糙度」。The surface roughness Ra of the metal layer is preferably 10 nm to 300 nm, more preferably 30 nm to 200 nm, and particularly preferably 30 nm to 100 nm. If the surface roughness Ra of the metal layer is in the above-mentioned range, the adhesiveness between the resin layer and the metal layer can be further improved when it is used as a laminate for high-frequency circuits. Furthermore, the in-plane thickness of the high-frequency circuit laminate can be made more uniform, and the peeling of the resin layer and the metal layer can be suppressed when the high-frequency circuit laminate is wound into a roll shape. In addition, the surface roughness Ra of the metal layer refers to the "arithmetic mean roughness" measured in accordance with JIS B0601-2001.

金屬層的厚度的下限較佳為3 μm,更佳為5 μm,特佳為7 μm。金屬層的厚度的上限較佳為50 μm,更佳為40 μm,特佳為35 μm。The lower limit of the thickness of the metal layer is preferably 3 μm, more preferably 5 μm, and particularly preferably 7 μm. The upper limit of the thickness of the metal layer is preferably 50 μm, more preferably 40 μm, and particularly preferably 35 μm.

於使用金屬箔作為金屬層的情況下,若金屬箔的表面粗糙度Ra為所述範圍,則可直接使用經減薄化而成者,但亦可使用對其表面進行物理性或化學性處理而將表面粗糙度Ra控制為所述範圍者。作為控制金屬箔的表面粗糙度的方法,存在對金屬箔進行的蝕刻處理(酸處理等)、雷射處理、電解鍍敷、無電解鍍敷、濺鍍處理、噴砂等方法,但並不限定於該些。In the case of using metal foil as the metal layer, if the surface roughness Ra of the metal foil is in the above range, it can be used as it is thinned, but the surface can also be treated physically or chemically. On the other hand, the surface roughness Ra is controlled within the above-mentioned range. As a method of controlling the surface roughness of the metal foil, there are methods such as etching treatment (acid treatment, etc.), laser treatment, electrolytic plating, electroless plating, sputtering treatment, sandblasting, etc., but are not limited For that.

1.4.高頻電路用積層體的製造方法 本實施形態的高頻電路用積層體的製造方法只要可使樹脂層與膜層相接並積層,則其方法並無特別限定。所謂「樹脂層與膜層相接」並不限於樹脂層的其中一面以整個面與膜層相接的情況,包含樹脂層的其中一面的至少一部分與膜層相接的情況。1.4. Manufacturing method of laminated body for high frequency circuit The method of manufacturing the laminate for high-frequency circuits of the present embodiment is not particularly limited as long as the resin layer and the film layer can be laminated in contact with each other. The so-called "resin layer and film layer in contact" is not limited to the case where one surface of the resin layer is in contact with the film layer on the entire surface, and includes the case where at least a part of one surface of the resin layer is in contact with the film layer.

以下,對本實施形態的高頻電路用積層體的較佳製造例進行說明。再者,即便為各製造例的中途階段,只要是必要的積層體,則亦可適宜地利用。Hereinafter, a preferable manufacturing example of the laminated body for high-frequency circuits of the present embodiment will be described. In addition, even if it is a halfway stage of each manufacturing example, as long as it is a necessary laminated body, it can use suitably.

<製造例A> 圖1A~圖1E是示意性地表示製造例A的各步驟中的剖面的圖。參照圖1A~圖1E來對製造例A進行說明。<Manufacturing example A> 1A to 1E are diagrams schematically showing cross-sections in each step of Manufacturing Example A. FIG. The manufacturing example A will be described with reference to FIGS. 1A to 1E.

(步驟A1) 如圖1A所示,於膜層10上塗敷樹脂層用組成物並形成B階樹脂層12,從而製作「B階樹脂層/膜層積層體」)。膜層10可使用包含PI、PEI、LCP、PEN、PS、COP、PEEK、PAEK、PPE等材質的膜。樹脂層用組成物的塗敷方法可使用公知的塗敷方法,較佳為例如使用棒塗機並調整膜厚而進行塗敷。(Step A1) As shown in FIG. 1A, the composition for a resin layer is coated on the film layer 10, and the B-stage resin layer 12 is formed, and the "B-stage resin layer/film laminated body" is produced. The film layer 10 can use a film containing PI, PEI, LCP, PEN, PS, COP, PEEK, PAEK, PPE and other materials. The coating method of the composition for a resin layer can use a well-known coating method, For example, it is preferable to use a bar coater and adjust a film thickness for coating.

較佳為於如此般對膜層10塗敷樹脂層用組成物後,使用烘箱等公知的加熱機構來形成半硬化狀態的B階樹脂層12。加熱溫度較佳為50℃~150℃,更佳為70℃~130℃。於加熱時,亦可以例如50℃~100℃與100℃~150℃等的多階段進行加熱。另外,加熱時間的合計較佳為未滿30分鐘,更佳為未滿20分鐘。藉由以所述範圍的溫度與時間的條件進行加熱,可製作膜厚均勻性高的B階樹脂層12。After applying the resin layer composition to the film layer 10 in this way, it is preferable to use a known heating mechanism such as an oven to form the B-stage resin layer 12 in a semi-cured state. The heating temperature is preferably 50°C to 150°C, more preferably 70°C to 130°C. At the time of heating, heating may be performed in multiple stages, such as 50°C to 100°C and 100°C to 150°C, for example. In addition, the total heating time is preferably less than 30 minutes, and more preferably less than 20 minutes. By heating under the conditions of the temperature and time in the above-mentioned range, the B-stage resin layer 12 with high film thickness uniformity can be produced.

於表面露出的B階樹脂層12的表面粗糙度Ra較佳為1 nm~100 nm,更佳為10 nm~50 nm。若B階樹脂層12的表面粗糙度Ra為所述範圍,則於製造高頻電路用積層體的情況下,可進一步提高樹脂層與膜層或樹脂層與金屬層的密接性。再者,本申請案發明中的B階樹脂層的表面粗糙度Ra是指依據JIS B0601-2001而測定的「算術平均粗糙度」。The surface roughness Ra of the B-stage resin layer 12 exposed on the surface is preferably 1 nm to 100 nm, more preferably 10 nm to 50 nm. If the surface roughness Ra of the B-stage resin layer 12 is in the above-mentioned range, in the case of manufacturing a laminate for a high-frequency circuit, the adhesion between the resin layer and the film layer or the resin layer and the metal layer can be further improved. In addition, the surface roughness Ra of the B-stage resin layer in the invention of this application refers to the "arithmetic mean roughness" measured in accordance with JIS B0601-2001.

關於B階樹脂層12的彈性係數,於1 Hz的測定條件下,50℃以上且未滿80℃下的彈性係數(MPa)的最大值較佳為1 MPa以上,更佳為3 MPa以上。另外,80℃以上且200℃以下的溫度範圍內的彈性係數(MPa)的最小值較佳為20 MPa以下,更佳為15 MPa以下。若B階樹脂層的彈性係數為各溫度範圍,則於對高頻電路用積層體進行熱壓製來製造的情況下,可抑制配線部與非配線部的凹凸,並可抑制傳輸損失。Regarding the coefficient of elasticity of the B-stage resin layer 12, under the measurement conditions of 1 Hz, the maximum value of the coefficient of elasticity (MPa) at 50° C. or more and less than 80° C. is preferably 1 MPa or more, more preferably 3 MPa or more. In addition, the minimum value of the coefficient of elasticity (MPa) in the temperature range of 80° C. or higher and 200° C. or lower is preferably 20 MPa or lower, and more preferably 15 MPa or lower. If the coefficient of elasticity of the B-stage resin layer is in each temperature range, when the laminate for high-frequency circuits is manufactured by hot pressing, the unevenness of the wiring portion and the non-wiring portion can be suppressed, and the transmission loss can be suppressed.

(步驟A2) 如圖1B所示,將步驟A1中製作的「B階樹脂層/膜層積層體」的露出的樹脂層面13與金屬層14貼合來製作「金屬層/B階樹脂層/膜層積層體」。與樹脂層面13貼合的金屬層14的表面粗糙度Ra較佳為10 nm~300 nm,更佳為30 nm~200 nm,特佳為30 nm~100 nm。(Step A2) As shown in Figure 1B, the exposed resin layer 13 of the "B-stage resin layer/film laminate" produced in step A1 is bonded to the metal layer 14 to produce a "metal layer/B-stage resin layer/film laminate" ". The surface roughness Ra of the metal layer 14 bonded to the resin layer 13 is preferably 10 nm to 300 nm, more preferably 30 nm to 200 nm, and particularly preferably 30 nm to 100 nm.

較佳為於貼合時將「B階樹脂層/膜層積層體」的樹脂層面13與金屬層14重疊後,進而使用經加熱的輥(本說明書中亦稱為「熱輥」)等進行加熱壓接。加熱壓接時的線負荷較佳為1 kN/m~19 kN/m,更佳為5 kN/m~18 kN/m。加熱壓接的溫度較佳為50℃~200℃,更佳為50℃~150℃,特佳為70℃~130℃。It is preferable to superimpose the resin layer 13 and the metal layer 14 of the "B-stage resin layer/film laminate" at the time of lamination, and then use a heated roller (also referred to as a "hot roller" in this specification), etc. Heating and crimping. The wire load during heating and crimping is preferably 1 kN/m to 19 kN/m, more preferably 5 kN/m to 18 kN/m. The temperature of the heating and compression bonding is preferably 50°C to 200°C, more preferably 50°C to 150°C, particularly preferably 70°C to 130°C.

另外,於步驟A2中,亦可藉由使貼合後不久的「金屬層/B階樹脂層/膜層積層體」繼續與經加熱的輥接觸或者在加熱爐中通過來進行退火處理。此種退火處理只要為樹脂的熔點以上的溫度即可,例如較佳為100℃~250℃,更佳為110℃~230℃。加熱的時間並無特別限定,較佳為5秒鐘~600秒鐘,更佳為10秒鐘~300秒鐘。使用熱輥並以例如5秒~600秒左右的短時間進行退火處理,藉此可製作膜厚均勻性高的B階樹脂層。再者,所謂所述『使貼合後不久的「金屬層/B階樹脂層/膜層積層體」繼續』進行處理,是於進行積層體的貼合的生產線中,不將進行了貼合的積層體自生產線取出而於貼合處理後繼續在線進行處理的步驟。In addition, in step A2, the "metal layer/B-stage resin layer/film laminate" shortly after bonding may be continuously contacted with a heated roll or passed through a heating furnace for annealing treatment. Such annealing treatment may be at a temperature equal to or higher than the melting point of the resin. For example, it is preferably 100°C to 250°C, and more preferably 110°C to 230°C. The heating time is not particularly limited, but is preferably 5 seconds to 600 seconds, more preferably 10 seconds to 300 seconds. By using a hot roll and performing annealing treatment in a short time of, for example, about 5 seconds to 600 seconds, a B-stage resin layer with high film thickness uniformity can be produced. In addition, the so-called "continue processing the "metal layer/B-stage resin layer/film laminate" immediately after bonding" means that in the production line where the laminate is bonded, the bonding is not performed. The layered body is taken out from the production line and continues to be processed online after the lamination process.

(步驟A3) 如圖1C所示,於步驟A2中製作的「金屬層/B階樹脂層/膜層積層體」的膜層10上,與步驟A1同樣地形成B階樹脂層16。B階樹脂層16的材質可與B階樹脂層12的材質相同,亦可不同。(Step A3) As shown in FIG. 1C, the B-stage resin layer 16 is formed on the film layer 10 of the "metal layer/B-stage resin layer/film laminate" produced in step A2 in the same manner as in step A1. The material of the B-stage resin layer 16 may be the same as or different from the material of the B-stage resin layer 12.

(步驟A4) 如圖1D所示,在步驟A3中製作的「金屬層/B階樹脂層/膜層/B階樹脂層」的B階樹脂層16上,與步驟A2同樣地貼合金屬層18,製作「金屬層/B階樹脂層/膜層/B階樹脂層/金屬層積層體」。於步驟A4中,較佳為進行與步驟A2同樣的壓接步驟。(Step A4) As shown in FIG. 1D, on the B-stage resin layer 16 of "metal layer/B-stage resin layer/film layer/B-stage resin layer" produced in step A3, the metal layer 18 is bonded in the same manner as in step A2 to produce " Metal layer/B-stage resin layer/film layer/B-stage resin layer/metal laminate". In step A4, it is preferable to perform the same crimping step as step A2.

(步驟A5) 如圖1E所示,藉由使B階樹脂層12及B階樹脂層16進行硬化而分別製成C階樹脂層20及C階樹脂層22,可獲得高頻電路用積層體100。為了使B階樹脂層12及B階樹脂層16進行硬化,較佳為對於步驟A4中所獲得的積層體,使用烘箱等公知的加熱機構並於50℃~200℃下進行加熱,更佳為於100℃~200℃下進行加熱。於加熱時,亦可以例如50℃~100℃與100℃~200℃等的多階段進行加熱。另外,加熱時間較佳為未滿5小時,更佳為未滿3小時。藉由以所述範圍的溫度與時間的條件進行加熱,可製作使B階樹脂層硬化而成的、膜厚均勻性高的C階樹脂層。(Step A5) As shown in FIG. 1E, by curing the B-stage resin layer 12 and the B-stage resin layer 16 to form a C-stage resin layer 20 and a C-stage resin layer 22, respectively, a laminate 100 for high-frequency circuits can be obtained. In order to harden the B-stage resin layer 12 and the B-stage resin layer 16, it is preferable to use a known heating mechanism such as an oven to heat the laminate obtained in step A4 at 50°C to 200°C, more preferably Heat at 100°C to 200°C. During heating, heating may be performed in multiple stages, such as 50°C to 100°C and 100°C to 200°C. In addition, the heating time is preferably less than 5 hours, more preferably less than 3 hours. By heating under the conditions of temperature and time in the above-mentioned range, a C-stage resin layer with high film thickness uniformity can be produced by hardening the B-stage resin layer.

<製造例B> 圖2A~圖2C是示意性地表示製造例B的各步驟中的剖面的圖。參照圖2A~圖2C來對製造例B進行說明。<Manufacturing Example B> 2A to 2C are diagrams schematically showing cross-sections in each step of Manufacturing Example B. The manufacturing example B will be described with reference to FIGS. 2A to 2C.

(步驟B1) 如圖2A所示,對金屬層30塗敷樹脂層用組成物並形成B階樹脂層32,從而製作「金屬層/B階樹脂層積層體」。樹脂層用組成物的塗敷方法可使用公知的塗敷方法,較佳為例如使用棒塗機並調整膜厚而進行塗敷。(Step B1) As shown in FIG. 2A, a composition for a resin layer is applied to the metal layer 30 to form a B-stage resin layer 32, thereby producing a "metal layer/B-stage resin laminated body". The coating method of the composition for a resin layer can use a well-known coating method, For example, it is preferable to use a bar coater and adjust a film thickness for coating.

較佳為於如此般對金屬層30塗敷樹脂層用組成物後,使用烘箱等公知的加熱機構來形成半硬化狀態的B階樹脂層32。加熱溫度較佳為50℃~150℃,更佳為70℃~130℃。於加熱時,亦可以例如50℃~100℃與100℃~150℃等的多階段進行加熱。另外,加熱時間的合計較佳為未滿30分鐘,更佳為未滿20分鐘。藉由以所述範圍的溫度與時間的條件進行加熱,可製作膜厚均勻性高的B階樹脂層32。It is preferable to apply the resin layer composition to the metal layer 30 in this way, and then use a known heating mechanism such as an oven to form the B-stage resin layer 32 in a semi-cured state. The heating temperature is preferably 50°C to 150°C, more preferably 70°C to 130°C. At the time of heating, heating may be performed in multiple stages, such as 50°C to 100°C and 100°C to 150°C, for example. In addition, the total heating time is preferably less than 30 minutes, and more preferably less than 20 minutes. By heating under the conditions of the temperature and time in the above-mentioned range, the B-stage resin layer 32 with high film thickness uniformity can be produced.

(步驟B2) 如圖2B所示,準備兩個步驟B1中製作的「金屬層/B階樹脂層積層體」,將「金屬層/B階樹脂層積層體」的露出的樹脂層面33分別貼合於膜層34的兩面來製作「金屬層/B階樹脂層/膜層/B階樹脂層/金屬層積層體」。於將膜層34貼合於露出的樹脂層面33的情況下,較佳為將露出的樹脂層面33與膜層34重疊後,進而使用熱輥等進行加熱壓接。另外,加熱壓接較佳為與所述步驟A2相同的條件。(Step B2) As shown in FIG. 2B, prepare the "metal layer/B-stage resin laminate" produced in two steps B1, and attach the exposed resin layer 33 of the "metal layer/B-stage resin laminate" to the film layer. 34 on both sides to produce "metal layer/B-stage resin layer/film layer/B-stage resin layer/metal laminate". When bonding the film layer 34 to the exposed resin layer layer 33, it is preferable to overlap the exposed resin layer layer 33 and the film layer 34, and then heat and pressure-bond it using a heat roller or the like. In addition, the thermal compression bonding is preferably under the same conditions as in the step A2.

另外,於步驟B2中,亦可藉由使貼合後不久的「金屬層/B階樹脂層/膜層/B階樹脂層/金屬層積層體」繼續與經加熱的輥接觸或者在加熱爐中通過來進行退火處理。退火處理較佳為與所述步驟A2相同的條件。In addition, in step B2, the "metal layer/B-stage resin layer/film layer/B-stage resin layer/metal laminated body" can also be kept in contact with a heated roller or in a heating furnace shortly after lamination. The annealing treatment is carried out in the middle pass. The annealing treatment is preferably the same conditions as the step A2.

露出的樹脂層面33的表面粗糙度Ra較佳為1 nm~100 nm,更佳為10 nm~50 nm。若B階樹脂層的表面粗糙度Ra為所述範圍,則於製造高頻電路用積層體的情況下,可進一步提高樹脂層與膜層的密接性。另外,與樹脂層面33貼合的膜層34的玻璃轉移溫度(Tg)較佳為150℃以上,更佳為160℃以上,特佳為170℃以上。The surface roughness Ra of the exposed resin layer 33 is preferably 1 nm to 100 nm, more preferably 10 nm to 50 nm. If the surface roughness Ra of the B-stage resin layer is in the above range, when manufacturing a laminate for high-frequency circuits, the adhesiveness between the resin layer and the film layer can be further improved. In addition, the glass transition temperature (Tg) of the film layer 34 bonded to the resin layer layer 33 is preferably 150° C. or higher, more preferably 160° C. or higher, and particularly preferably 170° C. or higher.

(步驟B3) 如圖2(C)所示,藉由使B階樹脂層32進行硬化而製成C階樹脂層36,可獲得高頻電路用積層體200。步驟B3中較佳為對於步驟B2中製作的「金屬層/B階樹脂層/膜層/B階樹脂層/金屬層積層體」,使用烘箱等公知的加熱機構並於50℃~200℃下進行加熱,更佳為於100℃~200℃下進行加熱。於加熱時,亦可以例如50℃~100℃與100℃~200℃等二階段進行加熱。另外,加熱時間較佳為未滿5小時,更佳為未滿3小時。藉由以所述範圍的溫度與時間的條件進行加熱,可製作使B階樹脂層32硬化而成的、膜厚均勻性高的C階樹脂層36。(Step B3) As shown in FIG. 2(C), by hardening the B-stage resin layer 32 to form the C-stage resin layer 36, a laminate 200 for high-frequency circuits can be obtained. In step B3, it is preferable that the "metal layer/B-stage resin layer/film layer/B-stage resin layer/metal laminate" produced in step B2 is heated at 50°C to 200°C using a known heating mechanism such as an oven. Heating is performed, more preferably at 100°C to 200°C. At the time of heating, it is also possible to perform heating in two stages, such as 50°C to 100°C and 100°C to 200°C. In addition, the heating time is preferably less than 5 hours, more preferably less than 3 hours. By heating under the conditions of the temperature and time in the above-mentioned range, the C-stage resin layer 36 with high film thickness uniformity can be produced by curing the B-stage resin layer 32.

2.積層體捲繞體 本實施形態的積層體捲繞體的特徵在於:是高頻電路用積層體捲繞於半徑10 mm~100 mm的卷芯而成,所述高頻電路用積層體包含由玻璃轉移溫度(Tg)為150℃以上的膜層與含有特定聚合物的樹脂層相接並積層而成的結構。2. Laminated body wound body The laminated body of this embodiment is characterized in that it is formed by winding a high-frequency circuit laminated body on a core with a radius of 10 mm to 100 mm, and the high-frequency circuit laminated body contains a glass transition temperature (Tg ) It is a structure in which a film layer above 150°C and a resin layer containing a specific polymer are in contact and laminated.

以下,參照圖式來對本實施形態的積層體捲繞體進行說明。Hereinafter, the laminated body wound body of the present embodiment will be described with reference to the drawings.

圖3是表示本實施形態的積層體捲繞體的一例的立體圖。圖4是表示可於本實施形態中使用的卷芯的一例的立體圖。如圖3所示,本實施形態的積層體捲繞體300包括卷芯40、與捲繞於卷芯40的高頻電路用積層體50。此種高頻電路用積層體一般而言為了有效地進行加工,而設為具有一定寬度的長條的片狀,並以將其捲繞於卷芯而成的積層體捲繞體的狀態加以使用或保管。Fig. 3 is a perspective view showing an example of the laminated body wound body of the present embodiment. Fig. 4 is a perspective view showing an example of a winding core that can be used in this embodiment. As shown in FIG. 3, the wound laminated body 300 of the present embodiment includes a winding core 40 and a high-frequency circuit laminated body 50 wound around the winding core 40. Such a laminate for high-frequency circuits is generally in the form of a long sheet with a certain width in order to be processed efficiently, and it is wound in the state of a laminate wound body formed by winding it on a core. Use or keep.

本實施形態的積層體捲繞體較佳為使用大致圓柱狀的卷芯。該情況下,減小圓柱狀的卷芯的半徑,盡可能減小曲率半徑,藉此即便是將相同長度的高頻電路用積層體捲繞而成的卷,亦可實現更小型化,並可提高生產性。此外,於曲率半徑小的積層體捲繞體中存在容易於高頻電路用積層體殘留捲曲皺痕、難以進行高頻電路用積層體的加工的傾向。因此,為了抑制殘留於高頻電路用積層體的捲曲皺痕而難以減小積層體捲繞體的曲率半徑。The laminated body wound body of this embodiment preferably uses a substantially cylindrical core. In this case, by reducing the radius of the cylindrical winding core and reducing the radius of curvature as much as possible, even a roll formed by winding a laminated body for a high-frequency circuit of the same length can be more compact, and Can improve productivity. In addition, in the laminated body wound body with a small radius of curvature, curling wrinkles tend to remain in the laminated body for high-frequency circuits, and it tends to be difficult to process the laminated body for high-frequency circuits. Therefore, it is difficult to reduce the radius of curvature of the laminated body wound body in order to suppress the curl wrinkles remaining in the laminated body for high-frequency circuits.

另外,先前的高頻電路用積層體中為了提高樹脂層與膜層的密接性而介隔存在接著層。因此,於對將先前的高頻電路用積層體捲繞於卷芯而成的積層體捲繞體進行保管的情況下,接著層因外部因素而發生變質並硬化,因此於拉出時容易產生捲曲皺痕。In addition, in the conventional laminate for high-frequency circuits, an adhesive layer is interposed in order to improve the adhesion between the resin layer and the film layer. Therefore, in the case of storing the laminated body wound body formed by winding the conventional laminated body for high-frequency circuits on the core, the adhesive layer is altered and hardened due to external factors, so it is likely to be produced when pulled out. Curly wrinkles.

然而,本實施形態的積層體捲繞體中,藉由使用如下的高頻電路用積層體,可製作捲繞於半徑10 mm~100 mm的卷芯而成的小型的高頻電路用積層體捲繞體,所述高頻電路用積層體包含由玻璃轉移溫度(Tg)為150℃以上的膜層與含有特定聚合物的樹脂層相接並積層而成的結構。However, in the laminated body wound body of this embodiment, by using the following laminated body for high-frequency circuits, it is possible to produce a compact laminated body for high-frequency circuits wound on a core with a radius of 10 mm to 100 mm A jelly-rolled body including a structure in which a film layer having a glass transition temperature (Tg) of 150° C. or higher and a resin layer containing a specific polymer are laminated in contact with each other.

卷芯40與高頻電路用積層體50可使用接合構件而接合,亦可不進行接合。例如如圖4所示,於卷芯40具有階差部42的情況下,於高頻電路用積層體50的端部經由接合構件而接合於卷芯40的階差部42後,使卷芯40旋轉並捲取高頻電路用積層體50,從而可製作積層體捲繞體300。再者,形成有階差部的卷芯例如可使用實用新型註冊第3147706號公報中所記載的卷芯等。The winding core 40 and the laminated body 50 for a high-frequency circuit may be joined using a joining member, and may not be joined. For example, as shown in FIG. 4, when the winding core 40 has a stepped portion 42, the end of the high-frequency circuit laminate 50 is joined to the stepped portion 42 of the winding core 40 via a joining member, and then the winding core 40 rotates and winds up the laminated body 50 for high frequency circuits, so that the laminated body wound body 300 can be manufactured. In addition, as the winding core in which the stepped portion is formed, for example, the winding core described in Utility Model Registration No. 3147706, etc. can be used.

再者,接合構件的種類並無特別限定,可使用各種接合構件,例如可使用接著劑、黏著劑、及雙面膠帶等。該些可僅使用一種,亦可併用兩種以上。另外,該接合構件可將高頻電路用積層體50的寬度方向的全長接合於卷芯40,亦可僅接合一部分。In addition, the type of the joining member is not particularly limited, and various joining members can be used. For example, an adhesive, an adhesive, and a double-sided tape can be used. Only one kind of these may be used, or two or more kinds may be used in combination. In addition, this joining member may join the whole length of the width direction of the laminated body 50 for high frequency circuits to the winding core 40, and may join only a part.

卷芯40的半徑為10 mm~100 mm,但較佳為10 mm~50 mm,更佳為15 mm~40 mm。若卷芯40的半徑為所述範圍,則自積層體捲繞體300拉出高頻電路用積層體50而進行加工時,可有效地抑制形成有由高頻電路用積層體50與卷芯40的接合部(捲繞開始部)的階差引起的圖5所示的壓痕51。再者,此種壓痕51成為於高頻電路用積層體加工時良率下降的主要原因,因此是為了提高生產性而應盡可能抑制的捲曲皺痕之一。The radius of the core 40 is 10 mm to 100 mm, but is preferably 10 mm to 50 mm, and more preferably 15 mm to 40 mm. If the radius of the winding core 40 is within the above range, when the high-frequency circuit laminate 50 is pulled out from the laminate winding body 300 and processed, the formation of the high-frequency circuit laminate 50 and the winding core can be effectively suppressed. The indentation 51 shown in FIG. 5 is caused by the step difference of the junction part (winding start part) of 40. Furthermore, this type of indentation 51 becomes a main cause of a decrease in yield during processing of a laminate for high-frequency circuits, and therefore is one of curling wrinkles that should be suppressed as much as possible in order to improve productivity.

階差部42的高度較佳為50 μm~300 μm,更佳為60 μm~180 μm,特佳為70 μm~150 μm。另外,階差部42的高度特佳為高頻電路用積層體50的厚度(μm)±10 μm。若階差部42的高度為所述範圍內,則可消除卷芯40的階差部42與高頻電路用積層體50的接合部的階差,因此可更有效地抑制形成有積層體捲繞體300的壓痕。The height of the step portion 42 is preferably 50 μm to 300 μm, more preferably 60 μm to 180 μm, particularly preferably 70 μm to 150 μm. In addition, the height of the step portion 42 is particularly preferably the thickness (μm) of the laminate 50 for high-frequency circuits ±10 μm. If the height of the step portion 42 is within the above range, the step difference between the step portion 42 of the winding core 40 and the junction portion of the laminated body 50 for high-frequency circuits can be eliminated, so the formation of the laminated body can be more effectively suppressed. Indentation around body 300.

卷芯40的材質並無特別限定,可列舉紙、金屬、熱塑性樹脂等。於卷芯40的材質為紙的情況下,可藉由樹脂等對表面進行塗佈。作為金屬,可列舉:SUS、鐵、鋁等。作為熱塑性樹脂,可列舉:烯烴系樹脂(聚乙烯、聚丙烯等)、苯乙烯系樹脂(ABS樹脂、AES樹脂、AS樹脂、MBS樹脂、聚苯乙烯等)、聚氯乙烯、偏二氯乙烯系樹脂、甲基丙烯酸樹脂、聚乙烯醇、苯乙烯系嵌段共聚物樹脂、聚醯胺、聚縮醛、聚碳酸酯、改質聚苯醚、聚酯(聚對苯二甲酸丁二酯、聚對苯二甲酸乙二酯等)、氟樹脂、聚苯硫醚、聚碸、非晶聚芳酯、聚醚醯亞胺、聚醚碸、聚醚酮類、液晶聚合物、聚醯胺醯亞胺、熱塑性聚醯亞胺類、間規型聚苯乙烯等。該些可僅使用一種,亦可併用兩種以上。於卷芯40的材質為熱塑性樹脂的情況下,卷芯40及其階差部42可藉由擠出成形或切削成形來製作。The material of the core 40 is not particularly limited, and examples include paper, metal, and thermoplastic resin. When the material of the core 40 is paper, the surface can be coated with resin or the like. Examples of metals include SUS, iron, aluminum, and the like. Examples of thermoplastic resins include olefin resins (polyethylene, polypropylene, etc.), styrene resins (ABS resin, AES resin, AS resin, MBS resin, polystyrene, etc.), polyvinyl chloride, vinylidene chloride Resin, methacrylic resin, polyvinyl alcohol, styrene block copolymer resin, polyamide, polyacetal, polycarbonate, modified polyphenylene ether, polyester (polybutylene terephthalate) , Polyethylene terephthalate, etc.), fluororesin, polyphenylene sulfide, polyether, amorphous polyarylate, polyether imine, polyether ketone, polyether ketone, liquid crystal polymer, polyether Amine imines, thermoplastic polyimines, syndiotactic polystyrene, etc. Only one kind of these may be used, or two or more kinds may be used in combination. In the case where the material of the winding core 40 is a thermoplastic resin, the winding core 40 and the stepped portion 42 thereof can be manufactured by extrusion molding or cutting molding.

將所述貼合的高頻電路用積層體捲取為卷狀的方法並無特別限定,可依照高頻電路用積層體或膜的製造中所使用的方法。The method of winding the laminated body for high frequency circuits into a roll shape is not specifically limited, It can follow the method used for manufacture of the laminated body for high frequency circuits, or a film.

3.電路基板(柔性印刷基板) 可使用所述本申請案發明的高頻電路用積層體來製造FPC等電路基板。此種電路基板將本申請案發明的高頻電路用積層體設為積層結構的至少一部分,即便以高頻進行驅動,亦可減少傳輸損失。此種電路基板只要包括本申請案發明的高頻電路用積層體作為積層結構的一部分即可,可藉由公知的方法來製造,例如可應用國際公開第2012/014339號、日本專利特開2009-231770號公報等中所記載的製造製程來製造。3. Circuit board (flexible printed circuit board) The laminate for high-frequency circuits of the invention of the present application can be used to manufacture circuit boards such as FPC. In such a circuit board, the laminate for a high-frequency circuit of the invention of the present application is used as at least a part of the laminate structure, and even if it is driven at a high frequency, the transmission loss can be reduced. Such a circuit board only needs to include the laminate for high-frequency circuits of the present application as a part of the laminate structure, and it can be manufactured by a known method. For example, International Publication No. 2012/014339 and Japanese Patent Laid-Open 2009 can be applied. -231770 Bulletin, etc. described in the manufacturing process.

將本申請案發明的高頻電路用積層體進行積層、或藉由蝕刻對本申請案發明的高頻電路用積層體的金屬層進行圖案化、或穿設孔、或切斷為所需的大小等,藉此可製造電路基板。Laminating the laminate for high-frequency circuits of the invention of this application, or patterning, perforating, or cutting the metal layer of the laminate for high-frequency circuits of the invention of this application by etching, to a desired size Etc., thereby making it possible to manufacture a circuit board.

此種電路基板中不介隔存在有接著層,因此作為凸部的被覆金屬配線層的樹脂層不會成為大的階差,樹脂層表面變得平滑。因此,即便積層電路,亦可滿足高的定位精度,可積聚更多層的電路。Such a circuit board does not have an adhesive layer interposed therebetween. Therefore, the resin layer of the metal wiring layer that is the convex portion does not have a large step difference, and the surface of the resin layer becomes smooth. Therefore, even with multilayer circuits, high positioning accuracy can be satisfied, and more layers of circuits can be accumulated.

此種電路基板例如可經過以下步驟等來製造: ·步驟(a):將樹脂膜積層於電路用基板並形成樹脂層的步驟、 ·步驟(b):將樹脂層加熱·加壓而進行平坦化的步驟、 ·步驟(c):於樹脂層上進而形成電路層的步驟。Such a circuit board can be manufactured through the following steps, for example: ·Step (a): A step of laminating a resin film on a circuit board and forming a resin layer, ·Step (b): A step of heating and pressurizing the resin layer to planarize it, Step (c): A step of forming a circuit layer on the resin layer.

步驟(a)中將樹脂膜積層於電路用基板的方法並無特別限定,例如可列舉使用多段壓製機、真空壓製機、常壓層壓機、於真空下進行加熱加壓的層壓機來進行積層的方法等,較佳為使用於真空下進行加熱加壓的層壓機的方法。藉此,即便電路用基板於表面具有微細配線電路,亦可無空隙地利用樹脂埋入電路間。層壓條件並無特別限定,較佳為於壓接溫度為70℃~130℃、壓接壓力為1 kgf/cm2 ~11 kgf/cm2 、減壓或真空下進行積層。層壓可為批次式,且亦可為利用輥的連續式。The method of laminating the resin film on the circuit board in step (a) is not particularly limited. Examples include the use of a multi-stage press, a vacuum press, an atmospheric pressure laminator, and a laminator that heats and presses under vacuum. The method of lamination etc. is preferably a method using a laminator that is heated and pressurized under vacuum. Thereby, even if the circuit board has a fine wiring circuit on the surface, it is possible to fill the space between the circuits with resin without voids. The lamination conditions are not particularly limited, and the lamination is preferably performed at a crimping temperature of 70°C to 130°C, a crimping pressure of 1 kgf/cm 2 to 11 kgf/cm 2 , and reduced pressure or vacuum. The lamination may be a batch type or a continuous type using rollers.

電路用基板並無特別限定,可使用玻璃環氧基板、金屬基板、聚酯基板、聚醯亞胺基板、BT樹脂基板、熱硬化型聚苯醚基板、氟樹脂基板等。電路用基板的積層有樹脂膜的面的電路表面亦可預先進行粗糙化處理。另外,電路用基板的電路層數並無限定。例如於製作毫米波雷達用印刷配線板的情況下,可根據其設計而自由地選擇2層~20層等。The circuit substrate is not particularly limited, and glass epoxy substrates, metal substrates, polyester substrates, polyimide substrates, BT resin substrates, thermosetting polyphenylene ether substrates, fluororesin substrates, etc. can be used. The circuit surface of the resin film-laminated surface of the circuit board may be roughened in advance. In addition, the number of circuit layers of the circuit board is not limited. For example, in the case of manufacturing a printed wiring board for millimeter wave radar, 2 to 20 layers can be freely selected according to the design.

於步驟(b)中,將步驟(a)中積層的樹脂膜與電路用基板加熱加壓而進行平坦化。條件並無特別限定,較佳為溫度100℃~250℃、壓力0.2 MPa~10 MPa、時間30分鐘~120分鐘的範圍,更佳為150℃~220℃。In the step (b), the resin film and the circuit board laminated in the step (a) are heated and pressurized to planarize. The conditions are not particularly limited, but the temperature ranges from 100°C to 250°C, pressure from 0.2 MPa to 10 MPa, and time ranges from 30 minutes to 120 minutes, and more preferably from 150°C to 220°C.

於步驟(c)中,於將樹脂膜與電路用基板加熱加壓而製作的樹脂層上進而形成電路層。以所述方式於樹脂層上所製作的電路層的形成方法並無特別限定,例如可藉由減成(substractive)法等蝕刻法、半加成法等來形成。In step (c), a circuit layer is further formed on the resin layer produced by heating and pressing the resin film and the circuit board. The formation method of the circuit layer produced on the resin layer in this way is not specifically limited, For example, it can form by an etching method, such as a substractive method, a semi-additive method, etc.

減成法為如下方法:於金屬層上形成與所期望的圖案形狀對應的形狀的蝕刻抗蝕劑層,藉由之後的顯影處理,利用藥液將抗蝕劑經去除的部分的金屬層溶解並去除,藉此形成所期望的電路。The subtractive method is the following method: an etching resist layer of a shape corresponding to the desired pattern shape is formed on the metal layer, and the metal layer of the removed part of the resist is dissolved by a chemical solution through the subsequent development process And removed, thereby forming the desired circuit.

半加成法為如下方法:利用無電解鍍敷法於樹脂層的表面形成金屬被膜,於金屬被膜上形成與所期望的圖案對應的形狀的鍍敷抗蝕劑層,繼而利用電解鍍敷法形成金屬層後,利用藥液等去除不需要的無電解鍍敷層,從而形成所期望的電路層。The semi-additive method is a method in which a metal film is formed on the surface of the resin layer by electroless plating, a plating resist layer having a shape corresponding to a desired pattern is formed on the metal film, and then an electrolytic plating method is used After the metal layer is formed, the unnecessary electroless plating layer is removed with a chemical solution or the like to form a desired circuit layer.

另外,於樹脂層中視需要亦可形成通孔等孔。孔的形成方法並無限定,可應用數值控制(numerical control,NC)鑽孔、二氧化碳雷射、紫外(ultraviolet,UV)雷射、釔鋁石榴石(yttrium aluminum garnet,YAG)雷射、電漿等。In addition, if necessary, holes such as through holes may be formed in the resin layer. The hole formation method is not limited. Numerical control (NC) drilling, carbon dioxide laser, ultraviolet (UV) laser, yttrium aluminum garnet (YAG) laser, plasma can be used Wait.

4.實施例 以下,基於實施例對本發明進行具體說明,但本發明並不限定於該些實施例。實施例、比較例中的「份」及「%」只要無特別說明,則為質量基準。4. Example Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to these examples. The "parts" and "%" in the examples and comparative examples are quality standards unless otherwise specified.

4.1.聚合物的合成 <合成例1> 於具備攪拌裝置的四口可分離式燒瓶中量入1,1-雙(4-羥基苯基)-3,3,5-三甲基環己烷(BisTMC)(18.6 g、60.0 mmol)、4,6-二氯嘧啶(Pym)(8.9 g、60.0 mmol)、及碳酸鉀(11.1 g、81.0 mmol),加入N-甲基-2-吡咯啶酮(64 g),於氮氣環境下以130℃反應6小時。反應結束後,加入N-甲基-2-吡咯啶酮(368 g),藉由過濾而去除鹽後,將該溶液投入至甲醇(9.1 kg)中。將析出的固體過濾分離,利用少量的甲醇進行清洗,再次進行過濾分離並回收,然後使用真空乾燥機,於減壓下以120℃乾燥12小時,從而獲得具有由下述式(P-1)所表示的結構單元的聚合物P-1(產量:20.5 g、產率:90%、重量平均分子量(Mw):32,000、玻璃轉移溫度(Tg):206℃)。4.1. Synthesis of polymers <Synthesis example 1> Measure 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane (BisTMC) (18.6 g, 60.0 mmol) into a four-neck separable flask equipped with a stirring device, 4,6-Dichloropyrimidine (Pym) (8.9 g, 60.0 mmol), and potassium carbonate (11.1 g, 81.0 mmol), add N-methyl-2-pyrrolidone (64 g), React at 130°C for 6 hours. After the reaction was completed, N-methyl-2-pyrrolidone (368 g) was added, and after removing the salt by filtration, the solution was poured into methanol (9.1 kg). The precipitated solid was separated by filtration, washed with a small amount of methanol, separated by filtration again and recovered, and then dried with a vacuum dryer at 120°C under reduced pressure for 12 hours to obtain the following formula (P-1) The polymer P-1 of the structural unit represented (yield: 20.5 g, yield: 90%, weight average molecular weight (Mw): 32,000, glass transition temperature (Tg): 206° C.).

[化13]

Figure 02_image026
[化13]
Figure 02_image026

再者,玻璃轉移溫度(Tg)設為使用動態黏彈性測定裝置(精工儀器(Seiko Instruments)公司製造、「DMS7100」),以頻率1 Hz、昇溫速度10℃/min進行測定而損耗正切變得極大的溫度。損耗正切設為儲存彈性係數除以損失彈性係數而得的值。In addition, the glass transition temperature (Tg) was measured using a dynamic viscoelasticity measuring device (manufactured by Seiko Instruments, "DMS7100") at a frequency of 1 Hz and a heating rate of 10°C/min, and the loss tangent became Great temperature. The loss tangent is set to a value obtained by dividing the storage elastic coefficient by the loss elastic coefficient.

另外,重量平均分子量(Mw)是使用凝膠滲透層析儀(gel permeation chromatograph,GPC)裝置(東曹公司的「HLC-8320型」),以下述條件進行測定。 管柱:連結東曹公司的「TSK凝膠(TSKgel)α-M」與東曹公司的「TSK凝膠保護柱(TSKgel guardcolumn)α」而成的管柱 展開溶媒:N-甲基-2-吡咯啶酮 管柱溫度:40℃ 流速:1.0 mL/min 試樣濃度:0.75質量% 試樣注入量:50 μL 檢測器:示差折射計 標準物質:單分散聚苯乙烯In addition, the weight average molecular weight (Mw) was measured under the following conditions using a gel permeation chromatograph (GPC) device (“HLC-8320 type” of Tosoh Corporation). Column: A column connecting Tosoh's "TSK gel (TSKgel) α-M" and Tosoh's "TSK gel guard column (TSKgel guardcolumn) α" Developing solvent: N-methyl-2-pyrrolidone Column temperature: 40℃ Flow rate: 1.0 mL/min Sample concentration: 0.75% by mass Sample injection volume: 50 μL Detector: Differential refractometer Standard material: monodisperse polystyrene

<合成例2> 於具備攪拌裝置的四口可分離式燒瓶中量入1,1-雙(4-羥基苯基)-3,3,5-三甲基環己烷(BisTMC)(10.7 g、34.5 mmol)、3,6-二氯噠嗪(Pyd)(5.1 g、34.2 mmol)、及碳酸鉀(6.5 g、47.0 mmol),加入N-甲基-2-吡咯啶酮(36 g),於氮氣環境下以145℃反應9小時。反應結束後,加入N-甲基-2-吡咯啶酮(150 g)進行稀釋,藉由過濾而去除鹽後,將該溶液投入至甲醇(3 kg)中。將析出的固體過濾分離,利用少量的甲醇進行清洗,再次進行過濾分離並回收,然後以與合成例1相同的條件進行乾燥,從而獲得具有由下述式(P-2)所表示的結構單元的聚合物P-2(產量7.6 g、產率48%、重量平均分子量(Mw):30,000、玻璃轉移溫度(Tg):232℃)。再者,重量平均分子量及玻璃轉移溫度是與合成例1同樣地進行測定。<Synthesis example 2> Measure 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane (BisTMC) (10.7 g, 34.5 mmol) into a four-neck separable flask equipped with a stirring device, 3,6-Dichloropyridazine (Pyd) (5.1 g, 34.2 mmol), and potassium carbonate (6.5 g, 47.0 mmol), add N-methyl-2-pyrrolidone (36 g), under nitrogen React at 145°C for 9 hours. After the completion of the reaction, N-methyl-2-pyrrolidone (150 g) was added for dilution, and after the salt was removed by filtration, the solution was poured into methanol (3 kg). The precipitated solid was separated by filtration, washed with a small amount of methanol, separated again by filtration and recovered, and then dried under the same conditions as in Synthesis Example 1, thereby obtaining a structural unit represented by the following formula (P-2) The polymer P-2 (yield 7.6 g, yield 48%, weight average molecular weight (Mw): 30,000, glass transition temperature (Tg): 232°C). In addition, the weight average molecular weight and the glass transition temperature were measured in the same manner as in Synthesis Example 1.

[化14]

Figure 02_image028
[化14]
Figure 02_image028

<合成例3> 於具備攪拌裝置的四口可分離式燒瓶中量入1,1-雙(4-羥基苯基)-3,3,5-三甲基環己烷(BisTMC)(18.6 g、60.0 mmol)、4,6-二氯-2-苯基嘧啶(PhPym)(13.7 g、61.1 mmol)、及碳酸鉀(11.4 g、82.5 mmol),加入N-甲基-2-吡咯啶酮(75 g),於氮氣環境下以130℃反應6小時。反應結束後,加入N-甲基-2-吡咯啶酮(368 g)進行稀釋,藉由過濾而去除鹽後,將該溶液投入至甲醇(9.1 kg)中。將析出的固體過濾分離,利用少量的甲醇進行清洗,再次進行過濾分離並回收,然後以與合成例1相同的條件進行乾燥,從而獲得具有由下述式(P-3)所表示的結構單元的聚合物P-3(產量20.5 g、產率90%、重量平均分子量(Mw):187,000、玻璃轉移溫度(Tg):223℃)。再者,重量平均分子量及玻璃轉移溫度是與合成例1同樣地進行測定。<Synthesis example 3> Measure 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane (BisTMC) (18.6 g, 60.0 mmol) into a four-neck separable flask equipped with a stirring device, 4,6-Dichloro-2-phenylpyrimidine (PhPym) (13.7 g, 61.1 mmol) and potassium carbonate (11.4 g, 82.5 mmol), add N-methyl-2-pyrrolidone (75 g), The reaction was carried out at 130°C for 6 hours under a nitrogen atmosphere. After the reaction was completed, N-methyl-2-pyrrolidone (368 g) was added for dilution, and the salt was removed by filtration, and the solution was poured into methanol (9.1 kg). The precipitated solid was separated by filtration, washed with a small amount of methanol, separated again by filtration and recovered, and then dried under the same conditions as in Synthesis Example 1, thereby obtaining a structural unit represented by the following formula (P-3) Polymer P-3 (yield 20.5 g, yield 90%, weight average molecular weight (Mw): 187,000, glass transition temperature (Tg): 223°C). In addition, the weight average molecular weight and the glass transition temperature were measured in the same manner as in Synthesis Example 1.

[化15]

Figure 02_image030
[化15]
Figure 02_image030

<合成例4> 於具備攪拌裝置的四口可分離式燒瓶中量入1,1-雙(4-羥基苯基)-3,3,5-三甲基環己烷(BisTMC)(12.4 g、40.0 mmol)、2,2-雙(4-羥基苯基)-丙烷(BisA)(2.3 g、10.0 mmol)、1,1-雙(4-羥基苯基)-壬烷(BisP-DED)(3.3 g、10.0 mmol)、4,6-二氯-2-苯基嘧啶(PhPym)(13.7 g、61.1 mmol)、及碳酸鉀(11.4 g、82.5 mmol),加入N-甲基-2-吡咯啶酮(75 g),於氮氣環境下以130℃反應6小時。反應結束後,加入N-甲基-2-吡咯啶酮(368 g)進行稀釋,藉由過濾而去除鹽後,將該溶液投入至甲醇(9.1 kg)中。將析出的固體過濾分離,利用少量的甲醇進行清洗,再次進行過濾分離並回收,然後以與合成例1相同的條件進行乾燥,從而獲得具有由下述式(P-4)所表示的結構單元的聚合物P-4(產量23.5 g、產率87%、重量平均分子量(Mw):165,000、玻璃轉移溫度(Tg):196℃)。再者,重量平均分子量及玻璃轉移溫度是與合成例1同樣地進行測定。<Synthesis example 4> Measure 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane (BisTMC) (12.4 g, 40.0 mmol) into a four-neck separable flask equipped with a stirring device, 2,2-bis(4-hydroxyphenyl)-propane (BisA) (2.3 g, 10.0 mmol), 1,1-bis(4-hydroxyphenyl)-nonane (BisP-DED) (3.3 g, 10.0 mmol), 4,6-dichloro-2-phenylpyrimidine (PhPym) (13.7 g, 61.1 mmol), and potassium carbonate (11.4 g, 82.5 mmol), add N-methyl-2-pyrrolidone (75 g), react at 130°C for 6 hours in a nitrogen environment. After the reaction was completed, N-methyl-2-pyrrolidone (368 g) was added for dilution, and the salt was removed by filtration, and the solution was poured into methanol (9.1 kg). The precipitated solid was separated by filtration, washed with a small amount of methanol, separated again by filtration and recovered, and then dried under the same conditions as in Synthesis Example 1, thereby obtaining a structural unit represented by the following formula (P-4) The polymer P-4 (yield 23.5 g, yield 87%, weight average molecular weight (Mw): 165,000, glass transition temperature (Tg): 196°C). In addition, the weight average molecular weight and the glass transition temperature were measured in the same manner as in Synthesis Example 1.

[化16]

Figure 02_image032
[化16]
Figure 02_image032

<合成例5> 於具備攪拌裝置的四口可分離式燒瓶中量入1,1-雙(4-羥基苯基)-3,3,5-三甲基環己烷(BisTMC)(12.4 g、40.0 mmol)、4,4'-(1,3-二甲基亞丁基)雙酚(BisP-MIBK)(2.7 g、10.0 mmol)、1,1-雙(4-羥基苯基)-壬烷(BisP-DED)(3.3 g、10.0 mmol)、4,6-二氯-2-苯基嘧啶(PhPym)(13.7 g、61.1 mmol)、及碳酸鉀(11.4 g、82.5 mmol),加入N-甲基-2-吡咯啶酮(75 g),於氮氣環境下以130℃反應6小時。反應結束後,加入N-甲基-2-吡咯啶酮(368 g)進行稀釋,藉由過濾而去除鹽後,將該溶液投入至甲醇(9.1 kg)中。將析出的固體過濾分離,利用少量的甲醇進行清洗,再次進行過濾分離並回收,然後以與合成例1相同的條件進行乾燥,從而獲得具有由下述式(P-5)所表示的結構單元的聚合物P-5(產量23.8 g、產率88%、重量平均分子量(Mw):157,000、玻璃轉移溫度(Tg):190℃)。再者,重量平均分子量及玻璃轉移溫度是與合成例1同樣地進行測定。<Synthesis example 5> Measure 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane (BisTMC) (12.4 g, 40.0 mmol) into a four-neck separable flask equipped with a stirring device, 4,4'-(1,3-dimethylbutylene) bisphenol (BisP-MIBK) (2.7 g, 10.0 mmol), 1,1-bis(4-hydroxyphenyl)-nonane (BisP-DED ) (3.3 g, 10.0 mmol), 4,6-dichloro-2-phenylpyrimidine (PhPym) (13.7 g, 61.1 mmol), and potassium carbonate (11.4 g, 82.5 mmol), add N-methyl-2 -Pyrrolidone (75 g), reacted at 130°C for 6 hours in a nitrogen atmosphere. After the reaction was completed, N-methyl-2-pyrrolidone (368 g) was added for dilution, and the salt was removed by filtration, and the solution was poured into methanol (9.1 kg). The precipitated solid was separated by filtration, washed with a small amount of methanol, separated again by filtration and recovered, and then dried under the same conditions as in Synthesis Example 1, thereby obtaining a structural unit represented by the following formula (P-5) The polymer P-5 (yield 23.8 g, yield 88%, weight average molecular weight (Mw): 157,000, glass transition temperature (Tg): 190°C). In addition, the weight average molecular weight and the glass transition temperature were measured in the same manner as in Synthesis Example 1.

[化17]

Figure 02_image034
[化17]
Figure 02_image034

4.2.實施例1 4.2.1.B階樹脂層/剝離層積層體的製作 將50份的聚合物P-1、50份的作為硬化性化合物的2,2'-雙(4-氰氧苯基)丙烷(東京化成工業公司製造)、5份的作為硬化助劑的1-苄基-2-甲基咪唑(三菱化學公司製造、製品名「BMI 12」)、及160份的環戊酮混合來製備樹脂層用組成物。4.2. Example 1 4.2.1. Production of B-stage resin layer/peel-laminated laminate 50 parts of polymer P-1, 50 parts of 2,2'-bis(4-cyanooxyphenyl)propane (manufactured by Tokyo Chemical Industry Co., Ltd.) as a curable compound, and 5 parts of 1 as a curing aid -Benzyl-2-methylimidazole (manufactured by Mitsubishi Chemical Corporation, product name "BMI 12") and 160 parts of cyclopentanone were mixed to prepare a resin layer composition.

以硬化後的膜厚成為25 μm的方式,使用棒塗機將所述製備的樹脂層用組成物塗敷於作為剝離層的厚度100 μm的PET膜(帝人膜溶液公司製造、帝人特多龍膜(Teijin Tetoron Film)G2)上,使用烘箱於70℃下加熱10分鐘後,進而於130℃下加熱10分鐘,從而獲得於PET膜上積層有B階樹脂層的「B階樹脂層/剝離層積層體」。The resin layer composition prepared as described above was applied to a PET film (manufactured by Teijin Membrane Solution Co., Ltd., Teijin Tetoron) as a peeling layer using a bar coater so that the thickness of the cured film became 25 μm. The film (Teijin Tetoron Film) G2) was heated at 70°C for 10 minutes in an oven, and then heated at 130°C for 10 minutes to obtain a "B-stage resin layer/peeling" with a B-stage resin layer laminated on the PET film. Layered layered body".

<表面粗糙度Ra> 使用白色干涉顯微裝置(翟柯(ZYGO)公司製造的新視野(New View)5032)測定所述獲得的「B階樹脂層/剝離層積層體」的樹脂層的表面,將依據JIS B0601-2001對10 μm×10 μm的範圍算出的「算術平均粗糙度」設為表面粗糙度Ra。將其結果示於表1中。<Surface roughness Ra> Using a white interference microscope (New View 5032 manufactured by ZYGO) to measure the surface of the resin layer of the "B-stage resin layer/release laminate" obtained as described above, it will be based on JIS B0601- The "arithmetic mean roughness" calculated in 2001 for the range of 10 μm×10 μm is defined as the surface roughness Ra. The results are shown in Table 1.

<樹脂層的50℃~200℃的彈性係數測定> 自所述獲得的「B階樹脂層/剝離層積層體」將剝離層(PET膜)剝離,切出試驗片(寬3 mm×長2 cm),利用DMS試驗器(精工儀器(Seiko Instruments)公司製造),以1 Hz、10℃/min的測定條件測定50℃以上且未滿80℃的溫度範圍下的彈性係數(MPa)的最大值及80℃以上且200℃以下的溫度範圍下的彈性係數(MPa)的最小值。將其結果示於表1中。<Measuring the coefficient of elasticity of resin layer at 50℃~200℃> The peeling layer (PET film) was peeled from the "B-stage resin layer/peeling laminate" obtained as described above, a test piece (width 3 mm × length 2 cm) was cut out, and a DMS tester (Seiko Instruments) was used. Manufactured by the company), the maximum value of the coefficient of elasticity (MPa) in the temperature range of 50°C or more and less than 80°C and the maximum value of the elastic coefficient (MPa) in the temperature range of 80°C or more and 200°C or less under the measurement conditions of 1 Hz and 10°C/min The minimum value of the coefficient of elasticity (MPa). The results are shown in Table 1.

4.2.2.B階樹脂層/膜層積層體的製作 於作為膜的厚度25 μm的PI膜(東麗杜邦(Toray Dupont)公司製造,卡普頓(Kapton)EN)上,以硬化後的膜厚成為5 μm的方式使用棒塗機塗敷上述中製備的樹脂層用組成物,使用烘箱於70℃下加熱10分鐘後,進而於130℃下加熱10分鐘,從而獲得於PI膜上積層B階樹脂層而成的「B階樹脂層/膜層積層體」。4.2.2. Fabrication of B-stage resin layer/film layer laminate On a PI film with a thickness of 25 μm (manufactured by Toray Dupont, Kapton EN) as a film, apply the above-mentioned medium with a bar coater so that the cured film thickness becomes 5 μm. The prepared resin layer composition is heated at 70°C for 10 minutes in an oven, and then heated at 130°C for 10 minutes to obtain a "B-stage resin layer/film layer" formed by laminating a B-stage resin layer on the PI film Laminated body".

4.2.3.金屬層/B階樹脂層/膜層積層體的製作 將厚度18 μm的銅箔(三井金屬公司製造、型號「TQ-M4-VSP」、表面粗糙度110 nm)重疊於上述中所獲得的「B階樹脂層/膜層積層體」的露出的樹脂層上,進而利用150℃的熱輥以線負荷10 kN/m的條件進行壓製,從而製作具有銅箔/B階樹脂層/膜層的積層結構的「金屬層/B階樹脂層/膜層積層體」。再者,銅箔的表面粗糙度Ra是使用白色干涉顯微裝置(翟柯(ZYGO)公司製造的新視野(New View)5032)進行測定,將依據JIS B0601-2001對10 μm×10 μm的範圍算出的「算術平均粗糙度」設為表面粗糙度Ra。將其結果示於表1中。4.2.3. Production of metal layer/B-stage resin layer/film laminate A copper foil with a thickness of 18 μm (manufactured by Mitsui Metals Corporation, model "TQ-M4-VSP", surface roughness 110 nm) is superimposed on the exposed resin of the "B-stage resin layer/film laminate" obtained above On the layer, it was pressed with a heat roller at 150°C under a line load of 10 kN/m to produce a "metal layer/B-stage resin layer/film layer" with a laminate structure of copper foil/B-stage resin layer/film layer Laminated body". Furthermore, the surface roughness Ra of the copper foil is measured using a white interference microscopy device (New View 5032 manufactured by ZYGO), and the measurement of 10 μm×10 μm is based on JIS B0601-2001. The "arithmetic mean roughness" calculated by the range is defined as the surface roughness Ra. The results are shown in Table 1.

<膜層剝離後的表面粗糙度Ra> 自上述中所獲得的「金屬層/B階樹脂層/膜層積層體」將膜層剝離,使用白色干涉顯微裝置(翟柯(ZYGO)公司製造的新視野(New View)5032)測定露出的樹脂層的表面,將依據JIS B0601-2001對10 μm×10 μm的範圍算出的「算術平均粗糙度」設為表面粗糙度Ra。將其結果示於表1中。<Surface roughness Ra after peeling off the film> The film layer was peeled off from the "metal layer/B-stage resin layer/film laminate" obtained above, and the exposure was measured using a white interference microscope (New View 5032 manufactured by ZYGO) For the surface of the resin layer of JIS B0601-2001, the "arithmetic mean roughness" calculated in the range of 10 μm×10 μm is defined as the surface roughness Ra. The results are shown in Table 1.

4.2.4.金屬層/B階樹脂層/膜層/B階樹脂層積層體的製作 於上述中所獲得的「金屬層/B階樹脂層/膜層積層體」的膜面上,以硬化後的膜厚成為5 μm的方式使用棒塗機塗敷上述中製備的樹脂層用組成物,使用烘箱於70℃下加熱10分鐘後,進而於130℃下加熱10分鐘,於膜層上積層B階樹脂層,從而製作「金屬層/B階樹脂層/膜層/B階樹脂層積層體」。4.2.4. Production of metal layer/B-stage resin layer/film layer/B-stage resin laminate On the film surface of the "metal layer/B-stage resin layer/film laminate" obtained above, apply the resin layer composition prepared above with a bar coater so that the film thickness after curing becomes 5 μm After heating at 70°C for 10 minutes in an oven, and then heating at 130°C for 10 minutes, a B-stage resin layer is laminated on the film layer to produce "metal layer/B-stage resin layer/film layer/B-stage resin layer Laminated body".

4.2.5.金屬層/B階樹脂層/膜層/B階樹脂層/金屬層積層體的製作 將厚度18 μm的銅箔(三井金屬公司製造、型號「TQ-M4-VSP」、表面粗糙度110 nm)重疊於上述中所獲得的「金屬層/B階樹脂層/膜層/B階樹脂層積層體」的外側的B階樹脂層上,進而利用150℃的熱輥以線負荷10 kN/m的條件進行壓製,從而製作「金屬層/B階樹脂層/膜層/B階樹脂層/金屬層積層體」。4.2.5. Production of metal layer/B-stage resin layer/film layer/B-stage resin layer/metal laminate A copper foil with a thickness of 18 μm (manufactured by Mitsui Metals, model "TQ-M4-VSP", surface roughness 110 nm) is superimposed on the above-mentioned "metal layer/B-stage resin layer/film layer/B-stage resin" On the B-stage resin layer on the outer side of the laminated body, it is pressed with a heat roller at 150°C under a linear load of 10 kN/m to produce a "metal layer/B-stage resin layer/film layer/B-stage resin layer" /Metal laminate".

4.2.6.高頻電路用積層體的製作及評價 利用150℃的熱輥以線負荷10 kN/m的條件對上述中所獲得的「金屬層/B階樹脂層/膜層/B階樹脂層/金屬層積層體」進行壓製,之後使用烘箱於250℃下加熱3小時,從而製作具有於膜層的兩面積層有C階樹脂層的「銅箔(膜厚18 μm)/C階樹脂層(膜厚5 μm)/膜層(25 μm)/C階樹脂層(膜厚5 μm)/銅箔(膜厚18 μm)」的積層結構的高頻電路用積層體。再者,銅箔(金屬層)的表面粗糙度Ra是使用白色干涉顯微裝置(翟柯(ZYGO)公司製造的新視野(New View)5032)進行測定,將依據JIS B0601-2001對10 μm×10 μm的範圍算出的「算術平均粗糙度」設為表面粗糙度Ra。將其結果示於表1中。4.2.6. Production and evaluation of laminates for high-frequency circuits The "metal layer/B-stage resin layer/film layer/B-stage resin layer/metal laminate" obtained above was pressed with a heat roller at 150°C under a linear load of 10 kN/m, and then an oven was used to press Heating at 250°C for 3 hours to produce a "copper foil (film thickness: 18 μm)/C-stage resin layer (film thickness: 5 μm)/film layer (25 μm)/ A laminate for high-frequency circuits with a "C-stage resin layer (film thickness: 5 μm)/copper foil (film thickness: 18 μm)" laminated structure. In addition, the surface roughness Ra of the copper foil (metal layer) is measured using a white interference microscopy device (New View 5032 manufactured by ZYGO), which will be measured in accordance with JIS B0601-2001. The "arithmetic mean roughness" calculated in the range of ×10 μm is defined as the surface roughness Ra. The results are shown in Table 1.

<剝離強度> 自所製作的高頻電路用積層體切出試驗片(寬度1 cm×長度10 cm),使用英斯特朗(Instron)公司製造的「英斯特朗(Instron)5567」,以500 mm/min的條件朝90度方向拉伸金屬層,依據「IPC-TM-650 2.4.9」來測定剝離強度。接著,自剝離了金屬層的高頻電路用積層體進一步剝離C階樹脂層後,以與剝離所述金屬層時相同的條件朝90度方向拉伸膜層,依據「IPC-TM-650 2.4.9」測定剝離強度。將結果示於表1中。<Peel strength> A test piece (width 1 cm x length 10 cm) was cut out from the fabricated laminate for high-frequency circuits, and "Instron 5567" manufactured by Instron was used. The test piece was measured at 500 mm/ Under the condition of min, the metal layer is stretched in the direction of 90 degrees, and the peel strength is measured according to "IPC-TM-650 2.4.9". Next, after further peeling the C-stage resin layer from the laminated body for high-frequency circuits from which the metal layer was peeled off, the film layer was stretched in the direction of 90 degrees under the same conditions as when the metal layer was peeled off. According to "IPC-TM-650 2.4 .9" to measure the peel strength. The results are shown in Table 1.

4.2.7.C階樹脂特性的評價 <拉伸強度及拉伸伸長率> 以硬化後的膜厚成為20 μm的方式使用棒塗機將上述中所製備的樹脂層用組成物塗敷於金屬層上,使用烘箱於70℃下加熱10分鐘後,進而於130℃下加熱10分鐘,製作「金屬層/B階樹脂層積層體」。進而,對使用烘箱於250℃下加熱了3小時的高頻電路用積層體進行蝕刻處理而去除銅箔,藉此取出C階樹脂層,將其作為評價用樹脂膜。自所製成的樹脂膜切出JIS K 7161 7號啞鈴形試驗片,使用島津製作所公司製造的「Ez-LX」,以5 mm/min進行拉伸,測定斷裂時的應力作為拉伸強度,並測定伸長率作為拉伸伸長率。將結果示於表1中。4.2.7. Evaluation of C-stage resin characteristics <Tensile strength and tensile elongation> The resin layer composition prepared above was coated on the metal layer using a bar coater so that the film thickness after curing became 20 μm, heated at 70°C for 10 minutes in an oven, and then heated at 130°C In 10 minutes, a "metal layer/B-stage resin laminate" is produced. Furthermore, the laminate for high-frequency circuits heated at 250° C. for 3 hours in an oven was subjected to etching treatment to remove the copper foil, thereby taking out the C-stage resin layer and using it as a resin film for evaluation. The JIS K 7161 No. 7 dumbbell-shaped test piece was cut from the prepared resin film, and the "Ez-LX" manufactured by Shimadzu Corporation was used to stretch at 5 mm/min. The stress at break was measured as the tensile strength. And measure the elongation as the tensile elongation. The results are shown in Table 1.

<玻璃轉移溫度(Tg)> 自上述中所製成的樹脂膜切出試驗片(寬3 mm×長1 cm),利用DMS試驗器(精工儀器(Seiko Instruments)公司製造、型號「EXSTAR4000」)來測定玻璃轉移溫度(Tg)。將結果示於表1中。<Glass transition temperature (Tg)> A test piece (width 3 mm x length 1 cm) was cut out from the resin film prepared above, and the glass transition temperature (Tg) was measured using a DMS tester (Seiko Instruments, model "EXSTAR4000") . The results are shown in Table 1.

<彈性係數> 自上述中所製成的樹脂膜切出JIS K 7161 7號啞鈴,使用島津製作所公司製造的「Ez-LX」,依照JIS K 7161以5 mm/min進行拉伸試驗,測定拉伸彈性係數。將結果示於表1中。<Elasticity coefficient> JIS K 7161 No. 7 dumbbells were cut out from the resin film prepared above, and using "Ez-LX" manufactured by Shimadzu Corporation, a tensile test was performed at 5 mm/min in accordance with JIS K 7161, and the tensile elasticity coefficient was measured. The results are shown in Table 1.

<電特性(相對介電常數、介電損耗正切)> 自上述中所製成的樹脂膜切出試驗片(寬2.6 mm×長80 mm),使用空腔諧振器攝動法介電常數測定裝置(安捷倫科技(Agilent Technologies)公司製造、型號「PNA-L網路分析儀N5230A」、關東電子應用開發公司製造、型號「空腔諧振器10 GHz用CP531」)進行23℃、10 GHz下的相對介電常數及介電損耗正切的測定。將結果示於表1中。<Electrical characteristics (relative permittivity, dielectric loss tangent)> A test piece (width 2.6 mm×length 80 mm) was cut out from the resin film made above, and a cavity resonator perturbation method dielectric constant measurement device (manufactured by Agilent Technologies, model "PNA- L network analyzer N5230A, manufactured by Kanto Electronics Application Development Co., Ltd., model "CP531 for Cavity Resonator 10 GHz") measures the relative permittivity and dielectric loss tangent at 23°C and 10 GHz. The results are shown in Table 1.

4.2.8.積層體捲繞體的製作及評價 對於上述中製作的高頻電路用積層體,將厚度10 μm的雙面膠帶於寬度方向中央遍及長100 mm貼附於寬250 mm、卷芯半徑40 mm的厚紙製的卷芯。之後,將所製作的高頻電路用積層體接合於雙面膠帶後,以捲取張力150 N/m將高頻電路用積層體於卷芯捲為1,000層,從而製作積層體捲繞體。4.2.8. Production and evaluation of laminated body wound body For the high-frequency circuit laminate produced above, a double-sided tape with a thickness of 10 μm was applied to a thick paper core with a width of 250 mm and a core radius of 40 mm at the center in the width direction over a length of 100 mm. After that, the produced laminate for high-frequency circuits was joined to a double-sided tape, and the laminate for high-frequency circuits was wound with a winding tension of 150 N/m into 1,000 layers to produce a wound laminate.

將捲繞於上述中製作的積層體捲繞體的高頻電路用積層體於25℃下保存1個月後,自卷芯將積層體全部倒捲。之後,藉由目視來評價經倒捲的積層體的捲曲皺痕。於未確認到捲曲皺痕的情況下判斷為「良好」,於捲曲皺痕嚴重、無法供於實用的情況下判斷為「不良」。將結果示於表1中。After storing the laminated body for high-frequency circuits wound around the laminated body wound body produced above at 25° C. for one month, the entire laminated body was rewinded from the winding core. After that, the curl wrinkles of the rewinded laminate were evaluated visually. It is judged as "good" when no curl wrinkles are confirmed, and it is judged as "bad" when curl wrinkles are severe and cannot be used for practical use. The results are shown in Table 1.

4.2.9.電路基板的製作及評價 對於上述中製作的高頻電路用積層體的單面,使用感光性乾膜對銅箔進行圖案化,製作間距為150 μm且線寬分別為40 μm、45 μm、50 μm、55 μm、60 μm以及間距為750 μm且線寬分別為200 μm、220 μm、240 μm、260 μm、280 μm的銅配線圖案。繼而,將所述製作的「B階樹脂層/剝離層積層體」以B階樹脂層側與經圖案化的高頻電路用積層體的銅配線相接的方式載置於所製作的銅配線圖案的表面,於其上放置鏡板,以120℃/3.0 MPa/5分鐘的壓製條件進行加熱加壓成形後,將剝離層(PET膜)剝離並於250℃下加熱3小時,從而製作電路基板。4.2.9. Production and evaluation of circuit boards For the single side of the laminate for high-frequency circuits produced in the above, the copper foil was patterned with a photosensitive dry film, and the production pitch was 150 μm and the line width was 40 μm, 45 μm, 50 μm, 55 μm, and 60 μm. μm and copper wiring patterns with a pitch of 750 μm and a line width of 200 μm, 220 μm, 240 μm, 260 μm, and 280 μm, respectively. Then, the "B-stage resin layer/peel-off laminate" produced as described above was placed on the produced copper wiring so that the B-stage resin layer side was in contact with the copper wiring of the patterned laminate for high-frequency circuits Place a mirror plate on the surface of the pattern, heat and press at a pressing condition of 120°C/3.0 MPa/5 minutes, and then peel off the peeling layer (PET film) and heat it at 250°C for 3 hours to produce a circuit board .

<傳輸損失評價> 關於上述中製作的電路基板,使用測定探針(康思德精密科技(Cascade Microtech)公司製造,single(ACP40GSG250))、向量型網路分析儀(是德科技(Keysight technology)E8363B)而測定25℃下的頻率20 GHz的傳輸損失。於傳輸損失為-5 dB/100 mm以上的情況下,判斷為良好。<Evaluation of transmission loss> Regarding the circuit board produced in the above, the measurement probe (made by Cascade Microtech, single (ACP40GSG250)) and a vector network analyzer (Keysight technology E8363B) were used to measure at 25°C The transmission loss of the frequency 20 GHz. When the transmission loss is -5 dB/100 mm or more, it is judged to be good.

<基板階差評價> 對於上述中所製作的高頻電路用積層體的兩面,以銅箔的厚度為9 μm的方式進行兩面蝕刻,進而使用感光性乾膜對銅箔進行圖案化,製作間距為100 μm且線寬為50 μm的銅配線圖案。 其次,自上述中所製作的「金屬層/B階樹脂層/剝離層積層體」將剝離層(PET膜)剝離,以剝離而露出的樹脂層與所製作的銅配線圖案相接的方式配置於兩面,進而利用鏡板夾入,以120℃/1.1 MPa/2分鐘的壓製條件進行加熱加壓,進而於250℃下加熱3小時。 之後,使用感光性乾膜對銅箔進行圖案化,於兩面製作間距為100 μm且線寬為50 μm的銅配線圖案。 最後,自上述中所製作的「B階樹脂層/剝離層積層體」將剝離層(PET膜)剝離,以剝離面的樹脂層與所製作的銅配線圖案相接的方式配置於兩面,進而利用鏡板夾入,以120℃/1.1 MPa/2分鐘的壓製條件進行加熱加壓成形後,進而於250℃下加熱3小時,從而製作具有四層銅配線的評價用基板。<Evaluation of substrate level difference> For both sides of the laminate for high-frequency circuits produced above, the copper foil was etched on both sides so that the thickness of the copper foil was 9 μm, and then the copper foil was patterned with a photosensitive dry film to produce a pitch of 100 μm and a line width It is a 50 μm copper wiring pattern. Next, the peeling layer (PET film) is peeled from the "metal layer/B-stage resin layer/peeling laminate" made above, and the resin layer exposed by the peeling is placed in contact with the copper wiring pattern produced. It was sandwiched on both sides with mirror plates, heated and pressurized under the pressing conditions of 120°C/1.1 MPa/2 minutes, and then heated at 250°C for 3 hours. After that, the copper foil was patterned using a photosensitive dry film, and a copper wiring pattern with a pitch of 100 μm and a line width of 50 μm was produced on both sides. Finally, the peeling layer (PET film) is peeled from the "B-stage resin layer/peeling laminate" produced above, and the resin layer on the peeling surface is placed on both sides so that the copper wiring pattern is in contact with the copper wiring pattern. It was sandwiched by a mirror plate, heated and press-formed under a pressing condition of 120°C/1.1 MPa/2 minutes, and then heated at 250°C for 3 hours to produce an evaluation substrate with four layers of copper wiring.

使用掃描式電子顯微鏡觀察所製作的評價用基板的剖面形狀,於凹部與凸部的差為5%以下的情況下,判斷為可實用而良好,於超過5%的情況下,判斷為無法實用而不良。將結果示於表1中。The cross-sectional shape of the prepared evaluation substrate was observed with a scanning electron microscope. When the difference between the concave portion and the convex portion is less than 5%, it is judged to be practical and good, and when it exceeds 5%, it is judged to be impractical. And bad. The results are shown in Table 1.

4.3.實施例2~實施例6、實施例9及比較例1~比較例3 將樹脂層用組成物變更為表1的組成,且如表1般變更金屬層及膜層的種類或各種膜厚、積層條件、積層體捲繞體的製作條件,除此以外利用與實施例1相同的方法來製作高頻電路用積層體並進行評價。將結果示於表1中。4.3. Example 2 to Example 6, Example 9 and Comparative Example 1 to Comparative Example 3 The composition for the resin layer was changed to the composition in Table 1, and the type of metal layer and film layer or various film thicknesses, lamination conditions, and production conditions of the laminated body wound body were changed as shown in Table 1. Other than that, use and examples 1 In the same way, a laminate for high-frequency circuits was produced and evaluated. The results are shown in Table 1.

4.4.實施例7 於厚度18 μm的銅箔(三井金屬公司製造、型號「TQ-M4-VSP」、表面粗糙度110 nm)上,以硬化後的膜厚成為15 μm的方式,使用棒塗機塗敷表1中記載的樹脂層用組成物,使用烘箱於70℃下加熱10分鐘後,進而於130℃下加熱10分鐘,從而製作具有銅箔/B階樹脂層的積層結構的「金屬層/B階樹脂層積層體」。4.4. Example 7 Coat a copper foil with a thickness of 18 μm (manufactured by Mitsui Metals Co., Ltd., model "TQ-M4-VSP", surface roughness 110 nm) so that the cured film thickness becomes 15 μm. Table 1 The composition for the resin layer described in is heated at 70°C for 10 minutes in an oven, and then heated at 130°C for 10 minutes to produce a "metal layer/B-stage resin layer" with a copper foil/B-stage resin layer laminate structure Layered layered body".

另一方面,於作為膜的厚度75 μm的PAEK膜(索爾維(Solvay)公司製造、AvaSpire)上,以硬化後的膜厚成為15 μm的方式,使用棒塗機塗敷表1中記載的樹脂層用組成物,使用烘箱於70℃下加熱10分鐘後,進而於130℃下加熱10分鐘,獲得於PAEK膜上積層B階樹脂層而成的「B階樹脂層/膜層積層體」。將厚度18 μm的銅箔(三井金屬公司製造、型號「TQ-M4-VSP」、表面粗糙度110 nm)重疊於所獲得的「B階樹脂層/膜層積層體」的露出的樹脂層上,進而使用150℃的熱輥以線負荷10 kN/m的條件進行壓製,從而製作具有銅箔/B階樹脂層/膜層的積層結構的「金屬層/B階樹脂層/膜層積層體」。On the other hand, on the PAEK film (manufactured by Solvay, AvaSpire) with a thickness of 75 μm as a film, the film thickness after curing was 15 μm, and it was coated with a bar coater as described in Table 1. The composition for the resin layer is heated at 70°C for 10 minutes in an oven, and then heated at 130°C for 10 minutes to obtain a "B-stage resin layer/film laminated body" formed by laminating a B-stage resin layer on a PAEK film ". A copper foil with a thickness of 18 μm (manufactured by Mitsui Metals, model "TQ-M4-VSP", surface roughness 110 nm) was superimposed on the exposed resin layer of the obtained "B-stage resin layer/film laminate" Then, it was pressed with a heat roller at 150°C under a line load of 10 kN/m to produce a "metal layer/B-stage resin layer/film laminate" with a laminate structure of copper foil/B-stage resin layer/film layer ".

將上述中製作的「金屬層/B階樹脂層/膜層積層體」重疊於所製作的「金屬層/B階樹脂層積層體」的露出的樹脂層面,使用150℃的熱輥以線負荷10 kN/m的條件進行壓製,其後,使用烘箱於250℃下加熱3小時,製作具有「銅箔(膜厚18 μm)/C階樹脂層(膜厚15 μm)/膜層(膜厚75 μm)/C階樹脂層(15 μm)/銅箔(膜厚18 μm)」的積層結構的高頻電路用積層體。對於如此般製作的高頻電路用積層體,與實施例1同樣地進行評價。將結果示於表1中。Laminate the "metal layer/B-stage resin layer/film laminate" made above on the exposed resin layer of the "metal layer/B-stage resin laminate", and use a 150°C hot roller to load it linearly. Pressed under the condition of 10 kN/m, and then heated in an oven at 250°C for 3 hours to produce a copper foil (film thickness of 18 μm)/C-stage resin layer (film thickness of 15 μm)/film layer (film thickness) 75 μm)/C-stage resin layer (15 μm)/Copper foil (film thickness 18 μm)" laminated structure for high-frequency circuits. The laminated body for high frequency circuits produced in this way was evaluated in the same manner as in Example 1. The results are shown in Table 1.

4.5.實施例8、比較例4 以成為表1的組成的方式,與實施例1同樣地製備樹脂層用組成物,使用該樹脂層用組成物,與所述實施例7同樣地製作高頻電路用積層體。對於如此般製作的高頻電路用積層體,與實施例1同樣地進行評價。將結果示於表1中。4.5. Example 8, Comparative Example 4 The resin layer composition was prepared in the same manner as in Example 1 so as to have the composition of Table 1, and the resin layer composition was used to produce a high-frequency circuit laminate in the same manner as in Example 7. The laminated body for high frequency circuits produced in this way was evaluated in the same manner as in Example 1. The results are shown in Table 1.

4.6.比較例5 作為膜層,使用厚度25 μm的聚醯亞胺膜(東麗杜邦(Toray Dupont)公司製造,商品名「卡普頓(Kapton)100H」)。另外,使用用以製作接著層的馬來酸改質苯乙烯-乙烯丁烯-苯乙烯嵌段共聚物(旭化成化學公司製造、商品名「塔芙泰科(Tuftec)M1913」)代替樹脂層用組成物,除此以外,與實施例1同樣地製作高頻電路用積層體。對於如此般製作的高頻電路用積層體,與實施例1同樣地進行評價。將結果示於表1中。4.6. Comparative Example 5 As the film layer, a polyimide film having a thickness of 25 μm (manufactured by Toray Dupont, trade name "Kapton 100H") was used. In addition, maleic acid modified styrene-ethylene butene-styrene block copolymer (manufactured by Asahi Kasei Chemical Co., Ltd., trade name "Tuftec M1913") used to make the adhesive layer is used instead of the resin layer. Except for the composition, in the same manner as in Example 1, a laminate for high-frequency circuits was produced. The laminated body for high frequency circuits produced in this way was evaluated in the same manner as in Example 1. The results are shown in Table 1.

4.7.評價結果 表1中示出各實施例及各比較例中使用的樹脂層用組成物的組成、各層及高頻電路用積層體及積層體捲繞體的評價結果。4.7. Evaluation results Table 1 shows the composition of the resin layer composition used in each example and each comparative example, and the evaluation results of each layer, the laminate for high-frequency circuits, and the laminate wound.

[表1] 實施例 比較例 1 2 3 4 5 6 7 8 9 1 2 3 4 5 樹脂層用組成物 聚合物 種類 P-1 P-1 P-1 P-2 P-3 P-4 P-5 P-5 P-4 P-1 P-1 P-4 P-1 SEBS 質量份 50 35 80 50 50 50 50 50 100 10 5 10 80 100 硬化性化合物 種類 化合物A 化合物B 化合物C 化合物A 化合物A 化合物A 化合物A 化合物A - 化合物B 化合物B 化合物B 化合物C - 質量份 50 65 20 50 50 50 50 50 - 90 10 90 20 - 種類 - - - - - - - - - - 化合物D - - - 質量份 - - - - - - - - - - 85 - - - 硬化助劑 種類 硬化助劑A 硬化助劑A 硬化助劑A 硬化助劑A 硬化助劑B 硬化助劑A 硬化助劑A 硬化助劑A - 硬化助劑A 硬化助劑A 硬化助劑A 硬化助劑A - 質量份 5 2.5 5 5 0.2 5 5 5 - 5 5 5 5 - 溶媒 種類 溶媒A 溶媒B 溶媒A 溶媒A 溶媒A 溶媒A 溶媒A 溶媒A 溶媒A 溶媒A 溶媒A 溶媒A 溶媒A - 質量份 160 200 160 160 160 160 160 160 160 160 160 160 160 - B階片 構成體 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬/ 樹脂/ 膜/ 樹脂/ 金屬 金屬層 種類 電解銅箔A 電解銅箔B 電解銅箔A 壓延銅箔A 電解銅箔A 電解銅箔A 電解銅箔A 電解銅箔A 電解銅箔A 電解銅箔A 電解銅箔B 電解銅箔B 電解銅箔A - 表面粗糙度Ra(nm) 110 150 110 35 110 110 110 110 110 110 350 350 110 - 厚度(μm) 18 18 18 35 12 18 18 18 18 18 18 18 18 - B階樹脂層 表面粗糙度Ra(nm) 35 29 42 32 34 34 34 34 34 29 15 0.01 42 - 厚度(μm) 5 5 5 5 10 25 5 15 15 25 25 25 5 5 剝離層剝離後的 表面粗糙度Ra(nm) 20 18 21 19 20 22 21 21 21 18 14 37 21 - 50℃以上且未滿80℃下的彈性係數的最大值(MPa) 6 4 10 6 6 5 6 6 9 4 0.007 3 10 - 80℃以上且200℃以下的彈性係數的最小值(MPa) 0.5 0.08 15 0.5 0.5 0.3 0.5 0.5 60 0.08 0.0004 3 15 - 膜層 種類 PI LCP PEEK 特殊 聚苯乙烯 PEI PEN PAEK PPE PI PI PI PI PET PI Tg(℃) >200 >200 150 >200 >200 165 158 172 >200 >200 >200 >200 69 >200 厚度(μm) 25 25 25 25 50 188 75 25 25 25 25 25 25 25 高頻電路用積層體 C階樹脂特性 厚度(μm) 5 5 5 5 10 25 15 15 15 25 25 25 5 5 拉伸強度(MPa) 100 70 89 75 56 78 84 84 86 70 12 44 89 330 拉伸伸長率(%) 4 11 3 3 10 38 28 28 95 11 250 6 3 80 Tg(℃) 230 168 220 173 162 164 173 173 196 168 30 150 220 >200 彈性係數(GPa) 1.8 0.3 2.4 1.8 1.8 1.4 1.7 1.7 2.5 0.3 0.05 0.2 2.4 3.4 相對介電常數 2.6 3 2.9 2.6 2.6 2.8 2.8 2.8 2.5 3.2 2.9 3.2 2.9 3.3 介電損耗正切 0.005 0.009 0.008 0.005 0.005 0.004 0.004 0.004 0.003 0.02 0.012 0.02 0.008 0.018 金屬層 種類 電解銅箔A 電解銅箔B 電解銅箔A 壓延銅箔A 電解銅箔A 電解銅箔A 電解銅箔A 電解銅箔A 電解銅箔A 電解銅箔B 電解銅箔B 濺鍍銅膜 電解銅箔A 電解銅箔A 表面粗糙度Ra(nm) 110 150 110 35 110 110 110 110 110 350 350 3 110 110 厚度(μm) 18 18 18 35 12 18 18 18 18 18 18 1 18 18 積層條件 加熱溫度(℃) 150 150 190 160 110 180 170 170 190 150 40 220 210 120 負荷(kN/m) 10 17 10 14 15 16 15 15 17 20 10 0.5 10 10 積層體特性 積層體厚度(μm) 71 71 71 135 94 274 141 91 91 111 111 77 71 71 金屬剝離強度(N/cm) 7 7.8 6 5.3 6.2 7.5 8.3 8.3 5.9 7.8 4.9 3.3 6 5 膜剝離強度(N/cm) 6.6 8 6.5 6 7 11 7.6 6.5 5.4 6.5 6.8 6.1 5.5 7.4 電路基板評價 傳輸損失(dB/100 mm) -4.6 -4.9 -4.9 -4.2 -4.5 -4.2 -4 -3.8 -3.6 -5.5 -6.2 -6.8 加工時變形 -7.1 基板階差 良好 良好 良好 良好 良好 良好 良好 良好 良好 不良 不良 不良 - 良好 積層體 捲繞體 卷芯 材質 ABS SUS SUS SUS SUS SUS SUS SUS SUS SUS 半徑(mm) 40 100 30 40 80 100 100 100 100 30 10 30 30 100 積層體捲繞體評價 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 不良 良好 良好 不良 [Table 1] Example Comparative example 1 2 3 4 5 6 7 8 9 1 2 3 4 5 Composition for resin layer polymer species P-1 P-1 P-1 P-2 P-3 P-4 P-5 P-5 P-4 P-1 P-1 P-4 P-1 SEBS Mass parts 50 35 80 50 50 50 50 50 100 10 5 10 80 100 Hardening compound species Compound A Compound B Compound C Compound A Compound A Compound A Compound A Compound A - Compound B Compound B Compound B Compound C - Mass parts 50 65 20 50 50 50 50 50 - 90 10 90 20 - species - - - - - - - - - - Compound D - - - Mass parts - - - - - - - - - - 85 - - - Hardening additives species Hardening aid A Hardening aid A Hardening aid A Hardening aid A Hardening aid B Hardening aid A Hardening aid A Hardening aid A - Hardening aid A Hardening aid A Hardening aid A Hardening aid A - Mass parts 5 2.5 5 5 0.2 5 5 5 - 5 5 5 5 - Solvent species Solvent A Solvent B Solvent A Solvent A Solvent A Solvent A Solvent A Solvent A Solvent A Solvent A Solvent A Solvent A Solvent A - Mass parts 160 200 160 160 160 160 160 160 160 160 160 160 160 - B-stage film Constitution Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / Resin / Film / Resin / Film / Resin / Metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal / resin / film / resin / metal Metal layer species Electrolytic copper foil A Electrolytic copper foil B Electrolytic copper foil A Rolled copper foil A Electrolytic copper foil A Electrolytic copper foil A Electrolytic copper foil A Electrolytic copper foil A Electrolytic copper foil A Electrolytic copper foil A Electrolytic copper foil B Electrolytic copper foil B Electrolytic copper foil A - Surface roughness Ra (nm) 110 150 110 35 110 110 110 110 110 110 350 350 110 - Thickness (μm) 18 18 18 35 12 18 18 18 18 18 18 18 18 - B-stage resin layer Surface roughness Ra (nm) 35 29 42 32 34 34 34 34 34 29 15 0.01 42 - Thickness (μm) 5 5 5 5 10 25 5 15 15 25 25 25 5 5 The surface roughness of the peeling layer after peeling Ra (nm) 20 18 twenty one 19 20 twenty two twenty one twenty one twenty one 18 14 37 twenty one - The maximum value of the coefficient of elasticity under 50℃ and below 80℃ (MPa) 6 4 10 6 6 5 6 6 9 4 0.007 3 10 - The minimum value of the coefficient of elasticity above 80°C and below 200°C (MPa) 0.5 0.08 15 0.5 0.5 0.3 0.5 0.5 60 0.08 0.0004 3 15 - Membrane species PI LCP PEEK Special polystyrene PEI PEN PAEK PPE PI PI PI PI PET PI Tg (℃) >200 >200 150 >200 >200 165 158 172 >200 >200 >200 >200 69 >200 Thickness (μm) 25 25 25 25 50 188 75 25 25 25 25 25 25 25 Laminated body for high frequency circuit C-stage resin characteristics Thickness (μm) 5 5 5 5 10 25 15 15 15 25 25 25 5 5 Tensile strength (MPa) 100 70 89 75 56 78 84 84 86 70 12 44 89 330 Tensile elongation (%) 4 11 3 3 10 38 28 28 95 11 250 6 3 80 Tg (℃) 230 168 220 173 162 164 173 173 196 168 30 150 220 >200 Elasticity coefficient (GPa) 1.8 0.3 2.4 1.8 1.8 1.4 1.7 1.7 2.5 0.3 0.05 0.2 2.4 3.4 Relative permittivity 2.6 3 2.9 2.6 2.6 2.8 2.8 2.8 2.5 3.2 2.9 3.2 2.9 3.3 Dielectric loss tangent 0.005 0.009 0.008 0.005 0.005 0.004 0.004 0.004 0.003 0.02 0.012 0.02 0.008 0.018 Metal layer species Electrolytic copper foil A Electrolytic copper foil B Electrolytic copper foil A Rolled copper foil A Electrolytic copper foil A Electrolytic copper foil A Electrolytic copper foil A Electrolytic copper foil A Electrolytic copper foil A Electrolytic copper foil B Electrolytic copper foil B Sputtered copper film Electrolytic copper foil A Electrolytic copper foil A Surface roughness Ra (nm) 110 150 110 35 110 110 110 110 110 350 350 3 110 110 Thickness (μm) 18 18 18 35 12 18 18 18 18 18 18 1 18 18 Build-up conditions Heating temperature (℃) 150 150 190 160 110 180 170 170 190 150 40 220 210 120 Load (kN/m) 10 17 10 14 15 16 15 15 17 20 10 0.5 10 10 Laminated body characteristics Layer thickness (μm) 71 71 71 135 94 274 141 91 91 111 111 77 71 71 Metal peeling strength (N/cm) 7 7.8 6 5.3 6.2 7.5 8.3 8.3 5.9 7.8 4.9 3.3 6 5 Film peeling strength (N/cm) 6.6 8 6.5 6 7 11 7.6 6.5 5.4 6.5 6.8 6.1 5.5 7.4 Circuit board evaluation Transmission loss (dB/100 mm) -4.6 -4.9 -4.9 -4.2 -4.5 -4.2 -4 -3.8 -3.6 -5.5 -6.2 -6.8 Deformation during processing -7.1 Substrate step good good good good good good good good good bad bad bad - good Laminated body wound body Core Material paper paper paper ABS SUS SUS SUS SUS SUS SUS paper SUS SUS SUS Radius (mm) 40 100 30 40 80 100 100 100 100 30 10 30 30 100 Evaluation of laminated body wound body good good good good good good good good good good bad good good bad

上表1中,對下述的簡稱等進行補充。 <聚合體> ·SEBC:馬來酸改質苯乙烯-乙烯丁烯-苯乙烯嵌段共聚物(旭化成化學公司製造、商品名「塔芙泰科(Tuftec)M1913」) <硬化性化合物> ·化合物A:2,2'-雙(4-氰氧苯基)丙烷(東京化成工業公司製造) ·化合物B:SR-16H(阪本藥品工業公司製造、環氧當量:160 g/eq) ·化合物C:HP-4032D(迪愛生(DIC)公司製造、環氧當量:141 meq/g) ·化合物D:SR-4PG(阪本藥品工業公司製造、環氧當量:305 g/eq) <硬化助劑> ·硬化助劑A:1-苄基-2-甲基咪唑(三菱化學公司製造、製品名「BMI 12」) ·硬化助劑B:2-乙基辛酸鋅(和光純藥工業公司製造) <溶媒> ·溶媒A:環戊酮(東京化成工業公司製造) ·溶媒B:二氯甲烷(東京化成工業公司製造) <金屬層種類> ·電解銅箔A:三井金屬股份有限公司製造、商品編號「TQ-M4-VSP」 ·電解銅箔B:三井金屬股份有限公司製造、商品編號「3EC-M3S-HTE」 ·壓延銅箔A:JX金屬股份有限公司製造、商品編號「GHY5-HA」 <膜層種類> ·PI:東麗杜邦(Toray Dupont)公司製造、商品名「卡普頓(Kapton)」、聚醯亞胺 ·LCP:可樂麗(Kuraray)公司製造、商品名「威克斯塔(Vecstar)」、液晶聚合物 ·PEEK:索爾維(Solvay)公司製造、商品名「KT-820」、聚醚醚酮 ·特殊聚苯乙烯:倉敷紡織公司製造、商品名「歐傑斯(Oidys)」 ·PEI:索爾維(Solvay)公司製造、商品名「阿傑姆(Ajedium)」,聚醚醯亞胺 ·PEN:帝人公司製造、商品名「泰奧奈克斯(Teonex)」、聚萘二甲酸乙二酯 ·PAEK:索爾維(Solvay)公司製造、商品名「AV-630」、聚伸芳基醚酮 ·PPE:沙特基礎工業(Sabic)公司製造、商品名「改質聚苯醚(Noryl)EFR-735」、聚苯醚(polyphenylene oxide) ·PET:帝人膜溶液(Teijin Film Solutions)公司製造、商品名「帝人特多龍膜(Teijin Tetoron Film)」、聚對苯二甲酸乙二酯In Table 1 above, the following abbreviations, etc. are supplemented. <Polymer> ·SEBC: Maleic acid modified styrene-ethylene butene-styrene block copolymer (manufactured by Asahi Kasei Chemical Co., Ltd., trade name "Tuftec M1913") <Curable compound> ·Compound A: 2,2'-bis(4-cyanooxyphenyl)propane (manufactured by Tokyo Chemical Industry Co., Ltd.) ·Compound B: SR-16H (manufactured by Sakamoto Pharmaceutical Co., Ltd., epoxy equivalent: 160 g/eq) ·Compound C: HP-4032D (manufactured by DIC, epoxy equivalent: 141 meq/g) ·Compound D: SR-4PG (manufactured by Sakamoto Pharmaceutical Co., Ltd., epoxy equivalent: 305 g/eq) <Hardening aids> · Hardening aid A: 1-benzyl-2-methylimidazole (manufactured by Mitsubishi Chemical Corporation, product name "BMI 12") · Hardening aid B: Zinc 2-ethyloctanoate (manufactured by Wako Pure Chemical Industries, Ltd.) <Solvent> ·Solvent A: Cyclopentanone (manufactured by Tokyo Chemical Industry Co., Ltd.) ·Solvent B: Dichloromethane (manufactured by Tokyo Chemical Industry Co., Ltd.) <Type of metal layer> ·Electrolytic copper foil A: manufactured by Mitsui Metals Co., Ltd., product code "TQ-M4-VSP" ·Electrolytic copper foil B: manufactured by Mitsui Metals Co., Ltd., product number "3EC-M3S-HTE" ·Rolled copper foil A: manufactured by JX Metal Co., Ltd., product code "GHY5-HA" <Type of film> ·PI: manufactured by Toray Dupont, trade name "Kapton", polyimide · LCP: Kuraray (Kuraray) company, trade name "Vecstar", liquid crystal polymer ·PEEK: manufactured by Solvay, trade name "KT-820", polyether ether ketone ·Special polystyrene: manufactured by Kurashiki Textile Co., Ltd., trade name "Oidys" ·PEI: manufactured by Solvay, trade name "Ajedium", polyetherimide ·PEN: manufactured by Teijin, trade name "Teonex", polyethylene naphthalate ·PAEK: manufactured by Solvay, trade name "AV-630", poly(aryl ether ketone) ·PPE: manufactured by Sabic, trade name "modified polyphenylene ether (Noryl) EFR-735", polyphenylene oxide ·PET: manufactured by Teijin Film Solutions, trade name "Teijin Tetoron Film", polyethylene terephthalate

根據表1的結果,可知若使用實施例1~實施例8中獲得的高頻電路用積層體製成電路基板,則可製作減少高頻電路中的電訊號的傳輸損失、且平滑性優異的電路基板。According to the results of Table 1, it can be seen that if the laminates for high-frequency circuits obtained in Examples 1 to 8 are used to make a circuit board, it is possible to produce a circuit board that reduces the transmission loss of electric signals in the high-frequency circuit and is excellent in smoothness. Circuit board.

另外,根據表1的結果,可知實施例1~實施例8中獲得的積層體捲繞體即便於將減少高頻電路中的電訊號的傳輸損失的高頻電路用積層體捲繞於卷芯並加以保管的情況下,亦可有效地抑制捲曲皺痕。In addition, from the results of Table 1, it can be seen that the laminated body wound body obtained in Examples 1 to 8 is even suitable for winding the laminated body for high-frequency circuits, which reduces the transmission loss of electric signals in the high-frequency circuit, on the winding core. In the case of storage, curling wrinkles can also be effectively suppressed.

10:膜層 11:樹脂層面(露出面) 12、16:B階樹脂層 13:樹脂層面(露出面) 14、18:金屬層 20、22:C階樹脂層 30:金屬層 32:B階樹脂層 33:樹脂層面(露出面) 34:膜層 36:C階樹脂層 40:卷芯 42:階差部 50:高頻電路用積層體 51:壓痕(卷曲皺痕) 100:高頻電路用積層體 200:高頻電路用積層體 300:積層體捲繞體10: Membrane 11: Resin layer (exposed surface) 12, 16: B-stage resin layer 13: Resin layer (exposed surface) 14, 18: metal layer 20, 22: C-stage resin layer 30: Metal layer 32: B-stage resin layer 33: Resin layer (exposed surface) 34: Membrane 36: C-stage resin layer 40: roll core 42: step part 50: Laminated body for high frequency circuit 51: Indentation (curl wrinkles) 100: Laminated body for high frequency circuit 200: Laminated body for high frequency circuit 300: Laminated body wound body

圖1A是示意性地表示高頻電路用積層體的製造例A中的步驟的一部分的剖面圖。 圖1B是示意性地表示高頻電路用積層體的製造例A中的步驟的一部分的剖面圖。 圖1C是示意性地表示高頻電路用積層體的製造例A中的步驟的一部分的剖面圖。 圖1D是示意性地表示高頻電路用積層體的製造例A中的步驟的一部分的剖面圖。 圖1E是示意性地表示高頻電路用積層體的製造例A中的步驟的一部分的剖面圖。 圖2A是示意性地表示高頻電路用積層體的製造例B中的步驟的一部分的剖面圖。 圖2B是示意性地表示高頻電路用積層體的製造例B中的步驟的一部分的剖面圖。 圖2C是示意性地表示高頻電路用積層體的製造例B中的步驟的一部分的剖面圖。 圖3是表示本實施形態的積層體捲繞體的一例的立體圖。 圖4是表示卷芯的一例的立體圖。 圖5是表示自先前的積層體捲繞體倒捲積層體時所產生的壓痕的情形的立體圖。FIG. 1A is a cross-sectional view schematically showing a part of the steps in the manufacturing example A of the laminated body for high-frequency circuits. FIG. 1B is a cross-sectional view schematically showing a part of the steps in the manufacturing example A of the laminated body for high-frequency circuits. FIG. 1C is a cross-sectional view schematically showing a part of the steps in the manufacturing example A of the laminated body for high-frequency circuits. FIG. 1D is a cross-sectional view schematically showing a part of the steps in the manufacturing example A of the laminated body for high-frequency circuits. FIG. 1E is a cross-sectional view schematically showing a part of the steps in the manufacturing example A of the laminated body for high-frequency circuits. 2A is a cross-sectional view schematically showing a part of the steps in the manufacturing example B of the laminated body for high-frequency circuits. 2B is a cross-sectional view schematically showing a part of the steps in the manufacturing example B of the laminated body for high-frequency circuits. 2C is a cross-sectional view schematically showing a part of the steps in the manufacturing example B of the laminated body for high-frequency circuits. Fig. 3 is a perspective view showing an example of the laminated body wound body of the present embodiment. Fig. 4 is a perspective view showing an example of a winding core. Fig. 5 is a perspective view showing a state of indentation generated when the laminated body is inverted from the conventional laminated body wound body.

Figure 109106333-A0101-11-0002-2
Figure 109106333-A0101-11-0002-2

10:膜層 10: Membrane

11:樹脂層面(露出面) 11: Resin layer (exposed surface)

12、16:B階樹脂層 12, 16: B-stage resin layer

13:樹脂層面(露出面) 13: Resin layer (exposed surface)

14、18:金屬層 14, 18: metal layer

20、22:C階樹脂層 20, 22: C-stage resin layer

100:高頻電路用積層體 100: Laminated body for high frequency circuit

Claims (12)

一種高頻電路用積層體,其中玻璃轉移溫度為150℃以上的膜層與樹脂層相接並積層, 所述樹脂層含有具有由下述通式(1-1)、通式(1-2)及通式(1-3)所表示的重複單元中的至少一種重複單元的聚合物, 所述樹脂層的彈性係數為0.1 GPa~3.0 GPa, 於23℃下所述樹脂層的頻率10 GHz下的介電損耗正切為0.001~0.01,且相對介電常數為2.0~3.0,
Figure 03_image001
所述通式(1-1)~通式(1-3)中,R1 分別獨立地為鹵素原子、碳數1~20的一價烴基、碳數1~20的一價鹵化烴基、硝基、氰基、一級胺基~三級胺基、或一級胺基~三級胺基的鹽;n分別獨立地為0~2的整數;於n為2的情況下,多個R1 可相同亦可不同,且可以任意的組合鍵結而形成環結構的一部分。
A laminate for high-frequency circuits, in which a film layer with a glass transition temperature of 150°C or higher is in contact with a resin layer and laminated, and the resin layer contains the following general formula (1-1) and general formula (1-2). ) And a polymer of at least one of the repeating units represented by the general formula (1-3), the elastic modulus of the resin layer is 0.1 GPa to 3.0 GPa, and the frequency of the resin layer is 10 GHz at 23°C The dielectric loss tangent is 0.001~0.01, and the relative dielectric constant is 2.0~3.0,
Figure 03_image001
In the general formulas (1-1) to (1-3), R 1 is each independently a halogen atom, a monovalent hydrocarbon group having 1 to 20 carbons, a monovalent halogenated hydrocarbon group having 1 to 20 carbons, nitro A group, a cyano group, a primary amino group to a tertiary amino group, or a salt of a primary amino group to a tertiary amino group; n is each independently an integer of 0-2; when n is 2, multiple R 1 may be The same may be different, and they may be bonded in any combination to form a part of the ring structure.
如請求項1所述的高頻電路用積層體,其中所述樹脂層的厚度為1 μm~30 μm,且所述膜層的厚度為10 μm~300 μm。The laminate for high-frequency circuits according to claim 1, wherein the resin layer has a thickness of 1 μm to 30 μm, and the film layer has a thickness of 10 μm to 300 μm. 如請求項1或請求項2所述的高頻電路用積層體,其中所述樹脂層與所述膜層的剝離強度為5.0 N/cm以上。The laminate for high-frequency circuits according to claim 1 or 2, wherein the peel strength between the resin layer and the film layer is 5.0 N/cm or more. 如請求項1至請求項3中任一項所述的高頻電路用積層體,其於不與所述膜層相接的所述樹脂層的面上進一步相接積層金屬層而成。The laminate for high-frequency circuits according to any one of claims 1 to 3, wherein a metal layer is further laminated on the surface of the resin layer that is not in contact with the film layer. 如請求項4所述的高頻電路用積層體,其中所述樹脂層與所述金屬層的剝離強度為5.0 N/cm以上。The laminate for high-frequency circuits according to claim 4, wherein the peel strength of the resin layer and the metal layer is 5.0 N/cm or more. 如請求項4或請求項5所述的高頻電路用積層體,其中所述金屬層的厚度為3 μm~50 μm。The laminate for high-frequency circuits according to claim 4 or claim 5, wherein the thickness of the metal layer is 3 μm to 50 μm. 如請求項1至請求項6中任一項所述的高頻電路用積層體,其中所述膜層為選自由聚醯亞胺、聚醚醯亞胺、液晶聚合物、聚萘二甲酸乙二酯、聚苯乙烯、環烯烴聚合物、聚醚醚酮、聚伸芳基醚酮、及聚苯醚所組成的群組中的一種。The laminate for high-frequency circuits according to any one of claim 1 to claim 6, wherein the film layer is selected from the group consisting of polyimide, polyetherimide, liquid crystal polymer, polyethylene naphthalate One of the group consisting of diester, polystyrene, cyclic olefin polymer, polyether ether ketone, polyarylene ether ketone, and polyphenylene ether. 一種柔性印刷基板,包括如請求項1至請求項7中任一項所述的高頻電路用積層體。A flexible printed circuit board comprising the laminate for high-frequency circuits according to any one of claims 1 to 7. 一種高頻電路用積層體的製造方法,包括:對玻璃轉移溫度為150℃以上的膜層與表面粗糙度Ra為1 nm~100 nm的B階樹脂層於50℃~200℃下進行加熱並施加1 kN/m~19 kN/m的線負荷來加以貼合的步驟。A method for manufacturing a laminate for high-frequency circuits includes: heating and heating a film layer with a glass transition temperature of 150°C or higher and a B-stage resin layer with a surface roughness Ra of 1 nm to 100 nm at 50°C to 200°C. The step of bonding by applying a linear load of 1 kN/m to 19 kN/m. 如請求項9所述的高頻電路用積層體的製造方法,更包括:於所述B階樹脂層的貼合有所述膜層之面的背面,貼合表面粗糙度Ra為10 nm~300 nm的金屬層的步驟。The method for manufacturing a laminate for a high-frequency circuit according to claim 9, further comprising: on the back of the B-stage resin layer on which the film layer is bonded, the bonding surface roughness Ra is 10 nm to 300 nm metal layer steps. 一種B階片,具有B階樹脂層、以及形成於所述B階樹脂層的至少其中一面的膜層,所述B階片中, 於所述B階樹脂層進行硬化而成為C階樹脂層時, 所述C階樹脂層的彈性係數為0.1 GPa~3.0 GPa, 所述C階樹脂層及所述膜層的於23℃下頻率10 GHz下的介電損耗正切為0.001~0.01,且相對介電常數為2.0~3.0。A B-stage sheet having a B-stage resin layer and a film layer formed on at least one side of the B-stage resin layer. In the B-stage sheet, When the B-stage resin layer is cured to become a C-stage resin layer, The elastic coefficient of the C-stage resin layer is 0.1 GPa~3.0 GPa, The C-stage resin layer and the film layer have a dielectric loss tangent of 0.001-0.01 at a frequency of 10 GHz at 23° C., and a relative dielectric constant of 2.0-3.0. 一種積層體捲繞體,其是如請求項1至請求項7中任一項所述的高頻電路用積層體捲繞於半徑10 mm~100 mm的卷芯而成。A laminated body wound body, which is formed by winding the laminated body for high-frequency circuits according to any one of claims 1 to 7 on a core having a radius of 10 mm to 100 mm.
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