TW202101661A - 用於改良基板處理的基板底座 - Google Patents
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Abstract
本案提供一種基板底座,包括導熱基板支撐件,導熱基板支撐件包括網格;導熱桿,其中包括複數個導通棒,各個導通棒具有第一端及第二端;及感測器。各個導通棒的第一端電氣耦合至網格,且感測器佈置於各個導通棒的第一端及第二端之間,且配置成偵測流動通過各個導通棒的電流。
Description
此處所述的實施例大致關於利用高頻功率設備的半導體處理裝置,且更具體而言,關於利用射頻(RF)功率產生及/或傳輸裝備的半導體處理裝置。
半導體處理裝置通常包括處理腔室,而適以在處理腔室的處理區域之中,於晶圓或基板上實行各種沉積、蝕刻或熱處理步驟。為了在典型電漿強化的化學氣相沉積(PECVD)腔室中達成更高的沉積率,藉由施加增加的射頻(RF)功率來增加電漿輻射密度。RF功率從RF產生器透過噴淋頭及基板底座傳輸,晶圓佈置於基板底座上。基板底座包括焊接至導通電極的導通網格。
然而,歸因於藉由增加的RF功率而引發增加的RF電流,在導通網格與導通電極之間的焊接接頭處產生大量的焦耳熱,從而導致在焊接接頭處局部的加熱,且因此導致在晶圓上不均勻的溫度分布。在處理期間晶圓中溫度的小變化可影響晶圓上實行的經常為溫度相依的處理的此等晶圓之中(WIW)均勻性。
再者,導通網格及導通電極的熱膨脹係數的差異在界面處產生熱應力,造成基板底座的破裂。
因此,本領域中需要藉由改良傳輸RF功率至處理腔室之中的導通網格的處理,來降低橫跨晶圓的溫度變化。額外地,需要在導通網格與導通電極之間的界面處降低熱應力。
此處所述的一或更多實施例提供基板底座,具有RF網格連接至單一RF棒或多重RF棒。
在一個實施例中,一種基板底座,包括導熱基板支撐件,導熱基板支撐件包括網格;導熱桿,其中包括複數個導通棒,各個導通棒具有第一端及第二端;及感測器。各個導通棒之第一端電氣耦合至網格,及感測器佈置於各個導通棒的第一端及第二端之間,且配置成偵測流動通過各個導通棒的電流。
在另一實施例中,一種基板底座,包括導熱基板支撐件,導熱基板支撐件包括網格;導熱桿,其中包括編織的棒。編織的棒包括複數個導通棒,各個導通棒具有第一端及第二端;及複數個導通棒沿著編織的棒的長度編織。各個導通棒的第一端電氣耦合至網格。
仍在另一實施例中,一種基板底座,包括導熱基板支撐件,導熱基板支撐件包括網格;導熱桿,其中包括導通棒,導通棒藉由絕緣層環繞,且具有第一端及第二端;及焊接接頭,連接網格及導通棒。焊接接頭包括複數個網格適配器片段,各個網格適配器片段具有第三端及第四端;及終端,具有第五端及第六端,各個網格適配器片段的第三端焊接至網格,各個網格適配器片段的第四端焊接至終端的第五端,及導通棒的第一端焊接至終端的第六端。
在以下說明書中,提及數個特定細節以提供本揭露案的實施例的更透徹理解。然而,對本領域中技藝人士而言無須一或更多此等特定細節而可實施本揭露案的一或更多實施例為顯而易見的。在其他實例中,未說明已知特徵以便避免模糊本揭露案的一或更多實施例。
此處所述的實施例大致關於在佈置於半導體處理腔室的處理區域中的晶圓或基板上適以實行高射頻(RF)功率處理的基板底座。基板底座包括RF供電的網格,此網格佈置於基板支撐元件中,且耦合至適以傳輸RF能量至RF供電的網格的RF棒或多重棒。
在基板底座中使用多重RF棒或包括多重編織的導通棒的單一RF棒允許從RF產生器空間分布RF電流至RF供電的網格。因此,減少在RF棒與RF供電的網格之間的焊接接頭處的局部的焦耳加熱,且可達成在定位於基板底座上的晶圓上更均勻的溫度分布。再者,在基板底座中使用多重網格適配器片段界接RF棒及RF供電的網格可減少界面處的熱應力,而減少基板底座破裂的發生。
第1圖根據第一實施例,為處理腔室100的側剖面視圖。藉由範例之方式,在第1圖中的處理腔室100的實施例以電漿強化的化學氣相沉積(PECVD)系統的方式說明,但可使用任何其他類型的處理腔室,包括其他電漿沉積、電漿蝕刻或類似的電漿處理腔室,而不會悖離此處所提供的基本範疇。處理腔室100包括壁102、底部104及腔室蓋106,一起包覆基板底座108及處理區域110。基板底座108可以介電材料製成,例如陶瓷材料(例如,AlN、BN或Al2
O3
材料)。處理腔室100的壁102及底部104可以導電及導熱材料製成,例如鋁或不銹鋼。如第1圖中所顯示,RF產生器142耦合至基板底座108。
如第1圖中所顯示,氣源112透過通過腔室蓋106的氣體管道114耦合至處理腔室100。如所顯示,氣體管道114耦合至背板116,使得處理氣體可通過背板116且進入形成於背板116與氣體分配噴淋頭122之間的氣室118。如第1圖中所顯示,氣體分配噴淋頭122藉由懸吊器120保持在鄰接背板116的適當位置中,使得氣體分配噴淋頭122、背板116及懸吊器120一起形成組件,某些時候稱為噴淋頭組件。在操作期間,從氣源112引入至處理腔室100的處理氣體可填充氣室118且通過氣體分配噴淋頭122,以均勻地進入處理區域110。在替代實施例中,處理氣體可透過額外或替換氣體分配噴淋頭122而附接至壁102之一或更多者的入口及/或噴嘴(未顯示)引入至處理區域110中。
如所顯示,基板底座108包括導熱支撐件130,此導熱支撐件具有RF供電的網格(此後為網格132)安裝於導熱支撐件130內部。導熱支撐件130亦包括單一導電棒(稱為「RF棒」)128佈置於耦合至導熱支撐件130的導通桿126的至少一部分之中。基板124(或晶圓)在處理期間可定位於導熱支撐件130的頂部上。在一些實施例中,RF產生器142透過一或更多傳播線144(顯示一條)耦合至RF棒128。在一些實施例中,RF產生器142以介於約200 kHz與約81 MHz之間的頻率提供RF電流至網格132,例如介於約13.56 MHz與約40 MHz之間的頻率。藉由RF產生器142產生的功率作用以能量化(或「激發」)處理區域110中的氣體成為電漿狀態,以例如在電漿沉積處理期間於基板124的表面上形成層。在一個實施例中,RF棒128透過焊接接頭138焊接至網格132。RF棒128可以鎳(Ni)製成,且網格132可以鉬(Mo)製成。由於鎳(Ni)及鉬(Mo)的熱膨脹係數類似(在25°C下對Ni為13 µm/(m·K)且對Mo為5 µm/(m·K)),對RF棒128及網格132的材料的此選擇可避免歸因於熱應力的焊接接頭的損壞。在其他實施例中,網格132以其他難熔金屬製成,例如鎢(W)。在一些實施例中,RF棒128藉由其他接合方法耦合至網格132。在一些實施例中,於RF棒128與RF產生器142之間提供RF濾波器150。RF濾波器150大致為一或更多低通濾波器或帶阻濾波器任一者,且配置成阻擋RF能量到達RF產生器142。
如第1圖中所顯示,安裝於導熱支撐件130之中的為網格132、可選的偏壓電極146及加熱元件148。偏壓電極146可作用以透過分開的RF連接(未顯示)分開提供RF「偏壓」至基板及處理區域110。加熱元件148可包括配置成在處理期間藉由傳輸AC功率通過來提供熱至基板124的一或更多電阻加熱元件。偏壓電極146及加熱元件148可以導通材料製成,例如鉬(Mo)、鎢(W)或其他類似材料。
網格132亦可作用為靜電夾盤電極,而在處理期間幫助提供基板124對導熱支撐件130的支撐表面136的適當保持力。在一些實施例中,網格132與在其上座落基板124的支撐表面136以距離DT
安裝(顯示於第1圖)。距離DT
可為非常小,例如小於1 mm。因此,橫跨網格132的溫度變化大量影響佈置於支撐表面136上基板124的溫度變化。從網格132傳送至支撐表面136的熱藉由第1圖中的H箭頭表示。
因此,散佈、分散或分布提供至網格132的RF電流量,且因此最小化在網格132交界處建立的添加的溫度增加,導致橫跨網格132更均勻的溫度分布。橫跨網格132均勻的溫度分布建立橫跨支撐表面136及基板124均勻的溫度分布。
本領域中技藝人士將理解RF能量主要透過導通元件的表面區域導通,且因此一般而言,RF導體的電流承載面積藉由RF導通元件的表面積主宰。RF導體的電流承載面積隨著傳輸的RF功率的頻率增加而減少,歸因於表皮深度的減少,傳輸的RF功率隨著RF功率傳輸通過RF導體而能夠穿透至RF導體中。舉例而言,在具有圓形剖面形狀且外部直徑為Do
的RF棒中,介於其表皮深度與表面(Aca
)之間的RF電流承載面積等於剖面積(Ao
=π•Do 2
/4)減去超過其表皮深度的電流承載面積(Ana
=π•Dna 2
/4),其中Dna
為低於其表皮深度的面積的直徑(即,Dna
=Do
– 2•δ,其中δ為表皮深度)。亦即,RF電流承載面積為Ao
–Ana
=π•(Do 2
/4–Dna 2
/4)=π•(Do
–δ) δ。表皮深度可藉由等式δ= (ρ/(πfµr
µo
))0.5
趨近,其中ρ為以Ω·m表示的媒介的電阻,f為以赫茲(Hz)表示的頻率,µr
為材料的相對介電常數,且µo
為自由空間的介電常數。表皮深度代表其中電流密度達到在媒介的表面處其值大約1/e(約37%)的點。因此,在媒介中大部分的電流於媒介的表面與其表皮深度之間流動。因此,具有較大直徑Do
及較大表皮深度δ的單一RF棒128以較大電流承載面積分布提供至網格132的RF電流的量,且因此減少焊接接頭138處局部的加熱。在一個範例中,於13.56 MHz的頻率下純鎳(Ni)材料的表皮深度為大約1.5 µm,且純金(Au)的表皮深度為大約20 µm,因此以金(Au)製成的單一RF棒128具有較大的RF電流承載面積(歸因於較大的表皮深度δ)。然而,金(Au)的熱膨脹係數(在25°C下對Mo為14.2 µm/(m·K)且對W為4.5 µm/(m·K))與焊接接頭138(在25°C下對Mo為5 µm/(m·K)且對W為4.5 µm/(m·K))的材料的熱膨脹係數具有大的差異,且因此焊接接頭138可能無法承受熱應力,導致易於破裂。因此,以具有較小熱膨脹係數(在25°C下為13 µm/(m·K))的鎳(Ni)製成單一RF棒128針對由熱應力造成的破裂可為強健的。
第2圖根據第二實施例,為基板底座108的部分側剖面視圖。在第二實施例中,根據第一實施例的單一RF棒128以雙RF棒228取代。對與第一實施例的此等實質上相同的部件使用相同的元件符號,且可省略重複的部件的說明。在第2圖中,雙RF棒228在焊接接頭238處焊接至網格132。雙RF棒228可以鎳(Ni)製成。在一些實施例中,雙RF棒228可藉由其他接合方式耦合至網格132。雙RF棒228將藉由RF產生器142提供至網格132的RF電流分散成兩個RF棒,且因此減少雙RF棒228之各者處的焦耳加熱(例如,I2
R熱),導致橫跨導熱支撐件130更均勻的溫度分布,而轉變成例如橫跨基板124形成的更均勻沉積的膜層。
在一些實施例中,健康檢查電路256可插在雙RF棒228之各者的RF電流路徑上,介於網格132與一或更多傳播線144之間。健康檢查電路256可為感測器,例如電壓/電流(V/I)感測器,用於偵測通過雙RF棒228之各者的電流,以便偵測對雙RF棒228之任一者的任何損傷或降級。此損傷/降級的早期偵測可用以識別問題,使得基板底座108可在任何災難性故障發生之前藉由重新焊接RF棒228來修復。
雙RF棒228可取代根據第一實施例在處理腔室100中的單一RF棒128,對RF濾波器150具有少量或無須修改。在一些實施例中,雙RF棒228可使用連接至RF濾波器150的RF捆帶(未顯示)結合。此配置對設計用於單一RF棒128的RF濾波器150無須修改。在一些實施例中,一或更多RF捆帶(未顯示)可佈置於焊接接頭238與RF濾波器之間,以補償RF棒的膨脹。
在以上所述的範例實施例中,第2圖說明且顯示雙RF棒228。然而,可使用任何數量的多重RF棒,包括三個或更多個。通過各個RF棒的電流可因此為通過單一RF棒128的電流的一半(或更少)。因此,電流以較低幅度且於橫跨網格132的多重分布的點流至焊接接頭138中,幫助分散橫跨基板124產生的熱的量,在任一點處建立更少的熱增加。橫跨基板124分散產生的熱作用以改良在基板124上沉積的膜層中的均勻性。如所顯示,焊接接頭138之各者可彼此相對遠離分開地分散,橫跨支撐表面136大幅分布電流及產生的熱,導致橫跨基板124更均勻的熱分散。
第3A及3B圖為根據第一實施例的單一RF棒128及根據第三實施例的編織的RF棒328的剖面視圖。在第3A圖中,單一RF棒128包括藉由絕緣層304環繞的一個導通棒302。在第3B圖中,多重導通棒306(顯示7個導通棒)沿著編織的RF棒328的長度編織,且藉由絕緣層308環繞。在編織的RF棒328中,介於所有導通棒306的表面與表皮深度之間結合的電流承載面積的總和大於單一RF棒128的表面與表皮深度之間的電流承載面積。此舉提供建立更大面積的優點,以導通介於編織的RF棒328與網格132之間大部分的RF能量,這相對於第3A圖中顯示的常規單一RF棒配置減少在焊接接頭138處及亦在編織的RF棒328之中歸因於焦耳加熱產生的熱。舉例而言,具有6 mm外部直徑DR
及大約1.46 µm表皮深度δ的單一RF棒128,具有Aca1
=π•(DR
–δ)δ的電流承載面積為大約2.8x10-2
mm2
。相較之下,具有2 mm的外部直徑Dc
的導通棒306之各者具有Aca2
=π•(Dc
–δ)δ的電流承載面積為大約0.9x10-3
mm2
。因此,對於具有七個導通棒306的編織的RF棒328,總電流承載面積對單一RF棒128的電流承載面積的比率(即,7xAca2
/Aca1
=7x(Dc
–δ)/(DR
–δ))為約2.3。因此,在第3B圖中所顯示的實施例中,電流分布在更大電流承載面積上,在編織的RF棒328中焊接接頭138之各者處比在第3A圖中所顯示的單一RF棒128處產生更少的焦耳加熱。
此處所揭露的編織的RF棒328亦在常規單一RF棒上提供優點,因為具有較小直徑的導通棒306之各者具有較小剖面積,且因此在焊接接頭138之各者處具有較小的接觸面積。歸因於RF功率通過的傳輸,導通棒306的較小剖面積減少導通棒306之各者導熱在導通棒306中產生的任何熱的能力。減少導熱的能力亦在導通支撐件130之中更均勻地分散熱,幫助建立橫跨支撐表面136及基板124更均勻的溫度分布。隨著以上前者範例,其中單一RF棒128的外部直徑DR
等於6 mm且導通棒306之各者的外部直徑DC
等於2 mm,具有七個導通棒306的編織的RF棒328之導熱面積對單一RF棒128面積的比率將為約0.78。
第4A圖根據一個實施例,為基板底座108的部分剖面視圖。在所顯示的實施例中,焊接接頭138包括終端402及焊接部分404及408。具有介於約5 mm與約12 mm之間的大直徑的RF棒128在焊接部分404處焊接至終端402。終端402可以鐵磁金屬製成,例如鐵(Fe)、鈷(Co)、鎳(Ni)或其他類似的材料。在一個實施例中,終端402為Kovar® Ni-Fe合金。終端402在焊接部分408處進一步焊接至RF終端406(亦稱為「適配器」)。RF終端406焊接至佈置於基板底座108之中的網格132(顯示於第1圖中)。在一個實施例中,基板底座108在超過1000ºC的溫度下以陶瓷材料製成;因此,RF終端406可以與網格132相同的難熔金屬(即,耐熱且耐耗)製成,例如鉬(Mo)、鎢(W)或其他類似的材料。焊接部分404及408可包括一或更多過渡金屬,例如鎳(Ni)或其他類似的材料。由於終端402的材料(例如,在25°C下Mo為5 µm/(m·K)且W為4.5 µm/(m·K))及RF終端406及網格132的材料(例如,在25°C下Fe為12 µm/(m·K),Co為16 µm/(m·K),Ni為13 µm/(m·K))的熱膨脹係數具有大的差異,焊接部分408在藉由第4A圖中的箭頭表示的方向中易受應力,特別在例如高於500°C的抬升的溫度下,導致易於破裂。此應力的幅度取決於終端402與RF終端406之間界面的尺寸。大面積的界面(例如,歸因於RF棒128的大直徑,例如介於約5 mm與約12 mm之間)在界面處引入更高的應力。具體而言,隨著在界面處面積中的溫度提升ΔT,界面處面積的長度L增加L=L+αLΔT,其中α為熱膨脹係數。
第4B圖根據一個實施例,為基板底座108的部分剖面視圖,其中在第4A圖中所顯示的RF終端(適配器)406藉由包括多重片段(亦稱為「網格適配器片段」)412的RF終端(適配器)410取代。儘管多重片段412的總剖面面積保持與RF終端406的剖面面積相等,多重片段412之各者具有比RF終端406更小的直徑。因此,具有更小直徑的多重片段412的RF終端410減少歸因於熱膨脹係數的差異引發的局部應力。
第5圖根據一個實施例,為基板底座108的部分剖面視圖。在所顯示的實施例中,焊接接頭238包括終端502及焊接部分504。具有圓形佈置的多重個別棒的多重RF棒228在焊接部分504處焊接至終端502。終端502可以鐵磁金屬製成,例如鐵(Fe)、鈷(Co)、鎳(Ni)或其他類似的材料。在一個實施例中,終端502為Kovar® Ni-Fe合金。終端502進一步連接至取代適配器(第4A圖中的RF終端406及第4B圖中的RF終端)的管道506。管道(適配器)506具有中空環形,此中空環形在垂直於多重RF棒228的長度的平面中具有大的直徑。管道506連接至多重RF棒228中所有個別的RF棒,且可以鐵磁金屬製成,例如鎳(Ni)或其他類似的材料。因為管道506為中空的,所以管道506可彎折且吸收藉由多重RF棒228的熱膨脹產生的應力。
歸因於中空及大直徑,與具有較小直徑的實心管道相比,管道506的表面積可顯著地增加。舉例而言,具有5 mm的直徑DST
的實心管道(大約為目前所使用的典型RF棒的直徑),實心管道的周長為π•DST
~15.7mm。對於具有45 mm的直徑DHT
及2 mm的厚度t的中空管道,總周長(中空管道的外部周長及內部周長的總和)為π• DHT
+π•(DHT
-t)~276mm。因此,中空管道的表面積比實心管道更大約17倍。此增加的表面積減少在管道506中的局部加熱。
第6圖根據一個實施例,為基板底座108的部分剖面視圖,其中在第2圖中所顯示的一個階級網格132藉由兩個階級網格632取代。兩個階級網格632的結構減少在基板124上焊接接頭238的位置(稱為RF熱點)處的熱產生。具體而言,兩個階級網格632的結構幫助在基板底座108之中向下移動熱點,且因此減少在基板124上的熱點。
在此處所述的範例實施例中,於佈置於半導體處理腔室的處理區域中的晶圓或基板上適以實行高射頻(RF)功率處理的基板底座包括多重RF棒或多重編織的導通棒,使得藉由RF產生器提供而透過多重RF棒或多重編織的導通棒至RF供電的網格的RF電流在空間上分布。因此,介於多重RF棒或多重編織的導通棒與RF供電的網格之間在焊接接頭處的局部的焦耳加熱減少,且可達成在定位於基板底座上的晶圓上更均勻的溫度分布。再者,在基板底座中使用多重網格適配器片段界接RF棒及RF供電的網格可減少在界面處的熱應力,從而減少基板底座破裂的發生。
儘管以上導向本揭露案的實施例,可衍生本揭露案的其他及進一步實施例而不會悖離其基本範疇,且其範疇藉由以下申請專利範圍來決定。
100:處理腔室
102:壁
104:底部
106:腔室蓋
108:基板底座
110:處理區域
112:氣源
114:氣體管道
116:背板
118:氣室
120:懸吊器
122:氣體分配噴淋頭
124:基板
126:導通桿
128:RF棒
130:導通支撐件
132:網格
136:表面
138:焊接接頭
142:RF產生器
144:傳播線
146:偏壓電極
148:加熱元件
150:RF濾波器
228:RF棒
238:焊接接頭
256:健康檢查電路
302:導通棒
304:絕緣層
306:導通棒
308:絕緣層
328:編織的RF棒
402:終端
404:焊接部分
406:RF終端(適配器)
408:焊接部分
410:RF終端(適配器)
412:多重片段(網格適配器片段)
502:終端
504:焊接部分
506:管道
632:兩個階級網格
以此方式可詳細理解本揭露案以上所載之特徵,以上簡要概述的本揭露案的更具體說明可藉由參考實施例而獲得,某些實施例圖示於隨附圖式中。然而,應理解隨附圖式僅圖示本揭露案的典型實施例,且因此不應考量為其範疇之限制,因為本揭露案認可其他均等效果的實施例。
第1圖根據第一實施例,為處理腔室的側剖面視圖。
第2圖根據第二實施例,為基板底座的部分側剖面視圖。
第3A圖及第3B圖為根據第一實施例的單一RF棒及根據第三實施例的編織的RF棒的剖面視圖。
第4A圖及第4B圖根據本揭露案的實施例,為基板底座的部分剖面視圖。
第5圖根據一個實施例,為基板底座的部分剖面視圖。
第6圖根據一個實施例,為基板底座的部分剖面視圖。
為了促進理解,已盡可能地使用相同的元件符號代表共通圖式中相同的元件。應考量一個實施例的元件及特徵可有益地併入其他實施例中而無須進一步記載。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
108:基板底座
124:基板
126:導通桿
130:導通支撐件
132:網格
136:表面
142:RF產生器
144:傳播線
150:RF濾波器
228:RF棒
238:焊接接頭
256:健康檢查電路
Claims (20)
- 一種基板底座,包含: 一導熱基板支撐件,包含一網格; 一導熱桿,其中包含複數個導通棒,各個導通棒具有一第一端及一第二端;以及 一感測器,其中 各個導通棒之該第一端電氣耦合至該網格,及 該感測器佈置於各個導通棒的該等第一端及第二端之間,且配置成偵測流動通過各個導通棒的電流。
- 如請求項1所述之基板底座,其中各個導通棒藉由一絕緣層環繞。
- 如請求項1所述之基板底座,進一步包含: 一RF濾波器,連接至各個導通棒的該第二端;以及 一RF產生器,耦合至該RF濾波器。
- 如請求項3所述之基板底座,其中該RF產生器以約13.56 MHz的一頻率提供一RF電流。
- 如請求項1所述之基板底座,其中: 該些導通棒包含鎳, 該網格包含鉬,且 該些導通棒焊接至該網格。
- 如請求項1所述之基板底座,其中該感測器為一電壓/電流(V/I)感測器。
- 一種基板底座,包含: 一導熱基板支撐件,包含一網格; 一導熱桿,其中包含一編織的棒,其中該編織的棒包含: 複數個導通棒,各個導通棒具有一第一端及一第二端;以及 該些導通棒沿著該編織的棒的一長度編織,及 各個導通棒的該第一端電氣耦合至該網格。
- 如請求項7所述之基板底座,其中該些導通棒藉由一絕緣層環繞。
- 如請求項7所述之基板底座,進一步包含: 一RF濾波器,連接至各個導通棒的該第二端;以及 一RF產生器,耦合至該RF濾波器。
- 如請求項9所述之基板底座,其中該RF產生器以約13.56 MHz的一頻率提供一RF電流。
- 如請求項7所述之基板底座,其中: 該些導通棒包含鎳, 該網格包含鉬,且 該些導通棒焊接至該網格。
- 一種基板底座,包含: 一導熱基板支撐件,包含一網格; 一導熱桿,其中包含一導通棒,該導通棒藉由一絕緣層環繞,且具有一第一端及一第二端;以及 一焊接接頭,連接該網格及該導通棒,其中: 該焊接接頭包含: 一適配器,具有一第三端及一第四端;以及 一終端,具有一第五端及一第六端, 該適配器的該第三端焊接至該網格, 該適配器的該第四端焊接至該終端的該第五端,及 該導通棒的該第一端焊接至該終端的該第六端。
- 如請求項12所述之基板底座,其中該適配器包含複數個網格適配器片段,各個網格適配器片段在該適配器的該等第三及第四端處分別具有一第七端及一第八端。
- 如請求項13所述之基板底座,其中: 該導通棒包含鎳, 該終端包含選自以下構成之群組的一材料:鐵、鈷及鎳,及 該些網格適配器片段及該網格包含選自以下構成之群組的材料:鉬及鎢。
- 如請求項12所述之基板底座,其中該適配器為一中空管道,在垂直於該導通棒的一長度的一平面中延伸。
- 如請求項15所述之基板底座,其中: 該導通棒包含鎳, 該終端包含選自以下構成之群組的一材料:鐵、鈷及鎳,及 該中空管道包含鎳。
- 如請求項12所述之基板底座,進一步包含: 一RF濾波器,連接至各個導通棒的該第二端;以及 一RF產生器,耦合至該RF濾波器。
- 如請求項17所述之基板底座,其中該RF產生器以約13.56 MHz的一頻率提供一RF電流。
- 如請求項12所述之基板底座,其中該網格為一個階級網格。
- 如請求項12所述之基板底座,其中該網格為兩個階級網格。
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US201962852895P | 2019-05-24 | 2019-05-24 | |
US62/852,895 | 2019-05-24 | ||
US16/814,736 US11587773B2 (en) | 2019-05-24 | 2020-03-10 | Substrate pedestal for improved substrate processing |
US16/814,736 | 2020-03-10 |
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TW202101661A true TW202101661A (zh) | 2021-01-01 |
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CN (1) | CN113874548A (zh) |
SG (1) | SG11202112207SA (zh) |
TW (1) | TW202101661A (zh) |
WO (1) | WO2020242555A1 (zh) |
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JP4531004B2 (ja) * | 2006-03-24 | 2010-08-25 | 日本碍子株式会社 | 加熱装置 |
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JP4450106B1 (ja) * | 2008-03-11 | 2010-04-14 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
JP2010238705A (ja) * | 2009-03-30 | 2010-10-21 | Tokyo Electron Ltd | プラズマ処理装置 |
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KR101933292B1 (ko) | 2014-06-27 | 2018-12-27 | 엔지케이 인슐레이터 엘티디 | 접합 구조체 |
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JP2022534687A (ja) | 2022-08-03 |
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SG11202112207SA (en) | 2021-12-30 |
US20230147452A1 (en) | 2023-05-11 |
WO2020242555A1 (en) | 2020-12-03 |
KR20220000405A (ko) | 2022-01-03 |
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