CN113874548A - 用于改良基板处理的基板底座 - Google Patents

用于改良基板处理的基板底座 Download PDF

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CN113874548A
CN113874548A CN202080038428.9A CN202080038428A CN113874548A CN 113874548 A CN113874548 A CN 113874548A CN 202080038428 A CN202080038428 A CN 202080038428A CN 113874548 A CN113874548 A CN 113874548A
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substrate
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V·卡尔塞卡尔
V·K·普拉巴卡尔
V·S·C·帕里米
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Applied Materials Inc
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Abstract

一种基板底座，包括：导热基板支撑件，导热基板支撑件包括网格；导热杆，导热杆中包括多个导通棒，各个导通棒具有第一端及第二端；以及传感器。各个导通棒的第一端电气耦合至网格，且传感器布置于各个导通棒的第一端及第二端之间，且配置成检测流过各个导通棒的电流。

Description

用于改良基板处理的基板底座
技术领域
此处所描述的实施例大致关于利用高频功率设备的半导体处理装置，且更具体而言，关于利用射频(RF)功率产生和/或传输装备的半导体处理装置。
背景技术
半导体处理装置通常包括处理腔室，而适于在处理腔室的处理区域之中，于晶片或基板上实行各种沉积、蚀刻或热处理步骤。为了在典型的等离子体增强化学气相沉积(PECVD)腔室中达成更高的沉积率，通过施加增加的射频(RF)功率来增加等离子体辐射密度。RF功率从RF产生器透过喷淋头及基板底座传输，晶片布置于基板底座上。基板底座包括焊接至导通电极的导通网格。
然而，归因于由增加的RF功率而引发的增加的RF电流，在导通网格与导通电极之间的焊接接头处产生大量的焦耳热，从而导致在焊接接头处的局部的加热，且因此导致在晶片上不均匀的温度分布。在处理期间晶片中温度的小变化可影响晶片上执行的这些经常为温度依赖的处理的晶片内(WIW)均匀性。
再者，导通网格及导通电极的热膨胀系数的差异在界面处产生热应力，造成基板底座的破裂。
因此，本领域中需要通过改良传输RF功率至处理腔室之中的导通网格的处理，来降低横跨晶片的温度变化。另外，需要降低在导通网格与导通电极之间的界面处的热应力。
发明内容
此处所描述的一或更多实施例提供了具有连接至单一RF棒或多个RF棒的RF网格的基板底座。
在一个实施例中，一种基板底座，包括：导热基板支撑件，导热基板支撑件包括网格；导热杆，导热杆中包括多个导通棒，各个导通棒具有第一端及第二端；以及传感器。各个导通棒的第一端电气耦合至网格，及传感器布置于各个导通棒的第一端及第二端之间，且配置成检测流过各个导通棒的电流。
在另一实施例中，一种基板底座，包括：导热基板支撑件，导热基板支撑件包括网格；导热杆，导热杆中包括编织的棒。编织的棒包括多个导通棒，各个导通棒具有第一端及第二端；以及多个导通棒沿着编织的棒的长度进行编织。各个导通棒的第一端电气耦合至网格。
在又另一实施例中，一种基板底座，包括：导热基板支撑件，导热基板支撑件包括网格；导热杆，导热杆中包括导通棒，导通棒由绝缘层环绕，且具有第一端及第二端；以及焊接接头，焊接接头连接网格及导通棒。焊接接头包括：多个网格适配器片段，各个网格适配器片段具有第三端及第四端；以及端子，具有第五端及第六端，各个网格适配器片段的第三端焊接至网格，各个网格适配器片段的第四端焊接至端子的第五端，以及导通棒的第一端焊接至端子的第六端。
附图说明
以此方式可详细理解本公开以上所记载的特征，以上简要概述的本公开的更具体说明可通过参考实施例而获得，某些实施例图示于随附附图中。然而，应理解随附附图仅图示本公开的典型实施例，且因此不应视为对其范围的限制，因为本公开认可其他等效实施例。
图1是根据第一实施例的处理腔室的侧剖面视图。
图2是根据第二实施例的基板底座的部分侧剖面视图。
图3A及图3B为根据第一实施例的单一RF棒及根据第三实施例的编织的RF棒的剖面视图。
图4A及图4B是根据本公开的实施例的基板底座的部分剖面视图。
图5是根据一个实施例的基板底座的部分剖面视图。
图6是根据一个实施例的基板底座的部分剖面视图。
为了促进理解，已尽可能地使用相同的组件符号代表附图中共通的相同要素。应考虑一个实施例的要素及特征可有益地并入其他实施例中而无须进一步记载。
具体实施方式
在以下说明书中，提及数个特定细节以提供对本公开的实施例的更透彻理解。然而，对本领域技术人员而言，显而易见的是，无需这些特定细节中的一或更多个细节而可实施本公开的一或更多实施例。在其他实例中，未说明已知特征以便避免模糊本公开的一或更多实施例。
此处所描述的实施例大致关于适于在安置于半导体处理腔室的处理区域中的晶片或基板上执行高射频(RF)功率处理的基板底座。该基板底座包括RF供电的网格，此网格布置于基板支撑元件中，且耦合至适于传输RF能量至RF供电的网格的RF棒或多个棒。
在基板底座中使用多个RF棒或使用包括多个编织导通棒的单一RF棒允许从RF产生器空间分布RF电流至RF供电的网格。因此，减少了在一个或多个RF棒与RF供电的网格之间的焊接接头处的局部的焦耳加热，且可达成在定位于基板底座上的晶片上的更均匀的温度分布。再者，在基板底座中使用多个网格适配器片段来界接RF棒及RF供电的网格可减少界面处的热应力，从而减少基板底座破裂的发生。
图1是根据第一实施例的处理腔室100的侧剖面视图。通过示例的方式，图1中的处理腔室100的实施例就等离子体增强化学气相沉积(PECVD)系统来说明，但也可使用任何其他类型的处理腔室，包括其他等离子体沉积、等离子体蚀刻或类似的等离子体处理腔室，而不会悖离此处所提供的基本范围。处理腔室100包括壁102、底部104及腔室盖106，壁102、底部104及腔室盖106一起围封基板底座108及处理区域110。基板底座108可以由介电材料制成，介电材料例如陶瓷材料(例如，AlN、BN或Al2O3材料)。处理腔室100的壁102及底部104可以由导电并导热的材料制成，该导电并导热的材料例如铝或不锈钢。如图1中所显示，RF产生器142耦合至基板底座108。
如图1中所显示，气源112经由穿过腔室盖106的气体管道114耦合至处理腔室100。如所显示，气体管道114耦合至背板116，使得处理气体可穿过背板116且进入形成于背板116与气体分配喷淋头122之间的气室118。如图1中所显示，气体分配喷淋头122通过悬吊器120保持在邻接背板116的适当位置中，使得气体分配喷淋头122、背板116及悬吊器120一起形成某些时候称为喷淋头组件的组件。在操作期间，从气源112引入至处理腔室100的处理气体可填充气室118且穿过气体分配喷淋头122，以均匀地进入处理区域110。在替代实施例中，处理气体可透过额外或替换气体分配喷淋头122而附接至壁102之一或更多者的入口和/或喷嘴(未显示)引入至处理区域110中。
如所显示，基板底座108包括导热支撑件130，导热支撑件130具有嵌入导热支撑件130内部的RF供电的网格(此后为网格132)。导热支撑件130亦包括单一导电棒(称为“RF棒”)128，导电棒128布置于耦合至导热支撑件130的导通杆126的至少一部分之中。基板124(或晶片)在处理期间可定位于导热支撑件130的顶部上。在一些实施例中，RF产生器142透过一或更多传播线144(显示一条)耦合至RF棒128。在一些实施例中，RF产生器142以介于约200kHz与约81MHz之间的频率提供RF电流至网格132，例如介于约13.56MHz与约40MHz之间的频率。通过RF产生器142产生的功率作用来将处理区域110中的气体激励(或“激发”)成等离子体状态，以例如在等离子体沉积处理期间于基板124的表面上形成层。在一个实施例中，RF棒128透过焊接接头138焊接至网格132。RF棒128可以镍(Ni)制成，且网格132可以钼(Mo)制成。由于镍(Ni)及钼(Mo)的热膨胀系数类似(在25℃下对Ni为13μm/(m·K)且对Mo为5μm/(m·K))，因此对RF棒128及网格132的材料的此选择可避免归因于热应力的焊接接头138的损坏。在其他实施例中，网格132以其他难熔金属制成，例如钨(W)。在一些实施例中，RF棒128通过其他接合方法耦合至网格132。在一些实施例中，于RF棒128与RF产生器142之间提供RF滤波器150。RF滤波器150通常为一或更多低通滤波器或带阻滤波器，该一或更多低通滤波器或带阻滤波器配置成阻挡RF能量到达RF产生器142。
如图1中所显示，嵌于导热支撑件130之中的为网格132、可选的偏压电极146及加热元件148。偏压电极146可作用以透过分开的RF连接(未显示)将RF“偏压”分开地提供至基板及处理区域110。加热元件148可包括一或更多电阻加热元件，该一或更多电阻加热元件被配置成在处理期间藉由传输AC功率通过该一或更多电阻加热元件来提供热至基板124。偏压电极146及加热元件148可以导通材料制成，例如钼(Mo)、钨(W)或其他类似材料。
网格132亦可作用为静电夹盘电极，而在处理期间帮助对基板124提供抵靠导热支撑件130的支撑表面136的适当保持力。在一些实施例中，网格132被嵌入成与在其上座落基板124的支撑表面136相距距离DT(显示于图1)。距离DT可以非常小，例如小于1mm。因此，横跨网格132的温度变化大量影响布置于支撑表面136上的基板124的温度变化。从网格132传送至支撑表面136的热通过图1中的H箭头表示。
因此，散布、分散或分布提供至网格132的RF电流量，且因此最小化在网格132交界处建立的添加的温度增加，导致了横跨网格132的更均匀的温度分布。横跨网格132的均匀的温度分布建立了横跨支撑表面136及基板124的均匀的温度分布。
本领域技术人员将理解RF能量主要透过导通元件的表面区域传导，且因此一般而言，RF导体的电流承载面积由RF导通元件的表面积主宰。RF导体的电流承载面积随着传输的RF功率的频率增加而减少，归因于表皮深度的减少，传输的RF功率随着RF功率传输通过RF导体而能够穿透至RF导体中。举例而言，在具有圆形横截面形状和外直径Do的RF棒中，介于其表皮深度与表面(Aca)之间的RF电流承载面积等于横截面面积(Ao＝π·Do 2/4)减去超过其表皮深度的电流承载面积(Ana＝π·Dna 2/4)，其中Dna为低于其表皮深度的面积的直径(即，Dna＝Do–2·δ，其中δ为表皮深度)。亦即，RF电流承载面积为Ao–Ana＝π·(Do 2/4–Dna 2/4)＝π·(Do–δ)δ。表皮深度可通过等式δ＝(ρ/(πfμrμo))0.5趋近，其中ρ为以Ω·m表示的媒介的电阻，f为以赫兹(Hz)表示的驱动频率，μr为材料的相对介电常数，且μo为自由空间的介电常数。表皮深度是指其中电流密度达到在媒介的表面处其值大约1/e(约37％)的点。因此，在媒介中大部分的电流于媒介的表面与其表皮深度之间流动。因此，具有较大直径Do及较大表皮深度δ的单一RF棒128以较大电流承载面积来分布提供至网格132的RF电流的量，且因此减少焊接接头138处局部的加热。在一个示例中，于13.56MHz的频率下纯镍(Ni)材料的表皮深度为大约1.5μm，且纯金(Au)的表皮深度为大约20μm，因此以金(Au)制成的单一RF棒128具有较大的RF电流承载面积(归因于较大的表皮深度δ)。然而，金(Au)的热膨胀系数(在25℃下对Mo为14.2μm/(m·K)且对W为4.5μm/(m·K))相对焊接接头138的材料的热膨胀系数(在25℃下对Mo为5μm/(m·K)且对W为4.5μm/(m·K))具有大的差异，且因此焊接接头138可能无法承受热应力，导致易于破裂。因此，以具有较小热膨胀系数(在25℃下为13μm/(m·K))的镍(Ni)制成的单一RF棒128针对由热应力造成的破裂可以是强健的。
图2是根据第二实施例的基板底座108的部分侧剖面视图。在第二实施例中，根据第一实施例的单一RF棒128以双RF棒228取代。对与第一实施例的这些部件实质上相同的部件使用相同的组件符号，且可省略重复的部件的说明。在图2中，双RF棒228在焊接接头238处焊接至网格132。双RF棒228可以镍(Ni)制成。在一些实施例中，双RF棒228可通过其他接合方式耦合至网格132。双RF棒228将由RF产生器142提供给网格132的RF电流分到两个RF棒中，且因此减少双RF棒228的各者处的焦耳加热(例如，I2R热)，从而导致横跨导热支撑件130的更均匀的温度分布，而转变成例如横跨基板124形成的更均匀沉积的膜层。
在一些实施例中，健康检查电路256可插在双RF棒228的各者的RF电流路径上，介于网格132与一或更多传播线144之间。健康检查电路256可以是传感器，例如电压/电流(V/I)传感器，用于检测流过双RF棒228的各者的电流，以便检测对双RF棒228中的任一者的任何损伤或降级。此损伤/降级的早期检测可用以识别问题，使得基板底座108可在任何灾难性故障发生之前通过重新焊接RF棒228来修复。
双RF棒228可取代根据第一实施例在处理腔室100中的单一RF棒128，对RF滤波器150具有少量或无须修改。在一些实施例中，双RF棒228可使用连接至RF滤波器150的RF捆带(未显示)结合。此配置对设计用于单一RF棒128的RF滤波器150无须修改。在一些实施例中，一或更多RF捆带(未显示)可布置于焊接接头238与RF滤波器之间，以补偿RF棒的膨胀。
在以上所述的示例实施例中，图2说明且显示双RF棒228。然而，可使用任何数量的多个RF棒，包括三个或更多个。通过各个RF棒的电流可因此为通过单一RF棒128的电流的一半(或更少)。因此，电流以较低幅度且于横跨网格132的多个分布点处流至焊接接头138中，从而帮助分散横跨基板124产生的热的量，在任一点处建立更少的热增加。横跨基板124分散产生的热作用以改良在基板124上沉积的膜层中的均匀性。如所显示，焊接接头138的各者可彼此相对远离分开地分散，从而横跨支撑表面136广泛分布电流及产生的热，导致横跨基板124的更均匀的热分散。
图3A及3B为根据第一实施例的单一RF棒128及根据第三实施例的编织的RF棒328的剖面视图。在图3A中，单一RF棒128包括由绝缘层304环绕的一个导通棒302。在图3B中，多个导通棒306(显示7个导通棒)沿着编织的RF棒328的长度编织，且由绝缘层308环绕。在编织的RF棒328中，介于所有导通棒306的表面与表皮深度之间结合的电流承载面积的总和大于单一RF棒128的表面与表皮深度之间的电流承载面积。此举提供建立更大面积的优点，以传导介于编织的RF棒328与网格132之间大部分的RF能量，这相对于图3A中显示的常规单一RF棒配置减少了在焊接接头138处及亦在编织的RF棒328之中归因于焦耳加热产生的热。举例而言，具有6mm外直径DR及大约1.46μm表皮深度δ的单一RF棒128，具有大约2.8x10-2mm2的电流承载面积Aca1＝π·(DR–δ)δ。相较之下，具有2mm的外直径Dc的导通棒306的各者具有大约0.9x10-3mm2的电流承载面积Aca2＝π·(Dc–δ)δ。因此，对于具有七个导通棒306的编织的RF棒328，总电流承载面积对单一RF棒128的电流承载面积的比率(即，7xAca2/Aca1＝7x(Dc–δ)/(DR–δ))为约2.3。因此，在图3B中所显示的实施例中，电流分布在更大电流承载面积上，从而在编织的RF棒328中的焊接接头138的各者处比在图3A中所显示的单一RF棒128处产生更少的焦耳加热。
此处所公开的编织的RF棒328相比常规单一RF棒还提供优点，因为具有较小直径的导通棒306的各者具有较小横截面面积，且因此在焊接接头138的各者处具有较小的接触面积。导通棒306的较小横截面面积降低了导通棒306的各者对归因于RF功率传输通过导通棒306而在导通棒306中产生的任何热进行导热的能力。降低导热的能力还在导通支撑件130之中更均匀地分散热，从而帮助建立横跨支撑表面136及基板124的更均匀的温度分布。随着以上前者示例，其中单一RF棒128的外直径DR等于6mm且导通棒306的各者的外直径DC等于2mm，具有七个导通棒306的编织的RF棒328的导热面积对单一RF棒128面积的比率将为约0.78。
图4A是根据一个实施例的基板底座108的部分剖面视图。在所显示的实施例中，焊接接头138包括端子402及焊接部分404和408。具有介于约5mm与约12mm之间的大直径的RF棒128在焊接部分404处焊接至端子402。端子402可以铁磁金属制成，例如铁(Fe)、钴(Co)、镍(Ni)或其他类似的材料。在一个实施例中，端子402为
Figure BDA0003370488320000081
Ni-Fe合金。端子402在焊接部分408处进一步焊接至RF端子406(亦称为“适配器”)。RF端子406焊接至布置于基板底座108之中的网格132(显示于图1中)。在一个实施例中，基板底座108在超过1000℃的温度下以陶瓷材料制成；因此，RF端子406可以与网格132相同的难熔(即，耐热且耐耗的)金属制成，例如钼(Mo)、钨(W)或其他类似的材料。焊接部分404及408可包括一或更多过渡金属，例如镍(Ni)或其他类似的材料。由于端子402的材料的热膨胀系数(例如，在25℃下对Mo为5μm/(m·K)以及对W为4.5μm/(m·K))与RF端子406和网格132的材料的热膨胀系数(例如，在25℃下对Fe为12μm/(m·K)，对Co为16μm/(m·K)，对Ni为13μm/(m·K))具有大的差异，因此焊接部分408在由图4A中的箭头表示的方向中易受应力，特别是在例如高于500℃的抬升的温度下，从而导致易于破裂。此应力的幅度取决于端子402与RF端子406之间界面的尺寸。大面积的界面(例如，归因于RF棒128的大直径，例如介于约5mm与约12mm之间)在界面处引入更高的应力。具体而言，随着在界面处面积中的温度提升ΔT，界面处面积的长度L增加L＝L+αLΔT，其中α为热膨胀系数。
图4B是根据一个实施例的基板底座108的部分剖面视图，其中在图4A中所显示的RF端子(适配器)406由包括多个片段(亦称为“网格适配器片段”)412的RF端子(适配器)410取代。尽管多个片段412的总横截面面积保持与RF端子406的横截面面积相等，但是多个片段412的各者具有比RF端子406更小的直径。因此，具有更小直径的多个片段412的RF端子410减少了归因于热膨胀系数的差异引发的局部应力。
图5是根据一个实施例的基板底座108的部分剖面视图。在所显示的实施例中，焊接接头238包括端子502及焊接部分504。具有圆形布置的多个个别棒的多重RF棒228在焊接部分504处焊接至端子502。端子502可以铁磁金属制成，例如铁(Fe)、钴(Co)、镍(Ni)或其他类似的材料。在一个实施例中，端子502为
Figure BDA0003370488320000091
Ni-Fe合金。端子502进一步连接至取代适配器(图4A中的RF端子406及图4B中的RF端子)的管道506。管道(适配器)506具有中空环形，此中空环形在垂直于多重RF棒228的长度的平面中具有大的直径。管道506连接至多重RF棒228中的所有个别RF棒，且可以铁磁金属制成，例如镍(Ni)或其他类似的材料。因为管道506为中空的，所以管道506可弯曲且吸收由多重RF棒228的热膨胀产生的应力。
归因于中空及大直径，与具有较小直径的实心管道相比，管道506的表面积可显著地增加。举例而言，具有5mm的直径DST(大约为目前所使用的典型RF棒的直径)的实心管道，实心管道的周长为π·DST～15.7mm。对于具有45mm的直径DHT及2mm的厚度t的中空管道，总周长(中空管道的外周长及内周长的总和)为π·DHT+π·(DHT-t)～276mm。因此，中空管道的表面积比实心管道大约17倍。此增加的表面积减少了在管道506中的局部加热。
图6是根据一个实施例的基板底座108的部分剖面视图，其中在图2中所显示的一级(one-level)网格132被二级(two-level)网格632取代。二级网格632的结构减少在基板124上焊接接头238的位置(称为RF热点)处的热产生。具体而言，二级网格632的结构帮助在基板底座108之中向下移动热点，且因此减少在基板124上的热点。
在此处所描述的示例实施例中，适于在安置于半导体处理腔室的处理区域中的晶片或基板上执行高射频(RF)功率处理的基板底座包括多个RF棒或多个编织的导通棒，使得由RF产生器提供的透过多个RF棒或多个编织的导通棒至RF供电的网格的RF电流在空间上分布。因此，介于多个RF棒或多个编织的导通棒与RF供电的网格之间在焊接接头处的局部的焦耳加热减少，且可达成在定位于基板底座上的晶片上的更均匀的温度分布。再者，在基板底座中使用多个网格适配器片段来界接RF棒及RF供电的网格可减少在界面处的热应力，从而减少基板底座破裂的发生。
尽管以上针对本公开的实施例，但可衍生本公开的其他及进一步实施例而不会悖离其基本范围，且其范围由以下权利要求来决定。

Claims (15)

1.一种基板底座，包括：
导热基板支撑件，所述导热基板支撑件包含网格；
导热杆，所述导热杆中包含多个导通棒，各个导通棒具有第一端及第二端；以及
传感器，其中
各个导通棒的所述第一端电气耦合至所述网格，以及
所述传感器布置于各个导通棒的所述第一端及第二端之间，且配置成检测流过各个导通棒的电流。
2.如权利要求1所述的基板底座，其中各个导通棒由绝缘层环绕。
3.如权利要求1所述的基板底座，进一步包括：
RF滤波器，所述RF滤波器连接至各个导通棒的所述第二端；以及
RF产生器，所述RF产生器耦合至所述RF滤波器，其中
所述RF产生器以约13.56MHz的频率提供RF电流。
4.如权利要求1所述的基板底座，其中：
所述多个导通棒包含镍，
所述网格包含钼，且
所述多个导通棒焊接至所述网格。
5.如权利要求1所述的基板底座，其中所述传感器为电压/电流(V/I)传感器。
6.一种基板底座，包括：
导热基板支撑件，所述导热基板支撑件包含网格；
导热杆，所述导热杆中包含编织的棒，其中所述编织的棒包含：
多个导通棒，各个导通棒具有第一端及第二端；以及
所述多个导通棒沿着所述编织的棒的长度进行编织，以及
各个导通棒的所述第一端电气耦合至所述网格。
7.如权利要求6所述的基板底座，其中所述多个导通棒由绝缘层环绕。
8.如权利要求6所述的基板底座，进一步包括：
RF滤波器，所述RF滤波器连接至各个导通棒的所述第二端；以及
RF产生器，所述RF产生器耦合至所述RF滤波器，其中
所述RF产生器以约13.56MHz的频率提供RF电流。
9.如权利要求6所述的基板底座，其中：
所述多个导通棒包含镍，
所述网格包含钼，且
所述多个导通棒焊接至所述网格。
10.一种基板底座，包括：
导热基板支撑件，所述导热基板支撑件包含网格；
导热杆，所述导热杆中包含导通棒，所述导通棒由绝缘层环绕，且具有第一端及第二端；以及
焊接接头，所述焊接接头连接所述网格及所述导通棒，其中：
所述焊接接头包含：
适配器，所述适配器具有第三端及第四端；以及
端子，所述端子具有第五端及第六端，
所述适配器的所述第三端焊接至所述网格，
所述适配器的所述第四端焊接至所述端子的所述第五端，以及
所述导通棒的所述第一端焊接至所述端子的所述第六端。
11.如权利要求10所述的基板底座，其中
所述适配器包括多个网格适配器片段，各个网格适配器片段在所述适配器的所述第三及第四端处分别具有第七端及第八端，
所述导通棒包含镍，
所述端子包含选自以下构成的群组的材料：铁、钴及镍，以及
所述多个网格适配器片段及所述网格包含选自以下构成的群组的材料：钼及钨。
12.如权利要求10所述的基板底座，其中
所述适配器为中空管道，所述中空管道在垂直于所述导通棒的长度的平面中延伸，
所述导通棒包含镍，
所述端子包含选自以下构成的群组的材料：铁、钴及镍，以及
所述中空管道包含镍。
13.如权利要求10所述的基板底座，进一步包括：
RF滤波器，所述RF滤波器连接至各个导通棒的所述第二端；以及
RF产生器，所述RF产生器耦合至所述RF滤波器，其中
所述RF产生器以约13.56MHz的频率提供RF电流。
14.如权利要求10所述的基板底座，其中所述网格为一级网格。
15.如权利要求10所述的基板底座，其中所述网格为二级网格。
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