TW202101099A - Mounting device and manufacturing method of semiconductor device - Google Patents
Mounting device and manufacturing method of semiconductor device Download PDFInfo
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- TW202101099A TW202101099A TW108143657A TW108143657A TW202101099A TW 202101099 A TW202101099 A TW 202101099A TW 108143657 A TW108143657 A TW 108143657A TW 108143657 A TW108143657 A TW 108143657A TW 202101099 A TW202101099 A TW 202101099A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B15/00—Special procedures for taking photographs; Apparatus therefor
- G03B15/02—Illuminating scene
- G03B15/03—Combinations of cameras with lighting apparatus; Flash units
- G03B15/04—Combinations of cameras with non-electronic flash apparatus; Non-electronic flash units
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B15/00—Special procedures for taking photographs; Apparatus therefor
- G03B15/02—Illuminating scene
- G03B15/03—Combinations of cameras with lighting apparatus; Flash units
- G03B15/05—Combinations of cameras with electronic flash apparatus; Electronic flash units
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B7/00—Control of exposure by setting shutters, diaphragms or filters, separately or conjointly
- G03B7/16—Control of exposure by setting shutters, diaphragms or filters, separately or conjointly in accordance with both the intensity of the flash source and the distance of the flash source from the object, e.g. in accordance with the "guide number" of the flash bulb and the focusing of the camera
- G03B7/17—Selection of modes in flash units by exposure control arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/54—Providing fillings in containers, e.g. gas fillings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04N23/60—Control of cameras or camera modules
- H04N23/68—Control of cameras or camera modules for stable pick-up of the scene, e.g. compensating for camera body vibrations
- H04N23/682—Vibration or motion blur correction
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- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
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Abstract
Description
本揭示有關組裝裝置,例如可適用於運用頻閃燈(strobe)照明之組裝裝置。The assembly device of the present disclosure can be applied to an assembly device using strobe lighting, for example.
電子零件組裝裝置中,為了進行精度高的電子零件組裝,會在電子零件被吸附噴嘴吸附保持而往組裝配部移動的期間,藉由具有CCD或CMOS等的拍攝元件之數位相機來拍攝該電子零件,將擷取的該圖像資訊變換成電子訊號,做圖像處理而得到測定值。然後,基於此測定值,於電子零件的移動中修正組裝位置,該電子零件被組裝配至印刷基板。此相機所做的電子零件之拍攝,為了得到誤差少的高精度圖像,必須運用具有規定以上的光量之照明裝置,一般而言會使用頻閃燈所造成的閃光或鹵素燈所造成的連續點燈等手段(例如專利文獻1)。 運用頻閃燈照明之辨識相機的曝光(頻閃燈曝光)中,藉由將曝光時間設為數十μs程度這樣短時間,即使高速的動作也能拍攝,而可做辨識處理。 [先前技術文獻] [專利文獻]In the electronic component assembly device, in order to assemble electronic components with high precision, while the electronic component is sucked and held by the suction nozzle and moved to the assembly assembly part, the electronic component is photographed by a digital camera with an imaging element such as CCD or CMOS. For parts, the captured image information is transformed into electronic signals, and image processing is performed to obtain measured values. Then, based on the measured value, the assembly position is corrected during the movement of the electronic component, and the electronic component is assembled on the printed circuit board. In order to obtain high-precision images with less error when shooting electronic parts with this camera, it is necessary to use a lighting device with a light intensity above the specified level. Generally speaking, flashes caused by strobe lights or continuous flashes caused by halogen lamps are used. Means such as lighting (for example, Patent Document 1). In the exposure (strobe light exposure) of the recognition camera that uses strobe light illumination, by setting the exposure time to a short time of tens of μs, even high-speed actions can be taken, and recognition processing can be performed. [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2000-124683號公報[Patent Document 1] JP 2000-124683 A
[發明所欲解決之問題][The problem to be solved by the invention]
於複數個軸同時動作這樣的裝置中,當在辨識拍攝中其他軸動作的情形下,由於動作振動所造成的影響,拍攝出的圖像可能在靜止位置者與正在振動時者會有位置偏差。頻閃燈曝光中,為了高速處理,其電子電路構成是以短時間內高光量發光為主要,頻閃燈的點燈時間的延長有其最長發光時間的限制,難以使其發光超過裝置的固有振動(例如數十Hz、數十ms等)的1周期來拍攝。 本揭示的待解問題,在於提供一種於頻閃燈曝光辨識拍攝中可減低振動影響的組裝裝置。 其他的待解問題與新穎特徵,將由本說明書之記述及所附圖面而明瞭。 [解決問題之技術手段]In a device where multiple axes are operating at the same time, when recognizing the actions of other axes during shooting, due to the effect of motion vibration, the captured image may have a positional deviation between the person in the static position and the person who is vibrating . In strobe light exposure, for high-speed processing, the electronic circuit composition is mainly based on high light intensity in a short time. The extension of the lighting time of the strobe light has the limitation of the longest light-emitting time, and it is difficult to make the light-emission exceed the inherent device. The imaging is performed in one cycle of vibration (for example, tens of Hz, tens of ms, etc.). The problem to be solved in the present disclosure is to provide an assembly device that can reduce the impact of vibration in the strobe light exposure identification shooting. Other unsolved problems and novel features will be clear from the description of this specification and the accompanying drawings. [Technical means to solve the problem]
若簡單說明本揭示當中代表性者的概要,則如下所述。 亦即,組裝裝置,具備對於拍攝對象物相對地移動,而拍攝前述拍攝對象物之拍攝裝置、及對前述拍攝對象物照射光之照明裝置。前述照明裝置構成為,於前述拍攝裝置的曝光時間內以振動周期的1/2以下的周期做複數次頻閃燈發光。 [發明之功效]A brief description of the outline of the representative persons in this disclosure is as follows. That is, the assembling device includes an imaging device that relatively moves the object to be photographed and photographs the object, and an illuminating device that irradiates the object to be photographed. The lighting device is configured to emit a strobe light multiple times in a period of 1/2 or less of the vibration period during the exposure time of the imaging device. [Effect of Invention]
按照上述組裝裝置,於頻閃燈曝光中能夠減低振動影響。According to the above assembly device, the influence of vibration can be reduced during strobe light exposure.
以下運用圖面說明實施形態及實施例。惟以下說明中,遇同一構成要素標注同一符號而可能省略重覆說明。另,圖面為了使說明更加明確,比起實際的態樣,針對各部位的寬幅、厚度、形狀等可能以模型化表現,惟僅是一例,並非限定本發明之解釋。The following uses the drawings to describe the embodiment and examples. However, in the following description, the same components are marked with the same symbols and repeated descriptions may be omitted. In addition, in order to make the description clearer, the width, thickness, and shape of each part may be represented in a model compared to the actual state, but it is only an example and does not limit the interpretation of the present invention.
<第一實施形態> 運用圖1~5說明頻閃燈曝光之拍攝系統。圖1為第一實施形態之拍攝系統的構成示意圖。圖2為於圖1的拍攝系統的軸動作停止後短時間拍攝的情形下之動作時間點示意圖。圖3為圖1的拍攝系統的發光時間點示意圖。圖4為從圖1的拍攝系統的軸動作停止起算至辨識開始前設立一辨識等待時間而拍攝的情形下之動作時間點示意圖。圖5為於圖1的拍攝系統的軸動作停止後拍攝複數次的情形下之動作時間點示意圖。<The first embodiment> Use Figures 1 to 5 to illustrate the shooting system of strobe light exposure. FIG. 1 is a schematic diagram of the structure of the imaging system of the first embodiment. FIG. 2 is a schematic diagram of the action time point of the shooting system of FIG. 1 in the case of short-term shooting after the axis movement is stopped. FIG. 3 is a schematic diagram of light-emitting time points of the photographing system of FIG. 1. FIG. 4 is a schematic diagram of the action time point in the case of setting up a recognition waiting time before the start of recognition and shooting from the stop of the axis motion of the photographing system of FIG. 1. FIG. 5 is a schematic diagram of the action time point of the shooting system of FIG. 1 when the axis action of the shooting system is stopped and shooting multiple times.
如圖1所示,頻閃燈曝光的拍攝系統100S,具備控制器101、頻閃燈照明電源107a,107b、照明裝置103、具有相機104a與鏡頭104b之拍攝裝置104、及辨識處理裝置105。As shown in FIG. 1, a
控制器101將拍攝觸發(trigger)訊號輸出至相機104a,相機104a接受拍攝觸發訊號而開始曝光,同時將照明觸發訊號(頻閃燈觸發)輸出至頻閃燈照明電源107a,107b以使照明從開始曝光起算點燈至設定好的發光延遲時間為止。頻閃燈照明電源107a,107b從相機104a接收照明觸發訊號,將照明發光電流供給至照明裝置103。照明裝置103由擬似同軸照明103a及側方照明103b等所構成。照明裝置103,是使多數個發光二極體以矩陣狀整齊配置而藉由其面發光的光源來照明拍攝對象的工件108。The
如圖2所示,照明裝置103從拍攝觸發訊號經發光延遲時間(Td4)後,做單發光所致之頻閃燈點燈。控制器101將拍攝觸發訊號輸入至相機104a,經曝光延遲時間(Td1)後,相機104a以設定好的曝光時間(Tex1)份量將快門開放而曝光,通過鏡頭104b拍攝拍攝對象的工件108。相機104a的拍攝完成後(曝光結束後經轉送等待時間(Td2)),相機104a將圖像資料轉送至辨識處理裝置105,經完成等待時間(Td3)後,辨識處理裝置105基於圖像資料算出位置偏差量等。As shown in FIG. 2, the
若將從發出拍攝觸發訊號至辨識計算完成為止的時間訂為辨識時間(Tr),則Tr成為如下式般。 Tr=Td1+Tex1+Td2+Ttr+Td3+Trc 此處,Ttr為圖像轉送時間,Trc為辨識計算時間。If the time from when the shooting trigger signal is issued to when the recognition calculation is completed is set as the recognition time (Tr), then Tr becomes the following formula. Tr=Td1+Tex1+Td2+Ttr+Td3+Trc Here, Ttr is the image transfer time, and Trc is the identification calculation time.
如圖3所示,相機快門開啟中的時間亦即曝光時間(Tex1),為
Tex1=Td4+Tem+Tm。
此處,Tem為發光時間,Tm為曝光餘裕時間。發光延遲時間、發光時間及發光強度為可變值,曝光餘裕時間為固定值,例如為下記的值。
發光時間=5~107.4μs(0.2μs刻度)
發光延遲時間=10~112.4μs(0.2μs刻度)
曝光餘裕時間=5μs(固定值)
發光強度(光量)=512階度
頻閃燈曝光,能夠將曝光時間(Tex1)設定成20μs程度等般極短,實質上的曝光時間亦即發光時間也能設定成10μs程度等般極短,即使是移動中的辨識拍攝仍可辨識,而可達成高速化。此處,所謂移動中的辨識拍攝,為拍攝裝置104是靜止的狀態而拍攝對象的工件108正在移動之情形、拍攝對象的工件108是靜止的狀態而拍攝裝置104正在移動之情形、拍攝裝置104及拍攝對象的工件108雙方正在移動之情形下的辨識拍攝。As shown in Figure 3, the time the camera shutter is opening is the exposure time (Tex1), which is
Tex1=Td4+Tem+Tm.
Here, Tem is the light emission time, and Tm is the exposure margin time. The luminescence delay time, luminescence time, and luminescence intensity are variable values, and the exposure margin time is a fixed value, for example, the following values.
Luminous time = 5~107.4μs (0.2μs scale)
Luminescence delay time = 10~112.4μs (0.2μs scale)
Exposure margin time = 5μs (fixed value)
Luminous intensity (light quantity) = 512 steps
Strobe light exposure, the exposure time (Tex1) can be set to as short as 20μs, and the actual exposure time, that is, the light-emitting time, can also be set to as short as 10μs, even for moving identification shooting. Recognition, and can achieve high speed. Here, the so-called recognition shooting during movement refers to the case where the
如上述般,於複數個軸同時動作這樣的裝置中,當在辨識拍攝中其他軸動作的情形下,由於動作振動所造成的影響,拍攝出的圖像可能在靜止位置者與正在振動時者會有位置偏差。As mentioned above, in a device where multiple axes are operating at the same time, when recognizing the movement of other axes during shooting, due to the influence of motion vibration, the captured image may be in a static position or when it is vibrating. There will be positional deviation.
若於軸動作停止後短時間內拍攝,則會發生振動所造成的辨識偏差。如圖2所示,曝光中的位移的平均值為辨識位置(圖2的黑圓),圖2中位於負方向的位移,發生了辨識偏差。也就是說,於振動中若以1次的頻閃燈發光來拍攝,則位置可能會偏差。If you shoot within a short period of time after the axis motion stops, the recognition error caused by vibration will occur. As shown in Figure 2, the average value of the displacement during exposure is the identification position (the black circle in Figure 2), and the displacement in the negative direction in Figure 2 has an identification deviation. In other words, if shooting with a single strobe light during vibration, the position may shift.
如圖3所示,藉由將實質上的曝光時間亦即發光時間(Tem)設為比振動周期還長,拍攝圖像中振動所造成的晃動便會被平均化,而可減低振動影響。例如,頻閃燈的發光時間為10ms程度,振動周期為10ms以下(振動頻率為100Hz以上)的情形下,便可減低振動影響。但,移動中的曝光、拍攝中,為了提高頻閃燈照度,照明電源輸出會成為高電流,電源容量不足因此無法長時間發光。若發光時間長至100μs程度,振動周期為100μs以下(振動頻率為10kHz以上),便可減低振動影響。As shown in FIG. 3, by setting the actual exposure time, that is, the light emission time (Tem) to be longer than the vibration period, the shaking caused by the vibration in the captured image will be averaged, and the influence of the vibration can be reduced. For example, when the light-emitting time of the strobe lamp is about 10ms and the vibration period is less than 10ms (the vibration frequency is more than 100Hz), the impact of vibration can be reduced. However, in moving exposure and shooting, in order to increase the illuminance of the strobe light, the output of the lighting power supply becomes high current, and the power supply capacity is insufficient, so it cannot emit light for a long time. If the light-emitting time is as long as 100μs and the vibration period is less than 100μs (the vibration frequency is above 10kHz), the impact of vibration can be reduced.
如圖4所示,可設想從軸動作停止起算至開始辨識前設立一辨識等待時間(Trw),等待振動平息後再曝光。藉此,即使振動周期長的情形下仍可減輕振動影響。惟,考量長的振動周期而必須將辨識等待時間(Trw)設定得較長,辨識會耗費時間。As shown in Fig. 4, it is conceivable to set up a recognition waiting time (Trw) from the stop of the axis motion to the start of recognition, and wait for the vibration to subside before exposure. In this way, even if the vibration period is long, the impact of vibration can be reduced. However, considering the long vibration period, the recognition waiting time (Trw) must be set longer, and the recognition will take time.
如圖5所示,亦可設想軸動作停止後,進行複數次(N次)拍攝及辨識計算,而進行它們的平均化處理。藉此,即使不設立一長的辨識等待時間,仍可減輕振動影響。惟,辨識時間(Tr2)會成為圖2、3的情形下的辨識時間(Tr)的近N倍,辨識會耗費時間。圖5的情形下,成為 Tr2=N×Tr-(N-1)Td4。 此處,N=2。As shown in FIG. 5, it is also conceivable that after the axis motion is stopped, a plurality of times (N times) of shooting and recognition calculations are performed, and their averaging processing is performed. In this way, even if a long identification waiting time is not established, the impact of vibration can still be reduced. However, the identification time (Tr2) will be nearly N times the identification time (Tr) in the situations of Figures 2 and 3, and identification will take time. In the case of Figure 5, it becomes Tr2=N×Tr-(N-1)Td4. Here, N=2.
上述的第一實施形態之頻閃燈曝光,曝光時間內的發光僅1次,故以下稱為頻閃燈1次曝光。The stroboscopic light exposure of the above-mentioned first embodiment only emits light once during the exposure time, so it is hereinafter referred to as stroboscopic light exposure once.
<第二實施形態> 運用圖6~8說明第二實施形態之頻閃燈曝光之拍攝系統。圖6為第二實施形態之拍攝系統的構成示意圖。圖7為圖6的拍攝系統的動作時間點示意圖。圖8為圖6的拍攝系統的發光時間點示意圖,圖8(a)為將發光強度設為1/N之情形,圖8(b)為將發光時間設為1/N之情形。<The second embodiment> The shooting system of the second embodiment of the strobe light exposure will be explained using Figs. 6-8. Fig. 6 is a schematic diagram of the configuration of the imaging system of the second embodiment. FIG. 7 is a schematic diagram of the operation time point of the photographing system of FIG. 6. Fig. 8 is a schematic diagram of the light-emitting time point of the photographing system of Fig. 6, Fig. 8(a) is a case where the luminous intensity is set to 1/N, and Fig. 8(b) is a case where the light-emitting time is set to 1/N.
如圖6所示,第二實施形態之拍攝系統100的構成和圖1之拍攝系統100S相同。As shown in FIG. 6, the configuration of the
如圖6、7所示,控制器101將拍攝觸發訊號輸出至相機104a。相機104a從拍攝觸發訊號起算經曝光延遲時間(Td1)後開始曝光,並且從曝光開始起算經設定好的發光延遲時間(Td4)將連續的照明觸發訊號(頻閃燈觸發)輸出至頻閃燈照明電源107a,107b。頻閃燈照明電源107a,107b,從照明觸發訊號起算以事先設定好的發光延遲時間(Td4)、發光時間(Tem)、光量(發光強度)、發光周期(Tep)而使照明裝置103的發光二極體發光。相機104a以設定好的曝光時間(Tex2)份量將快門開放而曝光,通過鏡頭104b拍攝拍攝對象的工件108。相機104a的拍攝完成後(曝光結束後經轉送等待時間(Td2)),相機104a將圖像資料轉送至辨識處理裝置105,經完成等待時間(Td3)後,辨識處理裝置105基於圖像資料算出位置偏差量等。相機104a對於一個拍攝觸發訊號的輸入,輸出複數個觸發訊號。As shown in FIGS. 6 and 7, the
辨識時間(Tr3)和第一實施形態相同而如下式般。 Tr3=Td1+Tex2+Td2+Ttr+Td3+Trc 但,第二實施形態的曝光時間(Tex2)比第一實施形態的曝光時間(Tex1)還長,故第二實施形態的辨識時間(Tr3)會比第一實施形態的辨識時間(Tr)還長恰好(Tex2-Tex1)。The recognition time (Tr3) is the same as in the first embodiment and is as follows. Tr3=Td1+Tex2+Td2+Ttr+Td3+Trc However, the exposure time (Tex2) of the second embodiment is longer than the exposure time (Tex1) of the first embodiment, so the recognition time (Tr3) of the second embodiment will be longer than the recognition time (Tr) of the first embodiment The length is exactly (Tex2-Tex1).
如圖8所示,曝光時間(Tex2),為 Tex2=Tem×(N-1)+Td4+Tem+Tm。 另,發光周期,在現狀的頻閃燈的限制下為10ms以上。例如,若訂 發光周期=10ms 發光延遲時間=10μs 發光時間=50μs 曝光餘裕時間=5μs N=4 則 Tex2=10ms×(4-1)+10μs+50μs+5μs=30.11ms。As shown in Figure 8, the exposure time (Tex2) is Tex2=Tem×(N-1)+Td4+Tem+Tm. In addition, the light emission period is 10ms or more under the limitation of the current strobe light. For example, if you order Luminous period = 10ms Luminescence delay time = 10μs Luminous time = 50μs Exposure margin time = 5μs N=4 then Tex2=10ms×(4-1)+10μs+50μs+5μs=30.11ms.
上述的第二實施形態之頻閃燈曝光,於曝光時間內有複數次發光,故以下稱為頻閃燈多重曝光。The strobe light exposure of the above-mentioned second embodiment emits light several times during the exposure time, so it is referred to as strobe light multiple exposure hereinafter.
另,為了防止過度曝光,將第二實施形態之頻閃燈多重曝光的曝光總光量設為和第一實施形態的頻閃燈1次曝光的光量相同。頻閃燈1次的光量是調整發光時間及發光強度來進行。例如,如圖8(a)所示,當將1次的曝光時間中做N次發光的頻閃燈多重曝光之1次的發光時間設為和頻閃燈1次曝光的發光時間相同的情形下,便將頻閃燈多重曝光的1次的發光強度設為頻閃燈1次曝光的發光強度的1/N。如圖8(b)所示,當將1次的曝光時間中做N次發光的頻閃燈多重曝光之1次的發光強度設為和頻閃燈1次曝光的發光強度相同的情形下,便將1次的發光時間設為1/N。此外,例如當將頻閃燈多重曝光之1次的發光時間設為頻閃燈1次曝光的發光時間的5倍的情形下,便將頻閃燈多重曝光的1次的發光強度設為頻閃燈1次曝光的發光強度的1/5N。In addition, in order to prevent overexposure, the total exposure light intensity of the strobe light multiple exposure of the second embodiment is set to be the same as the light intensity of one exposure of the strobe light of the first embodiment. The amount of light of a strobe light is adjusted by adjusting the luminous time and luminous intensity. For example, as shown in Figure 8(a), when the luminous time of one stroboscopic multiple exposure is set to be the same as the luminous time of one stroboscopic exposure in one exposure time Next, set the luminous intensity of one strobe light multiple exposure to 1/N of the luminous intensity of one strobe light exposure. As shown in Figure 8(b), when the luminous intensity of the first multiple exposure of a strobe light that emits N times in one exposure time is set to be the same as the luminous intensity of one exposure of the strobe light, Set the light emission time to 1/N. In addition, for example, when the light emission time of one strobe light multiple exposure is set to 5 times the light emission time of one strobe light exposure, the light emission intensity of one strobe light multiple exposure is set to the
如圖7所示,1次的曝光時間內使頻閃燈點燈複數次(本例中為4次)。1張圖像中會有複數次頻閃燈點燈份量的圖像被多重曝光,在1張圖像內振動成分會被平均化。為此,於相機的快門開啟中的時間(曝光時間)內,以振動周期(Top)的1/2以下的周期做複數次頻閃燈曝光。藉此,便可減低軸動作或其他軸動作所造成的振動、外擾所造成的振動等所致之辨識偏差。As shown in Fig. 7, the strobe lamp is turned on multiple times (4 times in this example) within one exposure time. There are multiple exposures of the strobe light in one image, and the vibration components in one image are averaged. For this reason, during the time (exposure time) during which the shutter of the camera is opened, a period of less than 1/2 of the vibration period (Top) is used for multiple strobe light exposures. In this way, the identification deviation caused by vibration caused by shaft motion or other shaft motions, and vibration caused by external disturbances can be reduced.
第二實施形態中,於1次的拍攝中使頻閃燈發光複數次,藉由多重曝光來平均化,藉此便可減低因動作軸停止後的振動或辨識對象軸以外的軸動作而發生之振動影響等的外擾影響。此外,可縮短辨識對象動作軸停止後開始辨識的時間。此外,只需1次的拍攝、資料轉送,因此能夠縮短轉送時間與辨識計算的處理時間,比起一般的拍攝複數次頻閃燈1次曝光可更高速化。此外,藉由可達成充分照度的極短時間發光之頻閃燈照明,縮短實質上的曝光時間(正在發光的期間的曝光時間),而亦可做移動中辨識。In the second embodiment, the strobe light is emitted multiple times in one shot, and the multiple exposures are used for averaging, thereby reducing the occurrence of vibration caused by the movement of the axis after the movement axis stops or the movement of the axis other than the recognition target axis. The influence of external disturbances such as the influence of vibration. In addition, the time to start the recognition after the recognition target motion axis stops can be shortened. In addition, only one shooting and data transfer are required, so the transfer time and the processing time for identification calculation can be shortened, and it can be faster than ordinary shooting with multiple strobe lights and one exposure. In addition, with the stroboscopic lighting that can achieve sufficient illumination in a very short time, the actual exposure time (exposure time during the light-emitting period) can be shortened, and it can also be recognized on the move.
<變形例> 以下示例幾個實施形態之代表性的變形例。以下的變形例的說明中,對於具有和上述的實施形態中說明者為相同構成及功能之部分,得使用和上述的實施形態相同的符號。又,針對該部分的說明,於技術上不相矛盾的範圍內,得適當援用上述的實施形態中的說明。此外,上述的實施形態的一部分、及複數個變形例的全部或一部分,於技術上不相矛盾的範圍內,得適當複合性地適用。<Modifications> The following examples illustrate some representative modifications of the embodiments. In the description of the following modification examples, parts having the same configuration and function as those described in the above-mentioned embodiment may be given the same reference numerals as in the above-mentioned embodiment. In addition, for the description of this part, the description in the above-mentioned embodiment may be appropriately used to the extent that it is not technically contradictory. In addition, a part of the above-mentioned embodiment and all or a part of a plurality of modified examples should be appropriately applied in a complex manner within a range that is not technically contradictory.
(第一變形例) 圖9為第一變形例之拍攝系統的構成示意圖。(First modification) FIG. 9 is a schematic diagram of the structure of the imaging system of the first modification.
第二實施形態中,是由相機104a來生成用來進行複數次的頻閃燈發光之觸發訊號,但亦可由相機104a的外部的脈波產生器來生成。第一變形例之拍攝系統100A的相機104a將輸入來的拍攝觸發訊號輸出至脈波生成電路109,脈波生成電路109基於輸入來的拍攝觸發訊號以規定間隔輸出規定數量的觸發訊號。In the second embodiment, the
(第二變形例) 第二實施形態中,當將頻閃燈多重曝光之1次的發光時間設為和頻閃燈1次曝光的發光時間相同的情形下,是將頻閃燈多重曝光之1次的發光強度設為頻閃燈1次曝光的發光強度的1/N,但亦可將頻閃燈多重曝光之1次的發光強度設為和頻閃燈1次曝光的發光強度相同。藉此,於異物檢測用的外觀檢查中,即使在以1次的曝光會照度不足之較暗對象的辨識中,也可做複數次頻閃燈曝光而確保亮度來辨識。(Second Modification) In the second embodiment, when the luminous time of the first multiple exposure of the strobe light is set to be the same as the luminous time of the first exposure of the strobe light, the luminous intensity of the first multiple exposure of the strobe light is set It is 1/N of the luminous intensity of the first exposure of the strobe light, but the luminous intensity of the first multiple exposure of the strobe light can be set to be the same as the luminous intensity of the single exposure of the strobe light. In this way, in the appearance inspection for foreign object detection, even in the recognition of a darker object with insufficient illumination with one exposure, multiple strobe light exposures can be performed to ensure the brightness for recognition.
(第三變形例)
亦可組合第一實施形態之拍攝系統100S與第二實施形態之拍攝系統100。第三變形例之拍攝系統,具備拍攝系統100S的頻閃燈1次曝光的功能(頻閃燈1次曝光模式)與拍攝系統100的頻閃燈多重曝光的功能(頻閃燈多重曝光模式)。(Third modification)
It is also possible to combine the
第三變形例之拍攝系統,在頻閃燈1次曝光模式下,相機104a基於來自控制器101的拍攝觸發訊號輸出單發的觸發訊號,如同拍攝系統100S般動作。在頻閃燈多重曝光模式下,相機104a基於來自控制器101的拍攝觸發訊號輸出連續的觸發訊號,如同拍攝系統100般動作。
[實施例]In the shooting system of the third modification example, in the single exposure mode of the strobe light, the
以下,說明適用於上述的實施形態之組裝裝置的一例亦即覆晶接合器(flip chip bonder)的例子。另,覆晶接合器,例如會在超出晶片面積的廣泛區域形成再配線層之封裝亦即扇出型晶圓級封裝(Fan Out Wafer Level Package:FOWLP)等的製造中運用。Hereinafter, an example of a flip chip bonder (flip chip bonder), which is an example of the assembly device applied to the above-mentioned embodiment, will be described. In addition, flip chip bonders, for example, are used in the manufacture of packages that form a rewiring layer in a wide area beyond the chip area, that is, fan-out wafer level package (FOWLP).
圖10為實施例之覆晶接合器的概略示意俯視圖。圖11為圖10中從箭頭A方向觀看時,拾取翻轉頭及傳遞頭的動作說明圖。圖12為圖10中從箭頭B方向觀看時,接合頭的動作說明圖。圖13為圖10的晶粒供給部的主要部位示意概略截面圖。
如圖10所示,覆晶接合器10,概分具備晶粒供給部1、第一拾取部2a、第二拾取部2b、第一傳遞平台部3a、第二傳遞平台部3b、第一接合部4a、第二接合部4b、搬送部5、基板供給部6K、基板搬出部6H、及監視而控制各部的動作之控制裝置7。另,第二拾取部2b、第二傳遞平台部3b及第二接合部4b,各自相對於通過被拾取的晶粒D而於Y軸方向延伸的線而言和第一拾取部2a、第一傳遞平台部3a及第一接合部4a鏡對稱地配置,同樣地構成,同樣地動作。第二拾取部2b、第二傳遞平台部3b及第二接合部4b的各構成要素的符號「b」和第一拾取部2a、第一傳遞平台部3a及第一接合部4a的各要素的符號「a」對應。Fig. 10 is a schematic plan view of the flip chip bonder of the embodiment. Fig. 11 is an explanatory diagram of the operation of the pick-up and reversal head and the transfer head when viewed from the direction of arrow A in Fig. 10. Fig. 12 is an explanatory diagram of the operation of the bonding head when viewed from the direction of arrow B in Fig. 10. Fig. 13 is a schematic cross-sectional view of main parts of the crystal grain supply part of Fig. 10.
As shown in FIG. 10, the
首先,晶粒供給部1,供給組裝至工件的一例亦即基板P之晶粒D。晶粒供給部1,具備保持已被分割的晶圓11之晶圓保持台12、及將晶粒D從晶圓11頂起之頂起單元13、及晶圓環供給部18。晶粒供給部1,藉由未圖示的驅動手段而於XY方向移動,使拾取的晶粒D移動至頂起單元13的位置。晶圓環供給部18具有收納著晶圓環14的晶圓匣(未圖示),依序將晶圓環14供給至晶粒供給部1,而更換新的晶圓環。收納著晶圓環14的晶圓匣是從覆晶接合器10的外部供給至晶圓環供給部18。晶粒供給部1,將晶圓環14移動至拾取點,以便能夠從晶圓環14拾取期望的晶粒D。晶圓環14,為供晶圓11固定,而可裝配至晶粒供給部1之治具。First, the
第一拾取部2a相對於被拾取的晶粒D是位於基板供給部6K側。第一拾取部2a,具備拾取晶粒D而反轉之拾取翻轉頭21a、及使吸嘴(collet)22a(參照圖11)升降、旋轉、反轉及於X軸方向移動之驅動部23a、及具有將晶粒D吸附保持在先端的吸嘴26a(參照圖11)之拾取頭25a、及使拾取頭25a升降及於X軸方向移動之驅動部27a。在被拾取的晶粒D的正上方設有晶圓辨識相機24,供第一拾取部2a與第二拾取部2b共用。藉由這樣的構成,如圖11所示,拾取翻轉頭21a,基於晶圓辨識相機24的拍攝資料來拾取晶粒D,使拾取翻轉頭21a旋轉180度,使晶粒D的凸塊反轉而面向下面,而將晶粒D設為遞交給拾取頭25a之姿勢。拾取頭25a,從拾取翻轉頭21a接收反轉的晶粒D,載置於第一傳遞平台部3a。The first pick-up
第一傳遞平台部3a,具備暫時地載置晶粒D之傳遞平台31a1,31a2、及底視相機(第一拍攝裝置)34a、及底視修正標記35a。傳遞平台31a1,31a2可藉由未圖示的驅動部而於Y軸方向移動。The first
第一接合部4a相對於被拾取的晶粒D是位於基板供給部6K側。第一接合部4a,從傳遞平台31a1,31a2拾取晶粒D,接合至被搬送而來的基板P上。第一接合部4a,具備接合頭41a、及使接合頭41a於Z軸方向移動之接合頭桌台45a、及使接合頭桌台45a於Y軸方向移動之門型(gantry)桌台(Y樑)43a、及使門型桌台43a於X軸方向移動之一對X樑(未圖示)、及拍攝基板P的位置辨識標記(未圖示)而辨識接合位置之接合相機(第二拍攝裝置)44a。門型桌台43a是以跨於組裝平台BS(參照圖12)上之方式朝Y軸方向延伸而其兩端各自於X軸方向移動自如地被一對X樑支撐。當晶粒D被接合至基板P時,基板P被吸附固定於組裝平台BS。接合相機44a設於接合頭桌台45a。如圖12所示,接合頭41a具備接合頭41a1,41a2,41a3,41a4,各自具有吸嘴42a1,42a2,42a3,42a4而將四個晶粒D吸附保持於先端。
藉由這樣的構成,接合頭41a從傳遞平台31a1,31a2拾取晶粒D,以底視相機34a及接合相機44a拍攝接合頭保持晶粒D的位置。基於此拍攝資料算出接合定位修正位置,移動接合頭而將晶粒D接合至基板P。The
搬送部5,具備供基板P於X軸方向移動之搬送軌道51,52。搬送軌道51,52平行地設置。藉由這樣的構成,從基板供給部6K搬出基板P,沿著搬送軌道51,52移動至接合位置,於接合後移動至基板搬出部6H,將基板P遞交至基板搬出部6H。於將晶粒D接合至基板P當中,基板供給部6K搬出新的基板P,在搬送軌道51,52上待命。基板P從覆晶接合器10的外部被搬入基板供給部6K,載置有晶粒D的基板P從基板搬出部6H被搬出至覆晶接合器10的外部。The transport unit 5 is provided with
控制裝置7,具備存放監視而控制覆晶接合器10的各部的動作之程式(軟體)或資料的記憶裝置(記憶體)、及執行記憶體中存放的程式之中央處理裝置(CPU)。控制裝置7,具備實施形態之控制器101或辨識處理裝置105等。The
如圖13所示,晶圓保持台12,具有保持晶圓環14之擴張環15、及將被保持於晶圓環14而黏著有複數個晶粒D的切割膠帶16予以水平地定位之支撐環17、及用來將晶粒D朝上方頂起之頂起單元13。為了拾取規定的晶粒D,頂起單元13藉由未圖示之驅動機構於上下方向移動,晶粒供給部1於水平方向移動。As shown in FIG. 13, the wafer holding table 12 has an
利用圖14說明底視相機及接合相機的構成。圖14(a)為底視相機的構成示意圖,圖14(b)為接合相機的構成示意圖。The configuration of the bottom-view camera and the joint camera will be described using FIG. 14. Fig. 14(a) is a schematic diagram of the structure of a bottom view camera, and Fig. 14(b) is a schematic diagram of the structure of a bonded camera.
底視相機34a,具備具有相機本體344a與鏡頭344b之拍攝裝置344、及具有擬似同軸照明343a與環型照明343b之照明裝置343。底視相機34a面向上設置以便從正下方拍攝上方的晶粒D。相機本體344a及照明裝置343,如同實施形態之拍攝系統100的相機本體104a及照明裝置103般被控制。亦即,底視相機34a可藉由控制裝置7的指示而以實施形態之頻閃燈1次曝光或頻閃燈多重曝光來拍攝晶粒D。底視相機34b和底視相機34a為相同構成。The
接合相機44a,具備具有相機本體444a與鏡頭444b之拍攝裝置444、及具有擬似同軸照明443a與側方照明443b之照明裝置443。接合相機44a面向下設置以便從上方拍攝下方的底視修正標記35a、晶粒D及基板P。相機本體444a及照明裝置443,如同實施形態之拍攝系統100的相機104a及照明裝置103般被控制。亦即,接合相機44a可藉由實施形態之頻閃燈1次曝光或頻閃燈多重曝光來拍攝底視修正標記35a、晶粒D及基板P。接合相機44b和接合相機44a為相同構成。The bonded
另,晶圓辨識相機24,和接合相機44a為相同構成,惟是藉由一般曝光來拍攝晶圓11(晶粒D),但亦可如同底視相機34a或接合相機44a般置換成可做頻閃燈曝光或頻閃燈多重曝光之系統。In addition, the
利用圖15、16說明運用常時點燈照明而以相機快門做曝光控制之一般曝光的拍攝系統。圖15為一般曝光之拍攝系統的構成示意圖。圖16為圖15的拍攝系統的動作時間點示意圖。Use Fig. 15 and Fig. 16 to explain the general exposure shooting system using constant lighting and the camera shutter for exposure control. Fig. 15 is a schematic diagram of the composition of a general exposure shooting system. FIG. 16 is a schematic diagram of the operation time point of the photographing system of FIG. 15.
一般曝光的拍攝系統100R,具備控制器101、照明電源102a,102b、照明裝置103、具有相機104a與鏡頭104b之拍攝裝置104、及辨識處理裝置105。The
控制器101將照明ON/OFF及照度設定等的控制訊號輸出至照明電源102a,102b,照明電源102a,102b將照明發光電流供給至照明裝置103。照明裝置103由擬似同軸照明103a及側方照明(環型照明或4方向棒狀照明等)103b等所構成。照明裝置103,是使多數個發光二極體以矩陣狀整齊配置而藉由其面發光的光源來照明拍攝對象的工件108。The
照明裝置103係常時點燈或是於辨識曝光前點燈。控制器101將拍攝觸發訊號輸入至相機104a,經曝光延遲時間(Td1)後,相機104a以設定好的曝光時間(Tex3)份量將快門開放而曝光,通過鏡頭104b拍攝拍攝對象的工件108。相機104a的拍攝完成後(曝光結束後,經轉送等待時間(Td2)),相機104a將圖像資料轉送至辨識處理裝置105,辨識處理裝置105基於圖像資料算出位置偏差量等。The
辨識時間(Tr4)和第一實施形態相同而如下式般。 Tr4=Td1+Tex3+Td2+Ttr+Td3+Trc 惟,曝光時間(Tex3)比第一實施形態的曝光時間(Tex1)還長,故辨識時間(Tr3)會比第一實施形態的辨識時間(Tr)還長恰好(Tex3-Tex1)。The recognition time (Tr4) is the same as in the first embodiment and is as follows. Tr4=Td1+Tex3+Td2+Ttr+Td3+Trc However, the exposure time (Tex3) is longer than the exposure time (Tex1) of the first embodiment, so the recognition time (Tr3) will be exactly longer than the recognition time (Tr) of the first embodiment (Tex3-Tex1).
如上述般,於複數個軸同時動作這樣的裝置中,當在辨識拍攝中其他軸動作的情形下,由於動作振動所造成的影響,拍攝出的圖像可能在靜止位置者與正在振動時者會有位置偏差。但,如圖16所示,藉由拉長曝光時間,拍攝圖像中振動所造成的晃動便會被平均化,而可減低振動影響。另,藉由將曝光時間確保在10ms以上,100Hz以上的動作振動會藉由拍攝而被平均化,而可減低振動影響。As mentioned above, in a device where multiple axes are operating at the same time, when recognizing the movement of other axes during shooting, due to the influence of motion vibration, the captured image may be in a static position or when it is vibrating. There will be positional deviation. However, as shown in Figure 16, by extending the exposure time, the shaking caused by the vibration in the captured image will be averaged, and the influence of the vibration can be reduced. In addition, by ensuring that the exposure time is above 10ms, the motion vibration above 100Hz will be averaged by shooting, and the impact of vibration can be reduced.
接著,利用圖17、18說明底視修正。圖17為圖10中從箭頭B方向觀看時,接合頭的動作說明圖,圖17(a)為拍攝第一個接合頭及和其相對應的底視修正標記之狀態示意圖,圖17(b)為拍攝第二個接合頭及和其相對應的底視修正標記之狀態示意圖,圖17(c)為拍攝第三個接合頭及和其相對應的底視修正標記之狀態示意圖,圖17(d)為拍攝第四個接合頭及和其相對應的底視修正標記之狀態示意圖。圖18(a)為接合相機所做的底視修正標記的拍攝圖像示意圖,圖18(b)為底視相機所做的晶粒的拍攝圖像示意圖,圖18(c)為接合相機所做的基板上的參考標記的拍攝圖像。另,圖18的拍攝圖像為便於說明而將外周以黑色、內部以白色表示。Next, the bottom view correction will be explained using FIGS. 17 and 18. Fig. 17 is an explanatory diagram of the operation of the bonding head when viewed from the direction of arrow B in Fig. 10, Fig. 17(a) is a schematic diagram of the state of photographing the first bonding head and its corresponding bottom-view correction mark, Fig. 17(b ) Is a schematic diagram of the state of shooting the second bonding head and its corresponding bottom-view correction mark, Figure 17(c) is a schematic diagram of the state of shooting the third bonding head and its corresponding bottom-view correction mark, Figure 17 (d) is a schematic diagram showing the state of shooting the fourth joint head and its corresponding bottom-view correction mark. Figure 18 (a) is a schematic diagram of the captured image of the bottom view correction mark made by the bonded camera, Figure 18 (b) is a schematic diagram of the captured image of the die made by the bottom view camera, and Figure 18 (c) is the schematic diagram of the captured image of the bottom view camera. The taken image of the reference mark on the made substrate. In addition, in the captured image of FIG. 18, the outer periphery is shown in black and the inner is shown in white for convenience of explanation.
底視修正標記35a係夾著底視相機34a而設於和基板P相反側。如圖17所示,底視修正標記35a,形成為由點光源所成之標記,即,配置在將光遮光的板35a5的下方之LED等的光源35a6~35a9對板35a5所具有的針孔35a1~35a4照射而構成。四個針孔35a1~35a4在和四個吸嘴42a1~42a4相對應之位置配置四個。故,四個針孔35a1~35a4構成四個底視修正標記。另,當參照各個四個底視修正標記的情形下,使用符號35a1~35a4。The bottom
當接合相機44a拍攝底視修正標記35a的情形下,接合相機44a的照明裝置443會熄燈,以免從接合相機44a的照明裝置443發出的光入射至底視相機34a而對底視相機34a的辨識造成影響。藉此,便能減低對於後述的底視相機34a所做的吸嘴42a的拍攝之影響。When the bottom-
接合頭41a及接合相機44a一面於Y軸方向移動,接合相機44a一面拍攝而辨識底視修正標記35a,如圖18(a)所示,辨識初始登錄的底視修正標記35a的位置(標記初始位置)與藉由接合相機44a辨識出的底視修正標記35a的位置之偏差,而算出(dXmark,dYmark)。當將吸嘴42a定位於底視相機34a的中心時,藉由接合相機拍攝底視修正標記35a,計測位置而預先登錄標記初始位置。於接合相機44a所做的底視修正標記35a的拍攝之同時,底視相機34a拍攝而辨識被吸附保持於吸嘴42a的晶粒D的搭載面,如圖18(b)所示,從底視相機34a的中心辨識計測晶粒D的位置而算出(dXdie,dYdie)。從(dXmark,dYmark)與(dXdie,dYdie)的結果,算出相對於底視修正標記35a的位置之被吸附保持於吸嘴42a的晶粒D的位置。The
如圖17所示,針對4個搭載在接合頭41a的吸嘴42a1~42a4,使各自吸附保持的晶粒D移動至底視相機34a上,拍攝晶粒D而辨識位置,針對吸嘴42a1~42a4,於藉由底視相機34a辨識拍攝晶粒D之同時,藉由接合相機44a拍攝辨識各自和藉由底視相機34a辨識的位置相對應之底視修正標記35a1~35a4。以下詳細說明之。As shown in FIG. 17, for the four suction nozzles 42a1 to 42a4 mounted on the
首先,如圖17(a)所示,使被吸附保持於第一個接合頭41a1的吸嘴42a1之晶粒D移動至底視相機34a的上方,拍攝晶粒D而辨識位置,並且針對被吸附保持於吸嘴42a1的晶粒D,藉由接合相機44a拍攝和藉由底視相機34a辨識的位置相對應之底視修正標記35a1而辨識位置。First, as shown in Figure 17(a), the die D sucked and held by the nozzle 42a1 of the first bonding head 41a1 is moved to the top of the bottom-
接著,如圖17(b)所示,使被吸附保持於第二個接合頭41a2的吸嘴42a2之晶粒D移動至底視相機34a的上方,拍攝晶粒D而辨識位置,並且針對被吸附保持於吸嘴42a2的晶粒D,藉由接合相機44a拍攝和藉由底視相機34a辨識的位置相對應之底視修正標記35a2而辨識位置。Next, as shown in FIG. 17(b), the die D sucked and held by the suction nozzle 42a2 of the second bonding head 41a2 is moved to the top of the
接著,如圖17(c)所示,使被吸附保持於第三個接合頭41a3的吸嘴42a3之晶粒D移動至底視相機34a的上方,拍攝晶粒D而辨識位置,並且針對被吸附保持於吸嘴42a3的晶粒D,藉由接合相機44a拍攝和藉由底視相機34a辨識的位置相對應之底視修正標記35a3而辨識位置。Next, as shown in FIG. 17(c), the die D sucked and held by the suction nozzle 42a3 of the third bonding head 41a3 is moved to the top of the bottom-
接著,如圖17(d)所示,使被吸附保持於第四個接合頭41a4的吸嘴42a4之晶粒D移動至底視相機34a的上方,拍攝晶粒D而辨識位置,並且針對被吸附保持於吸嘴42a4的晶粒D,藉由接合相機44a拍攝和藉由底視相機34a辨識的位置相對應之底視修正標記35a4而辨識位置。Next, as shown in FIG. 17(d), the die D sucked and held by the suction nozzle 42a4 of the fourth bonding head 41a4 is moved to the top of the bottom-
底視相機34a所做的晶粒D的位置辨識完成後,如圖17所示,接合頭41a在吸附保持晶粒D之狀態下移動至被吸附固定於組裝平台BS的基板P,在基板P的規定的位置將晶粒D接合。此時,藉由接合相機44a拍攝而辨識設於基板P之參考標記RM,如圖18(c)所示辨識計測從接合相機44a的中心觀看時之基板P上的參考標記RM的位置,而算出(dXRM
、dYRM
)。從此參考標記RM的位置算出接合晶粒D之位置時,會加入相對於先前求出的底視修正標記35a的位置之被吸附保持於吸嘴42a的晶粒D的位置,來算出接合位置。亦即,從欲接合的目標定位座標減去各辨識結果,藉此算出(Xbond,Ybond)。After the position identification of the die D by the bottom-
Xbond=dXRM
-dXdie-dXmark
Ybond=dYRM
-dYdie-dYmark
藉此,便能抵消接合頭的定位誤差、或動作振動所造成的接合頭定位位置的偏差等的影響,而總是以底視修正標記35a為基準來算出晶粒D的位置,而可從參考標記RM契合接合位置。此例中說明了當將頭定位於藉由各吸嘴而接合之位置時,在可藉由接合相機拍攝的視野內設置參考標記RM並辨識它,藉此修正接合位置之手法,但作為於接合時修正定位位置的方法,藉由在欲接合的基板事先設置的校準標記、或在基板上的各接合位置個別設置的標記、或是以已接合完畢的晶粒等作為基準而以接合相機做拍攝辨識計算,而與底視修正標記的辨識結果配合來修正接合位置,也可獲得同樣的效果。Xbond = dX RM- dXdie-dXmark Ybond = dY RM- dYdie-dYmark. By this, it can offset the influence of the positioning error of the bonding head, or the deviation of the bonding head positioning position caused by the action vibration, and always look at the bottom The
接著,利用圖19說明實施例之覆晶接合器中實施的接合方法(半導體裝置的製造方法)。圖19為實施例之覆晶接合器中實施的接合方法示意流程圖。以第一拾取部2a、第一傳遞平台部3a及第一接合部4a側為主旨來說明,惟第二拾取部2b、第二傳遞平台部3b及第二接合部4b側亦相同。另,第二拾取部2b、第二傳遞平台部3b及第二接合部4b,是在不和第一拾取部2a、第一傳遞平台部3a及第一接合部4a干涉的範圍內並行動作。Next, the bonding method (the manufacturing method of the semiconductor device) implemented in the flip chip bonder of the embodiment will be described using FIG. 19. 19 is a schematic flow chart of the bonding method implemented in the flip chip bonder of the embodiment. The description is mainly based on the side of the
當藉由覆晶接合器10製造半導體裝置的情形下,收納著晶圓環14的晶圓匣從覆晶接合器10的外部被供給至晶圓環供給部18。此外,基板P從覆晶接合器10的外部被搬入基板供給部6K。組裝好晶粒D的基板P從基板搬出部6H被搬出至覆晶接合器10的外部。以下說明覆晶接合器10內的動作。In the case of manufacturing a semiconductor device by the
步驟S1:控制裝置7移動晶圓保持台12使得欲拾取的晶粒D位於頂起單元13的正上方,基於晶圓辨識相機24的拍攝資料而將剝離對象晶粒定位於頂起單元13與吸嘴22a。移動頂起單元13使得頂起單元13的上面接觸切割膠帶16的背面。此時,控制裝置7,將切割膠帶16吸附於頂起單元13的上面。控制裝置7,一面將吸嘴22a抽真空一面使其下降,著陸於剝離對象的晶粒D之上,吸附晶粒D。控制裝置7使吸嘴22a上昇,將晶粒D從切割膠帶16剝離。藉此,晶粒D便藉由拾取翻轉頭21a被拾取。Step S1: The
步驟S2:控制裝置7使拾取翻轉頭21a移動。Step S2: The
步驟S3:控制裝置7使拾取翻轉頭21a旋轉180度,使晶粒D的凸塊面(表面)反轉而面向下面,使晶粒D的凸塊(表面)反轉而面向下面,做成將晶粒D遞交至拾取頭25a之姿勢。Step S3: The
步驟S4:控制裝置7藉由拾取頭25a的吸嘴26a而從拾取翻轉頭21a的吸嘴22a拾取晶粒D,進行晶粒D的授受。Step S4: The
步驟S5:控制裝置7,將拾取翻轉頭21a反轉,將吸嘴22a的吸附面面向下。Step S5: The
步驟S6:於步驟S5之前或並行地,控制裝置7將拾取頭25a移動至傳遞平台31a1。Step S6: Before or in parallel with step S5, the
步驟S7:控制裝置7將在拾取頭25a保持著的晶粒D載置於傳遞平台31a1。Step S7: The
步驟S8:控制裝置7使拾取頭25a移動至晶粒D的授受位置。控制裝置7將步驟S1~S8反覆規定次數(實施例中為4次)。Step S8: The
步驟S9:於步驟S8之後或並行地,控制裝置7使傳遞平台31a1移動至與接合頭41a之授受位置。Step S9: After step S8 or in parallel, the
步驟SA:控制裝置7藉由接合相機44a拍攝被保持於傳遞平台31a1的晶粒D,並且藉由接合頭41a的吸嘴42a從傳遞平台31a1集體拾取複數(實施例中為四)個晶粒D,進行晶粒D的授受。Step SA: The
步驟SB:控制裝置7將接合頭41a1,41a2,41a3,41a4的吸嘴42a1,42a2,42a3,42a4保持著的四個晶粒D從傳遞平台31a1移動至基板P上。此時,一面使接合相機44a移動一面拍攝底視修正標記35a,並且藉由底視相機34a拍攝正在移動的四個晶粒D。門型桌台43a於X軸方向移動並且接合頭41a於Y軸方向移動。Step SB: The
步驟SC:控制裝置7藉由接合相機44a拍攝基板,基於藉由接合相機44a拍攝出的底視修正標記35a的資料、藉由底視相機34a拍攝出的晶粒D的資料及藉由接合相機44a拍攝出的基板的資料,將從傳遞平台31a1以接合頭41a1,41a2,41a3,41a4的吸嘴42a1,42a2,42a3,42a4拾取的四個晶粒D集體載置於基板P上。Step SC: The
步驟SD:控制裝置7使接合頭41a1,41a2,41a3,41a4移動至與傳遞平台31a2之授受位置。Step SD: The
步驟SE:控制裝置7使傳遞平台31a1移動至與拾取頭25a之授受位置。Step SE: The
另,上述流程中,雖為使用傳遞平台31a1的例,惟使用傳遞平台31a2的情形下亦相同。In addition, in the above process, although it is an example of using the delivery platform 31a1, the same is true in the case of using the delivery platform 31a2.
覆晶接合器10中,於晶粒及基板的拍攝中,藉由使用10μs程度這樣極短時間的發光頻閃燈,於拍攝對象亦即晶粒及基板的移動中做曝光拍攝(飛時掃描所做的辨識),而可提升生產性,但若為極短時間的頻閃燈1次曝光則會有振動等外擾影響所造成之辨識偏差的影響,而可能對高精度的接合帶來阻礙。在這樣的情形下,藉由本發明提出的事例般的頻閃燈多重曝光,是藉由相機曝光10ms以上,於曝光時間內使頻閃燈發光複數次,減低拍攝時的振動影響所造成的辨識偏差,而能夠抑制辨識修正中含有誤差而精度惡化,可提供高精度的接合動作。In the flip-
以上,已基於實施形態及實施例具體說明了由本發明團隊完成之發明,惟本發明當然不限定於上述實施形態及實施例,而可做種種變更。Above, the invention completed by the present invention team has been specifically explained based on the embodiments and examples, but the present invention is of course not limited to the above-mentioned embodiments and examples, and various changes can be made.
實施形態中,說明了控制器101將拍攝觸發訊號輸出至相機104a的例子,但亦可設計成辨識處理裝置105將曝光開始指令輸出至相機104a,接受曝光開始指令的相機104a開始曝光並且從相機104a輸出照明觸發訊號給頻閃燈照明電源107a,107b。In the embodiment, an example in which the
此外,實施形態及實施例中說明了照明裝置由擬似同軸照明與環型照明所構成的例子,但亦可由擬似同軸照明與環型照明的其中一個照明或另一個照明、將它們組合而成之照明所構成。In addition, the embodiment and the examples illustrate the example of the illuminating device composed of pseudo-coaxial lighting and ring-type lighting, but it can also be composed of one or the other of pseudo-coaxial lighting and ring-type lighting, and combining them. Constituted by lighting.
此外,實施例中說明了接合頭(組裝頭)為四個的例子,但不限定於此,亦可為一或複數個接合頭。In addition, in the embodiment, an example in which there are four bonding heads (assembly heads) is described, but it is not limited to this, and it may be one or more bonding heads.
此外,實施例中說明將反轉機構設置於拾取翻轉頭,藉由傳遞頭從拾取翻轉頭接收晶粒而載置於中間平台,而移動中間平台的例子,但不限定於此,可設計成移動拾取晶粒而反轉之拾取翻轉頭,亦可設計成將拾取的晶粒D載置於能夠將晶粒的表裏旋轉之平台單元,而移動平台單元。In addition, the embodiment describes an example in which the reversing mechanism is set on the pick-up and turn head, and the transfer head receives the die from the pick-up and turn head and places it on the intermediate platform, and moves the intermediate platform, but it is not limited to this, and can be designed as The pick-up and turn head that moves and picks up the die and reverses can also be designed to place the picked-up die D on a platform unit that can rotate the front and back of the die to move the platform unit.
此外,實施例中說明適用覆晶接合器的例子,但不限定於此,亦能適用於將半導體晶片(晶粒)接合於基板等之固晶機或將封裝好的半導體裝置等組裝於基板之晶片貼合機(表面組裝機)等。In addition, the embodiments illustrate examples of applying flip chip bonders, but they are not limited to this. They can also be applied to die bonding machines that bond semiconductor chips (die) to substrates, or to assemble packaged semiconductor devices on the substrates. The chip laminator (surface mounter), etc.
100:拍攝系統 101:控制器 103:照明裝置 104:拍攝裝置 105:辨識處理裝置 107:頻閃燈照明電源 108:工件(拍攝對象)100: shooting system 101: Controller 103: lighting device 104: Camera 105: identification processing device 107: Strobe lighting power supply 108: Workpiece (subject)
[圖1]圖1為第一實施形態之拍攝系統的構成示意圖。 [圖2]圖2為於圖1的拍攝系統的軸動作停止後短時間拍攝的情形下之動作時間點示意圖。 [圖3]圖3為圖1的拍攝系統的發光時間點示意圖。 [圖4]圖4為從圖1的拍攝系統的軸動作停止起算至辨識開始前設立一辨識等待時間而拍攝的情形下之動作時間點示意圖。 [圖5]圖5為於圖1的拍攝系統的軸動作停止後拍攝複數次的情形下之動作時間點示意圖。 [圖6]圖6為第二實施形態之拍攝系統的構成示意圖。 [圖7]圖7為圖6的拍攝系統的動作時間點示意圖。 [圖8]圖8為圖6的拍攝系統的發光時間點示意圖。 [圖9]圖9為第一變形例之拍攝系統的構成示意圖。 [圖10]圖10為實施例之覆晶接合器的概略示意俯視圖。 [圖11]圖11為圖10中從箭頭A方向觀看時,拾取翻轉頭及傳遞頭的動作說明圖。 [圖12]圖12為圖10中從箭頭B方向觀看時,接合頭的動作說明圖。 [圖13]圖13為圖10的晶粒供給部的主要部位示意概略截面圖。 [圖14]圖14(a)為底視相機的構成示意圖,圖14(b)為接合相機的構成示意圖。 [圖15]圖15為一般曝光之拍攝系統的構成示意圖。 [圖16]圖16為圖15的拍攝系統的動作時間點示意圖。 [圖17]圖17為圖10中從箭頭B方向觀看時,接合頭的動作說明圖。 [圖18]圖18為接合相機及底視相機的圖像示意圖。 [圖19]圖19為實施例之覆晶接合器中實施的接合方法示意流程圖。[Fig. 1] Fig. 1 is a schematic diagram of the configuration of the imaging system of the first embodiment. [FIG. 2] FIG. 2 is a schematic diagram of the action time point of the shooting system in FIG. [Fig. 3] Fig. 3 is a schematic diagram of light-emitting time points of the photographing system of Fig. 1. [Fig. [Fig. 4] Fig. 4 is a schematic diagram of the action time point in the case of shooting from the stop of the axis movement of the photographing system of Fig. 1 until a recognition waiting time is established before the recognition starts. [FIG. 5] FIG. 5 is a schematic diagram of the action time point of the shooting system of FIG. [Fig. 6] Fig. 6 is a schematic diagram of the configuration of the imaging system of the second embodiment. [Fig. 7] Fig. 7 is a schematic diagram of the action time point of the photographing system of Fig. 6. [Fig. [Fig. 8] Fig. 8 is a schematic diagram of the light-emitting time point of the photographing system of Fig. 6. [Fig. 9] Fig. 9 is a schematic diagram of the configuration of the imaging system of the first modification. [Fig. 10] Fig. 10 is a schematic plan view of the flip chip bonder of the embodiment. [Fig. 11] Fig. 11 is an explanatory diagram of the operation of the pick-up and reversal head and the transfer head when viewed from the direction of arrow A in Fig. 10; [Fig. 12] Fig. 12 is an explanatory diagram of the operation of the bonding head when viewed from the direction of arrow B in Fig. 10. [Fig. 13] Fig. 13 is a schematic schematic cross-sectional view of a main part of the crystal grain supply part of Fig. 10. [Fig. 14] Fig. 14(a) is a schematic diagram of the structure of a bottom view camera, and Fig. 14(b) is a schematic diagram of the structure of a bonded camera. [Fig. 15] Fig. 15 is a schematic diagram of the structure of a shooting system for general exposure. [FIG. 16] FIG. 16 is a schematic diagram of the operation time point of the photographing system of FIG. 15. [Fig. 17] Fig. 17 is an explanatory diagram of the operation of the bonding head when viewed from the direction of arrow B in Fig. 10. [Fig. 18] Fig. 18 is a schematic diagram of an image of a joined camera and a bottom view camera. [FIG. 19] FIG. 19 is a schematic flowchart of the bonding method implemented in the flip chip bonder of the embodiment.
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