JP2018133353A - Semiconductor manufacturing apparatus and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which places semiconductor chips (dies) with high accuracy on a substrate such as an adhesive sheet which is finally removed.SOLUTION: A semiconductor manufacturing apparatus comprises: a die supply part; a pickup head which picks up the die from the die supply part to invert the die upside down; a bonding head which picks up the die from the pickup head and places the die on a top face of a transparent substrate with a circuit formation surface of the die facing down; a reference mark for recognition of a place of the die when the die is placed on the substrate; a camera for imaging the die and the reference mark from under the substrate; and a lighting unit for irradiating the die and the reference mark with light from obliquely below.SELECTED DRAWING: Figure 5

Description

  The present disclosure relates to a semiconductor manufacturing apparatus and can be applied to a die-place for a fan-out type wafer level package, for example.

  The fan-out type wafer level package (FAN Out Wafer Level Package: FOWLP) is a package in which a rewiring layer is formed in a wide region exceeding the chip area. As a method for manufacturing FOWLP, a plurality of semiconductor chips arranged on an adhesive sheet are collectively sealed with a sealing resin, thereby forming a sealing body including a plurality of semiconductor chips and a sealing resin covering the plurality of semiconductor chips. After that, a method is known in which the pressure-sensitive adhesive sheet is peeled from the sealing body, and then a rewiring layer is formed on the surface on which the pressure-sensitive adhesive sheet of the sealing body has been attached (for example, Japanese Patent Application Laid-Open No. 2014-210909). Publication (Patent Document 1)). In Patent Document 1, a pressure-sensitive adhesive sheet includes a support and a pressure-sensitive adhesive layer laminated on the support, and a semiconductor chip is disposed on the pressure-sensitive adhesive sheet using a flip chip bonder or a die bonder.

JP 2014-210909 A

  An object of the present disclosure is to provide a semiconductor manufacturing apparatus that accurately places a semiconductor chip (die) on a substrate such as an adhesive sheet that is finally peeled off.

An outline of typical ones of the present disclosure will be briefly described as follows.
That is, a semiconductor manufacturing apparatus includes a die supply unit, a pickup head that picks up a die from the die supply unit and flips it upside down, and picks up the die from the pickup head so that a circuit forming surface of the die faces downward. A bonding head for mounting the die on the upper surface of the substrate, a reference mark for recognizing the position of the die when the die is mounted on the substrate, and imaging the die and the reference mark from below the substrate And a lighting device that irradiates light from obliquely below the die and the reference mark.

  According to the semiconductor manufacturing apparatus, it is possible to improve die place accuracy.

1 is a schematic top view of a flip chip bonder according to Embodiment 1. FIG. FIG. 1 is a view for explaining operations of a pickup head and a bonding head when viewed from the direction of arrow A in FIG. Schematic cross-sectional view showing the main part of the die supply unit of FIG. Schematic top view showing the layout of the flip chip bonder of FIG. Sectional drawing for demonstrating the structure and die-place of the workpiece | work of FIG. The flowchart for demonstrating the die-placement method of the flip chip bonder of FIG. The schematic top view which shows the layout of the flip chip bonder which concerns on the modification 1. Schematic top view showing the layout of a flip chip bonder according to Modification 2 Sectional drawing for demonstrating the structure and die-place of the workpiece | work of the flip chip bonder which concerns on the modification 3. Sectional drawing for demonstrating the structure of the work of the flip chip bonder which concerns on the modification 4, and die place Schematic top view of a die bonder according to Embodiment 2 FIG. 11 is a diagram for explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. The flowchart for demonstrating the die-placement method of the die bonder of FIG.

  Hereinafter, examples and modifications will be described with reference to the drawings. However, in the following description, the same components may be denoted by the same reference numerals and repeated description may be omitted. In order to clarify the description, the drawings may be schematically represented with respect to the width, thickness, shape, etc. of each part as compared to the actual embodiment, but are merely examples, and the interpretation of the present invention is not limited to them. It is not limited.

  FIG. 1 is a schematic top view of the flip chip bonder according to the first embodiment. FIG. 2 is a diagram for explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG.

  The flip chip bonder 10 which is a semiconductor manufacturing apparatus is roughly divided into a die supply unit 1, a pickup unit 2, a reversing mechanism unit 3, a bonding unit 4, a transport unit 5, a substrate supply unit 6K, and a substrate carry-out unit 6H. And a control device 7 that monitors and controls the operation of each unit.

  First, the die supply unit 1 supplies a die D to be mounted on a workpiece W such as a substrate. The die supply unit 1 includes a wafer holding table 12 that holds the wafer 11, a push-up unit 13 indicated by a dotted line that pushes up the die D from the wafer 11, and a wafer ring supply unit (not shown). The die supply unit 1 is moved in the XY directions by a driving unit (not shown), and moves the die D to be picked up to the position of the push-up unit 13. The wafer ring supply unit has a wafer cassette in which the wafer ring is stored, and sequentially supplies the wafer ring to the die supply unit 1 and replaces it with a new wafer ring. The die supply unit 1 moves the wafer ring to a pickup point so that a desired die can be picked up from the wafer ring. The wafer ring is a jig that can be attached to the die supply unit 1 on which the wafer is fixed.

  The pickup unit 2 includes a collet unit 22 that attracts the die D from the die supply unit 1, a pickup head 21 that includes the collet unit 22 at the tip and picks up the die D, and a Y drive unit 23 that moves the pickup head 21 in the Y direction. And having. The pickup head 21 has driving units (not shown) that move the collet unit 22 up and down, rotate, and move in the X direction. With such a configuration, the pickup head 21 picks up the die, moves to the reversing mechanism unit 3, and is attracted to the reversing mechanism unit 3.

  As shown by a broken line in FIG. 2, the reversing mechanism unit 3 rotates the pickup head 21 by 180 degrees, reverses the surface (pattern forming surface) of the die D and faces the lower surface, and passes the die D to the bonding head 41. To. As another method of the reversing mechanism unit, as shown in the drawing of FIG. 2, a reversing mechanism unit is provided on the pickup head 21 and moved together with the pickup head, or a stage unit that can rotate the front and back of the die is provided. There is a method of placing the die D once on the stage unit.

  The bonding unit 4 receives the inverted die D from the pickup head 21 and bonds it onto the workpiece W that has been conveyed. The bonding unit 4 includes a bonding head 41 including a collet unit 42 that sucks and holds the die D at the tip, the Y driving unit 43 that moves the bonding head 41 in the Y direction, and a workpiece W position recognition mark. (Reference mark) PM (refer FIG. 4) is imaged, It has the board | substrate recognition camera 44 which recognizes a bonding position, and the oblique illumination apparatus 45 (refer FIG. 4) mentioned later. A substrate recognition camera for inspecting the workpiece W may be provided. With such a configuration, the bonding head 41 receives the inverted die D from the pickup head 21, corrects the pickup position / orientation based on the imaging data of the die recognition camera 33, and based on the imaging data of the substrate recognition camera 44. The die D is bonded to the workpiece W.

  The conveyance unit 5 includes conveyance rails 51 and 52 on which the workpiece W moves in the X direction. The transport rails 51 and 52 are provided in parallel. With such a configuration, the workpiece W is unloaded from the substrate supply unit 6K, moved to the bonding position along the transfer rails 51 and 52, moved to the post-bonding substrate unloading unit 6H, and the workpiece W is transferred to the substrate unloading unit 6H. hand over. During bonding of the die D to the workpiece W, the substrate supply unit 6K carries out a new workpiece W and stands by on the transport rails 51 and 52.

  FIG. 3 is a schematic cross-sectional view showing the main part of the die supply unit. As shown in FIG. 3, the die supply unit 1 horizontally arranges an expanding ring 15 that holds the wafer ring 14 and a dicing tape 16 that is held by the wafer ring 14 and held by the wafer ring 14 to which a plurality of dies D are adhered. A support ring 17 for positioning and a push-up unit 13 for pushing up the die D upward are provided. In order to pick up a predetermined die D, the push-up unit 13 is moved in the vertical direction by a drive mechanism (not shown), and the die supply unit 1 is moved in the horizontal direction.

  The die supply unit 1 lowers the expand ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held on the wafer ring 14 is stretched, and the distance between the dies D is increased. In such a state, the die supply unit 1 improves the pickup property of the die D by pushing up the die D from below the die by the push-up unit 13.

  FIG. 4 is a schematic top view showing the layout of the flip chip bonder of FIG. The flip chip bonder 10 is an apparatus arrangement in which the workpiece W is conveyed in the X direction and the die D is conveyed in the Y direction.

  A wafer ring supply unit 18 is provided on the X-axis negative direction side (left side of the drawing) of the die supply unit 1, and a bonding position BP is provided on the Y-axis positive direction side (upper side of the drawing). The transport rails 51 and 52 extend in the X-axis direction, and the workpiece W moves in the X-axis positive direction (from left to right in the drawing) and is sent to the bonding position BP. The wafer ring 14 is conveyed from the wafer ring supply unit 18 in the positive X-axis direction (from left to right in the drawing) and is sent to the die supply unit 1. The position DP is a position where the pickup head 21 picks up the die D from the die supply unit 1. The position PP is a position where the bonding head 41 picks up the die D from the pickup head 21. The position BP is a position where the bonding head 41 places the die D on the work W, and the position WP is a position where the next work W waits. Although not shown in FIG. 4, the substrate supply unit 6K is disposed on the X-axis negative direction side (left side of the drawing) of the transport rails 51 and 52, and the substrate unloading unit is disposed on the X-axis positive direction side (right side of the drawing). 6H is arranged.

  FIG. 5 is a cross-sectional view for explaining the structure and die place of the work in FIG. 1, and is a view showing the arrangement of the work, die, camera, and illumination at the bonding position. The workpiece W includes a glass substrate 101 that is a carrier having a position recognition mark PM and an adhesive 102 provided on the glass substrate 101, and a plurality of dies can be mounted thereon. A position recognition mark PM matching the package size is formed on the lower surface side of the glass substrate 101. The workpiece W is finally peeled off from the die D, and the glass substrate 101 is used again by re-forming the position recognition mark PM. The die D is attracted to the collet portion 42 with the pattern forming surface facing downward (face-down). The substrate recognition camera 44 is disposed directly below the die D and recognizes the position of the die D through the glass substrate 101 and the adhesive 102. Therefore, the glass substrate 101 and the adhesive 102 are transparent. The plurality of oblique illumination devices 45 respectively irradiate the position recognition mark PM and the die D with light from obliquely below. By the oblique illumination device 45, there is no regular reflection of the glass substrate, and the surface of the position recognition mark PM and the die D can be observed.

  The control device 7 includes a memory that stores a program (software) that monitors and controls the operation of each unit of the flip chip bonder 10 and a central processing unit (CPU) that executes the program stored in the memory. For example, the control device 7 takes in various information such as the substrate recognition camera 44 and image information from the substrate recognition camera 44 and the position of the bonding head 41 and controls each operation of each component such as the bonding operation of the bonding head 41.

  Next, a die-place method (semiconductor device manufacturing method) of the flip chip bonder according to the first embodiment will be described with reference to FIG. FIG. 6 is a flowchart for explaining a die-placement method of the flip chip bonder of FIG.

  Step S <b> 1: The control device 7 picks up the die D from the die supply unit 1 by the pickup head 21.

  Step S2: The control device 7 reverses the pickup head 21 so that the surface (back surface) opposite to the circuit formation surface of the die D faces upward.

  Step S3: The control device 7 delivers the die D to the bonding head 41. That is, the bonding head 41 picks up the die D from the pickup head 21.

  Step S <b> 4: The control device 7 recognizes the position recognition mark PM of the glass substrate 101 by the substrate recognition camera 44.

  Step S5: The control device 7 recognizes the pattern of the circuit formation surface (front surface) of the die D by the substrate recognition camera 44. The oblique illumination is applied through the glass from the bottom, and the edge of the die D is recognized until just before the place. In this case, it is desirable to recognize one field of view simultaneously.

  Step S6: The control device 7 calculates the recognition result. The position recognition mark PM is recognized, the place position is calculated, the die D is recognized, and the die position is calculated.

  Step S7: The control device 7 corrects the position of the die D by moving the bonding head 41 based on the calculation result.

  Step S8: The control device 7 places (places) the die D on the workpiece W.

  Before step S 1, the wafer ring 14 holding the dicing tape 16 to which the die D divided from the wafer 11 is attached is stored in the wafer ring supply unit 18 and carried into the flip chip bonder 10. The control device 7 supplies the wafer ring 14 from the wafer ring supply unit 18 filled with the wafer ring 14 to the die supply unit 1. Also, the workpiece W is prepared and carried into the flip chip bonder 10. The control device 7 places the workpiece W on the transport rails 51 and 52 by the substrate supply unit 6K.

  Further, after step S8, the control device 7 takes out the workpiece W to which the die D is bonded from the transport rails 51 and 52 at the substrate carry-out portion 6H. The workpiece W is unloaded from the flip chip bonder 10. Thereafter, a plurality of dies (semiconductor chips) disposed on the adhesive 102 of the workpiece W are collectively sealed with a sealing resin, thereby providing a plurality of semiconductor chips and a sealing resin covering the plurality of semiconductor chips. After forming the sealing body, the work W is peeled from the sealing body, and then a rewiring layer is formed on the surface of the sealing body on which the work W is attached to manufacture FOWLP.

<Modification>
Hereinafter, some typical modifications will be exemplified. In the following description of the modified examples, the same reference numerals as those in the above-described embodiments can be used for portions having the same configurations and functions as those described in the above-described embodiments. And about description of this part, the description in the above-mentioned Example shall be used suitably in the range which is not technically consistent. In addition, a part of the above-described embodiments and all or a part of the plurality of modified examples can be appropriately combined in a range not technically inconsistent.

(Modification 1)
FIG. 7 is a schematic top view showing the layout of the flip chip bonder according to the first modification. In the first embodiment (FIG. 1), the work W is transported in the X direction and the die D is transported in the Y direction. However, in the flip chip bonder 10A according to the first modification, both the work W and the die D are provided. It is a device arrangement conveyed in the X direction.

  A wafer ring supply unit 18 is provided on the Y-axis negative direction side (lower side of the drawing) of the die supply unit 1, and a bonding position BP is provided on the X-axis positive direction side (right side of the drawing). Transport rails 51 and 52 are provided above the die supply unit 1, and the workpiece W moves in the X-axis positive direction (from left to right in the drawing) and is sent to the substrate stage 46. Thereafter, the substrate stage 46 moves in the positive Y-axis direction (from the bottom to the top of the drawing) and transports the workpiece W to the bonding position BP. The wafer ring 14 is conveyed from the wafer ring supply unit 18 in the positive Y-axis direction (from the bottom to the top of the drawing) and sent to the die supply unit 1. The position DP is a position where the pickup head 21 picks up the die D from the die supply unit 1. The position PP is a position where the bonding head 41 picks up the die D from the pickup head 21. The position BP is a position where the bonding head 41 places the die D on the work W, and the position WP is a position where the next work W waits. Although not shown in FIG. 7, the substrate supply unit 6K is disposed on the X-axis negative direction side (left side of the drawing) of the transport rails 51 and 52, and the substrate unloading unit is disposed on the X-axis positive direction side (right side of the drawing). 6H is arranged.

(Modification 2)
FIG. 8 is a schematic top view showing the layout of the flip chip bonder according to the second modification. In the embodiment (FIG. 1), the work W is transported in the X direction and the die D is transported in the Y direction. However, in the flip chip bonder 10B according to the second modification, the work W is transported in the Y direction. The die D is a device arrangement that is conveyed in the X direction.

  A wafer ring supply unit 18 is provided on the Y-axis negative direction side (lower side of the drawing) of the die supply unit 1, and a bonding position BP is provided on the X-axis positive direction side (right side of the drawing). The workpiece W moves from the workpiece supply / discharge portion 61 in the positive Y-axis direction (from the bottom to the top of the drawing) and is sent to the substrate stage 46. Thereafter, the substrate stage 46 transports the workpiece W to the bonding position BP. After bonding, the substrate stage 46 transports the workpiece W in the negative Y-axis direction (from the top to the bottom of the drawing), and the workpiece W is sent to the workpiece feeding / discharging unit 61. The wafer ring 14 is conveyed from the wafer ring supply unit 18 in the positive Y-axis direction (from the bottom to the top of the drawing) and sent to the die supply unit 1. The position DP is a position where the pickup head 21 picks up the die D from the die supply unit 1. The position PP is a position where the bonding head 41 picks up the die D from the pickup head 21. The position BP is a position where the bonding head 41 places the die D on the work W, and the position WP is a position where the next work W waits. In the modified example 2, since the workpiece supply / discharge unit 61 is arranged on the right side of the wafer ring supply unit 18 instead of the substrate supply unit 6K and the substrate carry-out unit 6H, the die bonder is flattened more than in the first example and the modified example 2. The area can be reduced.

(Modification 3)
FIG. 9 is a cross-sectional view for explaining the work structure and die place of the flip chip bonder according to the third modification, and is a view showing the arrangement of the work, the die, the bonding stage, the camera, and the illumination at the bonding position. In the first embodiment, the work W is formed of a glass substrate, but the work W of the flip chip bonder 10C according to the third modification is formed of a tape.

  The workpiece W according to the modified example 3 includes a tape 103 as a carrier and an adhesive 102 provided on the tape 103, and a plurality of dies can be mounted. The bonding stage BS is composed of a transparent substrate (glass substrate), and a position recognition mark PM is formed on the lower surface side of the glass substrate of the bonding stage BS. The die D is attracted to the collet portion 42 with the pattern forming surface facing downward (face-down). The substrate recognition camera 44 is disposed directly below the die D, and recognizes the position of the die D through the bonding stage BS, the tape 103, and the adhesive 102. Therefore, the tape 103 and the adhesive 102 are transparent. The plurality of oblique illumination devices 45 respectively irradiate the position recognition mark PM and the die D with light from obliquely below. By the oblique illumination device 45, there is no regular reflection of the glass substrate of the bonding stage BS, and the surface of the position recognition mark PM and the die D can be observed.

(Modification 4)
FIG. 10 is a cross-sectional view for explaining a work structure and a die place of a flip chip bonder according to Modification 4, and is a view showing an arrangement of a work, a die, a bonding stage, a camera, and illumination at a bonding position. The workpiece W of the flip chip bonder 10D according to the modified example 4 is configured by the glass substrate 104 as in the first embodiment. However, similarly to the modified example 3, a transparent substrate (glass substrate) is provided below the glass substrate 104 of the workpiece W. ) And a position recognition mark PM is formed on the lower surface side of the glass substrate of the bonding stage BS. Thereby, it is not necessary to form the position recognition mark PM on the glass substrate to be die-placed, and the reproduction is facilitated.

  FIG. 11 is a schematic top view of the die bonder according to the second embodiment. FIG. 12 is a diagram for explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG.

  A die bonder 10E which is a semiconductor manufacturing apparatus is roughly divided into a die supply unit 1, a pickup unit 2E, an intermediate stage unit 3E, a bonding unit 4E, a transport unit 5, a substrate supply unit 6K, and a substrate carry-out unit 6H. And a control device 7 that monitors and controls the operation of each unit.

  The pickup unit 2E includes a pickup head 21 that picks up the die D, a Y drive unit 23 of the pickup head that moves the pickup head 21 in the Y direction, and driving units (not shown) that move the collet unit 22 up and down, rotate, and move in the X direction. And having. The pick-up head 21 has a collet portion 22 (see also FIG. 12) that sucks and holds the pushed-up die D at the tip, picks up the die D from the die supply portion 1, and places it on the intermediate stage 31. The pickup head 21 has driving units (not shown) that move the collet unit 22 up and down, rotate, and move in the X direction. Unlike the first embodiment, the pickup unit 2 of the second embodiment does not have a function of rotating the pickup head 21 180 degrees to reverse the front and back of the die.

  The intermediate stage unit 3E includes an intermediate stage 31 on which the die D is temporarily placed and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31.

  The bonding unit 4E picks up the die D from the intermediate stage 31 and bonds it onto the workpiece W being conveyed. The bonding unit 4E includes a bonding head 41 including a collet unit 42 (see also FIG. 12) for attracting and holding the die D at the tip, similarly to the pickup head 21, a Y driving unit 43 for moving the bonding head 41 in the Y direction, It has a substrate recognition camera 44 that picks up an image of the position recognition mark PM (see FIG. 5) of the workpiece W and recognizes the bonding position, and an oblique illumination device 45 (see FIG. 5). A substrate recognition camera for inspecting the workpiece W may be provided. The configuration of the workpiece W may be any of the configuration of the embodiment (FIG. 5), the modification 3 (FIG. 9), and the modification 4 (FIG. 10). With such a configuration, the bonding head 41 corrects the pickup position / orientation based on the imaging data of the stage recognition camera 32, picks up the die D from the intermediate stage 31, and works based on the imaging data of the substrate recognition camera 44. Bond die D to W.

  Next, a die bonder die placing method (semiconductor device manufacturing method) according to the second embodiment will be described with reference to FIGS. FIG. 13 is a flowchart for explaining a die-placement method of the die bonder of FIG.

  Step S <b> 1: The control device 7 picks up the die D from the die supply unit 1 by the pickup head 21.

  Step S2D: The control device 7 places the die D on the intermediate stage 31 by the pickup head 21.

  Step S3D: The control device 7 delivers the die D to the bonding head 41. That is, the bonding head 41 picks up the die D from the intermediate stage 31.

  Step S <b> 4: The control device 7 recognizes the position recognition mark PM of the glass substrate 101 by the substrate recognition camera 44.

  Step S5: The control device 7 recognizes the edge of the die D by the substrate recognition camera 44. The oblique illumination is applied through the glass from the bottom, and the edge of the die D is recognized until just before the place. In this case, it is desirable to recognize one field of view simultaneously.

  Step S6: The control device 7 calculates the recognition result. The position recognition mark PM is recognized, the place position is calculated, the die D is recognized, and the die position is calculated.

  Step S7: The control device 7 corrects the position of the die D by moving the bonding head 41 based on the calculation result.

  Step S8: The control device 7 places (places) the die D on the workpiece W.

  The operation before step S1 is the same as the operation in the first embodiment. Further, the operation of taking out and carrying out the workpiece W after bonding is the same as that in the first embodiment. FOWLP is manufactured in the same manner as in Example 1.

  In the embodiment and the modified example, when the workpiece is a glass substrate, a mark (position recognition mark) of a fixed package size is attached to the workpiece or a stage that ensures transparency, and when the workpiece is a tape, the transparency is secured to the stage. Mark the package size. As a result, it is possible to recognize and mount the workpiece over the workpiece, and to recognize and correct the die position until immediately before the place. Therefore, the die can be accurately placed on the glass or tape to be finally peeled. If the workpiece is glass, the position recognition mark can be accurately manufactured and reused.

  In the case of face down, alignment can be performed by recognizing the pattern on the die surface through the glass. Thereby, the accuracy of the reference for placing can be kept higher. By improving the accuracy of the place, the FOWLP rewiring layer can be facilitated.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments and the modified examples. However, the present invention is not limited to the above-described embodiments and modified examples, and various modifications can be made. Not too long.

  For example, in the embodiment, the position recognition mark PM is formed on the lower surface side of the glass substrate, but the position recognition mark PM may be temporarily formed by laser light irradiation or the like to perform position recognition of the die D. . As a result, it is not necessary to form the position recognition mark PM on the glass substrate to be die-placed, and the reproduction is easy, and the die size and the die place position can be changed by changing the laser irradiation position data by changing the product type. Work can be simplified.

  In addition, the position recognition mark PM on the lower surface side of the glass substrate is not a transparent glass apparatus stage made of transparent glass for each product type, but a substrate made of transparent glass for a workpiece made of a die or a tape. The position recognition substrate may be used. Thereby, when exchanging the product type, the position recognition board can be exchanged easily, and automatic exchange or the like is facilitated.

  The position recognition substrate may be the glass substrate to be die-placed in the embodiment.

1: Die supply unit
2: Pickup unit 21: Pickup head
22: Collet part 3: Reversing mechanism part 4: Bonding part
41: Bonding head 42: Collet part
44: substrate recognition camera 45: oblique illumination device 7: control device 10: flip chip bonder
10E: Die bonder 11: Wafer 13: Push-up unit
D: Die W: Workpiece 101: Glass substrate 102: Adhesive 103: Tape 104: Glass substrate PM: Position recognition mark BS: Bonding stage

Claims (18)

Semiconductor manufacturing equipment
A die supply unit;
A pickup head that picks up a die from the die supply unit and flips it upside down;
A bonding head that picks up the die from the pickup head and places the die on the upper surface of a transparent substrate with the circuit forming surface of the die facing down;
A reference mark for recognizing the position of the die when the die is placed on the substrate;
A camera that images the die and the reference mark from below the substrate;
An illumination device for irradiating light from obliquely below the die and the reference mark;
Is provided. The semiconductor manufacturing apparatus according to claim 1.
The substrate comprises a glass substrate and an adhesive provided on the upper surface of the glass substrate,
The reference mark is provided on the lower surface side of the glass substrate. 2. The semiconductor manufacturing apparatus according to claim 1, further comprising:
Comprising a transparent stage located above the camera;
The substrate comprises a tape and an adhesive provided on the upper surface of the tape,
The reference mark is provided on the lower surface of the stage. 2. The semiconductor manufacturing apparatus according to claim 1, further comprising:
A wafer ring supply unit for storing the wafer ring;
A substrate supply unit;
A substrate unloading section;
With
The wafer ring is conveyed from the wafer ring supply unit in the first direction and sent to the die supply unit,
The substrate is conveyed from the substrate supply unit in the first direction and sent to a bonding position;
The die is conveyed in a second direction different from the first direction and sent to a bonding position;
The substrate on which the die is placed is conveyed in the first direction from the bonding position and sent to the substrate carry-out unit. 2. The semiconductor manufacturing apparatus according to claim 1, further comprising:
A wafer ring supply unit for storing the wafer ring;
A substrate supply unit;
A substrate unloading section;
With
The substrate is conveyed in the first direction from the substrate supply unit and sent to the bonding position,
The die is conveyed in the first direction and sent to the bonding position;
The substrate on which the die is placed is transported in the first direction from the bonding position and sent to the substrate unloading unit,
The wafer ring is conveyed from the wafer ring supply unit in a second direction different from the first direction and sent to the die supply unit. 2. The semiconductor manufacturing apparatus according to claim 1, further comprising:
A wafer ring supply unit for storing the wafer ring;
A substrate supply / discharge unit,
With
The die is conveyed in the first direction and sent to the bonding position,
The wafer ring is conveyed from the wafer ring supply unit in a second direction different from the first direction and sent to the die supply unit,
The substrate is transported in the second direction from the substrate supply / discharge portion and sent to the bonding position.
The substrate on which the die is placed is conveyed from the bonding position in a direction opposite to the second direction and sent to the substrate supply / discharge unit. Semiconductor manufacturing equipment
A die supply unit;
A pickup head for picking up the die from the die supply unit;
An intermediate stage on which a die picked up by the pickup head is placed;
A bonding head that picks up the die from the intermediate stage and places the die on the upper surface of a transparent substrate with the circuit forming surface of the die facing up;
A reference mark for recognizing the position of the die when the die is placed on the substrate;
A camera that images the die and the reference mark from below the substrate;
An illumination device for irradiating light from obliquely below the die and the reference mark;
Is provided. The semiconductor manufacturing apparatus according to claim 7.
The substrate comprises a glass substrate and an adhesive provided on the upper surface of the glass substrate,
The reference mark is provided on the lower surface side of the glass substrate. 8. The semiconductor manufacturing apparatus according to claim 7, further comprising:
Comprising a transparent stage located above the camera;
The substrate comprises a tape and an adhesive provided on the upper surface of the tape,
The reference mark is provided on the lower surface of the stage. The semiconductor manufacturing apparatus according to claim 7.
The substrate comprises a glass substrate and an adhesive provided on the upper surface of the glass substrate,
Comprising a transparent stage located above the camera;
The reference mark is provided on the lower surface of the stage. The manufacturing method of the semiconductor device is as follows:
(A) preparing a semiconductor manufacturing apparatus comprising: a camera that images a die and a reference mark; and an illumination device that irradiates light from obliquely below the die and the reference mark;
(B) preparing a wafer ring for holding a dicing tape having a die;
(C) providing a glass substrate and a pressure-sensitive adhesive provided on the upper surface of the glass substrate, and preparing a substrate provided with the reference mark on the lower surface side of the glass substrate;
(D) picking up a die from the wafer ring;
(E) placing the picked-up die on the substrate;
With
In the step (e), the picked-up die is placed on the upper surface of the substrate while the picked-up die and the reference mark are imaged from below the substrate by the camera. In the manufacturing method of the semiconductor device of Claim 11,
The step (d) further includes a step of turning the picked die upside down.
In the step (e), the inverted die is picked up and placed on the substrate with the circuit formation surface of the die down. In the manufacturing method of the semiconductor device of Claim 11,
The step (d) further includes a step of placing the picked-up die on an intermediate stage,
In the step (e), the die is picked up from the intermediate stage, and the circuit forming surface of the die is placed on the substrate. In the manufacturing method of the semiconductor device of Claim 12 or 13,
In the step (e), the position of the picked-up die is corrected based on the recognition result of the camera and placed on the substrate. The manufacturing method of the semiconductor device is as follows:
(A) preparing a semiconductor manufacturing apparatus comprising: a camera that images a reference mark provided on a die and a bonding stage; and an illumination that irradiates light from obliquely below the die and the reference mark;
(B) preparing a wafer ring for holding a dicing tape having a die;
(C) preparing a substrate comprising a tape and an adhesive provided on the upper surface of the tape;
(D) picking up a die from the wafer ring;
(E) placing the picked-up die on the substrate;
With
In the step (e), the picked-up die is placed on the upper surface of the substrate while the picked-up die and the reference mark are imaged from below the substrate by the camera. In the manufacturing method of the semiconductor device of Claim 15,
The step (d) further includes a step of turning the picked die upside down.
In step (e), the inverted die is picked up. In the manufacturing method of the semiconductor device of Claim 15,
The step (d) further includes a step of placing the picked-up die on an intermediate stage,
In the step (e), the die is picked up from the intermediate stage. In the manufacturing method of the semiconductor device of Claim 16 or 17,
In the step (e), the position of the picked-up die is corrected based on the recognition result of the camera and placed on the substrate.

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