TW202044438A - 針狀線成形方法以及打線接合裝置 - Google Patents
針狀線成形方法以及打線接合裝置 Download PDFInfo
- Publication number
- TW202044438A TW202044438A TW109111047A TW109111047A TW202044438A TW 202044438 A TW202044438 A TW 202044438A TW 109111047 A TW109111047 A TW 109111047A TW 109111047 A TW109111047 A TW 109111047A TW 202044438 A TW202044438 A TW 202044438A
- Authority
- TW
- Taiwan
- Prior art keywords
- wire
- bonding
- joining
- needle
- tool
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/13124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78268—Discharge electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
- H01L2224/78601—Storing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/789—Means for monitoring the connection process
- H01L2224/78901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
本發明提供一種可抑制半導體元件的損傷的針狀線的成形方法。本發明的針狀線的成形方法包括:彎折線成形步驟S101,使自前端延伸出尾線的瓷嘴朝向基準面傾斜地下降,將尾線向沿著基準面的方向彎折而成形彎折線;立起線成形步驟S102,於在瓷嘴的前端與基準面之間夾持彎折線的狀態下使瓷嘴橫向移動,使彎折線向上方立起而成形立起線;接合步驟S103,將立起線接合於接合位置;以及線切斷步驟S104,將穿插至瓷嘴的線切斷而將立起線製成針狀線。
Description
本發明是有關於一種於基板或半導體元件之上成形針狀的線的方法以及成形針狀線的打線接合裝置。
近年來,正使用積層有半導體封裝體的半導體裝置、或積層有半導體元件的半導體裝置。此種三維封裝半導體裝置中,需要於基板或半導體元件的電極之上成形具有既定的高度的針狀的線。
作為成形此種針狀線的方法,提出有下述方法,即:於接合位置進行球形接合(ball bonding)後,於與接合位置不同的位置將線彎弧(looping)並按壓線的側面而於線的側面成形缺口,然後使線於接合位置直立,於缺口位置將線切斷(例如參照專利文獻1)。
另外,提出有下述方法,即,同樣地於線的側面成形薄壁部,然後使線於接合位置直立後,使接合工具橫向移動後將線切斷(例如參照專利文獻2)。
[現有技術文獻]
[專利文獻]
[專利文獻1]日本專利第6297553號公報
[專利文獻2]日本專利第5686912號公報
[發明所欲解決之課題]
專利文獻1、專利文獻2所記載的現有技術的方法如下,於接合位置進行球形接合後,於與接合位置不同的位置將線彎弧並按壓線的側面而於線的側面成形缺口或薄壁部,使線直立後,於所述缺口或薄壁部將線切斷而成形針狀線。為了於線的側面成形缺口或薄壁部,需要以某種程度的力將線按壓於半導體元件的電極以外的位置。因此,於利用專利文獻1、專利文獻2所記載的現有技術在半導體元件的電極之上成形針狀線的情形時,有損傷半導體元件的可能性。另外,於接合位置的附近需要成形缺口部或薄壁部的空間,故而有難以適用於小型且電極間距窄的半導體元件的問題。
因此,本發明的目的在於提供一種省空間且可抑制半導體元件的損傷的針狀線的成形方法。
[解決課題之手段]
本發明的針狀線成形方法為使用穿插有線的接合工具於基板或半導體元件的接合位置成形針狀的線的針狀線成形方法,其中包括:彎折線成形步驟,使自前端延伸出既定的長度的線的接合工具朝向基準面傾斜地下降,使線的下端接觸基準面並將線向沿著基準面的方向彎折而成形彎折線;立起線成形步驟,於在接合工具的前端與基準面之間夾持彎折線的狀態下,使接合工具朝向與彎折線的延伸方向相反的方向橫向移動,使彎折線沿著接合工具向上方立起而成形立起線;接合步驟,使接合工具移動至基板或半導體元件的接合位置之上,將立起線接合於接合位置;以及線切斷步驟,使接合工具上升並將穿插於接合工具的線切斷,藉此將立起線製成自接合位置豎起的針狀線。此處,基準面亦可為基板的表面或半導體元件的表面。
如此,使線的下端接觸基準面並將線向沿著基準面的方向彎折而成形彎折線,將經彎折的線夾持於接合工具的前端與基準面之間並使接合工具橫向移動,使彎折線向上方立起而成形立起線,將所成形的立起線接合於接合位置,故而無需將線按壓於半導體元件的電極以外的位置,可抑制成形針狀線的情形的半導體元件的損傷。另外,可於與接合位置遠離的位置進行線的彎折、立起,故而能夠以少的空間進行針狀線的成形。
於本發明的針狀線成形方法中,彎折線成形步驟亦能夠以隨著使接合工具下降而接合工具的移動方向與基準面所成的角度變小的方式,使接合工具朝向基準面傾斜地下降。
藉此,可順利地將線彎折。
於本發明的針狀線成形方法中,接合步驟亦可使接合工具的中心位置自接合位置的中心位置偏離並進行接合。
藉此,可於接合位置的中心成形針狀線。
於本發明的針狀線成形方法中,於彎折線成形步驟之前,包括:壓接球成形步驟,使接合工具朝向接合位置下降,將使前端成形為無空氣球的線接合於接合位置而成形壓接球;以及凸塊成形步驟,一邊自接合工具的前端抽出線一邊使接合工具上升後,將抽出的線於壓接球之上折回,進行按壓而成形凸塊,接合步驟亦可將立起線接合於凸塊之上。
將立起線接合於壓接球、凸塊之上,故而可更合適地抑制半導體元件的損傷。
於本發明的針狀線成形方法中,凸塊成形步驟亦可將抽出的線於壓接球之上折回,使接合工具的中心位置自接合位置偏離並按壓線,成形於上表面具有凹部的凸塊,接合步驟以立起線的根部對準凸塊的凹部的方式使接合工具的中心位置自接合位置偏離並進行接合。
如此,藉由將立起線的根部對準凸塊的凹部並進行接合,從而可更垂直地成形針狀線。
於本發明的針狀線成形方法中,彎折線成形步驟亦可使自前端延伸出既定的長度的線的接合工具朝向基板的表面或半導體元件的表面傾斜地下降,使線的下端接觸凸塊並將線向沿著基板的表面或半導體元件的表面的方向彎折而成形彎折線。
藉此,能以更少的空間進行針狀線的成形。
本發明的打線接合裝置使用穿插有線的接合工具於基板或半導體元件的接合位置成形針狀的線,其包括:控制部,調整接合工具位置,控制部執行:彎折線成形步驟,使自前端延伸出既定的長度的線的接合工具朝向基準面傾斜地下降,使線的下端接觸基準面並將線向沿著基準面的方向彎折而成形彎折線;立起線成形步驟,於在接合工具的前端與基準面之間夾持彎折線的狀態下,使接合工具朝向與彎折線的延伸方向相反的方向橫向移動,使彎折線向上方立起而成形立起線;接合步驟,使接合工具移動至基板或半導體元件的接合位置之上,將立起線接合於接合位置;以及線切斷步驟,使接合工具上升並將穿插於接合工具的線切斷,藉此將立起線製成自接合位置豎起的針狀線。
[發明的效果]
本發明提供一種省空間且可抑制半導體元件的損傷的針狀線的成形方法。
以下,一面參照圖式一面對實施形態的打線接合裝置1進行說明。如圖1所示,本實施形態的打線接合裝置1包括:基台2、XY台3、接合頭4、火炬電極(torch electrode)5、瓷嘴10、超音波喇叭6、夾頭15、線張力器8、旋轉閥芯9、接合平台60、加熱器61以及控制部70。
以下的實施形態中,將與成為接合對象的半導體元件50(例如半導體晶片)或引線框架或者基板平行的平面設為XY平面,將垂直於XY平面的方向設為Z方向。瓷嘴10的前端位置是以X座標、Y座標及Z座標所表示的空間座標(X,Y,Z)來確定。
基台2是可滑動地載置XY台3而構成。XY台3為基於來自控制部70的驅動訊號而可使瓷嘴10於XY平面移動至既定的位置的移動裝置。
接合頭4為與接合臂(未圖示)一體地形成,基於來自控制部70的驅動訊號而以安裝於超音波喇叭6的前端部的瓷嘴10的前端12於基板等工件62的表面接離的方式於Z方向可移動地進行保持的移動裝置。
超音波喇叭6為自末端向前端包含末端部、凸緣部、喇叭部及前端部的各部的棒狀構件。末端部配置有根據來自控制部70的驅動訊號而振動的超音波振盪器7。凸緣部於成為超音波振動的波節的位置經由接合臂可共振地安裝於接合頭4。喇叭部為與末端部的直徑相比長長地延伸的臂,包括將由超音波振盪器7所得的振動的振幅放大並傳遞至前端部的結構。前端部成為可更換地保持瓷嘴10的安裝部。超音波喇叭6包括整體與超音波振盪器7的振動共振的共振結構,構成為超音波振盪器7及凸緣位於共振時的振動的波節,瓷嘴10位於振動的波腹般的結構。藉由該些構成,超音波喇叭6作為將電氣驅動訊號變換為機械振動的換能器(transducer)發揮功能。
瓷嘴10為用於接合的接合工具之一。於瓷嘴10設有穿插孔,穿插有用於接合的線20。瓷嘴10可更換地安裝於超音波喇叭6的前端部。
夾頭15包括基於控制部70的控制訊號進行開閉動作的壓電元件,以可於既定的時機握持或釋放線20的方式構成。
線張力器8穿插有線20,以基於控制部70的控制訊號而自如地變更對線20的張力,藉此能夠以對接合中的線20給予適度的張力的方式構成。
旋轉閥芯9可更換地保持捲繞有線20的捲盤(reel),以根據通過線張力器8所波及的張力而抽出線20的方式構成。再者,線20的材料是根據加工的容易度及低電阻而選擇。通常可使用金(Au)、銀(Ag)、鋁(Al)或銅(Cu)等。
火炬電極5經由未圖示的放電穩定電阻而連接於未圖示的高電壓電源,以基於來自控制部70的控制訊號而產生火花(放電),藉由火花的熱而能夠以於自瓷嘴10的前端12抽出的線20的下端22成形無空氣球30的方式構成。
接合平台60為將用以成形針狀線25(參照圖6、圖10)的工件62(例如基板或半導體元件50等)載置於加工面的平台。於接合平台60的加工面的下部設有加熱器61,以可將工件62加熱至適於接合的溫度的方式構成。另外,於接合平台60的上表面,配置有基準面40。
控制部70以基於既定的軟體程式而可輸出控制打線接合裝置1的各種控制訊號的方式構成。具體而言,作為並無限定的例示,控制部70進行以下的控制。
(1)基於來自未圖示的位置檢測感測器的檢測訊號而確定瓷嘴10的前端12的空間位置(X,Y,Z),將使瓷嘴10的前端12向由所述程式規定的空間位置移動的驅動訊號輸出至XY台3及接合頭4。藉此,控制部70調整瓷嘴10的前端12的位置。
(2)於向接合點進行接合時,將產生超音波振動的控制訊號輸出至超音波喇叭6的超音波振盪器7。
(3)輸出以成為由所述程式規定的線20的抽出狀況的方式控制夾頭15的開閉動作的控制訊號。具體而言,於抽出線20時將夾頭15設為釋放狀態,於在線20成形彎曲點的情形或切斷的情形時將夾頭15設為閉狀態。
(4)於尾線21的下端22成形無空氣球30時,輸出用於使火炬電極5放電的控制訊號。
再者,所述打線接合裝置1的構成為例示,不限定於所述構成。例如,於X方向、Y方向或Z方向移動的移動裝置亦可設於接合平台60側,另外亦可設於打線接合裝置1側及接合平台60側兩者。
繼而,一面參照圖2~圖6,一面對實施形態的打線接合裝置1執行的針狀線25(參照圖6、圖10)的成形方法進行說明。如圖2的步驟S101~步驟S104所示,實施形態的針狀線成形方法包含彎折線成形步驟、立起線成形步驟、接合步驟及線切斷步驟的四個步驟。
控制部70最初執行圖2的步驟S101所示的彎折線成形步驟。控制部70如圖3的(a)所示,使既定的長度的尾線21自瓷嘴10的前端12延伸出。關於尾線21的延伸出,例如亦可由控制部70將線20接合於任意的位置,將夾頭15設為開而自瓷嘴10的前端12以既定的長度抽出線20後,將夾頭15設為閉並使瓷嘴10及夾頭15上升,於接合點將線20切斷而成形。另外,亦可包括多個夾頭15,將多個夾頭15的開閉與瓷嘴10的上下動作組合,自瓷嘴10的前端12以既定的長度抽出線20。
繼而,控制部70如圖3的(a)至圖3的(h)所示,於將夾頭15設為閉的狀態下,使瓷嘴10的前端12朝向基準面40逐漸傾斜地下降。此處,基準面40既可為如圖1所示的配置於接合平台60的上表面的平面,亦可為載置於接合平台60之上的基板或半導體元件50的表面。以下的例子中,設基準面40為配置於接合平台60的上表面的平面而進行說明。
控制部70如圖3的(a)~圖3的(h)所示,執行彎折線成形步驟,即,一邊使自前端12延伸出的尾線21的下端22接觸基準面40一邊使瓷嘴10的前端12傾斜地向下方移動,並將尾線21彎折而成形彎折線23。
首先,控制部70如圖3的(a)~圖3的(c)所示,於將夾頭15設為閉的狀態下,以與基準面40所成的角度成為角度θ1的方式,沿著一點鏈線91使瓷嘴10的前端12逐漸傾斜地向下方移動。此時,控制部70使尾線21的下端22接觸基準面40,一邊將尾線21向沿著基準面40的方向彎折一邊使瓷嘴10的前端12逐漸傾斜地向下方移動。
繼而,控制部70如圖3的(c)~圖3的(e)所示,於將夾頭15設為閉的狀態下,以與基準面40所成的角度成為小於角度θ1的角度θ2的方式,沿著一點鏈線92使瓷嘴10的前端12傾斜地向下方移動,使尾線21進一步向沿著基準面40的方向逐漸彎折。
進而,控制部70如圖3的(e)~圖3的(h)所示,於將夾頭15設為閉的狀態下,以與基準面40所成的角度成為小於角度θ2的角度θ3的方式,沿著一點鏈線93使瓷嘴10的前端12傾斜地向下方移動,使尾線21進一步向沿著基準面40的方向逐漸彎折。繼而,如圖3的(h)所示,將尾線21彎折成大致直角直至尾線21的下端22成為沿著基準面40的方向為止,成形彎折線23。
如此,控制部70以隨著使瓷嘴10下降而瓷嘴10的前端12的移動方向與基準面40所成的角度θ1~角度θ3變小的方式,使瓷嘴10的前端12朝向基準面40傾斜地下降而成形彎折線23。控制部70如圖3的(h)所示般成形彎折線23後,結束彎折線成形步驟。
繼而,控制部70如圖2的步驟S102所示般執行立起線成形步驟。控制部70如圖4的(a)、圖4的(b)所示,於將彎折線23夾持於瓷嘴10的前端12與基準面40之間的狀態下,使瓷嘴10的前端12橫向移動,使彎折線23向上方立起而成形立起線24。
控制部70於結束彎折線成形步驟後,如圖4的(a)所示,於將夾頭15設為閉的狀態下,使瓷嘴10的前端12如圖4的(a)的箭頭94所示般稍許下降,於瓷嘴10的前端12與基準面40之間夾持彎折線23的根部分。繼而,控制部70於將夾頭15設為閉的狀態下,如圖4的(b)中箭頭95所示,使瓷嘴10的前端12朝向與彎折線23的延伸方向相反的方向橫向移動。於是,如圖4的(b)的箭頭96所示,隨著瓷嘴10橫向移動而彎折線23向上方立起,成形立起線24。
控制部70如圖4的(b)所示般成形立起線24後,結束立起線成形步驟。
繼而,控制部70如圖2的步驟S103所示般執行接合步驟。控制部70如圖5的(a)、圖5的(b)所示,使瓷嘴10自基準面40移動至作為半導體元件50的接合位置的電極51之上,將立起線24接合於電極51之上。
控制部70如圖5的(a)所示,使瓷嘴10自基準面40移動至作為接合位置的半導體元件50的電極51之上。繼而,控制部70將瓷嘴10的Z方向的中心線19的位置設為自電極51的Z方向的中心線52的位置於橫向偏離距離d的位置。繼而,控制部70於將夾頭15設為閉的狀態下,如圖5的(b)中的箭頭99所示,使瓷嘴10下降而將立起線24的根部接合於電極51之上。
若將立起線24接合於電極51之上,則立起線24如圖5的(b)中的箭頭98所示般沿大致垂直方向立起,於電極51的中心位置成形為於大致沿著中心線52的方向延伸的針狀線25。
控制部70接合立起線24而成形針狀線25後,結束接合步驟,如圖2的步驟S104所示般執行線切斷步驟。
控制部70於如圖6中虛線所示般將夾頭15設為開的狀態下,使瓷嘴10上升,使尾線21自前端12延伸出既定的長度。繼而,控制部70如圖6中實線所示,將夾頭15設為閉而使夾頭15及瓷嘴10如箭頭100般上升,將穿插於瓷嘴10的尾線21的下端22切斷。藉此,控制部70於電極51的中心線52之上成形獨立的針狀線25。
控制部70結束線切斷步驟後,使瓷嘴10移動至基準面40之上。繼而,控制部70於圖2的步驟S105中判斷是否進行了所有針狀線25的成形,於圖2的步驟S105中判斷為否的情形時,回到圖2的步驟S101,重複執行圖2的步驟S101及圖3的(a)~圖3的(h)所示的彎折線成形步驟、圖2的步驟S102以及圖4的(a)及圖4的(b)所示的立起線成形步驟、圖2的步驟S103以及圖5的(a)及圖5的(b)所示的接合步驟、以及圖2的步驟S104及圖6所示的線切斷步驟。另外,若於圖2的步驟S105中判斷為是,則結束針狀線25的成形。
以上說明的實施形態的針狀線成形方法如下,使尾線21的下端22接觸基準面40,使尾線21向沿著基準面40的方向彎折而成形彎折線23,於瓷嘴10的前端12與基準面40之間夾持彎折線23並使瓷嘴10橫向移動,使彎折線23向上方立起而成形立起線24,將所成形的立起線24接合於作為接合位置的半導體元件50的電極51,故而無需如現有技術般將線20按壓於半導體元件50的電極51以外的位置,可抑制成形針狀線25的情形的半導體元件50的損傷。另外,可於與半導體元件50的電極51遠離的位置進行尾線21的彎折、立起,故而即便於半導體元件50的表面的面積小的情形時,亦可進行針狀線25的成形。
以上說明的實施形態的針狀線成形方法中,於彎折線成形步驟中,設為下述情況進行了說明,即,以隨著使瓷嘴10下降而瓷嘴10的前端12的移動方向與基準面40所成的角度θ1~角度θ3變小的方式,使瓷嘴10的前端12朝向基準面40傾斜地下降而成形彎折線23,但不限於此,亦可使瓷嘴10的前端12以一定的角度朝向基準面40傾斜地下降而成形彎折線23。
另外,於接合步驟中,設為下述情況進行了說明,即,控制部70使瓷嘴10的中心線19的位置自電極51的中心線52的位置偏離並進行接合,但不限於此,控制部70亦可將瓷嘴10的中心線19的位置對準電極51的中心線52的位置並進行接合。
繼而,一面參照圖7~圖10以及圖3的(a)~圖3的(h)、圖4的(a)及圖4的(b),一面對其他實施形態的針狀線成形方法進行說明。關於與上文中參照圖2~圖6所說明的實施形態同樣的部分,省略說明。
其他實施形態的針狀線成形方法中,控制部70於圖7的步驟S101所示的彎折線成形步驟之前,執行圖7的步驟S201及圖8的(a)~圖8的(b)所示的壓接球成形步驟、圖7的步驟S202及圖8的(c)~圖8的(e)所示的凸塊成形步驟。
於圖2的步驟S201所示的壓接球成形步驟中,控制部70如圖8的(a)所示,使瓷嘴10移動至火炬電極5的附近,於火炬電極5與自瓷嘴10的前端12延伸出的尾線21之間產生放電而將尾線21成形為無空氣球30。無空氣球30由設於瓷嘴10的中心的孔的前端的倒角部13保持。繼而,控制部70如圖8的(b)所示,使瓷嘴10的Z方向的中心線19的位置對準半導體元件50的電極51的Z方向的中心線52,於將夾頭15設為開的狀態下,如箭頭101所示般使瓷嘴10下降。繼而,控制部70利用瓷嘴10將無空氣球30接合於半導體元件50的電極51之上。無空氣球30的周邊部被前端12按壓而成為圓盤狀,中央部被倒角部13按壓而成形為較圓盤狀的周邊部稍向上突出的台座形狀的壓接球31。
如圖8的(b)所示,控制部70在壓接球31的成形結束後,執行圖7的步驟S202、圖8的(c)~圖8的(e)所示的凸塊成形步驟。
於圖2的步驟S202所示的凸塊成形步驟中,控制部70如圖8的(c)的箭頭102所示,於將夾頭15設為開的狀態下,使瓷嘴10上升而使線20自前端12延伸出後,橫向移動距離e,然後使瓷嘴10稍許下降。繼而,如圖8的(d)的箭頭103所示,控制部70使瓷嘴10上升至原本的高度後,使瓷嘴10向與圖8的(c)所示的情形相反的方向橫向移動距離(e+f),使瓷嘴10下降。藉由所述動作,控制部70使延伸出的線20於半導體元件50的電極51之上左右折回,利用前端12將折回的線20按壓於下側的線20之上,如圖8的(d)所示,成形一側鼓起且經前端12按壓的另一側成為凹部36的凸塊35。
控制部70成形凸塊35後,於如圖8的(e)中虛線所示般將夾頭15設為開的狀態下,使瓷嘴10上升而使既定的長度的尾線21自瓷嘴10的前端12延伸出。繼而,控制部70於如圖8的(e)中實線所示般將夾頭15設為閉的狀態下,使瓷嘴10及夾頭15如圖8的(a)~圖8的(e)所示的箭頭104般上升,將尾線21的下端22切斷。
繼而,控制部70如圖7的步驟S101、圖3的(a)~圖3的(h)所示,執行彎折線成形步驟,即:一邊使自前端12延伸出的尾線21的下端22接觸半導體元件50的表面一邊使瓷嘴10的前端12傾斜地向下方移動,將尾線21向沿著半導體元件50的表面的方向彎折而成形彎折線23。彎折線成形步驟除了使下端22接觸半導體元件50的表面的方面以外,與上文所說明的實施形態同樣。
繼而,控制部70如圖7的步驟S102、圖4的(a)、圖4的(b)所示,執行立起線成形步驟,即:於瓷嘴10的前端12與半導體元件50的表面之間夾持彎折線23的根部分,使瓷嘴10的前端12橫向移動,成形立起線24。立起線成形步驟除了於瓷嘴10的前端12與半導體元件50的表面之間夾持彎折線23以外,與上文所說明的實施形態同樣。
繼而,控制部70如圖7的步驟S103、圖9的(a)、圖9的(b)所示,執行接合步驟。控制部70如圖9的(a)的箭頭105所示,使瓷嘴10移動至半導體元件50的電極51之上,將瓷嘴10的Z方向的中心線19的位置設為自電極51的Z方向的中心線52的位置於橫向偏離距離g的位置。此處,距離g為立起線24的根部24a對準凸塊35的凹部36般的距離。
控制部70如圖9的(b)中的箭頭106所示,於將夾頭15設為閉的狀態下,使瓷嘴10下降而將立起線24的根部24a接合於成形於凸塊35的上表面的凹部36之上。如圖9的(b)所示,立起線24的根部24a成形為沿著凸塊35的上表面的形狀的形狀而接合於凸塊35之上。
若將立起線24接合於電極51的凸塊35之上,則立起線24如圖9的(b)中的箭頭107所示般沿大致垂直方向立起,於電極51的中心位置成形為於大致沿著中心線52的方向延伸的針狀線25。
控制部70接合立起線24而成形針狀線25後,結束接合步驟,執行圖7的步驟S104所示的線切斷步驟。
控制部70於如圖10中虛線所示般將夾頭15設為開的狀態下,使瓷嘴10上升而使尾線21自前端12延伸出既定的長度。繼而,如圖10中實線所示,控制部70將夾頭15設為閉,使夾頭15及瓷嘴10如箭頭108般上升,將穿插於瓷嘴10的尾線21的下端22切斷。藉此,控制部70於電極51的凸塊35之上成形獨立的針狀線25。
控制部70結束線切斷步驟後,使瓷嘴10移動至半導體元件50之上。繼而,控制部70於圖7的步驟S105中判斷是否進行了所有針狀線25的成形,於圖7的步驟S105中判斷為否的情形時,回到圖7的步驟S201,重複執行圖7的步驟S201以及圖8的(a)及圖8的(b)所示的壓接球成形步驟、圖7的步驟S202及圖8的(c)~圖8的(e)所示的凸塊成形步驟、圖7的步驟S101及圖3的(a)~圖3的(h)所示的彎折線成形步驟、圖7的步驟S102以及圖4的(a)及圖4的(b)所示的立起線成形步驟、圖7的步驟S103以及圖9的(a)及圖9的(b)所示的接合步驟、以及圖7的步驟S104及圖10所示的線切斷步驟。另外,若圖2的步驟S105中判斷為是,則結束針狀線25的成形。
以上說明的實施形態的針狀線成形方法如下,於半導體元件50的電極51之上成形壓接球31及凸塊35,將立起線24接合於凸塊35之上而成形針狀線25,故而於成形針狀線25的步驟中對半導體元件50施加的力小,可更合適地抑制半導體元件50的損傷並且成形針狀線25。另外,使尾線21的下端22接觸半導體元件50的表面而成形彎折線23,故而能夠以少的空間成形針狀線25。
以上說明的實施形態的針狀線成形方法中,設為下述情況進行了說明,即,控制部70於線成形步驟中,使尾線21的下端22接觸半導體元件50的表面並將尾線21彎折,但不限於此,例如亦可如圖11所示,使下端22接觸凸塊35並進行彎折。於該情形時,能夠以更少的空間成形針狀線25。
再者,控制部70亦於本實施形態中,亦可於彎折線成形步驟中,使下端22接觸基板或基準面40的表面並將尾線21彎折。另外,不限於半導體元件50的電極51之上,亦可於基板的電極之上成形針狀線25。
1:打線接合裝置
2:基台
3:XY台
4:接合頭
5:火炬電極
6:超音波喇叭
7:超音波振盪器
8:線張力器
9:旋轉閥芯
10:瓷嘴
12:前端
13:倒角部
15:夾頭
19、52:中心線
20:線
21:尾線
22:下端
23:彎折線
24:立起線
24a:根部
25:針狀線
30:無空氣球
31:壓接球
35:凸塊
36:凹部
40:基準面
50:半導體元件
51:電極
60:接合平台
61:加熱器
62:工件
70:控制部
91~93:一點鏈線
94~109:箭頭
d、e、f、g:距離
S101~S105、S201、S202:步驟
θ1~θ3:角度
圖1為表示實施形態的打線接合裝置的構成的系統圖。
圖2為表示實施形態的打線接合裝置執行的針狀線成形方法的流程圖。
圖3的(a)~圖3的(h)為表示實施形態的打線接合裝置的彎折線成形步驟的運作的說明圖。
圖4的(a)及圖4的(b)為表示實施形態的打線接合裝置的立起線成形步驟的運作的說明圖。
圖5的(a)及圖5(b)為表示實施形態的打線接合裝置的接合步驟的運作的說明圖。
圖6為表示實施形態的打線接合裝置的線切斷步驟的運作的說明圖。
圖7為表示實施形態的打線接合裝置執行的其他針狀線成形方法的流程圖。
圖8的(a)~圖8的(e)為表示實施形態的打線接合裝置的壓接球成形步驟的運作及凸塊成形步驟的運作的說明圖。
圖9的(a)及圖9的(b)為表示實施形態的打線接合裝置的接合步驟的其他運作的說明圖。
圖10為表示實施形態的打線接合裝置的線切斷步驟的其他運作的說明圖。
圖11為表示實施形態的打線接合裝置的彎折線成形步驟的其他運作的說明圖。
S101~S105:步驟
Claims (8)
- 一種針狀線成形方法,使用穿插有線的接合工具於基板或半導體元件的接合位置成形針狀的線,包括: 彎折線成形步驟,使自前端延伸出既定的長度的線的所述接合工具朝向基準面傾斜地下降,使線的下端接觸所述基準面並將線向沿著所述基準面的方向彎折而成形彎折線; 立起線成形步驟,於在所述接合工具的前端與所述基準面之間夾持所述彎折線的狀態下,使所述接合工具向與所述彎折線的延伸方向相反的方向橫向移動,使所述彎折線向上方立起而成形立起線; 接合步驟,使所述接合工具移動至所述基板或半導體元件的所述接合位置之上,將所述立起線接合於所述接合位置;以及 線切斷步驟,使所述接合工具上升而將穿插於所述接合工具的線切斷,藉此將所述立起線製成自所述接合位置豎起的針狀線。
- 如請求項1所述的針狀線成形方法,其中所述彎折線成形步驟以隨著使所述接合工具下降而所述接合工具的移動方向與所述基準面所成的角度變小的方式,使所述接合工具朝向所述基準面傾斜地下降。
- 如請求項1或請求項2所述的針狀線成形方法,其中所述接合步驟使所述接合工具的中心位置自所述接合位置的中心位置偏離並進行接合。
- 如請求項1或請求項2所述的針狀線成形方法,其中於所述彎折線成形步驟之前,包括: 壓接球成形步驟,使所述接合工具朝向所述接合位置下降,將使前端成形為無空氣球的線接合於所述接合位置而成形壓接球;以及 凸塊成形步驟,一邊自所述接合工具的前端伸出線一邊使所述接合工具上升後,將伸出的線於所述壓接球之上折回,進行按壓而成形凸塊, 所述接合步驟將所述立起線接合於所述凸塊之上。
- 如請求項4所述的針狀線成形方法,其中所述凸塊成形步驟將伸出的線於所述壓接球之上折回,使所述接合工具的中心位置自所述接合位置偏離並按壓線,成形於上表面具有凹部的所述凸塊, 所述接合步驟以所述立起線的根部對準所述凸塊的所述凹部的方式使所述接合工具的中心位置自所述接合位置偏離並進行接合。
- 如請求項1至請求項5中任一項所述的針狀線成形方法,其中所述基準面為所述基板的表面或所述半導體元件的表面。
- 如請求項4或請求項5所述的針狀線成形方法,其中所述彎折線成形步驟使自前端延伸出既定的長度的線的所述接合工具朝向所述基板的表面或所述半導體元件的表面傾斜地下降,使線的下端接觸所述凸塊並將線向沿著所述基板的表面或所述半導體元件的表面的方向彎折而成形所述彎折線。
- 一種打線接合裝置,使用穿插有線的接合工具於基板或半導體元件的接合位置成形針狀的線,其特徵在於包括: 控制部,調整所述接合工具的位置, 所述控制部執行: 彎折線成形步驟,使自前端延伸出既定的長度的線的所述接合工具朝向基準面傾斜地下降,使線的下端接觸所述基準面並將線向沿著所述基準面的方向彎折而成形彎折線; 立起線成形步驟,於在所述接合工具的前端與所述基準面之間夾持所述彎折線的狀態下,使所述接合工具向與所述彎折線的延伸方向相反的方向橫向移動,使所述彎折線向上方立起而成形立起線; 接合步驟,使所述接合工具移動至所述基板或半導體元件的所述接合位置之上,將所述立起線接合於所述接合位置;以及 線切斷步驟,使所述接合工具上升而將穿插於所述接合工具的線切斷,藉此將所述立起線設為自所述接合位置豎起的針狀線。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019094660 | 2019-05-20 | ||
JP2019-094660 | 2019-05-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202044438A true TW202044438A (zh) | 2020-12-01 |
TWI759711B TWI759711B (zh) | 2022-04-01 |
Family
ID=73458570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109111047A TWI759711B (zh) | 2019-05-20 | 2020-03-31 | 針狀線成形方法以及打線接合裝置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6966815B2 (zh) |
TW (1) | TWI759711B (zh) |
WO (1) | WO2020235211A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI775430B (zh) * | 2021-05-11 | 2022-08-21 | 日商新川股份有限公司 | 半導體裝置的製造方法以及打線接合裝置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5495667A (en) * | 1994-11-07 | 1996-03-05 | Micron Technology, Inc. | Method for forming contact pins for semiconductor dice and interconnects |
JPH11330125A (ja) * | 1998-05-20 | 1999-11-30 | Ricoh Co Ltd | キャピラリ、バンプ形成方法、並びに電子部品及びその製造方法 |
JP2010192928A (ja) * | 1999-08-12 | 2010-09-02 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
KR100548008B1 (ko) * | 2004-05-20 | 2006-02-01 | 삼성테크윈 주식회사 | 와이어 본딩 기기의 자동 볼 형성방법 |
JP2007165383A (ja) * | 2005-12-09 | 2007-06-28 | Ibiden Co Ltd | 部品実装用ピンを形成したプリント基板 |
JP2008034811A (ja) * | 2006-07-03 | 2008-02-14 | Shinkawa Ltd | ワイヤボンディング装置におけるボール形成装置及びボンディング装置 |
CN107078070B (zh) * | 2015-05-03 | 2018-07-06 | 华祥股份有限公司 | 打线接合用球形成装置 |
-
2020
- 2020-03-25 JP JP2020552046A patent/JP6966815B2/ja active Active
- 2020-03-25 WO PCT/JP2020/013339 patent/WO2020235211A1/ja active Application Filing
- 2020-03-31 TW TW109111047A patent/TWI759711B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI775430B (zh) * | 2021-05-11 | 2022-08-21 | 日商新川股份有限公司 | 半導體裝置的製造方法以及打線接合裝置 |
Also Published As
Publication number | Publication date |
---|---|
WO2020235211A1 (ja) | 2020-11-26 |
JPWO2020235211A1 (ja) | 2021-06-10 |
JP6966815B2 (ja) | 2021-11-17 |
TWI759711B (zh) | 2022-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI518814B (zh) | 半導體裝置以及半導體裝置的製造方法 | |
TWI649816B (zh) | 打線方法與打線裝置 | |
JP4787374B2 (ja) | 半導体装置の製造方法並びにワイヤボンディング装置 | |
US9922952B2 (en) | Method for producing semiconductor device, and wire-bonding apparatus | |
TW202044438A (zh) | 針狀線成形方法以及打線接合裝置 | |
JP2003163234A (ja) | ワイヤボンディング装置およびワイヤボンディング方法 | |
KR101860151B1 (ko) | 범프 형성 방법, 범프 형성 장치 및 반도체 장치의 제조 방법 | |
US10692835B2 (en) | Ball bond attachment for a semiconductor die | |
TWI834288B (zh) | 接腳引線形成方法、打線結合裝置以及結合工具 | |
JPH08181175A (ja) | ワイヤボンディング方法 | |
TWI816255B (zh) | 打線結構、打線結構形成方法以及電子裝置 | |
JP6973831B2 (ja) | ワイヤボンディング装置 | |
TWI824354B (zh) | 打線接合裝置、打線切斷方法以及程式 | |
TW202329273A (zh) | 接腳引線形成方法、打線結合裝置以及結合工具 | |
US20240006193A1 (en) | Semiconductor device manufacturing method and manufacturing apparatus | |
TW202308010A (zh) | 凸塊形成裝置、凸塊形成方法以及凸塊形成程式 | |
JP2964724B2 (ja) | バンプ形成方法 | |
JP2009076767A (ja) | 半導体装置の製造方法及びワイヤボンディング装置 | |
JPH10199913A (ja) | ワイヤボンディング方法 | |
KR19990026924A (ko) | 캐필러리의 구조 | |
JPH05109841A (ja) | ボール式ワイヤーボンデイング方法 | |
JPH01315152A (ja) | 超音波ワイヤボンディング方法 | |
JPH04251948A (ja) | 半導体装置の製造方法 | |
JPH03263842A (ja) | ワイヤボンディング方法 | |
JP2003142516A (ja) | ワイヤボンディング方法およびワイヤボンディング装置 |