TW202041891A - Lens unit, and light radiating device provided with lens unit - Google Patents
Lens unit, and light radiating device provided with lens unit Download PDFInfo
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- TW202041891A TW202041891A TW109111675A TW109111675A TW202041891A TW 202041891 A TW202041891 A TW 202041891A TW 109111675 A TW109111675 A TW 109111675A TW 109111675 A TW109111675 A TW 109111675A TW 202041891 A TW202041891 A TW 202041891A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
Description
本發明係關於透鏡單元以及具有該透鏡單元的光照射裝置,尤其有關於一種透鏡單元以及具有該透鏡單元的光照射裝置,前述透鏡單元以及具有該透鏡單元的光照射裝置係對照射面同時地成像照度分布均勻化的複數個點光(spot light)。The present invention relates to a lens unit and a light irradiation device having the lens unit, and more particularly to a lens unit and a light irradiation device having the lens unit. The lens unit and the light irradiation device having the lens unit simultaneously face the irradiation surface Image a plurality of spot lights with uniform illuminance distribution.
例如於日本特開2012-3038號公報揭示有照射雷射光至TFT(thin film transistor;薄膜電晶體)基板的雷射退火裝置。該雷射退火裝置係用以使形成像素(pixel)的資料線與閘極線的交錯部中的非晶矽(amorphous silicon)的薄膜退火且多晶矽(polysilicon)化。For example, Japanese Patent Application Publication No. 2012-3038 discloses a laser annealing device that irradiates laser light to a TFT (thin film transistor) substrate. The laser annealing device is used to anneal and polysilicon a thin film of amorphous silicon in the intersection of the data line and the gate line forming the pixel.
如圖9所示,照射雷射光至前述TFT基板的情形中,使用光遮罩(photomask)60(俯視圖)使雷射光選擇性地照射至於預定方向搬運的TFT基板上(圖中未示出)的複數個位置。該光遮罩60係於表面以一定的排列間距(pitch)矩陣狀地設置有複數個圖案(pattern)61(圖示之例中形成為二列(row))。As shown in FIG. 9, in the case of irradiating laser light to the aforementioned TFT substrate, a photomask 60 (top view) is used to selectively irradiate the laser light onto the TFT substrate transported in a predetermined direction (not shown in the figure) Plural positions of. The
於照射雷射光時,是對於將在光遮罩60形成的複數個圖案61的整體予以涵蓋的廣區域Ar(以虛線圍起的區域)照射。When the laser light is irradiated, a wide area Ar (area enclosed by a dotted line) that covers the entire plurality of
然而,不限於前述雷射退火裝置,只要是藉由光的照射進行材料的改質的光照射裝置(例如曝光裝置等)都要求使往光遮罩的照射區域整體的照度分布均勻化。However, the laser annealing device is not limited to the aforementioned laser annealing device, and any light irradiation device (for example, exposure device) that reforms the material by light irradiation is required to uniformize the illuminance distribution to the entire irradiation area of the light shield.
因此,以往係使用例如圖10所示的照射光學單元。Therefore, conventional systems use, for example, the irradiation optical unit shown in FIG. 10.
對於如圖10所示的照射光學單元進行說明,該照射光學單元中係從入口側(光源側)向照射面54側沿著光軸依序配置第一透鏡陣列(蠅眼(fly eye))51、第二透鏡陣列(蠅眼)52、積分透鏡(integrator lens)53。第一透鏡陣列51與第二透鏡陣列52的陣列數量(透鏡元件數量)為相同。The irradiation optical unit shown in FIG. 10 will be described. In the irradiation optical unit, a first lens array (fly eye) is sequentially arranged along the optical axis from the entrance side (light source side) to the
於該構成中,從光源射入第一透鏡陣列51的光束成為因應陣列數量的二次光源,該二次光源係射入第二透鏡陣列52。第二透鏡陣列52係將從第一透鏡陣列51射入的複數個二次光源的光束導向至積分透鏡53。In this configuration, the light beam incident from the light source into the
在此,從第二透鏡陣列52的各透鏡元件射出的光係藉由積分透鏡53而被集中於照射面54的一點且成像(第一透鏡陣列51的位置與照射面54成為共軛(conjugation)的關係)。Here, the light system emitted from each lens element of the
成像於照射面54的光係將形成於第一透鏡陣列51的複數個透鏡元件的通過光重疊於一處而成,故成為照度不均被抵銷而使照度分布均勻化。The light system forming an image on the
如前所述,於光照射裝置中,要求使照射光的照度分布成為均勻,照度分布均勻化後的照射光係例如圖9所示地對於廣區域Ar照射,前述廣區域Ar將在光遮罩形成的複數個圖案的整體予以涵蓋。As mentioned above, in the light irradiation device, the illuminance distribution of the irradiated light is required to be uniform. The irradiating light system after the illuminance distribution is uniformized is irradiated on a wide area Ar as shown in FIG. The entirety of the plural patterns formed by the cover is covered.
然而,通過光遮罩的圖案開口部的光僅為少許,被光遮罩遮蔽的光(照射光的大部分)成為沒有用處,故存有光的能源效率不佳的課題。However, the light passing through the pattern opening of the light shield is only a little, and the light shielded by the light shield (most of the irradiated light) becomes useless, so there is a problem of poor light energy efficiency.
另外,若為了提高光的能源效率而對遮罩的開口部個別地照射光,則需要每次都變更光源側或照射對象側的位置,故存有整體的處理需要時間的課題。In addition, if light is individually irradiated to the opening of the mask in order to improve the energy efficiency of light, the position of the light source side or the irradiation target side needs to be changed every time, so there is a problem that the overall processing takes time.
基於上述事由,本案發明人為了實現一種對光遮罩的複數個開口部同時地照射點光且這些點光的照度分布成為均勻之光照射裝置,不斷努力研究終於完成了本發明。Based on the above-mentioned reasons, the inventors of the present invention made continuous efforts to achieve the present invention in order to realize a light irradiating device that simultaneously irradiates a plurality of openings of the light shield and has a uniform illuminance distribution.
亦即,本發明的目的係提供一種透鏡單元以及具有該透鏡單元的光照射裝置,前述透鏡單元以及具有該透鏡單元的光照射裝置可以對照射面同時地成像照度分布均勻化的複數個點光。That is, the object of the present invention is to provide a lens unit and a light irradiation device having the lens unit. The aforementioned lens unit and the light irradiation device having the lens unit can simultaneously image a plurality of point lights with uniform illuminance distribution on the irradiation surface. .
為了達成上述目的,本發明的透鏡單元中係從光源側向照射面側沿著光軸依序配置了第一透鏡陣列、第二透鏡陣列以及積分透鏡;前述透鏡單元係包含:前述第一透鏡陣列,係用以使從光源射入的光束成為因應陣列數量的複數個二次光源;前述第二透鏡陣列,係用以將來自複數個前述二次光源的光束導向至前述積分透鏡;以及前述積分透鏡,係用以使通過前述第二透鏡陣列所具有的各透鏡元件內的同一區域之光束聚集於前述照射面上的對應的同一區域;前述第一透鏡陣列係以前述第二透鏡陣列所具有的透鏡元件為單位將陣列數量進一步分割並且較與前述照射面共軛的面的位置沿著光軸方向配置於光源側。In order to achieve the above-mentioned object, the lens unit of the present invention has a first lens array, a second lens array, and an integrator lens arranged in sequence along the optical axis from the light source side to the irradiation surface side; the lens unit includes: the first lens The array is used to make the light beams emitted from the light source become a plurality of secondary light sources corresponding to the number of the array; the second lens array is used to guide the light beams from the plurality of secondary light sources to the integrator lens; and The integrator lens is used to focus the light beams passing through the same area in each lens element of the second lens array on the corresponding same area on the irradiation surface; the first lens array is formed by the second lens array The lens element has the number of arrays further divided in units, and the position of the surface conjugate with the aforementioned irradiation surface is arranged on the light source side along the optical axis direction.
又,較佳為於前述照射面成像的點光的數量係將前述第一透鏡陣列所具有的透鏡元件的數量除以前述第二透鏡陣列所具有的透鏡元件的數量而得的數量。Furthermore, it is preferable that the number of spot lights forming an image on the irradiation surface is a number obtained by dividing the number of lens elements of the first lens array by the number of lens elements of the second lens array.
另外,較佳為具有使前述第一透鏡陣列沿著光軸方向移動的透鏡陣列移動機構。In addition, it is preferable to have a lens array moving mechanism that moves the first lens array along the optical axis direction.
另外,較佳為前述積分透鏡亦可由使於前述照射面成像的像的橫比變化之第一柱面透鏡(cylindrical lens)以及使於前述照射面成像的像的縱比變化之第二柱面透鏡所構成。In addition, it is preferable that the integrator lens may be a first cylindrical lens that changes the aspect ratio of the image formed on the irradiation surface and a second cylindrical lens that changes the aspect ratio of the image formed on the irradiation surface. Consists of lenses.
如上所述,依據本發明的構成,使第一透鏡陣列的位置從與照射面為共軛的面的位置沿著光軸方向往光源側偏移並且以第二透鏡陣列的透鏡元件為單位將前述第一透鏡陣列的陣列數量進一步分割。藉此,可以於照射面成像分割的複數個點光,將各點光間以及各點光內的照度分布均勻化。As described above, according to the configuration of the present invention, the position of the first lens array is shifted from the position of the surface conjugate with the irradiation surface to the light source side along the optical axis direction, and the lens element of the second lens array is moved The number of arrays of the aforementioned first lens array is further divided. Thereby, it is possible to form a plurality of divided spot lights on the irradiation surface, and the illuminance distribution between and within each spot light can be made uniform.
另外,藉由該構成可容易地形成與例如光遮罩的複數個開口對應的點光,可對複數個前述開口同時地照射點光,提高光的能源效率以及作業效率。In addition, with this configuration, it is possible to easily form spot lights corresponding to, for example, a plurality of openings of the light shield, and it is possible to simultaneously irradiate the plurality of openings with spot lights, thereby improving light energy efficiency and work efficiency.
另外,為了達成上述目的,本發明的光照射裝置之特徵係具有前述透鏡單元。In addition, in order to achieve the above-mentioned object, the light irradiation device of the present invention is characterized by having the aforementioned lens unit.
依據本發明,可以提供一種透鏡單元以及具有該透鏡單元的光照射裝置,前述透鏡單元以及具有該透鏡單元的光照射裝置可以對照射面同時地成像照度分布均勻化的複數個點光。According to the present invention, a lens unit and a light irradiation device having the lens unit can be provided. The lens unit and the light irradiation device having the lens unit can simultaneously image a plurality of spot lights with uniform illuminance distribution on the irradiation surface.
以下,根據圖式說明本發明的透鏡單元以及光照射裝置的實施形態。圖1係示意性地顯示應用了本發明的透鏡單元的雷射退火裝置(光照射裝置)的一例之剖面圖。圖2係顯示以圖1的雷射退火裝置處理的TFT基板的一部分之俯視圖。Hereinafter, embodiments of the lens unit and the light irradiation device of the present invention will be described based on the drawings. FIG. 1 is a cross-sectional view schematically showing an example of a laser annealing device (light irradiation device) to which the lens unit of the present invention is applied. FIG. 2 is a top view showing a part of the TFT substrate processed by the laser annealing device of FIG. 1.
圖1所示的雷射退火裝置1係用以對在表面矩陣狀地設置有複數個像素(畫素)的TFT基板10選擇性地照射雷射光從而使形成於基板的非晶矽的薄膜退火且多晶矽化的裝置。The laser annealing
如圖2所示,在此所使用的TFT基板10係具有複數個像素30,該複數個像素30係在以箭號A所示的基板搬運方向以排列間距P1配置,在與基板搬運方向正交的方向以排列間距P2配置。As shown in FIG. 2, the
另外,如圖所示,在基板面沿著各像素30的緣部於與基板搬運方向平行的方向形成有複數個資料線31,於與基板搬運方向正交的方向形成有複數個閘極線32。In addition, as shown in the figure, a plurality of
另外,於基板搬運方向前頭側的表示區域外形成有十字狀的引入標記33。In addition, a cross-shaped lead-in
針對雷射退火裝置1的構成進行說明,雷射退火裝置1係具有:光遮罩2,係對應配置於前述TFT基板10;遮罩台3,係保持前述光遮罩2;以及搬運機構4,係將前述TFT基板10載置且於箭號A方向以一定速度搬運。The structure of the
前述遮罩台3係於前述遮罩台3的中央部具有開口部3a且將光遮罩2的周緣部予以把持。然後,藉由馬達等的驅動機構14而實現可於圖示的箭號B、C方向移動。The
前述搬運機構4係具備氣台(air stage)5,前述氣台5係具有:複數個噴出孔,係於上表面噴出氣體;以及複數個吸引孔,係將氣體吸引。然後,成為在藉由氣體的噴出與吸引的平衡而使TFT基板10於氣台5上浮起達一定量的狀態下,藉由圖中未表示的搬運輥而把持TFT基板10的兩端緣部且搬運。另外,構成為藉由圖中未表示的位置感測器、速度感測器而檢測出基板位置。The
另外,雷射退火裝置1係具有:透鏡單元6,係配置於前述光遮罩2的上方;以及雷射光源7,係配置於前述透鏡單元6的上方,放射雷射光至前述透鏡單元6。該雷射光源7係將例如波長為308nm或353nm的雷射光9以例如50Hz的重複周期放射的準分子雷射(excimer laser)。In addition, the
前述透鏡單元6係配置於從前述雷射光源7放射的雷射光9的光路上。該透鏡單元6係為了將由雷射光源7射入的雷射光9分割為預定的複數個點光並且使分割後的複數個點光的各自中的照度分布均勻化而設置。另外,該透鏡單元6係包含成為本發明的特徵之構成,詳細將於後述。The
前述光遮罩2係用以使光選擇性地照射在TFT基板10上預先設定的複數個位置(光照射目標位置)。The
如圖3中的(a)所示,以與於TFT基板10形成的複數個像素30的排列間距P1、P2相等的排列間距於該光遮罩2矩陣狀地形成有複數個開口亦即遮罩圖案20。又,於圖示之例中顯示有與基板搬運方向A正交的二列的遮罩圖案20A、20B。As shown in FIG. 3(a), the
如圖3中的(b)所示,前述遮罩圖案20係在設置於透明基板11的表面的遮光膜12形成的供光通過的一定形狀的開口。As shown in (b) of FIG. 3, the
另外,於前述透明基板11的背面(TFT基板10側)設置有複數個微透鏡(micro lens)17。該複數個微透鏡17係用以使光聚光於TFT基板10上的凸透鏡且使光軸一致於各遮罩圖案20的中心而配置。In addition, a plurality of
另外,如圖3中的(a)所示,於前述光遮罩2形成有於與基板搬運方向A正交的方向為長邊的第一觀察窗12A、第二觀察窗12B、第三觀察窗12C。In addition, as shown in FIG. 3(a), the
於該第一觀察窗12A、第二觀察窗12B、第三觀察窗12C之中設置有用以進行複數個遮罩圖案20與TFT基板10上的光照射目標位置的位置對準的第一對齊標記21A、第二對齊標記21B、第三對齊標記21C。A first alignment mark is provided in the
另外,雷射退火裝置1係具備可使前述遮罩台3沿著圖3的E、F方向移動的對齊機構19。該對齊機構19係藉由用以使TFT基板10與光遮罩2的位置對準的例如線性馬達、電磁致動器、或軌道以及馬達等所構成。In addition, the
另外,雷射退火裝置1係具備於TFT基板10的下方中與前述第一觀察窗12A、第二觀察窗12B、第三觀察窗12C之中的一個觀察窗對向而配置的線相機(line camera)15。In addition, the
該線相機15係從下方透過TFT基板10拍攝TFT基板10的表面以及光遮罩2的第一對齊標記21A、第二對齊標記21B、第三對齊標記21C,將這些第一對齊標記21A、第二對齊標記21B、第三對齊標記21C的一維畫像輸出至後述的控制機構18。The
另外,與線相機15對向地於遮罩台3的上方設置有照明用光源16,且設置為照明線相機15的拍攝位置。In addition, a
進一步地,雷射退火裝置1係具備有由用以進行裝置內的驅動控制的電腦裝置所構成的控制機構18。Furthermore, the
在此,使用圖4說明透鏡單元6的構成。如圖4所示,透鏡單元6係具有從入口側(雷射光源側)向照射面29沿著光軸依序配置的第一透鏡陣列(蠅眼)25、第二透鏡陣列(蠅眼)27以及積分透鏡28。另外,如圖所示,於較第二透鏡陣列27更靠近光源側存在有與前述照射面29共軛的面(稱為共軛面26)。Here, the configuration of the
又,於本實施形態中,前述照射面29係被設定於光遮罩2的面(背面)。Furthermore, in this embodiment, the
前述第一透鏡陣列25係用以從由雷射光源7射入的光束生成與陣列數量因應的複數個二次光源。該二次光源係如圖所示地生成於第一透鏡陣列25的焦點。The aforementioned
另外,第二透鏡陣列27的各透鏡元件係為了將來自複數個二次光源的光束導向至積分透鏡28而設置。In addition, each lens element of the
另外,積分透鏡28係為了將通過第二透鏡陣列27的各透鏡元件內的同一區域之光束聚集於照射面29上的對應的同一區域而設置。In addition, the
於本實施形態中,第一透鏡陣列25的位置係配置於較共軛面26更靠近雷射光源7側,故通過第一透鏡陣列25且於透鏡元件個別地被縮小直徑且在共軛面26的像係成像於照射面29上。In this embodiment, the position of the
另外,前述第一透鏡陣列25係具有將第二透鏡陣列27的陣列數量進一步地分割的陣列數量。亦即,第一透鏡陣列25的陣列數量(透鏡元件數量)係形成為較第二透鏡陣列27的陣列數量(透鏡元件數量)還多。In addition, the aforementioned
因此,在照射面29成像的是由與第二透鏡陣列27的各透鏡元件對應的第一透鏡陣列25的複數個透鏡單元而得的像,亦即在照射面29成像的是複數個點光(在照射面29成像的點光的數量係成為將第一透鏡陣列25所具有的透鏡元件數量除以第二透鏡陣列27所具有的透鏡元件數量而得的數量)。Therefore, the image formed on the
若具體地說明,於圖5中的(a)顯示有第一透鏡陣列25的示意性的前視圖,於圖5中的(b)顯示有第二透鏡陣列27的示意性的前視圖。另外,於圖5中的(c)顯示有於照射面29成像的點光S。Specifically, (a) in FIG. 5 shows a schematic front view of the
又,於圖5所示的例中,雖為了易於說明而簡略化了陣列數量,但最後於照射面29成像的複數個點光S係在本實施形態中成為與圖3中的(a)所示的遮罩圖案20的數量、排列對應。In addition, in the example shown in FIG. 5, although the number of arrays is simplified for ease of description, the plurality of spot lights S formed on the
如圖5中的(b)所示,第二透鏡陣列27係被分割為Mx×My個陣列數量,於分割的各要素具有透鏡元件。於該例中,Mx=4、My=4,故具有4×4個透鏡元件。As shown in FIG. 5(b), the
另外,如圖5中的(a)所示,第一透鏡陣列25係將第二透鏡陣列27中的Mx×My(4×4)個各透鏡元件內的區域進一步分割為Nx×Ny(2×3)個陣列數量,於分割的各要素分別具有透鏡元件。In addition, as shown in FIG. 5(a), the
亦即,第一透鏡陣列25的整體中具有(Nx×Mx)×(Ny×My)個透鏡元件。該例中Nx=2、Ny=3,故成為具有(2×4)×(3×4)個亦即8×12個透鏡元件。That is, the entire
於該情形中,第一透鏡陣列25所具有的複數(8×12)個透鏡元件的光軸係分別在共軛面26被縮小直徑,並藉由第二透鏡陣列27而在各Mx×My(4×4)個透鏡元件被導向至積分透鏡28。In this case, the optical axes of the plural (8×12) lens elements of the
然後,於第二透鏡陣列27所具有的Mx×My(4×4)個透鏡元件各自射入至積分透鏡28的複數個光係在照射面29聚集且成像。此時,通過了第二透鏡陣列27所具有的各透鏡元件內的同一區域的光束係聚集於照射面29上的對應的同一區域。Then, the plurality of light systems each incident on the
更具體說明,例如圖5中的(a)所示,第一透鏡陣列25係包含4×4=16組的Nx×Ny(2×3)個透鏡元件。在各組中的Nx×Ny(2×3)個透鏡元件中,將例如通過圖式中看來的左上位置的透鏡元件的光分別設為a11
、a12
、a13
、...a42
、a43
、a44
(全部共16個)。More specifically, for example, as shown in (a) of FIG. 5, the
如圖5中的(b)所示,於第一透鏡陣列25中,通過16個透鏡元件的光a11
至a44
係分別射入第二透鏡陣列27所具有的16個透鏡元件的圖式中看來的左上的區域。As shown in (b) of FIG. 5, in the
於第二透鏡陣列27的各透鏡元件中,通過圖式中看來的左上的同一區域的光a11
至a44
係藉由積分透鏡28而在照射面25上的對應的同一區域作為點光Sa重疊、成像(Sa=a11
+a12
+...+a43
+a44
)。In each of the lens elements of the
於圖5之例中,如上所述地於照射面29成像的是如圖5中的(c)所示的Nx×Ny(2×3)個點光(於對圖3的光遮罩2照射的情形中,則對應圖3中的(a)的遮罩圖案20而成為2×22個點光)。在此,由於各點的光係通過Mx×My(4×4)個透鏡元件的光重複而成,故成為照度不均被抵銷且照度均勻化。In the example of FIG. 5, the imaging on the illuminated
另外,如圖4所示,透鏡單元6亦可具備透鏡陣列移動機構34,用以移動、調整第一透鏡陣列25的沿著光軸的位置。In addition, as shown in FIG. 4, the
例如於圖4中,在使前述第一透鏡陣列25的位置與共軛面26一致的情形中,由於被分割為Nx×Ny(2×3)個各點光S的直徑不會被縮小,故點光S間的邊界將消失(成為看不到邊界)。For example, in FIG. 4, in the case where the position of the aforementioned
此乃因藉由透鏡陣列移動機構34使第一透鏡陣列25如圖所示地移動至較共軛面26更靠近雷射光源7側,而使來自各透鏡元件的光軸的直徑被縮小,結果(越往光源側移動則越)如圖5中的(c)所示地於點光S間顯現出粗的框線L。This is because the
另外,藉由如上所述地變更第一透鏡陣列25的位置而可變更點光S的大小,故可以容易地調整複數個點光S的照射面積(亦即,可以配合在光遮罩2形成的遮罩圖案20之開口形狀而調整照射面積)。In addition, by changing the position of the
接下來,說明由如上所述地構成的雷射退火裝置1所進行的一連串的動作。Next, a series of operations performed by the
首先,將需要的資訊記憶於控制機構18的記憶體而實行初期設定。另外,遮罩台3的驅動機構14根據控制機構18的指示而被驅動,遮罩台3於箭號B方向移動達預定距離。First, the necessary information is stored in the memory of the
藉此,例如第一觀察窗12A被定位於線相機15的上方而選擇第一對齊標記21A,實行線相機15與第一對齊標記21A的位置對準。Thereby, for example, the
接下來,搬運機構4係在將TFT基板10載置於氣台5的上表面的狀態下於箭號A方向以一定速度開始搬運。Next, the
TFT基板10被搬運,當註記於該基板的引入標記33到達於光遮罩2形成的第一觀察窗12A的下側時則開始由線相機15所進行的拍攝,且以一定的時間間隔使拍攝畫像輸出至控制機構18。The
於控制機構18中,根據前述引入標記33與對齊標記21A的位置關係驅動對齊機構19。然後,對齊機構19係將遮罩台3於圖6中箭號所示的E、F方向移動,於與基板搬運方向A正交的方向中進行TFT基板10與光遮罩2的位置對準。In the
然後,控制機構18係於當藉由運算求得的TFT基板10的搬運方向的移動距離達到目標值且如圖6所示般複數個資料線31與複數個閘極線32的交錯部和光遮罩2的複數個遮罩圖案20之中心一致時輸出雷射光源7的發光指令。藉此,從雷射光源7發射的雷射光於預定時間之間經由透鏡單元6照射至光遮罩2。Then, the
在此,從前述透鏡單元6射出的光係光的照射面29成為光遮罩2的面(背面)並如前所述地分割為複數個點光S,該點光S的照度分布均勻化。該複數個點光S係如圖7所示地與在光遮罩2形成的複數個遮罩圖案20的位置對應並且各點光S的照射面積係被調整為涵蓋所對應的遮罩圖案20的開口大小之程度的大小。因此,被光遮罩2所遮蔽的光成為僅為少許,而可提高光的能源效率。Here, the
這樣一來,照度均勻的雷射光分為複數個點光S且照射於光遮罩2的背面,藉由光遮罩2的微透鏡17而使雷射光聚光於TFT基板10的資料線31與閘極線32的交錯部。然後,該聚光部的非晶矽膜被退火處理而多晶矽化。In this way, the laser light with uniform illuminance is divided into a plurality of spot lights S and irradiated on the back of the
之後,在本實施形態中,每當TFT基板10移動達2P1則進行藉由雷射光源使雷射光發光一定期間的控制,藉此可將TFT基板10整體的退火目標位置的非晶矽膜退火處理而多晶矽化。After that, in this embodiment, every time the
如以上所述,依據本發明的實施形態,於形成照射光的透鏡單元6中,使第一透鏡陣列25的位置從與照射面29的共軛面26的位置沿著光軸方向往光源側偏移並且以第二透鏡陣列27的透鏡元件為單位將前述第一透鏡陣列25的陣列數量進一步分割。As described above, according to the embodiment of the present invention, in the
藉此,可以於照射面29成像複數個點光S,將各點光S間以及各點光S內的照度分布均勻化。Thereby, a plurality of spot lights S can be formed on the
另外,藉由該構成可容易地形成與光遮罩2的複數個開口(遮罩圖案20)對應的點光S,可對複數個前述開口同時地照射點光S,提高光的能源效率以及作業效率。In addition, with this configuration, the spot lights S corresponding to the plurality of openings (mask patterns 20) of the
又,於前述實施形態中,雖然為使用了積分透鏡28的構成且前述積分透鏡28係使與第一透鏡陣列25所具有的各透鏡元件的形狀因應的形狀之點光S成像於照射面29,但本發明不被限定於該構成。In addition, in the foregoing embodiment, although the
例如,亦可為如圖8的立體圖所示,設為作為取代積分透鏡28而配置了柱面透鏡單元40作為積分透鏡的構成。For example, as shown in the perspective view of FIG. 8, a
於圖8所示的例中,柱面透鏡單元40係由一對柱面透鏡41a、41b(第一柱面透鏡)以及配置於一對柱面透鏡41a、41b(第一柱面透鏡)之間的柱面透鏡42(第二柱面透鏡)所構成,前述一對柱面透鏡41a、41b(第一柱面透鏡)係用以變更光軸的x方向的直徑(橫比),前述柱面透鏡42(第二柱面透鏡)係用以變更光軸的y方向的直徑(縱比)。In the example shown in FIG. 8, the
可以藉由採用上述構成而變更成像於照射面29的點光的形狀的x方向與y方向的長寬比(aspect ratio;亦稱縱橫比)。The aspect ratio (also called the aspect ratio) of the shape of the spot light imaged on the
又,於圖8所示的柱面透鏡單元40之例中,雖然變更光軸的x方向的直徑(橫比)之第一柱面透鏡係以2片構成且用以變更光軸的y方向的直徑(縱比)之第二柱面透鏡係以1片構成,但並非限定於該構成。In addition, in the example of the
亦即,於圖8所示的例中,由於光軸的倍率在x方向與在y方向不同,故在x方向與在y方向的透鏡構成不同,於x、y的各方向中,柱面透鏡的片數、透鏡形狀(凸透鏡、凹透鏡)的組合並不被限定。That is, in the example shown in FIG. 8, since the magnification of the optical axis is different in the x direction and the y direction, the lens configuration in the x direction and the y direction are different. In each of the x and y directions, the cylindrical The combination of the number of lenses and the lens shape (convex lens, concave lens) is not limited.
另外,於前述實施形態中,雖顯示了將本發明的透鏡單元應用於雷射退火裝置之例,但不限於此,只要是藉由光的照射而進行材料的改質之裝置則無論是任何裝置皆可應用本發明。In addition, in the foregoing embodiment, although an example of applying the lens unit of the present invention to a laser annealing device is shown, it is not limited to this, as long as it is a device that modifies materials by irradiation of light, it does not matter. The device can apply the present invention.
例如,於如圖1所示的裝置中,只要取代雷射光源7而採用由放射紫外線的氙燈(xenon lamp)、超高壓水銀燈、或放射紫外線的雷射光源所構成的曝光用光源,則亦可應用於將塗布於基板上的感光材予以曝光之曝光裝置。該情形中,亦可不設置形成在光遮罩2的透明基板11的下表面之微透鏡17而成為接近曝光的裝置構成。For example, in the device shown in FIG. 1, as long as the
或著,亦可將本發明應用於下述投影曝光的裝置構成:在光遮罩與曝光對象(基板)之間設置投影透鏡,藉由本發明的透鏡單元對前述光遮罩照射點光,經由前述投影透鏡曝光。Alternatively, the present invention can also be applied to the following projection exposure device configuration: a projection lens is provided between the light shield and the exposure object (substrate), and the lens unit of the present invention irradiates the light shield with spot light through The aforementioned projection lens is exposed.
1:雷射退火裝置(光照射裝置)
2:光遮罩
3:遮罩台
3a:開口部
4:搬運機構
5:氣台
6:透鏡單元
7:雷射光源
9:雷射光
10:TFT基板
11:光源
12:遮光膜
12A:第一觀察窗
12B:第二觀察窗
12C:第三觀察窗
14:驅動機構
15:線相機
16:照明用光源
17:微透鏡
18:控制機構
19:對齊機構
20,20A,20B:遮罩圖案
21A:第一對齊標記
21B:第二對齊標記
21C:第三對齊標記
25,51:第一透鏡陣列
26:共軛面
27,52:第二透鏡陣列
28,53:積分透鏡
29,54:照射面
30:像素
31:資料線
32:閘極線
33:引入標記
34:透鏡陣列移動機構
40:柱面透鏡單元
41a,41b:柱面透鏡(第一柱面透鏡)
42:柱面透鏡(第二柱面透鏡)
60:光遮罩
61:圖案
A,B,C:箭號
E,F:方向
L:框線
P1,P2:排列間距
S,Sa:點光
Ar:廣區域
a11~a44:光1: Laser annealing device (light irradiation device) 2: Light shield 3: Mask table 3a: Opening 4: Transport mechanism 5: Air table 6: Lens unit 7: Laser light source 9: Laser light 10: TFT substrate 11: Light source 12:
[圖1]係示意性地顯示應用了本發明的透鏡單元的雷射退火裝置(光照射裝置)的一例之剖面圖。 [圖2]係顯示以圖1的雷射退火裝置進行處理的TFT基板的一部分的俯視圖。 [圖3]中,(a)係圖1的雷射退火裝置所具有的光遮罩的俯視圖,(b)係光遮罩之剖面圖。 [圖4]係顯示圖1的雷射退火裝置所具有的透鏡單元的構成之側視圖。 [圖5]中,(a)係圖4的透鏡單元所具有的第一透鏡陣列的前視圖,(b)係圖4的透鏡單元所具有的第二透鏡陣列的前視圖,(c)係藉由圖4的透鏡單元於照射面成像的像的前視圖。 [圖6]係用以說明圖3的光遮罩與TFT基板的位置對準之俯視圖。 [圖7]係顯示對圖3的光遮罩的每個圖案照射的點光之俯視圖。 [圖8]係顯示本發明的透鏡單元的變形例之立體圖。 [圖9]係顯示以往的雷射退火裝置中的往光遮罩的光照射區域之俯視圖。 [圖10]係顯示以往的照射光學單元的構成之側視圖。Fig. 1 is a cross-sectional view schematically showing an example of a laser annealing device (light irradiation device) to which the lens unit of the present invention is applied. [Fig. 2] A plan view showing a part of a TFT substrate processed by the laser annealing apparatus of Fig. 1. [Fig. In [FIG. 3], (a) is a plan view of the light shield included in the laser annealing apparatus of FIG. 1, and (b) is a cross-sectional view of the light shield. [Fig. 4] A side view showing the configuration of a lens unit included in the laser annealing apparatus of Fig. 1. [Fig. In [FIG. 5], (a) is a front view of the first lens array included in the lens unit of FIG. 4, (b) is a front view of the second lens array included in the lens unit of FIG. 4, and (c) is The front view of the image formed by the lens unit of FIG. 4 on the irradiation surface. [FIG. 6] A plan view for explaining the alignment of the light shield of FIG. 3 with the TFT substrate. [FIG. 7] A plan view showing the spot light irradiated to each pattern of the light mask of FIG. 3. Fig. 8 is a perspective view showing a modification of the lens unit of the present invention. Fig. 9 is a plan view showing the light irradiation area of the light shield in the conventional laser annealing device. [Fig. 10] is a side view showing the structure of a conventional irradiation optical unit.
6:透鏡單元 6: Lens unit
25:第一透鏡陣列 25: The first lens array
26:共軛面 26: Conjugate surface
27:第二透鏡陣列 27: The second lens array
28:積分透鏡 28: Integrating lens
29:照射面 29: Irradiated surface
34:透鏡陣列移動機構 34: Lens array moving mechanism
Claims (7)
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JP2019-079239 | 2019-04-18 | ||
JP2019079239A JP2020177132A (en) | 2019-04-18 | 2019-04-18 | Lens unit and light irradiation device including the same |
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TW202041891A true TW202041891A (en) | 2020-11-16 |
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DE10049557B4 (en) * | 2000-10-06 | 2004-09-02 | Microlas Lasersystem Gmbh | Device for converting the intensity distribution of a laser beam |
JP4865382B2 (en) * | 2005-04-01 | 2012-02-01 | 株式会社半導体エネルギー研究所 | Beam homogenizer and laser irradiation device |
EP2364809A1 (en) * | 2010-02-26 | 2011-09-14 | Excico France | Method and apparatus for irradiating a semiconductor material surface by laser energy |
JP2011216863A (en) * | 2010-03-17 | 2011-10-27 | Hitachi Via Mechanics Ltd | Variable beam size illumination optical apparatus and beam size adjusting method |
JP5149446B2 (en) * | 2011-04-14 | 2013-02-20 | パイオニア株式会社 | Light source unit and head-up display |
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JP2020177132A (en) | 2020-10-29 |
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