TW202031375A - Cooling system and cooling method - Google Patents
Cooling system and cooling method Download PDFInfo
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- TW202031375A TW202031375A TW108133663A TW108133663A TW202031375A TW 202031375 A TW202031375 A TW 202031375A TW 108133663 A TW108133663 A TW 108133663A TW 108133663 A TW108133663 A TW 108133663A TW 202031375 A TW202031375 A TW 202031375A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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Abstract
Description
歸因於製造要求,應當移除每個製造流程中的半導體的殘餘物。然而,沒有足夠的移除半導體殘餘物的方式。由此,充分且精確地移除半導體殘餘物成為半導體技術領域中的關鍵問題。 Due to manufacturing requirements, the residue of semiconductors in each manufacturing process should be removed. However, there are not enough ways to remove semiconductor residues. Therefore, adequate and accurate removal of semiconductor residues has become a key issue in the field of semiconductor technology.
100‧‧‧清潔裝置 100‧‧‧Cleaning device
110‧‧‧貯槽 110‧‧‧Tank
112‧‧‧內貯槽 112‧‧‧Inner storage tank
114、116‧‧‧外貯槽 114、116‧‧‧External storage tank
120、170‧‧‧管道 120、170‧‧‧Pipe
121、123、125、127、129‧‧‧閥門 121, 123, 125, 127, 129‧‧‧valve
130‧‧‧泵 130‧‧‧Pump
140‧‧‧加熱器 140‧‧‧Heater
150‧‧‧過濾器 150‧‧‧Filter
160‧‧‧振蕩器 160‧‧‧Oscillator
200‧‧‧濃度量測裝置 200‧‧‧Concentration measuring device
210‧‧‧管 210‧‧‧Tube
220‧‧‧冷卻器 220‧‧‧Cooler
221‧‧‧風扇 221‧‧‧Fan
222、223‧‧‧螺旋軟管 222、223‧‧‧Spiral hose
224、250‧‧‧泵 224、250‧‧‧Pump
226‧‧‧冷凝器 226‧‧‧Condenser
228‧‧‧外殼 228‧‧‧Shell
230‧‧‧濃度計 230‧‧‧Concentration meter
240‧‧‧風扇 240‧‧‧Fan
260‧‧‧處理器 260‧‧‧Processor
310~380‧‧‧操作 310~380‧‧‧Operation
500‧‧‧液體 500‧‧‧Liquid
600‧‧‧半導體裝置 600‧‧‧Semiconductor device
602‧‧‧半導體基板 602‧‧‧Semiconductor substrate
604‧‧‧圖案化的遮罩 604‧‧‧patterned mask
702‧‧‧溝槽 702‧‧‧Groove
704‧‧‧鰭片 704‧‧‧Fin
706‧‧‧介電層 706‧‧‧Dielectric layer
N1、N2‧‧‧節點 N1、N2‧‧‧node
當結合隨附圖式閱讀時,將自以下詳細描述最佳地理解本揭示的態樣。應注意,根據工業中的標準實務,各個特徵並非按比例繪製。事實上,出於論述清晰的目的,可任意增加或減小各個特徵的尺寸。 When read in conjunction with the accompanying drawings, the aspect of the present disclosure will be best understood from the following detailed description. It should be noted that according to standard practice in the industry, the various features are not drawn to scale. In fact, for the purpose of clarity, the size of each feature can be increased or decreased arbitrarily.
第1圖係根據本揭示各個實施例的系統示意圖; Figure 1 is a schematic diagram of a system according to various embodiments of the present disclosure;
第2圖係根據本揭示各個實施例中,說明第1圖中系統操作的方法流程圖; Figure 2 is a flowchart illustrating the method of operating the system in Figure 1 according to various embodiments of the present disclosure;
第3圖係根據本揭示各個實施例中,如第1圖所示系統的冷卻器示意圖; Figure 3 is a schematic diagram of the cooler of the system shown in Figure 1 in various embodiments of the present disclosure;
第4圖係根據本揭示各個實施例中,如第1圖所示系統的冷卻器示意圖; Figure 4 is a schematic diagram of the cooler of the system shown in Figure 1 according to various embodiments of the present disclosure;
第5圖係根據本揭示各個實施例中,如第1圖所示系統的冷卻器示意圖; Figure 5 is a schematic diagram of the cooler of the system shown in Figure 1 according to various embodiments of the present disclosure;
第6圖係根據本揭示各個實施例的系統示意圖; Figure 6 is a schematic diagram of a system according to various embodiments of the present disclosure;
第7圖係根據本揭示各個實施例的系統示意圖; Figure 7 is a schematic diagram of a system according to various embodiments of the present disclosure;
第8圖係根據本揭示各個實施例的系統示意圖; Fig. 8 is a schematic diagram of a system according to various embodiments of the present disclosure;
第9圖係根據本揭示各個實施例中,如第8圖所示系統的冷卻器示意圖; Figure 9 is a schematic diagram of the cooler of the system shown in Figure 8 according to various embodiments of the present disclosure;
第10圖係根據本揭示各個實施例中,如第1圖中所示半導體裝置的剖面圖; FIG. 10 is a cross-sectional view of the semiconductor device shown in FIG. 1 in various embodiments according to the present disclosure;
第11圖係根據本揭示各個實施例中,如第1圖中所示半導體裝置的剖面圖; FIG. 11 is a cross-sectional view of the semiconductor device shown in FIG. 1 in various embodiments according to the present disclosure;
第12圖係根據本揭示各個實施例中,如第1圖中所示半導體裝置的剖面圖。 FIG. 12 is a cross-sectional view of the semiconductor device shown in FIG. 1 in various embodiments according to the present disclosure.
以下揭示內容提供許多不同實施例或實例,以便實施所提供標的之不同特徵。下文描述元件及佈置的具體實例以簡化本揭示。當然,此等僅為實例且並不意欲為限制性。例如,以下描述中在第二特徵上方或第二特徵上形成第一特徵可包括以直接接觸形成第一特徵及第二特徵的實施例;且亦可包括在第一特徵與第二特徵之間形成額外特徵,以使得第一特徵及第二特徵可不直接接觸的實施例。此外,本揭示可在各個實例中重複元件符號及/或字母。此重複係 出於簡便性及清晰的目的且本身並不指示所論述的各個實施例及/或構造之間的關係。 The following disclosure provides many different embodiments or examples in order to implement different features of the provided subject matter. Specific examples of elements and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description, forming the first feature above or on the second feature may include an embodiment in which the first feature and the second feature are formed in direct contact; and may also be included between the first feature and the second feature An additional feature is formed so that the first feature and the second feature may not directly contact the embodiment. In addition, the present disclosure may repeat element symbols and/or letters in various examples. This duplicate For the sake of simplicity and clarity and does not indicate the relationship between the various embodiments and/or configurations discussed.
在本說明書中使用的術語通常具有其在本領域中及在使用每個術語的具體上下文中的一般意義。在本說明書中使用實例(包括本文論述的任何術語的實例)僅係說明性的,並且不以任何方式限制本揭示或任何示例性術語的範疇及意義。同樣,本揭示不限於本說明書中給出的各個實施例。 The terms used in this specification generally have their ordinary meaning in the art and in the specific context in which each term is used. The examples used in this specification (including examples of any terms discussed herein) are only illustrative, and do not limit the scope and meaning of this disclosure or any exemplary terms in any way. Likewise, the present disclosure is not limited to the various embodiments given in this specification.
儘管術語「第一」、「第二」等等可在本文中用於描述各個元件,此等元件不應當由此等術語限制。此等術語用於在元件之間進行區分。例如,在不脫離實施例的範疇之情況下,第一元件可以被稱為第二元件,並且類似地,第二元件可以被稱為第一元件。如本文使用,術語「及/或」包括一或多個相關聯的所列術語的任何及所有組合。 Although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish between elements. For example, without departing from the scope of the embodiment, the first element may be referred to as the second element, and similarly, the second element may be referred to as the first element. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed terms.
在本說明書中使用的術語「包含(comprise)」、「包含(comprising)」、「包括(include)」、「包括(including)」、「具有(has)」、「具有(having)」、等等係開放式的並且意謂「包含但不限於」。 The terms "comprise", "comprising", "include", "including", "has", "having", etc. used in this manual Equal is open-ended and means "including but not limited to."
現在參考第1圖。第1圖係根據本揭示的各個實施例的系統的示意圖。 Now refer to Figure 1. Figure 1 is a schematic diagram of a system according to various embodiments of the present disclosure.
如第1圖中說明性圖示,系統包括清潔裝置100及濃度量測裝置200。清潔裝置100包括貯槽110、管道120、泵130、加熱器140、過濾器150、及振蕩器160。另
一方面,濃度量測裝置200包括導管210、冷卻器220、濃度計230、風扇240、泵250、及處理器260。
As illustrated in Figure 1, the system includes a
在一些實施例中,現在參考清潔裝置100。管道120耦接到貯槽110。泵130的兩個終端分別耦接到管道120。以另一方式解釋,管道120延伸穿過泵130。加熱器140的兩個終端分別耦接到管道120。以另一方式解釋,管道120延伸穿過加熱器140。過濾器150的兩個終端分別耦接到管道120。以另一方式解釋,管道120延伸穿過過濾器150。
In some embodiments, reference is now made to the
在各個實施例中,現在參考濃度量測裝置200。導管210耦接到清潔裝置100的管道120。冷卻器220覆蓋導管210。濃度計230耦接到導管210。處理器260耦接到濃度計230、風扇240、及泵250。泵250耦接到導管210。
In various embodiments, reference is now made to the
以上論述僅描述了可以根據各個替代實施例進行的示例性連接。將理解,此種各個替代實施例不限於上文描述的具體連接或第1圖所示的那些連接。 The above discussion only describes exemplary connections that can be made in accordance with various alternative embodiments. It will be understood that such various alternative embodiments are not limited to the specific connections described above or those shown in Figure 1.
現在參考第2圖。第2圖係根據本揭示的各個實施例的用於操作第1圖中的系統的方法300的流程圖。 Refer now to Figure 2. FIG. 2 is a flowchart of a method 300 for operating the system in FIG. 1 according to various embodiments of the present disclosure.
如第2圖中說明性圖示,在操作310中,貯槽110用以容納液體500。液體500用於移除由製造流程產生的半導體裝置600的殘餘物。在一些實施例中,例如,液體500係蝕刻殘餘物移除劑、正光阻劑剝除劑、或用於移除在製造流程期間產生的殘餘物的任何適宜液體。在各個實施例中,例如,製造流程係用於製造半導體裝置的沉積流程、光阻劑塗佈流程、蝕刻流程、圖案化流程、移除流程、或其他流程。
As illustrated in FIG. 2, in
在操作320中,移動液體500以在管道120及貯槽110內部循環流動。在一些實施例中,貯槽110包括內貯槽112及外貯槽114。內貯槽112用以在內部容納液體500。若將半導體裝置600浸泡在液體500中並且內貯槽112溢流,則溢流的液體500進一步由外貯槽114容納。在各個實施例中,液體500的循環從外貯槽114開始,打開閥門121來讓外貯槽114中的液體500流過此閥門到管道120中,並且隨後打開閥門123來讓內貯槽112中的液體500流過此閥門到管道120中。然後,液體500流過閥門121、123到泵130中,並且泵130移動管道120中的液體500。在一些實施例中,例如,泵130係用於藉由機械作用移動管道120中的液體500的揚升泵、位移泵、重力泵、或任何適宜裝置。
In
若貯槽112中的液體500不足且溫度不高於預定溫度,則關閉閥門125並且打開閥門127來讓液體500流過此閥門到管道120中。接下來,液體500流過加熱器140並且藉由此加熱器加熱。若貯槽112中的液體500不足且溫度不高於預定溫度,則液體500從旁邊穿過閥門129到內貯槽112中。在一些實施例中,在貯槽112中的液體500不足且溫度不高於預定溫度的條件下,管道120的壓力及液體500的厚度均過高。在此種條件下,液體500不能流過過濾器150,或過濾器150將因管道120中的高壓或液體500的高厚度受損。在各個實施例中,例如,閥門121、123、125、127、129係用於控制液體500流過此等閥門的液壓閥、氣動閥、或任何適宜閥門。在一些實施例中,例如,加熱器140
係用於加熱液體500的電熱器、加熱燈、加熱套、或任何適宜裝置。
If the liquid 500 in the
當貯槽112中的液體500足夠並且溫度高於預定溫度時,半導體裝置600的殘餘物可以藉由清潔裝置100移除。在移除半導體裝置600的殘餘物之後,在液體500中存在顆粒。過濾器150用以過濾液體500中的顆粒。在此種條件下,液體500的循環從外貯槽114開始,打開閥門121來讓外貯槽114中的液體500流過此閥門到管道120中,並且隨後打開閥門123來讓內貯槽112中的液體500流過此閥門到管道120中。然後,液體500流過閥門121、123到泵130中,並且泵130移動管道120中的液體500。接下來,打開閥門125並且關閉閥門127來讓液體500流過閥門125到過濾器150中。過濾器150過濾液體500中的顆粒並且將不具有顆粒的液體500提供到內貯槽112。在一些實施例中,貯槽110的容量係在70公升至120公升的範圍中。若貯槽110的容量過高,則難以冷卻貯槽110中的液體500。另一方面,若貯槽110的容量過低,則難以使用足夠液體500來移除半導體裝置600的殘餘物,使得貯槽110的容量係在預定範圍中。
When the liquid 500 in the
在操作330中,導管210用以從管道120取回及遞送液體500。如第1圖中說明性圖示,導管210從管道120的節點N1取回液體500。然而,在各個實施例中,取決於實際需要,導管210可從管道120的節點N2或管道120的任何適宜部分取回液體500。在一些實施例中,管道120的直徑
係在3公分至10公分的範圍中。在各個實施例中,例如,管道120的直徑係10公分。若管道120的直徑過高,則泵250難以移動管道120內部的液體500。另一方面,若管道120的直徑過低,則難以讓液體500在管道120及貯槽內部循環移動,使得管道120的直徑係在預定範圍中。在一些實施例中,導管的直徑係在5毫米至1公分的範圍中。在各個實施例中,例如,導管210的直徑係5毫米。導管210用於取樣,並且導管210的直徑可小於管道120的直徑。液體500在導管210中的流動速率與導管210的橫截面成反比。由此,若導管210的直徑小於5毫米,則液體500在導管210中的流動速率將過快。當液體500在導管210中的流動速率過快時,藥劑不具有足夠時間來與液體500混合,使得液體500的濃度將低於實際濃度,並且濃度計230的量測結果不精確。相反地,若導管210的直徑大於1公分,則液體500在導管210中的流動速率將過低。當液體500在導管210中的流動速率過低時,濃度計230不能量測液體500的濃度。
In
在操作340中,冷卻器220用以冷卻由導管210遞送的液體500。如第1圖中說明性圖示,冷卻器220覆蓋導管210,以便有效地冷卻由導管210遞送的液體500。在一些實施例中,例如,冷卻器220係水冷卻設備。為了便於理解冷卻器220的結構,現在參考第3圖。第3圖係根據本揭示的各個實施例的如第1圖所示的系統的冷卻器220的示意圖。
In
如第3圖中說明性圖示,冷卻器220包括螺旋軟管222,並且螺旋軟管222圍繞導管210設置。在一些實施例中,螺旋軟管222圍繞導管210設置並且接觸導管210,用於促進冷卻器220冷卻由導管210遞送的液體500。在各個實施例中,例如,螺旋軟管222係聚胺基甲酸酯(Polyurethane,PU)管、聚氯乙烯(PolyVinyl Chloride,PVC)管、或任何適宜種類的管。在一些實施例中,例如,螺旋軟管222中的液體係用於在螺旋軟管222中循環移動以冷卻由導管210遞送的液體500的去離子水、冷凝液、或任何適宜液體。
As illustrated in FIG. 3, the cooler 220 includes a
如第3圖中說明性圖示,冷卻器220包括泵224,泵224耦接到螺旋軟管222,並且泵224用以移動螺旋軟管222中的液體。在各個實施例中,泵224鄰近如第1圖所示的節點N1設置。在一些實施例中,例如,泵224係潛水泵、陸上泵、或用於移動螺旋軟管222中的液體的任何適宜的泵。如第3圖中說明性圖示,泵224在逆時針方向上移動液體。然而,取決於實際需求,泵224可在順時針方向上移動液體。
As illustrated in FIG. 3, the cooler 220 includes a
以上論述僅描述了可以根據各個替代實施例進行的示例性連接及操作。將理解,此種各個替代實施例不限於上文描述的具體連接及操作或第3圖所示的那些連接及操作。 The above discussion only describes exemplary connections and operations that can be made in accordance with various alternative embodiments. It will be understood that such various alternative embodiments are not limited to the specific connections and operations described above or those shown in FIG. 3.
為了理解冷卻器220的結構,現在參考第4圖。第4圖係根據本揭示的各個實施例的如第1圖所示的系統的冷卻器220的示意圖。 In order to understand the structure of the cooler 220, refer now to FIG. 4. Fig. 4 is a schematic diagram of the cooler 220 of the system shown in Fig. 1 according to various embodiments of the present disclosure.
如第4圖中說明性圖示,例如,冷卻器220包括冷凝器226。導管210可在冷凝器226內部設置。以另一方式解釋,冷凝器226完全覆蓋導管210。在各個實施例中,例如,冷凝器226中的液體係用於在冷凝器226中循環移動以冷卻由導管210遞送的液體500的去離子水、冷凝液、或任何適宜液體。
As illustrated in FIG. 4, for example, the cooler 220 includes a
如第4圖中說明性圖示,冷卻器220包括泵224,泵224耦接到冷凝器226,並且泵224用以移動冷凝器226中的液體。在各個實施例中,泵224鄰近如第1圖所示的節點N1設置。如第4圖中說明性圖示,泵224在順時針方向上移動液體。然而,取決於實際需求,泵224可在逆時針方向上移動液體。
As illustrated in Figure 4, the cooler 220 includes a
以上論述僅描述了可以根據各個替代實施例進行的示例性連接及操作。將理解,此種各個替代實施例不限於上文描述的具體連接及操作或第4圖所示的那些連接及操作。 The above discussion only describes exemplary connections and operations that can be made in accordance with various alternative embodiments. It will be understood that such various alternative embodiments are not limited to the specific connections and operations described above or those shown in FIG. 4.
在一些實施例中,例如,冷卻器220係空氣冷卻設備。空氣冷卻設備設置在導管210的側面。為了促進理解冷卻器220的結構,現在參考第5圖。第5圖係根據本揭示的各個實施例的如第1圖所示的系統的冷卻器220的示意圖。
In some embodiments, for example, the cooler 220 is an air cooling device. The air cooling device is arranged on the side of the
如第5圖中說明性圖示,冷卻器220包括外殼228及風扇221。外殼228覆蓋導管210。風扇221用以吹動外殼228內部的空氣,使得可冷卻由導管210遞送的液體500。
As illustrated in FIG. 5, the cooler 220 includes a
如第5圖中說明性圖示,在一些實施例中,風扇221設置在第1圖中的濃度計230的側面。此設置可幫助風扇221保持遠離第1圖中的加熱器140,或風扇221將由加熱器140產生的熱吹到第1圖中的導管210及濃度計230。
As illustrated in Figure 5, in some embodiments, the
以上論述僅描述了可以根據各個替代實施例進行的示例性連接及操作。將理解,此種各個替代實施例不限於上文描述的具體連接及操作或第5圖所示的彼等連接及操作。 The above discussion only describes exemplary connections and operations that can be made in accordance with various alternative embodiments. It will be understood that such various alternative embodiments are not limited to the specific connections and operations described above or their connections and operations shown in FIG. 5.
在操作350中,濃度計230用以量測由冷卻器220冷卻的液體500的濃度。在各個實施例中,在貯槽110中的液體500的溫度係在攝氏65度至攝氏80度的範圍中。在一些實施例中,在貯槽110中的液體500的溫度係約攝氏70度。在液體500中混合的藥劑的性質將藉由增加其溫度並且將水添加到液體500來保持其流動速率而呈現。當液體500的溫度低於攝氏65度時,液體500的濃度將過高而不能移除半導體裝置600的殘餘物。相反地,當液體500的溫度高於攝氏80度時,液體500的移除速率過高,使得半導體裝置600可能受液體500損壞。
In
在一些實施例中,在貯槽110中的液體500的溫度係在攝氏65度至攝氏80度的範圍中。在各個實施例中,
在貯槽110中的液體500的溫度係在攝氏110度至攝氏120度的範圍中。若導管210將具有此高溫的液體500遞送到濃度計230,則來自濃度計230的液體500的量測結果係不精確的。由此,冷卻器220用以在約兩分鐘內將由導管210遞送的液體500冷卻到預定溫度。與在三十分鐘或更多時間內將導管中的液體冷卻到一溫度的先前技術相比,本揭示提供了具有覆蓋導管210的冷卻器220的系統,此冷卻器可在約兩分鐘內將由導管210遞送的液體500冷卻到一溫度。由此,藉由第1圖中的本揭示的系統來更有效地冷卻液體500。
In some embodiments, the temperature of the liquid 500 in the
另一方面,在各個實施例中,冷卻器220將導管210中的液體500冷卻到在攝氏26度至攝氏29度的範圍中的溫度。在一些實施例中,冷卻器220將導管210中的液體500冷卻到小於攝氏29度的溫度。因此,第1圖中提供的系統可將由導管210遞送的液體500冷卻到濃度計230可精確地量測液體500的溫度。
On the other hand, in various embodiments, the cooler 220 cools the liquid 500 in the
在操作360中,風扇240用以冷卻濃度量測裝置200。在各個實施例中,在濃度量測裝置200中的風扇240用於冷卻處理器260。然而,歸因於風扇240在濃度量測裝置200內部設置,風扇240有助於冷卻由導管210遞送的液體500。在一些實施例中,風扇240設置在濃度計230的側面。此種設置可幫助風扇240保持遠離加熱器140,並且風扇240將由加熱器140產生的熱吹到濃度量測裝置200。
In
在操作370中,泵250用以根據液體500的濃度將液體提供到貯槽110中。在操作380中,加熱器140用以
將液體加熱到高溫以移除由製造流程產生的半導體裝置600的殘餘物。
In
在一些實施例中,振蕩器160連同貯槽110中的液體500用以移除由製造流程產生的半導體裝置600的殘餘物。在一些實施例中,例如,振蕩器160係超音波振蕩器。超音波振蕩器用於提供超音波以幫助半導體裝置600移除由製造流程產生的殘餘物。在各個實施例中,處理器260在濃度計230與泵250之間耦接,並且處理器260用以根據液體500的濃度控制泵250,以將液體提供到管道120中,以便調節液體500的濃度。在一些實施例中,貯槽110進一步包括外貯槽116。若將半導體裝置600浸泡在液體500中並且內貯槽112溢流,則溢流的液體500進一步由外貯槽114容納。然而,若外貯槽114亦溢流,則溢流的液體500可進一步由外貯槽116容納。
In some embodiments, the
現在參考第6圖。第6圖係根據本揭示的各個實施例的系統的示意圖。 Refer now to Figure 6. Figure 6 is a schematic diagram of a system according to various embodiments of the present disclosure.
如第6圖中說明性圖示,第3圖至第4圖中用於移動螺旋軟管222及冷凝器226中液體的泵224,可由第6圖中的泵250替代。第6圖中的泵250耦接到冷卻器220及濃度計230二者。泵250用以移動冷卻器220中的液體來用於冷卻由導管210遞送的液體500,並且根據液體500的濃度將液體提供到貯槽110中。由此,由於第6圖中的泵250用作冷卻器220的泵,在冷卻器220內部的第3圖至第4圖中的泵
224可減少。在各個實施例中,例如,泵250為去離子尖峰泵。
As illustrated in FIG. 6, the
以上論述僅描述了可以根據各個替代實施例進行的示例性連接及操作。將理解,該各個替代實施例不限於上文描述的具體連接及操作或第6圖所示的那些連接及操作。 The above discussion only describes exemplary connections and operations that can be made in accordance with various alternative embodiments. It will be understood that the various alternative embodiments are not limited to the specific connections and operations described above or those shown in FIG. 6.
現在參考第7圖。第7圖係根據本揭示的各個實施例的系統的示意圖。 Now refer to Figure 7. Figure 7 is a schematic diagram of a system according to various embodiments of the present disclosure.
如第7圖中說明性圖示,第3圖至第4圖中用於移動螺旋軟管222及冷凝器226中液體的泵224,可由第7圖中的泵260替代。泵250耦接到濃度計230及處理器260。泵250用以由處理器260根據液體500的濃度將液體提供到貯槽110中。另一方面,泵260耦接到冷卻器220並且鄰近濃度計230設置。在一些實施例中,以並聯方式設置泵260與泵250。泵260用以移動冷卻器220中的液體來用於冷卻由導管210遞送的液體500。在各個實施例中,例如,泵250及泵260為去離子尖峰泵。
As illustrated in Fig. 7, the
以上論述僅描述了可以根據各個替代實施例進行的示例性連接及操作。將理解,此種各個替代實施例不限於上文描述的具體連接及操作或第7圖所示的那些連接及操作。 The above discussion only describes exemplary connections and operations that can be made in accordance with various alternative embodiments. It will be understood that such various alternative embodiments are not limited to the specific connections and operations described above or those shown in FIG. 7.
現在參考第8圖。第8圖係根據本揭示的各個實施例的系統的示意圖。 Refer now to Figure 8. Figure 8 is a schematic diagram of a system according to various embodiments of the present disclosure.
如第8圖中說明性圖示,清潔裝置100進一步包括至少一個空氣閥門129,空氣閥門129用於控制液體500在管道120中的流動路徑,並且將用於控制至少一個空氣閥門129的空氣遞送到冷卻器220,以冷卻由導管210遞送的液體500。在一些實施例中,例如,閥門129係氣動閥。閥門129由此由空氣控制,並且藉由管道170將空氣遞送到冷卻器220來用於冷卻由導管210遞送的液體500。
As illustrated in Figure 8, the
為了理解冷卻器220的結構,現在參考第9圖。第9圖係根據本揭示的各個實施例的如第8圖所示的系統的冷卻器220的示意圖。 In order to understand the structure of the cooler 220, refer now to FIG. 9. FIG. 9 is a schematic diagram of the cooler 220 of the system shown in FIG. 8 according to various embodiments of the present disclosure.
如第8圖中說明性圖示,冷卻器220包括螺旋軟管223,並且螺旋軟管222圍繞導管210設置。在一些實施例中,螺旋軟管223圍繞導管210設置並且接觸導管210,用於促進冷卻器220冷卻由導管210遞送的液體500。在各個實施例中,螺旋軟管223用以遞送空氣,用於控制閥門129,從而用於冷卻由導管210遞送的液體500。然而,在一些實施例中,例如,閥門121、123、125、127係氣動閥。由此,取決於實際需要,螺旋軟管223用以遞送空氣來用於控制閥門121、123、125、127。在各個實施例中,例如,螺旋軟管223係聚胺基甲酸酯(PU)管、聚氯乙烯(PVC)管、或任何適宜種類的管。
As illustrated in FIG. 8, the cooler 220 includes a
以上論述僅描述了可以根據各個替代實施例進行的示例性連接及操作。將理解,該各個替代實施例不限於 上文描述的具體連接及操作或第9圖所示的那些連接及操作。 The above discussion only describes exemplary connections and operations that can be made in accordance with various alternative embodiments. It will be understood that the various alternative embodiments are not limited to The specific connections and operations described above or those shown in Figure 9.
現在參考第10圖。第10圖係根據本揭示的各個實施例的如第1圖中示出的半導體裝置600的橫截面圖的示意圖。如圖所示,圖案化的遮罩604在半導體基板602上形成。現在參考第11圖。第11圖係根據本揭示的各個實施例的如第1圖中示出的半導體裝置600的橫截面圖的示意圖。如圖所示,可蝕刻半導體基板602的暴露部分以在半導體基板602中形成溝槽702。半導體基板602在相鄰溝槽702之間的區域形成鰭片704。溝槽702可藉由在圖案化的遮罩604上方形成介電層706以及實質上填充溝槽702來填充。現在參考第12圖。第12圖係根據本揭示的各個實施例的如第1圖中示出的半導體裝置600的剖面圖。如圖所示,移除圖案化的遮罩604。在移除圖案化的遮罩604之後,一些殘餘物仍在半導體裝置600上。此時,將半導體裝置600放入用液體500填充的貯槽110中,並且液體500用於移除半導體裝置600的殘餘物。
Refer now to Figure 10. FIG. 10 is a schematic diagram of a cross-sectional view of the
本揭示亦提供一種系統。此系統包括貯槽、導管、冷卻器、及濃度計。貯槽用以容納第一液體。導管耦接到貯槽並且用以從貯槽遞送第一液體。冷卻器覆蓋導管以冷卻由導管遞送的第一液體。濃度計用以量測由冷卻器冷卻的第一液體的濃度。 The disclosure also provides a system. This system includes storage tanks, ducts, coolers, and concentration meters. The storage tank is used to hold the first liquid. The conduit is coupled to the sump and used to deliver the first liquid from the sump. The cooler covers the conduit to cool the first liquid delivered by the conduit. The concentration meter is used to measure the concentration of the first liquid cooled by the cooler.
在一些實施例中,冷卻器包括覆蓋導管的水冷卻設備,並且水冷卻設備包括圍繞導管設置的螺旋軟管。 In some embodiments, the cooler includes a water cooling device covering the conduit, and the water cooling device includes a spiral hose disposed around the conduit.
在各個實施例中,水冷卻設備包括冷凝器,並且管在冷凝器內部設置。 In various embodiments, the water cooling device includes a condenser, and the tube is provided inside the condenser.
在一些實施例中,系統進一步包括泵。泵耦接到冷卻器及濃度計。泵用以移動冷卻器中的第二液體來用於冷卻由導管遞送的第一液體,並且根據第一液體的濃度將第二液體提供到貯槽中。 In some embodiments, the system further includes a pump. The pump is coupled to the cooler and the concentration meter. The pump is used to move the second liquid in the cooler to cool the first liquid delivered by the conduit, and supply the second liquid to the storage tank according to the concentration of the first liquid.
在各個實施例中,系統進一步包括第一泵及第二泵。第一泵耦接到濃度計。第一泵用以根據第一液體的濃度將第二液體提供到貯槽中。第二泵耦接到冷卻器並且鄰近濃度計設置。以並聯方式設置第二泵與第一泵。第二泵用以移動冷卻器中的第二液體來用於冷卻由導管遞送的第一液體。 In various embodiments, the system further includes a first pump and a second pump. The first pump is coupled to the concentration meter. The first pump is used for supplying the second liquid to the storage tank according to the concentration of the first liquid. The second pump is coupled to the cooler and is located adjacent to the concentration meter. The second pump and the first pump are arranged in parallel. The second pump is used to move the second liquid in the cooler for cooling the first liquid delivered by the catheter.
在一些實施例中,系統進一步包括處理器。處理器在濃度計與第一泵之間耦接。處理器用以根據第一液體的濃度控制第一泵。 In some embodiments, the system further includes a processor. The processor is coupled between the concentration meter and the first pump. The processor is used for controlling the first pump according to the concentration of the first liquid.
在各個實施例中,冷卻器包括設置在導管的側面的空氣冷卻設備。 In various embodiments, the cooler includes an air cooling device provided on the side of the duct.
在一些實施例中,空氣冷卻設備包括外殼及風扇。外殼覆蓋導管。風扇設置在濃度計的側面並且用以吹動外殼內部的空氣。 In some embodiments, the air cooling device includes a housing and a fan. The casing covers the duct. The fan is arranged on the side of the densitometer and used to blow the air inside the housing.
本揭示亦提供一種包括清潔裝置及濃度量測裝置的系統。清潔裝置包括貯槽及管道。貯槽用以容納第一液體。管道耦接到貯槽。第一液體在管道及貯槽內部循環流動。濃度量測裝置包括導管、冷卻器、濃度計、及風扇。導 管耦接到管道並且用以從管道遞送第一液體。冷卻器覆蓋導管以冷卻由導管遞送的第一液體。濃度計用以量測由冷卻器冷卻的第一液體的濃度。風扇設置在濃度計的側面以冷卻濃度量測裝置。 The present disclosure also provides a system including a cleaning device and a concentration measuring device. The cleaning device includes a storage tank and a pipeline. The storage tank is used to hold the first liquid. The pipe is coupled to the storage tank. The first liquid circulates inside the pipeline and the storage tank. The concentration measuring device includes a duct, a cooler, a concentration meter, and a fan. guide The tube is coupled to the pipe and used to deliver the first liquid from the pipe. The cooler covers the conduit to cool the first liquid delivered by the conduit. The concentration meter is used to measure the concentration of the first liquid cooled by the cooler. A fan is installed on the side of the concentration meter to cool the concentration measuring device.
在一些實施例中,清潔裝置進一步包括用於控制第一液體在管道中的流動路徑的至少一個空氣閥門,並且將用於控制至少一個空氣閥門的空氣遞送到冷卻器來用於冷卻由導管遞送的第一液體。 In some embodiments, the cleaning device further includes at least one air valve for controlling the flow path of the first liquid in the pipe, and the air used for controlling the at least one air valve is delivered to the cooler for cooling delivered by the duct The first liquid.
在各個實施例中,冷卻器包括螺旋軟管。螺旋軟管圍繞導管設置,並且螺旋軟管用以遞送空氣,用於控制至少一個空氣閥門,從而用於冷卻由導管遞送的第一液體。 In various embodiments, the cooler includes a spiral hose. The spiral hose is arranged around the catheter, and the spiral hose is used to deliver air, for controlling at least one air valve, and thereby for cooling the first liquid delivered by the catheter.
在一些實施例中,冷卻器包括外殼。外殼覆蓋導管。將用於控制空氣閥門的空氣遞送到外殼來用於吹動外殼內部的空氣。 In some embodiments, the cooler includes a housing. The casing covers the duct. The air used to control the air valve is delivered to the housing for blowing the air inside the housing.
在各個實施例中,冷卻器包括外殼及風扇。外殼覆蓋導管。風扇設置在濃度計的側面並且用以吹動外殼內部的空氣。 In various embodiments, the cooler includes a housing and a fan. The casing covers the duct. The fan is arranged on the side of the densitometer and used to blow the air inside the housing.
在一些實施例中,冷卻器包括水冷卻設備。水冷卻設備覆蓋導管。水冷卻設備包括螺旋軟管。螺旋軟管圍繞導管設置。 In some embodiments, the cooler includes a water cooling device. Water cooling equipment covers the ducts. Water cooling equipment includes spiral hoses. The spiral hose is arranged around the conduit.
在各個實施例中,濃度量測裝置進一步包括泵。泵耦接到冷卻器及濃度計。泵用以移動冷卻器中的第二液體來用於冷卻由導管遞送的第一液體,並且根據第一液體的濃度將第二液體提供到管道中。 In various embodiments, the concentration measuring device further includes a pump. The pump is coupled to the cooler and the concentration meter. The pump is used to move the second liquid in the cooler to cool the first liquid delivered by the conduit, and supply the second liquid into the pipeline according to the concentration of the first liquid.
在一些實施例中,濃度量測裝置包括第一泵及第二泵。第一泵耦接到濃度計。第二泵用以根據第一液體的濃度將第二液體提供到管道中。第二泵耦接到冷卻器並且鄰近濃度計設置。以並聯方式設置第二泵與第一泵。第二泵用以移動冷卻器中的第二液體來用於冷卻由導管遞送的第一液體。 In some embodiments, the concentration measuring device includes a first pump and a second pump. The first pump is coupled to the concentration meter. The second pump is used for supplying the second liquid into the pipeline according to the concentration of the first liquid. The second pump is coupled to the cooler and is located adjacent to the concentration meter. The second pump and the first pump are arranged in parallel. The second pump is used to move the second liquid in the cooler for cooling the first liquid delivered by the catheter.
在各個實施例中,濃度量測裝置包括處理器。處理器在濃度計與第一泵之間耦接。處理器用以根據第一液體的濃度控制第一泵,並且風扇用以冷卻處理器。 In various embodiments, the concentration measurement device includes a processor. The processor is coupled between the concentration meter and the first pump. The processor is used for controlling the first pump according to the concentration of the first liquid, and the fan is used for cooling the processor.
本揭示亦提供一種包括以下操作的方法。經由導管從貯槽導出處於第一溫度的第一液體。藉由覆蓋導管的冷卻器將由導管遞送的第一液體冷卻到第二溫度。量測處於第二溫度的由導管遞送的第一液體的濃度。根據第一液體的濃度將第二液體提供到貯槽中。將第一液體加熱到第一溫度以移除由製造流程產生的半導體裝置的殘餘物。 The present disclosure also provides a method including the following operations. The first liquid at the first temperature is led out from the storage tank via the conduit. The first liquid delivered by the catheter is cooled to a second temperature by a cooler covering the catheter. The concentration of the first liquid delivered by the catheter at the second temperature is measured. The second liquid is supplied to the storage tank according to the concentration of the first liquid. The first liquid is heated to a first temperature to remove residues of the semiconductor device generated by the manufacturing process.
在一些實施例中,藉由覆蓋導管的冷卻器將由導管遞送的第一液體冷卻到第二溫度包括:藉由包含圍繞導管設置的螺旋軟管的水冷卻設備將由導管遞送的第一液體冷卻到第二溫度。 In some embodiments, cooling the first liquid delivered by the catheter to the second temperature by the cooler covering the catheter includes: cooling the first liquid delivered by the catheter to the second temperature by a water cooling device including a spiral hose disposed around the catheter The second temperature.
在一些實施例中,藉由覆蓋導管的冷卻器將由導管遞送的第一液體冷卻到第二溫度包括:藉由包含覆蓋導管的外殼及吹動外殼內部的空氣的風扇的空氣冷卻設備將由導管遞送的第一液體冷卻到第二溫度。 In some embodiments, cooling the first liquid delivered by the duct to the second temperature by the cooler covering the duct includes: the duct is delivered by an air cooling device including a casing covering the duct and a fan that blows air inside the casing The first liquid is cooled to a second temperature.
上文概述若干實施例的特徵,使得熟習此項技術者可更好地理解本揭示的態樣。熟習此項技術者應瞭解,可輕易使用本揭示作為設計或修改其他製程及結構的基礎,以便實施本文所介紹的實施例的相同目的及/或實現相同優點。熟習此項技術者亦應認識到,此類等效構造並未脫離本揭示的精神及範疇,且可在不脫離本揭示的精神及範疇的情況下進行本文的各種變化、替代及更改。 The features of several embodiments are summarized above so that those skilled in the art can better understand the aspect of the present disclosure. Those familiar with the art should understand that the present disclosure can be easily used as a basis for designing or modifying other processes and structures in order to implement the same purpose and/or achieve the same advantages of the embodiments described herein. Those familiar with the art should also realize that such equivalent structures do not depart from the spirit and scope of the present disclosure, and various changes, substitutions and alterations in this article can be made without departing from the spirit and scope of the present disclosure.
N1、N2‧‧‧節點 N1、N2‧‧‧node
100‧‧‧清潔裝置 100‧‧‧Cleaning device
110‧‧‧貯槽 110‧‧‧Tank
112‧‧‧內貯槽 112‧‧‧Inner storage tank
114、116‧‧‧外貯槽 114、116‧‧‧External storage tank
120‧‧‧管道 120‧‧‧Pipe
130‧‧‧泵 130‧‧‧Pump
140‧‧‧加熱器 140‧‧‧Heater
150‧‧‧過濾器 150‧‧‧Filter
160‧‧‧振蕩器 160‧‧‧Oscillator
121、123、125、127、129‧‧‧閥門 121, 123, 125, 127, 129‧‧‧valve
200‧‧‧濃度量測裝置 200‧‧‧Concentration measuring device
210‧‧‧導管 210‧‧‧Conduit
220‧‧‧冷卻器 220‧‧‧Cooler
230‧‧‧濃度計 230‧‧‧Concentration meter
240‧‧‧風扇 240‧‧‧Fan
250‧‧‧泵 250‧‧‧Pump
260‧‧‧處理器 260‧‧‧Processor
500‧‧‧液體 500‧‧‧Liquid
600‧‧‧半導體裝置 600‧‧‧Semiconductor device
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US201862733627P | 2018-09-20 | 2018-09-20 | |
US62/733,627 | 2018-09-20 | ||
US16/510,552 US11227780B2 (en) | 2018-09-20 | 2019-07-12 | System and method for operating the same |
US16/510,552 | 2019-07-12 |
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US6146469A (en) * | 1998-02-25 | 2000-11-14 | Gamma Precision Technology | Apparatus and method for cleaning semiconductor wafers |
TW200947171A (en) * | 2007-11-27 | 2009-11-16 | Air Liquide | Improved reclaim function for semiconductor processing systems |
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