TW202030504A - Prism, optical device, method for manufacturing prism, and method for manufacturing package device - Google Patents
Prism, optical device, method for manufacturing prism, and method for manufacturing package device Download PDFInfo
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Abstract
Description
本發明係關於一種稜鏡、光裝置、稜鏡之製造方法及封裝裝置之製造方法。The present invention relates to a method for manufacturing a beam, an optical device, a method for manufacturing a beam, and a packaging device.
近年來,顯示器、汽車之頭燈或投影機等用途中,廣泛使用用於使來自光源之光反射或折射之稜鏡。下述之專利文獻1中揭示有包含此種稜鏡之光裝置之一例。專利文獻1中,於包含半導體碟片之安裝基板上配置有雷射晶片及稜鏡。雷射晶片及稜鏡藉由焊料接合於安裝基板。
先前技術文獻
專利文獻In recent years, in applications such as displays, car headlights, or projectors, there has been widespread use for reflecting or refracting light from a light source. The following
[專利文獻1]日本專利特開2000-091688號公報[Patent Document 1] Japanese Patent Laid-Open No. 2000-091688
[發明所欲解決之問題][The problem to be solved by the invention]
光裝置中,由於需要以較高之精度調整光路之方向,故對於稜鏡之接合配置要求較高之位置精度。然而,於將光出射至稜鏡之光源使用高輸出之LD(Laser Diode,雷射二極體)等之情形時,若使用包含樹脂之接著劑將稜鏡接合配置於安裝基板等,則有接著劑發生軟化,產生稜鏡之位置偏移之虞。另一方面,如專利文獻1中所記載般之使用焊料之安裝,由於伴隨有焊料全體之熔融流動,故有於安裝之前後產生稜鏡之高度方向之位置偏移之虞。因此,對於如專利文獻1中所記載般之稜鏡,於將其接合配置於安裝基板等之情形時,較難充分地提高位置精度。又,即便於組裝之作業性或成本等方面亦存在問題。In the optical device, since it is necessary to adjust the direction of the light path with higher accuracy, a higher position accuracy is required for the joint arrangement of the 稜鏡. However, when a high-output LD (Laser Diode) is used as the light source that emits light to the beam, if a resin-containing adhesive is used to connect the beam to the mounting substrate, etc. The adhesive is softened, causing the risk of shifting the position of the nail. On the other hand, the mounting using solder as described in
本發明之目的在於提供一種可有效地提高光裝置中之位置精度之稜鏡及使用該稜鏡之光裝置以及稜鏡之製造方法及封裝裝置之製造方法。 [解決問題之技術手段]The object of the present invention is to provide an optical device that can effectively improve the position accuracy of the optical device, the optical device using the optical device, the manufacturing method of the optical device, and the manufacturing method of the packaging device. [Technical means to solve the problem]
本發明之稜鏡之特徵在於具備:稜鏡本體,其具有底面及連接於底面之斜面;及密接膜,其設置於底面;且密接膜具有位於稜鏡本體側之第1層部分、與直接或間接地積層於第1層部分上之第2層部分,且第2層部分包含Au層及Sn層中之至少一層。The characteristic of the scallop of the present invention is that it has: a scallop body having a bottom surface and an inclined surface connected to the bottom surface; and an adhesive film disposed on the bottom surface; and the adhesive film has a first layer part on the side of the scallop body, and a direct Or the second layer part is indirectly laminated on the first layer part, and the second layer part includes at least one of the Au layer and the Sn layer.
較佳為,於第2層部分中, Au層及Sn層交替地積層。Preferably, in the second layer portion, Au layers and Sn layers are alternately laminated.
較佳為,第2層部分具有Au層及Sn層之兩者,且於Au層與Sn層之間設置有包含Au及Sn之合金之Au-Sn層。Preferably, the second layer portion has both an Au layer and a Sn layer, and an Au-Sn layer including an alloy of Au and Sn is arranged between the Au layer and the Sn layer.
於密接膜之積層方向上,於將遠離稜鏡本體之側設為外側時,第2層部分之最外層較佳為Au層。In the lamination direction of the adhesive film, when the side away from the main body of the scallop is set to the outside, the outermost layer of the second layer portion is preferably an Au layer.
較佳為,第2層部分具有複數個Au層及複數個Sn層之兩者,Au層及Sn層交替地積層,且第2層部分具有應力緩和層,於應力緩和層為複數個Au層中之一層之情形時,應力緩和層之厚度與其他Au層之平均厚度不同,於應力緩和層為複數個Sn層中之一層之情形時,應力緩和層之厚度與其他Sn層之平均厚度不同。於該情形時,應力緩和層之厚度更較佳為其他Au層或其他Sn層之平均厚度之1/2以上、5倍以下。又,應力緩和層之厚度更佳為其他Au層或其他Sn層之平均厚度之1/5以上、1/2以下。Preferably, the second layer part has a plurality of Au layers and a plurality of Sn layers, the Au layers and Sn layers are alternately laminated, and the second layer part has a stress relaxation layer, and the stress relaxation layer is a plurality of Au layers In the case of one of the layers, the thickness of the stress relaxation layer is different from the average thickness of other Au layers. When the stress relaxation layer is one of a plurality of Sn layers, the thickness of the stress relaxation layer is different from the average thickness of other Sn layers . In this case, the thickness of the stress relaxation layer is more preferably 1/2 or more and 5 times or less of the average thickness of other Au layers or other Sn layers. In addition, the thickness of the stress relaxation layer is more preferably 1/5 or more and 1/2 or less of the average thickness of other Au layers or other Sn layers.
較佳為,於密接膜之積層方向上,於將遠離稜鏡本體之側設為外側時,第2層部分之最外層為第2層部分中最薄之層。於該情形時,第2層部分中,更佳為越位於外側之層則越薄Preferably, in the lamination direction of the adhesive film, when the side away from the main body is set to the outside, the outermost layer of the second layer portion is the thinnest layer in the second layer portion. In this case, in the second layer, it is more preferable that the layer on the outside is thinner
較佳為,第2層部分具有複數個Au層及複數個Sn層之兩者,複數個Au層之厚度互為相同,且複數個Sn層之厚度越位於外側則越厚。Preferably, the second layer portion has both of a plurality of Au layers and a plurality of Sn layers, and the thickness of the plurality of Au layers is the same as each other, and the thickness of the plurality of Sn layers is thicker the outside.
較佳為,第2層部分具有複數個Au層及複數個Sn層之兩者,複數個Au層之厚度越位於外側則越薄,且複數個Sn層之厚度互為相同。Preferably, the second layer portion has both of a plurality of Au layers and a plurality of Sn layers, and the thickness of the plurality of Au layers becomes thinner as they are located outside, and the thickness of the plurality of Sn layers is the same.
第2層部分中之Au層及Sn層之合計層數較佳為3層以上、99層以下。於該情形時,第2層部分中之Au層及Sn層之合計層數更佳為15層以上、35層以下。The total number of Au layers and Sn layers in the second layer portion is preferably 3 layers or more and 99 layers or less. In this case, the total number of layers of the Au layer and the Sn layer in the second layer portion is more preferably 15 layers or more and 35 layers or less.
密接膜之全體厚度較佳為1 μm以上、10 μm以下。The overall thickness of the adhesive film is preferably 1 μm or more and 10 μm or less.
第2層部分具有Au層及Sn層之兩者,於將第2層部分中之Au之重量之合計設為MA 、將Sn之重量之合計設為MS 、將Au之重量相對於Au及Sn之重量之合計之比率設為MA /(MA +MS )時,比率MA /(MA +MS )較佳為0.65以上、0.78以下,更佳為0.60以上、0.75以下。The second layer part has both an Au layer and a Sn layer. In the second layer part, the total weight of Au is M A , the total weight of Sn is M S , and the weight of Au is relative to Au the ratio of the total weight of Sn and the set of M A / (M A + M S) , the ratio M A / (M A + M S) is preferably 0.65 or more and 0.78 or less, more preferably 0.60 or more and 0.75 or less.
本發明之另一態樣中之稜鏡係安裝於封裝體者,其具備:稜鏡本體,其具有底面及連接於底面之斜面;及密接膜,其設置於底面;且密接膜具有位於稜鏡本體側之第1層部分、與直接或間接地積層於第1層部分上之第2層部分,且第2層部分係包含Au及Sn之合金之Au-Sn層,密接膜之第2層部分之厚度為2.5 μm以上、5.9 μm以下。In another aspect of the present invention, the bead is installed in a package, and it has: a bead body having a bottom surface and an inclined surface connected to the bottom surface; and an adhesive film provided on the bottom surface; and the adhesive film has an edge The first layer part of the mirror body side and the second layer part directly or indirectly laminated on the first layer part, and the second layer part is the Au-Sn layer containing the alloy of Au and Sn, and the second layer of the adhesive film The thickness of the layer is 2.5 μm or more and 5.9 μm or less.
較佳為,於密接膜之積層方向上,於將遠離稜鏡本體之側設為外側時,密接膜具有作為密接膜之最外層且積層於第2層部分上之最外層部分,且最外層部分係Au層。Preferably, in the lamination direction of the adhesive film, when the side far from the main body of the adhesive film is set to the outside, the adhesive film has the outermost layer as the outermost layer of the adhesive film and is laminated on the second layer, and the outermost layer Part is Au layer.
於密接膜之積層方向上,於將遠離稜鏡本體之側設為外側時,密接膜之最外層之算術平均粗糙度Ra較佳為0.20 μm以下。In the layering direction of the adhesive film, when the side away from the main body of the adhesive film is set to the outside, the arithmetic average roughness Ra of the outermost layer of the adhesive film is preferably 0.20 μm or less.
第1層部分較佳為Cr層或Ti層或Ta膜。The first layer portion is preferably a Cr layer, Ti layer, or Ta film.
密接膜較佳為進而具有積層於第1層部分與第2層部分之間之中間層部分。於該情形時,中間層部分更佳為Ni層、Pt層、Pd層、Ni-Cr混合層或將該等組合而成之合金層。The adhesive film preferably further has an intermediate layer portion laminated between the first layer portion and the second layer portion. In this case, the intermediate layer part is more preferably a Ni layer, a Pt layer, a Pd layer, a Ni-Cr mixed layer, or an alloy layer formed by combining them.
稜鏡本體具有上表面,上表面較佳為與底面對向,且連接於斜面。The main body has an upper surface, and the upper surface preferably faces the bottom surface and is connected to the inclined surface.
較佳為於稜鏡本體之斜面設置有反射膜。又,較佳為於稜鏡本體之斜面及上表面設置有反射膜。Preferably, a reflective film is provided on the inclined surface of the main body. Furthermore, it is preferable to provide a reflective film on the inclined surface and upper surface of the main body.
本發明之光裝置之特徵在於具備:上述稜鏡;光學元件,其將光出射至稜鏡或接收來自稜鏡之光;及封裝體,其收容稜鏡及光學元件;且稜鏡藉由密接膜接合於封裝體。The optical device of the present invention is characterized by comprising: the above-mentioned beam; an optical element which emits light to the beam or receives light from the beam; and a package body which houses the beam and the optical element; The film is bonded to the package body.
本發明之稜鏡之製造方法之特徵在於,其係具備於具有底面及連接於底面之斜面之稜鏡本體之底面設置密接膜的步驟者,且設置密接膜之步驟包含:於底面形成包含金屬材料之第1層部分之步驟;及直接或間接地將包含金屬材料之第2層部分積層於第1層部分上之步驟;且第1層部分與第2層部分包含互不相同之成分之金屬材料,第2層部分包含Au層及Sn層中之至少一層。The manufacturing method of the 稜鏡 of the present invention is characterized in that it is provided with a step of arranging an adhesive film on the bottom surface of the 稜鏡 body having a bottom surface and an inclined surface connected to the bottom surface, and the step of arranging the adhesion film includes: The step of the first layer part of the material; and the step of directly or indirectly laminating the second layer part containing the metal material on the first layer part; and the first layer part and the second layer part contain mutually different components The metal material, the second layer part includes at least one of an Au layer and a Sn layer.
本發明之封裝裝置之製造方法之特徵在於具備:準備上述稜鏡之步驟;準備具有與稜鏡之接著面之封裝體之步驟;以密接膜抵接於封裝體之接著面之方式,使稜鏡與封裝體抵接之步驟;及對密接膜進行加熱,使稜鏡與封裝體接合之步驟。The manufacturing method of the packaging device of the present invention is characterized by the step of preparing the above-mentioned ridge; the step of preparing the package body with the bonding surface to the ridge; and the bonding film abuts on the bonding surface of the package body to make the edge The step of abutting the mirror with the package body; and the step of heating the adhesive film to bond the stalk and the package body.
較佳為,於封裝體之接著面形成有Au膜,且以密接膜全體不會熔融之溫度進行加熱,使稜鏡與封裝體接合。 [發明之效果]Preferably, an Au film is formed on the bonding surface of the package, and the adhesive film is heated at a temperature at which the entire adhesive film does not melt to bond the scallop to the package. [Effects of Invention]
根據本發明之稜鏡、光裝置、稜鏡之製造方法及封裝裝置之製造方法,可有效地提高稜鏡之位置精度。According to the invention, the optical device, the manufacturing method of the optical device, and the manufacturing method of the packaging device can effectively improve the position accuracy of the optical device.
以下,對較佳之實施形態進行說明。但,以下之實施形態係單純之例示,本發明不受以下實施形態限定。又,各圖式中,存在實質上具有相同功能之構件以相同符號來參照之情形。Hereinafter, preferred embodiments will be described. However, the following embodiments are merely examples, and the present invention is not limited to the following embodiments. In addition, in each drawing, there are cases in which members having substantially the same function are referred to with the same symbols.
(稜鏡)
(第1實施形態)
圖1係本發明之第1實施形態之稜鏡之剖視圖。如圖1所示,稜鏡1具備稜鏡本體2、密接膜3、及反射膜4。稜鏡本體2具有大致梯形之剖面形狀。稜鏡本體2具有底面2a、連接於底面2a之斜面2b、及與底面2a對向且連接於斜面2b之上表面2c。再者,稜鏡本體2之剖面形狀不限定於大致梯形,亦可為大致三角形等。本實施形態中,稜鏡本體2包含適當之玻璃材料。(稜鏡)
(First Embodiment)
Figure 1 is a cross-sectional view of the first embodiment of the present invention. As shown in FIG. 1, the
於稜鏡本體2之底面2a設置有密接膜3。於稜鏡本體2之斜面2b設置有反射膜4。稜鏡1藉由密接膜3接合於光裝置或封裝裝置中之安裝基板或封裝體等。An
圖2係表示第1實施形態之稜鏡之密接膜附近之放大剖視圖。如圖2所示,密接膜3係複數個金屬層之積層體。具體而言,密接膜3具有位於最靠近稜鏡本體2側之第1層部分5、與積層於第1層部分5上之第2層部分6。本實施形態中,第2層部分6直接地積層於第1層部分5上。再者,第2層部分6亦可介隔其他層而間接地積層於第1層部分5上。Fig. 2 is an enlarged cross-sectional view showing the vicinity of the adhesive film of 稜鏡 in the first embodiment. As shown in FIG. 2, the
第1層部分5係Cr層。當然,第1層部分5只要於密接膜3之各層中與稜鏡本體2之密接性相對性較高即可,不限定於Cr層。例如,第1層部分5亦可為Ti層或者Ta層。The first layer is a 5-series Cr layer. Of course, the
再者,本發明中,於各金屬層容許少量雜質或添加物。具體而言,Cr層係包含95重量%以上Cr之金屬層。又,Ti層係包含95重量%以上Ti之金屬層。又,Ta層係包含95重量%以上Ta之金屬層。Cr、Ti、Ta作為與玻璃之密接層發揮功能,若Cr、Ti、Ta之含量係上述範圍,則不會損害本發明之效果。Furthermore, in the present invention, a small amount of impurities or additives are allowed in each metal layer. Specifically, the Cr layer is a metal layer containing 95% by weight or more of Cr. In addition, the Ti layer is a metal layer containing 95% by weight or more of Ti. In addition, the Ta layer is a metal layer containing 95% by weight or more of Ta. Cr, Ti, and Ta function as an adhesive layer with glass, and if the content of Cr, Ti, and Ta is within the above range, the effect of the present invention will not be impaired.
本實施形態中,第2層部分6係依序積層有第1層6a、第2層6b、第3層6c、第4層6d及第5層6e而成之積層體。此處,於密接膜3之積層方向上,將稜鏡本體2側設為內側,將遠離稜鏡本體2之側設為外側。第2層部分6中,第5層6e係最外層。In this embodiment, the
第1層6a係Au層,第2層6b係Sn層,第3層6c係Au層,第4層6d係Sn層,作為最外層之第5層6e係Au層。第2層部分6中,Au層及Sn層交替地積層。再者,第2層部分6包含Au層及Sn層中之至少一層即可,層數不限定於上述。The
再者,本發明中,Au層係包含95重量%以上Au之金屬層。又,Sn層係包含95重量%以上Sn之金屬層。根據Au或Sn之精製程度,會引起雜質混入至金屬層。作為雜質,例如以Fe、Cr、Ni等為代表,但若Au及Sn各者之含量係上述範圍,則不會損害本發明之效果。Furthermore, in the present invention, the Au layer contains a metal layer of 95% by weight or more Au. In addition, the Sn layer is a metal layer containing 95% by weight or more of Sn. Depending on the degree of refinement of Au or Sn, impurities may be mixed into the metal layer. The impurities are represented by Fe, Cr, Ni, etc., but if the content of each of Au and Sn is in the above range, the effect of the present invention will not be impaired.
反射膜4例如包含高折射率膜及低折射率膜交替地積層而成之介電體多層膜。作為高折射率膜之材料,例如可列舉TiO2
、Ta2
O5
、ZrO2
或HfO2
。作為低折射率膜之材料,例如可列舉SiO2
或MgF2
。又,亦可使用金屬膜作為反射膜4。反射膜4可設置於稜鏡本體2之斜面2b之至少一部分,例如,亦可設置於斜面2b之整個面。藉由於斜面2b設置有反射膜4,從而可使自光源出射之光較佳地反射。再者,稜鏡1亦並非必須具有反射膜4。The
密接膜3及反射膜4例如可藉由利用濺鍍法或真空蒸鍍法等積層各層而形成。The
本實施形態之特徵在於,設置於稜鏡本體2之底面2a之密接膜3具有第1層部分5、與包含Au層及Sn層中之至少一層之第2層部分6。藉此,可有效地提高光裝置中之稜鏡1之位置精度。以下,對於其詳情進行說明。The feature of this embodiment is that the
本實施形態之稜鏡1可於不伴隨密接膜3全體之熔融流動之情況下接合於封裝體等。具體而言,如圖9所示,首先,將稜鏡1載置於封裝體等。具體而言,將稜鏡1載置於封裝體等中之使稜鏡1接著之接著面。此時,於載置稜鏡1之部分(本實施形態中係封裝體之內表面)較佳為設置有Au膜等金屬膜作為用以輔助與密接膜3之接合之輔助層。其次,於密接膜3全體不會發生熔融之溫度對稜鏡1之密接膜3進行加熱。加熱之溫度無特別限定,例如,只要於300℃以上、350℃以下進行加熱即可。藉由密接膜3之加熱,於Au層及Sn層中使金屬相互擴散而使密接膜3合金化。此時,作為封裝體內表面之金屬膜之Au膜與密接膜3之最外層之Au層相互擴散而接著,構成密接膜3之Au層及Sn層亦相互擴散而合金化。藉此,使密接膜3與封裝體等之金屬膜一體化,將稜鏡1接合於封裝體等。如此一來,例如可較佳地製造封裝裝置等。或者,可將光裝置中所使用之稜鏡1搭載於封裝體等。The
如此,由於不會伴隨密接膜3全體之熔融,故於稜鏡1之接合之前後,密接膜3之厚度不易變化,從而不易產生稜鏡本體2之高度方向之位置偏移。同樣地,由於不會伴隨密接膜3全體之熔融,故於稜鏡1之接合之前後,亦不易產生稜鏡本體2之水平方向之位置偏移。因此,可有效地提高稜鏡1之位置精度。又,於封裝體之組裝步驟中,由於可省略先前之焊料之塗佈步驟,即僅將具有密接膜3之稜鏡1載置於封裝體等即可,故可提高作業性或成本效率。In this way, since the melting of the entire
進而,與包含樹脂之接著劑不同,密接膜3包含金屬。因此,不易產生因水分或氧氣而造成之劣化或因光而造成之劣化,可提高可靠性。除此以外,由於於稜鏡1與封裝體等之接合後不會產生氣體,故於反射膜4或後述之光學元件74不易附著雜質,從而不易產生反射率或透過率之劣化。Furthermore, unlike the adhesive agent containing resin, the
再者,上述中,例示有以將稜鏡1載置於封裝體之狀態進行加熱而接合之情形,若為稜鏡1之密接膜3與封裝體之接著面抵接之狀態,則進行接合時之封裝體及稜鏡1之形狀或狀態不限於上述。例如,可為於稜鏡1上載置封裝體之態樣,亦可為將抵接狀態之稜鏡1與封裝體以夾具裝置等夾持之狀態。Furthermore, in the above, there is an exemplified case of heating and bonding in a state where the
密接膜3中,Au層及Sn層較佳為交替地積層。藉此,於進行安裝時,可於Au層及Sn層中更確實地使金屬相互擴散,從而可更確實地使Au層及Sn層合金化。因此,於將稜鏡1安裝於封裝體等時,可更確實地提高密接膜3之接合力。In the
密接膜3全體厚度較佳為1 μm以上,更佳為3 μm以上。藉此,可更充分地提高接合力。密接膜3全體厚度較佳為10 μm以下,更佳為5 μm以下。於該情形時,可使安裝時金屬相互擴散之各層變薄。藉此,可縮短於密接膜3之各層中用以使金屬以不會引起剝離之程度相互擴散所需之時間,從而可縮短密接膜3之合金化之時間。因此,可更提高生產性。又,由於藉由所使用之密接膜3較薄,稜鏡本體2之高度方向之位置偏移變小,因此可更進一步有效地提高稜鏡1之位置精度。The thickness of the entire
密接膜3之第2層部分6中之Au層及Sn層之合計層數較佳為3層以上,更佳為15層以上。藉此,可更進一步使第2層部分6中之各層之厚度變薄。因此,於進行安裝時,可更進一步縮短密接膜3之合金化之時間,可更進一步提高生產性。The total number of layers of the Au layer and the Sn layer in the
第2層部分6中之Au層及Sn層之合計層數較佳為99層以下。若考慮到生產性,則更佳為39層以下,進而佳為35層以下。於第2層部分6之層數過多之情形時,各層變得過薄,故有難以形成各層之虞。The total number of Au layers and Sn layers in the
第2層部分6亦可具有積層於Au層與Sn層之間,且包含Au及Sn之合金之Au-Sn層。於該情形時,於進行安裝時,可更進一步有效地縮短密接膜3之合金化之時間,可更進一步有效地提高生產性。再者,Au-Sn層可使用真空蒸鍍法或濺鍍法,藉由2源蒸鍍或2源濺鍍而於短時間形成。The
再者,Au-Sn層可藉由於形成密接膜3時使相鄰之Au層及Sn層之一部分合金化而形成。例如,可於濺鍍法或真空蒸鍍法等適當條件下,藉由將Au層與Sn層積層時之能量使Au層及Sn層之一部分合金化而形成Au-Sn層。Furthermore, the Au-Sn layer can be formed by alloying a part of the adjacent Au layer and Sn layer when the
第2層部分6中之最外層較佳為Au層。藉此,於安裝時,與封裝體等相接之最外層不易發生氧化,可更確實地提高接合力。The outermost layer in the
此處,將密接膜3中之Au之重量之合計設為MA
,將Sn之重量之合計設為MS
,將Au之重量相對於Au及Sn之重量之合計之比率設為MA
/(MA
+MS
)。此時,比率MA
/(MA
+MS
)較佳為大於0.78、小於0.82,特佳為0.8。於該情形時,可將Au及Sn之熔點(共晶溫度)設為280℃左右,可於低溫下使密接膜3合金化。因此,可於低溫下將稜鏡1接合於封裝體等。Here, let the total weight of Au in the
此處,如上所述,較佳為於安裝稜鏡1之封裝體等形成有Au膜等金屬膜。於將稜鏡1接合於封裝體等之形成有Au膜之部分時,產生自該Au膜向密接膜3之Au之夾裹。因此,於合金化後之密接膜3之Au之重量之比率MA
/(MA
+MS
)較合金化前變大。因此,於此種情形時,密接膜3中之Au之重量之比率MA
/(MA
+MS
)較佳為0.60以上、0.78以下,更佳為0.68以上、0.75以下。藉由將合金化前之密接膜3之比率MA
/(MA
+MS
)設為上述範圍內,可使Au膜及密接膜3之合金化後之密接膜3之比率MA
/(MA
+MS
)為大於0.78、小於0.82之範圍內。藉此,可將Au及Sn之熔點(共晶溫度)設為280℃左右,可於低溫下使密接膜3合金化。因此,可更確實地於低溫下將稜鏡1接合於封裝體等。Here, as described above, it is preferable that a metal film such as an Au film is formed on the package or the like on which the
如本實施形態般,稜鏡本體2較佳為具有與底面2a對向且連接於斜面2b之上表面2c。於該情形時,由於使稜鏡1移動時易夾持稜鏡,故可容易地安裝稜鏡1。再者,稜鏡本體2並非必須具有上表面2c,亦可為剖面形狀係大致三角形等。As in the present embodiment, the
(第2實施形態)
圖3係表示本發明之第2實施形態之稜鏡之密接膜附近之放大剖視圖。如圖3所示,本實施形態之稜鏡11於在密接膜13之第2層部分16中越位於外側之層則越薄之點,與第1實施形態不同。具體而言,於將第1層16a之厚度設為Ta
、將第2層16b之厚度設為Tb
、將第3層16c之厚度設為Tc
、將第4層16d之厚度設為Td
、將第5層16e之厚度設為Te
時,滿足Ta
>Tb
>Tc
>Td
>Te
。除上述以外之點,本實施形態之稜鏡11具有與第1實施形態之稜鏡1同樣之構成。(Second Embodiment) Fig. 3 is an enlarged cross-sectional view showing the vicinity of the adhesive film of the scallop in the second embodiment of the present invention. As shown in FIG. 3, the
即便於本實施形態中,亦可與第1實施形態同樣地,於不會伴隨密接膜13之熔融之情況下將稜鏡11接合於封裝體等。因此,可有效地提高稜鏡11之位置精度。Even in this embodiment, as in the first embodiment, the
此外,由於第5層16e係最外層,故與第5層16e相鄰之層僅為位於內側之第4層16d。因此,於使密接膜13合金化時,於第3層16c或第4層16d中產生經由外側及內側之兩面之相互擴散,但於第5層16e中產生僅經由內側之面之相互擴散。此處,本實施形態中,第5層16e係於第2層部分16中最薄之層。因此,由於可有效地縮短於第5層16e中進行合金化所需之相互擴散之時間,故可更確實地使第5層16e合金化,且可縮短合金化之時間。因此,可更確實地使密接膜13合金化,可更確實地提高接合力,且可提高生產性。In addition, since the
除此以外,於密接膜13之第2層部分16中越位於外側之層則越薄。藉此,即便使第5層16e變薄,亦可更確實地使除第5層16e以外之層合金化。因此,可更進一步確實地使密接膜13合金化,可更進一步確實地提高接合力。In addition, in the
再者,於第2層部分16中,亦可為第5層16e為最薄之層,且至少2層為相同厚度。第2層部分16之各層之厚度之關係亦可為Ta
≧Tb
≧Tc
≧Td
>Te
。Furthermore, in the
(第3實施形態)
圖4係表示本發明之第3實施形態之稜鏡之密接膜附近之放大剖視圖。密接膜之各層之厚度可自第1實施形態中之厚度如下述般變更。例如,本實施形態之稜鏡21亦可設為下述構成:於密接膜23之第2層部分26中,複數個Au層之厚度互為相同,且複數個Sn層之厚度為越位於外側則越厚。具體而言,於將第1層26a之厚度設為Ta
、將第2層26b之厚度設為Tb
、將第3層26c之厚度設為Tc
、將第4層26d之厚度設為Td
、將第5層26e之厚度設為Te
時,Au層之厚度為Ta
=Tc
=Te
,Sn層之厚度為Tb
<Td
。上述以外之點中,本實施形態之稜鏡21具有與第1實施形態之稜鏡1同樣之構成。(Third Embodiment) Fig. 4 is an enlarged cross-sectional view showing the vicinity of the adhesive film of the scallop in the third embodiment of the present invention. The thickness of each layer of the adhesive film can be changed from the thickness in the first embodiment as follows. For example, the 稜鏡 21 of this embodiment can also be configured as follows: in the
即便於本實施形態中,亦可與第1實施形態同樣地,於不會伴隨密接膜23全體之熔融流動之情況下將稜鏡21接合於封裝體等。又,於密接膜23已合金化時,相較於內側,可提高外側之Sn之重量比,可更進一步有效地提高稜鏡21之位置精度。Even in this embodiment, as in the first embodiment, the
(第4實施形態)
圖5係表示本發明之第4實施形態之稜鏡之密接膜附近之放大剖視圖。密接膜之各層之厚度可自第1實施形態中之厚度如下述般變更。例如,本實施形態之稜鏡31亦可設為下述構成:於密接膜33之第2層部分36中,複數個Au層之厚度係越位於外側則越薄,且複數個Sn層之厚度互為相同。具體而言,於將第1層36a之厚度設為Ta
、將第2層36b之厚度設為Tb
、將第3層36c之厚度設為Tc
、將第4層36d之厚度設為Td
、將第5層36e之厚度設為Te
時,Au層之厚度為Ta
>Tc
>Te
,Sn層之厚度為Tb
=Td
。除上述以外之點,本實施形態之稜鏡31具有與第1實施形態之稜鏡1同樣之構成。(Fourth Embodiment) Fig. 5 is an enlarged cross-sectional view showing the vicinity of the adhesive film of the scallop in the fourth embodiment of the present invention. The thickness of each layer of the adhesive film can be changed from the thickness in the first embodiment as follows. For example, the 稜鏡 31 of the present embodiment can also be configured as follows: In the
即便於本實施形態中,亦可與第1實施形態同樣地,於不會伴隨密接膜33全體之熔融流動之情況下將稜鏡31接合於封裝體等。又,於密接膜33已合金化時,相較於內側,可提高外側之Sn之重量比,可更進一步有效地提高稜鏡31之位置精度。Even in this embodiment, as in the first embodiment, the
(第5實施形態)
圖6係表示本發明之第5實施形態之稜鏡之密接膜附近之放大剖視圖。如圖6所示,本實施形態之稜鏡41於密接膜43具有積層於第1層部分5與第2層部分6之間之中間層部分47之點,與第1實施形態不同。除上述以外之點,本實施形態之稜鏡41具有與第1實施形態之稜鏡1同樣之構成。(Fifth Embodiment)
Fig. 6 is an enlarged cross-sectional view showing the vicinity of the adhesive film of the scallop in the fifth embodiment of the present invention. As shown in FIG. 6, the
本實施形態中,第2層部分6介隔中間層部分47間接地積層於第1層部分5上。藉由密接膜43具有中間層部分47,第2層部分6之金屬不易擴散於第1層部分5。因此,密接膜43不易自稜鏡本體2剝離。In this embodiment, the
中間層部分47較佳為Ni層、Pt層、Pd層、Ni-Cr混合層或使該等組合而成之合金層。藉此,第2層部分6之金屬更進一步不易擴散於第1層部分5,密接膜43更進一步不易自稜鏡本體2剝離。The
再者,本發明中,Ni層係包含90重量%以上Ni之金屬層。又,Pt層係包含90重量%以上Pt之金屬層。又,Pd層係包含90重量%以上Pd之金屬層。該等作為障壁層發揮功能,認為藉由包含90重量%以上Ni、Pt、Pd或者其合金層,可發揮作為障壁層之功能。Furthermore, in the present invention, the Ni layer is a metal layer containing 90% by weight or more Ni. In addition, the Pt layer is a metal layer containing 90% by weight or more of Pt. In addition, the Pd layer is a metal layer containing 90% by weight or more of Pd. These functions as a barrier layer, and it is considered that by containing 90% by weight or more of Ni, Pt, Pd, or an alloy layer thereof, it can function as a barrier layer.
除此以外,與第1實施形態同樣地,可於不會伴隨密接膜43全體之熔融流動之情況下將稜鏡41接合於封裝體等。因此,可有效地提高稜鏡41之位置精度。Except for this, as in the first embodiment, it is possible to bond the
(第6實施形態)
圖7係本發明之第6實施形態之稜鏡之剖視圖。如圖7所示,本實施形態之稜鏡51於反射膜4設置於稜鏡本體2之斜面2b及上表面2c之點,與第1實施形態不同。具體而言,反射膜4自斜面2b至上表面2c連續地設置。除上述以外之點,本實施形態之稜鏡51具有與第1實施形態之稜鏡1同樣之構成。(The sixth embodiment)
Fig. 7 is a cross-sectional view of a scorpion in the sixth embodiment of the present invention. As shown in FIG. 7, the
即便於本實施形態中,由於具有與第1實施形態同樣之密接膜3,故亦可有效地提高稜鏡51之位置精度。Even in this embodiment, since it has the same
較理想為一面藉由攝影機對稜鏡51之位置進行視認,一面實施稜鏡51之安裝。藉此,可提高稜鏡51之位置精度。進而,本實施形態中,反射膜4設置於稜鏡本體2之上表面2c。藉此,藉由反射膜4將光向攝影機側反射。因此,可提高稜鏡51之亮度,可容易地藉由攝影機對稜鏡51進行視認。因此,可更確實地進行稜鏡51之位置確認,可更確實地提高稜鏡51之位置精度。It is more ideal to visually recognize the position of the
本實施形態中,反射膜4設置於稜鏡本體2之上表面2c之整個面。當然,反射膜4亦可設置於上表面2c之一部分。圖8所示之第6實施形態之變化例之稜鏡61中,反射膜4自稜鏡本體2之斜面到達至上表面2c之一部分。即便於該情形時,亦可於安裝時,更確實地進行位置確認,可更確實地提高稜鏡61之位置精度。In this embodiment, the
圖7所示之稜鏡51中,斜面2b及上表面2c之反射膜4一體地設置。再者,設置於斜面2b之反射膜4與設置於上表面2c之反射膜4亦可為不同體。In the
(光裝置)
(第7實施形態)
圖9係本發明之第7實施形態之光裝置之剖視圖。如圖9所示,光裝置70具備第1實施形態之稜鏡1、光學元件74、及收容稜鏡1及光學元件74之封裝體75。(Light device)
(The seventh embodiment)
Fig. 9 is a cross-sectional view of an optical device according to a seventh embodiment of the present invention. As shown in FIG. 9, the
本實施形態中,光學元件74係將光出射至稜鏡1之光源。光源無特別限定,可使用例如LD或LED(Light Emitting Diode,發光二極體)等。再者,光學元件74亦可為接收來自稜鏡1之光之受光元件。In this embodiment, the
封裝體75係具有底部76及配置於底部76上之側壁部77之容器狀之構件。封裝體75例如包含陶瓷材料,具體而言包含氧化鋁或氮化鋁等。底部76具有安裝面76a。於底部76之安裝面76a上配置有光學元件74及稜鏡1。側壁部77具有內表面77a及外表面。於底部76之安裝面76a及側壁部77之內表面77a設置有金屬膜78。具體的而言,本實施形態中,金屬膜78係Au膜。再者,金屬膜78不限定於Au膜。The
稜鏡1藉由密接膜3接合於封裝體75之安裝面76a。光學元件74無特別限定,例如亦可藉由焊料等接合於安裝面76a。The 稜鏡 1 is bonded to the mounting
封裝體75亦並非必須具有金屬膜78。當然,封裝體75較佳為如本實施形態般具有金屬膜78。藉由使稜鏡1之密接膜3與金屬膜78合金化,可更確實且有效地提高稜鏡1與封裝體75間之接合力。此種構成尤其對於稜鏡1與封裝體75之熱膨脹率差相對較大之情形有效。The
金屬膜78較佳為Au膜。藉此,金屬膜78不易發生氧化。因此,於製造光裝置70時,可更確實地提高稜鏡1與封裝體75間之接合力。The
本實施形態中,於底部76之安裝面76a之整個面及側壁部77之內表面77a設置有金屬膜78。當然,金屬膜78只要至少設置於配置稜鏡1之部分即可。In this embodiment, a
於封裝體75之側壁部77上,以將光學元件74及稜鏡1密封之方式設置有蓋體79。蓋體79無特別限定,本實施形態中係玻璃蓋。On the
蓋體79與封裝體75之接合方法無特別限定,本實施形態中,例如藉由SnNi接合進行接合。於該情形時,由於於接合後不易產生氣體,故於稜鏡1之反射膜4不易附著雜質,不易產生反射率之劣化。上述接合方法係一例,亦可藉由SnAg接合、SnAgCu接合進行接合。The method of joining the
如圖9所示,自光學元件74出射之光A於稜鏡1反射,並通過蓋體79向光裝置70外出射。As shown in FIG. 9, the light A emitted from the
由於光裝置70具有第1實施形態之稜鏡1,故可有效地提高光裝置70中之稜鏡1之位置精度。Since the
光裝置70可使用於多晶片。多晶片例如具備安裝基板、與配置於安裝基板上之複數個光裝置70。由於多晶片之光裝置具有第1實施形態之稜鏡1,故即便於多晶片中,亦可有效地提高稜鏡1之位置精度。The
(稜鏡)
(第8實施形態)
圖10係第8實施形態之稜鏡之剖視圖。如圖10所示,本實施形態之稜鏡於密接膜83A之第2層部分86A具有應力緩和層87A之點,與第1實施形態不同。具體而言,應力緩和層87A相當於作為複數個Au層中之一層之第3層。除上述以外之點,本實施形態之稜鏡具有與第1實施形態之稜鏡1同樣之構成。(稜鏡)
(Eighth Embodiment)
Fig. 10 is a cross-sectional view of the eighth embodiment. As shown in FIG. 10, the second embodiment of this embodiment is different from the first embodiment in that the
應力緩和層87A之厚度與作為其他Au層之第1層6a及第5層6e之平均厚度不同。更具體而言,應力緩和層87A之厚度厚於第2層部分86A中之其他Au層之平均厚度。The thickness of the
此處,Au層與Sn層具有相互逆向之應力。於第2層部分之Au層及Sn層中之一者之應力大於另一者之應力之情形時,於將稜鏡接合於封裝體時,對封裝體施加應力。第2層部分中之Au層及Sn層之層越多,則應力越大。Here, the Au layer and the Sn layer have stresses in opposite directions. When the stress of one of the Au layer and the Sn layer of the second layer portion is greater than the stress of the other, stress is applied to the package when bonding the stalk to the package. The more Au and Sn layers in the second layer portion, the greater the stress.
與此相對,本實施形態中,第2層部分86A具有應力緩和層87A。藉此,可使複數個Au層之應力之合計與複數個Sn層之應力之合計之大小關係接近於相等關係。因此,可緩和於安裝稜鏡時施加於封裝體之應力。因此,稜鏡不易自封裝體剝離。In contrast, in this embodiment, the
藉由密接膜83A具有應力緩和層87A,可將Au層之應力之合計調整至較大,故本實施形態適合於Sn層之應力之合計較大之情形。應力緩和層87A之厚度較佳為其他Au層之平均厚度之1/2以上、5倍以下。藉此,於將稜鏡安裝於封裝體等時,可有效地緩和施加於封裝體等之應力,可有效地抑制稜鏡自封裝體等剝離。Since the
例如,亦可使除應力緩和層87A以外之複數個Au層之厚度均勻,且使複數個Sn層之厚度均勻。於該情形時,於形成密接膜93時,只要僅使應力緩和層87A之厚度與其他Au層之厚度不同即可。因此,可簡化製造步驟。因此,可提高生產性,且稜鏡不易自封裝體等剝離。當然,除應力緩和層87A以外之複數個Au層之厚度及複數個Sn層之厚度亦可不均勻。For example, the thickness of the Au layers other than the
進而,即便於本實施形態中,亦可與第1實施形態同樣地,於不會伴隨密接膜83A之熔融之情況下將稜鏡接合於封裝體等。因此,可有效地提高稜鏡之位置精度。Furthermore, even in this embodiment, as in the first embodiment, it is possible to bond the scallop to the package or the like without the melting of the
以下,表示有僅應力緩和層之構成與本實施形態不同之第9~第11實施形態。即便於第9~第11實施形態中,亦可與本實施形態同樣地,有效地提高稜鏡之位置精度,且稜鏡不易自封裝體等剝離。Hereinafter, there are shown the ninth to eleventh embodiments that differ only in the structure of the stress relaxation layer from this embodiment. Even in the ninth to eleventh embodiments, as in the present embodiment, the position accuracy of the scallops can be effectively improved, and the scallops are not easily peeled from the package or the like.
(第9實施形態)
圖11係第9實施形態之稜鏡之剖視圖。如圖11所示,即便於本實施形態中,密接膜83B之第2層部分86B中之應力緩和層87B,亦相當於作為複數個Au層中之一層之第3層。應力緩和層87B之厚度薄於第2層部分86A中之除應力緩和層87B以外之Au層之平均厚度。(Ninth Embodiment)
Figure 11 is a cross-sectional view of the ninth embodiment. As shown in FIG. 11, even in this embodiment, the
藉由密接膜83B具有應力緩和層87B,可將Au層之應力之合計向較小之方調整,故本實施形態適合於Sn層之應力之合計較小之情形。應力緩和層87B之厚度較佳為其他Au層之平均厚度之1/5以上、1/2以下,更佳為1/5以上、1/4以下。藉此,於將稜鏡安裝於封裝體等時,可有效地緩和施加於封裝體等之應力,可有效地抑制稜鏡自封裝體等剝離。Since the
(第10實施形態)
圖12係第10實施形態之稜鏡之剖視圖。如圖12所示,本實施形態之密接膜83C之第2層部分86C中之應力緩和層87C,相當於作為複數個Sn層中之一層之第4層。應力緩和層87C之厚度厚於第2層部分86C中之除應力緩和層87C以外之Sn層之平均厚度。(Tenth Embodiment)
Fig. 12 is a cross-sectional view of the tenth embodiment of the 稜鏡. As shown in FIG. 12, the
藉由密接膜83C具有應力緩和層87C,可將Sn層之應力之合計向較大之方調整,故本實施形態適合於Au層之應力之合計較大之情形。應力緩和層87C之厚度較佳為其他Sn層之平均厚度之1/2以上、5倍以下。藉此,於將稜鏡安裝於封裝體等時,可有效地緩和施加於封裝體等之應力,可有效地抑制稜鏡自封裝體等剝離。Since the
(第11實施形態)
圖13係第11實施形態之稜鏡之剖視圖。如圖13所示,即便於本實施形態,密接膜83D之第2層部分86D中之應力緩和層87D,亦相當於作為複數個Sn層中之一層之第4層。應力緩和層87D之厚度薄於第2層部分86D中之除應力緩和層87D以外之Sn層之平均厚度。(Eleventh embodiment)
Figure 13 is a cross-sectional view of the eleventh embodiment. As shown in FIG. 13, even in this embodiment, the
藉由密接膜83D具有應力緩和層87D,可將Sn層之應力之合計向較小之方調整,故本實施形態適合於Au層之應力之合計較小之情形。應力緩和層87D之厚度較佳為其他Sn層之平均厚度之1/5以上、1/2以下,更佳為1/5以上、1/3以下。藉此,於將稜鏡安裝於封裝體等時,可有效地緩和施加於封裝體等之應力,可有效地抑制稜鏡自封裝體等剝離。Since the
上述各實施形態中,表示密接膜之第2層部分具有Au層及Sn層中之至少一層之例。再者,密接膜之第2層部分中,Au層及Sn層亦可合金化。以下表示該例。In each of the foregoing embodiments, the second layer portion of the adhesive film has at least one of an Au layer and a Sn layer. Furthermore, in the second layer portion of the adhesive film, the Au layer and the Sn layer may also be alloyed. This example is shown below.
(第12實施形態)
圖14係第12實施形態之稜鏡之剖視圖。如圖14所示,本實施形態於第2層部分96係包含Au及Sn之合金之Au-Sn層之點及密接膜93具有最外層部分98之點,與第1實施形態不同。最外層部分98積層於第2層部分96上。最外層部分98係Au層。除上述以外之點,本實施形態之稜鏡91具有與第1實施形態之稜鏡1同樣之構成。(12th embodiment)
Figure 14 is a cross-sectional view of the twelfth embodiment. As shown in FIG. 14, this embodiment differs from the first embodiment in that the
於形成密接膜93之第2層部分96時,例如只要將Au層及Sn層交替地積層,其次對積層之Au層及Sn層進行加熱即可。藉此,藉由使Au層及Sn層合金化,可形成第2層部分96。When forming the
本實施形態中,最外層部分98係密接膜93之最外層。最外層部分98例如可藉由濺鍍法或真空蒸鍍法等形成。再者,密接膜93亦可不具有最外層部分98。於該情形時,與其他第1實施形態等同樣地,第2層部分之最外層係密接膜之最外層。再者,具體而言,如本實施形態般,於第2層部分96係Au-Sn層,且不具有最外層部分98之情形時,Au-Sn層係最外層。In this embodiment, the
稜鏡91與其他實施形態之稜鏡同樣地被安裝於封裝體等。即便於本實施形態中,亦可於不會伴隨密接膜93全體之熔融流動之情況下將稜鏡91接合於封裝體等。因此,可有效地提高稜鏡91之位置精度。The
密接膜93之第2層部分96之厚度較佳為2.5 μm以上、5.9 μm以下。藉此,於將稜鏡91安裝於封裝體等時,可充分地提高密接膜93之接合力。再者,第1層部分之厚度較佳為0.1以上、0.5 μm以下。密接膜之全體厚度較佳為3 μm以上、6 μm以下。The thickness of the
如本實施形態般密接膜93較佳為具有最外層部分98。本實施形態中,於作為Au-Sn層之第2層部分96上積層有作為Au層之最外層部分98。於該情形時,於安裝時與封裝體等相接之部分係最外層部分98。因此,於安裝時,密接膜93不易發生氧化,可更確實地提高密接膜93之接合力。It is preferable that the
即便於本實施形態中,亦可與第5實施形態同樣地於第1層部分5與第2層部分96之間積層有中間層部分。藉此,第2層部分96之金屬不易擴散於第1層部分5。因此,密接膜93不易自稜鏡本體2剝離。Even in this embodiment, as in the fifth embodiment, an intermediate layer portion may be laminated between the
(第13實施形態)
圖15係第13實施形態之稜鏡之剖視圖。如圖15所示,本實施形態於在稜鏡本體2之底面2a與斜面2b之稜線設置有保護膜105之點,與第1實施形態不同。除上述以外之點,本實施形態之稜鏡具有與第1實施形態之稜鏡1同樣之構成。(13th embodiment)
Fig. 15 is a cross-sectional view of the thirteenth embodiment. As shown in FIG. 15, this embodiment is different from the first embodiment at the point where a
保護膜105與反射膜4一體地設置。保護膜105連接於密接膜3。再者,保護膜105並非必須連接於密接膜3。保護膜105例如可藉由濺鍍法或真空蒸鍍法等形成。如本實施形態般,於保護膜105與反射膜4一體之情形時,亦可將保護膜105與反射膜4同時形成。The
當然,保護膜105亦可作為與反射膜4之不同體設置。或者,保護膜105亦可與密接膜3一體地設置。於該情形時,保護膜105可連接於反射膜4,或亦可不連接於反射膜4。於保護膜105與密接膜3一體之情形時,保護膜105具有與密接膜3同樣之複數層中之至少一層。Of course, the
藉由稜鏡具有保護膜105,不易於稜鏡本體2產生缺陷。保護膜105較佳為連接於反射膜4及密接膜3之兩者。藉此,更進一步不易於稜鏡本體2產生缺陷。With the
即便於本實施形態中,亦可與第1實施形態同樣地,於不會伴隨密接膜3熔融之情況下將稜鏡接合於封裝體等。因此,可有效地提高稜鏡之位置精度。Even in this embodiment, as in the first embodiment, the scallop can be bonded to the package or the like without the
(接合力之評價)
圖1所示之第1實施形態之稜鏡1中,使作為密接膜3之最外層之第2層部分6之最外層之算術平均粗糙度Ra不同,確認與封裝體之接合性。再者,密接膜3之最外層設為Au層。具體而言,於將最外層之算術平均粗糙度Ra設為Ra時,滿足Ra≦0.05、0.05<Ra≦0.09、0.09<Ra≦0.15、0.15<Ra≦0.20。再者,本說明書中之算術平均粗糙度Ra基於JIS(Japanese Industrial Standards,日本工業標準) B 0601:2013。(Evaluation of bonding force)
In the first embodiment shown in Fig. 1, the arithmetic average roughness Ra of the outermost layer of the
於接合性之確認中,使用具有經Au鍍覆之部分之氮化鋁基板作為封裝體。藉由加熱至約320℃而將稜鏡1接合於氮化鋁基板之經Au鍍覆之部分。其後,自稜鏡1之側面施加力。具體而言,對稜鏡1施加力直至稜鏡1之密接膜3自氮化鋁基板剝離、或稜鏡本體2自密接膜3剝離、或者不產生剝離而係稜鏡本體2被破壞為止。於使算術平均粗糙度Ra不同之各情形時,分別進行15次接合性之確認。將結果示於表1。In the confirmation of bonding, an aluminum nitride substrate with a portion plated with Au was used as the package. The Au-plated portion of the aluminum nitride substrate was bonded to the aluminum nitride substrate by heating to about 320°C. After that, force is applied from the side of 稜鏡1. Specifically, force is applied to the
表1中,接合性之評價係◎為最高,○為第二高,△為最低。所謂「未剝離」係指密接膜3未自封裝體剝離,包含稜鏡本體2被破壞之情形或稜鏡本體2自密接膜3剝離之情形。所謂「一部分剝離」係指密接膜3之一部分自封裝體剝離。In Table 1, ⊚ is the highest, ◯ is the second highest, and △ is the lowest. The so-called "unpeeled" means that the
[表1]
如表1所示,可知於使密接膜3之最外層之算術平均粗糙度Ra不同之任一情形時,均為「未剝離」或「一部分剝離」,密接膜3未完全自封裝體剝離。進而,可知最外層之算術平均粗糙度Ra之值越小,則「未剝離」之比率越大。As shown in Table 1, it can be seen that in any case where the arithmetic average roughness Ra of the outermost layer of the
密接膜3之最外層之算術平均粗糙度Ra較佳為0.20 μm以下,更佳為0.15 μm以下,進而佳為0.09 μm以下,特佳為0.05 μm以下。藉此,於安裝時,可更進一步有效地提高封裝體等與密接膜93之密接性。因此,可更進一步有效地提高接合力。The arithmetic average roughness Ra of the outermost layer of the
同樣地,圖14所示之第12實施形態中,即便於密接膜93未具有最外層部分98之情形時,亦較佳為作為密接膜93最外層之第2層部分96之算術平均粗糙度Ra為上述範圍內。藉此,可更進一步有效地提高接合力。Similarly, in the twelfth embodiment shown in FIG. 14, even when the
(應力之評價)
對稜鏡密接膜之應力之大小進行評價。如圖16所示,將於兩側面對向之方向上延伸之稜鏡之母材91A貼附於切割片。其次,沿著單點鏈線I-I,對稜鏡之母材91A進行切割而將之單片化。再者,單片化後之稜鏡具有與圖14所示之第12實施形態之稜鏡同樣之構成。於密接膜93之相對於封裝體之應力較大之情形時,由於單片化時應力被解除時之衝擊較大,故稜鏡易剝離。因此,剝離之比率越大,則密接膜93之應力越大。(Evaluation of stress)
Evaluate the stress of the adhesive film. As shown in FIG. 16, the
應力之評價係使密接膜93之第2層部分96之厚度等不同,於條件1~條件4下進行。具體而言,於條件1中,將第2層部分96之厚度設為3 μm,於條件2~4中,將第2層部分96之厚度設為6 μm。進而,於條件3及條件4中,於將稜鏡之母材91A貼附於切割片之前進行加熱處理。具體而言,條件3中,於氮氣氛圍下以200℃進行2小時加熱處理。條件4中,於氮氣氛圍下以200℃進行5小時加熱處理。將應力之大小之評價結果示於表2。The evaluation of the stress was performed under
表2中,於◎之情形時應力最小,○為第二小,△為最大。In Table 2, the stress is the smallest in the case of ◎, ○ is the second smallest, and △ is the largest.
[表2]
如表2所示,於條件1~條件4下,稜鏡91自封裝體之剝離均被抑制為50%以下。進而,若比較第2層部分96之厚度不同之條件1及條件2,則第2層部分96較薄之條件1中,應力更進一步小。如此,可知若第2層部分96越薄,則密接膜93之應力越小。密接膜93之第2層部分96之厚度較佳為6 μm以下,更佳為3 μm以下。藉此,可更進一步減小應力。As shown in Table 2, under
若比較第2層部分96之厚度相同之條件2及條件3,則於將稜鏡之母材91A貼附於切割片之前進行加熱處理之條件3中,應力更進一步小。進而,若比較第2層部分96之厚度相同,且進行上述加熱處理之條件3及條件4,則上述加熱處理之時間較長之條件4中,應力更進一步小。如此,可知上述加熱處理之時間越長,則越可抑制應力。較佳為於將稜鏡貼附於切割片之前進行加熱處理,上述加熱處理較佳為進行2小時至6小時左右。藉此,可更進一步有效地抑制應力。Comparing
1:稜鏡 2:稜鏡本體 2a:底面 2b:斜面 2c:上表面 3:密接膜 4:反射膜 5:第1層部分 6:第2層部分 6a:第1層 6b:第2層 6c:第3層 6d:第4層 6e:第5層 11:稜鏡 13:密接膜 16:第2層部分 16a:第1層 16b:第2層 16c:第3層 16d:第4層 16e:第5層 21:稜鏡 23:密接膜 26:第2層部分 26a:第1層 26b:第2層 26c:第3層 26d:第4層 26e:第5層 31:稜鏡 33:密接膜 36:第2層部分 36a:第1層 36b:第2層 36c:第3層 36d:第4層 36e:第5層 41:稜鏡 43:密接膜 47:中間層部分 51:稜鏡 61:稜鏡 70:光裝置 74:光學元件 75:封裝體 76:底部 76a:安裝面 77:側壁部 77a:內表面 78:金屬膜 79:蓋體 83A:密接膜 83B:密接膜 83C:密接膜 83D:密接膜 86A:第2層部分 86B:第2層部分 86C:第2層部分 86D:第2層部分 87A:應力緩和層 87B:應力緩和層 87C:應力緩和層 87D:應力緩和層 91:稜鏡 91A:稜鏡之母材 93:密接膜 96:第2層部分 98:最外層部分 105:保護膜 1: 稜鏡 2: 稜鏡 body 2a: bottom surface 2b: inclined plane 2c: upper surface 3: Adhesive film 4: reflective film 5: Layer 1 part 6: Layer 2 part 6a: layer 1 6b: Layer 2 6c: layer 3 6d: layer 4 6e: layer 5 11: 鏡 13: Adhesive film 16: Layer 2 part 16a: layer 1 16b: Layer 2 16c: layer 3 16d: layer 4 16e: layer 5 21: 稜鏡 23: Adhesive film 26: Layer 2 part 26a: Level 1 26b: Layer 2 26c: layer 3 26d: layer 4 26e: layer 5 31: 鏡 33: Adhesive film 36: Layer 2 part 36a: Level 1 36b: Layer 2 36c: layer 3 36d: layer 4 36e: layer 5 41: 稜鏡 43: Adhesive film 47: middle layer part 51: Secret 61: Secret 70: Light Device 74: optical components 75: package body 76: bottom 76a: mounting surface 77: side wall 77a: inner surface 78: metal film 79: Lid 83A: Adhesive film 83B: Adhesive film 83C: Adhesive film 83D: Adhesive film 86A: Layer 2 part 86B: Layer 2 part 86C: Layer 2 part 86D: Layer 2 part 87A: Stress relaxation layer 87B: Stress relaxation layer 87C: Stress relaxation layer 87D: Stress relaxation layer 91: Secret 91A: The base material of 稜鏡 93: Adhesive film 96: Layer 2 part 98: The outermost part 105: Protective film
圖1係本發明之第1實施形態之稜鏡之剖視圖。 圖2係表示本發明之第1實施形態之稜鏡之密接膜附近之放大剖視圖。 圖3係表示本發明之第2實施形態之稜鏡之密接膜附近之放大剖視圖。 圖4係表示本發明之第3實施形態之稜鏡之密接膜附近之放大剖視圖。 圖5係表示本發明之第4實施形態之稜鏡之密接膜附近之放大剖視圖。 圖6係表示本發明之第5實施形態之稜鏡之密接膜附近之放大剖視圖。 圖7係本發明之第6實施形態之稜鏡之剖視圖。 圖8係本發明之第6實施形態之變化例之稜鏡之剖視圖。 圖9係本發明之第7實施形態之光裝置之剖視圖。 圖10係本發明之第8實施形態之稜鏡之剖視圖。 圖11係本發明之第9實施形態之稜鏡之剖視圖。 圖12係本發明之第10實施形態之稜鏡之剖視圖。 圖13係本發明之第11實施形態之稜鏡之剖視圖。 圖14係本發明之第12實施形態之稜鏡之剖視圖。 圖15係本發明之第13實施形態之稜鏡之剖視圖。 圖16係使用於應力之評價之稜鏡之母材之剖視圖。Figure 1 is a cross-sectional view of the first embodiment of the present invention. Fig. 2 is an enlarged cross-sectional view showing the vicinity of the adhesive film of 稜頡 in the first embodiment of the present invention. Fig. 3 is an enlarged cross-sectional view showing the vicinity of the adhesive film of the 稜頡 in the second embodiment of the present invention. Fig. 4 is an enlarged cross-sectional view showing the vicinity of the adhesive film of the 稜頡 in the third embodiment of the present invention. Fig. 5 is an enlarged cross-sectional view showing the vicinity of the adhesive film of the scallop in the fourth embodiment of the present invention. Fig. 6 is an enlarged cross-sectional view showing the vicinity of the adhesive film of the scallop in the fifth embodiment of the present invention. Fig. 7 is a cross-sectional view of a scorpion in the sixth embodiment of the present invention. Fig. 8 is a cross-sectional view of a modified example of the sixth embodiment of the present invention. Fig. 9 is a cross-sectional view of an optical device according to a seventh embodiment of the present invention. Fig. 10 is a cross-sectional view of an eighth embodiment of the present invention. Figure 11 is a cross-sectional view of the ninth embodiment of the present invention. Figure 12 is a cross-sectional view of the tenth embodiment of the present invention. Figure 13 is a cross-sectional view of the eleventh embodiment of the present invention. Figure 14 is a cross-sectional view of the twelfth embodiment of the present invention. Fig. 15 is a cross-sectional view of the thirteenth embodiment of the present invention. Figure 16 is a cross-sectional view of the base material used for stress evaluation.
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