JP7108179B2 - Manufacturing method of cap, light emitting device and manufacturing method thereof - Google Patents

Description

TECHNICAL FIELD The present invention relates to a method for manufacturing a cap, a light emitting device, and a method for manufacturing the same.

Patent Document 1 describes a hermetically sealed package having a ceramic substrate on which an element is mounted and a window connected to the substrate. A metallized layer is formed on the surface of the ceramic substrate and the surface of the window, respectively, and the metallized layer on the surface of the ceramic substrate and the metallized layer on the surface of the window are connected with a solder material.

JP 2014-82452 A

In order to reduce the reflection of light on the window, it is effective to provide the surface of the window with an antireflection film. However, if an antireflection film is provided on the window, reflection of the laser beam for position detection during laser scribing or the like is also suppressed. For example, when performing laser scribing, the object is irradiated with a detection laser beam, and the position of the object is detected by the reflected light. However, when an anti-reflection film is formed on the object to be processed, the detection laser light is transmitted through the anti-reflection film, which reduces the amount of reflected light, making it difficult to detect the position of the object. .

The present disclosure includes the following inventions.
a translucent member having a first main surface; a plurality of frame-shaped metal films provided on the first main surface; a preparation step of preparing a translucent member composite having a plurality of antireflection films;
By performing laser scribing using the first main surface as a laser beam irradiation surface with the region where the antireflection film is not provided between the adjacent metal films as the planned division position, the translucent member composite is divided into individual pieces. a separation step of separating into pieces to obtain caps;
A method of manufacturing a cap for a light emitting device comprising:

a package comprising a cap manufactured by the method described above, a body provided with a recess and a metal film provided on the surface of the body around the recess, a light emitting element disposed within the recess of the package; a second preparation step of preparing
a bonding step of bonding the metal film of the cap and the metal film of the package via a bonding material containing a metal material;
A method for manufacturing a light-emitting device comprising:

a translucent member having a first main surface; a frame-shaped first metal film provided on the first main surface; 1 an antireflection film spaced apart from the metal film;
a package having a body provided with a recess and a second metal film provided on a surface of the body around the recess;
a bonding material containing a metal material for bonding the first metal film and the second metal film;
a light emitting element arranged in a space surrounded by the cap and the package;
A light emitting device.

As a result, the cap for the light emitting device provided with the antireflection film can be manufactured with high accuracy, and the light emitting device using the cap can be manufactured. Also, a light-emitting device can be obtained in which the bonding material is less likely to adhere to the antireflection film.

4 is a flow chart schematically showing a manufacturing process of the light emitting device according to the embodiment; FIG. 4 is a schematic plan view of a translucent member composite; FIG. 2B is a schematic cross-sectional view taken along line IIB-IIB in FIG. 2A; It is a schematic plan view for demonstrating a singulation process. It is a typical sectional view for explaining a singulation process. It is a typical sectional view for explaining a singulation process. It is a typical sectional view of a cap. 1 is a schematic cross-sectional view of a package and a light emitting element; FIG. 1 is a schematic cross-sectional view of a light emitting device; FIG. 4 is a graph showing an example of transmittance of an antireflection film.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiments shown below are examples of methods for embodying the technical idea of the present invention, and the present invention is not limited to the following embodiments. Furthermore, in the following description, the same names and symbols indicate the same or homogeneous members, and detailed description thereof will be omitted as appropriate.

FIG. 1 is a flow chart schematically showing manufacturing steps of a light emitting device according to an embodiment. As shown in FIG. 1, the method for manufacturing a light emitting device according to the embodiment includes a cap manufacturing step S100, a second preparation step S201 for preparing a cap, a package, and a light emitting element, and a bonding step S202 for bonding the cap and the package. and The cap manufacturing step S100 includes a first preparation step S101 of preparing a translucent member composite, and a singulation step S102 of singulating the translucent member composite to obtain a cap.

(First preparation step S101)
In the first preparation step S101, as shown in FIGS. 2A and 2B, the translucent member composite 10 is prepared. 2A is a schematic plan view of the translucent member composite 10, and FIG. 2B is a schematic cross-sectional view taken along line IIB-IIB in FIG. 2A. A translucent member composite 10 includes a translucent member 11 having a first main surface 11a and a second main surface 11b, a plurality of first metal films 12 provided on the first main surface 11a, and a plurality of reflective films. and a prevention film 13 . In FIG. 2A, the first metal film 12 is frame-shaped. The antireflection films 13 are provided on at least regions of the first main surface 11a surrounded by the first metal films 12, respectively.

The antireflection film 13 is formed avoiding the space between adjacent first metal films 12 . The antireflection film 13 having such a shape is preferably formed by photolithography. As a technique other than the photolithography method, for example, there is a technique of first forming the antireflection film 13 on the entire surface of the first main surface 11a and then removing part of the antireflection film 13 with a blade. However, in this case, there is concern that the antireflection film 13 may be unintentionally peeled off by the blade. Moreover, there is a concern that part of the translucent member 11 is also removed by the blade, and the smoothness of the translucent member 11 is deteriorated. Then, it becomes difficult to condense the processing laser beam L2 inside the translucent member 11 . Therefore, it is preferable to pattern the antireflection film 13 by a photolithography method that does not have such concerns. Further, when the light-transmitting member 11 is made of sapphire, if a groove is formed in the light-transmitting member 11 with a blade, cracks may occur starting from the groove. If this crack extends in a direction different from the crack caused by laser scribing, the smoothness of the cut surface of the translucent member 11 is impaired. From this point of view as well, it is preferable to pattern the antireflection film 13 by the photolithography method.

Preferably, the first metal film 12 is in direct contact with the translucent member 11, as shown in FIG. 2A. The adhesion between the first metal film 12 and the antireflection film 13 tends to be inferior to the adhesion between the first metal film 12 and the translucent member 11 . Therefore, by providing the first metal film 12 in contact with the translucent member 11, the possibility of peeling of the first metal film 12 can be reduced. Further, when the first metal film 12 contains Au, the adhesion between this Au and SiO ₂ or the like constituting the antireflection film 13 tends to be low. Therefore, in this case, it is preferable to provide an Au diffusion prevention layer with a sufficient thickness between the Au and the antireflection film 13 . If the first metal film 12 and the antireflection film 13 do not come into contact with each other, such a sufficiently thick anti-diffusion layer can be eliminated, so the total film thickness of the first metal film 12 can be reduced. can.

The first metal film 12 has, for example, a structure in which Ti/Pt/Au are laminated in this order from the translucent member 11 side. A dielectric multilayer film in which different materials such as Ta ₂ O ₅ and SiO ₂ , Nb ₂ O ₅ and SiO ₂ , or TiO ₂ and SiO ₂ are alternately laminated can be used as the antireflection film 13 . For the antireflection film 13, for example, both the layer closest to and farthest from the translucent member 11 are _SiO2 films. The translucent member 11 is, for example, sapphire.

As shown in FIG. 2A, it is preferable that each of the plurality of antireflection films 13 is provided only in a region surrounded by the first metal film 12 on the first major surface 11a. In addition, it is preferably spaced apart from the first metal film 12 . By providing a gap between the first metal film 12 and the antireflection film 13 in this way, even if a bonding material, which will be described later, protrudes from the first metal film 12, it can be stopped in the gap. Therefore, it is possible to reduce the possibility that the bonding material adheres to the surface of the antireflection film 13 .

The translucent member 11 is made of a material translucent to light emitted from a light emitting element, which will be described later. Sapphire, for example, can be used as a material for such a translucent member 11 . The shortest distance between adjacent first metal films 12 is suitable to be 30 μm or more for laser scribing. Moreover, the upper limit of the shortest distance between the first metal films 12 can be set to 800 μm or less, for example. As shown in FIG. 2B , the translucent member composite 10 may further have an antireflection film 14 provided on the second main surface 11 b of the translucent member 11 .

(Singulation step S102)
As shown in FIG. 3, regions between the adjacent first metal films 12 where the antireflection film 13 is not provided are assumed to be division positions D1 and D2. In the singulation step S102, as shown in FIGS. 4 and 5, laser scribing is performed at the planned division position D1. Laser scribing is performed in the same manner for the planned division position D2. As a result, the translucent member composite 10 is singulated to obtain the cap 20 shown in FIG. 3 is a schematic plan view for explaining the singulation step S102, FIGS. 4 and 5 are schematic cross-sectional views for explaining the singulation step S102, and FIG. 6 is a schematic diagram of the cap 20. It is a cross-sectional view.

In laser scribing, the first main surface 11a is used as a laser beam irradiation surface. That is, the laser beam in the laser scribing is applied from the first main surface 11a side. As shown in FIG. 4, first, the first main surface 11a is irradiated with the detection laser beam L1. Since the antireflection film 13 is not provided at the planned division position D1, the detection laser beam L1 is likely to be reflected by the first main surface 11a. Thereby, the position of the first main surface 11a can be detected more accurately. Then, as shown in FIG. 5, the processing laser beam L2 is similarly irradiated from the first main surface 11a side. The focal position of the processing laser beam L2 is set inside the translucent member 11, for example. In this case, a wavelength that can pass through the translucent member 11 is selected as the wavelength of the processing laser beam L2. When the translucent member 11 is sapphire, the peak wavelength of the processing laser beam L2 is preferably 400 nm or more. For example, a laser beam with a peak wavelength of 1064 nm can be used as the processing laser beam L2. As the detection laser beam L1, for example, a laser beam having a peak wavelength of 635 nm or within the range of 810 to 870 nm can be used.

By irradiating the translucent member 11 with the processing laser beam L2, a crack is generated at the focus position of the processing laser beam L2 and its vicinity. The irradiation of the processing laser beam L2 is performed intermittently along each of the planned division positions D1 and D2. Cracks generated by each irradiation extend vertically and horizontally as time elapses and/or as a result of the breaking process. These cracks connect with each other and reach both the first main surface 11a and the second main surface 11b, whereby the translucent member composite 10 is singulated. Since the position detection by the detection laser beam L1 is highly accurate, the focal position can be set with higher accuracy. Therefore, the translucent member 11 can be singulated with higher accuracy.

In addition, since the antireflection film 14 is a thin film compared to the translucent member 11 , it can be separated by a crack generated in the translucent member 11 . Alternatively, they may be completely separated by performing a breaking step. As with the antireflection film 13, the antireflection film 14 may be provided to avoid the planned division positions D1 and D2. By providing the antireflection film 13 while avoiding the planned division positions D1 and D2, cracks for singulation are less likely to reach the antireflection film 13, so it is thought that peeling of the antireflection film 13 can be suppressed. be done. Similarly, if the antireflection film 14 is provided so as to avoid the planned division positions D1 and D2, it is possible to suppress the peeling of the antireflection film 14 from the translucent member 11 .

A protective film may be provided on the first metal film 12 before laser scribing. In this way, even if fragments of the translucent member 11 or the like are scattered by laser scribing, they can be prevented from adhering to the first metal film 12 . The protective film is removed before the bonding process.

(Second preparation step S201)
In the second preparation step S201, in addition to the cap 20 obtained by the above steps, as shown in FIG. 7, the package 30 and the light emitting element 40 are prepared. FIG. 7 is a schematic cross-sectional view of the package 30 and the light emitting element 40. FIG. The package 30 includes a body 31 provided with a recess and a second metal film 32 provided on the surface of the body 31 around the recess. The light emitting element 40 is arranged within the recess of the package 30 .

The main material of the main body 31 of the package 30 is ceramics, for example. Examples of ceramics include aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and the like. For example, a metal layer can be formed on the surface or inside of ceramics, and electricity can be passed through the metal layer to the light emitting element 40 .

Examples of the light emitting element 40 include light emitting diodes (LEDs) and laser diodes. A compound semiconductor such as a III-V group semiconductor can be used for the light emitting element 40 . As the light emitting element 40, for example, a semiconductor laser diode having a semiconductor laminate made of a nitride semiconductor such as InGaN or GaN can be used. The light emitting element 40 may be fixed to the package 30 via the submount 50 . Further, a reflecting member 60 that reflects the light emitted by the light emitting element 40 toward the translucent member 11 may be provided. A plurality of light emitting elements 40 may be provided. For example, one each of the light emitting elements 40 that emit red, green, and blue light may be arranged.

(Joining step S202)
In the bonding step S<b>202 , the first metal film 12 of the cap 20 and the second metal film 32 of the package 30 are bonded via the bonding material 70 . Thereby, as shown in FIG. 8, a light emitting device 80 can be obtained. FIG. 8 is a schematic cross-sectional view of a light emitting device. The light-emitting device 80 has a cap 20 , a package 30 , and a light-emitting element 40 arranged in a space surrounded by the cap 20 and the package 30 . The first metal film 12 of the cap 20 and the second metal film 32 of the package 30 are joined by a joining material 70 .

As the bonding material 70, a material is selected which has higher wettability with respect to the first metal film 12 than with the translucent member 11 and higher wettability with respect to the second metal film 32 than with respect to the main body 31. be able to. The bonding material 70 contains, for example, a metal material.

As described above, it is preferable that the antireflection film 13 is provided only on the area surrounded by the first metal film 12 on the first main surface 11 a and is spaced apart from the first metal film 12 . This can reduce the possibility that the bonding material 70 will adhere to the surface of the antireflection film 13 , thereby suppressing a decrease in the light output of the light emitting device 80 due to such adhesion. The shortest distance between the first metal film 12 and the antireflection film 13 can be, for example, 2 μm or more. The antireflection film 13 is preferably provided in a region where at least the main part of the light from the light emitting element 40 is irradiated, and the shortest distance between the first metal film 12 and the antireflection film 13 is, for example, 140 μm or less.

When a semiconductor laser diode whose main material is a III-V group compound semiconductor is used as the light emitting element 40, it is preferable to hermetically seal the semiconductor laser diode by surrounding it with the package 30 and the cap 20. FIG. As a result, it is possible to suppress a decrease in optical output due to dust collection. When airtight sealing is not performed, the first metal film 12 does not have to be frame-shaped, but when airtight sealing is performed, the first metal film 12 preferably has a frame shape. The second metal film 32 is also the same. Since the first metal film 12 and the second metal film 32 are frame-shaped, airtight sealing is possible by bringing the bonding material 70 into contact with substantially the entire surfaces thereof.

In the above embodiment, the first main surface 11a provided with the first metal film 12 is used as the laser light irradiation surface during laser scribing, but the second main surface 11b may be used as the laser light irradiation surface. In this way, even if fragments of the translucent member 11 and the like are scattered by laser scribing, such fragments are less likely to adhere to the surface of the first metal film 12, which is the bonding surface. When the second main surface 11b is used as the laser beam irradiation surface, it is preferable not to provide the antireflection film 14 provided on the second main surface 11b at the laser scribing position. As a result, the antireflection film 14 does not interfere with the position detection by the detection laser beam.

Further, as the antireflection film, a film having a transmittance that allows the light from the light emitting element 40 to pass through but hardly allows the detection laser light to pass through may be used. That is, an antireflection film having a higher transmittance for the light from the light emitting element 40 than for the detection laser beam may be used. When such an antireflection film is used, the patterning process can be omitted because the antireflection film does not have to be removed at the division planned positions. An example of the transmittance of such an antireflection film is shown in FIG. In FIG. 9, "red" is an example of a peak wavelength range of red laser light, "green" is an example of a peak wavelength range of green laser light, and "blue" is an example of a peak wavelength range of blue laser light. be. When three types of laser diodes are used as the light emitting element 40, the transmittance of each light is increased. The transmittance for the peak wavelength of light from each light emitting element 40 is, for example, 95% or more, preferably 95% or more, in all angle ranges of 0 degrees, 20 degrees, and 40 degrees from the direction perpendicular to the main surface of the antireflection film. 98% or more. As the detection laser light, it is preferable to use laser light whose peak wavelength is not within the range of the peak wavelength of the light emitting element 40 . It is preferable that the transmittance of the antireflection film for the peak wavelength of the detection laser light is approximately the same as the transmittance of the translucent member 11 without the antireflection film for the wavelength. For example, the transmittance of the antireflection film for the wavelength can be the same as that of the translucent member 11, or can be increased within a range of +5% or less. The smaller the emission color of the light emitting element 40, the easier it is to form an antireflection film having such a transmittance. Therefore, one type of light emitting element 40 may be used.

The light-emitting device described in the embodiments can be used for projectors, vehicle-mounted headlights, lighting, display backlights, and the like.

10 translucent member composite 11 translucent member 11a first main surface, 11b second main surface 12 first metal films 13, 14 antireflection film 20 cap 30 package 31 main body 32 second metal film 40 light emitting element 50 sub Mount 60 Reflecting member 70 Joining material 80 Light-emitting devices D1, D2 Planned division position L1 Detection laser beam L2 Processing laser beam

Claims (7)

a translucent member having a first main surface; a plurality of frame-shaped metal films provided in direct contact with the first main surface; a preparation step of preparing a translucent member composite having a plurality of antireflection films respectively provided only in regions surrounded by the metal film;
By performing laser scribing using the first main surface as a laser beam irradiation surface with the region where the antireflection film is not provided between the adjacent metal films as the planned division position, the translucent member composite is divided into individual pieces. a separation step of separating into pieces to obtain caps;
A method of manufacturing a cap for a light emitting device comprising: 2. The light emitting device according to claim 1, wherein in said preparation step, said antireflection film is formed by a photolithographic method such that a region where said antireflection film is not provided is positioned between said adjacent metal films. method of making caps for 3. The method of manufacturing a cap for a light-emitting device according to claim 1, wherein in said preparing step, said translucent member is sapphire. A package comprising: a cap manufactured by the method according to any one of claims 1 to 3 ; a body provided with a recess and a metal film provided on the surface of the body around the recess; and the package. a second preparation step of preparing a light emitting element arranged in the recess of the
a bonding step of bonding the metal film of the cap and the metal film of the package via a bonding material containing a metal material;
A method for manufacturing a light-emitting device comprising: a translucent member having a first main surface; a frame-shaped first metal film provided on the first main surface; 1 an antireflection film spaced apart from the metal film;
a package having a body provided with a recess and a second metal film provided on a surface of the body around the recess;
a bonding material containing a metal material for bonding the first metal film and the second metal film;
a light emitting element arranged in a space surrounded by the cap and the package;
A light emitting device. a translucent member having a first main surface; a frame-shaped first metal film provided on the first main surface; an antireflection film provided only in a region surrounded by one metal film;
a package having a main body and a frame-shaped second metal film provided on the surface of the main body;
a bonding material containing a metal material for bonding the first metal film and the second metal film;
a semiconductor laser diode arranged in a space surrounded by the cap and the package;
A light emitting device. 7. The light emitting device according to claim 5, wherein the shortest distance between said first metal film and said antireflection film is 2 [mu]m or more and 140 [mu]m or less.

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