TW202026556A - Laser package structure - Google Patents

Laser package structure Download PDF

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TW202026556A
TW202026556A TW108112710A TW108112710A TW202026556A TW 202026556 A TW202026556 A TW 202026556A TW 108112710 A TW108112710 A TW 108112710A TW 108112710 A TW108112710 A TW 108112710A TW 202026556 A TW202026556 A TW 202026556A
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area
circuit layer
circuit
laser
conductive
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TWI715965B (en
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陳輝
時軍朋
廖啟維
永特 黃
徐宸科
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大陸商泉州三安半導體科技有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/0231Stems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02255Out-coupling of light using beam deflecting elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/0232Lead-frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04256Electrodes, e.g. characterised by the structure characterised by the configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02257Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0239Combinations of electrical or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4056Edge-emitting structures emitting light in more than one direction

Abstract

A laser package structure comprises: a frame comprising a front circuit layer, a back circuit layer and an internal circuit layer positioned inside the frame, wherein the internal circuit layer has multiple circuit connection units, each circuit connection unit has a first connection through hole and a second connection through hole, the first connection through hole is connected to the front circuit layer, the second connection through hole is connected to the back circuit layer, the second connection through hole is positioned at one end portion of the circuit connection unit, and the first connection through hole is positioned at an inner side of the second connection through hole; and a laser chip fixed at the front circuit layer of the frame, and used to emit a first laser beam.

Description

雷射器封裝結構及光源模組Laser packaging structure and light source module

本發明是有關於一種雷射器,特別是指一種高功率的雷射器封裝結構,及一種包括雷射器封裝結構的光源模組。The invention relates to a laser, in particular to a high-power laser packaging structure, and a light source module including the laser packaging structure.

由於半導體雷射器(LD)有著單色性好、體積小、壽命長、高功率密度和高速工作的優異特點,半導體雷射器在雷射測距、雷射雷達、雷射通信、雷射模擬武器、自動控制、檢測儀器甚至醫療美容等方面已經獲得了廣泛的應用,形成了廣闊的市場。Since semiconductor lasers (LD) have excellent characteristics of good monochromaticity, small size, long life, high power density and high-speed operation, semiconductor lasers are used in laser ranging, laser radar, laser communication, laser Simulation weapons, automatic control, detection instruments and even medical beauty have been widely used, forming a broad market.

因此,本發明之目的,即在提供一種至少能夠克服先前技術的缺點的雷射器封裝結構。Therefore, the purpose of the present invention is to provide a laser package structure that can at least overcome the disadvantages of the prior art.

於是,本發明雷射器封裝結構,包含一支架,及至少一雷射晶片。Therefore, the laser package structure of the present invention includes a bracket and at least one laser chip.

該支架包括一具有相反的一第一表面及一第二表面的支架本體、一位於該支架本體之第一表面的第一電路層、一位於該支架本體之第二表面的第二電路層,及一嵌入該支架本體中的內部電路層,所述內部電路層具有多個電路連接單元,每個電路連接單元具有一電路塊、一連接該電路塊與該第一電路層的第一導電貫通件組(via),以及一連接該電路塊與該第二電路層的第二導電貫通件組起始端部。The bracket includes a bracket body having opposite first and second surfaces, a first circuit layer on the first surface of the bracket body, and a second circuit layer on the second surface of the bracket body, And an internal circuit layer embedded in the bracket body, the internal circuit layer has a plurality of circuit connection units, each circuit connection unit has a circuit block, a first conductive through connecting the circuit block and the first circuit layer A via, and a start end of a second conductive through-component group connecting the circuit block and the second circuit layer.

該至少一雷射晶片固定於該支架的第一電路層上,可發射一雷射光束。The at least one laser chip is fixed on the first circuit layer of the bracket and can emit a laser beam.

本發明之另一目的,在於提供另一種雷射器封裝結構。Another objective of the present invention is to provide another laser packaging structure.

於是,本發明雷射器封裝結構,包含一支架,及至少二個雷射晶片。Therefore, the laser package structure of the present invention includes a bracket and at least two laser chips.

該支架包括一具有相反的一第一表面及一第二表面的支架本體、一位於該支架本體的第一表面的第一電路層、一位於該支架本體的第二表面的第二電路層,及一嵌入該支架本體內的內部電路層,所述第一電路層包含至少兩個安裝單元,每一安裝單元包括相互間隔的一第一區域及一第二區域,所述內部電路層具有多個電路連接單元,每個電路連接單元具有一電路塊、一連接該電路塊與該第一電路層的第一導電貫通件組,及一連接該電路塊與該第二電路層的第二導電貫通件組。The bracket includes a bracket body with a first surface and a second surface opposite to each other, a first circuit layer on the first surface of the bracket body, and a second circuit layer on the second surface of the bracket body, And an internal circuit layer embedded in the stent body. The first circuit layer includes at least two mounting units. Each mounting unit includes a first area and a second area spaced apart from each other. The internal circuit layer has multiple Circuit connection units, each circuit connection unit has a circuit block, a first conductive through-piece group connecting the circuit block and the first circuit layer, and a second conductive via connecting the circuit block and the second circuit layer Through-piece group.

所述雷射晶片,分別安裝於該支架的第一電路層的各個安裝單元的第一區域,可發射一雷射光束。The laser chip is respectively mounted on the first area of each mounting unit of the first circuit layer of the bracket and can emit a laser beam.

本發明之又一目的,在於提供一種包括上述其中一種雷射器封裝結構的光源模組。Another object of the present invention is to provide a light source module including one of the above-mentioned laser packaging structures.

上述雷射器封裝結構可應用於車頭燈、工礦燈、雷射電視或投影儀等。以雷射車燈為例,雷射車燈比LED車大燈具有更高密度的光輸出和更小的發光角,照射距離可達600米,是LED車大燈的兩倍之遠。The above laser packaging structure can be applied to car headlights, high bay lights, laser TVs or projectors, etc. Take laser headlights as an example. Laser headlights have a higher density of light output and a smaller luminous angle than LED headlights. The irradiation distance can reach 600 meters, which is twice as far as LED headlights.

本發明之功效在於:通過對支架的設計,可安裝單顆或者多顆雷射晶片,且多顆雷射晶片可根據需求獨立控制其開啟或關閉,及亮度可獨立調整。The effect of the present invention is that through the design of the bracket, a single or multiple laser chips can be installed, and multiple laser chips can be independently controlled to be turned on or off according to requirements, and the brightness can be independently adjusted.

在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers.

參閱圖1至圖4,本發明雷射器封裝結構的一第一實施例包括一支架200、二個可發射不同或相同波長之雷射光束的雷射晶片(LD晶片)220、一光學元件230,以及一蓋板240。1 to 4, a first embodiment of the laser package structure of the present invention includes a bracket 200, two laser chips (LD chips) 220 that can emit laser beams of different or the same wavelength, and an optical element 230, and a cover 240.

該支架200包括一作為一封裝杯的支架本體210。The bracket 200 includes a bracket body 210 as a package cup.

該支架本體具有一底部211,及一自該底部211周緣往上延伸的側部212。該底部211及該側部212共同界定一個凹槽213。該凹槽213平行於該支架本體210的第一表面2113的橫截面呈矩形。該支架本體210的底部具有相反的一第一表面2113及一第二表面2114。該第一表面2113為該底部211的上表面,該第二表面2114為該底部211的下表面。在本實施例中, 較佳的,該底部211呈臺階狀,並包括一高部2111,和一被該高部2111圍繞的低部2112。在本實施例中,該支架本體210較佳地為一陶瓷支架,可以例如Al2O3、AlN等材質製成,其上設有電路。該等雷射晶片220水平地放置於該支架本體210的底部211的第一表面2113。較佳地,該等雷射晶片220直接設置在該高部2111的一表面。該光學元件230設置在該低部2112的一表面上。The bracket body has a bottom portion 211 and a side portion 212 extending upward from the periphery of the bottom portion 211. The bottom 211 and the side 212 jointly define a groove 213. The cross section of the groove 213 parallel to the first surface 2113 of the bracket body 210 is rectangular. The bottom of the bracket body 210 has a first surface 2113 and a second surface 2114 opposite to each other. The first surface 2113 is the upper surface of the bottom 211, and the second surface 2114 is the lower surface of the bottom 211. In this embodiment, preferably, the bottom portion 211 is step-shaped and includes a high portion 2111 and a low portion 2112 surrounded by the high portion 2111. In this embodiment, the bracket body 210 is preferably a ceramic bracket, which can be made of materials such as Al 2 O 3, AlN, etc., and has a circuit on it. The laser chips 220 are placed horizontally on the first surface 2113 of the bottom 211 of the holder body 210. Preferably, the laser chips 220 are directly arranged on a surface of the high portion 2111. The optical element 230 is disposed on a surface of the low portion 2112.

在本實施例中,製成該支架本體210的陶瓷可以使用具有高熱導率的陶瓷材料。該支架本體210具有封裝杯和多層平臺結構。該平台結構之平臺的高度差d(即該高部2111與該低部2112的高度差)為0.1~0.5mm。較佳地,d可以為0.1~0.3mm。該等LD晶片220水準放置於較高平臺(即該高部2111)上。該光學元件230包括一具有高反射率且為傾斜的側面231),及一遠離該支架本體210之低部2111的頂面232,並放置於較低平臺(即該低部2112),可將該等LD晶片220發出的平行於該第一表面2113的水平方向光反射後轉換成垂直於該第一表面2113之垂直方向的光並射出,進而提升封裝結構之法向方向的出光效率,也有利於雷射晶片件的光學設計。較佳地,所述LD晶片220的一出光端面220A與支架臺階的一豎直面2115平齊,更佳的,所述LD晶片220的出光端面220A凸出於該臺階的豎直面2115,防止所述LD晶片220所發出的光束照射到該支架本體210的固晶平臺(即該高部2111)上。In this embodiment, the ceramic used for making the bracket body 210 may use a ceramic material with high thermal conductivity. The bracket body 210 has a packaging cup and a multilayer platform structure. The height difference d of the platform of the platform structure (that is, the height difference between the high portion 2111 and the low portion 2112) is 0.1 to 0.5 mm. Preferably, d may be 0.1 to 0.3 mm. The LD chips 220 are horizontally placed on a higher platform (ie, the high part 2111). The optical element 230 includes a high reflectivity and inclined side surface 231), and a top surface 232 away from the lower portion 2111 of the support body 210, and is placed on a lower platform (ie, the lower portion 2112). The light emitted by the LD chips 220 in the horizontal direction parallel to the first surface 2113 is reflected and converted into light perpendicular to the vertical direction of the first surface 2113 and emitted, thereby improving the light extraction efficiency in the normal direction of the package structure. Conducive to the optical design of the laser chip. Preferably, a light-emitting end surface 220A of the LD chip 220 is flush with a vertical surface 2115 of the support step. More preferably, the light-emitting end surface 220A of the LD chip 220 protrudes from the vertical surface 2115 of the step to prevent The light beam emitted by the LD chip 220 irradiates the die-bonding platform of the holder body 210 (that is, the high portion 2111).

更具體地,該光學元件230的頂面232為一個供封裝製程中適用於一吸嘴拾取元件(圖未示出)使用的平臺。需說明的是,該頂面232所提供之能供該吸嘴拾取元件使用的功能不是必須。較佳地,該頂面之面積大於0.5 mm×0.5mm。進一步地,該光學元件230的側面231經形成一高反射率鍍層而包括一反射面。該高反射率鍍層的製成材料可以選自Ag、Al及Au等金屬反射層,或者可選自SiO2、TiO2、MgF2及Al2O3等氧化物介電膜反射層。該光學元件230之側面231的反射面數量可以是若干個,不同反射面的形狀或者角度可以不同。在具有多個反射面的情況下,可根據不同應用需求,利用調整反射面角度的方式,進而控制多顆LD晶片220之出光光斑的交疊程度,使該雷射器封裝結構成為一具有多個不同發光角的光源。More specifically, the top surface 232 of the optical element 230 is a platform suitable for picking up elements (not shown) by a nozzle in the packaging process. It should be noted that the function provided by the top surface 232 that can be used by the nozzle to pick up components is not necessary. Preferably, the area of the top surface is greater than 0.5 mm×0.5 mm. Further, the side surface 231 of the optical element 230 is formed with a high-reflectivity coating to include a reflective surface. The material of the high-reflectivity coating can be selected from metal reflective layers such as Ag, Al, and Au, or can be selected from oxide dielectric film reflective layers such as SiO2, TiO2, MgF2, and Al2O3. The number of reflective surfaces on the side surface 231 of the optical element 230 can be several, and the shapes or angles of different reflective surfaces can be different. In the case of multiple reflective surfaces, according to different application requirements, the angle of the reflective surface can be adjusted to control the overlap degree of the light spots of the multiple LD chips 220, so that the laser package structure has multiple Light sources with different luminous angles.

該蓋板240覆蓋在該支架本體210的一頂面214,用於密封位於該支架本體210之凹槽213之內的元件。該蓋板240與該支架210之間可以利用充填矽膠或者Au-Sn共晶的方式密封。該蓋板240材料可以是玻璃、石英、藍寶石、透明陶瓷等,還可以根據不同光色需求而以一波長轉換材料製成。需說明的是,本發明並不侷限於利用該蓋板240進行密封該支架200中的各個元件。於另一些實施方式中,也可省略該蓋板,直接將矽膠填充於支架210的凹槽213,以覆蓋住所有元件,進而以保護該支架210上的元件。The cover 240 covers a top surface 214 of the bracket body 210 for sealing the components located in the groove 213 of the bracket body 210. The cover 240 and the bracket 210 can be sealed by filling silicon or Au-Sn eutectic. The cover plate 240 can be made of glass, quartz, sapphire, transparent ceramics, etc., and can also be made of a wavelength conversion material according to different light color requirements. It should be noted that the present invention is not limited to using the cover 240 to seal each component in the bracket 200. In other embodiments, the cover plate may be omitted, and the groove 213 of the bracket 210 may be directly filled with silicon gel to cover all the components, thereby protecting the components on the bracket 210.

具體地,該支架210還包括了一位於該支架本體210之上表面的第一電路層2600(也就是正面電路層)、一位於該支架本體210之下表面的第二電路層280(也就是背面電路層),以及一嵌入該支架本體210內部的內部電路層270。圖2為在該支架210上固焊所述LD晶片220後的俯視圖,圖3顯示了位於該支架本體210內的內部電路層270的示意圖,圖4顯示了該支架200的280的仰視分佈圖。下面結合圖2~4對第一電路層2600、內部電路層270和該第二電路層280之間的連接關係進行詳細說明。需注意的是,由於圖4是第二電路層270仰視圖,所以對應於圖2中元件的左右位置關係是相反的。Specifically, the bracket 210 also includes a first circuit layer 2600 (that is, the front circuit layer) on the upper surface of the bracket body 210, and a second circuit layer 280 (that is, the lower surface of the bracket body 210). Back surface circuit layer), and an internal circuit layer 270 embedded in the bracket body 210. FIG. 2 is a top view of the LD chip 220 after being solid-soldered on the bracket 210, FIG. 3 shows a schematic diagram of the internal circuit layer 270 located in the bracket body 210, and FIG. 4 shows a bottom view of the 280 of the bracket 200 . The connection relationship between the first circuit layer 2600, the internal circuit layer 270 and the second circuit layer 280 will be described in detail below in conjunction with FIGS. 2 to 4. It should be noted that since FIG. 4 is a bottom view of the second circuit layer 270, the left-right positional relationship corresponding to the components in FIG. 2 is opposite.

該第二電路層280包括四個導電電極281,及一個散熱電極282。為了後續清楚說明元件之間的電連接關係,在圖4中以P1、P2、P3、P4表示該等導電電極。The second circuit layer 280 includes four conductive electrodes 281 and a heat dissipation electrode 282. In order to clearly describe the electrical connection relationship between the components later, the conductive electrodes are represented by P1, P2, P3, and P4 in FIG. 4.

如圖2所示,該支架本體210的第一表面2113具有四個邊緣區域210A~210D,及一個用於放置光學元件230的中央區域C。該第一電路層2600位於該第一表面2113的邊緣區域210A~210D而為一元件安裝區域,並具有兩個安裝單元260。每一安裝單元260包括一第一區域261、一第二區域262和一第三區域263,該三個區域彼此間隔,且是在該支架本體210的第一表面2113塗佈一導電材料。該第一區域261和第三區域263作為一第一電極區塊,該第二區域262作為一第二電極區塊。如圖3所示,該內部電路層270包括多個電路連接單元271~274。以所述電路連接單元271、272為例,該電路單元271包括了一個位於該支架本體210之第一表面2113的其中一個邊緣區域210A的起始端部2711、一自該起始端部271朝向該第一表面2113的另一個邊緣區域210C延伸的延伸部2712、二組連接於所述延伸部2712的第一導電貫通件組(via)A1、C1 (圖示用黑色填充的圓圈示意),及一連接於該起始端部2711的第二導電貫通件組B1(圖示用白色填充的圓圈示意)。並且,該起始端部2711與該延伸部2712共同構成一個電路塊。該電路單元272包括了一個位於該支架本體210之第一表面2113的其中一個邊緣區域210C的起始端部2721、一自該起始端部272朝向該第一表面2113的另一個邊緣區域210A延伸的延伸部2722、一連接於所述延伸部2722的第一導電貫通件組A2(圖示用黑色填充的圓圈示意),及一連接於該起始端部2721的第二導電貫通件組B2(圖示用白色填充的圓圈示意)。並且,該起始端部2721與該延伸部2722共同構成一個電路塊。所述電路單元271、272的第一導電貫通件組A1、A2、C2往上而延伸而與該第一電路層2600的連接,所述第二導電貫通件組B1、B2往下延伸而與所述導電電極281連接。也就是說,所述支架本體210具有三個以上連接該第一表面2113與該第二表面2113的側面,該內部電路層270的每一電路連接單元271~274的電路塊的起始端部鄰近所述支架本體210的其中一個側面,該延伸部自該起始端部朝向所述支架的其他側面延伸。As shown in FIG. 2, the first surface 2113 of the bracket body 210 has four edge regions 210A to 210D, and a central region C for placing the optical element 230. The first circuit layer 2600 is located at the edge regions 210A to 210D of the first surface 2113 to be a component mounting region and has two mounting units 260. Each mounting unit 260 includes a first area 261, a second area 262, and a third area 263. The three areas are spaced apart from each other, and a conductive material is coated on the first surface 2113 of the bracket body 210. The first area 261 and the third area 263 serve as a first electrode block, and the second area 262 serves as a second electrode block. As shown in FIG. 3, the internal circuit layer 270 includes a plurality of circuit connection units 271-274. Taking the circuit connection units 271 and 272 as an example, the circuit unit 271 includes a starting end portion 2711 located at one of the edge regions 210A of the first surface 2113 of the bracket body 210, and a starting end portion 271 faces the The extension portion 2712 extending from the other edge area 210C of the first surface 2113 is two sets of the first conductive through member groups (via) A1 and C1 connected to the extension portion 2712 (illustrated by a black filled circle), and A second conductive through member group B1 connected to the starting end 2711 (shown by a circle filled with white in the figure). In addition, the starting end portion 2711 and the extending portion 2712 together constitute a circuit block. The circuit unit 272 includes a starting end portion 2721 located at one of the edge regions 210C of the first surface 2113 of the bracket body 210, and a starting end portion 272 extending toward the other edge region 210A of the first surface 2113. The extension portion 2722 is connected to the first conductive through member group A2 of the extension portion 2722 (indicated by a black filled circle), and a second conductive through member group B2 connected to the starting end 2721 (Figure (Shown with a white filled circle). In addition, the starting end portion 2721 and the extending portion 2722 together form a circuit block. The first conductive through element groups A1, A2, C2 of the circuit units 271, 272 extend upward to be connected to the first circuit layer 2600, and the second conductive through element groups B1, B2 extend downward to meet The conductive electrodes 281 are connected. That is to say, the bracket body 210 has more than three side surfaces connecting the first surface 2113 and the second surface 2113, and the start end of the circuit block of each circuit connection unit 271~274 of the internal circuit layer 270 is adjacent to On one side of the bracket body 210, the extension portion extends from the starting end toward the other side of the bracket.

更詳細地說,該電路單元271的第一導電貫通件組A1電連接於該安裝單元260的第一區域261,該電路單元272的該第一導電貫通件組A2電連接於該安裝單元260的第二區域262,該電路單元271的該第一導電貫通件組C2電連接於該安裝單元260的第三區域263。該電路單元271的第二導電貫通件組B1電連接於該第二電路層280的導電電極282,該電路單元272的第二導電貫通件組B2電連接於該第二電路層280的導電電極P2。In more detail, the first conductive through member group A1 of the circuit unit 271 is electrically connected to the first area 261 of the mounting unit 260, and the first conductive through member group A2 of the circuit unit 272 is electrically connected to the mounting unit 260 The second region 262 of the circuit unit 271 is electrically connected to the third region 263 of the mounting unit 260. The second conductive through member group B1 of the circuit unit 271 is electrically connected to the conductive electrode 282 of the second circuit layer 280, and the second conductive through member group B2 of the circuit unit 272 is electrically connected to the conductive electrode of the second circuit layer 280 P2.

進一步地,所述電路連接單元271、272、273、274區分為二個第一電路連接單元271、273和二個第二電路連接單元272、274。位於該支架本體210之第一表面2113之左側的安裝單元260對應地電連接於該內部電路層270的其中一個第一電路連接單元271和其中一個第二電路連接單元272。在本實施例中,另一個第一電路連接單元273類似上述的第一電路連接單元271,並包括兩組電連接至該第一電路層2600之位於該第一表面2113之右側的安裝單元260的第一導電貫通件組、一組電連接至該第二電路層280之導電電極P4的第二導電貫通件組。類似地,另一個第二電路連接單元274類似上述的第二電路連接單元272,並包括一組電連接至該第一表面2113之右側的安裝單元260的第一導電貫通件組和一組電連接至該第二電路層280之導電電極P1的第二導電貫通件組,從而實現了第一、二電路層2600、280(即正、背面電極區塊)之間的電連接關係。以所述第一電路連接單元271和所述第二電路連接單元272來說明,每個第一、二電路連接單元271、272起始端部的第一導電貫通件組A1、A2、C1都位於所述延伸部2712、2722上,所述第二導電貫通件組B1、B2位於所述起始端部2711、2721上,如此可以將所述導電電極281設計為均設置於該支架本體210之第二表面2114的邊緣區域,如圖4所示,該第二電路層280還包括一設置於該第二表面2114之中央區域P5的散熱電極282。進一步的,在所述第一電路連接單元271中,該第一導電貫通件組A1的設置位置相較於該第一導電貫通件組C1,更靠近第二導電貫通件組B1,例如該第一導電貫通件組C1可設置在該延伸部2712之遠離該起始端部2177的位置。具體的,該第一電路連接單元271的起始端部2711位於支架本體210的邊緣區域210A,該延伸部2712朝向支架本體210的邊緣區域210C的方向延伸,該第二導電貫通件組B1位於該起始端部2711,該第一導電貫通件組A1位於該延伸部2712之靠近該起始端部2711的位置,該第一導電貫通件組C1位於該延伸部2712的末端;該第二電路連接單元272的起始端部2721位於支架本體210的邊緣區域210C,該延伸部2722朝向支架本體的邊緣區域210A的方向延伸,該第二導電貫通件組B2位於該起始端部2721,該第一導電貫通件組A2位於該延伸部2712的尾端。該第一電路連接單元271和該第二電路連接單元272位於支架200的左側區域,構成一第一組電路連接單元,並對應及電連接於該第一電路層2600左側的該安裝單元260。該第一電路連接單元273和該第二電路連接單元274位於支架200的右側區域,構成一第二組電路連接單元,並對應及電連接於該第一電路層2600該右側的安裝單元260。Further, the circuit connection units 271, 272, 273, and 274 are divided into two first circuit connection units 271, 273 and two second circuit connection units 272, 274. The mounting unit 260 located on the left side of the first surface 2113 of the bracket body 210 is correspondingly electrically connected to one of the first circuit connection units 271 and one of the second circuit connection units 272 of the internal circuit layer 270. In this embodiment, another first circuit connection unit 273 is similar to the above-mentioned first circuit connection unit 271, and includes two sets of mounting units 260 on the right side of the first surface 2113 that are electrically connected to the first circuit layer 2600 A group of first conductive through-pieces, a group of second group of conductive through-pieces electrically connected to the conductive electrode P4 of the second circuit layer 280. Similarly, another second circuit connection unit 274 is similar to the above-mentioned second circuit connection unit 272, and includes a group of first conductive through-pieces electrically connected to the mounting unit 260 on the right side of the first surface 2113 and a group of electrical The second conductive through-piece group connected to the conductive electrode P1 of the second circuit layer 280 realizes the electrical connection relationship between the first and second circuit layers 2600, 280 (ie, the front and back electrode blocks). Taking the first circuit connection unit 271 and the second circuit connection unit 272 as an illustration, the first conductive through member groups A1, A2, and C1 at the starting end of each of the first and second circuit connection units 271, 272 are all located at On the extension portions 2712, 2722, the second conductive through-piece groups B1, B2 are located on the starting end portions 2711, 2721, so that the conductive electrodes 281 can be designed to be all disposed on the first part of the bracket body 210 As shown in FIG. 4, in the edge area of the second surface 2114, the second circuit layer 280 further includes a heat dissipation electrode 282 disposed in the central area P5 of the second surface 2114. Further, in the first circuit connection unit 271, the first conductive through-piece group A1 is arranged at a position closer to the second conductive through-piece group B1 than the first conductive through-piece group C1, for example, the A conductive through member group C1 can be disposed at a position of the extension portion 2712 far away from the starting end portion 2177. Specifically, the starting end portion 2711 of the first circuit connection unit 271 is located at the edge area 210A of the bracket body 210, the extension portion 2712 extends toward the edge area 210C of the bracket body 210, and the second conductive through member group B1 is located at The starting end portion 2711, the first conductive through member group A1 is located at a position of the extension portion 2712 close to the starting end portion 2711, the first conductive through member group C1 is located at the end of the extension portion 2712; the second circuit connection unit The starting end portion 2721 of 272 is located at the edge region 210C of the bracket body 210, the extension portion 2722 extends toward the edge region 210A of the bracket body, the second conductive through-piece group B2 is located at the starting end portion 2721, and the first conductive through The component group A2 is located at the end of the extension 2712. The first circuit connection unit 271 and the second circuit connection unit 272 are located on the left side area of the bracket 200 to form a first group of circuit connection units and are correspondingly and electrically connected to the mounting unit 260 on the left side of the first circuit layer 2600. The first circuit connection unit 273 and the second circuit connection unit 274 are located in the right area of the bracket 200 to form a second group of circuit connection units, and are correspondingly and electrically connected to the mounting unit 260 on the right side of the first circuit layer 2600.

在本實施例中,為方便說明,位於圖2之左側之安裝單元260的第一區域261、第二區域262、第三區域263分別以A、B、A’表示,右側之安裝單元260的第一區域261、第二區域262、第三區域263分別以D、E、D’表示,在該支架本體210的第一表面2113(也就是正面)之第一區域A、第二區域B和第三區域A’構成第一個所述安裝單元260;在該支架本體210的第一表面2113之第一區域D、第二區域E和第三區域D’構成第二個所述安裝單元260。其中,每一第一區域A和第一區域D放置一顆LD晶片220,所述LD晶片220通過多條引線221連接至所述第二區域B、E;每一第三區域A’和第三區域D’分別放置一個ESD保護元件250,所述ESD保護元件250通過一引線251連接至所述第二區域B、E,該第一表面的中央區域C放置該光學元件230。因此,所述第一電路層2600的第一區域A、A’和第三區域D、D’通過該內部電路層270電連接。該第一電路層2600與該第二電路層280之正、背面電極區塊的連接方式如下:所述第一區域A、第三區域A’與該導電電極282電連接,所述第二區域B與該導電電極P2電連接,所述第一區域D、第三區域D’與該導電電極P4電連接,所述第二區域E與該導電電極P1電連接。該光學元件230可以是具有高反射率斜面的側面231的反射元件或者稜鏡元件,能將所述LD晶片220的水平方向的出射光轉換成垂直方向而發光。另一方面,所述內部電路層270的電路連接單元271~274投影至該支架本體210之第一表面2113的位置位於所述光學元件230的位置的外周。所述第二導電貫通件組投影至該支架本體210之第一表面2113的位置位於所述第一表面2113的邊緣區域210A~210D。In this embodiment, for ease of description, the first area 261, second area 262, and third area 263 of the mounting unit 260 on the left side of FIG. 2 are denoted by A, B, and A', respectively, and the mounting unit 260 on the right The first area 261, the second area 262, and the third area 263 are denoted by D, E, and D', respectively. The first area A, the second area B, and the first area A, the second area B, and the The third area A'constitutes the first installation unit 260; the first area D, the second area E, and the third area D'on the first surface 2113 of the bracket body 210 constitute the second installation unit 260 . Wherein, one LD chip 220 is placed in each first area A and first area D, and the LD chip 220 is connected to the second areas B and E through a plurality of leads 221; each third area A'and the first area An ESD protection element 250 is respectively placed in the three regions D′. The ESD protection element 250 is connected to the second regions B and E through a lead 251, and the optical element 230 is placed in the central region C of the first surface. Therefore, the first area A, A'and the third area D, D'of the first circuit layer 2600 are electrically connected through the internal circuit layer 270. The connection between the front and back electrode blocks of the first circuit layer 2600 and the second circuit layer 280 is as follows: the first area A and the third area A'are electrically connected to the conductive electrode 282, and the second area B is electrically connected to the conductive electrode P2, the first area D and the third area D'are electrically connected to the conductive electrode P4, and the second area E is electrically connected to the conductive electrode P1. The optical element 230 may be a reflective element or a ridge element with a side surface 231 with a high reflectivity slope, which can convert the emitted light in the horizontal direction of the LD chip 220 into a vertical direction to emit light. On the other hand, the position of the circuit connection units 271 to 274 of the internal circuit layer 270 projected to the first surface 2113 of the holder body 210 is located on the outer periphery of the position of the optical element 230. The positions where the second conductive through-piece group is projected onto the first surface 2113 of the bracket body 210 are located in the edge regions 210A to 210D of the first surface 2113.

在本實施例的封裝結構中,通過對支架200的電路結構設計,可在封裝杯中進行單顆或者多顆LD晶片200(均配置ESD保護元件250)的封裝,且多顆LD晶片200封裝可根據需求獨立控制其開關,實現亮度可調。In the packaging structure of this embodiment, by designing the circuit structure of the bracket 200, a single or multiple LD chips 200 (all equipped with ESD protection elements 250) can be packaged in the package cup, and multiple LD chips 200 can be packaged The switch can be independently controlled according to requirements to achieve adjustable brightness.

進一步地,在該支架本體210的第二表面2114(也就是背面)的中央區域P5設置與所述導電電極281間隔的該散熱電極282,實現熱電分離,其中背面的導電電極281通過該內部電路層270鋪設的線路、第一、二導電貫通件組和正面的第一、二、三區域261、262、263電連接,背面的中央區域P5的散熱電極282能與後續欲安裝續欲安裝的一PCB電路板100或熱沉金屬基體直接連接(如圖5所示),能利於本發明雷射器封裝結構快速散熱。Further, the heat dissipating electrode 282 spaced from the conductive electrode 281 is provided in the central area P5 of the second surface 2114 (that is, the back surface) of the bracket body 210 to achieve thermoelectric separation, wherein the conductive electrode 281 on the back side passes through the internal circuit The circuit laid on the layer 270, the first and second conductive through-piece groups are electrically connected to the first, second, and third areas 261, 262, and 263 on the front side. The heat dissipation electrode 282 in the central area P5 on the back side can be connected with the ones to be installed later. A PCB circuit board 100 or a metal substrate of a heat sink is directly connected (as shown in FIG. 5), which can facilitate rapid heat dissipation of the laser package structure of the present invention.

進一步地,在一個具體的實施樣態中,該蓋板240可以為波長轉換材料,例如可以採用玻璃螢光片,陶瓷螢光片,單晶螢光片等,此材料熱導率大於10W/m·K。較佳地,經過波長轉換材料後發光角小於90°,並且法向的光強度最大。由於波長轉換過程中存在斯托克斯位移現象和波長轉換材料效率的因素會產生一定熱量,高熱導率的封裝杯的側部212同時可作為波長轉換材料的散熱通道,將波長轉換過程產生的熱量匯出。較佳的,該蓋板240與該支架200之間採用高導熱的結合方式,以實現良好的散熱,其方式包含SAB(Surface Activated Bonding)、ADB(Atomic Diffusion Bonding)等方式,該蓋板240與該支架200之間還可採用高導熱率的透明材料粘結,其導熱率為1W/(m•K)以上為佳。Further, in a specific implementation aspect, the cover 240 may be a wavelength conversion material, for example, glass phosphors, ceramic phosphors, single crystal phosphors, etc. may be used. The thermal conductivity of this material is greater than 10W/ m·K. Preferably, the luminous angle after passing through the wavelength conversion material is less than 90°, and the light intensity in the normal direction is the largest. Due to the Stokes shift phenomenon and the efficiency of the wavelength conversion material during the wavelength conversion process, a certain amount of heat will be generated. The side 212 of the package cup with high thermal conductivity can be used as a heat dissipation channel for the wavelength conversion material at the same time. Heat transfer. Preferably, a high thermal conductivity bonding method is adopted between the cover plate 240 and the bracket 200 to achieve good heat dissipation. The methods include SAB (Surface Activated Bonding), ADB (Atomic Diffusion Bonding), etc., the cover plate 240 A transparent material with high thermal conductivity can also be used to bond with the bracket 200, and the thermal conductivity is preferably above 1W/(m•K).

其次,作為該支架200之導電電極281的焊盤採用熱電分離設計,位於背面的電極通過該內部電路層270鋪設的線路、所述第一、二導電貫通件組而與該支架200的安裝單元260連接,位於背面中央區域的散熱電極282與後續欲安裝的PCB電路板100或熱沉金屬基體直接連接,利於封裝結構快速散熱。Secondly, the pad as the conductive electrode 281 of the bracket 200 adopts a thermoelectric separation design, and the electrode on the back side is connected to the mounting unit of the bracket 200 through the circuit laid by the internal circuit layer 270, the first and second conductive through-piece groups. 260 connection, the heat dissipation electrode 282 located in the central area of the back is directly connected to the PCB circuit board 100 or the metal base of the heat sink to be installed subsequently, which facilitates rapid heat dissipation of the package structure.

第二實施例Second embodiment

參閱圖6~8,為本發明雷射器封裝結構的的一第二實施例。圖6顯示了在該支架本體210上固焊二個LD晶片220後的俯視圖;該第二電路層280的佈置如圖7所示,該內部電路層270的佈置如圖8示。需說明的是,由於圖7是第二電路層270的仰視圖,所以對應於圖6中元件的左右位置關係是相反的。另一方面,在圖8中,該內部電路層270之與該第一電路層2600電連接的第一電導貫通件組圖示用黑色填充的圓圈示意,該內部電路層270之與該第二電路層280電連接的第二電導貫通件組圖示用白色填充的圓圈示意。具體的,在圖6的該第一電路層2600中,為方便說明元件的設置位置與電連接關係,所述第一區域261分別以A、D、F、H表示,所述第二區域分別以B、E、J、G表示,所述第三區域分別以A’、 D’、F’、H’表示,且所述第一、二、三區域261、262、263都作為電極塊。在圖7的該第二電路層280中,為方便說明,所述導電電極281以P1~P4、P6~P9表示,所述支架本體210的第一表面2113的中央區域以C表示,第二表面2114的中央區域以P5表示。第一區域A、該第二區域B和該第三區域A’區塊構成第一個所述安裝單元260;該第一區域D、該第二區域E和該第三區域D’構成第二個所述安裝單元260;該第一區域H、該第二區域J和該第三區域H’共同構成第三個所述安裝單元260;該第一區域F、該第二區域G和該第三區域F’共同構成第四個所述安裝單元260。又,該內部電路層270具有八個電路連接單元271~278,並區分為四個第一電路連接單元271、273、275、277,以及四個第二電路連接單元272、274、276、278。進一步地,該第一電路連接單元271和該第二電路連接單元272構成第一組電路連接單元,並與左上方之該安裝單元260(如圖6)的第一區域A、第二區域B和第三區域A’電連接,該第一電路連接單元273和該第二電路連接單元274構成第二組電路連接單元,並與右上方之該安裝單元260(如圖6)的第一區域D、第二區域E和第三區域D’ 電連接,該第一電路連接單元275和該第二電路連接單元276構成第三組電路連接單元,並與右下方之該安裝單元260(如圖6)的第一區域H、第二區域J和第三區域H’電連接,該第一電路連接單元277和該第二電路連接單元278構成第四組電路連接單元,並與左下方之該安裝單元260(如圖6)的第一區域F、第二區域G和第三區域F’ 電連接。6 to 8 are a second embodiment of the laser package structure of the present invention. FIG. 6 shows a top view of the bracket body 210 after two LD chips 220 are fixedly soldered; the arrangement of the second circuit layer 280 is shown in FIG. 7, and the arrangement of the internal circuit layer 270 is shown in FIG. 8. It should be noted that since FIG. 7 is a bottom view of the second circuit layer 270, the left-right positional relationship corresponding to the components in FIG. 6 is opposite. On the other hand, in FIG. 8, the first electrically conductive through member group of the internal circuit layer 270 electrically connected to the first circuit layer 2600 is shown with a black filled circle, and the internal circuit layer 270 is connected to the second circuit layer 2600. The illustration of the second electrically conductive through member group electrically connected to the circuit layer 280 is indicated by a white filled circle. Specifically, in the first circuit layer 2600 of FIG. 6, in order to facilitate the description of the placement position and electrical connection of the components, the first area 261 is represented by A, D, F, and H, respectively, and the second area Denoted by B, E, J, and G, the third area is denoted by A', D', F', and H'respectively, and the first, second, and third areas 261, 262, and 263 are all used as electrode blocks. In the second circuit layer 280 of FIG. 7, for convenience of description, the conductive electrodes 281 are represented by P1~P4, P6~P9, the central area of the first surface 2113 of the holder body 210 is represented by C, and the second The central area of the surface 2114 is represented by P5. The first area A, the second area B, and the third area A'constitute the first installation unit 260; the first area D, the second area E, and the third area D'constitute the second The first area H, the second area J, and the third area H'together constitute the third installation unit 260; the first area F, the second area G, and the third area The three regions F′ together constitute the fourth installation unit 260. In addition, the internal circuit layer 270 has eight circuit connection units 271 to 278, which are divided into four first circuit connection units 271, 273, 275, and 277, and four second circuit connection units 272, 274, 276, and 278. . Further, the first circuit connection unit 271 and the second circuit connection unit 272 constitute a first group of circuit connection units, and are connected to the first area A and the second area B of the mounting unit 260 (as shown in FIG. 6) on the upper left. Electrically connected to the third area A', the first circuit connection unit 273 and the second circuit connection unit 274 constitute a second group of circuit connection units, and are connected to the first area of the mounting unit 260 (Figure 6) at the upper right D. The second area E and the third area D'are electrically connected. The first circuit connection unit 275 and the second circuit connection unit 276 form a third group of circuit connection units, and are connected to the mounting unit 260 at the bottom right (as shown in the figure). 6) The first area H, the second area J, and the third area H'are electrically connected. The first circuit connection unit 277 and the second circuit connection unit 278 constitute a fourth group of circuit connection units, and are connected to the lower left The first area F, the second area G, and the third area F'of the installation unit 260 (as shown in FIG. 6) are electrically connected.

該封裝結構的支架200可放置四個所述LD晶片220,所述LD晶片220分別放置於所述安裝單元260的第一區域A、C、F、H。另外,所述ESD保護元件250放置分別於所述安裝單元260的第三區域A’、D’、F’、H’,在該第二實施例中,該第一區域A與該第三區域A’、該第一區域D與該第三區域D’、該第一區域F與該第三區域F’、該第一區域H與該第三區域H’在支架本體210內部通過該內部電路層270連通而電連接。正、反面各電極區塊的詳細電連接方式如下:該第一區域A及該第三區域A’與該第二電路層280的導電電極P4連接,該第二區域B與該第二電路層280的導電電極P3連接,該第一區域D及該第三區域D’與該第二電路層280的導電電極P1連接,該第二區域E與該第二電路層280的導電電極P2連接,該第一區域F及該第三區域F’與該第二電路層280的導電電極P9連接,該第二區域G與該第二電路層280的導電電極P8連接,該第一區域H及該第三區域H’與P6連接,該第二區域J與該第二電路層280的導電電極P7連接。背面中央區域P5區塊為散熱電極282;該支架本體210的第一表面2113的中央區域E放置該光學元件230,能對所述LD晶片220往水平方向出射光轉換成垂直方向傳播的光。The bracket 200 of the package structure can place four LD chips 220, and the LD chips 220 are respectively placed in the first regions A, C, F, and H of the mounting unit 260. In addition, the ESD protection element 250 is placed in the third area A', D', F', H'of the mounting unit 260, respectively. In the second embodiment, the first area A and the third area A', the first area D and the third area D', the first area F and the third area F', the first area H and the third area H'pass the internal circuit inside the stent body 210 The layers 270 are connected and electrically connected. The detailed electrical connection of each electrode block on the front and back is as follows: the first area A and the third area A'are connected to the conductive electrode P4 of the second circuit layer 280, and the second area B is connected to the second circuit layer The conductive electrode P3 of 280 is connected, the first area D and the third area D′ are connected to the conductive electrode P1 of the second circuit layer 280, and the second area E is connected to the conductive electrode P2 of the second circuit layer 280, The first area F and the third area F'are connected to the conductive electrode P9 of the second circuit layer 280, the second area G is connected to the conductive electrode P8 of the second circuit layer 280, and the first area H and the The third area H′ is connected to P6, and the second area J is connected to the conductive electrode P7 of the second circuit layer 280. The back central area P5 block is the heat dissipation electrode 282; the central area E of the first surface 2113 of the bracket body 210 is placed with the optical element 230, which can convert the light emitted from the LD chip 220 in the horizontal direction into light propagating in the vertical direction.

第三實施例The third embodiment

參閱圖7、圖9~10,為本發明雷射器的封裝結構的一第三實施例。其中,圖9顯示了在該支架200上固焊所述LD晶片220後的俯視圖,該內部電路層270的設置如圖10所示,該第二電路層280的設置如圖7所示。需說明的是,由於圖7是第二電路層270的仰視圖,所以對應於圖9和圖10中元件的左右位置關係是相反的。為方便說明,四個所述第一區域261分別以A、D、F、H表示,四個所述第二區域262分別以B、E、G、J表示。在圖10中,該內部電路層270之與該第一電路層2600電連接的第一電導貫通件組圖示用黑色填充的圓圈示意,該內部電路層270之與該第二電路層280電連接的第二電導貫通件組圖示用白色填充的圓圈示意。Referring to FIGS. 7 and 9 to 10, they are a third embodiment of the laser package structure of the present invention. 9 shows the top view after the LD chip 220 is fixedly soldered on the support 200, the internal circuit layer 270 is arranged as shown in FIG. 10, and the second circuit layer 280 is arranged as shown in FIG. It should be noted that since FIG. 7 is a bottom view of the second circuit layer 270, the left-right positional relationship corresponding to the components in FIG. 9 and FIG. 10 are opposite. For the convenience of description, the four first regions 261 are represented by A, D, F, and H respectively, and the four second regions 262 are represented by B, E, G, and J respectively. In FIG. 10, the first electrically conductive through member group of the internal circuit layer 270 electrically connected to the first circuit layer 2600 is illustrated with a black filled circle, and the internal circuit layer 270 is electrically connected to the second circuit layer 280. The illustration of the connected second conductive through-piece group is indicated by a white filled circle.

該第三實施例與該第二實施例相似,其不同處在於,在本實施例中,該雷射器封裝結構的光學元件230沿該封裝杯之第一表面2113的斜對角線放置,而在該封裝杯的四個角落設置四個安裝單元260,每個安裝單元260包括該第一區域261和該第二區域262,其中,所述LD晶片220安裝於所述第一區域261上,並盡可能靠近封裝杯之第一表面2113的傾對角線或位於斜對角線上。該內部電路層270如圖10所示,具有多個位於支架本體210之第二表面2114的上側與下側之邊緣區域的電路連接單元,每個電路連接單元呈塊狀結構,以其中一個電路連接單元271來說明,該第二導電貫通件組B1鄰近該支架200的邊緣,該第一導電貫通件組A1相較於第二導電貫通件組B1而位於該支架200的內側,正、背面電極區塊的連接方式如下:該第一區域A與該導電電極P4利用該內部電路層270電連接,該第二區域B與該導電電極P3連接,該第二區域E與該導電電極P2利用該內部電路層270電連接,該第一區域D與該導電電極P1利用該內部電路層270電連接,該第一區域F與該導電電極P9利用該內部電路層270電連接,該第二區域G與該導電電極P8利用該內部電路層270電連接,該第二區域J與該導電電極P7利用該內部電路層270電連接,該第一區域H與該導電電極P6利用該內部電路層270電連接。The third embodiment is similar to the second embodiment. The difference is that in this embodiment, the optical element 230 of the laser package structure is placed along the diagonal line of the first surface 2113 of the package cup. Four mounting units 260 are provided at the four corners of the package cup, and each mounting unit 260 includes the first area 261 and the second area 262, wherein the LD chip 220 is mounted on the first area 261 , And as close as possible to or on the diagonal diagonal of the first surface 2113 of the package cup. As shown in FIG. 10, the internal circuit layer 270 has a plurality of circuit connection units located on the upper and lower edge regions of the second surface 2114 of the bracket body 210. Each circuit connection unit has a block structure, and one circuit The connecting unit 271 illustrates that the second conductive through element group B1 is adjacent to the edge of the bracket 200, and the first conductive through member group A1 is located inside the bracket 200 compared to the second conductive through member group B1, front and back The connection method of the electrode blocks is as follows: the first area A and the conductive electrode P4 are electrically connected by the internal circuit layer 270, the second area B is connected with the conductive electrode P3, and the second area E is connected by the conductive electrode P2. The inner circuit layer 270 is electrically connected, the first area D and the conductive electrode P1 are electrically connected by the inner circuit layer 270, the first area F and the conductive electrode P9 are electrically connected by the inner circuit layer 270, and the second area G and the conductive electrode P8 are electrically connected by the internal circuit layer 270, the second region J and the conductive electrode P7 are electrically connected by the internal circuit layer 270, and the first region H and the conductive electrode P6 are electrically connected by the internal circuit layer 270 Electric connection.

通過如此的電路設計,一方面可以在一定程度上減小封裝結構的尺寸,另一方面簡化了內部電路層的佈置,提高了本發明雷射器封裝結構的可靠性。Through such a circuit design, on the one hand, the size of the packaging structure can be reduced to a certain extent, on the other hand, the layout of the internal circuit layers is simplified, and the reliability of the laser packaging structure of the present invention is improved.

第四實施例Fourth embodiment

參閱圖7、圖11~12,為本發明雷射器封裝結構的一第四實施例。其中,圖11顯示了在支架200上固焊所述LD晶片220後的俯視圖,該內部電路層270的設置如圖12示,該第二電路層280的設置如圖7所示。需說明的是,由於圖7是第二電路層270的仰視圖,所以,對應於圖11和圖12中元件的左右位置關係是相反的。在圖12中,該內部電路層270中之與該第一電路層2600電連接的第一電導貫通件組圖示用黑色填充的圓圈示意,該內部電路層270之與該第二電路層280電連接的第二電導貫通件組圖示用白色填充的圓圈示意。Refer to Fig. 7 and Figs. 11-12, which are a fourth embodiment of the laser package structure of the present invention. Wherein, FIG. 11 shows a top view of the LD chip 220 after the LD chip 220 is fixedly soldered on the support 200, the arrangement of the internal circuit layer 270 is shown in FIG. 12, and the arrangement of the second circuit layer 280 is shown in FIG. It should be noted that since FIG. 7 is a bottom view of the second circuit layer 270, the left-right positional relationship corresponding to the components in FIG. 11 and FIG. 12 is opposite. In FIG. 12, the first electrically conductive through member group in the internal circuit layer 270 that is electrically connected to the first circuit layer 2600 is shown with a black filled circle, and the internal circuit layer 270 and the second circuit layer 280 The illustration of the second electrically conductive through-piece group that is electrically connected is indicated by a white filled circle.

在本實施例中的封裝結構的光學元件230同樣沿封裝杯之第一表面2113的斜對角線放置,在封裝杯的四個角落設置四個安裝單元260。該第四實施例與該第三實施例相似,其不同處在於,該支架210之和內部電路層270的設置不一樣,每個安裝單元260包括第一區域261、第二區域262和第三區域263,其中,所述LD晶片220安裝於第一區域261上,並盡可能靠近封裝杯的傾對角線或位於斜對角線上,所述ESD保護元件250位於第三區域263。該內部電路層270如圖12所示,具有四個第一電路連接單元271、273、275、277和四個第二電路連接單元272、274、276、278。為方便說明,四個所述第一區域261分別以A、D、F、H表示,四個所述第二區域262分別以B、E、G、J表示,四個所述第三區域263分別以A’、D’、F’、H’表示。在圖12中,以該第一電路連接單元271說明該第一電路連接單元271的第一導電貫通件組A1連接至該第一電路層2600的第一區域261,該第一導電貫通件組C1連接至該第一電路層2600的第三區域263,該第二導電貫通件組B1連接至該第二電路層180的導電極281。較佳地,該第二導電貫通件組B1位於該支架200的邊緣區域,所述第一導電貫通件組A1、C1相較於該第二導電貫通件組B1而位於該支架200的內側。在一個具體的實施樣態中,該第一電路連接單元271包括:該位於鄰近支架邊緣區域210C的起始端部2711、一連接於該起始端部2711的第一延伸部2712、一連接於該第一延伸部2712的連接部2713、一連接於該連接部2713的第二延伸部2714和末端部2715。其中,該第二導電貫通件組B1位於該起始端部2711,該第一導電貫通件組A1位於該連接部2713,該第一導電貫通件組C1位於末端部2715。In this embodiment, the optical element 230 of the packaging structure is also placed along the diagonal line of the first surface 2113 of the packaging cup, and four mounting units 260 are provided at the four corners of the packaging cup. The fourth embodiment is similar to the third embodiment. The difference is that the arrangement of the bracket 210 and the internal circuit layer 270 is different. Each mounting unit 260 includes a first area 261, a second area 262, and a third area. In the area 263, the LD chip 220 is mounted on the first area 261 as close as possible to or on the diagonal diagonal of the package cup. The ESD protection element 250 is located in the third area 263. As shown in FIG. 12, the internal circuit layer 270 has four first circuit connection units 271, 273, 275, and 277 and four second circuit connection units 272, 274, 276, and 278. For the convenience of description, the four first regions 261 are represented by A, D, F, and H respectively, the four second regions 262 are represented by B, E, G, and J respectively, and the four third regions 263 They are represented by A', D', F', and H'respectively. In FIG. 12, the first circuit connection unit 271 is used to illustrate that the first conductive through member group A1 of the first circuit connection unit 271 is connected to the first region 261 of the first circuit layer 2600, and the first conductive through member group C1 is connected to the third area 263 of the first circuit layer 2600, and the second conductive through member group B1 is connected to the conductive electrode 281 of the second circuit layer 180. Preferably, the second conductive through element group B1 is located at the edge area of the bracket 200, and the first conductive through member groups A1 and C1 are located inside the bracket 200 compared to the second conductive through member group B1. In a specific implementation, the first circuit connection unit 271 includes: the starting end portion 2711 located adjacent to the edge region 210C of the bracket, a first extension portion 2712 connected to the starting end portion 2711 The connecting portion 2713 of the first extending portion 2712, a second extending portion 2714 and the end portion 2715 connected to the connecting portion 2713. The second conductive through element group B1 is located at the start end 2711, the first conductive through element group A1 is located at the connecting portion 2713, and the first conductive through element group C1 is located at the end portion 2715.

在本實施例中,正、背面電極區塊的連接如下:該第一區域A及該第三區域A’與該導電電極P4利用該內部電路層270電連接,該第二區域B與該導電電極P3電連接,該第一區域D及該第三區域D’與該導電電極P1電連接,該第二區域E與該導電電極P2電連接,該第一區域F及該第三區域F’與該導電電極P9電連接,該第二區域G與該導電電極P8電連接,該第一區域H及該第三區域 H’與該導電電極P6電連接,該第二區域J與該導電電極P7電連接。在本實施例中,可以更大程度地減小雷射器封裝結構的尺寸,或者在與目前之雷射器封裝結構具有相同封裝尺寸之封裝杯中相容更大尺寸的LD晶片。In this embodiment, the connection of the front and back electrode blocks is as follows: the first area A and the third area A'are electrically connected to the conductive electrode P4 by the internal circuit layer 270, and the second area B is electrically connected to the conductive electrode P4. The electrode P3 is electrically connected, the first area D and the third area D'are electrically connected to the conductive electrode P1, the second area E is electrically connected to the conductive electrode P2, the first area F and the third area F' Is electrically connected to the conductive electrode P9, the second area G is electrically connected to the conductive electrode P8, the first area H and the third area H'are electrically connected to the conductive electrode P6, and the second area J is electrically connected to the conductive electrode P8 P7 electrical connection. In this embodiment, the size of the laser package structure can be reduced to a greater extent, or a larger size LD chip can be compatible in a package cup with the same package size as the current laser package structure.

前面各實施例列舉了幾種不同的電路分佈形式,應該理解的是,本發明並不局限於上述幾種電路分佈圖案,可以根據具體的封裝杯形狀或者雷射晶片的尺寸、數量等因素設計各電路層的圖案,從而達到實際的應用需求。The previous embodiments have listed several different circuit distribution forms. It should be understood that the present invention is not limited to the above-mentioned circuit distribution patterns, and can be designed according to the specific package cup shape or the size and quantity of the laser chip. The patterns of each circuit layer can meet actual application requirements.

第五實施例Fifth embodiment

參閱圖圖13,為本發明雷射器封裝結構之一第五實施例。該雷射器封裝結構包括該支架200、該雷射晶片220、該光學元件230和該蓋板240。該第五實施例類似該第一實施例,其不同處在於,該第一實施例的蓋板240包含一金屬框架241和一被該金屬框架圍繞的波長轉換層242。該金屬框架241形成一開口並嵌入波長轉換材料作為該波長轉換層242,該金屬框架240的開口可根據光斑形狀設置成一個或者多個視窗結構(如圖14和15所示)。需說明的是,該波長轉換層242也可用一個不轉換光波長的透光材料來代替。Refer to FIG. 13, which is a fifth embodiment of the laser packaging structure of the present invention. The laser packaging structure includes the bracket 200, the laser chip 220, the optical element 230 and the cover 240. The fifth embodiment is similar to the first embodiment, except that the cover 240 of the first embodiment includes a metal frame 241 and a wavelength conversion layer 242 surrounded by the metal frame. The metal frame 241 forms an opening and embeds a wavelength conversion material as the wavelength conversion layer 242. The opening of the metal frame 240 can be set into one or more window structures according to the shape of the light spot (as shown in FIGS. 14 and 15). It should be noted that the wavelength conversion layer 242 can also be replaced by a transparent material that does not convert the wavelength of light.

在本實施例中,僅在該蓋板240對應地位於該光學元件230上方的位置形一成出光區,減小該雷射器封裝結構的發光角度,同時具有高熱導率的金屬框架241可以更容易傳導出該波長轉換層242產生的熱量。In this embodiment, a light-emitting area is formed only at a position corresponding to the cover 240 above the optical element 230 to reduce the light-emitting angle of the laser package structure, and the metal frame 241 with high thermal conductivity can be The heat generated by the wavelength conversion layer 242 is more easily conducted.

參閱圖16,為第五實施例的另一個形式。本實施例的波長轉換層242形成在該金屬框框架的表面並覆蓋該開口,如此可以增加該波長轉換層242與該金屬框架241的接觸面積,進一步提升波長轉換層242的散熱性能。Refer to Fig. 16 for another form of the fifth embodiment. The wavelength conversion layer 242 of this embodiment is formed on the surface of the metal frame and covers the opening, so that the contact area between the wavelength conversion layer 242 and the metal frame 241 can be increased, and the heat dissipation performance of the wavelength conversion layer 242 can be further improved.

第六實施例Sixth embodiment

參閱圖17,為本發明雷射器封裝結構之一第六實施例公開一種雷射器封裝結構,其包括該支架200、所述雷射晶片220、該光學元件230和該蓋板240。該第六實施例類似該第一實施例,其不同處在於,該光學元件230為帶有高反射斜面的稜鏡,並包含入射面234、反射面235和出射面233。在本實施例中,該波長轉稱層(圖未示出)可以直接設置在該入射面234或者該出射面233上。較佳地,該光學元件230由高穿透率及高熱導率材料精密加工製成,其熱導率為5W/(m•K)以上為佳。該光學元件230的厚度為1mm時,對波長為450nm之藍光的穿透率(@450nm/厚度1mm)為80%以上為佳,材料可以是高導熱玻璃、二氧化矽、藍寶石、透明陶瓷等。Referring to FIG. 17, a sixth embodiment of a laser packaging structure of the present invention discloses a laser packaging structure, which includes the bracket 200, the laser chip 220, the optical element 230 and the cover 240. The sixth embodiment is similar to the first embodiment. The difference is that the optical element 230 is a bevel with a highly reflective inclined surface, and includes an incident surface 234, a reflective surface 235, and an exit surface 233. In this embodiment, the wavelength conversion layer (not shown in the figure) can be directly disposed on the incident surface 234 or the exit surface 233. Preferably, the optical element 230 is precisely processed from a material with high transmittance and high thermal conductivity, and its thermal conductivity is preferably at least 5 W/(m·K). When the thickness of the optical element 230 is 1mm, the transmittance (@450nm/thickness 1mm) of the blue light with a wavelength of 450nm is preferably above 80%. The material can be high thermal conductivity glass, silicon dioxide, sapphire, transparent ceramics, etc. .

參閱圖18,簡單顯示了一個應用前述雷射器封裝體的光源模組。由於小角度光源更容易實現指定區域照射,故小角度雷射光源在高指向性照明或通信領域具有明顯優勢,如車頭燈、工礦燈、捕魚燈、航海燈、投影儀、雷射電視、光通信等。該光源模組包含上述的其中一種雷射器封裝結構。具體地,如圖18所示,在一矩陣陣列式光源模組300中,多顆雷射光源310a、310b、310c、310d、310e包括前述雷射器封裝結構之第一~第六實施例的其中一個,並經過電路設計可獨立控制其開關,光源出射光經過一透鏡320或一反射鏡(圖中未畫出)的光學系統處理後;在可照射範圍330a、330b、330c、330d、330e等區域內,實現在需要指定區域的照明。具體的,如車大燈應該用中,在近距離會車或遇到行人時,需要將對方行駛範圍內的遠光關閉,保證道路交通安全。本實施例提出的方案即可通過控制打開光源330b、330c,從而實現只在照明區域330b、330c中照明,既滿足自身行車照明,又可避免對方受到強光照射帶來的安全隱患。Referring to Fig. 18, a light source module using the aforementioned laser package is simply shown. Since the small angle light source is easier to illuminate the specified area, the small angle laser light source has obvious advantages in the field of high-directivity lighting or communication, such as car headlights, high bay lights, fishing lights, navigation lights, projectors, laser TVs, Optical communications, etc. The light source module includes one of the above-mentioned laser packaging structures. Specifically, as shown in FIG. 18, in a matrix array light source module 300, a plurality of laser light sources 310a, 310b, 310c, 310d, and 310e include those of the first to sixth embodiments of the aforementioned laser package structure One of them can be independently controlled by the circuit design. The light emitted by the light source is processed by the optical system of a lens 320 or a mirror (not shown in the figure); in the irradiable range 330a, 330b, 330c, 330d, 330e In other areas, realize the lighting in the designated area. Specifically, if the headlights of a car should be used, when meeting a car at a short distance or encountering a pedestrian, the high beam in the driving range of the other party needs to be turned off to ensure road traffic safety. The solution proposed in this embodiment can control to turn on the light sources 330b and 330c, so as to realize lighting only in the lighting areas 330b and 330c, which not only satisfies the own driving lighting, but also avoids the safety hazards caused by the strong light irradiation of the other party.

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification still belong to This invention patent covers the scope.

200:支架 210:支架本體 210A、210B:邊緣區域 210C、210D:邊緣區域 211:底部 2111:高部 2112:低部 2113:第一表面 C:中央區域 2114:第二表面 2115:豎直面 P5:中央區域 212:側部 213:凹槽 214:頂面 220:雷射晶片 220A:出光端面 221:引線 230:光學元件 231:側面 232:頂面 233:出射面 234:入射面 235:反射面 240:蓋板 241:金屬框架 242:波長轉換層 243:開口 250:抗靜電元件 251:引線 2600:第一電路層 260:安裝單元 261:第一區域 A、D、F、H:第一區域 262:第二區域 B、E、G、J:第二區域 263:第三區域 A’、D’、F’、H’:第三區域 270:內部電路層 271、272、273、274:電路連接單元 275、276、277、278:電路連接單元 2711、2721:起始端部 2712、2722:延伸部 2713:連接部 2714:第二延伸部 2715:末端部 A1、A2、C1:第一導電貫通件組 B1、B2:第二導電貫通件組 280:第二電路層 281:導電電極 282:散熱電極 P1、P2、P3、P4:導電電極 P6、P7、P8、P9:導電電極 d:高度差 310a、310b:雷射光源 310c、310d、310e:雷射光源 320:透鏡 330a、330b:照射範圍 330c、330d、330e:照射範圍 100:電路板 200: bracket 210: Bracket body 210A, 210B: edge area 210C, 210D: edge area 211: bottom 2111: High 2112: lower part 2113: First Surface C: Central area 2114: second surface 2115: vertical surface P5: Central area 212: Side 213: Groove 214: Top Surface 220: Laser chip 220A: Light emitting end face 221: Lead 230: optical components 231: side 232: top surface 233: exit surface 234: incident surface 235: reflective surface 240: cover 241: Metal frame 242: wavelength conversion layer 243: open 250: Antistatic component 251: Lead 2600: the first circuit layer 260: installation unit 261: The first area A, D, F, H: first area 262: The second area B, E, G, J: second area 263: Third Area A’, D’, F’, H’: third area 270: Internal circuit layer 271, 272, 273, 274: circuit connection unit 275, 276, 277, 278: circuit connection unit 2711, 2721: starting end 2712, 2722: Extension 2713: connecting part 2714: second extension 2715: End A1, A2, C1: the first conductive through-piece group B1, B2: The second conductive through-piece group 280: second circuit layer 281: Conductive electrode 282: cooling electrode P1, P2, P3, P4: conductive electrodes P6, P7, P8, P9: conductive electrodes d: height difference 310a, 310b: laser light source 310c, 310d, 310e: laser light source 320: lens 330a, 330b: irradiation range 330c, 330d, 330e: irradiation range 100: circuit board

本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一個剖視示意圖,說明本發明雷射器封裝結構的第一實施例,並省略一第一電路層及一內部電路層; 圖2是一個俯視示意圖,說明在該第一實施例的一支架上固焊一晶片; 圖3是一個示意圖,說明該第一實施例的內部電路層; 圖4是一個仰視示意圖,說明該第一實施例的一第二電路層; 圖5是一個剖視示意圖,說明該第一實施例與一PCB基板連接的結構; 圖6是一個俯視示意圖,說明本發明雷射器封裝結構的一第二實施例; 圖7是一仰視示意圖,說明該第二實施例的第二電路層; 圖8是一個示意圖,說明該第二實施例的內部電路層; 圖9是一俯視示意圖,說明本發明雷射器封裝結構之一第三實施例; 圖10是一個示意圖,說明該第三實施例的內部電路層; 圖11是一俯視示意圖,說明本發明雷射器封裝結構之一第四實施例; 圖12是一個示意圖,說明該第四實施例的內部電路層; 圖13是一個剖視示意圖,說明本發明雷射器封裝結構之一第五實施例; 圖14是一俯視示意圖,說明該第5實施例的一波長轉換層及一金屬框架; 圖15是圖14的另一變化態樣; 圖16是一剖視示意圖,說明該第五實施例的又一個變化態樣; 圖17是一剖視示意圖,說明本發明雷射器封裝結構之一第六實施例;及 圖18是一個示意圖,說明包括本發明雷射器封裝結構的一光源模組。Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: 1 is a schematic cross-sectional view illustrating the first embodiment of the laser packaging structure of the present invention, and a first circuit layer and an internal circuit layer are omitted; FIG. 2 is a schematic top view illustrating the solid bonding of a chip on a support of the first embodiment; Figure 3 is a schematic diagram illustrating the internal circuit layers of the first embodiment; 4 is a schematic bottom view illustrating a second circuit layer of the first embodiment; FIG. 5 is a schematic cross-sectional view illustrating the connection structure of the first embodiment and a PCB substrate; 6 is a schematic top view illustrating a second embodiment of the laser packaging structure of the present invention; FIG. 7 is a schematic bottom view illustrating the second circuit layer of the second embodiment; FIG. 8 is a schematic diagram illustrating the internal circuit layer of the second embodiment; 9 is a schematic top view illustrating a third embodiment of the laser packaging structure of the present invention; FIG. 10 is a schematic diagram illustrating the internal circuit layer of the third embodiment; 11 is a schematic top view illustrating a fourth embodiment of the laser packaging structure of the present invention; FIG. 12 is a schematic diagram illustrating the internal circuit layer of the fourth embodiment; 13 is a schematic cross-sectional view illustrating a fifth embodiment of the laser packaging structure of the present invention; 14 is a schematic top view illustrating a wavelength conversion layer and a metal frame of the fifth embodiment; Figure 15 is another variation of Figure 14; Figure 16 is a schematic cross-sectional view illustrating yet another modification of the fifth embodiment; 17 is a schematic cross-sectional view illustrating a sixth embodiment of the laser package structure of the present invention; and 18 is a schematic diagram illustrating a light source module including the laser package structure of the present invention.

200:支架 200: bracket

210:支架本體 210: Bracket body

211:底部 211: bottom

2111:高部 2111: High

2112:低部 2112: lower part

2113:第一表面 2113: First Surface

2114:第二表面 2114: second surface

2115:豎直面 2115: vertical surface

212:側部 212: Side

213:凹槽 213: Groove

214:頂面 214: Top Surface

220:雷射晶片 220: Laser chip

220A:出光端面 220A: Light emitting end face

230:光學元件 230: optical components

231:側面 231: side

232:頂面 232: top surface

280:第二電路層 280: second circuit layer

281:導電電極 281: Conductive electrode

282:散熱電極 282: cooling electrode

d:高度差 d: height difference

Claims (34)

一種雷射器封裝結構,包含: 一支架,包括一具有相反的一第一表面及一第二表面的支架本體、一位於該支架本體之第一表面的第一電路層、一位於該支架本體之第二表面的第二電路層,及一嵌入該支架本體中的內部電路層,所述內部電路層具有多個電路連接單元,每個電路連接單元具有一電路塊、一連接該電路塊與該第一電路層的第一導電貫通件組(via),以及一連接該電路塊與該第二電路層的第二導電貫通件組;及 一至少一雷射晶片,固定於該支架的第一電路層上,可發射一雷射光束。A laser packaging structure, including: A bracket includes a bracket body having opposite first and second surfaces, a first circuit layer on the first surface of the bracket body, and a second circuit layer on the second surface of the bracket body , And an internal circuit layer embedded in the bracket body, the internal circuit layer has a plurality of circuit connection units, each circuit connection unit has a circuit block, a first conductive circuit connecting the circuit block and the first circuit layer A group of through components (via), and a second group of conductive through components connecting the circuit block and the second circuit layer; and At least one laser chip is fixed on the first circuit layer of the bracket and can emit a laser beam. 如請求項1所述的雷射器封裝結構,其中,所述支架的內部電路層包括四個以上的電路連接單元。The laser packaging structure according to claim 1, wherein the internal circuit layer of the bracket includes more than four circuit connection units. 如請求項1所述的雷射器封裝結構,其中,所述內部電路層的該等電路連接單元區分為至少一個第一電路連接單元和至少一個第二電路連接單元。The laser packaging structure according to claim 1, wherein the circuit connection units of the internal circuit layer are divided into at least one first circuit connection unit and at least one second circuit connection unit. 如請求項3所述的雷射器封裝結構,其中,所述內部電路層的該等電路連接單元區分為多個該第一電路連接單元和多個該第二電路連接單元,所述第一電路層包含兩個以上的安裝單元,該雷射器封裝結構包含二個該雷射晶片,每一安裝單元包括相互間隔且可導電的一第一區域和一第二區域,每一雷射晶片設置於其中一個安裝單元的第一區域上,所述第一區域與所述內部電路層的所述第一電路連接單元形成電性連接,所述第二區域與所述內部電路層的所述第二電路連接單元形成電路連接。The laser package structure according to claim 3, wherein the circuit connection units of the internal circuit layer are divided into a plurality of the first circuit connection units and a plurality of the second circuit connection units, the first The circuit layer includes more than two mounting units, the laser package structure includes two laser chips, each mounting unit includes a first area and a second area spaced apart and conductive, and each laser chip Is disposed on the first area of one of the mounting units, the first area is electrically connected to the first circuit connection unit of the internal circuit layer, and the second area is electrically connected to the first circuit connection unit of the internal circuit layer. The second circuit connection unit forms a circuit connection. 如請求項4所述的雷射器封裝結構,其中,所述正面電路層的安裝單元對應於所述內部電路層的第一電路連接單元和第二電路連接單元。The laser package structure according to claim 4, wherein the mounting unit of the front circuit layer corresponds to the first circuit connection unit and the second circuit connection unit of the internal circuit layer. 如請求項4所述的雷射器封裝結構,其中,所述第一電路層的每一安裝單元還具有一與該第一區域及該第二區域間隔的第三區域,每一第一電路連接單元具有兩組以上的第一導電貫通件組,分別連接至所述第一電路層的第一區域及第三區域。The laser package structure according to claim 4, wherein each mounting unit of the first circuit layer further has a third area separated from the first area and the second area, and each first circuit The connection unit has more than two groups of first conductive through-pieces, which are respectively connected to the first area and the third area of the first circuit layer. 如請求項6所述的雷射器封裝結構,其中每一安裝單元的所述第一區域通過第一電路連接單元的第一導電貫通件組與所述第三區域形成電性連接,所述第二區域與所述內部電路層的其中一個第二電路連接單元形成電性連接。The laser packaging structure according to claim 6, wherein the first area of each mounting unit is electrically connected to the third area through the first conductive through-piece group of the first circuit connection unit, and The second area is electrically connected to one of the second circuit connection units of the internal circuit layer. 如請求項7所述的雷射器封裝結構,其中,在每一安裝單元中,所述第一區域的面積大於所述第二區域和第三區域兩者的總面積。The laser package structure according to claim 7, wherein, in each mounting unit, the area of the first area is greater than the total area of both the second area and the third area. 如請求項1所述的雷射器封裝結構,其中,所述內部電路層的每一電路連接單元的電路塊具有一鄰近該支架本體之一側的一個起始端部,該電路連接單元的第二導電貫通件組連接於該電路塊之起始端部,所述第一導電貫通件組連接於該電路塊之遠離該支架本體之該側的另一端部。The laser package structure according to claim 1, wherein the circuit block of each circuit connection unit of the internal circuit layer has a start end adjacent to one side of the bracket body, and the first end of the circuit connection unit Two conductive through element groups are connected to the starting end of the circuit block, and the first conductive through element group is connected to the other end of the circuit block on the side away from the bracket body. 如請求項9所述的雷射器封裝結構,其中,所述支架的第二電路層包括多個設置於該支架本體之第二表面的導電電極,該等導電電極位於該第二表面的邊緣區域。The laser package structure according to claim 9, wherein the second circuit layer of the bracket includes a plurality of conductive electrodes disposed on the second surface of the bracket body, and the conductive electrodes are located at the edge of the second surface area. 如請求項10所述的雷射器封裝結構,其中,所述支架的第二電路層還包括一個散熱電極,該散熱電極位於所述支架本體的第二表面的中央區域。The laser packaging structure according to claim 10, wherein the second circuit layer of the bracket further includes a heat dissipation electrode located in the central area of the second surface of the bracket body. 如請求項11所述的雷射器封裝結構,其中,所述第二電路層的導電電極位於所述散熱電極的兩相反側,且與該散熱電極間隔。The laser package structure according to claim 11, wherein the conductive electrodes of the second circuit layer are located on two opposite sides of the heat dissipation electrode and are spaced apart from the heat dissipation electrode. 如請求項10所述的雷射器封裝結構,其中,每個雷射晶片連接於所述內部電路層的其中一個第一電路連接單元,和所述第二電路層的其中兩個導電電極。The laser package structure according to claim 10, wherein each laser chip is connected to one of the first circuit connection units of the internal circuit layer and two of the conductive electrodes of the second circuit layer. 如請求項1所述的雷射器封裝結構,還包含一光學元件,該光學元件設置在所述支架本體的第一表面上,並對所述雷射晶片發出的一平行於該支架的第一表面的水平方向的光進行光反射而變成一垂直於該第一表面的垂直方向的光射出。The laser package structure according to claim 1, further comprising an optical element disposed on the first surface of the holder body and responding to the laser chip emitting a second parallel to the holder The light in the horizontal direction of a surface undergoes light reflection and becomes a light emission in the vertical direction perpendicular to the first surface. 如請求項14所述的雷射器封裝結構,其中所述光學元件位於所述支架本體的第一表面的中央區域,所述雷射晶片圍繞所述光學元件。The laser package structure according to claim 14, wherein the optical element is located in a central area of the first surface of the holder body, and the laser chip surrounds the optical element. 如請求項14所述的雷射器封裝結構,其中,所述內部電路層的電路連接單元投影至該支架本體之第一表面的位置位於所述光學元件的位置的外周。The laser package structure according to claim 14, wherein the position where the circuit connection unit of the internal circuit layer is projected onto the first surface of the bracket body is located on the outer periphery of the position of the optical element. 如請求項1所述的雷射器封裝結構,其中,所述第二導電貫通件組投影至該支架本體之第一表面的位置位於所述第一表面的邊緣區域。The laser package structure according to claim 1, wherein the projected position of the second conductive through member group onto the first surface of the bracket body is located at an edge area of the first surface. 如請求項1所述的雷射器封裝結構,其中,所述支架本體具有三個以上連接該第一表面與該第二表面的側面,該內部電路層的每一電路連接單元的電路塊具有一起始端部和一延伸部,該起始端部鄰近所述支架本體的其中一個側面,該延伸部自該起始端部朝向所述支架的其他側面延伸。The laser packaging structure according to claim 1, wherein the bracket body has three or more side surfaces connecting the first surface and the second surface, and the circuit block of each circuit connection unit of the internal circuit layer has A starting end and an extension, the starting end is adjacent to one of the side surfaces of the bracket body, and the extension is extending from the starting end toward the other side of the bracket. 如請求項1所述的雷射器封裝結構,其中,所述支架形成有一凹槽,該凹槽平行於該支架本體的第一表面的橫截面呈矩形,所述雷射晶片位於該凹槽,並鄰近該矩形的其中一條對角線或位於該對角線上。The laser package structure according to claim 1, wherein the bracket is formed with a groove, and the groove is rectangular in cross section parallel to the first surface of the bracket body, and the laser chip is located in the groove , And adjacent to or located on one of the diagonals of the rectangle. 一種雷射器封裝結構,包含 一支架,包括一具有相反的一第一表面及一第二表面的支架本體、一位於該支架本體的第一表面的第一電路層、一位於該支架本體的第二表面的第二電路層,及一嵌入該支架本體內的內部電路層,所述第一電路層包含至少兩個安裝單元,每一安裝單元包括相互間隔的一第一區域及一第二區域,所述內部電路層具有多個電路連接單元,每個電路連接單元具有一電路塊、一連接該電路塊與該第一電路層的第一導電貫通件組,及一連接該電路塊與該第二電路層的第二導電貫通件組;及 至少兩個雷射晶片,分別安裝於該支架的第一電路層的各個安裝單元的第一區域,可發射一雷射光束。A laser packaging structure, including A bracket includes a bracket body with opposite first and second surfaces, a first circuit layer on the first surface of the bracket body, and a second circuit layer on the second surface of the bracket body , And an internal circuit layer embedded in the bracket body, the first circuit layer includes at least two mounting units, each mounting unit includes a first area and a second area spaced apart from each other, the internal circuit layer has A plurality of circuit connection units, each circuit connection unit having a circuit block, a first conductive through-piece group connecting the circuit block and the first circuit layer, and a second circuit block connecting the circuit block and the second circuit layer Group of conductive through-pieces; and At least two laser chips are respectively mounted on the first area of each mounting unit of the first circuit layer of the bracket and can emit a laser beam. 如請求項20所述的雷射器封裝結構,其中,至少一個所述安裝單元還包括一與該第一、第二區域間隔的第三區域,所述第三區域通過所述內部電路層與所述第一區域形成電性連接;該雷射器封裝結構還包含至少一個抗靜電元件,該至少一抗靜電元件安裝於該第三區域。The laser package structure according to claim 20, wherein at least one of the mounting units further includes a third area separated from the first and second areas, and the third area is connected to the inner circuit layer through the internal circuit layer. The first area forms an electrical connection; the laser package structure further includes at least one antistatic element, and the at least one antistatic element is installed in the third area. 如請求項21所述的雷射器封裝結構,其中,所述電路連接單元區分為多個第一電路連接單元,及多個第二電路連接單元,每一第一電路連接單元具有兩組以上的第一導電貫通件組,所述第一區域通過一組第一導電貫通件組與所述第一電路連接單元的電路塊連接,所述第三區域通過另一組第一導電貫通件組與所述第一電路連接單元的電路塊連接,使得該第一區域通過所述第一電路連接單元與所述第三區域形成電性連接。The laser package structure according to claim 21, wherein the circuit connection unit is divided into a plurality of first circuit connection units and a plurality of second circuit connection units, and each first circuit connection unit has more than two groups The first conductive through element group, the first area is connected to the circuit block of the first circuit connection unit through a group of first conductive through element groups, and the third area is connected through another group of first conductive through element groups It is connected to the circuit block of the first circuit connection unit, so that the first area is electrically connected to the third area through the first circuit connection unit. 如請求項21所述的雷射器封裝結構,其中,所述第二導電貫通件組連接於所述電路塊之鄰近該支架本體之一側的一個起始端部,所述第一導電貫通件組連接於所述電路塊遠離該支架本體之該側的另一起始端部。The laser package structure according to claim 21, wherein the second conductive through member group is connected to a starting end of the circuit block adjacent to one side of the bracket body, and the first conductive through member The group is connected to the other starting end of the side of the circuit block away from the bracket body. 如請求項21所述的雷射器封裝結構,其中,所述內部電路層包含四個以上的電路連接單元。The laser packaging structure according to claim 21, wherein the internal circuit layer includes more than four circuit connection units. 如請求項22所述的雷射器封裝結構,其中,所述第一電路層的各個安裝單元的第二區域分別與所述內部電路層的第二電路連接單元形成電性連接。The laser package structure according to claim 22, wherein the second regions of the respective mounting units of the first circuit layer are electrically connected to the second circuit connection units of the internal circuit layer. 如請求項25所述的雷射器封裝結構,其中,所述第一電路層的所述安裝單元的其中一個對應於所述內部電路層的其中一個所述第一電路連接單元和其中一個所述第二電路連接單元。The laser package structure according to claim 25, wherein one of the mounting units of the first circuit layer corresponds to one of the first circuit connection units and one of the internal circuit layers. The second circuit connection unit. 如請求項23所述的雷射器封裝結構,其中,所述第二電路層包括多個設置於該支架本體之第二表面的導電電極,該等導電電極位於該第二表面的邊緣區域。The laser package structure according to claim 23, wherein the second circuit layer includes a plurality of conductive electrodes disposed on the second surface of the bracket body, and the conductive electrodes are located at the edge area of the second surface. 如請求項27所述的雷射器封裝結構,其中,所述支架的第二電路層還包括一個散熱電極,該散熱電極位於所述支架本體的第二表面的中央區域。The laser packaging structure according to claim 27, wherein the second circuit layer of the bracket further includes a heat dissipation electrode located in the central area of the second surface of the bracket body. 如請求項28所述的雷射器封裝結構,其中,所述第二電路層的導電電極位於所述散熱電極的兩相反側,且與該散熱電極間隔。The laser package structure according to claim 28, wherein the conductive electrodes of the second circuit layer are located on two opposite sides of the heat dissipation electrode and are spaced apart from the heat dissipation electrode. 如請求項28所述的雷射器封裝結構,其中,每個所述雷射晶片連接於所述內部電路層的兩個電路連接單元,並連接於所述第二電路層的其中兩個導電電極。The laser package structure according to claim 28, wherein each of the laser chips is connected to two circuit connection units of the internal circuit layer, and is connected to two of the conductive circuits of the second circuit layer. electrode. 如請求項21所述的雷射器封裝結構,其中,所述電路連接單元的第二導電貫通件組投影至該支架本體之第一表面的位置位於所述第一表面的邊緣區域。The laser package structure according to claim 21, wherein the position where the second conductive through member group of the circuit connection unit is projected onto the first surface of the bracket body is located at the edge area of the first surface. 如請求項21所述的雷射器封裝結構,其中,所述支架本體具有三個以上連接該第一表面與該第二表面的側面,該內部電路層的每一電路連接單元的電路塊具有一起始端部和一延伸部,該起始端部鄰近所述支架本體的其中一個側面,該延伸部自該起始端部朝向另一個其他側面延伸。The laser package structure according to claim 21, wherein the bracket body has three or more side surfaces connecting the first surface and the second surface, and the circuit block of each circuit connection unit of the internal circuit layer has A starting end and an extension, the starting end is adjacent to one of the side surfaces of the bracket body, and the extension is extending from the starting end to the other side. 如請求項21所述的雷射器封裝結構,其中,所述支架形成有一凹槽,該凹槽平行於該支架本體之第一表面的橫截面呈矩形,所述雷射晶片位於該凹槽,並鄰近該矩形的其中一條對角線或位於該對角線上。The laser package structure according to claim 21, wherein the bracket is formed with a groove, and the groove parallel to the first surface of the bracket body is rectangular in cross section, and the laser chip is located in the groove , And adjacent to or located on one of the diagonals of the rectangle. 一種光源模組,包含如請求項1~33所述的其中一種雷射器封裝結構。A light source module including one of the laser packaging structures described in claim items 1 to 33.
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