CN209487933U - A kind of individual laser package structure - Google Patents

A kind of individual laser package structure Download PDF

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Publication number
CN209487933U
CN209487933U CN201822249361.6U CN201822249361U CN209487933U CN 209487933 U CN209487933 U CN 209487933U CN 201822249361 U CN201822249361 U CN 201822249361U CN 209487933 U CN209487933 U CN 209487933U
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China
Prior art keywords
bracket
circuit
package structure
structure according
individual laser
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CN201822249361.6U
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Chinese (zh)
Inventor
陈辉
时军朋
廖启维
黄永特
徐宸科
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Quanzhou Sanan Semiconductor Technology Co Ltd
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Quanzhou Sanan Semiconductor Technology Co Ltd
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Priority to CN201822249361.6U priority Critical patent/CN209487933U/en
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Abstract

The utility model discloses a kind of individual laser package structure, including bracket, has bowl structure;Laser chip is installed in the bowl of the bracket, can emit a first laser light beam;Optical element has inclined reflecting surface and a top surface platform structure, and the size of the platform is 0.5 mm × 0.5mm or more, is used for nozzle pick element in encapsulation procedure.

Description

A kind of individual laser package structure
Technical field
The utility model relates to field of lasers, in particular to a kind of encapsulating structure of superpower laser.
Background technique
Since semiconductor laser (LD) has, monochromaticjty is good, small in size, the service life is long, high power density and high speed operation Excellent characteristics, semiconductor laser is in laser ranging, laser radar, laser communication, laser analog weapon, automatic control, detection Instrument even medical and beauty treatment etc. has been obtained for being widely applied, and forms wide market.
Utility model content
Under trend of the laser application to high power development, it is proposed that a kind of encapsulation knot of high power laser light application Structure.
A kind of individual laser package structure, including bracket have bowl structure;Laser chip is installed on the bowl of the bracket It is interior, a first laser light beam can be emitted;Optical element is installed in the bowl of the bracket, has inclined reflecting surface and platform The size of structure, the platform is 0.5 mm × 0.5mm or more, is used for nozzle pick element in encapsulation procedure.
In some embodiments, the bowl is equipped with step, and the laser chip is installed on the eminence of the step, the light Learn the lower that element is installed on step.Preferably, the difference of height of the step is 0.1 ~ 0.5mm.
In some embodiments, the bracket includes positioned at the positive front-side circuit layer of the bracket, is located at the cradle back Back-side circuit layer and interior circuit layers positioned at the internal stent, the interior circuit layers have plurality of circuits connection single Member, each circuit connection unit have the first connection through-hole and the second connection through-hole, wherein the first connection through-hole be connected to it is described Front-side circuit layer, the second connection through-hole are connected to back-side circuit layer.
Preferably, the front-side circuit layer include more than two device installation units, the installation unit include mutually every From first area, second area;At least two laser chip is respectively arranged in each of the front-side circuit layer of the bracket The first area of a installation unit.
Preferably, the interior circuit layers include the first circuit connection unit and second circuit connection unit, wherein first Circuit connection unit and the first area of the front-side circuit layer are electrically connected, second circuit connection unit and the front The second area of circuit layer forms circuit connection.
Preferably, an installation unit of the front-side circuit layer corresponds to first circuit of the interior circuit layers Connection unit and a second circuit connection unit.
Preferably, the second connection through-hole is located at the fringe region of the bracket.
Preferably, each circuit connection unit of the interior circuit layers is located at the outer of the corresponding position of the optical element Week.
In some embodiments, further include a cover board, the top of bracket is set, for sealing the member in the bracket bowl Part.
In some embodiments, which includes wavelength conversion layer, and thermal conductivity is greater than 10W/m K.
In some embodiments, which includes metal framework and wavelength conversion layer, which is set to the top of bracket Portion, the wavelength conversion layer are fixed by the metal framework.The interior circuit layers include more than four circuit connection units.
Other features and advantages of the utility model will illustrate in the following description, also, partly from specification In become apparent, or understood and implementing the utility model.The purpose of this utility model and other advantages can pass through Specifically noted structure is achieved and obtained in the specification, claims and drawings.
Detailed description of the invention
Attached drawing is used to provide a further understanding of the present invention, and constitutes part of specification, practical with this Novel embodiment is used to explain the utility model together, does not constitute limitations of the present invention.In addition, attached drawing data are Summary is described, is not drawn to scale.
Fig. 1 is a diagrammatic cross-section, illustrates the first embodiment of the utility model.
Fig. 2 is a schematic diagram, illustrates the front elevation on the bracket of the utility model first embodiment after solid core wire piece.
Fig. 3 is a schematic diagram, illustrates the interior circuit layers distribution of the utility model first embodiment.
Fig. 4 is a schematic diagram, the back-side circuit layer distribution of the utility model first embodiment.
Fig. 5 is a section display figure, illustrates the structure that the packaging body of the utility model embodiment is connect with PCB substrate.
Fig. 6 is a front view, illustrates the encapsulating structure of the utility model second embodiment.
Fig. 7 is a schematic diagram, illustrates the back-side circuit layer distribution of the utility model second embodiment.
Fig. 8 is a schematic diagram, the interior circuit layers distribution of the utility model second embodiment.
Fig. 9 is a front view, illustrates the encapsulating structure of the utility model 3rd embodiment.
Figure 10 is a schematic diagram, the interior circuit layers distribution of the utility model 3rd embodiment.
Figure 11 is a front view, illustrates the encapsulating structure of the utility model fourth embodiment.
Figure 12 is a schematic diagram, the interior circuit layers distribution of the utility model fourth embodiment.
Figure 13 is a diagrammatic cross-section, illustrates the 5th embodiment of the utility model.
Figure 14 is a front view, the wavelength conversion layer of encapsulating structure shown in explanatory diagram 13.
Figure 15 is a front view, another wavelength conversion layer structure of encapsulating structure shown in explanatory diagram 13.
Figure 16 is a diagrammatic cross-section, illustrates a deformation of the 5th embodiment of the utility model.
Figure 17 is a diagrammatic cross-section, illustrates the sixth embodiment of the utility model.
Figure 18 is a schematic diagram, illustrates the light source module group of the encapsulating structure using the utility model.
Wherein, the reference numerals are as follows:
100:PCB circuit board;The matrix of 110:PCB circuit board;111: radiating boss;121: welding layer;122: circuit layer; 123: welding resistance paint;124: insulating layer;210: bracket;210A ~ 210D: the edge of bracket;211: the bottom of bracket;2111: bracket The lower curtate of bottom;2112: the high portion of frame bottom;212: the side of bracket;213: cavity;220: laser chip;220A: laser Chip light-emitting end face;230: optical element;231: reflecting surface;232: optical element top surface;240: cover board;241: metal framework; 242: wavelength convert;260: the positive installation unit of bracket;261: first area;262: second area;263: third region; 270: internal electric layer layer;271,273,275,277: the first circuit connection unit;The starting point of 2711: the first circuit connection units Portion;The extension of 2712: the first circuit connection units;272,274,276,278: second circuit connection unit;2721: the second The starting ends of circuit connection unit;Issue the extension of circuit connection unit at 2722: the;300: applying light source module group;310: Laser light source encapsulation;320: module lens;330: illumination region range;A1, A2, C1: first through hole;B1, B2: the second through-hole.
Specific embodiment
It is described in detail, is being further described below with reference to individual laser package structure of the schematic diagram to the utility model Before the utility model, it should be understood that due to that can be transformed to specific embodiment, the utility model is simultaneously unlimited In following specific embodiments.It is also understood that since the scope of the utility model is only defined by the following claims, institute The embodiment of use is introductory, rather than restrictive.
Following embodiments discloses a kind of package body structure comprising multiple laser chips, the packaging body include bracket and The laser chip being installed on the bracket.Further, which includes positioned at the positive front-side circuit layer of the bracket, is located at and is somebody's turn to do The back-side circuit layer of cradle back and interior circuit layers positioned at the internal stent, wherein front-side circuit layer includes more than two Device installation unit, the installation unit include mutually isolated first area, second area, and interior circuit layers have a plurality of electricity Road connection unit, each circuit connection unit have the first connection through-hole and the second connection through-hole, wherein the first connection through-hole connects It is connected to the front-side circuit layer, the second connection through-hole is connected to the back-side circuit layer, and more than two laser chips are pacified respectively The first area of each installation unit of front-side circuit layer loaded on the bracket.
Embodiment 1
As shown in Figure 1, the present embodiment discloses a kind of laser package comprising bracket 210, laser chip 220, optics Element 230 and cover board 240.
Wherein, bracket 210 uses bowl bracket, is made of bottom 211 and side 212, and constructs a cavity 213.? In the present embodiment, preferably, bottom 211 in step-like, be divided into high portion 2111 and lower curtate 2112,.Bracket in the present embodiment 210 preferably use ceramics bracket, such as Al2O3, the materials such as AlN, which is provided with circuit.Laser chip 220 is placed horizontally at 210 Bottom surface on, be preferably set up directly on the high portion surface 2111 of bottom, the low of frame bottom is arranged in optical element 230 On 2112 surface of portion.
In the present embodiment, the ceramic substrate of high heat conductance can be used as bracket 210 in packaging body, and bracket is provided with bowl Cup and multilayer platform structure, podium level difference D is preferably 0.1 ~ 0.5mm, such as can be 0.1 ~ 0.3mm.220 water of LD chip Lay flat and be placed in compared in high platform, optical element 230(has high reverse slope 231) it is placed in compared with low platform, LD chip 220 is issued Horizontal direction light reflection after be converted into vertical direction light outgoing, promoted normal direction light extraction efficiency while conducive to device optics Design.Preferably, the light output end 220A of LD chip 220 is at least concordant with bracket step vertical plane 2113, and more preferably, LD chip Light output end 220A protrude from step, prevent diverging outgoing beam be irradiated on the die bond platform of bracket.
Preferably implement in pattern at one, optical element 230 preferably has an inclined side 231 and a top surface 232, upper surface 232 has one for the platform that nozzle pick element uses in encapsulation procedure, this preferred platform area is greater than 0.5×0.5mm2.Further, high reflectance coating being made in the side of optical element 230 231 and forming reflecting surface, material can Think the metallic reflectors such as Ag, Al, Au or SiO2、TiO2、MgF2、Al2O3Equal oxide dielectric films reflecting layer.Reflecting surface number Amount can be several, and the shape or angle of different reflectings surface can be different.It, can be according to difference in multiple reflecting mirrors Application demand adjusts reflecting face and controls the overlapping degree that multiple chips go out light hot spot, realizes the light source of different light emitting angers.
The top 214 of bracket 210 is arranged in cover board 240, for all elements in sealed support bowl.Cover board 240 with Packaging body can be made to seal by the way of silica gel or Au-Sn eutectic between the bowl of bracket.240 material of cover board can be Bright glass, quartz, sapphire, crystalline ceramics etc. can also use wavelength convert block materials according to different photochromic demands.It answers The explanation, it is not limited to each element on bracket is sealed using cover board, some embodiments can also be by silicone filler In covering all elements on bracket 210, with all elements on protective cradle 210.
Preferably, which includes positive circuit layer, back-side circuit layer 280 and is layed in the interior of internal stent Portion's circuit layer 270, Fig. 2 is shown welds the front elevation after LD chip 220 admittedly on the bracket 210, and Fig. 3 shows interior circuit layers 270 distribution map, as Fig. 4 shows the distribution map of the back-side circuit layer 280 of bracket.2-4 is to front-side circuit with reference to the accompanying drawing Connection relationship between layer, interior circuit layers and back-side circuit layer carries out detailed.
As shown in Fig. 2, there are four edge 210A ~ 210D for the Facad structure tool of bracket 210, the intermediate C block in front is for putting Optical element 230 is set, outside region is component mount region, is divided into more than two installation units 260, the installation list Member includes first area 261, second area 262 and third region 263, which is isolated from each other, and surface is coated with conduction Material, wherein first area 261 and third region 263 are used as first electrode block, and second area 262 is used as second electrode area Block.As shown in figure 3, the interior circuit layers 270 include a series of circuit connection unit 271 ~ 274, each circuit connection unit It include the end positioned at 210 edge of bracket, the extension of the internal stretch to bracket, positioned at the first through hole of extension A1/A2/C2(diagram is illustrated with the circle of filled black) and the second through-hole B1/B2(diagram white filling positioned at the end Circle signal), wherein first through hole A1/A2/C2 is connect with front electrode block, the second through-hole B1/B2 and rear electrode area Block 281 connects.Further, circuit connection unit can be divided into the first circuit connection unit 271/273 and connect with second circuit Unit 272/274, a positive installation unit 260 correspond to a first circuit connection unit 271 of intermediate circuit layer 270 With a second circuit connection unit 272.271 and 273 be the first circuit connection unit in the present embodiment, including two group first Through-hole (A1, C1), one group of second through-hole B1, wherein A1 is connected to positive first area 261, and C1 is connected to positive third area Domain 263, B1 are connected to the electrode block 281 at the back side;272 and 274 be second circuit connection unit, including one group of first through hole A2 With one group of second through-hole B2, wherein A2 is connected to positive second area 262, and B2 is connected to the electrode block 281 at the back side, thus Realize the connection of front and back electrode block.Preferably, each circuit connection unit has positioned at an edge of bracket 210 The extension that starting ends and another edge towards bracket extend, wherein first through hole A1, A2, C1 is located at extension On, second through-hole B1, B2 is located on starting ends, and rear electrode block 281 can be so all set in the edge of bracket 210 Region, as shown in figure 4, convenient be arranged heat sink electrodes 282 in intermediate region P3.Further, in the first circuit connection unit, Through-hole A1 is arranged compared to through-hole C1 closer to the second through-hole, such as through-hole C1 may be provided at the separate position of extension.Tool Body, the end 2711 of the first circuit connection unit 271 is located at the edge 210A of bracket 210, and extension 2712 is towards bracket The direction of edge 210C extends, and B1 ends 2711 of through-hole, through-hole A1 is located at the position by close end of extension 2712, through-hole C1 is located at the tail end of extension 2712;The end 2721 of second circuit connection unit 272 is located at the edge 210C of bracket 210, prolongs The direction of extending portion 2722 towards the edge 210A of bracket extend, and B2 ends 2721 of through-hole, through-hole A2 is located at extension 2712 Tail end.First circuit connection unit 271 and second circuit connection unit 272 are located at the left area of bracket, constitute first group of electricity Road connection unit, corresponding to the left side installation unit 260 of front-side circuit layer, the first circuit connection unit 273 and second circuit connect Order member 274 is located at the right area of bracket, constitutes second group of circuit connection unit, and the right side corresponding to front-side circuit layer is installed Unit.
In the present embodiment, first installation unit 260, D, E and D are constituted in the front surface A of bracket 210, B and A ' block ' Second installation unit is constituted, wherein A and D block is first area, places a LD chip 220 respectively, connects by lead 221 It is connected to second area B/E, A ', D ' block are third region, place an ESD protection device 250 respectively, connect by lead 251 It is connected to second area B/E, the intermediate C block in front places optical element 230, and electrode block A-A ', D-D ' pass through interior circuit layers Connection, the connection of front and back electrode block are as follows: A/A ' is connect with P5, and B is connect with P2, and D/D ' is connect with P4, and E is connect with P1.Light Learning element 230 can be reflecting element or prism element with high reverse slope, by the horizontal direction emergent light of LD chip 220 It is converted into vertical direction.
In the package body structure of the present embodiment, by the circuit structure design to bracket, it can be carried out in packaging body single Or multiple chips (configuration ESD protection device) encapsulation, and multiple chips encapsulation can its switch of independent control according to demand, Realize that brightness is adjustable.
Further, heat dissipation block 282 can be set in the back side P3 block of bracket 210, thermoelectricity separation is realized, wherein carrying on the back Route that face electrode block is laid with by bosom layer, through-hole are connected with front electrode block, back side intermediate radiator block P3 It is directly connected to rear end PCB circuit board or heat sink metallic matrix, as shown in figure 5, being conducive to packaging body rapid cooling.
Further, one it is specific implement in pattern, which can be wavelength conversion material, such as can be with Using glass flourescent sheet, ceramic fluorescent piece, monocrystalline flourescent sheet etc., this material thermal conductivity is greater than 10W/mK.Preferably, by wave Light emitting anger is less than 90 ° after long transition material, and the luminous intensity of normal direction is maximum.Since there are Stokes in wavelength-conversion process The factor of offset phenomena and wavelength conversion material efficiency can generate certain heat, the cup and bowl wall 212 of high heat conductance at the same time as The heat dissipation channel of wavelength conversion material, the heat derives that wavelength-conversion process is generated.Preferably, the cover board 240 and bracket 210 Between use the combination of high thermal conductivity, to realize good heat dissipation, mode includes SAB(Surface Activated Bonding), the modes such as ADB (Atomic Diffusion Bonding), also can be used height between the cover board 240 and bracket 210 The transparent material of thermal conductivity bonds, and thermal conductivity is that 1W/ (m K) or more is preferred.
Embodiment 2
Fig. 6 ~ 8 show second embodiment of the utility model.Wherein Fig. 6 is shown welds LD core admittedly on the bracket 210 Front elevation after piece 220;The distribution of back-side circuit layer is as shown in fig. 7, the distribution of interior circuit layers 270 such as Fig. 8 shows.Specifically, just In the circuit layer of face, A, B and A ' block are the first installation unit, and C, D and C ' block are the second installation unit, and H, J and H ' block are Third installation unit, F, G and F ' block are the 4th installation unit;Interior circuit layers 270 have eight circuit connection units, wherein 271,273,275 and 277 be the first circuit connection unit, and 272,274,276 and 278 be second circuit connection unit.Further Ground, 271 and 272 first group of circuit connection unit of composition, with A, B and A ' block are connect, and 273 and 274, which constitute second group of circuit, connects Order member, with C, D and C ' block is connect, and 275 and 276 composition third group circuit connection units, with H, J and H ' block is connect, and 277 The 4th group of circuit connection units being constituted with 278, with F, G and F ' block connect.
The bracket 210 of the packaging body can place four LD chips 220, be respectively placed in A, C, F and H block, ESD protection member Part 250 is placed in A ', C ', F ', H ' block, and electrode block A-A ', C-C ', F-F ', H-H ' pass through circuit layer inside bracket 210 270 connections.Each electrode block connection in positive and negative is as follows: A/A ' is connect with P4, and B is connect with P3, and C/C ' is connect with P1, and D and P2 connect It connects, F/F ' is connect with P9, and G is connect with P8, and H/H ' is connect with P6, and J is connect with P7.P5 block is heat dissipation block among the back side;Just E block places optical element 230 among face, is converted into vertical direction to the horizontal direction emergent light of chip and propagates.
Embodiment 3
Fig. 9 ~ 10 show the third embodiment of the utility model.Wherein Fig. 9 is shown welds LD core admittedly on the bracket 210 Front elevation after piece 220, the distribution of interior circuit layers 270 such as Figure 10 show that wherein the distribution of back-side circuit layer is according to shown in ginseng Fig. 7.
It is different from second embodiment, in the present embodiment diagonally opposing corner of the optical element 230 of package body structure along bowl Line is placed, and four installation units is arranged in four corners of bowl, each installation unit includes first area 261 and second area 262, wherein LD chip 220 is installed on first area 261, and as close to bowl incline diagonal line or be located at clinodiagonal On.The interior circuit layers 270 as shown in Figure 10, have a series of circuit connection unit of upper and lower fringe regions positioned at bracket, Each circuit connection unit is in block structure, wherein the edge of the second through-hole B1 near bracket, it is logical that first through hole A1 is located at second The connection of the inside of hole B1, front and back electrode block is as follows: A is connect with P4, and B is connect with P3, and C is connect with P2, and D is connect with P1, F is connect with P9, and G is connect with P8, and H is connect with P7, and J is connect with P6.
By circuit design so, it on the one hand can reduce package body sizes to a certain extent, on the other hand simplify Interior circuit layers, improve the reliability of device.
Embodiment 4
Figure 11 ~ 12 show the 4th embodiment of the utility model.Wherein Figure 11 is shown welds LD admittedly on the bracket 210 Front elevation after chip 220, the distribution of interior circuit layers 270 such as Figure 12 show that wherein the distribution of back-side circuit layer is according to shown in ginseng Fig. 7.
The optical element 230 of package body structure is equally placed along the clinodiagonal of bowl in the present embodiment, the four of bowl Four installation units are arranged in a corner, and the difference with third embodiment is the front-side circuit layer and internal circuit of bracket 210 The distribution of layer is different, and each installation unit includes first area 261 and second area 262 and third region 263, wherein LD core Piece 220 is installed on first area 261, and as close to bowl incline diagonal line or be located at clinodiagonal on, ESD protection member Part 250 is located at third region 263.The interior circuit layers 270 as shown in figure 12, have a series of first circuit connection units 271, 273,275,277 and the two the first circuit connection units 272,274,276,278, wherein the first circuit connection unit 271 is logical Hole A1 is connected to the first area 261 of front-side circuit layer, and through-hole C1 is connected to the third region 263 of front-side circuit layer, through-hole B1 It is connected to the electrode block 281 of back-side circuit layer.Preferably, through-hole B1 is located at the fringe region of bracket, and through-hole A1 and C1 are located at The inside of through-hole B1.In a specific implementation pattern, which includes: positioned near bracket side The starting ends 2711 of edge 210C, the first extension 2712, interconnecting piece 2713, the second extension 2714 and terminal part 2715, Middle through-hole B1 is located at starting ends 2711, and through-hole A1 is located at interconnecting piece 2713, and through-hole C1 is located at terminal part 2715.
In the present embodiment, the connection of front and back electrode block is as follows: A/A ' is connect with P4, and B is connect with P3, C/C ' with P1 connection, D are connect with P2, and F/F ' is connect with P9, and G is connect with P8, and H H ' is connect with P6, and J is connect with P7.In the present embodiment, Package body sizes can be reduced to a greater degree, or the compatible larger sized LD chip in same package size.
Previous embodiments list several different circuit distribution forms, it should be understood that the utility model is not Be confined to above-mentioned several circuit distribution patterns, can according to specific bowl shape or size, the quantity of laser chip etc. because Element designs the pattern of each circuit layer, to reach actual application demand.
Embodiment 5
As shown in figure 13, the present embodiment discloses a kind of laser package comprising bracket 210, laser chip 220, light Learn element 230 and cover board 240.It is different from one embodiment 1, the cover board 240 of the present embodiment includes 241 He of metal framework Wavelength conversion layer 242, which, which forms, is open and is embedded in wavelength conversion material as wavelength conversion layer 242, metal frame The opening of frame 240 can be arranged to one or more window structure according to light spot shape, as shown in FIG. 14 and 15.
In the present embodiment, output optical zone only is formed in the position that cover board 240 corresponds to optical element 230, reduces packaging body Light emitting anger, while have high heat conductance metal framework 241 can be easier export wavelength conversion layer 242 generate heat.
Figure 16 shows a variant embodiment of embodiment 5.The wavelength conversion layer of the present embodiment is formed in metal circle It on frame, can so increase the contact area of wavelength conversion layer 242 Yu metal framework 241, further promote wavelength conversion layer 242 Heat dissipation performance.
Embodiment 6
As shown in figure 17, the present embodiment discloses a kind of laser package comprising bracket 210, laser chip 220, light Learn element 230 and cover board 240.It is different from one embodiment 1, the optical element 230 of the packaging body is with high backslash The prism in face includes the plane of incidence 232, reflecting surface 231 and exit facet 233.It in the present embodiment, can be directly in the plane of incidence 232 Or wavelength is set on exit facet 233 and turns to claim layer.The optical element is preferably added by high transmission, rate high thermal conductivity material precision at this time Work is made, and thermal conductivity is that 5W/ (m K) or more is preferred, and transmitance is that 80% 1mm or more is preferred, and material can be high thermal conductivity glass Glass, silica, sapphire, crystalline ceramics etc..
Embodiment 7
The light source module group of one application aforementioned laser device packaging body of Figure 18 simple displaying.Since low-angle light source is easier Realize specified area illumination, low-angle laser light source is illuminated in high directivity or the communications field has a clear superiority, as headlight, Bulkhead lamp, fishing lamp, Navigation Lamp, projector, laser television, optic communication etc..Particularly, as shown in figure 18, in matrix form light source In mould group 300, more laser light sources 310a, 310b, 310c etc. by circuit design can independent control its switch, light source emergent light After lens 320 or reflecting mirror (are not drawn into) optical system processing in figure;Can the areas such as range of exposures 330a, 330b, 330c In domain, realize in the illumination for needing specified region.Specifically, in short distance meeting or encountering pedestrian during such as vehicle headlight should be used When, it needs to close the distance light in other side's driving range, guarantees traffic safety.The scheme that the present embodiment proposes can pass through Light source 330b, 330c are opened in control, are only illuminated in illumination region 330b, 330c to realize, have both been met itself vehicling lighting, Other side be can avoid again by strong illumination bring security risk.
It should be understood that above-mentioned specific embodiment is only the part preferred embodiment of the utility model, the above implementation Example can also carry out various combinations, deformation.The scope of the utility model is not limited to above embodiments, all to be done according to the utility model Any change, all category the protection scope of the utility model within.

Claims (12)

1. a kind of individual laser package structure, including
Bracket has bowl structure;
Laser chip is installed in the bowl of the bracket, can emit a first laser light beam;
Optical element is installed in the bowl of the bracket;
It is characterized by: the optical element has inclined reflecting surface and a platform structure, the size of the platform be 0.5 mm × 0.5mm or more is used for nozzle pick element in encapsulation procedure.
2. individual laser package structure according to claim 1, it is characterised in that: the bowl is equipped with step, the laser Chip is installed on the eminence of the step, and the optical element is installed on the lower of step.
3. individual laser package structure according to claim 2, it is characterised in that: the difference of height of the step be 0.1 ~ 0.5mm。
4. individual laser package structure according to claim 1, it is characterised in that: the bracket includes to be located at bracket front Front-side circuit layer, positioned at the back-side circuit layer of the cradle back and positioned at the interior circuit layers of the internal stent, the inside Circuit layer has plurality of circuits connection unit, and each circuit connection unit has the first connection through-hole and the second connection through-hole, Wherein the first connection through-hole is connected to the front-side circuit layer, and the second connection through-hole is connected to back-side circuit layer.
5. individual laser package structure according to claim 4, it is characterised in that: the front-side circuit layer includes two or more Device installation unit, which includes mutually isolated first area, second area;At least two laser core Piece is respectively arranged in the first area of each installation unit of the front-side circuit layer of the bracket.
6. individual laser package structure according to claim 5, it is characterised in that: the interior circuit layers include the first circuit Connection unit and second circuit connection unit, wherein the first area of the first circuit connection unit and the front-side circuit layer is formed It is electrically connected, the second area of second circuit connection unit and the front-side circuit layer forms circuit connection.
7. individual laser package structure according to claim 6, it is characterised in that: an installation of the front-side circuit layer is single Member corresponds to a first circuit connection unit and a second circuit connection unit for the interior circuit layers.
8. individual laser package structure according to claim 4, it is characterised in that: the second connection through-hole is located at the branch The fringe region of frame.
9. individual laser package structure according to claim 4, it is characterised in that: each circuit of the interior circuit layers connects Order member is located at the periphery of the corresponding position of the optical element.
10. individual laser package structure according to claim 1, it is characterised in that: further include a cover board, bracket is arranged in Top, for sealing the element in the bracket bowl.
11. individual laser package structure according to claim 10, it is characterised in that: the cover board includes wavelength conversion layer, Thermal conductivity is greater than 10W/mK.
12. individual laser package structure according to claim 10, it is characterised in that: the cover board includes metal framework and wavelength Conversion layer, the metal framework are set to the top of bracket, which is fixed by the metal framework.
CN201822249361.6U 2018-12-29 2018-12-29 A kind of individual laser package structure Active CN209487933U (en)

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CN201822249361.6U CN209487933U (en) 2018-12-29 2018-12-29 A kind of individual laser package structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201822249361.6U CN209487933U (en) 2018-12-29 2018-12-29 A kind of individual laser package structure

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Publication Number Publication Date
CN209487933U true CN209487933U (en) 2019-10-11

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