TW202021724A - Cutting device to save space and reduce the equipment costs when the processing requires a cutting device and an ultraviolet irradiation device - Google Patents

Cutting device to save space and reduce the equipment costs when the processing requires a cutting device and an ultraviolet irradiation device Download PDF

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TW202021724A
TW202021724A TW108142877A TW108142877A TW202021724A TW 202021724 A TW202021724 A TW 202021724A TW 108142877 A TW108142877 A TW 108142877A TW 108142877 A TW108142877 A TW 108142877A TW 202021724 A TW202021724 A TW 202021724A
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wafer
cutting device
adhesive film
cutting
support table
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TW108142877A
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TWI805870B (en
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龍才 姚
馬路良吾
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Confectionery (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

To provide a cutting device that can save space and reduce the equipment costs when the processing requires a cutting device and an ultraviolet irradiation device. [Solution] A cutting device that divides a wafer supported by a ring frame through an adhesive film into individual element chips, including: a chuck table, which includes a wafer support table for supporting the wafer, and a frame support portion 13 supporting the ring frame allocated on the outer periphery of the wafer support table; and a cutting unit that performs the cutting processing on the wafer supported by the wafer support table. The wafer support table contains an ultraviolet ray irradiation section, which irradiates ultraviolet rays to reduce the adhesive force of the adhesive film in the area corresponding to the wafer.

Description

切割裝置Cutting device

本發明係關於一種切割裝置，將透過黏著膠膜而為環狀框架所支撐的晶圓分割成各個元件晶片。The invention relates to a cutting device, which divides a wafer supported by a ring frame through an adhesive film into individual element chips.

IC、LSI等多個元件為交叉的多條分割預定線所劃分並形成於晶圓的正面上，該晶圓係藉由切割裝置而被分割成各個元件晶片，所分割的元件晶片被利用於行動電話、個人電腦等電子設備（參照例如專利文獻1）。Multiple components such as IC, LSI, etc. are divided by multiple predetermined dividing lines that intersect and are formed on the front surface of the wafer. The wafer is divided into individual component chips by a dicing device, and the divided component chips are used in Electronic devices such as mobile phones and personal computers (see, for example, Patent Document 1).

此外，晶圓係在被分割成各個元件晶片之前，被定位於具有收容晶圓的開口部之環狀框架的該開口部，和環狀框架一起黏貼黏著膠膜而一體構成。In addition, the wafer is positioned in the opening of a ring frame having an opening for accommodating the wafer before being divided into individual element wafers, and an adhesive film is bonded together with the ring frame to form an integrated structure.

然後，對晶圓實施切割加工，分割成各個元件晶片後，對與晶圓對應的黏著膠膜的區域照射紫外線而減低黏著力。其後，各個元件晶片從黏著膠膜被拾取（pickup）後，被接合（bonding）於配線基板上。 [習知技術文獻] [專利文獻]Then, the wafer is diced and divided into individual element wafers, and then ultraviolet rays are irradiated to the area of the adhesive film corresponding to the wafer to reduce the adhesive force. After that, each element chip is picked up from the adhesive film and then bonded on the wiring substrate. [Conventional Technical Literature] [Patent Literature]

[專利文獻1]日本特開2005-046979號公報[Patent Document 1] Japanese Patent Application Publication No. 2005-046979

[發明所欲解決的課題] 在以往，有以下問題：需要個別備置將晶圓分割成各個元件晶片的切割裝置、以及對黏著膠膜照射紫外線的紫外線照射裝置，需要設置各裝置的設置空間，並且設備費高昂。[Problems to be solved by the invention] In the past, there was a problem that a dicing device that divides the wafer into individual element wafers and an ultraviolet irradiation device that irradiates ultraviolet rays to the adhesive film need to be separately prepared, an installation space for each device is required, and equipment costs are high.

因此，本發明的目的，係提供一種切割裝置，當實施需要切割裝置與紫外線照射的加工時，可以實現裝置的省空間化、抑制設備費。Therefore, the object of the present invention is to provide a cutting device that can save space and reduce equipment costs when performing processing that requires the cutting device and ultraviolet radiation.

[解決課題的技術手段] 依據本發明，提供一種切割裝置，將透過黏著膠膜而為環狀框架所支撐的具有多個元件的晶圓分割成各個元件晶片，該切割裝置具備：卡盤台，其包含支撐晶圓的晶圓支撐台、以及支撐配設於該晶圓支撐台外周的環狀框架的框架支撐部；以及切割手段，其對為該晶圓支撐台所支撐的晶圓實施切割加工；該晶圓支撐台具備：紫外線照射手段，其照射紫外線而減低與晶圓對應的區域的黏著膠膜的黏著力。[Technical means to solve the problem] According to the present invention, there is provided a dicing device that divides a wafer with multiple components supported by a ring frame through an adhesive film into individual component wafers. The dicing device includes: a chuck table, which includes a wafer support A wafer support table, and a frame support part supporting an annular frame arranged on the outer periphery of the wafer support table; and a cutting means for performing cutting processing on the wafer supported by the wafer support table; the wafer support table Equipped with: ultraviolet irradiation means, which irradiates ultraviolet rays to reduce the adhesive force of the adhesive film in the area corresponding to the wafer.

較佳為該晶圓支撐台包含支撐基板，該支撐基板具有支撐晶圓的正面部並使紫外線穿透，該紫外線照射手段包含配設於該支撐基板背面側的紫外線照射源。較佳為該切割裝置進一步具備：清洗手段，其對為該卡盤台所支撐的晶圓、黏著膠膜、以及環狀框架噴射清洗水而進行清洗。Preferably, the wafer support table includes a support substrate having a front surface that supports the wafer and transmits ultraviolet rays, and the ultraviolet irradiation means includes an ultraviolet irradiation source arranged on the back side of the support substrate. Preferably, the dicing device further includes a cleaning means for spraying cleaning water on the wafer supported by the chuck table, the adhesive film, and the ring frame to clean.

[發明功效] 依據本發明，無需配設和切割裝置分離的紫外線照射裝置，可以實現裝置的省空間化，抑制設備費。尤其是，使晶圓支撐台備置支撐基板，在該支撐基板配設支撐晶圓的正面部並使紫外線穿透，並在該支撐基板的背面側備置紫外線照射源，藉此可以更有效地實現裝置的省空間化。[Effect of invention] According to the present invention, there is no need to provide an ultraviolet irradiation device separate from the cutting device, and the space saving of the device can be realized and the equipment cost can be reduced. In particular, the wafer support table is equipped with a supporting substrate, the front surface of the supporting wafer is arranged on the supporting substrate to allow ultraviolet rays to penetrate, and the ultraviolet radiation source is arranged on the back side of the supporting substrate, thereby achieving a more effective realization Space saving of the device.

以下，就本發明實施方式的切割裝置，一面參照附圖，一面詳細進行說明。Hereinafter, the cutting device according to the embodiment of the present invention will be described in detail with reference to the drawings.

圖1表示關於本實施方式的切割裝置1的整體立體圖，圖2表示圖1所示的切割裝置1的重要部位的立體圖。FIG. 1 shows an overall perspective view of the cutting device 1 related to this embodiment, and FIG. 2 shows a perspective view of important parts of the cutting device 1 shown in FIG. 1.

切割裝置1具備：卡盤台10，其載置並保持工件（圖2所示的晶圓W）；並且具備：切割手段20，其將透過各個黏著膠膜T而為環狀框架F所支撐的晶圓W分割成各個元件晶片。The dicing device 1 includes: a chuck table 10 that places and holds a workpiece (wafer W shown in FIG. 2); and includes a dicing means 20 that will be supported by the ring frame F through each adhesive film T The wafer W is divided into individual element wafers.

如圖1所示，卡盤台10被定位於：裝卸區域A，其係在以箭頭X所示的X軸方向進退，使晶圓W載置並保持在卡盤台10，或者將切割加工後的晶圓W從卡盤台10取出後搬出；以及加工區域B，利用切割手段20對為卡盤台10所保持的晶圓W實施切割加工。切割裝置1整體為殼體構件2所覆蓋，在裝卸區域A以及加工區域B的側方部設有開口部。雖然在圖1中被省略，但在各個裝卸區域A以及加工區域B的該開口部設有開關門，加工中，殼體構件2的內部成為關閉空間。此外，卡盤台10具備：蛇腹狀蓋構件30，其覆蓋使後述的卡盤台10移動用的移動手段。在殼體構件2的裝卸區域A的上方配設有觸控面板M，該觸控面板M係作業者確認與切割裝置1的各種作業相關的資訊，或者進行作業的指示。As shown in FIG. 1, the chuck table 10 is positioned in the loading and unloading area A, which is moved forward and backward in the X-axis direction shown by the arrow X, so that the wafer W is placed and held on the chuck table 10, or the cutting process The subsequent wafer W is taken out from the chuck table 10 and then carried out; and in the processing area B, the wafer W held by the chuck table 10 is cut by the cutting means 20. The cutting device 1 is entirely covered by the housing member 2, and openings are provided on the sides of the attachment/detachment area A and the processing area B. Although omitted in FIG. 1, openings and closing doors are provided in the openings of the respective loading and unloading areas A and processing areas B, and the inside of the housing member 2 becomes a closed space during processing. In addition, the chuck table 10 includes a bellows-shaped cover member 30 that covers a moving means for moving the chuck table 10 described later. A touch panel M is arranged above the attachment/detachment area A of the housing member 2, and the touch panel M is an operator's confirmation of information related to various operations of the cutting device 1 or instructions for performing operations.

在殼體構件2的裝卸區域A與加工區域B的邊界上方，配設有延伸於箭頭Y所示的Y軸方向的清洗手段40。此外，在殼體構件2的面臨裝卸區域A的開口部上方，配設有延伸於X軸方向的鼓風手段50。清洗手段40具有朝向下方將清洗水以高壓噴射成橫跨卡盤台10的X軸方向的全區域的功能，或者以高壓空氣噴射清洗水的雙流體功能，當卡盤台10從加工區域B移動到裝卸區域A時，對支撐於卡盤台10上的晶圓W、黏著膠膜T、以及環狀框架F供給清洗水。此外，鼓風手段50構成為：朝向下方對至少達到環狀框架F外徑的區域噴射高壓的空氣，並且當作業者從定位於裝卸區域A的卡盤台10上，和環狀框架F一起取出晶圓W時，可從開口部的上方噴射高壓的空氣，吹走水分。Above the boundary between the attachment/detachment area A and the processing area B of the housing member 2, a cleaning means 40 extending in the Y-axis direction indicated by the arrow Y is arranged. In addition, above the opening of the housing member 2 facing the attachment/detachment area A, a blowing means 50 extending in the X-axis direction is arranged. The cleaning means 40 has a function of spraying cleaning water at high pressure across the entire area of the chuck table 10 in the X-axis direction, or a dual-fluid function of spraying cleaning water with high pressure air, when the chuck table 10 is removed from the processing area B When moving to the loading and unloading area A, the wafer W, the adhesive film T, and the ring frame F supported on the chuck table 10 are supplied with washing water. In addition, the blowing means 50 is configured to blow high-pressure air downward to at least the area reaching the outer diameter of the ring frame F, and when the operator comes from the chuck table 10 positioned in the loading and unloading area A, together with the ring frame F When taking out the wafer W, high-pressure air can be sprayed from above the opening to blow away moisture.

茲一面參照圖2，一面就除了圖1所示的切割裝置1的殼體構件2以外的重要部位，進一步詳細進行說明。Referring to FIG. 2, important parts other than the housing member 2 of the cutting device 1 shown in FIG. 1 will be described in further detail.

卡盤台10係吸引保持透過圖示的黏著膠膜T而為環狀框架F所支撐的晶圓W的構件，具備：板狀的蓋構件11；略圓柱狀的晶圓支撐台12，其配設於蓋構件11的中央；以及框架支撐部13，其均等地配置於晶圓支撐台12的外周，用於固定保持晶圓W的環狀框架F。The chuck table 10 is a member that sucks and holds the wafer W supported by the ring frame F through the adhesive film T shown in the figure, and includes: a plate-shaped cover member 11; a substantially cylindrical wafer support table 12, which It is arranged in the center of the cover member 11; and the frame support portion 13, which is evenly arranged on the outer periphery of the wafer support table 12, is used to fix the ring frame F holding the wafer W.

使卡盤台10在X軸方向的裝卸區域A與加工區域B之間移動的移動手段係藉由以下構件而實現：台座部15，其透過支柱14而固定晶圓支撐台12；一對導軌17，其配設於基台1a上；滾珠螺桿18，其配設於導軌17間；以及馬達16，其旋轉驅動滾珠螺桿18。台座部15構成為可沿著上述的導軌17滑動，利用適當形成於台座部15底部下表面的未圖示的接合手段，使其和滾珠螺桿18接合。利用馬達16使滾珠螺桿18正轉或反轉，藉此可和台座部15一起使卡盤台10在X軸方向移動。在導軌17與台座部15之間配設有未圖示的位置檢測手段，該位置檢測手段以及馬達16連接於未圖示的控制手段，可將卡盤台10正確定位於所希望的位置上。The moving means for moving the chuck table 10 between the loading and unloading area A and the processing area B in the X-axis direction is realized by the following components: a pedestal portion 15, which fixes the wafer support table 12 through a pillar 14; a pair of guide rails 17, which is arranged on the base 1a; a ball screw 18, which is arranged between the guide rails 17; and a motor 16, which rotationally drives the ball screw 18. The pedestal portion 15 is configured to be slidable along the guide rail 17 described above, and is joined to the ball screw 18 by a joining means not shown, which is appropriately formed on the bottom surface of the pedestal portion 15. The ball screw 18 is rotated forward or reversed by the motor 16, and thereby the chuck table 10 can be moved in the X-axis direction together with the base 15. Between the guide rail 17 and the base 15 is arranged a position detection means not shown, and the position detection means and the motor 16 are connected to a control means not shown, so that the chuck table 10 can be accurately positioned at a desired position .

其次，就切割手段20進行說明。切割手段20具備固定於旋轉軸221前端部的切割刀片21，切割刀片21透過旋轉軸221而為主軸單元22所支撐。在主軸單元22的後端側配設有主軸馬達23，利用主軸馬達23，透過旋轉軸221可使切割刀片21以高速旋轉驅動。主軸單元22配設於滑動構件24的滑動板25上，滑動板25利用配設於滑動構件24上的Z軸方向移動馬達26，可沿著滑動構件24在以箭頭Z所示的Z軸方向精密地進退。Next, the cutting means 20 will be described. The cutting means 20 includes a cutting blade 21 fixed to the front end of the rotating shaft 221, and the cutting blade 21 is supported by the spindle unit 22 through the rotating shaft 221. A spindle motor 23 is arranged at the rear end of the spindle unit 22, and the cutting blade 21 can be driven to rotate at a high speed through the rotating shaft 221 by the spindle motor 23. The spindle unit 22 is arranged on the sliding plate 25 of the sliding member 24. The sliding plate 25 uses the Z-axis direction moving motor 26 arranged on the sliding member 24 to move along the sliding member 24 in the Z-axis direction indicated by arrow Z. Advance and retreat precisely.

滑動構件24利用設於豎立在基台1a上的壁部1b的跟前側的側面的滑移手段，可使其在水平方向（Y軸方向）滑動自如地移動。此滑移手段係由以下構件所構成：一對導軌27，其以平行配設於壁部1b側面的水平方向；滾珠螺桿28，其水平配設於一對導軌27之間；以及Y軸方向移動馬達29，其將滾珠螺桿28在正轉或反轉方向旋轉驅動。而且，滑動構件24滑動自如地懸吊於一對導軌27上，並且在滑動構件24的背面側，和滾珠螺桿28為適當的接合手段所接合。利用如此構成的滑移手段，藉由使Y軸方向移動馬達29在正轉方向或反轉方向旋轉，使滑動構件24在Y軸方向精密地進退。The sliding member 24 can be slidably moved in the horizontal direction (Y-axis direction) by sliding means provided on the side surface of the wall 1b standing on the base 1a on the front side. The sliding means is composed of the following components: a pair of guide rails 27, which are arranged in parallel to the horizontal direction of the side surface of the wall 1b; a ball screw 28, which is horizontally arranged between the pair of guide rails 27; and the Y axis direction The moving motor 29 drives the ball screw 28 to rotate in the forward or reverse direction. Furthermore, the sliding member 24 is slidably suspended from a pair of guide rails 27, and on the back side of the sliding member 24, it is joined to the ball screw 28 by an appropriate joining means. With the sliding means configured in this way, the sliding member 24 is precisely moved forward and backward in the Y-axis direction by rotating the Y-axis direction moving motor 29 in the forward rotation direction or the reverse direction.

如圖2所示，配設於卡盤台10的蓋構件11中央的晶圓支撐台12具備：正面部120，其係由圓形狀的支撐基板122、以及圍繞支撐基板122的框部121所構成。再者，從圖3所示可理解，從正面部120卸下支撐基板122的狀態，在為框部121所圍繞的區域且為支撐基板122的背面側，配設有朝向上方照射紫外線的紫外線照射手段60。紫外線照射手段60具備配設於框部121底部的紫外線照射基板62，在紫外線照射基板62上的劃分成格子狀的多個區域，備置有紫外線照射源（紫外線LED）64。此外，如圖4所示，在不配設紫外線照射基板62的紫外線照射源64的區域，配設有上下（正面背面）貫穿的連通孔66。電源72透過從框部121的下表面連接的電源供給電路70而連接於各紫外線照射源64。As shown in FIG. 2, the wafer support table 12 disposed in the center of the cover member 11 of the chuck table 10 includes a front surface 120 formed by a circular support substrate 122 and a frame 121 surrounding the support substrate 122. constitute. Furthermore, as can be understood from FIG. 3, in the state where the support substrate 122 is removed from the front portion 120, the area surrounded by the frame portion 121 and the back side of the support substrate 122 is provided with ultraviolet rays that irradiate ultraviolet rays upward. Irradiation means 60. The ultraviolet irradiation means 60 includes an ultraviolet irradiation substrate 62 disposed at the bottom of the frame 121, and a plurality of regions on the ultraviolet irradiation substrate 62 divided into a grid shape are provided with an ultraviolet irradiation source (ultraviolet LED) 64. In addition, as shown in FIG. 4, in a region where the ultraviolet irradiation source 64 of the ultraviolet irradiation substrate 62 is not arranged, a communication hole 66 penetrating vertically (front and back) is arranged. The power supply 72 is connected to each ultraviolet irradiation source 64 through a power supply circuit 70 connected from the lower surface of the frame 121.

支撐基板122係由透明的具有透氣性的板狀構件，例如多孔玻璃（porous glass）所構成。如圖3以及圖4所示，支撐基板122載置於上述的框部121內的紫外線照射手段60上，且使支撐基板122的上表面和框部121的上表面一致。使吸引通路141產生負壓的吸引手段（圖示省略）連接於通過晶圓支撐台12內的吸引通路141，透過紫外線照射基板62的連通孔66與具有透氣性的支撐基板122，使負壓透過黏著膠膜T而作用於保持在支撐基板122上表面的晶圓W。再者，支撐基板122未必需要是全體具有透氣性的多孔玻璃，也可以是平坦的略圓形狀的純粹的玻璃板。這種情況，要在多處形成上下連通於支撐基板122的外周部與框部121的邊界的間隙，透過該間隙，使負壓作用於支撐基板122上即可。The support substrate 122 is composed of a transparent plate-shaped member having air permeability, for example, porous glass. As shown in FIGS. 3 and 4, the support substrate 122 is placed on the ultraviolet irradiation means 60 in the frame 121 described above, and the upper surface of the support substrate 122 is aligned with the upper surface of the frame 121. A suction means (not shown) for generating negative pressure in the suction passage 141 is connected to the suction passage 141 passing through the wafer support table 12, and irradiates the communication hole 66 of the substrate 62 and the air-permeable supporting substrate 122 with ultraviolet rays to cause the negative pressure The adhesive film T acts on the wafer W held on the upper surface of the support substrate 122. In addition, the supporting substrate 122 does not necessarily need to be porous glass having air permeability as a whole, and may be a pure glass plate having a flat and substantially round shape. In this case, gaps that communicate up and down with the boundary between the outer peripheral portion of the support substrate 122 and the frame portion 121 are formed in multiple places, and negative pressure is applied to the support substrate 122 through the gaps.

本實施方式的切割裝置1大致構成如上述，茲就使用上述的切割裝置1將晶圓W分割成各個元件晶片的步驟，說明於下。The dicing device 1 of this embodiment is roughly configured as described above, and the steps of dividing the wafer W into individual element wafers using the dicing device 1 described above are described below.

當使用切割裝置1切割晶圓W時，如圖5所示，準備晶圓W，晶圓W透過黏著膠膜T而為具有開口部的環狀框架F所支撐。晶圓W的多個元件4透過分割預定線6而被劃分並形成於正面Wa上。黏著膠膜T係藉由照射紫外線而使黏著力降低的膠膜，例如可使用塗布有由丙烯酸系基底樹脂等構成的UV硬化糊的膠膜，該UV硬化糊係藉由對由聚氯乙烯（PVC）構成的片狀基材的黏貼面（黏貼晶圓W的面）照射紫外線，加以硬化而使黏著力降低者。再者，藉由照射紫外線而使黏著力降低的膠膜為眾所周知，只要是藉由照射紫外線而使黏著力降低的膠膜，則使用上述的黏著膠膜T以外的膠膜也無妨。When the wafer W is diced using the dicing device 1, as shown in FIG. 5, the wafer W is prepared, and the wafer W is supported by the ring frame F having an opening through the adhesive film T. The multiple elements 4 of the wafer W are divided by the planned dividing line 6 and formed on the front surface Wa. The adhesive film T is an adhesive film whose adhesive force is reduced by irradiating ultraviolet rays. For example, an adhesive film coated with a UV curable paste composed of acrylic base resin or the like can be used. The UV curable paste is made of polyvinyl chloride. (PVC) The adhesive surface (the surface where the wafer W is stuck) of the sheet-like base material is irradiated with ultraviolet rays and hardened to reduce the adhesive force. Furthermore, the adhesive film whose adhesive force is reduced by ultraviolet irradiation is well-known, and as long as it is an adhesive film whose adhesive force is reduced by ultraviolet irradiation, it does not matter to use an adhesive film other than the adhesive film T mentioned above.

如上述，若已準備透過黏著膠膜T而為環狀框架F所支撐的晶圓W，就以黏著膠膜T側為下而載置並吸引保持在定位於裝卸區域A的卡盤台10的晶圓支撐台12的正面部120上，以框架支撐部13固定支撐晶圓W的環狀框架F。若已在卡盤台10上保持晶圓W，就將卡盤台10移動到加工區域B側。As described above, if the wafer W supported by the ring frame F through the adhesive film T is prepared, the chuck table 10 positioned in the loading and unloading area A is placed and held with the adhesive film T side as the bottom. On the front surface 120 of the wafer support table 12, the ring frame F supporting the wafer W is fixed by the frame support portion 13. If the wafer W has been held on the chuck table 10, the chuck table 10 is moved to the processing area B side.

如圖6所示，切割手段20的主軸單元22具備：切割刀片21，其被固定於旋轉軸221的前端部，在外周具有切割刃；以及刀片蓋223，其保護切割刀片21。切割刀片21為例如電鑄磨石，設定成直徑為50mm、厚度為30μm。切割刀片21藉由主軸馬達23的驅動，而以例如20,000rpm的速度旋轉。關於刀片蓋223，在與切割刀片21鄰接的位置上配設有切割水供給手段224，朝向切割刀片21的切割位置供給切割水。當利用切割刀片21實施切割加工時，預先使用未圖示的對準（alignment）手段，進行切割刀片21與為卡盤台10所保持的晶圓W的加工位置的對位（對準）。關於該對準手段，至少具備未圖示的照明手段、以及攝像手段，構成為可從晶圓W的正面Wa側拍攝、檢測晶圓W的正面Wa的分割預定線6。As shown in FIG. 6, the spindle unit 22 of the cutting means 20 includes a cutting blade 21 fixed to the front end of the rotating shaft 221 and having a cutting blade on the outer periphery; and a blade cover 223 that protects the cutting blade 21. The cutting blade 21 is, for example, an electroformed grindstone, and is set to have a diameter of 50 mm and a thickness of 30 μm. The cutting blade 21 is driven by the spindle motor 23 to rotate at a speed of, for example, 20,000 rpm. Regarding the blade cover 223, a cutting water supply means 224 is arranged at a position adjacent to the cutting blade 21, and cutting water is supplied toward the cutting position of the cutting blade 21. When the dicing blade 21 is used for dicing processing, alignment (not shown) is used in advance to align (align) the dicing blade 21 with the processing position of the wafer W held by the chuck table 10. Regarding the alignment means, at least not-shown illumination means and imaging means are provided, and are configured to be able to image and detect the planned dividing line 6 of the front Wa of the wafer W from the front Wa side of the wafer W.

若已實施該對準手段的對準，就將和旋轉軸221一起高速旋轉的切割刀片21定位於晶圓W上的預定的加工開始位置，使切割刀片21的下端位置下降並切入到完全切割晶圓W、稍微到達黏著膠膜T的高度位置，使保持晶圓W的卡盤台10相對於切割刀片21在以箭頭X所示的X軸方向（加工進給方向）移動。此時的加工進給速度設定為例如50mm／秒。藉此，如圖6所示，切割與晶圓W的分割預定線6對應的區域，形成切割槽100。然後，一面利用上述的移動手段，使卡盤台10在X軸方向以及和X軸方向正交的方向適當移動，一面對晶圓W的預定方向的所有分割預定線6，利用上述的切割刀片21形成切割槽100。若是已對應卡盤台10的預定方向的所有分割預定線6而形成了切割槽100，就使晶圓支撐台12旋轉90度，在和上述的預定方向正交的方向，在與分割預定線6對應的區域，和上述同樣地形成切割槽100。藉此，在與晶圓W的所有分割預定線6對應的區域，形成切割槽100。其結果，如圖7所示，形成於晶圓W的正面Wa上的元件4被分割成各個元件晶片4， 。If the alignment by the alignment means has been performed, the dicing blade 21, which rotates at a high speed together with the rotating shaft 221, is positioned at the predetermined processing start position on the wafer W, and the lower end position of the dicing blade 21 is lowered and cuts completely. The wafer W slightly reaches the height position of the adhesive film T, and the chuck table 10 holding the wafer W is moved relative to the dicing blade 21 in the X-axis direction (processing feed direction) indicated by the arrow X. The processing feed rate at this time is set to, for example, 50 mm/sec. Thereby, as shown in FIG. 6, a region corresponding to the planned dividing line 6 of the wafer W is cut to form a cutting groove 100. Then, while using the above-mentioned moving means to appropriately move the chuck table 10 in the X-axis direction and the direction orthogonal to the X-axis direction, while facing all the planned dividing lines 6 in the predetermined direction of the wafer W, the above-mentioned cutting The blade 21 forms a cutting groove 100. If the dicing groove 100 has been formed corresponding to all the planned dividing lines 6 in the predetermined direction of the chuck table 10, the wafer support table 12 is rotated 90 degrees in a direction orthogonal to the above-mentioned predetermined direction, and at the predetermined dividing line 6 The area corresponding to 6 is formed with the cutting groove 100 in the same manner as described above. In this way, dicing grooves 100 are formed in regions corresponding to all the planned dividing lines 6 of the wafer W. Element 4 is divided into individual elements on the wafer a result, as shown in FIG. 7, the wafer W is formed in the front surface Wa 4,.

若已如上述般，實施了利用切割手段20形成切割槽100的切割加工，就如圖8所示，一面從清洗手段40朝向下方使清洗水42以高壓噴出，一面使卡盤台10從X軸方向，即加工區域B側朝向裝卸區域A移動。藉此，清洗晶圓W、黏著膠膜T、以及環狀框架F，去除切割加工時飛散的未圖示的切割屑。再者，當從清洗手段40噴出清洗水42時，為了使清洗效果提高，較佳是使清洗水42以高壓空氣噴射的雙流體噴射。If the cutting process of forming the cutting groove 100 by the cutting means 20 has been performed as described above, as shown in FIG. 8, the washing water 42 is sprayed at a high pressure from the washing means 40 downward, and the chuck table 10 is ejected from X The axial direction, that is, the processing area B side moves toward the loading and unloading area A. Thereby, the wafer W, the adhesive film T, and the ring frame F are cleaned, and the dicing chips not shown scattered during the dicing process are removed. Furthermore, when the washing water 42 is sprayed from the washing means 40, in order to improve the washing effect, it is preferable to spray the washing water 42 with a two-fluid jet of high-pressure air.

若已如上述般，清洗了晶圓W、黏著膠膜T、以及環狀框架F，就使卡盤台10定位於裝卸區域A後停止。若已在裝卸區域A使卡盤台10停止，就如從圖9（作為晶圓支撐台12以及晶圓W的局部放大剖面圖所示）可理解般，使紫外線照射源64作動預定時間（例如30秒程度）。從紫外線照射源64照射之在圖中以UV所示的紫外線會穿透由多孔玻璃構成的支撐基板122，照射到與晶圓W對應的區域的黏著膠膜T，減低黏著膠膜T的黏著力。即，對黏著膠膜T照射紫外線，覆蓋於黏著膠膜T正面（黏貼有晶圓W的面）的UV硬化糊就會硬化，而使黏著力降低。再者，此時的黏著力降低，是指保持黏著膠膜T上的各個元件晶片4， 的程度被某種程度地降低，而不是達到完全喪失黏著力程度的降低。此外，該紫外線的照射，是上述的清洗手段40的清洗之後，即在清洗水42殘留於晶圓W、膠膜T上的狀態被實施。一般藉由照射紫外線而使黏著力降低的UV硬化糊，若是在含有氧氣的空氣內照射紫外線，黏著力的降低會較小。因此，如上述，在晶圓W、黏著膠膜T上留下清洗水42的狀態下，從黏著膠膜T的下表面側照射紫外線，藉此將黏著膠膜T與空氣中的氧氣隔離，可有效地使黏著力降低。If the wafer W, the adhesive film T, and the ring frame F have been cleaned as described above, the chuck table 10 is positioned in the loading and unloading area A and then stopped. If the chuck table 10 has been stopped in the loading and unloading area A, as can be understood from FIG. 9 (shown as a partial enlarged cross-sectional view of the wafer support table 12 and the wafer W), the ultraviolet irradiation source 64 is operated for a predetermined time ( For example, about 30 seconds). The ultraviolet rays irradiated from the ultraviolet radiation source 64 as shown by UV in the figure will penetrate the support substrate 122 made of porous glass and irradiate the adhesive film T in the area corresponding to the wafer W, reducing the adhesion of the adhesive film T force. That is, by irradiating the adhesive film T with ultraviolet rays, the UV curable paste covering the front surface of the adhesive film T (the surface where the wafer W is attached) is hardened, and the adhesive force is reduced. Furthermore, the decrease in the adhesive force at this time means that the degree of holding each device chip 4 on the adhesive film T is reduced to a certain extent, rather than a decrease in the degree of complete loss of adhesive force. In addition, this ultraviolet irradiation is performed after the cleaning by the cleaning means 40 described above, that is, in a state where the cleaning water 42 remains on the wafer W and the adhesive film T. Generally, UV curable pastes whose adhesive strength is reduced by irradiating ultraviolet rays, if irradiated with ultraviolet rays in oxygen-containing air, the adhesive strength will be lower. Therefore, as described above, with the cleaning water 42 left on the wafer W and the adhesive film T, ultraviolet rays are irradiated from the lower surface of the adhesive film T to isolate the adhesive film T from oxygen in the air. Can effectively reduce the adhesion.

若已如上述般，從支撐晶圓W的黏著膠膜T的下表面側照射紫外線而使黏著膠膜T的黏著力降低了，就如圖10所示，以作業員的手（以H表示）夾持在裝卸區域A的為卡盤台10所保持的環狀框架F，從與裝卸區域A對應所設的開口部，和環狀框架F一起取出晶圓W。此時，從鼓風手段50的下表面噴射高壓空氣52，吹掉殘留於環狀框架F上的清洗水42，形成去除了水分的乾燥狀態。再者，圖10中雖然表示以作業員的手作業實施取出環狀框架F的作業的例子，但未必要受以手作業取出限定，也可以使用具備吸附手段的懸臂等的自動搬出裝置。如上述，從裝卸區域A搬出的晶圓W被搬送到下一個步驟（例如拾取步驟、接合（bonding）步驟等），或是被搬送到和環狀框架F一起收容晶圓W的未圖示的收容卡匣並收容。If, as described above, ultraviolet rays are irradiated from the lower surface of the adhesive film T supporting the wafer W to reduce the adhesive force of the adhesive film T, as shown in Figure 10, the operator’s hand (indicated by H ) The ring frame F held by the chuck table 10 clamped in the loading and unloading area A, and the wafer W is taken out together with the ring frame F from the opening provided in the loading and unloading area A. At this time, the high-pressure air 52 is sprayed from the lower surface of the blowing means 50 to blow off the washing water 42 remaining on the ring frame F, and a dry state is formed in which moisture is removed. In addition, although FIG. 10 shows an example in which the work of taking out the ring frame F is performed by the hand of the operator, it is not necessarily limited to taking out by the hand, and an automatic unloading device such as a cantilever provided with suction means may be used. As described above, the wafer W unloaded from the loading and unloading area A is transported to the next step (for example, a pick-up step, a bonding step, etc.), or is transported to the ring frame F that accommodates the wafer W, not shown The containment cassette and contain it.

如上述，依據本實施方式的切割裝置1，使其具備：紫外線照射手段60，其係對構成卡盤台10的晶圓支撐台12照射紫外線，而減低與晶圓W對應的區域的黏著膠膜T的黏著力。藉此，無需配設和切割裝置1分離的紫外線照射裝置，可以實現裝置的省空間化，抑制設備費。尤其是，使晶圓支撐台12備置支撐基板122，支撐基板122支撐晶圓W並使紫外線穿透，並在支撐基板122的背面側備置紫外線照射源64，藉此更有效地實現裝置的省空間化。As described above, according to the dicing device 1 of the present embodiment, it is provided with the ultraviolet irradiation means 60, which irradiates the wafer support table 12 constituting the chuck table 10 with ultraviolet rays to reduce the adhesive in the area corresponding to the wafer W Adhesion of film T. Thereby, there is no need to arrange an ultraviolet irradiation device separate from the cutting device 1, and the space saving of the device can be realized and the equipment cost can be reduced. In particular, the wafer support table 12 is provided with a support substrate 122, which supports the wafer W and transmits ultraviolet rays, and is equipped with an ultraviolet radiation source 64 on the back side of the support substrate 122, thereby achieving more effective device saving. Spatialization.

1:切割裝置 1a:基台 1b:壁部 2:殼體構件 10:卡盤台 11:蓋構件 12:晶圓支撐台 120:正面部 121:框部 122:支撐基板 13:框架支撐部 14:支柱 16:馬達 18:滾珠螺桿 20:切割手段 21:切割刀片 22:主軸單元 221:旋轉軸 23:主軸馬達 24:滑動構件 25:滑動板 26:Z軸方向移動馬達 27:導軌 28:滾珠螺桿 29:Y軸方向移動馬達 30:蛇腹狀蓋構件 40:清洗手段 42:清洗水 50:鼓風手段 52:高壓空氣 60:紫外線照射手段 62:紫外線照射基板 64:紫外線照射源 66:連通孔 70:電源供給電路 72:電源 A:裝卸區域 B:加工區域 F:環狀框架 T:黏著膠膜 1: Cutting device 1a: Abutment 1b: Wall 2: shell components 10: Chuck table 11: cover member 12: Wafer support table 120: front 121: Frame 122: Support substrate 13: Frame support 14: Pillar 16: motor 18: Ball screw 20: Cutting means 21: Cutting blade 22: Spindle unit 221: Rotation axis 23: Spindle motor 24: Sliding member 25: Sliding plate 26: Moving motor in Z axis direction 27: Rail 28: Ball screw 29: Moving motor in Y-axis direction 30: bellows-shaped cover member 40: Cleaning means 42: Washing water 50: blast means 52: high pressure air 60: Ultraviolet radiation means 62: UV irradiation substrate 64: UV radiation source 66: Connecting hole 70: Power supply circuit 72: Power A: Loading area B: Processing area F: ring frame T: Adhesive film

圖1為關於本發明實施方式的切割裝置的整體立體圖。 圖2為表示圖1所示的切割裝置的重要部位的立體圖。 圖3為將圖2所示的重要部位的卡盤台放大表示的立體圖。 圖4為構成圖3所示的卡盤台的晶圓支撐台的局部放大剖面圖。 圖5為作為工件的晶圓、支撐晶圓的黏著膠膜、以及環狀框架的整體立體圖。 圖6為表示切割加工實施態樣的重要部位的立體圖。 圖7為實施切割加工且被分割成各個元件晶片的晶圓的立體圖。 圖8為表示清洗手段的清洗態樣的立體圖。 圖9為表示紫外線照射手段對晶圓照射紫外線的態樣的局部放大剖面圖。 圖10為表示清洗對黏著膠膜T照射過紫外線的晶圓的態樣的立體圖。Fig. 1 is an overall perspective view of a cutting device related to an embodiment of the present invention. Fig. 2 is a perspective view showing important parts of the cutting device shown in Fig. 1. Fig. 3 is an enlarged perspective view showing a chuck table of an important part shown in Fig. 2. Fig. 4 is a partially enlarged cross-sectional view of a wafer support table constituting the chuck table shown in Fig. 3. 5 is an overall perspective view of a wafer as a workpiece, an adhesive film supporting the wafer, and a ring frame. Fig. 6 is a perspective view showing an important part of the cutting process. Fig. 7 is a perspective view of a wafer subjected to a dicing process and divided into individual element wafers. Fig. 8 is a perspective view showing a cleaning state of the cleaning means. Fig. 9 is a partial enlarged cross-sectional view showing a state in which the ultraviolet irradiation means irradiates ultraviolet rays to the wafer. FIG. 10 is a perspective view showing a state in which a wafer irradiated with ultraviolet rays to the adhesive film T is cleaned.

10:卡盤台 10: Chuck table

11:蓋構件 11: cover member

12:晶圓支撐台 12: Wafer support table

13:框架支撐部 13: Frame support

14:支柱 14: Pillar

15:台座部 15: Pedestal

60:紫外線照射手段 60: Ultraviolet radiation means

62:紫外線照射基板 62: UV irradiation substrate

64:紫外線照射源 64: UV radiation source

66:連通孔 66: Connecting hole

121:框部 121: Frame

122:支撐基板 122: Support substrate

Claims (3)

一種切割裝置，將透過黏著膠膜而為環狀框架所支撐的具有多個元件的晶圓分割成各個元件晶片，該切割裝置具備： 卡盤台，其包含支撐晶圓的晶圓支撐台、以及支撐配設於該晶圓支撐台外周的環狀框架的框架支撐部；以及 切割手段，其對為該晶圓支撐台所支撐的晶圓實施切割加工； 該晶圓支撐台具備：紫外線照射手段，其照射紫外線而減低與晶圓對應的區域的黏著膠膜的黏著力。A cutting device that divides a wafer with multiple elements supported by a ring frame through an adhesive film into individual element chips. The cutting device includes: The chuck table includes a wafer support table that supports the wafer, and a frame support portion that supports a ring frame arranged on the outer periphery of the wafer support table; and Cutting means, which cuts the wafer supported by the wafer support table; The wafer support table is equipped with an ultraviolet irradiation means that irradiates ultraviolet rays to reduce the adhesive force of the adhesive film in the area corresponding to the wafer. 如申請專利範圍第1項所述之切割裝置，其中， 該晶圓支撐台包含支撐基板，該支撐基板具有支撐晶圓的正面部並使紫外線穿透， 該紫外線照射手段包含配設於該支撐基板背面側的紫外線照射源。The cutting device as described in item 1 of the scope of patent application, wherein: The wafer support table includes a support substrate that has a front surface that supports the wafer and allows ultraviolet rays to penetrate, The ultraviolet irradiation means includes an ultraviolet irradiation source arranged on the back side of the support substrate. 如申請專利範圍第1或2項所述之切割裝置，其中， 進一步具備：清洗手段，其對為該卡盤台所支撐的晶圓、黏著膠膜、以及環狀框架噴射清洗水而進行清洗。Such as the cutting device described in item 1 or 2 of the scope of patent application, wherein: It further includes a cleaning means for spraying cleaning water on the wafer, the adhesive film, and the ring frame supported by the chuck table to clean the wafer.
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