TW202020838A - 有機發光二極體驅動裝置之感測電路及其驅動裝置 - Google Patents

有機發光二極體驅動裝置之感測電路及其驅動裝置 Download PDF

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TW202020838A
TW202020838A TW108116673A TW108116673A TW202020838A TW 202020838 A TW202020838 A TW 202020838A TW 108116673 A TW108116673 A TW 108116673A TW 108116673 A TW108116673 A TW 108116673A TW 202020838 A TW202020838 A TW 202020838A
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sensing
circuit
capacitor
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程智修
曾柏瑜
梁可駿
黃如琳
周志憲
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聯詠科技股份有限公司
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Abstract

一種感測電路，用於一有機發光二極體驅動裝置，該感測電路包含有一取樣保持電路及一鉗位電路。該取樣保持電路包含有一電容。該鉗位電路耦接於該取樣保持電路，可用來鉗位該取樣保持電路所接收的一感測電壓，使該感測電壓符合該電容之一耐受電壓。

Description

有機發光二極體驅動裝置之感測電路及其驅動裝置
本發明係指一種可用於有機發光二極體（Organic Light-Emitting Diode，OLED）驅動裝置之感測電路，尤指一種可用來感測有機發光二極體面板上畫素單元之參數的有機發光二極體驅動裝置之感測電路。
有機發光二極體（Organic Light-Emitting Diode，OLED）為發光二極體（Light-Emitting Diode，LED）的一種，其電致發光層是由有機化合物所構成，該有機化合物可因接收到電流而發光。有機發光二極體廣泛應用於電子裝置之顯示設備，例如電視螢幕、電腦顯示器、各類可攜式裝置例如行動電話、手持式遊戲主機及個人數位助理（Personal Digital Assistant，PDA）等。其中，主動矩陣式有機發光二極體（Active Matrix OLED，AMOLED）為目前有機發光二極體顯示面板的主流。主動矩陣式有機發光二極體可由薄膜電晶體（Thin-Film Transistor，TFT）來進行驅動，並包含儲存電容用來維持畫素的狀態，以應用於大尺寸及高解析度的顯示器。
在一般有機發光二極體面板中，每一畫素單元皆包含有三個子畫素，其中每一子畫素包含可產生三原色其中一者的有機發光二極體，用來組成欲顯示在該畫素單元上的顏色。子畫素可從一驅動積體電路（Driver Integrated Circuit，Driver IC）接收一電壓訊號，接著，薄膜電晶體可將電壓訊號轉換為一驅動電流，以驅動有機發光二極體發光。第1圖繪示常見的一有機發光二極體面板10之結構，其中，每一子畫素包含有三個薄膜電晶體M1～M3及一有機發光二極體L1。有機發光二極體L1發光之亮度可由其通過之驅動電流來決定，其中，驅動電流可由驅動薄膜電晶體M1進行轉換並產生，薄膜電晶體M2及M3則作為轉傳訊號之開關器。然而，在有機發光二極體面板10中，不同子畫素中的驅動薄膜電晶體M1可能存在元件參數誤差或不匹配的情況，導致電壓／電流轉換效能產生差異，此外，有機發光二極體L1之發光效率也可能存在誤差。當有機發光二極體面板10經過一段長時間的運作之後，可能面臨電壓／電流轉換及發光效率的衰減。在此情形下，有機發光二極體面板10上各個位置可能存在不同程度的衰減，使得有機發光二極體面板10的畫面一致性降低。
為了改善有機發光二極體面板的畫面一致性，源極驅動裝置通常配備有一感測電路，用來感測各個參數（例如有機發光二極體之發光效率及／或薄膜電晶體的元件參數）之衰減程度。請參考第2圖，第2圖為常見的一有機發光二極體控制系統20之示意圖。有機發光二極體控制系統20包含有一控制器202、一源極驅動裝置204及一有機發光二極體面板206。控制器202可實現為一系統單晶片（System on a Chip，SOC），用來輸出顯示資料並執行用於有機發光二極體面板206之感測操作。源極驅動裝置204包含有一驅動電路210及一感測電路220，其感測方式為，驅動電路210傳送一驅動訊號至有機發光二極體面板206上的一目標子畫素，感測電路220再從該子畫素對應接收一感測電壓。位於接收端之一類比數位轉換器（Analog to Digital Converter，ADC）可用來接收感測電壓。為了降低雜訊干擾，感測電路220還包含一電容陣列，而隨著大尺寸面板的需求提升，有機發光二極體面板上子畫素的數量也不斷提升，因此，感測電路220需包含大量的電容以實現感測功能。大量的電容佔據了龐大的電路面積，因而具有較高的電路成本。
考量成本問題，電容可被設置為適用於子畫素能夠產生的小範圍感測電壓。舉例來說，有機發光二極體面板可操作在電源供應電壓VDDA（如18V）之下，有機發光二極體面板的正常感測操作中可產生3V～6V範圍內之感測電壓。因此，在正常操作之下，具有操作電壓範圍∆3V的電容即足以使用，一般可將電容調整為可接收3V～6V之間的跨壓。然而，面板的缺陷可能導致超出預期之感測電壓被傳送至感測電路，此超出預期之感測電壓可能高達電源供應電壓18V或低至接地電壓0V，造成感測電路中的電容燒毀。因此，在習知源極驅動裝置中，往往需設置具有高耐壓的電容，其可接收的電壓範圍需從0V至18V，然而，耐壓的增加使得電容面積也等比例的增加。
有鑑於此，習知技術實有改進之必要。
因此，本發明之主要目的即在於提供一種可用於有機發光二極體（Organic Light-Emitting Diode，OLED）驅動裝置之感測電路，感測電路中的電容可受到保護，以避免電容接收到超出預期之過高或過低的感測電壓。
本發明揭露一種感測電路，用於一有機發光二極體驅動裝置，該感測電路包含有一取樣保持電路（sample and hold circuit）及一鉗位電路。該取樣保持電路包含有一電容。該鉗位電路耦接於該取樣保持電路，可用來鉗位該取樣保持電路所接收的一感測電壓，使該感測電壓符合該電容之一耐受電壓。
本發明另揭露一種有機發光二極體驅動裝置，該有機發光二極體驅動裝置包含有一驅動電路及一感測電路。該驅動電路可用來傳送一驅動訊號至一有機發光二極體面板。該感測電路可用來從該有機發光二極體面板接收對應於該驅動訊號之一感測電壓，該感測電路包含有一取樣保持電路及一鉗位電路。該取樣保持電路包含有一電容。該鉗位電路耦接於該取樣保持電路，可用來鉗位該感測電壓，使該感測電壓符合該電容之一耐受電壓。
第3圖為本發明實施例一源極驅動裝置30之示意圖。源極驅動裝置30包含有一驅動電路310及一感測電路320。第3圖另繪示有機發光二極體（Organic Light-Emitting Diode，OLED）面板之一子畫素350，其未包含在源極驅動裝置30中，但繪示於第3圖以方便說明。如第3圖所示，子畫素350包含有一有機發光二極體、三個電晶體（如薄膜電晶體（Thin-Film Transistor，TFT））及一電容而構成的3T1C結構。本領域具通常知識者應了解，本發明可應用於具有任何結構之有機發光二極體面板，而第3圖之子畫素結構僅為本發明眾多實施方式當中的一種。
驅動電路310包含有一輸出驅動器312，可在顯示期間內輸出顯示資料至子畫素350。在感測期間內，驅動電路310可傳送一驅動訊號至子畫素350之資料線。感測電路320可透過感測線從子畫素350接收對應於該驅動訊號之一感測電壓VSEN。感測電路320包含有一取樣保持電路322、一鉗位電路324及一類比數位轉換器（Analog to Digital Converter，ADC）326。取樣保持電路322包含有一開關器SW1及一電容C1。一般來說，感測電路320可感測並接收子畫素350之節點VA上的電壓。用來反映從子畫素感測之參數的感測電壓VSEN可通過鉗位電路324，再由開關器SW1進行取樣以傳送至節點VB。當感測電壓VSEN由取樣保持電路322進行取樣並保持在節點VB之後，類比數位轉換器326再接著將感測電壓VSEN轉換為相對應之數位資料。
電容C1可用來穩定節點VB上的感測電壓VSEN。如上所述，習知的電容應具備較高的耐受電壓，其可接收接地電壓到電源供應電壓之間的電壓範圍，以適用於例如面板缺陷等非正常情況，因而需配置大量的電路面積給習知電容。相較之下，本發明可使用耐受電壓較低的電容，以降低電路面積，進而降低電路成本。如第3圖所示，鉗位電路324可將感測電壓VSEN鉗位在預期從子畫素350接收之一正常電壓準位，此正常電壓準位符合電容C1之耐受電壓。換句話說，電容C1之耐受電壓僅需要搭配較小範圍的感測電壓，可降低電容C1的面積。
詳細來說，電容C1之一端耦接於一參考端，可用來接收一參考電壓VREF；電容C1之另一端耦接於節點VB，可用來接收感測電壓VSEN。鉗位電路324可對感測電壓VSEN進行鉗位，使得從節點VB接收的感測電壓VSEN與參考電壓VREF之間的電位差位於電容C1之耐受電壓內，此耐受電壓為電容C1所能允許的最大跨壓。在此例中，參考電壓VREF可透過一參考端點（如源極驅動裝置30之一輸入接墊）從外接電壓源接收；而在另一實施例中，參考電壓VREF亦可由包含在源極驅動裝置30內部的參考產生器產生。
請參考第4圖，第4圖為本發明實施例源極驅動裝置30的操作電壓範圍之示意圖。源極驅動裝置30可接收一電源供應電壓VDD及一接地電壓GND以進行運作，其分別為源極驅動裝置30之最大操作電壓及最小操作電壓。在正常情況下，從有機發光二極體面板接收的感測電壓VSEN位於電壓V1與V2之間的範圍，因此，可將參考電壓VREF設定於V1及V2之間，電容C1之耐受電壓則設定為一電位差∆V，此電位差∆V等於或略大於參考電壓VREF與電壓V1之間的電位差，也等於或略大於參考電壓VREF與電壓V2之間的電位差。因此，在正常操作之下，電容C1所接收的感測電壓VSEN位於參考電壓VREF加減電位差∆V的範圍內，符合電容C1之耐受電壓。
在非正常狀況下，可能發生如缺陷點或缺陷線之面板缺陷，使得面板上發生缺陷的子畫素輸出超出預期之感測電壓，此超出預期之感測電壓可能高達電源供應電壓VDD或低至接地電壓GND。鉗位電路324可避免超出預期之感測電壓VSEN被電容C1接收。在一實施例中，鉗位電路324可鉗位感測電壓VSEN使其低於參考電壓VREF加上電位差∆V之上限的數值，及／或鉗位感測電壓VSEN使其高於參考電壓VREF減去電位差∆V之下限的數值。如此一來，電容C1所接收的感測電壓VSEN可被限制在預設的範圍內，可避免電容C1的跨壓超過其耐受電壓而造成電容C1燒毀。
因此，由於鉗位電路324的設置，電容C1所接收到的感測電壓VSEN被限制在電容C1的正常操作範圍內，使得電容C1可以是具有較低耐受電壓的小面積電容。需注意的是，源極驅動裝置30之感測電路320可能包含數百或數千個通道，每一通道皆包含一取樣保持電路搭配一電容，用來從有機發光二極體面板之一行子畫素接收感測電壓。因此，若每一通道皆採用面積較小的電容，在源極驅動裝置30之電路面積及成本上可達到大幅度的改善。
除此之外，感測電路320中的類比數位轉換器326僅需要支援符合電容C1之正常操作電壓的電壓範圍或鉗位電路324所限制的電壓，其大幅小於源極驅動裝置30之操作電壓範圍VDD～GND，使得類比數位轉換器326可採用較簡單的設計，同時具有較低耗電。在一實施例中，可控制類比數位轉換器326及鉗位電路324的設定以搭配各種應用，例如不同類型的有機發光二極體面板及／或不同的系統電壓。類比數位轉換器326之操作範圍可設定為符合有機發光二極體面板在正常狀況下接收的感測電壓VSEN，且電容C1的尺寸（對應於一特定耐受電壓）以及鉗位電路324之上下限皆可對應進行調整。
本發明之鉗位電路可透過任何方式實現。請參考第5圖，第5圖為一感測電路500及其鉗位電路的一種詳細實現方式之示意圖。感測電路500之結構類似於感測電路320之結構，故功能相似的訊號及元件皆以相同符號表示。如第5圖所示，鉗位電路324包含有二個二極體D1及D2，分別用來接收偏置電壓VB1及VB2。感測電路500另包含有一參考電壓產生器502，用來輸出參考電壓VREF至電容C1。參考電壓產生器502還可用來產生偏置電壓VB1及VB2，並分別將偏置電壓VB1及VB2輸出至二極體D1及D2。二極體D1及D2具有一臨界電壓Vth，因此，若所接收的感測電壓VSEN傾向於上升時，感測電壓VSEN會受到二極體D1的鉗位而被限制在小於VB1加上Vth的準位，且若感測電壓VSEN傾向於下降時，感測電壓VSEN會受到二極體D2的鉗位而被限制在大於VB2減去Vth的準位。參考電壓產生器502可根據參考電壓VREF來產生偏置電壓VB1及VB2，進而根據電容C1之耐受電壓，適當地控制上下限的準位。如此一來，若超出預期之過高或過低的感測電壓VSEN進入源極驅動裝置30時，鉗位電路324可將取樣保持電路322所接收的感測電壓VSEN限制在一預定範圍內，進而避免取樣保持電路322中的電容C1燒毀。
請參考第6圖，第6圖為一感測電路600及其鉗位電路的另一種詳細實現方式之示意圖。感測電路600之結構類似於感測電路320之結構，故功能相似的訊號及元件皆以相同符號表示。如第6圖所示，鉗位電路324包含有N型金氧半場效電晶體（NMOS transistor）MN1～MN4，其中每一電晶體皆採用二極體接法（diode-connected）進行連接，且每一N型金氧半場效電晶體MN1～MN4具有一臨界電壓Vthn。N型金氧半場效電晶體MN1～MN2連接於感測電路600之輸入端與參考端之間，在感測電壓VSEN傾向於上升的情況下，N型金氧半場效電晶體MN1～MN2可鉗位感測電壓VSEN使其小於參考電壓VREF加上兩倍臨界電壓2×Vthn（即MN1之臨界電壓Vthn和MN2之臨界電壓Vthn的總和）的準位。N型金氧半場效電晶體MN3～MN4連接於感測電路600之輸入端與參考端之間，在感測電壓VSEN傾向於下降的情況下，N型金氧半場效電晶體MN3～MN4可鉗位感測電壓VSEN使其大於參考電壓VREF減去兩倍臨界電壓2×Vthn（即MN3之臨界電壓Vthn和MN4之臨界電壓Vthn的總和）的準位。需注意的是，鉗位感測電壓VSEN的上下限是根據串聯的電晶體數量來決定，因此，可調整電晶體的數量以產生所需的上下限準位。舉例來說，亦可採用三個或更多個電晶體串聯於輸入端及參考端之間，以提高感測電壓VSEN的可接收範圍。
第7圖繪示一感測電路700及其鉗位電路324的另一種詳細實現方式。感測電路700之結構類似於感測電路600之結構，故功能相似的訊號及元件皆以相同符號表示。感測電路700與感測電路600的主要差異在於，感測電路700中的鉗位電路324是由4個P型金氧半場效電晶體MP1～MP4來實現。相似於前述段落關於N型金氧半場效電晶體的運作方式，P型金氧半場效電晶體MP1～MP4亦可用來實現相同的鉗位功能，在此不贅述。在另一實施例中，本發明之鉗位電路亦可藉由N型金氧半場效電晶體及P型金氧半場效電晶體的組合來實現。
請參考第8圖，第8圖為一感測電路800及其鉗位電路324的另一種詳細實現方式之示意圖。感測電路800之結構類似於感測電路320之結構，故功能相似的訊號及元件皆以相同符號表示。如第8圖所示，鉗位電路324包含有一N型金氧半場效電晶體MN0及一P型金氧半場效電晶體MP0，其可分別接收偏置電壓VB1～VB4。偏置電壓VB1～VB4可用來決定感測電壓VSEN鉗位的上限和下限。感測電路800另包含一參考電壓產生器802，用來根據參考電壓VREF產生偏置電壓VB1～VB4。在控制良好的偏置電壓VB1～VB4及參考電壓VREF之下，可適當地決定上限及下限的數值，以符合電容C1之耐受電壓。
值得注意的是，本發明之目的在於提供一種可用於有機發光二極體驅動裝置之感測電路，其可設置一鉗位電路來對感測電壓進行鉗位，使得取樣保持電路中電容所接收的電壓落在安全的範圍內，進而使有機發光二極體驅動裝置可採用低耐受電壓及小面積的電容。本領域具通常知識者當可據以進行修飾或變化，而不限於此。舉例來說，鉗位電路之結構可透過任何方式來實現，如第5～8圖所示的實施例以及其它可能的變化方式。由於鉗位電路可用來保護取樣保持電路中的電容以避免其燒毀，鉗位電路可設置在電容前端的任何位置。
請參考第9圖，第9圖為本發明實施例另一源極驅動裝置90之示意圖。源極驅動裝置90之結構類似於源極驅動裝置30之結構，故功能相似的訊號及元件皆以相同符號表示。如第9圖所示，源極驅動裝置90與源極驅動裝置30的主要差異在於，源極驅動裝置90之鉗位電路324耦接於取樣保持電路322的開關器SW1與電容C1之間。第9圖中的鉗位電路324亦可用來實現鉗位功能，並可透過前述各種電路結構來實現。
綜上所述，本發明提供了一種可用於有機發光二極體源極驅動裝置的感測電路，其可用來感測有機發光二極體面板中畫素單元的參數。感測電路包含有一鉗位電路，用來鉗位所接收的感測電壓，使得取樣保持電路中的電容接收到的電壓符合該電容的耐受電壓。因此，相較於習知有機發光二極體驅動裝置中的電容，本發明可採用具有較低耐受電壓的電容，其佔據的面積較小。因此，本發明可降低電路成本，同時鉗位電路可避免面板缺陷之下超出預期的過高或過低電壓造成電容燒毀。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
10、206:有機發光二極體面板 M1～M3:薄膜電晶體 L1:有機發光二極體 20:有機發光二極體控制系統 202:控制器 204、30、90:源極驅動裝置 210、310:驅動電路 220、320、500、600、700、800:感測電路 312:輸出驅動器 322:取樣保持電路 324:鉗位電路 326:類比數位轉換器 350:子畫素 SW1:開關器 C1:電容 VSEN:感測電壓 VA、VB:節點 VREF:參考電壓 VDD:電源供應電壓 GND:接地電壓 V1、V2:電壓 ∆V:電位差 D1、D2:二極體 VB1～VB4:偏置電壓 502、802:參考電壓產生器 Vth、Vthn、Vthp:臨界電壓 MN0～MN4:N型金氧半場效電晶體 MP0～MP4:P型金氧半場效電晶體
第1圖為常見的一有機發光二極體面板之結構示意圖。 第2圖為常見的一有機發光二極體控制系統之示意圖。 第3圖為本發明實施例一源極驅動裝置之示意圖。 第4圖為本發明實施例源極驅動裝置的操作電壓範圍之示意圖。 第5～8圖分別為一感測電路及其鉗位電路的一種詳細實現方式之示意圖。 第9圖為本發明實施例另一源極驅動裝置之示意圖。
30:源極驅動裝置
310:驅動電路
312:輸出驅動器
320:感測電路
322:取樣保持電路
324:鉗位電路
326:類比數位轉換器
350:子畫素
SW1:開關器
C1:電容
VSEN:感測電壓
VA、VB:節點
VREF:參考電壓

Claims (10)

  1. 一種感測電路，用於一有機發光二極體（Organic Light-Emitting Diode，OLED）驅動裝置，該感測電路包含有： 一取樣保持電路（sample and hold circuit），包含有一電容；以及 一鉗位電路，耦接於該取樣保持電路，用來鉗位該取樣保持電路所接收的一感測電壓，使該感測電壓符合該電容之一耐受電壓。
  2. 如請求項1所述之感測電路，其中該電容之一第一端接收該感測電壓，該電容之一第二端接收一參考電壓。
  3. 如請求項2所述之感測電路，其中該感測電壓被鉗位而使該感測電壓與該參考電壓之間的電位差位於該電容之該耐受電壓內。
  4. 如請求項1所述之感測電路，另包含有： 一類比數位轉換器（Analog to Digital Converter，ADC），耦接於該取樣保持電路，用來在該感測電壓被該取樣保持電路取樣之後，轉換該感測電壓。
  5. 如請求項1所述之感測電路，其中該鉗位電路包含有： 一二極體，用來鉗位該感測電壓使其小於一第一偏置電壓加上該二極體之一臨界電壓的數值，或用來鉗位該感測電壓使其大於一第二偏置電壓減去該二極體之該臨界電壓的數值。
  6. 如請求項5所述之感測電路，另包含有： 一參考電壓產生器，用來輸出一參考電壓至該電容，並根據該參考電壓產生該第一偏置電壓及該第二偏置電壓。
  7. 如請求項1所述之感測電路，其中該鉗位電路包含有： 至少一電晶體，耦接於該感測電路之一輸入端與一參考端之間，用來鉗位該感測電壓使其小於該參考端之一參考電壓加上該至少一電晶體之至少一臨界電壓的總和，或鉗位該感測電壓使其大於該參考端之該參考電壓減去該至少一電晶體之該至少一臨界電壓的總和。
  8. 如請求項7所述之感測電路，其中該至少一電晶體包含有至少一N型金氧半場效電晶體（NMOS transistor）或至少一P型金氧半場效電晶體（PMOS transistor）。
  9. 如請求項7所述之感測電路，其中該至少一電晶體包含有至少一二極體接法電晶體（diode-connected transistor）。
  10. 一種有機發光二極體（Organic Light-Emitting Diode，OLED）驅動裝置，包含有： 一驅動電路，用來傳送一驅動訊號至一有機發光二極體面板；以及 一感測電路，用來從該有機發光二極體面板接收對應於該驅動訊號之一感測電壓，該感測電路包含有： 一取樣保持電路（sample and hold circuit），包含有一電容；以及 一鉗位電路，耦接於該取樣保持電路，用來鉗位該感測電壓，使該感測電壓符合該電容之一耐受電壓。
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