CN111210768A - 有机发光二极管驱动装置的感测电路及其驱动装置 - Google Patents

有机发光二极管驱动装置的感测电路及其驱动装置 Download PDF

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CN111210768A
CN111210768A CN201910451614.4A CN201910451614A CN111210768A CN 111210768 A CN111210768 A CN 111210768A CN 201910451614 A CN201910451614 A CN 201910451614A CN 111210768 A CN111210768 A CN 111210768A
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voltage
sensing
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capacitor
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CN111210768B (zh
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程智修
曾柏瑜
梁可骏
黄如琳
周志宪
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Novatek Microelectronics Corp
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Abstract

本发明公开了一种感测电路，用于一有机发光二极管驱动装置，该感测电路包括一采样保持电路及一钳位电路。该采样保持电路包括一电容。该钳位电路耦接于该采样保持电路，可用来钳位该采样保持电路所接收的一感测电压，使该感测电压符合该电容的一耐受电压。

Description

有机发光二极管驱动装置的感测电路及其驱动装置
技术领域
本发明涉及一种可用于有机发光二极管(Organic Light-Emitting Diode，OLED)驱动装置的感测电路，尤其涉及一种可用来感测有机发光二极管面板上像素单元的参数的有机发光二极管驱动装置的感测电路。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)为发光二极管(Light-Emitting Diode，LED)的一种，其电致发光层是由有机化合物所构成，该有机化合物可因接收到电流而发光。有机发光二极管广泛应用于电子装置的显示设备，例如电视屏幕、计算机显示器、各类便携设备例如移动电话、手持式游戏主机及个人数字助理(Personal DigitalAssistant，PDA)等。其中，主动矩阵式有机发光二极管(Active Matrix OLED，AMOLED)为目前有机发光二极管显示面板的主流。主动矩阵式有机发光二极管可由薄膜晶体管(Thin-Film Transistor，TFT)来进行驱动，并包括存储电容用来维持像素的状态，以应用于大尺寸及高分辨率的显示器。
在一般有机发光二极管面板中，每一像素单元都包括三个子像素，其中每一子像素包括可产生三原色其中一者的有机发光二极管，用来组成欲显示在该像素单元上的颜色。子像素可从一驱动集成电路(Driver Integrated Circuit，Driver IC)接收一电压信号，接着，薄膜晶体管可将电压信号转换为一驱动电流，以驱动有机发光二极管发光。图1示出了常见的一有机发光二极管面板10的结构，其中，每一子像素包括三个薄膜晶体管M1～M3及一有机发光二极管L1。有机发光二极管L1发光的亮度可由其通过的驱动电流来决定，其中，驱动电流可由驱动薄膜晶体管M1进行转换并产生，薄膜晶体管M2及M3则作为转传信号的开关器。然而，在有机发光二极管面板10中，不同子像素中的驱动薄膜晶体管M1可能存在组件参数误差或不匹配的情况，导致电压/电流转换效率产生差异，此外，有机发光二极管L1的发光效率也可能存在误差。当有机发光二极管面板10经过一段长时间的运作之后，可能面临电压/电流转换及发光效率的衰减。在此情形下，有机发光二极管面板10上各个位置可能存在不同程度的衰减，使得有机发光二极管面板10的画面一致性降低。
为了改善有机发光二极管面板的画面一致性，源极驱动装置通常配备有一感测电路，用来感测各个参数(例如有机发光二极管的发光效率及/或薄膜晶体管的组件参数)的衰减程度。请参考图2，图2为常见的一有机发光二极管控制系统20的示意图。有机发光二极管控制系统20包括一控制器202、一源极驱动装置204及一有机发光二极管面板206。控制器202可实现为一系统单芯片(System on a Chip，SOC)，用来输出显示数据并执行用于有机发光二极管面板206的感测操作。源极驱动装置204包括一驱动电路210及一感测电路220，其感测方式为，驱动电路210传送一驱动信号至有机发光二极管面板206上的一目标子像素，感测电路220再从该子像素对应接收一感测电压。位于接收端的一模拟数字转换器(Analog to Digital Converter，ADC)可用来接收感测电压。为了降低噪声干扰，感测电路220还包括一电容阵列，而随着大尺寸面板的需求提升，有机发光二极管面板上子像素的数量也不断提升，因此，感测电路220需包括大量的电容以实现感测功能。大量的电容占据了庞大的电路面积，因而具有较高的电路成本。
考虑成本问题，电容可被设置为适用于子像素能够产生的小范围感测电压。举例来说，有机发光二极管面板可操作在电源供应电压VDDA(如18V)之下，有机发光二极管面板的正常感测操作中可产生3V～6V范围内的感测电压。因此，在正常操作之下，具有操作电压范围Δ3V的电容即足以使用，一般可将电容调整为可接收3V～6V之间的跨压。然而，面板的缺陷可能导致超出预期的感测电压被传送至感测电路，此超出预期的感测电压可能高达电源供应电压18V或低到接地电压0V，造成感测电路中的电容烧毁。因此，在现有源极驱动装置中，往往需设置具有高耐压的电容，其可接收的电压范围需从0V至18V，然而，耐压的增加使得电容面积也等比例的增加。
鉴于此，现有技术实有改进的必要。
发明内容
因此，本发明的主要目的即在于提供一种可用于有机发光二极管(OrganicLight-Emitting Diode，OLED)驱动装置的感测电路，感测电路中的电容可受到保护，以避免电容接收到超出预期的过高或过低的感测电压。
本发明公开了一种感测电路，用于一有机发光二极管驱动装置，该感测电路包括一采样保持电路(sample and hold circuit)及一钳位电路。该采样保持电路包括一电容。该钳位电路耦接于该采样保持电路，可用来钳位该采样保持电路所接收的一感测电压，使该感测电压符合该电容的一耐受电压。
本发明还公开了一种有机发光二极管驱动装置，该有机发光二极管驱动装置包括一驱动电路及一感测电路。该驱动电路可用来传送一驱动信号至一有机发光二极管面板。该感测电路可用来从该有机发光二极管面板接收对应于该驱动信号的一感测电压，该感测电路包括一采样保持电路及一钳位电路。该采样保持电路包括一电容。该钳位电路耦接于该采样保持电路，可用来钳位该感测电压，使该感测电压符合该电容的一耐受电压。
附图说明
图1为常见的一有机发光二极管面板的结构示意图。
图2为常见的一有机发光二极管控制系统的示意图。
图3为本发明实施例一源极驱动装置的示意图。
图4为本发明实施例源极驱动装置的操作电压范围的示意图。
图5～8分别为一感测电路及其钳位电路的一种详细实现方式的示意图。
图9为本发明实施例另一源极驱动装置的示意图。
其中，附图标记说明如下：
10、206 有机发光二极管面板
M1～M3 薄膜晶体管
L1 有机发光二极管
20 有机发光二极管控制系统
202 控制器
204、30、90 源极驱动装置
210、310 驱动电路
220、320、500、600、700、800 感测电路
312 输出驱动器
322 采样保持电路
324 钳位电路
326 模拟数字转换器
350 子像素
SW1 开关器
C1 电容
VSEN 感测电压
VA、VB 节点
VREF 参考电压
VDD 电源供应电压
GND 接地电压
V1、V2 电压
ΔV 电位差
D1、D2 二极管
VB1～VB4 偏置电压
502、802 参考电压产生器
Vth、Vthn、Vthp 临界电压
MN0～MN4 N型金氧半场效晶体管
MP0～MP4 P型金氧半场效晶体管
具体实施方式
图3为本发明实施例一源极驱动装置30的示意图。源极驱动装置30包括一驱动电路310及一感测电路320。图3还示出了有机发光二极管(Organic Light-Emitting Diode，OLED)面板的一子像素350，其未包括在源极驱动装置30中，但示出了于图3以方便说明。如图3所示，子像素350包括一有机发光二极管、三个晶体管(如薄膜晶体管(Thin-FilmTransistor，TFT))及一电容而构成的3T1C结构。本领域技术人员应了解，本发明可应用于具有任何结构的有机发光二极管面板，而图3的子像素结构仅为本发明众多实施方式当中的一种。
驱动电路310包括一输出驱动器312，可在显示期间内输出显示数据至子像素350。在感测期间内，驱动电路310可传送一驱动信号至子像素350的数据线。感测电路320可通过感测线从子像素350接收对应于该驱动信号的一感测电压VSEN。感测电路320包括一采样保持电路322、一钳位电路324及一模拟数字转换器(Analog to Digital Converter，ADC)326。采样保持电路322包括一开关器SW1及一电容C1。一般来说，感测电路320可感测并接收子像素350的节点VA上的电压。用来反映从子像素感测的参数的感测电压VSEN可通过钳位电路324，再由开关器SW1进行采样以传送至节点VB。当感测电压VSEN由采样保持电路322进行采样并保持在节点VB之后，模拟数字转换器326再接着将感测电压VSEN转换为相对应的数字数据。
电容C1可用来稳定节点VB上的感测电压VSEN。如上所述，现有的电容应具备较高的耐受电压，其可接收接地电压到电源供应电压之间的电压范围，以适用于例如面板缺陷等非正常情况，因而需布置大量的电路面积给现有电容。相较之下，本发明可使用耐受电压较低的电容，以降低电路面积，进而降低电路成本。如图3所示，钳位电路324可将感测电压VSEN钳位到预期从子像素350接收的一正常电压电平，此正常电压电平符合电容C1的耐受电压。换句话说，电容C1的耐受电压仅需要搭配较小范围的感测电压，可降低电容C1的面积。
详细来说，电容C1的一端耦接于一参考端，可用来接收一参考电压VREF；电容C1的另一端耦接于节点VB，可用来接收感测电压VSEN。钳位电路324可对感测电压VSEN进行钳位，使得从节点VB接收的感测电压VSEN与参考电压VREF之间的电位差位于电容C1的耐受电压内，此耐受电压为电容C1所能允许的最大跨压。在此例中，参考电压VREF可通过一参考端点(如源极驱动装置30的一输入焊盘)从外接电压源接收；而在另一实施例中，参考电压VREF也可由包括在源极驱动装置30内部的参考产生器产生。
请参考图4，图4为本发明实施例源极驱动装置30的操作电压范围的示意图。源极驱动装置30可接收一电源供应电压VDD及一接地电压GND以进行运作，其分别为源极驱动装置30的最大操作电压及最小操作电压。在正常情况下，从有机发光二极管面板接收的感测电压VSEN位于电压V1与V2之间的范围，因此，可将参考电压VREF设定于V1及V2之间，电容C1的耐受电压则设定为一电位差ΔV，此电位差ΔV等于或略大于参考电压VREF与电压V1之间的电位差，也等于或略大于参考电压VREF与电压V2之间的电位差。因此，在正常操作之下，电容C1所接收的感测电压VSEN位于参考电压VREF加减电位差ΔV的范围内，符合电容C1的耐受电压。
在非正常状况下，可能发生如缺陷点或缺陷线的面板缺陷，使得面板上发生缺陷的子像素输出超出预期的感测电压，此超出预期的感测电压可能高达电源供应电压VDD或低到接地电压GND。钳位电路324可避免超出预期的感测电压VSEN被电容C1接收。在一实施例中，钳位电路324可钳位感测电压VSEN使其低于参考电压VREF加上电位差ΔV的上限的数值，及/或钳位感测电压VSEN使其高于参考电压VREF减去电位差ΔV的下限的数值。如此一来，电容C1所接收的感测电压VSEN可被限制在预设的范围内，可避免电容C1的跨压超过其耐受电压而造成电容C1烧毁。
因此，由于钳位电路324的设置，电容C1所接收到的感测电压VSEN被限制在电容C1的正常操作范围内，使得电容C1可以是具有较低耐受电压的小面积电容。需注意的是，源极驱动装置30的感测电路320可能包括数百或数千个信道，每一信道都包括一采样保持电路搭配一电容，用来从有机发光二极管面板的一列子像素接收感测电压。因此，若每一信道都采用面积较小的电容，在源极驱动装置30的电路面积及成本上可达到大幅度的改善。
除此之外，感测电路320中的模拟数字转换器326仅需要支持符合电容C1的正常操作电压的电压范围或钳位电路324所限制的电压，其大幅小于源极驱动装置30的操作电压范围VDD～GND，使得模拟数字转换器326可采用较简单的设计，同时具有较低耗电。在一实施例中，可控制模拟数字转换器326及钳位电路324的设定以搭配各种应用，例如不同类型的有机发光二极管面板及/或不同的系统电压。模拟数字转换器326的操作范围可设定为符合有机发光二极管面板在正常状况下接收的感测电压VSEN，且电容C1的尺寸(对应于一特定耐受电压)以及钳位电路324的上下限都可对应进行调整。
本发明的钳位电路可通过任何方式实现。请参考图5，图5为一感测电路500及其钳位电路的一种详细实现方式的示意图。感测电路500的结构类似于感测电路320的结构，故功能相似的信号及组件都以相同符号表示。如图5所示，钳位电路324包括两个二极管D1及D2，分别用来接收偏置电压VB1及VB2。感测电路500还包括一参考电压产生器502，用来输出参考电压VREF至电容C1。参考电压产生器502还可用来产生偏置电压VB1及VB2，并分别将偏置电压VB1及VB2输出至二极管D1及D2。二极管D1及D2具有一临界电压Vth，因此，若所接收的感测电压VSEN倾向于上升时，感测电压VSEN会受到二极管D1的钳位而被限制在小于VB1加上Vth的电平，且若感测电压VSEN倾向于下降时，感测电压VSEN会受到二极管D2的钳位而被限制在大于VB2减去Vth的电平。参考电压产生器502可根据参考电压VREF来产生偏置电压VB1及VB2，进而根据电容C1的耐受电压，适当地控制上下限的电平。如此一来，若超出预期的过高或过低的感测电压VSEN进入源极驱动装置30时，钳位电路324可将采样保持电路322所接收的感测电压VSEN限制在一预定范围内，进而避免采样保持电路322中的电容C1烧毁。
请参考图6，图6为一感测电路600及其钳位电路的另一种详细实现方式的示意图。感测电路600的结构类似于感测电路320的结构，故功能相似的信号及组件都以相同符号表示。如图6所示，钳位电路324包括N型金氧半场效晶体管(NMOS transistor)MN1～MN4，其中每一晶体管都采用二极管接法(diode-connected)进行连接，且每一N型金氧半场效晶体管MN1～MN4具有一临界电压Vthn。N型金氧半场效晶体管MN1～MN2连接于感测电路600的输入端与参考端之间，在感测电压VSEN倾向于上升的情况下，N型金氧半场效晶体管MN1～MN2可钳位感测电压VSEN使其小于参考电压VREF加上两倍临界电压2×Vthn(即MN1的临界电压Vthn和MN2的临界电压Vthn的总和)的电平。N型金氧半场效晶体管MN3～MN4连接于感测电路600的输入端与参考端之间，在感测电压VSEN倾向于下降的情况下，N型金氧半场效晶体管MN3～MN4可钳位感测电压VSEN使其大于参考电压VREF减去两倍临界电压2×Vthn(即MN3的临界电压Vthn和MN4的临界电压Vthn的总和)的电平。需注意的是，钳位感测电压VSEN的上下限是根据串联的晶体管数量来决定，因此，可调整晶体管的数量以产生所需的上下限电平。举例来说，也可采用三个或更多个晶体管串联于输入端及参考端之间，以提高感测电压VSEN的可接收范围。
图7示出了一感测电路700及其钳位电路324的另一种详细实现方式。感测电路700的结构类似于感测电路600的结构，故功能相似的信号及组件都以相同符号表示。感测电路700与感测电路600的主要差异在于，感测电路700中的钳位电路324是由4个P型金氧半场效晶体管MP1～MP4来实现。类似于前述段落关于N型金氧半场效晶体管的运作方式，P型金氧半场效晶体管MP1～MP4也可用来实现相同的钳位功能，在此不赘述。在另一实施例中，本发明的钳位电路也可通过N型金氧半场效晶体管及P型金氧半场效晶体管的组合来实现。
请参考图8，图8为一感测电路800及其钳位电路324的另一种详细实现方式的示意图。感测电路800的结构类似于感测电路320的结构，故功能相似的信号及组件都以相同符号表示。如图8所示，钳位电路324包括一N型金氧半场效晶体管MN0及一P型金氧半场效晶体管MP0，其可分别接收偏置电压VB1～VB4。偏置电压VB1～VB4可用来决定感测电压VSEN钳位的上限和下限。感测电路800还包括一参考电压产生器802，用来根据参考电压VREF产生偏置电压VB1～VB4。在控制良好的偏置电压VB1～VB4及参考电压VREF之下，可适当地决定上限及下限的数值，以符合电容C1的耐受电压。
值得注意的是，本发明的目的在于提供一种可用于有机发光二极管驱动装置的感测电路，其可设置一钳位电路来对感测电压进行钳位，使得采样保持电路中电容所接收的电压落在安全的范围内，进而使有机发光二极管驱动装置可采用低耐受电压及小面积的电容。本领域技术人员可据此进行修饰或变化，而不限于此。举例来说，钳位电路的结构可通过任何方式来实现，如图5～8所示的实施例以及其它可能的变化方式。由于钳位电路可用来保护采样保持电路中的电容以避免其烧毁，钳位电路可设置于电容前端的任何位置。
请参考图9，图9为本发明实施例另一源极驱动装置90的示意图。源极驱动装置90的结构类似于源极驱动装置30的结构，故功能相似的信号及组件都以相同符号表示。如图9所示，源极驱动装置90与源极驱动装置30的主要差异在于，源极驱动装置90的钳位电路324耦接于采样保持电路322的开关器SW1与电容C1之间。图9中的钳位电路324也可用来实现钳位功能，并可通过前述各种电路结构来实现。
综上所述，本发明提供了一种可用于有机发光二极管源极驱动装置的感测电路，其可用来感测有机发光二极管面板中像素单元的参数。感测电路包括一钳位电路，用来钳位所接收的感测电压，使得采样保持电路中的电容接收到的电压符合该电容的耐受电压。因此，相较于现有有机发光二极管驱动装置中的电容，本发明可采用具有较低耐受电压的电容，其占据的面积较小。因此，本发明可降低电路成本，同时钳位电路可避免面板缺陷之下超出预期的过高或过低电压造成电容烧毁。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种感测电路，用于一有机发光二极管驱动装置，该感测电路包括：
一采样保持电路，包括一电容；以及
一钳位电路，耦接于该采样保持电路，用来钳位该采样保持电路所接收的一感测电压，使该感测电压符合该电容的一耐受电压。
2.如权利要求1所述的感测电路，其特征在于，该电容的一第一端接收该感测电压，该电容的一第二端接收一参考电压。
3.如权利要求2所述的感测电路，其特征在于，该感测电压被钳位而使该感测电压与该参考电压之间的电位差位于该电容的该耐受电压内。
4.如权利要求1所述的感测电路，其特征在于，还包括：
一模拟数字转换器，耦接于该采样保持电路，用来在该感测电压被该采样保持电路采样之后，转换该感测电压。
5.如权利要求1所述的感测电路，其特征在于，该钳位电路包括：
一二极管，用来钳位该感测电压使其小于一第一偏置电压加上该二极管的一临界电压的数值，或用来钳位该感测电压使其大于一第二偏置电压减去该二极管的该临界电压的数值。
6.如权利要求5所述的感测电路，其特征在于，还包括：
一参考电压产生器，用来输出一参考电压至该电容，并根据该参考电压产生该第一偏置电压及该第二偏置电压。
7.如权利要求1所述的感测电路，其特征在于，该钳位电路包括：
至少一晶体管，耦接于该感测电路的一输入端与一参考端之间，用来钳位该感测电压使其小于该参考端的一参考电压加上该至少一晶体管的至少一临界电压的总和，或钳位该感测电压使其大于该参考端的该参考电压减去该至少一晶体管的该至少一临界电压的总和。
8.如权利要求7所述的感测电路，其特征在于，该至少一晶体管包括至少一N型金氧半场效晶体管或至少一P型金氧半场效晶体管。
9.如权利要求7所述的感测电路，其特征在于，该至少一晶体管包括至少一二极管接法晶体管。
10.一种有机发光二极管驱动装置，包括：
一驱动电路，用来传送一驱动信号至一有机发光二极管面板；以及
一感测电路，用来从该有机发光二极管面板接收对应于该驱动信号的一感测电压，该感测电路包括：
一采样保持电路，包括一电容；以及
一钳位电路，耦接于该采样保持电路，用来钳位该感测电压，使该感测电压符合该电容的一耐受电压。
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